WO2021103904A1 - 一种微透镜阵列制备方法 - Google Patents

一种微透镜阵列制备方法 Download PDF

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WO2021103904A1
WO2021103904A1 PCT/CN2020/124299 CN2020124299W WO2021103904A1 WO 2021103904 A1 WO2021103904 A1 WO 2021103904A1 CN 2020124299 W CN2020124299 W CN 2020124299W WO 2021103904 A1 WO2021103904 A1 WO 2021103904A1
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photoresist
microlens array
digital mask
substrate
direct writing
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PCT/CN2020/124299
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English (en)
French (fr)
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邵仁锦
浦东林
朱鹏飞
张瑾
陈林森
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苏州苏大维格科技集团股份有限公司
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Publication of WO2021103904A1 publication Critical patent/WO2021103904A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding

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  • the invention relates to a method for preparing a microlens array, belonging to the technical field of micro-optical devices and semiconductor element micro-nano processing.
  • Micro lens array refers to a micro structure array formed by a series of micro lens units with apertures ranging from millimeters to micro nanometers. It can perform convergence, divergence, collimation, imaging and transmission in the optical path. It can form many new optical systems and realize new functions such as micro, array, integration, imaging and wavefront conversion that are difficult to achieve by traditional optical components. It is widely used in light shaping, optical communication, optical sensing, flat panel display, and 3D imaging. , Automotive lighting and photoelectric detection.
  • the photoresist hot melt method has become the most commonly used processing method due to its advantages of simple process, low cost, high efficiency, and short cycle.
  • the traditional photoresist hot-melt method has problems such as poor controllability of the curvature and topography of the microlens, the need to prepare a physical mask, and the low success rate of preparing the microlens.
  • it is necessary to develop a new type of microlens array preparation method which can not only solve the technical defects and shortcomings in the traditional photoresist hot-melt method, but also further expand the photoresist hot-melt method to prepare microlens arrays, etc.
  • the technical advantages and application fields of micro-optical devices are the technical advantages and application fields of micro-optical devices.
  • the purpose of the present invention is to provide a method using digital mask laser direct writing lithography technology and photoresist hot melt method to prepare a microlens array.
  • the microlens array prepared by the present invention has a high success rate and a microlens
  • the surface has strong controllability and does not need to prepare a physical mask.
  • a method for preparing a microlens array the method steps are as follows:
  • step S2 sequentially post-baking, developing, and drying the N-step cylindrical photoresist array obtained in the step S1;
  • step S3 The N-step cylindrical photoresist array obtained in step S2 is hot-melted to reach a glass transition temperature or higher, the N-step cylindrical photoresist is gradually melted, and the N-step cylindrical photoresist is gradually melted. Under the action of surface tension, it gradually loses balance, begins to deform and shrinks to the middle, until a spherical crown shape is formed, when the surface tension reaches equilibrium again, and the microlens array is obtained after cooling.
  • the microlens array obtained in the step S3 includes a plurality of microlenses, and the outer contour of each microlens is arc-shaped or composed of more than two arc-shaped segments with different curvatures.
  • microlens array is a centrally symmetrical microlens array or a centrally asymmetrical microlens array.
  • the aperture of the microlens is controlled by the number of steps of the N-step cylindrical photoresist, the diameter of each step, the height of each step, and the hot melting temperature and the hot melting time.
  • the method for manufacturing the microlens array further includes establishing the direct-write lithography program
  • the method for establishing the direct-write lithography program includes: determining the number of steps N, and designing the required N sets of digital mask layout files; Set an alignment mark at the corresponding position at the lower left corner of each set of the digital mask layout file; cut the obtained digital mask layout file with data strips at equal intervals to obtain a data file; import the data file into lithography
  • the control system sets the exposure dose of each set of the digital mask layout file to establish a direct writing lithography program.
  • the direct writing lithography program starts with the alignment mark, and sequentially performs direct writing lithography in the sequence of data strips. After the lithography of the first set of the digital mask layout file is completed, it automatically moves to the next set.
  • the alignment mark of the digital mask layout file is used as a starting point for direct writing photolithography.
  • each set of the digital mask layout file has several identical patterns, and each set of the digital mask layout file is designed to include the diameter of the pattern, and the exposure dose controls the cylindrical light of the corresponding direct writing lithography step. The height of the resist.
  • the center lines of the patterns overlap or the center lines of at least part of the patterns are offset.
  • the preparation method of the substrate coated with photoresist is as follows: a clean substrate is obtained by cleaning and then drying, a tackifier is baked on the clean substrate, and the photoresist is applied to the substrate. The photoresist is soft-baked to remove part of the solvent.
  • the photoresist coating method is one of spin coating, knife coating and spray coating.
  • the beneficial effect of the present invention is that the preparation method of the microlens array provided by the present invention adopts the processing technology of the digital mask laser direct writing lithography method and the photoresist hot melt method, without the need to prepare a physical mask, and it can be controlled by increasing The number of parameters is used to improve the controllability of the obtained microlens surface, and the microlens array can be prepared.
  • This method has simple process, high processing efficiency, high preparation success rate, lower processing cost, more flexible design and controllability of the microlens surface Strong.
  • Figure 1 is a schematic diagram of a single-step column photoresist array structure
  • Fig. 2 is a schematic diagram of the structure of a symmetrical microlens array
  • Fig. 3 is a schematic diagram of the structure of a microlens array with a collapsed center
  • FIG. 4 is a schematic diagram of the structure of a two-step column photoresist array
  • Figure 5 is a schematic diagram of the center-biased four-step column photoresist array structure
  • Figure 6 is a schematic diagram of a microlens array with asymmetric center
  • FIG. 7 is a schematic diagram of the structure of three sets of digital mask layout files in the first embodiment of the present invention.
  • FIG. 8 is a schematic diagram of overlapping three sets of digital mask layout files in FIG. 7; FIG.
  • FIG. 9 is a schematic diagram of data strips for cutting of the 11 digital mask layout file in FIG. 7;
  • FIG. 10 is a picture of the three-step cylindrical photoresist array in the first embodiment of the present invention after development and drying;
  • Fig. 11 is a picture of a symmetrical microlens array in the first embodiment of the present invention.
  • FIG. 12 is a schematic diagram of four sets of digital mask layout files overlapping in the second embodiment of the present invention.
  • 13 is a picture of the three-step cylindrical photoresist array in the second embodiment of the present invention after development and drying;
  • Fig. 14 is a picture of a microlens array in the second embodiment of the present invention.
  • the novel microlens array preparation method proposed by the present invention utilizes a combination of a digital mask laser direct writing lithography method and a photoresist hot melt method. Specifically, first, a substrate coated with photoresist is provided. A preset direct writing lithography program is called on the substrate to perform digital mask laser direct writing lithography to prepare an N-step pillar photoresist array; secondly, the obtained N-step pillar photolithography The photoresist array is post-baked, developed, and dried in sequence; finally, the N-step column photoresist array is hot-melted until it reaches a glass transition temperature or higher. The N-step column photoresist gradually melts, and the N-step column photoresist gradually melts.
  • the cylindrical photoresist gradually loses its balance under the action of surface tension, begins to deform and shrinks in the middle, until a spherical crown shape is formed, when the surface tension reaches equilibrium again, and a microlens array is obtained after cooling.
  • the traditional photoresist hot-melt method to prepare microlens arrays mainly uses mask exposure to obtain a single-step cylindrical photoresist array.
  • the single-step cylindrical photoresist array on the substrate 20 is heated and melted, and naturally under the action of surface tension A microlens array with a spherical crown is formed.
  • the diameter d and height h of a single column photoresist 31 are expressed as
  • F1, F2, and F3 respectively represent the surface tension between the cylindrical photoresist 31 and the air, the surface tension between the substrate 20 and the air, and the surface tension between the substrate 20 and the cylindrical photoresist 31.
  • the single The stepped pillar photoresist 31 is in a balanced state.
  • the surface tension of the cylindrical photoresist 31 gradually loses balance, begins to deform and shrinks to the middle, until a centrally symmetric spherical crown shape is formed, when the surface tension reaches equilibrium again
  • a microlens 10 with a fixed contact angle ⁇ is formed, as shown in Fig. 2.
  • the diameter of the microlens is D
  • the height H
  • the volume is expressed as
  • the aspect ratio of the single-step cylindrical photoresist 31 is less than 0.07, that is, when the diameter of the single-step cylindrical photoresist 31 is relatively large relative to the height of the photoresist, the single-step cylindrical photoresist 31 forms a microlens after melting and shrinking At 10 o'clock, the center will collapse, as shown in Figure 3.
  • FIG. 4 heating and melting the symmetrical two-step cylindrical photoresist array, under the action of surface tension, a spherical capillary microlens array is naturally formed.
  • FIG. 1 for the two-step column photoresist array symmetrical on the center of the substrate 20, the first step diameter d1, the height h1, and the second step diameter d2 of the two-step column photoresist 32 before the thermal fusion , Height h2, its volume is expressed as
  • F4, F5, and F6 respectively represent the surface tension between the first stepped column photoresist and air, the surface tension between the substrate 20 and the air, and the surface tension between the first stepped column photoresist and the substrate 20,
  • F7, F8 and F9 respectively represent the surface tension between the second stepped column photoresist and air, the surface tension between the first stepped column photoresist and air, the second stepped column photoresist and the first stepped column The surface tension between the bulk photoresist.
  • the two-step column photoresist is in a balanced state under the action of the comprehensive surface tension.
  • the column photoresist of each step has a diameter d, a height h, the surface tension between the column photoresist of the step and the air, and the column photoresist of the step
  • the number of volume controllable parameters is N*2
  • the number of surface tension controllable parameters is N*3.
  • the surface control of the microlens is more flexible.
  • the number of surface tension controllable parameters increases exponentially, thereby reducing the occurrence of collapse. The probability increases the success rate of microlens preparation.
  • the method for preparing the microlens array proposed in the present invention by designing the photoresist distribution of the N-step pillars, and combining the incomplete hot-melt method, different types of microlens arrays can be obtained.
  • the four-step cylindrical photoresist 33 is centered on the substrate 20, combined with the incomplete melting method, that is, by strictly controlling the melting temperature and time length, a centrally asymmetric, tilted microlens array can be obtained ,
  • the inclined microlens 30 is shown in FIG. 6.
  • the preparation method does not need to prepare a physical mask, but only needs to design a required digital mask layout file according to requirements, process it to obtain a data file, and input the data file into a photolithography control system, thereby reducing the processing cost.
  • the aperture of the microlens is controlled by the number of steps of the N-step cylindrical photoresist, the diameter of each step, the height of each step, and the hot melting temperature and the hot melting time.
  • the distribution form and diameter of the steps can be controlled by the flexible design and optimization of N sets of digital mask layout files, and the height of the column photoresist of the corresponding step can be controlled by modulating the exposure dose of each step, thus avoiding the column.
  • a centrosymmetric microlens array is prepared by the method of the present invention.
  • the microlens of the microlens array has a diameter of 30.2um and a height of 5.4um.
  • the specific preparation steps are as follows:
  • Step 1 Establish a direct writing lithography program: As shown in Figure 7, three sets of digital mask layout files 11, 12 and 13 are designed, each of which has several identical patterns, and several patterns are equally spaced. Arranged symmetrically. Specifically, 11 digital mask layout files have a pattern 111; 12 digital mask layout files have a pattern 121; 13 digital mask layout files have a pattern 131. The diameters of the patterns on the three sets of the digital mask layout files are different. In this embodiment, the diameter of the pattern 111 is 30um; the diameter of the pattern 121 is 20um; the diameter of the pattern 131 is 10um. Referring to FIG.
  • the center lines of the patterns described overlap that is, the center lines of the pattern 111, the pattern 121, and the pattern 131 at the corresponding positions overlap.
  • An alignment cross is set at the corresponding position in the lower left corner of each set of digital mask layout files to ensure that the starting point of direct writing lithography of each set of digital mask layout files is at the corresponding position during digital mask laser direct writing lithography
  • 11 digital mask layout files are provided with an alignment cross 112
  • 12 digital mask layout files and 13 digital mask layout files are provided with alignment crosses (not shown) in corresponding positions, and three sets of digital masks After the template image files are overlapped, the three alignment crosses are overlapped at the alignment cross 112.
  • the three sets of digital mask layout files are cut into data strips at equal intervals to obtain the data files, and the data files are obtained. Import the data file into the lithography control system and set the exposure dose to establish a direct writing lithography program, where the exposure dose includes the illuminance Ev and the time t, and the height of each step column photoresist is controlled by the exposure dose .
  • the digital mask laser direct writing lithography system used in the present invention uniformly takes the lower left corner of the layout as the starting point of lithography, and sequentially performs direct writing lithography in the order of data strips.
  • take the 11 digital mask layout file as an example.
  • the 11 digital mask layout file is cut at equal intervals to obtain n data strips. Taking 5 data strips as an example, they are arranged in order from left to right.
  • a data stripe 113, a data stripe 114, a data stripe 115, a data stripe 116, and a data stripe 117 are arranged, wherein the alignment cross mark 112 is arranged in the data stripe 113.
  • the data strip 113 is first subjected to direct writing lithography from bottom to top, and then the data strip 114 to the data strip 117 are sequentially transferred from the data strip 114 to the data strip 117 in the order of the data strips.
  • Perform direct write lithography When there are multiple sets of digital mask layout files for direct writing lithography, when the first digital mask layout file lithography is completed, the lithography platform system automatically moves to the second digital mask layout file lithography starting point for direct writing After finishing the photolithography, move to the next starting point of the layout photolithography for direct writing photolithography.
  • Step 2 Prepare a substrate coated with photoresist: first provide a clean substrate (not shown), and bake a tackifier on the clean substrate.
  • the tackifier is hexamethyldisilamine (HMDS), Its purpose is to increase the viscosity of the substrate to the photoresist.
  • the substrate is a 4-inch round silicon wafer or glass wafer, and the provided clean substrate is obtained by cleaning and then drying.
  • the spin coating method to uniformly coat the AZ4620 type photoresist on the substrate, the viscosity of the photoresist is 400mpa, the spin coating speed is 4500rpm, and the time is 30s.
  • the soft bake temperature is 100° C. and the time is 3 minutes.
  • the processed photoresist substrate is inspected and the thickness of the spin-coated photoresist is 6um.
  • a blade coating or spray coating method can be selected for photoresist coating.
  • Step 3 Digital mask laser direct writing lithography: use a vacuum adsorption system to fix the photoresist substrate in the central area of the lithography platform, select a suitable area on the photoresist surface, and call the established direct writing lithography program to correct It performs digital mask laser direct writing lithography. Specifically, starting with the alignment cross 111 of the digital mask layout file 11 as the starting point of lithography, the direct writing lithography is performed in sequence in the order of the data strips. When the lithography of the digital mask layout file 11 is completed, the lithography platform system Automatically move to the alignment cross mark of the digital mask layout file 12 as the starting point of lithography for direct writing lithography.
  • Step 4 Post-baking, developing, and drying: Put the three-step cylindrical photoresist array obtained in step S3 on a hot plate for post-baking to eliminate the standing wave effect. Specifically, the post-baking temperature is 100°C, time is 1 minute. After the three-step cylindrical photoresist array is cooled, development is performed. The development uses a 0.8% NaOH alkaline solution as the development solution, and the development time is 60s-120s. Finally, drying is performed, and the drying method is to use clean nitrogen to blow dry the surface of the substrate. The obtained three-step column photoresist array is inspected by a microscope. As shown in FIG. 10, the bottom surface of the three-step column has a diameter of 30.1um and a total height of 5.5um.
  • Step 5 Photoresist hot melt: the three-step cylindrical photoresist array obtained in step S4 is completely hot melted, and placed on a hot plate for high-temperature heating at a temperature of 145°C and heating time For 20 minutes, the three-step cylindrical photoresist array reaches above the glass transition temperature, the three-step cylindrical photoresist gradually melts, and the three-step cylindrical photoresist gradually loses balance under the action of surface tension and begins to deform And shrink to the center until a spherical crown shape is formed, at which time the surface tension reaches equilibrium again, and the microlens array is obtained after cooling.
  • the microlens array obtained is inspected by a microscope.
  • the microlens array includes several microlenses.
  • the outer contour of each microlens is arc-shaped, as shown in FIG. 11, the aperture of the microlens is 30.2um, and the height is 30.2um. 5.4um.
  • a central asymmetric microlens array is prepared by the method of the present invention.
  • the microlenses of the central asymmetric microlens array have a diameter of 31.1um and a height of 7.37um.
  • the specific preparation steps are for:
  • Step 1 Establish a direct-write lithography program: Four sets of digital mask layout files are designed. The method is the same as that of the first embodiment, which will not be repeated here.
  • the pattern 211 on the first digital mask layout file 21 The diameter of is 30um; the diameter of the pattern 221 on the second digital mask layout file (not shown) is 25um; the diameter of the pattern 231 on the third digital mask layout file (not shown) is 20um; the fourth number The diameter of the pattern 241 on the mask layout file (not shown) is 15um.
  • the center lines of the corresponding patterns are offset and a point on the edge of the corresponding patterns overlaps.
  • the corresponding pattern may be set to be at least partially offset from the center line.
  • An alignment cross mark is set at the corresponding position at the lower left corner of each set of the digital mask layout file.
  • the four alignment cross marks are overlapped at the position of the alignment cross mark 212 to ensure In the digital mask laser direct writing lithography, the starting point of the direct writing lithography of each set of digital mask layout files is at the corresponding position. Cut four sets of digital mask layout files according to the method of the first embodiment to cut data strips at equal intervals to obtain data files.
  • the exposure dose includes the illuminance Ev and the time t, and the height of each step column photoresist is controlled by the exposure dose .
  • Step 2 Prepare the substrate coated with photoresist: the preparation method is the same as that of the first embodiment, which will not be repeated here.
  • the processed photoresist substrate is inspected to obtain the thickness of the spin-coated photoresist as 8um. .
  • Step 3 Digital mask laser direct writing lithography: the direct writing lithography method is the same as that of the first embodiment, which will not be repeated here, and a four-step cylindrical photoresist array with asymmetric center is prepared.
  • Step 4 Post-baking, developing, and drying: the four-stage cylindrical photoresist array obtained in the step S3 is subjected to post-baking, developing and drying treatments using the method shown in the first embodiment, and the obtained The four-step column photoresist array was examined by a microscope. As shown in FIG. 13, the diameter of the four-step column was 30.08um and the total height was 7.89um.
  • Photoresist hot melt the four-step column photoresist array obtained in step S4 is subjected to incomplete hot melt treatment, and placed on a hot plate for high-temperature heating at a temperature of 130°C.
  • the time is 90 seconds, the four-step cylindrical photoresist array reaches above the glass transition temperature, the four-step cylindrical photoresist gradually melts, the four-step cylindrical photoresist gradually loses balance under the action of surface tension, and begins It deforms and shrinks to the center until a spherical crown shape is formed, at which time the surface tension reaches equilibrium again, and the microlens array is obtained after cooling.
  • the microlens array obtained is inspected by a microscope.
  • the microlens array includes several microlenses.
  • the outer contour of each microlens is composed of more than two arc-shaped segments with different curvatures. As shown in FIG. 14, the microlens The caliber is 31.1um and the height is 7.37um.
  • the preparation method of the microlens array provided by the present invention adopts the processing technology of the digital mask laser direct writing lithography method and the photoresist hot-melt method, without the need to prepare a physical mask, and it is improved by increasing the number of controllable parameters.
  • a microlens array can be prepared.
  • the method has simple process, high processing efficiency, high preparation success rate, lower processing cost, more flexible design and strong controllability of the microlens surface.

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Abstract

一种微透镜阵列制备方法，其包括以下步骤：S1、提供已涂布有光刻胶的基板（20），在基板（20）上调用预置的直写光刻程序以对其进行数字掩模激光直写光刻，以制备获得N台阶柱体光刻胶（31，32，33）阵列；S2、将步骤S1得到的N台阶柱体光刻胶（31，32，33）阵列依次进行后烘、显影、烘干；S3、将步骤S2得到的N台阶柱体光刻胶（31，32，33）阵列进行热熔，制备获得微透镜（10，30）阵列。制备方法采用数字掩模激光直写光刻方法和光刻胶热熔法相结合的加工技术，无需制备实体掩模版，通过增多可控参量数目来提高对得到的微透镜表面可控性，可制备微透镜阵列，方法工艺简单、加工效率高、制备成功率高、加工成本更低、设计更加灵活以及对微透镜表面可控性强。

Description

一种微透镜阵列制备方法
本申请要求了申请日为2019年11月27日，申请号为201911181581.2的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及一种微透镜阵列的制备方法，属于微光学器件、半导体元件微纳加工技术领域。
背景技术
微透镜阵列是指由一系列孔径在毫米量级到微纳米量级的微型透镜单元按一定方式排列而成的微结构阵列，其在光路中可以发挥出汇聚、发散、准直、成像和传输等作用，能构成许多新型的光学系统，实现传统光学元件难以实现的微小、阵列、集成、成像和波面转换等新功能，广泛应用于光整形、光通讯、光传感、平板显示、3D成像、汽车照明和光电探测等领域。
目前，在众多加工制备微透镜阵列的方法中，光刻胶热熔法以其工艺简单、成本低、效率高、周期短等优点成为最常用的一种加工方法。但是传统光刻胶热熔法存在微透镜的曲率和形貌可控性较差、需要制备实体掩模板、以及制备微透镜的成功率低等问题。对此，有必要出一种新型的微透镜阵列制备方法，不仅可以解决传统光刻胶热熔法中存在的技术缺陷和不足，还可以进一步地扩大光刻胶热熔法制备微透镜阵列等微光学器件的技术优势和应用领域。
发明内容
本发明的目的在于提供一种利用数字掩模激光直写光刻技术和光刻胶热熔法相结合的方法，以制备获得微透镜阵列，本发明制备得到的微透镜阵列成功率高、微透镜表面可控性强以及不需要制备实体掩模板。
为达到上述目的，本发明提供如下技术方案：一种微透镜阵列制备方法，其方法步骤如下：
S1、提供已涂布有光刻胶的基板，在所述基板上调用预置的直写光刻程序以对其进行数字掩模激光直写光刻，以制备获得N台阶柱体光刻胶阵列；
S2、将所述步骤S1得到的所述N台阶柱体光刻胶阵列依次进行后烘、显影、烘干；
S3、将所述步骤S2得到的所述N台阶柱体光刻胶阵列进行热熔，达到玻璃化温度以上，所述N台阶柱体光刻胶逐渐熔融，所述N台阶柱体光刻胶在表面张力作用下逐渐失去平衡，开始变形并向中间收缩，直到形成球冠状形貌，时表面张力再次达到平衡，冷却后获得微透镜阵列。
进一步地，所述步骤S3得到的所述微透镜阵列包括若干个微透镜，每个所述微透镜的外轮廓呈弧形或者由两段以上不同曲率的弧形段组成。
进一步地，所述微透镜阵列为中心对称微透镜阵列或中心不对称微透镜阵列。
进一步地，所述微透镜的孔径由所述N台阶柱体光刻胶的台阶数、各台阶直径、各台阶高度、以及所述热熔温度和所述热熔时间控制。
进一步地，所述微透镜阵列制备方法还包括建立所述直写光刻程序，所述直写光刻程序的建立方法包括：确定台阶数N，设计所需的N套数字掩模版图文件；在每套所述数字掩模版图文件左下角的相应位置上设置对准标；将得到的所述数字掩模版图文件进行数据条带等间距切割得到数据文件；将所述数据文件导入光刻控制系统，设定每套所述数字掩模版图文件的曝光剂量，以建立直写光刻程序。
进一步地，所述直写光刻程序以对准标为起点，按数据条带顺序依次进行直写光刻，第一套所述数字掩模版图文件光刻完成后，自动移动到下一套所述数字掩模版图文件的对准标为起点进行直写光刻。
进一步地，每套所述数字掩模版图文件具有若干相同的图样，设计每套所述数字掩模版图文件包括所述图样的直径，所述曝光剂量控制相应直写光刻台阶的柱体光刻胶的高度。
进一步地，所述N套数字掩模版图文件重叠后其所述图样的中心线重叠或者至少部分图样的中心线偏置。
进一步地，所述涂布有光刻胶的基板的制备方法如下：采用先清洗后烘干的方式获得干净的基板，在所述干净的基板上烘增粘剂，涂布光刻胶，对光刻胶软烘去除部分溶剂。
进一步地，所述涂布光刻胶方法为旋涂、刮涂和喷涂中的一种。
本发明的有益效果在于：本发明所提供的微透镜阵列的制备方法采用数字掩模激光直写光刻方法和光刻胶热熔法相结合的加工技术，无需制备实体掩模版，通过增多可控参量数目来提高对得到的微透镜表面可控性，可制备微透镜阵列，该方法工艺简单、加工效率高、制备成功率高、加工成本更低、设计更加灵活以及对微透镜表面可控性强。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，并可依照说明书的内容予以实施，以下以本发明的较佳实施例并配合附图详细说明如后。
附图说明
图1为单台阶柱体光刻胶阵列结构示意图；
图2为中心对称的微透镜阵列结构示意图；
图3为中心塌陷的微透镜阵列结构示意图；
图4为二台阶柱体光刻胶阵列结构示意图；
图5为中心偏置的四台阶柱体光刻胶阵列结构示意图
图6为中心不对称的微透镜阵列结构示意图；
图7为本发明第一实施例中三套数字掩模版图文件结构示意图；
图8为图7中的三套数字掩模版图文件重叠的示意图；
图9为图7中的11数字掩模版图文件的切割的数据条带示意图；
图10为本发明第一实施例中三台阶柱体光刻胶阵列经过显影和烘干的图片；
图11为本发明第一实施例中中心对称的微透镜阵列的图片；
图12为本发明第二实施例中四套数字掩模版图文件重叠的示意图；
图13为本发明第二实施例中三台阶柱体光刻胶阵列经过显影和烘干的图片；
图14为本发明第二实施例中微透镜阵列的图片。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要说明的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的机构或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
此外，下面所描述的本发明不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
本发明所提出的新型的微透镜阵列制备方法利用数字掩模激光直写光刻方法和光刻胶热熔法相结合的加工技术，具体的，首先提供已涂布有光刻胶的基板，在所述基板上调用预置的直写光刻程序以对其进行数字掩模激光直写光刻，以制备获得N台阶柱体光刻胶阵列；其次将得到的所述N台阶柱体光刻胶阵列依次进行后烘、显影、烘干；最后将所述N台阶柱体光刻胶阵列进行热熔，达到玻璃化温度以上，所述N台阶柱体光刻胶逐渐熔融，所述N台阶柱体光刻胶在表面张力作用下逐渐失去平衡，开始变形并向中间收缩，直到形成球冠状形貌，时表面张力再次达到平衡，冷却后获得微透镜阵列。
传统光刻胶热熔法制备微透镜阵列主要是使用掩模板曝光获得单台阶柱体 光刻胶阵列，对在基板20上的单台阶柱体光刻胶阵列加热熔融，在表面张力作用下自然形成球冠状的微透镜阵列。请参见图1，对单台阶柱体光刻胶阵列热熔前，单个柱体光刻胶31的直径d，高度h，其体积大小表示为
Figure PCTCN2020124299-appb-000001
F1、F2、F3分别表示柱体光刻胶31与空气之间的表面张力、基板20与空气之间的表面张力、基板20与柱体光刻胶31之间的表面张力，此时，单台阶柱体光刻胶31处于平衡状态。对单台阶柱体光刻胶阵列热熔后，柱体光刻胶31表面张力作用逐渐失去平衡，开始变形并向中间收缩，直到形成中心对称的球冠状形貌，当表面张力作用再次达到平衡时，球冠形貌不再变化，形成具有固定接触角为θ的微透镜10，如图2所示，此时微透镜的口径D，高度H，体积大小表示为
Figure PCTCN2020124299-appb-000002
当单台阶柱体光刻胶31高宽比小于0.07，即单台阶柱体光刻胶31的直径相对光刻胶高度比较大时，单台阶柱体光刻胶31在熔融收缩后形成微透镜10时会出现中心塌陷的情况，如图3中所示。
请参见图4，对中心对称的二台阶柱体光刻胶阵列加热熔融，在表面张力作用下自然形成球冠状的微透镜阵列。请参见图1，对在基板20上的中心对称的二台阶柱体光刻胶阵列在热熔前，二台阶柱体光刻胶32的第一台阶直径d1，高度h1，第二台阶直径d2，高度h2，其体积大小表示为
Figure PCTCN2020124299-appb-000003
F4、F5、F6分别表示第一台阶柱体光刻胶与空气之间的表面张力、基板20与空气之间的表面张力、第一台阶柱体光刻胶与基板20的表面张力，F7、F8、F9分别表示第二台阶柱体光刻胶与空气之间的表面张力、第一台阶柱体光刻胶与空气之间的表面张力、第二台阶柱体光刻胶与第一台阶柱体光刻胶之间的表面张力，此时，二台阶柱体光刻胶在综合表面张力作用下处于平衡状态。中心 对称的二台阶柱体光刻胶阵列在热熔后，二台阶柱体光刻胶32表面张力作用逐渐失去平衡，开始变形并向中心收缩，直到形成中心对称的球冠状形貌，当表面张力作用再次达到平衡时，球冠形貌不再变化，从而形成固定接触角为θ的微透镜10，形状如图2所示。
对单台阶或多台阶柱体光刻胶阵列，每个台阶的柱体光刻胶都具有直径d、高度h、该台阶的柱体光刻胶与空气之间的表面张力、该台阶的柱体光刻胶与其所在基板20或所在台阶柱体光刻胶的之间的表面张力、以及所在基板20或所在台阶柱体光刻胶与空气之间的表面张力，其中，体积可控参量为直径d和高度h两个数目，表面张力参量数目为3个。对于N台阶柱体光刻胶，其体积可控参量数目是N*2，其表面张力可控参量数目是N*3。因此，对于多台阶柱体光刻胶的可控、可优化参量更多，对微透镜的表面控制更加灵活。相比单台阶柱体光刻胶阵列在热熔时容易出现塌陷的情况，多台阶柱体光刻胶阵列热熔时，由于表面张力可控参量数目的成倍增加，因此降低了出现塌陷的几率，提高了微透镜制备的成功率。
采用本发明所提出的微透镜阵列制备方法，通过对N台阶柱体光刻胶分布设计，结合不完全热熔法，可以获得不同类型的微透镜阵列。请参见图5，将四台阶柱体光刻胶33中心偏置在基板20上，结合不完全热熔法，即通过严格控制热熔温度和时间长短，可以获得中心不对称即倾斜微透镜阵列，倾斜微透镜30如图6所示。
该制备方法不需要制备出实体掩模版，只需要根据需求设计出所需要的数字掩模版图文件，并对其进行处理得到数据文件，将数据文件输入到光刻控制系统中，降低了加工成本。所述微透镜的孔径由所述N台阶柱体光刻胶的台阶数、各台阶直径、各台阶高度、以及所述热熔温度和所述热熔时间控制。可通过对N套数字掩模版图文件的灵活设计和优化来控制台阶的分布形式和直径大小，通过调制每层台阶的曝光剂量来控制相应台阶的柱体光刻胶的高度，避免了柱体光刻胶在熔融收缩后会出现中心塌陷的情况，提升微透镜数值孔径的加工范围，提高了微透镜的制备成功率和光刻效率。
请参见图7至图11，第一实施例通过本发明的方法制备得到中心对称微透镜阵列，该微透镜阵列的微透镜的口径为30.2um，高度为5.4um，具体制备步骤为：
步骤1、建立直写光刻程序：如图7所示，设计出11、12和13三套数字掩模版图文件，每个所述数字掩模版图文件具有若干相同的图样，若干图样等间距对称排布。具体的，11数字掩模版图文件具有图样111；12数字掩模版图文件具有图样121；13数字掩模版图文件具有图样131。三套所述数字掩模版图文件上的所述图样的直径不同。本实施例中，图样111的直径为30um；图样121的直径为20um；图样131的直径为10um。请参见图8，三套数字掩模版图文件重叠后其所述图样的中心线重叠，即相应位置的图样111、图样121以及图样131的中心线重叠。在每套所述数字掩模版图文件左下角的相应位置上设置对准十字标，以确保在数字掩模激光直写光刻时每套数字掩模版图文件的直写光刻起点在相应位置，具体的，11数字掩模版图文件设置有对准十字标112，12数字掩模版图文件和13数字掩模版图文件在相应位置设置有对准十字标(未图示)，三套数字掩模版图文件重叠后，三个对准十字标重叠在对准十字标112处。将三套数字掩模版图文件进行数据条带等间距切割得到数据文件，得到数据文件。将所述数据文件导入光刻控制系统，设定曝光剂量，以建立直写光刻程序，其中，曝光剂量包括光照度Ev和时间t，通过曝光剂量来控制每个台阶柱体光刻胶的高度。
本发明所使用的数字掩模激光直写光刻系统是统一以版图左下角为光刻起点，按数据条带顺序依次进行直写光刻。具体的，以11数字掩模版图文件为例，如图9所示，11数字掩模版图文件等间距切割得到n个数据条带，以5个数据条带为例，从左向右依次排布有数据条带113、数据条带114、数据条带115、数据条带116以及数据条带117，其中对准十字标112设置在数据条带113中。进行直写光刻时，以对准十字标112为光刻起点，先将数据条带113从下向上进行直写光刻，然后按数据条带顺序依次将数据条带114至数据条带117进行直写光刻。当有多套数字掩模版图文件进行直写光刻时，当第一数字掩模版图 文件光刻完成后，光刻平台系统自动移动到第二数字掩模版图文件光刻起始点进行直写光刻，完成后再次移动到下一个版图光刻起始点进行直写光刻。
步骤2、制备涂布有光刻胶的基板：先提供干净的基板(未图示)，在所述干净的基板上烘增粘剂，增粘剂为六甲基二硅胺(HMDS)，其目的为了提高基片对光刻胶的粘度。其中，所述基片选用4英寸圆形的硅片或者玻璃片，所提供的干净的基板采用先清洗后烘干的方式获得。然后选择旋涂方式在基片上均匀涂布AZ4620型号光刻胶，该光刻胶的粘度为400mpa，旋涂的速度为4500rpm，时间为30s。最后，对涂布在基片上的光刻胶膜软烘去除部分溶剂，防止光刻胶膜流动，具体的，软烘温度为100℃，时间为3分钟。将处理好的光刻胶基片进行检测得到旋涂的光刻胶的厚度为6um。在其他实施例中，如果使用大尺寸的基片进行涂布，则可选择刮涂或喷涂方式进行光刻胶涂布。
步骤3、数字掩模激光直写光刻：使用真空吸附系统将光刻胶基片固定于光刻平台中心区域，在光刻胶表面选择合适的区域，调用建立的直写光刻程序以对其进行数字掩模激光直写光刻。具体的，先从数字掩模版图文件11的对准十字标111作为光刻起点，按数据条带顺序依次进行直写光刻，当数字掩模版图文件11光刻完成后，光刻平台系统自动移动到数字掩模版图文件12的对准十字标作为光刻起始点进行直写光刻，当数字掩模版图文件12光刻完成后，再次移动到数字掩模版图文件13的对准十字标作为光刻起始点进行直写光刻，当数字掩模版图文件13光刻完成后，制备获得中心对称的三台阶柱体光刻胶阵列，关掉真空吸附系统，将载有三台阶柱体光刻胶阵列基片取下。
步骤4、后烘、显影、烘干：将所述步骤S3得到的所述三台阶柱体光刻胶阵列放到热板上进行后烘，以消除驻波效应，具体的，后烘温度为100℃，时间为1分钟。待三台阶柱体光刻胶阵列冷却后进行显影，所述显影采用0.8％的NaOH碱性溶液作为显影溶液，所述显影的时间为60s-120s。最后进行烘干，所述烘干方法为使用洁净氮气将基片表面吹干。将得到的所述三台阶柱体光刻胶阵列经显微镜检测，如图10所示，三台阶柱体的底面直径为30.1um，总高度为5.5um。
步骤5、光刻胶热熔：将所述步骤S4得到的所述三台阶柱体光刻胶阵列进行完全热熔处理，将其放置在热板上进行高温加热，温度为145℃，加热时间为20分钟，三台阶柱体光刻胶阵列达到玻璃化温度以上，所述三台阶柱体光刻胶逐渐熔融，所述三台阶柱体光刻胶在表面张力作用下逐渐失去平衡，开始变形并向中间收缩，直到形成球冠状形貌，此时表面张力再次达到平衡，冷却后获得微透镜阵列。将得到的微透镜阵列经显微镜检测，所述微透镜阵列包括若干个微透镜，每个所述微透镜的外轮廓为弧形，如图11所示，微透镜的口径为30.2um，高度为5.4um。
请参见图12至图14，第二实施例通过本发明的方法制备得到中心不对称微透镜阵列，该中心不对称微透镜阵列的微透镜的口径为31.1um，高度为7.37um，具体制备步骤为：
步骤1、建立直写光刻程序：设计出四套数字掩模版图文件，方法与第一实施例相同，在此不再赘述，本实例中，第一数字掩模版图文件21上的图样211的直径为30um；第二数字掩模版图文件(未图示)上的图样221的直径为25um；第三数字掩模版图文件上(未图示)的图样231的直径为20um；第四数字掩模版图文件(未图示)上的图样241的直径为15um。请参见图12，四套数字掩模版图文件重叠后其所述相应图样的中心线偏置并且相应图样的边缘的一点重叠，在其他实施例中，多套数字掩模版图文件重叠后，其所述相应图样可以设置为至少部分中心线偏置。在每套所述数字掩模版图文件左下角的相应位置上设置对准十字标，四套数字掩模版图文件重叠后，四个对准十字标重叠在对准十字标212位置处，以确保在数字掩模激光直写光刻时每套数字掩模版图文件的直写光刻起点在相应位置。将四套数字掩模版图文件按着第一实施例方法进行数据条带等间距切割得到数据文件。将所述数据文件导入光刻控制系统，设定曝光剂量，以建立直写光刻程序，其中，曝光剂量包括光照度Ev和时间t，通过曝光剂量来控制每个台阶柱体光刻胶的高度。
步骤2、制备涂布有光刻胶的基板：制备方法与第一实施例相同，在此不再赘述，将处理好的光刻胶基片进行检测得到旋涂的光刻胶的厚度为8um。
步骤3、数字掩模激光直写光刻：直写光刻方法与第一实施例相同，在此不再赘述，制备获得中心不对称的四台阶柱体光刻胶阵列。
步骤4、后烘、显影、烘干：将所述步骤S3得到的所述四阶柱体光刻胶阵列使用第一实施例所示发方法进行后烘、显影以及烘干处理，得到的所述四台阶柱体光刻胶阵列经显微镜检测，如图13所示，四台阶柱体的直径为30.08um，总高度为7.89um。
步骤5、光刻胶热熔：将所述步骤S4得到的所述四台阶柱体光刻胶阵列进行不完全热熔处理，将其放置在热板上进行高温加热，温度为130℃，加热时间为90秒，四台阶柱体光刻胶阵列达到玻璃化温度以上，所述四台阶柱体光刻胶逐渐熔融，所述四台阶柱体光刻胶在表面张力作用下逐渐失去平衡，开始变形并向中间收缩，直到形成球冠状形貌，此时表面张力再次达到平衡，冷却后获得微透镜阵列。将得到的微透镜阵列经显微镜检测，所述微透镜阵列包括若干个微透镜，每个所述微透镜的外轮廓由两段以上不同曲率的弧形段组成，如图14所示，微透镜的口径为31.1um，高度为7.37um。
综上，本发明所提供的微透镜阵列的制备方法采用数字掩模激光直写光刻方法和光刻胶热熔法相结合的加工技术，无需制备实体掩模版，通过增多可控参量数目来提高对得到的微透镜表面可控性，可制备微透镜阵列，该方法工艺简单、加工效率高、制备成功率高、加工成本更低、设计更加灵活以及对微透镜表面可控性强。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种微透镜阵列制备方法，其特征在于，方法步骤如下：
    S1、提供已涂布有光刻胶的基板，在所述基板上调用预置的直写光刻程序以对其进行数字掩模激光直写光刻，以制备获得N台阶柱体光刻胶阵列；
    S2、将所述步骤S1得到的所述N台阶柱体光刻胶阵列依次进行后烘、显影、烘干；
    S3、将所述步骤S2得到的所述N台阶柱体光刻胶阵列进行热熔，达到玻璃化温度以上，所述N台阶柱体光刻胶逐渐熔融，所述N台阶柱体光刻胶在表面张力作用下逐渐失去平衡，开始变形并向中间收缩，直到形成球冠状形貌，时表面张力再次达到平衡，冷却后获得微透镜阵列。
  2. 如权利要求1所述的微透镜阵列制备方法，其特征在于，所述步骤S3得到的所述微透镜阵列包括若干个微透镜，每个所述微透镜的外轮廓呈弧形或者由两段以上不同曲率的弧形段组成。
  3. 如权利要求2所述的微透镜阵列制备方法，其特征在于，所述微透镜阵列为中心对称微透镜阵列或中心不对称微透镜阵列。
  4. 如权利要求2所述的微透镜阵列制备方法，其特征在于，所述微透镜的孔径由所述N台阶柱体光刻胶的台阶数、各台阶直径、各台阶高度、以及所述热熔温度和所述热熔时间控制。
  5. 如权利要求1所述的微透镜阵列制备方法，其特征在于，所述微透镜阵列制备方法还包括建立所述直写光刻程序，所述直写光刻程序的建立方法包括：确定台阶数N，设计所需的N套数字掩模版图文件；在每套所述数字掩模版图文件左下角的相应位置上设置对准标；将得到的所述数字掩模版图文件进行数据条带等间距切割得到数据文件；将所述数据文件导入光刻控制系统，设定每套所述数字掩模版图文件的曝光剂量，以建立直写光刻程序。
  6. 如权利要求5所述的微透镜阵列制备方法，其特征在于，所述直写光刻程序以对准标为起点，按数据条带顺序依次进行直写光刻，第一套所述数字掩模版图文件光刻完成后，自动移动到下一套所述数字掩模版图文件的对准标为起点进行直写光刻。
  7. 如权利要求5所述的微透镜阵列制备方法，其特征在于，每套所述数字掩模版图文件具有若干相同的图样，设计每套所述数字掩模版图文件包括所述图样的直径，所述曝光剂量控制相应直写光刻台阶的柱体光刻胶的高度。
  8. 如权利要求7所述的微透镜阵列制备方法，其特征在于，所述N套数字掩模版图文件重叠后其所述图样的中心线重叠或者至少部分图样的中心线偏置。
  9. 如权利要求1所述的微透镜阵列制备方法，其特征在于，所述涂布有光刻胶的基板的制备方法如下：采用先清洗后烘干的方式获得干净的基板，在所述干净的基板上烘增粘剂，涂布光刻胶，对光刻胶软烘去除部分溶剂。
  10. 如权利要求9所述的微透镜阵列制备方法，其特征在于，所述涂布光刻胶方法为旋涂、刮涂和喷涂中的一种。
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