WO2021103125A1 - 半导体功率器件的制造方法及半导体功率器件 - Google Patents

半导体功率器件的制造方法及半导体功率器件 Download PDF

Info

Publication number
WO2021103125A1
WO2021103125A1 PCT/CN2019/123905 CN2019123905W WO2021103125A1 WO 2021103125 A1 WO2021103125 A1 WO 2021103125A1 CN 2019123905 W CN2019123905 W CN 2019123905W WO 2021103125 A1 WO2021103125 A1 WO 2021103125A1
Authority
WO
WIPO (PCT)
Prior art keywords
trench
gate
oxide layer
power device
layer
Prior art date
Application number
PCT/CN2019/123905
Other languages
English (en)
French (fr)
Inventor
龚轶
毛振东
刘伟
袁愿林
王鑫
Original Assignee
苏州东微半导体有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 苏州东微半导体有限公司 filed Critical 苏州东微半导体有限公司
Publication of WO2021103125A1 publication Critical patent/WO2021103125A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Definitions

  • This application relates to the technical field of semiconductor power devices, for example, to a method for manufacturing a semiconductor power device and a semiconductor power device.
  • a related art semiconductor power device includes an n-type drain region, an n-type drift region located above the n-type drain region, and a gate trench recessed in the n-type drift region.
  • the gate trench includes an upper part and a lower part of the gate trench .
  • the gate polysilicon is located at the sidewall position of the upper part of the gate trench, the shielding gate is located in the lower part of the gate trench and extends up to the upper part of the gate trench, and the shielding gate is isolated from the n-type drift region and the gate polysilicon by a field oxide layer.
  • the gate polysilicon when the lower part of the gate trench is formed by etching, the gate polysilicon will be etched laterally, resulting in a reduction in the width of the gate polysilicon.
  • the field oxide layer is formed by an oxidation process, the gate polysilicon will also be etched. Oxidation causes the width of the gate polysilicon to be further reduced, which makes it difficult to draw out the gate polysilicon.
  • the present application provides a method for manufacturing a semiconductor power device and a semiconductor power device to solve the problem of gate polysilicon extraction in the related art.
  • the method for manufacturing a semiconductor power device includes:
  • the semiconductor substrate is etched using the hard mask layer as a mask, and a first trench is formed in the semiconductor substrate.
  • the width of the first trench is greater than that in the hard mask layer.
  • the gate oxide layer and the semiconductor substrate are etched using the hard mask layer as a mask to form a second trench in the semiconductor substrate, and the second trench is located in the first Under the trench
  • the semiconductor substrate is etched using the hard mask layer and the silicon nitride sidewall spacers as a mask to form a third trench in the semiconductor substrate, and the third trench is located in the Below the second groove;
  • a second layer of polysilicon is deposited and etched back to form a shielding gate in the third trench, the second trench and the first trench.
  • the silicon nitride sidewall spacers are first etched away, and then the second field oxide layer is deposited to form the second field oxide layer.
  • the width of the third trench is greater than the width of the second trench by increasing the lateral etching.
  • a semiconductor power device provided in this application is manufactured by using the manufacturing method of a semiconductor power device provided in this application, including:
  • An n-type drift region located above the n-type drain region
  • a gate trench recessed in the n drift region, the gate trench includes from top to bottom three parts: the upper part of the gate trench, the middle part of the gate trench, and the lower part of the gate trench;
  • P-type body regions located in the n-type drift region and located on both sides of the upper part of the gate trench;
  • a shield gate located in the lower part of the gate trench, the shield gate extends from bottom to top into the upper part of the gate trench, and the shield gate communicates with the n-type drift region and the gate through a field oxide layer isolation.
  • the width of the upper part of the gate trench is greater than the width of the middle part of the gate trench.
  • the width of the lower part of the gate trench is greater than the width of the middle part of the gate trench.
  • the thickness of the field oxide layer in the lower part of the gate trench is greater than the thickness of the field oxide layer in the upper part of the gate trench and the middle part of the gate trench.
  • silicon nitride sidewall spacers located in the upper part of the gate trench and in the middle part of the gate trench. Isolation.
  • the silicon nitride sidewall spacers isolate the field oxide layer from the n-type drift region in the middle of the gate trench.
  • the gate polysilicon is protected from being oxidized by the silicon nitride sidewalls, which ensures that the gate polysilicon is protected from oxidation. Width; secondly, after the first field oxide layer is formed by oxidation, the second field oxide layer is deposited to form a thicker field oxide layer in the third trench, which is beneficial to improve the charge balance at the bottom of the gate trench , Improve the withstand voltage of the semiconductor power device; again, when the third trench is formed by etching, the width of the third trench can be increased by increasing the lateral etching, thereby reducing the gap between adjacent third trenches.
  • the width of the n-type drift region is beneficial to increase the doping concentration of the n-type drift region and reduce the on-resistance of the semiconductor power device.
  • FIG. 1 is a schematic cross-sectional structure diagram of an embodiment of a semiconductor power device provided by the present application
  • FIGS. 2 to 7 are schematic cross-sectional structure diagrams of the main process technology node structure in the manufacturing method of the semiconductor power device provided by the present application.
  • a semiconductor power device provided by an embodiment of the present application includes an n-type drain region 21; The n-type drift region 22 above the region 21; the gate trench recessed in the n drift region 22, the gate trench includes the upper part of the gate trench, the middle part of the gate trench and the lower part of the gate trench from top to bottom; The p-type body region 28 in the n-type drift region 22 and located on both sides of the upper part of the gate trench; the n-type source region 29 in the p-type body region 28.
  • the gate 24 is located on the sidewall of the upper part of the gate trench.
  • the gate 24 is isolated from the p-type body region 28 by the gate oxide layer 23;
  • the shield gate 27 is located in the lower part of the gate trench, and the shield gate 27 extends from bottom to top.
  • the shielding gate 27 is isolated from the n-type drift region 22 by the field oxide layer 26 in the lower part of the gate trench, and the shielding gate 27 is connected to the n-type drift region 22 by the silicon nitride sidewall 25 and the field oxide layer 26 in the middle of the gate trench.
  • the n-type drift region 22 is isolated, and the shielding gate 27 is isolated from the gate 24 in the upper part of the gate trench by the silicon nitride sidewall spacer 25 and the field oxide layer 26; the silicon nitride sidewall spacer 25 is an optional structure, that is, it may not be formed Silicon nitride sidewalls, so that the shielding gate 27 is only isolated from the n-type drift region 22 by the field oxide layer 26 in the middle of the gate trench, and the shielding gate 27 is only separated from the n-type drift region 22 by the field oxide layer 26 and the gate 24 in the upper part of the gate trench. isolation.
  • the width of the upper part of the gate trench is greater than the width of the middle part of the gate trench.
  • the width of the lower part of the gate trench is greater than the width of the middle part of the gate trench, which can reduce the width of the n-type drift region 22 between the lower parts of adjacent gate trenches, which is beneficial to improve the width of the n-type drift region 22.
  • Doping concentration reduces the on-resistance of semiconductor power devices.
  • the thickness of the field oxide layer 26 in the lower part of the gate trench is greater than the thickness of the field oxide layer 26 in the upper part of the gate trench and the middle part of the gate trench, which helps to improve the charge balance at the bottom of the gate trench and increase the semiconductor power.
  • the withstand voltage of the device is provided.
  • FIG. 2 to 7 are schematic cross-sectional structure diagrams of the main process technology node structure in the manufacturing method of the semiconductor power device provided by the present application.
  • a semiconductor substrate 20 is provided.
  • the material of the semiconductor substrate 20 is usually Silicon with n-type doping
  • a hard mask layer 30 is formed on the semiconductor substrate 20, and an opening is formed in the hard mask layer 30; then the semiconductor substrate 20 is etched using the hard mask layer 30 as a mask , Forming a first trench in the semiconductor substrate 20.
  • the width of the first trench is greater than the width of the opening in the hard mask layer 30 by increasing the lateral etching;
  • a trench is the upper part of the gate trench of the semiconductor power device of the embodiment of the application.
  • a gate oxide layer 23 is formed on the surface of the first trench, and then a first layer of polysilicon is deposited and the hard mask layer 30 is used as a mask to perform a process on the deposited first layer of polysilicon. Engraving back, a gate 24 is formed on the sidewall of the first trench.
  • the gate oxide layer 23 and the semiconductor substrate 20 are etched using the hard mask layer 30 as a mask to form a second trench in the semiconductor substrate 20, and the second trench is located Below the first trench and the width of the second trench is smaller than the width of the first trench, and the second trench is the middle of the gate trench of the semiconductor power device of the embodiment of the application.
  • the sidewall spacer 25 is a mask to etch the semiconductor substrate 20, and a third trench is formed in the semiconductor substrate 20.
  • the third trench is located below the second trench.
  • the third trench is the semiconductor of the embodiment of the application.
  • the width of the third trench is increased by increasing the lateral etching, so that the width of the third trench is greater than the width of the second trench, which can reduce the adjacent third trench.
  • the width of the n-type drift region between the trenches is beneficial to increase the doping concentration of the n-type drift region and reduce the on-resistance of the semiconductor power device.
  • thermal oxidation is performed to form a first field oxide layer on the surface of the third trench.
  • the gate 26 will not be oxidized; and then deposit A second field oxide layer is formed, and the second oxide layer and the first oxide layer together constitute the field oxide layer 26 of the semiconductor power device.
  • the field oxide layer 26 is formed by the method of thermal oxidation and then deposition, which can make the thickness of the field oxide layer thicker in the third trench, which is beneficial to improve the charge balance at the bottom of the gate trench and increase the withstand voltage of the semiconductor power device.
  • the silicon nitride sidewall spacer 25 may be etched away first, and then the second field oxide layer may be deposited.
  • a second layer of polysilicon is deposited and etched back to form a shielding gate 27 in the third trench, the second trench, and the first trench.
  • the source contact metal layer, the gate contact metal layer, the n-type drain region, the drain contact metal layer and other structures of the semiconductor power device can be prepared by the manufacturing method of the semiconductor power device in the related art. This step will not be shown in detail.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

本申请提供的一种半导体功率器件的制造方法及半导体功率器件，所述方法包括：以硬掩膜层为掩膜对半导体衬底进行刻蚀，在半导体衬底内形成第一沟槽；在第一沟槽的表面形成栅氧化层；在第一沟槽的侧壁处形成栅极；以硬掩膜层为掩膜对栅氧化层和半导体衬底进行刻蚀，在半导体衬底内形成第二沟槽；在第一沟槽和第二沟槽内形成氮化硅侧墙；以硬掩膜层和氮化硅侧墙为掩膜对半导体衬底进行刻蚀，在半导体衬底内形成第三沟槽；进行热氧化，在第三沟槽的表面形成第一场氧化层；淀积形成第二场氧化层；淀积第二层多晶硅并回刻，在第三沟槽、第二沟槽和第一沟槽内形成屏蔽栅。

Description

半导体功率器件的制造方法及半导体功率器件
本公开要求在2019年11月28日提交中国专利局、申请号为201911194101.6的中国专利申请的优先权，以上申请的全部内容通过引用结合在本公开中。
技术领域
本申请涉及半导体功率器件技术领域，例如涉及一种半导体功率器件的制造方法及半导体功率器件。
背景技术
相关技术的半导体功率器件包括n型漏区，位于n型漏区之上的n型漂移区，凹陷在n型漂移区中的栅沟槽，栅沟槽包括栅沟槽的上部和下部两部分。栅极多晶硅位于栅沟槽上部的侧壁位置处，屏蔽栅位于栅沟槽下部内并向上延伸至栅沟槽上部内，屏蔽栅通过场氧化层与n型漂移区和栅极多晶硅隔离。相关技术中，在刻蚀形成栅沟槽的下部时，栅极多晶硅会被横向刻蚀，造成栅极多晶硅的宽度缩小，同时，在通过氧化工艺形成场氧化层时，栅极多晶硅也会被氧化，造成栅极多晶硅的宽度被进一步缩小，这造成栅极多晶硅的引出变难。
发明内容
本申请提供一种半导体功率器件的制造方法及半导体功率器件，以解决相关技术中的栅极多晶硅引出难的问题。
本申请提供的半导体功率器件的制造方法，包括：
一半导体衬底；
在所述半导体衬底上形成硬掩膜层，并在所述硬掩膜层中形成开口；
以所述硬掩膜层为掩膜对所述半导体衬底进行刻蚀，在所述半导体衬底内形成第一沟槽，所述第一沟槽的宽度大于所述硬掩膜层中的开口的宽度；
在所述第一沟槽的表面形成栅氧化层；
淀积第一层多晶硅并以所述硬掩膜层为掩膜对所述第一层多晶硅进行回刻，在所述第一沟槽的侧壁处形成栅极；
以所述硬掩膜层为掩膜对所述栅氧化层和所述半导体衬底进行刻蚀，在所述半导体衬底内形成第二沟槽，所述第二沟槽位于所述第一沟槽下方；
淀积一层氮化硅并回刻，在所述第一沟槽和所述第二沟槽内形成氮化硅侧墙；
以所述硬掩膜层和所述氮化硅侧墙为掩膜对所述半导体衬底进行刻蚀，在所述半导体衬底内形成第三沟槽，所述第三沟槽位于所述第二沟槽下方；
进行热氧化，在所述第三沟槽的表面形成第一场氧化层；
淀积形成第二场氧化层，所述第二氧化层和所述第一氧化层共同构成半导体功率器件的场氧化层；
淀积第二层多晶硅并回刻，在所述第三沟槽、第二沟槽和第一沟槽内形成屏蔽栅。
在形成所述第一场氧化层后，先刻蚀掉所述氮化硅侧墙，再淀积形成所述第二场氧化层。
在刻蚀形成所述第三沟槽时，通过增加横向的刻蚀，使得第三沟槽的宽度大于所述第二沟槽的宽度。
本申请提供的一种半导体功率器件，采用本申请提供的半导体功率器件的制造方法制造，包括：
n型漏区；
位于所述n型漏区之上的n型漂移区；
凹陷在所述n漂移区中的栅沟槽，所述栅沟槽自上而下包括栅沟槽上部、栅沟槽中部和栅沟槽下部三部分；
位于所述n型漂移区内且位于所述栅沟槽上部的两侧的p型体区；
位于所述p型体区内的n型源区；
位于所述栅沟槽上部的侧壁处的栅极，所述栅极通过栅氧化层与所述p型体区隔离；
位于所述栅沟槽下部内的屏蔽栅，所述屏蔽栅自下而上延伸至所述栅沟槽上部内，所述屏蔽栅通过场氧化层与所述n型漂移区和所述栅极隔离。
所述栅沟槽上部的宽度大于所述栅沟槽中部的宽度。
所述栅沟槽下部的宽度大于所述栅沟槽中部的宽度。
所述栅沟槽下部内的场氧化层的厚度大于所述栅沟槽上部和所述栅沟槽中部内的场氧化层的厚度。
还包括位于所述栅沟槽上部和所述栅沟槽中部内的氮化硅侧墙，所述氮化硅侧墙在所述栅沟槽上部内将所述场氧化层于所述栅极隔离，所述氮化硅侧墙在所述栅沟槽中部内将所述场氧化层与所述n型漂移区隔离。
本申请提供的一种半导体功率器件的制造方法，首先，在第三沟槽表面氧化形成第一场氧化层时，栅极多晶硅被氮化硅侧墙保护不被氧化，保证了栅极多晶硅的宽度；其次，在氧化形成第一场氧化层后，再淀积形成第二场氧化层，可以使得第三沟槽内有更厚的场氧化层厚度，有利于改善栅沟槽底部的电荷平衡，提高半导体功率器件的耐压；再次，在刻蚀形成第三沟槽时，可以通过增加横向的刻蚀来增加第三沟槽的宽度，从而可以减小相邻的第三沟槽之间的n型漂移区的宽度，这有利于提高n型漂移区的掺杂浓度，降低半导体功率器件的导通电阻。
附图说明
图1是本申请提供的一种半导体功率器件的一个实施例的剖面结构示意图；
图2至图7是本申请提供的半导体功率器件的制造方法中的主要工艺技术节点结构的剖面结构示意图。
具体实施方式
以下将结合本申请实施例中的附图，通过具体方式，完整地描述本申请的技术方案。应当理解，本申请所使用的诸如“具有”、“包含”以及“包括”等术语并不配出一个或多个其它元件或其组合的存在或添加。同时，为清楚地说明本申请的具体实施方式，说明书附图中所列图形大小并不代表实际尺寸，说明书附图是示意性的，不应限定本申请的范围。
图1是本申请提供的一种半导体功率器件的一个实施例的剖面结构示意图，如图1所示，本申请实施例提供的一种半导体功率器件，包括n型漏区21；位于n型漏区21之上的n型漂移区22；凹陷在n漂移区22内的栅沟槽，该栅沟槽自上而下包括栅沟槽上部、栅沟槽中部和栅沟槽下部三部分；位于所述n型漂移区22内且位于栅沟槽上部的两侧的p型体区28；位于p型体区28内的n型源区29。
位于栅沟槽上部的侧壁处的栅极24，栅极24通过栅氧化层23与p型体 区28隔离；位于栅沟槽下部内的屏蔽栅27，屏蔽栅27自下而上延伸至栅沟槽上部内，屏蔽栅27在栅沟槽下部内通过场氧化层26与n型漂移区22隔离，屏蔽栅27在栅沟槽中部内通过氮化硅侧墙25和场氧化层26与n型漂移区22隔离，屏蔽栅27在栅沟槽上部内通过氮化硅侧墙25和场氧化层26与栅极24隔离；其中氮化硅侧墙25为可选结构，即可以不形成氮化硅侧墙，从而，屏蔽栅27在栅沟槽中部内仅通过场氧化层26与n型漂移区22隔离，屏蔽栅27在栅沟槽上部内仅通过场氧化层26与栅极24隔离。
为简化本申请的半导体功率器件的制造工艺，可选的，栅沟槽上部的宽度大于所述栅沟槽中部的宽度。
可选的，栅沟槽下部的宽度大于栅沟槽中部的宽度，这可以减小相邻的栅沟槽下部之间的n型漂移区22的宽度，这有利于提高n型漂移区22的掺杂浓度，降低半导体功率器件的导通电阻。
可选的，栅沟槽下部内的场氧化层26的厚度大于栅沟槽上部和栅沟槽中部内的场氧化层26的厚度，这有利于改善栅沟槽底部的电荷平衡，提高半导体功率器件的耐压。
图2至图7是本申请提供的半导体功率器件的制造方法中的主要工艺技术节点结构的剖面结构示意图，首先如图2所示，提供一半导体衬底20，半导体衬底20的材质通常为硅且具有n型掺杂，在半导体衬底20上形成硬掩膜层30，并在硬掩膜层30中形成开口；然后以硬掩膜层30为掩膜对半导体衬底20进行刻蚀，在半导体衬底20内形成第一沟槽，在刻蚀形成第一沟槽时，通过增加横向的刻蚀，使得第一沟槽的宽度大于硬掩膜层30中的开口的宽度；第一沟槽即为本申请实施例的半导体功率器件的栅沟槽上部。
接下来，如图3所示，在第一沟槽的表面形成栅氧化层23，然后淀积第一层多晶硅并以硬掩膜层30为掩膜对所淀积形成的第一层多晶硅进行回刻，在第一沟槽的侧壁处形成栅极24。
接下来，如图4所示，以硬掩膜层30为掩膜对栅氧化层23和半导体衬底20进行刻蚀，在半导体衬底20内形成第二沟槽，第二沟槽位于所述第一沟槽下方且第二沟槽的宽度小于第一沟槽的宽度，第二沟槽即为本申请实施例的半导体功率器件的栅沟槽中部。
接下来，如图5所示，淀积一层氮化硅并回刻，在第一沟槽和第二沟槽内形成氮化硅侧墙25；然后以硬掩膜层30和氮化硅侧墙25为掩膜对半导体衬底20进行刻蚀，在半导体衬底20内形成第三沟槽，第三沟槽位于第二沟槽下方，第三沟槽即为本申请实施例的半导体功率器件的栅沟槽下部。在刻蚀形成第三沟槽时，通过增加横向的刻蚀来增加第三沟槽的宽度，使得第三沟槽的宽度大于第二沟槽的宽度，这可以减小相邻的第三沟槽之间的n型漂移区的宽度，有利于提高n型漂移区的掺杂浓度，降低半导体功率器件的导通电阻。
接下来，如图6所示，进行热氧化，在第三沟槽的表面形成第一场氧化层，此时由于氮化硅侧墙25的包含，栅极26不会被氧化；然后淀积形成第二场氧化层，所述第二氧化层和所述第一氧化层共同构成半导体功率器件的场氧化层26。通过先热氧化再淀积的方法形成场氧化层26，可以使得第三沟槽内有更厚的场氧化层厚度，有利于改善栅沟槽底部的电荷平衡，提高半导体功率器件的耐压。可选的，在形成所述第一场氧化层后，可以先刻蚀掉氮化硅侧墙25，再淀积形成所述第二场氧化层。
接下来，如图7所示，淀积第二层多晶硅并回刻，在所述第三沟槽、第二沟槽和第一沟槽内形成屏蔽栅27。
最后，通过相关技术的半导体功率器件的制造方法制备得到半导体功率器件的源极接触金属层、栅极接触金属层、n型漏区、漏极接触金属层等结构即可，本申请实施例中不再具体展示该步骤。

Claims (8)

  1. 半导体功率器件的制造方法，包括：
    提供一半导体衬底；
    在所述半导体衬底上形成硬掩膜层，并在所述硬掩膜层中形成开口；
    以所述硬掩膜层为掩膜对所述半导体衬底进行刻蚀，在所述半导体衬底内形成第一沟槽，所述第一沟槽的宽度大于所述硬掩膜层中的开口的宽度；
    在所述第一沟槽的表面形成栅氧化层；
    淀积第一层多晶硅并以所述硬掩膜层为掩膜对所述第一层多晶硅进行回刻，在所述第一沟槽的侧壁处形成栅极；
    以所述硬掩膜层为掩膜对所述栅氧化层和所述半导体衬底进行刻蚀，在所述半导体衬底内形成第二沟槽，所述第二沟槽位于所述第一沟槽下方；
    淀积一层氮化硅并回刻，在所述第一沟槽和所述第二沟槽内形成氮化硅侧墙；
    以所述硬掩膜层和所述氮化硅侧墙为掩膜对所述半导体衬底进行刻蚀，在所述半导体衬底内形成第三沟槽，所述第三沟槽位于所述第二沟槽下方；
    进行热氧化，在所述第三沟槽的表面形成第一场氧化层；
    淀积形成第二场氧化层，所述第二氧化层和所述第一氧化层共同构成半导体功率器件的场氧化层；
    淀积第二层多晶硅并回刻，在所述第三沟槽、第二沟槽和第一沟槽内形成屏蔽栅。
  2. 如权利要求1所述的半导体功率器件的制造方法，其中，在形成所述第一场氧化层后，先刻蚀掉所述氮化硅侧墙，再淀积形成所述第二场氧化层。
  3. 如权利要求1所述的半导体功率器件的制造方法，其中，在刻蚀形成所述第三沟槽时，通过增加横向的刻蚀，使得第三沟槽的宽度大于所述第二沟槽的宽度。
  4. 如权利要求1所述的半导体功率器件的制造方法制造的半导体功率器件，包括：
    n型漏区；
    位于所述n型漏区之上的n型漂移区；
    凹陷在所述n漂移区中的栅沟槽，所述栅沟槽自上而下包括栅沟槽上部、 栅沟槽中部和栅沟槽下部三部分；
    位于所述n型漂移区内且位于所述栅沟槽上部的两侧的p型体区；
    位于所述p型体区内的n型源区；
    位于所述栅沟槽上部的侧壁处的栅极，所述栅极通过栅氧化层与所述p型体区隔离；
    位于所述栅沟槽下部内的屏蔽栅，所述屏蔽栅自下而上延伸至所述栅沟槽上部内，所述屏蔽栅通过场氧化层与所述n型漂移区和所述栅极隔离。
  5. 如权利要求4所述的半导体功率器件，其中，所述栅沟槽上部的宽度大于所述栅沟槽中部的宽度。
  6. 如权利要求4所述的半导体功率器件，其中，所述栅沟槽下部的宽度大于所述栅沟槽中部的宽度。
  7. 如权利要求4所述的半导体功率器件，其中，所述栅沟槽下部内的场氧化层的厚度大于所述栅沟槽上部和所述栅沟槽中部内的场氧化层的厚度。
  8. 如权利要求4所述的半导体功率器件，还包括位于所述栅沟槽上部和所述栅沟槽中部内的氮化硅侧墙，所述氮化硅侧墙在所述栅沟槽上部内将所述场氧化层于所述栅极隔离，所述氮化硅侧墙在所述栅沟槽中部内将所述场氧化层与所述n型漂移区隔离。
PCT/CN2019/123905 2019-11-28 2019-12-09 半导体功率器件的制造方法及半导体功率器件 WO2021103125A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201911194101.6 2019-11-28
CN201911194101.6A CN112864019A (zh) 2019-11-28 2019-11-28 半导体功率器件的制造方法及半导体功率器件

Publications (1)

Publication Number Publication Date
WO2021103125A1 true WO2021103125A1 (zh) 2021-06-03

Family

ID=75995834

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/123905 WO2021103125A1 (zh) 2019-11-28 2019-12-09 半导体功率器件的制造方法及半导体功率器件

Country Status (2)

Country Link
CN (1) CN112864019A (zh)
WO (1) WO2021103125A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117558622A (zh) * 2024-01-11 2024-02-13 粤芯半导体技术股份有限公司 一种沟槽刻蚀方法及沟槽型栅器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299618A (ja) * 2001-01-24 2002-10-11 Toyota Central Res & Dev Lab Inc 半導体装置とその製造方法
US20070138547A1 (en) * 2005-12-09 2007-06-21 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
TW201112418A (en) * 2009-09-16 2011-04-01 Anpec Electronics Corp Overlapping trench gate semiconductor device and manufacturing method thereof
CN107527948A (zh) * 2017-07-28 2017-12-29 上海华虹宏力半导体制造有限公司 屏蔽栅沟槽mosfet及其制造方法
CN108376647A (zh) * 2018-04-19 2018-08-07 张帅 屏蔽栅场效应晶体管及其制造方法（哑铃形）

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130001678A1 (en) * 2011-06-29 2013-01-03 Stmicroelectronics S.R.L. High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299618A (ja) * 2001-01-24 2002-10-11 Toyota Central Res & Dev Lab Inc 半導体装置とその製造方法
US20070138547A1 (en) * 2005-12-09 2007-06-21 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
TW201112418A (en) * 2009-09-16 2011-04-01 Anpec Electronics Corp Overlapping trench gate semiconductor device and manufacturing method thereof
CN107527948A (zh) * 2017-07-28 2017-12-29 上海华虹宏力半导体制造有限公司 屏蔽栅沟槽mosfet及其制造方法
CN108376647A (zh) * 2018-04-19 2018-08-07 张帅 屏蔽栅场效应晶体管及其制造方法（哑铃形）

Also Published As

Publication number Publication date
CN112864019A (zh) 2021-05-28

Similar Documents

Publication Publication Date Title
US11088253B2 (en) Gate structure of semiconductor device and manufacturing method therefor
US9698248B2 (en) Power MOS transistor and manufacturing method therefor
US20150179750A1 (en) Dual oxide trench gate power mosfet using oxide filled trench
WO2018121600A1 (zh) 超级结功率晶体管及其制备方法
CN105702736B (zh) 屏蔽栅-深沟槽mosfet的屏蔽栅氧化层及其形成方法
US20130069126A1 (en) Germanium-based nmos device and method for fabricating the same
TW201336083A (zh) 在溝槽ｄｍｏｓ中製備帶有階梯厚度的閘極氧化物的方法
TWI684276B (zh) 溝渠式功率電晶體及其製作方法
KR101832334B1 (ko) 반도체소자 및 그 제조방법
CN107731918B (zh) 半导体结构及其制造方法
JP2009130357A (ja) トレンチｍｏｓｆｅｔ及びその製造方法
CN105514022A (zh) 在沟槽内部表面形成场氧化硅的方法
WO2016161842A1 (zh) 横向扩散金属氧化物半导体场效应管及其制造方法
WO2021103125A1 (zh) 半导体功率器件的制造方法及半导体功率器件
TW202030841A (zh) 斷閘極金氧半場效電晶體的閘極結構及其製造方法
CN106024607B (zh) 屏蔽栅功率mosfet的制造方法
CN101506956A (zh) 半导体设备的制作方法
CN105118857A (zh) 一种沟槽型功率mosfet的制造方法
WO2023206986A1 (zh) 碳化硅半导体器件及其制作方法
US11315824B2 (en) Trench isolation structure and manufacturing method therefor
WO2022082902A1 (zh) 半导体功率器件的制造方法
CN114999916A (zh) 一种屏蔽栅mosfet(sgt)的制作方法
JP2009081427A (ja) 半導体装置および半導体装置の製造方法
KR100730466B1 (ko) 트렌치 트랜지스터 및 그의 제조 방법
KR20140110209A (ko) 반도체소자 및 그 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19954115

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19954115

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 19954115

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 24/03/2023)

122 Ep: pct application non-entry in european phase

Ref document number: 19954115

Country of ref document: EP

Kind code of ref document: A1