WO2021095625A1 - Élément de filtre et élément d'imagerie comprenant celui-ci - Google Patents

Élément de filtre et élément d'imagerie comprenant celui-ci Download PDF

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Publication number
WO2021095625A1
WO2021095625A1 PCT/JP2020/041324 JP2020041324W WO2021095625A1 WO 2021095625 A1 WO2021095625 A1 WO 2021095625A1 JP 2020041324 W JP2020041324 W JP 2020041324W WO 2021095625 A1 WO2021095625 A1 WO 2021095625A1
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filter element
substrate
concave
convex
along
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PCT/JP2020/041324
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English (en)
Japanese (ja)
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篤史 小野
篤孝 宮道
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国立大学法人静岡大学
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Priority to JP2021556051A priority Critical patent/JP7560888B2/ja
Publication of WO2021095625A1 publication Critical patent/WO2021095625A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

Definitions

  • One form of the present invention relates to a filter element and an image pickup device including the filter element.
  • filter elements using surface plasmon resonance have been developed.
  • a filter having a structure formed by arranging nanoscale fine through holes in a metal thin film is known (see Non-Patent Document 1 below).
  • the selectivity of the transmitted wavelength with respect to the light in a specific wavelength range is shown by controlling the diameter of the through hole and the arrangement period.
  • a filter having another structure a filter having a concentric concavo-convex structure periodically formed on one side of a metal film and a micropore provided at the center of the concavo-convex structure has been devised (Patent Document 1 below). ). Further, as a configuration for increasing the light transmission efficiency, an optical element having a concentric concavo-convex structure formed periodically at the same cycle on both sides of the metal film and a micropore provided at the center of the concavo-convex structure is also available. It is known (Patent Document 2 below). A filter having such a structure also exhibits selectivity of transmission wavelength by controlling the period of the concave-convex structure.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a filter element capable of narrowing the transmission wavelength and improving the light transmittance.
  • the filter element according to one embodiment of the present invention includes a substrate having light transmission and a metal film-like member formed along the main surface of the substrate. , Supported by the substrate to allow light to pass between one surface and the other surface on the opposite side of one surface and the outside, at equal intervals along one direction along the main surface of the substrate.
  • a first surface structure on one surface including concave and convex surfaces, which are formed so as to bend in a direction substantially perpendicular to the direction and are periodically formed at a specific cycle along one direction. It has a second surface structure on the other surface, including concave and convex surfaces that are periodically formed at specific cycles alternately along the direction.
  • the image pickup device includes a semiconductor substrate in which the light receiving elements are two-dimensionally arranged, and the above-mentioned filter element arranged so as to face the light receiving elements on the semiconductor substrate. ..
  • the filter element of the above form when light is incident on one surface of the film-like member from the outside, polarization is generated on one surface due to a periodic uneven structure, and surface plasmon resonance is excited (cup). At the same time, this causes polarization on the other surface to be opposite to that on one surface, inducing surface plasmon resonance, and converting the induced surface plasmon resonance into propagating light (decoupling). It is emitted to the outside from the other surface side.
  • the light transmittance of the incident light can be improved.
  • the light receiving element can receive light in a narrow band with a high light transmittance, so that an image sensor having high wavelength selectivity and high sensitivity can be realized. Can be done.
  • the substrate contains a dielectric material.
  • the surface plasmon is efficiently excited, and the light transmittance of the incident light can be further improved.
  • the film-like member further has linear slits formed periodically at a specific cycle on at least one of the concave and convex surfaces of the first surface structure so as to penetrate to the second surface structure. It is preferable to have.
  • the oscillating electric field of the incident light is concentrated in the slit, so that polarization can be efficiently generated, and as a result of providing a partition in the film-like member by the slit, the mode of polarization generated by the incident light also becomes. It can be stabilized. As a result, it is possible to further improve the light transmittance and further narrow the band.
  • the slits are periodically formed at a specific cycle on both the concave surface and the convex surface of the first surface structure. In this case, further improvement in light transmittance and further narrowing of the band can be realized.
  • the concave surface and the convex surface of the first surface structure are formed so as to extend linearly, and the slit is formed along the extending direction of the concave surface or the convex surface. In this case, it is possible to improve the light transmittance and narrow the band for the incident light having a specific polarization direction.
  • the film-like member has a uniform film thickness. According to such a configuration, surface plasmon resonance can be stably excited on both surfaces of the film-like member, and the light transmittance of incident light can be further improved.
  • the specific period is preferably in the range of 220 nm to 680 nm
  • the film thickness of the film-like member is preferably in the range of 10 nm to 50 nm
  • the slit width is 0 nm. It is preferably in the range of about 30 nm
  • the step between the concave surface and the convex surface in the first surface structure is preferably in the range of 20 nm to 70 nm.
  • FIG. 5 is a side view of the filter element 1A according to the modified example as viewed from the side surface side of the dielectric substrate 3. It is a graph which shows the result of having calculated the periodic dependence of the transmission spectrum of a filter element 1A by a simulation.
  • FIG. 5 is a side view of the filter element 1B according to the modified example as viewed from the side surface side of the dielectric substrate 3. It is a side view which looked at the filter element 1C which concerns on the modification from the side surface side of the dielectric substrate 3. It is a graph which shows the result of having calculated the transmission spectrum of a filter element 1B by a simulation.
  • FIG. 5 is a side view of the filter element 1A according to the modified example as viewed from the side surface side of the dielectric substrate 3. It is a side view which looked at the filter element 1C which concerns on the modification from the side surface side of the dielectric substrate 3. It is a graph which shows the result of having calculated the transmission spectrum of a filter element 1B by a simulation.
  • FIG. 5 is a side view of the filter element 1D according to the modified example as viewed from the side surface side of the dielectric substrate 3. It is a graph which shows the result of having calculated the periodic dependence of the transmission spectrum of a filter element 1D by a simulation.
  • FIG. 5 is a side view of the filter element 1E according to the modified example as viewed from the side surface side of the dielectric substrate 3. It is a graph which shows the result of having calculated the periodic dependence of the transmission spectrum of a filter element 1E by a simulation.
  • It is a top view of the metal thin film 5A, 5B, 5C, 5D which concerns on the modification. It is a top view which the uneven surface and the slit are formed by extending in a straight line, and the graph which shows the polarization intensity distribution.
  • FIG. 1 is a perspective view showing the structure of the filter element 1
  • FIG. 2 is a side view showing the structure of the metal thin film 5 constituting the filter element 1.
  • the filter element 1 is an optical element that receives incident light from the outside and transmits a component of a predetermined wavelength band of the incident light, and includes a dielectric substrate 3 and a metal thin film (film-like member) 5. It is configured.
  • the X-axis is defined in one direction along the main surface 3a of the dielectric substrate 3 constituting the filter element 1
  • the Y-axis is defined in the direction perpendicular to the X-axis along the main surface 3a.
  • the Z axis is defined so as to form the right-handed coordinate axes in the direction perpendicular to the X and Y axes.
  • the dielectric substrate 3 is a rectangular flat plate-shaped member made of a dielectric material having light transmission to light in a wavelength band from at least ultraviolet to infrared.
  • Examples of the dielectric material constituting the dielectric substrate 3 include silicon dioxide (SiO 2 ), silicon nitride (SiN), titanium dioxide (TiO 2 ), zinc sulfide (ZnS), magnesium fluoride (MgF 2 ), and a low dielectric constant. (Low-k) materials and the like are exemplified.
  • the metal thin film 5 is a thin film made of a metal made of a metal material such as aluminum, silver, gold, copper, platinum, indium, magnesium, gallium, and a transition metal nitride material such as titanium nitride, and has a uniform film thickness. It is embedded in the body substrate 3 along the main surface 3a. Specifically, in the metal thin film 5, one surface 5a on the main surface 3a side of the dielectric substrate 3 is completely covered with the dielectric material constituting the dielectric substrate 3, and the main surface of the dielectric substrate 3 is completely covered. The other surface 5b on the side of the main surface 3b on the opposite side of 3a is also completely covered with the dielectric material constituting the dielectric substrate 3. In other words, the metal thin film 5 is supported by the dielectric substrate 3 so that light can pass between one surface 5a and the outside and between the other surface 5b and the outside.
  • a transition metal nitride material such as titanium nitride
  • the metal thin film 5 is formed so as to be bent in a direction substantially parallel to the Z axis at equal intervals along the X axis direction, so that the first surface on one surface 5a is formed. It has a structure, a first surface structure on the other surface 5b, and a second surface structure integrated on the front and back sides.
  • the first surface structure is along the X-axis direction are periodically formed in a specific period T 1 alternately includes a concave 7a and the convex surface 7b extending linearly in the Y-axis direction.
  • the second surface structure is along the X-axis direction are periodically formed in a specific period T 1 alternately includes a convex 9b and the concave surface 9a extending linearly in the Y-axis direction.
  • These concave 7a and the convex surface 9b has a width W 1 along the X-axis direction is formed equal to the structure of the two sides of the same coin, convex 7b and concave 9a also, the width W along the X-axis direction by the structure of the two sides of the same coin 2 are formed equally.
  • the first surface structure is formed so that the distance of the step in the Z-axis direction between the concave surface 7a and the convex surface 7b is D 1
  • the second surface structure is between the convex surface 9b and the concave surface 9a. Is formed so that the distance of the step in the Z-axis direction is a value D 1 equal to that of the first surface structure.
  • the width W 1 and the width W 2 may be set equally or differently, but in the present embodiment, they are set equally.
  • the "period” mentioned above is the distance in the X-axis direction from the center positions of the concave and convex surfaces adjacent to each other along the X-axis of the center positions of the concave and convex surfaces, and the “width” is the unevenness. It is the distance in the X-axis direction between the centers of the bent portions of the metal thin film 5 on both sides of the surface.
  • the metal thin film 5 has predetermined slits extending linearly along the extending direction (Y-axis direction) of the concave surface 7a and the convex surface 7b in both the concave surface 7a and the convex surface 7b of the first surface structure.
  • slit 11 having a width W 3 is formed. The slit 11 penetrates in the Z-axis direction from the center of the concave surface 7a and the convex surface 7b in the X-axis direction to the center of the convex surface 9b and the concave surface 9a of the second surface structure.
  • the slits 11 formed in the concave 7a is arranged so as to line up in the period T 1 along the X-axis direction, a slit 11 formed in the convex surface 7b in the period T 1 along the X-axis direction They will be arranged side by side.
  • FIG. 3 is a side view showing a processing state of the filter element 1 in each manufacturing process.
  • a dielectric substrate 13 that forms a part of the dielectric substrate 3 is prepared, and the dielectric substrate 13 is cleaned (part (a) in FIG. 3).
  • the electron beam resist 15 is formed on the surface of the dielectric substrate 13 by spin coating (part (b) in FIG. 3).
  • the resist 15 for electron beams is drawn by an electron beam drawing apparatus (part (c) in FIG. 3). Specifically, when a positive resist is used as the electron beam resist 15, the portions corresponding to the concave surface 7a of the first surface structure and the convex surface 9b of the second surface structure are drawn. At this time, drawing a linear pattern with a period T 1 one-dimensionally periodically along the surface of the dielectric substrate 13. By this step, on the dielectric substrate 13, with the exposed surface corresponding to the concave 7a is formed to be periodically repeated at one-dimensionally periodic T 1, is periodically repeated in one-dimensionally periodic T 1 The electron beam resist 15 is left in a pattern corresponding to the convex surface 7b. When drawing the pattern, it may be performed by nanoimprint.
  • This period T 1 is important in determining the period of the uneven surface and determining the plasmon resonance wavelength corresponding to the transmission wavelength.
  • the period T 1 and the widths W 1 and W 2 in the first surface structure and the second surface structure are controlled to have various values.
  • the portion corresponding to the concave surface 7a of the first surface structure is removed to a predetermined depth (part (d) in FIG. 3).
  • the value of the step distance D1 in the first surface structure and the second surface structure is controlled by the depth removed by this dry etching.
  • a metal material such as aluminum is formed on the surface of the dielectric substrate 13 by vacuum deposition or sputtering.
  • the metal thin film 5 is formed (part (e) in FIG. 3).
  • the film thickness of the metal thin film 5 is controlled by the film thickness of the metal material formed by this step.
  • a slit 11 penetrating the metal thin film 5 on the dielectric substrate 13 from the first surface structure to the second surface structure is formed by etching the metal thin film 5 using a focused ion beam processing device.
  • the value of the width W 3 of the slit 11 is set by controlling the etching width by the focused ion beam processing apparatus.
  • a dielectric material by capping so as to cover the metal thin film 5 on the dielectric substrate 13, the dielectric substrate 3 in which the metal thin film 5 is embedded is formed ((g) in FIG. 3). Department).
  • the steps shown in parts (f) and (g) of FIG. 3 may be changed to the following steps. That is, the electron beam resist 17 is formed by spin coating on the dielectric substrate 13 on which the metal thin film 5 is formed (part (h) in FIG. 3). After that, drawing is performed on the electron beam resist 17 by an electron beam drawing device (part (i) in FIG. 3). Specifically, when a positive resist is used as the electron beam resist 17, a portion corresponding to the slit 11 on the first surface structure is drawn. At this time, a linear pattern is periodically drawn along the surface of the dielectric substrate 13.
  • the dielectric substrate 13 With the exposed surface corresponding to the center of the slit 11 of the concave 7a is formed to be periodically repeated at one-dimensionally periodic T 1, at one-dimensionally periodic T 1
  • the exposed surface is formed in a pattern corresponding to the slit 11 in the center of the convex surface 7b that is periodically repeated.
  • the width W 3 of the slit 11 is controlled to have various values depending on the pattern drawn in this step. Further, by dry etching the dielectric substrate 13 on which the pattern is drawn, the portion of the metal thin film 5 corresponding to the slit 11 is removed to form the slit 11 (part (j) in FIG. 3).
  • the resist 17 for electron beams is removed from the dielectric substrate 13 processed by dry etching using a solvent, and then a dielectric material is formed by capping so as to cover the metal thin film 5 on the dielectric substrate 13.
  • a dielectric substrate 3 in which the metal thin film 5 is embedded is formed (part (k) in FIG. 3).
  • FIG. 4 shows the incident light of TE polarized light having a polarization direction in the Y-axis direction, which is the forming direction of the concave surface 7a and the convex surface 7b, and the incident light of TM polarized light having a polarization direction (X-axis direction) perpendicular to the Y-axis direction.
  • the light transmission spectrum when the light is incident in the wavelength range of 400 to 1000 nm is shown.
  • the period T 1 400 nm
  • step D 1 30 nm
  • the filter element 1 when TM-polarized light is incident, the filter element 1 has a narrow-band transmission characteristic centered on a specific wavelength near 600 nm, and the peak transmittance is up to 0.6. It can be seen that when the light rises and TE-polarized light is incident, it has a characteristic of blocking the incident light in a wide wavelength band.
  • Figure 5 shows the light transmission spectra for TM polarized light in the case where only the period T 1 is varied at 20nm intervals in the range of 220 nm ⁇ 680 nm of the above structural parameters. From this calculation result, by changing the period T 1 , the transmission wavelength band changes in the range from ultraviolet to near infrared from 400 nm to 1000 nm corresponding to the period T 1 , and the peak transmittance is 0.5. It can be seen that it is maintained in the range of ⁇ 0.6. Based on these properties, the filter element 1 of the present embodiment is designed so that the period T 1 is in the range of 220 nm to 680 nm.
  • 6 and 7 show light transmission spectra related to TM polarization when only the film thickness of the metal thin film 5 among the above structural parameters is changed in the range of 5 to 100 nm. From this calculation result, it was found that the film thickness parameter affects the transmittance and the transmission wavelength bandwidth. Specifically, when the film thickness is changed to 10 nm, 20 nm, and 50 nm, a narrow transmission wavelength band is provided in the vicinity of 600 nm, and a transmittance value of about 0.4 to 0.6 is secured. To. On the other hand, if the film thickness is as thin as 5 m, the metal thin film 5 transmits light in a wide wavelength band, so that the transmitted wavelength bandwidth is widened.
  • the film thickness of the metal thin film 5 is designed in the range of 10 nm to 50 nm.
  • the slit width W 3 shows an optical transmission spectra for TM polarized light in the case where only the slit width W 3 is changed in the range of 0 ⁇ 50 nm of the above structural parameters. From this calculation result, the parameter of the slit width W 3 was also found to affect the transmittance and transmission wavelength band. Specifically, when the slit width W 3 is changed to 0 nm (without slit), 20 nm, and 30 nm, it has a narrow transmission wavelength band near 600 nm, and the transmittance is 0.4 to 0.7. The value of the degree is secured.
  • the slit width W 3 being from the viewpoint of narrowing the transmission wavelength is preferably in the range of 0 nm ⁇ 30 nm, in order to improve the narrowing and the light transmittance of the transmission wavelength slit width W 3 It is expected that the optimum value is around 20 nm. Based on these properties, the filter element 1 of the present embodiment is designed so that the slit width W 3 is in the range of 0 nm to 30 nm.
  • the parameter of the step D 1 also affect the transmittance and transmission wavelength band, it has been found to be particularly greatly affects the transmission wavelength band. Specifically, when the step D 1 20 nm, 40 nm, is changed from 70nm has a transmission wavelength band in the vicinity of 600 ⁇ 700 nm, transmittance is secured value of about 0.4-0.6 To. On the other hand, when the step D 1 is increased to 100 nm, the peak of the transmission wavelength band disappears and the transmission characteristic is generated on the long wavelength side.
  • the step D 1 is made as small as 10 nm, the light transmittance at the peak of the transmission wavelength is remarkably lowered.
  • FIG. 12 is a perspective view showing a part of the image sensor 100.
  • the image pickup device 100 is an element for acquiring a color image based on incident light from the outside, and is configured by arranging a plurality of pixels two-dimensionally.
  • FIG. 12 shows the structure of a part of the pixels of the image sensor 100.
  • a plurality of image pickup elements 100 are provided corresponding to the semiconductor substrate 103 in which the light receiving elements are two-dimensionally arranged and the main surface 105 of the semiconductor substrate 103 so as to face each other.
  • the filter element 1 of the above is provided.
  • the semiconductor substrate 103 has a plurality of pixel portions 103a, 103b, 103c, 103d divided into a rectangular shape along the main surface 105.
  • a light receiving element is formed inside each of the pixel portions 103a, 103b, 103c, and 103d, and detects light incident from the main surface 105 side to generate a pixel signal.
  • the plurality of filter elements 1 are provided so as to cover the plurality of pixel portions 103a to 103d on the main surface 105 of the semiconductor substrate 103. These plurality of filter elements 1 are designed so that the transmission wavelength bands are different from each other.
  • the image pickup device 100 is configured by two-dimensionally connecting a plurality of filter elements 1 and pixel portions 103a, 103b, 103c, 103d shown in FIG. 12 along the main surface 105.
  • the two-dimensionally connected filter elements 1 may be integrated with each other or may be separated members.
  • the two-dimensionally connected pixel portions 103a, 103b, 103c, and 103d may be integrated with each other as the semiconductor substrate 103, or may be a semiconductor substrate 103 separated from each other.
  • the two-dimensionally arranged filter element 1 and the two-dimensionally arranged pixel portions 103a, 103b, 103c, and 103d are used, respectively. It is preferable that they are integrated.
  • the filter element 1 of the present embodiment when light is incident on one surface 5a of the metal thin film 5 from the outside, polarization occurs on one surface 5a due to a periodic uneven structure, and surface plasmon resonance is excited. At the same time as being (coupling), this causes interference with one surface 5a on the other surface 5b, resulting in reverse polarity polarization and induction of surface plasmon resonance, which induces surface plasmon resonance. The resonance is converted into propagating light (decoupling) and emitted to the outside from the other surface 5b side. As described above, by having a structure capable of exciting surface plasmon resonance on both surfaces of the metal thin film 5, the light transmittance of the incident light can be improved.
  • the metal thin film 5 has a structure in which incident light in a specific wavelength band is subjected to As a result of being able to enhance the resonance of the surface plasmon generated on both sides, it is possible to realize a narrow band of the transmission wavelength of the incident light.
  • the light receiving element can receive light in a predetermined wavelength band narrowed by a high light transmittance, so that the wavelength selectivity is high and the sensitivity is high. The image sensor can be realized.
  • the metal thin film 5 has a period of a specific cycle so as to penetrate to the second surface structure on both the concave surface 7a and the convex surface 7b of the first surface structure. It further has a linear slit 11 formed in the shape of a metal. With such a configuration, the oscillating electric field of the incident light is concentrated in the slit 11, and polarization can be efficiently generated. As a result, the metal thin film 5 is separated by the slit 11, and as a result, the incident light causes The mode of polarization that occurs can also be stabilized. As a result, the filter element 1 can further improve the light transmittance and further narrow the transmission wavelength.
  • the concave surface 7a and the convex surface 7b are formed so as to extend linearly, and the slit 11 is formed along the extending direction of the concave surface 7a or the convex surface 7b. ing. With such a structure, it is possible to improve the light transmittance and narrow the transmission wavelength band for the incident light of linearly polarized light having a specific polarization direction.
  • the metal thin film 5 since the metal thin film 5 has a uniform film thickness, surface plasmon resonance can be stably excited on both surfaces of the metal thin film 5, and the light transmittance of incident light can be improved. Can be improved.
  • the period T 1 is set in the range of 220 nm to 680 nm
  • the film thickness of the metal thin film 5 is set in the range of 10 nm to 50 nm
  • the slit width W 3 is set. It is set in the range of 0 nm to 30 nm
  • the step D 1 is set in the range of 20 nm to 70 nm.
  • both interfaces of the metal thin film 5 can interfere with each other, and a narrow band and high light transmittance can be realized.
  • the slit width W 3 to a minute width in the range of 0 nm to 30 nm, surface plasmon resonance can be excited on both sides of the metal thin film 5 while preventing light transmission in a wavelength region other than the desired wavelength region. A narrow band and high light transmittance can be realized.
  • the present invention is not limited to the above-described embodiment.
  • the configuration may be changed to the following.
  • FIG. 13 is a side view showing a part of the filter element 1A according to the modified example.
  • the slits 11 provided on the concave surface 7a and the convex surface 7b are omitted. Even with such a structure, surface plasmon resonance can be excited on both surfaces of the metal thin film 5, the light transmittance of the incident light can be improved, and the transmission wavelength of the incident light can be narrowed. ..
  • the light transmission spectrum related to TM polarization when set to is shown. From this calculation result, by changing the period T 1 , the transmission wavelength band changes in the range from visible to near infrared from 400 nm to 1000 nm corresponding to the period T 1 , and the peak transmittance is 0.3. It can be seen that it is maintained in the range of ⁇ 0.4.
  • the filter element 1A of this modified example is also designed with a period T 1 in the range of 220 nm to 680 nm.
  • the slits 11 are provided on both the concave surface 7a and the convex surface 7b of the first surface structure, and the slits 11 may be provided on either one of them.
  • 15 and 16 are side views showing a part of the filter elements 1B and 1C according to the modified example.
  • the filter element 1B is provided with a slit 11 only on the concave surface 7a
  • the filter element 1C is provided with a slit only on the convex surface 7b.
  • the filter element 1B shows an optical transmission spectra for TM polarized light in the case where the period T 1 is set to 140nm of the structural parameters used for the calculation of the characteristic of FIG. From this calculation result, it can be seen that by setting the period T 1 , the transmission wavelength band can be set in the ultraviolet region of 400 nm, and in addition, the transmittance on the long wavelength side can be suppressed low.
  • FIG. 18 is a side view showing a part of the filter element 1D according to the modified example.
  • the filter element 1D has a structure in which one surface 5a is exposed to the outside and the other surface 5b is covered with a dielectric material in the metal thin film 5 as a difference from the filter element 1. According to such a configuration, incident light can be transmitted in the air between one surface 5a and the outside.
  • FIG. 19 shows the filter element 1D, shows the light transmission spectra for TM polarized light in the case where the period T 1 was changed at 40nm intervals in the range of 400 ⁇ 680 nm of the structure parameters used when calculating the characteristic of FIG. 4 There is. From this calculation result, by setting the period T 1, it can be set transmission wavelength band in the wavelength range of 400 nm ⁇ 700 nm, and it can be seen that maintained in the range of transmittance 0.2-0.3.
  • FIG. 20 is a side view showing a part of the filter element 1E according to the modified example.
  • the filter element 1E has a structure in which one surface 5a is exposed to the outside and the other surface 5b is covered with a dielectric material in the metal thin film 5 as a difference from the filter element 1A. According to such a configuration, incident light can be transmitted in the air between one surface 5a and the outside.
  • the light transmission spectrum related to TM polarization when set to is shown. From this calculation result, it can be seen that by setting the period T 1 , the transmission wavelength band can be set in the wavelength range of 400 nm to 700 nm, and the transmittance is also maintained at about 0.2.
  • first and second surface structures of the metal thin film 5 do not necessarily have to be formed so that the uneven surface and the slits extend linearly in the same direction over the entire surface, and are formed in a plurality of directions (for example, orthogonal to each other). It may be formed by refracting or intersecting so as to extend linearly along (two directions).
  • Part (a), part (b), part (c), and part (d) of FIG. 22 show a plan view of the metal thin films 5A, 5B, 5C, and 5D according to the modified example. In such a configuration of the metal thin films 5A, 5B, 5C, and 5D, linear uneven surfaces and linear slits are arranged periodically along two orthogonal directions.
  • Part (a) of FIG. 23 shows a form in which the uneven surfaces of the first and second surface structures of the metal thin film are formed so as to extend linearly in the same direction.
  • Part (b) represents a form in which slits are formed on each of the uneven surfaces of part (a).
  • Part (c) represents the intensity distribution of polarized light of transmitted light (plasmon) transmitted through the metal thin film of part (a) or part (b).
  • the intensity distribution of the transmitted light shows a polarization characteristic having a strong intensity in the direction perpendicular to the uneven surface, and it can be seen that the transmittance of the transmitted light is considerably reduced with respect to the incident light due to this polarization characteristic.
  • Part (a) of FIG. 24 represents a form in which the uneven surfaces of the first and second surface structures of the metal thin film are formed so as to extend linearly in two directions orthogonal to each other.
  • Part (b) represents a form in which slits are formed on each of the uneven surfaces of part (a).
  • Part (c) represents the intensity distribution of polarized light of transmitted light (plasmon) transmitted through the metal thin film of part (a) or part (b). It can be seen that the intensity distribution of the transmitted light has polarization intensities in two orthogonal directions, and the transmittance of the transmitted light is higher than that in FIG. 23 with respect to the incident light of random polarization.
  • Part (a) of FIG. 25 shows a form in which the uneven surfaces of the first and second surface structures of the metal thin film are formed by equilateral triangles having an angle of 60 degrees, respectively.
  • Part (b) represents a form in which slits are formed on each of the uneven surfaces of part (a) at an angle of 60 degrees.
  • Part (c) represents the intensity distribution of polarized light of transmitted light (plasmon) transmitted through the metal thin film of part (a) or part (b). It can be seen that the intensity distribution of the transmitted light has polarization intensities in three directions having an angle of 60 degrees, and the transmittance of the transmitted light is further increased with respect to the incident light of random polarization as compared with FIG. 24.
  • Part (a) of FIG. 26 represents a form in which the concave or convex surfaces of the first and second surface structures of the metal thin film are formed in a regular hexagonal shape having an angle of 120 degrees.
  • Part (b) represents a form in which slits are formed on each of the uneven surfaces of part (a) at an angle of 60 degrees.
  • Part (c) represents the intensity distribution of polarized light of transmitted light (plasmon) transmitted through the metal thin film of part (a) or part (b). It can be seen that the intensity distribution of the transmitted light has polarization intensities in three directions having an angle of 60 degrees, and the transmittance of the transmitted light is further increased with respect to the incident light of random polarization as compared with FIG. 24.

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un élément de filtre 1 comprenant un substrat diélectrique 3 qui est optiquement transmissif, et un film mince métallique 5 qui est formé le long d'une surface principale 3a du substrat diélectrique 3, le film mince métallique 5 étant supporté par le substrat diélectrique 3 de façon à permettre la transmission de la lumière entre l'extérieur, et une surface 5a et une autre surface 5b sur le côté opposé à la première surface 5a, étant formé de manière à être courbé, à des intervalles égaux dans une direction le long de la surface principale 3a du substrat diélectrique 3, dans une direction sensiblement perpendiculaire à ladite direction, et a une première structure de surface sur la première surface 5a et une seconde structure de surface sur l'autre surface 5b, ladite première structure de surface comprenant des surfaces en retrait 7a et des surfaces en saillie 7b qui sont formées périodiquement de manière alternée à une périodicité spécifique le long de ladite direction, et ladite seconde structure de surface comprenant des surfaces en retrait 9a et des surfaces en saillie 9b qui sont formées périodiquement d'une manière alternée à une périodicité spécifique le long de ladite direction.
PCT/JP2020/041324 2019-11-13 2020-11-05 Élément de filtre et élément d'imagerie comprenant celui-ci WO2021095625A1 (fr)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009239217A (ja) * 2008-03-28 2009-10-15 Nikon Corp 発光ダイオード素子
WO2012026211A1 (fr) * 2010-08-24 2012-03-01 日本電気株式会社 Source de lumière et dispositif d'affichage par projection
CN102798918A (zh) * 2011-05-25 2012-11-28 苏州大学 一种反射式彩色滤光片
US20140071532A1 (en) * 2010-12-16 2014-03-13 Suzhou University Color filter
JP2017040905A (ja) * 2015-08-20 2017-02-23 パナソニックＩｐマネジメント株式会社 発光装置
JP2018004694A (ja) * 2016-06-27 2018-01-11 国立大学法人静岡大学 光学素子、それを含む撮像素子、光学素子の製造方法、及び撮像素子の製造方法
JP2020034899A (ja) * 2018-08-27 2020-03-05 セー エス ウー エム・サントル・スイス・デレクトロニク・エ・ドゥ・ミクロテクニク・エス アー・ルシェルシュ・エ・デヴェロプマン 光学フィルタ、光学フィルタシステム、分光器及び光学フィルタの製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009239217A (ja) * 2008-03-28 2009-10-15 Nikon Corp 発光ダイオード素子
WO2012026211A1 (fr) * 2010-08-24 2012-03-01 日本電気株式会社 Source de lumière et dispositif d'affichage par projection
US20140071532A1 (en) * 2010-12-16 2014-03-13 Suzhou University Color filter
CN102798918A (zh) * 2011-05-25 2012-11-28 苏州大学 一种反射式彩色滤光片
JP2017040905A (ja) * 2015-08-20 2017-02-23 パナソニックＩｐマネジメント株式会社 発光装置
JP2018004694A (ja) * 2016-06-27 2018-01-11 国立大学法人静岡大学 光学素子、それを含む撮像素子、光学素子の製造方法、及び撮像素子の製造方法
JP2020034899A (ja) * 2018-08-27 2020-03-05 セー エス ウー エム・サントル・スイス・デレクトロニク・エ・ドゥ・ミクロテクニク・エス アー・ルシェルシュ・エ・デヴェロプマン 光学フィルタ、光学フィルタシステム、分光器及び光学フィルタの製造方法

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