WO2021095295A1 - Dispositif de formation de film - Google Patents

Dispositif de formation de film Download PDF

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Publication number
WO2021095295A1
WO2021095295A1 PCT/JP2020/024826 JP2020024826W WO2021095295A1 WO 2021095295 A1 WO2021095295 A1 WO 2021095295A1 JP 2020024826 W JP2020024826 W JP 2020024826W WO 2021095295 A1 WO2021095295 A1 WO 2021095295A1
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WIPO (PCT)
Prior art keywords
isolation
film forming
substrate holding
isolation means
holding means
Prior art date
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PCT/JP2020/024826
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English (en)
Japanese (ja)
Inventor
有広 塩田
青山　貴昭
光人 遠藤
亦周 長江
Original Assignee
株式会社シンクロン
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Application filed by 株式会社シンクロン filed Critical 株式会社シンクロン
Priority to JP2021555903A priority Critical patent/JP7108347B2/ja
Publication of WO2021095295A1 publication Critical patent/WO2021095295A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Definitions

  • the present application relates to a film forming apparatus for forming a thin film on a substrate by sputtering.
  • FIG. 1 is a schematic configuration diagram of a film forming processing region (deposition area) in a sputtering film forming apparatus. A film forming region and a reaction region are provided in the vacuum vessel of the film forming apparatus.
  • the target 4 made of metal is sputtered in an atmosphere of working gas, and plasma treatment is performed by accumulating sputtered particles and sputtering plasma to form an interlayer film.
  • the active substance of the electrically neutral reactive gas in the plasma generated in the atmosphere containing the reactive gas is brought into contact with the intermediate film of the moving substrate to react, and the intermediate film is completely reacted with the metal. Converts into a continuous ultra-thin film made of material.
  • an isolation cover (Shield) is usually provided on the inner wall surface of the vacuum vessel in order to spatially and pressure-separate the reaction region and the film-forming region, respectively.
  • the reaction region and the film-forming region are both relatively independent inside the vacuum vessel by providing isolation covers.
  • the vacuum vessel is provided with different film forming regions, and two different kinds of substances may be sputtered.
  • the isolation cover isolates the area inside the vacuum vessel (between the reaction area and the film formation area, or between different film formation areas), maintaining independent operation between each step and between different steps.
  • the isolation cover By using the isolation cover, it is possible to suppress an increase in scattering of the thin film by preventing sputter particles traveling straight by the isolation cover from being mixed into the thin film as an oblique incident component.
  • the quality of the thin film is deteriorated because the element particles from the isolation cover are easily doped into the thin film formed by the conventional film forming apparatus.
  • the conventional isolation cover is welded to the vacuum vessel, and the isolation cover cannot be replaced during the film formation process of different lots.
  • the element particles of the cover itself are released and easily enter the thin film, impurities are mixed in the thin film, and the quality of the thin film is deteriorated.
  • the elemental particles from the isolation cover also affect the normal film formation of the thin film element, forming an abnormal film formation phenomenon in the film formation process, and lowering the quality of the thin film.
  • the present invention can solve the above problems with the following configurations.
  • the film forming apparatus according to the present invention is With a vacuum container A substrate holding means capable of rotating around an axis and holding a plurality of substrates, A film-forming region located inside the vacuum vessel, which can reach the substrate by discharging sputter ions from the target by sputtering.
  • a detachably mounted isolation means in the vacuum vessel that separates the film formation region from other regions in the vacuum vessel.
  • the isolation means may be detachably attached to the inner side wall of the vacuum container.
  • the isolation means extends from the inner side wall of the vacuum vessel toward the substrate holding means, and the extending direction of the isolation means is configured to be parallel to the axial direction of the substrate holding means. It's okay.
  • the isolation means includes two isolation covers provided so as to face each other, and the film-forming region is located between the two isolation covers.
  • the isolation means is provided so that the substrate holding means is attached and detached when it is carried in or out of the vacuum container.
  • the present invention further includes a transport mechanism for transporting the substrate holding means, and the isolation means is transported so that the substrate holding means is attached and detached when the substrate holding means is carried in or out of the vacuum container. The mechanism may be configured to cooperate with the isolation means.
  • the transport mechanism may be configured to raise and lower the isolation means so as to attach and detach the isolation means. Further, in the present invention, the transport mechanism maintains a connection with the isolation means when the isolation means is carried into the vacuum container, and is separated from the isolation means when the isolation means is attached to the side wall of the vacuum container. It may be configured in. Further, in the present invention, the transport mechanism includes an operation station that can be raised and lowered, the operation station is used for mounting the substrate holding means and the isolation means, and the isolation means is mounted on the operation station. In this state, it may be configured to move together with the transport mechanism.
  • the isolation cover is provided with a locking member
  • a support member that engages with the locking member is provided on the side wall of the vacuum container, and the locking member is locked to the support member. From the state, the locking member may be configured to move upward to separate from the support member.
  • the operation station is provided with an insertion slot into which the isolation means is inserted along the extending direction. Further, in the present invention, the insertion slot may be provided close to the peripheral edge of the operation station.
  • a separating means for separating the film forming region and another region in the vacuum vessel is provided, and the separating means is detachably attached to the inner wall of the vacuum vessel so that the thin film of the lot is removed from the vacuum vessel after being formed.
  • the new isolation means can be replaced when the next lot of substrate needs to be deposited. As a result, it is possible to prevent the isolation means from releasing its own elemental particles in the process of sputtering film formation, and it is possible to improve the quality of the thin film.
  • embodiments of the present invention include many modifications, modifications and equivalents.
  • FIG. 2 is a schematic view with the shield cover mounted. It is a schematic diagram in the state of the mounting end of FIG. It is a schematic diagram of the support means of FIG.
  • This embodiment is a vacuum vessel 1, a substrate holding means 2 that rotates around a vertical axis and can hold a plurality of substrates, and a film forming region located inside the vacuum vessel, and is a target 4 by sputtering.
  • a film-forming region that can reach the substrate by emitting sputter ions from the vacuum vessel 1 and a detachable isolation means that separates the film-forming region from other regions in the vacuum vessel 1 are included.
  • an isolation means for separating the film forming region and another region in the vacuum vessel 1 is provided, and the isolation means is detachably attached to the inner wall of the vacuum vessel 1 to hold the substrate after the formation of the thin film of the lot.
  • the isolation means is carried out together with the means 2 from the vacuum vessel 1, the new isolation means is replaced when the film formation of the substrate of the next lot is required, and the new isolation means is used in the film formation process of the substrate of the lot.
  • the film forming apparatus may be further provided with a reaction region, a cathode electrode, a sputtering power source, and a plasma generating means.
  • the reaction region is formed in the vacuum vessel 1 and is arranged so as to be spatially separated from the film-forming region.
  • the film forming region and the reaction region are arranged upstream and downstream in the moving direction of the substrate holding means 2. Since the movement of the substrate holding means 2 is usually considered to be circulation or reciprocating, the specific upstream / downstream arrangement order of the film formation region and the reaction region is not particularly limited in this embodiment.
  • the target 4 is mounted on the cathode electrode, the sputtering power is turned on, the plasma generating means is operated, and the substrate is held in a state where a plurality of substrates are held on the outer peripheral surface of the substrate holding means 2.
  • the sputter particles emitted from the target 4 reach the substrate that has moved to the thin film region and are deposited, and the ions in the sputter plasma are made to collide with the substrate and the deposit of the sputter particles.
  • This ultra-thin film may be configured to be laminated in a plurality of layers to form a thin film.
  • the film forming apparatus may further include a driving means (not shown).
  • the driving means rotates the substrate holding means 2 and rotates the substrate holding means 2 by the driving means to repeatedly move the substrate between a predetermined position in the film forming region and a predetermined position in the reaction region. be able to.
  • the film-forming region is a region where the sputtered particles emitted from the target 4 by the sputtered plasma reach, and the reaction region is a region exposed to plasma other than the sputtered plasma.
  • the "movement” referred to in the above invention includes a linear movement as well as a curved movement (for example, a circumferential movement). Therefore, "moving the substrate from the film forming region to the reaction region” includes not only a form of revolving around a certain central axis but also a form of reciprocating on a straight orbit connecting two points.
  • the "rotation” in the above embodiment includes not only rotation but also revolution. Therefore, when it is simply called “rotating around a central axis", it includes a form of rotating around a certain central axis and a form of revolving.
  • the "intermediate film” in the above embodiment means a film formed through the film formation region.
  • thin film means an ultra-thin film that is deposited many times to become the final thin film, so "ultra-thin film” is a term used so as not to be confused with this "thin film”. , Means sufficiently thinner than the final "thin film”.
  • the vacuum container 1 is the main body of the container in which the transport mechanism can be stored.
  • the main body with the chamber is a side wall extending in the vertical direction (the vertical direction of the paper surface in FIG. 3; the same applies hereinafter) in the plane direction (direction perpendicular to the vertical direction.
  • Vertical and horizontal directions in FIGS. 2 and 4 and FIG. 3 It is configured to go around the vertical paper surface direction of (the same applies hereinafter).
  • the cross section of the main body with a chamber in the plane direction is formed into a rectangular shape, but other shapes (for example, circular shape) may be used, and the present invention is not particularly limited.
  • the vacuum vessel 1 can be made of, for example, a metal such as stainless steel.
  • a hole for passing the shaft may be formed above the vacuum vessel 1, and the vacuum vessel 1 can be electrically grounded to a ground potential.
  • the driving means can be driven so as to rotate the substrate holding means 2 by driving the shaft so as to rotate, and the substrate holding means 2 can be driven so as to rotate about the shaft.
  • the substrate can be moved by switching between the film formation region and the reaction region.
  • the driving means may be a motor.
  • the shaft is formed of a substantially tubular member, and is rotatably supported with respect to the vacuum vessel 1 via an insulating member (not shown) arranged in a hole formed above the vacuum vessel 1. Has been done. Since the shaft is supported by the vacuum vessel 1 via an insulating member made of an insulator, resin, or the like, the shaft can rotate with respect to the vacuum vessel 1 in a state of being electrically insulated from the vacuum vessel 1.
  • a first gear (not shown) that meshes with a second gear (not shown) on the output side of the motor is firmly attached to the upper end side located outside the vacuum vessel 1 of the shaft. Therefore, by driving the motor, the rotational driving force is transmitted to the first gear via the second gear, thereby rotating the shaft.
  • a tubular rotating body (rotating drum) is firmly attached to the lower end portion of the shaft located inside the vacuum vessel 1.
  • the rotary drum is arranged in the vacuum vessel 1 so that the axis Z extending in the cylindrical direction faces the vertical direction of the vacuum vessel 1.
  • the rotating drum is formed in a cylindrical shape, but the shape is not limited to this, and the cross section may be a polygonal columnar shape or a conical shape.
  • the rotating drum is the rotation of the shaft realized by driving the motor, and rotates around the axis Z.
  • the substrate holding means 2 is mounted on the outside (outer circumference) of the rotating drum.
  • a plurality of substrate holding portions are provided on the outer peripheral surface of the substrate holding means 2, and a plurality of substrates to be filmed by the substrate holding portion are mounted on the back surface (the film forming surface). Can be supported from the opposite side).
  • the axis of the substrate holding means 2 coincides with the axis Z of the rotating drum. Therefore, by rotating the rotating drum around the axis Z, the substrate holding means 2 is integrated with the rotating drum and rotates about the axis Z of the drum in synchronization with the rotation of the rotating drum.
  • the exhaust mechanism may include a vacuum pump.
  • the exhaust pipe is connected to the vacuum container 1.
  • a vacuum pump for exhausting the inside of the vacuum vessel 1 is connected to a pipe, and the degree of vacuum in the vacuum vessel 1 can be adjusted by the vacuum pump and a controller (not shown).
  • the vacuum pump may be composed of, for example, a rotary pump, a turbo molecular pump (TMP), or the like.
  • a sputtering source and a plasma source (a specific example of the plasma generating means) are arranged around the substrate holding means 2 arranged in the vacuum vessel 1. In the present embodiment shown in FIG. 1, two sputtering sources and one plasma source are arranged, but in the present embodiment, at least one sputtering source is sufficient, and the film formation described later is based on this. There may be at least one region.
  • a film forming region is formed on the front surface of each sputter source.
  • a reaction region is formed in front of the plasma source.
  • the film-forming region is formed on the inner wall surface of the vacuum vessel 1, the isolation means, the outer peripheral surface of the substrate holding means 2, and the region surrounded by the front surface of each sputtering source, so that the film-forming region is formed.
  • the regions are spatially and pressure-separated inside the vacuum vessel 1 to secure spaces independent of each other.
  • two pairs of magnetrons may be provided to sputter the electrodes.
  • the reaction region is also a region surrounded by the inner wall surface of the vacuum vessel 1, the partition wall protruding from the inner wall surface to the substrate holding means 2, the outer peripheral surface of the substrate holding means 2, and the front surface of the plasma source.
  • the reaction region is also spatially and pressure-separated from the film-forming region inside the vacuum vessel 1 by being formed in, and an independent space is secured.
  • the processing in each area can be controlled independently.
  • the isolation means is detachably attached to the vacuum container 1.
  • the isolation means is detachably attached to the inner wall of the vacuum container 1.
  • the inner wall of the vacuum vessel 1 may be an inner wall surface between the top and bottom of the vacuum vessel 1 (may be understood as the inner wall surface described above).
  • the present embodiment does not exclude the situation where the isolation means is detachably connected to the top and / or bottom of the vacuum vessel 1 and fixed in the vacuum vessel 1.
  • the isolation means may also be detachably installed in the vacuum container 1.
  • a certain bracket is attached to the shaft, and the bracket and the shaft can be connected via a bearing, and the bracket is evacuated.
  • the isolation means may be detachably attached to the bracket so that it is stationary with respect to the container 1 so as not to affect the rotation of the shaft.
  • the bracket may be attached to the inner side wall of the vacuum container 1 so that the isolation means can be attached.
  • the isolation means can be detachably attached to the vacuum vessel 1, and in actual manufacturing installation, the isolation means can be freely installed according to the actual situation. It can be seen that it suffices if it can be separated (or separated), and it can be removed and replaced as desired.
  • the isolation means is provided so as to surround the periphery of the film formation region in order to form the film formation region in a closed space, and the isolation means is provided between the substrate holding means 2 and the inner wall of the vacuum vessel 1.
  • the isolation means In position. As shown in FIG. 1, in the isolation means, one end (or one side) away from the inner wall of the vacuum vessel 1 is close to the substrate in the substrate holding means 2, but there is a certain gap between the isolation means and the substrate. Avoid interfering with the reciprocating movement of the substrate by the substrate holding means 2. Therefore, the closed space in which the film-forming region is located may be relatively sealed and spatially and pressure-wise separated from other regions.
  • the isolation means may extend from the inner wall of the vacuum vessel 1 toward the substrate holding means 2, and exemplary, the isolation means may extend along a straight line or along a curve. Good.
  • the isolation means may extend diagonally between the substrate holding means 2 and the inner wall of the vacuum vessel 1, for example, in FIGS. 2 to 4, the extending direction of the separating means and the vertical direction of the paper surface. It may have an angle greater than 0 degrees and less than 90 degrees with (longitudinal direction).
  • the isolation means may extend linearly from the inner side wall of the vacuum vessel 1 to the substrate holding means 2.
  • the cross section of the isolation means in the horizontal plane is substantially elongated as shown in FIGS. 2 to 4, and there is a straight line parallel to the longitudinal direction of the elongated cross section.
  • the extending direction from the inner side wall of the vacuum container 1 of the isolation means to the substrate holding means 2 and the vertical direction of the paper surface may be parallel and have a certain angle. You may.
  • the isolation means is preferably perpendicular to the inner wall or inner wall of the vacuum vessel 1 in which it is located. At this time, as shown in FIGS.
  • the extending direction from the inner wall of the vacuum container 1 to the substrate holding means 2 is parallel to the vertical direction of the paper surface.
  • the isolation means has a long structure, and specifically, the longitudinal direction of the isolation means is parallel to the axial direction of the substrate holding means 2.
  • the isolation means may include two isolation covers 3 provided opposite to each other.
  • the isolation cover 3 is also called a spacer, a isolation plate, a shield plate, a spacing plate, or a shielding cover.
  • the film formation region is located between the two isolation covers 3.
  • the isolation cover 3 may be composed of a single member, or may be formed by assembling a plurality of members.
  • the isolation cover 3 may be a rectangular plate, or the isolation cover 3 may be formed by arranging a plurality of shielding plates.
  • the isolation means has another isolation portion, and the upper end and the lower end of the two isolation covers 3 are both isolation plates (or striped isolation structures, also the isolation means).
  • a part can be connected to form a "mouth" -shaped structure isolation means, in which the isolation means surrounds the film formation region to separate the film formation region from another region in the vacuum vessel 1.
  • the striped isolation structure may be similarly arranged so as to communicate between the film-forming region and the outside of the film-forming region, and the present invention is not specifically limited.
  • the isolation means includes two isolation covers 3 (shields) provided opposite to each other.
  • the film formation region is located between the two isolation covers 3.
  • the isolation cover 3 has a rectangular plate structure, and the isolation cover 3 is also called a shield plate accordingly.
  • the isolation means is provided so as to be attached and detached when the substrate holding means 2 is carried in or out of the vacuum container 1. There is. Thereby, the formation quality of the thin film can be improved.
  • the substrate and the isolation cover 3 can be easily replaced together.
  • the "lot" of the present application can be understood as a plurality of substrates simultaneously formed on the substrate holding means 2, and the plurality of substrates are simultaneously loaded and unloaded (conveyed and taken out). Since the isolation means is detachably attached to the vacuum vessel 1, it can be replaced at a desired timing and does not need to be associated with the lot of the substrate. Further, since the isolation means is detachably attached to the vacuum container 1, the convenience of operation and maintenance of the isolation means is improved.
  • the film forming apparatus may include a transport mechanism 5 for transporting the substrate holding means 2.
  • the transport mechanism 5 cooperates with the isolation means so that the isolation means and the substrate holding means 2 are attached and detached when they are carried in or out of the vacuum container 1.
  • the load chamber may be connected to the vacuum container 1.
  • the board holding means 2 performs the work of attaching and detaching the board in the loading chamber.
  • the substrate holding means 2 closes the loading chamber and exhausts the gas so as to be in a vacuum state.
  • the vacuum container 1 is opened, and the transfer mechanism 5 conveys the substrate holding means 2 from the load chamber to the vacuum container 1.
  • the transport mechanism 5 may load (convey) the isolation means together when loading the substrate in the load chamber.
  • the transport mechanism 5 enters the vacuum container 1 and hangs the isolation means on the inner wall of the vacuum container 1, then moves and is positioned at the operating position.
  • the transport mechanism 5 transports the substrate holding means 2.
  • the transport mechanism 5 unloads (takes out) the isolation means from the vacuum vessel 1.
  • the operation of the transport mechanism 5 to unload the isolation means is opposite to the operation of loading the isolation means.
  • the transport mechanism 5 maintains the connection with the isolation means when the isolation means is carried into the vacuum container 1, and is separated from the isolation means when the isolation means is attached to the side wall of the vacuum container 1. .
  • the connection between the transfer mechanism 5 and the isolation means can be controlled, and the connection / disconnection between the isolation means and the transfer mechanism 5 can be realized by a predetermined operation.
  • the transport mechanism 5 includes an operation station 10 that can be raised and lowered.
  • the operation station 10 is used to mount the substrate holding means 2 and the isolation means.
  • the isolation means moves together with the transport mechanism 5 while being mounted on the operation station 10.
  • the operation station 10 attaches / detaches the isolation means to / from the inner wall of the vacuum vessel 1 by a translational motion.
  • the transport mechanism 5 can raise and lower the isolation means so as to attach and detach the isolation means.
  • the transport mechanism 5 is provided with a hydraulic cylinder 11, and the transport mechanism 5 may be raised and lowered by expanding and contracting the hydraulic cylinder 11.
  • the transport mechanism 5 may include an operation station 10, a hydraulic cylinder 11, and a base 12.
  • the base 12 can be moved horizontally by interlocking the chains 13.
  • the hydraulic cylinder 11 is located on the base 12 and supports the operation station 10.
  • the surface of the operating station 10 is used to support the substrate holding means 2 and the isolation means.
  • the isolation cover 3 includes a locking member 6.
  • the locking member 6 may be attached to the narrow side of the isolation cover 3.
  • the locking member 6 may be welded to the side side of the isolation cover 3, and the locking member 6 and the isolation cover 3 may have an integral structure.
  • a support member 7 that engages with the locking member 6 is provided on the side wall of the vacuum container 1. From the state in which the locking member 6 is locked to the support member 7, the locking member 6 can be separated from the support member 7 by moving upward.
  • the locking member 6 may have a hook structure (locking hook).
  • the support member 7 also has a hook structure (support hook).
  • An insertion gap is formed between the support hook and the inner wall of the vacuum vessel 1, and a locking hook is inserted into the insertion gap to fill the space between the support hook and the inner wall of the vacuum vessel 1.
  • the isolation cover 3 may be provided with a plurality of locking members 6 along the longitudinal direction. Accordingly, a plurality of support members 7 that fit the plurality of locking members 6 may be provided on the inner wall of the vacuum container 1.
  • the plurality of support members 7 and the locking member 6 can correspond one-to-one. Further, by locking different support members 7, it is possible to adjust the height of the isolation cover 3 in the vertical direction, but the present application is not limited to this.
  • the operation station 10 is provided with an insertion slot 8 into which the isolation means is inserted along the extending direction of the isolation means.
  • An insertion portion 9 to be inserted into the insertion slot 8 is provided at the lower end of the isolation cover 3.
  • the isolation cover 3 is inserted into the slot 8 and can hold the vertical direction.
  • the insertion slot 8 is located on the front side of the substrate holding means 2 along the carry-in direction of the substrate holding means 2.
  • the insertion slot 8 is provided close to the peripheral edge of the operation stage 10.
  • the shape of the insertion slot 8 may match the shape of the insertion portion 9 of the isolation cover 3. As shown in FIG. 5, the shape of the insertion slot 8 is rectangular.
  • the transport mechanism 5 of the present embodiment is not limited to the locking member 6 and the support member 7 in order to attach / detach the isolation cover 3.
  • the transport mechanism 5 may be provided with an electronically controlled gripping mechanism. It is possible to release and grip the spacer at a desired timing by electronic control. This completes the attachment / detachment of the isolation cover 3.
  • the transport mechanism 5 mounts a rotating drum (board holding means 2), and the worker inserts two new isolation covers 3 into the insertion slots 8 on the operation stage 10 to provide two new isolations. Complete the installation of the cover 3.
  • the worker attaches the substrate on which the plurality of films are formed to the substrate holding means 2 on the rotating drum.
  • the load chamber is closed and evacuated.
  • the vacuum vessel 1 is opened and the transfer mechanism 5 is driven by the chain 13 so that the base 12 causes the operation stage 10 to enter the film forming chamber inside the vacuum vessel 1 (see FIG. 2).
  • the hydraulic cylinder 11 of the transport mechanism 5 pushes up the operation stage 10, and the locking member 6 of the isolation cover 3 is the support 7 on the inner wall of the vacuum vessel 1. Raise until higher (see Figure 3). Then, the transport mechanism 5 continues to move close to the inner wall of the vacuum vessel 1 until the locking member 6 positions the insertion slot between the support 7 and the inner wall of the vacuum vessel 1 below.
  • the operation stage 10 is driven so that the hydraulic cylinder 11 shortens and moves downward.
  • the locking member 6 is inserted into the support 7 to complete the locking of the isolation cover 3.
  • the operation stage 10 continues to move downward, and the isolation cover 3 is displaced by the support 7 to disengage from the insertion slot 8 in the operation stage 10 and complete the detachment from the operation stage 10 (see FIG. 4). .. After that, the transport mechanism 5 transports the substrate holding means 2 to a predetermined position, and the mounting of the substrate holding means 2 is completed.
  • the rotation of the substrate holding means 2 is stopped.
  • the load chamber is evacuated, the vacuum vessel 1 is opened, and the film forming chamber and the load chamber are communicated with each other.
  • the rotating drum (board holding means 2) is placed and moved by the transport mechanism 5.
  • the transport mechanism 5 mounts the substrate holding means 2 and moves close to the inner wall of the vacuum vessel 1 until the insertion slot 8 is located directly below the isolation cover 3 (insertion portion 9).
  • the hydraulic cylinder 11 of the transport mechanism 5 supports the operation table 10 and moves upward.
  • the isolation cover 3 is attached to the transport mechanism 5 by being inserted into the insertion portion 9 of the isolation cover 3 in the process of moving the insertion slot 8 in the operation stage 10 upward.
  • the operation stage 10 of the transport mechanism 5 continues to rise due to the push of the hydraulic cylinder 11, and pushes both the locking member 6 and the support 7 until they are disengaged.
  • the transport mechanism 5 separated the base 12 from the vacuum vessel 1 via the chain 13 (a film formation region was formed).
  • the locking member 6 and the support 7 are driven so as to move toward the inner wall until they are vertically separated from each other.
  • the transport mechanism 5 lowers the operation stage 10 to a predetermined height by shortening the hydraulic cylinder 11, and finally, the operation stage 10 places the substrate holding means 2 and the isolation cover 3 and enters the load chamber. After closing the vacuum vessel 1, the load chamber is opened to remove the substrate of the lot for which plating has been completed, and at the same time, a new isolation cover 3 is replaced.
  • the transport mechanism 5 in the above embodiment realizes the attachment / detachment of the isolation cover 3 in a translational manner.
  • the transfer mechanism 5 is not limited to the translational system, and may be a plurality of operation modes such as rotation, rocking, and electronic control, or a combination of different operation modes, but the present application is not limited to one. Any numerical value quoted in the text includes all the lower and upper values that increase in one unit from the lower limit to the upper limit, and is between any lower value and any upper value. Should be spaced by at least two units.

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Abstract

La présente invention concerne un dispositif de formation de film comprenant : une enceinte sous vide ; un moyen de support de substrat qui peut tourner autour d'une ligne d'axe et peut porter une pluralité de substrats ; une région de formation de film qui est située dans l'intérieur de l'enceinte sous vide et peut rendre possible de libérer des ions de pulvérisation cathodique à partir d'une cible par pulvérisation cathodique pour permettre aux ions de pulvérisation cathodique d'atteindre les substrats ; et un moyen de séparation qui peut séparer la région de formation de film par rapport à l'autre région dans l'enceinte sous vide et est fixé de manière amovible à l'intérieur de l'enceinte sous vide. La qualité de formation de film peut être améliorée par le dispositif de formation de film fourni par la présente invention.
PCT/JP2020/024826 2019-11-11 2020-06-24 Dispositif de formation de film WO2021095295A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021555903A JP7108347B2 (ja) 2019-11-11 2020-06-24 成膜装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201911094854.XA CN112779507B (zh) 2019-11-11 2019-11-11 成膜装置
CN201911094854.X 2019-11-11

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CN115386853A (zh) * 2022-08-16 2022-11-25 深圳市瑞泓塑胶五金镀膜技术有限公司 一种用于五金加工的镀膜速率可调节镀膜装置

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WO2012053171A1 (fr) * 2010-10-20 2012-04-26 株式会社アルバック Appareil de traitement sous vide
JP2014222693A (ja) * 2013-05-13 2014-11-27 大陽日酸株式会社 気相成長装置および気相成長装置の部材搬送方法

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JP2018090867A (ja) 2016-12-06 2018-06-14 東京エレクトロン株式会社 基板上に膜を形成する方法、及び、成膜システム
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JPH06136517A (ja) * 1992-10-26 1994-05-17 Sony Corp 薄膜形成方法及びその装置
WO2012053171A1 (fr) * 2010-10-20 2012-04-26 株式会社アルバック Appareil de traitement sous vide
JP2014222693A (ja) * 2013-05-13 2014-11-27 大陽日酸株式会社 気相成長装置および気相成長装置の部材搬送方法

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