WO2021079782A1 - Dispositif isolé de transmission - Google Patents

Dispositif isolé de transmission Download PDF

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Publication number
WO2021079782A1
WO2021079782A1 PCT/JP2020/038557 JP2020038557W WO2021079782A1 WO 2021079782 A1 WO2021079782 A1 WO 2021079782A1 JP 2020038557 W JP2020038557 W JP 2020038557W WO 2021079782 A1 WO2021079782 A1 WO 2021079782A1
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WIPO (PCT)
Prior art keywords
transmission device
insulated transmission
resonator
multilayer film
dielectric multilayer
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PCT/JP2020/038557
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English (en)
Japanese (ja)
Inventor
成伯 崔
榎本　真悟
昇 根来
田畑　修
雄太 永冨
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パナソニックＩｐマネジメント株式会社
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Publication of WO2021079782A1 publication Critical patent/WO2021079782A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/05—Circuit arrangements or systems for wireless supply or distribution of electric power using capacitive coupling
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/70—Circuit arrangements or systems for wireless supply or distribution of electric power involving the reduction of electric, magnetic or electromagnetic leakage fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/40—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by components specially adapted for near-field transmission
    • H04B5/48—Transceivers

Definitions

  • the present disclosure relates to an insulated transmission device using an electromagnetic resonance coupler.
  • An example of such an application is a gate drive circuit of a power device that switches a voltage on the order of several hundred volts to several kV.
  • the primary side of the several V system used in the gate drive circuit and the secondary side that handles power of several hundred V or more are electrically cut off to secure the insulation between the primary side and the secondary side.
  • it is also required to block the influence of noise generated when switching the large power on the secondary side.
  • insulated gate drivers Elements used in gate drive circuits that ensure insulation in this way are generally called insulated gate drivers, and are the main application examples of insulated signal / power transmission devices, which is the technical field of the present application.
  • insulated gate drivers There are several methods for insulated gate drivers, but the most commonly used method is an insulated transmission method using light called a photocoupler.
  • Photocouplers are widely used because they can easily achieve electrical insulation by light, can relatively increase the insulation distance, and are low in cost.
  • the primary side frame on which the LED transmitter is mounted and the secondary side frame on which the light receiver is mounted are insulated by the sealing material of the package, and the distance between them is 0.4 mm or more. It is possible to design.
  • photocouplers While photocouplers have the characteristic of being able to increase the insulation distance, they also have problems such as deterioration over time and the possibility of isolated transmission of signals only, making it difficult to transmit power.
  • Such a method using inductive coupling or capacitive coupling does not have a problem of aging deterioration of an optical element like a photocoupler, has a long life, and in an inductive coupling method, not only a signal but also power can be transmitted. Insulated transmission devices of body type have also been reported, and it is possible to realize miniaturization of an insulated gate driver.
  • the insulation distance of inductive coupling and capacitive coupling methods is generally as small as several tens of ⁇ m. It is a difficult method to secure an insulation distance of 0.4 mm or more that meets the above-mentioned reinforced insulation specifications, and in order to increase the insulation distance, the size of the coil and capacitor must be increased, which is a characteristic of the small size. Cannot maintain the conversion.
  • the insulation distance is set to 0 by configuring an insulated transmission device by an electromagnetic field resonance coupling method using a high frequency (GHz band, for example, 2.4 GHz) signal. It is disclosed that a highly efficient and compact insulated transmission IC structure can be realized while having a size of .4 mm or more.
  • GHz band for example, 2.4 GHz
  • the coupler is separated into two parts, an LED transmitter and a receiver, and each element is mounted on the primary side lead frame and the secondary side lead frame, and the transmitting side and the receiving side seal the package. It is completely electrically separated by a waterproof resin material (including a resin material for maintaining light transmission).
  • the coupler is an integrated type. That is, the coupler is composed of a laminated structure of dielectric layers in which the electrode structure is patterned by a printed circuit board (PCB), and insulation is maintained by a part of the layer thickness.
  • PCB printed circuit board
  • the coupler is mounted on either the primary side lead frame or the secondary side lead frame, and the frame that is not mounted is It is generally electrically connected by wire bonding.
  • the integrated coupler is mounted so as to straddle both lead frames.
  • the reliability is evaluated while changing the temperature / humidity conditions multiple times by a temperature cycle test or the like, but there is a concern that problems may remain in such a test.
  • Patent Document 2 discloses the structure of an insulated transmission device in which the primary side and the secondary side are completely separated by using an inductive coupling method.
  • the package size and the size of the IC structure depend on the coil shape.
  • Patent Document 2 as shown in FIG. 2 of Patent Document 2, the coil on the primary side and the coil on the secondary side are provided in the direction perpendicular to the substrate on which the insulated transmission device IC is mounted (hereinafter, in the vertical direction). It discloses a structure in which they are arranged facing each other, inductively coupled, and each is connected to each frame.
  • the structure is such that the primary and secondary coils face each other in the vertical direction, and each coil cannot be mounted on the same surface of the primary and secondary lead frames.
  • the package structure becomes complicated, the assembly method becomes sophisticated, and there is a concern that the cost will increase.
  • Patent Document 3 discloses a lateral coupling using a transformer, as shown in FIG. 11 of Patent Document 3. In this case, inductive coupling is realized by using a flexible substrate.
  • the present disclosure provides an insulated transmission device having high insulation reliability for a long period of time and suitable for miniaturization, high efficiency, and low cost.
  • the insulated transmission device includes a first dielectric multilayer film composed of a plurality of dielectric layers and a second dielectric multilayer film composed of a plurality of dielectric layers.
  • the first resonator provided on the first dielectric multilayer film and the second resonator provided on the second dielectric multilayer film are provided, and the first resonator and the above-mentioned
  • the second resonator is electrically insulated from the DC current, and an electromagnetic wave within a predetermined frequency band is transmitted between the first resonator and the second resonator.
  • the first resonator has a first inducing element and a first electrode constituting a capacitive element
  • the second resonator has a second inducing element and the said. It has a second electrode that constitutes a capacitive element.
  • the insulated transmission device of the present disclosure has high insulation reliability for a long period of time, and is suitable for miniaturization, high efficiency, and low cost.
  • FIG. 1 is a block diagram showing a system configuration example of the insulated transmission device of the first embodiment.
  • FIG. 2A is a bird's-eye view showing a structural example of the electromagnetic field resonance coupling portion of the first embodiment.
  • FIG. 2B is a cross-sectional view showing a structural example of the electromagnetic field resonance coupling portion of the first embodiment.
  • FIG. 2C is a perspective view of the first resonator of the first embodiment as viewed from above.
  • FIG. 2D is a perspective view of the first resonator of the first embodiment as viewed from below.
  • FIG. 3A is a bird's-eye view showing an example of the package structure of the first embodiment.
  • FIG. 3B is a side perspective view showing an example of the package structure of the first embodiment.
  • FIG. 4A is a bird's-eye view showing a conventional package structure.
  • FIG. 4B is a cross-sectional view showing a conventional electromagnetic field resonance coupler.
  • FIG. 5A is a diagram showing a first modification of the inductively coupled element.
  • FIG. 5B is a diagram showing a second modification of the inductively coupled element.
  • FIG. 5C is a diagram showing a third modification of the inductively coupled element.
  • FIG. 6A is a bird's-eye view showing a first modification of the resonator of the first embodiment.
  • FIG. 6B is a cross-sectional view showing a first modification of the resonator of the first embodiment.
  • FIG. 6C is a bird's-eye view showing a second modification of the resonator of the first embodiment.
  • FIG. 6D is a bird's-eye view showing a third modification of the resonator of the first embodiment.
  • FIG. 7 is a bird's-eye view showing a fourth modification of the resonator of the first embodiment.
  • FIG. 8A is a bird's-eye view showing a fifth modification of the resonator of the first embodiment.
  • FIG. 8B is a bird's-eye view showing a fifth modification of the resonator of the first embodiment.
  • FIG. 9A is a Smith chart showing actually measured values of the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 9B is a diagram showing the characteristics of the amount of reflection with respect to the frequency in the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 9C is a diagram showing the characteristics of the amount of transmission with respect to the frequency in the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 9D is a diagram showing an example of design parameters of the resonator according to FIGS. 9A to 9C.
  • FIG. 10A is a diagram showing an electric field distribution of the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 10B is a diagram showing a magnetic field distribution of the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 11A is a diagram showing a first example of an equivalent circuit of the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 11B is a diagram showing a second example of the equivalent circuit of the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 11C is a diagram showing a third example of the equivalent circuit of the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 11D is a diagram showing a fourth example of the equivalent circuit of the electromagnetic field resonance coupling portion according to the first embodiment.
  • FIG. 12A is a bird's-eye view showing a modified example of the resonator of the first embodiment.
  • 12B is a perspective view of the resonator of FIG. 12A as viewed from the side.
  • FIG. 13A is a perspective view seen from an upper oblique direction showing a modified example of the package structure of the insulated transmission device of the first embodiment.
  • FIG. 13B is a perspective view showing the package structure of FIG. 13A as viewed from an oblique direction.
  • FIG. 14 is a diagram showing a modified example of the package structure of the insulated transmission device of the first embodiment.
  • FIG. 15 is a diagram showing a structural example of the electromagnetic field resonance coupling portion of the second embodiment.
  • FIG. 16 is a diagram showing a modified example of the electromagnetic field resonance coupling portion of the second embodiment.
  • FIG. 17A is a diagram showing a modified example of the electromagnetic field resonance coupling portion of the second embodiment.
  • FIG. 17B is a diagram showing a modified example of the electromagnetic field resonance coupling portion of the second embodiment.
  • FIG. 17C is a diagram showing a modified example of the electromagnetic field resonance coupling portion of the second embodiment.
  • FIG. 18A is a diagram showing the amount of transmission with respect to the frequency of the electromagnetic field resonance coupling portion in which adjacent inductive coupling elements are arranged on the same surface.
  • FIG. 18B is a diagram showing the transmission amount with respect to the frequency of the electromagnetic field resonance coupling portion in which adjacent inductive coupling elements are arranged on different surfaces as shown in FIG. 17C.
  • FIG. 19 is a diagram showing an example of a package structure of the insulated transmission device of the third embodiment.
  • FIG. 20A is a perspective view showing a structural example of the electromagnetic field resonance coupling portion of the fourth embodiment.
  • FIG. 20B is a cross-sectional view showing a structural example of the electromagnetic field resonance coupling portion of FIG. 20A.
  • FIG. 1 is a block diagram showing a system configuration of the insulated transmission device according to the first embodiment.
  • the insulated transmission device 1000 includes an electromagnetic field resonance coupling unit 100, a transmission circuit 201, and a reception circuit 202.
  • the transmission circuit 201 acquires the power supplied from the power supply 2 and the input signal supplied from the signal source 1.
  • the transmission circuit 201 includes a modulation circuit, which modulates the high frequency signal according to the input signal and transmits it to the electromagnetic field resonance coupling unit 100. That is, the transmission circuit 201 transmits a signal (that is, a high-frequency signal after modulation) obtained by modulating the high-frequency signal according to the input signal to the first resonator 101 as a transmission signal.
  • the high frequency signal here is, in other words, a signal having a higher frequency than the input signal.
  • the transmission circuit 201 is realized by, for example, a semiconductor chip.
  • the transmission circuit 201 may include a high-frequency signal generation circuit that generates a high-frequency signal, or the transmission circuit 201 may acquire a high-frequency signal from the outside.
  • the frequency band of the high frequency signal in the first embodiment is, for example, a microwave band (including a millimeter wave band).
  • the frequency of the high frequency signal is 2.4 GHz or more and 5.875 GHz or less (ISM band), but is not particularly limited. It may be in the MHz band.
  • the electromagnetic field resonance coupling unit 100 can be further miniaturized by using a signal having a frequency much higher than that of an inductively coupled element using a coil or a transformer element.
  • the electromagnetic field resonance coupling portion 100 has a first resonator 101 and a second resonator 102.
  • the electromagnetic field resonance coupling unit 100 utilizes a resonance phenomenon based on LC resonance that occurs between the first resonator 101 and the second resonator 102, and secures insulation between the transmitting side and the receiving side. , Power and signals can be transmitted and received.
  • the transmission signal transmitted from the transmission circuit 201 is received by the second resonator 102 via the first resonator 101.
  • the first resonator 101 transmits the transmission signal transmitted by the transmission circuit 201 to the second resonator 102 in a non-contact manner.
  • the second resonator 102 transmits the transmission signal non-contact transmitted by the first resonator 101 to the receiving circuit 202.
  • the receiving circuit 202 includes a rectifier circuit, and the rectifier circuit rectifies (demodulates) the transmission signal received by the second resonator 102. That is, the receiving circuit 202 receives the transmission signal transmitted by the second resonator 102 and demodulates the received transmission signal to generate an output signal corresponding to the input signal.
  • the receiving circuit 202 is realized by, for example, a semiconductor chip.
  • the signal demodulated in the receiving circuit 202 is transmitted to, for example, the gate electrode 3 of the power device, and the power device can be driven while ensuring insulation according to the input of the signal source 1.
  • an insulated gate driver such as a photocoupler
  • another power system for example, an insulated DCDC converter
  • an insulated DCDC converter must be used on the secondary side to supply the power required to drive the gate of the power device.
  • the electromagnetic field resonance coupling portion 100 of the present embodiment includes a first resonator 101 and a second resonator 102, which are two independent couplers.
  • 2A to 2D show an example of the electromagnetic field resonance coupling portion 100 including the first and second resonators.
  • FIG. 2A is a bird's-eye view of the electromagnetic field resonance coupling portion 100 including the two resonators 101 and 102.
  • the x direction is the horizontal direction and the z direction is the vertical direction.
  • the distance g1 is the distance between the dielectric multilayer film 65 and the dielectric multilayer film 66, and more accurately, the distance between the capacitive coupling element 20 and the capacitive coupling element 21.
  • the capacitive coupling element 20 and the capacitive coupling element 21 are a first electrode and a second electrode constituting one capacitive element.
  • a scale bar showing an example of the size is also shown. In this example, the distance g1 is 0.4 mm.
  • the two resonators 101 and 102 have a substantially symmetrical structure and have a structure facing each other in the lateral direction.
  • Each resonator is formed by two or more elements, that is, inductively coupled elements 10 and 11, and capacitively coupled elements 20 and 21, each of which is arranged on a different surface.
  • the resonator of the present embodiment has an inductively coupled element 10 formed on its main surface, and capacitive coupling elements 20 and 21 formed on its side surface (the coupling interface between the primary side and the secondary side mainly responsible for coupling). ..
  • the capacitive coupling elements 20 and 21 in the figure are two planar electrodes provided so as to face each other that constitute the capacitive element.
  • Each resonator consists of, for example, a dielectric multilayer film (60, 61, 70, 71).
  • a dielectric multilayer film 60, 61, 70, 71.
  • ground layers 30 and 31 made of metal are formed on the bottom surface of the dielectric layer of each resonator.
  • FIG. 2B is a cross-sectional view of an electromagnetic field resonance coupling portion 100 composed of two resonators.
  • the resonator of the present embodiment has a structure in which an inductively coupled element 10 formed on the surface and a capacitive coupling element 20 formed on the side surface are arranged in series from the input terminal 40 for a signal.
  • the inductively coupled element 10 and the capacitive coupling element 20 can be electrically connected by the through via 80 and the wiring layer 90 in the drawing.
  • the L and C values of such an inductively coupled element and a capacitively coupled element By appropriately selecting the L and C values of such an inductively coupled element and a capacitively coupled element, a resonance phenomenon can be generated, and high efficiency can be realized even with a coupled element having an insulation distance of 0.4 mm or more.
  • the insulation distance corresponds to the distance g1 between the capacitive coupling element 20 and the capacitive coupling element 21.
  • FIG. 2C and 2D are schematic views of the resonator structure on one side only.
  • FIG. 2C is a view seen from above
  • FIG. 2D is a view seen from below.
  • the ground layer 30 formed on the bottom surface of the dielectric layer is formed at a certain distance from the side surface on which the capacitive coupling element 20 is formed.
  • the electromagnetic field resonance coupling portion 100 and the resonators 101 and 102 of the present embodiment have the following features.
  • the two resonators are completely electrically isolated, and the two structures are approximately symmetrical.
  • the electromagnetic field resonance coupling of the present embodiment is characterized in that it is mainly coupled in the lateral direction.
  • the resonator is composed of an inductively coupled element and a capacitively coupled element, and the inductively coupled element and the capacitively coupled element are formed on different surfaces of the dielectric layer of the resonator. That is, it is characterized in that an inductively coupled element is formed on the main surface of each resonator and a capacitive coupling element is formed on the side surface (the surface where the primary and secondary are coupled).
  • the resonator in the present embodiment is characterized in that the inductively coupled element and the capacitively coupled element are not formed on the same element surface, but are formed on different surfaces (surface and side surface).
  • the structure of this embodiment can partially achieve its effect even if an inductively coupled element is formed on the side surface.
  • a complex electrode pattern such as a coil or transformer on the surface, but it is difficult to form it on the side surface. is there.
  • the resonator in the present embodiment forms a capacitive coupling component on the side forming the coupling.
  • the electromagnetic field resonance coupling portion of the present embodiment can be manufactured at low cost by using a multilayer dielectric film structure such as a printed circuit board, but it can also be realized by forming a metal pattern on the surface of a ceramic substrate such as a sapphire substrate.
  • FIG. 3A and 3B are a bird's-eye view and a side perspective view of a schematic view of the package structure 2000 in the present embodiment based on the system configuration shown in FIG.
  • the first resonator 101 and the second resonator 102 are connected to the transmission circuit 201 and the reception circuit 202 mounted on the lead frames (120, 130) on the primary side and the secondary side, respectively, by wires. Has been done.
  • the primary side and the secondary side are completely electrically separated by the insulation distances of the first and second resonators, and only the package sealing resin 110 exists between them.
  • FIG. 4A and 4B show a schematic view of the package structure 900 of a general insulated transmission device.
  • FIG. 4A is a bird's-eye view showing the entire package structure
  • FIG. 4B shows a detailed cross-sectional view of the electromagnetic field resonance coupler 900a.
  • the electromagnetic field resonance coupler 900a of a general insulated transmission device is an integrated type, and is not separated like the first and second resonators as shown in FIGS. 3A and 3B of the present embodiment. Insulation is ensured in a part of the layer thickness of the multilayer dielectric film inside the integrated structure.
  • an integrated electromagnetic field resonance coupler is formed by a laminated structure of three dielectric layers 975, 976, and 977, and the resonator is formed by metal wiring on the surface of the formed dielectric layer. Can be formed.
  • the resonator structures facing each other via the dielectric layer 976 are formed in the region surrounded by the dotted line. That is, the lower side is the primary resonator and the upper side is the secondary resonator, and electrical insulation is maintained in the intermediate layer.
  • the coupling is in the vertical direction, and it becomes an integrated resonance coupler.
  • the integrated electromagnetic field resonance coupler 900a is mounted on the primary frame 920a and electrically connected to the secondary frame 930a by wire bonding.
  • the insulating layer exists inside the electromagnetic field resonance coupler 900a, it cannot be completely separated by the package sealing resin 910 as in the present embodiment.
  • the primary and secondary are structurally connected by a wire.
  • the conventional structure using such an integrated electromagnetic field resonance coupler is easy to manufacture, but as described above, a gap is generated at the interface between the integrated electromagnetic field resonance coupler 900a and the package sealing resin 910. However, since the risk of dielectric breakdown increases, there is a problem in the reliability of dielectric strength.
  • Patent Document 2 discloses a package structure using two resonators coupled in the vertical direction, unlike the present embodiment.
  • Patent Document 2 is considered to have the same effect as that of the present embodiment, but since the bonding direction is the vertical direction, the package encapsulating resin is compared with FIG. The flow becomes complicated, and unfilled parts of the resin are likely to occur.
  • both the first resonator and the second resonator are mounted at the same height, but Patent Document 2 has different heights, and the lead frame shape and mounting method are complicated.
  • Patent Document 3 discloses a lateral coupling using a transformer. In this case, inductive coupling is realized by using a flexible substrate. As already described, when trying to realize lateral coupling, how to couple the couplers is an issue, and the method of Patent Document 3 has a high degree of difficulty in package assembly, such as using a flexible substrate. ..
  • the coupling uses a signal in the MHz band, the coil shape becomes large and it is difficult to reduce the size.
  • Patent Document 1 discloses that high-efficiency transmission is possible even at an insulation distance of 0.4 mm or more by an electromagnetic field resonance coupling method using a high-frequency signal in the GHz band.
  • Patent Document 1 has a problem in terms of the reliability of insulation described above with respect to the lateral coupling by one coupler.
  • the main resonance portion and the sub-resonance portion are composed of a meander pattern and a capacitive coupling element formed on the same surface on which the meander pattern is formed, so that the resonator is large. There is a problem.
  • it is possible to form a lateral coupling with a meander pattern there is a problem that it is highly difficult to form a zigzag electrode pattern on the side surface.
  • miniaturization is realized by using a high-frequency signal, and inductively coupled elements and capacitively coupled elements are formed on different surfaces of the resonator, that is, the main surface and the side surface, respectively, so that the height is high even in the lateral direction. Achieve efficient electromagnetic resonance coupling.
  • the resonators 101 and 102 shown in this embodiment are composed of one layer or a plurality of dielectric films.
  • Such a structure can be formed by using a glass epoxy board (printed circuit board, PCB) or a ceramic substrate.
  • the first and second resonators are structurally symmetrical, the first resonator 101 will be mainly described.
  • An input terminal 40, a transmission side ground terminal 50, and an inductively coupled element 10 are formed on the surface of the dielectric film of the resonator to be connected to the transmission circuit.
  • a capacitive coupling element 20 is formed on the side surface (bonding surface side) of the dielectric film.
  • the inductive coupling element 10 and the capacitive coupling element 20 are electrically connected by a through via 80 and a wiring layer 90.
  • a ground layer 30 is formed on the back surface of the resonator 101.
  • the ground layer 30 has the same potential as the transmission side ground terminal 50. Therefore, in the dielectric film, the ground terminal 50 and the ground layer 30 may be electrically connected by a through via.
  • the inductively coupled element 10 formed on the surface of the dielectric film can be easily formed on the surface of a printed circuit board or a ceramic substrate.
  • the inductive coupling element 10 preferably has a planar coil shape. By having such a coil shape, it is possible to strengthen the magnetic coupling with the inductive coupling element 11 on the main surface of the second resonator 102 formed on the same plane, and realize highly efficient insulated transmission.
  • the inductively coupled elements 10 and 11 may have a shape other than the circular planar coil as shown in FIGS. 2A to 2D.
  • a rectangular planar coil shape may be used, or an element having an inductive component may be used, and if a resonance state can be realized with the capacitive coupling elements 20 and 21, it is appropriately selected. Can be done.
  • the inductively coupled element includes not only an inductively coupled component but also a capacitively coupled component, and its influence is the shape of the element, the layer thickness of the dielectric film, the relative permittivity, etc. Affected by.
  • the inductive coupling element manufactured on the main surface may have a meander pattern shape as shown in FIG. 5C, or a part thereof. May include a capacitor shape such as a capacitive component.
  • a metal pattern corresponding to the area can be formed on the side surface by using side wiring technology or the like. it can.
  • the capacitive coupling elements 20 and 21 can be formed by controlling the film thickness and the length in the depth direction of the metal film.
  • 6A and 6B are bird's-eye views and cross-sectional views showing a first modification of the resonator 101.
  • FIG. 2B shows an example of forming on the side surface of the dielectric film of the resonator 101, but as shown in FIGS. 6A and 6B, a capacitive coupling element is formed by partially forming metal layers having different thicknesses in the vertical direction. Can be easily formed.
  • the metal film can be thickened to the order of mm, and the capacitive coupling element formation on the side surface in the present embodiment can be easily realized.
  • the side capacitance coupling elements 20 and 21 can be formed by using a plurality of plated through vias.
  • the cross-sectional area of vias and their number, and the land and its layer thickness can be converted into the area of capacity.
  • FIG. 6C is a bird's-eye view showing a second modification of the resonator of the first embodiment.
  • FIG. 6C shows an example of a side capacitance coupling element in which a penetrating via and a land layer are combined.
  • FIG. 6D is a bird's-eye view showing a third modification of the resonator of the first embodiment.
  • FIG. 6D is an example of a side capacitance coupling element in the case of performing a slotted hole processing that can be realized by continuously connecting through vias.
  • Capacitive coupling elements can be easily manufactured by connecting these penetrating vias.
  • the area of the capacitive coupling element in this case is about 2.4 mm ⁇ 0.84 mm.
  • the capacitive coupling elements 20 and 21 in this embodiment are the locations where the largest withstand voltage is applied, it is desirable that the opposing surfaces of the capacitive coupling elements are flat.
  • the land layer is larger in the lateral direction than the surface of the elongated hole structure made of through vias, electric field concentration occurs on the circumference of the land as it is, and there is a concern that the withstand voltage may decrease.
  • FIG. 6D is a structure in which the land structure is removed.
  • the land structure can be physically removed after the printed circuit board is manufactured.
  • the inside of the long holes of the capacitive coupling elements 20 and 21 formed by the long hole processing can be easily manufactured by plating the side surfaces of the holes with metal after forming the through vias. Therefore, the inside of the capacitive coupling elements 20 and 21 with the elongated holes may be hollow as shown in FIG. 6D. Further, the insides of the capacitive coupling elements 20 and 21 may be resin-filled with a dielectric material of the same quality, or a metal may be embedded.
  • the coupling portion is an inductive coupling or a structure using an antenna, it has not a little capacitive coupling component.
  • the coupling capacitance component between the primary and secondary has a finite value even when the resonator is configured only by the inductive coupling element on the main surface.
  • the capacitive coupling in order to make the coupling capacitance component (Cio) in the lateral direction as large as possible, the capacitive coupling having a thickness more than twice that of the metal layer forming the inductive coupling element on the main surface in the longitudinal direction.
  • the elements 20 and 21 are characterized in that they are formed on the side surface of the resonator.
  • the metal layer thickness of the inductively coupled element on the main surface is 18 um, but the length in the vertical direction of the capacitive coupling element formed on the side surface is the elongated hole machining shown in FIG. 6D. If so, the thickness of the dielectric layer is, for example, 0.84 mm.
  • the inductively coupled element is formed on the main surface of the resonator and the capacitive coupling component is formed on the side surface thereof, thereby realizing miniaturization and high efficiency transmission.
  • the structures of the resonators 101 and 102 of the present embodiment may have the ground layers 30 and 31 shown in FIGS. 2A to 2D.
  • ground layers 30 and 31 do not have to be formed on the entire back surface of the resonator. This is because, as described above, in the vicinity of the primary-secondary coupling portion, it can also be coupled to the capacitive coupling elements 20 and 21 and the opposing ground layer on the secondary side.
  • the above problem can be solved by retracting the ground layer from the coupling region as shown in FIG. 2D to form a region without the ground layer on a part of the back surface of the resonator.
  • d1 + g1 + d1 which is the distance between the first ground layer (30) and the second ground layer (31)
  • d1 + g1 + d1 which is the distance between the first ground layer (30) and the second ground layer (31)
  • the distance to the electrode (21) is larger than g1.
  • the resonators 101 and 102 are mounted on the primary lead frame 120 and the secondary lead frame 130 as shown in the package structures of FIGS. 3A and 3B. Since the two lead frames are usually formed of a copper plate, when the resonators 101 and 102 are mounted, the ground layers 30 and 31 described above have the same potential as the two lead frames, so that these lead frames themselves are 1 It is conceivable that the capacitance coupling element 20 on the secondary side, the capacitance coupling element 21 on the secondary side, and the ground layers 30 and 31 are coupled.
  • a dielectric layer 70a is formed in the resonator to secure a distance between the ground layer 30 and the primary lead frame 120. can do.
  • the influence of the ground layer 30 and the primary lead frame 120 on the electromagnetic field resonance can be controlled independently.
  • the ground layer can also be formed on the upper part of the inductively coupled element 10.
  • 8A and 8B show an example of the resonator structure 101b. That is, one dielectric layer 60a may be added, formed on the surface of the inductively coupled element 10, and the ground layer 30a may be formed on the surface thereof. In this case, the input terminal 40a and the ground terminal 50a may be newly formed via the through vias 80a, b, and c.
  • ground layer 30a may be formed so as to have an equipotential potential with the ground terminals 50 and 50a.
  • ground layer on the bottom surface of the dielectric layer 70 is not used in FIGS. 8A and 8B, the structure may be used.
  • ground layer 30a on the upper part of such an inductively coupled element 10, it is expected to have an effect of suppressing the influence of electromagnetic field noise from the outside and the electromagnetic field radiation to the outside of the electromagnetic field resonator of the present embodiment.
  • 9A to 9C are S-parameters (S11, S22) of the electromagnetic field resonance coupling portion of the present embodiment, and actual measurement values of the transmission amount and the reflection amount.
  • FIG. 9D the design parameters of the resonator 101 are shown in FIG. 9D. Since the model structures of FIGS. 9A to 9C are based on the resonators 101 and 102 shown in FIGS. 2A to 2D and have a symmetrical structure, the parameters of the resonator 102 are the same as those of 101.
  • FIG. 9A shows a Smith chart
  • the reflection amount is -26 dB (Fig. 9B) and the transmission amount is -0.6 dB (Fig. 9C).
  • the operating bandwidth was defined in the range where the transmission amount was -10 dB or less, and was in the range of 1.7 to 3.7 GHz, that is, about 2.0 GHz.
  • Such a wide operating bandwidth is preferable in designing an insulated transmission device. This is because high-efficiency transmission is possible even if the oscillation frequency of the transmitter deviates slightly.
  • Such a wide band can be achieved by designing the electromagnetic resonance coupling so as to have two resonance frequencies as is clear from FIG. 9B, and the parameters in FIG. 9D including the inductive coupling element and the capacitive coupling element. It can be realized by adjusting.
  • 10A and 10B are diagrams showing the results of simulating the state of electromagnetic field resonance coupling (vector distribution) of the present embodiment by dividing it into an electric field and a magnetic field from the side surfaces of the first and second resonators.
  • FIGS. 10A and 10B shows the distribution of electric and magnetic fields in a certain phase with a plurality of arrows. It can be confirmed that the electric field components are strongly coupled in the capacitive coupling elements 20 and 21 facing the side surfaces of the resonators (FIG. 10A).
  • the coupling between the inductively coupled elements 10 and 11 is not as strong as that of the capacitive coupling element, but a lateral coupling is observed (FIG. 10B), and the coupling is high due to the two electromagnetic resonance couplings of the inductive coupling and the capacitive coupling. It can be seen that efficient insulated transmission is realized.
  • the insulation distance is determined by the electromagnetic resonance coupling between the inductive coupling element formed on the main surface of the resonator and the capacitive coupling element formed on the side surface thereof. High-efficiency transmission can be realized while maintaining 0.4 mm or more.
  • the dielectric layers 60, 60a, 70 of FIGS. 8A and 8B and a part or all of the package sealing resin 110 are made of a material having a function of promoting the magnetic field coupling of FIG. 10B. May be good. That is, it may be a layer containing a part or all of the magnetic material.
  • the magnetic material is, for example, a material such as ferrite, cobalt, or manganese.
  • These magnetic materials can be easily used as materials for printed circuit boards and have the effect of promoting inductive coupling (magnetic field coupling) in FIG. 10B.
  • 11A to 11C are equivalent circuit diagrams according to this embodiment. 11A to 11C show only the region of the electromagnetic field resonance coupling portion 100.
  • the self-inducing components 10a and 11a also have a mutual-inducing component.
  • the resonance frequencies of the self-inducing components 10a and 11a and the capacitance components 12 and 13 in the first and second resonator structures match, respectively, and the coupling capacitance component 22 (Cio) and the mutual induction component are matched. It is confirmed that the transmission by the highly efficient electromagnetic resonance coupling shown in FIGS. 9A to 9C can be realized.
  • the structure of the present embodiment is more than inductive coupling because the capacitive coupling elements 20 and 21 are formed on the surfaces where the first and second resonators 101 and 102 are closest to each other. It can be said that capacitive coupling plays a leading role.
  • the equivalent circuit of such an insulated transmission circuit in which capacitive coupling is the main component is a capacitive coupling 23 (Cret) as shown in FIG. 11B rather than FIG. 11A, which is a capacitive coupling path different from the coupling capacitive component 22 (Cio). Assuming a sub-resonance path is more accurate as an equivalent circuit. Cret is an abbreviation for Creturn.
  • GND1 (30b) and GND2 (31b), which are the grounds of each other's circuits, are electrically connected. Not connected to.
  • the capacitive coupling 23 (Cret) is composed of a capacitive component mainly formed between the first and second lead frames.
  • the assumed capacitive coupling 23 (Cret) value is about 0.1 to 1.0 pF.
  • the capacitance is about 0.5 pF.
  • the total capacitance between the first and second resonators including the lead frame can be estimated to be approximately (coupling capacitance component 22 (Cio) + capacitive coupling 23 (Cret)), and the value is, for example, 1 pF or less. Can be designed.
  • noise current C total coupling capacitance ⁇ dV / dt.
  • the coupling capacitance component 22 (Cio) and the capacitive coupling 23 (Cret), which have a large area, are as small as possible.
  • the coupling capacitance component 22 (Cio) but also the capacitive coupling 23 (Cret) is optimally designed, so that both noise resistance and high-efficiency transmission can be achieved at the same time.
  • FIG. 11C is an equivalent circuit in which the inductance L of FIG. 11B is replaced with a transmission line (10b, 11b). Even if the electromagnetic field resonance coupling circuit of the present embodiment is given its characteristic impedance as a transmission line, characteristics such as efficiency can be evaluated as an equivalent circuit.
  • the electromagnetic field resonance coupling portion 100 of the present embodiment is completely separated, and has a structure in which two resonators 101 and 102 are coupled in the lateral direction.
  • Capacitive coupling 23 (Modification 1 related to Cret design)
  • the primary and secondary lead frame end faces 120b and 130b facing each other at an insulation distance of 0.4 mm are designed as capacitive coupling 23 (Cret).
  • the thickness and width of the lead frame become large, which imposes design restrictions.
  • the capacitive coupling 23 (Cret) is formed in the first and second resonators, and the coupling capacitive component 22 (Cio) is increased.
  • 12A and 12B are schematic structural diagrams showing only the primary side (101c) of the paired resonators. Since the resonator on the secondary side has a symmetrical structure, the description thereof will be omitted.
  • the dielectric layer 70b is further added to form the capacitive component 23a on the side surface to be the primary-secondary coupling surface, whereby the capacitive coupling 23 (Cret) is formed in the resonator. Can be formed.
  • the capacitance component 23a is also referred to as a return electrode. This return electrode forms a capacitive coupling 23 (Cret) together with the return electrode of the opposing resonator 102a.
  • At least one of the height (that is, the thickness) and the width of the opposite lead frame end faces (120c, 130c) is increased or decreased to increase or decrease the area of the lead frame end faces, and the capacitance coupling is performed.
  • the value of 23 (Cret) can be determined.
  • FIG. 14 is an example of another package structure 2000b of the capacitive coupling 23 (Cret) using a lead frame.
  • (A), (b) and (c) of the figure show a perspective view, a side view and an enlarged view of a part of the side surface.
  • the second modification since the thickness of only a part of the lead frame is changed, the shape of the lead frame becomes complicated, and there is a concern that the manufacturing cost increases.
  • FIG. 14 proposes a method capable of easily designing the capacitance value of the capacitive coupling 23 (Cret) without deforming the lead frame.
  • the metal shield plate 4 is installed in the package so as to straddle the primary lead frame 120 and the secondary lead frame 130.
  • the metal shield plate 4 is electrically insulated from the primary lead frame 120 and the secondary lead frame 130 and has an intermediate potential.
  • the distance between the metal shield plate 4 and each lead frame can be set arbitrarily, and can be 0.4 mm or more. Further, the capacitive coupling 23 (Cret) can be controlled by changing the overlapping area in the vertical direction with each lead frame.
  • the capacitive coupling 23 (Cret) has a value of C0 / 2.
  • Modification 3 has merits that the capacitive coupling 23 (Cret) can be easily increased only by controlling the overlapping area, and the design of the resonator and the lead frame itself does not need to be changed.
  • the capacitive coupling 23 can be formed including the capacitance formed on the end face of the lead frame, and the coupling capacitance can be easily increased by design.
  • the metal shield plate 4 may be a two-layer substrate formed on the surface of the dielectric layer. By doing so, it can be easily handled even when it is implemented in a package.
  • the insulated transmission device has a first dielectric multilayer film 65 composed of a plurality of dielectric layers and a second dielectric multilayer film 66 composed of a plurality of dielectric layers.
  • the resonator 101 and the second resonator 102 are electrically isolated from a DC current, and a predetermined frequency band is provided between the first resonator 101 and the second resonator 102.
  • the first resonator 101 has an inductive coupling element 10 as a first inducing element and a capacitive coupling element 20 as a first electrode constituting the capacitive element.
  • the resonator 102 of 2 has an inductive coupling element 11 as a second inducing element and a capacitive coupling element 21 as a second electrode constituting the capacitive element.
  • the first induction element is provided on the surface of one dielectric layer of the first dielectric multilayer film 65, and the first electrode is provided on the side surface of the first dielectric multilayer film 65.
  • the second induction element is provided on the surface of one of the dielectric layers of the second dielectric multilayer film 66, and the second electrode is provided on the side surface of the second dielectric multilayer film 66. May be good.
  • first electrode and the second electrode may be provided so as to face each other.
  • the distance between the first electrode and the second electrode may be 0.4 mm or more.
  • the insulated transmission device has a first ground layer 30 provided on the first dielectric multilayer film 65 and a second ground layer 31 provided on the second dielectric multilayer film 66.
  • the first ground layer 30 is provided on the surface of one of the first dielectric multilayer films 65
  • the second ground layer 31 is 66 of the second dielectric multilayer films. It may be provided on the surface of one dielectric layer.
  • first ground layer 30 and the second ground layer 31 may be provided between the one dielectric layer 70 and the other dielectric layer 70a.
  • the influence of the lead frame and the first and second ground layers on the electromagnetic field resonance can be controlled independently.
  • first inducing element and the second inducing element may be provided between one dielectric layer and the other dielectric layer.
  • the first inductive element and the second inductive element may have a flat coil-shaped conductor pattern.
  • the first and second induction elements can be easily formed in a planar shape.
  • first guiding element and the second guiding element may be a conductor pattern having a meander pattern shape.
  • the first and second induction elements can be easily formed in a planar shape.
  • a capacitive coupling 23 may be provided in which the first dielectric multilayer film 65 and the second dielectric multilayer film 66 are capacitively coupled to form a return path of an electromagnetic wave.
  • the capacitive circuit element can provide a sub-resonance path as a return path of the transmitted electromagnetic wave.
  • (capacitive coupling 23 (Cret) is formed on the side surface of the first planar return electrode 23a formed on the side surface of the first dielectric multilayer film 65 and the side surface of the second dielectric multilayer film 66.
  • a second return electrode having a planar shape may be provided, and the first return electrode 23a and the second return electrode may be provided so as to face each other.
  • the return path design of the transmitted electromagnetic wave can be facilitated by the design of the first and second return path electrodes.
  • a first lead frame 120 on which the first dielectric multilayer film 65 is placed and a second lead frame 130 on which the second dielectric multilayer film 66 is placed are provided, and the capacitive coupling 23 ( Cret) is composed of an end face of the first lead frame 120 and an end face of the second lead frame 130, and the end face of the first lead frame 120 and the end face of the second lead frame 130 face each other. May be provided.
  • the area design of the end faces of the first and second lead frames makes it possible to facilitate the return path design of the transmitted electromagnetic wave.
  • the area of the end face 120c of the first lead frame 120 is larger than the area of one cross section parallel to the end face 120c of the first lead frame 120, and the area of the end face 130c of the second lead frame 130 is the second. It may be larger than the area of one cross section parallel to the end face 130c in the lead frame 130 of 2.
  • the return path design of the transmitted electromagnetic wave can be facilitated by designing the height (that is, the thickness) of the end faces of the first and second lead frames.
  • the capacitive coupling 23 is a metal shield plate 4 parallel to the surfaces of the first dielectric multilayer film 65 and the second dielectric multilayer film 66, and is the first dielectric in a plan view.
  • a metal shield plate that overlaps a part or all of the multilayer film 65 and also overlaps a part or all of the second dielectric multilayer film 66 may be included.
  • the return path design of the transmitted electromagnetic wave can be facilitated by the arrangement design of the metal shield plate.
  • the permittivity between the first electrode and the second electrode provided so as to face each other is the permittivity of the first dielectric multilayer film 65 and the permittivity of the second dielectric multilayer film 66. It may be different from at least one of.
  • the capacitance value of the capacitive element can be controlled according to the dielectric constant between the first electrode and the second electrode.
  • the distance between the first ground layer 30 and the second ground layer 31 may be larger than the distance between the first electrode and the second electrode.
  • the capacitance value of the above-mentioned capacitive element may be 1 pF or less.
  • One of the applications of the insulated transmission device of the present disclosure is an insulated gate driver for driving a power device.
  • the insulated gate driver may be required not only for signal input but also for power transmission for driving the power device and a signal feedback path (hereinafter, fault signal path) for monitoring the state of the power device. ..
  • FIG. 15 shows only the electromagnetic field resonance coupling portion of the package structure using two pairs of the first and second resonators described in the first embodiment.
  • a small inductive coupling element and a capacitive coupling element can be realized by using a high frequency signal, and a plurality of resonator pairs can be mounted inside the insulated gate driver IC.
  • one resonator pair can be used for the isolated power transmission / reception path, and the other resonator pair can be used for the isolated signal transmission / reception path.
  • each resonator (4) has a separate structure. In this case, there is a demerit that the number of times of die bonding increases, but there is a merit that the resin flow is promoted at the time of resin sealing of the package, and problems such as unfilling are less likely to occur.
  • FIG. 16 is an example in which three resonator pairs 101e and 102e are mounted. In this case, three first and second resonators on the transmitting side and the receiving side are integrated.
  • one resonator pair can be used for the isolated power transmission / reception path
  • the second resonator pair can be used for the isolated signal transmission / reception path
  • the third resonator pair can be used for the fault signal path.
  • the number of die bondings can be reduced (cost reduction by reducing the man-hours), and the risk of misalignment between the primary resonator and the secondary resonator can be suppressed.
  • 17A to 17C are examples in which three resonator pairs 101f and 102f are used as in FIG. 16, and the resonator structure is changed according to the path.
  • the requirements for the power level and efficiency to be transmitted differ between the power transmission path and the signal path.
  • the power transmission path makes the efficiency as high as possible and transmits high power, but since the signal path sends a small amount of power in the first place, even if the efficiency is a little poor, it may not be a big problem.
  • the signal path crosstalk from other paths causes malfunction, so there is a demand to eliminate the influence from other paths as much as possible.
  • FIG. 17A For such applications, the configuration shown in FIG. 17A is desirable. That is, a resonator pair using a planar coil that promotes magnetic coupling on the dielectric surface may be used for the power system, and a resonator pair using a meander pattern on the dielectric surface may be used for other paths.
  • the capacitive coupling element on the side surface of the dielectric layer is designed according to each resonator.
  • planar coil resonator that transmits high power is suitable for high-efficiency transmission, there is concern about interference with other patterns.
  • the influence of the magnetic field of the power system is reduced by using a structure using a meander pattern with a small magnetic coupling component in the signal path and the fault signal path. Crosstalk can be suppressed.
  • crosstalk countermeasures can be flexibly taken by changing the structure and arrangement of the inductively coupled elements on the main surface for each route.
  • FIG. 17B shows the winding direction of the flat coil of a part of the path.
  • the middle pair of the three pairs has the plane coil winding direction opposite.
  • the winding direction of the planar coil of each pair is opposite to the winding direction of the other adjacent pairs.
  • FIG. 17C shows an example of a two-path structure. As shown in this figure, the inductively coupled elements of some paths and the ground plane may be turned upside down. Such a structure is possible because the inductively coupled element and the capacitive element are formed on the main surface and the side surface, respectively, as in the present embodiment.
  • the arrangement of the inductive coupling element on the main surface and its ground surface can be changed without changing the arrangement of the capacitive coupling element at all.
  • FIGS. 18A and 18B are the evaluation results of crosstalk when such an arrangement is taken.
  • 18A and 18B are the results of evaluating the crosstalk of two paths, respectively.
  • FIG. 18A shows the case where the inductively coupled elements are arranged on the same surface
  • FIG. 18B shows the result when the inductively coupled elements and the ground surface are arranged oppositely in the first path and the second path (FIG. 17C). ..
  • the inductive coupling element and the capacitive coupling element are arranged on the main surface and the side surface of the structure of the present embodiment, there is an advantage that the arrangement of the inductive coupling element can be controlled independently.
  • the capacitive coupling 23 may be formed independently in each path or may be one.
  • Fig. 11D shows the equivalent circuit of the electromagnetic field resonance coupling part consisting of three paths. As described above, even if there is only one capacitive coupling 23 (Cret), it functions on the circuit, so that miniaturization can be realized.
  • the insulated transmission device includes a plurality of first resonators 101 and a plurality of second resonators 102.
  • the plurality of first resonators may include a first inductive coupling element 10 having a different shape
  • the plurality of second resonators may include a second inductive coupling element 11 having a different shape. ..
  • FIG. 3A, 3B, 13A, 13B and 14 show examples of package structures 2000, 2000a and 2000b using the electromagnetic field resonator according to the present disclosure, but in the third embodiment, other package structures 2000c are shown. An example of is described.
  • FIG. 19 is a diagram showing an example of a package structure of the insulated transmission device 1000 according to the third embodiment.
  • (A), (b), (c), and (d) of the figure show a bird's-eye view, a top view, a side view, and a bottom view, respectively, and all of them are perspective views.
  • the chip of the transmitting circuit 201 and the first resonator 101a are mounted on the same surface of the lead frame, and the chip of the receiving circuit 202 and the second resonator 102a are mounted on the same surface of the lead frame.
  • each chip and each resonator are mounted on opposite surfaces of the lead frame.
  • the wires of the transmission circuit 201 and the reception circuit 202 of FIG. 19 are connected to the back surfaces of the first and second resonators 101a and 102a.
  • the input terminals and ground terminals formed on the back surface of each resonator are the input terminals 40, output terminals 41 and ground terminals 50, 51 of FIGS. 2A to 2D, and the wiring (via or metal wiring) in the resonator. Can be easily designed using.
  • the transmission circuit 201 is mounted on the lower surface of the lead frame, the metal surface of the lead frame and the ground surface of the resonator act as a shield for the transmitter, so that resistance to external noise and resonance The effect of suppressing noise emission (EMI) from the vessel can be expected.
  • EMI noise emission
  • the resonator side may be the lower surface and the chip side may be the upper surface. In this case, it can be easily dealt with by changing the design so that the lead is bent to the opposite side.
  • the capacitive coupling 23 (Cret) is formed of the metal shield plates 4a and 4b having the intermediate potential of FIG. In this case, a plurality of metal plates are used to design the capacitance value of the capacitive coupling 23 (Cret).
  • the shape of the capacitive coupling 23 is not limited to the examples of FIGS. 14 and 19, and the structures of FIGS. 3A, 3B, 12A, 12B, 13A and 13B shown above may be used.
  • the first and second resonators used in FIG. 19 may be the resonators 101 and 102 shown in FIG. 2A.
  • the distance between the first lead frame and the second lead frame is intentionally made larger than the distance between the first and second resonators. That is, the entire resonator is not mounted on the lead frame, but a part of the resonator is in contact with the lead frame surface.
  • the dielectric layer 70a of FIG. 7 becomes unnecessary, and a simpler structure can be used.
  • one problem of the electromagnetic field resonance coupling coupled in the lateral direction of the present disclosure is the misalignment at the time of mounting. Since the first resonator and the second resonator are completely separated, the capacitance coupling elements on the side surfaces do not completely face each other, and if the displacement occurs, the efficiency deteriorates.
  • the area of the capacitive coupling element in one resonator may be larger than that of the other.
  • the structure of the resonator in the present disclosure does not have to be completely symmetrical, and the electrode area on one side of the capacitive coupling element may be increased, for example, in order to cope with the mounting misalignment.
  • the present disclosure is characterized in that it consists of two completely separated resonators, and electrodes of an inductively coupled element and a capacitively coupled element are formed on the main surface and the side surface of the resonator, respectively.
  • the main purpose is to promote miniaturization
  • the main purpose is to use a high frequency signal (GHz), but it is on the order of MHz used in a general inductive coupling method or capacitive coupling method.
  • GHz high frequency signal
  • the two elements on different surfaces of the resonator, the effects of miniaturization, increase in insulation distance, and improvement in efficiency can be obtained.
  • one of the surfaces of the first electrode and the second electrode facing each other is larger than the other.
  • the capacitance value is lowered when the mounting position is deviated. It is possible to suppress the deterioration of the characteristics of.
  • the resonator according to the present embodiment has an integrated resonator structure and is further miniaturized, unlike the resonators shown in the first to third embodiments.
  • FIG. 20A is a perspective view showing a structural example of the electromagnetic field resonance coupling portion 100b in the present embodiment.
  • FIG. 20B is a cross-sectional view showing a structural example of the electromagnetic field resonance coupling portion of FIG. 20A.
  • the first and second resonators are integrated.
  • the inductively coupled element and the capacitive coupling element formed by the metal wiring in this structure are equivalent to the structures shown in FIGS. 2A to 2D.
  • This structure is formed by multilayer films made of different materials.
  • the difference from the above-described embodiment is that the resonator structures on the primary side and the secondary side coexist in the dielectric layer in the resonator.
  • the dielectric layers 60, 70, 61, and 71 of the first resonator 101 and the second resonator 102 are independent of each other, but the two resonances.
  • the vessels are in physical contact with the package encapsulating resin 110.
  • the dielectric layers 60 and 70 are separated mainly for the purpose of forming the through via 80 and the wiring layer 90, and the dielectric layers 60 and 70 are separated from each other.
  • the relative permittivity of 70 may be equal in design.
  • the dielectric layers 73 and 74 may use a low dielectric material in order to prevent the inductively coupled element from capacitively coupling with the lower ground layer.
  • the dielectric layer 74 has a region in which capacitive coupling mainly occurs in the lateral direction
  • a layer having a high dielectric constant for example, a material having a relative permittivity of 11 or more can be used in order to increase the capacitance.
  • each dielectric layer of the fourth embodiment may contain a magnetic material in part or all of it in order to control the magnetic coupling.
  • layers having different dielectric constants can be used for each dielectric layer, one-dimensional bonding can be realized in a layered manner (horizontal direction), and the package encapsulant region is used.
  • An electromagnetic field resonance coupling different from that of the first to third embodiments showing a "two-dimensional" coupling is realized.
  • “Two-dimensional” is an expression based on the distribution of materials having the same relative permittivity as shown in FIG. 2B, and the electromagnetic field resonance coupling portion of the first to third embodiments has a coupling capacitance component 22. Since the dielectric material that determines (Cio) is determined by the sealing material of the package, the relative permittivity is not fixed in layers.
  • the structure of the dielectric constant is completely different from the structure of the fourth embodiment.
  • the relative permittivity can be changed in layers as shown in FIG. 20B, but between the inductive coupling element and the ground surface which affects the Cg of the equivalent circuit shown in FIGS. 11A and 11B.
  • the relative permittivity of the dielectric layer 74 and the relative permittivity of the dielectric layer 74 between the electrodes of the capacitive coupling elements that determine the coupling capacitance component 22 (Cio) are the same value.
  • the configuration of the fourth embodiment is not appropriate.
  • the structure of the first to third embodiments is a feature of the present disclosure in that the relative permittivity that determines the coupling capacitance component 22 (Cio) can be controlled independently of the dielectric of the coupling element. It can be said that it is a clear difference from the form.
  • the resonator structure in this embodiment is an integrated structure, it is possible to realize a more compact miniaturization than the package structure described in the above embodiment by using the feature.
  • the input / output terminals can be formed on the surface of the dielectric layer 72 by using the via structure.
  • a package structure generally called a compression mold can also be obtained. It can be easily formed.
  • FIGS. 20A and 20B it is a package structure in which a transmission circuit and a reception circuit are mounted on the surfaces of FIGS. 20A and 20B, and the surface of the electromagnetic field resonance coupling portion 100b is molded together with the transmission circuit and the reception circuit with a sealing resin.
  • an electrode is formed on the bottom surface of the package, and the electrode on the bottom surface is soldered to the mounting substrate.
  • the insulated transmission device includes a dielectric substrate having a first dielectric multilayer film 65 and a second dielectric multilayer film 66 formed therein.
  • This disclosure is used for an isolated transmission device that insulates and transmits signals and electric power.
  • it is used as an alternative technology for photocouplers used in insulated gate drivers for driving power devices, semiconductor relays, and photoMOS relays.

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Abstract

L'invention concerne une unité de couplage par résonance électromagnétique (100) qui comprend un premier film multicouche diélectrique (65), un second film multicouche diélectrique (66), un premier résonateur (101) du premier film multicouche diélectrique (65), un second résonateur (102) du second film multicouche diélectrique (66), le premier résonateur (101) et le second résonateur (102) transmettant des ondes électromagnétiques dans une bande de fréquences prédéterminée, le premier résonateur (101) comportant un premier élément inductif (10) et une première électrode (20) constituant un élément capacitif, et le second résonateur (102) comportant un second élément inductif (11) et une seconde électrode (21) constituant l'élément capacitif.
PCT/JP2020/038557 2019-10-24 2020-10-13 Dispositif isolé de transmission WO2021079782A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013145019A1 (fr) * 2012-03-30 2013-10-03 株式会社日立製作所 Support de transmission isolé et appareil de transmission isolé
JP2015213304A (ja) * 2014-04-15 2015-11-26 パナソニックＩｐマネジメント株式会社 電磁共鳴結合器、および、伝送装置
JP2017220922A (ja) * 2016-03-02 2017-12-14 パナソニックＩｐマネジメント株式会社 信号伝送装置、及び、その製造方法
JP2017220927A (ja) * 2016-06-02 2017-12-14 パナソニック株式会社 電磁共鳴結合器、及び、伝送装置
JP2018170610A (ja) * 2017-03-29 2018-11-01 パナソニック株式会社 電磁共鳴結合器及びこれを用いたゲート駆動回路、信号伝送装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013145019A1 (fr) * 2012-03-30 2013-10-03 株式会社日立製作所 Support de transmission isolé et appareil de transmission isolé
JP2015213304A (ja) * 2014-04-15 2015-11-26 パナソニックＩｐマネジメント株式会社 電磁共鳴結合器、および、伝送装置
JP2017220922A (ja) * 2016-03-02 2017-12-14 パナソニックＩｐマネジメント株式会社 信号伝送装置、及び、その製造方法
JP2017220927A (ja) * 2016-06-02 2017-12-14 パナソニック株式会社 電磁共鳴結合器、及び、伝送装置
JP2018170610A (ja) * 2017-03-29 2018-11-01 パナソニック株式会社 電磁共鳴結合器及びこれを用いたゲート駆動回路、信号伝送装置

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