WO2021077839A1 - Photodétecteur rapide à base d'hétérojonction graphène/disulfure de molybdène/graphène, et son procédé de préparation - Google Patents

Photodétecteur rapide à base d'hétérojonction graphène/disulfure de molybdène/graphène, et son procédé de préparation Download PDF

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WO2021077839A1
WO2021077839A1 PCT/CN2020/105587 CN2020105587W WO2021077839A1 WO 2021077839 A1 WO2021077839 A1 WO 2021077839A1 CN 2020105587 W CN2020105587 W CN 2020105587W WO 2021077839 A1 WO2021077839 A1 WO 2021077839A1
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electrode
graphene
layer
substrate
molybdenum disulfide
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Chinese (zh)
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张晗
曾永宏
王慧德
郭志男
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深圳大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention requires the priority of the prior application of the application number 201911026280.2 with the title of “graphene/molybdenum disulfide/graphene heterojunction-based fast photodetector and its preparation method” filed on October 25, 2019.
  • the content of the earlier application is incorporated into this text by way of introduction.
  • the invention relates to the field of photodetectors, in particular to a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction and a preparation method thereof.
  • a photodetector is a device that converts optical signals into electrical signals.
  • Photoelectric detectors have a wide range of uses, covering various fields of military and national economy. For example, they are mainly used for ray measurement and detection, industrial automatic control, photometric measurement, etc. in the visible and near-infrared bands.
  • Semiconductor photodetectors are widely used in the fields of optical fiber communication, infrared remote sensing, measurement and diagnosis instruments.
  • Conventional semiconductor photodetectors have problems such as low response, slow response time, and low detection sensitivity.
  • traditional photodetectors based on semiconductor materials such as silicon, gallium arsenide, indium gallium arsenide, etc. generally have problems such as narrow response bands and insufficient response sensitivity.
  • the response speed of the molybdenum disulfide photodetector is on the second level, which is increasingly unable to meet the needs of work.
  • the present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • the present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, including a substrate, a first electrode, a second electrode, a first graphene layer, and a molybdenum disulfide layer And a second graphene layer, the first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, and the first electrode and the second electrode A graphene layer, the molybdenum disulfide layer, and the second graphene layer are sequentially stacked in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphene layer It is in contact with the second graphene layer.
  • a graphene/molybdenum disulfide/graphene heterojunction is arranged in the photodetector.
  • the first electrode and the first graphene layer are on one side
  • the electrode, the second electrode and the second graphene layer are the other side electrode. Since graphene has a very small absorption rate of light, it will hardly block the light from reaching the molybdenum disulfide layer and will not affect the absorption of light by the molybdenum disulfide layer.
  • the thickness of the molybdenum disulfide is the line width of the device, that is, the device with this vertical structure
  • the line width can be greatly reduced, the smallest can reach ⁇ 0.6nm, that is, the thickness of a single layer of molybdenum disulfide.
  • the reduction of the photodetector channel means that the time for the photogenerated carriers in the device to reach the electrodes at both ends to form a photocurrent is greatly shortened, which will significantly improve the response speed of the photodetector.
  • the Fermi level of molybdenum disulfide is not completely matched with that of graphene, and photo-generated carriers are easily recombined, so we can apply a voltage to the gate electrode to adjust and optimize the potential between graphene and molybdenum disulfide Therefore, the photo-generated carriers of the device can be effectively separated under the action of the internal potential barrier of the heterojunction, and the photoelectric responsivity of the device is increased. Therefore, the photodetector based on the vertical structure heterojunction of graphene/molybdenum disulfide/graphene provided by the present invention has an ultra-small line width, an ultra-fast response speed, and can theoretically reach the picosecond level.
  • the substrate may be a flexible substrate or a rigid substrate.
  • the material of the substrate includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane.
  • the substrate is a flexible substrate.
  • the substrate may be a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate.
  • the size of the substrate is not limited, and the specific size can be selected according to actual needs.
  • the photodetector when the substrate is a flexible substrate, the photodetector further includes a dielectric layer and a gate, and the dielectric layer and the gate are disposed on the substrate and the first graphene Between the layers, the dielectric layer is disposed between the gate and the first graphene layer.
  • the response speed of the photodetector can also be adjusted by controlling the grid, so that the response speed reaches the picosecond level.
  • the material of the dielectric layer is at least one of aluminum oxide, hafnium dioxide, and boron nitride.
  • the material of the dielectric layer may be, but is not limited to, hexagonal boron nitride.
  • the material of the gate is a metal material.
  • the material of the first electrode and the second electrode includes at least one of gold, silver, platinum, copper, chromium, and titanium.
  • the materials of the first electrode and the second electrode may be the same or different, which is not limited.
  • the first electrode and the second electrode include a connection layer and a metal layer, and the connection layer is in contact with the substrate.
  • the material of the connection layer includes chromium and/or titanium
  • the material of the metal layer includes at least one of gold, silver, platinum and copper.
  • the connecting layer in addition to being used for conducting electricity, the connecting layer also has a certain connection function, so that the metal layer and the substrate are better adhered and connected, and the bonding force between the first electrode and the second electrode and the substrate is improved.
  • the first electrode and the second electrode are both formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate, and the thickness of the chromium layer is 5 nm-10 nm, The thickness of the gold layer is 20 nm-80 nm.
  • the thickness of the first electrode is 25nm-90nm
  • the thickness of the second electrode is 25nm-90nm
  • the distance between the first electrode and the second electrode is 1 ⁇ m-15 ⁇ m. That is, the size of the channel structure formed between the first electrode and the second electrode in the first direction is 1 ⁇ m-15 ⁇ m.
  • the first graphene layer is composed of a single layer of graphene or multiple layers of graphene
  • the molybdenum disulfide layer is composed of a single layer of molybdenum disulfide or multiple layers of molybdenum disulfide
  • the second The graphene layer is composed of a single layer of graphene or multiple layers of graphene.
  • the thickness of the first graphene layer is 0.3nm-15nm
  • the thickness of the molybdenum disulfide layer is 0.6nm-25nm
  • the thickness of the second graphene layer is 0.3nm-15nm.
  • part of the first graphene layer is disposed on the surface of the first electrode, or the first graphene layer is disposed in the channel structure and is close to the first electrode and the second electrode One end of the contact connection. That is to say, when part of the first graphene layer is disposed on the surface of the first electrode, the part of the first graphene layer is directly disposed on the surface of the first electrode, that is, it is perpendicular to the surface of the first electrode.
  • the two are stacked and connected, or when the first graphene layer is arranged in the channel structure and is in contact with the end of the first electrode close to the second electrode, that is, in parallel
  • the first electrode and the first graphene layer are sequentially arranged and connected in contact.
  • part of the second graphene layer is provided on the surface of the second electrode, or the second graphene layer is provided in the channel structure and is close to the first electrode with the second electrode One end of the contact connection. That is to say, when part of the second graphene layer is disposed on the surface of the second electrode, the part of the second graphene layer is directly disposed on the surface of the second electrode, that is, it is perpendicular to the surface of the second electrode.
  • the two are stacked and connected, or when the second graphene layer is arranged in the channel structure and is in contact with the end of the second electrode close to the first electrode, that is, in parallel
  • the second electrode and the second graphene layer are sequentially arranged and connected in contact.
  • part of the first graphene layer is disposed on the surface of the first electrode, and part of the second graphene layer is disposed on the surface of the second electrode.
  • the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as the molybdenum disulfide layer on the substrate.
  • the area ratio of the orthographic projection is 1: (0.2-5).
  • the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as the molybdenum disulfide layer on the substrate.
  • the orthographic projections are completely overlapped, which helps to improve the rapid response.
  • the first graphene layer, the molybdenum disulfide layer and the second graphene layer are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode, and is used in the first electrode and/or the surface of the second electrode.
  • the small cracks and cracks can be repaired to prevent the cracks and cracks from affecting the work of the photodetector, thereby realizing a self-repairing process and increasing the service life of the photodetector.
  • the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is disposed on a side surface of the electrode base close to the first electrode and/or the second electrode.
  • the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer , At least one of polyvinyl alcohol and its derivatives.
  • the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the invention can realize fast-response photodetection, has high sensitivity, and widens its application range.
  • the present invention provides a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, including:
  • a first graphene film, a molybdenum disulfide film, and a second graphene film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphene film and the second graphene film.
  • the second graphene film is contacted and connected to obtain a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • the first graphene film, the molybdenum disulfide film, and the second graphene film may be prepared by, but not limited to, the exfoliation method.
  • the preparation method further includes:
  • a self-healing material is coated on the surface of the first electrode and/or the second electrode to form a self-healing layer; an electrode material is deposited on the self-healing layer to form a self-healing electrode.
  • the preparation method of the fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction provided by the present invention is simple and easy to operate, and can produce a fast response photodetector.
  • the present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • the response speed makes the response speed of the photodetector reach the millisecond level, which is conducive to its wide application.
  • the invention also provides a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, which is simple and easy to operate, and can respond quickly.
  • FIG. 1 is a schematic structural diagram of a fast photodetector based on a graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention.
  • FIG. 2 is a flow chart of a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention.
  • Figure 3 is a photoelectric response test result diagram of the photodetector provided in Example 1 and the comparative example of the present invention.
  • Figure 3(a) is a photoelectric response test result diagram of the photodetector provided in Example 1, and Figure 3(b) ) The photoelectric response test result graph of the photodetector provided by the comparative example.
  • a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction including a substrate 10, a first electrode 20, a second electrode 30, and a first
  • the graphene layer 40, the molybdenum disulfide layer 50 and the second graphene layer 60, the first electrode 20 and the second electrode 30 are arranged at intervals on one side surface of the substrate 10, and a groove is formed between the first electrode 20 and the second electrode 30
  • the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure.
  • the first electrode 20 and the second electrode 30 are connected to the first graphene layer 40 and the second graphene layer 40, respectively.
  • the two graphene layers 60 are in contact and connection.
  • the response speed of the photodetector is significantly improved.
  • the response speed of the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction is on the order of milliseconds.
  • the substrate 10 may be a flexible substrate or a rigid substrate.
  • the material of the substrate 10 includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane.
  • the substrate 10 It is a flexible substrate to improve the flexibility of the photodetector and further broaden the application range of the photodetector. It can be used but not limited to the field of flexible electronics.
  • the substrate 10 may be, but not limited to, a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate.
  • the size of the substrate 10 is not limited, and the specific size can be selected according to actual needs.
  • the thickness of the substrate 10 is 100 ⁇ m-1000 ⁇ m. Further, the thickness of the substrate 10 is 300 ⁇ m-800 ⁇ m.
  • the photodetector when the substrate is a flexible substrate, the photodetector further includes a dielectric layer and a gate, the dielectric layer and the gate are arranged between the substrate and the first graphene layer, and the dielectric layer is arranged on Between the gate and the first graphene layer.
  • the response speed of the photodetector can also be adjusted by controlling the grid, so that the response speed reaches the picosecond level.
  • the material of the dielectric layer is at least one of aluminum oxide, hafnium dioxide, and boron nitride.
  • the material of the dielectric layer can be, but is not limited to, hexagonal boron nitride.
  • the material of the gate is a metal material.
  • the material of the gate may be but not limited to gold.
  • the material of the first electrode 20 and the second electrode 30 includes at least one of gold, silver, platinum, copper, chromium and titanium.
  • the materials of the first electrode 20 and the second electrode 30 may be the same or different, which is not limited.
  • the first electrode 20 and the second electrode 30 include a connection layer and a metal layer, and the connection layer is in contact with the substrate 10.
  • the material of the connection layer includes chromium and/or titanium
  • the material of the metal layer includes at least one of gold, silver, platinum and copper.
  • connection layer in addition to being used for conducting electricity, the connection layer also plays a role in connection, so that the metal layer and the substrate 10 are better adhered and connected, and the bonding force between the first electrode 20 and the second electrode 30 and the substrate 10 is improved.
  • the thickness of the connection layer is 5 nm-10 nm, and the thickness of the metal layer is 20 nm-80 nm. Further, the thickness of the connection layer is 7nm-9nm, and the thickness of the metal layer is 23nm-71nm.
  • both the first electrode 20 and the second electrode 30 are formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate 10, the thickness of the chromium layer is 5nm-10nm, and the thickness of the gold layer is 20nm -80nm.
  • the thickness of the first electrode 20 is 25 nm-90 nm, and the thickness of the second electrode 30 is 25 nm-90 nm. Further, the thickness of the first electrode 20 is 30 nm-80 nm, and the thickness of the second electrode 30 is 30 nm-80 nm.
  • the distance between the first electrode 20 and the second electrode 30 is 1 ⁇ m-15 ⁇ m. That is, the size of the channel structure formed between the first electrode 20 and the second electrode 30 in the first direction is 1 ⁇ m-15 ⁇ m.
  • the first electrode 20 and the second electrode 30 are in contact with the first graphene layer 40 and the second graphene layer 60, respectively, and the first electrode and the second electrode can be used as source and drain.
  • the first graphene layer 40 is composed of a single layer of graphene or multiple layers of graphene
  • the molybdenum disulfide layer 50 is composed of a single layer of molybdenum disulfide or multiple layers of molybdenum disulfide
  • the second graphene layer 60 It is composed of single-layer graphene or multi-layer graphene.
  • the thickness of the first graphene layer 40 is 0.3nm-15nm
  • the thickness of the molybdenum disulfide layer 50 is 0.6nm-25nm
  • the thickness of the second graphene layer 60 is 0.3nm-15nm, which improves The response speed of the photodetector.
  • the thickness of the first graphene layer 40 is 0.3nm-10nm
  • the thickness of the molybdenum disulfide layer 50 is 0.6nm-15nm
  • the thickness of the second graphene layer 60 is 0.3nm-10nm, which further improves the photodetector responding speed.
  • the response speed of the photodetector is Up to picosecond level.
  • the photodetector The response speed reaches picosecond level.
  • the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure, and the first electrode 20 and the second electrode 30 are respectively connected to the first graphene layer 40. It is in contact with the second graphene layer 60.
  • the first electrode 20 is in contact and connection with the first graphene layer 40, and is not in direct contact and connection with the molybdenum disulfide layer 50 and the second graphene layer 60
  • the second electrode 30 is in contact with the second graphene layer.
  • the layer 60 is in contact and connected with the first graphene layer 40 and the molybdenum disulfide layer 50 without direct contact, so as to realize fast response photoelectric detection.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, or the first graphene layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30 connection. That is, when part of the first graphene layer 40 is disposed on the surface of the first electrode 20, the part of the first graphene layer 40 is directly disposed on the surface of the first electrode 20, that is, in a direction perpendicular to the surface of the substrate 10 , The two are stacked and connected, or when the first graphene layer 40 is arranged in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, that is, in a direction parallel to the surface of the substrate 10, the first graphene layer 40 The electrodes 20 and the first graphene layer 40 are arranged in sequence and connected in contact.
  • a part of the second graphene layer 60 is disposed on the surface of the second electrode 30, or the second graphene layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20 connection.
  • the part of the second graphene layer 60 is directly provided on the surface of the second electrode 30, that is, in a direction perpendicular to the surface of the substrate 10 .
  • the two are stacked and connected, or when the second graphene layer 60 is arranged in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, that is, in a direction parallel to the surface of the substrate 10, the second graphene layer 60
  • the electrodes 30 and the second graphene layer 60 are arranged in sequence and connected in contact.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30.
  • the first graphene layer The contact area between 40 and the surface of the first electrode 20 is large, and the contact area between the second graphene layer 60 and the surface of the second electrode 30 is large, which is more conducive to improving the responsiveness of the photodetector.
  • the total thickness of the first electrode 20, the first graphene layer 40 and the molybdenum disulfide layer 50 is equal to the thickness of the second electrode 30 layer, thereby improving the stability of the overall structure.
  • the orthographic projection of the first graphene layer 40 on the surface of the first electrode 20 accounts for 10%-40% of the surface area of the first electrode 20, and the orthographic projection of the second graphene layer 60 on the surface of the second electrode 30 accounts for the first 10%-40% of the surface area of the second electrode 30 further improves the rapid response of the photodetector.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, part of the first graphene layer 40 is in contact with the substrate 10, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30. At this time, the surface of the first graphene layer 40 is not parallel to the surface of the substrate 10 and is arranged obliquely.
  • the thickness of the first electrode 20 is on the order of nanometers.
  • the length of the first graphene layer 40 is on the order of micrometers.
  • the degree of tilt can be ignored.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20
  • part of the second graphene layer 60 is disposed on the surface of the second electrode 30, and part of the second graphene layer 60 is in contact with the substrate 10. .
  • the surface of the second graphene layer 60 is not parallel to the surface of the substrate 10, and is arranged obliquely
  • the thickness of the second electrode 30 is nanometers
  • the length of the second graphene layer 60 is micrometers
  • the length of the second graphene layer 60 is micrometers.
  • the degree of tilt can be ignored.
  • the first graphene layer 40 when the first graphene layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, the first graphene layer 40 and the molybdenum disulfide layer
  • the total thickness of 50 is equal to the thickness of the second electrode 30 layer, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30, thereby improving the stability of the overall structure.
  • the second graphene layer 60 when the second graphene layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, the second graphene layer 60 and the molybdenum disulfide layer
  • the total thickness of 50 is equal to the thickness of the first electrode 20 layer, and part of the first graphene layer 40 is disposed on the surface of the first electrode 20, thereby improving the stability of the overall structure.
  • the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure, including the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer.
  • the olefin layer 60 is sequentially stacked and arranged in the channel structure.
  • the first graphene layer 40 is closer to the substrate 10 than the molybdenum disulfide layer 50 and the second graphene layer 60, or the second graphene layer 60 is closer to the substrate 10 than the first graphene layer 60.
  • the olefin layer 40 and the molybdenum disulfide layer 50 are closer to the substrate 10.
  • the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the area where the molybdenum disulfide layer 50 is on the substrate 10
  • the ratio of the orthographic projection area is 1: (0.2-5).
  • the ratio of the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 to the area of the orthographic projection of the molybdenum disulfide layer 50 on the substrate 10 is 1: (1-3). Furthermore, the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is compared with the area of the orthographic projection of the molybdenum disulfide layer 50 on the substrate 10 It is 1:(1-1.5), which is more conducive to photodetection, while reducing dark current and saving graphene materials.
  • the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the molybdenum disulfide layer 50 on the substrate 10.
  • the ratio of the orthographic projection area is 1:1.
  • the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the area where the molybdenum disulfide layer 50 is on the substrate 10
  • the orthographic projections are completely overlapped, improving fast response.
  • the first graphene layer 40, the molybdenum disulfide layer 50 and the second graphene layer 60 are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
  • the channel structure includes the area between the first electrode 10 and the second electrode 20, and also includes the space above the area. That is to say, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 may be laminated and disposed in the area between the first electrode 10 and the second electrode 20, or may be disposed in the first electrode 10 and Above the area between the second electrodes 20. In an embodiment of the present invention, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are stacked in the region between the first electrode 10 and the second electrode 20.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode 20 and/or the second electrode 30.
  • the self-healing electrode is arranged on the surface of the first electrode 20 and/or the second electrode 30, and is used to prevent the occurrence of small cracks and cracks in the first electrode 20 and/or the second electrode 30. , The cracks are repaired to avoid the occurrence of cracks and cracks from affecting the work of the photoelectric detector, thereby realizing the self-repairing process, and improving the service life of the photoelectric detector.
  • the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is arranged on a side surface of the electrode base close to the first electrode and/or the second electrode.
  • a self-healing layer is provided on one surface of the electrode substrate.
  • a self-repairing layer is provided on a surface portion of the electrode substrate.
  • the orthographic projection of the self-healing layer on the surface of the electrode substrate accounts for 20%-70% of the surface area of the electrode substrate.
  • the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer, poly At least one of vinyl alcohol and its derivatives.
  • the material of the self-healing layer may be, but is not limited to, long-chain carbonylation modified polyurethane.
  • the material of the electrode substrate includes at least one of gold, silver, platinum, copper, chromium and titanium.
  • the electrode base includes an electrode connection layer and an electrode metal layer, and the electrode connection layer is in contact with the self-healing layer.
  • the material of the electrode connection layer includes chromium and/or titanium, and the material of the electrode metal layer includes at least one of gold, silver, platinum and copper.
  • the electrode connection layer not only serves for conduction, but also has a certain connection function, so that the electrode metal layer and the self-healing layer are better adhered and connected, and the bonding force between the electrode substrate and the self-healing layer is improved.
  • the electrode substrate is formed by stacking a chromium layer and a gold layer.
  • FIG. 2 is a flowchart of a method for manufacturing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention, including:
  • S110 Provide a substrate, deposit electrode material on one side surface of the substrate to form a first electrode and a second electrode spaced apart, wherein a channel structure is formed between the first electrode and the second electrode.
  • the electrode material includes at least one of gold, silver, platinum, copper, chromium, and titanium.
  • the materials of the first electrode and the second electrode may be the same or different, which is not limited.
  • the electrode material is deposited by evaporation, sputtering or ion plating.
  • the substrate is pasted on a precision silicon-based mask with electrode patterns, and then placed in an electron beam evaporator to evaporate electrode materials to obtain a substrate with blank electrode patterns. The selection of the substrate, the first electrode and the second electrode are as described above, and will not be repeated here.
  • S120 Laminating a first graphene film, a molybdenum disulfide film, and a second graphene film in the channel structure in sequence, and the first electrode and the second electrode are respectively connected to the first graphene film It is connected in contact with the second graphene film to obtain a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction includes a substrate, a first electrode, a second electrode, a first graphene layer, a molybdenum disulfide layer, and a second graphene layer, The first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, and the first graphene layer, the molybdenum disulfide layer and the second graphene layer are sequentially stacked on In the channel structure, the first electrode and the second electrode are respectively in contact with the first graphene layer and the second graphene layer.
  • the first graphene film, the molybdenum disulfide film, and the second graphene film correspond to the first graphene layer, the molybdenum disulfide layer, and the second graphene layer in sequence.
  • the first graphene layer, the molybdenum disulfide layer, and the second graphene layer The selection of the two graphene layers is as described above, and will not be repeated here.
  • the first graphene film, the molybdenum disulfide film, and the second graphene film may be prepared by a lift-off method, but are not limited to.
  • the preparation method further includes: coating a self-healing material on the surface of the first electrode and/or the second electrode to form a self-healing layer; depositing electrode material on the self-healing layer to form a self-healing electrode .
  • the preparation process may be performed after forming the first electrode and the second electrode, or after forming at least one of the first graphene layer, the molybdenum disulfide layer, and the second graphene layer, which is not limited.
  • the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the present invention solves the response of the existing photodetector by setting the graphene/molybdenum disulfide/graphene heterojunction in the photodetector
  • the problem of slow speed makes the response speed of the photodetector reach the millisecond level, which significantly improves the response speed of the photodetector, which is conducive to its wide application.
  • the preparation method of the fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction provided by the invention is simple and easy to operate, and can realize a fast response photodetector.
  • the polyethylene terephthalate (PET) substrate was cut into 1 ⁇ 1cm 2 size, the silicon-based mask with the electrode shape was fixed on the PET substrate, and the chromium layer was successively evaporated by the method of thermal evaporation And the gold layer, where the thickness of the chromium layer is 5nm, the thickness of the gold layer is 40nm, and finally the PET substrate is taken out to obtain a flexible PET substrate with the first electrode and the second electrode arranged at intervals, the first electrode and the second electrode The thickness is 45nm, and a channel structure is formed between the first electrode and the second electrode.
  • PET polyethylene terephthalate
  • the first graphene film, the molybdenum disulfide film, and the second graphene film are sequentially stacked and arranged in the channel structure to obtain graphene/molybdenum disulfide/ Graphene heterojunction, part of the first graphene film is set on the surface of the first electrode, part of the second graphene film is set on the surface of the second electrode, the thickness of the first graphene film is 10nm, and the thickness of the molybdenum disulfide film is 15nm , The thickness of the second graphene film is 10nm, that is, a fast photodetector based on graphene/molybdenum
  • the substrate is taken out to obtain a polydimethylsiloxane substrate with a first electrode and a second electrode spaced apart.
  • the thickness of the first electrode and the second electrode is 60nm, and a channel is formed between the first electrode and the second electrode structure.
  • the thickness of the first graphene film is 8nm
  • the thickness of the molybdenum disulfide film is 18nm
  • the second graphene film is The thickness of the graphene film is 12nm.
  • the first graphene film, the molybdenum disulfide film and the second graphene film are stacked in the channel structure in order to obtain a graphene/molybdenum disulfide/graphene heterojunction, and the first electrode
  • the second electrode is in contact with the first graphene film and the second graphene film respectively, and a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction is prepared.
  • the polyethylene terephthalate (PET) substrate was cut into 1 ⁇ 1cm 2 size, the silicon-based mask with the electrode shape was fixed on the PET substrate, and the chromium layer was successively evaporated by the method of thermal evaporation And the gold layer, where the thickness of the chromium layer is 5nm, the thickness of the gold layer is 40nm, and finally the PET substrate is taken out to obtain a flexible PET substrate with the first electrode and the second electrode arranged at intervals, the first electrode and the second electrode The thickness is 45nm, and a channel structure is formed between the first electrode and the second electrode.
  • PET polyethylene terephthalate
  • the molybdenum disulfide film is arranged in the channel structure and is in contact with the first electrode and the second electrode.
  • the thickness of the molybdenum disulfide film is 15nm, that is, the photoelectricity based on molybdenum disulfide is prepared. detector.
  • the photodetectors prepared in Example 1 and the comparative example were placed on the probe platform matched with the semiconductor characteristic analyzer, and the accurate position of the device on the flexible substrate was found through the matched CCD imaging system.
  • the two probes matched with the probe station are selected to respectively contact the first electrode and the second electrode of the device.
  • Open the semiconductor characteristic analyzer test software which is set as the drain probe to select the voltage bias mode, the fixed bias is 1V, and the other metal probe is the source, and the voltage is set to 0V.
  • Figure 3 is the photoelectric response of the photodetector provided in Example 1.
  • Test result graph Figure 3(b) is the photoelectric response test result graph of the photodetector provided by the comparative example.
  • the photodetector provided in Example 1 has a response time of 0.13s from no light to light, and a response time of 0.06s from no light to light. The response speed is very fast, reaching the millisecond level.
  • the provided photodetector has a response time of 4.5s from no light to light, and a response time of 6.4s from no light to light, and the response speed is slow. Therefore, the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the present invention can significantly improve the response speed of the photodetector and realize a millisecond response.

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Abstract

L'invention concerne un photodétecteur rapide à base d'une hétérojonction graphène/disulfure de molybdène/graphène, comprenant un substrat (10), une première électrode (20), une deuxième électrode (30), une première couche de graphène (40), une couche de disulfure de molybdène (50), et une deuxième couche de graphène (60). La première électrode (20) et la deuxième électrode (30) sont agencées à un intervalle sur une surface sur un côté du substrat (10), la première électrode (20) et la deuxième électrode (30) formant une structure de canal. La première couche de graphène (40), la couche de disulfure de molybdène (50), et la deuxième couche de graphène (60) sont empilées séquentiellement dans la structure de canal, la première électrode (20) et la deuxième électrode (30) étant en contact avec la première couche de graphène (40) et la deuxième couche de graphène (60) respectivement. La réalisation de l'hétérojonction graphène/disulfure de molybdène/graphène dans le photodétecteur entraîne une augmentation significative de la vitesse de réponse du photodétecteur. La vitesse de réponse peut atteindre l'échelle des millisecondes, aidant à une large application du photodétecteur.
PCT/CN2020/105587 2019-10-25 2020-07-29 Photodétecteur rapide à base d'hétérojonction graphène/disulfure de molybdène/graphène, et son procédé de préparation WO2021077839A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN110993702A (zh) * 2019-10-25 2020-04-10 深圳大学 基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103531655A (zh) * 2013-10-28 2014-01-22 鲍桥梁 一种与硅光波导集成的石墨烯异质结光探测器
US20150014630A1 (en) * 2013-07-15 2015-01-15 Sungkyunkwan University Foundation For Corporate Collaboration Tunneling devices and methods of manufacturing the same
US20170117430A1 (en) * 2015-10-21 2017-04-27 Samsung Electronics Co., Ltd. Photodetector using bandgap-engineered 2d materials and method of manufacturing the same
CN107316915A (zh) * 2017-07-04 2017-11-03 中山大学 可见光波段的集成石墨烯二硫化钼的光电探测器及其制备方法
CN107527968A (zh) * 2017-07-16 2017-12-29 北京工业大学 一种石墨烯‑二硫化钼侧向异质结光电探测器结构
CN207038541U (zh) * 2017-07-30 2018-02-23 北京蓝木科技有限公司 一种高响应的石墨烯‑二硫化钼柔性光电传感器及光电检测设备
CN110993702A (zh) * 2019-10-25 2020-04-10 深圳大学 基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103606418B (zh) * 2013-10-22 2015-10-28 华南师范大学 一种树叶状透明导电电极的制备方法
CN105489693B (zh) * 2015-12-31 2017-09-29 南京大学 基于二维层状薄膜材料p‑g‑n异质结光电子器件
CN108231817A (zh) * 2018-01-29 2018-06-29 杭州紫元科技有限公司 一种基于二维材料/绝缘层/半导体结构的低功耗电荷耦合器件
CN109755307B (zh) * 2019-01-02 2021-02-12 南京大学 一种基于二维层状材料的雪崩场效应晶体管及测量装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150014630A1 (en) * 2013-07-15 2015-01-15 Sungkyunkwan University Foundation For Corporate Collaboration Tunneling devices and methods of manufacturing the same
CN103531655A (zh) * 2013-10-28 2014-01-22 鲍桥梁 一种与硅光波导集成的石墨烯异质结光探测器
US20170117430A1 (en) * 2015-10-21 2017-04-27 Samsung Electronics Co., Ltd. Photodetector using bandgap-engineered 2d materials and method of manufacturing the same
CN107316915A (zh) * 2017-07-04 2017-11-03 中山大学 可见光波段的集成石墨烯二硫化钼的光电探测器及其制备方法
CN107527968A (zh) * 2017-07-16 2017-12-29 北京工业大学 一种石墨烯‑二硫化钼侧向异质结光电探测器结构
CN207038541U (zh) * 2017-07-30 2018-02-23 北京蓝木科技有限公司 一种高响应的石墨烯‑二硫化钼柔性光电传感器及光电检测设备
CN110993702A (zh) * 2019-10-25 2020-04-10 深圳大学 基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法

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