WO2021077839A1 - Rapid photodetector based on graphene/molybdenum disulfide/graphene heterojunction, and preparation method therefor - Google Patents

Rapid photodetector based on graphene/molybdenum disulfide/graphene heterojunction, and preparation method therefor Download PDF

Info

Publication number
WO2021077839A1
WO2021077839A1 PCT/CN2020/105587 CN2020105587W WO2021077839A1 WO 2021077839 A1 WO2021077839 A1 WO 2021077839A1 CN 2020105587 W CN2020105587 W CN 2020105587W WO 2021077839 A1 WO2021077839 A1 WO 2021077839A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
graphene
layer
substrate
molybdenum disulfide
Prior art date
Application number
PCT/CN2020/105587
Other languages
French (fr)
Chinese (zh)
Inventor
张晗
曾永宏
王慧德
郭志男
Original Assignee
深圳大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳大学 filed Critical 深圳大学
Publication of WO2021077839A1 publication Critical patent/WO2021077839A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention requires the priority of the prior application of the application number 201911026280.2 with the title of “graphene/molybdenum disulfide/graphene heterojunction-based fast photodetector and its preparation method” filed on October 25, 2019.
  • the content of the earlier application is incorporated into this text by way of introduction.
  • the invention relates to the field of photodetectors, in particular to a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction and a preparation method thereof.
  • a photodetector is a device that converts optical signals into electrical signals.
  • Photoelectric detectors have a wide range of uses, covering various fields of military and national economy. For example, they are mainly used for ray measurement and detection, industrial automatic control, photometric measurement, etc. in the visible and near-infrared bands.
  • Semiconductor photodetectors are widely used in the fields of optical fiber communication, infrared remote sensing, measurement and diagnosis instruments.
  • Conventional semiconductor photodetectors have problems such as low response, slow response time, and low detection sensitivity.
  • traditional photodetectors based on semiconductor materials such as silicon, gallium arsenide, indium gallium arsenide, etc. generally have problems such as narrow response bands and insufficient response sensitivity.
  • the response speed of the molybdenum disulfide photodetector is on the second level, which is increasingly unable to meet the needs of work.
  • the present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • the present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, including a substrate, a first electrode, a second electrode, a first graphene layer, and a molybdenum disulfide layer And a second graphene layer, the first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, and the first electrode and the second electrode A graphene layer, the molybdenum disulfide layer, and the second graphene layer are sequentially stacked in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphene layer It is in contact with the second graphene layer.
  • a graphene/molybdenum disulfide/graphene heterojunction is arranged in the photodetector.
  • the first electrode and the first graphene layer are on one side
  • the electrode, the second electrode and the second graphene layer are the other side electrode. Since graphene has a very small absorption rate of light, it will hardly block the light from reaching the molybdenum disulfide layer and will not affect the absorption of light by the molybdenum disulfide layer.
  • the thickness of the molybdenum disulfide is the line width of the device, that is, the device with this vertical structure
  • the line width can be greatly reduced, the smallest can reach ⁇ 0.6nm, that is, the thickness of a single layer of molybdenum disulfide.
  • the reduction of the photodetector channel means that the time for the photogenerated carriers in the device to reach the electrodes at both ends to form a photocurrent is greatly shortened, which will significantly improve the response speed of the photodetector.
  • the Fermi level of molybdenum disulfide is not completely matched with that of graphene, and photo-generated carriers are easily recombined, so we can apply a voltage to the gate electrode to adjust and optimize the potential between graphene and molybdenum disulfide Therefore, the photo-generated carriers of the device can be effectively separated under the action of the internal potential barrier of the heterojunction, and the photoelectric responsivity of the device is increased. Therefore, the photodetector based on the vertical structure heterojunction of graphene/molybdenum disulfide/graphene provided by the present invention has an ultra-small line width, an ultra-fast response speed, and can theoretically reach the picosecond level.
  • the substrate may be a flexible substrate or a rigid substrate.
  • the material of the substrate includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane.
  • the substrate is a flexible substrate.
  • the substrate may be a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate.
  • the size of the substrate is not limited, and the specific size can be selected according to actual needs.
  • the photodetector when the substrate is a flexible substrate, the photodetector further includes a dielectric layer and a gate, and the dielectric layer and the gate are disposed on the substrate and the first graphene Between the layers, the dielectric layer is disposed between the gate and the first graphene layer.
  • the response speed of the photodetector can also be adjusted by controlling the grid, so that the response speed reaches the picosecond level.
  • the material of the dielectric layer is at least one of aluminum oxide, hafnium dioxide, and boron nitride.
  • the material of the dielectric layer may be, but is not limited to, hexagonal boron nitride.
  • the material of the gate is a metal material.
  • the material of the first electrode and the second electrode includes at least one of gold, silver, platinum, copper, chromium, and titanium.
  • the materials of the first electrode and the second electrode may be the same or different, which is not limited.
  • the first electrode and the second electrode include a connection layer and a metal layer, and the connection layer is in contact with the substrate.
  • the material of the connection layer includes chromium and/or titanium
  • the material of the metal layer includes at least one of gold, silver, platinum and copper.
  • the connecting layer in addition to being used for conducting electricity, the connecting layer also has a certain connection function, so that the metal layer and the substrate are better adhered and connected, and the bonding force between the first electrode and the second electrode and the substrate is improved.
  • the first electrode and the second electrode are both formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate, and the thickness of the chromium layer is 5 nm-10 nm, The thickness of the gold layer is 20 nm-80 nm.
  • the thickness of the first electrode is 25nm-90nm
  • the thickness of the second electrode is 25nm-90nm
  • the distance between the first electrode and the second electrode is 1 ⁇ m-15 ⁇ m. That is, the size of the channel structure formed between the first electrode and the second electrode in the first direction is 1 ⁇ m-15 ⁇ m.
  • the first graphene layer is composed of a single layer of graphene or multiple layers of graphene
  • the molybdenum disulfide layer is composed of a single layer of molybdenum disulfide or multiple layers of molybdenum disulfide
  • the second The graphene layer is composed of a single layer of graphene or multiple layers of graphene.
  • the thickness of the first graphene layer is 0.3nm-15nm
  • the thickness of the molybdenum disulfide layer is 0.6nm-25nm
  • the thickness of the second graphene layer is 0.3nm-15nm.
  • part of the first graphene layer is disposed on the surface of the first electrode, or the first graphene layer is disposed in the channel structure and is close to the first electrode and the second electrode One end of the contact connection. That is to say, when part of the first graphene layer is disposed on the surface of the first electrode, the part of the first graphene layer is directly disposed on the surface of the first electrode, that is, it is perpendicular to the surface of the first electrode.
  • the two are stacked and connected, or when the first graphene layer is arranged in the channel structure and is in contact with the end of the first electrode close to the second electrode, that is, in parallel
  • the first electrode and the first graphene layer are sequentially arranged and connected in contact.
  • part of the second graphene layer is provided on the surface of the second electrode, or the second graphene layer is provided in the channel structure and is close to the first electrode with the second electrode One end of the contact connection. That is to say, when part of the second graphene layer is disposed on the surface of the second electrode, the part of the second graphene layer is directly disposed on the surface of the second electrode, that is, it is perpendicular to the surface of the second electrode.
  • the two are stacked and connected, or when the second graphene layer is arranged in the channel structure and is in contact with the end of the second electrode close to the first electrode, that is, in parallel
  • the second electrode and the second graphene layer are sequentially arranged and connected in contact.
  • part of the first graphene layer is disposed on the surface of the first electrode, and part of the second graphene layer is disposed on the surface of the second electrode.
  • the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as the molybdenum disulfide layer on the substrate.
  • the area ratio of the orthographic projection is 1: (0.2-5).
  • the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as the molybdenum disulfide layer on the substrate.
  • the orthographic projections are completely overlapped, which helps to improve the rapid response.
  • the first graphene layer, the molybdenum disulfide layer and the second graphene layer are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode, and is used in the first electrode and/or the surface of the second electrode.
  • the small cracks and cracks can be repaired to prevent the cracks and cracks from affecting the work of the photodetector, thereby realizing a self-repairing process and increasing the service life of the photodetector.
  • the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is disposed on a side surface of the electrode base close to the first electrode and/or the second electrode.
  • the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer , At least one of polyvinyl alcohol and its derivatives.
  • the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the invention can realize fast-response photodetection, has high sensitivity, and widens its application range.
  • the present invention provides a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, including:
  • a first graphene film, a molybdenum disulfide film, and a second graphene film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphene film and the second graphene film.
  • the second graphene film is contacted and connected to obtain a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • the first graphene film, the molybdenum disulfide film, and the second graphene film may be prepared by, but not limited to, the exfoliation method.
  • the preparation method further includes:
  • a self-healing material is coated on the surface of the first electrode and/or the second electrode to form a self-healing layer; an electrode material is deposited on the self-healing layer to form a self-healing electrode.
  • the preparation method of the fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction provided by the present invention is simple and easy to operate, and can produce a fast response photodetector.
  • the present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • the response speed makes the response speed of the photodetector reach the millisecond level, which is conducive to its wide application.
  • the invention also provides a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, which is simple and easy to operate, and can respond quickly.
  • FIG. 1 is a schematic structural diagram of a fast photodetector based on a graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention.
  • FIG. 2 is a flow chart of a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention.
  • Figure 3 is a photoelectric response test result diagram of the photodetector provided in Example 1 and the comparative example of the present invention.
  • Figure 3(a) is a photoelectric response test result diagram of the photodetector provided in Example 1, and Figure 3(b) ) The photoelectric response test result graph of the photodetector provided by the comparative example.
  • a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction including a substrate 10, a first electrode 20, a second electrode 30, and a first
  • the graphene layer 40, the molybdenum disulfide layer 50 and the second graphene layer 60, the first electrode 20 and the second electrode 30 are arranged at intervals on one side surface of the substrate 10, and a groove is formed between the first electrode 20 and the second electrode 30
  • the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure.
  • the first electrode 20 and the second electrode 30 are connected to the first graphene layer 40 and the second graphene layer 40, respectively.
  • the two graphene layers 60 are in contact and connection.
  • the response speed of the photodetector is significantly improved.
  • the response speed of the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction is on the order of milliseconds.
  • the substrate 10 may be a flexible substrate or a rigid substrate.
  • the material of the substrate 10 includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane.
  • the substrate 10 It is a flexible substrate to improve the flexibility of the photodetector and further broaden the application range of the photodetector. It can be used but not limited to the field of flexible electronics.
  • the substrate 10 may be, but not limited to, a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate.
  • the size of the substrate 10 is not limited, and the specific size can be selected according to actual needs.
  • the thickness of the substrate 10 is 100 ⁇ m-1000 ⁇ m. Further, the thickness of the substrate 10 is 300 ⁇ m-800 ⁇ m.
  • the photodetector when the substrate is a flexible substrate, the photodetector further includes a dielectric layer and a gate, the dielectric layer and the gate are arranged between the substrate and the first graphene layer, and the dielectric layer is arranged on Between the gate and the first graphene layer.
  • the response speed of the photodetector can also be adjusted by controlling the grid, so that the response speed reaches the picosecond level.
  • the material of the dielectric layer is at least one of aluminum oxide, hafnium dioxide, and boron nitride.
  • the material of the dielectric layer can be, but is not limited to, hexagonal boron nitride.
  • the material of the gate is a metal material.
  • the material of the gate may be but not limited to gold.
  • the material of the first electrode 20 and the second electrode 30 includes at least one of gold, silver, platinum, copper, chromium and titanium.
  • the materials of the first electrode 20 and the second electrode 30 may be the same or different, which is not limited.
  • the first electrode 20 and the second electrode 30 include a connection layer and a metal layer, and the connection layer is in contact with the substrate 10.
  • the material of the connection layer includes chromium and/or titanium
  • the material of the metal layer includes at least one of gold, silver, platinum and copper.
  • connection layer in addition to being used for conducting electricity, the connection layer also plays a role in connection, so that the metal layer and the substrate 10 are better adhered and connected, and the bonding force between the first electrode 20 and the second electrode 30 and the substrate 10 is improved.
  • the thickness of the connection layer is 5 nm-10 nm, and the thickness of the metal layer is 20 nm-80 nm. Further, the thickness of the connection layer is 7nm-9nm, and the thickness of the metal layer is 23nm-71nm.
  • both the first electrode 20 and the second electrode 30 are formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate 10, the thickness of the chromium layer is 5nm-10nm, and the thickness of the gold layer is 20nm -80nm.
  • the thickness of the first electrode 20 is 25 nm-90 nm, and the thickness of the second electrode 30 is 25 nm-90 nm. Further, the thickness of the first electrode 20 is 30 nm-80 nm, and the thickness of the second electrode 30 is 30 nm-80 nm.
  • the distance between the first electrode 20 and the second electrode 30 is 1 ⁇ m-15 ⁇ m. That is, the size of the channel structure formed between the first electrode 20 and the second electrode 30 in the first direction is 1 ⁇ m-15 ⁇ m.
  • the first electrode 20 and the second electrode 30 are in contact with the first graphene layer 40 and the second graphene layer 60, respectively, and the first electrode and the second electrode can be used as source and drain.
  • the first graphene layer 40 is composed of a single layer of graphene or multiple layers of graphene
  • the molybdenum disulfide layer 50 is composed of a single layer of molybdenum disulfide or multiple layers of molybdenum disulfide
  • the second graphene layer 60 It is composed of single-layer graphene or multi-layer graphene.
  • the thickness of the first graphene layer 40 is 0.3nm-15nm
  • the thickness of the molybdenum disulfide layer 50 is 0.6nm-25nm
  • the thickness of the second graphene layer 60 is 0.3nm-15nm, which improves The response speed of the photodetector.
  • the thickness of the first graphene layer 40 is 0.3nm-10nm
  • the thickness of the molybdenum disulfide layer 50 is 0.6nm-15nm
  • the thickness of the second graphene layer 60 is 0.3nm-10nm, which further improves the photodetector responding speed.
  • the response speed of the photodetector is Up to picosecond level.
  • the photodetector The response speed reaches picosecond level.
  • the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure, and the first electrode 20 and the second electrode 30 are respectively connected to the first graphene layer 40. It is in contact with the second graphene layer 60.
  • the first electrode 20 is in contact and connection with the first graphene layer 40, and is not in direct contact and connection with the molybdenum disulfide layer 50 and the second graphene layer 60
  • the second electrode 30 is in contact with the second graphene layer.
  • the layer 60 is in contact and connected with the first graphene layer 40 and the molybdenum disulfide layer 50 without direct contact, so as to realize fast response photoelectric detection.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, or the first graphene layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30 connection. That is, when part of the first graphene layer 40 is disposed on the surface of the first electrode 20, the part of the first graphene layer 40 is directly disposed on the surface of the first electrode 20, that is, in a direction perpendicular to the surface of the substrate 10 , The two are stacked and connected, or when the first graphene layer 40 is arranged in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, that is, in a direction parallel to the surface of the substrate 10, the first graphene layer 40 The electrodes 20 and the first graphene layer 40 are arranged in sequence and connected in contact.
  • a part of the second graphene layer 60 is disposed on the surface of the second electrode 30, or the second graphene layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20 connection.
  • the part of the second graphene layer 60 is directly provided on the surface of the second electrode 30, that is, in a direction perpendicular to the surface of the substrate 10 .
  • the two are stacked and connected, or when the second graphene layer 60 is arranged in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, that is, in a direction parallel to the surface of the substrate 10, the second graphene layer 60
  • the electrodes 30 and the second graphene layer 60 are arranged in sequence and connected in contact.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30.
  • the first graphene layer The contact area between 40 and the surface of the first electrode 20 is large, and the contact area between the second graphene layer 60 and the surface of the second electrode 30 is large, which is more conducive to improving the responsiveness of the photodetector.
  • the total thickness of the first electrode 20, the first graphene layer 40 and the molybdenum disulfide layer 50 is equal to the thickness of the second electrode 30 layer, thereby improving the stability of the overall structure.
  • the orthographic projection of the first graphene layer 40 on the surface of the first electrode 20 accounts for 10%-40% of the surface area of the first electrode 20, and the orthographic projection of the second graphene layer 60 on the surface of the second electrode 30 accounts for the first 10%-40% of the surface area of the second electrode 30 further improves the rapid response of the photodetector.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, part of the first graphene layer 40 is in contact with the substrate 10, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30. At this time, the surface of the first graphene layer 40 is not parallel to the surface of the substrate 10 and is arranged obliquely.
  • the thickness of the first electrode 20 is on the order of nanometers.
  • the length of the first graphene layer 40 is on the order of micrometers.
  • the degree of tilt can be ignored.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20
  • part of the second graphene layer 60 is disposed on the surface of the second electrode 30, and part of the second graphene layer 60 is in contact with the substrate 10. .
  • the surface of the second graphene layer 60 is not parallel to the surface of the substrate 10, and is arranged obliquely
  • the thickness of the second electrode 30 is nanometers
  • the length of the second graphene layer 60 is micrometers
  • the length of the second graphene layer 60 is micrometers.
  • the degree of tilt can be ignored.
  • the first graphene layer 40 when the first graphene layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, the first graphene layer 40 and the molybdenum disulfide layer
  • the total thickness of 50 is equal to the thickness of the second electrode 30 layer, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30, thereby improving the stability of the overall structure.
  • the second graphene layer 60 when the second graphene layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, the second graphene layer 60 and the molybdenum disulfide layer
  • the total thickness of 50 is equal to the thickness of the first electrode 20 layer, and part of the first graphene layer 40 is disposed on the surface of the first electrode 20, thereby improving the stability of the overall structure.
  • the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure, including the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer.
  • the olefin layer 60 is sequentially stacked and arranged in the channel structure.
  • the first graphene layer 40 is closer to the substrate 10 than the molybdenum disulfide layer 50 and the second graphene layer 60, or the second graphene layer 60 is closer to the substrate 10 than the first graphene layer 60.
  • the olefin layer 40 and the molybdenum disulfide layer 50 are closer to the substrate 10.
  • the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the area where the molybdenum disulfide layer 50 is on the substrate 10
  • the ratio of the orthographic projection area is 1: (0.2-5).
  • the ratio of the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 to the area of the orthographic projection of the molybdenum disulfide layer 50 on the substrate 10 is 1: (1-3). Furthermore, the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is compared with the area of the orthographic projection of the molybdenum disulfide layer 50 on the substrate 10 It is 1:(1-1.5), which is more conducive to photodetection, while reducing dark current and saving graphene materials.
  • the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the molybdenum disulfide layer 50 on the substrate 10.
  • the ratio of the orthographic projection area is 1:1.
  • the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the area where the molybdenum disulfide layer 50 is on the substrate 10
  • the orthographic projections are completely overlapped, improving fast response.
  • the first graphene layer 40, the molybdenum disulfide layer 50 and the second graphene layer 60 are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
  • the channel structure includes the area between the first electrode 10 and the second electrode 20, and also includes the space above the area. That is to say, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 may be laminated and disposed in the area between the first electrode 10 and the second electrode 20, or may be disposed in the first electrode 10 and Above the area between the second electrodes 20. In an embodiment of the present invention, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are stacked in the region between the first electrode 10 and the second electrode 20.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode 20 and/or the second electrode 30.
  • the self-healing electrode is arranged on the surface of the first electrode 20 and/or the second electrode 30, and is used to prevent the occurrence of small cracks and cracks in the first electrode 20 and/or the second electrode 30. , The cracks are repaired to avoid the occurrence of cracks and cracks from affecting the work of the photoelectric detector, thereby realizing the self-repairing process, and improving the service life of the photoelectric detector.
  • the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is arranged on a side surface of the electrode base close to the first electrode and/or the second electrode.
  • a self-healing layer is provided on one surface of the electrode substrate.
  • a self-repairing layer is provided on a surface portion of the electrode substrate.
  • the orthographic projection of the self-healing layer on the surface of the electrode substrate accounts for 20%-70% of the surface area of the electrode substrate.
  • the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer, poly At least one of vinyl alcohol and its derivatives.
  • the material of the self-healing layer may be, but is not limited to, long-chain carbonylation modified polyurethane.
  • the material of the electrode substrate includes at least one of gold, silver, platinum, copper, chromium and titanium.
  • the electrode base includes an electrode connection layer and an electrode metal layer, and the electrode connection layer is in contact with the self-healing layer.
  • the material of the electrode connection layer includes chromium and/or titanium, and the material of the electrode metal layer includes at least one of gold, silver, platinum and copper.
  • the electrode connection layer not only serves for conduction, but also has a certain connection function, so that the electrode metal layer and the self-healing layer are better adhered and connected, and the bonding force between the electrode substrate and the self-healing layer is improved.
  • the electrode substrate is formed by stacking a chromium layer and a gold layer.
  • FIG. 2 is a flowchart of a method for manufacturing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention, including:
  • S110 Provide a substrate, deposit electrode material on one side surface of the substrate to form a first electrode and a second electrode spaced apart, wherein a channel structure is formed between the first electrode and the second electrode.
  • the electrode material includes at least one of gold, silver, platinum, copper, chromium, and titanium.
  • the materials of the first electrode and the second electrode may be the same or different, which is not limited.
  • the electrode material is deposited by evaporation, sputtering or ion plating.
  • the substrate is pasted on a precision silicon-based mask with electrode patterns, and then placed in an electron beam evaporator to evaporate electrode materials to obtain a substrate with blank electrode patterns. The selection of the substrate, the first electrode and the second electrode are as described above, and will not be repeated here.
  • S120 Laminating a first graphene film, a molybdenum disulfide film, and a second graphene film in the channel structure in sequence, and the first electrode and the second electrode are respectively connected to the first graphene film It is connected in contact with the second graphene film to obtain a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
  • a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction includes a substrate, a first electrode, a second electrode, a first graphene layer, a molybdenum disulfide layer, and a second graphene layer, The first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, and the first graphene layer, the molybdenum disulfide layer and the second graphene layer are sequentially stacked on In the channel structure, the first electrode and the second electrode are respectively in contact with the first graphene layer and the second graphene layer.
  • the first graphene film, the molybdenum disulfide film, and the second graphene film correspond to the first graphene layer, the molybdenum disulfide layer, and the second graphene layer in sequence.
  • the first graphene layer, the molybdenum disulfide layer, and the second graphene layer The selection of the two graphene layers is as described above, and will not be repeated here.
  • the first graphene film, the molybdenum disulfide film, and the second graphene film may be prepared by a lift-off method, but are not limited to.
  • the preparation method further includes: coating a self-healing material on the surface of the first electrode and/or the second electrode to form a self-healing layer; depositing electrode material on the self-healing layer to form a self-healing electrode .
  • the preparation process may be performed after forming the first electrode and the second electrode, or after forming at least one of the first graphene layer, the molybdenum disulfide layer, and the second graphene layer, which is not limited.
  • the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the present invention solves the response of the existing photodetector by setting the graphene/molybdenum disulfide/graphene heterojunction in the photodetector
  • the problem of slow speed makes the response speed of the photodetector reach the millisecond level, which significantly improves the response speed of the photodetector, which is conducive to its wide application.
  • the preparation method of the fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction provided by the invention is simple and easy to operate, and can realize a fast response photodetector.
  • the polyethylene terephthalate (PET) substrate was cut into 1 ⁇ 1cm 2 size, the silicon-based mask with the electrode shape was fixed on the PET substrate, and the chromium layer was successively evaporated by the method of thermal evaporation And the gold layer, where the thickness of the chromium layer is 5nm, the thickness of the gold layer is 40nm, and finally the PET substrate is taken out to obtain a flexible PET substrate with the first electrode and the second electrode arranged at intervals, the first electrode and the second electrode The thickness is 45nm, and a channel structure is formed between the first electrode and the second electrode.
  • PET polyethylene terephthalate
  • the first graphene film, the molybdenum disulfide film, and the second graphene film are sequentially stacked and arranged in the channel structure to obtain graphene/molybdenum disulfide/ Graphene heterojunction, part of the first graphene film is set on the surface of the first electrode, part of the second graphene film is set on the surface of the second electrode, the thickness of the first graphene film is 10nm, and the thickness of the molybdenum disulfide film is 15nm , The thickness of the second graphene film is 10nm, that is, a fast photodetector based on graphene/molybdenum
  • the substrate is taken out to obtain a polydimethylsiloxane substrate with a first electrode and a second electrode spaced apart.
  • the thickness of the first electrode and the second electrode is 60nm, and a channel is formed between the first electrode and the second electrode structure.
  • the thickness of the first graphene film is 8nm
  • the thickness of the molybdenum disulfide film is 18nm
  • the second graphene film is The thickness of the graphene film is 12nm.
  • the first graphene film, the molybdenum disulfide film and the second graphene film are stacked in the channel structure in order to obtain a graphene/molybdenum disulfide/graphene heterojunction, and the first electrode
  • the second electrode is in contact with the first graphene film and the second graphene film respectively, and a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction is prepared.
  • the polyethylene terephthalate (PET) substrate was cut into 1 ⁇ 1cm 2 size, the silicon-based mask with the electrode shape was fixed on the PET substrate, and the chromium layer was successively evaporated by the method of thermal evaporation And the gold layer, where the thickness of the chromium layer is 5nm, the thickness of the gold layer is 40nm, and finally the PET substrate is taken out to obtain a flexible PET substrate with the first electrode and the second electrode arranged at intervals, the first electrode and the second electrode The thickness is 45nm, and a channel structure is formed between the first electrode and the second electrode.
  • PET polyethylene terephthalate
  • the molybdenum disulfide film is arranged in the channel structure and is in contact with the first electrode and the second electrode.
  • the thickness of the molybdenum disulfide film is 15nm, that is, the photoelectricity based on molybdenum disulfide is prepared. detector.
  • the photodetectors prepared in Example 1 and the comparative example were placed on the probe platform matched with the semiconductor characteristic analyzer, and the accurate position of the device on the flexible substrate was found through the matched CCD imaging system.
  • the two probes matched with the probe station are selected to respectively contact the first electrode and the second electrode of the device.
  • Open the semiconductor characteristic analyzer test software which is set as the drain probe to select the voltage bias mode, the fixed bias is 1V, and the other metal probe is the source, and the voltage is set to 0V.
  • Figure 3 is the photoelectric response of the photodetector provided in Example 1.
  • Test result graph Figure 3(b) is the photoelectric response test result graph of the photodetector provided by the comparative example.
  • the photodetector provided in Example 1 has a response time of 0.13s from no light to light, and a response time of 0.06s from no light to light. The response speed is very fast, reaching the millisecond level.
  • the provided photodetector has a response time of 4.5s from no light to light, and a response time of 6.4s from no light to light, and the response speed is slow. Therefore, the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the present invention can significantly improve the response speed of the photodetector and realize a millisecond response.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

A rapid photodetector based on a graphene/molybdenum disulfide/graphene heterojunction, comprising a substrate (10), a first electrode (20), a second electrode (30), a first graphene layer (40), a molybdenum disulfide layer (50), and a second graphene layer (60). The first electrode (20) and the second electrode (30) are arranged at an interval on a surface on one side of the substrate (10), the first electrode (20) and the second electrode (30) forming a channel structure. The first graphene layer (40), the molybdenum disulfide layer (50), and the second graphene layer (60) are sequentially stacked in the channel structure, the first electrode (20) and the second electrode (30) contacting the first graphene layer (40) and the second graphene layer (60) respectively. The provision of the graphene/molybdenum disulfide/graphene heterojunction in the photodetector causes a marked increase in the response speed of the photodetector. The response speed can reach the millisecond scale, aiding in broad application of the photodetector.

Description

基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法Rapid photodetector based on graphene/molybdenum disulfide/graphene heterojunction and preparation method thereof
本发明要求2019年10月25日递交的发明名称为“基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法”的申请号201911026280.2的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。The present invention requires the priority of the prior application of the application number 201911026280.2 with the title of “graphene/molybdenum disulfide/graphene heterojunction-based fast photodetector and its preparation method” filed on October 25, 2019. The content of the earlier application is incorporated into this text by way of introduction.
技术领域Technical field
本发明涉及光探测器领域，具体涉及一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法。The invention relates to the field of photodetectors, in particular to a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction and a preparation method thereof.
背景技术Background technique
光电探测器是将光信号转换成电信号的装置。光电探测器用途广泛，涵盖军事和国民经济的各个领域，如在可见光和近红外波段主要用于射线测量和探测、工业自动控制、光度计量等。半导体光电探测器在光纤通信、红外遥感、测量和诊断仪器等领域广泛运用。常规的半导体光电探测器存在响应度低、响应时间慢、探测灵敏度低等问题。例如，基于硅，砷化镓，铟镓砷等半导体材料的传统光电探测器普遍存在响应波段窄，响应灵敏度不够高等问题。又如，二硫化钼光电探测器的响应速度为秒级，越来越无法满足工作需要。A photodetector is a device that converts optical signals into electrical signals. Photoelectric detectors have a wide range of uses, covering various fields of military and national economy. For example, they are mainly used for ray measurement and detection, industrial automatic control, photometric measurement, etc. in the visible and near-infrared bands. Semiconductor photodetectors are widely used in the fields of optical fiber communication, infrared remote sensing, measurement and diagnosis instruments. Conventional semiconductor photodetectors have problems such as low response, slow response time, and low detection sensitivity. For example, traditional photodetectors based on semiconductor materials such as silicon, gallium arsenide, indium gallium arsenide, etc. generally have problems such as narrow response bands and insufficient response sensitivity. For another example, the response speed of the molybdenum disulfide photodetector is on the second level, which is increasingly unable to meet the needs of work.
因此，进一步开发具有快速光响应的光电探测器对其发展具有重要意义。Therefore, further development of photodetectors with fast light response is of great significance to its development.
发明内容Summary of the invention
为解决上述问题，本发明提供了一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器，通过在光电探测器中设置石墨烯/二硫化钼/石墨烯异质结，显著提高光电探测器的响应速度，有利于其广泛应用。In order to solve the above problems, the present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction. By setting the graphene/molybdenum disulfide/graphene heterojunction in the photodetector, Significantly improve the response speed of the photodetector, which is conducive to its wide application.
第一方面，本发明提供了一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器，包括基底、第一电极、第二电极、第一石墨烯层、二硫化钼层和第二石墨烯层，所述第一电极和所述第二电极间隔设置在所述基底的一侧表面，所述第一电极和所述第二电极之间形成沟道结构，所述第一石墨烯层、所述二硫化钼层和所述第二石墨烯层依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯层和所述第二石墨烯层接触连接。In the first aspect, the present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, including a substrate, a first electrode, a second electrode, a first graphene layer, and a molybdenum disulfide layer And a second graphene layer, the first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, and the first electrode and the second electrode A graphene layer, the molybdenum disulfide layer, and the second graphene layer are sequentially stacked in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphene layer It is in contact with the second graphene layer.
在本发明中，在光电探测器中设置石墨烯/二硫化钼/石墨烯异质结，在这种垂直结构的异质结光电探测器中，第一电极和第一石墨烯层为一侧电极，第二电极和第二石墨烯层为另一侧电极，由于石墨烯对光的吸收率非常小，几乎不会阻挡光到达二硫化钼层，不会影响二硫化钼层对光的吸收，此时石墨烯起到了透明电极的作用；另一方面，缩小器件的沟道长度(即“线宽”)一直是半导体芯片设计的重要方向，降低线宽的主要目的是提高半导体芯片的集成度，降低芯片生产成本。但是目前利用紫外光刻、电子束曝光等工艺制作的器件的线宽受限于加工工艺的精度，很难达到10nm以下。因此，我们设计了石墨烯/二硫化钼/石墨烯的垂直三明治结构，基于该结构的光电探测器中，二硫化钼的厚度即为器件的 线宽，也就是说，这种垂直结构的器件的线宽可以被极大地降低，最小可以达到～0.6nm，即单层二硫化钼的厚度。光电探测器沟道的减小对于探测器本身而言意味着器件中的光生载流子到达两端电极形成光电流的时间极大地变短，这将使得光电探测器的响应速度被显著提高。除此之外，二硫化钼的费米能级与石墨烯的不完全匹配，光生载流子容易复合，因此我们可以在栅电极施加一个电压来调节优化石墨烯与二硫化钼之间的势垒，从而使得该器件的光生载流子能够在异质结内部势垒的作用下有效分离，增大器件光电响应度。因此，本发明提供的基于石墨烯/二硫化钼/石墨烯的垂直结构异质结的光电探测器具有超小线宽、超快的响应速度，理论上可达到皮秒级。In the present invention, a graphene/molybdenum disulfide/graphene heterojunction is arranged in the photodetector. In this vertical structure of the heterojunction photodetector, the first electrode and the first graphene layer are on one side The electrode, the second electrode and the second graphene layer are the other side electrode. Since graphene has a very small absorption rate of light, it will hardly block the light from reaching the molybdenum disulfide layer and will not affect the absorption of light by the molybdenum disulfide layer. At this time, graphene plays the role of a transparent electrode; on the other hand, reducing the channel length (ie "line width") of the device has always been an important direction in the design of semiconductor chips, and the main purpose of reducing the line width is to improve the integration of semiconductor chips. Degree, reduce the cost of chip production. However, the line width of devices currently manufactured by processes such as ultraviolet lithography and electron beam exposure is limited by the accuracy of the processing technology, and it is difficult to reach below 10 nm. Therefore, we designed a vertical sandwich structure of graphene/molybdenum disulfide/graphene. In the photodetector based on this structure, the thickness of the molybdenum disulfide is the line width of the device, that is, the device with this vertical structure The line width can be greatly reduced, the smallest can reach ~ 0.6nm, that is, the thickness of a single layer of molybdenum disulfide. For the detector itself, the reduction of the photodetector channel means that the time for the photogenerated carriers in the device to reach the electrodes at both ends to form a photocurrent is greatly shortened, which will significantly improve the response speed of the photodetector. In addition, the Fermi level of molybdenum disulfide is not completely matched with that of graphene, and photo-generated carriers are easily recombined, so we can apply a voltage to the gate electrode to adjust and optimize the potential between graphene and molybdenum disulfide Therefore, the photo-generated carriers of the device can be effectively separated under the action of the internal potential barrier of the heterojunction, and the photoelectric responsivity of the device is increased. Therefore, the photodetector based on the vertical structure heterojunction of graphene/molybdenum disulfide/graphene provided by the present invention has an ultra-small line width, an ultra-fast response speed, and can theoretically reach the picosecond level.
在本发明中，所述基底可以为柔性基底，也可以为硬质基底。可选的，所述基底的材质包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚二甲基硅氧烷中的至少一种，此时，基底为柔性基底，提高光电探测器的柔性，进一步拓宽光电探测器的应用范围，可以但不限于用于柔性电子领域等。具体的，可以但不限于为所述基底为硅基底、二氧化硅基底、聚对苯二甲酸乙二醇酯基底。在本发明中，对所述基底的尺寸不作限定，具体的可以根据实际需要进行选择。In the present invention, the substrate may be a flexible substrate or a rigid substrate. Optionally, the material of the substrate includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane. In this case, the substrate is a flexible substrate. Improve the flexibility of the photodetector, further broaden the application range of the photodetector, but not limited to the field of flexible electronics. Specifically, but not limited to, the substrate may be a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate. In the present invention, the size of the substrate is not limited, and the specific size can be selected according to actual needs.
在本发明中，当所述基底为柔性基底时，所述光电探测器还包括介电层和栅极，所述介电层和所述栅极设置在所述基底和所述第一石墨烯层之间，所述介电层设置在所述栅极和所述第一石墨烯层之间。此时，还可以通过控制栅极调节光电探测器的响应速度，使得响应速度达到皮秒级。可选的，所述介电层的材质为氧化铝、二氧化铪、氮化硼中的至少一种。具体的，所述介电层的材质可以但不限于为六方氮化硼。可选的，所述栅极的材质为金属材料。In the present invention, when the substrate is a flexible substrate, the photodetector further includes a dielectric layer and a gate, and the dielectric layer and the gate are disposed on the substrate and the first graphene Between the layers, the dielectric layer is disposed between the gate and the first graphene layer. At this time, the response speed of the photodetector can also be adjusted by controlling the grid, so that the response speed reaches the picosecond level. Optionally, the material of the dielectric layer is at least one of aluminum oxide, hafnium dioxide, and boron nitride. Specifically, the material of the dielectric layer may be, but is not limited to, hexagonal boron nitride. Optionally, the material of the gate is a metal material.
可选的，所述第一电极和所述第二电极的材质包括金、银、铂、铜、铬和钛中的至少一种。在本发明中，所述第一电极和所述第二电极的材质可以相同，也可以不同，对此不作限定。Optionally, the material of the first electrode and the second electrode includes at least one of gold, silver, platinum, copper, chromium, and titanium. In the present invention, the materials of the first electrode and the second electrode may be the same or different, which is not limited.
进一步的，所述第一电极和所述第二电极包括连接层和金属层，所述连接层与所述基底接触。更进一步的，所述连接层的材质包括铬和/或钛，所述金属层的材质包括金、银、铂和铜中的至少一种。在本发明中，连接层除了用于导电，还起到一定的连接作用，使得金属层与基底更好的粘附和连接，提高第一电极和第二电极与基底的结合力。具体的，可以但不限于为所述第一电极和所述第二电极均为铬层和金层层叠形成，所述铬层与所述基底接触，所述铬层的厚度为5nm-10nm，所述金层的厚度为20nm-80nm。Further, the first electrode and the second electrode include a connection layer and a metal layer, and the connection layer is in contact with the substrate. Furthermore, the material of the connection layer includes chromium and/or titanium, and the material of the metal layer includes at least one of gold, silver, platinum and copper. In the present invention, in addition to being used for conducting electricity, the connecting layer also has a certain connection function, so that the metal layer and the substrate are better adhered and connected, and the bonding force between the first electrode and the second electrode and the substrate is improved. Specifically, but not limited to, the first electrode and the second electrode are both formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate, and the thickness of the chromium layer is 5 nm-10 nm, The thickness of the gold layer is 20 nm-80 nm.
可选的，所述第一电极的厚度为25nm-90nm，所述第二电极的厚度为25nm-90nm。Optionally, the thickness of the first electrode is 25nm-90nm, and the thickness of the second electrode is 25nm-90nm.
可选的，所述第一电极和所述第二电极的间距为1μm-15μm。也就是说，所述第一电极和所述第二电极之间形成沟道结构在第一方向上的尺寸为1μm-15μm。Optionally, the distance between the first electrode and the second electrode is 1 μm-15 μm. That is, the size of the channel structure formed between the first electrode and the second electrode in the first direction is 1 μm-15 μm.
在本发明中，所述第一石墨烯层由单层石墨烯组成或多层石墨烯组成，所述二硫化钼层由单层二硫化钼组成或多层二硫化钼组成，所述第二石墨烯层由单层石墨烯组成或多层石墨烯组成。In the present invention, the first graphene layer is composed of a single layer of graphene or multiple layers of graphene, the molybdenum disulfide layer is composed of a single layer of molybdenum disulfide or multiple layers of molybdenum disulfide, and the second The graphene layer is composed of a single layer of graphene or multiple layers of graphene.
可选的，所述第一石墨烯层的厚度为0.3nm-15nm，所述二硫化钼层的厚度为 0.6nm-25nm，所述第二石墨烯层的厚度为0.3nm-15nm。Optionally, the thickness of the first graphene layer is 0.3nm-15nm, the thickness of the molybdenum disulfide layer is 0.6nm-25nm, and the thickness of the second graphene layer is 0.3nm-15nm.
可选的，部分所述第一石墨烯层设置在所述第一电极表面，或所述第一石墨烯层设置在所述沟道结构内并与所述第一电极靠近所述第二电极的一端接触连接。也就是说，当部分所述第一石墨烯层设置在所述第一电极表面时，所述第一石墨烯层的部分是直接设置在所述第一电极的表面，即在垂直于所述基底表面的方向上，两者层叠连接，或当所述第一石墨烯层设置在所述沟道结构内并与所述第一电极靠近所述第二电极的一端接触连接时，即在平行于所述基底表面的方向上，所述第一电极和所述第一石墨烯层依次排布并接触连接。Optionally, part of the first graphene layer is disposed on the surface of the first electrode, or the first graphene layer is disposed in the channel structure and is close to the first electrode and the second electrode One end of the contact connection. That is to say, when part of the first graphene layer is disposed on the surface of the first electrode, the part of the first graphene layer is directly disposed on the surface of the first electrode, that is, it is perpendicular to the surface of the first electrode. In the direction of the substrate surface, the two are stacked and connected, or when the first graphene layer is arranged in the channel structure and is in contact with the end of the first electrode close to the second electrode, that is, in parallel In the direction of the surface of the substrate, the first electrode and the first graphene layer are sequentially arranged and connected in contact.
可选的，部分所述第二石墨烯层设置在所述第二电极表面，或所述第二石墨烯层设置在所述沟道结构内并与所述第二电极靠近所述第一电极的一端接触连接。也就是说，当部分所述第二石墨烯层设置在所述第二电极表面时，所述第二石墨烯层的部分是直接设置在所述第二电极的表面，即在垂直于所述基底表面的方向上，两者层叠连接，或当所述第二石墨烯层设置在所述沟道结构内并与所述第二电极靠近所述第一电极的一端接触连接时，即在平行于所述基底表面的方向上，所述第二电极和所述第二石墨烯层依次排布并接触连接。Optionally, part of the second graphene layer is provided on the surface of the second electrode, or the second graphene layer is provided in the channel structure and is close to the first electrode with the second electrode One end of the contact connection. That is to say, when part of the second graphene layer is disposed on the surface of the second electrode, the part of the second graphene layer is directly disposed on the surface of the second electrode, that is, it is perpendicular to the surface of the second electrode. In the direction of the substrate surface, the two are stacked and connected, or when the second graphene layer is arranged in the channel structure and is in contact with the end of the second electrode close to the first electrode, that is, in parallel In the direction of the surface of the substrate, the second electrode and the second graphene layer are sequentially arranged and connected in contact.
进一步的，部分所述第一石墨烯层设置在所述第一电极表面，部分所述第二石墨烯层设置在所述第二电极表面。Further, part of the first graphene layer is disposed on the surface of the first electrode, and part of the second graphene layer is disposed on the surface of the second electrode.
可选的，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述二硫化钼层在所述基底上的正投影面积比为1：(0.2-5)。此时可以更好地使石墨烯/二硫化钼/石墨烯异质结发挥作用，提高光电探测器的响应速度。Optionally, the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as the molybdenum disulfide layer on the substrate. The area ratio of the orthographic projection is 1: (0.2-5). At this time, the graphene/molybdenum disulfide/graphene heterojunction can be better brought into play, and the response speed of the photodetector can be improved.
可选的，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述二硫化钼层在所述基底上的正投影完全重叠，有利于提高快速响应。Optionally, the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as the molybdenum disulfide layer on the substrate. The orthographic projections are completely overlapped, which helps to improve the rapid response.
在本发明中，所述第一石墨烯层、所述二硫化钼层和所述第二石墨烯层之间通过范德华力连接，形成范德华力异质结，使得光电探测器整体结构稳定。In the present invention, the first graphene layer, the molybdenum disulfide layer and the second graphene layer are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
可选的，所述光电探测器还包括自修复电极，所述自修复电极设置在所述第一电极和/或所述第二电极的表面。Optionally, the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode.
在本发明中，光电探测器还包括自修复电极，所述自修复电极设置在所述第一电极和/或所述第二电极的表面，用于在所述第一电极和/或所述第二电极出现细小裂痕、裂缝时，可以对出现细小裂痕、裂缝进行修复，避免出现的裂痕、裂缝对光电探测器的工作产生影响，进而实现自修复过程，提高了光电探测器的使用寿命。In the present invention, the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode, and is used in the first electrode and/or the surface of the second electrode. When small cracks and cracks appear on the second electrode, the small cracks and cracks can be repaired to prevent the cracks and cracks from affecting the work of the photodetector, thereby realizing a self-repairing process and increasing the service life of the photodetector.
进一步的，所述自修复电极包括电极基体和自修复层，所述自修复层设置在所述电极基体靠近所述第一电极和/或所述第二电极的一侧表面。Further, the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is disposed on a side surface of the electrode base close to the first electrode and/or the second electrode.
更进一步的，所述自修复层的材质包括聚氨酯、环氧树脂、乙烯-醋酸乙烯酯共聚物、聚酰亚胺、聚己内酯、聚乳酸、聚乙醇酸、聚乳酸-羟基乙酸共聚物、聚乙烯醇及其衍生物中的至少一种。Furthermore, the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer , At least one of polyvinyl alcohol and its derivatives.
本发明提供的基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器可以实现快速响应的光电探测，灵敏度高，拓宽其应用范围。The fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the invention can realize fast-response photodetection, has high sensitivity, and widens its application range.
第二方面，本发明提供了一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的制备方法，包括：In the second aspect, the present invention provides a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, including:
提供基底，在所述基底一侧表面沉积电极材料，形成间隔设置的第一电极和第二电极，其中，所述第一电极和所述第二电极之间形成沟道结构；Providing a substrate, depositing electrode material on one side surface of the substrate to form a first electrode and a second electrode arranged at intervals, wherein a channel structure is formed between the first electrode and the second electrode;
将第一石墨烯薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯薄膜和所述第二石墨烯薄膜接触连接，得到基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器。A first graphene film, a molybdenum disulfide film, and a second graphene film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphene film and the second graphene film. The second graphene film is contacted and connected to obtain a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
在本发明中，可以但不限于为所述第一石墨烯薄膜、所述二硫化钼薄膜和所述第二石墨烯薄膜通过剥离法制备得到。In the present invention, the first graphene film, the molybdenum disulfide film, and the second graphene film may be prepared by, but not limited to, the exfoliation method.
可选的，所述制备方法还包括：Optionally, the preparation method further includes:
将自修复材料涂覆在所述第一电极和/或所述第二电极的表面，形成自修复层；在所述自修复层上沉积电极材料，形成自修复电极。A self-healing material is coated on the surface of the first electrode and/or the second electrode to form a self-healing layer; an electrode material is deposited on the self-healing layer to form a self-healing electrode.
本发明提供的基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的制备方法简单易操作，可以制得快速响应的光电探测器。The preparation method of the fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction provided by the present invention is simple and easy to operate, and can produce a fast response photodetector.
本发明的有益效果：The beneficial effects of the present invention:
本发明提供了一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器，通过在光电探测器中设置石墨烯/二硫化钼/石墨烯异质结，提高光电探测器的响应速度，使得光电探测器的响应速度达到毫秒级，有利于其广泛应用。本发明还提供了一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的制备方法，该方法简单易操作，可以快速响应的光电探测器。The present invention provides a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction. By setting the graphene/molybdenum disulfide/graphene heterojunction in the photodetector, the performance of the photodetector is improved. The response speed makes the response speed of the photodetector reach the millisecond level, which is conducive to its wide application. The invention also provides a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, which is simple and easy to operate, and can respond quickly.
附图说明Description of the drawings
图1为本发明一实施例提供的一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的结构示意图。FIG. 1 is a schematic structural diagram of a fast photodetector based on a graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention.
图2为本发明一实施例提供的一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的制备方法流程图。2 is a flow chart of a method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention.
图3为本发明实施例1和对比例提供的光电探测器的光电响应测试结果图，图3中(a)为实施例1提供的光电探测器的光电响应测试结果图，图3中(b)为对比例提供的光电探测器的光电响应测试结果图。Figure 3 is a photoelectric response test result diagram of the photodetector provided in Example 1 and the comparative example of the present invention. Figure 3(a) is a photoelectric response test result diagram of the photodetector provided in Example 1, and Figure 3(b) ) The photoelectric response test result graph of the photodetector provided by the comparative example.
具体实施方式Detailed ways
以下所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。The following are the preferred embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications are also considered This is the protection scope of the present invention.
请参照图1，为本发明一实施例提供了一种基于石墨烯/二硫化钼/石墨烯异质结的快速 光电探测器，包括基底10、第一电极20、第二电极30、第一石墨烯层40、二硫化钼层50和第二石墨烯层60，第一电极20和第二电极30间隔设置在基底10的一侧表面，第一电极20和第二电极30之间形成沟道结构，第一石墨烯层40、二硫化钼层50和第二石墨烯层60依次层叠设置在沟道结构内，第一电极20和第二电极30分别与第一石墨烯层40和第二石墨烯层60接触连接。Please refer to FIG. 1, for an embodiment of the present invention, a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction is provided, including a substrate 10, a first electrode 20, a second electrode 30, and a first The graphene layer 40, the molybdenum disulfide layer 50 and the second graphene layer 60, the first electrode 20 and the second electrode 30 are arranged at intervals on one side surface of the substrate 10, and a groove is formed between the first electrode 20 and the second electrode 30 In the channel structure, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure. The first electrode 20 and the second electrode 30 are connected to the first graphene layer 40 and the second graphene layer 40, respectively. The two graphene layers 60 are in contact and connection.
在本发明中，通过在光电探测器中设置石墨烯/二硫化钼/石墨烯异质结，使得光电探测器的响应速度显著提高。在本发明中，基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的响应速度为毫秒级。In the present invention, by providing a graphene/molybdenum disulfide/graphene heterojunction in the photodetector, the response speed of the photodetector is significantly improved. In the present invention, the response speed of the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction is on the order of milliseconds.
在本发明中，基底10可以为柔性基底，也可以为硬质基底。在本发明一实施方式中，基底10的材质包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚二甲基硅氧烷中的至少一种，此时，基底10为柔性基底，提高光电探测器的柔性，进一步拓宽光电探测器的应用范围，可以但不限于用于柔性电子领域等。具体的，可以但不限于为基底10为硅基底、二氧化硅基底、聚对苯二甲酸乙二醇酯基底。在本发明中，对基底10的尺寸不作限定，具体的可以根据实际需要进行选择。可选的，基底10的厚度为100μm-1000μm。进一步的，基底10的厚度为300μm-800μm。In the present invention, the substrate 10 may be a flexible substrate or a rigid substrate. In one embodiment of the present invention, the material of the substrate 10 includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane. In this case, the substrate 10 It is a flexible substrate to improve the flexibility of the photodetector and further broaden the application range of the photodetector. It can be used but not limited to the field of flexible electronics. Specifically, the substrate 10 may be, but not limited to, a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate. In the present invention, the size of the substrate 10 is not limited, and the specific size can be selected according to actual needs. Optionally, the thickness of the substrate 10 is 100 μm-1000 μm. Further, the thickness of the substrate 10 is 300 μm-800 μm.
在本发明一实施方式中，当基底为柔性基底时，光电探测器还包括介电层和栅极，介电层和栅极设置在基底和第一石墨烯层之间，介电层设置在栅极和第一石墨烯层之间。此时，还可以通过控制栅极调节光电探测器的响应速度，使得响应速度达到皮秒级。可选的，介电层的材质为氧化铝、二氧化铪、氮化硼中的至少一种。具体的，介电层的材质可以但不限于为六方氮化硼。可选的，栅极的材质为金属材料。具体的，栅极的材质可以但不限于为金。In an embodiment of the present invention, when the substrate is a flexible substrate, the photodetector further includes a dielectric layer and a gate, the dielectric layer and the gate are arranged between the substrate and the first graphene layer, and the dielectric layer is arranged on Between the gate and the first graphene layer. At this time, the response speed of the photodetector can also be adjusted by controlling the grid, so that the response speed reaches the picosecond level. Optionally, the material of the dielectric layer is at least one of aluminum oxide, hafnium dioxide, and boron nitride. Specifically, the material of the dielectric layer can be, but is not limited to, hexagonal boron nitride. Optionally, the material of the gate is a metal material. Specifically, the material of the gate may be but not limited to gold.
在本发明一实施方式中，第一电极20和第二电极30的材质包括金、银、铂、铜、铬和钛中的至少一种。在本发明中，第一电极20和第二电极30的材质可以相同，也可以不同，对此不作限定。进一步的，第一电极20和第二电极30包括连接层和金属层，连接层与基底10接触。更进一步的，连接层的材质包括铬和/或钛，金属层的材质包括金、银、铂和铜中的至少一种。在本发明中，连接层除了用于导电，还起到一定的连接作用，使得金属层与基底10更好的粘附和连接，提高第一电极20和第二电极30与基底10的结合力。可选的，连接层的厚度为5nm-10nm，金属层的厚度为20nm-80nm。进一步的，连接层的厚度为7nm-9nm，金属层的厚度为23nm-71nm。在本发明一具体实施例中，第一电极20和第二电极30均为铬层和金层层叠形成，铬层与基底10接触，铬层的厚度为5nm-10nm，金层的厚度为20nm-80nm。In an embodiment of the present invention, the material of the first electrode 20 and the second electrode 30 includes at least one of gold, silver, platinum, copper, chromium and titanium. In the present invention, the materials of the first electrode 20 and the second electrode 30 may be the same or different, which is not limited. Further, the first electrode 20 and the second electrode 30 include a connection layer and a metal layer, and the connection layer is in contact with the substrate 10. Furthermore, the material of the connection layer includes chromium and/or titanium, and the material of the metal layer includes at least one of gold, silver, platinum and copper. In the present invention, in addition to being used for conducting electricity, the connection layer also plays a role in connection, so that the metal layer and the substrate 10 are better adhered and connected, and the bonding force between the first electrode 20 and the second electrode 30 and the substrate 10 is improved. . Optionally, the thickness of the connection layer is 5 nm-10 nm, and the thickness of the metal layer is 20 nm-80 nm. Further, the thickness of the connection layer is 7nm-9nm, and the thickness of the metal layer is 23nm-71nm. In a specific embodiment of the present invention, both the first electrode 20 and the second electrode 30 are formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate 10, the thickness of the chromium layer is 5nm-10nm, and the thickness of the gold layer is 20nm -80nm.
在本发明一实施方式中，第一电极20的厚度为25nm-90nm，第二电极30的厚度为25nm-90nm。进一步的，第一电极20的厚度为30nm-80nm，第二电极30的厚度为30nm-80nm。In one embodiment of the present invention, the thickness of the first electrode 20 is 25 nm-90 nm, and the thickness of the second electrode 30 is 25 nm-90 nm. Further, the thickness of the first electrode 20 is 30 nm-80 nm, and the thickness of the second electrode 30 is 30 nm-80 nm.
在本发明一实施方式中，第一电极20和第二电极30的间距为1μm-15μm。也就是说，第一电极20和第二电极30之间形成沟道结构在第一方向上的尺寸为1μm-15μm。In an embodiment of the present invention, the distance between the first electrode 20 and the second electrode 30 is 1 μm-15 μm. That is, the size of the channel structure formed between the first electrode 20 and the second electrode 30 in the first direction is 1 μm-15 μm.
在本发明中，第一电极20和第二电极30分别与第一石墨烯层40和第二石墨烯层60 接触连接，第一电极和第二电极可以作为源漏极。In the present invention, the first electrode 20 and the second electrode 30 are in contact with the first graphene layer 40 and the second graphene layer 60, respectively, and the first electrode and the second electrode can be used as source and drain.
在本发明中，第一石墨烯层40由单层石墨烯组成或多层石墨烯组成，二硫化钼层50由单层二硫化钼组成或多层二硫化钼组成，第二石墨烯层60由单层石墨烯组成或多层石墨烯组成。In the present invention, the first graphene layer 40 is composed of a single layer of graphene or multiple layers of graphene, the molybdenum disulfide layer 50 is composed of a single layer of molybdenum disulfide or multiple layers of molybdenum disulfide, and the second graphene layer 60 It is composed of single-layer graphene or multi-layer graphene.
在本发明一实施方式中，第一石墨烯层40的厚度为0.3nm-15nm，二硫化钼层50的厚度为0.6nm-25nm，第二石墨烯层60的厚度为0.3nm-15nm，提高光电探测器的响应速度。进一步的，第一石墨烯层40的厚度为0.3nm-10nm，二硫化钼层50的厚度为0.6nm-15nm，第二石墨烯层60的厚度为0.3nm-10nm，进一步提高光电探测器的响应速度。In one embodiment of the present invention, the thickness of the first graphene layer 40 is 0.3nm-15nm, the thickness of the molybdenum disulfide layer 50 is 0.6nm-25nm, and the thickness of the second graphene layer 60 is 0.3nm-15nm, which improves The response speed of the photodetector. Further, the thickness of the first graphene layer 40 is 0.3nm-10nm, the thickness of the molybdenum disulfide layer 50 is 0.6nm-15nm, and the thickness of the second graphene layer 60 is 0.3nm-10nm, which further improves the photodetector responding speed.
在本发明一实施例中，第一石墨烯层40的厚度小于1.5nm，二硫化钼层50的厚度小于1.5nm，第二石墨烯层60的厚度小于1.5nm时，光电探测器的响应速度可达皮秒级。具体的，可以但不限于为第一石墨烯层40的厚度为0.3nm，二硫化钼层50的厚度为0.6nm，第二石墨烯层60的厚度为0.3nm时，所述光电探测器的响应速度达皮秒级。In an embodiment of the present invention, when the thickness of the first graphene layer 40 is less than 1.5 nm, the thickness of the molybdenum disulfide layer 50 is less than 1.5 nm, and the thickness of the second graphene layer 60 is less than 1.5 nm, the response speed of the photodetector is Up to picosecond level. Specifically, when the thickness of the first graphene layer 40 is 0.3 nm, the thickness of the molybdenum disulfide layer 50 is 0.6 nm, and the thickness of the second graphene layer 60 is 0.3 nm, the photodetector The response speed reaches picosecond level.
在本发明中，第一石墨烯层40、二硫化钼层50和第二石墨烯层60依次层叠设置在沟道结构内，第一电极20和第二电极30分别与第一石墨烯层40和第二石墨烯层60接触连接。在本发明一具体实施例中，第一电极20与第一石墨烯层40接触连接，与二硫化钼层50和第二石墨烯层60不直接接触连接，第二电极30与第二石墨烯层60接触连接，与第一石墨烯层40和二硫化钼层50不直接接触连接，实现快速响应的光电探测。In the present invention, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure, and the first electrode 20 and the second electrode 30 are respectively connected to the first graphene layer 40. It is in contact with the second graphene layer 60. In a specific embodiment of the present invention, the first electrode 20 is in contact and connection with the first graphene layer 40, and is not in direct contact and connection with the molybdenum disulfide layer 50 and the second graphene layer 60, and the second electrode 30 is in contact with the second graphene layer. The layer 60 is in contact and connected with the first graphene layer 40 and the molybdenum disulfide layer 50 without direct contact, so as to realize fast response photoelectric detection.
在本发明一实施方式中，部分第一石墨烯层40设置在第一电极20表面，或第一石墨烯层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接。也就是说，当部分第一石墨烯层40设置在第一电极20表面时，第一石墨烯层40的部分是直接设置在第一电极20的表面，即在垂直于基底10表面的方向上，两者层叠连接，或当第一石墨烯层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接时，即在平行于基底10表面的方向上，第一电极20和第一石墨烯层40依次排布并接触连接。In an embodiment of the present invention, part of the first graphene layer 40 is disposed on the surface of the first electrode 20, or the first graphene layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30 connection. That is, when part of the first graphene layer 40 is disposed on the surface of the first electrode 20, the part of the first graphene layer 40 is directly disposed on the surface of the first electrode 20, that is, in a direction perpendicular to the surface of the substrate 10 , The two are stacked and connected, or when the first graphene layer 40 is arranged in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, that is, in a direction parallel to the surface of the substrate 10, the first graphene layer 40 The electrodes 20 and the first graphene layer 40 are arranged in sequence and connected in contact.
在本发明一实施方式中，部分第二石墨烯层60设置在第二电极30表面，或第二石墨烯层60设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接。也就是说，当部分第二石墨烯层60设置在第二电极30表面时，第二石墨烯层60的部分是直接设置在第二电极30的表面，即在垂直于基底10表面的方向上，两者层叠连接，或当第二石墨烯层60设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接时，即在平行于基底10表面的方向上，第二电极30和第二石墨烯层60依次排布并接触连接。In an embodiment of the present invention, a part of the second graphene layer 60 is disposed on the surface of the second electrode 30, or the second graphene layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20 connection. That is, when part of the second graphene layer 60 is provided on the surface of the second electrode 30, the part of the second graphene layer 60 is directly provided on the surface of the second electrode 30, that is, in a direction perpendicular to the surface of the substrate 10 , The two are stacked and connected, or when the second graphene layer 60 is arranged in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, that is, in a direction parallel to the surface of the substrate 10, the second graphene layer 60 The electrodes 30 and the second graphene layer 60 are arranged in sequence and connected in contact.
在本发明一具体实施例中，如图1所示，部分第一石墨烯层40设置在第一电极20表面，部分第二石墨烯层60设置在第二电极30表面，第一石墨烯层40与第一电极20表面的接触面积大，第二石墨烯层60与第二电极30表面的接触面积大，更有利于提高光电探测器的响应性。可选的，第一电极20、第一石墨烯层40和二硫化钼层50的总厚度等于第二电极30层的厚度，进而提高整体结构的稳定性。可选的，第一石墨烯层40在第一电极20表面的正投影占第一电极20表面面积的10％-40％，第二石墨烯层60在第二电极30表面的正投影占第二电极30表面面积的10％-40％，进一步提高光电探测器的快速响应。在 本发明一实施例中，部分第一石墨烯层40设置在第一电极20表面，部分第一石墨烯层40与基底10接触，部分第二石墨烯层60设置在第二电极30表面。此时，第一石墨烯层40表面与基底10表面不平行，为倾斜设置，第一电极20的厚度为纳米级，第一石墨烯层40的长度为微米级，第一石墨烯层40的倾斜程度可以忽略。在本发明另一实施例中，部分第一石墨烯层40设置在第一电极20表面，部分第二石墨烯层60设置在第二电极30表面，部分第二石墨烯层60与基底10接触。此时，第二石墨烯层60表面与基底10表面不平行，为倾斜设置，第二电极30的厚度为纳米级，第二石墨烯层60的长度为微米级，第二石墨烯层60的倾斜程度可以忽略。In a specific embodiment of the present invention, as shown in FIG. 1, part of the first graphene layer 40 is disposed on the surface of the first electrode 20, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30. The first graphene layer The contact area between 40 and the surface of the first electrode 20 is large, and the contact area between the second graphene layer 60 and the surface of the second electrode 30 is large, which is more conducive to improving the responsiveness of the photodetector. Optionally, the total thickness of the first electrode 20, the first graphene layer 40 and the molybdenum disulfide layer 50 is equal to the thickness of the second electrode 30 layer, thereby improving the stability of the overall structure. Optionally, the orthographic projection of the first graphene layer 40 on the surface of the first electrode 20 accounts for 10%-40% of the surface area of the first electrode 20, and the orthographic projection of the second graphene layer 60 on the surface of the second electrode 30 accounts for the first 10%-40% of the surface area of the second electrode 30 further improves the rapid response of the photodetector. In an embodiment of the present invention, part of the first graphene layer 40 is disposed on the surface of the first electrode 20, part of the first graphene layer 40 is in contact with the substrate 10, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30. At this time, the surface of the first graphene layer 40 is not parallel to the surface of the substrate 10 and is arranged obliquely. The thickness of the first electrode 20 is on the order of nanometers. The length of the first graphene layer 40 is on the order of micrometers. The degree of tilt can be ignored. In another embodiment of the present invention, part of the first graphene layer 40 is disposed on the surface of the first electrode 20, part of the second graphene layer 60 is disposed on the surface of the second electrode 30, and part of the second graphene layer 60 is in contact with the substrate 10. . At this time, the surface of the second graphene layer 60 is not parallel to the surface of the substrate 10, and is arranged obliquely, the thickness of the second electrode 30 is nanometers, the length of the second graphene layer 60 is micrometers, and the length of the second graphene layer 60 is micrometers. The degree of tilt can be ignored.
在本发明一具体实施例中，当第一石墨烯层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接时，第一石墨烯层40和二硫化钼层50的总厚度等于第二电极30层的厚度，部分第二石墨烯层60设置在第二电极30表面，进而提高整体结构的稳定性。In a specific embodiment of the present invention, when the first graphene layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, the first graphene layer 40 and the molybdenum disulfide layer The total thickness of 50 is equal to the thickness of the second electrode 30 layer, and part of the second graphene layer 60 is disposed on the surface of the second electrode 30, thereby improving the stability of the overall structure.
在本发明一具体实施例中，当第二石墨烯层60设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接时，第二石墨烯层60和二硫化钼层50的总厚度等于第一电极20层的厚度，部分第一石墨烯层40设置在第一电极20表面，进而提高整体结构的稳定性。In a specific embodiment of the present invention, when the second graphene layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, the second graphene layer 60 and the molybdenum disulfide layer The total thickness of 50 is equal to the thickness of the first electrode 20 layer, and part of the first graphene layer 40 is disposed on the surface of the first electrode 20, thereby improving the stability of the overall structure.
在本发明中，第一石墨烯层40、二硫化钼层50和第二石墨烯层60依次层叠设置在沟道结构内，包括第一石墨烯层40、二硫化钼层50和第二石墨烯层60依次层叠后设置在沟道结构内，其中，第一石墨烯层40比二硫化钼层50和第二石墨烯层60更靠近基底10，或第二石墨烯层60比第一石墨烯层40和二硫化钼层50更靠近基底10。In the present invention, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are sequentially stacked in the channel structure, including the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer. The olefin layer 60 is sequentially stacked and arranged in the channel structure. The first graphene layer 40 is closer to the substrate 10 than the molybdenum disulfide layer 50 and the second graphene layer 60, or the second graphene layer 60 is closer to the substrate 10 than the first graphene layer 60. The olefin layer 40 and the molybdenum disulfide layer 50 are closer to the substrate 10.
在本发明一实施方式中，第一石墨烯层40在基底10上的正投影与第二石墨烯层60在基底10上的正投影的重合区域，与二硫化钼层50在基底10上的正投影面积比为1：(0.2-5)。此时可以更好地使石墨烯/二硫化钼/石墨烯异质结发挥作用，实现快速光响应探测。进一步的，第一石墨烯层40在基底10上的正投影与第二石墨烯层60在基底10上的正投影的重合区域，与二硫化钼层50在基底10上的正投影面积比为1：(1-3)。更进一步的，第一石墨烯层40在基底10上的正投影与第二石墨烯层60在基底10上的正投影的重合区域，与二硫化钼层50在基底10上的正投影面积比为1：(1-1.5)，更有利于光电探测，同时降低暗电流，并节省石墨烯材料。在本发明一具体实施例中，第一石墨烯层40在基底10上的正投影与第二石墨烯层60在基底10上的正投影的重合区域，与二硫化钼层50在基底10上的正投影面积比为1：1。In one embodiment of the present invention, the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the area where the molybdenum disulfide layer 50 is on the substrate 10 The ratio of the orthographic projection area is 1: (0.2-5). At this time, the graphene/molybdenum disulfide/graphene heterojunction can be better made to work, realizing fast light response detection. Further, the ratio of the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 to the area of the orthographic projection of the molybdenum disulfide layer 50 on the substrate 10 is 1: (1-3). Furthermore, the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is compared with the area of the orthographic projection of the molybdenum disulfide layer 50 on the substrate 10 It is 1:(1-1.5), which is more conducive to photodetection, while reducing dark current and saving graphene materials. In a specific embodiment of the present invention, the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the molybdenum disulfide layer 50 on the substrate 10. The ratio of the orthographic projection area is 1:1.
在本发明一实施方式中，第一石墨烯层40在基底10上的正投影与第二石墨烯层60在基底10上的正投影的重合区域，与二硫化钼层50在基底10上的正投影完全重叠，提高快速响应。In one embodiment of the present invention, the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 60 on the substrate 10 is the same as the area where the molybdenum disulfide layer 50 is on the substrate 10 The orthographic projections are completely overlapped, improving fast response.
在本发明中，第一石墨烯层40、二硫化钼层50和第二石墨烯层60之间通过范德华力连接，形成范德华力异质结，使得光电探测器整体结构稳定。In the present invention, the first graphene layer 40, the molybdenum disulfide layer 50 and the second graphene layer 60 are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
在本发明中，沟道结构包括第一电极10和第二电极20之间的区域，也包括该区域上 方的空间。也就是说，第一石墨烯层40、二硫化钼层50和第二石墨烯层60可以层叠设置在第一电极10和第二电极20之间的区域，也可以设置在第一电极10和第二电极20之间的区域的上方。在本发明一实施例中，第一石墨烯层40、二硫化钼层50和第二石墨烯层60层叠设置在第一电极10和第二电极20之间的区域。In the present invention, the channel structure includes the area between the first electrode 10 and the second electrode 20, and also includes the space above the area. That is to say, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 may be laminated and disposed in the area between the first electrode 10 and the second electrode 20, or may be disposed in the first electrode 10 and Above the area between the second electrodes 20. In an embodiment of the present invention, the first graphene layer 40, the molybdenum disulfide layer 50, and the second graphene layer 60 are stacked in the region between the first electrode 10 and the second electrode 20.
在本发明一实施方式中，光电探测器还包括自修复电极，自修复电极设置在第一电极20和/或第二电极30的表面。在本发明中，自修复电极设置在第一电极20和/或第二电极30的表面，用于在第一电极20和/或第二电极30出现细小裂痕、裂缝时，可以对出现细小裂痕、裂缝进行修复，避免出现的裂痕、裂缝对光电探测器的工作产生影响，进而实现自修复过程，提高了光电探测器的使用寿命。In an embodiment of the present invention, the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode 20 and/or the second electrode 30. In the present invention, the self-healing electrode is arranged on the surface of the first electrode 20 and/or the second electrode 30, and is used to prevent the occurrence of small cracks and cracks in the first electrode 20 and/or the second electrode 30. , The cracks are repaired to avoid the occurrence of cracks and cracks from affecting the work of the photoelectric detector, thereby realizing the self-repairing process, and improving the service life of the photoelectric detector.
在本发明一实施方式中，自修复电极包括电极基体和自修复层，自修复层设置在电极基体靠近第一电极和/或第二电极的一侧表面。在本发明一实施例中，电极基体一表面全部设置有自修复层。在本发明另一实施例中，电极基体一表面部分设置有自修复层。可选的，自修复层在电极基体表面的正投影占电极基体表面面积的20％-70％。可选的，自修复层的材质包括聚氨酯、环氧树脂、乙烯-醋酸乙烯酯共聚物、聚酰亚胺、聚己内酯、聚乳酸、聚乙醇酸、聚乳酸-羟基乙酸共聚物、聚乙烯醇及其衍生物中的至少一种。具体的，自修复层的材质可以但不限于为长链羰基化改性的聚氨酯。可选的，电极基体的材质包括金、银、铂、铜、铬和钛中的至少一种。进一步的，电极基体包括电极连接层和电极金属层，电极连接层与自修复层接触。更进一步的，电极连接层的材质包括铬和/或钛，电极金属层的材质包括金、银、铂和铜中的至少一种。在本发明中，电极连接层除了用于导电，还起到一定的连接作用，使得电极金属层与自修复层更好的粘附和连接，提高电极基体与自修复层的结合力。具体的，可以但不限于为电极基体为铬层和金层层叠形成。In one embodiment of the present invention, the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is arranged on a side surface of the electrode base close to the first electrode and/or the second electrode. In an embodiment of the present invention, a self-healing layer is provided on one surface of the electrode substrate. In another embodiment of the present invention, a self-repairing layer is provided on a surface portion of the electrode substrate. Optionally, the orthographic projection of the self-healing layer on the surface of the electrode substrate accounts for 20%-70% of the surface area of the electrode substrate. Optionally, the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer, poly At least one of vinyl alcohol and its derivatives. Specifically, the material of the self-healing layer may be, but is not limited to, long-chain carbonylation modified polyurethane. Optionally, the material of the electrode substrate includes at least one of gold, silver, platinum, copper, chromium and titanium. Further, the electrode base includes an electrode connection layer and an electrode metal layer, and the electrode connection layer is in contact with the self-healing layer. Furthermore, the material of the electrode connection layer includes chromium and/or titanium, and the material of the electrode metal layer includes at least one of gold, silver, platinum and copper. In the present invention, the electrode connection layer not only serves for conduction, but also has a certain connection function, so that the electrode metal layer and the self-healing layer are better adhered and connected, and the bonding force between the electrode substrate and the self-healing layer is improved. Specifically, it can be, but not limited to, that the electrode substrate is formed by stacking a chromium layer and a gold layer.
请参阅图2，为本发明一实施例提供的一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的制备方法流程图，包括：Please refer to FIG. 2, which is a flowchart of a method for manufacturing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention, including:
S110：提供基底，在所述基底一侧表面沉积电极材料，形成间隔设置的第一电极和第二电极，其中，所述第一电极和所述第二电极之间形成沟道结构。S110: Provide a substrate, deposit electrode material on one side surface of the substrate to form a first electrode and a second electrode spaced apart, wherein a channel structure is formed between the first electrode and the second electrode.
在S110中，电极材料包括金、银、铂、铜、铬和钛中的至少一种。在本发明中，第一电极和第二电极的材质可以相同，也可以不同，对此不作限定。可选的，通过蒸镀、溅射或离子镀方式沉积电极材料。具体的，可以但不限于为，将基底粘贴在带有电极图案的精密硅基掩膜版上，然后一起放入电子束蒸发仪中蒸镀电极材料，得到带有空白电极图案的基底。其中，基底、第一电极和第二电极的选择如上所述，在此不再赘述。In S110, the electrode material includes at least one of gold, silver, platinum, copper, chromium, and titanium. In the present invention, the materials of the first electrode and the second electrode may be the same or different, which is not limited. Optionally, the electrode material is deposited by evaporation, sputtering or ion plating. Specifically, but not limited to, the substrate is pasted on a precision silicon-based mask with electrode patterns, and then placed in an electron beam evaporator to evaporate electrode materials to obtain a substrate with blank electrode patterns. The selection of the substrate, the first electrode and the second electrode are as described above, and will not be repeated here.
S120：将第一石墨烯薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯薄膜和所述第二石墨烯薄膜接触连接，得到基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器。S120: Laminating a first graphene film, a molybdenum disulfide film, and a second graphene film in the channel structure in sequence, and the first electrode and the second electrode are respectively connected to the first graphene film It is connected in contact with the second graphene film to obtain a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction.
在S120中，基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器包括基底、第一电极、第二电极、第一石墨烯层、二硫化钼层和第二石墨烯层，第一电极和第二电极间隔设置在基底的一侧表面，第一电极和第二电极之间形成沟道结构，第一石墨烯层、二硫化钼 层和第二石墨烯层依次层叠设置在沟道结构内，第一电极和第二电极分别与第一石墨烯层和第二石墨烯层接触连接。其中，第一石墨烯薄膜、二硫化钼薄膜和第二石墨烯薄膜依次对应于第一石墨烯层、二硫化钼层和第二石墨烯层，第一石墨烯层、二硫化钼层和第二石墨烯层的选择如上所述，在此不再赘述。在本发明中，可以但不限于为第一石墨烯薄膜、二硫化钼薄膜和第二石墨烯薄膜通过剥离法制备得到。In S120, a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction includes a substrate, a first electrode, a second electrode, a first graphene layer, a molybdenum disulfide layer, and a second graphene layer, The first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, and the first graphene layer, the molybdenum disulfide layer and the second graphene layer are sequentially stacked on In the channel structure, the first electrode and the second electrode are respectively in contact with the first graphene layer and the second graphene layer. Among them, the first graphene film, the molybdenum disulfide film, and the second graphene film correspond to the first graphene layer, the molybdenum disulfide layer, and the second graphene layer in sequence. The first graphene layer, the molybdenum disulfide layer, and the second graphene layer The selection of the two graphene layers is as described above, and will not be repeated here. In the present invention, the first graphene film, the molybdenum disulfide film, and the second graphene film may be prepared by a lift-off method, but are not limited to.
在本发明一实施方式中，制备方法还包括：将自修复材料涂覆在第一电极和/或第二电极的表面，形成自修复层；在自修复层上沉积电极材料，形成自修复电极。其中，该制备过程可以在形成第一电极和第二电极后进行，也可以在形成第一石墨烯层、二硫化钼层和第二石墨烯层中至少一层后进行，对此不作限定。In one embodiment of the present invention, the preparation method further includes: coating a self-healing material on the surface of the first electrode and/or the second electrode to form a self-healing layer; depositing electrode material on the self-healing layer to form a self-healing electrode . Wherein, the preparation process may be performed after forming the first electrode and the second electrode, or after forming at least one of the first graphene layer, the molybdenum disulfide layer, and the second graphene layer, which is not limited.
本发明提供的基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器，通过在光电探测器中设置石墨烯/二硫化钼/石墨烯异质结，解决现有光电探测器响应速度慢的问题，使光电探测器的响应速度达到毫秒级，显著提高了光电探测器的响应速度，有利于其广泛应用。本发明提供的基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的制备方法简单易操作，可以实现快速响应的光电探测器。The fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the present invention solves the response of the existing photodetector by setting the graphene/molybdenum disulfide/graphene heterojunction in the photodetector The problem of slow speed makes the response speed of the photodetector reach the millisecond level, which significantly improves the response speed of the photodetector, which is conducive to its wide application. The preparation method of the fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction provided by the invention is simple and easy to operate, and can realize a fast response photodetector.
实施例1Example 1
将聚对苯二甲酸乙二醇酯(PET)基底裁剪切成1×1cm 2大小，将设计好电极形状的硅基掩模版固定在该PET基底上，通过热蒸镀的方法先后蒸镀铬层和金层，其中铬层的厚度为5nm，金层的厚度为40nm，最后将PET基底取出，即得到具有间隔设置的第一电极和第二电极的柔性PET基底，第一电极和第二电极的厚度为45nm，第一电极和第二电极之间形成沟道结构。 The polyethylene terephthalate (PET) substrate was cut into 1×1cm 2 size, the silicon-based mask with the electrode shape was fixed on the PET substrate, and the chromium layer was successively evaporated by the method of thermal evaporation And the gold layer, where the thickness of the chromium layer is 5nm, the thickness of the gold layer is 40nm, and finally the PET substrate is taken out to obtain a flexible PET substrate with the first electrode and the second electrode arranged at intervals, the first electrode and the second electrode The thickness is 45nm, and a channel structure is formed between the first electrode and the second electrode.
分别取少量石墨片和二硫化钼单晶粘到胶带上，反复撕20次，再将撕好的样品转移到聚二甲基硅氧烷(PDMS)薄膜上，最后将PDMS薄膜上的样品转移到步骤(1)中具有金属电极的PET基底上，形成第一石墨烯薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在沟道结构内的结构，得到石墨烯/二硫化钼/石墨烯异质结，部分第一石墨烯薄膜设置在第一电极表面，部分第二石墨烯薄膜设置在第二电极表面，第一石墨烯薄膜的厚度为10nm，二硫化钼薄膜的厚度为15nm，第二石墨烯薄膜的厚度为10nm，即制得基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器。Take a small amount of graphite flakes and molybdenum disulfide single crystals and stick them to the tape, repeat the tearing 20 times, then transfer the torn sample to the polydimethylsiloxane (PDMS) film, and finally transfer the sample on the PDMS film On the PET substrate with metal electrodes in step (1), the first graphene film, the molybdenum disulfide film, and the second graphene film are sequentially stacked and arranged in the channel structure to obtain graphene/molybdenum disulfide/ Graphene heterojunction, part of the first graphene film is set on the surface of the first electrode, part of the second graphene film is set on the surface of the second electrode, the thickness of the first graphene film is 10nm, and the thickness of the molybdenum disulfide film is 15nm , The thickness of the second graphene film is 10nm, that is, a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction is prepared.
实施例2Example 2
将聚二甲基硅氧烷基底粘贴在带有电极图案的精密硅基掩膜版上，然后一起放入电子束蒸发仪中分别蒸镀铬层和金层，最后将聚二甲基硅氧烷基底取出，即得到具有间隔设置的第一电极和第二电极的聚二甲基硅氧烷基底，第一电极和第二电极的厚度为60nm，第一电极和第二电极之间形成沟道结构。Paste the polydimethylsiloxane substrate on a precision silicon-based mask with electrode patterns, and then put it into an electron beam evaporator to vaporize the chromium layer and the gold layer, and finally the polydimethylsiloxane The substrate is taken out to obtain a polydimethylsiloxane substrate with a first electrode and a second electrode spaced apart. The thickness of the first electrode and the second electrode is 60nm, and a channel is formed between the first electrode and the second electrode structure.
将第一石墨烯薄膜、二硫化钼薄膜和第二石墨烯薄膜转移到聚二甲基硅氧烷基底上，第一石墨烯薄膜的厚度为8nm，二硫化钼薄膜的厚度为18nm，第二石墨烯薄膜的厚度为12nm，第一石墨烯薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在沟道结构内，得到石墨烯/二硫化钼/石墨烯异质结，第一电极和第二电极分别与第一石墨烯薄膜和第二石墨 烯薄膜接触连接，即制得基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器。Transfer the first graphene film, the molybdenum disulfide film and the second graphene film to a polydimethylsiloxane substrate. The thickness of the first graphene film is 8nm, the thickness of the molybdenum disulfide film is 18nm, and the second graphene film is The thickness of the graphene film is 12nm. The first graphene film, the molybdenum disulfide film and the second graphene film are stacked in the channel structure in order to obtain a graphene/molybdenum disulfide/graphene heterojunction, and the first electrode The second electrode is in contact with the first graphene film and the second graphene film respectively, and a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction is prepared.
对比例Comparison
将聚对苯二甲酸乙二醇酯(PET)基底裁剪切成1×1cm 2大小，将设计好电极形状的硅基掩模版固定在该PET基底上，通过热蒸镀的方法先后蒸镀铬层和金层，其中铬层的厚度为5nm，金层的厚度为40nm，最后将PET基底取出，即得到具有间隔设置的第一电极和第二电极的柔性PET基底，第一电极和第二电极的厚度为45nm，第一电极和第二电极之间形成沟道结构。 The polyethylene terephthalate (PET) substrate was cut into 1×1cm 2 size, the silicon-based mask with the electrode shape was fixed on the PET substrate, and the chromium layer was successively evaporated by the method of thermal evaporation And the gold layer, where the thickness of the chromium layer is 5nm, the thickness of the gold layer is 40nm, and finally the PET substrate is taken out to obtain a flexible PET substrate with the first electrode and the second electrode arranged at intervals, the first electrode and the second electrode The thickness is 45nm, and a channel structure is formed between the first electrode and the second electrode.
取少量二硫化钼单晶粘到胶带上，反复撕20次，再将撕好的样品转移到聚二甲基硅氧烷(PDMS)薄膜上，最后将PDMS薄膜上的样品转移到步骤(1)中具有金属电极的PET基底上，二硫化钼薄膜设置在沟道结构内并与第一电极和第二电极接触连接，二硫化钼薄膜的厚度为15nm，即制得基于二硫化钼的光电探测器。Take a small amount of molybdenum disulfide single crystal and stick it on the tape, repeat the tearing 20 times, then transfer the torn sample to the polydimethylsiloxane (PDMS) film, and finally transfer the sample on the PDMS film to step (1 ) On the PET substrate with metal electrodes, the molybdenum disulfide film is arranged in the channel structure and is in contact with the first electrode and the second electrode. The thickness of the molybdenum disulfide film is 15nm, that is, the photoelectricity based on molybdenum disulfide is prepared. detector.
效果实施例Example of effects
将实施例1和对比例制得的光电探测器放置在半导体特性分析仪配套的探针平台上，通过配套的CCD成像系统找到柔性基底上器件的准确位置。选取探针台配套的两个探针分别接触到器件的第一电极和第二电极上。引入655nm激光，垂直照射在光电探测器。打开半导体特性分析仪测试软件，其中设置作为漏极探针选择电压偏压模式，固定偏压为1V，另一金属探针作为源极，设置其电压为0V。设置放置在样品上方的快门控制器的开关周期为20s。运行测试软件，得到光电探测器在无光、有光条件下的时间依赖的电流曲线图，结果如图3所示，其中图3中(a)为实施例1提供的光电探测器的光电响应测试结果图，图3中(b)为对比例提供的光电探测器的光电响应测试结果图。可以看出，实施例1提供的光电探测器在无光至有光的响应时间为0.13s，无光至有光的响应时间为0.06s，响应速度非常快，达到了毫秒级，而对比例提供的光电探测器在无光至有光的响应时间为4.5s，无光至有光的响应时间为6.4s，响应速度慢。因此，本发明提供的基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器可以明显提高光电探测器的响应速度，实现毫秒级响应。The photodetectors prepared in Example 1 and the comparative example were placed on the probe platform matched with the semiconductor characteristic analyzer, and the accurate position of the device on the flexible substrate was found through the matched CCD imaging system. The two probes matched with the probe station are selected to respectively contact the first electrode and the second electrode of the device. Introduce 655nm laser, irradiate the photodetector vertically. Open the semiconductor characteristic analyzer test software, which is set as the drain probe to select the voltage bias mode, the fixed bias is 1V, and the other metal probe is the source, and the voltage is set to 0V. Set the switching cycle of the shutter controller placed above the sample to 20s. Run the test software to obtain the time-dependent current curve diagram of the photodetector under the conditions of no light and light. The result is shown in Figure 3, in which Figure 3 (a) is the photoelectric response of the photodetector provided in Example 1. Test result graph, Figure 3(b) is the photoelectric response test result graph of the photodetector provided by the comparative example. It can be seen that the photodetector provided in Example 1 has a response time of 0.13s from no light to light, and a response time of 0.06s from no light to light. The response speed is very fast, reaching the millisecond level. The provided photodetector has a response time of 4.5s from no light to light, and a response time of 6.4s from no light to light, and the response speed is slow. Therefore, the fast photodetector based on the graphene/molybdenum disulfide/graphene heterojunction provided by the present invention can significantly improve the response speed of the photodetector and realize a millisecond response.
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementation modes of the present invention, and the description is relatively specific and detailed, but it should not be understood as a limitation to the patent scope of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can be made, and these all fall within the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims.

Claims (10)

  1. 一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器，其特征在于，包括基底、第一电极、第二电极、第一石墨烯层、二硫化钼层和第二石墨烯层，所述第一电极和所述第二电极间隔设置在所述基底的一侧表面，所述第一电极和所述第二电极之间形成沟道结构，所述第一石墨烯层、所述二硫化钼层和所述第二石墨烯层依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯层和所述第二石墨烯层接触连接。A fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, which is characterized by comprising a substrate, a first electrode, a second electrode, a first graphene layer, a molybdenum disulfide layer and a second graphite An alkene layer, the first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, and the first graphene layer , The molybdenum disulfide layer and the second graphene layer are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphene layer and the second graphene layer. The two graphene layers are in contact with each other.
  2. 如权利要求1所述的光电探测器，其特征在于，所述第一石墨烯层的厚度为0.3nm-15nm，所述二硫化钼层的厚度为0.6nm-25nm，所述第二石墨烯层的厚度为0.3nm-15nm。The photodetector according to claim 1, wherein the thickness of the first graphene layer is 0.3nm-15nm, the thickness of the molybdenum disulfide layer is 0.6nm-25nm, and the second graphene layer has a thickness of 0.6nm-25nm. The thickness of the layer is 0.3nm-15nm.
  3. 如权利要求1所述的光电探测器，其特征在于，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述二硫化钼层在所述基底上的正投影面积比为1：(0.2-5)。The photodetector according to claim 1, wherein the overlap area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate, The ratio of the area to the orthographic projection of the molybdenum disulfide layer on the substrate is 1: (0.2-5).
  4. 如权利要求1所述的光电探测器，其特征在于，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述二硫化钼层在所述基底上的正投影完全重叠。The photodetector according to claim 1, wherein the overlap area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate, It completely overlaps with the orthographic projection of the molybdenum disulfide layer on the substrate.
  5. 如权利要求1所述的光电探测器，其特征在于，所述基底为柔性基底时，所述光电探测器还包括介电层和栅极，所述介电层和所述栅极设置在所述基底和所述第一石墨烯层之间，所述介电层设置在所述栅极和所述第一石墨烯层之间。The photodetector according to claim 1, wherein when the substrate is a flexible substrate, the photodetector further comprises a dielectric layer and a gate, and the dielectric layer and the gate are arranged on the Between the substrate and the first graphene layer, the dielectric layer is disposed between the gate and the first graphene layer.
  6. 如权利要求1所述的光电探测器，其特征在于，所述第一电极和所述第二电极的材质包括金、银、铂、铜、铬和钛中的至少一种。The photodetector according to claim 1, wherein the material of the first electrode and the second electrode includes at least one of gold, silver, platinum, copper, chromium and titanium.
  7. 如权利要求6所述的光电探测器，其特征在于，所述第一电极和所述第二电极均为铬层和金层层叠形成，所述铬层与所述基底接触，所述铬层的厚度为5nm-10nm，所述金层的厚度为20nm-80nm。The photodetector according to claim 6, wherein the first electrode and the second electrode are both formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate, and the chromium layer The thickness of the gold layer is 5nm-10nm, and the thickness of the gold layer is 20nm-80nm.
  8. 如权利要求1所述的光电探测器，其特征在于，部分所述第一石墨烯层设置在所述第一电极表面，部分所述第二石墨烯层设置在所述第二电极表面。The photodetector according to claim 1, wherein part of the first graphene layer is disposed on the surface of the first electrode, and part of the second graphene layer is disposed on the surface of the second electrode.
  9. 如权利要求1所述的光电探测器，其特征在于，还包括自修复电极，所述自修复电极设置在所述第一电极和/或所述第二电极的表面，所述自修复电极包括电极基体和自修复层，所述自修复层设置在所述电极基体靠近所述第一电极和/或所述第二电极的一侧表面。The photodetector according to claim 1, further comprising a self-healing electrode, the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode, and the self-healing electrode comprises An electrode base and a self-healing layer, the self-healing layer being arranged on a side surface of the electrode base close to the first electrode and/or the second electrode.
  10. 一种基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器的制备方法，其特征在于，包括：A method for preparing a fast photodetector based on graphene/molybdenum disulfide/graphene heterojunction, which is characterized in that it comprises:
    提供基底，在所述基底一侧表面沉积电极材料，形成间隔设置的第一电极和第二电极，其中，所述第一电极和所述第二电极之间形成沟道结构；Providing a substrate, depositing electrode material on one side surface of the substrate to form a first electrode and a second electrode arranged at intervals, wherein a channel structure is formed between the first electrode and the second electrode;
    将第一石墨烯薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在所述沟道结构内， 所述第一电极和所述第二电极分别与所述第一石墨烯薄膜和所述第二石墨烯薄膜接触连接，得到基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器。A first graphene film, a molybdenum disulfide film, and a second graphene film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphene film and the second graphene film. The second graphene film is contacted and connected to obtain a fast photodetector based on a graphene/molybdenum disulfide/graphene heterojunction.
PCT/CN2020/105587 2019-10-25 2020-07-29 Rapid photodetector based on graphene/molybdenum disulfide/graphene heterojunction, and preparation method therefor WO2021077839A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201911026280.2 2019-10-25
CN201911026280.2A CN110993702A (en) 2019-10-25 2019-10-25 Rapid photoelectric detector based on graphene/molybdenum disulfide/graphene heterojunction and preparation method thereof

Publications (1)

Publication Number Publication Date
WO2021077839A1 true WO2021077839A1 (en) 2021-04-29

Family

ID=70082428

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/105587 WO2021077839A1 (en) 2019-10-25 2020-07-29 Rapid photodetector based on graphene/molybdenum disulfide/graphene heterojunction, and preparation method therefor

Country Status (2)

Country Link
CN (1) CN110993702A (en)
WO (1) WO2021077839A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993702A (en) * 2019-10-25 2020-04-10 深圳大学 Rapid photoelectric detector based on graphene/molybdenum disulfide/graphene heterojunction and preparation method thereof
CN113097331A (en) * 2021-02-24 2021-07-09 重庆科技学院 Infrared detector based on graphene and quantum dots
CN113990970A (en) * 2021-10-22 2022-01-28 广东工业大学 Graphene/tungsten disulfide-tungsten diselenide heterojunction/graphene photoelectric detector and preparation method and application thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103531655A (en) * 2013-10-28 2014-01-22 鲍桥梁 Graphene heterojunction optical detector integrated with silicon optical waveguide
US20150014630A1 (en) * 2013-07-15 2015-01-15 Sungkyunkwan University Foundation For Corporate Collaboration Tunneling devices and methods of manufacturing the same
US20170117430A1 (en) * 2015-10-21 2017-04-27 Samsung Electronics Co., Ltd. Photodetector using bandgap-engineered 2d materials and method of manufacturing the same
CN107316915A (en) * 2017-07-04 2017-11-03 中山大学 Photodetector of integrated graphene molybdenum disulfide of visible light wave range and preparation method thereof
CN107527968A (en) * 2017-07-16 2017-12-29 北京工业大学 A kind of lateral heterojunction photoelectric detector structure of graphene molybdenum disulfide
CN207038541U (en) * 2017-07-30 2018-02-23 北京蓝木科技有限公司 The graphene molybdenum disulfide flexible optoelectronic sensor and optoelectronic detecting device of a kind of high response
CN110993702A (en) * 2019-10-25 2020-04-10 深圳大学 Rapid photoelectric detector based on graphene/molybdenum disulfide/graphene heterojunction and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103606418B (en) * 2013-10-22 2015-10-28 华南师范大学 A kind of preparation method of leaf shape transparency conductive electrode
CN105489693B (en) * 2015-12-31 2017-09-29 南京大学 Based on the sub- device of two-dimensional layer thin-film material p g n heterojunction photovoltaics
CN108231817A (en) * 2018-01-29 2018-06-29 杭州紫元科技有限公司 A kind of low-power consumption charge coupling device based on two-dimensional material/insulating layer/semiconductor structure
CN109755307B (en) * 2019-01-02 2021-02-12 南京大学 Avalanche field effect transistor based on two-dimensional layered material and measuring device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150014630A1 (en) * 2013-07-15 2015-01-15 Sungkyunkwan University Foundation For Corporate Collaboration Tunneling devices and methods of manufacturing the same
CN103531655A (en) * 2013-10-28 2014-01-22 鲍桥梁 Graphene heterojunction optical detector integrated with silicon optical waveguide
US20170117430A1 (en) * 2015-10-21 2017-04-27 Samsung Electronics Co., Ltd. Photodetector using bandgap-engineered 2d materials and method of manufacturing the same
CN107316915A (en) * 2017-07-04 2017-11-03 中山大学 Photodetector of integrated graphene molybdenum disulfide of visible light wave range and preparation method thereof
CN107527968A (en) * 2017-07-16 2017-12-29 北京工业大学 A kind of lateral heterojunction photoelectric detector structure of graphene molybdenum disulfide
CN207038541U (en) * 2017-07-30 2018-02-23 北京蓝木科技有限公司 The graphene molybdenum disulfide flexible optoelectronic sensor and optoelectronic detecting device of a kind of high response
CN110993702A (en) * 2019-10-25 2020-04-10 深圳大学 Rapid photoelectric detector based on graphene/molybdenum disulfide/graphene heterojunction and preparation method thereof

Also Published As

Publication number Publication date
CN110993702A (en) 2020-04-10

Similar Documents

Publication Publication Date Title
WO2021077839A1 (en) Rapid photodetector based on graphene/molybdenum disulfide/graphene heterojunction, and preparation method therefor
WO2021077837A1 (en) Rapid photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction, and preparation method therefor
WO2021077838A1 (en) Photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, and preparation method therefor
CN107221575B (en) Near-infrared detector based on two-dimensional material vertical Schottky junction and preparation method
Fonrodona et al. PEN as substrate for new solar cell technologies
CN107527968A (en) A kind of lateral heterojunction photoelectric detector structure of graphene molybdenum disulfide
CN104779352A (en) Light detector based on graphene and nano-structure perovskite material and manufacturing method
CN108987522A (en) A kind of photoelectric sensor, photoelectric sensing component and preparation method thereof
CN108630782B (en) Preparation method of wide detection waveband dual-plasma working photoelectric detector
CN108281493A (en) Two tungsten selenides and driving photodetector and the preparation certainly of metallic vertical type schottky junction
Liu et al. Flexible omnidirectional self-powered photodetectors enabled by solution-processed two-dimensional layered PbI2 nanoplates
TW202017219A (en) Semiconductor structure, optoelectronic device, photodetector and spectrometer
CN105932090B (en) A kind of membrane structure position sensitive detector based on lateral photovoltaic effect
CN110620164B (en) Polarized light detector based on two-dimensional layered semiconductor material and preparation method thereof
Xu et al. Surface engineering in SnO2/Si for high-performance broadband photodetectors
CN209434186U (en) A kind of zinc oxide piezoelectric sensor based on indium selenide transistor
Xu et al. Self-powered and fast response MoO3/n-Si photodetectors on flexible silicon substrates with light-trapping structures
Zhou et al. A full transparent high-performance flexible phototransistor with an ultra-short channel length
WO2022088204A1 (en) Ultraviolet-visible-near-infrared silicon-based photodetector and production method therefor
CN107706260A (en) A kind of two tungsten selenide thin slices/indium oxide nano thread composite construction near infrared photodetector and preparation method thereof
Stavarache et al. Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties
CN115000212B (en) Two-dimensional direct band gap semiconductor detector and preparation method thereof
CN109935654A (en) A kind of silicon substrate molybdenum disulfide heterojunction photovoltaic sensor and preparation method
CN115832108A (en) Preparation method of grid-adjustable high-sensitivity polarization detector
CN211480068U (en) Photoelectric detector based on ultrashort channel graphene

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20879882

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 31/10/2022)

122 Ep: pct application non-entry in european phase

Ref document number: 20879882

Country of ref document: EP

Kind code of ref document: A1