WO2021077838A1 - Photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, and preparation method therefor - Google Patents

Photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, and preparation method therefor Download PDF

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WO2021077838A1
WO2021077838A1 PCT/CN2020/105551 CN2020105551W WO2021077838A1 WO 2021077838 A1 WO2021077838 A1 WO 2021077838A1 CN 2020105551 W CN2020105551 W CN 2020105551W WO 2021077838 A1 WO2021077838 A1 WO 2021077838A1
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electrode
layer
molybdenum disulfide
graphene
substrate
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Chinese (zh)
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张晗
王慧德
郭志男
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深圳大学
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/028Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention claims the priority of the prior application of the application number 201911026271.3 filed on October 25, 2019 under the title of "Black Phosphorus/Graphene/Molybdenum Disulfide Heterojunction-Based Photodetector and Its Preparation Method".
  • the content of the first application is incorporated into this text by way of introduction.
  • the invention relates to the field of photodetectors, in particular to a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction and a preparation method thereof.
  • a photodetector is a device that converts optical signals into electrical signals.
  • Photoelectric detectors have a wide range of uses, covering various fields of military and national economy. For example, they are mainly used for ray measurement and detection, industrial automatic control, photometric measurement, etc. in the visible and near-infrared bands.
  • the present invention provides a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, which is solved by setting the black phosphorus/graphene/molybdenum disulfide heterojunction in the photodetector.
  • the problem of excessive dark current during the use of the existing photodetector realizes low dark current, fast response, high sensitivity, and wide-band photodetection, and the photodetector can efficiently detect visible light and infrared light at the same time, which is beneficial to its wide range application.
  • the present invention provides a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, including a substrate, a first electrode, a second electrode, a black phosphorus film layer, a graphene layer, and a disulfide A molybdenum layer, the first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, the black phosphorous film layer, The graphene layer and the molybdenum disulfide layer are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are in contact with the black phosphorous film layer and the molybdenum disulfide layer, respectively connection.
  • a black phosphorus/graphene/molybdenum disulfide heterojunction is set in the photodetector.
  • the band gap of black phosphorus and graphene is very narrow, and the light response to infrared band is obvious, and the band of molybdenum disulfide The gap is suitable for the detection of visible light, so the heterojunction formed by the combination of the three can take advantage of the synergy of the three, so that the photodetector has the ability to efficiently detect visible light and infrared light at room temperature, and realizes wide-band light detection; at the same time,
  • the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the present invention is the first in the black phosphorus/molybdenum disulfide PN junction The graphene layer is added to the junction, which
  • the excellent broad-spectrum photodetection performance of graphene can play a great role under the built-in electric field of the heterojunction. This is due to the photogenerated electron-hole pairs generated by the graphene under the built-in electric field of the heterojunction. , Can separate quickly and effectively, which will effectively improve the photoelectric responsivity of the entire detector, and at the same time broaden the detection range of the detector to the terahertz band. Furthermore, the small dark current and the large photoelectric responsivity will jointly lead to the ultra-high detection rate of the detector. Theoretically, it can reach more than 10 12 Jone in the infrared band, which can reach the detection rate of commercial infrared detectors.
  • the substrate may be a flexible substrate or a rigid substrate.
  • the material of the substrate includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane.
  • the substrate is a flexible substrate.
  • the substrate may be a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate.
  • the size of the substrate is not limited, and the specific size can be selected according to actual needs.
  • the detection range of the detector is from the ultraviolet band to the terahertz band.
  • the detection range of the detector is greater than 10 12 Jone. Further, the detection range of the detector is greater than 10 14 Jone. Furthermore, the detection range of the detector is greater than 10 16 Jone, which is 4 orders of magnitude higher than that of a commercial infrared detector.
  • the material of the first electrode and the second electrode includes at least one of gold, silver, platinum, copper, chromium, and titanium.
  • the materials of the first electrode and the second electrode may be the same or different, which is not limited.
  • the first electrode and the second electrode include a connection layer and a metal layer, and the connection layer is in contact with the substrate.
  • the material of the connection layer includes chromium and/or titanium
  • the material of the metal layer includes at least one of gold, silver, platinum and copper.
  • the connecting layer in addition to being used for conducting electricity, the connecting layer also has a certain connection function, so that the metal layer and the substrate are better adhered and connected, and the bonding force between the first electrode and the second electrode and the substrate is improved.
  • the first electrode and the second electrode are both formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate, and the thickness of the chromium layer is 5 nm-10 nm, The thickness of the gold layer is 20 nm-80 nm.
  • the thickness of the first electrode is 25nm-90nm
  • the thickness of the second electrode is 25nm-90nm
  • the distance between the first electrode and the second electrode is 1 ⁇ m-15 ⁇ m. That is, the size of the channel structure formed between the first electrode and the second electrode in the first direction is 1 ⁇ m-15 ⁇ m.
  • the black phosphorus film layer is composed of a single layer of black phosphorus or multiple layers of black phosphorus
  • the graphene layer is composed of a single layer of graphene or multiple layers of graphene
  • the molybdenum disulfide layer is composed of a single layer of graphene.
  • Layered molybdenum disulfide composition or multilayer molybdenum disulfide composition is composed of a single layer of black phosphorus or multiple layers of black phosphorus
  • the graphene layer is composed of a single layer of graphene or multiple layers of graphene
  • the molybdenum disulfide layer is composed of a single layer of graphene.
  • the single-layer molybdenum disulfide has a direct band gap with a size of about 1.9eV
  • the multilayer molybdenum disulfide has an indirect band gap with a size of about 1.2eV
  • the single-layer black phosphorus (with a size of about 2eV)
  • To multilayer black phosphorus (about 0.3eV) are all direct band gaps.
  • the thickness of the black phosphorous film layer is 0.5 nm-50 nm
  • the thickness of the graphene layer is 0.3 nm-15 nm
  • the thickness of the molybdenum disulfide layer is 0.6 nm-50 nm.
  • part of the black phosphorous film layer is disposed on the surface of the first electrode, or the black phosphorous film layer is disposed in the channel structure and is close to the first electrode at one end of the second electrode Contact connection. That is, when part of the black phosphorous film layer is disposed on the surface of the first electrode, the part of the black phosphorous film layer is directly disposed on the surface of the first electrode, that is, when it is perpendicular to the surface of the substrate.
  • the two are stacked and connected, or when the black phosphorous film layer is arranged in the channel structure and is in contact with the end of the first electrode close to the second electrode, that is, in parallel to the In the direction of the surface of the substrate, the first electrode and the black phosphorous film layer are arranged in sequence and connected in contact.
  • part of the molybdenum disulfide layer is disposed on the surface of the second electrode, or the molybdenum disulfide layer is disposed in the channel structure and is close to the second electrode at one end of the first electrode Contact connection. That is to say, when part of the molybdenum disulfide layer is disposed on the surface of the second electrode, the part of the molybdenum disulfide layer is directly disposed on the surface of the second electrode, that is, when it is perpendicular to the surface of the substrate.
  • the two are stacked and connected, or when the molybdenum disulfide layer is arranged in the channel structure and is in contact with the end of the second electrode close to the first electrode, that is, in parallel to the In the direction of the surface of the substrate, the second electrode and the molybdenum disulfide layer are sequentially arranged and connected in contact.
  • part of the black phosphorous film layer is disposed on the surface of the first electrode, and part of the molybdenum disulfide layer is disposed on the surface of the second electrode.
  • the overlap area of the orthographic projection of the black phosphorous film layer on the substrate and the orthographic projection of the molybdenum disulfide layer on the substrate is the same as the orthographic projection of the graphene layer on the substrate.
  • the projection area ratio is 1: (0.2-5).
  • the black phosphorus/graphene/molybdenum disulfide heterojunction can be better used to improve the dark current of the photodetector.
  • the overlap area of the orthographic projection of the black phosphorous film layer on the substrate and the orthographic projection of the molybdenum disulfide layer on the substrate is the same as the orthographic projection of the graphene layer on the substrate.
  • the projections are completely overlapped, which is beneficial to reduce the dark current of the photodetector and improve the fast response.
  • the black phosphorous film layer, the graphene layer and the molybdenum disulfide layer are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode, and is used in the first electrode and/or the surface of the second electrode.
  • the small cracks and cracks can be repaired to prevent the cracks and cracks from affecting the work of the photodetector, thereby realizing a self-repairing process and increasing the service life of the photodetector.
  • the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is disposed on a side surface of the electrode base close to the first electrode and/or the second electrode.
  • the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer , At least one of polyvinyl alcohol and its derivatives.
  • the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the present invention can efficiently detect visible light and infrared light at the same time, can realize low dark current, fast response photoelectric detection, high sensitivity, wide detection band, and widening Its scope of application.
  • the present invention provides a method for preparing a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction, including:
  • a black phosphorus film, a graphene film, and a molybdenum disulfide film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are in contact with the black phosphorus film and the molybdenum disulfide film, respectively Connected to obtain a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction.
  • the black phosphorous film, the graphene film, and the molybdenum disulfide film may be prepared by, but not limited to, the stripping method.
  • the preparation method further includes:
  • An electrode material is deposited on the self-healing layer to form a self-healing electrode.
  • the preparation method of the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the invention is simple and easy to operate, and can produce a photodetector with low dark current and fast response.
  • the present invention provides a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction.
  • the existing photodetector is solved
  • the problem of excessive dark current realizes low dark current, fast response, high sensitivity, wide-band photoelectric detection, and the photodetector can efficiently detect visible light and infrared light at the same time, which is conducive to its wide application.
  • the invention also provides a method for preparing a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction. The method is simple and easy to operate, and can produce a photodetector with low dark current and fast response.
  • FIG. 1 is a schematic structural diagram of a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction according to another embodiment of the present invention.
  • FIG. 3 is a flow chart of a method for manufacturing a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction according to an embodiment of the present invention.
  • Fig. 4 is a test result diagram of a photodetector based on a black phosphorous/graphene/molybdenum disulfide heterojunction provided in Example 1 of the present invention.
  • Fig. 4 (a) is an IV curve diagram under a non-light condition
  • Fig. 4 The middle (b) is the It curve when there is no light and there is light alternately.
  • Figure 5 is a graph of the test results of a black phosphorous/molybdenum disulfide-based photodetector provided by the comparative example of the present invention.
  • Figure 5 (a) is an IV curve diagram under non-light conditions
  • Figure 5 (b) is a graph showing the results of a photodetector based on black phosphorous/molybdenum disulfide. It graph when light and light alternately appear.
  • a photodetector based on a black phosphorous/graphene/molybdenum disulfide heterojunction which includes a substrate 10, a first electrode 20, a second electrode 30, and a black phosphorous film
  • the layer 40, the graphene layer 50 and the molybdenum disulfide layer 60, the first electrode 20 and the second electrode 30 are arranged on one side surface of the substrate 10 at intervals, and a channel structure is formed between the first electrode 20 and the second electrode 30, black
  • the phosphorous film layer 40, the graphene layer 50 and the molybdenum disulfide layer 60 are sequentially stacked and arranged in the channel structure, and the first electrode 20 and the second electrode 30 are in contact and connected with the black phosphorous film layer 40 and the molybdenum disulfide layer 60, respectively.
  • the photodetector by setting the black phosphorus/graphene/molybdenum disulfide heterojunction in the photodetector, the photodetector has the ability to efficiently detect visible light and infrared light at room temperature, and at the same time has very low darkness.
  • the current leads to high photoelectric response sensitivity of the photodetector.
  • the substrate 10 may be a flexible substrate or a rigid substrate.
  • the material of the substrate 10 includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane.
  • the substrate 10 It is a flexible substrate to improve the flexibility of the photodetector and further broaden the application range of the photodetector. It can be used but not limited to the field of flexible electronics.
  • the substrate 10 may be, but not limited to, a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate.
  • the size of the substrate 10 is not limited, and the specific size can be selected according to actual needs.
  • the thickness of the substrate 10 is 100 ⁇ m-1000 ⁇ m. Further, the thickness of the substrate 10 is 300 ⁇ m-800 ⁇ m.
  • the material of the first electrode 20 and the second electrode 30 includes at least one of gold, silver, platinum, copper, chromium and titanium.
  • the materials of the first electrode 20 and the second electrode 30 may be the same or different, which is not limited.
  • the first electrode 20 and the second electrode 30 include a connection layer and a metal layer, and the connection layer is in contact with the substrate 10.
  • the material of the connection layer includes chromium and/or titanium
  • the material of the metal layer includes at least one of gold, silver, platinum and copper.
  • connection layer in addition to being used for conducting electricity, the connection layer also plays a role in connection, so that the metal layer and the substrate 10 are better adhered and connected, and the bonding force between the first electrode 20 and the second electrode 30 and the substrate 10 is improved.
  • the thickness of the connection layer is 5 nm-10 nm, and the thickness of the metal layer is 20 nm-80 nm. Further, the thickness of the connection layer is 7nm-9nm, and the thickness of the metal layer is 23nm-71nm.
  • both the first electrode 20 and the second electrode 30 are formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate 10, the thickness of the chromium layer is 5nm-10nm, and the thickness of the gold layer is 20nm -80nm.
  • the thickness of the first electrode 20 is 25 nm-90 nm, and the thickness of the second electrode 30 is 25 nm-90 nm. Further, the thickness of the first electrode 20 is 30 nm-80 nm, and the thickness of the second electrode 30 is 30 nm-80 nm.
  • the distance between the first electrode 20 and the second electrode 30 is 1 ⁇ m-15 ⁇ m. That is, the size of the channel structure formed between the first electrode 20 and the second electrode 30 in the first direction is 1 ⁇ m-15 ⁇ m.
  • the first electrode 20 and the second electrode 30 are respectively in contact with the black phosphorous film layer 40 and the molybdenum disulfide layer 60, so the first electrode can be used as a drain and the second electrode can be used as a source.
  • the black phosphorus film layer 40 is composed of a single layer of black phosphorus or multiple layers of black phosphorus
  • the graphene layer 50 is composed of a single layer of graphene or multiple layers of graphene
  • the molybdenum disulfide layer 60 is composed of a single layer of disulfide. Molybdenum composition or multi-layer molybdenum disulfide composition.
  • the single-layer molybdenum disulfide has a direct band gap with a size of about 1.9eV
  • the multilayer molybdenum disulfide has an indirect band gap with a size of about 1.2eV
  • the single-layer black phosphorus (with a size of about 2eV)
  • To multilayer black phosphorus (about 0.3eV) are all direct band gaps.
  • the energy band gap of the black phosphorus/graphene/molybdenum disulfide heterojunction determines the photon energy required to excite the electronic transition, the range of response photon frequencies, and the applicable spectral range, so that the response spectral range of the photodetector can be adjusted. Conducive to broaden its application scenarios.
  • the thickness of the black phosphorous film layer 40 is 0.5nm-50nm
  • the thickness of the graphene layer 50 is 0.3nm-15nm
  • the thickness of the molybdenum disulfide layer 60 is 0.6nm-50nm, adjusting the photodetector The response spectrum range, and is conducive to achieve low dark current effect.
  • the thickness of the black phosphorous film layer 40 is 0.5 nm-40 nm
  • the thickness of the graphene layer 50 is 0.3 nm-10 nm
  • the thickness of the molybdenum disulfide layer 60 is 0.6 nm-40 nm, which is beneficial to further reducing the dark current.
  • the black phosphorous film layer 40, the graphene layer 50 and the molybdenum disulfide layer 60 are sequentially stacked and arranged in the channel structure, and the first electrode 20 and the second electrode 30 are respectively connected with the black phosphorous film layer 40 and the molybdenum disulfide layer.
  • Layer 60 is connected in contact.
  • the first electrode 20 is in contact and connection with the black phosphorous film layer 40, and is not in direct contact and connection with the graphene layer 50 and the molybdenum disulfide layer 60
  • the second electrode 30 is in contact and connection with the molybdenum disulfide layer 60 , It is not in direct contact with the black phosphor film layer 40 and the graphene layer 50 to achieve simultaneous efficient detection of visible light and infrared light, reduce dark current, and achieve fast-response photoelectric detection.
  • part of the black phosphorous film layer 40 is disposed on the surface of the first electrode 20, or the black phosphorous film layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30.
  • the black phosphorous film layer 40 when part of the black phosphorous film layer 40 is disposed on the surface of the first electrode 20, the part of the black phosphorous film layer 40 is directly disposed on the surface of the first electrode 20, that is, in the direction perpendicular to the surface of the substrate 10, the two Or when the black phosphorous film layer 40 is arranged in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, that is, in a direction parallel to the surface of the substrate 10, the first electrode 20 and The black phosphorous film layer 40 is arranged in sequence and connected in contact.
  • part of the molybdenum disulfide layer 60 is disposed on the surface of the second electrode 30, or the molybdenum disulfide layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20.
  • the molybdenum disulfide layer 60 when part of the molybdenum disulfide layer 60 is disposed on the surface of the second electrode 30, the part of the molybdenum disulfide layer 60 is directly disposed on the surface of the second electrode 30, that is, in the direction perpendicular to the surface of the substrate 10, the two Or when the molybdenum disulfide layer 60 is arranged in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, that is, in a direction parallel to the surface of the substrate 10, the second electrode 30 and The molybdenum disulfide layers 60 are sequentially arranged and connected in contact.
  • part of the black phosphorous film layer 40 is provided on the surface of the first electrode 20, and a part of the molybdenum disulfide layer 60 is provided on the surface of the second electrode 30.
  • the large contact area on the surface of the first electrode 20 and the large contact area between the molybdenum disulfide layer 60 and the surface of the second electrode 30 are more conducive to improving the responsiveness of the photodetector and reducing dark current.
  • the total thickness of the first electrode 20, the black phosphorous film layer 40 and the graphene layer 50 is equal to the thickness of the second electrode 30, thereby improving the stability of the overall structure.
  • the orthographic projection of the black phosphorous film layer 40 on the surface of the first electrode 20 accounts for 10%-40% of the surface area of the first electrode 20, and the orthographic projection of the molybdenum disulfide layer 60 on the surface of the second electrode 30 accounts for the second electrode. 30% of the surface area is 10%-40%, further reducing the dark current of the photodetector and improving the fast response of the photodetector.
  • a part of the black phosphorous film layer 40 is disposed on the surface of the first electrode 20, a part of the black phosphorous film layer 40 is in contact with the substrate 10, and a part of the molybdenum disulfide layer 60 is disposed on the surface of the second electrode 30.
  • the surface of the black phosphorous film layer 40 is not parallel to the surface of the substrate 10 and is arranged obliquely.
  • the thickness of the first electrode 20 is on the order of nanometers
  • the length of the black phosphorous film layer 40 is on the order of microns
  • the degree of inclination of the black phosphorous film layer 40 can be ignore.
  • part of the black phosphorous film layer 40 is disposed on the surface of the first electrode 20
  • part of the molybdenum disulfide layer 60 is disposed on the surface of the second electrode 30, and part of the molybdenum disulfide layer 60 is in contact with the substrate 10.
  • the surface of the molybdenum disulfide layer 60 is not parallel to the surface of the substrate 10 and is arranged obliquely.
  • the thickness of the second electrode 30 is on the order of nanometers, the length of the molybdenum disulfide layer 60 is on the order of micrometers, and the degree of inclination of the molybdenum disulfide layer 60 can be ignore.
  • the black phosphorous film layer 40 when the black phosphorous film layer 40 is arranged in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, the total of the black phosphorous film layer 40 and the graphene layer 50 The thickness is equal to the thickness of the second electrode 30 layer, and part of the molybdenum disulfide layer 60 is provided on the surface of the second electrode 30, thereby improving the stability of the overall structure.
  • the total of the molybdenum disulfide layer 60 and the graphene layer 50 is The thickness is equal to the thickness of the first electrode 20 layer, and part of the black phosphorous film layer 40 is provided on the surface of the first electrode 20, thereby improving the stability of the overall structure.
  • the black phosphorous film layer 40, the graphene layer 50 and the molybdenum disulfide layer 60 are sequentially stacked in the channel structure, including the black phosphorous film layer 40, the graphene layer 50, and the molybdenum disulfide layer 60.
  • the black phosphorous film layer 40 is closer to the substrate 10 than the graphene layer 50 and the molybdenum disulfide layer 60, or the molybdenum disulfide layer 60 is closer to the substrate than the black phosphorous film layer 40 and the graphene layer 50 10.
  • the overlap area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 is the same as the orthographic projection area of the graphene layer 50 on the substrate 10
  • the ratio is 1: (0.2-5).
  • the black phosphorus/graphene/molybdenum disulfide heterojunction can be better used to improve the dark current of the photodetector.
  • the overlap area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 has a ratio of 1:( 1-3).
  • the overlap area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 has a ratio of 1: (1-1.5), it is more conducive to photodetection, while reducing dark current and saving graphene materials.
  • the overlapping area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 is the same as the orthographic projection of the graphene layer 50 on the substrate 10
  • the area ratio is 1:1.
  • the overlap area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 is completely identical to the orthographic projection of the graphene layer 50 on the substrate 10. Overlapping is more conducive to reducing the dark current of the photodetector and improving the fast response. At this time, the space charge region of the black phosphorus/graphene/molybdenum disulfide heterojunction is widened, which reduces the reverse cut-off current of the device under no light conditions, and reduces the dark current to the greatest extent.
  • the black phosphorous film layer 40, the graphene layer 50 and the molybdenum disulfide layer 60 are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
  • the channel structure includes the area between the first electrode 10 and the second electrode 20, and also includes the space above the area.
  • the black phosphorous film layer 40, the graphene layer 50, and the molybdenum disulfide layer 60 may be laminated and disposed in the area between the first electrode 10 and the second electrode 20, or may be disposed on the first electrode 10 and the second electrode. Above the area between 20.
  • the black phosphorous film layer 40, the graphene layer 50, and the molybdenum disulfide layer 60 are stacked in the region between the first electrode 10 and the second electrode 20.
  • a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction is provided.
  • the photodetector further includes a self-healing electrode 70, which is arranged on the first The surface of an electrode 20 and/or a second electrode 30.
  • the self-healing electrode 70 is arranged on the surface of the first electrode 20 and/or the second electrode 30, and is used to prevent the occurrence of small cracks and cracks in the first electrode 20 and/or the second electrode 30.
  • the cracks and cracks are repaired to avoid the occurrence of cracks and cracks from affecting the work of the photoelectric detector, thereby realizing the self-repairing process, and improving the service life of the photoelectric detector.
  • the self-healing electrode 70 includes an electrode base 72 and a self-healing layer 71, and the self-healing layer 71 is disposed on a surface of the electrode base 72 close to the first electrode 20 and/or the second electrode 30.
  • a self-healing layer 71 is provided on all the surface of the electrode base 72.
  • a self-healing layer 71 is provided on a surface portion of the electrode base 72.
  • the orthographic projection of the self-healing layer 71 on the surface of the electrode base 72 accounts for 20%-70% of the surface area of the electrode base 72.
  • the material of the self-healing layer 71 includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer, At least one of polyvinyl alcohol and its derivatives.
  • the material of the self-healing layer 71 may be, but is not limited to, long-chain carbonylation modified polyurethane.
  • the material of the electrode base 72 includes at least one of gold, silver, platinum, copper, chromium and titanium. Further, the electrode base 72 includes an electrode connection layer and an electrode metal layer, and the electrode connection layer is in contact with the self-healing layer 71.
  • the material of the electrode connection layer includes chromium and/or titanium, and the material of the electrode metal layer includes at least one of gold, silver, platinum and copper.
  • the electrode connection layer is used for conducting electricity, but also has a certain connection function, so that the electrode metal layer and the self-healing layer 71 are better adhered and connected, and the bonding force between the electrode base 72 and the self-healing layer 71 is improved.
  • the electrode base 72 is formed by stacking a chromium layer and a gold layer.
  • FIG. 3 is a flowchart of a method for manufacturing a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction according to an embodiment of the present invention, including:
  • S110 Provide a substrate, deposit electrode material on one surface of the substrate, and form a first electrode and a second electrode spaced apart, wherein a channel structure is formed between the first electrode and the second electrode.
  • the electrode material includes at least one of gold, silver, platinum, copper, chromium, and titanium.
  • the materials of the first electrode and the second electrode may be the same or different, which is not limited.
  • the electrode material is deposited by evaporation, sputtering or ion plating.
  • the substrate is pasted on a precision silicon-based mask with electrode patterns, and then placed in an electron beam evaporator to evaporate electrode materials to obtain a substrate with blank electrode patterns. The selection of the substrate, the first electrode and the second electrode are as described above, and will not be repeated here.
  • S120 The black phosphorous film, the graphene film and the molybdenum disulfide film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively contacted and connected with the black phosphorous film layer and the molybdenum disulfide layer to obtain a black phosphorous film/molybdenum disulfide film.
  • the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction includes a substrate, a first electrode, a second electrode, a black phosphorus film layer, a graphene layer and a molybdenum disulfide layer, the first electrode and The second electrode is arranged at intervals on one side surface of the substrate, and a channel structure is formed between the first electrode and the second electrode.
  • the black phosphorous film layer, the graphene layer and the molybdenum disulfide layer are sequentially stacked and arranged in the channel structure.
  • the electrode and the second electrode are respectively in contact with the black phosphorous film layer and the molybdenum disulfide layer.
  • black phosphorous film, graphene film and molybdenum disulfide film correspond to black phosphorous film layer, graphene layer and molybdenum disulfide layer in sequence.
  • the selection of black phosphorous film layer, graphene layer and molybdenum disulfide layer is as described above, I won't repeat them here.
  • black phosphorus film, graphene film, and molybdenum disulfide film can be prepared by, but not limited to, a stripping method.
  • the preparation method further includes: coating a self-healing material on the surface of the first electrode and/or the second electrode to form a self-healing layer; depositing electrode material on the self-healing layer to form a self-healing electrode .
  • the preparation process may be performed after forming the first electrode and the second electrode, or after forming at least one of the black phosphorous film layer, the graphene layer, and the molybdenum disulfide layer, which is not limited.
  • a method for preparing a photodetector based on a black phosphorous/graphene/molybdenum disulfide heterojunction includes: providing a substrate, depositing electrode materials on one side of the substrate, and forming first spaced first The electrode and the second electrode, wherein a channel structure is formed between the first electrode and the second electrode; the black phosphorous film, the graphene film and the molybdenum disulfide film are sequentially stacked in the channel structure, the first electrode and the second electrode The electrodes are in contact with the black phosphorous film and the disulfide film respectively; the self-healing material is coated on the surface of the first electrode and/or the second electrode to form a self-healing layer, and electrode material is deposited on the self-healing layer to form a self-healing electrode , A photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction is obtained. Specifically
  • the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction solveds the dark current of the existing photodetector by setting the black phosphorus/graphene/molybdenum disulfide heterojunction in the photodetector
  • Excessive problems, low dark current, fast response, high sensitivity, wide-band photoelectric detection, and the photodetector can efficiently detect visible light and infrared light at the same time, with low noise and low power consumption, which is conducive to its wide application.
  • the preparation method of the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the invention is simple and easy to operate, and can produce a photodetector with low dark current and fast response.
  • the flexible PET substrate on a precision silicon-based mask with electrode patterns, and then put them into an electron beam evaporator to evaporate the chromium layer and the gold layer respectively.
  • the thickness of the chromium layer is 5nm and the thickness of the gold layer is 40nm.
  • the PET substrate is taken out to obtain a flexible PET substrate with a first electrode and a second electrode arranged at intervals.
  • the thickness of the first electrode and the second electrode is 45nm, and a channel structure is formed between the first electrode and the second electrode. .
  • scotch tape to peel off the black phosphorous and paste it on the PDMS film, and then transfer the black phosphorous film to the flexible PET substrate on a two-dimensional material fixed-point transfer platform.
  • the thickness of the black phosphorous film is 17nm.
  • the thickness of the graphene film is 7nm
  • the thickness of the molybdenum disulfide film is 12nm
  • the black phosphorous film, graphene film and Molybdenum disulfide thin films are sequentially stacked and arranged in the channel structure to obtain a black phosphorus/graphene/molybdenum disulfide heterojunction.
  • Part of the black phosphorus film is arranged on the surface of the first electrode, and part of the molybdenum disulfide film is arranged on the surface of the second electrode.
  • the self-healing material is uniformly dropped on the outer periphery of the first electrode and the second electrode, and after the film is formed, the metal hollow mask is used, and the chromium layer and the gold layer are evaporated with an electron beam evaporator to form the electrode matrix, and the self-healing electrode is obtained, which is based on Black phosphorus/graphene/molybdenum disulfide heterojunction photodetector.
  • the substrate is taken out to obtain a polydimethylsiloxane substrate with a first electrode and a second electrode spaced apart.
  • the thickness of the first electrode and the second electrode is 60nm, and a channel is formed between the first electrode and the second electrode structure.
  • the thickness of the black phosphorus film is 25nm, the thickness of the graphene film is 5nm, and the thickness of the molybdenum disulfide film is 18nm.
  • Black phosphorus film, graphene film and molybdenum disulfide film are stacked in the channel structure in order to obtain black phosphorus/graphene/molybdenum disulfide heterojunction.
  • the first electrode and the second electrode are respectively connected with black phosphorus film and disulfide film.
  • Molybdenum thin film contact connection that is, a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction is prepared.
  • the flexible PET substrate is pasted on a precision silicon-based mask with electrode patterns, the first electrode and the second electrode composed of a titanium layer and a copper layer are formed by sputtering, and finally the PET substrate is taken out to obtain a spaced-apart
  • the thickness of black phosphorous film is 30nm
  • the thickness of graphene film is 10nm
  • the thickness of molybdenum disulfide film is 15nm
  • black phosphorous film, graphite The olefin film and the molybdenum disulfide film are stacked in the channel structure in sequence.
  • the overlap area of the orthographic projection of the black phosphorous film on the substrate and the orthographic projection of the molybdenum disulfide film on the substrate, and the orthographic projection of the graphene film on the substrate Completely overlap to obtain a black phosphorus/graphene/molybdenum disulfide heterojunction.
  • the first electrode and the second electrode are in contact with the black phosphorus film and the molybdenum disulfide film, respectively, which is based on black phosphorus/graphene/molybdenum disulfide. Heterojunction photodetector.
  • the flexible PET substrate on a precision silicon-based mask with electrode patterns, and then put them into an electron beam evaporator to evaporate the chromium layer and the gold layer respectively.
  • the thickness of the chromium layer is 5nm and the thickness of the gold layer is 40nm.
  • the PET substrate is taken out to obtain a flexible PET substrate with a first electrode and a second electrode arranged at intervals.
  • the thickness of the first electrode and the second electrode is 45nm, and a channel structure is formed between the first electrode and the second electrode. .
  • the thickness of the black phosphorous film is 17nm.
  • the thickness of the molybdenum disulfide film is 12nm.
  • the black phosphorus film and the molybdenum disulfide film are stacked in the channel structure in order to obtain black phosphorus/molybdenum disulfide
  • part of the black phosphorous film is arranged on the surface of the first electrode
  • part of the molybdenum disulfide film is arranged on the surface of the second electrode.
  • the self-healing material is evenly dropped on the outer periphery of the first electrode and the second electrode.
  • the metal hollow mask is used, and the chromium layer and the gold layer are vapor-deposited with an electron beam evaporator to form the electrode matrix to obtain the self-healing electrode.
  • Photodetector based on black phosphorus/molybdenum disulfide.
  • the photodetectors prepared in Example 1 and the comparative example were placed on the probe platform of the semiconductor characteristic analyzer, and the two probes of the probe station were selected to contact the first electrode and the second electrode of the detector respectively.
  • Self-healing electrode Open the semiconductor characteristic analyzer test software, select the voltage scan mode for the drain probe, and the scan range is -1V to 1V. Run the test software to get the IV diagram of the detector in the absence of light. Introduce a 655nm laser, adjust its power intensity to 150mW/cm 2 , irradiate it vertically on the photodetector, set the voltage of the first electrode to 1V and the voltage of the second electrode to 0V, run the software to get the time-dependent light on and off Graph of It.
  • Figure 4 is the test result diagram of the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided in Example 1, and Figure 4 (a) is without The IV curve diagram under light conditions shows that the photodetector has a significant rectification effect, and the dark current is very small when the voltage is reverse biased; Figure 4 (b) is the It curve diagram when there is no light and there is light alternately. It can be seen that the ratio of the current when there is light to the current when there is no light is large, indicating that the sensitivity of the photodetector is high. Fig.
  • FIG. 5 is a graph of the test results of a photodetector based on black phosphorous/molybdenum disulfide provided by the comparative example of the present invention.
  • (a) in Fig. 5 is an IV curve graph under non-light conditions. It can be seen that the rectification effect is not obvious. The dark current is very large when the voltage is reverse biased;
  • Figure 5 (b) is the It curve when there is no light and there is light alternately. It can be seen that the ratio of the current when there is light to the current when there is no light is very small. Indicates that the sensitivity of the photodetector is low.
  • the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the present invention can significantly reduce the dark current of the photodetector, improve the sensitivity of the photodetector, and enable it to respond quickly.

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Abstract

A photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction, comprising a substrate (10), a first electrode (20), a second electrode (30), a black phosphorus thin film layer (40), a graphene (50), and a molybdenum disulfide layer layer (60). The first electrode (20) and the second electrode (30) are arranged at an interval on a surface on one side of the substrate (10), the first electrode (20) and the second electrode (30) forming a channel structure. The black phosphorus thin film layer (40), the graphene layer (50), the and molybdenum disulfide layer (60) are sequentially stacked in the channel structure, the first electrode (20) and the second electrode (30) contacting the black phosphorus thin film layer (40) and the molybdenum disulfide layer (60) respectively. The photodetector features little dark current and good responsiveness, and can make possible highly flexible broadband photodetection, aiding broad application thereof. A method for preparing the photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction, the method being simple and easy to operate.

Description

基于黑磷/石墨烯/二硫化钼异质结的光电探测器及其制备方法Photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction and preparation method thereof
本发明要求2019年10月25日递交的发明名称为“基于黑磷/石墨烯/二硫化钼异质结的光电探测器及其制备方法”的申请号201911026271.3的在先申请优先权,上述在先申请的内容以引入的方式并入本文本中。The present invention claims the priority of the prior application of the application number 201911026271.3 filed on October 25, 2019 under the title of "Black Phosphorus/Graphene/Molybdenum Disulfide Heterojunction-Based Photodetector and Its Preparation Method". The content of the first application is incorporated into this text by way of introduction.
技术领域Technical field
本发明涉及光探测器领域,具体涉及一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器及其制备方法。The invention relates to the field of photodetectors, in particular to a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction and a preparation method thereof.
背景技术Background technique
光电探测器是将光信号转换成电信号的装置。光电探测器用途广泛,涵盖军事和国民经济的各个领域,如在可见光和近红外波段主要用于射线测量和探测、工业自动控制、光度计量等。A photodetector is a device that converts optical signals into electrical signals. Photoelectric detectors have a wide range of uses, covering various fields of military and national economy. For example, they are mainly used for ray measurement and detection, industrial automatic control, photometric measurement, etc. in the visible and near-infrared bands.
基于硅,砷化镓,铟镓砷等半导体材料的传统光电探测器普遍存在响应波段窄,响应灵敏度不够高等问题。商用的红外波段探测器必须在超低温度下才能正常工作,这使得探测器的成本急剧增加且不易集成。目前科学研究和工业生产领域利用新型二维材料半导体形成的高效光电探测器正在迅猛发展。例如,基于黑磷/二硫化钼范德华异质结的P-N结型光电探测器可以实现覆盖可见光至中红外光的探测范围和快速的响应速度。但是,目前报道的这种P-N结存在暗电流过大的问题,使得探测器的灵敏度较低,使得其在相关领域的应用受到了很大限制。Traditional photodetectors based on semiconductor materials such as silicon, gallium arsenide, and indium gallium arsenide generally have problems such as narrow response bands and insufficient response sensitivity. Commercial infrared band detectors must work normally at ultra-low temperatures, which makes the cost of the detectors sharply increased and is not easy to integrate. At present, high-efficiency photodetectors formed by using new two-dimensional material semiconductors in scientific research and industrial production are developing rapidly. For example, a P-N junction photodetector based on black phosphorus/molybdenum disulfide van der Waals heterojunction can achieve a detection range covering visible light to mid-infrared light and a fast response speed. However, the current reported P-N junction has the problem of excessive dark current, which makes the sensitivity of the detector low, which greatly restricts its application in related fields.
因此,进一步开发具有低暗电流、快速响应、高灵敏度的光电探测器对其发展具有重要意义。Therefore, further development of photodetectors with low dark current, fast response and high sensitivity is of great significance to its development.
发明内容Summary of the invention
为解决上述问题,本发明提供了一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器,通过在光电探测器中设置黑磷/石墨烯/二硫化钼异质结,解决现有光电探测器使用过程中暗电流过大的问题,实现低暗电流、快速响应、高灵敏、宽波段的光电探测,并且该光电探测器可以同时高效探测可见光和红外光,有利于其广泛应用。In order to solve the above problems, the present invention provides a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, which is solved by setting the black phosphorus/graphene/molybdenum disulfide heterojunction in the photodetector. The problem of excessive dark current during the use of the existing photodetector realizes low dark current, fast response, high sensitivity, and wide-band photodetection, and the photodetector can efficiently detect visible light and infrared light at the same time, which is beneficial to its wide range application.
第一方面,本发明提供了一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器,包括基底、第一电极、第二电极、黑磷薄膜层、石墨烯层和二硫化钼层,所述第一电极和所述第二电极间隔设置在所述基底的一侧表面,所述第一电极和所述第二电极之间形成沟道结构,所述黑磷薄膜层、所述石墨烯层和所述二硫化钼层依次层叠设置在所述沟道结构内,所述第一电极和所述第二电极分别与所述黑磷薄膜层和所述二硫化钼层接触连接。In the first aspect, the present invention provides a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, including a substrate, a first electrode, a second electrode, a black phosphorus film layer, a graphene layer, and a disulfide A molybdenum layer, the first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, the black phosphorous film layer, The graphene layer and the molybdenum disulfide layer are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are in contact with the black phosphorous film layer and the molybdenum disulfide layer, respectively connection.
在本发明中,在光电探测器中设置黑磷/石墨烯/二硫化钼异质结,其中,黑磷、石墨烯的带隙很窄,对红外波段的光响应明显,二硫化钼的带隙适合于可见光的探测,因此三者结合形成的异质结可以利用三者的协同作用,使得光电探测器在室温下具有高效探测可见 光和红外光的能力,实现宽波段的光探测;同时,相对于现有技术中的黑磷/二硫化钼P-N结型异质结光电探测器,本发明提供的黑磷/石墨烯/二硫化钼异质结第一次在黑磷/二硫化钼P-N结中增加了石墨烯层,使得异质结的空间电荷区变宽,降低了异质结器件在无光照条件下的反向截止电流,即有效降低了暗电流,提高了光电响应灵敏度。同时石墨烯优异的宽光谱光电探测性能在异质结的内建电场的作用下能够发挥极大的作用,这是由于石墨烯产生的光生电子-空穴对在异质结内建电场作用下,能够快速有效分离,这将有效提高整个探测器的光电响应度,同时能将探测器的探测范围拓宽到太赫兹波段。进一步地,小的暗电流和大的光电响应度将共同导致该探测器的超高的探测度,理论上在红外波段可以达到10 12Jone以上,达到商用红外探测器的探测度。 In the present invention, a black phosphorus/graphene/molybdenum disulfide heterojunction is set in the photodetector. Among them, the band gap of black phosphorus and graphene is very narrow, and the light response to infrared band is obvious, and the band of molybdenum disulfide The gap is suitable for the detection of visible light, so the heterojunction formed by the combination of the three can take advantage of the synergy of the three, so that the photodetector has the ability to efficiently detect visible light and infrared light at room temperature, and realizes wide-band light detection; at the same time, Compared with the black phosphorus/molybdenum disulfide PN junction heterojunction photodetector in the prior art, the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the present invention is the first in the black phosphorus/molybdenum disulfide PN junction The graphene layer is added to the junction, which widens the space charge region of the heterojunction and reduces the reverse cut-off current of the heterojunction device under no light conditions, that is, effectively reduces the dark current and improves the photoelectric response sensitivity. At the same time, the excellent broad-spectrum photodetection performance of graphene can play a great role under the built-in electric field of the heterojunction. This is due to the photogenerated electron-hole pairs generated by the graphene under the built-in electric field of the heterojunction. , Can separate quickly and effectively, which will effectively improve the photoelectric responsivity of the entire detector, and at the same time broaden the detection range of the detector to the terahertz band. Furthermore, the small dark current and the large photoelectric responsivity will jointly lead to the ultra-high detection rate of the detector. Theoretically, it can reach more than 10 12 Jone in the infrared band, which can reach the detection rate of commercial infrared detectors.
在本发明中,所述基底可以为柔性基底,也可以为硬质基底。可选的,所述基底的材质包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚二甲基硅氧烷中的至少一种,此时,基底为柔性基底,提高光电探测器的柔性,可进行拉伸和弯曲,进一步拓宽光电探测器的应用范围,可以但不限于用于柔性电子领域等。具体的,可以但不限于为所述基底为硅基底、二氧化硅基底、聚对苯二甲酸乙二醇酯基底。在本发明中,对所述基底的尺寸不作限定,具体的可以根据实际需要进行选择。In the present invention, the substrate may be a flexible substrate or a rigid substrate. Optionally, the material of the substrate includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane. In this case, the substrate is a flexible substrate. To improve the flexibility of the photodetector, it can be stretched and bent to further broaden the application range of the photodetector, and it can be used in but not limited to the field of flexible electronics. Specifically, but not limited to, the substrate may be a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate. In the present invention, the size of the substrate is not limited, and the specific size can be selected according to actual needs.
在本发明中,所述探测器的探测范围为紫外波段至太赫兹波段。In the present invention, the detection range of the detector is from the ultraviolet band to the terahertz band.
在本发明中,所述探测器的探测范围大于10 12Jone。进一步的,所述探测器的探测范围大于10 14Jone。更进一步的,所述探测器的探测范围大于10 16Jone,比商用红外探测器高出4个数量级。 In the present invention, the detection range of the detector is greater than 10 12 Jone. Further, the detection range of the detector is greater than 10 14 Jone. Furthermore, the detection range of the detector is greater than 10 16 Jone, which is 4 orders of magnitude higher than that of a commercial infrared detector.
可选的,所述第一电极和所述第二电极的材质包括金、银、铂、铜、铬和钛中的至少一种。在本发明中,所述第一电极和所述第二电极的材质可以相同,也可以不同,对此不作限定。Optionally, the material of the first electrode and the second electrode includes at least one of gold, silver, platinum, copper, chromium, and titanium. In the present invention, the materials of the first electrode and the second electrode may be the same or different, which is not limited.
进一步的,所述第一电极和所述第二电极包括连接层和金属层,所述连接层与所述基底接触。更进一步的,所述连接层的材质包括铬和/或钛,所述金属层的材质包括金、银、铂和铜中的至少一种。在本发明中,连接层除了用于导电,还起到一定的连接作用,使得金属层与基底更好的粘附和连接,提高第一电极和第二电极与基底的结合力。具体的,可以但不限于为所述第一电极和所述第二电极均为铬层和金层层叠形成,所述铬层与所述基底接触,所述铬层的厚度为5nm-10nm,所述金层的厚度为20nm-80nm。Further, the first electrode and the second electrode include a connection layer and a metal layer, and the connection layer is in contact with the substrate. Furthermore, the material of the connection layer includes chromium and/or titanium, and the material of the metal layer includes at least one of gold, silver, platinum and copper. In the present invention, in addition to being used for conducting electricity, the connecting layer also has a certain connection function, so that the metal layer and the substrate are better adhered and connected, and the bonding force between the first electrode and the second electrode and the substrate is improved. Specifically, but not limited to, the first electrode and the second electrode are both formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate, and the thickness of the chromium layer is 5 nm-10 nm, The thickness of the gold layer is 20 nm-80 nm.
可选的,所述第一电极的厚度为25nm-90nm,所述第二电极的厚度为25nm-90nm。Optionally, the thickness of the first electrode is 25nm-90nm, and the thickness of the second electrode is 25nm-90nm.
可选的,所述第一电极和所述第二电极的间距为1μm-15μm。也就是说,所述第一电极和所述第二电极之间形成沟道结构在第一方向上的尺寸为1μm-15μm。Optionally, the distance between the first electrode and the second electrode is 1 μm-15 μm. That is, the size of the channel structure formed between the first electrode and the second electrode in the first direction is 1 μm-15 μm.
在本发明中,所述黑磷薄膜层由单层黑磷组成或多层黑磷组成,所述石墨烯层由单层石墨烯组成或多层石墨烯组成,所述二硫化钼层由单层二硫化钼组成或多层二硫化钼组成。具体的,可以但不限于为,单层二硫化钼为直接带隙,大小约为1.9eV,多层二硫化钼为间接带隙,大小约为1.2eV,单层黑磷(大小约为2eV)至多层黑磷(大小约为0.3eV)都是直接带隙。In the present invention, the black phosphorus film layer is composed of a single layer of black phosphorus or multiple layers of black phosphorus, the graphene layer is composed of a single layer of graphene or multiple layers of graphene, and the molybdenum disulfide layer is composed of a single layer of graphene. Layered molybdenum disulfide composition or multilayer molybdenum disulfide composition. Specifically, but not limited to, the single-layer molybdenum disulfide has a direct band gap with a size of about 1.9eV, and the multilayer molybdenum disulfide has an indirect band gap with a size of about 1.2eV, and the single-layer black phosphorus (with a size of about 2eV) ) To multilayer black phosphorus (about 0.3eV) are all direct band gaps.
可选的,所述黑磷薄膜层的厚度为0.5nm-50nm,所述石墨烯层的厚度为0.3nm-15nm,所述二硫化钼层的厚度为0.6nm-50nm。Optionally, the thickness of the black phosphorous film layer is 0.5 nm-50 nm, the thickness of the graphene layer is 0.3 nm-15 nm, and the thickness of the molybdenum disulfide layer is 0.6 nm-50 nm.
可选的,部分所述黑磷薄膜层设置在所述第一电极表面,或所述黑磷薄膜层设置在所述沟道结构内并与所述第一电极靠近所述第二电极的一端接触连接。也就是说,当部分所述黑磷薄膜层设置在所述第一电极表面时,所述黑磷薄膜层的部分是直接设置在所述第一电极的表面,即在垂直于所述基底表面的方向上,两者层叠连接,或当所述黑磷薄膜层设置在所述沟道结构内并与所述第一电极靠近所述第二电极的一端接触连接时,即在平行于所述基底表面的方向上,所述第一电极和所述黑磷薄膜层依次排布并接触连接。Optionally, part of the black phosphorous film layer is disposed on the surface of the first electrode, or the black phosphorous film layer is disposed in the channel structure and is close to the first electrode at one end of the second electrode Contact connection. That is, when part of the black phosphorous film layer is disposed on the surface of the first electrode, the part of the black phosphorous film layer is directly disposed on the surface of the first electrode, that is, when it is perpendicular to the surface of the substrate. In the direction, the two are stacked and connected, or when the black phosphorous film layer is arranged in the channel structure and is in contact with the end of the first electrode close to the second electrode, that is, in parallel to the In the direction of the surface of the substrate, the first electrode and the black phosphorous film layer are arranged in sequence and connected in contact.
可选的,部分所述二硫化钼层设置在所述第二电极表面,或所述二硫化钼层设置在所述沟道结构内并与所述第二电极靠近所述第一电极的一端接触连接。也就是说,当部分所述二硫化钼层设置在所述第二电极表面时,所述二硫化钼层的部分是直接设置在所述第二电极的表面,即在垂直于所述基底表面的方向上,两者层叠连接,或当所述二硫化钼层设置在所述沟道结构内并与所述第二电极靠近所述第一电极的一端接触连接时,即在平行于所述基底表面的方向上,所述第二电极和所述二硫化钼层依次排布并接触连接。Optionally, part of the molybdenum disulfide layer is disposed on the surface of the second electrode, or the molybdenum disulfide layer is disposed in the channel structure and is close to the second electrode at one end of the first electrode Contact connection. That is to say, when part of the molybdenum disulfide layer is disposed on the surface of the second electrode, the part of the molybdenum disulfide layer is directly disposed on the surface of the second electrode, that is, when it is perpendicular to the surface of the substrate. In the direction, the two are stacked and connected, or when the molybdenum disulfide layer is arranged in the channel structure and is in contact with the end of the second electrode close to the first electrode, that is, in parallel to the In the direction of the surface of the substrate, the second electrode and the molybdenum disulfide layer are sequentially arranged and connected in contact.
进一步的,部分所述黑磷薄膜层设置在所述第一电极表面,部分所述二硫化钼层设置在所述第二电极表面。Further, part of the black phosphorous film layer is disposed on the surface of the first electrode, and part of the molybdenum disulfide layer is disposed on the surface of the second electrode.
可选的,所述黑磷薄膜层在所述基底上的正投影与所述二硫化钼层在所述基底上的正投影的重合区域,与所述石墨烯层在所述基底上的正投影面积比为1:(0.2-5)。此时可以更好地使黑磷/石墨烯/二硫化钼异质结发挥作用,改善光电探测器的暗电流。Optionally, the overlap area of the orthographic projection of the black phosphorous film layer on the substrate and the orthographic projection of the molybdenum disulfide layer on the substrate is the same as the orthographic projection of the graphene layer on the substrate. The projection area ratio is 1: (0.2-5). At this time, the black phosphorus/graphene/molybdenum disulfide heterojunction can be better used to improve the dark current of the photodetector.
可选的,所述黑磷薄膜层在所述基底上的正投影与所述二硫化钼层在所述基底上的正投影的重合区域,与所述石墨烯层在所述基底上的正投影完全重叠,有利于降低光电探测器的暗电流,提高快速响应。Optionally, the overlap area of the orthographic projection of the black phosphorous film layer on the substrate and the orthographic projection of the molybdenum disulfide layer on the substrate is the same as the orthographic projection of the graphene layer on the substrate. The projections are completely overlapped, which is beneficial to reduce the dark current of the photodetector and improve the fast response.
在本发明中,所述黑磷薄膜层、所述石墨烯层和所述二硫化钼层之间通过范德华力连接,形成范德华力异质结,使得光电探测器整体结构稳定。In the present invention, the black phosphorous film layer, the graphene layer and the molybdenum disulfide layer are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
可选的,所述光电探测器还包括自修复电极,所述自修复电极设置在所述第一电极和/或所述第二电极的表面。Optionally, the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode.
在本发明中,光电探测器还包括自修复电极,所述自修复电极设置在所述第一电极和/或所述第二电极的表面,用于在所述第一电极和/或所述第二电极出现细小裂痕、裂缝时,可以对出现细小裂痕、裂缝进行修复,避免出现的裂痕、裂缝对光电探测器的工作产生影响,进而实现自修复过程,提高了光电探测器的使用寿命。In the present invention, the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode, and is used in the first electrode and/or the surface of the second electrode. When small cracks and cracks appear on the second electrode, the small cracks and cracks can be repaired to prevent the cracks and cracks from affecting the work of the photodetector, thereby realizing a self-repairing process and increasing the service life of the photodetector.
进一步的,所述自修复电极包括电极基体和自修复层,所述自修复层设置在所述电极基体靠近所述第一电极和/或所述第二电极的一侧表面。Further, the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is disposed on a side surface of the electrode base close to the first electrode and/or the second electrode.
更进一步的,所述自修复层的材质包括聚氨酯、环氧树脂、乙烯-醋酸乙烯酯共聚物、聚酰亚胺、聚己内酯、聚乳酸、聚乙醇酸、聚乳酸-羟基乙酸共聚物、聚乙烯醇及其衍生物中的至少一种。Furthermore, the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer , At least one of polyvinyl alcohol and its derivatives.
本发明提供的基于黑磷/石墨烯/二硫化钼异质结的光电探测器可以同时高效探测可见 光和红外光,可以实现低暗电流、快速响应的光电探测,灵敏度高、探测波段宽,拓宽其应用范围。The photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the present invention can efficiently detect visible light and infrared light at the same time, can realize low dark current, fast response photoelectric detection, high sensitivity, wide detection band, and widening Its scope of application.
第二方面,本发明提供了一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器的制备方法,包括:In the second aspect, the present invention provides a method for preparing a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction, including:
提供基底,在所述基底一侧表面沉积电极材料,形成间隔设置的第一电极和第二电极,其中,所述第一电极和所述第二电极之间形成沟道结构;Providing a substrate, depositing electrode material on one side surface of the substrate to form a first electrode and a second electrode arranged at intervals, wherein a channel structure is formed between the first electrode and the second electrode;
将黑磷薄膜、石墨烯薄膜和二硫化钼薄膜依次层叠设置在所述沟道结构内,所述第一电极和所述第二电极分别与所述黑磷薄膜和所述二硫化钼薄膜接触连接,得到基于黑磷/石墨烯/二硫化钼异质结的光电探测器。A black phosphorus film, a graphene film, and a molybdenum disulfide film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are in contact with the black phosphorus film and the molybdenum disulfide film, respectively Connected to obtain a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction.
在本发明中,可以但不限于为所述黑磷薄膜、所述石墨烯薄膜和所述二硫化钼薄膜通过剥离法制备得到。In the present invention, the black phosphorous film, the graphene film, and the molybdenum disulfide film may be prepared by, but not limited to, the stripping method.
可选的,所述制备方法还包括:Optionally, the preparation method further includes:
将自修复材料涂覆在所述第一电极和/或所述第二电极的表面,形成自修复层;Coating a self-healing material on the surface of the first electrode and/or the second electrode to form a self-healing layer;
在所述自修复层上沉积电极材料,形成自修复电极。An electrode material is deposited on the self-healing layer to form a self-healing electrode.
本发明提供的基于黑磷/石墨烯/二硫化钼异质结的光电探测器的制备方法简单易操作,可以制得低暗电流、快速响应的光电探测器。The preparation method of the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the invention is simple and easy to operate, and can produce a photodetector with low dark current and fast response.
本发明的有益效果:The beneficial effects of the present invention:
本发明提供了一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器,通过在光电探测器中设置黑磷/石墨烯/二硫化钼异质结,解决现有光电探测器暗电流过大的问题,实现低暗电流、快速响应、高灵敏、宽波段的光电探测,并且该光电探测器可以同时高效探测可见光和红外光,有利于其广泛应用。本发明还提供了一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器的制备方法,该方法简单易操作,可以制得低暗电流、快速响应的光电探测器。The present invention provides a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction. By setting the black phosphorus/graphene/molybdenum disulfide heterojunction in the photodetector, the existing photodetector is solved The problem of excessive dark current realizes low dark current, fast response, high sensitivity, wide-band photoelectric detection, and the photodetector can efficiently detect visible light and infrared light at the same time, which is conducive to its wide application. The invention also provides a method for preparing a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction. The method is simple and easy to operate, and can produce a photodetector with low dark current and fast response.
附图说明Description of the drawings
图1为本发明一实施例提供的一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器的结构示意图。FIG. 1 is a schematic structural diagram of a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction according to an embodiment of the present invention.
图2为本发明另一实施例提供的一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器的结构示意图。2 is a schematic structural diagram of a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction according to another embodiment of the present invention.
图3为本发明一实施例提供的一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器的制备方法流程图。3 is a flow chart of a method for manufacturing a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction according to an embodiment of the present invention.
图4为本发明实施例1提供的基于黑磷/石墨烯/二硫化钼异质结的光电探测器的测试结果图,图4中(a)为无光条件下的I-V曲线图,图4中(b)为在无光和有光交替出现时的I-t曲线图。Fig. 4 is a test result diagram of a photodetector based on a black phosphorous/graphene/molybdenum disulfide heterojunction provided in Example 1 of the present invention. In Fig. 4 (a) is an IV curve diagram under a non-light condition, and Fig. 4 The middle (b) is the It curve when there is no light and there is light alternately.
图5为本发明对比例提供的基于黑磷/二硫化钼的光电探测器的测试结果图,图5中(a)为无光条件下的I-V曲线图,图5中(b)为在无光和有光交替出现时的I-t曲线图。Figure 5 is a graph of the test results of a black phosphorous/molybdenum disulfide-based photodetector provided by the comparative example of the present invention. Figure 5 (a) is an IV curve diagram under non-light conditions, and Figure 5 (b) is a graph showing the results of a photodetector based on black phosphorous/molybdenum disulfide. It graph when light and light alternately appear.
具体实施方式Detailed ways
以下所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。The following are the preferred embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications are also considered This is the protection scope of the present invention.
请参照图1,为本发明一实施例提供了一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器,包括基底10、第一电极20、第二电极30、黑磷薄膜层40、石墨烯层50和二硫化钼层60,第一电极20和第二电极30间隔设置在基底10的一侧表面,第一电极20和第二电极30之间形成沟道结构,黑磷薄膜层40、石墨烯层50和二硫化钼层60依次层叠设置在沟道结构内,第一电极20和第二电极30分别与黑磷薄膜层40和二硫化钼层60接触连接。Please refer to FIG. 1, for an embodiment of the present invention, a photodetector based on a black phosphorous/graphene/molybdenum disulfide heterojunction is provided, which includes a substrate 10, a first electrode 20, a second electrode 30, and a black phosphorous film The layer 40, the graphene layer 50 and the molybdenum disulfide layer 60, the first electrode 20 and the second electrode 30 are arranged on one side surface of the substrate 10 at intervals, and a channel structure is formed between the first electrode 20 and the second electrode 30, black The phosphorous film layer 40, the graphene layer 50 and the molybdenum disulfide layer 60 are sequentially stacked and arranged in the channel structure, and the first electrode 20 and the second electrode 30 are in contact and connected with the black phosphorous film layer 40 and the molybdenum disulfide layer 60, respectively.
在本发明中,通过在光电探测器中设置黑磷/石墨烯/二硫化钼异质结,使得光电探测器在室温下具有高效探测可见光和红外光的能力的同时,还具有非常低的暗电流,导致光电探测器的光电响应灵敏度高。In the present invention, by setting the black phosphorus/graphene/molybdenum disulfide heterojunction in the photodetector, the photodetector has the ability to efficiently detect visible light and infrared light at room temperature, and at the same time has very low darkness. The current leads to high photoelectric response sensitivity of the photodetector.
在本发明中,基底10可以为柔性基底,也可以为硬质基底。在本发明一实施方式中,基底10的材质包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚二甲基硅氧烷中的至少一种,此时,基底10为柔性基底,提高光电探测器的柔性,进一步拓宽光电探测器的应用范围,可以但不限于用于柔性电子领域等。具体的,可以但不限于为基底10为硅基底、二氧化硅基底、聚对苯二甲酸乙二醇酯基底。在本发明中,对基底10的尺寸不作限定,具体的可以根据实际需要进行选择。可选的,基底10的厚度为100μm-1000μm。进一步的,基底10的厚度为300μm-800μm。In the present invention, the substrate 10 may be a flexible substrate or a rigid substrate. In one embodiment of the present invention, the material of the substrate 10 includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane. In this case, the substrate 10 It is a flexible substrate to improve the flexibility of the photodetector and further broaden the application range of the photodetector. It can be used but not limited to the field of flexible electronics. Specifically, the substrate 10 may be, but not limited to, a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate. In the present invention, the size of the substrate 10 is not limited, and the specific size can be selected according to actual needs. Optionally, the thickness of the substrate 10 is 100 μm-1000 μm. Further, the thickness of the substrate 10 is 300 μm-800 μm.
在本发明一实施方式中,第一电极20和第二电极30的材质包括金、银、铂、铜、铬和钛中的至少一种。在本发明中,第一电极20和第二电极30的材质可以相同,也可以不同,对此不作限定。进一步的,第一电极20和第二电极30包括连接层和金属层,连接层与基底10接触。更进一步的,连接层的材质包括铬和/或钛,金属层的材质包括金、银、铂和铜中的至少一种。在本发明中,连接层除了用于导电,还起到一定的连接作用,使得金属层与基底10更好的粘附和连接,提高第一电极20和第二电极30与基底10的结合力。可选的,连接层的厚度为5nm-10nm,金属层的厚度为20nm-80nm。进一步的,连接层的厚度为7nm-9nm,金属层的厚度为23nm-71nm。在本发明一具体实施例中,第一电极20和第二电极30均为铬层和金层层叠形成,铬层与基底10接触,铬层的厚度为5nm-10nm,金层的厚度为20nm-80nm。In an embodiment of the present invention, the material of the first electrode 20 and the second electrode 30 includes at least one of gold, silver, platinum, copper, chromium and titanium. In the present invention, the materials of the first electrode 20 and the second electrode 30 may be the same or different, which is not limited. Further, the first electrode 20 and the second electrode 30 include a connection layer and a metal layer, and the connection layer is in contact with the substrate 10. Furthermore, the material of the connection layer includes chromium and/or titanium, and the material of the metal layer includes at least one of gold, silver, platinum and copper. In the present invention, in addition to being used for conducting electricity, the connection layer also plays a role in connection, so that the metal layer and the substrate 10 are better adhered and connected, and the bonding force between the first electrode 20 and the second electrode 30 and the substrate 10 is improved. . Optionally, the thickness of the connection layer is 5 nm-10 nm, and the thickness of the metal layer is 20 nm-80 nm. Further, the thickness of the connection layer is 7nm-9nm, and the thickness of the metal layer is 23nm-71nm. In a specific embodiment of the present invention, both the first electrode 20 and the second electrode 30 are formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate 10, the thickness of the chromium layer is 5nm-10nm, and the thickness of the gold layer is 20nm -80nm.
在本发明一实施方式中,第一电极20的厚度为25nm-90nm,第二电极30的厚度为25nm-90nm。进一步的,第一电极20的厚度为30nm-80nm,第二电极30的厚度为30nm-80nm。In one embodiment of the present invention, the thickness of the first electrode 20 is 25 nm-90 nm, and the thickness of the second electrode 30 is 25 nm-90 nm. Further, the thickness of the first electrode 20 is 30 nm-80 nm, and the thickness of the second electrode 30 is 30 nm-80 nm.
在本发明一实施方式中,第一电极20和第二电极30的间距为1μm-15μm。也就是说,第一电极20和第二电极30之间形成沟道结构在第一方向上的尺寸为1μm-15μm。In an embodiment of the present invention, the distance between the first electrode 20 and the second electrode 30 is 1 μm-15 μm. That is, the size of the channel structure formed between the first electrode 20 and the second electrode 30 in the first direction is 1 μm-15 μm.
在本发明中,第一电极20和第二电极30分别与黑磷薄膜层40和二硫化钼层60接触连接,则第一电极可以作为漏极,第二电极可以作为源极。In the present invention, the first electrode 20 and the second electrode 30 are respectively in contact with the black phosphorous film layer 40 and the molybdenum disulfide layer 60, so the first electrode can be used as a drain and the second electrode can be used as a source.
在本发明中,黑磷薄膜层40由单层黑磷组成或多层黑磷组成,石墨烯层50由单层石墨烯组成或多层石墨烯组成,二硫化钼层60由单层二硫化钼组成或多层二硫化钼组成。具 体的,可以但不限于为,单层二硫化钼为直接带隙,大小约为1.9eV,多层二硫化钼为间接带隙,大小约为1.2eV,单层黑磷(大小约为2eV)至多层黑磷(大小约为0.3eV)都是直接带隙。黑磷/石墨烯/二硫化钼异质结的能量带隙决定了激发电子跃迁所需要的光子能量、响应光子频率的范围和适用光谱范围,进而使得光电探测器响应光谱范围可进行调节,有利于拓宽其应用场景。In the present invention, the black phosphorus film layer 40 is composed of a single layer of black phosphorus or multiple layers of black phosphorus, the graphene layer 50 is composed of a single layer of graphene or multiple layers of graphene, and the molybdenum disulfide layer 60 is composed of a single layer of disulfide. Molybdenum composition or multi-layer molybdenum disulfide composition. Specifically, but not limited to, the single-layer molybdenum disulfide has a direct band gap with a size of about 1.9eV, and the multilayer molybdenum disulfide has an indirect band gap with a size of about 1.2eV, and the single-layer black phosphorus (with a size of about 2eV) ) To multilayer black phosphorus (about 0.3eV) are all direct band gaps. The energy band gap of the black phosphorus/graphene/molybdenum disulfide heterojunction determines the photon energy required to excite the electronic transition, the range of response photon frequencies, and the applicable spectral range, so that the response spectral range of the photodetector can be adjusted. Conducive to broaden its application scenarios.
在本发明一实施方式中,黑磷薄膜层40的厚度为0.5nm-50nm,石墨烯层50的厚度为0.3nm-15nm,二硫化钼层60的厚度为0.6nm-50nm,调节光电探测器的响应光谱范围,并有利于实现低暗电流效果。进一步的,黑磷薄膜层40的厚度为0.5nm-40nm,石墨烯层50的厚度为0.3nm-10nm,二硫化钼层60的厚度为0.6nm-40nm,有利于进一步降低暗电流。In one embodiment of the present invention, the thickness of the black phosphorous film layer 40 is 0.5nm-50nm, the thickness of the graphene layer 50 is 0.3nm-15nm, and the thickness of the molybdenum disulfide layer 60 is 0.6nm-50nm, adjusting the photodetector The response spectrum range, and is conducive to achieve low dark current effect. Further, the thickness of the black phosphorous film layer 40 is 0.5 nm-40 nm, the thickness of the graphene layer 50 is 0.3 nm-10 nm, and the thickness of the molybdenum disulfide layer 60 is 0.6 nm-40 nm, which is beneficial to further reducing the dark current.
在本发明中,黑磷薄膜层40、石墨烯层50和二硫化钼层60依次层叠设置在沟道结构内,第一电极20和第二电极30分别与黑磷薄膜层40和二硫化钼层60接触连接。在本发明一具体实施例中,第一电极20与黑磷薄膜层40接触连接,与石墨烯层50和二硫化钼层60不直接接触连接,第二电极30与二硫化钼层60接触连接,与黑磷薄膜层40和石墨烯层50不直接接触连接,实现同时高效探测可见光和红外光,以及降低暗电流,实现快速响应的光电探测。In the present invention, the black phosphorous film layer 40, the graphene layer 50 and the molybdenum disulfide layer 60 are sequentially stacked and arranged in the channel structure, and the first electrode 20 and the second electrode 30 are respectively connected with the black phosphorous film layer 40 and the molybdenum disulfide layer. Layer 60 is connected in contact. In a specific embodiment of the present invention, the first electrode 20 is in contact and connection with the black phosphorous film layer 40, and is not in direct contact and connection with the graphene layer 50 and the molybdenum disulfide layer 60, and the second electrode 30 is in contact and connection with the molybdenum disulfide layer 60 , It is not in direct contact with the black phosphor film layer 40 and the graphene layer 50 to achieve simultaneous efficient detection of visible light and infrared light, reduce dark current, and achieve fast-response photoelectric detection.
在本发明一实施方式中,部分黑磷薄膜层40设置在第一电极20表面,或黑磷薄膜层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接。也就是说,当部分黑磷薄膜层40设置在第一电极20表面时,黑磷薄膜层40的部分是直接设置在第一电极20的表面,即在垂直于基底10表面的方向上,两者层叠连接,或当黑磷薄膜层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接时,即在平行于基底10表面的方向上,第一电极20和黑磷薄膜层40依次排布并接触连接。In an embodiment of the present invention, part of the black phosphorous film layer 40 is disposed on the surface of the first electrode 20, or the black phosphorous film layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30. That is, when part of the black phosphorous film layer 40 is disposed on the surface of the first electrode 20, the part of the black phosphorous film layer 40 is directly disposed on the surface of the first electrode 20, that is, in the direction perpendicular to the surface of the substrate 10, the two Or when the black phosphorous film layer 40 is arranged in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, that is, in a direction parallel to the surface of the substrate 10, the first electrode 20 and The black phosphorous film layer 40 is arranged in sequence and connected in contact.
在本发明一实施方式中,部分二硫化钼层60设置在第二电极30表面,或二硫化钼层60设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接。也就是说,当部分二硫化钼层60设置在第二电极30表面时,二硫化钼层60的部分是直接设置在第二电极30的表面,即在垂直于基底10表面的方向上,两者层叠连接,或当二硫化钼层60设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接时,即在平行于基底10表面的方向上,第二电极30和二硫化钼层60依次排布并接触连接。In one embodiment of the present invention, part of the molybdenum disulfide layer 60 is disposed on the surface of the second electrode 30, or the molybdenum disulfide layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20. That is to say, when part of the molybdenum disulfide layer 60 is disposed on the surface of the second electrode 30, the part of the molybdenum disulfide layer 60 is directly disposed on the surface of the second electrode 30, that is, in the direction perpendicular to the surface of the substrate 10, the two Or when the molybdenum disulfide layer 60 is arranged in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, that is, in a direction parallel to the surface of the substrate 10, the second electrode 30 and The molybdenum disulfide layers 60 are sequentially arranged and connected in contact.
在本发明一具体实施例中,如图1所示,部分黑磷薄膜层40设置在第一电极20表面,部分二硫化钼层60设置在第二电极30表面,黑磷薄膜层40与第一电极20表面的接触面积大,二硫化钼层60与第二电极30表面的接触面积大,更有利于提高光电探测器的响应性,降低暗电流。可选的,第一电极20、黑磷薄膜层40和石墨烯层50的总厚度等于第二电极30层的厚度,进而提高整体结构的稳定性。可选的,黑磷薄膜层40在第一电极20表面的正投影占第一电极20表面面积的10%-40%,二硫化钼层60在第二电极30表面的正投影占第二电极30表面面积的10%-40%,进一步降低光电探测器的暗电流,提高光电探测器的快速响应。在本发明一实施例中,部分黑磷薄膜层40设置在第一电极20表面,部分黑磷薄膜层40与基底10接触,部分二硫化钼层60设置在第二电极30表面。此时,黑 磷薄膜层40表面与基底10表面不平行,为倾斜设置,第一电极20的厚度为纳米级,黑磷薄膜层40的长度为微米级,黑磷薄膜层40的倾斜程度可以忽略。在本发明另一实施例中,部分黑磷薄膜层40设置在第一电极20表面,部分二硫化钼层60设置在第二电极30表面,部分二硫化钼层60与基底10接触。此时,二硫化钼层60表面与基底10表面不平行,为倾斜设置,第二电极30的厚度为纳米级,二硫化钼层60的长度为微米级,二硫化钼层60的倾斜程度可以忽略。In a specific embodiment of the present invention, as shown in FIG. 1, part of the black phosphorous film layer 40 is provided on the surface of the first electrode 20, and a part of the molybdenum disulfide layer 60 is provided on the surface of the second electrode 30. The large contact area on the surface of the first electrode 20 and the large contact area between the molybdenum disulfide layer 60 and the surface of the second electrode 30 are more conducive to improving the responsiveness of the photodetector and reducing dark current. Optionally, the total thickness of the first electrode 20, the black phosphorous film layer 40 and the graphene layer 50 is equal to the thickness of the second electrode 30, thereby improving the stability of the overall structure. Optionally, the orthographic projection of the black phosphorous film layer 40 on the surface of the first electrode 20 accounts for 10%-40% of the surface area of the first electrode 20, and the orthographic projection of the molybdenum disulfide layer 60 on the surface of the second electrode 30 accounts for the second electrode. 30% of the surface area is 10%-40%, further reducing the dark current of the photodetector and improving the fast response of the photodetector. In an embodiment of the present invention, a part of the black phosphorous film layer 40 is disposed on the surface of the first electrode 20, a part of the black phosphorous film layer 40 is in contact with the substrate 10, and a part of the molybdenum disulfide layer 60 is disposed on the surface of the second electrode 30. At this time, the surface of the black phosphorous film layer 40 is not parallel to the surface of the substrate 10 and is arranged obliquely. The thickness of the first electrode 20 is on the order of nanometers, the length of the black phosphorous film layer 40 is on the order of microns, and the degree of inclination of the black phosphorous film layer 40 can be ignore. In another embodiment of the present invention, part of the black phosphorous film layer 40 is disposed on the surface of the first electrode 20, part of the molybdenum disulfide layer 60 is disposed on the surface of the second electrode 30, and part of the molybdenum disulfide layer 60 is in contact with the substrate 10. At this time, the surface of the molybdenum disulfide layer 60 is not parallel to the surface of the substrate 10 and is arranged obliquely. The thickness of the second electrode 30 is on the order of nanometers, the length of the molybdenum disulfide layer 60 is on the order of micrometers, and the degree of inclination of the molybdenum disulfide layer 60 can be ignore.
在本发明一具体实施例中,当黑磷薄膜层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接时,黑磷薄膜层40和石墨烯层50的总厚度等于第二电极30层的厚度,部分二硫化钼层60设置在第二电极30表面,进而提高整体结构的稳定性。In a specific embodiment of the present invention, when the black phosphorous film layer 40 is arranged in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, the total of the black phosphorous film layer 40 and the graphene layer 50 The thickness is equal to the thickness of the second electrode 30 layer, and part of the molybdenum disulfide layer 60 is provided on the surface of the second electrode 30, thereby improving the stability of the overall structure.
在本发明一具体实施例中,当二硫化钼层60设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接时,二硫化钼层60和石墨烯层50的总厚度等于第一电极20层的厚度,部分黑磷薄膜层40设置在第一电极20表面,进而提高整体结构的稳定性。In a specific embodiment of the present invention, when the molybdenum disulfide layer 60 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, the total of the molybdenum disulfide layer 60 and the graphene layer 50 is The thickness is equal to the thickness of the first electrode 20 layer, and part of the black phosphorous film layer 40 is provided on the surface of the first electrode 20, thereby improving the stability of the overall structure.
在本发明中,黑磷薄膜层40、石墨烯层50和二硫化钼层60依次层叠设置在沟道结构内,包括黑磷薄膜层40、石墨烯层50和二硫化钼层60依次层叠后设置在沟道结构内,其中,黑磷薄膜层40比石墨烯层50和二硫化钼层60更靠近基底10,或二硫化钼层60比黑磷薄膜层40和石墨烯层50更靠近基底10。In the present invention, the black phosphorous film layer 40, the graphene layer 50 and the molybdenum disulfide layer 60 are sequentially stacked in the channel structure, including the black phosphorous film layer 40, the graphene layer 50, and the molybdenum disulfide layer 60. Set in the channel structure, where the black phosphorous film layer 40 is closer to the substrate 10 than the graphene layer 50 and the molybdenum disulfide layer 60, or the molybdenum disulfide layer 60 is closer to the substrate than the black phosphorous film layer 40 and the graphene layer 50 10.
在本发明一实施方式中,黑磷薄膜层40在基底10上的正投影与二硫化钼层60在基底10上的正投影的重合区域,与石墨烯层50在基底10上的正投影面积比为1:(0.2-5)。此时可以更好地使黑磷/石墨烯/二硫化钼异质结发挥作用,改善光电探测器的暗电流。进一步的,黑磷薄膜层40在基底10上的正投影与二硫化钼层60在基底10上的正投影的重合区域,与石墨烯层50在基底10上的正投影面积比为1:(1-3)。更进一步的,黑磷薄膜层40在基底10上的正投影与二硫化钼层60在基底10上的正投影的重合区域,与石墨烯层50在基底10上的正投影面积比为1:(1-1.5),更有利于光电探测,同时降低暗电流,并节省石墨烯材料。在本发明一具体实施例中,黑磷薄膜层40在基底10上的正投影与二硫化钼层60在基底10上的正投影的重合区域,与石墨烯层50在基底10上的正投影面积比为1:1。In one embodiment of the present invention, the overlap area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 is the same as the orthographic projection area of the graphene layer 50 on the substrate 10 The ratio is 1: (0.2-5). At this time, the black phosphorus/graphene/molybdenum disulfide heterojunction can be better used to improve the dark current of the photodetector. Further, the overlap area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 has a ratio of 1:( 1-3). Furthermore, the overlap area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 has a ratio of 1: (1-1.5), it is more conducive to photodetection, while reducing dark current and saving graphene materials. In a specific embodiment of the present invention, the overlapping area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 is the same as the orthographic projection of the graphene layer 50 on the substrate 10 The area ratio is 1:1.
在本发明一实施方式中,黑磷薄膜层40在基底10上的正投影与二硫化钼层60在基底10上的正投影的重合区域,与石墨烯层50在基底10上的正投影完全重叠,更有利于降低光电探测器的暗电流,提高快速响应。此时,黑磷/石墨烯/二硫化钼异质结的空间电荷区变宽,降低了器件在无光照条件下的反向截止电流,最大程度上降低了暗电流。In one embodiment of the present invention, the overlap area of the orthographic projection of the black phosphorous film layer 40 on the substrate 10 and the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 is completely identical to the orthographic projection of the graphene layer 50 on the substrate 10. Overlapping is more conducive to reducing the dark current of the photodetector and improving the fast response. At this time, the space charge region of the black phosphorus/graphene/molybdenum disulfide heterojunction is widened, which reduces the reverse cut-off current of the device under no light conditions, and reduces the dark current to the greatest extent.
在本发明中,黑磷薄膜层40、石墨烯层50和二硫化钼层60之间通过范德华力连接,形成范德华力异质结,使得光电探测器整体结构稳定。In the present invention, the black phosphorous film layer 40, the graphene layer 50 and the molybdenum disulfide layer 60 are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector is stable.
在本发明中,沟道结构包括第一电极10和第二电极20之间的区域,也包括该区域上方的空间。也就是说,黑磷薄膜层40、石墨烯层50和二硫化钼层60可以层叠设置在第一电极10和第二电极20之间的区域,也可以设置在第一电极10和第二电极20之间的区域的上方。在本发明一实施例中,黑磷薄膜层40、石墨烯层50和二硫化钼层60层叠设置在 第一电极10和第二电极20之间的区域。In the present invention, the channel structure includes the area between the first electrode 10 and the second electrode 20, and also includes the space above the area. In other words, the black phosphorous film layer 40, the graphene layer 50, and the molybdenum disulfide layer 60 may be laminated and disposed in the area between the first electrode 10 and the second electrode 20, or may be disposed on the first electrode 10 and the second electrode. Above the area between 20. In an embodiment of the present invention, the black phosphorous film layer 40, the graphene layer 50, and the molybdenum disulfide layer 60 are stacked in the region between the first electrode 10 and the second electrode 20.
请参照图2,为本发明一实施例提供了一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器,光电探测器还包括自修复电极70,自修复电极70设置在第一电极20和/或第二电极30的表面。Please refer to FIG. 2, for an embodiment of the present invention, a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction is provided. The photodetector further includes a self-healing electrode 70, which is arranged on the first The surface of an electrode 20 and/or a second electrode 30.
在本发明中,自修复电极70设置在第一电极20和/或第二电极30的表面,用于在第一电极20和/或第二电极30出现细小裂痕、裂缝时,可以对出现细小裂痕、裂缝进行修复,避免出现的裂痕、裂缝对光电探测器的工作产生影响,进而实现自修复过程,提高了光电探测器的使用寿命。In the present invention, the self-healing electrode 70 is arranged on the surface of the first electrode 20 and/or the second electrode 30, and is used to prevent the occurrence of small cracks and cracks in the first electrode 20 and/or the second electrode 30. The cracks and cracks are repaired to avoid the occurrence of cracks and cracks from affecting the work of the photoelectric detector, thereby realizing the self-repairing process, and improving the service life of the photoelectric detector.
在本发明一实施方式中,自修复电极70包括电极基体72和自修复层71,自修复层71设置在电极基体72靠近第一电极20和/或第二电极30的一侧表面。在本发明一实施例中,电极基体72一表面全部设置有自修复层71。在本发明另一实施例中,电极基体72一表面部分设置有自修复层71。可选的,自修复层71在电极基体72表面的正投影占电极基体72表面面积的20%-70%。可选的,自修复层71的材质包括聚氨酯、环氧树脂、乙烯-醋酸乙烯酯共聚物、聚酰亚胺、聚己内酯、聚乳酸、聚乙醇酸、聚乳酸-羟基乙酸共聚物、聚乙烯醇及其衍生物中的至少一种。具体的,自修复层71的材质可以但不限于为长链羰基化改性的聚氨酯。可选的,电极基体72的材质包括金、银、铂、铜、铬和钛中的至少一种。进一步的,电极基体72包括电极连接层和电极金属层,电极连接层与自修复层71接触。更进一步的,电极连接层的材质包括铬和/或钛,电极金属层的材质包括金、银、铂和铜中的至少一种。在本发明中,电极连接层除了用于导电,还起到一定的连接作用,使得电极金属层与自修复层71更好的粘附和连接,提高电极基体72与自修复层71的结合力。具体的,可以但不限于为电极基体72为铬层和金层层叠形成。In an embodiment of the present invention, the self-healing electrode 70 includes an electrode base 72 and a self-healing layer 71, and the self-healing layer 71 is disposed on a surface of the electrode base 72 close to the first electrode 20 and/or the second electrode 30. In an embodiment of the present invention, a self-healing layer 71 is provided on all the surface of the electrode base 72. In another embodiment of the present invention, a self-healing layer 71 is provided on a surface portion of the electrode base 72. Optionally, the orthographic projection of the self-healing layer 71 on the surface of the electrode base 72 accounts for 20%-70% of the surface area of the electrode base 72. Optionally, the material of the self-healing layer 71 includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer, At least one of polyvinyl alcohol and its derivatives. Specifically, the material of the self-healing layer 71 may be, but is not limited to, long-chain carbonylation modified polyurethane. Optionally, the material of the electrode base 72 includes at least one of gold, silver, platinum, copper, chromium and titanium. Further, the electrode base 72 includes an electrode connection layer and an electrode metal layer, and the electrode connection layer is in contact with the self-healing layer 71. Furthermore, the material of the electrode connection layer includes chromium and/or titanium, and the material of the electrode metal layer includes at least one of gold, silver, platinum and copper. In the present invention, the electrode connection layer is used for conducting electricity, but also has a certain connection function, so that the electrode metal layer and the self-healing layer 71 are better adhered and connected, and the bonding force between the electrode base 72 and the self-healing layer 71 is improved. . Specifically, it can be, but is not limited to, that the electrode base 72 is formed by stacking a chromium layer and a gold layer.
请参阅图3,为本发明一实施例提供的一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器的制备方法流程图,包括:Please refer to FIG. 3, which is a flowchart of a method for manufacturing a photodetector based on a black phosphorus/graphene/molybdenum disulfide heterojunction according to an embodiment of the present invention, including:
S110:提供基底,在基底一侧表面沉积电极材料,形成间隔设置的第一电极和第二电极,其中,第一电极和第二电极之间形成沟道结构。S110: Provide a substrate, deposit electrode material on one surface of the substrate, and form a first electrode and a second electrode spaced apart, wherein a channel structure is formed between the first electrode and the second electrode.
在S110中,电极材料包括金、银、铂、铜、铬和钛中的至少一种。在本发明中,第一电极和第二电极的材质可以相同,也可以不同,对此不作限定。可选的,通过蒸镀、溅射或离子镀方式沉积电极材料。具体的,可以但不限于为,将基底粘贴在带有电极图案的精密硅基掩膜版上,然后一起放入电子束蒸发仪中蒸镀电极材料,得到带有空白电极图案的基底。其中,基底、第一电极和第二电极的选择如上所述,在此不再赘述。In S110, the electrode material includes at least one of gold, silver, platinum, copper, chromium, and titanium. In the present invention, the materials of the first electrode and the second electrode may be the same or different, which is not limited. Optionally, the electrode material is deposited by evaporation, sputtering or ion plating. Specifically, but not limited to, the substrate is pasted on a precision silicon-based mask with electrode patterns, and then placed in an electron beam evaporator to evaporate electrode materials to obtain a substrate with blank electrode patterns. The selection of the substrate, the first electrode and the second electrode are as described above, and will not be repeated here.
S120:将黑磷薄膜、石墨烯薄膜和二硫化钼薄膜依次层叠设置在沟道结构内,第一电极和第二电极分别与黑磷薄膜层和二硫化钼层接触连接,得到基于黑磷/石墨烯/二硫化钼异质结的光电探测器。S120: The black phosphorous film, the graphene film and the molybdenum disulfide film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively contacted and connected with the black phosphorous film layer and the molybdenum disulfide layer to obtain a black phosphorous film/molybdenum disulfide film. Photodetector for graphene/molybdenum disulfide heterojunction.
在S120中,基于黑磷/石墨烯/二硫化钼异质结的光电探测器包括基底、第一电极、第二电极、黑磷薄膜层、石墨烯层和二硫化钼层,第一电极和第二电极间隔设置在基底的一侧表面,第一电极和第二电极之间形成沟道结构,黑磷薄膜层、石墨烯层和二硫化钼层依 次层叠设置在沟道结构内,第一电极和第二电极分别与黑磷薄膜层和二硫化钼层接触连接。其中,黑磷薄膜、石墨烯薄膜和二硫化钼薄膜依次对应于黑磷薄膜层、石墨烯层和二硫化钼层,黑磷薄膜层、石墨烯层和二硫化钼层的选择如上所述,在此不再赘述。在本发明中,可以但不限于为黑磷薄膜、石墨烯薄膜和二硫化钼薄膜通过剥离法制备得到。In S120, the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction includes a substrate, a first electrode, a second electrode, a black phosphorus film layer, a graphene layer and a molybdenum disulfide layer, the first electrode and The second electrode is arranged at intervals on one side surface of the substrate, and a channel structure is formed between the first electrode and the second electrode. The black phosphorous film layer, the graphene layer and the molybdenum disulfide layer are sequentially stacked and arranged in the channel structure. The electrode and the second electrode are respectively in contact with the black phosphorous film layer and the molybdenum disulfide layer. Among them, black phosphorous film, graphene film and molybdenum disulfide film correspond to black phosphorous film layer, graphene layer and molybdenum disulfide layer in sequence. The selection of black phosphorous film layer, graphene layer and molybdenum disulfide layer is as described above, I won't repeat them here. In the present invention, black phosphorus film, graphene film, and molybdenum disulfide film can be prepared by, but not limited to, a stripping method.
在本发明一实施方式中,制备方法还包括:将自修复材料涂覆在第一电极和/或第二电极的表面,形成自修复层;在自修复层上沉积电极材料,形成自修复电极。其中,该制备过程可以在形成第一电极和第二电极后进行,也可以在形成黑磷薄膜层、石墨烯层和二硫化钼层中至少一层后进行,对此不作限定。In one embodiment of the present invention, the preparation method further includes: coating a self-healing material on the surface of the first electrode and/or the second electrode to form a self-healing layer; depositing electrode material on the self-healing layer to form a self-healing electrode . Wherein, the preparation process may be performed after forming the first electrode and the second electrode, or after forming at least one of the black phosphorous film layer, the graphene layer, and the molybdenum disulfide layer, which is not limited.
在本发明一具体实施例中,基于黑磷/石墨烯/二硫化钼异质结的光电探测器的制备方法,包括:提供基底,在基底一侧表面沉积电极材料,形成间隔设置的第一电极和第二电极,其中,第一电极和第二电极之间形成沟道结构;将黑磷薄膜、石墨烯薄膜和二硫化钼薄膜依次层叠设置在沟道结构内,第一电极和第二电极分别与黑磷薄膜和二硫化薄膜接触连接;将自修复材料涂覆在第一电极和/或第二电极的表面,形成自修复层,在自修复层上沉积电极材料,形成自修复电极,得到基于黑磷/石墨烯/二硫化钼异质结的光电探测器。具体的,可以但不限于为自修复材料涂覆在第一电极和/或第二电极的表面边缘,形成自修复层。In a specific embodiment of the present invention, a method for preparing a photodetector based on a black phosphorous/graphene/molybdenum disulfide heterojunction includes: providing a substrate, depositing electrode materials on one side of the substrate, and forming first spaced first The electrode and the second electrode, wherein a channel structure is formed between the first electrode and the second electrode; the black phosphorous film, the graphene film and the molybdenum disulfide film are sequentially stacked in the channel structure, the first electrode and the second electrode The electrodes are in contact with the black phosphorous film and the disulfide film respectively; the self-healing material is coated on the surface of the first electrode and/or the second electrode to form a self-healing layer, and electrode material is deposited on the self-healing layer to form a self-healing electrode , A photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction is obtained. Specifically, the self-healing material may be coated on the surface edge of the first electrode and/or the second electrode to form a self-healing layer.
本发明提供的基于黑磷/石墨烯/二硫化钼异质结的光电探测器,通过在光电探测器中设置黑磷/石墨烯/二硫化钼异质结,解决现有光电探测器暗电流过大的问题,实现低暗电流、快速响应、高灵敏、宽波段的光电探测,并且该光电探测器可以同时高效探测可见光和红外光,具有低噪声和低功耗,有利于其广泛应用。本发明提供的基于黑磷/石墨烯/二硫化钼异质结的光电探测器的制备方法简单易操作,可以制得低暗电流、快速响应的光电探测器。The photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the present invention solves the dark current of the existing photodetector by setting the black phosphorus/graphene/molybdenum disulfide heterojunction in the photodetector Excessive problems, low dark current, fast response, high sensitivity, wide-band photoelectric detection, and the photodetector can efficiently detect visible light and infrared light at the same time, with low noise and low power consumption, which is conducive to its wide application. The preparation method of the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the invention is simple and easy to operate, and can produce a photodetector with low dark current and fast response.
实施例1Example 1
将柔性PET基底粘贴在带有电极图案的精密硅基掩膜版上,然后一起放入电子束蒸发仪中分别蒸镀铬层和金层,其中铬层的厚度为5nm,金层的厚度为40nm,最后将PET基底取出,即得到具有间隔设置的第一电极和第二电极的柔性PET基底,第一电极和第二电极的厚度为45nm,第一电极和第二电极之间形成沟道结构。Paste the flexible PET substrate on a precision silicon-based mask with electrode patterns, and then put them into an electron beam evaporator to evaporate the chromium layer and the gold layer respectively. The thickness of the chromium layer is 5nm and the thickness of the gold layer is 40nm. Finally, the PET substrate is taken out to obtain a flexible PET substrate with a first electrode and a second electrode arranged at intervals. The thickness of the first electrode and the second electrode is 45nm, and a channel structure is formed between the first electrode and the second electrode. .
利用scotch胶带剥离黑磷,并将其粘贴到PDMS薄膜上,随后在二维材料定点转移平台将黑磷薄膜转移到柔性PET基底上,黑磷薄膜的厚度为17nm。类似的,利用scotch胶带剥离石墨烯薄膜和二硫化钼薄膜,并依次转移至柔性PET基底上,石墨烯薄膜的厚度为7nm,二硫化钼薄膜的厚度为12nm,黑磷薄膜、石墨烯薄膜和二硫化钼薄膜依次层叠设置在沟道结构内,得到黑磷/石墨烯/二硫化钼异质结,部分黑磷薄膜设置在第一电极表面,部分二硫化钼薄膜设置在第二电极表面。Use scotch tape to peel off the black phosphorous and paste it on the PDMS film, and then transfer the black phosphorous film to the flexible PET substrate on a two-dimensional material fixed-point transfer platform. The thickness of the black phosphorous film is 17nm. Similarly, use scotch tape to peel off graphene film and molybdenum disulfide film, and transfer them to a flexible PET substrate in turn. The thickness of the graphene film is 7nm, the thickness of the molybdenum disulfide film is 12nm, the black phosphorous film, graphene film and Molybdenum disulfide thin films are sequentially stacked and arranged in the channel structure to obtain a black phosphorus/graphene/molybdenum disulfide heterojunction. Part of the black phosphorus film is arranged on the surface of the first electrode, and part of the molybdenum disulfide film is arranged on the surface of the second electrode.
将自修复材料均匀滴在第一电极和第二电极外周,成膜后利用金属镂空掩模板,用电子束蒸发仪蒸镀铬层和金层,形成电极基体,得到自修复电极,即制得基于黑磷/石墨烯/二硫化钼异质结的光电探测器。The self-healing material is uniformly dropped on the outer periphery of the first electrode and the second electrode, and after the film is formed, the metal hollow mask is used, and the chromium layer and the gold layer are evaporated with an electron beam evaporator to form the electrode matrix, and the self-healing electrode is obtained, which is based on Black phosphorus/graphene/molybdenum disulfide heterojunction photodetector.
实施例2Example 2
将聚二甲基硅氧烷基底粘贴在带有电极图案的精密硅基掩膜版上,然后一起放入电子束蒸发仪中分别蒸镀铬层和金层,最后将聚二甲基硅氧烷基底取出,即得到具有间隔设置的第一电极和第二电极的聚二甲基硅氧烷基底,第一电极和第二电极的厚度为60nm,第一电极和第二电极之间形成沟道结构。Paste the polydimethylsiloxane substrate on a precision silicon-based mask with electrode patterns, and then put it into an electron beam evaporator to vaporize the chromium layer and the gold layer, and finally the polydimethylsiloxane The substrate is taken out to obtain a polydimethylsiloxane substrate with a first electrode and a second electrode spaced apart. The thickness of the first electrode and the second electrode is 60nm, and a channel is formed between the first electrode and the second electrode structure.
将黑磷薄膜、石墨烯薄膜和二硫化钼薄膜转移到聚二甲基硅氧烷基底上,黑磷薄膜的厚度为25nm,石墨烯薄膜的厚度为5nm,二硫化钼薄膜的厚度为18nm,黑磷薄膜、石墨烯薄膜和二硫化钼薄膜依次层叠设置在沟道结构内,得到黑磷/石墨烯/二硫化钼异质结,第一电极和第二电极分别与黑磷薄膜和二硫化钼薄膜接触连接,即制得基于黑磷/石墨烯/二硫化钼异质结的光电探测器。Transfer the black phosphorus film, graphene film and molybdenum disulfide film to a polydimethylsiloxane substrate. The thickness of the black phosphorus film is 25nm, the thickness of the graphene film is 5nm, and the thickness of the molybdenum disulfide film is 18nm. Black phosphorus film, graphene film and molybdenum disulfide film are stacked in the channel structure in order to obtain black phosphorus/graphene/molybdenum disulfide heterojunction. The first electrode and the second electrode are respectively connected with black phosphorus film and disulfide film. Molybdenum thin film contact connection, that is, a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction is prepared.
实施例3Example 3
将柔性PET基底粘贴在带有电极图案的精密硅基掩膜版上,通过溅射形成钛层和铜层组成的第一电极和第二电极,最后将PET基底取出,即得到具有间隔设置的第一电极和第二电极的柔性PET基底,第一电极和第二电极的厚度为70nm,第一电极和第二电极之间形成沟道结构。The flexible PET substrate is pasted on a precision silicon-based mask with electrode patterns, the first electrode and the second electrode composed of a titanium layer and a copper layer are formed by sputtering, and finally the PET substrate is taken out to obtain a spaced-apart The flexible PET substrate of the first electrode and the second electrode, the thickness of the first electrode and the second electrode is 70 nm, and a channel structure is formed between the first electrode and the second electrode.
将黑磷薄膜、石墨烯薄膜和二硫化钼薄膜转移到柔性PET基底上,黑磷薄膜的厚度为30nm,石墨烯薄膜的厚度为10nm,二硫化钼薄膜的厚度为15nm,黑磷薄膜、石墨烯薄膜和二硫化钼薄膜依次层叠设置在沟道结构内,黑磷薄膜在基底上的正投影与二硫化钼薄膜在基底上的正投影的重合区域,与石墨烯薄膜在基底上的正投影完全重叠,得到黑磷/石墨烯/二硫化钼异质结,第一电极和第二电极分别与黑磷薄膜和二硫化钼薄膜接触连接,即制得基于黑磷/石墨烯/二硫化钼异质结的光电探测器。Transfer black phosphorous film, graphene film and molybdenum disulfide film to a flexible PET substrate. The thickness of black phosphorous film is 30nm, the thickness of graphene film is 10nm, the thickness of molybdenum disulfide film is 15nm, black phosphorous film, graphite The olefin film and the molybdenum disulfide film are stacked in the channel structure in sequence. The overlap area of the orthographic projection of the black phosphorous film on the substrate and the orthographic projection of the molybdenum disulfide film on the substrate, and the orthographic projection of the graphene film on the substrate Completely overlap to obtain a black phosphorus/graphene/molybdenum disulfide heterojunction. The first electrode and the second electrode are in contact with the black phosphorus film and the molybdenum disulfide film, respectively, which is based on black phosphorus/graphene/molybdenum disulfide. Heterojunction photodetector.
对比例Comparison
将柔性PET基底粘贴在带有电极图案的精密硅基掩膜版上,然后一起放入电子束蒸发仪中分别蒸镀铬层和金层,其中铬层的厚度为5nm,金层的厚度为40nm,最后将PET基底取出,即得到具有间隔设置的第一电极和第二电极的柔性PET基底,第一电极和第二电极的厚度为45nm,第一电极和第二电极之间形成沟道结构。Paste the flexible PET substrate on a precision silicon-based mask with electrode patterns, and then put them into an electron beam evaporator to evaporate the chromium layer and the gold layer respectively. The thickness of the chromium layer is 5nm and the thickness of the gold layer is 40nm. Finally, the PET substrate is taken out to obtain a flexible PET substrate with a first electrode and a second electrode arranged at intervals. The thickness of the first electrode and the second electrode is 45nm, and a channel structure is formed between the first electrode and the second electrode. .
利用scotch胶带剥离黑磷,并将其粘贴到PDMS薄膜上,随后在二维材料定点转移平台将黑磷薄膜转移到柔性PET基底上,黑磷薄膜的厚度为17nm。利用scotch胶带剥离二硫化钼薄膜,并转移至柔性PET基底上,二硫化钼薄膜的厚度为12nm,黑磷薄膜和二硫化钼薄膜依次层叠设置在沟道结构内,得到黑磷/二硫化钼异质结,部分黑磷薄膜设置在第一电极表面,部分二硫化钼薄膜设置在第二电极表面。Use scotch tape to peel off the black phosphorous and paste it on the PDMS film, and then transfer the black phosphorous film to the flexible PET substrate on a two-dimensional material fixed-point transfer platform. The thickness of the black phosphorous film is 17nm. Use scotch tape to peel off the molybdenum disulfide film and transfer it to a flexible PET substrate. The thickness of the molybdenum disulfide film is 12nm. The black phosphorus film and the molybdenum disulfide film are stacked in the channel structure in order to obtain black phosphorus/molybdenum disulfide In the heterojunction, part of the black phosphorous film is arranged on the surface of the first electrode, and part of the molybdenum disulfide film is arranged on the surface of the second electrode.
将自修复材料均匀滴在第一电极和第二电极外周,成膜后利用金属镂空掩模板,用电子束蒸发仪分别蒸镀铬层和金层,形成电极基体,得到自修复电极,即制得基于黑磷/二硫化钼的光电探测器。The self-healing material is evenly dropped on the outer periphery of the first electrode and the second electrode. After the film is formed, the metal hollow mask is used, and the chromium layer and the gold layer are vapor-deposited with an electron beam evaporator to form the electrode matrix to obtain the self-healing electrode. Photodetector based on black phosphorus/molybdenum disulfide.
效果实施例Example of effects
将实施例1和对比例制得的光电探测器放置在半导体特性分析仪配套的探针平台上,选取探针台配套的两个探针分别接触到探测器的第一电极和第二电极对应的自修复电极。 打开半导体特性分析仪测试软件,漏极探针选择电压扫描模式,扫描范围为-1V~1V。运行测试软件,得到探测器在无光条件下I-V图。引入655nm的激光,调节其功率强度至150mW/cm 2,垂直照射在该光电探测器上,设置第一电极电压为1V,第二电极电压为0V,运行软件,得到时间依赖的光开、关的I-t曲线图。结果如图4和图5所示,其中,图4为实施例1提供的基于黑磷/石墨烯/二硫化钼异质结的光电探测器的测试结果图,图4中(a)为无光条件下的I-V曲线图,可以看出光电探测器整流效果明显,电压反向偏置时暗电流非常小;图4中(b)为在无光和有光交替出现时的I-t曲线图,可以看出有光时的电流与无光时的电流比值大,表示光电探测器的灵敏度高。图5为本发明对比例提供的基于黑磷/二硫化钼的光电探测器的测试结果图,图5中(a)为无光条件下的I-V曲线图,可以看出其整流效果不明显,电压反向偏置时暗电流很大;图5中(b)为在无光和有光交替出现时的I-t曲线图,可以看出有光时的电流与无光时的电流比值很小,表示光电探测器的灵敏度低。因此,本发明提供的基于黑磷/石墨烯/二硫化钼异质结的光电探测器可以明显降低光电探测器的暗电流,提高光电探测器的灵敏度,使其可以快速响应。 The photodetectors prepared in Example 1 and the comparative example were placed on the probe platform of the semiconductor characteristic analyzer, and the two probes of the probe station were selected to contact the first electrode and the second electrode of the detector respectively. Self-healing electrode. Open the semiconductor characteristic analyzer test software, select the voltage scan mode for the drain probe, and the scan range is -1V to 1V. Run the test software to get the IV diagram of the detector in the absence of light. Introduce a 655nm laser, adjust its power intensity to 150mW/cm 2 , irradiate it vertically on the photodetector, set the voltage of the first electrode to 1V and the voltage of the second electrode to 0V, run the software to get the time-dependent light on and off Graph of It. The results are shown in Figure 4 and Figure 5, where Figure 4 is the test result diagram of the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided in Example 1, and Figure 4 (a) is without The IV curve diagram under light conditions shows that the photodetector has a significant rectification effect, and the dark current is very small when the voltage is reverse biased; Figure 4 (b) is the It curve diagram when there is no light and there is light alternately. It can be seen that the ratio of the current when there is light to the current when there is no light is large, indicating that the sensitivity of the photodetector is high. Fig. 5 is a graph of the test results of a photodetector based on black phosphorous/molybdenum disulfide provided by the comparative example of the present invention. (a) in Fig. 5 is an IV curve graph under non-light conditions. It can be seen that the rectification effect is not obvious. The dark current is very large when the voltage is reverse biased; Figure 5 (b) is the It curve when there is no light and there is light alternately. It can be seen that the ratio of the current when there is light to the current when there is no light is very small. Indicates that the sensitivity of the photodetector is low. Therefore, the photodetector based on the black phosphorus/graphene/molybdenum disulfide heterojunction provided by the present invention can significantly reduce the dark current of the photodetector, improve the sensitivity of the photodetector, and enable it to respond quickly.
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementation modes of the present invention, and the description is relatively specific and detailed, but it should not be understood as a limitation to the patent scope of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can be made, and these all fall within the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims.

Claims (10)

  1. 一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器,其特征在于,包括基底、第一电极、第二电极、黑磷薄膜层、石墨烯层和二硫化钼层,所述第一电极和所述第二电极间隔设置在所述基底的一侧表面,所述第一电极和所述第二电极之间形成沟道结构,所述黑磷薄膜层、所述石墨烯层和所述二硫化钼层依次层叠设置在所述沟道结构内,所述第一电极和所述第二电极分别与所述黑磷薄膜层和所述二硫化钼层接触连接。A photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, which is characterized in that it comprises a substrate, a first electrode, a second electrode, a black phosphorus film layer, a graphene layer and a molybdenum disulfide layer. The first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, the black phosphorous film layer, the graphene The layer and the molybdenum disulfide layer are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively in contact with the black phosphorous film layer and the molybdenum disulfide layer.
  2. 如权利要求1所述的光电探测器,其特征在于,还包括自修复电极,所述自修复电极设置在所述第一电极和/或所述第二电极的表面。8. The photodetector according to claim 1, further comprising a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode.
  3. 如权利要求2所述的光电探测器,其特征在于,所述自修复电极包括电极基体和自修复层,所述自修复层设置在所述电极基体靠近所述第一电极和/或所述第二电极的一侧表面。The photodetector according to claim 2, wherein the self-healing electrode comprises an electrode base and a self-healing layer, and the self-healing layer is arranged on the electrode base close to the first electrode and/or the One side surface of the second electrode.
  4. 如权利要求1所述的光电探测器,其特征在于,所述黑磷薄膜层在所述基底上的正投影与所述二硫化钼层在所述基底上的正投影的重合区域,与所述石墨烯层在所述基底上的正投影面积比为1:(0.2-5)。The photodetector according to claim 1, wherein the overlapping area of the orthographic projection of the black phosphorous film layer on the substrate and the orthographic projection of the molybdenum disulfide layer on the substrate is identical to that of the orthographic projection of the molybdenum disulfide layer on the substrate. The ratio of the orthographic projection area of the graphene layer on the substrate is 1: (0.2-5).
  5. 如权利要求1所述的光电探测器,其特征在于,所述黑磷薄膜层在所述基底上的正投影与所述二硫化钼层在所述基底上的正投影的重合区域,与所述石墨烯层在所述基底上的正投影完全重叠。The photodetector according to claim 1, wherein the overlapping area of the orthographic projection of the black phosphorous film layer on the substrate and the orthographic projection of the molybdenum disulfide layer on the substrate is identical to that of the orthographic projection of the molybdenum disulfide layer on the substrate. The orthographic projections of the graphene layer on the substrate completely overlap.
  6. 如权利要求1所述的光电探测器,其特征在于,所述黑磷薄膜层的厚度为0.5nm-50nm,所述石墨烯层的厚度为0.3nm-15nm,所述二硫化钼层的厚度为0.6nm-50nm。The photodetector according to claim 1, wherein the thickness of the black phosphorous film layer is 0.5nm-50nm, the thickness of the graphene layer is 0.3nm-15nm, and the thickness of the molybdenum disulfide layer It is 0.6nm-50nm.
  7. 如权利要求1所述的光电探测器,其特征在于,部分所述黑磷薄膜层设置在所述第一电极表面,部分所述二硫化钼层设置在所述第二电极表面。The photodetector according to claim 1, wherein part of the black phosphorous film layer is disposed on the surface of the first electrode, and part of the molybdenum disulfide layer is disposed on the surface of the second electrode.
  8. 如权利要求1所述的光电探测器,其特征在于,所述基底的材质包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚二甲基硅氧烷中的至少一种,所述第一电极和所述第二电极的材质包括金、银、铂、铜、铬和钛中的至少一种。The photodetector according to claim 1, wherein the material of the substrate comprises at least one of polyethylene terephthalate, polyethylene naphthalate and polydimethylsiloxane In one type, the material of the first electrode and the second electrode includes at least one of gold, silver, platinum, copper, chromium and titanium.
  9. 一种基于黑磷/石墨烯/二硫化钼异质结的光电探测器的制备方法,其特征在于,包括:A preparation method of a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction, characterized in that it comprises:
    提供基底,在所述基底一侧表面沉积电极材料,形成间隔设置的第一电极和第二电极,其中,所述第一电极和所述第二电极之间形成沟道结构;Providing a substrate, depositing electrode material on one side surface of the substrate to form a first electrode and a second electrode arranged at intervals, wherein a channel structure is formed between the first electrode and the second electrode;
    将黑磷薄膜、石墨烯薄膜和二硫化钼薄膜依次层叠设置在所述沟道结构内,所述第一电极和所述第二电极分别与所述黑磷薄膜和所述二硫化钼薄膜接触连接,得到基于黑磷/石墨烯/二硫化钼异质结的光电探测器。A black phosphorus film, a graphene film, and a molybdenum disulfide film are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are in contact with the black phosphorus film and the molybdenum disulfide film, respectively Connected to obtain a photodetector based on black phosphorus/graphene/molybdenum disulfide heterojunction.
  10. 如权利要求9所述的制备方法,其特征在于,还包括:9. The preparation method of claim 9, further comprising:
    将自修复材料涂覆在所述第一电极和/或所述第二电极的表面,形成自修复层;Coating a self-healing material on the surface of the first electrode and/or the second electrode to form a self-healing layer;
    在所述自修复层上沉积电极材料,形成自修复电极。An electrode material is deposited on the self-healing layer to form a self-healing electrode.
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Publication number Priority date Publication date Assignee Title
CN111048619A (en) * 2019-10-25 2020-04-21 深圳大学 Photoelectric detector based on black phosphorus/graphene/molybdenum disulfide heterojunction and preparation method thereof
CN111554780B (en) * 2020-05-14 2022-09-20 南方科技大学 Mid-infrared light-emitting diode with heterojunction and preparation method thereof
KR102370741B1 (en) * 2020-07-29 2022-03-07 광주과학기술원 Ternary Logic Device using Heterojunction-based Multi-layer Channel
CN112834465B (en) * 2021-02-23 2023-08-08 深圳罗兹曼国际转化医学研究院 SPR biological sensing chip, chip modification method, SARS-CoV-2 detection kit and detection method
CN113035965B (en) * 2021-03-04 2023-07-14 电子科技大学 Preparation method of flexible photoelectric detector based on selenide/sulfide heterojunction
CN114047231B (en) * 2021-11-04 2024-02-27 湖州师范学院 Diode type heterojunction gas sensor chip and preparation method thereof
CN114551758A (en) * 2022-02-14 2022-05-27 深圳市华星光电半导体显示技术有限公司 OLED display panel and display device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219403A (en) * 2013-04-19 2013-07-24 苏州大学 Optical detector based on two-dimensional stratiform atomic crystal materials
US20140008616A1 (en) * 2011-03-22 2014-01-09 The University Of Manchester Transistor device and materials for making
CN105590985A (en) * 2015-12-31 2016-05-18 南京大学 Optoelectronic device based on two-dimensional layered material p-i-n heterojunction
CN106024861A (en) * 2016-05-31 2016-10-12 天津理工大学 Two-dimensional black phosphorus/transitional metal chalcogenide heterojunction device and preparation method therefor
CN109742165A (en) * 2019-01-02 2019-05-10 南京大学 A kind of avalanche photodetector and detection system based on two-dimensional layer material
CN111048619A (en) * 2019-10-25 2020-04-21 深圳大学 Photoelectric detector based on black phosphorus/graphene/molybdenum disulfide heterojunction and preparation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2749694T3 (en) * 2014-07-15 2020-03-23 Fundacio Inst De Ciencies Fotòniques Optoelectronic apparatus and manufacturing method thereof
CN105489693B (en) * 2015-12-31 2017-09-29 南京大学 Based on the sub- device of two-dimensional layer thin-film material p g n heterojunction photovoltaics
CN105742394B (en) * 2016-02-29 2017-09-29 北京邮电大学 A kind of ultraviolet detector based on black phosphorus/graphene heterojunction structure and preparation method thereof
CN105702775B (en) * 2016-03-18 2017-03-29 电子科技大学 It is a kind of to be based on black phosphorus/adjustable photo-detector of molybdenum bisuphide hetero-junctions energy bandgaps
WO2017166878A1 (en) * 2016-04-01 2017-10-05 中国科学院苏州纳米技术与纳米仿生研究所 Black phosphorus crystal with high photoelectric response rate, two-dimensional black phosphorus pn junction, and preparation method therefor and application thereof
CN107527968A (en) * 2017-07-16 2017-12-29 北京工业大学 A kind of lateral heterojunction photoelectric detector structure of graphene molybdenum disulfide
CN110118621A (en) * 2018-02-06 2019-08-13 中国科学院深圳先进技术研究院 A kind of selfreparing pliable pressure sensor and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140008616A1 (en) * 2011-03-22 2014-01-09 The University Of Manchester Transistor device and materials for making
CN103219403A (en) * 2013-04-19 2013-07-24 苏州大学 Optical detector based on two-dimensional stratiform atomic crystal materials
CN105590985A (en) * 2015-12-31 2016-05-18 南京大学 Optoelectronic device based on two-dimensional layered material p-i-n heterojunction
CN106024861A (en) * 2016-05-31 2016-10-12 天津理工大学 Two-dimensional black phosphorus/transitional metal chalcogenide heterojunction device and preparation method therefor
CN109742165A (en) * 2019-01-02 2019-05-10 南京大学 A kind of avalanche photodetector and detection system based on two-dimensional layer material
CN111048619A (en) * 2019-10-25 2020-04-21 深圳大学 Photoelectric detector based on black phosphorus/graphene/molybdenum disulfide heterojunction and preparation method thereof

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