CN111554780B - Mid-infrared light-emitting diode with heterojunction and preparation method thereof - Google Patents
Mid-infrared light-emitting diode with heterojunction and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 109
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052582 BN Inorganic materials 0.000 claims description 21
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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Abstract
The invention provides a mid-infrared light emitting diode with a heterojunction and a preparation method thereof, wherein the mid-infrared light emitting diode comprises: a substrate; the light-emitting structure comprises a van der Waals heterojunction formed by vertically stacking a black phosphorus film and a molybdenum disulfide film which are arranged on a substrate; the first electrode and the second electrode are respectively connected with the black phosphorus film and the molybdenum disulfide film; wherein the energy band relationship of the black phosphorus film and the molybdenum disulfide film presents the energy band arrangement in a staggered mode. According to the invention, the black phosphorus film and the molybdenum disulfide film are vertically stacked to form the Van der Waals heterojunction, the energy band relationship of the two materials presents a staggered II-type energy band arrangement, electrons and holes in the heterojunction can be effectively separated, so that the electroluminescence of the black phosphorus film in a middle infrared region can be effectively modulated under the action of electric excitation, and the novel middle infrared light-emitting diode which is simple, efficient and high in silicon-based compatibility is obtained.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a mid-infrared light-emitting diode with a heterojunction and a preparation method thereof.
Background
The infrared spectrum region on the electromagnetic spectrum is divided into a near infrared region, a middle infrared region and a far infrared region, and the middle infrared spectrum region has wide application in the fields of environment monitoring, nondestructive diagnosis, industrial monitoring and national defense. The mid-infrared light source is one of the core components for realizing mid-infrared technology, and the thermal radiation and gas discharge infrared light source can emit continuous mid-infrared spectral lines. Therefore, the mid-infrared Light Emitting Diode (LED) can emit mid-infrared light signals with specific wavelengths and has the characteristics of narrow spectral line, low power consumption, portability and the like.
Common light emitting diodes are made of gallium phosphide (GaP) and gallium arsenide phosphide (GaAsP), while infrared light emitting diodes are made of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs), among which GaAs is the most used. Mid-infrared light emitting diodes based on III-V/II-VI materials have been proposed in the prior art for infrared light emission, e.g. epitaxially grown InAs 0.87 Sb 0.13 The InAs quantum well structure realizes mid-infrared electroluminescence at room temperature at 4 mu m. However, the above-described platform constructed using conventional III-V/II-VI materials for mid-infrared light emitting diodes has the following problems: first, the incompatibility of III-V/II-VI materials with silicon-based technologies makes such devices lacking a silicon linerPotential for high integration on the bottom; furthermore, the construction of a hetero-integrated mid-ir emitter on a silicon photonics chip is largely limited by the strain at the interface and the high cost.
The above drawbacks are expected to be overcome by those skilled in the art.
Disclosure of Invention
Technical problem to be solved
In order to solve the above problems in the prior art, the present invention provides a mid-infrared light emitting diode having a heterojunction and a method for manufacturing the same, which solve the problem that a mid-infrared light emitting diode having a higher compatibility on a silicon substrate cannot be provided in the prior art.
(II) technical scheme
In order to achieve the purpose, the invention adopts the main technical scheme that:
in one aspect, the present invention provides a mid-infrared light emitting diode having a heterojunction, comprising:
a substrate;
the light-emitting structure comprises a van der Waals heterojunction formed by vertically stacking a black phosphorus film and a molybdenum disulfide film which are arranged on a substrate; and
the first electrode and the second electrode are respectively connected with the black phosphorus film and the molybdenum disulfide film;
wherein the energy band relationship of the black phosphorus film and the molybdenum disulfide film presents staggered mode energy band arrangement.
In an exemplary embodiment of the invention, the substrate comprises silicon and silicon dioxide, wherein a light emitting structure is arranged on the upper surface of the silicon dioxide, the silicon is used as a grid electrode, and the electron concentration in the molybdenum disulfide film is regulated and controlled through doping.
In an exemplary embodiment of the present invention, the light emitting structure is:
the molybdenum disulfide film is arranged on the substrate, and the black phosphorus film is arranged on the molybdenum disulfide film.
In an exemplary embodiment of the invention, the size of an overlapping region formed by vertically stacking the black phosphorus film and the molybdenum disulfide film in the light emitting structure determines the size of a light emitting area of the mid-infrared light emitting diode.
In an exemplary embodiment of the present invention, the thickness of the black phosphor film determines the emission wavelength of the mid-infrared light emitting diode.
In an exemplary embodiment of the invention, the thickness of the black phosphorus film is 5-100nm, and the thickness of the molybdenum disulfide film is 2-20 nm.
In an exemplary embodiment of the present invention, further comprising:
and the boron nitride covers the black phosphorus film, and the area of the boron nitride is larger than that of the van der Waals heterojunction formed by the black phosphorus film.
In an exemplary embodiment of the present invention, further comprising:
and the conducting layer is arranged on the boron nitride and used as a top gate, and forms a double-gate structure with the gate electrode in the substrate.
In an exemplary embodiment of the present invention, the light emitting structure is:
the black phosphorus film is arranged on the substrate, and the molybdenum disulfide film is arranged on the black phosphorus film.
The invention also provides a preparation method of the mid-infrared light-emitting diode with the heterojunction, which comprises the following steps:
forming a molybdenum disulfide film on a substrate;
transferring the black phosphorus film onto a glass slide in an inert gas environment, covering the black phosphorus film on a molybdenum disulfide film, wherein the energy band relationship of the black phosphorus film and the molybdenum disulfide film presents a staggered energy band arrangement;
baking at 200 deg.C;
and respectively forming a first electrode and a second electrode on the black phosphorus film and the molybdenum disulfide film by evaporation.
(III) advantageous effects
The invention has the beneficial effects that: according to the intermediate infrared light-emitting diode with the heterojunction and the preparation method thereof provided by the embodiment of the invention, the black phosphorus film and the molybdenum disulfide film are vertically stacked to form the Van der Waals heterojunction, the energy band relation of the two materials presents a staggered II-type energy band arrangement, electrons and holes in the heterojunction can be effectively separated, so that the electroluminescence of the black phosphorus film in an intermediate infrared region can be effectively adjusted under the action of electric excitation, and the novel intermediate infrared light-emitting diode which is simple, efficient and high in silicon-based compatibility is obtained.
Drawings
Fig. 1 is a schematic diagram of a mid-infrared light emitting diode with a heterojunction according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a black phosphorus-molybdenum disulfide based mid-infrared van der waals heterojunction light emitting diode according to an embodiment of the present invention;
FIG. 3 is a top view of a black phosphorus-molybdenum disulfide based mid-infrared van der Waals heterojunction light emitting diode provided in one embodiment of the present invention;
FIG. 4 is a cross-sectional view of a black phosphorus-molybdenum disulfide based mid-infrared van der Waals heterojunction light emitting diode provided in one embodiment of the present invention;
FIG. 5 is a flowchart of a method for fabricating a mid-IR LED with a heterojunction according to a first embodiment of the present invention;
fig. 6 is a schematic structural diagram of a black phosphorus-molybdenum disulfide based mid-infrared van der waals heterojunction light-emitting diode according to a second embodiment of the present invention;
fig. 7 is a schematic structural diagram of a black phosphorus-molybdenum disulfide based mid-infrared van der waals heterojunction light-emitting diode according to a third embodiment of the present invention;
fig. 8 is a schematic structural diagram of a black phosphorus-molybdenum disulfide based mid-infrared van der waals heterojunction light-emitting diode according to a fourth embodiment of the present invention;
fig. 9 is a flowchart of a method for manufacturing a mid-infrared light emitting diode with a heterojunction according to a fourth embodiment of the present invention.
Description of reference numerals:
1: a black phosphorus film;
2: a molybdenum disulfide film;
3: silicon dioxide;
4: silicon;
5: an electrode;
7: boron nitride;
8: top gate;
100: a mid-infrared diode;
110: a substrate;
120: a light emitting structure;
121: a black phosphorus film;
122: a molybdenum disulfide film;
130: a first electrode;
140: a second electrode.
Detailed Description
For the purpose of better explaining the present invention and to facilitate understanding, the present invention will be described in detail by way of specific embodiments with reference to the accompanying drawings.
All technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Fig. 1 is a schematic diagram of a mid-infrared light emitting diode with a heterojunction according to an embodiment of the present invention, where the diode is based on a two-dimensional material black phosphorus film and molybdenum disulfide film vertically stacked to form a van der waals heterojunction, and as shown in fig. 1, the mid-infrared diode 100 specifically includes: a substrate 110 and a light emitting structure 120; the light emitting structure 120 includes a black phosphorus film 121 and a molybdenum disulfide film 122 disposed on a substrate, which are vertically stacked to form a van der waals heterojunction; further comprises a first electrode 130 and a second electrode 140 respectively connected with the black phosphorus film 121 and the molybdenum disulfide film 122; wherein the energy band relationship of the black phosphorus film 121 and the molybdenum disulfide film 122 presents a staggered energy band arrangement.
The structure shown in fig. 1 is described in detail below with reference to the first to fourth embodiments:
example one
Fig. 2 is a schematic structural diagram of a black phosphorus-molybdenum disulfide based mid-infrared van der waals heterojunction light-emitting diode according to an embodiment of the present invention, fig. 3 is a top view of a black phosphorus-molybdenum disulfide based mid-infrared van der waals heterojunction light-emitting diode according to an embodiment of the present invention, and fig. 4 is a cross-sectional diagram of a black phosphorus-molybdenum disulfide based mid-infrared van der waals heterojunction light-emitting diode according to an embodiment of the present invention. The light emitting diode includes: the solar cell comprises a P-type black phosphorus film 1 with a forbidden band width in a middle infrared region, an N-type molybdenum disulfide film 2, a silicon substrate with 285nm thick silicon dioxide on the surface, and a cadmium/gold electrode film. The black phosphorus film 1 and the molybdenum disulfide film 2 are vertically stacked to form a van der waals heterojunction, as shown in fig. 3, the energy band relationship of the two materials presents a staggered type II energy band arrangement, so that electrons and holes in the heterojunction can be effectively separated, and the electroluminescence of the black phosphorus film 1 in a middle infrared region can be effectively modulated under the action of electric excitation.
As shown in fig. 4, the diode structure sequentially includes, from bottom to top, a substrate (including silicon 4 and silicon dioxide 3), a molybdenum disulfide thin film 2, a black phosphorus thin film 1, and two electrodes 5 respectively disposed on the molybdenum disulfide thin film and the black phosphorus thin film. The substrate is used for supporting the black phosphorus film 1 and the molybdenum disulfide film 2, the upper surface of the insulating substrate silicon dioxide 3 is provided with a light-emitting structure, the silicon 4 is used as a grid (namely a conductive back gate made of doped silicon), and the electron concentration in the molybdenum disulfide film is regulated and controlled through doping. Silicon dioxide/silicon is selected as the substrate, and convenience is provided for preparing a back gate control device.
As shown in fig. 2, the light emitting structure is: the molybdenum disulfide film 2 is arranged on a substrate, specifically on silicon dioxide 3, and the black phosphorus film 1 is arranged on the molybdenum disulfide film 2. Wherein the thickness of the P-type black phosphorus film 1 is 5-100nm, and the thickness of the N-type molybdenum disulfide film 2 is 2-20 nm.
In an exemplary embodiment of the invention, the black phosphorus film 1 is above the molybdenum disulfide film 2, and the size of an overlapping region formed by vertically stacking the black phosphorus film and the molybdenum disulfide film in the light emitting structure determines the size of the light emitting area of the mid-infrared light emitting diode. Meanwhile, the two-dimensional materials need to have enough area for connecting the metal electrode 5, namely the metal electrode 5 is arranged in the region except the van der Waals heterojunction formed by the black phosphorus film 1 and the molybdenum disulfide film 2, so that the source and drain metal electrodes are constructed.
In an exemplary embodiment of the present invention, the thickness of the black phosphor film 1 determines the light emission wavelength of the mid-infrared light emitting diode. Since the black phosphor film 1 has a wide bandgap adjustable characteristic, as the thickness of the black phosphor film increases, the light emitting wavelength thereof continuously shifts to red, for example, when the thickness of the black phosphor film is 5nm, the light emitting wavelength of the infrared diode is 2.8 mm; when the thickness is increased to 50nm, the emission wavelength of the infrared diode is red-shifted to 4 mm. Therefore, the light-emitting wavelength of the infrared light-emitting diode in the black phosphorus film can be further regulated and controlled by changing the thickness of the black phosphorus film.
As shown in fig. 2, the diode further comprises two electrodes connected to the black phosphorus film 1 and the molybdenum disulfide film 2, respectively, for providing bias voltage to the black phosphorus-molybdenum disulfide heterojunction. On the basis of comparing the work functions of different metals and two-dimensional film materials, a chromium/gold electrode (with the thickness of 5/60nm) is selected as an evaporation electrode material, so that the contact potential difference between the electrode and the two-dimensional material can be reduced.
Fig. 5 is a flowchart of a method for manufacturing a mid-infrared light emitting diode having a heterojunction according to a first embodiment of the present invention, as shown in fig. 5, including the following steps:
step S51: a molybdenum disulfide film is formed on a substrate by obtaining a molybdenum disulfide film 2 on a silicon dioxide 3/silicon substrate 4 having a surface with a thickness of 285nm by mechanical peeling under an atmospheric environment.
Step S52: the black phosphorus film was transferred to a glass slide in an inert gas environment and covered on a molybdenum disulfide film. As shown in fig. 3, the energy band relationship of the black phosphorus film 1 and the molybdenum disulfide film 2 presents an energy band arrangement in a staggered manner, in which the black phosphorus film 1 is mechanically peeled off from the bulk crystal onto a glass slide of PDMS (polydimethylsiloxane) material in an inert gas glove box, and the black phosphorus film 1 is covered on the molybdenum disulfide film 2 under an optical microscope in the glove box by PDMS-assisted dry transfer.
Considering that the black phosphorus film is easy to react with water and oxygen in the air environment, and the degradation of the black phosphorus film can be caused by illumination, the preparation of the black phosphorus film is carried out in the environment filled with inert gas. Under the assistance of an optical microscope, the black phosphorus film is transferred to the molybdenum disulfide film through a mechanical arm, and a vertical van der Waals heterojunction structure is realized.
Step S53: the sample obtained in step S52 was further placed on a 200 ℃ heating stage and baked for 10 minutes in order to make the interface contact of the heterojunction better in this step.
Step S54: and respectively forming a first electrode and a second electrode on the black phosphorus film and the molybdenum disulfide film by evaporation. As shown in fig. 3, metal electrodes 5 are formed on the black phosphorus film 1 and the molybdenum disulfide film 2, respectively, by an evaporation process.
The structure of the embodiment is that the black phosphorus film is on the top, the molybdenum disulfide film is on the bottom, metal electrodes are respectively formed on the two films as source and drain electrodes, silicon dioxide/silicon is used as a substrate, and doped silicon is used as a conductive back gate, so that the structure of the intermediate infrared diode with the black phosphorus-molybdenum disulfide heterojunction is formed. The effect is based on the advantages of simple and efficient black phosphorus-molybdenum disulfide heterostructure and good silicon-based technology compatibility, and the II-type heterojunction with staggered energy bands is remarkably characterized in that electrons and holes can be effectively separated, and under the action of electric excitation, the black phosphorus film can finally realize efficient luminescence in the middle infrared. In addition, based on the device structure, the working range of the black phosphorus film can be further prolonged by changing the thickness of the black phosphorus film. Such two-dimensional heterojunctions, which rely on van der waals forces to tie together, do not require consideration of lattice matching relative to conventional semiconductor heterojunctions. Based on this, a large number of different functional heterojunction combinations will be constructed.
Example two
Fig. 6 is a schematic structural diagram of a black phosphorus-molybdenum disulfide-based mid-infrared van der waals heterojunction light-emitting diode according to a second embodiment of the present invention, where the mid-infrared diode further includes: and the boron nitride covers the black phosphorus film, and the area of the boron nitride is larger than that of the black phosphorus film forming the Van der Waals heterojunction.
In one exemplary embodiment of the present invention, the thickness of the boron nitride is less than or equal to 100 nm.
As shown in fig. 6, the novel mid-infrared van der waals heterojunction light emitting diode in the second embodiment is different from that in the first embodiment in that an insulating layer boron nitride 7 is added on the black phosphorus-molybdenum disulfide heterojunction for packaging, and other structures and obtained effects are basically the same as those in the first embodiment and are not repeated herein.
For the structure shown in fig. 6, the processing process flow is as follows: on the basis of the flow shown in fig. 5, the following steps are added:
obtaining a boron nitride film 7 on the PDMS/glass slide in a mechanical stripping mode;
It should be noted that, since the area of the boron nitride film must be larger than that of the black phosphorus film to ensure that the black phosphorus film is completely encapsulated, as shown in fig. 6, the region of the black phosphorus film covered with the boron nitride 7 mainly refers to the region where the van der waals heterojunction is formed, and does not include the region where the metal electrode 5 is formed
The structure of this embodiment is for encapsulating the black phosphorus film through boron nitride, can also avoid the black phosphorus film to contact with the air and take place the degradation after processing on the basis of the effect of embodiment one, guarantees light emitting device's stability.
EXAMPLE III
Fig. 7 is a schematic structural diagram of a black phosphorus-molybdenum disulfide-based mid-infrared van der waals heterojunction light-emitting diode according to a third embodiment of the present invention, where the mid-infrared diode further includes: and the conducting layer is arranged on the boron nitride to be used as a top gate 8 and forms a double-gate structure with the gate electrode in the substrate.
In an exemplary embodiment of the invention, the area of the top gate 8 is such that it covers at least the heterojunction region and is a mid-infrared transparent material, such as a graphene material. The thickness of the top gate 8 is 0.3-2 nm.
As shown in fig. 7, the novel mid-infrared van der waals heterojunction light emitting diode in the third embodiment is different from that in the second embodiment in that the structure difference is that boron nitride 7 is used as an insulating layer, and a layer of conductive material is evaporated to be used as a top gate 8 to realize dual gate voltage control, and other structures and obtained effects are basically the same as those in the second embodiment.
For the structure shown in fig. 7, the processing process flow is as follows: on the basis of the two procedures of the embodiment, the following steps are added:
and a layer of conductive material is evaporated on the boron nitride 7 positioned on the uppermost layer to be used as a top gate 8, so that double-gate voltage control is realized.
The structure of the embodiment is that a double-gate structure is formed by the top gate added on the insulating layer and the back gate under the substrate, so that a better light-emitting effect can be achieved on the basis of the effect of the first embodiment. The advantages of fabricating the dual gate structure are mainly embodied in two aspects: firstly, the black phosphorus is easy to degrade in the atmospheric environment, and the boron nitride laid on the black phosphorus can be used as a dielectric layer and a good passivation layer, so that the device can be well suitable for the air environment. And secondly, the concentration of holes and electrons can be simultaneously regulated by the heterojunction under the regulation of the double gates, so that better luminous performance is obtained.
Example four
Fig. 8 is a schematic structural diagram of a black phosphorus-molybdenum disulfide based mid-infrared van der waals heterojunction light emitting diode provided in the fourth embodiment of the present invention, where the mid-infrared diode also includes a substrate and a light emitting structure. However, the difference from the first embodiment is that the light emitting structure in the present embodiment is: the black phosphorus film 1 is disposed on the substrate, and the molybdenum disulfide film 2 is disposed on the black phosphorus film 1, i.e., the stacking order of the black phosphorus film 1 and the molybdenum disulfide film 2 is different from that of the first embodiment.
As shown in fig. 8, the diode structure sequentially includes, from bottom to top, a substrate (including silicon 4 and silicon dioxide 3), a black phosphorus film 1, a molybdenum disulfide film 2, and two electrodes 5 respectively disposed on the molybdenum disulfide film and the black phosphorus film.
Fig. 9 is a flowchart of a method for manufacturing a mid-infrared light emitting diode having a heterojunction according to a fourth embodiment of the present invention, as shown in fig. 9, including the following steps:
step S91: a black phosphorus thin film is formed on a substrate in an inert gas atmosphere by operating in an inert gas glove box to obtain a black phosphorus thin film 1 on a silicon dioxide 3/silicon substrate 4 having a surface with a thickness of 285nm by mechanical peeling.
Step S92: and transferring the molybdenum disulfide film onto the glass slide in an inert gas environment, and covering the black phosphorus film with the molybdenum disulfide film. The method comprises the steps of stripping a molybdenum disulfide film 2 onto a PDMS/glass slide through mechanical stripping in an inert gas glove box, and covering the molybdenum disulfide film 2 on a black phosphorus film 1 under an optical microscope in the glove box by using PDMS assisted dry transfer. The energy band relationship of the black phosphorus film 1 and the molybdenum disulfide film 2 presents the energy band arrangement in a staggered mode.
Step S93: the sample obtained in step S82 was further placed on a 200 ℃ heating stage and baked for 10 minutes in order to make the interface contact of the heterojunction better in this step.
Step S94: and respectively forming a first electrode and a second electrode on the black phosphorus film and the molybdenum disulfide film by evaporation. As shown in fig. 8, electrodes of chromium/gold (5/60nm) were vapor-deposited on the black phosphorus film 1 and the molybdenum disulfide film 2, respectively, by an evaporation process.
The other structures and the obtained effects of this embodiment are substantially the same as those of the first embodiment, except that the black phosphorus film is covered with the molybdenum disulfide film. The black phosphorus and the water and oxygen in the air are effectively isolated through the molybdenum disulfide, so that the purpose of preventing the black phosphorus from being degraded can be achieved, and the stability of the intermediate infrared diode is ensured.
In summary, the mid-infrared light emitting diode with the heterojunction and the preparation method thereof provided by the embodiment of the invention have the following effects:
(1) based on the fact that the black phosphorus-molybdenum disulfide heterojunction is simple in structure, efficient and good in silicon-based technology compatibility, the two-dimensional heterojunction is tied together by means of Van der Waals force, lattice matching is not needed to be considered, other heterojunctions with different functionalities can be made, and the application range is expanded.
(2) The heterojunction with the staggered energy bands can effectively separate electrons from holes, and finally realizes the high-efficiency luminescence of the black phosphorus film in the middle infrared under the action of electric excitation.
(3) The working range of the black phosphorus film is prolonged by changing the thickness of the black phosphorus film.
(4) Chromium and gold are selected as materials of the evaporation electrode, so that the contact potential difference between the electrode and the two-dimensional material can be reduced.
(5) The black phosphorus film is packaged by the boron nitride, so that the black phosphorus film is prevented from being degraded due to contact with air after being processed, and the stability of the light-emitting device is ensured.
(6) The top gate added on the insulating layer and the back gate under the substrate form a double-gate structure, and the concentration of holes and electrons can be simultaneously adjusted under the control of the double gate by the heterojunction, so that better luminous performance is obtained, and a better luminous effect can be achieved.
(7) Through setting up the black phosphorus film in the heterojunction structure and being close to substrate one side, the black phosphorus film of protection bottom that can be fine prevents the degradation of black phosphorus, guarantees mid-infrared diode's stability.
In the description of the present invention, it is to be understood that the terms "first", "second", and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to imply that the number of technical features indicated are in fact significant. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; either internal to the two elements or in an interactive relationship of the two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless expressly stated or limited otherwise, a first feature is "on" or "under" a second feature, and the first and second features may be in direct contact, or the first and second features may be in indirect contact via an intermediate. Also, a first feature "on," "above," and "over" a second feature may be directly on or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature "under," "beneath," and "under" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lower level than the second feature.
In the description herein, the description of the terms "one embodiment," "some embodiments," "an embodiment," "an example," "a specific example" or "some examples" or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
Although embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are illustrative and not restrictive, and that those skilled in the art may make changes, modifications, substitutions and alterations to the above embodiments without departing from the scope of the present invention.
Claims (7)
1. A mid-infrared light emitting diode having a heterojunction, comprising: a substrate;
the light-emitting structure comprises a van der Waals heterojunction formed by vertically stacking a black phosphorus film and a molybdenum disulfide film which are arranged on a substrate;
and
the first electrode and the second electrode are respectively connected with the black phosphorus film and the molybdenum disulfide film;
wherein the energy band relationship of the black phosphorus film and the molybdenum disulfide film presents the energy band arrangement in a staggered mode;
the substrate comprises silicon and silicon dioxide, wherein a light-emitting structure is arranged on the upper surface of the silicon dioxide, the silicon is used as a grid, and the electron concentration in the molybdenum disulfide film is regulated and controlled through doping;
the light-emitting structure is as follows:
the molybdenum disulfide film is arranged on the substrate, and the black phosphorus film is arranged on the molybdenum disulfide film;
further comprising: and the boron nitride covers the black phosphorus film, and the area of the boron nitride is larger than that of the black phosphorus film forming the Van der Waals heterojunction.
2. The mid-infrared light emitting diode with a heterojunction as claimed in claim 1, wherein the size of the overlapping region formed by vertically stacking the black phosphorus film and the molybdenum disulfide film in the light emitting structure determines the size of the light emitting area of the mid-infrared light emitting diode.
3. The mid-infrared light emitting diode with a heterojunction as claimed in claim 1, wherein the thickness of said black phosphor film determines the light emission wavelength of said mid-infrared light emitting diode.
4. The mid-infrared light emitting diode with a heterojunction as claimed in claim 1, wherein the thickness of said black phosphorus film is 5 to 100nm, and the thickness of said molybdenum disulfide film is 2 to 20 nm.
5. The mid-infrared light emitting diode with a heterojunction as claimed in claim 1, further comprising:
and the conducting layer is arranged on the boron nitride and used as a top gate, and forms a double-gate structure with the gate electrode in the substrate.
6. The mid-infrared light emitting diode with a heterojunction as claimed in claim 1, wherein said light emitting structure is:
the black phosphorus film is arranged on the substrate, and the molybdenum disulfide film is arranged on the black phosphorus film.
7. A preparation method of a mid-infrared light emitting diode with a heterojunction is characterized by comprising the following steps:
forming a black phosphorus film on a substrate; obtaining a black phosphorus film on a substrate with silicon dioxide/silicon on the surface through mechanical stripping;
transferring the molybdenum disulfide film onto a glass slide in an inert gas environment, covering the black phosphorus film with the molybdenum disulfide film, and arranging the energy bands of the black phosphorus film and the molybdenum disulfide film in a staggered mode;
baking at 200 deg.C for 10 min;
and respectively forming a first electrode and a second electrode on the black phosphorus film and the molybdenum disulfide film by evaporation.
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