CN108447924A - The optical detector of Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus and its preparation - Google Patents
The optical detector of Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus and its preparation Download PDFInfo
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- CN108447924A CN108447924A CN201810226345.7A CN201810226345A CN108447924A CN 108447924 A CN108447924 A CN 108447924A CN 201810226345 A CN201810226345 A CN 201810226345A CN 108447924 A CN108447924 A CN 108447924A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 79
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 230000003287 optical effect Effects 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052738 indium Inorganic materials 0.000 claims abstract description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 239000002356 single layer Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000000197 pyrolysis Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 13
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical group [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910021389 graphene Inorganic materials 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000037230 mobility Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- -1 HgCdTe Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052961 molybdenite Inorganic materials 0.000 description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 240000003936 Plumbago auriculata Species 0.000 description 1
- 229910003090 WSe2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The present invention relates to based on two-dimentional indium selenide and the Van der Waals hetero-junctions of black phosphorus optical detector and its preparation, the optical detector includes silicon substrate and the silica oxide layer that is set to above silicon substrate, p-type black phosphorus layer is provided in silica oxide layer, N-shaped selenizing indium layer is provided with above p-type black phosphorus layer, p-type black phosphorus layer and N-shaped selenizing indium layer constitute Van der Waals p n hetero-junctions；It is provided with drain electrode in N-shaped selenizing indium layer, is provided with source electrode on the p-type black phosphorus layer, it is opposite with silica oxide layer on silicon substrate to be provided with gate electrode on one side.N-shaped indium selenide forms p n hetero-junctions with p-type black phosphorus in the present invention, the quick separating of electrons and holes carrier may be implemented in interface built in field, reduce Carrier recombination probability and then reduce device dark current, advantageously reduce noise of detector and improves response speed.
Description
Technical field
The present invention relates to a kind of optical detectors of the Van der Waals hetero-junctions based on two-dimentional N-shaped indium selenide and p-type black phosphorus
And preparation method thereof, low noise, high-responsivity, fast-response, the optical detection of wide spectrum may be implemented, belong to optical detector technology neck
Domain.
Background technology
Single detector can realize that efficient optical detection has important application value in wide spectral range, very much
Field is widely used, including optic communication, infrared imaging, remote sensing, environmental monitoring, spectrum analysis, astrosurveillance etc..It is previous to visit
Survey different-waveband detector can only based on the material with different energy gaps, for example, GaN be commonly used for ultraviolet detector,
Si is detected for visible optical detection, InGaAs near infrared light, and mid-infrared light detects partly leading for the narrow band gap that needs to rely on
Body compound, such as HgCdTe, PbS and PbSe.In order to realize wide spectrum optical detection to a certain extent, need that detection will be suitable for
Multiple detectors of different-waveband integrate, and ensure that these detectors work asynchronously, and lead to device architecture and technique
It is considerably complicated.
The Van der Waals p-n heterojunction of two-dimensional semiconductor superposition composition is that one kind that developed recently gets up is novel heterogeneous
Knot, it can realize efficiently separating for carrier by built in field, to obtain high inside/outside quantum efficiency and opto-electronic conversion
Efficiency etc. opens up a new way to prepare high-responsivity, low noise, fast-response optical detector.
Two-dimensional semiconductor Van der Waals p-n heterojunction mainly faces following problem at present：1) common two-dimensional layer
Shape transition metal chalcogenide (abbreviation TMDCs) material is mainly N-shaped, and electron mobility low (electron effective mass is big),
Optically absorbing luminous efficiency low (single layer is direct band gap, and multilayer is indirect band gap) etc. causes its hetero-junctions electricity to transport performance and photoelectricity
Performance etc. does not reach ideal effect, and raising is advanced optimized to limit it；Although 2) part of p-type MoS2And WSe2Deng
TMDCs can by CVD growth adulterate or electric field regulation and control etc. realizations, but foreign atom introducing greatly reduce quality of materials into
And reduce hole mobility, and electric field regulation and control then increase device complexity etc.；3) GaSe is common p-type half except TMDCs
Conductor, but its band gap is more than 2eV, to limit its application in visible light and near infrared band.So selection has height
It is to prepare high-performance, wide spectrum model moral that the N-shaped and p-type two-dimensional material of carrier mobility and appropriate bandgap combination, which form p-n junction,
The core of Wa Ersi heterojunction optical detectors.
Indium selenide (InSe) has extensive use as the Typical Representative of III-VI compounds of group.Block InSe is direct band
The n-type semiconductor of gap, band gap are about 1.26eV.Each six side InSe of single layer is by tetra- layers monatomic group of close Se-In-In-Se
At layer is with layer along C axis stacked arrangements, and the space group of γ-InSe is R3m, and lattice constant isWith
It is similar with other layered semiconductor materials, it is connected between layers by weaker Van der Waals force, therefore can be shelled by machinery
Few layer even the InSe nano thin-films of single layer are obtained from method.Due to quantum local effect, with the band gap of the reduction InSe of the number of plies
Gradually increase, single layer band gap size is about 1.80eV, and electron mobility reaches 1000cm at room temperature2V-1S-1More than.Above-mentioned table
Bright stratiform InSe is a kind of ideal N-shaped two-dimensional semiconductor and optical detector material.Including the optical detector of indium selenide also have it is all
More patent document reports, such as：Chinese patent document CN106653891A discloses a kind of photodetection based on indium selenide/silicon
Device and preparation method, the detector from bottom to top successively with hearth electrode, n-type silicon matrix and be provided with the silica of silicon window every
The upper surface of absciss layer, silica separation layer covers top electrode；The upper surface of top electrode covers indium selenide film, indium selenide film
Respectively with top electrode madial wall, silica separation layer upper surface, silica separation layer madial wall and silicon window upper surface
Contact；Indium selenide film and n-type silicon substrate contact form indium selenide/silicon heterogenous.Its γ-In prepared2Se3Material it is thin
Film have narrow direct band gap and visible-range high absorption coefficient, this kind of detector show on-off ratio up to 1570 bloom
Electroresponse, compared with short response time and long-time stability, the photodetector shows the wide spectrum from ultraviolet to near-infrared in addition
Response characteristic, these excellent performances all bring research and market-oriented foreground to more efficient indium selenide/silicon photodetector.
But the detector is limited to In2Se3It is logical that 1.31 μm and 1.55 μm of light can not be covered with the band gap of Si its spectral response characteristic
Wave band is believed, so limiting its scope of application.
Black phosphorus (Black Phosphorus-BP) is a kind of crystal of the rhombic system with metallic luster, is had similar
Graphite and transient metal sulfide etc. it is laminar structured, in layer with Covalent bonding together and interlayer is combined with Van der Waals force, often
Layer is due to sp3Orbital hybridization is fold-like structures, can be divided into two vertical direction of Armchair and Zigzag.Compared to MoS2Deng
Transient metal sulfide, BP are p-type direct band-gap semicondictor, and its bandgap type does not change with thickness change, from block to
Single layer band gap is gradually increased to about 2.0eV by 0.30eV, and electron spectrum dispersion relation is similar with graphene in low energy region, to
With very high carrier mobility.SiO at present2BP-FET device hole mobilities on/Si reach 1000cm2V-1S-1With
On.The These characteristics of black phosphorus make it show advantage outstanding in terms of quick, wide spectrum optical detection.Although BP is chronically exposed to
It can gradually be aoxidized in air, form foaming material on surface, to reduce device performance, service life, reliability etc., but at present may be used
To carry out effective protection to it by covering a layer graphene, BN or oxide etc. on its surface.So BP is counted as a kind of
Few high quality p-type two-dimensional layer semi-conducting material has significant application value.Bao Han phosphorus Van der Waals hetero-junctions
Optical detector also there are many patent documents to report, such as：Chinese patent document CN106328720A discloses a kind of graphene-
Black phosphorus heterojunction photoelectric detector and preparation method, if including be cascading from bottom to top silicon substrate, silicon dioxide layer,
The black phosphorus layer of dry parallel arrangement and the graphene layer being covered on each black phosphorus layer；In black phosphorus and graphene layer in each black phosphorus layer
Graphene constitute hetero-junctions；Black phosphorus layer is completely covered graphene layer；It is provided with electrode above graphene layer edge, electrode prolongs
Reach black phosphorus layer and graphene layer overlapping region top.It is realized has high photoelectric conversion efficiency in optical communication wave band,
Preparation method is simple, at low cost, and reproducible purpose.But the detector belongs to photoconductive detectors, so necessary
There is extraneous extra voltage driving that could realize work, while such detector is often dark electric compared to p-n junction type photovoltaic detector
It flows relatively large.
Invention content
The present invention provides one kind for the disadvantages mentioned above of conventional photodetectors and existing two-dimentional Van der Waals hetero-junctions
Based on the optical detector and preparation method thereof of indium selenide/black phosphorus Van der Waals p-n heterojunction, the detector have low noise,
The advantages of high-responsivity, fast-response, wide spectrum, at the same have the characteristics that it is compatible with CMOS technology, small, be easily integrated.
The technical solution adopted by the present invention is：
A kind of optical detector of the Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus, including silicon substrate and setting
Silica oxide layer above silicon substrate is provided with p-type black phosphorus layer, the p-type in the silica oxide layer
N-shaped selenizing indium layer is provided with above black phosphorus layer, it is heterogeneous that the p-type black phosphorus layer and N-shaped selenizing indium layer constitute Van der Waals p-n
Knot；
It is provided with drain electrode in the N-shaped selenizing indium layer, source electrode, the silicon are provided on the p-type black phosphorus layer
It is opposite with silica oxide layer on substrate to be provided with gate electrode on one side.
, according to the invention it is preferred to, the p-type black phosphorus layer is the multilayer of single layer or two layers or more；
It is further preferred that the thickness of black phosphorus layer is 5-30nm.
, according to the invention it is preferred to, the N-shaped selenizing indium layer is the multilayer of single layer or two layers or more；
It is further preferred due to being indirect band gap when InSe thickness is less than 7nm (about 10 layers), so the thickness of N-shaped InSe
Degree is 7nm-30nm.
, according to the invention it is preferred to, the material of the drain electrode and source electrode is in gold, silver, indium, copper, titanium
It is one or more, respectively Ohmic contact is formed with InSe and black phosphorus.Drain electrode and source electrode are as extraction electrode, with outside
Circuit is connected.
Two-dimension single layer plumbago alkene material may be used in further preferred source, drain electrode, to improve carrier collection efficiency,
Extraction electrode is contacted in graphene metal prepared above, is connected with external circuit.
, according to the invention it is preferred to, the gate electrode is using the one or more and Si in gold, silver, indium, copper, titanium
Substrate forms good Schottky contacts.
According to the present invention, the preparation of the optical detector of the above-mentioned Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus
Method, including steps are as follows：
(1) prepare and clean surface and be stamped 180-220nm thickness SiO2Highly dope p-type Si substrates；
(2) black phosphorus layer is prepared using mechanical stripping method, black phosphorus film is covered in SiO by orienting transfer method2It
On；
Alternatively, directly in SiO2Black phosphorus film is grown above/Si substrates；
(3) it is by mechanically pulling off method and prepares InSe layers in Si substrates, it is then aobvious by light microscope and atomic force
Micro mirror selects the InSe layers of required thickness, and InSe layers of orientation are transferred to black phosphorus film in conjunction with dry or wet transfer method
On；
It is taken alternatively, InSe is attached at pyrolysis release, InSe is covered in using orientation transfer method and has been prepared
On black phosphorus film；Pressing lightly on makes InSe be in close contact with black phosphorus, heats and slowly tears pyrolysis release band off, then cleaning is dried
It is dry；
(4) standard photolithography process, spin coating photoresist is used to position indium selenide/black phosphorus hetero-junctions under litho machine, use light
It carves mask plate to be exposed, then develop；
(5) source electrode, drain electrode metal material is deposited, then uses organic solvent stripping photoresist, forms source electrode electricity
Pole, drain electrode；
(6) it is thinned, polished from Si substrate backs, evaporation metal electrode forms gate electrode, that is, completes optical detector
Preparation.
The optical detector of the Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus of the present invention has very at room temperature
High carrier mobility, band gap can covering visible light to infrared band, the two combination can form II type hetero-junctions of energy band,
Electrons and holes distinguish local in InSe and BP, as shown in Figure 2.The hetero-junctions by change material thickness adjust band gap can be with
Realize that wide spectrum covering, the presence of built in field can be such that photo-generated carrier efficiently separates without extra voltage driving, simultaneously
Detector response time and noise etc. can be reduced.In addition InSe can be with effective protection BP on BP.It is formed so the two combines
Van der Waals p-n heterojunction can be used for preparing low noise, high-responsivity, fast-response, wide spectrum optical detector.
Compared with the prior art, the advantages of the present invention are as follows：
1. N-shaped indium selenide forms p-n heterojunction with p-type black phosphorus in the present invention, electronics may be implemented in interface built in field
With the quick separating of holoe carrier, reduces Carrier recombination probability and then reduce device dark current, advantageously reduce detector
Noise and raising response speed.
2. optical detector size of the present invention is small, investigative range can covering visible light to infrared light (0.4 micron~2 microns).
3. indium selenide and black phosphorus are direct band gap material in the present invention, there is small noise current, improve device
Detectivity.
4. electronics room temperature mobilities reach 1000cm in inventive n-type indium selenide2/ VS or more, far superior to MoS2Deng other
Two-dimentional n-type material.
Hole room temperature mobilities reach 1000cm in p-type black phosphorus2/ VS or more, carrier relaxation time is in femtosecond magnitude, institute
It is very fast with the response to light.
5. the optical detector of the present invention is using silicon as substrate, compatible with CMOS technology, it is easily integrated.
6. detector of the present invention is p-n junction photovoltaic detector, the presence of built in field is not necessarily to additional extra voltage
Realize optical detection.
7. the detecting light spectrum range of detector of the present invention can be regulated and controled by the number of plies of indium selenide and black phosphorus.
8. the photoelectric response characteristic of detector of the present invention can be regulated and controled by grid voltage.
9. the photoelectric response characteristic of detector of the present invention can be regulated and controled by source-drain voltage.
10. although black phosphorus is unstable in air, indium selenide is placed on black phosphorus in the present invention and is effectively protected
Black phosphorus is conducive to the stability and reliability that improve device.
Description of the drawings
Fig. 1 is that the present invention is based on the agent structures of two-dimentional indium selenide and the optical detector of the Van der Waals hetero-junctions of black phosphorus
Schematic diagram.
Fig. 2 is the band structure schematic diagram of the Van der Waals hetero-junctions of the two-dimentional indium selenide of the present invention and black phosphorus.
Wherein：1, silicon substrate, 2, silica oxide layer, 3, N-shaped selenizing indium layer, 4, p-type black phosphorus layer, 5, drain electrode,
6, source electrode, 7, gate electrode.
Specific implementation mode
Below by specific embodiment and in conjunction with attached drawing, the invention will be further described, but not limited to this.
Embodiment 1
As shown in Figure 1, a kind of optical detector of the Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus, including silicon
It is black to be provided with p-type in the silica oxide layer 2 for substrate 1 and the silica oxide layer 2 being set to above silicon substrate 1
Phosphorous layer 4, the p-type black phosphorus layer 4 are provided with N-shaped selenizing indium layer 3,3 structure of the p-type black phosphorus layer 4 and N-shaped selenizing indium layer above
At Van der Waals p-n heterojunction；
It is provided with drain electrode in the N-shaped selenizing indium layer 3, source electrode 6 is provided on the p-type black phosphorus layer 4, it is described
It is opposite with silica oxide layer 2 on silicon substrate 1 to be provided with gate electrode 7 on one side.
4 thickness of p-type black phosphorus layer described in the present embodiment is 10nm, about 18 layers；
3 thickness of N-shaped selenizing indium layer be 8nm, about 11 layers；
The material of the drain electrode 5 and source electrode 6 is gold-plated Ti electrode, and golden thickness is about 20nm, titanium thickness
About 20nm.Drain electrode 5 and source electrode 6 are used as extraction electrode, are connected with external circuit.
7 material of gate electrode is gold, thickness 30nm.
The preparation method of the optical detector of the above-mentioned Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus, specifically
Steps are as follows：
(1) prepare and clean surface and be stamped about 200nm thickness SiO2Highly dope p-type Si substrates；
(2) it uses mechanical stripping method to prepare the black phosphorus of 10nm thickness, is covered in black phosphorus film by orienting transfer techniques
SiO2On；
(3) it is by mechanically pulling off technology and prepares different-thickness InSe in Si substrates, then pass through light microscope and original
InSe orientations are transferred on black phosphorus film using wet method transfer techniques, are then utilized by the InSe of sub- force microscope selection 8nm thickness
Acetone and other organic solvent and deionized water are cleaned, nitrogen drying；
(4) standard photolithography process, spin coating photoresist is used to position indium selenide/black phosphorus hetero-junctions under litho machine, use light
It carves mask plate to be exposed, then develop；
(5) electron beam evaporation equipment evaporation source, drain metal material are utilized, the titanium of 20nm thickness is deposited first, so
Then the gold that 20nm thickness is deposited on titanium afterwards uses organic solvent to enhance the stability and conductive capability of titanium
Stripping photoresist, cleaning form source, drain electrode；
(6) it is thinned to about 100 microns of thickness, polishing from Si substrate backs by Si substrates, the thick golden metal electrodes of 30nm is deposited,
Form grid.
The above is only a preferred embodiment of the present invention, it is not intended to restrict the invention, it is noted that black in invention
Phosphorus and selenizing phosphide material and its hetero-junctions can be obtained by different preparation methods, and source-drain electrode and grid can be by not
Same metal is realized, while source-drain electrode also can realize that carrier effectively be collected by using two-dimensional graphene material, not take off
Under the premise of from the technology of the present invention principle, several improvements and modifications can also be made, these improvements and modifications also should be regarded as this hair
Bright protection domain.
Claims (8)
1. a kind of optical detector of the Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus, which is characterized in that the light is visited
It includes silicon substrate and the silica oxide layer that is set to above silicon substrate to survey device, is provided in the silica oxide layer
P-type black phosphorus layer is provided with N-shaped selenizing indium layer, the p-type black phosphorus layer and N-shaped selenizing indium layer structure above the p-type black phosphorus layer
At Van der Waals p-n heterojunction；
It is provided with drain electrode in the N-shaped selenizing indium layer, source electrode, the silicon substrate are provided on the p-type black phosphorus layer
It is upper opposite with silica oxide layer to be provided with gate electrode on one side.
2. the optical detector of the Van der Waals hetero-junctions according to claim 1 based on two-dimentional indium selenide and black phosphorus,
It is characterized in that, the p-type black phosphorus layer is the multilayer of single layer or two layers or more.
3. the optical detector of the Van der Waals hetero-junctions according to claim 1 based on two-dimentional indium selenide and black phosphorus,
It is characterized in that, the thickness of black phosphorus layer is 5-30nm.
4. the optical detector of the Van der Waals hetero-junctions according to claim 1 based on two-dimentional indium selenide and black phosphorus,
It is characterized in that, the N-shaped selenizing indium layer is the multilayer of single layer or two layers or more.
5. the optical detector of the Van der Waals hetero-junctions according to claim 1 based on two-dimentional indium selenide and black phosphorus,
It is characterized in that, the thickness of the N-shaped selenizing indium layer is 7nm-30nm.
6. the optical detector of the Van der Waals hetero-junctions according to claim 1 based on two-dimentional indium selenide and black phosphorus,
Be characterized in that, the material of the drain electrode and source electrode be it is one or more in gold, silver, indium, copper, titanium, respectively with n
Type selenizing indium layer and p-type black phosphorus layer form Ohmic contact.
7. the optical detector of the Van der Waals hetero-junctions according to claim 1 based on two-dimentional indium selenide and black phosphorus,
It is characterized in that, the gate electrode forms good Xiao Te using the one or more and Si substrates in gold, silver, indium, copper, titanium
Base contacts.
8. the optical detector of Van der Waals hetero-junctions of the claim 1-7 any one of them based on two-dimentional indium selenide and black phosphorus
Preparation method, including steps are as follows：
(1) prepare and clean surface and be stamped 180-220nm thickness SiO2Highly dope p-type Si substrates；
(2) black phosphorus layer is prepared using mechanical stripping method, black phosphorus film is covered in SiO by orienting transfer method2On；
Alternatively, directly in SiO2Black phosphorus film is grown above/Si substrates；
(3) it is by mechanically pulling off method and prepares InSe layers in Si substrates, then pass through light microscope and atomic force microscope
InSe layers of orientation, are transferred on black phosphorus film by the InSe layers for selecting required thickness in conjunction with dry or wet transfer method；
It is taken alternatively, InSe is attached at pyrolysis release, InSe is covered in the black phosphorus prepared using orientation transfer method
On film；Pressing lightly on makes InSe be in close contact with black phosphorus, heats and slowly tears pyrolysis release band off, then cleaning, drying；
(4) standard photolithography process, spin coating photoresist is used to position indium selenide/black phosphorus hetero-junctions under litho machine, covered using photoetching
Film version is exposed, and is then developed；
(5) source electrode, drain electrode metal material is deposited, then uses organic solvent stripping photoresist, forms source electrode, leakage
Pole electrode；
(6) it is thinned, polished from Si substrate backs, evaporation metal electrode forms gate electrode, that is, completes the system of optical detector
It is standby.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170168327A1 (en) * | 2015-12-10 | 2017-06-15 | Samsung Electronics Co., Ltd. | Optoelectronic device and smart window comprising the same |
| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
-
2018
- 2018-03-19 CN CN201810226345.7A patent/CN108447924A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170168327A1 (en) * | 2015-12-10 | 2017-06-15 | Samsung Electronics Co., Ltd. | Optoelectronic device and smart window comprising the same |
| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
Non-Patent Citations (5)
| Title |
|---|
| J. E. PADILHA: ""Two-dimensional van derWaals p-n junction of InSe/phosphorene"", 《PHYSICAL REVIEW B》 * |
| MINGQIANG HUANG: ""Multifunctional high-performance van der Waals heterostructures"", 《NATURE NANOTECHNOLOGY》 * |
| YEXIN DENG: ""Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode"", 《ACS NANO》 * |
| YI-MIN DING: ""Electric field modulation of electronic structures in InSe and black phosphorus heterostructure"", 《SOLID STATE COMMUNICATIONS》 * |
| YUAN LIU: ""Van der Waals heterostructures and devices"", 《NATURE REVIEWS》 * |
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