CN114744062A - Three-dimensional groove silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction - Google Patents
Three-dimensional groove silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction Download PDFInfo
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Abstract
The invention discloses a three-dimensional groove silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction, and belongs to the technical field of photoelectric detectors. The electrode detector comprises an isolation silicon body, wherein the isolation silicon body is made of a two-dimensional material InSe/GaAs heterojunction material, the two-dimensional material InSe/GaAs heterojunction is a II-type heterostructure with a direct band gap, and the II-type heterostructure comprises a heterostructure with a Ga end in contact with and a heterostructure with an As end in contact with; the band gap of the heterostructure of the Ga end contact is 0.62-1.32eV, and the band gap of the heterostructure of the As end contact is 1.84-1.95 eV. Compared with a single-layer InSe carrier mobility, the two-dimensional material InSe/GaAs heterojunction is greatly improved, the light absorption range is widened by the heterostructure, and the absorption enhancement of visible light and infrared regions is increased.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a three-dimensional groove silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction.
Background
Visible light and near infrared detectors made of crystalline silicon dominate the current market of photodetectors, but silicon-based semiconductors also have some limitations in their application to photodetectors. Firstly, the manufacturing technology of the silicon-based semiconductor is close to the limit of the moore's law, when the size of the device is reduced to a certain degree, the classical physical theory is not applicable, and the phenomenon that short channel effect and the like affect the device can also occur; secondly, the silicon-based photoelectric detector has small absorption coefficient to light and narrow absorption spectrum, and most of light with infrared wavelength cannot be absorbed, so that the wide application of the silicon-based photoelectric detector is greatly limited; on the other hand, the diffusion of carriers caused by the longer carrier lifetime in the silicon-based material interferes with the detection of optical signals between adjacent pixel points. Therefore, there is an increasing demand for new materials having good flexibility, high light absorption efficiency, wide light response range, and good transparency. The emerging two-dimensional material has a plurality of excellent physical properties, can make up for the defects of the bulk material silicon process, and has good application prospect for future high-performance photoelectric detectors.
The two-dimensional material gets extensive attention of researchers by virtue of the excellent characteristics, and the characteristics are specifically shown as follows: the thickness of the atomic scale enables the two-dimensional nano material to have inherent elasticity and almost transparent characteristics; the quantum confinement effect in the vertical direction enables the two-dimensional nano material to have more excellent photoelectric characteristics compared with a bulk three-dimensional material; and (III) the band gap is adjustable, and the effective regulation of the light absorption characteristic is realized by regulating the band gap through an external field.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a three-dimensional groove silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction. The three-dimensional groove silicon electrode detector can be applied to photoelectric detectors such as visible light detectors and infrared detectors; for a photoelectric detector, the spectral response range and the optical response of the photoelectric detector are greatly enhanced by introducing a two-dimensional material InSe/GaAs heterojunction; and the long service life and the stability under room temperature of the interlayer exciton enable the exciton to be controlled through an external electric field and an optical field, and open a way for the development of a novel exciton device.
The purpose of the invention is realized by the following technical scheme:
a three-dimensional groove silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction comprises an isolation silicon body, wherein the isolation silicon body is made of a two-dimensional material InSe/GaAs heterojunction material, the two-dimensional material InSe/GaAs heterojunction is a direct band gap type II heterostructure, and the type II heterostructure comprises a heterostructure with Ga end contact (SM-n2) and a heterostructure with As end contact (SM-n 1); the band gap of the heterostructure contacted with the Ga end is 0.62-1.32eV, and the band gap of the heterostructure contacted with the As end is 1.84-1.95 eV.
The two-dimensional material InSe/GaAs heterojunction material is prepared by the following preparation method:
(1) a nano-imprinting soft template (stamp) at the top of the glass slide is contacted with a two-dimensional material GaAs crystal on the adhesive tape, when the adhesive tape is separated, a two-dimensional material GaAs thin layer is remained on the nano-imprinting soft template, and the ultrathin two-dimensional material GaAs on the nano-imprinting soft template is searched under a microscope;
(2) preparing an ultrathin two-dimensional material InSe on a substrate;
(3) the spatial positions of the two-dimensional material GaAs and the two-dimensional material InSe are distinguished through a microscope, and the two three-dimensional displacement platforms enable the two-dimensional material GaAs and the two-dimensional material InSe to be completely consistent in the spatial positions so as to be overlapped and contacted;
(4) and slightly applying force to the glass slide where the two-dimensional material GaAs is positioned, adhering the two-dimensional material GaAs and the two-dimensional material InSe together, slowly separating the nano-imprinting soft template from the InSe/GaAs heterojunction, separating the nano-imprinting soft template from the GaAs, and leaving the InSe/GaAs heterojunction on the substrate.
Further, the nanoimprint soft template (stamp) in step (1), preferably PDMSstamp, PPC, and pmmasstamp; the PDMS is polydimethylsiloxane, the PMMA is polymethyl methacrylate, and the PPC is polymethyl ethylene carbonate.
The ultrathin film in the step (1) and the step (2) is of a single-layer atomic thickness.
The preparation in the step (2) is preferably prepared by a Chemical Vapor Deposition (CVD) method.
The chemical vapor deposition method comprises the following steps: putting the substrate into a furnace chamber, circulating one or more gaseous precursors in the furnace chamber, and then depositing the precursors on the surface of the substrate in a reaction manner; the precursor refers to InI and Se powder for preparing InSe.
Further, the substrate in the step (2) is preferably a silicon wafer.
The glass slide where the two-dimensional material GaAs is located in the step (4) refers to a soft nanoimprint template printed with the ultrathin two-dimensional material GaAs and placed on the top of the glass slide.
And (4) slightly applying force, specifically, lightly touching with a fingertip, and adhering the two-dimensional materials together.
The three-dimensional groove silicon electrode detector based on the two-dimensional material InSe/GaAs heterojunction further comprises a peripheral electrode, a central electrode, a nesting part, an electrode contact layer, a silicon dioxide protection layer and a silicon substrate; a hollow peripheral electrode is arranged on the silicon dioxide protective layer, and a silicon substrate and a central electrode are arranged in the peripheral electrode; the silicon substrate comprises a substrate part and a nested part, the cross section of the substrate part is the same as that of the lower silicon dioxide protective layer, the nested part is embedded in a peripheral electrode, isolation silicon bodies are filled between a central electrode and the peripheral electrode and between the nested part and the peripheral electrode, electrode contact layers are arranged on the tops of the peripheral electrode and the central electrode, electrode contact ports are arranged on the electrode contact layers, and the upper silicon dioxide protective layer is arranged on the top of the isolation silicon body.
The height of the electrode detector is 300-500 mu m;
the cross section of the silicon dioxide protective layer is quadrilateral, and the thickness of the silicon dioxide protective layer is 1 mu m;
the peripheral electrode is a hollow straight quadrangular prism structure, the peripheral electrode is n + heavily doped phosphorus silicon (or p + heavily doped borosilicate), the electrode width of the n + heavily doped phosphorus silicon (or p + heavily doped borosilicate) is 10 mu m, and the doping concentration is 1019cm-3；
The substrate part is preferably a p-type silicon substrate and p-type lightly doped borosilicate with the doping concentration of 1012cm-3The purpose of which is to stabilize the mechanical structure of the device, the performance of the detectorWithout any contribution, the height is 30-50 μm;
the nesting part is preferably in a waist-shaped cross section and has the height of 30-50 mu m;
the cross section of the central electrode is preferably in a shape of a waist circle, the central electrode is p + heavily doped borosilicate (or n + heavily doped phosphorus silicon), the electrode width of the p + heavily doped borosilicate (or n + heavily doped phosphorus silicon) is 10 mu m, and the doping concentration is 1019cm-3；
The electrode contact layer is an aluminum layer, and the thickness of the electrode is 1 mu m.
The isolation silicon body is a two-dimensional material InSe/GaAs heterojunction, and the width of the isolation silicon body is 50 mu m.
According to the two-dimensional material InSe/GaAs heterojunction, a heterostructure with different stacking models is constructed for completely optimized single-layer InSe and GaAs, and as a result, six types of stacking models are obtained and are marked as stacking models n (abbreviated as SM-n; n is 1, 2, 3, 4, 5 and 6). Structurally, a single-layer GaAs has two terminals, namely a Ga terminal and an As terminal, and different terminals can cause different properties and properties when contacting InSe to construct a heterostructure. Therefore, we define As terminals and Ga terminals As class 1 and class 2 terminals, respectively, and each SM-n is divided into two types, SM-n1 and SM-n 2. The heterostructure formed by an As-terminated single layer InSe is defined As SM-n1, and the heterostructure formed by a Ga-terminated single layer InSe is defined As SM-n 2. The InSe/GaAs heterojunction is prepared by an artificial fixed-point transfer method and a CVD synthesis method, wherein the common transfer media of the artificial fixed-point transfer method are PDMS, PPC and PMMA; in addition, Chemical Vapor Deposition (CVD) is also a common laboratory synthesis method, and growth of different types of heterojunctions can be achieved by regulating the temperature, composition, speed and direction of the gas flow.
As can be seen from the light absorption coefficient diagrams of SM-n1 and SM-n2, in the visible light region, part of light is absorbed by the single layer GaAs, and the single layer InSe absorbs almost no light; in the ultraviolet region, a single layer of InSe and GaAs can absorb part of light. Compared with an isolated monomer, the heterostructure not only obviously expands the light absorption range, even to an infrared region, but also obviously improves the light absorption intensity. The red-shift phenomenon of the absorption range may be due to the band gap reduction caused by the heterostructure construction. The reason for the increased light absorption intensity may be due to interlayer coupling effects in the heterostructure, and the type II staggered heterostructure makes it easier for electrons to flow from the GaAs layer to the InSe layer. The results show that the use efficiency of the single-layer InSe to sunlight can be obviously improved by constructing the heterostructure by using the GaAs single layer, and the expected effect is achieved.
Compared with the prior art, the invention has the following advantages and effects:
the method utilizes a first principle calculation method to establish an InSe/GaAs heterostructure by stacking single layers of InSe and GaAs; the calculations show that all heterostructures are direct bandgap type II heterostructures, with Ga-end contacted heterostructures (SM-n2) exhibiting more stable characteristics, with smaller bandgaps (0.62-1.32eV), larger bandgaps (1.84-1.95eV) and As-end contacted heterostructures (SM-n1) at appropriate band edge positions, suitable for field effect transistors, photodetectors and photovoltaics. The calculation of the light absorption coefficient shows that: compared with a single-layer InSe carrier mobility, the heterogeneous structures SM-n1 and SM-n2 are greatly improved, so that the light absorption range is widened by the heterogeneous structures, and the absorption enhancement of visible light and infrared regions is increased. The prediction result proves that the InSe/GaAs heterostructure has extremely wide application prospect in electrode detectors and solar energy utilization.
For a photoelectric detector, the spectral response range and the optical response of the photoelectric detector are greatly enhanced by introducing a two-dimensional material InSe/GaAs heterojunction; and the long service life and the stability under room temperature of the interlayer exciton enable the exciton to be controlled through an external electric field and an optical field, and open a way for the development of a novel exciton device.
Drawings
Fig. 1 is a diagram of a novel three-dimensional trench electrode silicon detector array based on a two-dimensional material InSe/GaAs heterojunction according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a novel three-dimensional trench silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction according to an embodiment of the present invention;
FIG. 3 is a side view of a novel three-dimensional trench silicon electrode detector structure based on a two-dimensional material InSe/GaAs heterojunction according to an embodiment of the present invention;
FIG. 4 is a graph of the absorption spectrum of an InSe/GaAs heterojunction calculated based on the HSE06 method according to an embodiment of the present invention;
FIG. 5 is a top view and a side view of six InSe/GaAs heterostructures (a) - (f) SM-n1 according to one embodiment of the present invention;
FIG. 6 is a schematic diagram of an InSe/GaAs heterojunction fabrication stack in accordance with an embodiment of the present invention.
Wherein: 1. a peripheral electrode; 2. a center electrode; 3. a nesting portion; 4. an electrode contact layer; 5. a lower silicon dioxide protective layer; 6. a base portion; 7. and isolating the silicon body.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
As used herein, the term "comprising" or "includes" can be open, semi-closed, and closed. In other words, the term also includes "consisting essentially of …," or "consisting of ….
The embodiment of the invention provides a three-dimensional groove silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction. The three-dimensional groove silicon electrode detector can be applied to photoelectric detectors such as visible light detectors and infrared detectors; for a photoelectric detector, the spectral response range and the optical response of the photoelectric detector are greatly enhanced by introducing a two-dimensional material InSe/GaAs heterojunction; and the long service life and the stability under room temperature of the interlayer exciton enable the exciton to be controlled through an external electric field and an optical field, and open a way for the development of a novel exciton device.
A three-dimensional groove silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction comprises an isolation silicon body 7, wherein the isolation silicon body 7 is made of two-dimensional material InSe/GaAs heterojunction material, the two-dimensional material InSe/GaAs heterojunction is a direct band gap type II heterostructure, and the type II heterostructure comprises a heterostructure (SM-n2) with Ga end contact and a heterostructure (SM-n1) with As end contact; the band gap of the heterostructure contacted with the Ga end is 0.62-1.32eV, and the band gap of the heterostructure contacted with the As end is 1.84-1.95 eV.
The two-dimensional material InSe/GaAs heterojunction material is prepared by the following preparation method:
(1) a nano-imprinting soft template (stamp) at the top of the glass slide contacts the two-dimensional material GaAs crystal on the adhesive tape, when the adhesive tape is separated, a two-dimensional material GaAs thin layer is remained on the nano-imprinting soft template, and the ultrathin two-dimensional material GaAs on the nano-imprinting soft template is searched under a microscope;
(2) preparing an ultrathin two-dimensional material InSe on a substrate by adopting a Chemical Vapor Deposition (CVD) method;
(3) the spatial positions of the two-dimensional material GaAs and the two-dimensional material InSe are distinguished through a microscope, and the two three-dimensional displacement platforms enable the two-dimensional material GaAs and the two-dimensional material InSe to be completely consistent in the spatial positions so as to be overlapped and contacted;
(4) and slightly applying force to the glass slide where the two-dimensional material GaAs is positioned, adhering the two-dimensional material GaAs and the two-dimensional material InSe together, slowly separating the nano-imprinting soft template from the InSe/GaAs heterojunction, separating the nano-imprinting soft template from the GaAs, and leaving the InSe/GaAs heterojunction on the substrate.
A schematic of an InSe/GaAs heterojunction fabrication stack is shown in fig. 6.
The nano-imprinting soft template (stamp) in the step (1) is preferably PDMSstamp, PPC and PMMAstamp; the PDMS is polydimethylsiloxane, the PMMA is polymethyl methacrylate, and the PPC is polymethyl ethylene carbonate.
The ultrathin film in the step (1) and the step (2) is of a single-layer atomic thickness.
The chemical vapor deposition method in the step (2) specifically comprises the following steps: putting the substrate into a furnace chamber, circulating one or more gaseous precursors in the furnace chamber, and then depositing the precursors on the surface of the substrate in a reaction manner; the precursor refers to InI and Se powder for preparing InSe.
The substrate in step (2) is preferably a silicon wafer.
The glass slide where the two-dimensional material GaAs is located in the step (4) is characterized in that the nano-imprinting soft template printed with the ultrathin two-dimensional material GaAs is arranged on the top of the glass slide.
And (4) slightly applying force, specifically, lightly touching with a fingertip, and adhering the two-dimensional materials together.
As shown in fig. 1-3, the three-dimensional groove silicon electrode detector based on the two-dimensional material InSe/GaAs heterojunction further comprises a peripheral electrode 1, a central electrode 2, a nesting part 3, an electrode contact layer 4, a silicon dioxide protection layer 5 and a silicon substrate; a hollow peripheral electrode 1 is arranged on the silicon dioxide protective layer 5, and a silicon substrate and a central electrode 2 are arranged in the peripheral electrode 1; the silicon substrate comprises a substrate part 6 and a nested part 3, the cross section of the substrate part 6 is the same as that of a lower silicon dioxide protective layer 5, the nested part 3 is embedded in a peripheral electrode 1, isolation silicon bodies 7 are filled between a central electrode 2 and the peripheral electrode 1 and between the nested part 3 and the peripheral electrode 1, electrode contact layers 4 are arranged on the tops of the peripheral electrode 1 and the central electrode 2, electrode contact ports are arranged on the electrode contact layers 4, and an upper silicon dioxide protective layer is arranged on the top of the isolation silicon body 7.
The height of the electrode detector is 300-500 mu m;
the cross section of the silicon dioxide protective layer 5 is quadrilateral, and the thickness is 1 mu m;
the peripheral electrode 1 is a hollow straight quadrangular prism structure, the width of an n + heavily doped phosphorus-silicon (p + heavily doped boron silicon) electrode is 10 mu m, and the doping concentration is 1019cm-3；
The substrate part 6 is preferably a p-type silicon substrate, p-type lightly doped borosilicate, with a doping concentration of 1012cm-3The purpose is to stabilize the mechanical structure of the device, do not contribute to the performance of the detector, and have a height of 30-50 μm;
the nesting part 3 is preferably in a waist-shaped cross section and has the height of 30-50 mu m;
the cross section of the central electrode 2 is preferably in a shape of a waist circle, the width of a p + heavily doped borosilicate (n + heavily doped phosphorus silicon) electrode is 10 mu m, and the doping concentration is 1019cm-3；
The electrode contact layer 4 is an aluminum layer, and the thickness of the electrode is 1 mu m.
The isolation silicon body 7 is a two-dimensional material InSe/GaAs heterojunction, and the width is 50 μm.
According to the two-dimensional material InSe/GaAs heterojunction, a heterostructure with different stacking models is constructed for completely optimized single-layer InSe and GaAs, and as a result, six types of stacking models are obtained and are marked as stacking models n (abbreviated as SM-n; n is 1, 2, 3, 4, 5 and 6). Structurally, a single-layer GaAs has two terminals, namely a Ga terminal and an As terminal, and different terminals can cause different properties and properties when contacting InSe to construct a heterostructure. Therefore, we define As and Ga terminals As class 1 and class 2 terminals, respectively, and each SM-n is divided into two types, SM-n1 and SM-n 2. The heterostructure formed by the As-terminated monolayer InSe is defined As SM-n1, and the heterostructure formed by the Ga-terminated monolayer InSe is defined As SM-n 2. FIG. 5 shows top and side views of six InSe/GaAs heterostructures of SM-n 1. The InSe/GaAs heterojunction is prepared by an artificial fixed-point transfer method and a CVD synthesis method, wherein the common transfer media of the artificial fixed-point transfer method are PDMS, PPC and PMMA; in addition, Chemical Vapor Deposition (CVD) is also a common laboratory synthesis method, and growth of different types of heterojunctions can be achieved by regulating the temperature, composition, speed and direction of the gas flow.
The light absorption coefficients of SM-11 and SM-12 are shown in FIG. 4. In a visible light region, part of light is absorbed by the single-layer GaAs, and the single-layer InSe hardly absorbs the light; in the ultraviolet region, a single layer of InSe and GaAs can absorb part of light. Compared with an isolated monomer, the heterostructure not only obviously expands the light absorption range, even to an infrared region, but also obviously improves the light absorption intensity. The red-shift phenomenon of the absorption range may be due to the band gap reduction caused by the heterostructure construction. The reason for the increased light absorption intensity may be due to interlayer coupling effects in the heterostructure, the type II interleaved heterostructure making it easier for electrons to flow from the GaAs layer to the InSe layer. The results show that the use efficiency of the single-layer InSe to sunlight can be obviously improved by constructing the heterostructure by using the GaAs single layer, and the expected effect is achieved.
The patent utilizes a first principle calculation method to establish an InSe/GaAs heterostructure by stacking single layers of InSe and GaAs. The calculations show that all heterostructures are direct bandgap type II heterostructures, with Ga-end contacted heterostructures (SM-n2) exhibiting more stable characteristics, with smaller bandgaps (0.62-1.32eV), larger bandgaps (1.84-1.95eV) and As-end contacted heterostructures (SM-n1) at appropriate band edge positions, suitable for field effect transistors, photodetectors and photovoltaics. The calculation of the light absorption coefficient shows that: compared with a single-layer InSe carrier mobility, the heterogeneous structures SM-n1 and SM-n2 are greatly improved, so that the light absorption range is widened by the heterogeneous structures, and the absorption enhancement of visible light and infrared regions is increased. The prediction result proves that the InSe/GaAs heterostructure has extremely wide application prospect in solar energy utilization.
For a photoelectric detector, the spectral response range and the optical response of the photoelectric detector are greatly enhanced by introducing a two-dimensional material InSe/GaAs heterojunction; and the long service life and the stability under room temperature of the interlayer exciton enable the exciton to be controlled through an external electric field and an optical field, and open a way for the development of a novel exciton device.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A three-dimensional groove silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction is characterized in that: the isolation silicon body is made of a two-dimensional material InSe/GaAs heterojunction material, the two-dimensional material InSe/GaAs heterojunction is a direct band gap type II heterostructure, and the type II heterostructure comprises a heterostructure in Ga end contact and a heterostructure in As end contact; the band gap of the heterostructure contacted with the Ga end is 0.62-1.32eV, and the band gap of the heterostructure contacted with the As end is 1.84-1.95 eV.
2. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 1, wherein: the two-dimensional material InSe/GaAs heterojunction material is prepared by the following preparation method:
(1) the nano-imprinting soft template at the top of the glass slide is contacted with the two-dimensional material GaAs crystal on the adhesive tape, when the adhesive tape is separated, the two-dimensional material GaAs thin layer is remained on the nano-imprinting soft template, and the ultrathin two-dimensional material GaAs on the nano-imprinting soft template is searched under a microscope;
(2) preparing an ultrathin two-dimensional material InSe on a substrate;
(3) the spatial positions of the two-dimensional material GaAs and the two-dimensional material InSe are distinguished through a microscope, and the two three-dimensional displacement platforms enable the two-dimensional material GaAs and the two-dimensional material InSe to be completely consistent in the spatial positions so as to be overlapped and contacted;
(4) and slightly applying force to the glass slide where the two-dimensional material GaAs is positioned, adhering the two-dimensional material GaAs and the two-dimensional material InSe together, slowly separating the nano-imprinting soft template from the InSe/GaAs heterojunction, separating the nano-imprinting soft template from the GaAs, and leaving the InSe/GaAs heterojunction on the substrate.
3. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 2, wherein: the nano-imprinting soft template in the step (1) is PDMS stamp, PPC and PMMAstamp; the PDMS is polydimethylsiloxane, the PMMA is polymethyl methacrylate, and the PPC is polymethyl ethylene carbonate.
4. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction of claim 2, wherein: further, the ultrathin film in the step (1) and the step (2) is a monolayer of atoms;
the preparation in the step (2) is carried out by adopting a chemical vapor deposition method;
in the step (2), the substrate is a silicon wafer.
5. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 1, wherein: the silicon-based solar cell further comprises a peripheral electrode, a central electrode, a nested part, an electrode contact layer, a lower silicon dioxide protective layer and a silicon substrate; a hollow peripheral electrode is arranged on the lower silicon dioxide protective layer, and a silicon substrate and a central electrode are arranged in the peripheral electrode; the silicon substrate comprises a substrate part and a nested part, the cross section of the substrate part is the same as that of the lower silicon dioxide protective layer, the nested part is embedded in the peripheral electrode, isolation silicon bodies are filled between the central electrode and the peripheral electrode and between the nested part and the peripheral electrode, electrode contact layers are arranged on the tops of the peripheral electrode and the central electrode, electrode contact ports are arranged on the electrode contact layers, and the upper silicon dioxide protective layer is arranged on the top of the isolation silicon body.
6. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction of claim 5, wherein: the height of the electrode detector is 300-500 mu m; the cross section of the silicon dioxide protective layer is quadrilateral, and the thickness of the silicon dioxide protective layer is 1 mu m.
7. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 5, wherein: the peripheral electrode is of a hollow straight quadrangular prism structure, the peripheral electrode is n + heavily doped phosphorus silicon or p + heavily doped borosilicate, the electrode width of the n + heavily doped phosphorus silicon or p + heavily doped borosilicate is 10 mu m, and the doping concentration is 1019cm-3。
8. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction of claim 5, wherein: the substrate is p-type silicon substrate and p-type lightly doped borosilicate with the doping concentration of 1012cm-3And the height is 30-50 μm.
9. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction of claim 5, wherein: the central electrode isp + heavy doping borosilicate or n + heavy doping phosphorus silicon, wherein the electrode width of the p + heavy doping borosilicate or n + heavy doping phosphorus silicon is 10 mu m, and the doping concentration is 1019cm-3。
10. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction of claim 5, wherein: the height of the nesting part is 30-50 μm;
the electrode contact layer is an aluminum layer, and the thickness of the electrode is 1 mu m.
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