CN113921667B - Mid-infrared light-emitting device, preparation method thereof, light-emitting assembly and light-emitting equipment - Google Patents
Mid-infrared light-emitting device, preparation method thereof, light-emitting assembly and light-emitting equipment Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000010931 gold Substances 0.000 claims abstract description 44
- 229910052737 gold Inorganic materials 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 230000005284 excitation Effects 0.000 claims abstract description 12
- 238000004026 adhesive bonding Methods 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 239000003292 glue Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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Abstract
The invention discloses a mid-infrared light emitting device and a preparation method thereof, a light emitting assembly and a light emitting device, wherein the light emitting device is provided with a multilayer structure, the multilayer structure comprises a silicon substrate, a first silicon oxide layer, a first gold film, a second silicon oxide layer, a second gold film structure and a black phosphorus layer which are sequentially arranged, the second gold film structure comprises an array structure formed by a plurality of repeating units, and the repeating units comprise a first repeating unit element and a second repeating unit element; the repeating units are repeatedly arranged along the first extending direction to form a repeating unit row structure, and the array structure comprises a plurality of repeating unit row structures which are arranged in parallel. The invention realizes double resonance of the excitation light wavelength and the emission peak position of the black phosphorus sample, achieves higher quantum efficiency, realizes the resonance of the excitation light and the emission peak position of the sample, realizes double resonance effect, and can further realize the improvement of the quantum efficiency.
Description
Technical Field
The present invention relates to semiconductor light emitting technology, and more particularly to a mid-infrared light emitting device, a method for manufacturing the same, a light emitting assembly and a light emitting apparatus.
Background
In the prior art, the emission of a sample is locally enhanced by mostly adopting metal quantum dots or structures, the form of quantum dot enhanced luminescence has randomness, and the fluorescence emission peak position of the sample is mostly considered in the current structurally enhanced device.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Disclosure of Invention
The invention aims to provide a mid-infrared light-emitting device, a preparation method thereof, a light-emitting component and light-emitting equipment, which can greatly improve the quantum efficiency of the device by carrying out double-resonance structure design by considering the properties of incident light and sample emitted light, and simultaneously, the invention modulates the mid-infrared light-emitting black phosphorus, thereby having more significance for improving the mid-infrared efficiency and laying a foundation for the future mid-infrared light-emitting devices.
To achieve the above objects, embodiments of the present invention provide a mid-infrared light emitting device, having a multi-layer structure, the multilayer structure comprises a silicon substrate, a first silicon oxide layer, a first gold film, a second silicon oxide layer, a second gold film structure and a black phosphorus layer which are sequentially arranged, wherein the second gold film structure comprises an array structure formed by a plurality of repeating units, each repeating unit comprises a first repeating unit element and a second repeating unit element, each first repeating unit element has a first extending direction and a second extending direction, a first length D1 is formed in the first extending direction, a second length D2 is formed in the second extending direction, each second repeating unit element has a third extending direction and a fourth extending direction, a third length D3 is formed in the third extending direction, a fourth length D4 is formed in the fourth extending direction, the first extending direction is parallel to the third extending direction, and D1> D3 is satisfied; the repeating units are repeatedly arranged along the first extending direction to form a repeating unit row structure, and the array structure comprises a plurality of repeating unit row structures which are arranged in parallel.
In one or more embodiments of the invention, D2= D4.
In one or more embodiments of the invention, the third direction of extension and the fourth direction are parallel or cross.
In one or more embodiments of the invention, the array structure is within a two-dimensional coordinate system in which one axis extends parallel to the first direction and the other axis is perpendicular to the first direction or parallel to the second direction or parallel to the fourth direction.
In one or more embodiments of the present invention, the silicon substrate is a P-type silicon substrate or an N-type silicon substrate or an intrinsic silicon substrate.
In one or more embodiments of the present invention, the first repeating unit piece has a symmetrical structure, and the first extending direction is perpendicular to the second extending direction.
In one or more embodiments of the present invention, the second repeating unit piece has a symmetrical structure, and the third extending direction is perpendicular to the fourth extending direction.
In one or more embodiments of the present invention, the first and second repeating unit pieces among the repeating units are each of a rectangular structure.
In one or more embodiments of the present invention, the repeating unit has a repeating period of T1 in the first extending direction, wherein T1> D1+ D3.
In one or more embodiments of the present invention, the repeating period of the repeating unit in the second extending direction is T2, wherein T2> Max (D2, D4), Max (D2, D4) refers to the larger of D2, D4.
In one or more embodiments of the present invention, a method for manufacturing a mid-infrared light emitting device includes the steps of: preparing a substrate, wherein the substrate is a silicon substrate with a first silicon oxide layer formed in at least one partial region; forming a first gold film on the surface of the first silicon oxide layer; forming a second silicon dioxide layer on the surface of the first gold film; gluing and photoetching the surface of the second silicon dioxide layer to obtain a gluing structure matched with the second gold mold structure; forming a second gold mold structure according to the gluing structure; and transferring the black phosphorus layer to the surface of the second gold film structure.
In one or more embodiments of the invention, the mid-infrared light-emitting component includes the mid-infrared light-emitting device and the excitation light source, and at least the black phosphorus layer on the mid-infrared light-emitting device is irradiated by the excitation light source.
In one or more embodiments of the present invention, the mid-infrared light-emitting device includes a mid-infrared light-emitting device as described above or a mid-infrared light-emitting assembly as described above.
Compared with the prior art, according to the mid-infrared light-emitting device, the preparation method thereof, the light-emitting component and the light-emitting equipment, the wavelength characteristics of the excitation light and the radiation light are considered, the double resonance design is carried out on the used light source and the emission light of the black phosphorus, the quantum efficiency can be effectively improved, meanwhile, the corresponding design purpose is realized, and the double resonance of the excitation light and the emission light is achieved by utilizing the plasmon structure and the double-peak resonance. The emission peak of the black phosphorus sample is 3500nm and is in the mid-infrared band, and the higher quantum efficiency is beneficial to the utilization of signals in the band in the future.
Aiming at the existing problems, the invention realizes double resonance of the excitation light wavelength and the emission peak position of the black phosphorus sample, achieves higher quantum efficiency, realizes the resonance of the excitation light and the emission peak position of the sample, realizes the double resonance effect, and can further realize the improvement of the quantum efficiency.
Drawings
FIG. 1 is a schematic structural diagram of a second gold film structure according to an embodiment of the invention;
fig. 2 is a schematic structural view of a mid-infrared light emitting device according to an embodiment of the present invention;
fig. 3 is a flow chart of a molding process of a mid-infrared light emitting device according to an embodiment of the present invention;
fig. 4 is a schematic diagram of FDTD simulation of a mid-infrared light emitting device according to an embodiment of the present invention;
FIG. 5a is a schematic diagram of a structure of yet another possible repeating unit of a second gold film structure according to an embodiment of the invention;
FIG. 5b is a schematic diagram of a structure of yet another possible repeating unit of a second gold film structure according to an embodiment of the invention;
FIG. 5c is a schematic diagram of a structure of yet another possible repeating unit of the second gold film structure according to an embodiment of the invention;
FIG. 6a is a schematic diagram of a coordinate system building of a repeating direction of still another possible repeating unit of a second gold film structure according to an embodiment of the invention;
FIG. 6b is a schematic diagram of a coordinate system building of a repeating direction of still another possible repeating unit of the second gold film structure according to an embodiment of the invention;
fig. 6c is a schematic diagram of a coordinate system construction, which is a repeating direction of still another possible repeating unit of the second gold film structure according to an embodiment of the present invention.
Detailed Description
The following detailed description of the present invention is provided in conjunction with the accompanying drawings, but it should be understood that the scope of the present invention is not limited to the specific embodiments.
Throughout the specification and claims, unless explicitly stated otherwise, the word "comprise", or variations such as "comprises" or "comprising", will be understood to imply the inclusion of a stated element or component but not the exclusion of any other element or component.
The metal nano structure supports a surface plasmon mode, can enhance a local electromagnetic field, increases the density of local optical states, and realizes the light field control of breaking through the diffraction limit. In a coupling system of a plasmon nanometer structure and a quantum luminous body, on one hand, the plasmon nanometer structure can increase the luminous intensity and the transition rate of excitons and regulate the emission characteristics of the excitons, and has important application prospects in the fields of luminous devices, single photon sources, high-resolution imaging, sensing detection and the like. On the other hand, when the coupling strength of the surface plasmon and the exciton is sufficiently large and exceeds the average loss of the surface plasmon and the exciton, the surface plasmon-exciton polariton is formed, has the dual properties of light and substances, and can be used in the fields of room-temperature bose-einstein condensation, polariton laser, single photon nonlinearity, quantum entanglement and the like. The spectral distribution of the surface plasmon resonance results in a specific spectral shape of the fluorescence. By reasonably designing the plasma nano structure, the emission direction can be well controlled, and the high-efficiency collection of fluorescence is facilitated. The plasmonic antenna also efficiently affects the polarization of the fluorescent emission through plasmon-exciton coupling. The interaction between the surface plasmon and the exciton may mediate an energy transfer process between the quantum dots, enabling the energy transfer to be transmitted over longer distances. Black phosphorus is a new type of layer-dependent direct bandgap two-dimensional material, and as the number of layers increases, the bandgap of black phosphorus varies from 2.0 eV for a single layer to 0.3 eV for a bulk, which covers the near-infrared to mid-infrared range, thus leading to a great deal of research. Based on the characteristic of direct band gap, the invention further improves the luminous efficiency of the sample by designing a plasmon structure and double-resonance design, and is the invention design for realizing the high-efficiency black phosphorus luminous device. The ability to enhance nearby electromagnetic field signals on a nanometer scale has many potential applications.
As shown in fig. 1 to 6c, wherein the dotted line with an arrow in fig. 1 and fig. 6a to 6c indicates the direction of the repetitive arrangement of the repeating units. The mid-infrared light emitting device according to the preferred embodiment of the present invention may include a light emitting function part of a multi-layered structure, and the light emitting function part may include a silicon substrate 01, a first silicon oxide layer 02, a first gold film 03, a second silicon oxide layer 04, a second gold film structure 05, and a black phosphorus layer 06, which are sequentially disposed, where the multi-layered structure is disposed in an arrangement direction from the silicon substrate to the black phosphorus layer.
In one or more embodiments of the present invention, the second gold film 05 structure is formed by combining a specific pattern structure prepared by photolithography with vacuum sputtering or electron beam evaporation, and the like, and the combination of these two techniques forms the structural configuration required by the present invention, where the consideration of the pattern structure can be determined by the comprehensive consideration of the film thickness of the black phosphorus layer 06, the dielectric property of the second silicon oxide layer 04, and the requirement of the luminescence property of the product.
In one or more embodiments of the invention, the second gold film 05 structure includes an array structure formed of several repeating units, the repeating units include a first repeating unit piece 051 and a second repeating unit piece 052, the first repeating unit piece 051 has a first extending direction and a second extending direction and has a first length D1 in the first extending direction and a second length D2 in the second extending direction, the second repeating unit piece 052 has a third extending direction and a fourth extending direction and has a third length D3 in the third extending direction and a fourth length D4 in the fourth extending direction, the first extending direction is parallel to the third extending direction, and D1> D3 is satisfied; the repeating units are repeatedly arranged along the first extending direction to form a repeating unit row structure, and the array structure comprises a plurality of repeating unit row structures which are arranged in parallel. One possible scheme is shown as shown in fig. 1, in which the first repeating unit piece 051 and the second repeating unit piece 052 both take the form of rectangles, and the repeating units are formed in an M x N array in a rectangular coordinate system with two coordinate axes in the direction of two adjacent sides of the rectangle. And at this time, the repetition period of the repeating unit in the direction of the horizontal axis is T1, wherein T1> D1+ D3. The repetition period in the longitudinal axis direction is T2, where T2> Max (D2, D4). Wherein, D2= D4 may be further defined.
In one or more embodiments of the present invention, the array structure of the second gold film 05 structure may also be implemented in other types of coordinate systems, as shown in fig. 5 a-5 c and fig. 6 a-6 c, which also illustrate some possibilities, and the arrangement of the repeating units may be in a non-rectangular coordinate system as shown by the dashed arrows in the figure. It is understood that the repeating unit may have an oval structure shown in fig. 5a, other circular structures, a circular-like structure, etc., or may have an acute angle structure or an obtuse angle structure, such as a parallelogram, a rhombus, a triangle, a pentagon, etc., as shown in fig. 5b and 5c, in addition to the rectangular structure shown in fig. 1. Each of the repeating units in the repeating unit may have a symmetrical structure or an asymmetrical structure.
In one or more embodiments of the present invention, a method for manufacturing a mid-infrared light emitting device, as shown in fig. 3, may include the steps of: preparing a substrate, wherein the substrate is a silicon substrate 01 with a first silicon oxide layer 02 formed on at least one partial region, and the first silicon oxide layer 02 can be formed on one surface of the silicon substrate 01 adjacent to the first gold film 03 in the whole process so as to achieve the effect of medium isolation; forming a first gold film 03 on the surface of the first silicon oxide layer 02; forming a second silicon oxide layer 04 on the surface of the first gold film 03; coating glue on the surface of the second silicon dioxide layer 04, photoetching according to design, and removing the glue to obtain a glue coating structure which is adaptive to the second gold mold structure; forming a second gold mold structure according to the gluing structure; and transferring the black phosphorus layer 06 to the surface of the second gold film 05 structure.
It was found through studies that, for the purpose of achieving the double resonance, the thickness of the black phosphorus layer cannot be higher than 100nm because the plasmon attenuation depth is within 100nm, and the thickness of the black phosphorus layer is not smaller than 10nm (the light emission wavelength of black phosphorus of 10nm or less is not in this range). For example, the thickness of the black phosphor layer may be selected from any one of the ranges of 10nm, 15nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm and 10-100nm, and is optimally selected according to the design requirements of the product.
In one or more embodiments of the present invention, the device structure is as shown in fig. 2, for example, the size of the gold structure of the uppermost layer may be: the transverse period is 1020nm, the longitudinal period is 650nm, the length of the long rod is 810nm, the length of the short rod is 110nm, and the width of the short rod is 100 nm. The device sequentially comprises a P-type silicon substrate 01, a silicon dioxide layer (a first silicon oxide layer 02) with the thickness of 285nm, a gold layer (a first gold film 03) with the thickness of 150nm, a silicon dioxide layer (a second silicon oxide layer 04) with the thickness of 50nm, a gold structure (a second gold film 05) with the thickness of 50nm from bottom to top, and finally black phosphorus is transferred to form the uppermost black phosphorus layer 06.
Aiming at the intermediate infrared light-emitting device, the device manufacturing process comprises the steps of carrying out electron beam evaporation on a first gold film 03 with the thickness of 150nm on a P-type silicon substrate 01 with a first silicon oxide layer 02 with the thickness of 285nm, then carrying out deposition on the first silicon oxide layer 02 by using an Oxford plasma system-100 inductively coupled plasma chemical vapor deposition system, wherein the deposition time is 75 seconds and the deposition thickness is 50nm, then coating photoresist on the surface to carry out an electron beam lithography process, developing to expose a top layer pattern, then carrying out electron beam evaporation on a second gold film 05 with the thickness of 50nm, and removing a glue layer to obtain a second gold film 05 structure. Finally, the layered black phosphorus with the thickness of 50nm is transferred to the second gold film 05 structure, so as to obtain the mid-infrared light-emitting device shown in fig. 2, and the process flow chart is shown in fig. 3.
For the mid-infrared light emitting device, the simulation result by FDTD software is shown in fig. 4, where the excitation wavelength is: 800nm (repetition frequency 80MHz, pulse width 100 fs); black phosphor layer (bulk) radiation wavelength of 50 nm: and the simulation result shows that the resonance intensity of incident light at 800nm and scattered light at 3500nm is higher, and double resonance enhancement is realized.
Including, but not limited to, the mid-infrared light emitting devices described above, may be used in a light emitting part or a light emitting apparatus.
The foregoing descriptions of specific exemplary embodiments of the present invention have been presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain certain principles of the invention and its practical application to enable one skilled in the art to make and use various exemplary embodiments of the invention and various alternatives and modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.
Claims (8)
1. A mid-infrared light emitting device is characterized by having a multilayer structure comprising a silicon substrate, a first silicon oxide layer, a first gold film, a second silicon oxide layer, a second gold film structure and a black phosphorus layer which are sequentially arranged,
wherein the second gold film structure comprises an array structure formed by a plurality of repeating units, the repeating units comprise first repeating units and second repeating units, the first repeating units have a first extending direction and a second extending direction, and have a first length D1 in the first extending direction and a second length D2 in the second extending direction, the second repeating units have a third extending direction and a fourth extending direction, and have a third length D3 in the third extending direction and a fourth length D4 in the fourth extending direction, the first extending direction is parallel to the third extending direction, and D1> D3 is satisfied;
the repeating units are repeatedly arranged along a first extending direction to form a repeating unit row structure, and the array structure comprises a plurality of repeating unit row structures which are arranged in parallel;
the first repeating unit piece has a symmetrical structure, and the first extending direction is perpendicular to the second extending direction, the second repeating unit piece has a symmetrical structure, and the third extending direction is perpendicular to the fourth extending direction.
2. The mid-infrared light emitting device of claim 1, wherein the silicon substrate is a P-type silicon substrate or an N-type silicon substrate or an intrinsic silicon substrate.
3. The mid-infrared light emitting device of claim 1, wherein the first repeating unit piece and the second repeating unit piece in the repeating unit are each of a rectangular structure.
4. The mid-infrared light emitting device as set forth in claim 3, wherein the repeating unit has a repetition period of T1 in the first extending direction, wherein T1> D1+ D3.
5. The mid-infrared light emitting device as set forth in claim 4, wherein the repeating unit has a repetition period of T2 in the second extending direction, wherein T2> Max (D2, D4).
6. The method for producing a mid-infrared light-emitting device as set forth in any one of claims 1 to 5, comprising the steps of:
preparing a substrate, wherein the substrate is a silicon substrate with a first silicon oxide layer formed in at least one partial region;
forming a first gold film on the surface of the first silicon oxide layer;
forming a second silicon dioxide layer on the surface of the first gold film;
gluing and photoetching the surface of the second silicon dioxide layer to obtain a gluing structure matched with the second gold mold structure;
forming a second gold mold structure according to the gluing structure;
and transferring the black phosphorus layer to the surface of the second gold film structure.
7. A mid-infrared light-emitting module comprising the mid-infrared light-emitting device according to any one of claims 1 to 5 and an excitation light source, wherein at least the black phosphor layer on the mid-infrared light-emitting device is irradiated with the excitation light from the excitation light source.
8. Mid-infrared light emitting apparatus comprising the mid-infrared light emitting device according to any one of claims 1 to 5 or the mid-infrared light emitting module according to claim 7.
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Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020010060A (en) * | 2000-07-28 | 2002-02-02 | 박호군 | Method of manufacturing infrared sensing layer using multi layer thin films |
| CN1622285A (en) * | 2004-12-13 | 2005-06-01 | 中国科学院上海技术物理研究所 | Composite substrate for epitaxy growth of gallium nitride |
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| CN102169932A (en) * | 2011-01-15 | 2011-08-31 | 郑州大学 | Gallium nitride/silicon nano bore log array heterostructure yellow-blue light and near infrared light emitting diode and manufacturing method thereof |
| CN102255016A (en) * | 2011-08-17 | 2011-11-23 | 南京大学 | Silicon-based near infrared light emitting material and preparation method |
| CN102683522A (en) * | 2012-06-04 | 2012-09-19 | 中国科学院半导体研究所 | Manufacture method of light-emitting diode with air bridge structure |
| CN103560192A (en) * | 2013-11-05 | 2014-02-05 | 天津工业大学 | Metal plasmon coupling luminescence enhancement silicon substrate LED and manufacturing method thereof |
| CN103922274A (en) * | 2014-04-30 | 2014-07-16 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional infrared light source and manufacturing method thereof |
| CN104458011A (en) * | 2013-09-13 | 2015-03-25 | 北京大学 | Full waveband infrared focal plane array based on MEMS technology |
| CN106328720A (en) * | 2016-09-07 | 2017-01-11 | 鲍小志 | Graphene-phosphorus heterojunction photodetector and manufacturing method |
| CN206022376U (en) * | 2016-09-07 | 2017-03-15 | 鲍小志 | A kind of Graphene black phosphorus heterojunction photoelectric detector |
| CN107101728A (en) * | 2017-05-11 | 2017-08-29 | 烟台睿创微纳技术股份有限公司 | A kind of double-colored polarized ir detector of non-brake method and its manufacture method |
| CN110098267A (en) * | 2019-04-09 | 2019-08-06 | 深圳激子科技有限公司 | A kind of graphene mid-infrared light detector and preparation method thereof based on the enhancing of phonon excimer |
| CN110471137A (en) * | 2019-09-17 | 2019-11-19 | 厦门理工学院 | A kind of two-band infrared wave-absorbing device |
| CN111239866A (en) * | 2020-03-04 | 2020-06-05 | 江西师范大学 | Ultra-wideband mid-infrared band perfect wave absorber and preparation method thereof |
| CN111554780A (en) * | 2020-05-14 | 2020-08-18 | 南方科技大学 | Intermediate infrared light-emitting diode with heterojunction and preparation method thereof |
| CN111554757A (en) * | 2020-05-11 | 2020-08-18 | 深圳激子科技有限公司 | Plasmon enhancement-based graphene mid-infrared light detector and preparation method thereof |
-
2021
- 2021-12-06 CN CN202111474548.6A patent/CN113921667B/en active Active
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020010060A (en) * | 2000-07-28 | 2002-02-02 | 박호군 | Method of manufacturing infrared sensing layer using multi layer thin films |
| CN1622285A (en) * | 2004-12-13 | 2005-06-01 | 中国科学院上海技术物理研究所 | Composite substrate for epitaxy growth of gallium nitride |
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| CN102169932A (en) * | 2011-01-15 | 2011-08-31 | 郑州大学 | Gallium nitride/silicon nano bore log array heterostructure yellow-blue light and near infrared light emitting diode and manufacturing method thereof |
| CN102255016A (en) * | 2011-08-17 | 2011-11-23 | 南京大学 | Silicon-based near infrared light emitting material and preparation method |
| CN102683522A (en) * | 2012-06-04 | 2012-09-19 | 中国科学院半导体研究所 | Manufacture method of light-emitting diode with air bridge structure |
| CN104458011A (en) * | 2013-09-13 | 2015-03-25 | 北京大学 | Full waveband infrared focal plane array based on MEMS technology |
| CN103560192A (en) * | 2013-11-05 | 2014-02-05 | 天津工业大学 | Metal plasmon coupling luminescence enhancement silicon substrate LED and manufacturing method thereof |
| CN103922274A (en) * | 2014-04-30 | 2014-07-16 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional infrared light source and manufacturing method thereof |
| CN106328720A (en) * | 2016-09-07 | 2017-01-11 | 鲍小志 | Graphene-phosphorus heterojunction photodetector and manufacturing method |
| CN206022376U (en) * | 2016-09-07 | 2017-03-15 | 鲍小志 | A kind of Graphene black phosphorus heterojunction photoelectric detector |
| CN107101728A (en) * | 2017-05-11 | 2017-08-29 | 烟台睿创微纳技术股份有限公司 | A kind of double-colored polarized ir detector of non-brake method and its manufacture method |
| CN110098267A (en) * | 2019-04-09 | 2019-08-06 | 深圳激子科技有限公司 | A kind of graphene mid-infrared light detector and preparation method thereof based on the enhancing of phonon excimer |
| CN110471137A (en) * | 2019-09-17 | 2019-11-19 | 厦门理工学院 | A kind of two-band infrared wave-absorbing device |
| CN111239866A (en) * | 2020-03-04 | 2020-06-05 | 江西师范大学 | Ultra-wideband mid-infrared band perfect wave absorber and preparation method thereof |
| CN111554757A (en) * | 2020-05-11 | 2020-08-18 | 深圳激子科技有限公司 | Plasmon enhancement-based graphene mid-infrared light detector and preparation method thereof |
| CN111554780A (en) * | 2020-05-14 | 2020-08-18 | 南方科技大学 | Intermediate infrared light-emitting diode with heterojunction and preparation method thereof |
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