CN108281493A - 二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备 - Google Patents
二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备 Download PDFInfo
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Abstract
本发明公开一种二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备，属于材料应用技术领域。本发明包括绝缘衬底、隧穿层、金属电极、二硒化钨纳米片。本发明利用光照下二硒化钨和金属形成的肖特基结所产生的光伏效应，实现器件自驱动探测，垂直结构扩大结区受光面积，控制二硒化钨层数实现探测波长范围可调，隧穿层抑制反向电流的增加，提高了探测器的灵敏度和响应时间。
Description
技术领域
本发明属于材料应用技术领域，特别是涉及一种二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备。
背景技术
2011年，B.Radisavl jevic等人发现以单层二硫化钼为代表的过渡金属硫族化合物，不同于石墨烯的零带隙，这类层状材料具有非常优越的光、电、磁等物理化学性能，在电子学、光电子学领域受到了广泛的关注，被认为是发展下一代纳米光电器件的候选者。二硒化钨作为典型的双极型二维半导体，层与层之间通过范德华键作用连接；带隙可由多层的间接带隙（1.3 电子伏特）变化到单层的直接带隙（1.67电子伏特）。其高载流子迁移率（空穴迁移率250平方厘米每伏每秒)，电子迁移率160平方厘米每伏每秒），超快响应时间（1皮秒），可作为电子器件、光电探测器等技术领域的优异候选者。
目前基于二硒化钨的光电探测器主要有二硒化钨光晶体管和PN结型光电探测器。虽然二硒化钨光晶体管可以实现高的光响应度，但响应时间长，且需要外加电源。虽然结型探测器可以解决响应时间长、外加电源的问题，但同质PN结型光电探测器需要复杂的掺杂工艺，异质PN结需要多种材料复合，增加器件成本。
发明内容
为了解决上述问题，本发明提出了一种二硒化钨和金属垂直型肖特基结自驱动光电探测器。该探测器利用二硒化钨纳米片与金属形成的肖特基结来有效分离光生电子空穴对，利用光照下肖特基结所产生的光伏效应，实现器件自驱动探测，垂直结构扩大了结区有效光照面积，隧穿层抑制反向光电流的增加，提高了探测器的灵敏度和响应时间。
本发明的技术方案是：一种二硒化钨和金属垂直型肖特基结自驱动光电探测器，该探测器利用二硒化钨纳米片与金属形成的肖特基结来有效分离光生电子空穴对，在光照下二硒化钨和金属肖特基结所产生的光伏效应，实现器件自驱动探测，垂直结构扩大结区受光面积，控制二硒化钨层数实现探测波长范围可调，隧穿层抑制反向电流的增加，提高了探测器的灵敏度和响应时间。
进一步，该自驱动光电探测器包括源极，隧穿层，二硒化钨层，漏极，绝缘衬底；
其中，所述源极设置在所述绝缘衬底一侧的上端，所述隧穿层覆盖在所述源极和所述绝缘衬底的另一侧，所述二硒化钨层覆盖在所述隧穿层上，所述漏极设置在所述绝缘衬底的另一侧的所述二硒化钨层上端。
进一步，所述隧穿层厚度为0.2-2纳米。
进一步，所述二硒化钨层为通过气相沉积法或者机械剥离获得二硒化钨纳米片，所述二硒化钨纳米片厚度为0.7-100纳米。
进一步，所述源极为铝、钛、铬或银电极，厚度为20-100纳米。
进一步，所述隧穿层为三氧化二铝、二氧化铪或二氧化硅，
进一步，所述的漏极包括钯、铂、金、石墨烯、有机电极，厚度为0.7-100纳米。
进一步，所述的绝缘衬底为二氧化硅衬底、蓝宝石衬底或氮化铝衬底。
本发明的另一目的是提供上述自驱动光电探测器的制备方法，该方法具体包括以下步骤：
步骤1. 将绝缘衬底依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟，取出，吹干；
步骤2. 利用热蒸镀或电子束蒸镀在绝缘衬底上蒸镀源极；
步骤3. 采用原子层沉积技术在源极上沉积隧穿层；
步骤4. 将二硒化钨转移至源极上；
步骤5. 在二硒化钨上制备漏极，即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。
进一步，所述二硒化钨和金属垂直肖特基结自驱动光电探测器的对633纳米光的响应时间上升沿0.05秒，下降沿0.08秒，暗电流达到10-15安,光电流为10-8安。
本发明的有益效果是，由于采用上述技术方案，本发明的二硒化钨和金属垂直型肖特基结自驱动光电探测器，利用二硒化钨纳米片与金属形成的肖特基结有效分离光生电子空穴对，在光照下利用肖特基结所产生的光伏效应，实现自驱动器件探测，垂直结构扩大了结区有效光照面积，隧穿层抑制反向光电流的增加，提高了探测器的灵敏度和响应时间。
附图说明
图1为一种二硒化钨和金属垂直肖特基结自驱动光电探测器的器件示意图；
图2为实例一中肖特基型自驱动光电探测器的时间-电流曲线；
图中：
1.源极、2.隧穿层、3.二硒化钨纳米片、4.漏极、5.绝缘衬底。
具体实施方式
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
下面结合实例对本发明的技术方案进行详细说明，显然，所描述的实例仅仅是本发明中很小的一部分，而不是全部的实例。基于本发明中的实例，本领域人员在没有做出创造性劳动前提下所获得的所有其他实例，都属于本发明保护的范围。
如图1所示，本发明一种二硒化钨和金属垂直型肖特基结自驱动光电探测器，该探测器利用二硒化钨纳米片与金属形成的肖特基结来有效分离光生电子空穴对，在光照下二硒化钨和金属肖特基结所产生的光伏效应，实现器件自驱动探测，垂直结构扩大结区受光面积，控制二硒化钨层数实现探测波长范围可调，隧穿层抑制反向电流的增加，提高了探测器的灵敏度和响应时间。
该自驱动光电探测器包括源极1，隧穿层2，二硒化钨层3，漏极4，绝缘衬底5；
其中，所述源极1设置在所述绝缘衬底5一侧的上端，所述隧穿层2覆盖在所述源极1和所述绝缘衬底5的另一侧，所述二硒化钨层3覆盖在所述隧穿层2上，所述漏极4设置在所述绝缘衬底5的另一侧的所述二硒化钨层3上端。
所述隧穿层2厚度为0.2-2纳米。
所述二硒化钨层3为通过气相沉积法或者机械剥离获得二硒化钨纳米片，所述二硒化钨纳米片厚度为0.7-100纳米。
所述源极1为铝、钛、铬或银电极，厚度为20-100纳米。
所述隧穿层2为三氧化二铝、二氧化铪或二氧化硅，
所述的漏极4为钯、铂、金、石墨烯或有机电极，厚度为0.7-100纳米。
所述的绝缘衬底2为二氧化硅衬底、蓝宝石衬底或氮化铝衬底。
本发明一种制备上述的自驱动光电探测器的方法，该方法具体包括以下步骤：
步骤1. 将绝缘衬底依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟，取出，吹干；
步骤2. 利用热蒸镀或电子束蒸镀在绝缘衬底上蒸镀源极；
步骤3. 采用原子层沉积技术在源极上沉积隧穿层；
步骤4. 将二硒化钨转移至源极上；
步骤5. 在二硒化钨上制备漏极，即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。
所述二硒化钨和金属垂直肖特基结自驱动光电探测器的对633纳米光的响应时间上升沿0.05秒，下降沿0.08秒，暗电流达到10-15安,光电流为10-8安。
实施例1
二硒化钨和金属垂直肖特基结自驱动光电探测器，包括源极铝电极，隧穿层三氧化二铝，机械剥离的3纳米厚二硒化钨，漏极钯电极，绝缘衬底二氧化硅。铝电极厚度为20纳米；三氧化二铝厚度为0.5纳米；钯电极厚度为30纳米。光电探测器具体制备步骤为：首先，将绝缘衬底二氧化硅依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟，取出，氮气吹干；接着，利用热蒸镀或电子束蒸镀在二氧化硅上蒸镀铝电极；然后，采用原子层沉积技术在铝电极上沉积隧穿层三氧化二铝；再次，将二硒化钨转移至隧穿层上；最后，在二硒化钨上制备钯电极，即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。光电探测器的对633纳米光的响应时间上升沿0.05秒，下降沿0.08秒，暗电流达到10-15安,光电流为10-8安。
实施例2
二硒化钨和金属垂直肖特基结自驱动光电探测器，包括源极铝电极，隧穿层三氧化二铝，机械剥离的1纳米厚二硒化钨，漏极钯电极，绝缘衬底二氧化硅。钛电极厚度为20纳米；三氧化二铝厚度为0.3纳米；钯电极厚度为50纳米。光电探测器具体制备步骤为：首先，将绝缘衬底二氧化硅依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟，取出，氮气吹干；接着，利用热蒸镀或电子束蒸镀在二氧化硅上蒸镀钛电极；然后，采用原子层沉积技术在钛电极上沉积隧穿层三氧化二铝；再次，将二硒化钨转移至隧穿层上；最后，在二硒化钨上制备钯电极，即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。光电探测器的对白光的响应时间上升沿0.01秒，下降沿0.03秒，暗电流达到10-15安,光电流为10-8安。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。
Claims (9)
1.一种二硒化钨和金属垂直型肖特基结自驱动光电探测器，其特征在于，该探测器利用二硒化钨纳米片与金属形成的肖特基结来有效分离光生电子空穴对，在光照下二硒化钨和金属肖特基结所产生的光伏效应，实现器件自驱动探测，垂直结构扩大结区受光面积，控制二硒化钨层数实现探测波长范围可调，隧穿层抑制反向电流的增加，提高了探测器的灵敏度和响应时间。
2.根据权利要求1所述的自驱动光电探测器，其特征在于，该自驱动光电探测器包括源极，隧穿层，二硒化钨层，漏极，绝缘衬底；
其中，所述源极设置在所述绝缘衬底一侧的上端，所述隧穿层覆盖在所述源极和所述绝缘衬底的另一侧，所述二硒化钨层覆盖在所述隧穿层上，所述漏极设置在所述绝缘衬底的另一侧的所述二硒化钨层上端。
3.根据权利要求2所述的自驱动光电探测器，其特征在于，所述隧穿层厚度为0.2-2纳米。
4.根据权利要求2所述的自驱动光电探测器，其特征在于，所述二硒化钨层为通过气相沉积法或者机械剥离获得二硒化钨纳米片，所述二硒化钨纳米片厚度为0.7-100纳米。
5.根据权利要求2所述的自驱动光电探测器，其特征在于，所述源极为铝、钛、铬或银电极，厚度为20-100纳米。
6.根据权利要求2所述的自驱动光电探测器，其特征在于，所述隧穿层为三氧化二铝、二氧化铪或二氧化硅。
7.根据权利要求2所述的自驱动光电探测器，其特征在于，所述的漏极包括钯、铂、金、石墨烯、有机电极，厚度为0.7-100纳米。
8.根据权利要求2所述的自驱动光电探测器，其特征在于，所述的绝缘衬底为二氧化硅衬底、蓝宝石衬底或氮化铝衬底。
9.一种制备如权利要求1-8任意一项所述的自驱动光电探测器的方法，其特征在于，该方法具体包括以下步骤：
步骤1. 将绝缘衬底依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟，取出，吹干；
步骤2. 利用热蒸镀或电子束蒸镀在绝缘衬底上蒸镀源极；
步骤3. 采用原子层沉积技术在源极上沉积隧穿层；
步骤4. 将二硒化钨转移至源极上；
步骤5. 在二硒化钨上制备漏极，即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。
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