CN107706260A - 一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器及其制备方法 - Google Patents
一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器及其制备方法，该近红外光电探测器为低维材料复合结构近红外光电探测器，具体是指利用二硒化钨(WSe2)与氧化铟(In2O3)纳米线之间功函数的差异，在这两种材料界面处形成能带弯曲，近红外光激发WSe2中的载流子积累在界面处，所形成的局域电场对In2O3纳米线沟道电导率进行调控，同时通过外加偏压的施加使得器件工作在暗电流极低的耗尽区，提高近红外探测器的光响应率和探测率。
Description
技术领域
本发明涉及一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器及其制备方法，该近红外光电探测器为低维材料复合结构近红外光电探测器，具体是指利用二硒化钨(WSe2)与氧化铟(In2O3)纳米线之间功函数的差异，在这两种材料界面处形成能带弯曲，近红外光激发WSe2中的载流子积累在界面处，所形成的局域电场对In2O3纳米线沟道电导率进行调控，同时通过外加偏压的施加使得器件工作在暗电流极低的耗尽区，提高近红外探测器的光响应率和探测率。
背景技术
现有的红外探测器通常采用了传统的窄带隙半导体作为感光材料，为了提高探测灵敏度、缩短器件响应时间、减小背景噪声的影响，这些器件的正常工作需要液氮制冷环境，这使得器件的应用场合和工作时长受到极大限制。同时，传统光电探测材料量子效率小于1的经典理论极限限制了其探测灵敏度的进一步提升。因此，如何实现室温条件下对红外光的高响应率和高探测率已成为红外探测领域的核心难点问题。近年来，随着低维纳米材料(如石墨烯、二维过渡金属硫化物)等新材料体系的构建，为实现新型的室温高性能红外探测器提供了新的思路和有效的途径，已经成为当前红外光电探测器前沿研究的焦点。
与传统光电材料相比，尽管低维材料在一些半导体性能等方面表现出独特的优势，例如：石墨烯超高的载流子迁移率可以获得很高的增益带宽、二维过渡金属硫化物半导体材料随着层数的变化带隙可调实现宽光谱探测。但低维材料较薄的原子层级的厚度也使得其在与光相互作用时不能像体材料那样实现完全吸收，因此光的利用效率很低，进而抑制了器件的光响应率和探测率。
发明内容
本发明的技术解决问题是：克服现有技术的不足，提出一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器及其制备方法。
本发明的技术解决方案是：
一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器，该近红外光电探测器包括Si/SiO2衬底、源电极、漏电极、氧化铟纳米线和二硒化钨薄片；
所述的源电极、漏电极、氧化铟纳米线和二硒化钨薄片均位于Si/SiO2衬底上，氧化铟纳米线的一端与源电极相连，氧化铟纳米线的另一端与漏电极相连，二硒化钨薄片搭在氧化铟纳米线上，即二硒化钨薄片的中间部分位于氧化铟纳米线上。
所述的二硒化钨薄片为感光材料。
所述的氧化铟纳米线为导电材料。
所述的源电极和漏电极用于收集氧化铟纳米线的电信号。
一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器的制备方法，该方法的步骤包括：
(1)采用化学气相沉积的方法生长In2O3纳米线；
(2)将步骤(1)制备的In2O3纳米线物理转移到一Si/SiO2衬底上；
(3)利用电子束光刻技术、热蒸镀金属电极制备单根In2O3纳米线的背栅晶体管器件；
(4)采用机械剥离的方法在另一Si/SiO2衬底上制备WSe2的纳米薄片；
(5)将步骤(4)制备的WSe2的纳米薄片转移到步骤(3)制备的In2O3纳米线的背栅晶体管器件上，得到二硒化钨薄片/氧化铟纳米线复合结构。
所述的步骤(2)中，Si/SiO2衬底上SiO2的厚度为100nm。
所述的步骤(2)中，Si/SiO2衬底上SiO2的厚度为285nm。
所述的步骤(5)中，将WSe2的纳米薄片转移到In2O3纳米线的背栅晶体管器件上的具体方法为：
首先在载玻片的下表面形成表面平滑的PDMS膜，将PVA膜贴附在PDMS膜的下表面上，载玻片安装在三维位移平台上，并通过显微镜将PVA膜对准机械剥离获得的WSe2薄片；通过三维位移平台将PVA膜逐渐靠近并接触WSe2薄片，同时对SiO2厚度为285nm的Si/SiO2衬底加热软化PVA膜，使得PVA膜与SiO2厚度为285nm的Si/SiO2衬底接触完全，从显微镜下观察两者接触完全后停止加热；将载玻片慢慢抬起使PVA膜与PDMS膜分离；将PVA膜从SiO2厚度为285nm的Si/SiO2衬底上慢慢剥离下来，同时WSe2薄片也附着在PVA膜上一同剥离下来；将载有WSe2薄片的PVA膜重新贴附到PDMS膜上，对准In2O3纳米线的背栅晶体管；通过三维位移平台将PVA膜逐渐靠近使得WSe2薄片接触In2O3纳米线，同时对SiO2厚度为100nm的Si/SiO2衬底加热软化PVA膜，使得PVA膜与SiO2厚度为100nm的Si/SiO2衬底接触完全，从显微镜下观察两者接触完全后停止加热；将载玻片慢慢抬起使PVA膜与PDMS膜分离；最后将SiO2厚度为100nm的Si/SiO2衬底放入去离子水中浸泡去掉PVA膜，吹干。
本发明的优点是：
本发明采用低维材料复合结构将感光材料与导电沟道分离，窄带隙的感光材料用于吸收近红外光，宽带隙的导电材料受栅压调控可获得极低的暗电流，同时，通过两种材料间的能带匹配设计，使得界面处形成能带弯曲，光生载流子在界面的积累形成的局域电场调节沟道电导，获得高响应与高探测率。
附图说明
图1为本发明的复合结构示意图；
图2为本发明的方法过程示意图；
图3为本发明的材料能带结构及工作原理示意图；
图4为在有无光照的条件下，本发明的复合结构的转移特性曲线；
图5为本发明的复合结构的响应率、探测率随光功率的变化趋势。
具体实施方式
如图1所示，一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器，该近红外光电探测器包括Si/SiO2衬底、源电极、漏电极、氧化铟纳米线和二硒化钨薄片；
所述的源电极、漏电极、氧化铟纳米线和二硒化钨薄片均位于Si/SiO2衬底上，氧化铟纳米线的一端与源电极相连，氧化铟纳米线的另一端与漏电极相连，二硒化钨薄片搭在氧化铟纳米线上，即二硒化钨薄片的中间部分位于氧化铟纳米线上；
所述的二硒化钨薄片为感光材料，氧化铟纳米线为导电材料，源电极和漏电极用于收集氧化铟纳米线的电信号。
如图2所示，一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器的制备方法，该方法的步骤包括：
(1)采用化学气相沉积的方法生长In2O3纳米线；
(2)将步骤(1)制备的In2O3纳米线物理转移到Si/SiO2(100nm)衬底上；
(3)利用电子束光刻技术、热蒸镀金属电极制备单根In2O3纳米线的背栅晶体管器件；
(4)采用机械剥离的方法在Si/SiO2(285nm)衬底上制备WSe2的纳米薄片；
(5)将步骤(4)制备的WSe2的纳米薄片转移到步骤(3)制备的In2O3纳米线的背栅晶体管器件上，得到二硒化钨薄片/氧化铟纳米线复合结构。
所述的步骤(5)中，将WSe2的纳米薄片转移到In2O3纳米线的背栅晶体管器件上的具体方法为：
首先在载玻片的下表面形成表面平滑的PDMS膜(Polydimethylsiloxane，聚二甲基硅氧烷)，将PVA膜(polyvinyl alcohol，聚乙烯醇)贴附在PDMS膜的下表面上，载玻片安装在三维位移平台上，并通过显微镜将PVA膜对准机械剥离获得的WSe2薄片(图2a)；通过三维位移平台将PVA膜逐渐靠近并接触WSe2薄片(图2b)，同时对Si/SiO2(285nm)衬底加热软化PVA膜，使得PVA膜与Si/SiO2(285nm)衬底接触完全，从显微镜下观察两者接触完全后停止加热；将载玻片慢慢抬起使PVA膜与PDMS膜分离(图2c)；将PVA膜从Si/SiO2(285nm)衬底上慢慢剥离下来，同时WSe2薄片也附着在PVA膜上一同剥离下来(图2d)；将载有WSe2薄片的PVA膜重新贴附到PDMS膜上，对准将要转移到的目标，即In2O3纳米线的背栅晶体管(图2e)；通过三维位移平台将PVA膜逐渐靠近使得WSe2薄片接触In2O3纳米线(图2f)，同时对Si/SiO2(100nm)衬底加热软化PVA膜，使得PVA膜与Si/SiO2(100nm)衬底接触完全，从显微镜下观察两者接触完全后停止加热；将载玻片慢慢抬起使PVA膜与PDMS膜分离(图2g)；最后将Si/SiO2(100nm)衬底放入去离子水中浸泡去掉PVA膜，吹干即可。
如图3所示，所得到的二硒化钨薄片/氧化铟纳米线复合结构中宽带隙(～2.75eV)的In2O3纳米线为导电材料，窄带隙(～1.2eV)的WSe2薄片为感光材料叠在In2O3纳米线导电沟道上响应近红外光；p型的WSe2薄片与n型的In2O3纳米线接触后，由于受两者之间功函数的差异的影响，在界面处形成能带弯曲，当大于WSe2薄片带隙的近红外光照射在器件上时，WSe2薄片中所激发的光生电子-空穴对受界面处内建电场的作用而分开，空穴会积累在WSe2薄片与In2O3纳米线的界面处，形成局域电场来调节In2O3纳米线的沟道电导，实现电流放大；此外，栅压的施加可有效调节WSe2薄片和In2O3纳米线的费米能级，该能带弯曲随着栅压对器件从增强区到耗尽区的调节逐渐变大，载流子在器件耗尽区的积累达到最大，因此器件可在极低的暗电流下工作获得高响应，最终得到高的探测率。
实施例
(1)采用化学气相沉积的方法生长In2O3纳米线，并将其物理转移到Si/SiO2(100nm)衬底上，利用电子束光刻技术、热蒸镀技术沉积源-漏(S-D)金属电极Cr/Au(15nm/50nm)，制备单根In2O3纳米线的背栅晶体管器件，重掺杂p型Si衬底作为背栅电极；
(2)采用机械剥离的方法在Si/SiO2(285nm)衬底上制备WSe2的纳米薄片，由于二维材料WSe2随着其层数由单层到多层的增加，带隙宽度从1.7eV减小到1.2eV，所以为了响应近红外波段，选择带隙较窄的厚的WSe2纳米薄片，并将WSe2的薄片转移到In2O3纳米线的背栅晶体管器件上，实现复合结构，如图1所示，源漏偏压为Vds，背栅偏压为Vgs；
(3)转移WSe2薄片过程：首先在载玻片的下表面形成表面平滑的PDMS膜(Polydimethylsiloxane，聚二甲基硅氧烷)，将PVA膜(polyvinyl alcohol，聚乙烯醇)贴附在PDMS膜的下表面上，载玻片安装在三维位移平台上，并通过显微镜将PVA膜对准机械剥离获得的WSe2薄片(图2a)；通过三维位移平台将PVA膜逐渐靠近并接触WSe2薄片(图2b)，同时对Si/SiO2(285nm)衬底加热软化PVA膜，使得PVA膜与Si/SiO2(285nm)衬底接触完全，从显微镜下观察两者接触完全后停止加热；将载玻片慢慢抬起使PVA膜与PDMS膜分离(图2c)；将PVA膜从Si/SiO2(285nm)衬底上慢慢剥离下来，同时WSe2薄片也附着在PVA膜上一同剥离下来(图2d)；将载有WSe2薄片的PVA膜重新贴附到PDMS膜上，对准将要转移到的目标，即In2O3纳米线的背栅晶体管(图2e)；通过三维位移平台将PVA膜逐渐靠近使得WSe2薄片接触In2O3纳米线(图2f)，同时对Si/SiO2(100nm)衬底加热软化PVA膜，使得PVA膜与Si/SiO2(100nm)衬底接触完全，从显微镜下观察两者接触完全后停止加热；将载玻片慢慢抬起使PVA膜与PDMS膜分离(图2g)；最后将Si/SiO2(100nm)衬底放入去离子水中浸泡去掉PVA膜，吹干即可；
(4)p型的WSe2薄片(带隙为1.2eV)与n型的In2O3纳米线(带隙为2.75eV)接触后，由于受两者之间功函数的差异的影响，在界面处形成能带弯曲，当入射的近红外光照射在器件上时，在WSe2薄片中激发的光生空穴会在界面处形成积累(图3)，形成的正的局域电场会增强n型纳米线的沟道电导，形成电流放大；在该复合结构中，窄带隙的WSe2薄片为感光材料，宽带隙的纳米线为导电材料，选择宽带隙的纳米线一方面是为了避免与WSe2薄片同时响应近红外波段，另一方面通过外加偏压的设置可有效的耗尽纳米线的暗电流，使得器件工作在耗尽区，实现高响应和高探测率；图4为940nm近红外光照射下复合结构的转移特性曲线，可以看到光照之后受界面处带正电荷的空穴积累影响曲线向左平移，相比于暗电流曲线，在耗尽区光电流有102nA的变化，而且复合结构的暗电流极低达到10-14～10-13A，图5为器件的光响应率与探测率随入射光功率变化的曲线，器件的最高响应率～104A/W，最高探测率为1016Jones(1Jones＝1cm Hz1/2W-1)。
Claims (10)
1.一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器，其特征在于：该近红外光电探测器包括Si/SiO2衬底、源电极、漏电极、氧化铟纳米线和二硒化钨薄片；
所述的源电极、漏电极、氧化铟纳米线和二硒化钨薄片均位于Si/SiO2衬底上，氧化铟纳米线的一端与源电极相连，氧化铟纳米线的另一端与漏电极相连，二硒化钨薄片搭在氧化铟纳米线上，即二硒化钨薄片的中间部分位于氧化铟纳米线上。
2.根据权利要求1所述的一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器，其特征在于：所述的二硒化钨薄片为感光材料。
3.根据权利要求1所述的一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器，其特征在于：所述的氧化铟纳米线为导电材料。
4.根据权利要求1所述的一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器，其特征在于：所述的源电极和漏电极用于收集氧化铟纳米线的电信号。
5.根据权利要求1所述的一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器，其特征在于：所述的Si/SiO2衬底为两个，其中一个Si/SiO2衬底上SiO2的厚度与另一个Si/SiO2衬底上SiO2的厚度不同。
6.根据权利要求5所述的一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器，其特征在于：其中一个Si/SiO2衬底上SiO2的厚度为100nm，另一个Si/SiO2衬底上SiO2的厚度为285nm。
7.一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器的制备方法，其特征在于该方法的步骤包括：
(1)采用化学气相沉积的方法生长In2O3纳米线；
(2)将步骤(1)制备的In2O3纳米线物理转移到一Si/SiO2衬底上；
(3)利用电子束光刻技术、热蒸镀金属电极制备单根In2O3纳米线的背栅晶体管器件；
(4)采用机械剥离的方法在另一Si/SiO2衬底上制备WSe2的纳米薄片；
(5)将步骤(4)制备的WSe2的纳米薄片转移到步骤(3)制备的In2O3纳米线的背栅晶体管器件上，得到二硒化钨薄片/氧化铟纳米线复合结构。
8.根据权利要求7所述的一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器的制备方法，其特征在于：所述的步骤(2)中，Si/SiO2衬底上SiO2的厚度为100nm。
9.根据权利要求7所述的一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器的制备方法，其特征在于：所述的步骤(4)中，Si/SiO2衬底上SiO2的厚度为285nm。
10.根据权利要求7所述的一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器的制备方法，其特征在于：所述的步骤(5)中，将WSe2的纳米薄片转移到In2O3纳米线的背栅晶体管器件上的具体方法为：
首先在载玻片的下表面形成表面平滑的PDMS膜，将PVA膜贴附在PDMS膜的下表面上，载玻片安装在三维位移平台上，并通过显微镜将PVA膜对准机械剥离获得的WSe2薄片；通过三维位移平台将PVA膜逐渐靠近并接触WSe2薄片，同时对SiO2厚度为285nm的Si/SiO2衬底加热软化PVA膜，使得PVA膜与SiO2厚度为285nm的Si/SiO2衬底接触完全，从显微镜下观察两者接触完全后停止加热；将载玻片慢慢抬起使PVA膜与PDMS膜分离；将PVA膜从SiO2厚度为285nm的Si/SiO2衬底上慢慢剥离下来，同时WSe2薄片也附着在PVA膜上一同剥离下来；将载有WSe2薄片的PVA膜重新贴附到PDMS膜上，对准In2O3纳米线的背栅晶体管；通过三维位移平台将PVA膜逐渐靠近使得WSe2薄片接触In2O3纳米线，同时对SiO2厚度为100nm的Si/SiO2衬底加热软化PVA膜，使得PVA膜与SiO2厚度为100nm的Si/SiO2衬底接触完全，从显微镜下观察两者接触完全后停止加热；将载玻片慢慢抬起使PVA膜与PDMS膜分离；最后将SiO2厚度为100nm的Si/SiO2衬底放入去离子水中浸泡去掉PVA膜，吹干。
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