WO2021077837A1 - 基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法 - Google Patents

基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法 Download PDF

Info

Publication number
WO2021077837A1
WO2021077837A1 PCT/CN2020/105550 CN2020105550W WO2021077837A1 WO 2021077837 A1 WO2021077837 A1 WO 2021077837A1 CN 2020105550 W CN2020105550 W CN 2020105550W WO 2021077837 A1 WO2021077837 A1 WO 2021077837A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
layer
graphene
substrate
molybdenum disulfide
Prior art date
Application number
PCT/CN2020/105550
Other languages
English (en)
French (fr)
Inventor
张晗
高姗
王慧德
郭志男
Original Assignee
深圳大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳大学 filed Critical 深圳大学
Publication of WO2021077837A1 publication Critical patent/WO2021077837A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention requires the prior application of the application number 201911026283.6 with the title of “graphene/black phosphorus/molybdenum disulfide/graphene heterojunction-based fast photodetector and preparation method thereof” submitted on October 25, 2019 to be preferred Right, the content of the above-mentioned earlier application is incorporated into this text by way of introduction.
  • the invention relates to the field of photodetectors, in particular to a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction and a preparation method thereof.
  • a photodetector is a device that converts optical signals into electrical signals.
  • Photoelectric detectors have a wide range of uses, covering various fields of military and national economy. For example, they are mainly used for ray measurement and detection, industrial automatic control, photometric measurement, etc. in the visible and near-infrared bands.
  • Semiconductor photodetectors are widely used in the fields of optical fiber communication, infrared remote sensing, measurement and diagnosis instruments.
  • Conventional semiconductor photodetectors have problems such as low response, slow response time, and low detection sensitivity.
  • traditional photodetectors based on semiconductor materials such as silicon, gallium arsenide, indium gallium arsenide, etc. generally have problems such as narrow response bands and insufficient response sensitivity.
  • the response speed of the molybdenum disulfide photodetector is on the second level, which is increasingly unable to meet the needs of work.
  • the present invention provides a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction, by setting graphene/black phosphorus/molybdenum disulfide/graphene in the photodetector
  • the graphene heterojunction significantly improves the response speed of the photodetector, which is beneficial to its wide application.
  • the present invention provides a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction, including a substrate, a first electrode, a second electrode, a first graphene layer, a black A phosphorous film layer, a molybdenum disulfide layer, and a second graphene layer, the first electrode and the second electrode are spaced apart on one side surface of the substrate, and the first electrode and the second electrode A channel structure is formed, the first graphene layer, the black phosphorous film layer, the molybdenum disulfide layer, and the second graphene layer are sequentially stacked and arranged in the channel structure, and the first electrode And the second electrode are respectively in contact with the first graphene layer and the second graphene layer.
  • the device with this structure can effectively reduce the black phosphorus/molybdenum disulfide heterojunction directly in contact with the metal electrode
  • the potential barriers between the black phosphorus and molybdenum disulfide in the junction device and the metal electrode are beneficial to the rapid collection of carriers generated in the device.
  • the vertical heterojunction structure designed by the present invention greatly reduces the gap of the device.
  • Line width Channel length
  • its line width is the thickness of the black phosphorus/molybdenum disulfide heterojunction, with a single layer of black phosphorus (thickness ⁇ 0.5nm) and a single layer of molybdenum disulfide (thickness ⁇ 0.6 nm) as an example, the minimum line width of the device can reach 1.1 nm.
  • the line width determines the distance that the photogenerated carriers in the detector need to transmit before forming the photocurrent, that is, the response time. Therefore, the photoelectricity designed by the present invention
  • the response speed of the detector is very fast, and at the same time, the wide-band optical response characteristics of graphene are used to realize the wide-band response of the heterojunction device.
  • the response speed of the fast photodetector based on the graphene/black phosphorus/molybdenum disulfide/graphene heterojunction is in the order of microseconds, and can even reach the order of nanoseconds or picoseconds.
  • the substrate may be a flexible substrate or a rigid substrate.
  • the material of the substrate includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane.
  • the substrate is a flexible substrate.
  • the substrate may be a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate.
  • the size of the substrate is not limited, and the specific size can be selected according to actual needs.
  • the response speed of the photodetector is not less than microsecond level. Further, the response speed of the photodetector is not less than nanoseconds. Furthermore, the response speed of the photodetector is picosecond level.
  • the material of the first electrode and the second electrode includes at least one of gold, silver, platinum, copper, chromium, and titanium.
  • the materials of the first electrode and the second electrode may be the same or different, which is not limited.
  • the first electrode and the second electrode include a connection layer and a metal layer, and the connection layer is in contact with the substrate.
  • the material of the connection layer includes chromium and/or titanium
  • the material of the metal layer includes at least one of gold, silver, platinum and copper.
  • the connecting layer in addition to being used for conducting electricity, the connecting layer also has a certain connection function, so that the metal layer and the substrate are better adhered and connected, and the bonding force between the first electrode and the second electrode and the substrate is improved.
  • the first electrode and the second electrode are both formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate, and the thickness of the chromium layer is 5 nm-10 nm, The thickness of the gold layer is 20 nm-100 nm.
  • the thickness of the first electrode is 25nm-110nm
  • the thickness of the second electrode is 25nm-110nm
  • the distance between the first electrode and the second electrode is 1 ⁇ m-15 ⁇ m. That is, the size of the channel structure formed between the first electrode and the second electrode in the first direction is 1 ⁇ m-15 ⁇ m.
  • the first graphene layer is composed of a single layer of graphene or multiple layers of graphene
  • the black phosphorus thin film layer is composed of a single layer of black phosphorus or multiple layers of black phosphorus
  • the molybdenum disulfide layer It is composed of a single layer of molybdenum disulfide or multiple layers of molybdenum disulfide
  • the second graphene layer is composed of a single layer of graphene or multiple layers of graphene.
  • the thickness of the first graphene layer is 0.3nm-15nm
  • the thickness of the black phosphorous film layer is 0.5nm-20nm
  • the thickness of the molybdenum disulfide layer is 0.6nm-50nm
  • the thickness of the first graphene layer is between 0.6nm and 50nm.
  • the thickness of the two graphene layers is 0.3nm-15nm.
  • part of the first graphene layer is disposed on the surface of the first electrode, or the first graphene layer is disposed in the channel structure and is close to the first electrode and the second electrode One end of the contact connection. That is to say, when part of the first graphene layer is disposed on the surface of the first electrode, the part of the first graphene layer is directly disposed on the surface of the first electrode, that is, it is perpendicular to the surface of the first electrode.
  • the two are stacked and connected, or when the first graphene layer is arranged in the channel structure and is in contact with the end of the first electrode close to the second electrode, that is, in parallel
  • the first electrode and the first graphene layer are sequentially arranged and connected in contact.
  • part of the second graphene layer is provided on the surface of the second electrode, or the second graphene layer is provided in the channel structure and is close to the first electrode with the second electrode One end of the contact connection. That is to say, when part of the second graphene layer is disposed on the surface of the second electrode, the part of the second graphene layer is directly disposed on the surface of the second electrode, that is, it is perpendicular to the surface of the second electrode.
  • the two are stacked and connected, or when the second graphene layer is arranged in the channel structure and is in contact with the end of the second electrode close to the first electrode, that is, in parallel
  • the second electrode and the second graphene layer are sequentially arranged and connected in contact.
  • part of the first graphene layer is disposed on the surface of the first electrode, and part of the second graphene layer is disposed on the surface of the second electrode.
  • the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as that of the black phosphorous film layer on the substrate.
  • the area ratio of the orthographic projection is 1: (0.2-5).
  • the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as the molybdenum disulfide layer on the substrate.
  • the area ratio of the orthographic projection is 1: (0.2-5).
  • the overlapping area of the orthographic projection of the first graphene layer on the substrate and the orthographic projection of the second graphene layer on the substrate is the same as the black phosphorous film layer and the second graphene layer.
  • the orthographic projections of the molybdenum sulfide layer on the substrate completely overlap, which is beneficial to improve the rapid response.
  • the first graphene layer, the black phosphorous film layer, the molybdenum disulfide layer and the second graphene layer are connected by van der Waals force to form a van der Waals force heterojunction, so that the photoelectric
  • the overall structure of the detector is stable.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode and/or the second electrode, and is used in the first electrode and/or the surface of the second electrode.
  • the small cracks and cracks can be repaired to prevent the cracks and cracks from affecting the work of the photodetector, thereby realizing a self-repairing process and increasing the service life of the photodetector.
  • the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is disposed on a side surface of the electrode base close to the first electrode and/or the second electrode.
  • the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer , At least one of polyvinyl alcohol and its derivatives.
  • the fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction provided by the present invention can realize a wide-band light response, and the response speed of the photodetector has been significantly improved, and the response speed can reach micro Second level, high sensitivity, broaden its application range.
  • the present invention provides a method for preparing a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction, including:
  • a first graphene film, a black phosphorous film, a molybdenum disulfide film, and a second graphene film are sequentially stacked in the channel structure, and the first electrode and the second electrode are respectively connected to the first graphite
  • the ene film is in contact with the second graphene film to obtain a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction.
  • the first graphene film, the black phosphorus film, the molybdenum disulfide film, and the second graphene film may be prepared by a peeling method.
  • the preparation method further includes:
  • a self-healing material is coated on the surface of the first electrode and/or the second electrode to form a self-healing layer; an electrode material is deposited on the self-healing layer to form a self-healing electrode.
  • the preparation method of the fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction provided by the invention is simple and easy to operate, and can produce a fast response photodetector.
  • the invention provides a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction, by setting the graphene/black phosphorus/molybdenum disulfide/graphene heterojunction in the photodetector , To achieve a wide-band light response, and the response speed of the photodetector has been significantly improved, the response speed can reach the microsecond level, high sensitivity, and broaden its application range.
  • the invention also provides a method for preparing a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction, which is simple and easy to operate and can respond quickly.
  • FIG. 1 is a schematic structural diagram of a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention.
  • FIG. 2 is a flowchart of a method for manufacturing a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention.
  • FIG. 3 is a graph of the photoelectric response test result of the photodetector provided by Embodiment 1 of the present invention.
  • a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction including a substrate 10, a first electrode 20, and a second electrode 30 ,
  • the first graphene layer 40, the black phosphorous film layer 50, the molybdenum disulfide layer 60 and the second graphene layer 70, the first electrode 20 and the second electrode 30 are arranged on one side surface of the substrate 10 at intervals, the first electrode 20
  • a channel structure is formed between the second electrode 30 and the first graphene layer 40, the black phosphorous film layer 50, the molybdenum disulfide layer 60, and the second graphene layer 70 are sequentially stacked in the channel structure, and the first electrode 20
  • the and second electrodes 30 are in contact and connected with the first graphene layer 40 and the second graphene layer 70, respectively.
  • a graphene/black phosphorus/molybdenum disulfide/graphene heterojunction is set in the photodetector.
  • the device of this structure can effectively reduce the black phosphorus/molybdenum disulfide heterojunction directly in contact with the metal electrode.
  • the potential barriers between the black phosphorus and molybdenum disulfide in the device and the metal electrode are beneficial to the rapid collection of carriers generated in the device, which in turn makes the response speed of the photodetector significantly improved, and at the same time utilizes the wide-band light of graphene
  • the response characteristic realizes the wide-band response of the heterojunction device.
  • the response speed of the fast photodetector based on the graphene/black phosphorus/molybdenum disulfide/graphene heterojunction is on the order of microseconds.
  • the substrate 10 may be a flexible substrate or a rigid substrate.
  • the material of the substrate 10 includes at least one of polyethylene terephthalate, polyethylene naphthalate, and polydimethylsiloxane.
  • the substrate 10 It is a flexible substrate to improve the flexibility of the photodetector and further broaden the application range of the photodetector. It can be used but not limited to the field of flexible electronics.
  • the substrate 10 may be, but not limited to, a silicon substrate, a silicon dioxide substrate, or a polyethylene terephthalate substrate.
  • the size of the substrate 10 is not limited, and the specific size can be selected according to actual needs.
  • the thickness of the substrate 10 is 100 ⁇ m-1000 ⁇ m. Further, the thickness of the substrate 10 is 300 ⁇ m-800 ⁇ m.
  • the material of the first electrode 20 and the second electrode 30 includes at least one of gold, silver, platinum, copper, chromium and titanium.
  • the materials of the first electrode 20 and the second electrode 30 may be the same or different, which is not limited.
  • the first electrode 20 and the second electrode 30 include a connection layer and a metal layer, and the connection layer is in contact with the substrate 10.
  • the material of the connection layer includes chromium and/or titanium
  • the material of the metal layer includes at least one of gold, silver, platinum and copper.
  • connection layer in addition to being used for conducting electricity, the connection layer also plays a role in connection, so that the metal layer and the substrate 10 are better adhered and connected, and the bonding force between the first electrode 20 and the second electrode 30 and the substrate 10 is improved.
  • the thickness of the connection layer is 5 nm-10 nm, and the thickness of the metal layer is 20 nm-100 nm. Further, the thickness of the connection layer is 7nm-9nm, and the thickness of the metal layer is 23nm-80nm.
  • both the first electrode 20 and the second electrode 30 are formed by stacking a chromium layer and a gold layer, the chromium layer is in contact with the substrate 10, the thickness of the chromium layer is 5nm-10nm, and the thickness of the gold layer is 20nm -100nm.
  • the thickness of the first electrode 20 is 25 nm-110 nm, and the thickness of the second electrode 30 is 25 nm-110 nm. Further, the thickness of the first electrode 20 is 30 nm-80 nm, and the thickness of the second electrode 30 is 30 nm-80 nm.
  • the distance between the first electrode 20 and the second electrode 30 is 1 ⁇ m-15 ⁇ m. That is, the size of the channel structure formed between the first electrode 20 and the second electrode 30 in the first direction is 1 ⁇ m-15 ⁇ m.
  • the first electrode 20 and the second electrode 30 are in contact and connected with the first graphene layer 40 and the second graphene layer 70, respectively, and the first electrode and the second electrode can be used as source and drain electrodes.
  • the first graphene layer 40 is composed of a single layer of graphene or multiple layers of graphene
  • the black phosphorus film layer 50 is composed of a single layer of black phosphorus or multiple layers of black phosphorus
  • the molybdenum disulfide layer 60 is composed of a single layer of graphene.
  • the second graphene layer 70 is composed of molybdenum disulfide or multiple layers of molybdenum disulfide
  • the second graphene layer 70 is composed of a single layer of graphene or multiple layers of graphene.
  • the thickness of the first graphene layer 40 is 0.3nm-15nm
  • the thickness of the black phosphorous film layer 50 is 0.5nm-20nm
  • the thickness of the molybdenum disulfide layer 60 is 0.6nm-50nm
  • the thickness of the second graphene layer 40 The thickness of the graphene layer 70 is 0.3 nm-15 nm, which improves the response speed of the photodetector.
  • the thickness of the first graphene layer 40 is 0.3nm-10nm
  • the thickness of the black phosphorous film layer 50 is 0.5nm-15nm
  • the thickness of the molybdenum disulfide layer 60 is 0.6nm-25nm
  • the thickness of the second graphene layer 70 The thickness is 0.3nm-10nm, which further improves the response speed of the photodetector.
  • the thickness of the first graphene layer 40 is less than 1.5 nm
  • the thickness of the black phosphorous film layer 50 is less than 2 nm
  • the thickness of the molybdenum disulfide layer 60 is less than 1.5 nm
  • the thickness of the second graphene layer 70 is less than At 1.5 nm, the response speed of the photodetector can reach the level of picoseconds.
  • the thickness of the first graphene layer 40 is 0.3 nm
  • the thickness of the black phosphorus film layer 50 is 0.5 nm
  • the thickness of the molybdenum disulfide layer 60 is 0.6 nm
  • the thickness of the second graphene layer 70 is When it is 0.3nm, the response speed of the photodetector reaches picosecond level.
  • the first graphene layer 40, the black phosphorous film layer 50, the molybdenum disulfide layer 60, and the second graphene layer 70 are sequentially stacked in the channel structure, and the first electrode 20 and the second electrode 30 are respectively connected to the channel structure.
  • the first graphene layer 40 and the second graphene layer 70 are in contact and connected.
  • the first electrode 20 is in contact and connection with the first graphene layer 40, and is not in direct contact and connection with the molybdenum disulfide layer 60 and the second graphene layer 70
  • the second electrode 30 is in contact with the second graphene layer.
  • the layer 70 is in contact and connected with the first graphene layer 40 and the molybdenum disulfide layer 60 without direct contact, so as to realize fast response photoelectric detection.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, or the first graphene layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30 connection. That is, when part of the first graphene layer 40 is disposed on the surface of the first electrode 20, the part of the first graphene layer 40 is directly disposed on the surface of the first electrode 20, that is, in a direction perpendicular to the surface of the substrate 10 , The two are stacked and connected, or when the first graphene layer 40 is arranged in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, that is, in a direction parallel to the surface of the substrate 10, the first graphene layer 40 The electrodes 20 and the first graphene layer 40 are arranged in sequence and connected in contact.
  • part of the second graphene layer 70 is disposed on the surface of the second electrode 30, or the second graphene layer 70 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20 connection. That is, when part of the second graphene layer 70 is disposed on the surface of the second electrode 30, the part of the second graphene layer 70 is directly disposed on the surface of the second electrode 30, that is, in a direction perpendicular to the surface of the substrate 10 , The two are stacked and connected, or when the second graphene layer 70 is arranged in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, that is, in the direction parallel to the surface of the substrate 10, the second graphene layer 70 The electrodes 30 and the second graphene layer 70 are arranged in sequence and connected in contact.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, and part of the second graphene layer 70 is disposed on the surface of the second electrode 30.
  • the first graphene layer The contact area between 40 and the surface of the first electrode 20 is large, and the contact area between the second graphene layer 70 and the surface of the second electrode 30 is large, which is more conducive to improving the responsiveness of the photodetector.
  • the total thickness of the first electrode 20, the first graphene layer 40, the black phosphorous film layer 50 and the molybdenum disulfide layer 60 is equal to the thickness of the second electrode 30 layer, thereby improving the stability of the overall structure.
  • the orthographic projection of the first graphene layer 40 on the surface of the first electrode 20 accounts for 10%-40% of the surface area of the first electrode 20
  • the orthographic projection of the second graphene layer 70 on the surface of the second electrode 30 accounts for the first 10%-40% of the surface area of the second electrode 30 further improves the rapid response of the photodetector.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20, part of the first graphene layer 40 is in contact with the substrate 10, and part of the second graphene layer 70 is disposed on the surface of the second electrode 30. At this time, the surface of the first graphene layer 40 is not parallel to the surface of the substrate 10 and is arranged obliquely.
  • the thickness of the first electrode 20 is on the order of nanometers.
  • the length of the first graphene layer 40 is on the order of micrometers.
  • the degree of tilt can be ignored.
  • part of the first graphene layer 40 is disposed on the surface of the first electrode 20
  • part of the second graphene layer 70 is disposed on the surface of the second electrode 30, and part of the second graphene layer 70 is in contact with the substrate 10. .
  • the surface of the second graphene layer 70 is not parallel to the surface of the substrate 10 and is arranged obliquely
  • the thickness of the second electrode 30 is nanometers
  • the length of the second graphene layer 70 is micrometers
  • the length of the second graphene layer 70 The degree of tilt can be ignored.
  • the first graphene layer 40 when the first graphene layer 40 is disposed in the channel structure and is in contact with the end of the first electrode 20 close to the second electrode 30, the first graphene layer 40 and the black phosphorous film layer
  • the total thickness of 50 and the molybdenum disulfide layer 60 is equal to the thickness of the second electrode 30 layer, and part of the second graphene layer 70 is disposed on the surface of the second electrode 30, thereby improving the stability of the overall structure.
  • the black phosphorous film layer 50 and the second graphene layer when the second graphene layer 70 is disposed in the channel structure and is in contact with the end of the second electrode 30 close to the first electrode 20, the black phosphorous film layer 50 and the second graphene layer
  • the total thickness of 70 and the molybdenum disulfide layer 60 is equal to the thickness of the first electrode 20 layer, and part of the first graphene layer 40 is disposed on the surface of the first electrode 20, thereby improving the stability of the overall structure.
  • the first graphene layer 40, the black phosphorous film layer 50, the molybdenum disulfide layer 60, and the second graphene layer 70 are sequentially stacked in the channel structure, including the first graphene layer 40, the black phosphorous film
  • the layer 50, the molybdenum disulfide layer 60, and the second graphene layer 70 are sequentially stacked and arranged in the channel structure, wherein the first graphene layer 40 is larger than the black phosphorus film layer 50, the molybdenum disulfide layer 60, and the second graphene layer.
  • the layer 70 is closer to the substrate 10, or the second graphene layer 70 is closer to the substrate 10 than the first graphene layer 40, the black phosphorus film layer 50, and the molybdenum disulfide layer 60.
  • the overlapping area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 is the same as the black phosphorous film layer 50 on the substrate 10.
  • the ratio of the orthographic projection area is 1: (0.2-5).
  • the graphene/molybdenum disulfide/graphene heterojunction can be better made to work, realizing fast light response detection.
  • the ratio of the overlapping area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 to the orthographic projection area of the black phosphor film layer 50 on the substrate 10 is 1: (1-3).
  • the overlap area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 is compared with the area of the orthographic projection of the black phosphor film layer 50 on the substrate 10 It is 1:(1-1.5), which is more conducive to photodetection, while reducing dark current and saving graphene materials.
  • the overlapping area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 is the same as the black phosphorous film layer 50 on the substrate 10.
  • the ratio of the orthographic projection area is 1:1.
  • the overlapping area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 is the same as the area where the molybdenum disulfide layer 60 is on the substrate 10
  • the ratio of the orthographic projection area is 1: (0.2-5).
  • the ratio of the overlap area between the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 to the area of the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 is 1: (1-3). Furthermore, the overlapping area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 is compared with the area of the orthographic projection of the molybdenum disulfide layer 60 on the substrate 10 It is 1:(1-1.5), which is more conducive to photodetection, while reducing dark current and saving graphene materials.
  • the overlapping area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 is the same as the molybdenum disulfide layer 60 on the substrate 10
  • the ratio of the orthographic projection area is 1:1.
  • the overlapping area of the orthographic projection of the first graphene layer 40 on the substrate 10 and the orthographic projection of the second graphene layer 70 on the substrate 10 is the same as the black phosphorous film layer 50 and the molybdenum disulfide layer.
  • the orthographic projection of 60 on the substrate 10 is completely overlapped, which improves fast response.
  • the first graphene layer 40, the black phosphor film layer 50, the molybdenum disulfide layer 60, and the second graphene layer 70 are connected by van der Waals force to form a van der Waals force heterojunction, so that the overall structure of the photodetector stable.
  • the channel structure includes the area between the first electrode 10 and the second electrode 20, and also includes the space above the area. That is to say, the first graphene layer 40, the black phosphorous film layer 50, the molybdenum disulfide layer 60, and the second graphene layer 70 may be stacked in the area between the first electrode 10 and the second electrode 20, or may be provided Above the area between the first electrode 10 and the second electrode 20. In an embodiment of the present invention, the first graphene layer 40, the black phosphorous film layer 50, the molybdenum disulfide layer 60, and the second graphene layer 70 are stacked in the area between the first electrode 10 and the second electrode 20.
  • the photodetector further includes a self-healing electrode, and the self-healing electrode is arranged on the surface of the first electrode 20 and/or the second electrode 30.
  • the self-healing electrode is arranged on the surface of the first electrode 20 and/or the second electrode 30, and is used to prevent the occurrence of small cracks and cracks in the first electrode 20 and/or the second electrode 30. , The cracks are repaired to avoid the occurrence of cracks and cracks from affecting the work of the photoelectric detector, thereby realizing the self-repairing process, and improving the service life of the photoelectric detector.
  • the self-healing electrode includes an electrode base and a self-healing layer, and the self-healing layer is arranged on a side surface of the electrode base close to the first electrode and/or the second electrode.
  • a self-healing layer is provided on one surface of the electrode substrate.
  • a self-repairing layer is provided on a surface portion of the electrode substrate.
  • the orthographic projection of the self-healing layer on the surface of the electrode substrate accounts for 20%-70% of the surface area of the electrode substrate.
  • the material of the self-healing layer includes polyurethane, epoxy resin, ethylene-vinyl acetate copolymer, polyimide, polycaprolactone, polylactic acid, polyglycolic acid, polylactic acid-glycolic acid copolymer, poly At least one of vinyl alcohol and its derivatives.
  • the material of the self-healing layer may be, but is not limited to, long-chain carbonylation modified polyurethane.
  • the material of the electrode substrate includes at least one of gold, silver, platinum, copper, chromium and titanium.
  • the electrode base includes an electrode connection layer and an electrode metal layer, and the electrode connection layer is in contact with the self-healing layer.
  • the material of the electrode connection layer includes chromium and/or titanium, and the material of the electrode metal layer includes at least one of gold, silver, platinum and copper.
  • the electrode connection layer not only serves for conduction, but also has a certain connection function, so that the electrode metal layer and the self-healing layer are better adhered and connected, and the bonding force between the electrode substrate and the self-healing layer is improved.
  • the electrode substrate is formed by stacking a chromium layer and a gold layer.
  • FIG. 2 is a flowchart of a method for manufacturing a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction according to an embodiment of the present invention, including:
  • S110 Provide a substrate, deposit electrode material on one side surface of the substrate to form a first electrode and a second electrode spaced apart, wherein a channel structure is formed between the first electrode and the second electrode.
  • the electrode material includes at least one of gold, silver, platinum, copper, chromium, and titanium.
  • the materials of the first electrode and the second electrode may be the same or different, which is not limited.
  • the electrode material is deposited by evaporation, sputtering or ion plating.
  • the substrate is pasted on a precision silicon-based mask with electrode patterns, and then placed in an electron beam evaporator to evaporate electrode materials to obtain a substrate with blank electrode patterns. The selection of the substrate, the first electrode and the second electrode are as described above, and will not be repeated here.
  • a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction includes a substrate, a first electrode, a second electrode, a first graphene layer, a black phosphorus film layer, and molybdenum disulfide Layer and the second graphene layer, the first electrode and the second electrode are arranged on one side surface of the substrate at intervals, a channel structure is formed between the first electrode and the second electrode, the first graphene layer, the black phosphorus film layer, the second The molybdenum sulfide layer and the second graphene layer are sequentially stacked and arranged in the channel structure, and the first electrode and the second electrode are respectively in contact with the first graphene layer and the second graphene layer.
  • the first graphene film, the black phosphorus film, the molybdenum disulfide film and the second graphene film correspond to the first graphene layer, the black phosphorus film layer, the molybdenum disulfide layer and the second graphene layer in sequence.
  • the selection of the olefin layer, the black phosphorous film layer, the molybdenum disulfide layer and the second graphene layer is as described above, and will not be repeated here.
  • the first graphene film, the black phosphorous film, the molybdenum disulfide film, and the second graphene film may be prepared by a lift-off method, but are not limited to.
  • the preparation method further includes: coating a self-healing material on the surface of the first electrode and/or the second electrode to form a self-healing layer; depositing electrode material on the self-healing layer to form a self-healing electrode .
  • the preparation process may be performed after forming the first electrode and the second electrode, or after forming at least one of the first graphene layer, the molybdenum disulfide layer, and the second graphene layer, which is not limited.
  • the fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction solveds the problem by setting graphene/black phosphorus/molybdenum disulfide/graphene heterojunction in the photodetector
  • the problem of the slow response speed of the existing photodetector realizes a wide-band light response, and the response speed of the photodetector is significantly improved, the response speed can reach the microsecond level, the sensitivity is high, and its application range is broadened.
  • the preparation method of the fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction provided by the present invention is simple and easy to operate, and can realize a fast response photodetector.
  • the polyethylene terephthalate (PET) substrate was cut into 1 ⁇ 1cm 2 size, the silicon-based mask with the electrode shape was fixed on the PET substrate, and the chromium layer was successively evaporated by the method of thermal evaporation And the gold layer, where the thickness of the chromium layer is 5nm, the thickness of the gold layer is 40nm, and finally the PET substrate is taken out to obtain a flexible PET substrate with the first electrode and the second electrode arranged at intervals, the first electrode and the second electrode The thickness is 45nm, and a channel structure is formed between the first electrode and the second electrode.
  • PET polyethylene terephthalate
  • the graphene was peeled off using scotch tape and pasted on the PDMS film, and then the graphene film was transferred to a flexible PET substrate on a two-dimensional material fixed-point transfer platform.
  • the thickness of the graphene film was 10nm.
  • the thickness of the black phosphorus film is 10nm
  • the thickness of the molybdenum disulfide film is 25nm
  • the thin film, the molybdenum disulfide thin film and the second graphene thin film are sequentially stacked in the channel structure to obtain a graphene/black phosphorus/molybdenum disulfide/graphene heterojunction.
  • Part of the first graphene thin film is placed on the surface of the first electrode
  • Part of the second graphene film is set on the surface of the second electrode, that is, a fast photodetector based on graphene/black phosphorus/molybdenum disulfide/graphene heterojunction is prepared.
  • the alkyl base is taken out to obtain a polydimethylsiloxane substrate with a first electrode and a second electrode spaced apart.
  • the thickness of the first electrode and the second electrode is 60nm, and a groove is formed between the first electrode and the second electrode. Tao structure.
  • the thickness of the first graphene film is 8nm and the thickness of the black phosphorous film is 13nm .
  • the thickness of the molybdenum disulfide film is 20nm
  • the thickness of the second graphene film is 12nm
  • the first graphene film, the black phosphorous film, the molybdenum disulfide film, and the second graphene film are sequentially stacked in the channel structure to obtain Graphene/black phosphorus/molybdenum disulfide/graphene heterojunction
  • the first electrode and the second electrode are in contact with the first graphene film and the second graphene film, respectively, which is based on graphene/black phosphorus/two Fast photodetector for molybdenum sulfide/graphene heterojunction.
  • the photodetector prepared in Example 1 was placed on the probe platform matched with the semiconductor characteristic analyzer, and the accurate position of the device on the flexible substrate was found through the matched CCD imaging system.
  • the two probes matched with the probe station are selected to respectively contact the first electrode and the second electrode of the device.
  • Open the semiconductor characteristic analyzer test software which is set as the drain probe to select the voltage bias mode, the fixed bias is 1V, and the other metal probe is the source, and the voltage is set to 0V.
  • the fast photodetector based on the graphene/black phosphorus/molybdenum disulfide/graphene heterojunction provided by the present invention can significantly improve the response speed of the photodetector and realize a microsecond response.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)

Abstract

一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器，包括基底（10）、第一电极（20）、第二电极（30）、第一石墨烯层（40）、黑磷薄膜层（50）、二硫化钼层（60）和第二石墨烯层（70），第一电极（20）和第二电极（30）间隔设置在基底（10）的一侧表面，第一电极（20）和第二电极（30）之间形成沟道结构，第一石墨烯层（40）、黑磷薄膜层（50）、二硫化钼层（60）和第二石墨烯层（70）依次层叠设置在沟道结构内，第一电极（20）和第二电极（30）分别与第一石墨烯层（40）和第二石墨烯层（70）接触连接。光电探测器中设置有石墨烯/黑磷/二硫化钼/石墨烯异质结，可以实现宽波段响应，并且光电探测器的响应速度得到了显著提高，响应速度可以达到微秒级，有利于光电探测器的广泛应用。

Description

基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法
本发明要求2019年10月25日递交的发明名称为“基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法”的申请号201911026283.6的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及光探测器领域，具体涉及一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法。
背景技术
光电探测器是将光信号转换成电信号的装置。光电探测器用途广泛，涵盖军事和国民经济的各个领域，如在可见光和近红外波段主要用于射线测量和探测、工业自动控制、光度计量等。半导体光电探测器在光纤通信、红外遥感、测量和诊断仪器等领域广泛运用。常规的半导体光电探测器存在响应度低、响应时间慢、探测灵敏度低等问题。例如，基于硅，砷化镓，铟镓砷等半导体材料的传统光电探测器普遍存在响应波段窄，响应灵敏度不够高等问题。又如，二硫化钼光电探测器的响应速度为秒级，越来越无法满足工作需要。
因此，进一步开发具有快速光响应的光电探测器对其发展具有重要意义。
发明内容
为解决上述问题，本发明提供了一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器，通过在光电探测器中设置石墨烯/黑磷/二硫化钼/石墨烯异质结，显著提高光电探测器的响应速度，有利于其广泛应用。
第一方面，本发明提供了一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器，包括基底、第一电极、第二电极、第一石墨烯层、黑磷薄膜层、二硫化钼层和第二石墨烯层，所述第一电极和所述第二电极间隔设置在所述基底的一侧表面，所述第一电极和所述第二电极之间形成沟道结构，所述第一石墨烯层、所述黑磷薄膜层、所述二硫化钼层和所述第二石墨烯层依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯层和所述第二石墨烯层接触连接。
在本发明中，通过在光电探测器中设置石墨烯/黑磷/二硫化钼/石墨烯异质结，这种结构的器件能有效降低直接与金属电极接触的黑磷/二硫化钼异质结器件中黑磷、二硫化钼分别与金属电极之间存在的势垒，有利于器件中产生载流子的快速收集，同时本发明设计的垂直异质结结构极大地减小了器件的沟道长度(即“线宽”)，它的线宽为黑磷/二硫化钼异质结的厚度，以单层黑磷(厚度为～0.5nm)和单层二硫化钼(厚度为～0.6nm)为例，器件的线宽最小可以达到1.1nm，线宽的大小决定了探测器中光生载流子在形成光电流之前需要传输的距离，即决定了响应时间，因此本发明设计的光电探测器的响应速度非常快， 同时利用石墨烯的宽波段光响应特性实现该异质结器件的宽波段响应。在本发明中，基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的响应速度为微秒级，甚至可以达到纳秒级或皮秒级。
在本发明中，所述基底可以为柔性基底，也可以为硬质基底。可选的，所述基底的材质包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚二甲基硅氧烷中的至少一种，此时，基底为柔性基底，提高光电探测器的柔性，进一步拓宽光电探测器的应用范围，可以但不限于用于柔性电子领域等。具体的，可以但不限于为所述基底为硅基底、二氧化硅基底、聚对苯二甲酸乙二醇酯基底。在本发明中，对所述基底的尺寸不作限定，具体的可以根据实际需要进行选择。
在本发明中，所述光电探测器的响应速度不小于微秒级。进一步的，所述光电探测器的响应速度不小于纳秒级。更进一步的，所述光电探测器的响应速度为皮秒级。
可选的，所述第一电极和所述第二电极的材质包括金、银、铂、铜、铬和钛中的至少一种。在本发明中，所述第一电极和所述第二电极的材质可以相同，也可以不同，对此不作限定。
进一步的，所述第一电极和所述第二电极包括连接层和金属层，所述连接层与所述基底接触。更进一步的，所述连接层的材质包括铬和/或钛，所述金属层的材质包括金、银、铂和铜中的至少一种。在本发明中，连接层除了用于导电，还起到一定的连接作用，使得金属层与基底更好的粘附和连接，提高第一电极和第二电极与基底的结合力。具体的，可以但不限于为所述第一电极和所述第二电极均为铬层和金层层叠形成，所述铬层与所述基底接触，所述铬层的厚度为5nm-10nm，所述金层的厚度为20nm-100nm。
可选的，所述第一电极的厚度为25nm-110nm，所述第二电极的厚度为25nm-110nm。
可选的，所述第一电极和所述第二电极的间距为1μm-15μm。也就是说，所述第一电极和所述第二电极之间形成沟道结构在第一方向上的尺寸为1μm-15μm。
在本发明中，所述第一石墨烯层由单层石墨烯组成或多层石墨烯组成，所述黑磷薄膜层由单层黑磷组成或多层黑磷组成，所述二硫化钼层由单层二硫化钼组成或多层二硫化钼组成，所述第二石墨烯层由单层石墨烯组成或多层石墨烯组成。
可选的，所述第一石墨烯层的厚度为0.3nm-15nm，所述黑磷薄膜层的厚度为0.5nm-20nm，所述二硫化钼层的厚度为0.6nm-50nm，所述第二石墨烯层的厚度为0.3nm-15nm。
可选的，部分所述第一石墨烯层设置在所述第一电极表面，或所述第一石墨烯层设置在所述沟道结构内并与所述第一电极靠近所述第二电极的一端接触连接。也就是说，当部分所述第一石墨烯层设置在所述第一电极表面时，所述第一石墨烯层的部分是直接设置在所述第一电极的表面，即在垂直于所述基底表面的方向上，两者层叠连接，或当所述第一石墨烯层设置在所述沟道结构内并与所述第一电极靠近所述第二电极的一端接触连接时，即在平行于所述基底表面的方向上，所述第一电极和所述第一石墨烯层依次排布并接触连接。
可选的，部分所述第二石墨烯层设置在所述第二电极表面，或所述第二石墨烯层设置在所述沟道结构内并与所述第二电极靠近所述第一电极的一端接触连接。也就是说，当部分所述第二石墨烯层设置在所述第二电极表面时，所述第二石墨烯层的部分是直接设置在所述第二电极的表面，即在垂直于所述基底表面的方向上，两者层叠连接，或当所述第二石墨烯层设置在所述沟道结构内并与所述第二电极靠近所述第一电极的一端接触连接时，即在平行于所述基底表面的方向上，所述第二电极和所述第二石墨烯层依次排布并接触连接。
进一步的，部分所述第一石墨烯层设置在所述第一电极表面，部分所述第二石墨烯层设置在所述第二电极表面。
可选的，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述黑磷薄膜层在所述基底上的正投影面积比为1：(0.2-5)。此时可以更好地使石墨烯/黑磷/二硫化钼/石墨烯异质结发挥作用，提高光电探测器的响应速度。
可选的，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述二硫化钼层在所述基底上的正投影面积比为1：(0.2-5)。此时可以更好地使石墨烯/黑磷/二硫化钼/石墨烯异质结发挥作用，提高光电探测器的响应速度。
可选的，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述黑磷薄膜层和所述二硫化钼层在所述基底上的正投影完全重叠，有利于提高快速响应。
在本发明中，所述第一石墨烯层、所述黑磷薄膜层、所述二硫化钼层和所述第二石墨烯层之间通过范德华力连接，形成范德华力异质结，使得光电探测器整体结构稳定。
可选的，所述光电探测器还包括自修复电极，所述自修复电极设置在所述第一电极和/或所述第二电极的表面。
在本发明中，光电探测器还包括自修复电极，所述自修复电极设置在所述第一电极和/或所述第二电极的表面，用于在所述第一电极和/或所述第二电极出现细小裂痕、裂缝时，可以对出现细小裂痕、裂缝进行修复，避免出现的裂痕、裂缝对光电探测器的工作产生影响，进而实现自修复过程，提高了光电探测器的使用寿命。
进一步的，所述自修复电极包括电极基体和自修复层，所述自修复层设置在所述电极基体靠近所述第一电极和/或所述第二电极的一侧表面。
更进一步的，所述自修复层的材质包括聚氨酯、环氧树脂、乙烯-醋酸乙烯酯共聚物、聚酰亚胺、聚己内酯、聚乳酸、聚乙醇酸、聚乳酸-羟基乙酸共聚物、聚乙烯醇及其衍生物中的至少一种。
本发明提供的基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器能够实现宽波段的光响应，并且光电探测器的响应速度得到了显著提高，响应速度可以达到微秒级，灵敏度高，拓宽其应用范围。
第二方面，本发明提供了一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的制备方法，包括：
提供基底，在所述基底一侧表面沉积电极材料，形成间隔设置的第一电极和第二电极，其中，所述第一电极和所述第二电极之间形成沟道结构；
将第一石墨烯薄膜、黑磷薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯薄膜和所述第二石墨烯薄膜接触连接，得到基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器。
在本发明中，可以但不限于为所述第一石墨烯薄膜、所述黑磷薄膜和所述二硫化钼薄膜和所述第二石墨烯薄膜通过剥离法制备得到。
可选的，所述制备方法还包括：
将自修复材料涂覆在所述第一电极和/或所述第二电极的表面，形成自修复层；在所述自修复层上沉积电极材料，形成自修复电极。
本发明提供的基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的制备方法简单易操作，可以制得快速响应的光电探测器。
本发明的有益效果：
本发明提供了一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器，通过在光电探测器中设置石墨烯/黑磷/二硫化钼/石墨烯异质结，实现宽波段的光响应，并且光电探测器的响应速度得到了显著提高，响应速度可以达到微秒级，灵敏度高，拓宽其应用范围。本发明还提供了一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的制备方法，该方法简单易操作，可以快速响应的光电探测器。
附图说明
图1为本发明一实施例提供的一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的结构示意图。
图2为本发明一实施例提供的一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的制备方法流程图。
图3为本发明实施例1提供的光电探测器的光电响应测试结果图。
具体实施方式
以下所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。
请参照图1，为本发明一实施例提供了一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器，包括基底10、第一电极20、第二电极30、第一石墨烯层40、黑磷薄膜层50、二硫化钼层60和第二石墨烯层70，第一电极20和第二电极30间隔设置在基底10的一侧表面，第一电极20和第二电极30之间形成沟道结构，第一石墨烯层40、黑磷薄膜层50、二硫化钼层60和第二石墨烯层70依次层叠设置在沟道结构内，第一电极20和 第二电极30分别与第一石墨烯层40和第二石墨烯层70接触连接。
在本发明中，在光电探测器中设置石墨烯/黑磷/二硫化钼/石墨烯异质结，这种结构的器件能有效降低直接与金属电极接触的黑磷/二硫化钼异质结器件中黑磷、二硫化钼分别与金属电极之间存在的势垒，有利于器件中产生载流子的快速收集，进而使得光电探测器的响应速度显著提高，同时利用石墨烯的宽波段光响应特性实现该异质结器件的宽波段响应。在本发明中，基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的响应速度为微秒级。
在本发明中，基底10可以为柔性基底，也可以为硬质基底。在本发明一实施方式中，基底10的材质包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚二甲基硅氧烷中的至少一种，此时，基底10为柔性基底，提高光电探测器的柔性，进一步拓宽光电探测器的应用范围，可以但不限于用于柔性电子领域等。具体的，可以但不限于为基底10为硅基底、二氧化硅基底、聚对苯二甲酸乙二醇酯基底。在本发明中，对基底10的尺寸不作限定，具体的可以根据实际需要进行选择。可选的，基底10的厚度为100μm-1000μm。进一步的，基底10的厚度为300μm-800μm。
在本发明一实施方式中，第一电极20和第二电极30的材质包括金、银、铂、铜、铬和钛中的至少一种。在本发明中，第一电极20和第二电极30的材质可以相同，也可以不同，对此不作限定。进一步的，第一电极20和第二电极30包括连接层和金属层，连接层与基底10接触。更进一步的，连接层的材质包括铬和/或钛，金属层的材质包括金、银、铂和铜中的至少一种。在本发明中，连接层除了用于导电，还起到一定的连接作用，使得金属层与基底10更好的粘附和连接，提高第一电极20和第二电极30与基底10的结合力。可选的，连接层的厚度为5nm-10nm，金属层的厚度为20nm-100nm。进一步的，连接层的厚度为7nm-9nm，金属层的厚度为23nm-80nm。在本发明一具体实施例中，第一电极20和第二电极30均为铬层和金层层叠形成，铬层与基底10接触，铬层的厚度为5nm-10nm，金层的厚度为20nm-100nm。
在本发明一实施方式中，第一电极20的厚度为25nm-110nm，第二电极30的厚度为25nm-110nm。进一步的，第一电极20的厚度为30nm-80nm，第二电极30的厚度为30nm-80nm。
在本发明一实施方式中，第一电极20和第二电极30的间距为1μm-15μm。也就是说，第一电极20和第二电极30之间形成沟道结构在第一方向上的尺寸为1μm-15μm。
在本发明中，第一电极20和第二电极30分别与第一石墨烯层40和第二石墨烯层70接触连接，第一电极和第二电极可以作为源漏极。
在本发明中，第一石墨烯层40由单层石墨烯组成或多层石墨烯组成，黑磷薄膜层50由单层黑磷组成或多层黑磷组成，二硫化钼层60由单层二硫化钼组成或多层二硫化钼组成，第二石墨烯层70由单层石墨烯组成或多层石墨烯组成。
在本发明一实施方式中，第一石墨烯层40的厚度为0.3nm-15nm，黑磷薄膜层50的厚度为0.5nm-20nm，二硫化钼层60的厚度为0.6nm-50nm，第二石墨烯层70的厚度为 0.3nm-15nm，提高光电探测器的响应速度。进一步的，第一石墨烯层40的厚度为0.3nm-10nm，黑磷薄膜层50的厚度为0.5nm-15nm，二硫化钼层60的厚度为0.6nm-25nm，第二石墨烯层70的厚度为0.3nm-10nm，进一步提高光电探测器的响应速度。
在本发明一实施例中，第一石墨烯层40的厚度小于1.5nm，黑磷薄膜层50的厚度小于2nm，二硫化钼层60的厚度小于1.5nm，第二石墨烯层70的厚度小于1.5nm时，所述光电探测器的响应速度可达皮秒级。具体的，可以但不限于为第一石墨烯层40的厚度为0.3nm，黑磷薄膜层50的厚度为0.5nm，二硫化钼层60的厚度为0.6nm，第二石墨烯层70的厚度为0.3nm时，所述光电探测器的响应速度达皮秒级。
在本发明中，第一石墨烯层40、黑磷薄膜层50、二硫化钼层60和第二石墨烯层70依次层叠设置在沟道结构内，第一电极20和第二电极30分别与第一石墨烯层40和第二石墨烯层70接触连接。在本发明一具体实施例中，第一电极20与第一石墨烯层40接触连接，与二硫化钼层60和第二石墨烯层70不直接接触连接，第二电极30与第二石墨烯层70接触连接，与第一石墨烯层40和二硫化钼层60不直接接触连接，实现快速响应的光电探测。
在本发明一实施方式中，部分第一石墨烯层40设置在第一电极20表面，或第一石墨烯层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接。也就是说，当部分第一石墨烯层40设置在第一电极20表面时，第一石墨烯层40的部分是直接设置在第一电极20的表面，即在垂直于基底10表面的方向上，两者层叠连接，或当第一石墨烯层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接时，即在平行于基底10表面的方向上，第一电极20和第一石墨烯层40依次排布并接触连接。
在本发明一实施方式中，部分第二石墨烯层70设置在第二电极30表面，或第二石墨烯层70设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接。也就是说，当部分第二石墨烯层70设置在第二电极30表面时，第二石墨烯层70的部分是直接设置在第二电极30的表面，即在垂直于基底10表面的方向上，两者层叠连接，或当第二石墨烯层70设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接时，即在平行于基底10表面的方向上，第二电极30和第二石墨烯层70依次排布并接触连接。
在本发明一具体实施例中，如图1所示，部分第一石墨烯层40设置在第一电极20表面，部分第二石墨烯层70设置在第二电极30表面，第一石墨烯层40与第一电极20表面的接触面积大，第二石墨烯层70与第二电极30表面的接触面积大，更有利于提高光电探测器的响应性。可选的，第一电极20、第一石墨烯层40、黑磷薄膜层50和二硫化钼层60的总厚度等于第二电极30层的厚度，进而提高整体结构的稳定性。可选的，第一石墨烯层40在第一电极20表面的正投影占第一电极20表面面积的10％-40％，第二石墨烯层70在第二电极30表面的正投影占第二电极30表面面积的10％-40％，进一步提高光电探测器的快速响应。在本发明一实施例中，部分第一石墨烯层40设置在第一电极20表面，部分第一石墨烯层40与基底10接触，部分第二石墨烯层70设置在第二电极30表面。此时，第一石墨烯层40表面与基底10表面不平行，为倾斜设置，第一电极20的厚度为纳米级，第一石墨烯层40的长度为微米级，第一石墨烯层40的倾斜程度可以忽略。在本发明另一实 施例中，部分第一石墨烯层40设置在第一电极20表面，部分第二石墨烯层70设置在第二电极30表面，部分第二石墨烯层70与基底10接触。此时，第二石墨烯层70表面与基底10表面不平行，为倾斜设置，第二电极30的厚度为纳米级，第二石墨烯层70的长度为微米级，第二石墨烯层70的倾斜程度可以忽略。
在本发明一具体实施例中，当第一石墨烯层40设置在沟道结构内并与第一电极20靠近第二电极30的一端接触连接时，第一石墨烯层40、黑磷薄膜层50和二硫化钼层60的总厚度等于第二电极30层的厚度，部分第二石墨烯层70设置在第二电极30表面，进而提高整体结构的稳定性。
在本发明一具体实施例中，当第二石墨烯层70设置在沟道结构内并与第二电极30靠近第一电极20的一端接触连接时，黑磷薄膜层50、第二石墨烯层70和二硫化钼层60的总厚度等于第一电极20层的厚度，部分第一石墨烯层40设置在第一电极20表面，进而提高整体结构的稳定性。
在本发明中，第一石墨烯层40、黑磷薄膜层50、二硫化钼层60和第二石墨烯层70依次层叠设置在沟道结构内，包括第一石墨烯层40、黑磷薄膜层50、二硫化钼层60和第二石墨烯层70依次层叠后设置在沟道结构内，其中，第一石墨烯层40比黑磷薄膜层50、二硫化钼层60和第二石墨烯层70更靠近基底10，或第二石墨烯层70比第一石墨烯层40、黑磷薄膜层50和二硫化钼层60更靠近基底10。
在本发明一实施方式中，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与黑磷薄膜层50在基底10上的正投影面积比为1：(0.2-5)。此时可以更好地使石墨烯/二硫化钼/石墨烯异质结发挥作用，实现快速光响应探测。进一步的，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与黑磷薄膜层50在基底10上的正投影面积比为1：(1-3)。更进一步的，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与黑磷薄膜层50在基底10上的正投影面积比为1：(1-1.5)，更有利于光电探测，同时降低暗电流，并节省石墨烯材料。在本发明一具体实施例中，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与黑磷薄膜层50在基底10上的正投影面积比为1：1。
在本发明一实施方式中，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与二硫化钼层60在基底10上的正投影面积比为1：(0.2-5)。此时可以更好地使石墨烯/二硫化钼/石墨烯异质结发挥作用，实现快速光响应探测。进一步的，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与二硫化钼层60在基底10上的正投影面积比为1：(1-3)。更进一步的，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与二硫化钼层60在基底10上的正投影面积比为1：(1-1.5)，更有利于光电探测，同时降低暗电流，并节省石墨烯材料。在本发明一具体实施例中，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与二硫化钼层 60在基底10上的正投影面积比为1：1。
在本发明一实施方式中，第一石墨烯层40在基底10上的正投影与第二石墨烯层70在基底10上的正投影的重合区域，与黑磷薄膜层50和二硫化钼层60在基底10上的正投影完全重叠，提高快速响应。
在本发明中，第一石墨烯层40、黑磷薄膜层50、二硫化钼层60和第二石墨烯层70之间通过范德华力连接，形成范德华力异质结，使得光电探测器整体结构稳定。
在本发明中，沟道结构包括第一电极10和第二电极20之间的区域，也包括该区域上方的空间。也就是说，第一石墨烯层40、黑磷薄膜层50、二硫化钼层60和第二石墨烯层70可以层叠设置在第一电极10和第二电极20之间的区域，也可以设置在第一电极10和第二电极20之间的区域的上方。在本发明一实施例中，第一石墨烯层40、黑磷薄膜层50、二硫化钼层60和第二石墨烯层70层叠设置在第一电极10和第二电极20之间的区域。
在本发明一实施方式中，光电探测器还包括自修复电极，自修复电极设置在第一电极20和/或第二电极30的表面。在本发明中，自修复电极设置在第一电极20和/或第二电极30的表面，用于在第一电极20和/或第二电极30出现细小裂痕、裂缝时，可以对出现细小裂痕、裂缝进行修复，避免出现的裂痕、裂缝对光电探测器的工作产生影响，进而实现自修复过程，提高了光电探测器的使用寿命。
在本发明一实施方式中，自修复电极包括电极基体和自修复层，自修复层设置在电极基体靠近第一电极和/或第二电极的一侧表面。在本发明一实施例中，电极基体一表面全部设置有自修复层。在本发明另一实施例中，电极基体一表面部分设置有自修复层。可选的，自修复层在电极基体表面的正投影占电极基体表面面积的20％-70％。可选的，自修复层的材质包括聚氨酯、环氧树脂、乙烯-醋酸乙烯酯共聚物、聚酰亚胺、聚己内酯、聚乳酸、聚乙醇酸、聚乳酸-羟基乙酸共聚物、聚乙烯醇及其衍生物中的至少一种。具体的，自修复层的材质可以但不限于为长链羰基化改性的聚氨酯。可选的，电极基体的材质包括金、银、铂、铜、铬和钛中的至少一种。进一步的，电极基体包括电极连接层和电极金属层，电极连接层与自修复层接触。更进一步的，电极连接层的材质包括铬和/或钛，电极金属层的材质包括金、银、铂和铜中的至少一种。在本发明中，电极连接层除了用于导电，还起到一定的连接作用，使得电极金属层与自修复层更好的粘附和连接，提高电极基体与自修复层的结合力。具体的，可以但不限于为电极基体为铬层和金层层叠形成。
请参阅图2，为本发明一实施例提供的一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的制备方法流程图，包括：
S110：提供基底，在所述基底一侧表面沉积电极材料，形成间隔设置的第一电极和第二电极，其中，所述第一电极和所述第二电极之间形成沟道结构。
在S110中，电极材料包括金、银、铂、铜、铬和钛中的至少一种。在本发明中，第一电极和第二电极的材质可以相同，也可以不同，对此不作限定。可选的，通过蒸镀、溅射或离子镀方式沉积电极材料。具体的，可以但不限于为，将基底粘贴在带有电极图案的精密硅基掩膜版上，然后一起放入电子束蒸发仪中蒸镀电极材料，得到带有空白电极图案 的基底。其中，基底、第一电极和第二电极的选择如上所述，在此不再赘述。
S120：将第一石墨烯薄膜、黑磷薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯薄膜和所述第二石墨烯薄膜接触连接，得到基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器。
在S120中，基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器包括基底、第一电极、第二电极、第一石墨烯层、黑磷薄膜层、二硫化钼层和第二石墨烯层，第一电极和第二电极间隔设置在基底的一侧表面，第一电极和第二电极之间形成沟道结构，第一石墨烯层、黑磷薄膜层、二硫化钼层和第二石墨烯层依次层叠设置在沟道结构内，第一电极和第二电极分别与第一石墨烯层和第二石墨烯层接触连接。其中，第一石墨烯薄膜、黑磷薄膜、二硫化钼薄膜和第二石墨烯薄膜依次对应于第一石墨烯层、黑磷薄膜层、二硫化钼层和第二石墨烯层，第一石墨烯层、黑磷薄膜层、二硫化钼层和第二石墨烯层的选择如上所述，在此不再赘述。在本发明中，可以但不限于为第一石墨烯薄膜、黑磷薄膜、二硫化钼薄膜和第二石墨烯薄膜通过剥离法制备得到。
在本发明一实施方式中，制备方法还包括：将自修复材料涂覆在第一电极和/或第二电极的表面，形成自修复层；在自修复层上沉积电极材料，形成自修复电极。其中，该制备过程可以在形成第一电极和第二电极后进行，也可以在形成第一石墨烯层、二硫化钼层和第二石墨烯层中至少一层后进行，对此不作限定。
本发明提供的基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器，通过在光电探测器中设置石墨烯/黑磷/二硫化钼/石墨烯异质结，解决现有光电探测器响应速度慢的问题，实现宽波段的光响应，并且光电探测器的响应速度得到了显著提高，响应速度可以达到微秒级，灵敏度高，拓宽其应用范围。本发明提供的基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的制备方法简单易操作，可以实现快速响应的光电探测器。
实施例1
将聚对苯二甲酸乙二醇酯(PET)基底裁剪切成1×1cm 2大小，将设计好电极形状的硅基掩模版固定在该PET基底上，通过热蒸镀的方法先后蒸镀铬层和金层，其中铬层的厚度为5nm，金层的厚度为40nm，最后将PET基底取出，即得到具有间隔设置的第一电极和第二电极的柔性PET基底，第一电极和第二电极的厚度为45nm，第一电极和第二电极之间形成沟道结构。
利用scotch胶带剥离石墨烯，并将其粘贴到PDMS薄膜上，随后在二维材料定点转移平台将石墨烯薄膜转移到柔性PET基底上，石墨烯薄膜的厚度为10nm。类似的，利用scotch胶带剥离黑磷薄膜和二硫化钼薄膜，并依次转移至柔性PET基底上，黑磷薄膜的厚度为10nm，二硫化钼薄膜的厚度为25nm，第一石墨烯薄膜、黑磷薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在沟道结构内，得到石墨烯/黑磷/二硫化钼/石墨烯异质结，部分第一石墨烯薄膜设置在第一电极表面，部分第二石墨烯薄膜设置在第二电极表面，即制得基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器。
实施例2
将聚二甲基硅氧烷基底粘贴在带有电极图案的精密硅基掩膜版上，然后一起放入电子束蒸发仪中分别蒸镀钛层和铜层，最后将聚二甲基硅氧烷基底取出，即得到具有间隔设置的第一电极和第二电极的聚二甲基硅氧烷基底，第一电极和第二电极的厚度为60nm，第一电极和第二电极之间形成沟道结构。
将第一石墨烯薄膜、黑磷薄膜、二硫化钼薄膜和第二石墨烯薄膜转移到聚二甲基硅氧烷基底上，第一石墨烯薄膜的厚度为8nm，黑磷薄膜的厚度为13nm，二硫化钼薄膜的厚度为20nm，第二石墨烯薄膜的厚度为12nm，第一石墨烯薄膜、黑磷薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在沟道结构内，得到石墨烯/黑磷/二硫化钼/石墨烯异质结，第一电极和第二电极分别与第一石墨烯薄膜和第二石墨烯薄膜接触连接，即制得基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器。
效果实施例
将实施例1制得的光电探测器放置在半导体特性分析仪配套的探针平台上，通过配套的CCD成像系统找到柔性基底上器件的准确位置。选取探针台配套的两个探针分别接触到器件的第一电极和第二电极上。引入655nm激光，垂直照射在光电探测器。打开半导体特性分析仪测试软件，其中设置作为漏极探针选择电压偏压模式，固定偏压为1V，另一金属探针作为源极，设置其电压为0V。设定特定的激光功率，通过调节斩波器的频率控制无光照/有光照的时长，测试光探测器在黑暗/有光条件下的电流变化，即光开关，确保器件存在光响应。将器件接入含有示波器的电路中，通过示波器读取的信号得到该器件的光响应时间。调节斩波器的频率，读出示波器的平均上升沿时间，即该光探测器对光的响应时间，结果如图3所示。测试条件为655nm波长激光，激光功率为160mW，设置稳压源Vi＝2V，斩波器频率100Hz，由图中可以看出电压信号的平均上升沿时间为906.8μs，光响应时间性质显著提高，达到微秒级。因此，本发明提供的基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器可以明显提高光电探测器的响应速度，实现微秒级响应。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器，其特征在于，包括基底、第一电极、第二电极、第一石墨烯层、黑磷薄膜层、二硫化钼层和第二石墨烯层，所述第一电极和所述第二电极间隔设置在所述基底的一侧表面，所述第一电极和所述第二电极之间形成沟道结构，所述第一石墨烯层、所述黑磷薄膜层、所述二硫化钼层和所述第二石墨烯层依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯层和所述第二石墨烯层接触连接。
  2. 如权利要求1所述的光电探测器，其特征在于，所述第一石墨烯层的厚度为0.3nm-15nm，所述黑磷薄膜层的厚度为0.5nm-20nm，所述二硫化钼层的厚度为0.6nm-50nm，所述第二石墨烯层的厚度为0.3nm-15nm。
  3. 如权利要求1所述的光电探测器，其特征在于，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述黑磷薄膜层在所述基底上的正投影面积比为1：(0.2-5)；所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述二硫化钼层在所述基底上的正投影面积比为1：(0.2-5)。
  4. 如权利要求1所述的光电探测器，其特征在于，所述第一石墨烯层在所述基底上的正投影与所述第二石墨烯层在所述基底上的正投影的重合区域，与所述黑磷薄膜层和所述二硫化钼层在所述基底上的正投影完全重叠。
  5. 如权利要求1所述的光电探测器，其特征在于，所述基底的材质包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚二甲基硅氧烷中的至少一种。
  6. 如权利要求1所述的光电探测器，其特征在于，所述第一电极和所述第二电极的材质包括金、银、铂、铜、铬和钛中的至少一种。
  7. 如权利要求6所述的光电探测器，其特征在于，所述第一电极和所述第二电极均为铬层和金层层叠形成，所述铬层与所述基底接触，所述铬层的厚度为5nm-10nm，所述金层的厚度为20nm-100nm。
  8. 如权利要求1所述的光电探测器，其特征在于，部分所述第一石墨烯层设置在所述第一电极表面，部分所述第二石墨烯层设置在所述第二电极表面。
  9. 如权利要求1所述的光电探测器，其特征在于，还包括自修复电极，所述自修复电极设置在所述第一电极和/或所述第二电极的表面，所述自修复电极包括电极基体和自修复层，所述自修复层设置在所述电极基体靠近所述第一电极和/或所述第二电极的一侧表面。
  10. 一种基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器的制备方法，其特征在于，包括：
    提供基底，在所述基底一侧表面沉积电极材料，形成间隔设置的第一电极和第二电极，其中，所述第一电极和所述第二电极之间形成沟道结构；
    将第一石墨烯薄膜、黑磷薄膜、二硫化钼薄膜和第二石墨烯薄膜依次层叠设置在所述沟道结构内，所述第一电极和所述第二电极分别与所述第一石墨烯薄膜和所述第二石墨烯薄膜接触连接，得到基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器。
PCT/CN2020/105550 2019-10-25 2020-07-29 基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法 WO2021077837A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201911026283.6 2019-10-25
CN201911026283.6A CN110993720B (zh) 2019-10-25 2019-10-25 基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法

Publications (1)

Publication Number Publication Date
WO2021077837A1 true WO2021077837A1 (zh) 2021-04-29

Family

ID=70082421

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/105550 WO2021077837A1 (zh) 2019-10-25 2020-07-29 基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法

Country Status (2)

Country Link
CN (1) CN110993720B (zh)
WO (1) WO2021077837A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114000103A (zh) * 2021-09-02 2022-02-01 西安交通大学 一种二硫化钼/石墨烯复合异质结及其制备方法
CN114689164A (zh) * 2022-04-01 2022-07-01 中国科学院半导体研究所 复合薄膜声音传感器及其制备方法和应用
CN114784125A (zh) * 2022-03-25 2022-07-22 国科大杭州高等研究院 一种非对称性诱导室温高灵敏光电探测器件及其制备方法
CN116130529A (zh) * 2022-10-25 2023-05-16 国科大杭州高等研究院 一种具有宽频光电响应的探测器件及其制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993720B (zh) * 2019-10-25 2022-07-26 深圳瀚光科技有限公司 基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法
CN111697091A (zh) * 2020-04-13 2020-09-22 东南大学 一种高性能二维材料光电探测器及其制备方法
CN111554780B (zh) * 2020-05-14 2022-09-20 南方科技大学 一种具有异质结的中红外发光二极管及其制备方法
CN113990970A (zh) * 2021-10-22 2022-01-28 广东工业大学 一种石墨烯/二硫化钨-二硒化钨异质结/石墨烯光电探测器及其制备方法和应用

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219403A (zh) * 2013-04-19 2013-07-24 苏州大学 基于二维层状原子晶体材料的光探测器
US20160020352A1 (en) * 2014-07-15 2016-01-21 Fundació Institut de Ciéncies Fotóniques Optoelectronic apparatus and fabrication method of the same
CN105679876A (zh) * 2016-03-18 2016-06-15 电子科技大学 基于黑磷/二硫化钼异质结的光探测器
CN107482044A (zh) * 2017-08-23 2017-12-15 京东方科技集团股份有限公司 用于oled显示器的彩膜基板和oled显示器
CN108447924A (zh) * 2018-03-19 2018-08-24 齐鲁工业大学 基于二维硒化铟和黑磷的范德瓦尔斯异质结的光探测器及其制备
CN108666381A (zh) * 2018-05-09 2018-10-16 深圳大学 一种异质结光电传感器及其制备方法
CN108831950A (zh) * 2018-05-23 2018-11-16 北京科技大学 一种超短沟道金属-半导体-金属型光探测器及制作方法
CN110993720A (zh) * 2019-10-25 2020-04-10 深圳大学 基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103606418B (zh) * 2013-10-22 2015-10-28 华南师范大学 一种树叶状透明导电电极的制备方法
CN105489693B (zh) * 2015-12-31 2017-09-29 南京大学 基于二维层状薄膜材料p‑g‑n异质结光电子器件
CN108231817A (zh) * 2018-01-29 2018-06-29 杭州紫元科技有限公司 一种基于二维材料/绝缘层/半导体结构的低功耗电荷耦合器件
CN109755307B (zh) * 2019-01-02 2021-02-12 南京大学 一种基于二维层状材料的雪崩场效应晶体管及测量装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219403A (zh) * 2013-04-19 2013-07-24 苏州大学 基于二维层状原子晶体材料的光探测器
US20160020352A1 (en) * 2014-07-15 2016-01-21 Fundació Institut de Ciéncies Fotóniques Optoelectronic apparatus and fabrication method of the same
CN105679876A (zh) * 2016-03-18 2016-06-15 电子科技大学 基于黑磷/二硫化钼异质结的光探测器
CN107482044A (zh) * 2017-08-23 2017-12-15 京东方科技集团股份有限公司 用于oled显示器的彩膜基板和oled显示器
CN108447924A (zh) * 2018-03-19 2018-08-24 齐鲁工业大学 基于二维硒化铟和黑磷的范德瓦尔斯异质结的光探测器及其制备
CN108666381A (zh) * 2018-05-09 2018-10-16 深圳大学 一种异质结光电传感器及其制备方法
CN108831950A (zh) * 2018-05-23 2018-11-16 北京科技大学 一种超短沟道金属-半导体-金属型光探测器及制作方法
CN110993720A (zh) * 2019-10-25 2020-04-10 深圳大学 基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114000103A (zh) * 2021-09-02 2022-02-01 西安交通大学 一种二硫化钼/石墨烯复合异质结及其制备方法
CN114784125A (zh) * 2022-03-25 2022-07-22 国科大杭州高等研究院 一种非对称性诱导室温高灵敏光电探测器件及其制备方法
CN114784125B (zh) * 2022-03-25 2024-04-02 国科大杭州高等研究院 一种非对称性诱导室温高灵敏光电探测器件及其制备方法
CN114689164A (zh) * 2022-04-01 2022-07-01 中国科学院半导体研究所 复合薄膜声音传感器及其制备方法和应用
CN114689164B (zh) * 2022-04-01 2023-04-28 中国科学院半导体研究所 复合薄膜声音传感器及其制备方法和应用
CN116130529A (zh) * 2022-10-25 2023-05-16 国科大杭州高等研究院 一种具有宽频光电响应的探测器件及其制备方法

Also Published As

Publication number Publication date
CN110993720B (zh) 2022-07-26
CN110993720A (zh) 2020-04-10

Similar Documents

Publication Publication Date Title
WO2021077837A1 (zh) 基于石墨烯/黑磷/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法
WO2021077838A1 (zh) 基于黑磷/石墨烯/二硫化钼异质结的光电探测器及其制备方法
WO2021077839A1 (zh) 基于石墨烯/二硫化钼/石墨烯异质结的快速光电探测器及其制备方法
CN107221575B (zh) 基于二维材料垂直肖特基结近红外探测器及制备方法
CN108198897B (zh) 一种石墨烯场效应晶体管量子点光电探测器及其制备方法
CN111739964B (zh) 一种双栅结构的二维半导体光电探测器及其制备方法
Liu et al. Flexible omnidirectional self-powered photodetectors enabled by solution-processed two-dimensional layered PbI2 nanoplates
CN105932090B (zh) 一种基于侧向光伏效应的薄膜结构位置灵敏探测器
CN110620164B (zh) 基于二维层状半导体材料的偏振光探测器及其制备方法
TW202017219A (zh) 半導體結構、光電器件、光探測器及光譜儀
WO2010110475A1 (ja) ショットキー型接合素子とこれを用いた光電変換素子及び太陽電池
CN114784125B (zh) 一种非对称性诱导室温高灵敏光电探测器件及其制备方法
Strauß et al. A simple 230 MHz photodetector based on exfoliated WSe 2 multilayers
RU2517802C1 (ru) Детектор излучения
US5665423A (en) Method for manufacturing a photodetector for sensing light having a wavelength within a wide range
US5478757A (en) Method for manufacturing photodetector using a porous layer
CN220272482U (zh) 一种铊镍硒非对称结构光电探测器
CN218896644U (zh) 一种铊镍硒光电探测器
CN116995127B (zh) 一种可调控的黑砷场效应管、光电探测器及其应用
CN116130529B (zh) 一种具有宽频光电响应的探测器件及其制备方法
CN113193061B (zh) 基于PbSe薄膜的自供电光位置灵敏探测器
Pandiev et al. Dynamic FPAA-based mixed-signal processing circuit for thin-film CdTe/lead-free Perovskite photodetectors
CN114361289B (zh) 一种基于范德华金属电极的自驱动超快光电探测器构筑方法
CN118099269A (zh) 一种图形化铁电畴调控的红外偏振光电探测器及其制备方法和应用
CN112599646B (zh) 一种全光谱光电双通道器件及其制备方法和应用

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20879156

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205ADATED 26/08/2022)

122 Ep: pct application non-entry in european phase

Ref document number: 20879156

Country of ref document: EP

Kind code of ref document: A1