WO2021072603A1 - 一种led检测装置和方法 - Google Patents

一种led检测装置和方法 Download PDF

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Publication number
WO2021072603A1
WO2021072603A1 PCT/CN2019/111065 CN2019111065W WO2021072603A1 WO 2021072603 A1 WO2021072603 A1 WO 2021072603A1 CN 2019111065 W CN2019111065 W CN 2019111065W WO 2021072603 A1 WO2021072603 A1 WO 2021072603A1
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Prior art keywords
electrode
circuit board
detection
led
chip
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PCT/CN2019/111065
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English (en)
French (fr)
Inventor
钟光韦
伍凯义
杨然翔
江仁杰
沈佳辉
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重庆康佳光电技术研究院有限公司
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Priority to CN201980002286.8A priority Critical patent/CN111201593B/zh
Priority to PCT/CN2019/111065 priority patent/WO2021072603A1/zh
Publication of WO2021072603A1 publication Critical patent/WO2021072603A1/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/14Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67271Sorting devices

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  • the present invention relates to the field of Micro-LED technology, in particular to an LED detection device and method.
  • Micro-LED Light Emitting Diode, LED
  • Micro-LED has the advantages of good stability and operating temperature, and its long service life. At the same time, it also inherits the advantages of LED low power consumption, color saturation, fast response speed, and strong contrast. In addition, Micro-LEDs have higher brightness and lower power consumption.
  • LED micro-devices must first be grown on a sapphire substrate by molecular beam epitaxy. To make a display, it is necessary to transfer the LED light-emitting micro-devices to a glass substrate. Since the size of the sapphire substrate for making LED micro-devices is basically the size of the silicon wafer, while the size of the glass substrate for making the display is much larger, it will inevitably require multiple transfers, that is to say, the huge transfer of Micro-LED The process is to transfer thousands of LEDs on the carrier substrate to the target backplane to form the final Micro-LED display. However, before the mass transfer step of Micro-LED, it should be ensured that each LED can be used normally.
  • the traditional LED chip electrical test is to use the probe 111 to contact the chip N electrode 105 and the chip P electrode 106 of the chip. After the LED 112 emits light, the light is collected by the light receiver 109. Information, the traditional LED detection method here requires the probe 111 to energize the LED chips on the chip substrate 108 one by one, and to detect the light 113 to be measured after each LED 112 is energized. This traditional detection method also requires probes to energize the LED 112 on the substrate one by one.
  • the size of the LED is very small, the probe is difficult to align the electrode of the LED, in the process of using the probe to energize the LED chip on the chip substrate, there is a risk of puncturing the LED, and it is difficult to ensure the detection.
  • the needle can accurately align the electrode of the LED chip.
  • the traditional LED detection method needs to move the probe position mechanically, which results in a slower LED chip detection speed.
  • the purpose of the present invention is to provide an LED detection device and method that can screen out chips with poor electrical properties, accurately align the electrodes of the LED chip for energization, prevent the LED chip from being damaged by the probe, and Improve the detection speed of LED chips.
  • the LED detection device includes:
  • the elastic substrate is arranged at the lower end of the detection circuit board, a detection electrode is arranged on the side of the elastic substrate away from the detection circuit board, the detection electrode is electrically connected to the detection circuit board, and the detection electrode The electrode facing the LED chip to be tested;
  • a fillable area, the fillable area is arranged between the detection circuit board and the elastic substrate.
  • the detection electrode includes:
  • the P electrode of the circuit board is facing the P electrode of the LED chip to be tested;
  • the N electrode of the circuit board is facing the N electrode of the LED chip to be tested;
  • the circuit board P has a common electrode, and the circuit board P electrodes are respectively connected to the circuit board P common electrode;
  • the circuit board has N common electrodes, and the circuit board N electrodes are respectively connected to the circuit board N common electrodes.
  • a further arrangement of the present invention further includes: a chip substrate, and the LED chip to be tested is arranged on the chip substrate.
  • the LED chip to be tested includes:
  • a chip body the chip body being arranged on the upper end surface of the chip substrate;
  • the electrode to be detected, the electrode to be detected is arranged on the upper end surface of the chip body;
  • the electrode to be detected includes:
  • Chip P electrode the chip P electrode is facing the circuit board P electrode;
  • Chip N electrode the chip N electrode is opposite to the circuit board N electrode.
  • a further arrangement of the present invention further includes: a light receiver, which is arranged on the side of the chip substrate away from the LED chip to be detected.
  • a further arrangement of the present invention further includes: a plurality of pressure sensing components, the pressure sensing components are arranged on the upper end surface of the detection circuit board, and the position of each pressure sensing component corresponds to the position of the LED chip to be detected , Used to detect the pressure of each position on the detection circuit board corresponding to the LED chip to be detected.
  • the elastic substrate is made of a polymer material, and the polymer material includes at least one of polydimethylsiloxane, polyimide, and polymethyl methacrylate.
  • the fillable area is filled with gas or fluid; wherein the gas is atmosphere or nitrogen, and the fluid is deionized water.
  • the LED detection method includes:
  • a detection circuit board and an elastic substrate are provided, and a fillable area is provided between the detection circuit board and the elastic substrate; wherein a detection electrode is provided on the side of the elastic substrate away from the detection circuit board, and the detection electrode Electrically connected to the detection circuit board, and the detection electrode is facing the electrode of the LED chip to be detected;
  • a light receiver is provided, and when the light receiver receives the light beam emitted by the LED chip to be detected at the current detection position, it is determined that the LED chip to be detected at the current position is a benign LED chip.
  • the LED chip to be detected when the light receiver does not receive the light beam emitted by the LED chip to be detected, it is determined that the LED chip to be detected at the current position is an LED chip with poor electrical properties.
  • the present invention provides an LED detection device and method.
  • the LED detection device includes: a detection circuit board; an elastic substrate, the elastic substrate is arranged at the lower end of the detection circuit board, and the elastic substrate is far away from the detection circuit board
  • a detection electrode is provided on one side of the detection electrode, the detection electrode is electrically connected to the detection circuit board, and the detection electrode is facing the electrode of the LED chip to be detected; and a fillable area, the fillable area is provided on the detection circuit board And the elastic substrate.
  • the present invention after filling the fillable area so that the detection electrode is in contact with the electrode to be detected, to determine whether the LED chip to be detected at the current detection position is a chip with poor electrical properties, so as to be able to screen out Chips with poor electrical properties.
  • the present application does not need to move the probe position mechanically, which prevents the LED chip from being damaged by the probe, can accurately align the LED chip electrode for energization, and improve the detection speed of the LED chip.
  • Figure 1 is a schematic diagram of Micro-LED mass transfer.
  • Figure 2 is a schematic diagram 1 of the traditional LED detection method.
  • Figure 3 is a schematic diagram 2 of the traditional LED detection method.
  • Figure 4 is a schematic diagram 3 of the traditional LED detection method.
  • Fig. 5 is a structural diagram 1 of the LED detection device of the present invention.
  • Fig. 6 is a schematic diagram 2 of the structure of the LED detection device of the present invention.
  • FIG. 7 is a schematic diagram 3 of the structure of the LED detection device of the present invention.
  • 100 detection circuit board; 101, fillable area; 102, elastic substrate; 103, circuit board P electrode; 1031, circuit board P common electrode; 104, circuit board N electrode; 1041, circuit board N Common electrode; 105, chip P electrode; 106, chip N electrode; 107, chip body; 108, chip substrate; 109, light receiver; 110, pressure sensing component; 111, probe; 112, LED; 113, waiting Metering.
  • the present invention provides an LED detection device and method.
  • the LED detection device can produce corresponding detection electrode positions according to LED chips of different sizes for electrical detection, and can perform electrical detection for LED chips of different heights.
  • the present invention provides a preferred embodiment of an LED detection device.
  • the LED detection device includes a detection circuit board 100, an elastic substrate 102, a fillable area 101, a light receiver 109 and a pressure sensing component 110.
  • the elastic substrate 102 is arranged at the lower end of the detection circuit board 100, and a detection electrode is arranged on the side of the elastic substrate 102 away from the detection circuit board 100, and the detection electrode is electrically connected to the detection circuit board 100 ,
  • the detection electrode is facing the electrode of the LED chip to be detected, and the LED chip to be detected is arranged on a chip substrate 108.
  • the fillable area 101 is arranged between the detection circuit board 100 and the elastic substrate 102, and the light receiver is arranged on the side of the chip substrate away from the LED chip to be detected, that is, the light receiver 109 is arranged on the light-emitting side of the LED chip to be inspected, the pressure sensing assembly 110 is arranged in multiples, the pressure sensing assembly 110 is arranged on the upper end surface of the inspection circuit board 100, and each pressure sensing assembly
  • the position of 110 corresponds to the position of the LED chip to be detected, and is used to detect the pressure of each position on the detection circuit board 100 corresponding to the LED chip to be detected.
  • the circuit of the detection circuit board 100 and the circuit of the elastic substrate 102 are the same, and because the fillable area 101 is provided between the detection circuit board 100 and the elastic substrate 102, the detection circuit board 100 can also be used as the fillable area 101 during filling. Fixed substrate.
  • the detection electrode is brought into contact with the LED chip to be detected, that is, the detection electrode is attached to the electrode of the LED chip to be detected, and the detection electrode is connected to the electrode of the LED chip to be detected.
  • the pressure sensing component 110 displays a green light, it means that there is an LED chip in the currently detected position, and if the pressure sensing component 110 displays a red light, it means the current detection There is no LED chip in the position, so it can record which positions have LED chips and which positions do not have LED chips, that is to say, the device can record coordinates without LED chips.
  • the LED chip to be tested will emit light, and the light receiver 109 will receive the light source emitted by the LED chip to be tested.
  • the LED at the current position is electrically defective, that is, after confirming that there is an LED chip at the current position, and the light receiver 109 does not receive the light source (beam), then the LED at the current position can be determined
  • the chip is of poor electrical properties, so that the poorly electrical chips can be screened out, and the coordinates of the poor LED chip can be recorded, thereby reducing the subsequent detection time.
  • the application does not need to move the probe position mechanically, avoids the LED chip being damaged by the probe, can accurately align the electrode of the LED chip for energization, and improve the detection speed of the LED chip.
  • the detection electrode includes a circuit board P electrode 103, a circuit board N electrode 104, a circuit board P common electrode 1031, and a circuit board N common electrode 1041.
  • the circuit board P electrode 103 is facing the P electrode of the LED chip to be tested
  • the circuit board N electrode 104 is facing the N electrode of the LED chip to be tested
  • the circuit board P electrode 103 is opposite to the P electrode of the LED chip to be tested.
  • the circuit board P common electrode 1031 is connected
  • the circuit board N electrode 104 is connected to the circuit board N common electrode 1041 respectively.
  • the design of the LED chip will be different. For example, the area and spacing of the LED chip will be different.
  • the circuit board P electrode 103 and the circuit board N electrode 104 on the elastic substrate 102 will have different positions. The difference.
  • the circuit board P electrode 103 is connected to the circuit board P common electrode 1031
  • the circuit board N electrode 104 is connected to the circuit board N common electrode 1041 to achieve LEDs of different sizes.
  • Chip design making different detection electrode positions (circuit board P electrode 103 and circuit board N electrode 104) on the elastic substrate 102 for electrical detection.
  • the LED chip to be tested includes a chip body 107 and an electrode to be tested.
  • the chip body 107 is arranged on the upper end surface of the chip substrate 108, and the electrode to be detected is arranged on the upper end surface of the chip body 107.
  • the electrode to be detected includes a chip P electrode 105 and a chip N electrode 106.
  • the chip P electrode 105 is facing the circuit board P electrode 103, and the chip N electrode 106 is facing the circuit board N electrode. 104.
  • the detection electrode will be attached to the LED chip to be tested, that is, the circuit board P electrode 103 is attached to the chip P electrode 105, and the circuit board N electrode 104 is attached to the chip N electrode 106.
  • the detected LED chip to be detected in the current position is a qualified LED chip, then the currently detected LED chip to be detected will emit a light source (beam), and the light receiver 109 can detect the light source ( If the light receiver 109 does not receive the light source (light beam), it means that the currently detected LED chip to be detected is a bad LED chip.
  • the elastic substrate 102 is made of a polymer material.
  • the polymer material may be polydimethylsiloxane, polyimide, polymethylmethacrylate, and the like.
  • the fillable area 101 is filled with gas or fluid.
  • the refillable area 101 uses a material that is repeatedly filled, for example, a gas or a fluid, where the gas may be air or nitrogen, and the fluid may be deionized water.
  • the fluid used in the fillable area 101 needs to be recyclable and non-volatile.
  • a fillable area 101 is added between the detection circuit board 100 and the elastic substrate 102, and a detection electrode is made on the elastic substrate 102 (flexible substrate).
  • the detection electrode can touch different heights. Therefore, it is possible to conduct electrical testing for LED chips of different heights. Wherein, since the total thickness of the LED chip is about 10 microns, the height adjustment range of the fillable area 101 is 0-10 microns.
  • the present invention also provides an LED detection method, which includes:
  • a detection circuit board 100 and an elastic substrate 102 are provided, and a fillable area 101 is provided between the detection circuit board 100 and the elastic substrate 102; wherein the elastic substrate 102 is provided with a side away from the detection circuit board 100 A detection electrode, the detection electrode is electrically connected to the detection circuit board 100, and the detection electrode is facing the electrode of the LED chip to be detected;
  • a pressure sensing component 110 when the pressure sensing component 110 displays a green light after the detection electrode is in contact with the electrode to be detected, it is determined that the LED chip to be detected is present at the current detection position;
  • a light receiver 109 is provided, and when the light receiver 109 receives the light source (light beam) emitted by the LED chip to be detected at the current detection position, it is determined that the LED chip to be detected at the current position is a benign LED chip. The details are as described in an LED detection device, and will not be repeated here.
  • the light receiver 109 when the light receiver 109 does not receive the light source (light beam) emitted by the LED chip to be detected, it is determined that the LED chip to be detected at the current position is electrically poor. LED chip. The details are as described in an LED detection device, and will not be repeated here.
  • the LED detection device includes: a detection circuit board 100; an elastic substrate 102, the elastic substrate 102 is arranged at the lower end of the detection circuit board 100, The elastic substrate 102 is provided with a detection electrode on a side away from the detection circuit board 100, the detection electrode is electrically connected to the detection circuit board, and the detection electrode is facing the electrode of the LED chip to be detected; and a fillable area 101 The fillable area 101 is arranged between the detection circuit board 100 and the elastic substrate 102.
  • the detection electrode is brought into contact with the electrode to be detected, so as to determine whether the LED chip to be detected at the current detection position is a chip with poor electrical properties and accurately align it.
  • the electrodes of the LED chip are energized, so that the LED chips with poor electrical properties can be screened out, and the coordinates of the bad LED chips can be recorded, so that the subsequent detection time is reduced.
  • this application does not need to use probes to energize the LED chips on the chip substrate 108 one by one, that is, it does not need to mechanically move the position of the probe. On the one hand, it prevents the LED chip from being damaged by the probe. On the other hand, it can Accurately align the electrodes of the LED chip for energization, and improve the detection speed of the LED chip.

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Abstract

一种LED检测装置和方法,该LED检测装置包括:检测电路板(100);弹性基板(102),所述弹性基板(102)设置在所述检测电路板(100)下端,所述弹性基板(102)远离所述检测电路板(100)的一面设置有检测电极,所述检测电极与所述检测电路板(100)电连接,所述检测电极正对于待检测LED芯片的电极;以及可填充区(101),所述可填充区(101)设置在所述检测电路板(100)和所述弹性基板(102)之间。通过将所述可填充区(101)进行填充后,以使所述检测电极与待检测电极接触,以判断当前检测位置的所述待检测LED芯片是否为电性不良芯片,从而能够筛选出电性不良的芯片。另外,本装置不需要机械式地移动探针位置,避免了LED芯片被探针戳伤,能够准确对准LED芯片电极进行通电并提高了LED芯片的检测速度。

Description

一种LED检测装置和方法 技术领域
本发明涉及Micro-LED技术领域,尤其涉及的是一种LED检测装置和方法。
背景技术
Micro-LED(Light Emitting Diode,LED)技术,即LED微缩化和矩阵化技术。Micro-LED具有良好的稳定性以及运行温度上的优势,其使用寿命长,同时也承继了LED低功耗、色彩饱和度、反应速度快、对比度强等优点。另外,Micro-LED的亮度更高,且功率消耗量更低。
如图1所示,由于晶格匹配的原因,LED微器件必须先在蓝宝石类的基板上通过分子束外延的生长出来。而做成显示器,必须要把LED发光微器件转移到玻璃基板上。由于制作LED微器件的蓝宝石基板尺寸基本上就是硅晶元的尺寸,而制作显示器则是尺寸大得多的玻璃基板,因此必然需要进行多次转运,也就是说,Micro-LED的巨量转移过程就是将载体基板上成千上万颗LED转移到目标背板上形成最终的Micro-LED显示器。但在Micro-LED的巨量转移步骤之前,应该确保每颗LED可正常使用,因此需要对载体基板上的每颗LED进行光电特性检测。如图2、图3与图4所示,传统的LED芯片电性检测为通过使用探针111接触芯片的芯片N电极105和芯片P电极106,LED112发出光后经由光接收器109接受光源收集信息,此中传统的LED检测方法需要用探针111逐个对芯片基板108上的LED芯片进行通电,并检测每个LED112通电后发出的待测光113。该传统的检测方法也需要探针逐个对基板上的LED112进行通电。对于Micro-LED来说,LED的尺寸非常小,探针难以对准LED的电极,在使用探针对芯片基板上的LED芯片进行通电的过程中,存在戳伤LED的风险,而且难以保证探针能够准确地对准LED芯片的电极。另外,传统的LED检测方法需要机械地移动探针位置,从而导致LED芯片检测速度较慢。
因此,现有技术还有待于改进和发展。
发明内容
鉴于上述现有技术的不足,本发明的目的在于提供一种LED检测装置和方法,能够筛选出电性不良的芯片、准确对准LED芯片电极进行通电、避免LED芯片被探针戳伤,并提高了LED芯片的检测速度。
本发明的技术方案如下:
该LED检测装置,包括:
检测电路板;
弹性基板,所述弹性基板设置在所述检测电路板下端,所述弹性基板远离所述检测电路板的一面设置有检测电极,所述检测电极与所述检测电路板电连接,所述检测电极正对于待检测LED芯片的电极;以及
可填充区,所述可填充区设置在所述检测电路板和所述弹性基板之间。
本发明的进一步设置,所述检测电极包括:
电路板P电极,所述电路板P电极正对于所述待检测LED芯片的P电极;
电路板N电极,所述电路板N电极正对于所述待检测LED芯片的N电极;
电路板P共电极,所述电路板P电极分别与所述电路板P共电极连接;以及
电路板N共电极,所述电路板N电极分别与所述电路板N共电极连接。
本发明的进一步设置,还包括:芯片基板,所述待检测LED芯片设置在所述芯片基板上。
本发明的进一步设置,所述待检测LED芯片包括:
芯片本体,所述芯片本体设置在所述芯片基板上端面;以及
待检测电极,所述待检测电极设置在所述芯片本体上端面;
其中,所述待检测电极包括:
芯片P电极,所述芯片P电极正对于所述电路板P电极;以及
芯片N电极,所述芯片N电极正对于所述电路板N电极。
本发明的进一步设置,还包括:光接收器,所述光接收器设置在所述芯片基板远离待检测LED芯片一侧。
本发明的进一步设置,还包括:多个压力感测组件,所述压力感测组件设置在所述检测电路板的上端面并且每个压力感测组件的位置与所述待检测LED芯片位置对应,用于检测所述检测电路板上与所述待检测LED芯片相对应的每个位置的压力。
本发明的进一步设置,所述弹性基板由高分子材料制成,所述高分子材料至少包括聚二甲基硅氧烷、聚酰亚胺和聚甲基丙烯酸甲酯中的一种。
本发明的进一步设置,所述可填充区填充气体或流体;其中,所述气体为大气或氮气,所述流体为去离子水。
该LED检测方法,包括:
提供一检测电路板和弹性基板,所述检测电路板和所述弹性基板之间设置有可填充区;其中,所述弹性基板远离所述检测电路板的一面设置有检测电极,所述检测电极与所述检测电路板电连接,所述检测电极正对于所述待检测LED芯片的电极;
将所述可填充区进行填充后,以使所述检测电极与所述待检测LED芯片的电极接触;
提供一压力感测组件,当所述检测电极与所述待检测LED芯片的电极接触后,若所述压力感测组件显示绿灯,则当前检测位置具有所述待检测LED芯片;
提供一光接收器,当所述光接收器接收到当前检测位置的所述待检测LED芯片发出的光束时,则判定当前位置的所述待检测LED芯片为良性LED芯片。
本发明的进一步设置,当所述光接收器没有接收到所述待检测LED芯片发出的光束时,则判定当前位置的所述待检测LED芯片为电性不良的LED芯片。
本发明所提供的一种LED检测装置和方法,该LED检测装置,包括:检测电路板;弹性基板,所述弹性基板设置在所述检测电路板下端,所述弹性基板远离所述检测电路板的一面设置有检测电极,所述检测电极与所述检测电路板电连接,所述检测电极正对于待检测LED芯片的电极;以及可填充区,所述可填充区设置在所述检测电路板和所述弹性基板之间。本发明通过将所述可填充区进行填充后,以使所述检测电极与所述待检测电极接触,以判断当前检测位置的所述待检测LED芯片是否为电性不良芯片,从而能够筛选出电性不良的芯片。另外,本申请不需要机械式地移动探针位 置,避免了LED芯片被探针戳伤,能够准确对准LED芯片电极进行通电并提高了LED芯片的检测速度。
附图说明
图1是Micro-LED巨量转移的示意图。
图2是传统LED检测方法的结构示意图1。
图3是传统LED检测方法的结构示意图2。
图4是传统LED检测方法的结构示意图3。
图5是本发明中LED检测装置的结构示意图1。
图6是本发明中LED检测装置的结构示意图2。
图7是本发明中LED检测装置的结构示意图3。
附图中各标记:100、检测电路板;101、可填充区;102、弹性基板;103、电路板P电极;1031、电路板P共电极;104、电路板N电极;1041、电路板N共电极;105、芯片P电极;106、芯片N电极;107、芯片本体;108、芯片基板;109、光接收器;110、压力感测组件;111、探针;112、LED;113、待测光。
具体实施方式
本发明提供一种LED检测装置和方法,该LED检测装置可以依照不同大小的LED芯片制作相应的检测电极位置进行电性检测,并能够针对不同高度的LED芯片进行电性检测。为使本发明的目的、技术方案及效果更加清楚、明确,以下参照附图并举实例对本发明进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
在实施方式和申请专利范围中,除非文中对于冠词有特别限定,否则“一”与“所述”可泛指单一个或复数个。
另外,若本发明实施例中有涉及“第一”、“第二”等的描述,则该“第一”、“第二”等的描述仅用于描述目的,而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一 个该特征。另外,各个实施例之间的技术方案可以相互结合,但是必须是以本领域普通技术人员能够实现为基础,当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在,也不在本发明要求的保护范围之内。
请同时参阅图5至图7,本发明提供了一种LED检测装置的较佳实施例。
请参阅图5与图6,该LED检测装置,包括检测电路板100、弹性基板102、可填充区101、光接收器109和压力感测组件110。具体地,所述弹性基板102设置在所述检测电路板100下端,所述弹性基板102远离所述检测电路板100的一面设置有检测电极,所述检测电极与所述检测电路板100电连接,所述检测电极正对于待检测LED芯片的电极,所述待检测LED芯片设置在一芯片基板108上。所述可填充区101设置在所述检测电路板100和所述弹性基板102之间,所述光接收器设置在所述芯片基板远离待检测LED芯片一侧,也即,所述光接收器109设置在所述待检测LED芯片的发光侧,所述压力感测组件110设置有多个,所述压力感测组件110设置在所述检测电路板100的上端面并且每个压力感测组件110的位置与所述待检测LED芯片位置对应,用于检测所述检测电路板100上与所述待检测LED芯片相对应的每个位置的压力。其中,检测电路板100的线路和弹性基板102的线路相同,且因可填充区101设置在检测电路板100和弹性基板102之间,因而检测电路板100也可作为可填充区101在填充时固定的衬底。
通过上述技术方案,将所述可填充区101进行填充后,以使所述检测电极与所述待检测LED芯片接触,即检测电极会与所述待检测LED芯片的电极贴合,检测电极与所述待检测LED芯片的电极贴合后,若所述压力传感组件110显示绿灯,则说明当前检测的位置有LED芯片,若所述压力感测组件110显示为红灯,则说明当前检测位置没有LED芯片,因而可以记录哪些位置有LED芯片,哪些位置没有LED芯片,也就是说,本装置能够对没有LED芯片的坐标进行记录。同时,当待检测LED芯片的电极与所述检测电极贴合后,待检测LED芯片会发出光,所述光接收器109会接收待检测LED芯片发出的光源,若光接收器109上没有接收到光源,则可以判定当前位置的LED芯片为电性不良,也就是说,在确认了当前位置具有LED芯片之后,而光接收器109并 未接收到光源(光束),则判定当前位置的LED芯片为电性不良,从而能够筛选出电性不良的芯片,并对不良LED芯片的坐标进行记录,从而减少了后续的检测时间。另外,相对于现有技术,本申请不需要机械式地移动探针位置,避免了LED芯片被探针戳伤,能够准确对准LED芯片电极进行通电并提高了LED芯片的检测速度。
请参阅图6与图7,在一个实施例的具体实施方式中,所述检测电极包括电路板P电极103、电路板N电极104、电路板P共电极1031以及电路板N共电极1041。具体地,所述电路板P电极103正对于所述待检测LED芯片的P电极,所述电路板N电极104正对于所述待检测LED芯片的N电极,所述电路板P电极103分别与所述电路板P共电极1031连接,所述电路板N电极104分别与所述电路板N共电极1041连接。根据实际需求,LED芯片的设计会存在不同,例如,LED芯片的面积大小和间距都会存在不同,因而所述弹性基板102上的电路板P电极103和电路板N电极104的设置位置也会有所不同。本申请通过将所述电路板P电极103分别与所述电路板P共电极1031连接,所述电路板N电极104分别与所述电路板N共电极1041连接,以达到可依照不同大小的LED芯片设计,在弹性基板102上制作不同的检测电极位置(电路板P电极103和电路板N电极104)进行电性检测。
请继续参阅图6,在一个实施例的具体实施方式中,所述待检测LED芯片包括芯片本体107和待检测电极。具体地,所述芯片本体107设置在所述芯片基板108上端面,所述待检测电极设置在所述芯片本体107上端面。
更具体地,所述待检测电极包括芯片P电极105和芯片N电极106,所述芯片P电极105正对于所述电路板P电极103,所述芯片N电极106正对于所述电路板N电极104。当可填充区101填充完成后,检测电极会与待检测LED芯片贴合,即此时电路板P电极103与芯片P电极105贴合,电路板N电极104与芯片N电极106贴合,若当前位置所述检测的待检测LED芯片为合格的LED芯片,那么当前检测的待检测LED芯片会发出光源(光束),则光接收器109能够对前检测的待检测LED芯片会发出的光源(光束)进行接收,若光接收器109没有接收到光源(光束),则说明当前检测的待检测LED芯片为不良LED芯片。
在一个实施例的具体实施方式中,所述弹性基板102由高分子材料制成。例如,所述高分子材料可以为聚二甲基硅氧烷、聚酰亚胺和聚甲基丙烯酸甲酯等。
请继续参阅图6,在一个实施例的具体实施方式中,所述可填充区101填充气体或流体。具体地,可填充区101使用重复填充的材质,例如,气体或者流体,其中,所述气体可以为大气或氮气,所述流体可以为去离子水。需要说明的是,可填充区101使用的流体需为可回收且不具有挥发性质的流体。现有技术中,因为检测的LED芯片如果遇到高度不同的情况下,以传统的探针会无法进行电性检测。本申请通过在检测电路板100和弹性基板102之间增加可填充区101,并在弹性基板102(可挠基板)上方制作检测电极,经由可填充区101填充后,检测电极即可接触不同高度的芯片,从而可以针对不同高度的LED芯片进行电性检测。其中,因LED芯片的总厚度约为10微米,因而可填充区101的高度调整范围为0-10微米。
请同时参阅图5、图6与图7,本发明还提供了一种LED检测方法,该方法包括:
提供一检测电路板100和弹性基板102,所述检测电路板100和所述弹性基板102之间设置有可填充区101;其中,所述弹性基板102远离所述检测电路板100的一面设置有检测电极,所述检测电极与所述检测电路板100电连接,所述检测电极正对于所述待检测LED芯片的电极;
将所述可填充区101进行填充后,以使所述检测电极与所述待检测LED芯片的电极接触;
提供一压力感测组件110,当所述检测电极与所述待检测电极接触后,当所述压力感测组件110显示绿灯时,则判定当前检测位置具有所述待检测LED芯片;
提供一光接收器109,当所述光接收器109接收到当前检测位置的所述待检测LED芯片发出的光源(光束)时,则判定当前位置的所述待检测LED芯片为良性LED芯片。具体如一种LED检测装置所述,在此不再赘述。
在一个实施例的具体实施方式中,当所述光接收器109没有接收到所述待检测LED芯片发出的光源(光束)时,则判定当前位置的所述待检测LED芯片为电性不良的LED芯片。具体如一种LED检测装置所述,在此不再赘述。
综上所述,本发明所述提供的一种LED检测装置和方法,该LED检测装置,包括:检测电路板100;弹性基板102,所述弹性基板102设置在所述检测电路板100下端,所述弹性基板102远离所述检测电路板100的一面设置有检测电极,所述检测电极与所述检测电路板电连接,所述检测电极正对于待检测LED芯片的电极;以及可填充区101,所述可填充区101设置在所述检测电路板100和所述弹性基板102之间。本发明通过将所述可填充区101进行填充后,以使所述检测电极与所述待检测电极接触,以判断当前检测位置的所述待检测LED芯片是否为电性不良芯片并准确对准LED芯片电极进行通电,从而能够筛选出电性不良的LED芯片,并对不良LED芯片的坐标进行记录,使得减少了后续的检测时间。另外,本申请不需要用探针逐个对芯片基板108上的LED芯片进行通电,即不需要机械式地移动探针位置,一方面,避免了LED芯片被探针戳伤,另一方面,能够准确对准LED芯片电极进行通电,并提高了LED芯片的检测速度。
应当理解的是,本发明的应用不限于上述的举例,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (10)

  1. 一种LED检测装置,其特征在于,包括:
    检测电路板;
    弹性基板,所述弹性基板设置在所述检测电路板下端,所述弹性基板远离所述检测电路板的一面设置有检测电极,所述检测电极与所述检测电路板电连接,所述检测电极正对于待检测LED芯片的电极;以及
    可填充区,所述可填充区设置在所述检测电路板和所述弹性基板之间。
  2. 根据权利要求1所述的LED检测装置,其特征在于,所述检测电极包括:
    电路板P电极,所述电路板P电极正对于所述待检测LED芯片的P电极;
    电路板N电极,所述电路板N电极正对于所述待检测LED芯片的N电极;
    电路板P共电极,所述电路板P电极分别与所述电路板P共电极连接;以及
    电路板N共电极,所述电路板N电极分别与所述电路板N共电极连接。
  3. 根据权利要求2所述的LED检测装置,其特征在于,还包括:芯片基板,所述待检测LED芯片设置在所述芯片基板上。
  4. 根据权利要求3所述的LED检测装置,其特征在于,所述待检测LED芯片包括:
    芯片本体,所述芯片本体设置在所述芯片基板上端面;以及
    待检测电极,所述待检测电极设置在所述芯片本体上端面;
    其中,所述待检测电极包括:
    芯片P电极,所述芯片P电极正对于所述电路板P电极;以及
    芯片N电极,所述芯片N电极正对于所述电路板N电极。
  5. 根据权利要求4所述的LED检测装置,其特征在于,还包括:光接收器,所述光接收器设置在所述芯片基板远离待检测LED芯片一侧。
  6. 根据权利要求5所述的LED检测装置,其特征在于,还包括:多个压力感测组件,所述压力感测组件设置在所述检测电路板的上端面并且每个压力感测组件的位置与所述待检测LED芯片位置对应,用于检测所述检测电路板上与所述待检测LED芯片相 对应的每个位置的压力。
  7. 根据权利要求1至6任一项所述的LED检测装置,其特征在于,所述弹性基板由高分子材料制成,所述高分子材料至少包括聚二甲基硅氧烷、聚酰亚胺和聚甲基丙烯酸甲酯中的一种。
  8. 根据权利要求1至6任一项所述的LED检测装置,其特征在于,所述可填充区填充气体或流体;其中,所述气体为大气或氮气,所述流体为去离子水。
  9. 一种LED检测方法,其特征在于,包括:
    提供一检测电路板和弹性基板,所述检测电路板和所述弹性基板之间设置有可填充区;其中,所述弹性基板远离所述检测电路板的一面设置有检测电极,所述检测电极与所述检测电路板电连接,所述检测电极正对于所述待检测LED芯片的电极;
    将所述可填充区进行填充后,以使所述检测电极与所述待检测LED芯片的电极接触;
    提供一压力感测组件,当所述检测电极与所述待检测LED芯片的电极接触后,若所述压力感测组件显示绿灯,则判定当前检测位置具有所述待检测LED芯片;
    提供一光接收器,当所述光接收器接收到当前检测位置的所述待检测LED芯片发出的光束时,则判定当前位置的所述待检测LED芯片为良性LED芯片。
  10. 根据权利要求9所述的LED检测方法,其特征在于,当所述光接收器没有接收到所述待检测LED芯片发出的光束时,则判定当前位置的所述待检测LED芯片为电性不良的LED芯片。
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CN116544132A (zh) * 2023-07-07 2023-08-04 广东芯乐光光电科技有限公司 Mini-LED贴片检测设备及检测方法

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