WO2021056935A1 - Structure de boîtier d'échelle de puce pour applications de rétroéclairage à haute gamme sensible à l'humidité, et procédé de fabrication - Google Patents

Structure de boîtier d'échelle de puce pour applications de rétroéclairage à haute gamme sensible à l'humidité, et procédé de fabrication Download PDF

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WO2021056935A1
WO2021056935A1 PCT/CN2020/072360 CN2020072360W WO2021056935A1 WO 2021056935 A1 WO2021056935 A1 WO 2021056935A1 CN 2020072360 W CN2020072360 W CN 2020072360W WO 2021056935 A1 WO2021056935 A1 WO 2021056935A1
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parts
chip
inorganic fillers
moisture
transparent
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PCT/CN2020/072360
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Chinese (zh)
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韩颖
谭晓华
刘东顺
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天津德高化成新材料股份有限公司
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Priority to KR1020207018928A priority Critical patent/KR102423795B1/ko
Publication of WO2021056935A1 publication Critical patent/WO2021056935A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
    • B29C37/0067—Using separating agents during or after moulding; Applying separating agents on preforms or articles, e.g. to prevent sticking to each other
    • B29C37/0075—Using separating agents during or after moulding; Applying separating agents on preforms or articles, e.g. to prevent sticking to each other using release sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
    • B29C48/03—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the shape of the extruded material at extrusion
    • B29C48/07—Flat, e.g. panels
    • B29C48/08—Flat, e.g. panels flexible, e.g. films
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
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    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
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    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Definitions

  • the present invention relates to the field of backlights, in particular to a chip-level packaging structure and manufacturing method for moisture-sensitive high-color gamut backlight applications.
  • TFT-LCD thin film transistor liquid crystal display
  • CSP chip-scale package white LEDs as backlight light-emitting elements and has gradually become the mainstream, in order to pursue high color gamut
  • the LED phosphor adopts a combination of KSF fluoride phosphor and ⁇ -SiAlON phosphor with a narrower half-width.
  • KSF phosphors deteriorate due to chemical reactions in water.
  • phosphor manufacturers do phosphor surface passivation treatment, for long-term reliability requirements, simply surface treatment of KSF phosphors cannot prevent the entry of water vapor.
  • the purpose of the present invention is to provide a chip-level packaging structure and manufacturing method, which belongs to a chip-level packaging structure and manufacturing method for moisture-sensitive high-color gamut backlight applications.
  • a chip-scale packaging structure (ie, chip-scale packaging structure) for moisture-sensitive high-color gamut backlight applications. It has a double-layer packaging structure: the inner layer is a fluorescent film containing KSF phosphor; the outer layer is containing inorganic fillers Transparent film.
  • the thickness of the fluorescent film is 30-70um, and the thickness of the transparent film is 50-80um.
  • the manufacturing method of the chip-scale package structure includes the following steps: (1) flip-chip LED chip array on the substrate; (2) vacuum conformal bonding of the five sides of the chip to the fluorescent film containing KSF phosphor; (3) standing along the package body Cut the bottom adhesive film on the surface; (4) The package body after cutting is secondly arrayed on the substrate; (5) The outside of the package body after cutting is vacuum-compressed to encapsulate the transparent silicone film containing micron-level inorganic fillers; (6) After curing, the chip-scale package is cut.
  • the fluorescent film containing KSF phosphor powder is prepared according to the following steps:
  • Step 1 Weigh by mass: 20-99 parts of Dow Corning high-fold silicone encapsulating resin A and B, 1-80 parts of KSF phosphor, 1-80 parts of ⁇ -SiAlON phosphor, and a blender to obtain the mixture. 4; Each part by mass is 1g; preferably Dow Corning high-fold silicone encapsulating resin A and B components total 40-80 parts, KSF phosphor 10-40 parts, ⁇ -SiAlON phosphor 10-50 parts;
  • Step 2 Extruding or coating or calendering the mixture 4 onto the release film to form a uniform thickness of 30-70um adhesive film.
  • the mass percentage of the inorganic filler is 1-60% (that is, the mass of the inorganic filler/the mass of the transparent adhesive film), preferably 10-60%.
  • the transparent adhesive film containing inorganic fillers that is, the transparent adhesive film containing micron-sized inorganic fillers, is prepared according to the following steps:
  • Step 1 Weigh 40-99 parts of high-fold silicone encapsulating resin A and B (such as Dow Corning OE-6650 resin), 1-60 parts of micron-level inorganic fillers (the sum of the two is 100 Parts by mass), after being evenly mixed by a mixer, a kneader or a kneader, mixture 1 is obtained;
  • a and B such as Dow Corning OE-6650 resin
  • micron-level inorganic fillers the sum of the two is 100 Parts by mass
  • Step 2 Extruding or coating or calendering the mixture 1 onto the release film to form a transparent silicone film with a uniform thickness of 50-80um.
  • the transparent adhesive film containing inorganic fillers that is, the transparent adhesive film containing micron-sized inorganic fillers, can also be prepared according to the following steps:
  • Step 1 Weigh by mass: 10-50 parts of phenyl vinyl silicone resin, 1-60 parts of micron-level inorganic fillers, mixed uniformly by a mixer, kneader or kneader to obtain mixture 2;
  • the vinyl content of the phenyl vinyl silicone resin is 0.001% by weight to 15% by weight, and the viscosity is 1,000 to 200,000 mPa.s;
  • Step 2 Weigh by mass: 0.00005 ⁇ 0.001 parts inhibitor, 0.1 ⁇ 5 parts thickener, 3.0 ⁇ 10-4 ⁇ 1.5 ⁇ 10-3 parts of platinum carbohydrate catalyst, and the hydrogen content is 0.1% by weight to 1.6% by weight , Phenyl hydrogen-containing silicone oil with a viscosity of 5-20000 mPa.s, so that the number of moles of Si-H in the phenyl hydrogen-containing silicone oil is 1.01-5 times the number of moles of vinyl in mixture 2;
  • Step 3 Add each component of step 2 to Mix 2 (the total mass of each component is 100 parts by mass), and mix it evenly with a mixer, kneader or kneader to obtain Mix 3.
  • the mixture 3 is extruded or A transparent silicone film with a thickness of 50-80um is prepared by calendering or coating.
  • the manufacturing method of the chip-scale package structure of the present invention is carried out according to the following steps:
  • Step (1) the flip-chip LED chip array is placed on the substrate, and the chip is fixed by a high-temperature adhesive tape with a temperature resistance of more than 200°C, and the number of LED chips (or LED chips) is 1-10,000;
  • step (1) the size of the flip-chip LED chip used is 3535, 4040, 4545 or other size flip-chips with a rated power above 1w.
  • Step (2) the five sides of the chip are vacuum-shaped and bonded to the fluorescent film 12 containing KSF phosphor;
  • the fluorescent film is prepared with Dow Corning A/B two-component silica gel, and the amount of phosphor added is 5-80% by weight (that is, the mass of phosphor/the mass of fluorescent film), which is extruded or calendered Or coating method, prepared into a 30-70um thickness film.
  • Step (3) cutting the bottom adhesive film along the exterior surface of the package obtained in step (2);
  • Step (4) the diced secondary array of the package body is packaged on the substrate, and fixed by a high temperature adhesive tape with a temperature resistance of 200°C or more;
  • Step (5) the package body after the array is vacuum-compressed to encapsulate the (organic silicon) transparent adhesive film containing micron-level inorganic fillers;
  • the (organic silicon) transparent film containing micron-level inorganic fillers can be commercially available A/B two-component silica gel, such as Dow Corning OE-6650A/B, 40-99 parts, 1-60 Parts of micron-level inorganic fillers are uniformly mixed by a mixer, kneader or kneader, and then extruded, calendered or coated to prepare a transparent silicone film with a thickness of 50-80um.
  • A/B two-component silica gel such as Dow Corning OE-6650A/B, 40-99 parts, 1-60 Parts of micron-level inorganic fillers are uniformly mixed by a mixer, kneader or kneader, and then extruded, calendered or coated to prepare a transparent silicone film with a thickness of 50-80um.
  • Step (6) cutting the CSP (chip scale package) package after curing in a 150°C oven to form a single chip scale package light source for moisture-sensitive high color gamut backlight applications.
  • the transparent adhesive film is a kind of hot-melt material, that is, a semi-cured silicone resin prepolymer.
  • KSF phosphor and silica gel are pre-made into ultra-thin fluorescent film (30-70um) on the surface of the chip away from the surface of the package body through double-layer encapsulation, and then prefabricated containing The transparent fluorescent film of micron-level inorganic filler is re-encapsulated.
  • the inorganic filler has excellent moisture resistance and fully protects the KSF phosphor from water vapor.
  • the first two cutting processes in the packaging process are based on the "dry" Method" cutting.
  • the inner ultra-thin structure generates low heat and is easier to conduct to the substrate for heat dissipation
  • the micron-level filler in the outer layer of adhesive film contributes excellent heat resistance, thereby making the overall package structure It has good heat resistance and can be used for high-power devices.
  • the micron-level filler in the outer layer of the adhesive film also increases the hardness of the outer layer of the adhesive film, so that the packaged CSP has a higher hardness, avoids scratches and is easy to operate the sorting machine.
  • Figure 1 is a schematic diagram of the structure of a common five-sided light emitting CSP; 1- flip chip; 2- organic silica gel film with phosphor added; 3- phosphor particles.
  • Figure 2 is a schematic diagram of the chip-scale package structure of the present invention for moisture-sensitive high-color gamut backlight applications; 11-flip chip; 12-fluorescent film containing KSF phosphor; 13-KSF and ⁇ -SiAlON phosphors Combination; 14-silicone transparent adhesive film containing micron-level inorganic fillers; 15-micron-level inorganic fillers.
  • FIG. 3 is a flow chart of the manufacturing method of the chip-scale package structure for moisture-sensitive high-color gamut backlight applications of the present invention.
  • FIG. 1 is a schematic diagram of the structure of a common five-side light emitting CSP in the prior art, and an organic silica gel film with phosphor added is provided outside the flip chip.
  • the chip-level packaging structure of the present invention for moisture-sensitive high-color gamut backlight applications is shown in Figure 2.
  • the fluorescent film 12 containing KSF phosphor is conformally attached to the periphery of the flip chip 11.
  • the thickness of the fluorescent film is It is 30um, 50um, 70um, which contains the phosphor combination 13 of KSF and ⁇ -SiAlON; the outermost layer is the silicone transparent adhesive layer 14 containing micron-level inorganic fillers, and the micron-level inorganic fillers 15 contained therein have moisture resistance. It can fully protect the inner layer of KSF phosphor from being damaged, and the thickness is 80um.
  • Vacuum laminating machine VHP-200, Nitto Precision Circuit Technology (Shenzhen) Co., Ltd.
  • the composition of the fluorescent film used in the test in the following examples is as follows: weigh 20 parts by weight of LF-1112A glue, 20 parts by weight of LF-1112B glue, 40 parts by weight of KR-3K01 phosphor, and 20 parts by weight of GR-MW540K8SD phosphor , After mixing uniformly, it is coated into a fluorescent film with a thickness of 30um.
  • composition of the transparent silicone film containing micron-level transparent fillers used in the following examples is as follows: weigh 39-98 parts by weight of OE-6650A/B, 1 part by weight of DM-30, and 1-60 parts by weight of micron-level inorganic fillers After mixing uniformly, it is coated into a transparent film with a thickness of 80um. )
  • the preparation method of the CSP used in the test in the following examples is as follows: arrange the flip-chip F36A-CB with an MPI arranging machine, then put the adhesive film on the chip and use a vacuum laminator to bond it together, and place it in a stock drying oven 150 After baking at °C for 2hrs, it is cut with a precision dicing machine to become a single CSP.
  • the chip-level packaging structure of the present invention for moisture-sensitive high-color gamut backlight applications is shown in Figure 2.
  • the outermost layer is a silicone transparent adhesive layer 14 containing micron-level inorganic fillers, and the micron-level inorganic fillers 15 contained therein have Anti-moisture performance, can fully protect the inner layer of KSF phosphor from being damaged.
  • Table 1 shows the relationship between the amount of micron-sized inorganic fillers added to the transparent adhesive film and the water absorption.
  • the water absorption test method is as follows: Cut the pre-fabricated transparent film containing micron-level inorganic fillers with different additions with a thickness of 80um into 50mm*20mm strips, weigh M 0 , and immerse it in boiling water for 1 hour.
  • Boiling water absorption rate (M 1 -M 0 )/M 0 *100% (formula)
  • Table 1 The relationship between the addition amount of micron inorganic fillers and water absorption
  • the chip-level packaging structure of the present invention for moisture-sensitive high-color gamut backlight applications is shown in Figure 2.
  • the outermost layer is a silicone transparent adhesive layer 14 containing micron-level inorganic fillers, and the micron-level inorganic fillers 15 contained therein are added
  • the amount is 1-60% by weight, which can increase the hardness of the organic silica gel film to ShoreD70 ⁇ ShoreD80, which can prevent the CSP from scratching and facilitate the sorting operation of the finished CSP.
  • the hardness test was carried out on the prefabricated transparent film with a thickness of 80um containing micron-level inorganic fillers with different additions.
  • the hardness test equipment was ShoreD digital Shore hardness tester, Shanghai Shuangxu Electronics Co., Ltd. Table 2 shows the relationship between the amount of micron inorganic filler added and the hardness. The hardness increases with the addition of micron-sized inorganic fillers.
  • Table 2 The relationship between the added amount of micron-level inorganic fillers and the hardness.
  • the chip-level packaging structure of the present invention for moisture-sensitive high-color gamut backlight applications is shown in Figure 2.
  • the outermost layer is a silicone transparent adhesive layer 14 containing micron-level inorganic fillers, and the micron-level inorganic fillers 15 contained therein have Excellent thermal conductivity and anti-light decay performance, can be used for high-power LED devices above 1W.
  • the following thermal resistance test equipment is T3Ster thermal resistance tester, Shenzhen Maiang Technology Co., Ltd.
  • Table 3 shows the relationship between the amount of micron inorganic filler added and the thermal resistance. The results show that the larger the amount of micron inorganic filler added in the outermost transparent layer, the lower the thermal resistance, that is, the better the thermal conductivity of the product.
  • Table 3 The relationship between the addition amount of micron-level inorganic fillers and thermal resistance
  • the chip-level packaging structure of the present invention for moisture-sensitive high-color gamut backlight applications is shown in Figure 2.
  • the outermost layer is a silicone transparent adhesive layer 14 containing micron-level inorganic fillers, and the micron-level inorganic fillers 15 contained therein can be Improve the light extraction efficiency of CSP products.
  • Table 4 shows the two-layer structure CSP of the present invention (in which 20% by weight of micron-level inorganic fillers are added to the outer transparent adhesive layer) and the ordinary double-layer structure CSP (that is, the CSP encapsulated by the KSF fluorescent layer and the ordinary transparent layer) perform far field optics
  • the comparison result of the test shows that the inner KSF fluorescent layer is exactly the same.
  • the test equipment is LED626 Goniophotometer, Hangzhou Yuzhou Optoelectronics Information Co., Ltd.
  • the test range is C0-180 degrees, that is, the light intensity distribution data from -90 degrees to 90 degrees is tested, and the test interval is 1.0 degrees.
  • the test results show that the double-layer structure CSP of the present invention has higher light efficiency, and the average light intensity diffusion angle is larger, that is, the light output type is better.
  • the particle size of the micron-sized inorganic filler 15 in Fig. 2 is: D10 is 1-3um, D50 is 10-15um, D90 is 40-50um, and D97 is 60-70um.
  • D10 is 1-3um
  • D50 is 10-15um
  • D90 is 40-50um
  • D97 is 60-70um.
  • the particle size is too large, the surface of the prefabricated film has bumps caused by large phosphor particles, and the surface is not smooth after being packaged into a csp, which will seriously affect the color temperature consistency of the csp package; if the particle size is too small, it will increase the hardness , Moisture resistance, heat resistance and other performance effects are not obvious.
  • the addition amount of the micron-sized inorganic filler 15 as shown in FIG. 2 is 1-60% by weight, preferably 10-50% by weight. Because when the addition amount is less than 10%, its effect on moisture resistance, hardness, heat resistance and anti-light decay is not obvious; and when the addition amount is higher than 50%, the viscosity of the entire silicone system is too high (> 50000mPa.s) ), it is difficult to prefabricate the film.
  • the phosphor combination of KSF and ⁇ -SiAlON added is DENKA Nippon Denki-Shanghai Dadu (Headquarters) which provided.
  • FIG. 3 The flow chart of the manufacturing method of the chip-scale package structure for moisture-sensitive high-color gamut backlight applications of the present invention is shown in Fig. 3, and the manufacturing method includes the following steps:
  • the flip-chip LED chip array is placed on the substrate, and the chip is fixed by a high-temperature adhesive tape with a temperature resistance of 200°C or more;
  • the CSP (chip scale package) package is cut to form a single chip scale package light source for moisture-sensitive high color gamut backlight applications.
  • Step (1) The size of the flip-chip LED chip used is 3535, 4040, 4545 or other size flip-chips with a rated power above 1w.
  • the fluorescent film containing KSF fluorescent powder used in step (2) is prepared with Dow Corning A/B two-component silica gel, and the fluorescent powder is added in an amount of 5-80% by weight, and prepared by extrusion, calendering or coating. Into a 30-70um thickness film.
  • the transparent silicone film containing micron-level inorganic fillers used in step (5) can be commercially available A/B two-component silica gel, such as Dow Corning OE-6650A/B, 40-99 parts, 1-60 parts micron-level inorganic fillers After being uniformly mixed by a mixer, a mixer or a kneader, a transparent silicone film with a thickness of 50-80um is prepared by extrusion, calendering or coating.
  • the CSP product prepared by the present invention and the single-layer adhesive film common five-sided CSP package and the double-layer package CSP product containing the KSF fluorescent layer and the common transparent layer were subjected to a 1000-hour lighting aging test.
  • the comparison results are shown in Table 5.
  • the chips used are all 55*55mil, the lighting voltage is 3V, and the current is 1500mA.
  • the smaller the change values ⁇ X and ⁇ Y of CIE X and CIE Y the better the product performance. After lighting for 1000 hours, place it in red ink at 100°C for 2 hours, and then observe whether there is red ink infiltrated into the packaging adhesive layer. If there is, it indicates poor performance; if not, it indicates good performance.
  • test result is that both the ordinary single-layer five-sided CSP and the ordinary double-layer structure CSP (that is, the CSP encapsulated by the KSF fluorescent layer and the ordinary transparent layer) have red ink infiltration in the surface encapsulation glue layer, and the double-layer structure CSP of the present invention (in which the outside There is no red ink in the surface encapsulation layer where 20% by weight of micron-level inorganic filler is added to the transparent adhesive layer.
  • the CSP package prepared by the example has excellent moisture resistance, heat resistance and light decay resistance, and has higher hardness and light extraction efficiency, and is suitable for moisture-sensitive high-color gamut backlight applications.
  • the chip packaging structure of the present invention can be realized, and the performance is basically consistent with that of the present invention.
  • the present invention has been exemplarily described above. It should be noted that, without departing from the core of the present invention, any simple deformation, modification or other equivalent substitutions that can be made by those skilled in the art without any creative effort fall into the present invention. The scope of protection of the invention.

Abstract

L'invention concerne une structure de boîtier d'échelle de puce (CSP) pour des applications de rétroéclairage à haute gamme sensible à l'humidité, ayant une structure d'emballage à double couche : la couche interne est un film de colle fluorescente contenant une poudre fluorescente de KSF, et la couche externe est un film de colle transparent contenant une charge inorganique. Tout d'abord, un réseau de puces de DEL est monté de manière inverse sur un substrat ; d'autre part, le film de colle fluorescente contenant la poudre fluorescente KSF est fixé aux puces d'une manière conforme au vide à cinq côtés ; puis le film de colle au fond est coupé le long d'une élévation externe d'un corps d'emballage, puis le corps d'emballage coupé est soumis à un réseau secondaire sur le substrat, et une surface extérieure du corps d'emballage coupé emballe le film de colle de silicone transparent contenant la charge inorganique de taille micrométrique par pressage sous vide ; enfin, le corps de boîtier CSP est coupé après durcissement. La présente invention présente une excellente résistance à l'humidité, une dureté élevée, une conduction thermique et une résistance à la dégradation de la lumière, et peut être utilisée pour un dispositif à DEL haute puissance pour améliorer la performance globale du corps d'emballage CSP fini.
PCT/CN2020/072360 2019-09-25 2020-01-16 Structure de boîtier d'échelle de puce pour applications de rétroéclairage à haute gamme sensible à l'humidité, et procédé de fabrication WO2021056935A1 (fr)

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