WO2021031105A1 - 压电式 mems 麦克风 - Google Patents

压电式 mems 麦克风 Download PDF

Info

Publication number
WO2021031105A1
WO2021031105A1 PCT/CN2019/101516 CN2019101516W WO2021031105A1 WO 2021031105 A1 WO2021031105 A1 WO 2021031105A1 CN 2019101516 W CN2019101516 W CN 2019101516W WO 2021031105 A1 WO2021031105 A1 WO 2021031105A1
Authority
WO
WIPO (PCT)
Prior art keywords
diaphragm
piezoelectric
mems microphone
annular base
support
Prior art date
Application number
PCT/CN2019/101516
Other languages
English (en)
French (fr)
Inventor
段炼
张睿
陈志远
Original Assignee
瑞声声学科技(深圳)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞声声学科技(深圳)有限公司 filed Critical 瑞声声学科技(深圳)有限公司
Publication of WO2021031105A1 publication Critical patent/WO2021031105A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/06—Plane diaphragms comprising a plurality of sections or layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/16—Mounting or tensioning of diaphragms or cones
    • H04R7/18—Mounting or tensioning of diaphragms or cones at the periphery
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the invention relates to the technical field of acoustic-electric conversion devices, in particular to a piezoelectric MEMS microphone.
  • MEMS microphone is an electro-acoustic transducer made by micro-machining technology, which has the characteristics of small size, good frequency response characteristics, and low noise. With the development of electronic devices toward compactness and thinness, MEMS microphones are increasingly used in these devices.
  • MEMS microphones are mainly divided into capacitive MEMS microphones and piezoelectric MEMS microphones.
  • Piezoelectric MEMS microphones have many advantages over traditional capacitive MEMS microphones, including dust resistance, water resistance, and higher maximum output sound pressure (AOP).
  • AOP maximum output sound pressure
  • the piezoelectric diaphragm of the piezoelectric MEMS microphone is composed of multiple diaphragms. One end of each diaphragm is connected to the substrate, and the other end adopts a cantilever beam structure.
  • the diaphragm when the diaphragm is subjected to reliability tests such as drop and air blowing, it is susceptible to impact force.
  • the piezoelectric diaphragm is prone to large deformations. Due to the material strength of the piezoelectric diaphragm, the diaphragm may break, Irreversible damage such as breakage greatly affects the stability of the piezoelectric MEMS microphone.
  • the purpose of the present invention is to provide a piezoelectric MEMS microphone with better stability.
  • the present invention provides a piezoelectric MEMS microphone, including a substrate with a cavity, a piezoelectric diaphragm mounted on the substrate, and a limiter arranged outside the piezoelectric diaphragm ,
  • the base includes an annular base, a support column arranged inside the annular base and spaced apart from the annular base, the piezoelectric diaphragm includes a plurality of diaphragms, each of the diaphragms includes a support column connected The fixed end and the free end suspended above the cavity, the limiting member includes a spaced apart from the piezoelectric diaphragm to limit the free end in the vibration direction of the diaphragm A limiting portion and an edge fixing plate connected to the outer edge of the limiting portion and installed on the annular base, and the limiting portion is provided with a plurality of first through holes arranged opposite to the cavity.
  • the base further includes a plurality of support beams, one end of the support beam is connected to the support column, and the other end is connected to the annular base, thereby dividing the cavity into a plurality of sub-cavities.
  • the piezoelectric diaphragm is an integrated structure, and the piezoelectric diaphragm extends from its outer edge to the center of the piezoelectric diaphragm with an air-permeable slit.
  • the electric diaphragm is divided into the diaphragm.
  • the limiting portion includes a limiting plate extending from a side of the edge fixing plate away from the annular base toward the supporting column, and the limiting plate covers part of the free end.
  • the limiting portion further includes an intermediate fixing plate connected with the supporting column and a plurality of supporting plates arranged directly opposite to the supporting beams, each of the supporting plates One end is connected to the limiting plate, the other end is connected to the intermediate fixing plate, each of the support plates covers a part of the free end, the intermediate fixing plate, two adjacent support plates and the limiting plate The position plate is partially enclosed to form the first through hole.
  • a baffle is provided above each diaphragm, between the intermediate fixing plate and the limiting plate, one end of the baffle is connected to the intermediate fixing plate, and the other end is connected to the intermediate fixing plate.
  • the limit plate is connected; or,
  • a baffle is provided above each of the diaphragms and between two adjacent support plates. One end of the baffle is connected to one support plate, and the other end is connected to another adjacent support plate. connection.
  • the piezoelectric MEMS microphone further includes a spacer arranged between the base and the piezoelectric diaphragm, and the spacer includes an edge fixing ring arranged along the extending direction of the annular base.
  • the inner side of the edge fixing pad and the annular base form a base avoidance area, and the projection of the outer edge of the piezoelectric diaphragm on the base is located in the projection of the outer edge of the base avoidance area on the base .
  • the gasket further includes a plurality of support pads respectively laid along the plurality of support beams, and the two sides of the support pad along the axial direction respectively form a support beam avoidance area with the support beam, The side of the free end covers the retreat area of the support beam.
  • the gasket further includes an intermediate fixing pad arranged between the intermediate fixing plate and the support column, one end of the support pad is connected to the edge fixing pad, and the other end is connected to the The middle fixing pad is connected, and the middle fixing pad, the two adjacent supporting pads, and the edge fixing pad are partially enclosed to form a second through hole corresponding to the sub-cavity.
  • the piezoelectric MEMS microphone further includes a constraining member, one end of the constraining member is connected to the free end, and the other end is connected to the annular base or the limiting member or the gasket .
  • the diaphragm when the diaphragm is deformed upward under the action of impact force, it is limited by the protection of the limiter structure, and the deformation of the diaphragm can be controlled.
  • the sheet is protected to prevent the diaphragm from breaking, thereby increasing the stability of the piezoelectric MEMS microphone.
  • FIG. 1 is a perspective view of a piezoelectric MEMS microphone provided by an embodiment of the present invention
  • Figure 2 is an exploded view of a piezoelectric MEMS microphone provided by an embodiment of the present invention
  • FIG. 3 is a top view of a piezoelectric MEMS microphone provided by an embodiment of the present invention.
  • Figure 4 is a cross-sectional view at A-A in Figure 3;
  • Fig. 5 is a partial enlarged schematic diagram of B in Fig. 4;
  • Fig. 6 is a partial enlarged schematic diagram of C in Fig. 4;
  • Figure 7 is a perspective view of a substrate provided by an embodiment of the present invention.
  • FIG. 8 is a perspective view of a restraint provided on a piezoelectric diaphragm according to an embodiment of the present invention.
  • Fig. 9 is a partial enlarged schematic diagram of D in Fig. 8.
  • Figure 10 is a perspective view of a limiting member provided by an embodiment of the present invention.
  • FIG. 11 is a partial top view 1 of the baffle provided on the limiting member according to an embodiment of the present invention.
  • FIG. 12 is a partial top view 2 of the baffle provided on the limiting member according to the embodiment of the present invention.
  • Fig. 13 is a perspective view of a gasket provided by an embodiment of the present invention.
  • an element when an element is referred to as being “fixed on” or “disposed on” another element, the element may be directly on the other element or there may be a centering element at the same time.
  • an element When an element is referred to as being “connected” to another element, it can be directly connected to the other element or an intermediate element may also exist.
  • an embodiment of the present invention provides a piezoelectric MEMS microphone.
  • the piezoelectric MEMS microphone includes a substrate 10 with a cavity 11, a piezoelectric diaphragm 20 mounted on the substrate 10, and a cover
  • the limiter 30 is arranged outside the piezoelectric diaphragm 20.
  • a number of first through holes 311 are opened on the limiter 30.
  • the external sound signal is introduced from the sound hole and enters the piezoelectric type through the first through hole 311.
  • the sound pressure causes the piezoelectric diaphragm 20 to deform, resulting in a voltage change, thereby perceiving an acoustic signal.
  • the diaphragm 21 in the piezoelectric diaphragm 20 deforms greatly upward under the action of the impact force, it is limited by the protection of the structure of the limit member 30, and the deformation of the diaphragm 21 can be controlled to protect the diaphragm 21. , To prevent the diaphragm 21 from breaking, thereby increasing the stability of the piezoelectric MEMS microphone.
  • the base 10 includes an annular base 12, a support column 13 arranged inside the annular base 12 and spaced apart from the annular base 12, and a plurality of support beams 14 arranged at intervals along the circumference of the support column 13, supporting One end of the beam 14 is connected to the supporting column 13, and the other end of the supporting beam 14 is connected to the annular base 12 to divide the cavity 11 into a plurality of sub-cavities 15 arranged at intervals along the circumferential direction of the supporting column 13.
  • the ring base 12 may be a 360-degree closed ring, or it may not be a complete ring.
  • the piezoelectric diaphragm 20 is an integrated structure.
  • the piezoelectric diaphragm 20 extends from its outer edge to the center of the piezoelectric diaphragm 20 with a breathable slit 22 that separates the piezoelectric diaphragm 20. ⁇ 21 ⁇ The film 21.
  • the piezoelectric diaphragm 20 includes a plurality of diaphragms 21 and a plurality of supporting portions 23 respectively laid along a plurality of supporting beams 14.
  • Each diaphragm 21 includes a fixed end 211 connected to the supporting column 13 and a fixed end 211 Connected and suspended on the free end 212 above the subcavity 15, each diaphragm 21 in this embodiment shares a fixed end 211.
  • the specific structure of the fixed end 211 and the diaphragm 21 is not limited, and the piezoelectric diaphragm 20
  • the symmetry of the overall structure is also not limited.
  • the diaphragm 21 can be a symmetrical or asymmetrical polygon.
  • the side edge of the diaphragm 21 can be a straight line or a curve.
  • One end of the supporting portion 23 is connected to the fixed end 211, and two adjacent ones are connected.
  • a supporting portion 23 is provided between the diaphragm 21, and the supporting portion 23 and the free end 212 are spaced apart, and the above-mentioned ventilation slit 22 is formed between the supporting portion 23 and the free end 212 of the diaphragm 21.
  • the size of the free end 212 on the diaphragm 21 along the circumference of the support column 13 gradually increases from the fixed end 211 toward the annular base 12, so that under the action of sound pressure, the free end 212 drives the diaphragm 21 vibrates, and the part of the diaphragm 21 close to the fixed end 211 undergoes greater deformation under the action of the force and generates more electric charges. Therefore, its sensitivity can be further improved.
  • the number of sub-cavities 15 corresponds to the number of diaphragms 21, a free end 212 is suspended above each sub-cavity 15, and the projection profile of the inner side wall of the ring base 12 in the direction perpendicular to the diaphragm 21 can be It is circular or polygonal.
  • the number of support beams 14 can be set according to actual needs. The specific number is not limited.
  • the support beam 14 The number of can be less than, equal to, or greater than the number of vertices of the polygon. It should be noted that two or more free ends 212 may also be suspended above each sub-cavity 15, which may be specifically determined according to actual design requirements.
  • the limiting member 30 includes a limiting portion 31 that is spaced apart from the piezoelectric diaphragm 20 to limit the free end 212 in the vibration direction of the diaphragm 21, and a limiting portion 31 and The outer edge of the position portion 31 is vertically connected to the edge fixing plate 32 installed on the annular base 12. Since the edge fixing plate 32 is connected to the base 10, the strength of the stopper 30 itself can also be improved.
  • the first through hole 311 is provided on the limiting portion 31 and is arranged directly opposite to each sub-cavity 15.
  • the limiting portion 31 includes a limiting plate 312 extending from the side of the edge fixing plate 32 away from the annular base 12 toward the supporting column 13, an intermediate fixing plate 313 connected to the supporting column 13, and several The supporting beams 14 are arranged one by one with a supporting plate 314 and several baffles 315 arranged at intervals.
  • the limiting plate 312 is preferably a ring structure
  • the supporting plate 314 is preferably a strip structure
  • the limiting plate 312 covers a part The free end 212, one end of each support plate 314 is connected to the limiting plate 312, and the other end is connected to the intermediate fixing plate 313, and each support plate 314 covers a part of the free end 212.
  • the middle fixing plate 313, the two adjacent support plates 314 and the limiting plate 312 are partially enclosed to form a first through hole 311, and at least one stopper is suspended above each diaphragm 21, between the middle fixing plate 313 and the limiting plate 312
  • One end of the baffle plate 315 is connected to the intermediate fixing plate 313, and the other end of the baffle plate 315 is connected to the limiting plate 312.
  • a baffle 315 may also be provided between two adjacent support plates 314, one end of the baffle 315 is connected to one support plate 314, and the other end of the baffle 315 is connected to another adjacent support plate 314, or other
  • the configuration structure of the baffle 315 in practical applications, the specific structure of the limiting member 30 can be designed according to actual needs.
  • the piezoelectric MEMS microphone further includes a spacer 40 arranged between the base 10 and the piezoelectric diaphragm 20, and the spacer 40 includes an edge fixing ring arranged along the extending direction of the annular base 12.
  • the projection of the outer edge of the piezoelectric diaphragm 20 on the base 10 is located within the projection of the outer edge of the base avoidance area 50 on the base 10, and the side of the free end 212 away from the fixed end 211 covers the base avoidance area 50, so as to The diaphragm 21 vibrates downward for restraint.
  • the support pad 42 is installed on the support beam 14.
  • the two sides of the support pad 42 along its axial direction and the support beam 14 respectively form a support beam avoidance area 60.
  • the side of the free end 212 covers the support beam avoidance area 60.
  • the middle fixing pad 43 is arranged between the fixing end 211 and the support column 13, one end of the support pad 42 is connected to the edge fixing pad 41, the other end of the support pad 42 is connected to the middle fixing pad 43, and the middle fixing pad 43 and the two supporting pads 42 and the edge fixing pad 41 are partially enclosed to form a second through hole 44 corresponding to the sub-cavity 15.
  • the vibration of the piezoelectric diaphragm 20 is restrained from the upper and lower directions.
  • the piezoelectric diaphragm 20 has a gap of 1 ⁇ 2um from the bottom surface of the limiting portion 31 and the top surface of the substrate 10. The deformation of this gap affects the diaphragm 21
  • the free end 212 is within the fracture deformation.
  • the design of the limiter 30 is determined by the structure of the piezoelectric diaphragm 20. Any structure that protects and restricts the piezoelectric diaphragm 20 from swinging upward is within the protection scope of this patent.
  • the limiting member 30 can protect and limit one or more edges of the diaphragm 21, and can also protect the entire surface of the piezoelectric diaphragm 20.
  • the design of the piezoelectric diaphragm 20 in this embodiment is determined by the structure of the sub-cavity 15 and the structure of the spacer 40. Without affecting the performance, the design of the sub-cavity 15 can be based on the protection of the diaphragm 21. It is not limited to the design of this embodiment.
  • the piezoelectric MEMS microphone further includes a restraining member 70, one end of the restraining member 70 is connected to the free end 212, and the other end of the restraining member 70 is connected to the ring base 12 or the limiting member 30 or pad
  • the sheet 40 is connected, and the restraining member 70 can prevent the residual stress in the diaphragm 21 from causing different degrees of edge warping, involution, etc., to prevent the diaphragm 21 from having differences in low-frequency attenuation.
  • the deformation of 21 is constrained, thereby improving the resonance frequency of the piezoelectric diaphragm 20 and reducing the noise of the entire piezoelectric MEMS microphone.
  • the resonance frequency can generally reach 35kHz or more, but the sensitivity is significantly reduced ( ⁇ -44dB).
  • the restraint 70 here can be replaced with a rigid restraint according to actual needs.
  • the restraining member 70 is an elastic restraining member.
  • the restraining member 70 includes a protruding portion 71, a fixed post 72, and an elastic arm 73.
  • the protruding portion 71 is connected to the free end 212 of the diaphragm 21, and the fixed post 72 is connected to the annular base. 12 or the limiting member 30 or the gasket 40 are connected, specifically, the fixing post 72 is connected with the annular base 12.
  • One end of the elastic arm 73 is connected to the protrusion 71, and the other end of the elastic arm 73 is connected to the fixed post 72.
  • the elastic arm 73 includes a first arm 731, a second arm 732, and an arc-shaped connecting arm 733.
  • the arm 731 is connected to the protrusion 71
  • the second arm 732 is connected to the fixed post 72
  • one end of the arc-shaped connecting arm 733 is connected to the first arm 731
  • the other end of the arc-shaped connecting arm 733 is connected to the second arm 732
  • the first arm 731 and the second arm 732 are arranged in parallel, so that the restraining member 70 has elasticity.
  • each diaphragm 21 is connected to two restraining members 70, and one restraining member 70 is provided at both ends of the diaphragm 21 facing the annular base 12 so as to make the diaphragm 21 more stable when vibrating.
  • the elastic coefficient of the constraining member 70 can be adjusted through the design of the piezoelectric diaphragm 20, thereby affecting the resonance frequency, sensitivity, and noise floor of the piezoelectric MEMS microphone.
  • the elastic coefficient of the restraining member 70 increases, the restraining effect is stronger, the resonance frequency will be significantly increased, the noise will be reduced, but the sensitivity will be reduced; on the contrary, the elastic coefficient will be reduced, the restraining effect will become weaker, the resonance frequency will be reduced, but the sensitivity will be significantly improved.
  • the design should be based on the required sensitivity, signal-to-noise ratio and resonance frequency of the product.
  • the restraining member 70 can effectively release the residual stress formed by the diaphragm 21 during the processing process, and the warpage deformation of the diaphragm 21 can be better controlled.
  • the maximum deformation is less than 50nm. The low-frequency attenuation of piezoelectric MEMS microphones can be ignored.
  • the specific design of the restraint member 70 is not limited, and any structure that can play the role of elastic connection and restraint is within the scope of this patent.
  • the number, position, and symmetry of the constraining member 70 are not limited, and can be determined by the design of the cantilever diaphragm 21 and the parameter requirements of the piezoelectric MEMS microphone.
  • any design with one end connected to the base 10 and one end connected to the free vibration end of the diaphragm 21 is within the scope of this patent.
  • the free end 212 may be all sides except the fixed end 211, including long sides and side sides.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Micromachines (AREA)

Abstract

本发明提供一种压电式MEMS麦克风，包括具有腔体的基底、安装于基底上的压电振膜以及罩设于压电振膜外的限位件，基底包括环形底座、设于环形底座内侧并与环形底座间隔设置的支撑柱，压电振膜包括多个膜片，每个膜片包括与支撑柱连接的固定端和悬置于腔体上方的自由端，限位件包括与压电振膜间隔设置以对自由端在膜片的振动方向上形成限位的限位部以及与限位部的外边缘相连接并安装在环形底座上的边缘固定板，限位部设有若干个与腔体相对设置的第一通孔。本发明通过在压电式MEMS麦克风上设置限位件，在冲击力的作用下当膜片向上发生较大形变时，可以控制膜片形变，对膜片进行保护，防止膜片折断，从而增加压电式MEMS麦克风的稳定性。

Description

压电式MEMS麦克风 技术领域
本发明涉及声电转换装置技术领域,具体涉及一种压电式MEMS麦克风。
 背景技术
MEMS麦克风是一种用微机械加工技术制作出来的电声换能器，其具有 体积小、频响特性好、噪声低等特点。随着电子设备朝向小巧化、薄型化发展，MEMS麦克风被越来越广泛地运用到这些设备上。
目前，MEMS麦克风主要分为电容式MEMS麦克风和压电式MEMS麦克风。压电式MEMS麦克风相比于传统的电容式MEMS麦克风具有很多优势，包括防尘性、防水性以及较高的最大输出声压（AOP）等。不同于电容式麦克风的压电振膜结构，压电式MEMS麦克风的压电振膜由多个膜片组成，每个膜片一端与基底相连，另一端采用了悬臂梁结构。
但是，膜片在进行跌落、吹气等可靠性测试时, 容易受到冲击力的作用, 压电振膜易发生较大形变, 受限于压电振膜的材料强度，膜片会发生折断、破损等不可逆破坏，极大的影响了压电式MEMS麦克风的稳定性。
因此，为了增强压电式MEMS麦克风的稳定性，有必要提供一种新的压电式MEMS麦克风，对膜片进行保护，以解决上述问题。
 技术问题
本发明的目的在于提供一种稳定性更好的压电式MEMS麦克风。
 技术解决方案
本发明的技术方案如下：
为实现上述目的，本发明提供了一种压电式MEMS麦克风，包括具有腔体的基底、安装于所述基底上的压电振膜以及罩设于所述压电振膜外的限位件，所述基底包括环形底座、设于所述环形底座内侧并与所述环形底座间隔设置的支撑柱，所述压电振膜包括多个膜片，每个所述膜片包括与支撑柱连接的固定端和悬置于所述腔体上方的自由端，所述限位件包括与所述压电振膜间隔设置以对所述自由端在所述膜片的振动方向上形成限位的限位部以及与所述限位部的外边缘相连接并安装在所述环形底座上的边缘固定板，所述限位部设有若干个与所述腔体相对设置的第一通孔。
作为一种改进方式，所述基底还包括若干个支撑梁，所述支撑梁的一端与所述支撑柱连接、另一端与所述环形底座连接从而将所述腔体分隔成若干个子腔体。
作为一种改进方式，所述压电振膜为一体式结构，所述压电振膜自其外边缘向所述压电振膜的中心延伸设有透气缝，所述透气缝将所述压电振膜分隔成所述膜片。
作为一种改进方式，所述限位部包括从所述边缘固定板远离所述环形底座的一侧朝向所述支撑柱方向延伸的限位板，所述限位板覆盖部分所述自由端。
作为一种改进方式，所述限位部还包括与所述支撑柱相连接的中间固定板以及若干个分别与所述若干个支撑梁一一正对设置的支撑板，每个所述支撑板的一端与所述限位板连接、另一端与所述中间固定板连接，每个所述支撑板覆盖部分所述自由端，所述中间固定板、相邻两所述支撑板和所述限位板部分围合形成所述第一通孔。
作为一种改进方式，每个所述膜片的上方、所述中间固定板和所述限位板之间设有挡板，所述挡板的一端与所述中间固定板连接、另一端与所述限位板连接；或者，
每个所述膜片的上方、两相邻的所述支撑板之间设有挡板，所述挡板的一端与一个所述支撑板连接、另一端与相邻的另一个所述支撑板连接。
作为一种改进方式，所述压电式MEMS麦克风还包括设于所述基底与所述压电振膜之间的垫片，所述垫片包括沿所述环形底座延伸方向环设的边缘固定垫，所述边缘固定垫的内侧与所述环形底座形成底座避让区，所述压电振膜外边缘在所述基底上的投影位于所述底座避让区外边缘在所述基底上的投影内。
作为一种改进方式，所述垫片还包括若干个分别沿所述若干个支撑梁铺设的支撑垫，所述支撑垫沿其轴向的两侧分别与所述支撑梁形成支撑梁避让区，所述自由端的侧部覆盖所述支撑梁避让区。
作为一种改进方式，所述垫片还包括设于所述中间固定板与所述支撑柱之间的中间固定垫，所述支撑垫的一端与所述边缘固定垫连接、另一端与所述中间固定垫连接，且所述中间固定垫、相邻两所述支撑垫以及所述边缘固定垫部分围合形成与所述子腔体相对应的第二通孔。
作为一种改进方式，所述压电式MEMS麦克风还包括约束件，所述约束件的一端与所述自由端连接、另一端与所述环形底座或所述限位件或所述垫片连接。
 有益效果
本发明的有益效果在于：
本发明通过在压电式MEMS麦克风上设置限位件，在冲击力的作用下当膜片向上发生较大形变时，受限于限位件结构的保护，可以控制膜片的形变，对膜片进行保护，防止膜片折断，从而增加了压电式MEMS麦克风的稳定性。
 附图说明
图1为本发明实施例提供的压电式MEMS麦克风的立体图；
图2为本发明实施例提供的压电式MEMS麦克风的爆炸图；
图3为本发明实施例提供的压电式MEMS麦克风的俯视图；
图4为图3中A-A处的剖视图；
图5为图4中B处的局部放大示意图；
图6为图4中C处的局部放大示意图；
图7为本发明实施例提供的基底的立体图；
图8为本发明实施例提供的约束件设于压电振膜上的立体图；
图9为图8中D处的局部放大示意图；
图10为本发明实施例提供的限位件的立体图；
图11为本发明实施例提供的挡板设于限位件上的部分俯视图一；
图12为本发明实施例提供的挡板设于限位件上的部分俯视图二；
图13为本发明实施例提供的垫片的立体图。
图中：10、基底；11、腔体；12、环形底座；13、支撑柱；14、支撑梁；15、子腔体；20、压电振膜；21、膜片；211、固定端；212、自由端； 22、透气缝；23、支撑部；30、限位件；31、限位部；311、第一通孔；312、限位板；313、中间固定板；314、支撑板；315、挡板；32、边缘固定板；40、垫片；41、边缘固定垫；42、支撑垫；43、中间固定垫； 44、第二通孔；50、底座避让区；60、支撑梁避让区；70、约束件；71、凸出部；72、固定柱；73、弹性臂；731、第一支臂；732、第二支臂；733、弧形连接臂。
 本发明的实施方式
下面结合附图和实施方式对本发明作进一步说明。
需要说明的是，本发明实施例中所有方向性指示（诸如上、下、内、外、顶部、底部……）仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
还需要说明的是，当元件被称为“固定于”或“设置于”另一个元件上时，该元件可以直接在另一个元件上或者可能同时存在居中元件。当一个元件被称为“连接”另一个元件，它可以是直接连接另一个元件或者可能同时存在居中元件。
请参阅图1至图13，本发明的实施例提供了一种压电式MEMS麦克风，压电式MEMS麦克风包括具有腔体11的基底10、安装于基底10上的压电振膜20以及罩设于压电振膜20外的限位件30，限位件30上开设有若干个第一通孔311，外部的声音信号从声孔中传入，由第一通孔311进入压电式MEMS麦克风内，声压引起压电振膜20形变，产生电压变化，从而感知声学信号。同时，在冲击力的作用下当压电振膜20中膜片21向上发生较大形变时，受限于限位件30结构的保护，可以控制膜片21的形变，对膜片21进行保护，防止膜片21折断，从而增加了压电式MEMS麦克风的稳定性。
请参阅图1至图7，基底10包括环形底座12、设于环形底座12内侧并与环形底座12间隔设置的支撑柱13以及若干个沿支撑柱13的周向间隔设置的支撑梁14，支撑梁14的一端与支撑柱13连接，支撑梁14的另一端与环形底座12连接从而将腔体11分隔成若干个沿支撑柱13的周向间隔设置的子腔体15，本实施例中的环形底座12可以是一个360度封闭的环形，也可以不是一个完整的环形。
请进一步参阅图8，压电振膜20为一体式结构，压电振膜20自其外边缘向压电振膜20的中心延伸设有透气缝22，透气缝22将压电振膜20分隔成膜片21。具体地，压电振膜20包括多个膜片21以及若干个分别沿若干个支撑梁14铺设的支撑部23，每个膜片21包括与支撑柱13连接的固定端211和与固定端211连接并悬置于子腔体15上方的自由端212，本实施例中各膜片21共用一个固定端211，固定端211和膜片21的具体结构不做限制，且压电振膜20的整体结构的对称性也不做限制，膜片21可以是对称或者非对称的多边形，膜片21的侧边缘可以是直线也可以是曲线，支撑部23的一端与固定端211连接，相邻两膜片21之间设有一个支撑部23，支撑部23与自由端212为间隔设置，支撑部23与膜片21的自由端212之间形成上述透气缝22。
作为优选地实施方式，膜片21上的自由端212沿支撑柱13的周向上的尺寸从固定端211朝向环形底座12逐渐增大，这样，在声压的作用下，自由端212带动膜片21发生振动，靠近固定端211的膜片21部分在力的作用下发生更大的形变进而产生较多的电荷，因此，其灵敏度可以进一步提高。
本实施例中子腔体15的数量与膜片21的数量对应，每个子腔体15的上方悬置一个自由端212，环形底座12的内侧壁在垂直于膜片21方向上的投影轮廓可以为圆形或者多边形，支撑梁14的数量可根据实际需要进行设置，具体的数量不做限制，当环形底座12的内侧壁在垂直于膜片21方向上的投影轮廓为多边形时，支撑梁14的数量可以小于、等于或者大于多边形的顶点数。需要说明的是，每个子腔体15的上方也可以悬置两个或者两个以上的自由端212，具体根据实际设计需要而定。
进一步参阅图10至图12，本实施例中，限位件30包括与压电振膜20间隔设置以对自由端212在膜片21的振动方向上形成限位的限位部31以及与限位部31的外边缘垂直相连接并安装在环形底座12上的边缘固定板32，由于边缘固定板32是连接在基底10上，因此，限位件30本身的强度也能得到提升，若干个第一通孔311设于限位部31上并与各子腔体15正对设置。
具体地，限位部31包括从边缘固定板32远离环形底座12的一侧朝向支撑柱13方向延伸的限位板312、与支撑柱13相连接的中间固定板313、若干个分别与若干个支撑梁14一一正对设置的支撑板314以及若干个间隔设置的挡板315，本实施例中限位板312优选为环形结构，支撑板314优选为条形结构，限位板312覆盖部分自由端212，每个支撑板314的一端与限位板312连接、另一端与中间固定板313连接，每个支撑板314覆盖部分自由端212，在冲击力的作用下当膜片21向上发生较大形变时，受限于限位部31结构的保护，可以控制膜片21的形变，对膜片21进行保护。
中间固定板313、相邻两支撑板314和限位板312部分围合形成第一通孔311，每个膜片21的上方、中间固定板313和限位板312之间悬置至少一个挡板315，挡板315的一端与中间固定板313连接，挡板315的另一端与限位板312连接。当然，两相邻的支撑板314之间也可以设有挡板315，挡板315的一端与一个支撑板314连接，挡板315的另一端与相邻的另一个支撑板314连接，或者其他挡板315的设置结构，在实际应用中，限位件30的具体结构可以由实际需要进行设计。
进一步参阅图13，作为优选地实施方式，压电式MEMS麦克风还包括设于基底10与压电振膜20之间的垫片40，垫片40包括沿环形底座12延伸方向环设的边缘固定垫41、若干个分别沿若干个支撑梁14铺设的支撑垫42以及设于固定端211与支撑柱13之间的中间固定垫43，中间固定板313之朝向固定端211的一侧高于挡板315，以便于中间固定板313能抵接于固定端211，边缘固定垫41安装于环形底座12上，且边缘固定垫41之靠近自由端212的一侧（内侧）与环形底座12形成底座避让区50，压电振膜20外边缘在基底10上的投影位于底座避让区50外边缘在基底10上的投影内，自由端212远离固定端211的一侧覆盖底座避让区50，以对膜片21向下振动进行约束。支撑垫42安装于支撑梁14上，支撑垫42之沿其轴向的两侧分别与支撑梁14形成支撑梁避让区60，自由端212的侧部覆盖支撑梁避让区60，当膜片21向下发生较大形变时，自由端212的边缘会与底座避让区50或/和支撑梁避让区60发生接触，防止膜片21进一步变形，对膜片21进行保护。
中间固定垫43设于固定端211与支撑柱13之间，支撑垫42的一端与边缘固定垫41连接，支撑垫42的另一端与中间固定垫43连接，且中间固定垫43、两支撑垫42和边缘固定垫41部分围合形成与子腔体15相对应的第二通孔44。从上下两个方向对压电振膜20的振动进行约束，压电振膜20距离限位部31底部表面和基底10顶部表面存在1~2um的间隙，这一间隙的形变对于膜片21的自由端212在断裂形变以内。限位件30的设计是由压电振膜20的结构来决定的，凡是对压电振膜20向上摆动起到保护和限制作用的结构均在本专利保护范围之内。 限位件30可以对膜片21的一个或者多个边缘进行保护和限制，亦可对压电振膜20的整个表面进行保护。本实施例当中的压电振膜20的设计是由子腔体15的结构和垫片40的结构共同决定的，在不影响性能的前提下，子腔体15的设计可以根据对膜片21保护的要求来进行修改，不限于本实施例的设计。
进一步参阅图9，作为优选地实施方式，压电式MEMS麦克风还包括约束件70，约束件70的一端与自由端212连接，约束件70的另一端与环形底座12或者限位件30或者垫片40连接，该约束件70可避免膜片21内残余应力对膜片21所造成的不同程度的边缘翘曲、内卷等形变，防止膜片21在低频衰减时存在差异，可以对膜片21的形变进行约束，进而改善压电振膜20的谐振频率，降低整个压电式MEMS麦克风的噪音。
特别的，如果约束件70是刚性约束件，谐振频率一般可以达到35kHz以上，但是灵敏度显著降低（<-44dB）,可以根据实际使用的需要将此处的约束件70更换为刚性约束件。
本实施例中约束件70为弹性约束件，约束件70包括凸出部71、固定柱72以及弹性臂73，凸出部71与膜片21上自由端212相连接，固定柱72与环形底座12或者限位件30或者垫片40相连接，具体地，固定柱72与环形底座12相连接。弹性臂73的一端与凸出部71连接，弹性臂73的另一端与固定柱72相连接，弹性臂73包括第一支臂731、第二支臂732以及弧形连接臂733，第一支臂731与凸出部71连接，第二支臂732与固定柱72连接，弧形连接臂733的一端与第一支臂731连接，弧形连接臂733的另一端与第二支臂732连接，第一支臂731与第二支臂732平行设置，以使得约束件70具有弹性。
作为优选地实施方式，每一膜片21连接两约束件70，膜片21朝向环形底座12一侧的两端各设置一个约束件70，以便于膜片21振动时更平稳。
约束件70的弹性系数可以通过压电振膜20结构的设计进行调节，进而影响压电式MEMS麦克风的谐振频率、灵敏度以及底噪。当约束件70的弹性系数提高，约束作用更强，谐振频率将显著提高，噪声降低，但是灵敏度会下降；反之，弹性系数降低，约束作用变弱，谐振频率减低，但是灵敏度有明显提升，实际设计中应该按照产品要求的灵敏度、信噪比和谐振频率等进行设计。
经过多次试验可知，约束件70可以有效地释放膜片21在加工工艺中形成的残余应力，膜片21的翘曲形变可以得到较好的控制，形变最大处<50nm，这一形变量对压电式MEMS麦克风的低频衰减影响可以忽略。
约束件70的具体设计不做限制，凡是能够起到弹性连接和约束作用的结构均在本专利范围之内。
约束件70的数量、位置和分布的对称性均等不做限制，可以由悬臂梁膜片21的设计和压电式MEMS麦克风的参数要求来共同决定。对于约束结构，凡是一端连接基底10，一端连接膜片21的自由振动端的设计均在本专利范围之内。自由端212可以是除去固定端211的所有边，包括长边和侧边。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (10)

  1. 一种压电式MEMS麦克风，其特征在于，包括具有腔体的基底、安装于所述基底上的压电振膜以及罩设于所述压电振膜外的限位件，所述基底包括环形底座、设于所述环形底座内侧并与所述环形底座间隔设置的支撑柱，所述压电振膜包括多个膜片，每个所述膜片包括与支撑柱连接的固定端和悬置于所述腔体上方的自由端，所述限位件包括与所述压电振膜间隔设置以对所述自由端在所述膜片的振动方向上形成限位的限位部以及与所述限位部的外边缘相连接并安装在所述环形底座上的边缘固定板，所述限位部设有若干个与所述腔体相对设置的第一通孔。
  2. 根据权利要求1所述的压电式MEMS麦克风，其特征在于，所述基底还包括若干个支撑梁，所述支撑梁的一端与所述支撑柱连接、另一端与所述环形底座连接从而将所述腔体分隔成若干个子腔体。
  3. 根据权利要求2所述的压电式MEMS麦克风，其特征在于，所述压电振膜为一体式结构，所述压电振膜自其外边缘向所述压电振膜的中心延伸设有透气缝，所述透气缝将所述压电振膜分隔成所述膜片。
  4. 根据权利要求2所述的压电式MEMS麦克风，其特征在于，所述限位部包括从所述边缘固定板远离所述环形底座的一侧朝向所述支撑柱方向延伸的限位板，所述限位板覆盖部分所述自由端。
  5. 根据权利要求4所述的压电式MEMS麦克风，其特征在于，所述限位部还包括与所述支撑柱相连接的中间固定板以及若干个分别与所述若干个支撑梁一一正对设置的支撑板，每个所述支撑板的一端与所述限位板连接、另一端与所述中间固定板连接，每个所述支撑板覆盖部分所述自由端，所述中间固定板、相邻两所述支撑板和所述限位板部分围合形成所述第一通孔。
  6. 根据权利要求5所述的压电式MEMS麦克风，其特征在于，每个所述膜片的上方、所述中间固定板和所述限位板之间设有挡板，所述挡板的一端与所述中间固定板连接、另一端与所述限位板连接；或者，
    每个所述膜片的上方、两相邻的所述支撑板之间设有挡板，所述挡板的一端与一个所述支撑板连接、另一端与相邻的另一个所述支撑板连接。
  7. 根据权利要求5所述的压电式MEMS麦克风，其特征在于，所述压电式MEMS麦克风还包括设于所述基底与所述压电振膜之间的垫片，所述垫片包括沿所述环形底座延伸方向环设的边缘固定垫，所述边缘固定垫的内侧与所述环形底座形成底座避让区，所述压电振膜外边缘在所述基底上的投影位于所述底座避让区外边缘在所述基底上的投影内。
  8. 根据权利要求7所述的压电式MEMS麦克风，其特征在于，所述垫片还包括若干个分别沿所述若干个支撑梁铺设的支撑垫，所述支撑垫沿其轴向的两侧分别与所述支撑梁形成支撑梁避让区，所述自由端的侧部覆盖所述支撑梁避让区。
  9. 根据权利要求8所述的压电式MEMS麦克风，其特征在于，所述垫片还包括设于所述中间固定板与所述支撑柱之间的中间固定垫，所述支撑垫的一端与所述边缘固定垫连接、另一端与所述中间固定垫连接，且所述中间固定垫、相邻两所述支撑垫以及所述边缘固定垫部分围合形成与所述子腔体相对应的第二通孔。
  10. 根据权利要求7所述的压电式MEMS麦克风，其特征在于，所述压电式MEMS麦克风还包括约束件，所述约束件的一端与所述自由端连接、另一端与所述环形底座或所述限位件或所述垫片连接。
PCT/CN2019/101516 2019-08-16 2019-08-20 压电式 mems 麦克风 WO2021031105A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910760698.X 2019-08-16
CN201910760698.XA CN110545514B (zh) 2019-08-16 2019-08-16 压电式mems麦克风

Publications (1)

Publication Number Publication Date
WO2021031105A1 true WO2021031105A1 (zh) 2021-02-25

Family

ID=68711646

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/101516 WO2021031105A1 (zh) 2019-08-16 2019-08-20 压电式 mems 麦克风

Country Status (3)

Country Link
US (1) US11212623B2 (zh)
CN (1) CN110545514B (zh)
WO (1) WO2021031105A1 (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11553280B2 (en) 2019-06-05 2023-01-10 Skyworks Global Pte. Ltd. Piezoelectric MEMS diaphragm microphone
US11350219B2 (en) 2019-08-13 2022-05-31 Skyworks Solutions, Inc. Piezoelectric MEMS microphone
WO2021036653A1 (zh) 2019-08-28 2021-03-04 武汉大学 一种高灵敏度压电式麦克风
CN111050256A (zh) * 2019-12-17 2020-04-21 武汉大学 一种小型化的高灵敏度压电式麦克风
CN111372178B (zh) * 2019-12-15 2022-01-11 瑞声科技(新加坡)有限公司 一种mems麦克风、阵列结构及加工方法
WO2021124611A1 (ja) * 2019-12-17 2021-06-24 株式会社村田製作所 トランスデューサ
WO2021134683A1 (zh) * 2019-12-31 2021-07-08 瑞声声学科技(深圳)有限公司 一种mems麦克风及阵列结构
CN111163410A (zh) * 2019-12-31 2020-05-15 歌尔股份有限公司 一种用于mems器件的防尘结构及mems麦克风封装结构
CN111148000B (zh) * 2019-12-31 2021-10-22 瑞声科技（南京）有限公司 一种mems麦克风及阵列结构
CN111225330A (zh) * 2019-12-31 2020-06-02 瑞声科技（南京）有限公司 压电mems麦克风及压电mems麦克风的制备方法
CN111328005B (zh) * 2020-03-10 2021-09-10 瑞声声学科技(深圳)有限公司 压电式mems麦克风
CN111432298B (zh) * 2020-03-31 2022-04-22 歌尔微电子有限公司 挡板、音频组件和电子设备
CN111405441B (zh) * 2020-04-16 2021-06-15 瑞声声学科技(深圳)有限公司 一种压电式mems麦克风
CN111453691B (zh) * 2020-04-21 2023-05-12 安徽奥飞声学科技有限公司 一种mems结构的制造方法
CN111417060B (zh) * 2020-04-21 2021-04-06 安徽奥飞声学科技有限公司 一种mems结构的制造方法
CN212086487U (zh) * 2020-05-25 2020-12-04 瑞声声学科技(深圳)有限公司 压电式mems麦克风
CN111770425B (zh) * 2020-06-24 2021-09-07 瑞声科技（南京）有限公司 换能器
CN111885468B (zh) * 2020-07-09 2021-12-24 诺思(天津)微系统有限责任公司 Mems压电扬声器
US11159893B1 (en) * 2020-07-21 2021-10-26 Aac Acoustic Technologies (Shenzhen) Co., Ltd. MEMS sound transducer
CN213342677U (zh) * 2020-09-27 2021-06-01 瑞声科技（南京）有限公司 一种压电式麦克风
CN214154837U (zh) * 2020-11-30 2021-09-07 瑞声科技（南京）有限公司 压电mems麦克风
CN113115188B (zh) * 2021-03-29 2023-07-04 瑞声声学科技(深圳)有限公司 Mems压电麦克风
CN115550822B (zh) * 2021-06-30 2024-06-25 华为技术有限公司 压电扬声器以及电子设备
CN113596690B (zh) * 2021-08-13 2023-03-14 中北大学 新型压电式mems麦克风的结构及装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201355867Y (zh) * 2008-12-26 2009-12-02 瑞声声学科技(深圳)有限公司 硅基电容式麦克风
CN102986249A (zh) * 2010-07-23 2013-03-20 日本电气株式会社 振荡器和电子设备
CN108367908A (zh) * 2015-12-18 2018-08-03 罗伯特·博世有限公司 中心固定的mems麦克风膜
WO2018207578A1 (ja) * 2017-05-09 2018-11-15 富士フイルム株式会社 圧電マイクロフォンチップおよび圧電マイクロフォン
CN109495829A (zh) * 2018-12-31 2019-03-19 瑞声声学科技(深圳)有限公司 压电式mems麦克风

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8531088B2 (en) * 2008-06-30 2013-09-10 The Regents Of The University Of Michigan Piezoelectric MEMS microphone
KR20120061422A (ko) * 2010-12-03 2012-06-13 한국전자통신연구원 멤스 음향 센서
JP5936154B2 (ja) * 2011-03-31 2016-06-15 ベスパー テクノロジーズ インコーポレイテッドＶｅｓｐｅｒ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｉｎｃ． ギャップ制御構造を有する音響トランスデューサおよび音響トランスデューサの製造方法
US9029963B2 (en) * 2012-09-25 2015-05-12 Sand 9, Inc. MEMS microphone
KR101558393B1 (ko) * 2014-10-17 2015-10-07 현대자동차 주식회사 마이크로폰 및 그 제조 방법
CN105848074B (zh) * 2015-01-15 2020-07-28 联华电子股份有限公司 微机电麦克风
DE102016111909B4 (de) * 2016-06-29 2020-08-13 Infineon Technologies Ag Mikromechanische Struktur und Verfahren zu ihrer Herstellung
CN110099345B (zh) * 2019-05-18 2024-05-03 安徽奥飞声学科技有限公司 一种mems结构

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201355867Y (zh) * 2008-12-26 2009-12-02 瑞声声学科技(深圳)有限公司 硅基电容式麦克风
CN102986249A (zh) * 2010-07-23 2013-03-20 日本电气株式会社 振荡器和电子设备
CN108367908A (zh) * 2015-12-18 2018-08-03 罗伯特·博世有限公司 中心固定的mems麦克风膜
WO2018207578A1 (ja) * 2017-05-09 2018-11-15 富士フイルム株式会社 圧電マイクロフォンチップおよび圧電マイクロフォン
CN109495829A (zh) * 2018-12-31 2019-03-19 瑞声声学科技(深圳)有限公司 压电式mems麦克风

Also Published As

Publication number Publication date
US11212623B2 (en) 2021-12-28
US20210051415A1 (en) 2021-02-18
CN110545514A (zh) 2019-12-06
CN110545514B (zh) 2021-01-08

Similar Documents

Publication Publication Date Title
WO2021031105A1 (zh) 压电式 mems 麦克风
JP6179297B2 (ja) 音響トランスデューサ及びマイクロフォン
US11265657B2 (en) Piezoelectric MEMS microphone
US10993040B2 (en) Piezoelectric microphone
WO2021031107A1 (zh) 压电式 mems 麦克风
US9319798B2 (en) Capacitive transducer
US11032651B2 (en) Piezoelectric microphone
CN111328005B (zh) 压电式mems麦克风
US11057715B2 (en) Piezoelectric microphone
JP6127611B2 (ja) 静電容量型センサ、音響センサ及びマイクロフォン
KR102193337B1 (ko) Mems 구조 및, mems 구조를 갖는 정전 용량형 센서, 압전형 센서, 음향 센서
JP7067891B2 (ja) トランスデューサ
CN112788508B (zh) 微机电系统麦克风的结构及其制作方法
US9584903B2 (en) MEMS device and process
WO2014141506A1 (ja) 音響トランスデューサ
JP6432372B2 (ja) 音響センサ
WO2021012610A1 (zh) 一种防尘帽组件及超薄喇叭
CN214205841U (zh) 微机电系统mems麦克风芯片及mems麦克风
WO2022007000A1 (zh) 一种 mems 麦克风
CN214315604U (zh) Mems麦克风
KR101454324B1 (ko) 마이크로 스피커용 진동판
CN115442725A (zh) 一种压电式mems麦克风结构及电子设备
WO2022006999A1 (zh) 一种mems麦克风
TW202126062A (zh) 微機電系統的麥克風結構

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19942010

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19942010

Country of ref document: EP

Kind code of ref document: A1