WO2021027405A1 - 发光器件及制作方法和含该发光器件的显示屏和照明器材 - Google Patents

发光器件及制作方法和含该发光器件的显示屏和照明器材 Download PDF

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Publication number
WO2021027405A1
WO2021027405A1 PCT/CN2020/098498 CN2020098498W WO2021027405A1 WO 2021027405 A1 WO2021027405 A1 WO 2021027405A1 CN 2020098498 W CN2020098498 W CN 2020098498W WO 2021027405 A1 WO2021027405 A1 WO 2021027405A1
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Prior art keywords
light
emitting device
led chips
led
lens
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PCT/CN2020/098498
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English (en)
French (fr)
Inventor
李兴龙
徐宸科
时军朋
黄永特
Original Assignee
泉州三安半导体科技有限公司
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Application filed by 泉州三安半导体科技有限公司 filed Critical 泉州三安半导体科技有限公司
Priority to EP20852446.2A priority Critical patent/EP4016649A4/en
Priority to JP2021532393A priority patent/JP2022543509A/ja
Publication of WO2021027405A1 publication Critical patent/WO2021027405A1/zh
Priority to US17/669,743 priority patent/US20220165922A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • the invention designs the field of semiconductor components, especially a light-emitting device and a manufacturing method, and a display screen and lighting equipment containing the light-emitting device.
  • LED packaging can effectively protect the chip mechanically, enhance heat dissipation, improve light output efficiency, and optimize beam distribution. Therefore, the LED packaging structure is an important factor affecting the performance of display devices or lighting equipment.
  • LEDs need to narrow the light-emitting angle and require that the horizontal irradiation area of the LED is larger than the vertical irradiation area .
  • the prior art adopts the conventional LED chip to be placed on the carrier substrate through a die bond method.
  • the die-bonding glue will be offset during baking (positive chip) or return process (flip chip), so the distance between existing die-bonding chips is usually more than 50 microns, and the minimum is 30 microns.
  • the light-emitting center of the R ⁇ G ⁇ B chip is difficult to be located at the center of the lens, which will cause a large difference in the light-emitting angle of the chip.
  • the purpose of the present invention is to provide a light-emitting device, a manufacturing method, and a display screen and lighting equipment containing the light-emitting device, which are used to solve the problem that the existing light-emitting device cannot be integrated with a smaller specification.
  • the problem of wide light-emitting angle is to provide a light-emitting device, a manufacturing method, and a display screen and lighting equipment containing the light-emitting device, which are used to solve the problem that the existing light-emitting device cannot be integrated with a smaller specification.
  • one aspect of the present invention is to provide a light-emitting device, including:
  • An encapsulation layer covering the side surfaces of the at least three LED chips and filling the gaps between the at least three LED chips;
  • the lens is arranged above the first surface of the at least three LED chips and covers the light-emitting area of the at least three LED chips.
  • more than 70% of the light emitted by the at least three LED chips is emitted from the first surface.
  • the light emitting power of the encapsulation layer is less than 30% of the total light emitting power.
  • the encapsulation layer is filled with colored silica gel or silicone resin with a transmittance of ⁇ 20%.
  • the connecting surface of the lens and the encapsulation layer is approximately an ellipse, and the ratio a/b of the minor axis length a to the major axis length b of the ellipse is greater than or equal to 0.4 and less than or equal to 0.9, wherein the minor axis length a is greater than or equal to
  • the maximum diameter D of the region is 1.5 times, and the height of the semi-ellipsoid is h>0.5a.
  • the lens is a semi-oblate ellipsoid, and the approximate ellipse formed at the junction of the lens and the encapsulation layer, the half-value angle corresponding to the short axis direction is ⁇ ; the long axis direction corresponds to the half-value angle ⁇ , where ⁇ , 20° ⁇ 70°.
  • the half-value angle ⁇ corresponding to the short axis direction of the lens is greater than 30° and less than 50°.
  • the geometric centers of the light-emitting regions of the at least three LED chips coincide with the optical axis of the lens.
  • the lens is made of silica gel or resin through an injection molding process.
  • the size of the at least three LED chips is 380 ⁇ m ⁇ 380 ⁇ m or less.
  • the spacing between the at least three LED chips is 50 ⁇ m or less.
  • the light-emitting assembly does not have a packaging substrate for carrying the LED chip, and the LED chip is fixed in position by the packaging layer.
  • a carrier substrate is provided at the lower part of the encapsulation layer, exposed electrodes are provided on the lower surface of the carrier substrate, the circuit layer of the light-emitting device is disposed in the encapsulation layer on the upper side of the carrier substrate, so The connecting line between the electrode and the circuit layer passes through the through hole on the carrier substrate.
  • a scattering light mixing layer is further provided above the at least three LED chips.
  • the scattering light mixing layer is formed by curing particles uniformly distributed in the transparent silica gel or resin.
  • the light emitting device includes only three LED chips, which are R light chips, G light chips, and B light chips, respectively.
  • the three LED chips are arranged and distributed in a "pin" shape or a "one" shape.
  • the cathodes or anodes of the at least three LED chips are led out through a common cathode or common anode electrical connection structure.
  • a bare electrode is provided on a side of the light emitting device facing away from the first surface.
  • the electrode is an SMT electrode that can be welded.
  • the circuit layer of the light-emitting assembly is arranged in the encapsulation layer on the second surface side of the at least three LED chips.
  • Another aspect of the present invention is to provide a display screen, including an electrical connection unit, a box body, and a screen body.
  • the light-emitting device according to any one of the above is also installed, and the light-emitting device is used as a pixel to be mounted on the screen. Physically.
  • the present invention also provides a lighting equipment, including a frame and a light-emitting assembly, the light-emitting assembly comprising any one of the above-mentioned light-emitting devices.
  • the present invention also provides a manufacturing method of the light-emitting device, including the following steps:
  • the LED chip includes a first surface, a second surface, and a side surface connected between the first surface and the second surface, and a pair of electrodes are distributed on the second surface, Adhering at least three LED chips to the adhesive tape spaced apart, and setting the second surfaces of the at least three LED chips on the same plane and facing upwards;
  • a lens is formed on the light-emitting surface of the LED chip.
  • step (5) a process of fabricating a scattering light mixing layer on the upper part of the plurality of chips is further included.
  • the encapsulation layer is cured and molded by colored silica gel or silicone resin with a transmittance ⁇ 20%.
  • the lens is made of silica gel or resin through an injection molding process.
  • the light-emitting device of the present invention does not have a traditional carrier substrate or a support, but uses an encapsulation layer to cover the side surfaces of at least three LED chips and fill the gaps between the at least three LED chips to achieve fixation of at least three LED chips.
  • This structure is not only The production efficiency is improved, the production cost of the LED is reduced, and there is no need to use a die bond for die bonding, so that the spacing between the chips can be reduced to less than 30 ⁇ m, and the uniformity of the light emitting angle of the light emitting device can be better controlled.
  • the light-emitting device of the present invention is provided with a lens above the light-emitting area of at least three LED chips, which changes the approximate Lambertian light field distribution of the LED chip to form a special light field distribution.
  • the special light field distribution makes the light energy more concentrated.
  • the area to be applied can effectively improve the utilization rate of light energy, reduce the energy consumption and cost of the light source, and avoid the light pollution of the light source to the non-irradiated area.
  • the maximum diameter D of the light-emitting area of the light-emitting device in the present invention is less than 1 mm, which can effectively reduce the overlapping position error between the center of the light-emitting area and the center of the lens, and can effectively reduce the difference in the light-emitting angle of the light-emitting device.
  • the light-mixing structure layer on the light-emitting device of the present invention can effectively improve the light-emitting uniformity of the LED chip.
  • the gaps between the at least three LED chips in the present invention are filled with colored silica gel or silicone resin with a transmittance ⁇ 20%, so that After the LED display is spliced, the light interference of adjacent display units is greatly reduced.
  • the encapsulation layer makes the LED display screen spliced, and the light interference of adjacent display units is greatly reduced.
  • Figure 1 is a three-dimensional view of Embodiment 1 of the light-emitting device of the present invention.
  • Fig. 2 is a structural view of a top view from the lens side to the LED chip side of Embodiment 1 of the light emitting device of the present invention
  • Figure 3 is a cross-sectional view of A-A in Figure 2;
  • Embodiment 4 is an inverted three-dimensional view of Embodiment 1 of the light-emitting device of the present invention.
  • FIG. 5 is a diagram showing the positions of the semi-oblate ellipsoid and the center of the light-emitting area of three LED chips in the first embodiment of the light-emitting device of the present invention
  • FIG. 6 is a schematic diagram of the height of the semi-oblate ellipsoid in the first embodiment of the light emitting device of the present invention.
  • FIG. 7 is a structural view of the second embodiment of the light-emitting device of the present invention, viewed from the lens side to the LED chip side;
  • Figure 8 is a cross-sectional view of B-B in Figure 7;
  • Fig. 9 is an inverted three-dimensional view of the second embodiment of the light-emitting device of the present invention.
  • FIG. 10 is a three-dimensional view of Embodiment 3 of the light-emitting device of the present invention.
  • FIG. 11 is a structural view of a top view from the lens side to the LED chip side of Embodiment 3 of the light-emitting device of the present invention.
  • Figure 12 is a cross-sectional view of C-C in Figure 11;
  • FIG. 13 is a diagram of the positions of the semi-oblate ellipsoid and the center of the light-emitting area of three LED chips in the third embodiment of the light-emitting device of the present invention.
  • FIG. 14 is a schematic diagram of the height of the semi-oblate ellipsoid in Embodiment 3 of the light-emitting device of the present invention.
  • Embodiment 15 is a structural diagram of Embodiment 4 of a light-emitting device of the present invention.
  • Fig. 16 is a light intensity distribution diagram of an existing light emitting device
  • Fig. 17 is a light intensity distribution diagram of the light-emitting device of the present invention.
  • 10 lens; 20: LED chip; 30: packaging layer; 40: circuit layer; 50: electrode; 60: carrier substrate; 61: through hole; 70: scattering light mixing layer.
  • the present invention provides a light emitting device, including:
  • the encapsulation layer 30 covers the side surfaces of at least three LED chips 20 and fills the gaps between the at least three LED chips 20;
  • the lens 10 is arranged above the first surface of the at least three LED chips 20 and covers the light emitting area of the at least three LED chips 20.
  • the light-emitting device of the present invention does not have a traditional substrate or a support, but the encapsulation layer 30 covers the side surfaces of the at least three LED chips 20 and fills the gaps between the at least three LED chips 20 to realize the fixing of the at least three LED chips 20.
  • This structure not only improves the production efficiency and reduces the production cost of the LED, but also does not require die-bonding glue, so that the spacing between the chips can be reduced to less than 30 ⁇ m, which can better control the uniformity of the light-emitting angle of the light-emitting device .
  • the light-emitting device of the present invention is provided with a lens 10 above the light-emitting area of at least three LED chips 20, which changes the approximate Lambertian light field distribution of the LED chip 20 to form a special light field distribution, which makes the light energy more concentrated Illuminated to the area to be applied can effectively improve the utilization rate of light energy, reduce the energy consumption and cost of the light source, and avoid problems such as light pollution of the light source to the non-irradiated area.
  • the maximum diameter D of the light-emitting area of the light-emitting device in the present invention is less than 1 mm, which can effectively reduce the overlapping position error between the center of the light-emitting area and the center of the lens 10, and can effectively reduce the difference in the light-emitting angle of the light-emitting device.
  • the light-emitting device in this embodiment includes three LED chips 20, but it should be noted that the light-emitting device in the present invention may also include only three LED chips or more than three LED chips, such as four or five LED chips. Micro-led (100 ⁇ m ⁇ 100 ⁇ m or less), as long as it satisfies the maximum diameter D of the light-emitting area to be less than 1mm.
  • the three LED chips 20 can emit different lights. Considering the wide range of applications, the three LED chips 20 in this embodiment are R light chips, G light chips, and B light chips, and can emit red light correspondingly. , Green and blue light.
  • the luminous rate of the first surface of the LED chip 20 may not be limited in principle, but in order to improve energy efficiency, preferably, the luminous power of the encapsulation layer in this embodiment is less than 30% of the total luminous power, that is, at least More than 70% of the light emitted by the three LED chips 20 is emitted from the first surface.
  • the encapsulation layer 30 in the present invention has a silica gel or resin whose transmittance is less than 30%, for example, it can be It is 20%, 10% or 0%, etc. below 30%. The smaller the transmittance, the better the light blocking effect.
  • the transmittance of the encapsulation layer 30 is 20%, and the color can be black or other dark colors.
  • the black or dark color encapsulation layer 30 can improve the contrast of the display device.
  • the encapsulation layer 30 preferably uses colored silica gel or colored silicone resin with a transmittance ⁇ 20%.
  • the lens 10 in the present invention is a convex primary package lens with only one light-emitting surface, and the light-emitting surface is convex to the side away from the LED chip 20.
  • the convex shape can be adjusted according to the light field distribution required, but in order to achieve The different half-value angles in the X direction and the Y direction make the LED lateral irradiation area larger than the longitudinal irradiation area.
  • the lens 10 in this embodiment is a semi-oblate ellipsoid, and the lens and the packaging layer are connected to form an approximate ellipse Surface (approximately elliptical surface refers to that the contour of the surface is approximately or close to the shape of an ellipse), the short axis direction of the approximate elliptical surface corresponds to the half-value angle ⁇ ; the long axis direction corresponds to the half-value angle ⁇ , where ⁇ , 20° ⁇ ⁇ 70°.
  • ⁇ can be any angle value between 20°-70°, such as 25°, 30°, 50°, 60°, 65°, etc.
  • the half-value angle ⁇ corresponding to the minor axis direction of the lens 10 in this embodiment
  • any angle value between 30°-50° such as 35°, 40°, 45°, etc., is used.
  • the ratio a/b of the minor axis length a to the major axis length b of the semi-ellipsoid in this embodiment satisfies the following conditions 0.4 ⁇ a/b ⁇ 0.9, and the minor axis length a is greater than or equal to the light-emitting area
  • the maximum diameter D is 1.5 times.
  • a/b can be any value from 0.4 to 0.9 (including 0.4 and 0.9) such as 0.4, 0.65, 0.7, 0.75, 0.8, 0.85, 0.9.
  • the height of the semi-ellipsoid is h>0.5a.
  • the geometric center of the light-emitting area of at least three LED chips 20 and the optical axis of the lens 10 coincide.
  • the lens 10 in this embodiment is made of silica gel or resin through an injection molding process.
  • the lens 10 mold is used to fix the contiguous LEDs, and the cavity formed between the LED and the lens 10 mold is filled with thermosetting clear silica gel or epoxy resin, and the lens 10 is formed in the shape of the lens 10 mold after heating.
  • the LED chip 20 in this embodiment preferably adopts a mini-led with a size of 380 ⁇ m ⁇ 380 ⁇ m or a micro-led with a size of 100 ⁇ m ⁇ 100 ⁇ m or less.
  • a mini-led of 380 ⁇ m ⁇ 380 ⁇ m or less is used.
  • the distance between the three LED chips 20 is 50 ⁇ m or less, which may be 40 ⁇ m, 30 ⁇ m, 20 ⁇ m, 10 ⁇ m, 5 ⁇ m, and so on.
  • the light-emitting assembly in this embodiment does not have a packaging substrate for carrying the LED chip 20, and the LED chip 20 is formed by the packaging layer. 30 fixed position.
  • This kind of packageless substrate structure not only improves the production efficiency and reduces the production cost of LEDs, but also does not need to use die-bonding glue for die bonding, so that the spacing between the chips can be reduced to less than 30 ⁇ m, which can better control the light-emitting devices Consistency of luminous angle.
  • the three LED chips 20 in this embodiment can be arranged in a variety of ways.
  • the three LED chips 20 in this embodiment are arranged in a "one" shape, and pass through their cathodes or anodes.
  • the common cathode or common anode electrical connection structure is led out, and the side of the light emitting device facing away from the first surface is provided with a bare electrode 50.
  • the electrode 50 is a solderable SMT electrode.
  • the circuit layer 40 of the light-emitting component in this embodiment can be provided with an insulating layer alone, or can be insulated by an encapsulation layer.
  • the circuit layer 40 is provided in the encapsulation layer 30 on the second surface side of the three LED chips 20. It is insulated by the encapsulation layer 30.
  • this embodiment provides a light emitting device, which is substantially the same as the embodiment, except that a carrier substrate 60 is provided at the lower portion of the packaging layer 30, and the lower surface of the packaging layer 30 of this embodiment Mounted on the carrier substrate 60, the lower surface of the carrier substrate 60 is provided with a bare SMT electrode 50, the circuit layer 40 of the light-emitting device is provided in the encapsulation layer 30 on the upper side of the carrier substrate 60, and the connection line between the SMT electrode 50 and the circuit layer 40 Pass through the through hole 61 on the carrier substrate 60.
  • the carrier substrate 60 can provide sufficient rigid support for the packaging layer 30 to prevent deformation of the packaging layer 30 caused by high temperature.
  • this embodiment provides a light emitting device, which is substantially the same as the embodiment, except that the three LED chips 20 in this embodiment are arranged in a "product" shape.
  • the maximum diameter D of the light-emitting area of the three LED chips 20 arranged in a "pin" shape is less than 1mm, which is the same as the first embodiment.
  • the ratio a/b of the minor axis length a to the major axis length b of the semi-ellipsoid is still The following conditions are satisfied: 0.4 ⁇ a/b ⁇ 0.9, and the minor axis length a is greater than or equal to 1.5 times the maximum diameter D of the light emitting region.
  • a/b can be any value from 0.4 to 0.9 (including 0.4 and 0.9) such as 0.4, 0.45, 0.7, 0.75, 0.8, 0.85, 0.9.
  • the height of the semi-ellipsoid is h>0.5a.
  • the arrangement of " ⁇ " shape makes the distance between each LED chip 20 close, which is more advantageous for light mixing.
  • this embodiment provides a light emitting device, which is substantially the same as the embodiment, except that a scattering light mixing layer 70 is further provided above the three LED chips 20.
  • the light-scattering mixing layer 70 is formed by curing particles uniformly distributed in light-transmitting silica gel or resin.
  • the scattering particles in the light emitting device of the present invention can be a certain kind of particulate matter with scattering function, or a combination of multiple scattering particles, such as SiO2, TiO2 or a mixture of SiO2 and TiO2.
  • the arrangement of the scattering light mixing layer 70 can improve the light output uniformity of the LED chip 20.
  • the light intensity distribution of the light emitting device in this embodiment is more concentrated than the light intensity distribution of the existing light emitting device in FIG.
  • This embodiment provides a light-emitting device, which is substantially the same as the fourth embodiment, except that the three LED chips in this embodiment are arranged in a " ⁇ " shape, and the three LED chips 20 are arranged in a " ⁇ " shape.
  • the maximum diameter D of the light-emitting area is less than 1 mm.
  • This embodiment provides a display screen, which includes an electrical connection unit, a box body, and a screen body.
  • the screen body is installed on the box body.
  • the electrical connection unit electrically connects the screen body to an external circuit.
  • the light-emitting device of any one of the first to the fourth embodiment is installed on the screen.
  • the light-emitting device is used as a pixel to be mounted on the screen.
  • the electrode 50 of the light-emitting device is fixed with solder paste and connected to the display circuit of the electrical connection unit.
  • the board is electrically connected and welded.
  • the encapsulation layer 30 makes the LED display screen spliced, and the light interference of adjacent display units is greatly reduced.
  • This embodiment provides a lighting fixture, which includes a frame and a light-emitting assembly, where the light-emitting assembly is installed on the frame, and the light-emitting assembly includes the light-emitting device of any one of the first to the fourth embodiments.
  • This embodiment provides a method for manufacturing a light emitting device, including the following steps:
  • the LED chip includes a first surface, a second surface, and a side surface connected between the first surface and the second surface, and a pair of electrodes are distributed on the second surface, Adhering the first surfaces of the at least three LED chips to the adhesive tape at intervals, and setting the second surfaces of the at least three LED chips on the same plane and facing upwards;
  • a lens is formed on the light-emitting surface of the LED chip.
  • the lens mold is fixed on the scattering light mixing layer, and the cavity formed between the scattering light mixing layer and the lens mold is filled with thermosetting clear silica gel or epoxy resin, and the lens is formed into a lens mold shape after heating and molding.
  • the lens mold can be fixed on the encapsulation layer, and the cavity formed between the encapsulation layer and the lens mold is filled with thermosetting clear silica gel or epoxy resin, and then heated and molded , Forming a lens in the shape of a lens mold.
  • the light-emitting device of the present invention does not have a traditional carrier substrate or a support, but covers the side surfaces of at least three LED chips with an encapsulation layer and fills the gaps between the at least three LED chips to realize the fixation of at least three LED chips.
  • This structure not only improves the production efficiency and reduces the production cost of LEDs, but also does not require die-bonding by die-bonding glue, so that the spacing between the chips can be reduced to less than 30 ⁇ m, which can better control the light-emitting angle of the light-emitting device consistency.
  • the light-emitting device of the present invention is provided with a lens above the light-emitting area of at least three LED chips, which changes the approximate Lambertian light field distribution of the LED chip to form a special light field distribution.
  • the special light field distribution makes the light energy more concentrated.
  • the area to be applied can effectively improve the utilization rate of light energy, reduce the energy consumption and cost of the light source, and avoid the light pollution of the light source to the non-irradiated area. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial value.

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  • Engineering & Computer Science (AREA)
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Abstract

一种发光器件及制作方法和含该发光器件的显示屏和照明器材，发光器件包括：彼此间隔的至少三个LED芯片（20），至少三个LED芯片（20）被配置为发射各自波长的光，其发光区域的最大直径D为1mm以下；封装层（30），覆盖至少三个LED芯片（20）的侧表面并填充该至少三个LED芯片（20）之间的间隙；透镜（10），设置于该至少三个LED芯片（20）的第一表面的上方，且覆盖该至少三个LED芯片（20）的发光区域。该发光器件没有传统的承载基板或支架而是通过封装层（30）固定，无需通过固晶胶进行固晶，使得芯片（20）之间的间距可以变小至30μm以下，能够更好的控制发光器件发光角度的一致性。发光器件的发光区域上方设置有透镜（10），使得光能更加集中的照射到所要应用的区域。

Description

发光器件及制作方法和含该发光器件的显示屏和照明器材
相关申请：本申请主张如下优先权：中国发明专利申请号201910738265.4，标题为“发光器件及制作方法和含该发光器件的显示屏和照明器材”，于 2019 年 8 月 12日提交，上述申请的全部内容通过引用结合在本申请中。
技术领域
本发明设计半导体元器件领域，尤其是一种发光器件及制作方法和含该发光器件的显示屏和照明器材。
 背景技术
LED封装能够对芯片进行有效的机械保护，并能够加强散热，提高出光效率，优化光束分布，因此LED封装结构是影响显示设备或照明器材性能的一个重要因素。
传统显示屏多采用引脚式封装技术(Lamp LED)，引脚式封装适用于电流较小 (20-30mA)，功率较低(小于0.1W)的LED封装。如仪表显示或指示，虽然大规模集成时也可作为显示屏，但其缺点在于封装热阻较大(一般高于100K/W)、散热差、寿命低，尤其是对于户外交通显示牌来说，不仅可靠性能差、寿命低、集成度低，而且无法实现彩色显示，使得显示效果大打折扣。
另外，在交通显示牌、广告显示屏等应用场合，为提高光能利用率，并且避免道路等非照射区域受到LED的光污染，LED需要收窄发光角度，且要求LED横向照射区域大于纵向照射区域。然而现有技术所采用的是将常规LED芯片通过固晶方式放置在承载基板上，由于固晶机本身存在误差（较好的固晶机一般在±15μm，业内最高精度的固晶机也存在±5μm的误差）以及固晶胶在烘烤（正装芯片）或者回流程（倒装芯片）会发生偏移，所以现有固晶芯片之间的距离通常为50微米以上，最低也在30微米以上，在采用透镜收窄发光角度时，则R\G\B芯片的发光中心难于位于该透镜的中心，会导致芯片的发光角度差异较大。
因此在提高可靠性能的前提下，实现了特殊光场分布和RGB彩色显示封装的结构，对LED封装的提出了新的、更高的要求，必须采用全新的技术思路来进行封装设计。
 技术解决方案
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种发光器件及制作方法和含该发光器件的显示屏和照明器材，用于解决现有发光器件无法实现较小规格的集成，发光角度较宽的问题。
为实现上述目的及其他相关目的，本发明的一个方面是提供一种发光器件，包括：
彼此间隔的至少三个LED芯片，所述至少三个LED芯片被配置为发射各自波长的光，其发光区域的最大直径D为1mm以下，每一个所述LED芯片包含相对的第一表面、第二表面和连接于该第一表面和该第二表面之间的侧表面；
封装层，覆盖所述至少三个LED芯片的侧表面并填充该至少三个LED芯片之间的间隙；
透镜，设置于所述该至少三个LED芯片的第一表面的上方，且覆盖该至少三个LED芯片的发光区域。
优选地，所述至少三个LED芯片发射的光线70%以上从第一表面射出。
优选地，所述封装层的发出光功率小于发光总功率的30%。
进一步地，所述封装层由透射率≤20%的有色硅胶或硅树脂填充。
优选地，所述透镜与封装层连接面为近似椭圆，该椭圆的短轴长度a与长轴长度b的比值a/b 大于或等于0.4且小于或等于0.9，其中短轴长度a大于等于发光区域的最大直径D的1.5倍，所述半椭球体的高度h＞0.5a。
进一步地，所述透镜为半扁椭球体，所述透镜与封装层连接处形成的近似椭圆面，短轴方向对应的半值角为α；长轴方向对应半值角β，其中α<β，20°<α<70°。
优选地，所述透镜短轴方向对应的半值角α大于30°且小于50°。
进一步地，从所述透镜侧向所述LED芯片侧俯视，所述至少三个LED芯片的发光区域的几何中心与所述所述透镜的光轴重合。
优选地，所述透镜由硅胶或树脂经注塑工艺制成。
优选地，所述至少三个LED芯片的尺寸为380μm×380μm以下。
优选地，所述至少三个LED芯片之间的间距为50μm以下。
优选地，所述发光组件不具有用于承载所述LED芯片的一封装基板，所述LED芯片由所述封装层固定位置。
优选地，所述封装层的下部设置有承载基板，所述承载基板的下表面设置有裸露的电极，所述发光器件的电路层设置在所述承载基板上侧的所述封装层内，所述电极与所述电路层的连接线从所述承载基板上的通孔内穿过。
优选地，所述至少三个LED芯片上方还设置有散射混光层。
进一步地，所述散射混光层由散射粒子均匀分布在透光硅胶或树脂内固化成型。
优选地，所述发光器件仅包括三个LED芯片，且分别为R光芯片、G光芯片和B光芯片。
进一步地，所述三个LED芯片呈“品”字形或“一”字形排列分布。
优选地，所述至少三个LED芯片的阴极或阳极通过共阴极或共阳极电接结构引出。
优选地，所述发光器件背离所述第一表面的一侧设置有裸露的电极。
进一步地，所述电极为能够焊接的SMT电极。
优选地，所述发光组件的电路层设置在所述至少三个LED芯片第二表面侧的所述封装层内。
本发明的另一个方面是提供一种显示屏，包括电气连接单元、箱体和屏体，还安装有上述任一项所述的发光器件，所述发光器件用作像素点安装在所述屏体上。
本发明还提供一种照明器材，包括架体和发光组件，所述发光组件包括上述任一项所述的发光器件。
本发明还提供一种发光器件的制作方法，包括以下步骤：
（1）提供至少三个LED芯片，该LED芯片包含相对的第一表面、第二表面和连接于该第一表面和该第二表面之间的侧表面，第二表面上分布有一对电极，将至少三个LED芯片彼此间隔的粘附于胶带上，且使所述至少三个LED芯片的第二表面在同一平面上并朝上设置；
（2）形成封装层，使其填充所述至少三个LED芯片间的间隙，并覆盖每一所述LED芯片的侧表面，裸露出每一个所述LED芯片的电极表面；
（3）在所述至少三个LED芯片的电极表面上形成电路层，并使所述电路层与所述至少三个LED芯片的电极连接；
（4）在所述电路层上制作绝缘层，并裸露出所述电路层的电极引出端；
（5）去除胶带；
（6）在LED芯片的出光面形成透镜。
优选地，在步骤（5）和步骤（6）之间还包括在所述多个芯片的上部制作散射混光层的过程。
优选地，所述封装层由透射率≤20%的有色硅胶或硅树脂固化成型。
优选地，所述透镜由硅胶或树脂经注塑工艺制成。
 有益效果
本发明发光器件没有传统的承载基板或支架而是通过封装层覆盖至少三个LED芯片的侧表面并填充至少三个LED芯片之间的间隙来实现至少三个LED芯片的固定，这种结构不仅提升了生产效率，降低了LED的生产成本，而且无需通过固晶胶进行固晶，使得芯片之间的间距可以变小至30μm以下，能够更好的控制发光器件发光角度的一致性。本发明发光器件的至少三个LED芯片发光区域上方设置有透镜，改变了LED芯片近似朗伯型的光场分布，而形成特殊光场分布，该特殊光场分布使得光能更加集中的照射到所要应用的区域，能够有效提高光能的利用率，降低了光源的能耗和成本，同时避免了光源对非照射区域的光污染等问题。另外本发明中发光器件发光区域的最大直径D为1mm以下，这样可以有效减小发光区域中心与透镜中心的重合位置误差，能够有效减小发光器件的发光角度差异。
本发明发光器件上的混光结构层能够有效提高LED芯片的出光均匀性，另外本发明中的所述至少三个LED芯片间的缝隙由透射率≤20%的有色硅胶或硅树脂填充，使得LED显示屏拼接后，邻近显示单元的光干扰大大降低。
本发明显示屏采用本发明发光器件作为像素单元安装在显示屏上时，封装层使得LED显示屏拼接后，邻近显示单元的光干扰大大降低。
 附图说明
图1为本发明发光器件实施例一的三维图；
图2为本发明发光器件实施例一从透镜侧向LED芯片侧俯视的结构图；
图3为图2中A-A的剖视图；
图4为本发明发光器件实施例一的倒置三维图；
图5为本发明发光器件实施例一中半扁椭球体与三个LED芯片发光区域中心的位置图；
图6为本发明发光器件实施例一中半扁椭球体的高度示意图；
图7为本发明发光器件实施例二从透镜侧向LED芯片侧俯视的结构图；
图8为图7中B-B的剖视图；
图9为本发明发光器件实施例二的倒置三维图；
图10为本发明发光器件实施例三的三维图；
图11为本发明发光器件实施例三从透镜侧向LED芯片侧俯视的结构图；
图12为图11中C-C的剖视图；
图13为本发明发光器件实施例三中半扁椭球体与三个LED芯片发光区域中心的位置图；
图14为本发明发光器件实施例三中半扁椭球体的高度示意图；
图15为本发明发光器件实施例四的结构图；
图16为现有发光器件的光强分布图；
图17为本发明发光器件的光强分布图。
元件标号说明
10：透镜；20：LED芯片；30：封装层；40：电路层；50：电极；60：承载基板；61：通孔；70：散射混光层。
 本发明的实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
需要说明的是，下述实施例中未具体说明的部分均为现有结构或常规制作工艺，且下述实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的形态、数量及比例可为一种随意的改变，且其组件布局形态也可能更为复杂。
实施例一
如图1-6所示，本发明提供一种发光器件，包括：
彼此间隔的至少三个LED芯片20，至少三个LED芯片20被配置为发射各自波长的光，至少三个LED芯片20发光区域的最大直径D为1mm以下，每一个LED芯片20包含相对的第一表面、第二表面和连接于该第一表面和该第二表面之间的侧表面；
封装层30，覆盖至少三个LED芯片20的侧表面并填充该至少三个LED芯片20之间的间隙；
透镜10，设置于该至少三个LED芯片20的第一表面的上方，且覆盖该至少三个LED芯片20的发光区域。
本发明发光器件没有传统的基板或支架而是通过封装层30覆盖至少三个LED芯片20的侧表面并填充至少三个LED芯片20之间的间隙来实现至少三个LED芯片20的固定，这种结构不仅提升了生产效率，降低了LED的生产成本，而且无需通过固晶胶进行固晶，使得芯片之间的间距可以变小至30μm以下，能够更好的控制发光器件发光角度的一致性。本发明发光器件的至少三个LED芯片20发光区域上方设置有透镜10，改变了LED芯片20近似朗伯型的光场分布，而形成特殊光场分布，该特殊光场分布使得光能更加集中的照射到所要应用的区域，能够有效提高光能的利用率，降低了光源的能耗和成本，同时避免了光源对非照射区域的光污染等问题。另外本发明中发光器件发光区域的最大直径D为1mm以下，这样可以有效减小发光区域中心与透镜10中心的重合位置误差，能够有效减小发光器件的发光角度差异。
为了便于说明，本实施例中的发光器件包括 三个LED芯片20，但是需要说明的是本发明中发光器件也可仅包括三个LED 芯片或者三个以上的LED芯 片，例如四个、五个micro-led（100μm×100μm以下），只要其满足发光区域最大直径D小于1mm即可。该三个LED芯片20可发射不同的光，考虑到应用的广泛性，本实施例中的三个LED芯片20分别为R光芯片、G光芯片和B光芯片，可相对应的发射红光、绿光和蓝光。
本发明中LED芯片20第一表面的发光率原则上可以不做限定，但为了提高能效，较佳地，本实施例中所述封装层的发出光功率小于发光总功率的30%，即至少三个LED芯片20发射的光线70%以上从第一表面射出。
考虑到LED芯片20的光多从第一表面发出，而封装层30覆盖至少三个LED芯片20的侧表面并填充该至少三个LED芯片20之间的间隙，所以本发明中的封装层30颜色可以不做限定，但是为了减少光从封装层30透出所造成的非照射区域光污染，较佳地，本实施例中封装层30的透射率为30%以下的硅胶或树脂，例如其可以为30%以下的20%、10%或0%等，其透射率越小隔光效果越好，本实施例中封装层30的透射率为20%，其颜色可以采用黑色或其它深色系，这种黑色或深色系的封装层30能够提高显示器件的对比度。更佳地，封装层30优先选用透射率≤20%的有色硅胶或有色硅树脂。
本发明中的透镜10为凸起状一次封装透镜，只有一个出光表面，且出光表面向背离LED芯片20侧凸起，其凸起形状可以视需要达到的光场分布而进行调整，但为了实现X方向和Y方向不同的半值角，使LED横向照射区域大于纵向照射区域，较佳地，本实施例中的透镜10为半扁椭球体，所述透镜与封装层连接处形成的近似椭圆面(近似椭圆面是指该面的轮廓为近似或接近椭圆的形状), 近似椭圆面短轴方向对应半值角为α；长轴方向对应半值角β，其中α<β，20°<α<70°。α可以为25°、30°、50°、60°、65°等20°—70°之间的任一角度值，较佳地，本实施例中透镜10短轴方向对应的半值角α优选采用30°—50°之间的任一角度值，如35°、40°、45°等。
为了进一步收窄发光角度，本实施例中半椭球体的短轴长度a 与长轴长度b的比值a/b，满足以下条件0.4≤a/b≤0.9，并且短轴长度a大于等于发光区域的最大直径D的1.5倍。其中a/b可以为0.4、0.65、0.7、0.75、0.8、0.85、0.9等0.4-0.9（包括0.4与0.9）的任一数值。半椭球体的高度h＞0.5a。
为了达到更好的光场分布，减小芯片的发光角度差异，本实施例中从透镜10侧向LED芯片20侧俯视，至少三个LED芯片20的发光区域的几何中心与透镜10的光轴重合。
本实施例中的透镜10由硅胶或树脂经注塑工艺制成。制作时使用透镜10模具与连片的LED固定，在LED与透镜10模具间形成的空腔内部填充热固型明硅胶或环氧树脂，经过加热成型，形成透镜10模具形状的透镜10。
考虑到本发明中要求的发光区域的最大直径D不大于1mm，较佳地，本实施例中的LED芯片20优选采用尺寸在380μm×380μm以下的mini-led或者100μm×100μm以下的micro-led，本实施例中采用380μm×380μm以下的mini-led。
本实施例中三个LED芯片20之间的间距为50μm以下，其可以为40μm、30μm、20μm、10μm、5μm等。
考虑到本发明发光器件中通过封装层30即可实现LED芯片20的固定，较佳地，本实施例中的发光组件不具有用于承载LED芯片20的一封装基板，LED芯片20由封装层30固定位置。这种无封装基板的结构不仅提升了生产效率，降低了LED的生产成本，而且无需通过固晶胶进行固晶，使得芯片之间的间距可以变小至30μm以下，能够更好的控制发光器件发光角度的一致性。
本实施例中的三个LED芯片20可以呈多种排列方式，较佳地，为了便于制作，本实施例中的三个LED芯片20呈“一”字形排列分布，且通过其阴极或阳极通过共阴极或共阳极电接结构引出，发光器件背离第一表面的一侧设置有裸露的电极50，为了便于安装电极50为能够焊接的SMT电极。
本实施例中发光组件的电路层40可以单独设置绝缘层，也可以通过封装层进行绝缘，本实施例中所述电路层40设置在三个LED芯片20第二表面侧的封装层30内，并通过封装层30绝缘。
实施例二
如图7-9所示，本实施例提供一种发光器件，其与实施例一大体相同，不同之处在于，封装层30的下部设置有承载基板60，本实施例的封装层30下表面安装在承载基板60上，承载基板60的下表面设置有裸露的SMT电极50，发光器件的电路层40设置在承载基板60上侧的封装层30内，SMT电极50与电路层40的连接线从承载基板60上的通孔61内穿过。承载基板60可以为封装层30提供足够的刚性支撑，防止在高温下导致的封装层30变形。
实施例三
如图10-14所示，本实施例提供一种发光器件，其与实施例一大体相同，不同之处在于，本实施例中的三个LED芯片20，呈“品”字形排列分布，“品”字形排列的三个LED芯片20发光区域的最大直径D在1mm以下，与实施例一相同，本实施例中半椭球体的短轴长度a 与长轴长度b的比值a/b，仍满足以下条件0.4≤a/b≤0.9， 并且短轴长度a大于等于发光区域的最大直径D的1.5倍。其中a/b可以为0.4、 0.45、0.7、0.75、0.8、0.85、0.9等0.4-0.9（包括0.4与0.9）的任一数值。半椭球体的高度h＞0.5a。“品”字形的排列方式使每个LED芯片20之间间距接近，对混光比较有利。
实施例四
如图15所示，本实施例提供一种发光器件，其与实施例一大体相同，不同之处在于，三个LED芯片20上方还设置有散射混光层70。散射混光层70由散射粒子均匀分布在透光硅胶或树脂内固化成型。本发明发光器件中散射粒子可以为某一种具有散射功能的颗粒状物，也可以为多种散射粒子的组合，如SiO2、TiO2或者SiO2与TiO2的混合物。散射混光层70的设置可以改善LED芯片20的出光均匀性。如图17所示，本实施例中发光器件的光强分布相较图16中现有发光器件的光强分布更为集中。
实施例五
本实施例提供一种发光器件，其与实施例四大体相同，不同之处在于，本实施例中的三个LED芯片呈“品”字形排列分布，“品”字形排列的三个LED芯片20发光区域的最大直径D在1mm以下。
实施例六
本实施例提供一种显示屏，包括电气连接单元、箱体和屏体，所述屏体安装在所述箱体上，所述电气连接单元将所述屏体与外接电路相电连，所述屏体上安装有实施例一至实施例四中任一项的发光器件，发光器件用作像素点安装在屏体上，发光器件的电极50使用锡膏固定并与电气连接单元的显示屏线路板电连焊接。本发明显示屏采用本发明发光器件作为像素单元安装在显示屏上时，封装层30使得LED显示屏拼接后，邻近显示单元的光干扰大大降低。
实施例七
本实施例提供一种照明器材，包括架体和发光组件，所述发光组件安装在所述架体上，发光组件包括实施例一至实施例四中任一项的发光器件。
实施例八
本实施例提供一种发光器件的制作方法，包括以下步骤：
（1）提供至少三个LED芯片，该LED芯片包含相对的第一表面、第二表面和连接于该第一表面和该第二表面之间的侧表面，第二表面上分布有一对电极，将至少三个LED芯片的第一表面彼此间隔的粘附于胶带上，且使所述至少三个LED芯片的第二表面在同一平面上并朝上设置；
（2）形成封装层，使液态的有色硅胶或树脂填充所述至少三个LED芯片间的间隙，并覆盖每一所述LED芯片的侧表面，裸露出每一个所述LED芯片的电极表面，并凝固成型；
（3）在所述至少三个LED芯片的电极表面上形成电路层，并使所述电路层与所述至少三个LED芯片的电极连接；
（4）在所述电路层上制作绝缘层，并裸露出所述电路层的电极引出端；
（5）去除胶带；
（6）在所述至少三个LED芯片的第一表面上部制作散射混光层。
将颗粒状的散射粒子混入硅胶或树脂中，搅拌均匀，涂覆与封装层的上表面上并覆盖至少三个LED芯片的第一表面，涂覆完毕后凝固成型即完成散射混光层的制作。
（7）在LED芯片的出光面形成透镜。
将透镜模具固定在散射混光层上，在散射混光层与透镜模具间形成的空腔内部填充热固型明硅胶或环氧树脂，经过加热成型，形成透镜模具形状的透镜。
需要说明的是在不设置散射混光层结构时，可将透镜模具固定在封装层上，在封装层与透镜模具间形成的空腔内部填充热固型明硅胶或环氧树脂，经过加热成型，形成透镜模具形状的透镜。
综上所述，本发明发光器件没有传统的承载基板或支架而是通过封装层覆盖至少三个LED芯片的侧表面并填充至少三个LED芯片之间的间隙来实现至少三个LED芯片的固定，这种结构不仅提升了生产效率，降低了LED的生产成本，而且无需通过固晶胶进行固晶，使得芯片之间的间距可以变小至30μm以下，能够更好的控制发光器件发光角度的一致性。本发明发光器件的至少三个LED芯片发光区域上方设置有透镜，改变了LED芯片近似朗伯型的光场分布，而形成特殊光场分布，该特殊光场分布使得光能更加集中的照射到所要应用的区域，能够有效提高光能的利用率，降低了光源的能耗和成本，同时避免了光源对非照射区域的光污染等问题。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (25)

  1. 一种发光器件，包括：
    彼此间隔的至少三个LED芯片，所述至少三个LED芯片被配置为发射各自波长的光，其发光区域的最大直径D为1mm以下，每一个LED芯片包含相对的第一表面、第二表面和连接于该第一表面和该第二表面之间的侧表面；
    封装层，覆盖所述至少三个LED芯片的侧表面并填充该至少三个LED芯片之间的间隙；
    透镜，设置于所述该至少三个LED芯片的第一表面的上方，且覆盖该至少三个LED芯片的发光区域。
  2. 根据权利要求1所述的发光器件，其特征在于：所述封装层的发出光功率小于发光总功率的30%。
  3. 根据权利要求2所述的发光器件，其特征在于：所述封装层由透射率≤20%的有色硅胶或硅树脂填充。
  4. 根据权利要求1的发光器件，其特征在于：所述透镜与封装层连接面为近似椭圆，该椭圆的短轴长度a与长轴长度b的比值a/b 大于或等于0.4且小于或等于0.9，其中短轴长度a大于等于发光区域的最大直径D的1.5倍，所述半椭球体的高度h＞0.5a。
  5. 根据权利要求4所述的发光器件，其特征在于：所述透镜为半扁椭球体，所述透镜与封装层连接处形成的近似椭圆面，短轴方向对应的半值角为α；长轴方向对应半值角β，其中α<β，20°<α<70°。
  6. 根据权利要求4所述的发光器件，其特征在于：从所述透镜侧向所述LED芯片侧俯视，所述至少三个LED芯片的发光区域的几何中心与所述透镜的光轴重合。
  7. 根据权利要求1所述的发光器件，其特征在于：所述透镜由硅胶或树脂经注塑工艺制成。
  8. 根据权利要求1所述的发光器件，其特征在于：所述至少三个LED芯片的尺寸为380μm×380μm以下。
  9. 根据权利要求1所述的发光器件，其特征在于：所述至少三个LED芯片之间的间距为50μm以下。
  10. 根据权利要求1所述的发光器件，其特征在于：所述发光组件不具有用于承载所述LED芯片的一封装基板，所述LED芯片由所述封装层固定位置。
  11. 根据权利要求1所述的发光器件，其特征在于：所述封装层的下部设置有承载基板，所述承载基板的下表面设置有裸露的电极，所述发光器件的电路层设置在所述承载基板上侧的所述封装层内，所述电极与所述电路层的连接线从所述承载基板上的通孔内穿过。
  12. 根据权利要求1所述的发光器件，其特征在于，所述至少三个LED芯片上方还设置有散射混光层。
  13. 根据权利要求12所述的发光器件，其特征在于，所述散射混光层由散射粒子均匀分布在透光硅胶或树脂内固化成型。
  14. 根据权利要求1所述的发光器件，其特征在于，所述发光器件仅包括三个LED芯片，且分别为R光芯片、G光芯片和B光芯片。
  15. 根据权利要求14所述的发光器件，其特征在于，所述三个LED芯片呈“品”字形或“一”字形排列分布。
  16. 根据权利要求1所述的发光器件，其特征在于，所述至少三个LED芯片的阴极或阳极通过共阴极或共阳极电接结构引出。
  17. 根据权利要求1所述的发光器件，其特征在于，所述发光器件背离所述第一表面的一侧设置有裸露的电极。
  18. 根据权利要求17所述的发光器件，其特征在于，所述电极为能够焊接的SMT电极。
  19. 根据权利要求1所述的发光器件，其特征在于，所述发光组件的电路层设置在所述至少三个LED芯片第二表面侧的所述封装层内。
  20. 一种显示屏，包括电气连接单元、箱体和屏体，所述屏体安装在所述箱体上，其特征在于，还安装有权利要求1-19中任一项所述的发光器件，所述发光器件用作像素点安装在所述屏体上。
  21. 一种照明器材，包括架体和发光组件，所述发光组件安装在所述架体上，其特征在于，所述发光组件包括有权利要求1-19中任一项所述的发光器件。
  22. 一种发光器件的制作方法，其特征在于，包括以下步骤：
    （1）提供至少三个LED芯片，该LED芯片包含相对的第一表面、第二表面和连接于该第一表面和该第二表面之间的侧表面，第二表面上分布有一对电极，将至少三个LED芯片彼此间隔的粘附于胶带上，且使所述至少三个LED芯片的第二表面在同一平面上并朝上设置；
    （2）形成封装层，使其填充所述至少三个LED芯片间的间隙，并覆盖每一所述LED芯片的侧表面，裸露出每一个所述LED芯片的电极表面；
    （3）在所述至少三个LED芯片的电极表面上形成电路层，并使所述电路层与所述至少三个LED芯片的电极连接；
    （4）在所述电路层上制作绝缘层，并裸露出所述电路层的电极引出端；
    （5）去除胶带；
    （6）在LED芯片的出光面形成透镜。
  23. 根据权利要求22所述的制作方法，其特征在于，在步骤（5）和步骤（6）之间还包括在所述多个芯片的上部制作散射混光层的过程。
  24. 根据权利要求22所述的制作方法，其特征在于，所述封装层由透射率≤20%的有色硅胶或硅树脂固化成型。
  25. 根据权利要求22所述的制作方法，其特征在于，所述透镜由硅胶或树脂经注塑工艺制成。
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US20220165922A1 (en) 2022-05-26
EP4016649A4 (en) 2023-09-06

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