WO2021020008A1 - 基板処理装置、半導体装置の製造方法、プログラム及びガス供給システム - Google Patents
基板処理装置、半導体装置の製造方法、プログラム及びガス供給システム Download PDFInfo
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- WO2021020008A1 WO2021020008A1 PCT/JP2020/025776 JP2020025776W WO2021020008A1 WO 2021020008 A1 WO2021020008 A1 WO 2021020008A1 JP 2020025776 W JP2020025776 W JP 2020025776W WO 2021020008 A1 WO2021020008 A1 WO 2021020008A1
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- gas
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- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000007789 gas Substances 0.000 claims abstract description 654
- 239000011261 inert gas Substances 0.000 claims abstract description 121
- 230000008569 process Effects 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 21
- 235000012431 wafers Nutrition 0.000 description 86
- 238000002347 injection Methods 0.000 description 45
- 239000007924 injection Substances 0.000 description 45
- 238000006243 chemical reaction Methods 0.000 description 33
- 238000005192 partition Methods 0.000 description 30
- 239000002994 raw material Substances 0.000 description 26
- 229910000449 hafnium oxide Inorganic materials 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000005755 formation reaction Methods 0.000 description 18
- 238000010926 purge Methods 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 238000007599 discharging Methods 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003779 heat-resistant material Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 3
- 230000003313 weakening effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- CNRRZWMERIANGJ-UHFFFAOYSA-N chloro hypochlorite;molybdenum Chemical compound [Mo].ClOCl CNRRZWMERIANGJ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Definitions
- the present disclosure relates to a substrate processing device, a method for manufacturing a semiconductor device, a program, and a gas supply system.
- Patent Document 1 and Patent Document 2 describe a substrate processing apparatus for forming a film on the surface of a substrate (wafer) arranged in a processing chamber.
- the object of the present disclosure is to control the film thickness distribution of the film formed on the substrate.
- a processing gas nozzle that supplies processing gas into the processing chamber, Two or more inert gas nozzles provided so as to sandwich the treated gas nozzle in the circumferential direction at the center, and an inert gas nozzle for supplying the inert gas into the processing chamber.
- a processing gas supply unit that supplies processing gas to the processing gas nozzle, An inert gas supply unit that supplies the inert gas to each of the inert gas nozzles, Controlling the flow rate of the processing gas supplied from the processing gas supply unit to the processing gas nozzle and the flow rate of each inert gas supplied from the inert gas supply unit to each of the inert gas nozzles.
- the control unit that is configured to enable Technology is provided.
- FIG. 6A is a diagram showing a gas flow in the processing chamber in the first processing step of the film forming sequence of FIG.
- B is a figure which shows the film thickness distribution of the film formed on the substrate by the film formation sequence of FIG.
- FIG. 7A is a diagram showing a gas flow in the processing chamber in the first processing step of the film forming sequence of FIG. 7.
- B is a figure which shows the film thickness distribution of the film formed on the substrate by the film formation sequence of FIG.
- FIGS. 1 to 7 An example of the substrate processing apparatus according to the embodiment of the present disclosure will be described with reference to FIGS. 1 to 7.
- the arrow H shown in the figure indicates the device vertical direction (vertical direction), the arrow W indicates the device width direction (horizontal direction), and the arrow D indicates the device depth direction (horizontal direction).
- the substrate processing apparatus 10 includes a control unit 280 and a processing furnace 202 that control each unit, and the processing furnace 202 has a heater 207 that is a heating means.
- the heater 207 has a cylindrical shape and is installed in the vertical direction of the device by being supported by a heater base (not shown).
- the heater 207 also functions as an activation mechanism for activating the processing gas with heat.
- the details of the control unit 280 will be described later.
- a reaction tube 203 constituting a reaction vessel is arranged upright concentrically with the heater 207.
- the reaction tube 203 is formed of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- the substrate processing device 10 is a so-called hot wall type.
- the reaction tube 203 has a cylindrical inner tube 12 and a cylindrical outer tube 14 provided so as to surround the inner tube 12.
- the inner pipe 12 is arranged concentrically with the outer pipe 14, and a gap S is formed between the inner pipe 12 and the outer pipe 14.
- the inner pipe 12 is an example of a pipe member.
- the inner pipe 12 is formed in a ceiling shape with the lower end open and the upper end closed by a flat wall body.
- the outer pipe 14 is also formed in a ceiling shape in which the lower end is open and the upper end is closed by a flat wall body.
- a plurality of nozzle chambers 222 are formed in the gap S formed between the inner pipe 12 and the outer pipe 14. The details of the nozzle chamber 222 will be described later.
- a processing chamber 201 for processing the wafer 200 as a substrate is formed inside the inner tube 12. Further, the processing chamber 201 can accommodate a boat 217, which is an example of a substrate holder capable of holding wafers 200 in a horizontal posture and vertically arranged in multiple stages, and an inner tube 12 accommodates the accommodated wafer 200. Siege. The details of the inner pipe 12 will be described later.
- the lower end of the reaction tube 203 is supported by a cylindrical manifold 226.
- the manifold 226 is made of a metal such as nickel alloy or stainless steel, or is made of a heat resistant material such as quartz or SiC.
- a flange is formed at the upper end of the manifold 226, and the lower end of the outer pipe 14 is installed on the flange.
- An airtight member 220 such as an O-ring is arranged between the flange and the lower end of the outer pipe 14 to keep the inside of the reaction tube 203 airtight.
- a seal cap 219 is airtightly attached to the opening at the lower end of the manifold 226 via an airtight member 220 such as an O-ring, and the opening side at the lower end of the reaction tube 203, that is, the opening of the manifold 226 is airtight. It is blocked.
- the seal cap 219 is made of a metal such as nickel alloy or stainless steel, and is formed in a disk shape.
- the seal cap 219 may be configured to cover the outside with a heat-resistant material such as quartz or SiC.
- a boat support 218 that supports the boat 217 is provided on the seal cap 219.
- the boat support 218 is made of a heat-resistant material such as quartz or SiC and functions as a heat insulating portion.
- the boat 217 is erected on the boat support 218.
- the boat 217 is made of a heat resistant material such as quartz or SiC.
- the boat 217 has a bottom plate (not shown) fixed to the boat support 218 and a top plate arranged above the bottom plate, and a plurality of columns 217a (see FIG. 2) are erected between the bottom plate and the top plate. Has been done.
- the boat 217 holds a plurality of wafers 200 to be processed in the processing chamber 201 in the inner pipe 12.
- the plurality of wafers 200 are supported by the support columns 217a of the boat 217 in a state where they maintain a horizontal posture while being spaced apart from each other and are centered on each other, and the loading direction is the axial direction of the reaction tube 203. .. That is, the center of the wafer 200 is aligned with the central axis of the boat 217, and the central axis of the boat 217 coincides with the central axis of the reaction tube 203.
- a rotation mechanism 267 for rotating the boat is provided under the seal cap 219.
- the rotation shaft 265 of the rotation mechanism 267 is connected to the boat support 218 through the seal cap 219, and the rotation mechanism 267 rotates the boat 217 via the boat support 218 to rotate the wafer 200. ..
- the seal cap 219 is vertically raised and lowered by an elevator 115 as an elevating mechanism provided outside the reaction tube 203, and the boat 217 can be carried in and out of the processing chamber 201.
- Nozzle support portions 350a to 350e (see FIG. 3) that support gas nozzles 340a to 340e that supply gas to the inside of the processing chamber 201 are installed in the manifold 226 so as to penetrate the manifold 226 (FIG. 1). Only the gas nozzle 340a and the nozzle support portion 350a are shown in the above).
- the nozzle support portions 350a to 350e are made of a material such as nickel alloy or stainless steel.
- Gas supply pipes 310a to 310e for supplying gas to the inside of the processing chamber 201 are connected to one end of the nozzle support portions 350a to 350e, respectively. Further, gas nozzles 340a to 340e are connected to the other ends of the nozzle support portions 350a to 350e, respectively.
- the gas nozzles 340a to 340e are made of a heat-resistant material such as quartz or SiC. The details of the gas nozzles 340a to 340e and the gas supply pipes 310a to 310e will be described later.
- an exhaust port 230 is formed in the outer pipe 14 of the reaction pipe 203.
- the exhaust port 230 is formed below the second exhaust port 237, which will be described later, and an exhaust pipe 231 is connected to the exhaust port 230.
- a vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 that detects the pressure inside the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator. There is.
- the exhaust pipe 231 on the downstream side of the vacuum pump 246 is connected to a waste gas treatment device (not shown) or the like.
- vacuum exhaust can be performed so that the pressure inside the processing chamber 201 becomes a predetermined pressure (vacuum degree).
- a temperature sensor (not shown) as a temperature detector is installed inside the reaction tube 203, and processing is performed by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor.
- the temperature inside the chamber 201 is configured to have a desired temperature distribution.
- the boat 217 for loading a plurality of wafers 200 to be batch-processed in multiple stages is carried into the processing chamber 201 by the boat support 218. Then, the wafer 200 carried into the processing chamber 201 is heated to a predetermined temperature by the heater 207.
- An apparatus having such a processing furnace is called a vertical batch apparatus.
- the discharge portion of the discharge portion faces the supply slits 235a, 235b, 235c, which are examples of the supply holes, and the supply slits 235a, 235b, 235c.
- the first exhaust port 236, which is an example, is formed.
- a second exhaust port 237 which is an example of a discharge portion having an opening area smaller than that of the first exhaust port 236, is formed on the peripheral wall of the inner pipe 12 below the first exhaust port 236. ing.
- the supply slits 235a, 235b, 235c and the first exhaust port 236 and the second exhaust port 237 are formed at different positions in the circumferential direction of the inner pipe 12.
- the first exhaust port 236 formed in the inner pipe 12 is a region from the lower end side to the upper end side in which the wafer 200 of the processing chamber 201 is accommodated (hereinafter referred to as “wafer region”). May be formed).
- the first exhaust port 236 is formed so as to communicate the processing chamber 201 and the gap S, and the second exhaust port 237 is formed so as to exhaust the atmosphere below the processing chamber 201.
- the first exhaust port 236 is a gas exhaust port that exhausts the atmosphere inside the processing chamber 201 into the gap S, and the gas exhausted from the first exhaust port 236 passes through the gap S and the exhaust port 230. It is exhausted from the exhaust pipe 231 to the outside of the reaction pipe 203. Similarly, the gas exhausted from the second exhaust port 237 is exhausted from the exhaust pipe 231 to the outside of the reaction pipe 203 via the lower side of the gap S and the exhaust port 230.
- the gas after passing through the wafer 200 is exhausted via the outside of the cylinder portion, so that the difference between the pressure of the exhaust portion of the vacuum pump 246 or the like and the pressure of the wafer region is reduced to minimize the pressure loss. Can be. Then, by minimizing the pressure loss, the pressure in the wafer region can be lowered, the flow velocity in the wafer region can be increased, and the loading effect can be mitigated.
- a plurality of supply slits 235a formed on the peripheral wall of the inner pipe 12 are formed in a horizontally long slit shape in the vertical direction, and communicate the first nozzle chamber 222a and the processing chamber 201.
- the supply slits 235b are formed in a plurality of horizontally long slits in the vertical direction, and are arranged on the side of the supply slits 235a. Further, the supply slit 235b communicates the second nozzle chamber 222b with the processing chamber 201.
- a plurality of supply slits 235c are formed in a horizontally long slit shape in the vertical direction, and are arranged on the opposite side of the supply slit 235a with the supply slit 235b interposed therebetween. Further, the supply slit 235c communicates the third nozzle chamber 222c with the processing chamber 201.
- the gas supply efficiency can be improved by making the length of the inner pipes 12 of the supply slits 235a to 235c in the circumferential direction the same as the length of the nozzle chambers 222a to 222c in the circumferential direction.
- the supply slits 235a to 235c are smoothly formed so that the edge portions as the four corners draw a curved surface.
- R cliffs By performing R cliffs on the edge portion to form a curved surface, it is possible to suppress the stagnation of gas on the periphery of the edge portion, suppress the formation of a film on the edge portion, and further, the edge portion. It is possible to suppress the peeling of the film formed on the surface.
- openings for installing gas nozzles 340a to 340e in the corresponding nozzle chambers 222a to 222c of the nozzle chamber 222 (not shown). Is formed.
- the supply slits 235a to 235c are formed by adjoining wafers 200 and wafers 200 placed in a plurality of stages on a boat 217 (see FIG. 1) housed in the processing chamber 201 in the vertical direction. It is formed so that it is arranged between the two.
- the supply slits 235a to 235c extend from between the bottom wafer 200 and the bottom plate of the boat 217 that can be placed on the boat 217 to between the top wafer 200 and the top plate of the boat 217, respectively, the wafer 200, the bottom plate, and the top. It is desirable to form it so that it is located between the plates.
- the first exhaust port 236 is formed in the wafer region of the inner pipe 12, and the processing chamber 201 and the gap S communicate with each other.
- the second exhaust port 237 is formed from a position higher than the upper end of the exhaust port 230 to a position higher than the lower end of the exhaust port 230.
- the nozzle chamber 222 is formed in the gap S between the outer peripheral surface 12c of the inner tube 12 and the inner peripheral surface 14a of the outer tube 14.
- the nozzle chamber 222 includes a first nozzle chamber 222a extending in the vertical direction, a second nozzle chamber 222b extending in the vertical direction, and a third nozzle chamber 222c extending in the vertical direction. Further, the first nozzle chamber 222a, the second nozzle chamber 222b, and the third nozzle chamber 222c are formed side by side in the circumferential direction of the processing chamber 201 in this order.
- first partition 18a extending from the outer peripheral surface 12c of the inner pipe 12 toward the outer pipe 14 and the second partition 18b extending from the outer peripheral surface 12c of the inner pipe 12 toward the outer pipe 14
- a nozzle chamber 222 is formed between the arc-shaped top plate 20 and the inner tube 12 that connect the tip of the first partition 18a and the tip of the second partition 18b.
- a third partition 18c extending from the outer peripheral surface 12c of the inner tube 12 toward the top plate 20 side and a fourth partition 18d are formed, and the third partition 18c and the third partition 18c are formed.
- the fourth partition 18d is arranged in this order from the first partition 18a to the second partition 18b side.
- the top plate 20 is separated from the outer pipe 14. Further, the tip of the third partition 18c and the tip of the fourth partition 18d reach the top plate 20.
- the partitions 18a to 18d and the top plate 20 are examples of partition members.
- partitions 18a to 18d and the top plate 20 are formed from the ceiling portion of the nozzle chamber 222 to the lower end portion of the reaction tube 203.
- the first nozzle chamber 222a is formed by being surrounded by the inner pipe 12, the first partition 18a, the third partition 18c, and the top plate 20, and the second nozzle chamber 222b is formed.
- the third nozzle chamber 222c is formed by being surrounded by the inner tube 12, the fourth partition 18d, the second partition 18b, and the top plate 20.
- each of the nozzle chambers 222a to 222c has a ceiling shape in which the lower end is opened and the upper end is closed by the wall body forming the top surface of the inner pipe 12, and extends in the vertical direction.
- the supply slits 235a that communicate the first nozzle chamber 222a and the processing chamber 201 are arranged in the vertical direction and formed on the peripheral wall of the inner pipe 12. Further, the supply slits 235b that communicate the second nozzle chamber 222b and the processing chamber 201 are arranged in the vertical direction and formed on the peripheral wall of the inner pipe 12, and the supply slits that communicate the third nozzle chamber 222c and the processing chamber 201. 235c are formed on the peripheral wall of the inner pipe 12 side by side in the vertical direction.
- the third partition 18c and the fourth partition 18d do not have to be provided.
- the gas nozzles 340a to 340e are arranged in one nozzle chamber 222.
- the third partition 18c and the fourth partition 18d are not provided, the directivity of the N 2 gas flow is lowered and the controllability of the film thickness distribution is lowered. Therefore, it is necessary to increase the flow rate of the N 2 gas. is there.
- the third partition 18c and the fourth partition 18d are provided, the controllability of the film thickness distribution is improved and the flow rate of the N 2 gas can be reduced.
- the gas nozzles 340a to 340e extend in the vertical direction, and are installed in the nozzle chambers 222a to 222c, respectively, as shown in FIGS. 2 and 3.
- the gas nozzles 340b and 340c are used as processing gas nozzles for supplying the raw material gas or the reaction gas, which are the processing gases, into the processing chamber 201, respectively.
- the gas nozzles 340a to 340e are used as inert gas nozzles for supplying the inert gas into the processing chamber 201, respectively.
- a gas nozzle 340a communicating with the gas supply pipe 310a and a gas nozzle 340b communicating with the gas supply pipe 310b are arranged in the first nozzle chamber 222a. Further, the gas nozzle 340c communicating with the gas supply pipe 310c is arranged in the second nozzle chamber 222b. Further, the gas nozzle 340d communicating with the gas supply pipe 310d and the gas nozzle 340e communicating with the gas supply pipe 310e are arranged in the third nozzle chamber 222c.
- the gas nozzle 340c is provided between the gas nozzles 340a and 340b and the gas nozzles 340d and 340e in the circumferential direction of the processing chamber 201.
- two gas nozzles 340a and 340b and gas nozzles 340e and 340d are provided so as to sandwich the gas nozzle 340c in the circumferential direction. That is, two or more gas nozzles 340a and 340b as inert gas nozzles and gas nozzles 340e and 340d are provided on both sides of a straight line L passing through the gas nozzles 340c as processing gas nozzles and the first exhaust port 236 in a plan view.
- the gas nozzles 340a and 340b and the gas nozzles 340e and 340d as the inert gas nozzles are arranged line-symmetrically with the straight line L as the axis of symmetry, respectively.
- the gas nozzles 340a and 340b and the gas nozzles 340e and 340d as the inert gas nozzles do not necessarily have to be arranged line-symmetrically.
- the gas nozzles 340a and 340b and the gas nozzle 340c are partitioned by a third partition 18c, and the gas nozzle 340c and the gas nozzles 340d and 340e are partitioned by a fourth partition 18d.
- the gas nozzle 340c, the gas nozzles 340a and 340b, and the gas nozzles 340d and 340e are arranged in the partitioned spaces, respectively. As a result, it is possible to prevent the gas from being mixed between the nozzle chambers 222.
- the gas nozzles 340a, 340b, 340d, and 340e are each configured as an I-shaped (I-shaped) long nozzle.
- Injection holes 234a and 234e for injecting gas so as to face the supply slits 235a and 235c are formed on the peripheral surfaces of the gas nozzles 340a and 340e, respectively.
- the injection holes 234a and 234e of the gas nozzles 340a and 340e may be formed in the central portion of the vertical width of the supply slits 235a and 235c so as to correspond to the supply slits 235a and 235c one by one.
- 25 injection holes 234a and 234e are formed, respectively.
- the supply slits 235a and 235c and the injection holes 234a and 234e may be formed by the number of wafers 200 to be mounted + 1.
- the range in which the injection holes 234a and 234e are formed in the vertical direction covers the range in which the wafer 200 is arranged in the vertical direction.
- injection holes 234b and 234d for injecting gas so as to face each of the supply slits 235a and 235c are formed on the peripheral surfaces of the gas nozzles 340b and 340d, respectively.
- the injection holes 234b and 234d of the gas nozzles 340b and 340d may be formed in the central portion of the vertical width of the supply slits 235a and 235c so as to correspond to the supply slits 235a and 235c one by one.
- a plurality of injection holes 234b and 234d are formed side by side in the vertical direction in the upper and lower portions of the gas nozzles 340b and 340d in the vertical direction.
- the injection holes 234b and 234d formed in the upper portions of the gas nozzles 340b and 340d cover the range in which the uppermost wafer 200 is arranged in the vertical direction. Further, the injection holes 234b and 234d formed in the lower portion of the gas nozzles 340b and 340d cover the range in which the lowermost wafer 200 is arranged in the vertical direction.
- the injection holes 234a, 234b, 234d, and 234e are pinhole-shaped. Further, the injection direction in which the gas is injected from the injection holes 234a, 234b, 234d, 234e is directed to the center of the processing chamber 201 when viewed from above, and is as shown in FIG. 4 when viewed from the side. Between the wafers 200 and the wafer 200, it faces the upper portion of the upper surface of the uppermost wafer 200 or the lower portion of the lower surface of the lowermost wafer 200. Further, the injection directions in which the gas is injected from the respective injection holes 234a, 234b, 234d, and 234e are the same.
- the gas nozzle 340c is configured as a U-shaped (U-shaped) gas nozzle folded back at the upper end. Further, the gas nozzle 340c is formed with a pair of slit-shaped injection holes 234c-1 and 234c-2 extending in the vertical direction. Specifically, the injection holes 234c-1 and 234c-2 are formed in the portions extending in the vertical direction of the gas nozzle 340c, respectively. Further, the range in which the injection holes 234c-1 and 234c-2 are formed in the vertical direction covers the range in which the wafer 200 is arranged in the vertical direction in the vertical direction. Further, the pair of injection holes 234c-1 and 234c-2 are formed so as to face each of the supply slits 235b.
- the gas injected from the injection holes 234a, 234b, 234c-1,234c-2, 234d, 234e of the gas nozzles 340a to 340e is supplied to the inner pipe 12 forming the front wall of each nozzle chamber 222a to 222c. It is supplied to the processing chamber 201 through the slits 235a to 235c. Then, the gas supplied to the processing chamber 201 flows along the upper surface and the lower surface of each wafer 200 (see the arrow in FIG. 4).
- the gas supply pipe 310a communicates with the gas nozzle 340a via the nozzle support portion 350a
- the gas supply pipe 310b communicates with the gas nozzle 340b via the nozzle support portion 350b.
- the gas supply pipe 310c communicates with the gas nozzle 340c via the nozzle support portion 350c
- the gas supply pipe 310d communicates with the gas nozzle 340d via the nozzle support portion 350d
- the gas supply pipe 310e communicates with the gas nozzle 340e via the nozzle support portion 350e.
- the gas supply pipe 310a includes an inert gas supply source 360a that supplies an inert gas as a processing gas in order from the upstream side in the gas flow direction, a mass flow controller (MFC) 320a that is an example of a flow rate controller, and an opening / closing.
- MFC mass flow controller
- a valve 330a which is a valve, is provided respectively.
- the first inert gas supply unit is composed of the inert gas supply source 360a, the MFC320a, and the valve 330a.
- the gas supply pipe 310b is provided with a first raw material gas supply source 360b, an MFC320b, and a valve 330b that supply a first raw material gas (also called a reaction gas or a reactor) as a processing gas in order from the upstream side in the gas flow direction.
- a first raw material gas also called a reaction gas or a reactor
- the first processing gas supply unit is composed of the first raw material gas supply source 360b, the MFC320b, and the valve 330b.
- the second raw material gas supply source 360c, MFC320c, and valve 330c that supply the second raw material gas (also referred to as raw material gas or source gas) as the processing gas to the gas supply pipe 310c in order from the upstream direction in the gas flow direction.
- the second raw material gas supply source 360c, the MFC 320c, and the valve 330c form a second processing gas supply unit.
- the processing gas supply system is configured by the second processing gas supply unit.
- the gas supply pipe 310d is provided with an inert gas supply source 360d, an MFC320d, and a valve 330d, which supply an inert gas as a processing gas, in order from the upstream direction in the gas flow direction.
- the second inert gas supply unit is composed of the inert gas supply source 360d, MFC320d, and valve 330d.
- the gas supply pipe 310e is provided with an inert gas supply source 360e, an MFC320e, and a valve 330e, which supply an inert gas as a processing gas, in order from the upstream direction in the gas flow direction.
- the inert gas supply source 360e, MFC320e, and valve 330e constitute a third inert gas supply unit.
- a gas supply pipe 310f for supplying an inert gas as a processing gas is connected downstream of the valve 330b of the gas supply pipe 310b in the gas flow direction.
- the gas supply pipe 310f is provided with an inert gas supply source 360f, an MFC320f, and a valve 330f, which supply an inert gas as a processing gas, in order from the upstream direction in the gas flow direction.
- the inert gas supply source 360f, MFC320f, and valve 330f form a fourth inert gas supply unit.
- a gas supply pipe 310 g for supplying an inert gas as a processing gas is connected to the downstream side in the gas flow direction with respect to the valve 330c of the gas supply pipe 310c.
- the gas supply pipe 310 g is provided with an inert gas supply source 360 g, an MFC 320 g, and a valve 330 g, which supply an inert gas as a processing gas, in order from the upstream direction in the gas flow direction.
- the fifth inert gas supply unit is composed of the inert gas supply source 360 g, the MFC 320 g, and the valve 330 g.
- the inert gas supply sources 360a, 360d, 360e, 360f, 360g for supplying the inert gas are connected to a common supply source. Further, the inert gas supply system is configured by the above-mentioned first to fourth inert gas supply units. Further, the gas supply system is composed of the above-mentioned treated gas supply system and the inert gas supply system.
- examples of the first raw material gas supplied from the first raw material gas supply source 360b include ozone (O 3 ) gas and the like.
- examples of the second raw material gas supplied from the second raw material gas supply source 360c include a hafnium (Hf) -containing gas (hereinafter, simply referred to as Hf gas) and the like.
- the raw material of Hf gas is a gas containing at least an Hf element and an amino group (NR-).
- R is hydrogen (H), an alkyl group, or the like.
- Such raw materials include tetrakis (ethylmethylamide) hafnium (TEMAHf).
- the raw material of Hf gas may be a material further containing a cyclopentane group (Cp).
- examples of the inert gas supplied from the respective inert gas supply sources 360a, 360d, 360e, 360f, 360g include nitrogen (N 2 ) gas and the like.
- the circumferential length of the processing chamber 201 As for the circumferential length of the processing chamber 201, the circumferential length of the first nozzle chamber 222a, the circumferential length of the second nozzle chamber 222b, and the circumferential length of the third nozzle chamber 222c. However, it is said to have the same length.
- the first nozzle chamber 222a, the second nozzle chamber 222b, and the third nozzle chamber 222c are examples of supply chambers.
- FIG. 5 is a block diagram showing a control configuration of the substrate processing apparatus 10, and the control unit 280 (so-called controller) of the substrate processing apparatus 10 is configured as a computer.
- This computer includes a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.
- CPU Central Processing Unit
- RAM Random Access Memory
- the RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus 121e.
- An input / output device 122 configured as a touch panel or the like is connected to the control unit 280.
- the storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program for controlling the operation of the substrate processing device, a process recipe in which the procedures and conditions for substrate processing described later are described, and the like are readablely stored.
- the process recipe is a combination of the process recipes so that the control unit 280 executes each procedure in the substrate processing process described later so that a predetermined result can be obtained, and functions as a program.
- process recipes, control programs, etc. are collectively referred to simply as programs.
- the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.
- the I / O port 121d is connected to the above-mentioned MFC 320a to 320g, valves 330a to 330g, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor, rotation mechanism 267, elevator 115 and the like.
- the CPU 121a is configured to read and execute a control program from the storage device 121c and read a process recipe from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like.
- the CPU 121a is configured to control the flow rate adjusting operation of various gases by the MFC 320a to 320g, the opening / closing operation of the valves 330a to 330g, and the opening / closing operation of the APC valve 244 according to the contents of the read process recipe. Further, the CPU 121a is configured to control the pressure adjusting operation by the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, and the temperature adjusting operation of the heater 207 based on the temperature sensor. Further, the CPU 121a is configured to control the rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, the ascending / descending operation of the boat 217 by the elevator 115, and the like.
- the control unit 280 is not limited to the case where it is configured as a dedicated computer, and may be configured as a general-purpose computer.
- the control unit 280 of the present embodiment can be configured by preparing an external storage device 123 in which the above-mentioned program is stored and installing the program on a general-purpose computer using the external storage device 123.
- the external storage device include a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as MO, and a semiconductor memory such as a USB memory.
- FIG. 6 shows an example of a film forming sequence when a film is formed on the wafer 200 under the condition of strengthening the convexity.
- FIG. 7 shows an example of a film forming sequence when a film is formed on the wafer 200 under the condition of weakening the convexity.
- a boat 217 on which a predetermined number of wafers 200 are placed is carried into the reaction tube 203 in advance, and the reaction tube 203 is airtightly closed by the seal cap 219.
- control unit 280 When the control by the control unit 280 is started, the control unit 280 operates the vacuum pump 246 and the APC valve 244 shown in FIG. 1 to exhaust the atmosphere inside the reaction tube 203 from the exhaust port 230. Further, the control unit 280 controls the rotation mechanism 267 and starts the rotation of the boat 217 and the wafer 200. It should be noted that this rotation is continuously performed at least until the processing on the wafer 200 is completed.
- the first processing step, the first purging step, the first discharging step, the second treating step, the second purging step and the second discharging step are performed in one cycle. Then, this one cycle is repeated a predetermined number of times to complete the film formation on the wafer 200. Then, when this film formation is completed, the boat 217 is carried out from the inside of the reaction tube 203 by the reverse procedure of the above-mentioned operation. Further, the wafer 200 is transferred from the boat 217 to the pod of the transfer shelf by a wafer transfer machine (not shown), and the pod is transferred from the transfer shelf to the pod stage by the pod transfer machine and by an external transfer device. , Is carried out of the housing.
- the control unit 280 opens the valves 330c and 330g and operates the injection holes 234c-1 of the gas nozzle 340c.
- Hf gas as a second raw material gas and N 2 gas as a carrier gas are injected from 234c-2. That is, the control unit 280 ejects Hf gas and N 2 gas from the injection holes 234c-1,234c-2 of the gas nozzle 340c arranged in the second nozzle chamber 222b.
- control unit 280 opens the valves 330a, 330d, 330e, 330f and injects N 2 gas as an inert gas from the injection holes 234a, 234b, 234d, 234e of the gas nozzles 340a, 340b, 340d, 340e. Let me.
- control unit 280 operates the vacuum pump 246 and the APC valve 244 so that the pressure obtained from the pressure sensor 245 becomes constant, discharges the atmosphere inside the reaction tube 203 from the exhaust port 230, and discharges the atmosphere inside the reaction tube 203 from the exhaust port 230.
- the inside of is a negative pressure.
- the Hf gas flows in parallel on the wafer 200, then flows from the upper part to the lower part of the gap S through the first exhaust port 236 and the second exhaust port 237, and from the exhaust pipe 231 through the exhaust port 230. It is exhausted.
- control unit 280 sets the flow rate of the Hf gas supplied into the processing chamber 201 by the MFC 320c, 320g and the flow rate of the N 2 gas supplied into the processing chamber 201 by the MFC 320a, 320d, 320e, 320f. Control each. Specifically, the control unit 280, the gas nozzle 340a, 340b, 340d, among 340e, and the flow rate of N 2 gas supplied to the gas nozzles 340b close to the gas nozzle 340 c, and supplies the gas nozzle 340d close to the gas nozzle 340 c N 2 Make the flow rate of gas the same.
- control unit 280 determines the flow rate of the N 2 gas supplied to the gas nozzle 340a far from the gas nozzle 340c and the flow rate of the N 2 gas supplied to the gas nozzle 340e far from the gas nozzle 340c among the gas nozzles 340a, 340b, 340d and 340e. Make it the same. Further, the control unit 280 supplies the total flow rate of N 2 gas supplied to the gas nozzles 340a and 340b provided on the right side in the circumferential direction of the gas nozzle 340c and the N 2 gas supplied to the gas nozzles 340d and 340e provided on the left side in the circumferential direction of the gas nozzle 340c. Control so that the total flow rates of are equal.
- control unit 280 controls so that the left and right flow rates of the gas nozzles 340a and 340b provided on both sides of the gas nozzle 340c and the N 2 gas supplied to the gas nozzles 340d and 340e are the same (equal). That is, in the control unit 280, the flow rate of the N 2 gas supplied by the MFC 320a, 320d, 320e, 320f to the gas nozzles 340a, 340b, 340d, 340e provided on both sides of the gas nozzle 340c is the gas nozzle 340c for supplying the Hf gas.
- the flow rate of N 2 gas is symmetrical with respect to the center, that is, the left side and the right side are controlled to be the same centering on the gas nozzle 340c.
- the flow rate of the N 2 gas supplied to the gas nozzles 340a, 340b, 340d, and 340e has been described, the description is not limited to this, and the amount of the N 2 gas supplied to the gas nozzles 340a, 340b, 340d, and 340e, respectively.
- the pressure and concentration distribution may be controlled so as to be symmetrical (same on the left side and the right side) about the gas nozzle 340c.
- the control unit 280 makes the flow rate of the N 2 gas supplied to the gas nozzles 340b and 340d close to the gas nozzle 340c larger than the flow rate of the N 2 gas supplied to the gas nozzles 340a and 340e far from the gas nozzle 340c.
- control unit 280 determines the ratio of the flow rate of the N 2 gas supplied to the gas nozzles 340b and 340d close to the gas nozzle 340c and the flow rate of the N 2 gas supplied to the gas nozzles 340a and 340e far from the gas nozzle 340c. It is preferable that the flow rate is 4.5 or more and does not exceed the flow rate of the N 2 gas supplied to the gas nozzle 340c. Thereby, the flow of the N 2 gas supplied from the gas nozzles 340b and 340d close to the gas nozzle 340c for supplying the Hf gas can be assisted by the N 2 gas supplied from the gas nozzles 340a and 340e far from the gas nozzle 340c.
- the processing conditions in this process include N 2 gas supply flow rate supplied from the gas nozzle 340e: 1 slm N 2 gas supply flow rate supplied from the gas nozzle 340d: 4.5 slm Hf gas supply flow rate supplied from the gas nozzle 340c: 0.12 slm, N 2 gas supply flow rate: 26.5 slm N 2 gas supply flow rate supplied from the gas nozzle 340b: 4.5 slm N 2 gas supply flow rate supplied from the gas nozzle 340a: 1 slm Processing pressure: 1 to 1000 Pa, preferably 1 to 300 Pa, more preferably 100 to 250 Pa Treatment temperature: room temperature to 600 ° C., preferably 90 to 550 ° C., more preferably 450 to 550 ° C., still more preferably 200 to 300 ° C. Is exemplified.
- the processing temperature is preferably set to a temperature lower than the temperature at which the raw material gas is decomposed.
- the supply flow rate of the carrier gas (the supply flow rate of the N 2 gas supplied from the gas nozzle 340c) is increased with respect to the supply flow rate of the Hf gas. That is, the control unit 280 controls the flow rate of the Hf gas supplied to the gas nozzle 340c to be smaller than the flow rate of the N 2 gas supplied to the gas nozzle 340c. Further, the control unit 280 controls the flow rate of the N 2 gas supplied to the gas nozzle 340c so as to be larger than the flow rate of the N 2 gas supplied to the gas nozzles 340a, 340b, 340d, 340e. As a result, the dilution of Hf gas is suppressed.
- control unit 280 may make the flow rate of the N 2 gas supplied to the gas nozzles 340b and 340d close to the gas nozzle 340c smaller than the flow rate of the N 2 gas supplied to the gas nozzles 340a and 340e far from the gas nozzle 340c. Good.
- the flow rate of the N 2 gas supplied to the gas nozzles 340b and 340d close to the gas nozzle 340c is increased, the Hf gas as the second raw material gas may be diluted.
- the control unit 280 closes the valve 330c and stops the supply of Hf gas from the gas nozzle 340c. Further, the control unit 280 supplies N 2 gas as a purge gas to the processing chamber 201 from the gas nozzles 340a to 340e by increasing the supply flow rate of the N 2 gas by the MFC 320f and 320g, respectively, as compared with the first processing step. , The gas staying inside the reaction tube 203 is purged out from the exhaust port 230.
- the processing conditions in this process include N 2 gas supply flow rate supplied from the gas nozzle 340e: 1 slm N 2 gas supply flow rate supplied from the gas nozzle 340d: 4.5 slm N 2 gas supply flow rate supplied from the gas nozzle 340c: 10 slm N 2 gas supply flow rate supplied from the gas nozzle 340b: 5 slm N 2 gas supply flow rate supplied from the gas nozzle 340a: 1 slm Is exemplified.
- control unit 280 controls the vacuum pump 246 and the APC valve 244, increases the degree of negative pressure inside the reaction tube 203, and exhausts the atmosphere inside the reaction tube 203 from the exhaust port 230.
- the control unit 280 opens the valves 330b and 330f to operate the O 3 gas as the first raw material gas and the carrier gas from the injection hole 234b of the gas nozzle 340b. Inject N 2 gas. That is, the control unit 280 ejects O 3 gas and N 2 gas from the injection hole 234b of the gas nozzle 340b arranged in the first nozzle chamber 222a.
- control unit 280 opens the valves 330a, 330d, 330e, 330g and uses the injection holes 234a, 234c-1,234c-2, 234d, 234e of the gas nozzles 340a, 340c, 340d, 340e as an inert gas. Inject N 2 gas.
- control unit 280 operates the vacuum pump 246 and the APC valve 244 so that the pressure obtained from the pressure sensor 245 becomes constant, discharges the atmosphere inside the reaction tube 203 from the exhaust port 230, and discharges the atmosphere inside the reaction tube 203 from the exhaust port 230.
- the inside of is a negative pressure.
- the first raw material gas flows in parallel on the wafer 200, then flows from the upper part to the lower part of the gap S through the first exhaust port 236 and the second exhaust port 237, and flows through the exhaust port 230 through the exhaust pipe. It is exhausted from 231.
- the processing conditions in this process include N 2 gas supply flow rate supplied from the gas nozzle 340e: 1 slm N 2 gas supply flow rate supplied from the gas nozzle 340d: 4.5 slm N 2 gas supply flow rate supplied from the gas nozzle 340c: 4.5 slm O 3 gas supply flow rate supplied from the gas nozzle 340b: 22 slm, N 2 gas supply flow rate: 1.5 slm N 2 gas supply flow rate supplied from the gas nozzle 340a: 1 slm Is exemplified.
- the control unit 280 closes the valve 330b and stops the supply of O 3 gas from the gas nozzle 340b. Further, the control unit 280 increases the supply flow rate of the N 2 gas by the MFC 320f, supplies the N 2 gas as the purge gas from the gas nozzles 340a to 340e to the processing chamber 201, and the gas staying inside the reaction tube 203. Is purged out from the exhaust port 230.
- the processing conditions in this process include N 2 gas supply flow rate supplied from the gas nozzle 340e: 1 slm N 2 gas supply flow rate supplied from the gas nozzle 340d: 4.5 slm N 2 gas supply flow rate supplied from the gas nozzle 340c: 4.5 slm N 2 gas supply flow rate supplied from the gas nozzle 340b: 10 slm N 2 gas supply flow rate supplied from the gas nozzle 340a: 1 slm Is exemplified.
- control unit 280 closes the valves 330a to 330g and stops the supply of N 2 gas from the gas nozzles 340a to 340e.
- control unit 280 controls the vacuum pump 246 and the APC valve 244, increases the degree of negative pressure inside the reaction tube 203, and exhausts the atmosphere inside the reaction tube 203 from the exhaust port 230.
- the first treatment step, the first purge step, the first discharge step, the second treatment step, the second purge step and the second discharge step are set as one cycle, and this is repeated a predetermined number of times.
- an HfO film is formed on the wafer 200 so as to strengthen the convexity, and the process is completed.
- the control unit 280 opens the valves 330c and 330g and operates the injection holes 234c-1 of the gas nozzle 340c.
- Hf gas as a second raw material gas and N 2 gas as a carrier gas are injected from 234c-2. That is, the control unit 280 ejects Hf gas and N 2 gas from the injection holes 234c-1,234c-2 of the gas nozzle 340c arranged in the second nozzle chamber 222b.
- control unit 280 opens the valves 330a, 330d, 330e, 330f to inject N 2 gas as an inert gas from the injection holes 234a, 234b, 234d, 234e of the gas nozzles 340a, 340b, 340d, 340e. ..
- control unit 280 operates the vacuum pump 246 and the APC valve 244 so that the pressure obtained from the pressure sensor 245 becomes constant, discharges the atmosphere inside the reaction tube 203 from the exhaust port 230, and discharges the atmosphere inside the reaction tube 203 from the exhaust port 230.
- the inside of is a negative pressure.
- the Hf gas flows in parallel on the wafer 200, then flows from the upper part to the lower part of the gap S through the first exhaust port 236 and the second exhaust port 237, and from the exhaust pipe 231 through the exhaust port 230. It is exhausted.
- control unit 280 sets the flow rate of the Hf gas supplied into the processing chamber 201 by the MFC 320c, 320g and the flow rate of the N 2 gas supplied into the processing chamber 201 by the MFC 320a, 320d, 320e, 320f. Control each. Specifically, the control unit 280 makes the flow rate of the N 2 gas supplied to the gas nozzle 340d and the flow rate of the N 2 gas supplied to the gas nozzle 340e the same among the gas nozzles 340a, 340b, 340d, and 340e.
- control unit 280 makes the flow rate of the N 2 gas supplied to the gas nozzle 340a and the flow rate of the N 2 gas supplied to the gas nozzle 340b the same among the gas nozzles 340a, 340b, 340d, and 340e. That is, the control unit 280 supplies the flow rate of N 2 gas to the gas nozzles 340a and 340b arranged on the right side in the circumferential direction of the gas nozzle 340c and the N 2 supplied to the gas nozzles 340d and 340e arranged on the left side in the circumferential direction of the gas nozzle 340c. Make the flow rate of gas different.
- the control unit 280 makes the flow rate of the N 2 gas supplied to the gas nozzles 340b and 340a on the right side in the circumferential direction of the gas nozzle 340c smaller than the flow rate of the N 2 gas supplied to the gas nozzles 340d and 340e on the left side in the circumferential direction of the gas nozzle 340c. To do. That is, the control unit 280 controls so that the flow rate of the N 2 gas supplied to the gas nozzles 340a, 340b, 340d, and 340e is asymmetrical with respect to the gas nozzle 340c, that is, different from the left side and the right side with respect to the gas nozzle 340c.
- the description is not limited to this, and the amount of the N 2 gas supplied to the gas nozzles 340a, 340b, 340d, and 340e, respectively.
- the pressure and concentration distribution may be controlled so as to be asymmetrical (different between the left side and the right side) around the gas nozzle 340c.
- the processing conditions in this process include N 2 gas supply flow rate supplied from the gas nozzle 340e: 12 to 19 slm N 2 gas supply flow rate supplied from the gas nozzle 340d: 12 to 19 slm Hf gas supply flow rate supplied from the gas nozzle 340c: 0.12 slm, N 2 gas supply flow rate: 14 to 26.5 slm N 2 gas supply flow rate supplied from the gas nozzle 340b: 1 slm N 2 gas supply flow rate supplied from the gas nozzle 340a: 1 slm Processing pressure: 1 to 1000 Pa, preferably 1 to 300 Pa, more preferably 100 to 250 Pa Treatment temperature: room temperature to 600 ° C., preferably 90 to 550 ° C., more preferably 450 to 550 ° C., still more preferably 200 to 300 ° C. Is exemplified.
- the processing temperature is preferably set to a temperature lower than the temperature at which the raw material gas is decomposed.
- the supply flow rate of the carrier gas (the supply flow rate of the N 2 gas supplied from the gas nozzle 340c) is increased with respect to the supply flow rate of the Hf gas. That is, the control unit 280 controls the flow rate of the Hf gas supplied to the gas nozzle 340c to be smaller than the flow rate of the N 2 gas supplied to the gas nozzle 340c. Further, the control unit 280 controls the flow rate of the N 2 gas supplied to the gas nozzle 340c so as to be smaller than the total flow rate of the N 2 gas supplied to the gas nozzles 340d and 340e.
- control unit 280 controls the flow rate of the N 2 gas supplied to the gas nozzle 340c so as to be larger than the total flow rate of the N 2 gas supplied to the gas nozzles 340a and 340b. Further, the control unit 280 controls so that the total flow rate of the N 2 gas supplied to the gas nozzles 340a and 340b is smaller than the total flow rate of the N 2 gas supplied to the gas nozzles 340d and 340e.
- the flow rate of the N 2 gas supplied to the gas nozzles 340a and 340b is a flow rate capable of suppressing the backflow in the gas nozzle, respectively.
- the first processing step, the above-mentioned first purging step, the first discharging step, the second processing step, the second purging step and the second discharging step are set as one cycle, and this is repeated a predetermined number of times.
- an HfO film is formed on the wafer 200 so as to weaken the convexity, and the process is completed.
- gas nozzles 340a and 340b for supplying N 2 gas as an inert gas and gas nozzles 340d and 340e are provided on both sides of the gas nozzle 340c through which the Hf gas as the second raw material gas flows. Have been placed. Further, MFC320a, 320d, 320e, 320f are provided between the gas nozzles 340a, 340b, 340d, 340e and the inert gas supply sources 360a, 360d, 360e, 360f for supplying N 2 gas to these gas nozzles, respectively. And each is controlled independently.
- MFC320c and 320g are provided between the gas nozzle 340c and the second raw material gas supply source 360c for supplying Hf gas, and between the gas nozzle 340c and the inert gas supply source 360g for supplying N 2 gas, respectively. ..
- the supply amount of N 2 gas injected from the injection hole 234a of the nozzle 340a, the supply amount of N 2 gas injected from the injection hole 234b of the gas nozzle 340b, N 2 gas injected from the injection hole 234d of the gas nozzle 340d And the supply amount of N 2 gas injected from the injection hole 234e of the gas nozzle 340e can be controlled respectively. Further, the supply amount of Hf gas and the supply amount of N 2 gas injected from the injection holes 234c-1,234c-2 of the gas nozzle 340c can be controlled respectively.
- a gas nozzle 340c supplies Hf gas as the second source gas
- the gas nozzle 340a supplies N 2 gas as the inert gas
- 340b the N 2 gas as an inert gas Is sandwiched between the gas nozzles 340d and 340e that supply the gas.
- the control unit 280 is formed on the wafer 200 by controlling the flow rates of the inert gases supplied from the gas nozzles 340a, 340b, 340d, and 340e on both sides of the gas nozzle 340c, respectively.
- the film thickness distribution of the film can be controlled.
- control unit 280 controls the MFC 320c and 320 g to inject the supply amount of N 2 gas from the injection holes 234c-1,234-2 from the injection holes 234c-1,234-2. Increase each for the amount of supply to be made.
- the N 2 gas prevents the diffusion of the Hf gas, and the Hf gas is the wafer 200. It reaches the center. Therefore, the variation in the film thickness of the film formed on the wafer 200 can be suppressed as compared with the case where the supply amount of N 2 gas is smaller than the supply amount of Hf gas.
- the substrate processing apparatus 610 includes a nozzle chamber 622b corresponding to the second nozzle chamber 222b of the above-described embodiment, and does not include the first nozzle chamber 222a and the third nozzle chamber 222c of the above-described embodiment.
- the nozzle chamber 622b is provided with a gas nozzle 640c corresponding to the gas nozzle 340c of the above-described embodiment.
- the gas nozzle 640a corresponding to the gas nozzle 340a of the above-described embodiment and the gas nozzle 640b corresponding to the gas nozzle 340b are close to the right side in the circumferential direction of the gas nozzle 640c and are located between the inner peripheral surface 12a in the processing chamber 201 and the wafer 200. It is provided in the space. Further, the gas nozzle 640d corresponding to the gas nozzle 340d of the above-described embodiment and the gas nozzle 640e corresponding to the gas nozzle 340e are close to the left side in the circumferential direction of the gas nozzle 640c and are located between the inner peripheral surface 12a in the processing chamber 201 and the wafer 200. It is provided in the space of.
- the gas nozzles 640a and 640b for supplying N 2 gas and the gas nozzles 640e and 640d are symmetrically provided around the gas nozzle 640c for supplying Hf gas. That is, two or more gas nozzles 640a and 640b as inert gas nozzles and gas nozzles 640e and 640d are provided on both sides of a straight line L passing through the gas nozzles 640c as processing gas nozzles and the first exhaust port 236 in a plan view.
- the gas nozzles 640a and 640b and the gas nozzles 640e and 640d as the inert gas nozzles are arranged line-symmetrically with the straight line L as the axis of symmetry, respectively.
- the gas nozzles 640a and 640b and the gas nozzles 640e and 640d as the inert gas nozzles do not necessarily have to be arranged line-symmetrically.
- the substrate processing apparatus 610 it is possible to control the film thickness distribution of the HfO film formed on the wafer 200 by using the film formation sequences shown in FIGS. 6 and 7 described above.
- the substrate processing apparatus 710 includes a gas nozzle 740b corresponding to the gas nozzle 340b of the above-described embodiment and a gas nozzle 740d corresponding to the gas nozzle 340d of the above-described embodiment.
- the gas nozzles 740b and 740d are formed with a plurality of pinhole-shaped injection holes 734b and 734d arranged in the vertical direction.
- the range in which the injection holes 734b and 734d are formed in the vertical direction covers the range in which the wafer 200 is arranged in the vertical direction.
- the gas nozzles 340a and 740b for supplying N 2 gas and the gas nozzles 740d and 340e are symmetrically provided around the gas nozzle 340c for supplying Hf gas.
- the substrate processing apparatus 710 it is possible to control the film thickness distribution of the HfO film formed on the wafer 200 by using the film formation sequences shown in FIGS. 6 and 7 described above.
- the substrate processing apparatus 810 includes a gas nozzle 840b corresponding to the gas nozzle 340b of the above-described embodiment and a gas nozzle 840d corresponding to the gas nozzle 340d of the above-described embodiment.
- a plurality of pinhole-shaped injection holes 834b are formed in the gas nozzle 840b in the upper portion in the vertical direction of the gas nozzle 840b side by side in the vertical direction, and are not formed in the lower portion. Further, in the gas nozzle 840d, a plurality of pinhole-shaped injection holes 834d are formed in the lower portion of the gas nozzle 840d in the vertical direction side by side in the vertical direction, and are not formed in the upper portion.
- the injection hole 834b formed in the upper portion of the gas nozzle 840b covers the range in which the uppermost wafer 200 is arranged in the vertical direction.
- the injection hole 834d formed in the lower portion of the gas nozzle 840d covers the range in which the lowermost wafer 200 is arranged in the vertical direction. Further, the injection holes 834b and 834d are formed so as to face the supply slits 235a and 235c, respectively.
- gas nozzles 340a and 840b for supplying N 2 gas and gas nozzles 840d and 340e are provided symmetrically around the gas nozzle 340c for supplying Hf gas.
- the substrate processing apparatus 810 it is possible to control the film thickness distribution of the HfO film formed on the wafer 200 by using the film formation sequences shown in FIGS. 6 and 7 described above. Further, according to the substrate processing apparatus 810, it is possible to independently control the film thickness of the film formed on the wafer 200 in the upper region and the lower region of the wafer 200 supported by the boat 217. It becomes.
- the present invention is not limited to this, and even one gas nozzle for supplying the inert gas has the same effect.
- controllability can be improved.
- the configuration in which the U-shaped (U-shaped) gas nozzle is used as the gas nozzle 340c has been described, but the present invention is not limited to this, and the case where the I-shaped gas nozzle is used is also the same as in the present disclosure. It can be applied and the same effect can be obtained.
- the configuration in which the gas nozzle 340c is provided with the slit-shaped injection holes 234c-1 and 234c-2 has been described, but the present invention is not limited to this, and the present disclosure also includes the case where a plurality of pinhole-shaped injection holes are provided in the vertical direction. It can be applied in the same way as, and the same effect can be obtained.
- the first processing step, the first purging step, the first discharging step, the second treating step, the second purging step, and the second discharging step have been repeated.
- the Hf gas supply step, the purge step and the discharge step as the first treatment step are repeated, and then the O 3 gas supply step, the purge step and the discharge step as the second treatment step are repeated.
- the purging step and the discharging step are repeated, the same application as in the present disclosure can be applied, and the same effect can be obtained.
- the present invention is not limited to this, and aluminum oxide (AlO) film, zirconium oxide (ZrO) film, silicon oxide (SiO) film, and the like. It can also be applied to supply a raw material gas in other film formations such as a silicon nitride (SiN) film, a titanium nitride (TiN) film, a tungsten (W) film, a molybdenum (Mo) film, and a molybdenum nitride (MoN) film. It can also be applied when forming a laminated film containing at least two or more of these materials.
- TMA trimethylaluminum
- TEMAZ tetrakisethylmethylaminozirconium
- HCDS hexachlorodisilane
- TiCl 4 titanium tetrachloride
- TDMAT tungsten hexafluoride
- MoCl 5 molybdenum pentachloride
- MoO 2 Cl 2 molybdenum oxychloride
- Example> A wafer having a diameter of 300 mm by changing the flow rate ratio of the N 2 gas supplied from each gas nozzle in the first processing step by using the film thickness sequence (condition for strengthening the convex distribution) in the substrate processing apparatus 10 and FIG. 6 described above. The film thickness of the HfO film formed on the film was measured.
- FIG. 11A is a diagram schematically showing the gas flow in the processing chamber in the first processing step of the film forming sequence of FIG.
- FIG. 11B is a diagram showing the film thickness distribution of the film formed on the wafer by the film formation sequence of FIG.
- the flow rate of Hf gas supplied to the nozzle 340c is 0.12 slm
- the flow rate of N 2 gas is 26.5 slm
- the flow rate of N 2 gas supplied to the nozzles 340a and 340e is 1 slm
- the nozzles 340b and 340d The flow rate of the N 2 gas supplied to the wafer was changed to 4.5 to 11 slm, and the thickness of the HfO film formed on the wafer was measured.
- the thickness of the HfO film formed on the wafer when the N 2 gas was supplied at a symmetrical flow rate centered on the Hf gas was compared by changing the flow rate ratio of the N 2 gas supplied from each gas nozzle. ..
- the flow rate of N 2 gas supplied to the N 2 gas flow rate / nozzle 340a supplies the flow rate of the nozzle 340b of the N 2 gas supplied to the flow rate / nozzle 340e of N 2 gas supplied to the nozzle 340 d, the flow rate ratio of 4.
- the film thickness of the HfO film formed on the wafer was changed to 5, 8 and 11 and compared.
- the HfO film was formed in a convex shape on the wafer. Further, in the case of the flow rate ratios 8 and 11, the convexity was stronger and the film was formed on the wafer than in the case of the flow rate ratio of 4.5. Further, the film thickness at the end of the wafer was formed thinner at the flow rate ratio 11 than at the flow rate ratios 4.5 and 8. That is, the flow rate of the N 2 gas supplied from both sides of the Hf gas is symmetrical and compared with the flow rate of the N 2 gas supplied from the gas nozzle far from the Hf gas supply side, from the gas nozzle closer to the Hf gas supply side.
- an HfO film with strong convexity was formed on the wafer. That is, by increasing the flow rate of the N 2 gas on both sides of the Hf gas, the flow rate of the Hf gas to the center of the wafer could be increased and the convex distribution could be strengthened.
- the HfO film could be formed convexly on the wafer by setting the flow rate of the N 2 gas to be supplied to the wafer.
- the flow ratio of the N 2 gas supplied from each gas nozzle in the first processing step is changed to change the diameter.
- the film thickness of the HfO film formed on the 300 mm wafer was measured.
- FIG. 12A is a diagram schematically showing the gas flow in the processing chamber in the first processing step of the film forming sequence of FIG. 7.
- FIG. 12B is a diagram showing the film thickness distribution of the film formed on the wafer by the film formation sequence of FIG. 7.
- the flow rate of the Hf gas supplied to the nozzle 340c 0.12slm, 26.5slm the flow rate of N 2 gas, a nozzle 340a, the flow rate of N 2 gas supplied to 340b and 1 slm, the nozzle 340 d, to 340e
- the flow rate of the supplied N 2 gas was changed to 12 to 19 slm, and the thickness of the HfO film formed on the wafer was measured.
- the convexity was weaker and the HfO film was formed on the wafer in the cases of the flow rate ratios 12, 15 and 19 than in the case of the flow rate ratio of 4.5. Further, as compared with the case of the flow rate ratio of 12, the convexity of the central portion of the wafer was weaker (concave) in the cases of the flow rate ratios of 15 and 19, and the HfO film was formed. That is, the N 2 gas flow rate supplied from one side of Hf gas, the larger the ratio between the flow rate of N 2 gas supplied from the other side increases, convex weakly on the wafer (concave) HfO film formation was done.
- Substrate processing device 12 Inner tube 200 wafers (example of substrate) 201 Processing chamber 217 Boat (an example of substrate holder) 280 Control unit 310a-310g Gas supply pipe 320a-320g MFC (Example of flow rate controller) 340a-340e gas nozzle
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Abstract
Description
処理ガスを処理室内に供給する処理ガスノズルと、
前記処理ガスノズルを中心に周方向に挟むようにそれぞれ2つ以上設けられた、不活性ガスを前記処理室内に供給する不活性ガスノズルと、
前記処理ガスノズルに処理ガスを供給する処理ガス供給部と、
前記不活性ガスノズルのそれぞれに不活性ガスを供給する不活性ガス供給部と、
前記処理ガス供給部から前記処理ガスノズルに供給される処理ガスの流量と、前記不活性ガス供給部から前記不活性ガスノズルのそれぞれに供給されるそれぞれの不活性ガスの流量と、をそれぞれ制御することが可能なよう構成される制御部と、
を有する技術が提供される。
本開示の実施形態に係る基板処理装置の一例について図1~図7に従って説明する。なお、図中に示す矢印Hは装置上下方向(鉛直方向)を示し、矢印Wは装置幅方向(水平方向)を示し、矢印Dは装置奥行方向(水平方向)を示す。
基板処理装置10は、図1に示されるように、各部を制御する制御部280及び処理炉202を備え、処理炉202は、加熱手段であるヒータ207を有する。ヒータ207は円筒形状であり、図示しないヒータベースに支持されることにより装置上下方向に据え付けられている。ヒータ207は、処理ガスを熱で活性化させる活性化機構としても機能する。なお、制御部280については、詳細を後述する。
次に、内管12、ノズル室222、ガス供給管310a~310e、ガスノズル340a~340e、及び制御部280について説明する。
内管12の周壁には、図2、図4に示されるように、供給孔の一例である供給スリット235a,235b,235cと、供給スリット235a,235b,235cと対向するように、排出部の一例である第一排気口236が形成されている。また、内管12の周壁において第一排気口236の下方には、図1に示されるように、第一排気口236より開口面積が小さい排出部の一例である第二排気口237が形成されている。このように、供給スリット235a,235b,235cと、第一排気口236、第二排気口237とは、内管12の周方向において異なる位置に形成されている。
ノズル室222は、図2に示されるように、内管12の外周面12cと外管14の内周面14aとの間の間隙Sに形成されている。ノズル室222は、上下方向に延びている第一ノズル室222aと、上下方向に延びている第二ノズル室222bと、上下方向に延びている第三ノズル室222cとを備えている。また、第一ノズル室222aと、第二ノズル室222bと、第三ノズル室222cとは、この順番で処理室201の周方向に並んで形成されている。
ガスノズル340a~340eは、上下方向に延びており、図2及び図3に示したように、各ノズル室222a~222cに夫々設置されている。ガスノズル340b,340cは、それぞれ処理ガスである原料ガスまたは反応ガスを処理室201内に供給する処理ガスノズルとして用いられる。また、ガスノズル340a~340eは、それぞれ不活性ガスを処理室201内に供給する不活性ガスノズルとして用いられる。また、ガス供給管310aに連通するガスノズル340a、ガス供給管310bに連通するガスノズル340bは、第一ノズル室222aに配置されている。また、ガス供給管310cに連通するガスノズル340cは、第二ノズル室222bに配置されている。また、ガス供給管310dに連通するガスノズル340d、ガス供給管310eに連通するガスノズル340eは、第三ノズル室222cに配置されている。
ガス供給管310aは、図1,図3に示されるように、ノズル支持部350aを介してガスノズル340aと連通しており、ガス供給管310bは、ノズル支持部350bを介してガスノズル340bと連通している。また、ガス供給管310cは、ノズル支持部350cを介してガスノズル340cと連通しており、ガス供給管310dは、ノズル支持部350dを介してガスノズル340dと連通している。さらに、ガス供給管310eは、ノズル支持部350eを介してガスノズル340eと連通している。
図5は、基板処理装置10の制御構成を示すブロック図であり、基板処理装置10の制御部280(所謂コントローラ)は、コンピュータとして構成されている。このコンピュータは、CPU(Central Processing Unit)121a、RAM(Random Access Memory)121b、記憶装置121c、及びI/Oポート121dを備えている。
次に、本開示の一実施形態における基板処理装置の動作概要を、制御部280が行う制御手順に従って図6及び図7に示す成膜シーケンスを用いて説明する。図6には、ウェハ200上に凸を強める条件で膜を形成する場合の成膜シーケンスの一例が示されている。図7には、ウェハ200上に凸を弱める条件で膜を形成する場合の成膜シーケンスの一例が示されている。なお、反応管203には、予め所定枚数のウェハ200が載置されたボート217が搬入されており、シールキャップ219によって反応管203が気密に閉塞されている。
以下、ウェハ200上に凸を強める条件で膜を形成する場合の成膜シーケンスの一例について図6を用いて説明する。なお、成膜シーケンスが実行される前の状態では、バルブ330a~330gは、閉じられている。
制御部280による各部の制御によって、排気口230から反応管203の内部の雰囲気が排気されると、制御部280は、バルブ330c,330gを開作動して、ガスノズル340cの噴射孔234c-1,234c-2から第2原料ガスとしてのHfガスとキャリアガスとしてのN2ガスを噴射させる。つまり、制御部280は、第二ノズル室222bに配置されているガスノズル340cの噴射孔234c-1,234c-2からHfガスとN2ガスを噴出させる。
ガスノズル340eから供給されるN2ガス供給流量:1slm
ガスノズル340dから供給されるN2ガス供給流量:4.5slm
ガスノズル340cから供給されるHfガス供給流量:0.12slm、N2ガス供給流量:26.5slm
ガスノズル340bから供給されるN2ガス供給流量:4.5slm
ガスノズル340aから供給されるN2ガス供給流量:1slm
処理圧力:1~1000Pa、好ましくは1~300Pa、より好ましくは100~250Pa
処理温度:室温~600℃、好ましくは90~550℃、より好ましくは450~550℃、さらに好ましくは、200~300℃
が例示される。なお、処理温度は、原料ガスが分解する温度よりも低い温度に設定することが好ましい。
所定時間が経過して第1の処理工程が完了すると、制御部280は、バルブ330cを閉作動して、ガスノズル340cからのHfガスの供給を停止する。また、制御部280は、MFC320f,320gにより、N2ガスの供給流量をそれぞれ第1の処理工程時よりも多くして、ガスノズル340a~340eからパージガスとしてのN2ガスを処理室201へ供給し、反応管203の内部に滞留しているガスを排気口230からパージアウトする。
ガスノズル340eから供給されるN2ガス供給流量:1slm
ガスノズル340dから供給されるN2ガス供給流量:4.5slm
ガスノズル340cから供給されるN2ガス供給流量:10slm
ガスノズル340bから供給されるN2ガス供給流量:5slm
ガスノズル340aから供給されるN2ガス供給流量:1slm
が例示される。
所定時間経過して第1のパージ工程が完了すると、制御部280は、バルブ330a~330gを閉作動して、ガスノズル340a~340eからのN2ガスの供給を停止する。
所定時間経過して第1の排出工程が完了すると、制御部280は、バルブ330b,330fを開作動して、ガスノズル340bの噴射孔234bから第1原料ガスとしてのO3ガスとキャリアガスとしてのN2ガスを噴射させる。つまり、制御部280は、第一ノズル室222aに配置されているガスノズル340bの噴射孔234bからO3ガスとN2ガスを噴出させる。
ガスノズル340eから供給されるN2ガス供給流量:1slm
ガスノズル340dから供給されるN2ガス供給流量:4.5slm
ガスノズル340cから供給されるN2ガス供給流量:4.5slm
ガスノズル340bから供給されるO3ガス供給流量:22slm、N2ガス供給流量:1.5slm
ガスノズル340aから供給されるN2ガス供給流量:1slm
が例示される。
所定時間が経過して第2の処理工程が完了すると、制御部280は、バルブ330bを閉作動して、ガスノズル340bからのO3ガスの供給を停止する。また、制御部280は、MFC320fによりN2ガスの供給流量を多くして、ガスノズル340a~340eからパージガスとしてのN2ガスを処理室201へ供給し、反応管203の内部に滞留しているガスを排気口230からパージアウトする。
ガスノズル340eから供給されるN2ガス供給流量:1slm
ガスノズル340dから供給されるN2ガス供給流量:4.5slm
ガスノズル340cから供給されるN2ガス供給流量:4.5slm
ガスノズル340bから供給されるN2ガス供給流量:10slm
ガスノズル340aから供給されるN2ガス供給流量:1slm
が例示される。
所定時間経過して第2のパージ工程が完了すると、制御部280は、バルブ330a~330gを閉作動して、ガスノズル340a~340eからのN2ガスの供給を停止する。
以下、ウェハ200上に凸を弱める条件で膜を形成する場合の成膜シーケンスの一例について図7を用いて説明する。本シーケンス例は、上述した成膜シーケンスと第1の処理工程のみ異なり、異なる第1の処理工程のみ説明する。
制御部280による各部の制御によって、排気口230から反応管203の内部の雰囲気が排気されると、制御部280は、バルブ330c,330gを開作動して、ガスノズル340cの噴射孔234c-1,234c-2から第2原料ガスとしてのHfガスとキャリアガスとしてのN2ガスを噴射させる。つまり、制御部280は、第二ノズル室222bに配置されているガスノズル340cの噴射孔234c-1,234c-2からHfガスとN2ガスを噴出させる。
ガスノズル340eから供給されるN2ガス供給流量:12~19slm
ガスノズル340dから供給されるN2ガス供給流量:12~19slm
ガスノズル340cから供給されるHfガス供給流量:0.12slm、N2ガス供給流量:14~26.5slm
ガスノズル340bから供給されるN2ガス供給流量:1slm
ガスノズル340aから供給されるN2ガス供給流量:1slm
処理圧力:1~1000Pa、好ましくは1~300Pa、より好ましくは100~250Pa
処理温度:室温~600℃、好ましくは90~550℃、より好ましくは450~550℃、さらに好ましくは、200~300℃
が例示される。なお、処理温度は、原料ガスが分解する温度よりも低い温度に設定することが好ましい。
以上説明したように、基板処理装置10では、第2原料ガスとしてのHfガスが流れるガスノズル340cの両側に、不活性ガスとしてのN2ガスを供給するガスノズル340a,340bと、ガスノズル340d,340eが配置されている。さらに、ガスノズル340a,340b,340d,340eと、これらのガスノズルにN2ガスを供給する不活性ガス供給源360a,360d,360e,360fとの間には、夫々MFC320a,320d,320e,320fが設けられ、それぞれ独立に制御されている。また、ガスノズル340cとHfガスを供給する第2原料ガス供給源360cとの間、ガスノズル340cとN2ガスを供給する不活性ガス供給源360gの間には、それぞれMFC320c,320gが設けられている。
以下いくつかの変形例を説明する。なお、変形例については、最初に説明した実施形態と異なる部分を主に説明する。
変形例に係る基板処理装置610の一例を図8に従って説明する。基板処理装置610は、上述した実施形態の第二ノズル室222bに対応するノズル室622bを備え、上述した実施形態の第一ノズル室222aと第三ノズル室222cとを備えていない。ノズル室622bには、上述した実施形態のガスノズル340cに対応するガスノズル640cが設けられている。また、上述した実施形態のガスノズル340aに対応するガスノズル640aと、ガスノズル340bに対応するガスノズル640bが、ガスノズル640cの周方向右側に近接して処理室201内の内周面12aとウェハ200の間の空間に設けられている。また、上述した実施形態のガスノズル340dに対応するガスノズル640dと、ガスノズル340eに対応するガスノズル640eが、ガスノズル640cの周方向左側に近接して、処理室201内の内周面12aとウェハ200の間の空間に設けられている。
次に、変形例に係る基板処理装置710の一例を図9に従って説明する。
次に、変形例に係る基板処理装置810の一例を図10に従って説明する。
以上、本開示の実施形態を具体的に説明した。但し、本開示は上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。
上述した基板処理装置10及び図6における成膜シーケンス(凸分布を強める条件)を用いて、第1の処理工程における各ガスノズルから供給されるN2ガスの流量比を変化させて直径300mmのウェハ上に形成されたHfO膜の膜厚を測定した。
12 内管
200 ウェハ(基板の一例)
201 処理室
217 ボート(基板保持具の一例)
280 制御部
310a~310g ガス供給管
320a~320g MFC(流量制御器の一例)
340a~340e ガスノズル
Claims (14)
- 処理ガスを処理室内に供給する処理ガスノズルと、
前記処理ガスノズルを中心に周方向に挟むようにそれぞれ2つ以上設けられた、不活性ガスを前記処理室内に供給する不活性ガスノズルと、
前記処理ガスノズルに処理ガスを供給する処理ガス供給部と、
前記不活性ガスノズルのそれぞれに不活性ガスを供給する不活性ガス供給部と、
前記処理ガス供給部から前記処理ガスノズルに供給される処理ガスの流量と、前記不活性ガス供給部から前記不活性ガスノズルのそれぞれに供給されるそれぞれの不活性ガスの流量と、をそれぞれ制御することが可能なよう構成される制御部と、
を有する基板処理装置。 - 前記制御部は、前記不活性ガスノズルに供給する不活性ガスの流量が、前記処理ガスノズルを中心に対称又は非対称となるように制御することが可能なよう構成される請求項1記載の基板処理装置。
- 前記制御部は、前記処理ガスノズルの両側に設けられる前記不活性ガスノズルに供給する不活性ガスの流量が左右等しくなるように制御することが可能なよう構成される請求項2に記載の基板処理装置。
- 前記制御部は、前記不活性ガスノズルの内、前記処理ガスノズルに近接する前記不活性ガスノズルに供給する不活性ガスの流量と、前記処理ガスノズルから遠い前記不活性ガスノズルに供給する不活性ガスの流量と、を異ならせることが可能なよう構成される請求項1に記載の基板処理装置。
- 前記制御部は、前記処理ガスノズルに近接する前記不活性ガスノズルに供給する不活性ガスの流量を、前記処理ガスノズルから遠い前記不活性ガスノズルに供給する不活性ガスの流量よりも多くすることが可能なよう構成される請求項4に記載の基板処理装置。
- 前記制御部は、前記処理ガスノズルに近接する前記不活性ガスノズルに供給する不活性ガスの流量を、前記処理ガスノズルから遠い前記不活性ガスノズルに供給する不活性ガスの流量よりも少なくすることが可能なよう構成される請求項4に記載の基板処理装置。
- 前記制御部は、前記処理ガスノズルに近接する前記不活性ガスノズルに供給する不活性ガスの流量と、前記処理ガスノズルから遠い前記不活性ガスノズルに供給する流量との比を4.5以上であって前記処理ガスノズルに供給するN2ガスの流量を超えない範囲とすることが可能なよう構成される請求項4に記載の基板処理装置。
- 前記処理ガスノズルと、前記不活性ガスノズルは、それぞれ区画された空間に配置される請求項1に記載の基板処理装置。
- 前記処理ガスノズルに、処理ガスと不活性ガスを供給する請求項1に記載の基板処理装置。
- 前記制御部は、前記処理ガスノズルに供給する処理ガスの流量が、前記処理ガスノズルに供給する不活性ガスの流量よりも少なくなるよう制御することが可能なよう構成される請求項9に記載の基板処理装置。
- 前記制御部は、前記処理ガスノズルに供給する不活性ガスの流量が、前記不活性ガスノズルに供給する不活性ガスの流量よりも多くなるよう制御することが可能なよう構成される請求項10に記載の基板処理装置。
- 処理ガス供給部から供給された処理ガスを処理ガスノズルから処理室内に供給する工程と、
不活性ガス供給部から供給された不活性ガスを、前記処理ガスノズルを中心に周方向に挟むようにそれぞれ2つ以上設けられた不活性ガスノズルのそれぞれから前記処理室内に供給する工程と、
前記処理ガス供給部から前記処理ガスノズルに供給される処理ガスの流量と、前記不活性ガス供給部から前記不活性ガスノズルのそれぞれに供給されるそれぞれの不活性ガスの流量と、をそれぞれ制御する工程と、
を有する半導体装置の製造方法。 - 処理ガス供給部から供給された処理ガスを処理ガスノズルから基板処理装置の処理室内に供給する手順と、
不活性ガス供給部から供給された不活性ガスを、前記処理ガスノズルを中心に周方向に挟むようにそれぞれ2つ以上設けられた不活性ガスノズルのそれぞれから前記処理室内に供給する手順と、
前記処理ガス供給部から前記処理ガスノズルに供給される処理ガスの流量と、前記不活性ガス供給部から前記不活性ガスノズルのそれぞれに供給されるそれぞれの不活性ガスの流量と、をそれぞれ制御する手順と、
をコンピュータによって前記基板処理装置に実行させるプログラム。 - 基板に対して処理ガスノズルから処理ガスを供給する処理ガス供給系と、
基板に対して前記処理ガスノズルを中心に周方向に挟むようにそれぞれ2つ以上設けられた不活性ガスノズルのそれぞれから不活性ガスを供給する不活性ガス供給系と、
基板に対して前記処理ガス供給系により前記処理ガスノズルに供給する前記処理ガスの流量と、前記基板に対して前記不活性ガス供給系により前記不活性ガスノズルのそれぞれに供給するそれぞれの前記不活性ガスの流量と、をそれぞれ制御して前記基板上に膜を形成するガス供給システム。
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JP2018195727A (ja) * | 2017-05-18 | 2018-12-06 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
JP2019062053A (ja) * | 2017-09-26 | 2019-04-18 | 株式会社Kokusai Electric | 基板処理装置、反応管、半導体装置の製造方法、及びプログラム |
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JP6084298B2 (ja) | 2013-09-30 | 2017-02-22 | 株式会社日立国際電気 | 基板処理装置、基板処理方法および半導体装置の製造方法 |
WO2016157401A1 (ja) | 2015-03-31 | 2016-10-06 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
JP6834774B2 (ja) * | 2017-05-22 | 2021-02-24 | トヨタ自動車株式会社 | 情報抽出装置 |
KR101910085B1 (ko) * | 2017-06-08 | 2018-10-22 | 주식회사 유진테크 | 기판처리장치 |
-
2020
- 2020-07-01 WO PCT/JP2020/025776 patent/WO2021020008A1/ja active Application Filing
- 2020-07-01 KR KR1020217042815A patent/KR20220012942A/ko not_active Application Discontinuation
- 2020-07-01 CN CN202080047667.0A patent/CN114026267A/zh active Pending
- 2020-07-03 TW TW109122489A patent/TWI757777B/zh active
-
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- 2021-12-28 US US17/563,566 patent/US20220119949A1/en not_active Abandoned
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JP2019062053A (ja) * | 2017-09-26 | 2019-04-18 | 株式会社Kokusai Electric | 基板処理装置、反応管、半導体装置の製造方法、及びプログラム |
Also Published As
Publication number | Publication date |
---|---|
CN114026267A (zh) | 2022-02-08 |
JPWO2021020008A1 (ja) | 2021-02-04 |
TW202111785A (zh) | 2021-03-16 |
US20220119949A1 (en) | 2022-04-21 |
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KR20220012942A (ko) | 2022-02-04 |
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