WO2021012695A1 - 阵列基板、显示面板以及显示装置 - Google Patents

阵列基板、显示面板以及显示装置 Download PDF

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Publication number
WO2021012695A1
WO2021012695A1 PCT/CN2020/080822 CN2020080822W WO2021012695A1 WO 2021012695 A1 WO2021012695 A1 WO 2021012695A1 CN 2020080822 W CN2020080822 W CN 2020080822W WO 2021012695 A1 WO2021012695 A1 WO 2021012695A1
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Prior art keywords
display area
electrode
thickness
area
transition
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PCT/CN2020/080822
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English (en)
French (fr)
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WO2021012695A8 (zh
Inventor
刘明星
彭兆基
甘帅燕
张志远
李伟丽
Original Assignee
昆山国显光电有限公司
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Publication of WO2021012695A1 publication Critical patent/WO2021012695A1/zh
Priority to US17/464,701 priority Critical patent/US20210399255A1/en
Publication of WO2021012695A8 publication Critical patent/WO2021012695A8/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/868—Arrangements for polarized light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • This application relates to the field of display technology, and in particular to an array substrate, a display panel and a display device.
  • the opening part needs to be shielded before evaporation.
  • the mask used for evaporation needs to be provided with a shielding part that covers the opening part, and usually the opening part is not set close to the edge of the display screen, which is usually a certain distance from the edge of the display screen. Therefore, the shielding part is connected to the frame of the mask through the cantilever (support bar).
  • the existence of the cantilever causes the shielding of the normal display area during the evaporation process, so that the evaporation material cannot be formed in the cantilever shielding Area, forming black lines, affecting the normal display effect of the display.
  • the technical problem to be solved by the present application is to overcome the defect that the functional area and the cantilever coverage area of the mask cannot be displayed normally, thereby providing an array substrate, a display panel and a display device that can achieve full display.
  • An array substrate includes a main display area and at least one auxiliary display area, the main display area being adjacent to the auxiliary display area;
  • the transition display area is adjacent to the sub display area and the main display area; the main display area, the sub display area and the transition display area can be used to display static or dynamic Picture; the thickness of the first electrode of the secondary display area is less than the thickness of the first electrode of the transition display area, and the thickness of the first electrode of the transition display area is less than or equal to the first electrode of the main display area thickness of.
  • a display panel which includes:
  • An encapsulation layer which is encapsulated on a side of the array substrate away from the substrate;
  • a photosensitive device may be arranged under the auxiliary display area; at least part of the auxiliary display area is surrounded by the main display area;
  • the encapsulation layer includes a polarizer that covers the main display area; or, the polarizer covers the main display area and the auxiliary display area; or, the polarizer covers the main display area , The secondary display area and the transition display area.
  • a display device including:
  • the device body has a device area
  • the display panel is covered on the device body;
  • the device area is located below the auxiliary display area, and the device area includes a photosensitive device that emits or collects light through the auxiliary display area;
  • the photosensitive device includes at least one of the following: a camera, a light sensor, and a light emitter.
  • the array substrate provided by the present application, the array substrate includes a main display area and at least one sub display area, the main display area is adjacent to the sub display area; and also includes a transition display area, the transition display area and the The auxiliary display area is adjacent to the main display area; the main display area, the auxiliary display area, and the transition display area can all be used to display static or dynamic pictures; the thickness of the first electrode of the auxiliary display area The thickness of the first electrode of the transition display area is smaller than that of the transition display area, and the thickness of the first electrode of the transition display area is less than or equal to the thickness of the first electrode of the main display area.
  • the thickness of the first electrode in the auxiliary display area is reduced to increase the transmittance of the auxiliary display area, so that the transmittance of the auxiliary display area is higher than that of the main display area and the transition display area;
  • One electrode can be set thinner so that its thickness meets the basic requirements of display luminescence, which can not only realize the display function of the secondary display area, but also make it have a higher light transmittance when it is not displayed, and it is convenient for the functions below it. Normal use of components.
  • the thickness of the second electrode of the auxiliary display area is less than or equal to the thickness of the second electrode of the main display area, and/or the thickness of the second electrode of the auxiliary display area is less than Or equal to the thickness of the second electrode of the transition display area, and the light transmittance of the auxiliary display area is further improved by reducing the thickness of the second electrode of the auxiliary display area.
  • FIG. 1 is a schematic structural diagram of a display device provided in the first embodiment of this application;
  • Figure 2 is a cross-sectional view of A-A shown in Figure 1;
  • FIG. 3 is a schematic structural diagram of a display device provided in a second embodiment of this application.
  • FIG. 4 is a schematic structural diagram of a display device provided in a third embodiment of this application.
  • FIG. 5 is a schematic structural diagram of a display device provided in a fourth embodiment of this application.
  • FIG. 6 is a schematic structural diagram of a display device provided in a fifth embodiment of this application.
  • FIG. 7 is a schematic structural view of a mask plate forming the cathode layer in FIG. 6;
  • FIG. 8 is a schematic structural diagram of another mask for forming the cathode layer in FIG. 6.
  • This application describes a display device, which includes a device body and a display panel, wherein the device body has a device area, and the display panel covers the device body.
  • the display panel includes an array substrate and a packaging layer, and the packaging layer is packaged on a side of the array substrate away from the substrate.
  • the array substrate includes a main display area 1, at least one sub display area 2 and a transition display area 3.
  • the main display area 1 is adjacent to the sub display area 2; the transition display area 3 is connected to the sub display area 2 and the main display area 2.
  • the display area 1 is adjacent; the main display area 1, the sub display area 2 and the transition display area 3 can all be used to display static or dynamic pictures; wherein at least part of the sub display area 2 is surrounded by the main display area 1; the transparency of the sub display area 2
  • the light rate is greater than the light transmittance of the transition display area 3 and the main display area 1.
  • the device area is located below the sub-display area 2, and the device area includes a photosensitive device that emits or collects light through the sub-display area 2.
  • the photosensitive device includes at least one of the following: a camera, a light Sensors, light emitters.
  • the encapsulation layer includes a polarizer, which covers the main display area 1; or, the polarizer covers the main display area 1 and the sub display area 2; or, the polarizer covers the main display area 1, the sub display area 2 and the transition display area 3. While ensuring the normal display of the array substrate, it can also realize the normal operation of the photosensitive device disposed under it.
  • the specific coverage position of the polarizer is set according to the requirements of the specific product. This is only an example, and does not constitute the application. Any restrictions.
  • the array substrate also includes a substrate and a pixel circuit arranged on the substrate.
  • the pixel circuit of the auxiliary display area 2 is arranged in the main display area 1 or the transition display area 3 to increase the light transmittance of the auxiliary display area and make
  • the photosensitive device such as a camera, arranged below it works normally.
  • the thickness of the first electrode of the secondary display area 2 is less than the thickness of the first electrode of the transition display area 3, and the thickness of the first electrode of the transition display area 3 is less than or equal to that of the first electrode of the main display area 1. thickness.
  • the first electrode of the main display area 1, the first electrode of the transition display area 3, and the first electrode of the auxiliary display area 2 are connected to form a surface electrode; the first electrode in this embodiment refers to the cathode.
  • the thickness of the first electrode of the auxiliary display area 2 is reduced to increase the light transmittance of the auxiliary display area 2 so that the light transmittance of the auxiliary display area 2 is higher than that of the main display area 1 and the transition display area 3.
  • the thickness of the cathode in the main display area 1 in this embodiment is greater than the thickness of the cathode in the transition display area 3 and the thickness of the cathode in the auxiliary display area 2.
  • the thickness of the first electrode, the cathode layer is gradually increased from the sub-display area to the transition display area and to the main display area, which not only increases the light transmittance of the sub-display area, but also prevents the evaporation mask from wrinkling .
  • the thickness of the second electrode of the sub-display area 2 is less than or equal to the thickness of the second electrode of the main display area 1, and/or the thickness of the second electrode of the sub-display area 2 is less than or equal to the thickness of the second electrode of the transition display area 3.
  • the thickness of the two electrodes thereby further improving the light transmittance of the sub-display area 2.
  • the thickness of the second electrode of the secondary display area 2 is less than the thickness of the second electrode of the transition display area 3, and the thickness of the second electrode of the transition display area 3 is less than the thickness of the second electrode of the main display area 1.
  • the second electrode refers to the anode, and the anode materials of the main display area 1, the sub display area 2 and the transition display area 3 may be the same or different.
  • the anode in this embodiment can be formed by silver evaporation.
  • the thickness of the anode 13 in the sub-display area 2 is smaller than the thickness of the anode 13 in other areas, thereby further improving the light transmittance of the sub-display area 2.
  • At least the second electrode of the secondary display area 2 is a transparent conductive layer, such as an indium tin oxide (ITO) layer; of course, the anode 13 can also be a layer covering the primary display area 1, the secondary display area 2 and the transition display area 3.
  • the transparent conductive layer has a high light transmittance due to the transparent ITO layer.
  • the main display area 1 in this embodiment is a rectangle
  • the sub display area 2 is a circle set in the main display area 1
  • the transition display area 3 is a straight bar
  • the sub display area 2 is displayed by transition Area 3 is connected to the boundary of main display area 1.
  • the secondary display area 2 is not limited to being set as a circle, and it can also be rectangular, elliptical, rhombus, hexagon, etc.
  • the main display area 1 is not limited to being set as a rectangle, and can be a circle, an ellipse, Rhombus, hexagon and other shapes.
  • transition display area 3 can also be set to other shapes, such as the polygon shown in FIG. 3, one side of which is an arc connected to the circular secondary display area 2, and the other two sides are connected to the rectangular main display area 1. The two sides are connected. Or as a single rectangle in FIG. 4 or 5, one end of the rectangular transition display area 3 is connected to the secondary display area 2, and the other end is connected to the edge of the main display area 1.
  • the substrate area corresponding to the sub-display area 2 of the display device of this embodiment is a transparent substrate, and a full-surface transparent glass plate can be used as the substrate 5; of course, it can also be used
  • the non-transparent substrate as shown in FIG. 2, the area corresponding to the auxiliary display area 2 is etched and filled with an auxiliary transparent substrate 51, and the auxiliary transparent substrate 51 is transparent glass or transparent organic glue.
  • the manufacturing process of the display device of this embodiment is:
  • the anodes of the main display area 1 and the transition display area 3 can be vapor-deposited first, and then the anodes of the sub-display area 2 can be vapor-deposited; when the anode materials are the same, the whole surface can be performed first
  • the thickness of the vapor-deposited anode material is the same as that of the anode in the sub-display area 2, and then the anode material is continuously vapor-deposited in the main display area 1 and the transition display area 3 to increase the thickness;
  • the entire surface of the first cathode layer 41 is vapor-deposited to make the thickness the same as that of the cathode in the sub-display area 2, and then different common metal masks (CMM) are used to separate the second cathode in the main display area 1.
  • CCM common metal masks
  • the substrate 5 is a non-transparent substrate, use laser or etching to remove the part of the substrate 5 corresponding to the sub-display area 2 and replace it with a transparent glass substrate or a transparent organic glue.
  • an external drive circuit can be used to perform external optical compensation for the transition zone display module, such as optically extractable Demura optical compensation to improve the uniformity of the overall brightness of the display device and avoid residual images.
  • a display device which includes a device body and a display panel.
  • the display panel includes an array substrate and an encapsulation layer.
  • the encapsulation layer is encapsulated on a side of the array substrate away from the substrate of the array substrate.
  • the structure of the display device in this embodiment is the same as that in the foregoing embodiment, and the structure of the display panel is also the same as that in the foregoing embodiment.
  • the difference between the display device in this embodiment and the foregoing embodiment is that the structure of the transition display area 3 of the display panel is different from that in the foregoing embodiment.
  • the first electrode of the transition display area includes a first area and a second area, wherein the thickness of the first area is greater than the thickness of the second area, and the first area is covered with the pixel unit.
  • the thickness of the first area is equal to the thickness of the first electrode of the main display area; and/or the thickness of the second area is equal to the thickness of the first electrode of the sub-display area.
  • the first electrode refers to the cathode.
  • the cathode of the transition display area 3 includes a first cathode area 45 and a second cathode area 46, wherein the thickness of the first cathode area 45 is greater than the thickness of the second cathode area 46 ,
  • the first cathode region 45 is covered with a pixel unit, the pixel unit includes red (R), green (G) and blue (B) sub-pixels. Of course, it can also include other color sub-pixels, such as white (W). This is not limited.
  • the thickness of the first cathode region 45 is equal to the thickness of the cathode of the main display region 1.
  • the thickness of the second cathode region 46 is equal to the thickness of the cathode of the sub-display region 2.
  • the anodes of the main display area 1 and the transition display area 3 can be vapor-deposited first, and then the anodes of the sub-display area 2 can be vapor-deposited; when the anode materials are the same, the whole surface can be performed first
  • the thickness of the vapor-deposited anode material is the same as that of the anode in the sub-display area 2, and then the anode material is continuously vapor-deposited in the main display area 1 and the transition display area 3 to increase the thickness;
  • the first cathode layer 41 is vapor-deposited on the entire surface to make the thickness the same as that of the cathode of the sub-display area 2, and then a fine metal mask (Fine Metal Mask, referred to as FMM) is used to simultaneously evaporate the main display area 1 and the transition area.
  • FMM Fine Metal Mask
  • the fourth cathode layer 44 is evaporated in the display area 3;
  • the substrate 5 is a non-transparent substrate, use laser or etching to remove the part of the substrate 5 corresponding to the sub-display area 2 and replace it with a transparent glass substrate or a transparent organic glue.
  • the main display area 1 and the transition display area 3 in this embodiment can be simultaneously formed by vapor deposition through a precision metal mask (FMM).
  • FMM precision metal mask
  • the FMM mask assembly of this embodiment is shown in Figures 7-8, which includes: a mask frame 8 and a number of island shielding portions 9, the mask frame 8 is supported on the surface of the substrate, and the mask frame 8 is formed with an opening 11 and A graphic area 10 corresponding to the pixel unit; a number of island shielding portions 9 are located in the opening 10 and connected to the peripheral graphic area 10; wherein the mask frame 8 is a rectangular frame, and the island shielding portion 9 includes circular shielding and/or square shielding.
  • the isolated island shielding part is not limited to being set to be rectangular or circular, it can also be in the shape of an ellipse, rhombus, hexagon, etc.;
  • the mask frame is not limited to being set as a box, and can be a round frame, an oval frame, Shapes such as diamond frame and hexagon frame.
  • the graphic area 10 includes a plurality of shielding sub-regions 12, the shielding sub-regions 12 are arranged in straight strips at intervals, and one or both ends of the shielding sub-regions 12 are connected to the mask frame 8 respectively. , Wherein the isolated island shielding portion 9 is connected to the edge of any one or more shielding sub-regions 12.
  • the shielding sub-region 12 is arranged in a rectangular grid shape, and the island shielding portion 9 is connected to the edge of the shielding sub-region 12.
  • the cathodes of the transition display area 3 and the main display area 1 can be formed at the same time through one evaporation, avoiding the two mask plates to make the transition display in two steps.
  • an external drive circuit can be used to perform external optical compensation on the transition area display module, such as optically extractable Demura optical compensation to improve the uniformity of the overall brightness of the display device and avoid residual images.
  • the application discloses an array substrate, a display panel including the array substrate, and a display device including the display panel.
  • the light transmittance of the sub display area is increased, so that the sub display area can realize normal display.
  • Static or dynamic picture and at the same time, a photosensitive device is set under the sub-display area to realize the photosensitive function, that is, to realize a truly comprehensive display.

Abstract

提供一种阵列基板、显示面板以及显示装置，其中所述阵列基板包括主显示区和至少一个副显示区，所述主显示区与所述副显示区邻接；还包括过渡显示区，所述过渡显示区与所述副显示区和所述主显示区邻接；所述主显示区、所述副显示区和所述过渡显示区均能用于显示静态或动态画面；所述副显示区的第一电极的厚度小于所述过渡显示区的第一电极的厚度，且所述过渡显示区的第一电极的厚度小于或等于所述主显示区的第一电极的厚度。由此既可以实现副显示区的显示功能又可以使其在不显示时具有较高的透光率，便于位于其下方的功能元件的正常使用。

Description

阵列基板、显示面板以及显示装置 技术领域
本申请涉及显示技术领域，具体涉及一种阵列基板、显示面板以及显示装置。
背景技术
随着显示终端的快速发展，用户对屏幕占比的要求越来越高，由于屏幕上方需要安装摄像头、传感器、听筒等元件，因此屏幕上方通常会预留一部分区域用于安装上述元件，影响了屏幕的整体一致性。
同时在蒸镀前需要对开口部分进行遮挡，蒸镀用的掩膜中需要设置包括遮挡开口部分的遮挡部，而通常开口部分并不紧挨着显示屏边缘设置，其通常距离显示屏边缘一定的距离，因此，遮挡部通过悬臂(支撑条)连接至掩模的边框，由于悬臂的存在导致了在蒸镀过程中对正常显示区造成的遮挡，从而使蒸镀材料无法成形在悬臂遮挡的区域，形成黑色线条，影响了显示屏的正常显示效果。
正由于上述功能区和掩膜悬臂覆盖区不能进行正常有效地显示，最终影响了屏幕的整体一致性，不能够实现真正意义上的全面屏。
申请内容
因此，本申请要解决的技术问题在于克服功能区和掩膜悬臂覆盖区不能正常显示的缺陷，从而提供一种能够实现全面显示的一种阵列基板、显示面板以及显示装置。
为此，本申请的技术方案如下：
一种阵列基板，所述阵列基板包括主显示区和至少一个副显示区，所述主 显示区与所述副显示区邻接；
还包括过渡显示区，所述过渡显示区与所述副显示区和所述主显示区邻接；所述主显示区、所述副显示区和所述过渡显示区均能用于显示静态或动态画面；所述副显示区的第一电极的厚度小于所述过渡显示区的第一电极的厚度，且所述过渡显示区的第一电极的厚度小于或等于所述主显示区的第一电极的厚度。
根据本申请的另一个方面，提供一种显示面板，其包括：
上述任一项所述的阵列基板；
封装层，所述封装层封装于所述阵列基板上远离所述衬底的一侧；
所述副显示区下方可设置感光器件；所述副显示区的至少部分被主显示区包围；
所述封装层包括偏光片，所述偏光片覆盖所述主显示区；或者，所述偏光片覆盖所述主显示区和所述副显示区；或者，所述偏光片覆盖所述主显示区、所述副显示区以及所述过渡显示区。
根据本申请的另一个方面，提供一种显示装置，其包括：
设备本体，具有器件区；
上述的显示面板；
所述显示面板覆盖在所述设备本体上；
其中，所述器件区位于所述副显示区的下方，且所述器件区包括透过所述副显示区发射或者采集光线的感光器件；
其中，所述感光器件包括下述至少之一：摄像头、光线感应器、光线发射器。
本申请技术方案，具有如下优点：
1.本申请提供的阵列基板，所述阵列基板包括主显示区和至少一个副显示区，所述主显示区与所述副显示区邻接；还包括过渡显示区，所述过渡显示区与所述副显示区和所述主显示区邻接；所述主显示区、所述副显示区和所述过渡显示区均能用于显示静态或动态画面；所述副显示区的第一电极的厚度小于所述过渡显示区的第一电极的厚度，且所述过渡显示区的第一电极的厚度小于 等于所述主显示区的第一电极的厚度。
本申请中通过降低副显示区的第一电极的厚度以提高副显示区的透光度，使得副显示区的透光度高于主显示区和过渡显示区；通过将副显示区中的第一电极设置较薄使其厚度满足显示发光的基本要求即可，由此既可以实现副显示区的显示功能又可以使其在不显示时具有较高的透光率，便于位于其下方的功能元件的正常使用。
2.本申请提供的显示装置，所述副显示区的第二电极的厚度小于或等于所述主显示区的第二电极的厚度，和/或所述副显示区的第二电极的厚度小于或等于所述过渡显示区的第二电极的厚度，通过减小副显示区的第二电极的厚度以进一步提高副显示区的透光率。
附图说明
图1为本申请的第一种实施方式中提供的显示装置的结构示意图；
图2为图1所示的A-A的剖视图；
图3为本申请的第二种实施方式中提供的显示装置的结构示意图；
图4为本申请的第三种实施方式中提供的显示装置的结构示意图；
图5为本申请的第四种实施方式中提供的显示装置的结构示意图；
图6为本申请的第五种实施方式中提供的显示装置的结构示意图；
图7为形成图6中阴极层的掩模板的结构示意图；
图8为形成图6中阴极层的另一种掩模板的结构示意图。
附图标记说明：
1-主显示区；2-副显示区；3-过渡显示区；41-第一阴极层；42-第二阴极层；43-第三阴极层；44-第四阴极层；45-第一阴极区；46-第二阴极区；5-衬底；51- 辅助玻璃基板；6-阵列基板；7-发光层；8-掩模边框；9-孤岛遮挡部；10-图形区；11-开口；12-遮挡子区；13-阳极。
具体实施方式
此外，下面所描述的本申请不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
实施例1
本申请记载了一种显示装置，其包括设备本体和显示面板，其中设备本体具有器件区，显示面板覆盖在设备本体上。显示面板包括阵列基板和封装层，封装层封装于阵列基板上远离衬底的一侧。
如图1和2所示，阵列基板包括主显示区1、至少一个副显示区2和过渡显示区3，主显示区1与副显示区2邻接；过渡显示区3与副显示区2和主显示区1邻接；主显示区1、副显示区2和过渡显示区3均能用于显示静态或动态画面；其中副显示区2的至少部分被主显示区1包围；副显示区2的透光率大于过渡显示区3和主显示区1的透光率。
其中器件区位于副显示区2的下方，且器件区包括透过副显示区2发射或者采集光线的感光器件；在一可选的实施例中，感光器件包括下述至少之一：摄像头、光线感应器、光线发射器。
封装层包括偏光片，偏光片覆盖主显示区1；或者，偏光片覆盖主显示区1和副显示区2；或者，偏光片覆盖主显示区1、副显示区2以及过渡显示区3。在保证阵列基板正常显示的同时又能够实现设置于其下的感光器件的正常工作，偏光片具体覆盖的位置，根据具体产品的要求进行设置，在此仅是给出示例，并不对本申请形成任何限定。
阵列基板还包括衬底和设置于衬底上的像素电路，其中副显示区2的像素电路设置于主显示区1内或过渡显示区3内，以增大副显示区的透光率，使设置于其下方的感光器件如摄像头等正常工作。
本实施例中的副显示区2的第一电极的厚度小于过渡显示区3的第一电极的厚度，且过渡显示区3的第一电极的厚度小于或等于主显示区1的第一电极的厚度。其中主显示区1的第一电极、过渡显示区3的第一电极以及副显示区2的第一电极连接成面电极；其中本实施例中的第一电极指阴极。
本申请中通过降低副显示区2的第一电极的厚度以提高副显示区2的透光率，使得副显示区2的透光率高于主显示区1和过渡显示区3。由此允许设置于副显示区下方的感光器件在需要使用时能够通过透光率较高的副显示区实现正常使用，而在需要显示时，副显示区又能够实现显示功能。
其中本实施例中主显示区1的阴极的厚度大于过渡显示区3的阴极的厚度大于副显示区2的阴极的厚度。通过第一电极即阴极层的厚度由副显示区到过渡显示区以及到主显示区逐渐增厚的设置，在实现增大副显示区的透光率的同时，还防止蒸镀掩模版发生褶皱。
可选的，副显示区2的第二电极的厚度小于或等于主显示区1的第二电极的厚度，和/或副显示区2的第二电极的厚度小于或等于过渡显示区3的第二电极的厚度；由此进一步提高副显示区2的透光率。
可选的，副显示区2的第二电极的厚度小于过渡显示区3的第二电极的厚度，且过渡显示区3的第二电极的厚度小于主显示区1的第二电极的厚度。其中第二电极指阳极，主显示区1、副显示区2和过渡显示区3的阳极材料可相同或不同。本实施例中的阳极可以采用银蒸镀形成。且副显示区2的阳极13厚度小于其他区域的阳极13厚度，由此进一步提高副显示区2的透光率。
可选的，至少副显示区2的第二电极为透明导电层，例如氧化铟锡(ITO)层；当然，阳极13也可为覆盖主显示区1、副显示区2和过渡显示区3的透明导电层，由于设置有透明ITO层，其本身就具有较高的透光率。
如图1所示，本实施例中的主显示区1为矩形，副显示区2为设于主显示区1内的圆形，过渡显示区3为直条形，副显示区2通过过渡显示区3连接于主显示区1的边界。当然副显示区2也不限于仅设置为圆形，其也可以为矩形、椭圆形、菱形、六边形等形状；主显示区1也不限于设置为矩形，可以为圆形、 椭圆形、菱形、六边形等形状。
当然，过渡显示区3也可设置为其他形状，例如图3中所示的多边形，其一条边为与圆形副显示区2连接的弧形，另外两条边分别与矩形主显示区1的两条边连接。或者如图4或5中的单个矩形，矩形过渡显示区3的一端连接副显示区2，另一端连接主显示区1的边缘。
其中为确保副显示区2的透光性，本实施例的显示装置至少与副显示区2对应的衬底区域为透明基板，其中可采用整面透明玻璃板作为衬底5；当然也可采用非透明基板，如图2所示，将与副显示区2对应的区域刻蚀填充上辅助透明基板51，辅助透明基板51为透明玻璃或者透明有机胶。
如图2所示，本实施例的显示装置的制作过程为：
S1：制作整面衬底5；
S2：制作成型于衬底5上的阵列基板6；
其包括以下步骤：
制作阳极13：当阳极材料不同时，可先分别蒸镀形成主显示区1和过渡显示区3的阳极，再蒸镀形成副显示区2的阳极；当阳极材料相同时，可先进行整面蒸镀阳极材料，其厚度与副显示区2的阳极厚度相同，再分别对主显示区1和过渡显示区3区域继续蒸镀阳极材料，增加其厚度；
制作有机发光层7；
制作阴极，先进行整面蒸镀第一阴极层41，使其厚度与副显示区2的阴极厚度相同，再分别采用不同的通用金属掩模板(CMM)分别对主显示区1的第二阴极层42和过渡显示区3的第三阴极层43进行蒸镀；
S3：若衬底5为非透明基板，则采用激光或者刻蚀去除衬底5上与副显示区2对应的部分将其更换为透明玻璃基板或透明有机胶。
其中由于显示装置的阴极厚度不均，过渡显示区3和副显示区2的阴极厚度相对较薄，为避免对正常显示造成影响，确保过渡显示区和副显示区亮度的均匀性以及正常显示，后期可通过外部的驱动电路对过渡区显示模组进行外部光学补偿，例如光学抽取式Demura光学补偿以提高显示装置整体亮度的均匀性 避免产生残像。
实施例2
本实施例中公开了一种显示装置，其包括设备本体和显示面板，显示面板包括阵列基板和封装层，封装层封装于阵列基板上远离阵列基板的衬底的一侧。
本实施例中的显示装置的结构与上述实施例中相同，显示面板的结构也与上述实施例中相同。本实施例与上述实施例中的显示装置的区别在于，显示面板过渡显示区3的结构与上述实施例中不同。
本实施例中过渡显示区的第一电极包括第一区域和第二区域，其中第一区域的厚度大于第二区域的厚度，第一区域覆盖有像素单元。第一区域的厚度等于主显示区的第一电极的厚度；和/或第二区域的厚度等于副显示区的第一电极厚度。
本实施例中第一电极指阴极，参见附图6，过渡显示区3的阴极包括第一阴极区45和第二阴极区46，其中第一阴极区45的厚度大于第二阴极区46的厚度，第一阴极区45覆盖有像素单元，像素单元包括红色(R)、绿色(G)和蓝色(B)子像素，当然，也可以包括其他颜色的子像素，如白色(W)，在此不做限定。
在一可选的实施例中，第一阴极区45的厚度等于主显示区1的阴极厚度。第二阴极区46的厚度等于副显示区2的阴极厚度。
本实施例的显示装置的制作过程为：
S1：制作整面衬底5；
S2：制作成型于衬底5上的阵列基板6；
其包括以下步骤：
制作阳极13：当阳极材料不同时，可先分别蒸镀形成主显示区1和过渡显示区3的阳极，再蒸镀形成副显示区2的阳极；当阳极材料相同时，可先进行整面蒸镀阳极材料，其厚度与副显示区2的阳极厚度相同，再分别对主显示区1和过渡显示区3区域继续蒸镀阳极材料，增加其厚度；
制作有机发光层7；
制作阴极，先进行整面蒸镀第一阴极层41，使其厚度与副显示区2的阴极厚度相同，再采用精密金属掩模板(Fine Metal Mask，简称FMM)同时对主显示区1和过渡显示区3进行蒸镀第四阴极层44；
S3：若衬底5为非透明基板，则采用激光或者刻蚀去除衬底5上与副显示区2对应的部分将其更换为透明玻璃基板或透明有机胶。
其中本实施例中的主显示区1和过渡显示区3可通过一个精密金属掩模板(FMM)同时蒸镀成型。
本实施例的FMM掩模组件如图7-8所示，其包括：掩模边框8和若干孤岛遮挡部9，掩模边框8支撑于基底表面，掩模边框8内形成有开口11以及与像素单元对应设置的图形区10；若干孤岛遮挡部9位于开口10内且与周边图形区10连接；其中掩模边框8为矩形框，孤岛遮挡部9包括圆形遮挡和/或方形遮挡。当然，孤岛遮挡部不限于仅设置为矩形或者圆形，其也可以为椭圆形、菱形、六边形等形状；掩模边框也不限于设置为方框，可以为圆框、椭圆形框、菱形框、六边形框等形状。
参见附图7，其中图形区10包括若干遮挡子区12，遮挡子区12呈直条状间隔平行设置，其中直条状所述遮挡子区12的一端或者两端分别连接于掩模边框8，其中孤岛遮挡部9连接于任意一个或多个遮挡子区12的边缘。
参见附图8，遮挡子区12呈矩形网格状设置，孤岛遮挡部9连接于遮挡子区12的边缘。
通过设置上述掩模组件对显示装置的阴极层进行蒸镀时可通过一次蒸镀同时形成过渡显示区3和主显示区1的阴极，避免经过两个掩模板分两个步骤分别制作过渡显示区3的阴极和主显示区1的阴极；工艺更加简单。
其中由于显示装置的阴极层厚度不均，过渡显示区3和副显示区2的阴极层厚度相对较薄，为避免对正常显示造成影响，确保过渡显示区和副显示区亮度的均匀性以及正常显示，后期可通过外部的驱动电路对过渡区显示模组进行 外部光学补偿，例如光学抽取式Demura光学补偿以提高显示装置整体亮度的均匀性避免产生残像。
本申请公开了一种阵列基板，包括该阵列基板的显示面板以及包括该显示面板的显示装置。通过显示装置的显示面板的主显示区、过渡显示区以及副显示区的第一电极和第二电极等结构的设计，增大副显示区的透光率，使副显示区既能够实现正常显示静态或动态画面，同时在副显示区下方设置感光器件，实现感光功能，即实现真正的全面显示。

Claims (17)

  1. 一种阵列基板，其中：所述阵列基板包括主显示区和至少一个副显示区，所述主显示区与所述副显示区邻接；
    还包括过渡显示区，所述过渡显示区与所述副显示区和所述主显示区邻接；所述主显示区、所述副显示区和所述过渡显示区均能用于显示静态或动态画面；所述副显示区的第一电极的厚度小于所述过渡显示区的第一电极的厚度，且所述过渡显示区的第一电极的厚度小于或等于所述主显示区的第一电极的厚度。
  2. 根据权利要求1所述的阵列基板，其中：所述过渡显示区的第一电极包括第一区域和第二区域，其中所述第一区域的厚度大于所述第二区域的厚度，所述第一区域覆盖有像素单元。
  3. 根据权利要求2所述的阵列基板，其中：所述第一区域的厚度等于所述主显示区的第一电极的厚度；和/或所述第二区域的厚度等于所述副显示区的第一电极厚度。
  4. 根据权利要求1所述的阵列基板，其中：所述主显示区的第一电极、所述过渡显示区的第一电极以及所述副显示区的第一电极连接成面电极。
  5. 根据权利要求1-4任一项所述的阵列基板，其中：所述副显示区的第二电极的厚度小于或等于所述主显示区的第二电极的厚度，和/或所述副显示区的第二电极的厚度小于或等于所述过渡显示区的第二电极的厚度。
  6. 根据权利要求5所述的阵列基板，其中：所述副显示区的第二电极的厚度小于所述过渡显示区的第二电极的厚度，且所述过渡显示区的第二电极的厚度小于所述主显示区的第二电极的厚度。
  7. 根据权利要求5所述的阵列基板，其中：所述副显示区的透光率大于所述过渡显示区和所述主显示区的透光率，至少所述副显示区的第二电极为透明导电层。
  8. 根据权利要求1-4和6-7任一项所述的阵列基板，其中：所述阵列基板还包括：
    衬底；
    设置于所述衬底上的像素电路；
    所述副显示区的像素电路设置于所述主显示区内或所述过渡显示区内。
  9. 一种显示面板，其中，包括：
    权利要求1至8任一项所述的阵列基板；
    封装层，所述封装层封装于所述阵列基板上远离所述衬底的一侧；
    所述副显示区下方设置感光器件；所述副显示区的至少部分被主显示区包围；
    所述封装层包括偏光片，所述偏光片覆盖所述主显示区；或者，所述偏光片覆盖所述主显示区和所述副显示区；或者，所述偏光片覆盖所述主显示区、所述副显示区以及所述过渡显示区。
  10. 一种显示装置，其中，包括：
    设备本体，具有器件区；
    权利要求9所述的显示面板；
    所述显示面板覆盖在所述设备本体上；
    其中，所述器件区位于所述副显示区的下方，且所述器件区包括透过所述副显示区发射或者采集光线的感光器件；
    其中，所述感光器件包括下述至少之一：摄像头、光线感应器、光线发射器。
  11. 根据权利要求1-4任一项所述的阵列基板，其中：其中所述副显示区的至少部分被所述主显示区包围。
  12. 根据权利要求1-4任一项所述的阵列基板，其中：所述副显示区的透光率大于所述过渡显示区和主显示区的透光率。
  13. 根据权利要求1-4任一项所述的阵列基板，其中：所述第一电极为阴极。
  14. 根据权利要求13所述的阵列基板，其中：所述主显示区的阴极的厚度大于所述过渡显示区的阴极的厚度大于所述副显示区的阴极的厚度。
  15. 根据权利要求1-4任一项所述的阵列基板，其中：所述第二电极为阳 极，所述主显示区、副显示区和过渡显示区的阳极材料可相同或不同。
  16. 根据权利要求15所述的阵列基板，其中：所述阳极为覆盖所述主显示区、副显示区和过渡显示区的透明导电层。
  17. 根据权利要求8所述的阵列基板，其中：至少与所述副显示区对应的衬底区域为透明基板。
PCT/CN2020/080822 2019-07-24 2020-03-24 阵列基板、显示面板以及显示装置 WO2021012695A1 (zh)

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN210167360U (zh) * 2019-07-24 2020-03-20 昆山国显光电有限公司 阵列基板、显示面板以及显示装置
CN111524460B (zh) * 2020-04-26 2021-10-01 武汉华星光电半导体显示技术有限公司 显示面板、掩膜板和显示面板的制作方法
CN111951677A (zh) * 2020-07-01 2020-11-17 昆山国显光电有限公司 一种显示面板及其制作方法、显示装置
CN112103318B (zh) * 2020-09-17 2021-11-12 合肥维信诺科技有限公司 显示面板、显示面板的制备方法及显示装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160203742A1 (en) * 2014-11-14 2016-07-14 Rohinni, Inc. Indicium Illumination
CN107236927A (zh) * 2017-06-16 2017-10-10 京东方科技集团股份有限公司 掩膜板模组、有机电致发光显示面板及其制作方法
CN107946341A (zh) * 2017-11-10 2018-04-20 上海天马微电子有限公司 显示装置和显示装置的制造方法
CN108866476A (zh) * 2018-06-29 2018-11-23 京东方科技集团股份有限公司 掩膜版及其制作方法、蒸镀方法、显示屏
CN109371361A (zh) * 2018-12-15 2019-02-22 武汉华星光电半导体显示技术有限公司 掩膜板组件和显示面板及其制作方法
CN109920931A (zh) * 2019-03-04 2019-06-21 华为技术有限公司 显示终端、掩膜组件、蒸镀系统及其控制方法
CN110018610A (zh) * 2019-04-25 2019-07-16 武汉天马微电子有限公司 掩模板、显示面板、显示面板的制作方法和显示装置
CN210167360U (zh) * 2019-07-24 2020-03-20 昆山国显光电有限公司 阵列基板、显示面板以及显示装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160203742A1 (en) * 2014-11-14 2016-07-14 Rohinni, Inc. Indicium Illumination
CN107236927A (zh) * 2017-06-16 2017-10-10 京东方科技集团股份有限公司 掩膜板模组、有机电致发光显示面板及其制作方法
CN107946341A (zh) * 2017-11-10 2018-04-20 上海天马微电子有限公司 显示装置和显示装置的制造方法
CN108866476A (zh) * 2018-06-29 2018-11-23 京东方科技集团股份有限公司 掩膜版及其制作方法、蒸镀方法、显示屏
CN109371361A (zh) * 2018-12-15 2019-02-22 武汉华星光电半导体显示技术有限公司 掩膜板组件和显示面板及其制作方法
CN109920931A (zh) * 2019-03-04 2019-06-21 华为技术有限公司 显示终端、掩膜组件、蒸镀系统及其控制方法
CN110018610A (zh) * 2019-04-25 2019-07-16 武汉天马微电子有限公司 掩模板、显示面板、显示面板的制作方法和显示装置
CN210167360U (zh) * 2019-07-24 2020-03-20 昆山国显光电有限公司 阵列基板、显示面板以及显示装置

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