WO2021007712A1 - 显示基板及其制备方法、显示装置 - Google Patents

显示基板及其制备方法、显示装置 Download PDF

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Publication number
WO2021007712A1
WO2021007712A1 PCT/CN2019/095805 CN2019095805W WO2021007712A1 WO 2021007712 A1 WO2021007712 A1 WO 2021007712A1 CN 2019095805 W CN2019095805 W CN 2019095805W WO 2021007712 A1 WO2021007712 A1 WO 2021007712A1
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Prior art keywords
pattern
metal
sub
barrier wall
layer
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PCT/CN2019/095805
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English (en)
French (fr)
Inventor
张震
杨玉清
魏悦
张祎杨
邓雷
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/767,663 priority Critical patent/US11527738B2/en
Priority to PCT/CN2019/095805 priority patent/WO2021007712A1/zh
Priority to CN201980001037.7A priority patent/CN112492890A/zh
Publication of WO2021007712A1 publication Critical patent/WO2021007712A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • the embodiments of the present disclosure relate to a display substrate, a preparation method thereof, and a display device.
  • the display screen of the display device is developing in the direction of large screen and full screen.
  • a display device such as a mobile phone, a tablet computer, etc.
  • the camera device is usually arranged on a side outside the display area of the display screen.
  • the camera device can be combined with the display area of the display screen to reserve a place for the camera device in the display area to maximize the display area of the display screen.
  • At least one embodiment of the present disclosure provides a preparation method of a display substrate, the preparation method comprising: forming a display area and a non-display area, the display area at least partially surrounds the non-display area, and the non-display area includes an aperture area , A first barrier wall is formed between the display area and the opening area, wherein the first barrier wall surrounds the opening area and includes a first metal layer structure. A recess is formed around at least one side surface of the opening area.
  • a conductive layer pattern is formed in the display area and the first barrier wall, wherein the conductive layer is formed
  • the layer pattern includes: forming a conductive material layer on the display area and the first barrier wall, the conductive material layer is disconnected at the first barrier wall, and patterning the conductive material layer to form the Conductive layer pattern.
  • the preparation method provided by at least one embodiment of the present disclosure further includes: forming an opening on the display substrate at a position in the opening area, and combining an image sensor and/or an infrared sensor in the opening area.
  • patterning the conductive material layer includes: forming a photoresist pattern on the conductive material layer, wherein the photoresist pattern covers the first On the at least one side surface of the barrier wall, the conductive material layer is etched using the photoresist pattern as a mask to form the conductive layer pattern.
  • the preparation method provided by at least one embodiment of the present disclosure further includes: forming a light emitting device in the display area, wherein the light emitting device includes a first electrode, a second electrode, and the first electrode and the second electrode.
  • the organic functional layer between the electrodes, and the conductive layer pattern includes the first electrode.
  • the organic functional layer is disconnected at the first barrier wall, the first electrode is an anode, the second electrode is a cathode, and the cathode is also Disconnect at the first barrier wall.
  • the preparation method provided by at least one embodiment of the present disclosure further includes: forming a second metal pattern in the display area, wherein the second metal pattern includes a second metal layer structure, the first metal layer structure, and The second metal layer structure is formed by using the same film layer.
  • forming the first metal layer structure includes: forming a first metal material pattern on a base substrate, and etching the first metal material with a first etching solution Pattern to form the notch.
  • forming the first metal material pattern includes: forming a first sub-metal pattern and a second sub-metal pattern that are sequentially stacked on the base substrate, wherein: The etching speed of the first sub-metal pattern by the first etching solution is greater than the etching speed of the second sub-metal pattern.
  • forming the first metal material pattern includes: forming a third sub-metal pattern, a first sub-metal pattern, and a second sub-metal pattern that are sequentially stacked on the base substrate.
  • the sub-metal pattern wherein the etching rate of the first sub-metal pattern by the first etching solution is greater than the etching rate of the second sub-metal pattern and the third sub-metal pattern.
  • forming the first metal layer structure includes: forming a first metal material pattern, and forming an insulating material layer in the display area and on the first metal material pattern , Using a second etching solution to pattern the insulating material layer to form a patterned insulating layer.
  • the second etching solution also etches the first metal material pattern to form the notch.
  • the insulating material layer includes a photoresist material
  • the second etching solution is a developer of the photoresist material
  • the developer includes tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, alkyl alcohol amine, sodium hydroxide, hydrogen Potassium oxide, sodium carbonate, sodium phosphate, sodium dihydrogen phosphate or sodium acetate.
  • the concentration of the tetramethylammonium hydroxide in the developer is 2-8%, so The time for the developer to etch the first metal material pattern to form the recess is 60 s-200 s.
  • forming the first metal material pattern includes: forming a first sub-metal pattern and a second sub-metal pattern that are sequentially stacked on the base substrate, wherein: The etching rate of the first sub-metal pattern by the second etching solution is greater than the etching rate of the second sub-metal pattern.
  • forming the first metal material pattern includes: forming a third sub-metal pattern, a first sub-metal pattern, and a second sub-metal pattern that are sequentially stacked on the base substrate.
  • the sub-metal pattern wherein the etching speed of the first sub-metal pattern by the second etching solution is greater than the etching speed of the second sub-metal pattern and the third sub-metal pattern.
  • the material of the first sub-metal pattern includes aluminum or copper
  • the material of the second sub-metal pattern includes titanium or molybdenum
  • the material of the first sub-metal pattern includes aluminum or copper
  • the material of the second sub-metal pattern includes titanium or molybdenum
  • the material of the third sub-metal pattern includes titanium or molybdenum
  • the preparation method provided by at least one embodiment of the present disclosure further includes: forming a second barrier wall between the display area and the non-display area, wherein the second barrier wall surrounds the non-display area, And formed on the side of the first barrier wall away from the non-display area, and the second barrier wall and the first barrier wall are formed with the same film layer.
  • At least one embodiment of the present disclosure further provides a display substrate.
  • the display substrate includes a display area, a non-display area, and a first barrier wall between the display area and the non-display area.
  • the display area is at least partially Surrounding the non-display area, the non-display area includes an open area, the first barrier wall surrounds the open area, and includes a first metal layer structure, the first metal layer structure surrounds the open area
  • a recess is formed on at least one side surface of the hole area, and the display area includes a conductive layer pattern, wherein the conductive layer pattern also extends to the first barrier wall and is located on the at least one of the first barrier wall. Disconnect at the side.
  • the display substrate provided by at least one embodiment of the present disclosure further includes an opening located in the opening area and an image sensor and/or an infrared sensor coupled to the opening area.
  • the display substrate provided by at least one embodiment of the present disclosure further includes a light emitting device in the display area, and the light emitting device includes a first electrode, a second electrode, and a gap between the first electrode and the second electrode.
  • the organic functional layer, the conductive layer pattern includes the first electrode.
  • the organic functional layer is disconnected at the first barrier wall, the first electrode is an anode, the second electrode is a cathode, and the cathode is also Disconnect at the first barrier wall.
  • At least one embodiment of the present disclosure further provides a display device, which includes the display substrate formed by the above-mentioned manufacturing method or includes the above-mentioned display substrate.
  • Figure 1A is a schematic plan view of a display substrate
  • FIG. 1B is a schematic cross-sectional view of the display substrate in FIG. 1A along line A-A;
  • FIG. 2A is a schematic plan view of a display substrate provided by at least one embodiment of the present disclosure.
  • FIG. 2B is a schematic cross-sectional view of the display substrate in FIG. 2A along the line B-B;
  • 3A is a schematic cross-sectional view of a first barrier wall in a display substrate provided by at least one embodiment of the present disclosure
  • 3B is another schematic cross-sectional view of the first barrier wall in the display substrate provided by at least one embodiment of the present disclosure
  • FIG. 4A is a schematic plan view of another display substrate provided by at least one embodiment of the present disclosure.
  • FIG. 4B is a schematic cross-sectional view of the display substrate in FIG. 4A along the line B-B;
  • 5A-5B are schematic plan views of a display substrate provided by at least one embodiment of the present disclosure during the manufacturing process
  • 6A-6G are schematic cross-sectional views of the display substrate provided by at least one embodiment of the disclosure during the manufacturing process;
  • FIGS 7A-7B are schematic cross-sectional views of the display substrate provided by at least one embodiment of the disclosure during the manufacturing process;
  • FIG. 8A is a scanning electron microscope image showing the formation of metal particles in the substrate
  • FIG. 8B is a scanning electron microscope image of the functional layer above the metal particles in the display substrate shown in FIG. 8A.
  • the camera device (imaging device) of the display device can be integrated with the display area, and the camera device can be arranged in the display area.
  • FIG. 1A shows a schematic plan view of a display substrate for a display device
  • FIG. 1B is a schematic cross-sectional view of the display substrate in FIG. 1A along the line A-A.
  • the display substrate 100 includes a display area 101.
  • the display area 101 includes a pixel array and has an opening 1011 in the pixel array.
  • the opening 1011 is a reserved position for a camera (not shown).
  • the device may be arranged on the back side of the display substrate 100 opposite to the display side and, for example, overlapped with the opening 1011, so that the camera device can acquire images through the opening 1011.
  • the imaging device and the display area 101 of the display substrate 100 are integrated.
  • the display area 101 has a light-emitting device for display.
  • the light-emitting device is an organic light-emitting diode.
  • All or part of the display area 101 has an organic functional layer 103 (such as an electron transport layer, a light-emitting layer or a hole The transmission layer, etc.) and the electrode layer 104 are usually formed as a whole surface in the display area 101. Therefore, when the encapsulation layer 105 is used for encapsulation, the area near the opening 1011 is often difficult to encapsulate, or even if encapsulated, it is difficult to guarantee the The encapsulation effect of the area. At this time, as shown in FIG.
  • impurities such as water and oxygen can enter the display area 101 from the organic functional layer 103 and the electrode layer 104 formed along the entire surface of the opening 1011, contaminating the functional materials in the display area 101, resulting in The performance of these functional materials degrades, which in turn affects the display effect of the display area 101.
  • a barrier wall may be provided around the opening 1011 to block the organic functional layer 103 and the electrode layer 104 formed on the entire surface, thereby preventing impurities such as water and oxygen from entering the display area 101 from the opening 1011.
  • the form of the barrier wall sometimes affects the structure of the display substrate and the display effect.
  • At least one embodiment of the present disclosure provides a method for manufacturing a display substrate, which can form the above-mentioned barrier wall, and the formation of the barrier wall will not affect other structures of the display substrate, so as to ensure the integrity of the display substrate structure. Furthermore, the reliability of the display substrate is improved.
  • the preparation method of the display substrate includes: forming a display area and a non-display area, the display area at least partially surrounds the non-display area, and the non-display area includes an opening area; forming a first barrier wall between the display area and the opening area; The barrier wall surrounds the opening area and includes a first metal layer structure. At least one side surface of the first metal layer structure surrounding the opening area is formed with a notch; after the first barrier wall is formed, in the display area and the first barrier wall A conductive layer pattern is formed thereon. Forming the conductive layer pattern includes forming a conductive material layer on the display area and the first barrier wall, the conductive material layer is disconnected at the first barrier wall, and the conductive material layer is patterned to form a conductive layer pattern.
  • At least one embodiment of the present disclosure provides a display substrate.
  • the display substrate includes a display area and a non-display area.
  • the display area at least partially surrounds the non-display area.
  • the non-display area includes an aperture area.
  • the display substrate also includes a display area and a non-display area.
  • the first barrier wall between the hole regions, the first barrier wall surrounds the hole region and includes a first metal layer structure. At least one side surface of the first metal layer structure surrounding the hole region is formed with a notch, and the display region includes a conductive
  • the conductive layer pattern extends to the first barrier wall and is disconnected at the at least one side surface of the first barrier wall.
  • At least one embodiment of the present disclosure provides a display device that includes the display substrate formed by the above-mentioned manufacturing method or includes the above-mentioned display substrate.
  • FIG. 2A shows a schematic plan view of the display substrate
  • FIG. 2B is a schematic cross-sectional view of the display substrate in FIG. 2A along the line B-B.
  • the display substrate 200 includes a display area 21 and a non-display area 22.
  • the display area 21 at least partially surrounds the non-display area 22, and the non-display area 22 includes an opening area 222.
  • the display substrate 200 further includes a first barrier wall 23 between the display area 21 and the opening area 222.
  • the first barrier wall 23 is disposed in the non-display area 22 between the display area 21 and the opening area 222.
  • the first barrier wall 23 surrounds the opening area 222, and the first barrier wall 23 includes a first metal layer structure with a notch 231 formed on at least one side surface of the first metal layer structure surrounding the opening area 222.
  • the display area 21 includes a conductive layer pattern 218 that also extends to the first barrier wall 23.
  • the material 2180 of the conductive layer pattern 218 also extends to the first barrier wall 23 to cover the first barrier wall 23. And it is broken at at least one side of the first barrier wall 23.
  • the part of the material 2180 that covers the first barrier wall 23 and is disconnected on at least one side of the first barrier wall 23 and the part of the material 2180 in the display area 22 are formed by using the same conductive material layer through a patterning process to form a conductive layer pattern. Formed together at 218 hours.
  • the side of the first metal layer structure facing the opening area 222 and the side facing away from the opening area 222 have notches 231, so as to be used for the material of the conductive layer pattern 218 2180 is disconnected at both sides of the first barrier wall 23.
  • the first barrier wall 23 may also have a notch 231 on only one side of the first metal layer structure, as long as the first barrier wall 23 can achieve the technical effect of disconnecting the functional layer formed thereon. can.
  • the display substrate 200 further includes a base substrate 201.
  • the opening direction of the notch 231 in the first metal layer structure of the first barrier wall 23 is parallel to the plane where the base substrate 201 is located (ie Board surface).
  • the base substrate 201 is placed in the horizontal direction, and the opening direction of the recess 231 is the horizontal direction.
  • the depth of the notch 231, that is, the distance of the notch 231 into the side surface of the first metal layer structure in a direction parallel to the base substrate 201 may be 0.6 ⁇ m-1 ⁇ m, such as 0.6 ⁇ m, 0.7 ⁇ m, or 0.8 ⁇ m, etc. .
  • the display substrate 200 further includes an opening 221 located in the opening area 222.
  • the opening 221 allows light from the display side (upper side in FIG. 2B) of the display substrate 200 to be transmitted through the display substrate 200 to reach the back side of the display substrate 200 (lower side in FIG. 2B).
  • the display substrate 20 further includes an image sensor 210 and/or an infrared sensor 210 combined with the opening area 222.
  • the image sensor 210 and/or the infrared sensor 210 are combined on the back side of the display substrate 200, and the orthographic projection on the display substrate 200 and the opening 221 at least partially overlap.
  • the image sensor 210 and/or the infrared sensor 210 may implement functions such as image collection, face recognition, infrared sensing and the like through the opening 221.
  • the display substrate 200 integrates the image sensor 210 and/or the infrared sensor 210 with the display area 21, which can increase the screen ratio of the display area 21.
  • the display area 21 includes a pixel array for performing display operations, and the pixel array includes a plurality of pixel units arranged in an array, and these pixel units include a driving circuit, a light emitting device, and the like.
  • the light emitting device includes a first electrode 218A, a second electrode 204, and an organic functional layer between the first electrode 218A and the second electrode 204.
  • the conductive layer pattern 218 includes a first electrode 218A.
  • the organic functional layer includes, for example, a light-emitting material layer 202 and an auxiliary light-emitting layer 203.
  • the auxiliary light-emitting layer 203 is, for example, an electron transport layer, an electron injection layer, a hole transport layer, a hole injection layer, etc., which can improve the luminous efficiency of the light-emitting material layer 202 or emit light.
  • the functional layer of the effect At least part of the organic functional layer of the light-emitting device used for multiple pixel units, such as the auxiliary light-emitting layer 203, and the second electrode 204 of the light-emitting device are usually formed as a whole surface. In this case, the organic functional layer can be formed on the first barrier wall. 23. The side surface with the notch 231 is broken.
  • the first electrode 218A is an anode (for example, the pixel electrode itself or an electrode electrically connected to the pixel electrode), the second electrode 204 is a cathode layer, and the cathode is also disconnected on the side of the first barrier wall 23 with the notch 231. Therefore, when the organic functional layer and the second electrode 204 on the side close to the opening 221 are contaminated by impurities such as water and oxygen, the organic functional layer and the second electrode 204 are separated by the first barrier wall 23, so that these contaminated impurities It does not extend to the organic functional layer and the portion of the second electrode 204 for the light emitting device to emit light.
  • a part of the organic functional layer and a part of the second electrode 204 are also formed on the top of the first barrier wall 23, but these parts are separated from other parts, so there is no transmission channel for impurities such as water and oxygen.
  • the driving circuit included in the pixel unit includes structures such as thin film transistors and capacitors.
  • the thin film transistor includes a second metal pattern
  • the second metal pattern includes a second metal layer structure
  • the first metal layer structure and the second metal layer structure have the same structure and have the same material.
  • the first metal layer structure and the second metal layer structure can be formed in the same layer during the preparation process and have the same multi-layer structure, and in the first metal layer structure and the second metal multi-layer structure, the materials of the corresponding layers are the same. The same, so that the first metal layer structure and the second metal layer structure can be formed by the same film layer.
  • the thin film transistor includes a gate 211, a source and drain 212, etc.
  • the capacitor includes a first electrode 213, a second electrode 214, and a first insulating layer between the first electrode 213 and the second electrode 214 215.
  • the gate 211 or the source and drain 212 may be implemented as a second metal pattern having a second metal layer structure.
  • FIG. 2B shows that the source and drain electrodes 212 include a second metal layer structure.
  • the first metal layer structure of the first barrier wall 23 and the second metal layer structure of the source and drain 212 have the same structure and include the same material, for example, the first metal layer structure of the first barrier wall 23 and the source and drain
  • the second metal layer structure of the electrode 212 is formed in the same layer and has the same multi-layer structure, so that during the preparation process of the display substrate 200, the first metal layer structure of the first barrier wall 23 and the second metal layer of the source and drain 212
  • the structure can be formed using the same film layer.
  • both the first metal layer structure and the second metal layer structure have a multilayer structure such as a double-layer structure or a triple-layer structure.
  • the first metal layer structure of the first barrier wall 23 includes a three-layer metal layer structure, that is, a first sub-metal pattern 232, which is sequentially stacked, is formed on the base substrate 201, The second sub-metal pattern 233 and the third sub-metal pattern 234.
  • the orthographic projection of the first sub-metal pattern 232 on the base substrate 201 is located within the orthographic projection of the second sub-metal pattern 233 on the base substrate 201, and the orthographic projection of the first sub-metal pattern 232 on the base substrate 201 is also Located in the orthographic projection of the third sub-metal pattern 234 on the base substrate 201, a notch 231 is formed on the side surface of the three-layer stack.
  • the first metal layer structure of the first barrier wall 23 includes a double-layer metal layer structure, that is, the first sub-metal pattern 232 and the first sub-metal pattern 232 and The second sub-metal pattern 233.
  • the orthographic projection of the first sub-metal pattern 232 on the base substrate 201 is located within the orthographic projection of the second sub-metal pattern 233 on the base substrate 201, thereby forming a notch 231 on the side surface of the two layers.
  • the organic functional layer and the second electrode 204 when the organic functional layer and the second electrode 204 are formed on the base substrate 201 on which the first barrier wall 23 is formed, the organic functional layer and the second electrode 204 can be formed in the recess of the first barrier wall 23. 231 is disconnected, thereby disconnecting the route of water, oxygen and other impurities entering the display area 21.
  • the display substrate shown in FIG. 2B has the first barrier wall 23 with the above-mentioned three-layer metal layer structure.
  • the second metal layer structure of the source and drain electrodes 212 includes the same layer of metal as the third sub-metal pattern 234.
  • the thickness of the first sub-metal pattern 232 is greater than the thickness of the second sub-metal pattern 233 and the thickness of the third sub-metal pattern 234, thereby making it easier to form the notch 231 And it is more conducive to disconnect the organic functional layer and the second electrode 204 at the first barrier wall 23, so that the first barrier wall 23 can achieve a better barrier effect.
  • the material of the first sub-metal pattern 232 and the material of the second sub-metal pattern 233 have different etching rates during etching, and the first metal layer structure has a third sub-metal pattern.
  • the material of the third sub-metal pattern 234 and the material of the second sub-metal pattern 233 may be the same.
  • the material of the first sub-metal pattern 232 is etched faster than the material of the second sub-metal pattern 233, thereby It is easy to form the first metal layer structure with the notch 231 during preparation.
  • the material of the first sub-metal pattern 232 includes metals such as aluminum or copper or alloys thereof
  • the material of the second sub-metal pattern 233 includes metals such as titanium or molybdenum or their alloys
  • the third sub-metal pattern 234 The material of is the same as that of the second sub-metal pattern 233, including metals such as titanium or molybdenum or their alloys.
  • the material combination of the first sub-metal pattern 232 and the second sub-metal pattern 233 may be aluminum/titanium, aluminum/molybdenum, copper/titanium, or copper. /Molybdenum etc.
  • the material combination of the third sub-metal pattern 234, the first sub-metal pattern 232, and the second sub-metal pattern 233 may be titanium/aluminum/titanium, molybdenum/aluminum/molybdenum, titanium /Copper/titanium or molybdenum/copper/molybdenum etc.
  • the display substrate 200 may also include a second insulating layer 216 covering the capacitor, a planarizing layer 217 for planarizing the driving circuit, a pixel defining layer 219 defining the pixel array, and forming a packaging space.
  • the structure of the columnar spacer 208, the encapsulation layer 205 for sealing, and the second encapsulation layer 206 and the third encapsulation layer 207 to further improve the encapsulation effect are not repeated in the embodiment of the present disclosure.
  • the thin film transistor since one of the source and drain electrodes 212 of the thin film transistor is connected to the first electrode 218A, the thin film transistor may be a driving transistor, that is, the light emitting current flowing through the light emitting device is controlled by the applied data signal. In order to control the gray scale of the pixel unit in the display process.
  • more than one barrier wall may be provided around the opening area 2011 of the display panel, that is, it may include multiple barrier walls, for example, two, three, four, five, etc. are arranged side by side, To enhance the barrier effect.
  • the display substrate 200 shown in FIGS. 4A and 4B includes two barrier walls.
  • the display substrate is different from the display substrate shown in FIGS. 3A and 3B in that in addition to the first barrier wall 23, the display substrate also includes The second barrier wall 24.
  • the second barrier wall 24 surrounds the opening area 222, and the second barrier wall 24 is disposed on a side of the first barrier wall 23 far away from the hole area 222, and is spaced apart by a certain distance.
  • the second barrier wall 24 also includes a first metal layer structure, and at least one side surface of the first metal layer structure of the second barrier wall 24 surrounding the opening area 222 has a notch 241. Therefore, the first barrier wall 23 and the second barrier wall 24 can be formed by using the same film layer in the manufacturing process.
  • FIG. 4A and FIG. 4B reference may be made to the above-mentioned embodiment, which will not be repeated here.
  • At least one embodiment of the present disclosure also provides a method for preparing a display substrate.
  • the preparation method includes: forming a display area and a non-display area, the display area at least partially surrounds the non-display area, and the non-display area includes an open-hole area.
  • a first barrier wall is formed between the opening areas.
  • the first barrier wall surrounds the opening area and includes a first metal layer structure. At least one side surface of the first metal layer structure surrounding the opening area is formed with a notch;
  • a conductive layer pattern is formed in the display area and the first barrier wall.
  • Forming the conductive layer pattern includes forming a conductive material layer on the display area and the first barrier wall, the conductive material layer is disconnected at the first barrier wall, and the conductive material layer is patterned to form the conductive layer pattern.
  • the conductive layer pattern is formed after the first barrier wall, so that the preparation process for forming the conductive layer pattern, such as an etching process, will not further etch the first barrier wall, and thus will not affect other structures of the display substrate. This affects to ensure the integrity of the display substrate structure, thereby improving the reliability of the display substrate.
  • the metal ions may be included in the first barrier wall, such as aluminum, undergoes a substitution reaction to generate metallic silver.
  • the metallic silver will be present in the form of particles on the display substrate, such as on the conductive layer pattern, Thereby affecting the integrity of the functional layer formed later.
  • the luminescent material is formed after the conductive layer pattern, the luminescent material is easily broken at the metallic silver particles, which makes the luminescent material discontinuous, and thus causes the display substrate to form defects such as dark spots during display.
  • FIG. 8A shows a scanning electron microscope image of metal particles, such as silver particles (circled in the figure) formed in a display substrate
  • FIG. 8B is a functional layer above the metal particles in the display substrate shown in FIG. 8A.
  • the preparation method may further include: forming an opening on the display substrate at a position in the opening area.
  • the opening is, for example, used to combine image sensors and/or infrared sensors and other devices with functions such as image acquisition, face recognition, and infrared sensing.
  • the preparation method may further include: combining an image sensor and/or an infrared sensor in the opening area.
  • the image sensor and/or the infrared sensor are integrated with the display area, which can increase the screen ratio of the display area.
  • the display area 21 and the non-display area 22 are first formed, and the non-display area 22 includes an aperture area 222.
  • forming the display area 21 includes forming a light-emitting device for the pixel array and a driving circuit for driving the light-emitting device.
  • the embodiments of the present disclosure do not limit the specific structures and manufacturing methods of the light emitting device of the pixel array and the driving circuit for driving the light emitting device.
  • a driving circuit layer is formed on the base substrate 201, including the formation of thin film transistors and storage capacitors in the display area 21.
  • a patterning process can be used to sequentially form functional film layers of structures such as thin film transistors and storage capacitors on the base substrate 201.
  • a patterning process includes photoresist formation, exposure, development, and etching.
  • forming the display area 21 includes forming a second metal pattern.
  • forming a thin film transistor in the display area 21 includes forming a second metal pattern.
  • the second metal pattern includes a second metal layer structure.
  • the structure and the second metal layer structure are formed by the same film layer, thereby simplifying the manufacturing process.
  • the first metal layer structure and the second metal layer structure may be a double-layer structure or a three-layer structure, etc., and the specific structure and materials can be referred to the above-mentioned embodiments, which will not be repeated here.
  • forming the first metal layer structure includes: forming a first metal material pattern on a base substrate, and etching the first metal material pattern with a first etching solution to form a notch.
  • forming the first metal material pattern includes: forming a first sub-metal pattern and a second sub-metal pattern that are sequentially stacked on the base substrate.
  • the etching speed of the first sub-metal pattern by an etching solution is greater than the etching speed of the second sub-metal pattern.
  • forming the first metal material pattern includes: forming a third sub-metal pattern, a first sub-metal pattern, and a second sub-metal layer sequentially stacked on the base substrate. At this time, the etching speed of the first sub-metal pattern by the first etching solution is greater than the etching speed of the second and third sub-metal patterns.
  • the gate 211 of the thin film transistor and the first electrode 213 of the storage capacitor are formed using the same film layer and using the same patterning process to simplify the manufacturing process.
  • the gate 211 and the first electrode 213 of the storage capacitor include metals or alloy materials such as aluminum, titanium, and cobalt.
  • a gate material layer is first formed by sputtering or evaporation, and then a patterning process is performed on the gate material layer to form the patterned gate 211 and the first electrode 213 of the storage capacitor.
  • the source and drain electrodes 212 of the thin film transistor may be formed in a multilayer structure, such as a three-layer structure shown in the figure.
  • the source and drain electrodes 212 are implemented as the aforementioned second metal pattern.
  • three metal material layers such as a titanium material layer, an aluminum material layer, and a titanium material layer
  • three metal material layers can be sequentially formed by sputtering or evaporation, and then the three metal material layers are patterned by the same patterning process to form the composition
  • the titanium 2121/aluminum 2122/titanium 2123 three-layer electrode structure of the source and drain 212, and the first metal material pattern 2310 is formed at the same time, that is, the initial first barrier wall used to form the first barrier wall, the first metal material pattern 2310 surrounds Hole area.
  • the first metal material pattern 2310 includes a third sub-metal pattern 234, a first sub-metal pattern 232, and a second sub-metal pattern 233 that are sequentially stacked on a base substrate 201.
  • the etching method used in the above patterning process may be dry etching, so that the source and drain electrodes 212 and the side surfaces of the first metal material pattern 2310 formed have a flat structure.
  • a flat layer 217 is formed.
  • the flat layer 217 may be formed by a patterning process using organic materials such as resin materials or inorganic materials such as silicon nitride and silicon oxide.
  • the formed flat layer 217 covers the source and drain 212, and the flat layer 217 has a via hole exposing the source and drain 212, so that the first electrode 218A formed later is connected to the source and drain 212 through the via hole.
  • the first metal material pattern 2310 is etched with the first etching solution to form the notch 231.
  • the etching speed of the first sub-metal pattern 232 by the first etching solution is greater than that of the second sub-metal pattern 233 and the third sub-metal pattern 231 Speed, thereby forming the notch 231.
  • the source and drain 212 are covered by the flat layer 217, the source and drain 212 will not be further etched.
  • the light emitting device includes a first electrode, a second electrode, and an organic functional layer between the first electrode and the second electrode.
  • the organic functional layer may include a light-emitting material layer and an auxiliary light-emitting layer.
  • the first electrode 218A is formed first, and the first electrode 218A is implemented as the aforementioned conductive layer pattern.
  • forming the first electrode 218A includes: forming a conductive material layer 2180 on the display area 21 and the first barrier wall 23, the conductive material layer 2180 is disconnected at the first barrier wall 23, and then the conductive material layer 2180 The patterning is performed to form a conductive layer pattern including the first electrode 218A.
  • patterning the conductive material layer 2180 includes: forming a photoresist pattern on the conductive material layer 2180.
  • the photoresist pattern includes a first part 251 and a second part 252, and the first part 251 is used for
  • the first electrode 218A in the display area 21 is formed, and the second portion 252 covers at least one side surface of the first barrier wall 23 to protect the first barrier wall 23 from being etched.
  • the conductive material layer 2180 is etched using the photoresist pattern as a mask to form a conductive layer pattern 218.
  • the conductive layer pattern 218 includes the first electrode 218A.
  • the conductive layer pattern 218 also includes the first barrier wall 23 and is covered by Part of the material 2180 where the first barrier wall 23 is broken.
  • the first electrode 218A is an anode.
  • the material of the conductive material layer 2180 includes metal oxides such as ITO and IZO, or metals such as Ag, Al, Mo, or alloys thereof.
  • the first electrode 218A is connected to the source and drain 212 through the via hole in the planarization layer 217.
  • the etching solution used will not etch the first metal material pattern 2310, thereby avoiding the etching solution and the metal material included in the first metal material pattern 2310
  • the reaction generates metal particles, which can prevent the metal particles from affecting the integrity of other functional layers formed later, and improve the reliability of the display substrate.
  • a pixel defining layer 219 is formed, and an organic functional layer is formed in the opening of the pixel defining layer 219, including a light-emitting material layer 202 and an auxiliary light-emitting layer 203.
  • a pixel defining layer 219 exposing the first electrode 218A is formed on the first electrode 218A through a patterning process.
  • the material of the pixel defining layer 219 includes organic materials such as resin materials or inorganic materials such as silicon nitride and silicon oxide, and the formed pixel defining layer 219 has openings in order to later form the organic functional layer and the second electrode 204 of the light emitting device. .
  • the luminescent material layer 202 may be formed in the opening of the pixel defining layer 219 by inkjet printing or evaporation. Then, as shown in FIG. 13C, columnar spacers 208, auxiliary light-emitting layers 203, and second electrodes 204 are formed on the pixel defining layer 219 on which the light-emitting material layer 202 is formed.
  • the columnar spacers 208 can be formed by a patterning process using organic materials such as resin materials or inorganic materials such as silicon nitride and silicon oxide, and the columnar spacers 2026 are used to form an encapsulation space to facilitate subsequent formation of an encapsulation layer.
  • the auxiliary light-emitting layer 203 and the second electrode layer 204 are formed as a whole surface by evaporation, deposition or inkjet printing.
  • the luminescent material layer 202 includes a luminescent material that can emit light of colors such as red, green, or blue, and the auxiliary luminescent layer 203 may be, for example, an electron injection layer or an electron transport layer.
  • the second electrode 204 is, for example, a cathode.
  • the material of the second electrode 204 includes metals such as Mg, Ca, Li, or Al, or their alloys, or metal oxides such as IZO, ZTO, or PEDOT/PSS (poly 3,4-ethylene Dioxythiophene/polystyrene sulfonate) and other organic materials with conductive properties.
  • metals such as Mg, Ca, Li, or Al, or their alloys, or metal oxides such as IZO, ZTO, or PEDOT/PSS (poly 3,4-ethylene Dioxythiophene/polystyrene sulfonate) and other organic materials with conductive properties.
  • the organic functional layer formed as a whole surface and the second electrode 204 are disconnected on the side of the first barrier wall 23 with the notch 231. In the figure, both sides of the first barrier wall 23 have notches, so the organic function The layer and the second electrode 204 are completely separated on both sides of the first barrier wall 23.
  • the encapsulation layer 205 can be formed on the second electrode 204 by chemical vapor deposition, physical vapor deposition, coating, or the like.
  • the encapsulation layer 205 can provide encapsulation and protection to the functional structure located in the display area.
  • a second encapsulation layer 206 and a third encapsulation layer 207 may also be formed on the encapsulation layer 205.
  • the second packaging layer 206 can planarize the packaging layer 205, and the third packaging layer 207 can form an outer packaging.
  • the encapsulation layer 205 and the third encapsulation layer 207 use inorganic materials, such as silicon nitride, silicon oxide, silicon oxynitride, etc.
  • the second encapsulation layer 206 uses organic materials, such as polyimide. (PI), epoxy resin, etc.
  • PI polyimide.
  • the encapsulation layer 205, the second encapsulation layer 206, and the third encapsulation layer 207 are formed as a composite encapsulation layer, which forms multiple protections for the functional structure of the display area, and has a better encapsulation effect.
  • other necessary functional film layers may be formed in the display area 201 according to needs, and these film layers may be formed by conventional methods, which will not be repeated here.
  • an opening 221 is formed in the opening area 222.
  • a laser cutting or mechanical punching method is used to open the display substrate 200 to form the opening 221.
  • the opening 221 penetrates the base substrate 201 and the functional layer thereon, so the base substrate 201 is also formed with an opening.
  • the opening position can be installed with an image sensor, an infrared sensor, etc., and connected with a signal such as a central processing unit.
  • the image sensor or infrared sensor can be arranged on the side of the base substrate 201 away from the light-emitting structure (that is, the non-display side of the display substrate), and can realize photography, facial recognition, infrared sensing, etc. through the opening 221.
  • Kind of function is.
  • the thin film transistor shown is of a top gate type, but the embodiment of the present disclosure is not limited thereto, for example, the thin film transistor may also be of a bottom gate type.
  • the driving circuit may include a plurality of thin film transistors, and these thin film transistors may be top-gate or bottom-gate, and may be N-type or P-type, which is not limited in the embodiments of the present disclosure.
  • the light-emitting device is an organic light-emitting diode or a quantum dot light-emitting diode.
  • the organic light-emitting diode may be a top-gate emission type, a bottom emission type or a double-side emission type, and the organic functional layer of the organic light-emitting diode It may be a composite layer, which includes an organic light-emitting material layer and other auxiliary light-emitting layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer.
  • the embodiments of the present disclosure do not limit the specific structure and type of the organic light emitting diode.
  • the preparation method of some embodiments of the present disclosure can also form the display substrate as shown in FIGS. 4A and 4B.
  • the difference from the above example is that when the display substrate as shown in FIGS. 4A and 4B is formed, the display substrate A second barrier wall is also formed between the display area and the opening area.
  • the second barrier wall surrounds the opening area and is formed on the side of the first barrier wall far away from the hole area.
  • the second barrier wall can be
  • the first barrier wall is formed by the same film layer, so that the formed multilayer barrier wall can play a better barrier effect without increasing the process steps.
  • forming the first metal layer structure includes: forming a first metal material pattern, and the method of forming the first metal material pattern can refer to the first metal material pattern 2310 formed in FIG. 6A in the above embodiment.
  • an insulating material layer 2170 is formed in the display area and on the first metal material pattern 2310, and then a second etching solution is used to perform the insulating material layer 2170. Patterned to form a patterned insulating layer 217.
  • the second etching solution can also etch the first metal material pattern 2310 to form the notch 231. Therefore, the insulating layer 217 and the first barrier wall 23 can be formed using the same etching solution, thereby simplifying the manufacturing process of the display substrate.
  • forming the first metal material pattern includes forming a first sub-metal pattern and a second sub-metal pattern that are sequentially stacked on the base substrate. Referring to FIG. 3B, this At this time, the etching speed of the first sub-metal pattern 232 by the second etching solution is greater than the etching speed of the second sub-metal pattern 233, thereby facilitating the formation of the notch 231.
  • forming the first metal material pattern includes forming a third sub-metal pattern, a first sub-metal pattern, and a second sub-metal pattern that are sequentially stacked on the base substrate.
  • the etching speed of the first sub-metal pattern 232 by the second etching solution is greater than the etching speed of the second sub-metal pattern 233 and the third sub-metal pattern 234.
  • the insulating material layer includes a photoresist material, such as a photoresist material such as polyimide.
  • the second etching solution may be a developer of the photoresist material.
  • the developer is not only used to develop the exposed photoresist material (ie photoresist layer) to obtain a photoresist pattern, the developer also has an etching effect on the first metal material pattern 2310, such as for different sub
  • the metal patterns have different etching rates to facilitate the formation of the recesses 231 of the first metal layer structure.
  • the obtained photoresist pattern can also be used in subsequent patterning processes, for example.
  • the developer includes reagents that can simultaneously etch the photoresist material of the insulating material layer and the first metal material pattern 2310, such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetramethylammonium hydroxide.
  • reagents that can simultaneously etch the photoresist material of the insulating material layer and the first metal material pattern 2310, such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetramethylammonium hydroxide.
  • these reagents have different etching rates for different sub-metal patterns in the first metal material pattern 2310.
  • the etching rate for the first sub-metal pattern 232 is greater than that for the second sub-metal pattern 233 and the third sub-metal pattern.
  • the etching rate is 234 so as to form the notch 231 of the first metal layer structure.
  • the developer also includes other solvents or additives, such as water and surfactants, which are not limited in the embodiments of the present disclosure.
  • the concentration of the tetramethylammonium hydroxide in the developer is 2-8%
  • the developer etches the first metal material pattern 2310 to form the notch
  • the time of 231 is 60 seconds (s)-200 seconds (s).
  • the formation depth of the notch that is, the distance of the notch 231 into the side surface of the first metal layer structure in a direction parallel to the base substrate 201, is, for example, 0.6 ⁇ m-1 ⁇ m. Therefore, the first metal layer structure of the first barrier wall can fully realize the barrier effect.
  • the time for the developer to etch the first metal material pattern 2310 to form the notch 231 is 180 seconds; when the concentration of methyl ammonium hydroxide is 7 %, the developer etches the first metal material pattern 2310 to form the notch 231 for 60 seconds; when the concentration of methyl ammonium hydroxide is 5%, the developer etches the first metal material pattern 2310 to form the notch
  • the time of 231 is 120s and so on.
  • the concentration of methyl ammonium hydroxide and the time for the developer to etch the first metal material pattern 2310 to form the recess 231 can be adjusted according to specific requirements and actual conditions, which are not limited in the embodiments of the present disclosure.
  • the insulating layer 217 and the first barrier wall 23 are formed using the same etching solution, so that the manufacturing process of the display substrate can be simplified; in addition, the above method can also be used in the first
  • the conductive layer pattern is formed after a barrier wall, so that the preparation process for forming the conductive layer pattern, such as an etching process, will not further etch the first barrier wall, and thus will not affect other structures of the display substrate to ensure the display substrate
  • the integrity of the structure further improves the display quality and reliability of the display substrate.
  • At least one embodiment of the present disclosure further provides a display device, which includes a display substrate obtained by the preparation method provided by the embodiment of the present disclosure or the display substrate provided by the embodiment of the present disclosure.
  • the display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.
  • the embodiment of the present disclosure does not limit this.

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Abstract

一种显示基板及其制备方法、显示装置。该显示基板(200)的制备方法包括：形成显示区(21)和非显示区(22)，非显示区(22)包括开孔区(222)；在显示区(21)和开孔区(222)之间形成第一阻隔墙(23)，第一阻隔墙(23)围绕开孔区(222)且包括第一金属层结构，第一金属层结构的围绕开孔区(222)的至少一个侧面形成有凹口(231)；在第一阻隔墙(23)形成后，在显示区(21)内以及第一阻隔墙(23)上形成导电层图案(218)；形成导电层图案(218)包括：在显示区(21)和第一阻隔墙(23)上形成导电材料层(2180)，导电材料层(2180)在第一阻隔墙(23)处断开，对导电材料层(2180)进行构图以形成导电层图案(218)。该显示基板(200)将摄像装置与显示区(21)结合在一起，具有较大的占屏比，且具有较好的显示效果与信赖性。

Description

显示基板及其制备方法、显示装置 技术领域
本公开的实施例涉及一种显示基板及其制备方法、显示装置。
背景技术
目前，显示器件的显示屏正往大屏化、全屏化方向发展。通常，显示器件(例如手机、平板电脑等)具有摄像装置(或成像装置)，该摄像装置通常设置在显示屏显示区域外的一侧。但是，由于摄像装置的安装需要一定的位置，因此不利于显示屏的全屏化、窄边框设计。例如，可以将摄像装置与显示屏的显示区域结合在一起，在显示区域中为摄像装置预留位置，以获得显示屏显示区域的最大化。
发明内容
本公开至少一实施例提供一种显示基板的制备方法，该制备方法包括：形成显示区和非显示区，所述显示区至少部分围绕所述非显示区，所述非显示区包括开孔区，在所述显示区和所述开孔区之间形成第一阻隔墙，其中，所述第一阻隔墙围绕所述开孔区且包括第一金属层结构，所述第一金属层结构的围绕所述开孔区的至少一个侧面形成有凹口，在所述第一阻隔墙形成后，在所述显示区内以及所述第一阻隔墙上形成导电层图案，其中，形成所述导电层图案包括：在所述显示区和所述第一阻隔墙上形成导电材料层，所述导电材料层在所述第一阻隔墙处断开，对所述导电材料层进行构图以形成所述导电层图案。
例如，本公开至少一实施例提供的制备方法还包括：在所述显示基板的位于所述开孔区的位置形成开孔，以及将图像传感器和/或红外传感器结合于所述开孔区。
例如，本公开至少一实施例提供的制备方法中，对所述导电材料层进行构图包括：在所述导电材料层上形成光刻胶图案，其中，所述光刻胶图案覆盖所述第一阻隔墙的所述至少一个侧面，以所述光刻胶图案为掩膜刻蚀所述导电材料层以形成所述导电层图案。
例如，本公开至少一实施例提供的制备方法还包括：在所述显示区内形成发光器件，其中，所述发光器件包括第一电极、第二电极和所述第一电极和所述第二电极之间的有机功能层，所述导电层图案包括所述第一电极。
例如，本公开至少一实施例提供的制备方法中，所述有机功能层在所述第一阻隔墙处断开，所述第一电极为阳极，所述第二电极为阴极，所述阴极也在所述第一阻隔墙处断开。
例如，本公开至少一实施例提供的制备方法还包括：在所述显示区内形成第二金属图案，其中，所述第二金属图案包括第二金属层结构，所述第一金属层结构和所述第二金属层结构采用相同的膜层形成。
例如，本公开至少一实施例提供的制备方法中，形成所述第一金属层结构包括：在衬底基板上形成第一金属材料图案，采用第一刻蚀液刻蚀所述第一金属材料图案以形成所述凹口。
例如，本公开至少一实施例提供的制备方法中，形成所述第一金属材料图案包括：在所述衬底基板上形成依次叠层的第一子金属图案和第二子金属图案，其中，所述第一刻蚀液对所述第一子金属图案的刻蚀速度大于对所述第二子金属图案的刻蚀速度。
例如，本公开至少一实施例提供的制备方法中，形成所述第一金属材料图案包括：在所述衬底基板上形成依次叠层的第三子金属图案、第一子金属图案和第二子金属图案，其中，所述第一刻蚀液对所述第一子金属图案的刻蚀速度大于对所述第二子金属图案和所述第三子金属图案的刻蚀速度。
例如，本公开至少一实施例提供的制备方法中，形成所述第一金属层结构包括：形成第一金属材料图案，在所述显示区中以及所述第一金属材料图案上形成绝缘材料层，采用第二刻蚀液对所述绝缘材料层进行构图，以形成图案化的绝缘层。
例如，本公开至少一实施例提供的制备方法中，所述第二刻蚀液还刻蚀所述第一金属材料图案以形成所述凹口。
例如，本公开至少一实施例提供的制备方法中，所述绝缘材料层包括光刻胶材料，所述第二刻蚀液为所述光刻胶材料的显影液。
例如，本公开至少一实施例提供的制备方法中，所述显影液包括四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵、烷基醇胺、氢氧化钠、氢氧化钾、碳酸钠、磷酸钠、磷酸二氢钠或者醋酸钠。
例如，本公开至少一实施例提供的制备方法中，当所述显影液包括四甲基氢氧化铵时，所述显影液中所述四甲基氢氧化铵的浓度为2-8％，所述显影液刻蚀所述第一金属材料图案以形成所述凹口的时间为60s-200s。
例如，本公开至少一实施例提供的制备方法中，形成所述第一金属材料图案包括：在所述衬底基板上形成依次叠层的第一子金属图案和第二子金属图案，其中，所述第二刻蚀液对所述第一子金属图案的刻蚀速度大于对所述第二子金属图案的刻蚀速度。
例如，本公开至少一实施例提供的制备方法中，形成所述第一金属材料图案包括：在所述衬底基板上形成依次叠层的第三子金属图案、第一子金属图案和第二子金属图案，其中，所述第二刻蚀液对所述第一子金属图案的刻蚀速度大于对所述第二子金属图案和所述第三子金属图案的刻蚀速度。
例如，本公开至少一实施例提供的制备方法中，所述第一子金属图案的材料包括铝或铜，所述第二子金属图案的材料包括钛或钼。
例如，本公开至少一实施例提供的制备方法中，所述第一子金属图案的材料包括铝或铜，所述第二子金属图案的材料包括钛或钼，所述第三子金属图案的材料包括钛或钼。
例如，本公开至少一实施例提供的制备方法还包括：在所述显示区和所述非显示区之间还形成第二阻隔墙，其中，所述第二阻隔墙围绕所述非显示区，并且形成在所述第一阻隔墙的远离所述非显示区的一侧，所述第二阻隔墙与所述第一阻隔墙采用相同的膜层形成。
本公开至少一实施例还提供一种显示基板，该显示基板包括：显示区、非显示区以及在所述显示区和所述非显示区之间的第一阻隔墙，所述显示区至少部分围绕所述非显示区，所述非显示区包括开孔区，所述第一阻隔墙围绕所述开孔区，且包括第一金属层结构，所述第一金属层结构的围绕所述开孔区的至少一个侧面形成有凹口，所述显示区包括导电层图案，其中，所述导电层图案还延伸至所述第一阻隔墙上且在所述第一阻隔墙的所述至少一个侧面处断开。
例如，本公开至少一实施例提供的显示基板还包括位于所述开孔区的开孔以及结合于所述开孔区的图像传感器和/或红外传感器。
例如，本公开至少一实施例提供的显示基板还包括在所述显示区内的发光器件，所述发光器件包括第一电极、第二电极和所述第一电极和所述第二 电极之间的有机功能层，所述导电层图案包括所述第一电极。
例如，本公开至少一实施例提供的显示基板中，所述有机功能层在所述第一阻隔墙处断开，所述第一电极为阳极，所述第二电极为阴极，所述阴极也在所述第一阻隔墙处断开。
本公开至少一实施例还提供一种显示装置，包括上述制备方法形成的显示基板，或者包括上述显示基板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1A为一种显示基板的平面示意图；
图1B为图1A中的显示基板沿A-A线的截面示意图；
图2A为本公开至少一实施例提供的一种显示基板的平面示意图；
图2B为图2A中的显示基板沿B-B线的截面示意图；
图3A为本公开至少一实施例提供的显示基板中第一阻隔墙的截面示意图；
图3B为本公开至少一实施例提供的显示基板中第一阻隔墙的另一截面示意图；
图4A为本公开至少一实施例提供的另一种显示基板的平面示意图；
图4B为图4A中的显示基板沿B-B线的截面示意图；
图5A-5B为本公开至少一实施例提供的显示基板在制备过程中的平面示意图；
图6A-6G为本公开至少一实施例提供的显示基板在制备过程中的截面示意图；
图7A-7B为本公开至少一实施例提供的显示基板在制备过程中的截面示意图；
图8A为一种显示基板中形成金属颗粒的扫描电镜图；
图8B为图8A所示的显示基板中金属颗粒上方的功能层的扫描电镜图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
为实现显示装置的显示区域的最大化，可以将显示装置所具有的摄像装置(成像装置)与显示区域整合在一起，将摄像装置布置在显示区域之中。
例如，图1A示出了一种用于显示装置的显示基板的平面示意图，图1B为图1A中的显示基板沿A-A线的截面示意图。
如图1A所示，显示基板100包括显示区域101，显示区域101包括像素阵列且具有在像素阵列中的开孔1011，该开孔1011为用于摄像装置(未示出)预留位置，摄像装置可以设置在该显示基板100的与显示侧相对的背侧且例如与开孔1011重叠设置，从而摄像装置可以通过开孔1011获取图像。由此，将摄像装置与显示基板100的显示区域101整合在一起。
显示区域101具有用于显示的发光器件，例如该发光器件为有机发光二极管，显示区域101的全部或部分中的多个发光器件具有的有机功能层103(例如电子传输层、发光层或空穴传输层等)和电极层104通常在显示区101中形成为一整面，因此采用封装层105进行封装时，位于开孔1011附近的区域往往难以被封装，或者即使被封装，也难以保证该区域的封装效果。此时，如图1B所示，例如水、氧等杂质可以从开孔1011沿整面形成的有机功能层103和电极层104进入到显示区域101内部，污染显示区域101中的功能材料，导致这些功能材料的性能退化，进而影响显示区域101的显示效果。
例如，可以在开孔1011的周围设置阻隔墙，以隔断整面形成的有机功能层103和电极层104，从而防止水、氧等杂质从开孔1011进入到显示区域101内。然而，阻隔墙的形式方式有时也会对显示基板的结构以及显示效果等产生影响。
本公开至少一实施例提供一种显示基板的制备方法，该制备方法可形成上述阻隔墙，并且该阻隔墙的形成不会对显示基板的其他结构造成影响，以保证显示基板结构的完整性，进而提高显示基板的信赖性。
该显示基板的制备方法包括：形成显示区和非显示区，显示区至少部分围绕非显示区，非显示区包括开孔区；在显示区和开孔区之间形成第一阻隔墙，第一阻隔墙围绕开孔区且包括第一金属层结构，第一金属层结构的围绕开孔区的至少一个侧面形成有凹口；在第一阻隔墙形成后，在显示区内以及第一阻隔墙上形成导电层图案。形成该导电层图案包括：在显示区和第一阻隔墙上形成导电材料层，导电材料层在第一阻隔墙处断开，对导电材料层进行构图以形成导电层图案。
本公开至少一实施例提供一种显示基板，该显示基板包括显示区和非显示区，显示区至少部分围绕非显示区，非显示区包括开孔区，该显示基板还包括在显示区和开孔区之间第一阻隔墙，第一阻隔墙围绕开孔区，且包括第一金属层结构，第一金属层结构的围绕开孔区的至少一个侧面形成有凹口，该显示区包括导电层图案，该导电层图案延伸至第一阻隔墙上，且在第一阻隔墙的所述至少一个侧面处断开。
本公开至少一实施例提供一种显示装置，包括上述制备方法形成的显示基板，或者包括上述显示基板。
下面通过几个具体的实施例对本公开一些实施例的显示基板及其制备方法、显示装置进行说明。
本公开至少一实施例提供一种显示基板，图2A示出了该显示基板的平面示意图，图2B为图2A中的显示基板沿B-B线的截面示意图。
该显示基板200包括显示区21和非显示区22，显示区21至少部分围绕非显示区22，非显示区22包括开孔区222。显示基板200还包括在显示区21和开孔区222之间第一阻隔墙23，此时，第一阻隔墙23设置在显示区21和开孔区222之间的非显示区22。第一阻隔墙23围绕开孔区222，并且，第一阻隔墙23包括第一金属层结构，该第一金属层结构的围绕开孔区222 的至少一个侧面形成有凹口231。显示区21包括导电层图案218，导电层图案218还延伸到第一阻隔墙23上，例如，导电层图案218的材料2180还延伸到第一阻隔墙23上，以覆盖第一阻隔墙23，并且在第一阻隔墙23的至少一个侧面处断开。例如，覆盖第一阻隔墙23且在第一阻隔墙23的至少一个侧面处断开的部分材料2180与在显示区22内的部分材料2180是在采用同一导电材料层通过构图工艺形成导电层图案218时一起形成的。
例如，在图2B示出的第一金属层结构中，第一金属层结构面向开孔区222的侧面和背离开孔区222的侧面均具有凹口231，从而用于导电层图案218的材料2180在第一阻隔墙23的两个侧面处均断开。例如，在其他实施例中，第一阻隔墙23也可以仅在第一金属层结构的一个侧面具有凹口231，只要第一阻隔墙23可以实现断开其上形成的功能层的技术效果即可。
例如，如图2B所示，显示基板200还包括衬底基板201，例如，第一阻隔墙23的第一金属层结构中的凹口231的开口方向平行于衬底基板201所在的平面(即板面)。例如，在图2B的实施例中，衬底基板201沿水平方向放置，凹口231的开口方向为水平方向。例如，凹口231的深度，即凹口231在沿平行于衬底基板201的方向深入第一金属层结构的侧面的距离，可以为0.6μm-1μm，例如0.6μm、0.7μm或者0.8μm等。
例如，显示基板200还包括位于开孔区222的开孔221。该开孔221允许来自显示基板200的显示侧(图2B中的上侧)的光传输通过显示基板200，从而到达显示基板200的背侧(图2B中的下侧)。
例如，在一些实施例中，显示基板20还包括结合于开孔区222的图像传感器210和/或红外传感器210。例如，图像传感器210和/或红外传感器210结合在显示基板200的背侧，并且在显示基板200上的正投影与开孔221至少部分重叠。例如，图像传感器210和/或红外传感器210可以通过开孔221实现图像采集、人脸识别、红外感应等功能。由此，显示基板200将图像传感器210和/或红外传感器210与显示区21整合在一起，可提高显示区21的占屏比。
例如，显示区21包括用于进行显示操作的像素阵列，该像素阵列包括阵列排布的多个像素单元，这些像素单元包括驱动电路、发光器件等。例如，发光器件包括第一电极218A、第二电极204和第一电极218A和第二电极204之间的有机功能层。例如，导电层图案218包括第一电极218A。有机功 能层例如包括发光材料层202和辅助发光层203，辅助发光层203例如为电子传输层、电子注入层、空穴传输层、空穴注入层等可提高发光材料层202的发光效率或者发光效果的功能层。用于多个像素单元的发光器件的有机功能层的至少部分，例如辅助发光层203，和发光器件的第二电极204通常形成为一整面，此时，有机功能层可在第一阻隔墙23具有凹口231的侧面断开。
例如，第一电极218A为阳极(例如为像素电极本身或与像素电极电连接的电极)，第二电极204为阴极层，阴极也在第一阻隔墙23具有凹口231的侧面断开。由此，当位于靠近开孔221一侧的有机功能层和第二电极204被水、氧等杂质污染时，由于有机功能层和第二电极204被第一阻隔墙23隔断，使得这些污染杂质不会延伸至有机功能层和第二电极204的用于发光器件进行发光的部分中。例如，第一阻隔墙23的顶部上也形成有部分有机功能层和部分第二电极204，但是这些部分与其他部分相分离，因此不会形成水、氧等杂质的传输通道。
例如，像素单元包括的驱动电路包括薄膜晶体管、电容等结构。例如，该薄膜晶体管包括第二金属图案，该第二金属图案包括第二金属层结构，第一金属层结构和第二金属层结构的结构相同，并且具有相同的材料。例如，第一金属层结构和第二金属层结构在制备工艺中可同层形成且具有相同的多层结构，并且在第一金属层结构和第二金属多层结构中，对应层的材料均相同，由此第一金属层结构和第二金属层结构可由相同的膜层形成。
例如，如图2B所示，薄膜晶体管包括栅极211、源漏极212等结构，电容包括第一极213、第二极214以及第一极213和第二极214之间的第一绝缘层215。例如，栅极211或者源漏极212可以实现为具有第二金属层结构的第二金属图案。
例如，图2B中示出为源漏极212包括第二金属层结构。此时，第一阻隔墙23的第一金属层结构和源漏极212的第二金属层结构的结构相同，并且包括相同的材料，例如第一阻隔墙23的第一金属层结构和源漏极212的第二金属层结构同层形成且具有相同的多层结构，从而在显示基板200的制备过程中，第一阻隔墙23的第一金属层结构和源漏极212的第二金属层结构可以采用相同的膜层形成。例如，在一些示例中，第一金属层结构和第二金属层结构均具有双层结构或者三层结构等多层结构。
例如，在一个示例中，如图3A所示，第一阻隔墙23的第一金属层结构包括三层金属层结构，即在衬底基板201上形成依次叠层的第一子金属图案232、第二子金属图案233和第三子金属图案234。第一子金属图案232在衬底基板201上的正投影位于第二子金属图案233在衬底基板201上的正投影内，并且第一子金属图案232在衬底基板201上的正投影还位于第三子金属图案234在衬底基板201上的正投影内，由此在三者的叠层的侧面形成凹口231。
例如，在一个示例中，如图3B所示，第一阻隔墙23的第一金属层结构包括双层金属层结构，即在衬底基板201上形成依次叠层的第一子金属图案232和第二子金属图案233。第一子金属图案232在衬底基板201上的正投影位于第二子金属图案233在衬底基板201上的正投影内，由此在二者的叠层的侧面形成凹口231。
在上述情况下，在形成有第一阻隔墙23的衬底基板201上形成有机功能层以及第二电极204时，均可以使得有机功能层和第二电极204在第一阻隔墙23的凹口231处断开，从而断开水、氧等杂质进入显示区21内部的路线。
例如，图2B中示出的显示基板具有上述三层金属层结构的第一阻隔墙23，此时源漏极212所具有的第二金属层结构包括与第三子金属图案234同层的金属子层2123、与第一子金属图案232同层的金属子层2121和第二子金属图案233同层的金属子层2122。
例如，在第一阻隔墙23的第一金属层结构中，第一子金属图案232的厚度大于第二子金属图案233的厚度以及第三子金属图案234的厚度，从而更便于形成凹口231且更有利于使得有机功能层和第二电极204在第一阻隔墙23处断开，由此第一阻隔墙23可以实现更好的阻隔作用。
例如，本公开的一些实施例中，第一子金属图案232的材料和第二子金属图案233的材料在刻蚀时具有不同的刻蚀速率，在第一金属层结构具有第三子金属图案234的情况下，第三子金属图案234的材料和第二子金属图案233的材料可以相同。例如，在用于刻蚀形成第一金属层结构的刻蚀液的作用下，第一子金属图案232的材料被刻蚀的速度大于第二子金属图案233的材料被刻蚀的速度，从而在制备时容易形成具有凹口231的第一金属层结构。
例如，在一些实施例中，第一子金属图案232的材料包括铝或铜等金属 或其合金，第二子金属图案233的材料包括钛或钼等金属或其合金，第三子金属图案234的材料与第二子金属图案233的材料相同，包括钛或钼等金属或其合金。
例如，在一些示例中，当第一金属层结构采用双层结构时，第一子金属图案232和第二子金属图案233的材料组合可以为铝/钛、铝/钼、铜/钛或者铜/钼等。当第一金属层结构采用三层结构时，第三子金属图案234、第一子金属图案232和第二子金属图案233的材料组合可以为钛/铝/钛、钼/铝/钼、钛/铜/钛或者钼/铜/钼等。
需要注意的是，在本实施例的一些示例中，显示基板200还可以包括覆盖电容的第二绝缘层216、平坦化驱动电路的平坦层217、限定像素阵列的像素界定层219、形成封装空间的柱状隔垫物208、用于密封的封装层205以及进一步提高封装效果的第二封装层206以及第三封装层207等结构，本公开的实施例对此不再赘述。在该实施例的示例中，由于薄膜晶体管的源漏极212之一与第一电极218A连接，从而该薄膜晶体管可以为驱动晶体管，即根据所施加的数据信号的控制流过发光器件的发光电流的大小，从而控制像素单元在显示过程中的灰阶。
在本公开的一些实施例中，例如显示面板的开孔区2011周围还可以设置不止一个阻隔墙，即可以包括多层阻隔墙，例如并列设置两个、三个、四个、五个等，以增强阻隔效果。
例如，图4A和图4B示出的显示基板200包括两个阻隔墙，该显示基板与图3A和图3B示出的显示基板的不同在于，该显示基板除了第一阻隔墙23外，还包括第二阻隔墙24。第二阻隔墙24围绕开孔区222，且第二阻隔墙24设置在第一阻隔墙23的远离开孔区222的一侧，且间隔开一定距离。第二阻隔墙24也包括第一金属层结构，第二阻隔墙24的第一金属层结构的围绕开孔区222的至少一个侧面具有凹口241。由此，第一阻隔墙23和第二阻隔墙24在制备工艺中可以采用相同的膜层形成。图4A和图4B示出的显示基板200的其他结构可参照上述实施例，在此不再赘述。
本公开至少一实施例还提供一种显示基板的制备方法，该制备方法包括：形成显示区和非显示区，显示区至少部分围绕非显示区，非显示区包括开孔区，在显示区和开孔区之间形成第一阻隔墙，第一阻隔墙围绕开孔区且包括第一金属层结构，第一金属层结构的围绕开孔区的至少一个侧面形成有 凹口；在第一阻隔墙形成后，在显示区内以及第一阻隔墙上形成导电层图案。形成导电层图案包括：在显示区和第一阻隔墙上形成导电材料层，导电材料层在第一阻隔墙处断开，对导电材料层进行构图以形成导电层图案。
该制备方法通过在第一阻隔墙后再形成导电层图案，可以使得形成导电层图案的制备工艺，例如刻蚀工艺，不会进一步刻蚀第一阻隔墙，进而不会对显示基板的其他结构造成影响，以保证显示基板结构的完整性，进而提高显示基板的信赖性。
例如，在一些制备工艺中，若用于刻蚀形成导电层图案的刻蚀液还刻蚀第一阻隔墙的情况下，由于刻蚀液中含有一些金属离子，例如银离子，该金属离子可能与第一阻隔墙包括的金属材料(例如单质或合金)，例如铝等，发生置换反应而生成金属银，该金属银会以颗粒的形式存在于显示基板上，例如存在于导电层图案上，从而影响其后形成的功能层的完整性。例如，当在导电层图案后形成发光材料时，发光材料容易在金属银颗粒处断开，使得发光材料不连续，因此导致显示基板在显示时会形成暗点等不良。例如，图8A示出了一种显示基板中形成金属颗粒，例如银颗粒(图中圈出的部分)，的扫描电镜图，图8B为图8A所示的显示基板中金属颗粒上方的功能层的扫描电镜图，可见，当显示基板上由于上述原因形成金属颗粒后，该金属颗粒会严重影响之后形成的功能层的完整性，造成显示不良。本公开实施例提供的上述制备工艺可以避免造成这种不良影响，提高显示基板的显示质量和信赖性。
例如，在一些实施例中，制备方法还可以包括：在显示基板的位于开孔区的位置形成开孔。该开孔例如用于结合图像传感器和/或红外传感器等具有图像采集、人脸识别、红外感应等功能的器件。
例如，在一些实施例中，制备方法还可以包括：将图像传感器和/或红外传感器结合于开孔区。由此，图像传感器和/或红外传感器与显示区整合在一起，可提高显示区的占屏比。
下面，以形成图2A和图2B示出的显示基板200为例，对本公开实施例提供的显示基板的制备方法进行详细介绍。
如图5A所示，首先形成显示区21和非显示区22，非显示区22包括开孔区222。
如图6A-图6G所示，形成显示区21包括形成用于像素阵列的发光器件 以及驱动发光器件的驱动电路等结构。本公开的实施例对于像素阵列的发光器件以及驱动发光器件的驱动电路等的具体结构和制备方法不作限制。
例如，如图6A所示，首先在衬底基板201上形成驱动电路层，包括形成位于显示区21内的薄膜晶体管和存储电容等结构。例如，可以采用构图工艺依次在衬底基板201上形成薄膜晶体管和存储电容等结构的各功能膜层。例如，一次构图工艺包括光刻胶的形成、曝光、显影以及刻蚀等工艺。
例如，在一些实施例中，形成显示区21包括形成第二金属图案，例如形成显示区21内的薄膜晶体管包括形成第二金属图案，第二金属图案包括第二金属层结构，第一金属层结构和第二金属层结构采用相同的膜层形成，由此可简化制备工艺。例如，第一金属层结构和第二金属层结构可以为双层结构或者三层结构等，具体结构和材料可参见上述实施例，在此不再赘述。
例如，在一些实施例中，形成第一金属层结构包括：在衬底基板上形成第一金属材料图案，采用第一刻蚀液刻蚀第一金属材料图案以形成凹口。
例如，在第一金属层结构包括双层结构的情况下，形成第一金属材料图案包括：在衬底基板上形成依次叠层的第一子金属图案和第二子金属图案，此时，第一刻蚀液对第一子金属图案的刻蚀速度大于对第二子金属图案的刻蚀速度。
例如，在第一金属层结构包括三层结构的情况下，形成第一金属材料图案包括：在衬底基板上形成依次叠层的第三子金属图案、第一子金属图案和第二子金属图案，此时，第一刻蚀液对第一子金属图案的刻蚀速度大于对第二子金属图案和第三子金属图案的刻蚀速度。
例如，如图6A所示，薄膜晶体管的栅极211与存储电容的第一极213利用同一膜层、采用同一次构图工艺形成，以简化制备工艺。例如，栅极211与存储电容的第一极213包括铝、钛、钴等金属或者合金材料。在制备时，首先采用溅射或者蒸镀等方式形成一层栅极材料层，然后对栅极材料层进行构图工艺，以形成图案化的栅极211与存储电容的第一极213。
例如，薄膜晶体管的源漏极212可以形成为多层结构，例如图中示出为三层结构，此时，源漏极212实现为上述第二金属图案。
例如，可以采用溅射或者蒸镀等方式依次形成三层金属材料层，例如钛材料层、铝材料层以及钛材料层，然后采用同一次构图工艺对三个金属材料层进行构图，从而形成构成源漏极212的钛2121/铝2122/钛2123三层电极 结构，同时形成第一金属材料图案2310，即用于形成第一阻隔墙的初始第一阻隔墙，第一金属材料图案2310围绕开孔区。在图6A示出的示例中，第一金属材料图案2310包括在衬底基板201上依次叠层的第三子金属图案234、第一子金属图案232和第二子金属图案233。例如，上述构图工艺中所采用的刻蚀方法可以为干刻蚀，从而形成的源漏极212以及第一金属材料图案2310的侧面具有平齐的结构。
如图6B所示，在上述工艺后，形成平坦层217。例如，平坦层217可以采用树脂材料等有机材料或者氮化硅、氧化硅等无机材料通过构图工艺形成。例如，形成的平坦层217覆盖在源漏极212上，且平坦层217中具有暴露源漏极212的过孔，以便之后形成的第一电极218A通过该过孔与源漏极212连接。
例如，在平坦层217形成后，采用第一刻蚀液刻蚀第一金属材料图案2310以形成凹口231。例如，在第一金属层结构包括三层结构的情况下，第一刻蚀液对第一子金属图案232的刻蚀速度大于对第二子金属图案233和第三子金属图案231的刻蚀速度，由此可形成凹口231。并且，由于源漏极212被平坦层217覆盖，因此源漏极212不会被进一步刻蚀。
如图6C-6E所示，在第一阻隔墙23形成后，形成发光器件，发光器件包括第一电极、第二电极和第一电极和第二电极之间的有机功能层。例如，有机功能层可以包括发光材料层和辅助发光层。
例如，首先形成第一电极218A，第一电极218A实现为上述导电层图案。如图6C所示，形成第一电极218A包括：在显示区21和第一阻隔墙23上形成导电材料层2180，导电材料层2180在第一阻隔墙23处断开，然后对导电材料层2180进行构图以形成导电层图案，该导电层图案包括第一电极218A。
如图6D和6E所示，对导电材料层2180进行构图包括：在导电材料层2180上形成光刻胶图案，例如，光刻胶图案包括第一部分251和第二部分252，第一部分251用于形成显示区21内的第一电极218A，第二部分252覆盖第一阻隔墙23的至少一个侧面，以保护第一阻隔墙23不被刻蚀。之后，以光刻胶图案为掩膜刻蚀导电材料层2180以形成导电层图案218，导电层图案218包括第一电极218A，此时，导电层图案218还包括覆盖第一阻隔墙23且被第一阻隔墙23断开的部分材料2180。
例如，第一电极218A为阳极，此时，导电材料层2180的材料包括ITO、IZO等金属氧化物或者Ag、Al、Mo等金属或其合金。例如，第一电极218A通过平坦层217中的过孔与源漏极212连接。
在上述形成第一电极218A的刻蚀工艺中，所采用的刻蚀液不会刻蚀第一金属材料图案2310，由此可避免该刻蚀液与第一金属材料图案2310所包括的金属材料反应而生成金属颗粒，进而可避免该金属颗粒对其后形成的其他功能层的完整性造成影响，提高显示基板的信赖性。
如图6F所示，在导电层图案218形成后，形成像素界定层219，并且在像素界定层219的开口中形成有机功能层，包括发光材料层202以及辅助发光层203等。
例如，在第一电极218A上通过构图工艺形成暴露第一电极218A的像素界定层219。例如，像素界定层219的材料包括树脂材料等有机材料或者氮化硅、氧化硅等无机材料，且形成的像素界定层219中具有开口，以便之后形成发光器件的有机功能层和第二电极204。
例如，可以通过喷墨打印或者蒸镀等方式在像素界定层219的开口中形成发光材料层202。然后，如图13C所示，在形成有发光材料层202的像素界定层219上形成柱状隔垫物208、辅助发光层203以及第二电极204。
例如，柱状隔垫物208可以采用树脂材料等有机材料或者氮化硅、氧化硅等无机材料通过构图工艺形成，柱状隔垫物2026用于形成封装空间，以便于之后封装层的形成。
例如，辅助发光层203以及第二电极层204采用蒸镀、沉积或者喷墨打印等方式形成为一整面。发光材料层202包括可发红、绿、或蓝等颜色光的发光材料，辅助发光层203例如可以为电子注入层或者电子传输层等。第二电极204例如为阴极，第二电极204的材料例如包括Mg、Ca、Li或Al等金属或其合金，或者IZO、ZTO等金属氧化物，又或者PEDOT/PSS(聚3，4-乙烯二氧噻吩/聚苯乙烯磺酸盐)等具有导电性能有机材料。此时，形成为一整面的有机功能层以及第二电极204在第一阻隔墙23具有凹口231的侧面断开，图中第一阻隔墙23的两侧均具有凹口，因此有机功能层以及第二电极204在第一阻隔墙23的两侧被完全隔断。
由此，当有机功能层以及第二电极204在第一阻隔墙23的靠近开孔区的部分被污染时，由于第一阻隔墙23的阻隔作用，水、氧等杂质不会扩散、 延伸至有机功能层以及第二电极204的用于发光的部分。
例如，在发光器件制备完成后，可以采用化学气相沉积、物理气相沉积、涂覆等方式在第二电极204上形成封装层205。封装层205可以对位于显示区的功能结构提供封装与保护。例如，在封装层205上还可以形成第二封装层206和第三封装层207。第二封装层206可以对封装层205进行平坦化，第三封装层207可以形成外层封装。例如，封装层205以及第三封装层207采用无机材料，该无机材料例如包括氮化硅、氧化硅、氮氧化硅等，第二封装层206采用有机材料，该有机材料例如包括聚酰亚胺(PI)、环氧树脂等。由此，封装层205、第二封装层206和第三封装层207形成为复合封装层，该复合封装层对显示区的功能结构形成多重保护，具有更好的封装效果。
本公开的一些实施例中，根据需要，显示区201中还可以形成其他必要的功能膜层，这些膜层可采用常规方法形成，在此不再赘述。
例如，在显示区形成完成后，如图5B所示，在开孔区222中形成开孔221。例如，采用激光切割或者机械冲压的方式对显示基板200进行开孔以形成开孔221。
例如，开孔221贯穿衬底基板201和其上的功能层，因此衬底基板201上也形成有开孔。该开孔位置可以安装图像传感器、红外传感器等结构，并与例如中央处理器等信号连接。例如，该图像传感器或者红外传感器等结构可以设置在衬底基板201的远离发光结构的一侧(即显示基板的非显示侧)，并可通过开孔221实现拍照、面部识别、红外感应等多种功能。
需要注意的是，在本公开的实施例中，所示出的薄膜晶体管为顶栅型，但是本公开的实施例对此不作限定，例如该薄膜晶体管也可以为底栅型。例如，驱动电路可以包括多个薄膜晶体管，这些薄膜晶体管可以为顶栅型或底栅型，可以为N型或P型，本公开的实施例对此不作限定。
在本公开的一些实施例中，发光器件为有机发光二极管或量子点发光二极管，例如该有机发光二极管可以为顶栅发射型、底发射型或双面发射型，并且有机发光二极管的有机功能层可以为复合层，该复合层包括有机发光材料层以及电子注入层、电子传输层、空穴传输层、空穴注入层等其他辅助发光层。本公开的实施例对于有机发光二极管的具体结构、类型不作限定。
例如，本公开的一些实施例的制备方法还可以形成如图4A和4B所示的显示基板，与上述是示例不同的是，在形成如图4A和4B所示的显示基 板时，显示基板的显示区和开孔区之间还形成第二阻隔墙，该第二阻隔墙围绕开孔区，并且形成在第一阻隔墙的远离开孔区的一侧，此时，第二阻隔墙可以与第一阻隔墙采用相同的膜层形成，从而在不增加工艺步骤的基础上，形成的多层阻隔墙可以起到更好的阻隔作用。
例如，在本公开的另一些实施例中，还可以采用其他方式形成第一阻隔墙的第一金属层结构。例如，形成第一金属层结构包括：形成第一金属材料图案，第一金属材料图案的形成方式可以参见上述实施例中图6A中形成的第一金属材料图案2310。在第一金属材料图案2310形成后，如图7A和图7B所示，在显示区中以及第一金属材料图案2310上形成绝缘材料层2170，然后采用第二刻蚀液对绝缘材料层2170进行构图，以形成图案化的绝缘层217。
例如，该第二刻蚀液还可以刻蚀第一金属材料图案2310，从而形成凹口231。由此，绝缘层217和第一阻隔墙23可以采用同一刻蚀液形成，从而可以简化显示基板的制备工艺。
例如，当第一金属层结构包括双层结构的情况下，形成第一金属材料图案包括在衬底基板上形成依次叠层的第一子金属图案和第二子金属图案，参照图3B，此时，第二刻蚀液对第一子金属图案232的刻蚀速度大于对第二子金属图案233的刻蚀速度，由此便于形成凹口231。
例如，当第一金属层结构包括三层结构的情况下，形成第一金属材料图案包括在衬底基板上形成依次叠层的第三子金属图案、第一子金属图案和第二子金属图案，参照图3A，此时，第二刻蚀液对第一子金属图案232的刻蚀速度大于对第二子金属图案233和第三子金属图案234的刻蚀速度。
例如，在一些示例中，绝缘材料层包括光刻胶材料，例如聚酰亚胺等光刻胶材料，此时，第二刻蚀液可以为该光刻胶材料的显影液。该显影液不但用于将已经曝光的光刻胶材料(即光刻胶层)显影以得到光刻胶图案，该显影液还对第一金属材料图案2310具有刻蚀效果，例如对不同的子金属图案具有不同的刻蚀速率，以便于形成第一金属层结构的凹口231。所得到的光刻胶图案例如还可以用于后续的构图工艺等。
例如，该显影液包括可同时对绝缘材料层的光刻胶材料和第一金属材料图案2310具有上述刻蚀效果的试剂，例如包括四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵、烷基醇胺、氢氧化钠、氢氧化钾、碳酸钠、磷酸 钠、磷酸二氢钠或者醋酸钠等试剂。例如，这些试剂对第一金属材料图案2310中不同的子金属图案具有不同的刻蚀速率，例如对第一子金属图案232的刻蚀速率大于对第二子金属图案233和第三子金属图案234的刻蚀速率，以便于形成第一金属层结构的凹口231。例如，显影液除了包括上述试剂外，还包括其他一些溶剂或者助剂，例如水和表面活性剂等，本公开的实施例对此不做限定。
例如，在一些示例中，当显影液包括四甲基氢氧化铵时，显影液中四甲基氢氧化铵的浓度为2-8％，显影液刻蚀第一金属材料图案2310以形成凹口231的时间为60秒(s)-200秒(s)。此时，凹口的形成深度，即凹口231在沿平行于衬底基板201的方向深入第一金属层结构的侧面的距离，例如为0.6μm-1μm。由此，第一阻隔墙的第一金属层结构可充分实现阻隔效果。
例如，在一些示例中，当甲基氢氧化铵的浓度为2.5％时，显影液刻蚀第一金属材料图案2310以形成凹口231的时间为180s；当甲基氢氧化铵的浓度为7％时，显影液刻蚀第一金属材料图案2310以形成凹口231的时间为60s；当甲基氢氧化铵的浓度为5％时，显影液刻蚀第一金属材料图案2310以形成凹口231的时间为120s等。甲基氢氧化铵的浓度以及显影液刻蚀第一金属材料图案2310以形成凹口231的时间可根据具体需求以及实际情况进行调整，本公开的实施例对此不做限定。
例如，在第一阻隔墙23的第一金属层结构形成后，可参照上述实施例中图6C-图6G的相关步骤继续形成显示基板的其他结构，在此不再赘述。
在上述形成第一阻隔墙的第一金属层结构的方法中，绝缘层217和第一阻隔墙23采用同一刻蚀液形成，因此可以简化显示基板的制备工艺；另外，上述方法同样可以在第一阻隔墙后形成导电层图案，可以使得形成导电层图案的制备工艺，例如刻蚀工艺，不会进一步刻蚀第一阻隔墙，进而不会对显示基板的其他结构造成影响，以保证显示基板结构的完整性，进而提高显示基板的显示质量和信赖性。
本公开至少一实施例还提供了一种显示装置，该显示装置包括利用本公开实施例提供的制备方法得到的显示基板或者包括本公开实施例提供的显示基板。例如，该显示装置可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件，本公开的实施例对此不做限定。
还有以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”或者可以存在中间元件。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以权利要求的保护范围为准。

Claims (24)

  1. 一种显示基板的制备方法，包括：
    形成显示区和非显示区，所述显示区至少部分围绕所述非显示区，所述非显示区包括开孔区，
    在所述显示区和所述开孔区之间形成第一阻隔墙，其中，所述第一阻隔墙围绕所述开孔区且包括第一金属层结构，所述第一金属层结构的围绕所述开孔区的至少一个侧面形成有凹口，
    在所述第一阻隔墙形成后，在所述显示区内以及所述第一阻隔墙上形成导电层图案，其中，形成所述导电层图案包括：
    在所述显示区和所述第一阻隔墙上形成导电材料层，所述导电材料层在所述第一阻隔墙处断开，
    对所述导电材料层进行构图以形成所述导电层图案。
  2. 根据权利要求1所述的显示基板的制备方法，还包括：
    在所述显示基板的位于所述开孔区的位置形成开孔；以及
    将图像传感器和/或红外传感器结合于所述开孔区。
  3. 根据权利要求1或2所述的显示基板的制备方法，其中，对所述导电材料层进行构图包括：
    在所述导电材料层上形成光刻胶图案，其中，所述光刻胶图案覆盖所述第一阻隔墙的所述至少一个侧面，
    以所述光刻胶图案为掩膜刻蚀所述导电材料层以形成所述导电层图案。
  4. 根据权利要求3所述的显示基板的制备方法，还包括：
    在所述显示区内形成发光器件，
    其中，所述发光器件包括第一电极、第二电极和所述第一电极和所述第二电极之间的有机功能层，所述导电层图案包括所述第一电极。
  5. 根据权利要求4所述的显示基板的制备方法，其中，所述有机功能层在所述第一阻隔墙处断开，
    所述第一电极为阳极，所述第二电极为阴极，所述阴极也在所述第一阻隔墙处断开。
  6. 根据权利要求1或2所述的显示基板的制备方法，还包括：
    在所述显示区内形成第二金属图案，
    其中，所述第二金属图案包括第二金属层结构，所述第一金属层结构和所述第二金属层结构采用相同的膜层形成。
  7. 根据权利要求1或2所述的显示基板的制备方法，其中，形成所述第一金属层结构包括：
    在衬底基板上形成第一金属材料图案，
    采用第一刻蚀液刻蚀所述第一金属材料图案以形成所述凹口。
  8. 根据权利要求7所述的显示基板的制备方法，其中，形成所述第一金属材料图案包括：
    在所述衬底基板上形成依次叠层的第一子金属图案和第二子金属图案，
    其中，所述第一刻蚀液对所述第一子金属图案的刻蚀速度大于对所述第二子金属图案的刻蚀速度。
  9. 根据权利要求7所述的显示基板的制备方法，其中，形成所述第一金属材料图案包括：
    在所述衬底基板上形成依次叠层的第三子金属图案、第一子金属图案和第二子金属图案，
    其中，所述第一刻蚀液对所述第一子金属图案的刻蚀速度大于对所述第二子金属图案和所述第三子金属图案的刻蚀速度。
  10. 根据权利要求1或2所述的显示基板的制备方法，其中，形成所述第一金属层结构包括：
    形成第一金属材料图案，
    在所述显示区中以及所述第一金属材料图案上形成绝缘材料层，
    采用第二刻蚀液对所述绝缘材料层进行构图，以形成图案化的绝缘层。
  11. 根据权利要求10所述的显示基板的制备方法，其中，所述第二刻蚀液还刻蚀所述第一金属材料图案以形成所述凹口。
  12. 根据权利要求11所述的显示基板的制备方法，其中，所述绝缘材料层包括光刻胶材料，所述第二刻蚀液为所述光刻胶材料的显影液。
  13. 根据权利要求12所述的显示基板的制备方法，其中，所述显影液包括四甲基氢氧化铵、四乙基氢氧化铵、四丙基氢氧化铵、烷基醇胺、氢氧化钠、氢氧化钾、碳酸钠、磷酸钠、磷酸二氢钠或者醋酸钠。
  14. 根据权利要求13所述的显示基板的制备方法，其中，当所述显影液包括四甲基氢氧化铵时，所述显影液中所述四甲基氢氧化铵的浓度为 2-8％，
    所述显影液刻蚀所述第一金属材料图案以形成所述凹口的时间为60s-200s。
  15. 根据权利要求11所述的显示基板的制备方法，其中，形成所述第一金属材料图案包括：
    在所述衬底基板上形成依次叠层的第一子金属图案和第二子金属图案，
    其中，所述第二刻蚀液对所述第一子金属图案的刻蚀速度大于对所述第二子金属图案的刻蚀速度。
  16. 根据权利要求11所述的显示基板的制备方法，其中，形成所述第一金属材料图案包括：
    在所述衬底基板上形成依次叠层的第三子金属图案、第一子金属图案和第二子金属图案，
    其中，所述第二刻蚀液对所述第一子金属图案的刻蚀速度大于对所述第二子金属图案和所述第三子金属图案的刻蚀速度。
  17. 根据权利要求8或15所述的显示基板的制备方法，其中，所述第一子金属图案的材料包括铝或铜，所述第二子金属图案的材料包括钛或钼。
  18. 根据权利要求9或16所述的显示基板的制备方法，其中，所述第一子金属图案的材料包括铝或铜，所述第二子金属图案的材料包括钛或钼，所述第三子金属图案的材料包括钛或钼。
  19. 根据权利要求1或2所述的显示基板的制备方法，还包括：在所述显示区和所述非显示区之间还形成第二阻隔墙，
    其中，所述第二阻隔墙围绕所述非显示区，并且形成在所述第一阻隔墙的远离所述非显示区的一侧，所述第二阻隔墙与所述第一阻隔墙采用相同的膜层形成。
  20. 一种显示基板，包括：
    显示区和非显示区，所述显示区至少部分围绕所述非显示区，所述非显示区包括开孔区，
    第一阻隔墙，在所述显示区和所述开孔区之间，其中，所述第一阻隔墙围绕所述开孔区，且包括第一金属层结构，所述第一金属层结构的围绕所述开孔区的至少一个侧面形成有凹口，
    所述显示区包括导电层图案，其中，所述导电层图案还延伸至所述第一 阻隔墙上，且在所述第一阻隔墙的所述至少一个侧面处断开。
  21. 根据权利要求20所述的显示基板，还包括位于所述开孔区的开孔以及结合于所述开孔区的图像传感器和/或红外传感器。
  22. 根据权利要求20或21所述的显示基板，还包括在所述显示区内的发光器件，所述发光器件包括第一电极、第二电极和所述第一电极和所述第二电极之间的有机功能层，
    所述导电层图案包括所述第一电极。
  23. 根据权利要求22所述的显示基板，其中，所述有机功能层在所述第一阻隔墙处断开，
    所述第一电极为阳极，所述第二电极为阴极，所述阴极也在所述第一阻隔墙处断开。
  24. 一种显示装置，包括权利要求1-19任一所述的制备方法形成的显示基板，或者包括权利要求20-23任一所述的显示基板。
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CN110164916A (zh) * 2018-12-05 2019-08-23 京东方科技集团股份有限公司 显示面板、显示设备及制造显示面板的方法
CN109742121A (zh) * 2019-01-10 2019-05-10 京东方科技集团股份有限公司 一种柔性基板及其制备方法、显示装置
CN109904208A (zh) * 2019-03-19 2019-06-18 京东方科技集团股份有限公司 有机发光显示器及其制备方法、显示装置
CN109935621A (zh) * 2019-03-29 2019-06-25 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置

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WO2023245339A1 (zh) * 2022-06-20 2023-12-28 京东方科技集团股份有限公司 一种显示面板及其制作方法、显示装置

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