WO2021004521A1 - 一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站 - Google Patents

一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站 Download PDF

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WO2021004521A1
WO2021004521A1 PCT/CN2020/101252 CN2020101252W WO2021004521A1 WO 2021004521 A1 WO2021004521 A1 WO 2021004521A1 CN 2020101252 W CN2020101252 W CN 2020101252W WO 2021004521 A1 WO2021004521 A1 WO 2021004521A1
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hydrogen passivation
battery
heterojunction
light source
heterojunction battery
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PCT/CN2020/101252
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English (en)
French (fr)
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周剑
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苏州迈正科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of cell manufacturing, in particular to a hydrogen passivation method, a hydrogen passivation device, a battery, a battery component and a solar power supply station for a heterojunction battery.
  • Heterojunction solar cells have attracted the attention of domestic and foreign researchers due to their low process temperature, high conversion efficiency, good battery stability and low temperature coefficient.
  • there are a large number of interface state defects on the surface of the silicon wafer which are mainly caused by a large number of dangling bond defects on the surface of the silicon wafer, which are effective photo-generated carrier recombination centers.
  • Both experimental and theoretical results show that when the interface state defect density is too large, the open circuit voltage, fill factor and conversion efficiency of the battery will drop sharply.
  • the dangling bond defects on the surface of the silicon wafer can be effectively passivated, thereby greatly reducing the recombination rate of minority carriers at the heterojunction interface, and making The open circuit voltage of the mass-junction battery reaches more than 700mV, and the battery efficiency is greatly improved.
  • the hydrogen passivation process in the prior art generally uses a separate heating device to heat the silicon cell, and then a separate light source is used to irradiate the silicon cell to improve the photoelectric conversion efficiency of the silicon cell, which requires a separate area to perform Heating, this will complicate the structure of the hydrogen passivation equipment, and the heat transfer method is thermal conduction or thermal convection, the heat transfer speed is slow, the thermal inertia is small, and the problem of reaching thermal equilibrium with the measured object must be considered.
  • the purpose of the present invention is to provide an improved hydrogen passivation method for heterojunction batteries in view of the problems in the prior art.
  • a method for hydrogen passivation of a heterojunction battery comprising irradiating a heterojunction battery with a light source, and heating the heterojunction battery to a temperature between 20°C and 400°C by means of thermal radiation while irradiating the light source
  • the light intensity of the light source is 1 to 160 solar intensities.
  • part or all of the spectrum wavelength of the light source falls within the region of 100nm-1100nm.
  • the time for heating the heterojunction battery by the light source is 3 to 500 s.
  • the light source is an LED light source.
  • the LED light source is provided with one or more.
  • the illumination range of the light source covers the entire surface area of the heterojunction battery.
  • the method further includes cooling the heterojunction battery after heating.
  • the heterojunction battery is cooled by a cooling medium.
  • the illumination intensity of the light source applied to the heterojunction cell can be adjusted.
  • the heterojunction cell includes a central crystalline silicon layer, two hydrogenated amorphous silicon deposition layers located above and below the central crystalline silicon layer, and hydrogenated amorphous silicon deposition layers located above and below the central crystalline silicon layer.
  • the present invention also provides a hydrogen passivation device for a heterojunction battery, which performs a hydrogen passivation treatment on the heterojunction battery according to the hydrogen passivation method described in any one of the above.
  • the present invention also provides a battery, which adopts the hydrogen passivation method as described in any one of the above for hydrogen passivation treatment.
  • the present invention also provides a battery assembly, which includes a plurality of batteries connected in series, and the batteries are subjected to hydrogen passivation treatment using the hydrogen passivation method as described in any one of the above.
  • the present invention also provides a solar power supply station, including a plurality of battery components, and the battery components are subjected to a hydrogen passivation treatment using the hydrogen passivation method as described in any one of the above.
  • the present invention has the following advantages compared with the prior art: the hydrogen passivation method of the heterojunction battery of the present invention is used to perform hydrogen passivation on the heterojunction battery through the method of providing irradiation and heating at the same time by the light source, so that The structure of the hydrogen passivation equipment is simple, and the heat transfer method is thermal radiation.
  • the thermal radiation heat transfer speed is fast, the thermal inertia is small, and there is no problem of reaching thermal equilibrium with the measured object.
  • Heterojunction battery HIT is a heterojunction with intrinsic thin layer. It is a hybrid solar cell made of crystalline silicon substrate and amorphous silicon film. It has the characteristics of low process temperature, high conversion efficiency, and good high temperature characteristics. , Is a low-cost high-efficiency battery.
  • the hydrogen passivation method of the heterojunction battery of the present invention is as follows:
  • a light source is used to illuminate the heterojunction cell, and the light source illuminates the heterojunction cell while heating the heterojunction cell by means of thermal radiation.
  • Illumination can generate charge carriers, which can not only change the concentration of minority carriers, but also move the electron quasi-Fermi to the upper half of the band gap, which can increase the concentration of equilibrium H0, thereby improving the passivation effect.
  • the light source used for irradiation in the hydrogen passivation process needs to meet the light intensity of the light source in the range of 1 to 160 solar intensities, one solar intensities of 1000w/m 2 , and part or all of the spectrum wavelength of the light source falls within In the region of 100nm-1100nm, the light source can provide stable irradiation and radiant heat to passivate the heterojunction cell, so that hydrogen atoms can diffuse into the silicon crystal, thereby better passivating the silicon dangling bonds on the interface to reduce The surface recombination rate of silicon crystals.
  • the irradiation time of the light source is related to the light intensity of the light source.
  • the irradiation time is generally 3 ⁇ 500s.
  • the light source of the present invention can be an LED light source, one or more LED light sources can be provided, and the illumination range of the light source needs to cover the entire surface area of the heterojunction battery.
  • the multiple LED light sources are arranged in a matrix.
  • the illumination intensity of the light source applied to the heterojunction cell can be adjusted, such as changing the illumination angle of the light source, changing the number of irradiated light sources, etc., so that the heating temperature of the heterojunction cell can be adjusted.
  • the temperature of the semi-finished heterojunction battery can be increased by heating, thereby increasing the diffusion of hydrogen atoms to improve the passivation effect.
  • the heating temperature for heating the heterojunction battery by the light source during the hydrogen passivation process is 20-400°C.
  • the passivation parameters for the best hydrogen passivation effect on the semi-finished heterojunction battery are: the heating temperature is 240°C, the light source intensity is 80 sunlight, the irradiation time is 150s; or the heating temperature is 280 °C, the light intensity of the light source is 80 sunlight, and the irradiation time is 30s.
  • the hydrogen passivation method of the heterojunction battery of the present invention further includes a process step of cooling the heterojunction battery after heating.
  • the heterojunction battery needs to be cooled by a cooling medium.
  • the cooling medium can be cold air, cold air or nitrogen and other low-temperature gases, and the cooling medium can be used to cool the heterojunction battery in a reciprocating circulation environment, which can accelerate the cooling process.
  • the heterojunction cell includes a central crystalline silicon layer, two hydrogenated amorphous silicon deposition layers respectively located above and below the central crystalline silicon layer, and anti-corrosion resistors on the hydrogenated amorphous silicon deposition layers located above and below the central crystalline silicon layer.
  • the reflective layer by providing an anti-reflection layer, can promote the penetration of photons into the heterojunction cell under the light source.
  • the above-mentioned heterojunction battery includes both the finished heterojunction battery and the semi-finished product of the heterojunction battery. That is, the hydrogen passivation method can be used to hydrogen passivate the heterojunction battery after the preparation of the heterojunction battery is completed. The hydrogen passivation method can be used to hydrogen passivate the heterojunction battery during the preparation process of the heterojunction battery.
  • the present invention also provides a hydrogen passivation device. During or after the preparation of the heterojunction battery, the hydrogen passivation device is used to perform hydrogen passivation treatment according to the hydrogen passivation method.
  • the present invention also provides a battery which is subjected to hydrogen passivation treatment according to the above-mentioned hydrogen passivation method.
  • the present invention also provides a battery assembly, which includes a plurality of batteries connected in series, and the batteries are subjected to hydrogen passivation treatment according to the above-mentioned hydrogen passivation method.
  • the present invention also provides a solar power supply station, including a plurality of battery components, and the battery components are subjected to hydrogen passivation treatment according to the above-mentioned hydrogen passivation method.

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  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本发明公开了一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站，所述方法包括使用光源照射异质结电池，所述光源照射的同时通过热辐射的方式将所述异质结电池加热至20℃至300℃之间，所述光源的光强为1～160个太阳光强。本发明的异质结电池氢钝化方法通过光源提供照射同时加热的方法对异质结电池进行氢钝化，使得氢钝化设备的结构简单，且传热的方式为热辐射，热辐射传热速度快，热惯性小且不存在与被测对象达到热平衡的问题。

Description

一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站 技术领域
本发明涉及电池片制造技术领域，具体涉及一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站。
背景技术
异质结太阳电池因具有工艺温度低、转换效率高、电池稳定性好及温度系数低等特点而备受国内外研究人员关注。一般情况下，硅片表面存在有大量的界面态缺陷，这主要是由硅片表面的大量悬挂键缺陷引起的，是有效的光生载流子复合中心。实验和理论结果都表明，当界面态缺陷密度太大时，电池的开路电压、填充因子和转换效率就会急剧下降。而借助a-Si:H(i)薄膜优异的钝化能力，可对硅片表面的悬挂键缺陷进行有效钝化，从而大大降低少数载流子在异质结界面的复合速率，可使异质结电池的开路电压达到700mV以上，电池效率得到大幅提升。现有技术中的氢钝化工艺一般都是通过单独的加热装置对硅电池进行加热，再通过单独的光源为硅电池提供照射来提升硅电池的光电转化效率，其需要提供一个单独的区域进行加热，这样会使得氢钝化设备的结构变得复杂，而且传热的方式为热传导或热对流，其传热速度慢，热惯性小且要考虑与被测对象达到热平衡的问题。
发明内容
本发明的目的是针对现有技术中的问题，提供一种改进的异质结电池氢钝化方法。
为达到上述目的，本发明采用的技术方案是：
一种异质结电池氢钝化方法，所述方法包括使用光源照射异质结电池，所述光源照射的同时通过热辐射的方式将所述异质结电池加热至20℃至400℃之间，所述光源的光强为1～160个太阳光强。
优选地，所述光源的光谱有部分或全部光谱波长落在100nm-1100nm区域内。
优选地，通过所述光源加热所述异质结电池的时间为3～500s。
优选地，所述光源为LED光源。
进一步地，所述LED光源设置有一个或多个。
优选地，所述光源的照射范围覆盖所述异质结电池的全部表面积。
优选地，所述方法还包括对所述异质结电池加热后进行冷却。
进一步地，通过冷却介质对所述异质结电池进行冷却。
优选地，所述光源施加于所述异质结电池的照射强度能够调节。
优选地，所述异质结电池包括一中央晶体硅层、分别位于所述中央晶体硅层的上方和下方的两层氢化非晶体硅沉积层、分别设置在上方和下方的氢化非晶体硅沉积层上的抗反射层。
本发明还提供一种异质结电池氢钝化装置，所述氢钝化装置按照如上述任一项所述的氢钝化方法对所述异质结电池进行氢钝化处理。
本发明还提供一种电池，该电池采用如上述任一项所述的氢钝化方法进行氢钝化处理。
本发明还提供一种电池组件，电池组件包括多个互相串联的电池，所述电池采用如上述任一项所述的氢钝化方法进行氢钝化处理。
本发明还提供一种太阳能供电站，包括多个电池组件，所述电池组件采用如上述任一项所述的氢钝化方法进行氢钝化处理。
由于上述技术方案的运用，本发明与现有技术相比具有下列优点：采用本发明的异质结电池氢钝化方法通过光源提供照射同时加热的方法对异质结电池进行氢钝化，使得氢钝化设备的结构简单，且传热的方式为热辐射，热辐射传热速度快，热惯性小且不存在与被测对象达到热平衡的问题。
具体实施方式
下面对本发明的技术方案作进一步的阐述。
异质结电池HIT即带本征薄层异质结，是一种利用晶体硅基板和非晶硅薄膜制成的混合型太阳能电池，它具有工艺温度低、转换效率高、高温特性好等特点，是一种低价高效电池。
本发明的异质结电池的氢钝化方法如下：
使用光源照射异质结电池，光源照射异质结电池的同时通过热辐射的方式将异质结电池加热。
光照可产生电荷载流子，这不仅可以改变少数载流子浓度，还可以将电子准费米移动到上半部的带隙中，这可增加平衡H0的浓度，从而提高钝化效果。氢钝化处理过程中用于照射的光源需要满足光源的光强在1～160个太阳光强范围内，1个太阳光强为1000w/m 2，光源的光谱有部分或全部光谱波长落在100nm-1100nm区域内，该光源便可提供稳定的照射及辐射热来钝化异质结电池，使得氢原子能够扩散到硅晶体内部，从而更好地钝化界面上的硅悬挂键，以降低硅晶体的表面复合速率。
光源照射时间与光源的光强有关，当光强在1～160个太阳光强范围内时，光强越高，需要的照射的时间越短，光强越低，所需的照射的时间越长，照射时间一般为3～500s。
本发明的光源可采用LED光源，LED光源可设置有一个或多个，光源的照射范围需要覆盖异质结电池的全部表面积。当LED光源有多个时，多个LED光源呈矩阵形式排布。
光源施加于异质结电池的照射强度可以调节，如改变光源的照射角度、改变照射的光源的数量等，从而可调节异质结电池的加热温度。
氢钝化处理时通过加热可提高异质结电池半成品的温度，从而可增加氢原子的扩散，以提高钝化效果。考虑到异质结电池的特性，加热温度过高会破坏异质结电池的结构，因此氢钝化处理过程中通过光源加热异质结电池的加热温度为20～400℃。
通过试验测试，对异质结电池半成品进行氢钝化效果最优时的钝化参数为：加热温度为240℃、光源光强为80个太阳光强，照射时间为150s；或者加热温度为280℃、光源光强为80个太阳光强，照射时间为30s。
本发明的异质结电池的氢钝化方法还包括对异质结电池加热后进行冷却的工艺步骤。为加快冷却时间，冷却时，需要通过冷却介质对异质结电池进行冷却。冷却介质可采用冷风、冷空气或者氮气等低温气体，并使冷却介质在往复循环流动的环境下对异质结电池进行制冷，可加速冷却过程。
当异质结电池被加热的温度超过300℃后，也需要对异质结电池进行冷却处理，以防止异质结电池发生破坏。
具体的，异质结电池包括一中央晶体硅层、分别位于中央晶体硅层的上方和下方的两层氢化非晶体硅沉积层、分别设置在上方和下方的氢化非晶体硅沉积层上的抗反射层，通过设置抗反射层，可促进光源照射时光子能够渗透到异质结电池中。
上述的异质结电池既包括异质结电池成品，也包括异质结电池半成品，即既可以在异质结电池制备完成后使用该氢钝化方法对异质结电池进行氢钝化，也可以在异质结电池制备过程中使用该氢钝化方法对异质结电池进行氢钝化。
本发明还提供一种氢钝化装置，异质结电池制备过程中或者制备完成后，采用该氢钝化装置按照上述氢钝化方法进行氢钝化处理。
本发明还提供一种电池，该电池按照上述的氢钝化方法进行氢钝化处理。
本发明还提供一种电池组件，电池组件包括多个互相串联的电池，电池按照上述的氢钝化方法进行氢钝化处理。
本发明还提供一种太阳能供电站，包括多个电池组件，电池组件按照上述的氢钝化方法进行氢钝化处理。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并加以实施，并不能以此限制本发明的保护范围，凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围内。

Claims (14)

  1. 一种异质结电池氢钝化方法，其特征在于：所述方法包括使用光源照射异质结电池，所述光源照射的同时通过热辐射的方式将所述异质结电池加热至20℃至400℃之间，所述光源的光强为1～160个太阳光强。
  2. 根据权利要求1所述的异质结电池氢钝化方法，其特征在于：所述光源的光谱有部分或全部光谱波长落在100nm-1100nm区域内。
  3. 根据权利要求1所述的异质结电池氢钝化方法，其特征在于：通过所述光源加热所述异质结电池的时间为3～500s。
  4. 根据权利要求1所述的异质结电池氢钝化方法，其特征在于：所述光源为LED光源。
  5. 根据权利要求4所述的异质结电池氢钝化方法，其特征在于：所述LED光源设置有一个或多个。
  6. 根据权利要求1所述的异质结电池氢钝化方法，其特征在于：所述光源的照射范围覆盖所述异质结电池的全部表面积。
  7. 根据权利要求1所述的异质结电池氢钝化方法，其特征在于：所述方法还包括对所述异质结电池加热后进行冷却。
  8. 根据权利要求7所述的异质结电池氢钝化方法，其特征在于：通过冷却介质对所述异质结电池进行冷却。
  9. 根据权利要求1所述的异质结电池氢钝化方法，其特征在于：所述光源施加于所述异质结电池的照射强度能够调节。
  10. 根据权利要求1所述的异质结电池氢钝化方法，其特征在于：所述异质结电池包括一中央晶体硅层、分别位于所述中央晶体硅层的上方和下方的两层氢化非晶体硅沉积层、分别设置在上方和下方的氢化非晶体硅沉积层上的抗反射层。
  11. 一种异质结电池氢钝化装置，其特征在于：所述氢钝化装置按照权利要求1～10中任一项所述的氢钝化方法对所述异质结电池进行氢钝化处理。
  12. 一种电池，其特征在于：采用如权利要求1～10中任一项所述的氢钝化方法进行氢钝化处理。
  13. 一种电池组件，其特征在于：包括多个互相串联的电池，所述电池采用如权利要求1～10中任一项所述的氢钝化方法进行氢钝化处理。
  14. 一种太阳能供电站，其特征在于：包括多个电池组件，所述电池组件采用如权利要求1～10中任一项所述的氢钝化方法进行氢钝化处理。
PCT/CN2020/101252 2019-07-11 2020-07-10 一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站 WO2021004521A1 (zh)

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Publication number Priority date Publication date Assignee Title
TW202023063A (zh) 2018-10-24 2020-06-16 澳洲商新南創新私人有限公司 改良異質接面太陽能電池的效能的方法
CN110416357A (zh) * 2019-07-11 2019-11-05 苏州迈正科技有限公司 一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站
CN111063769A (zh) * 2019-11-12 2020-04-24 晋能光伏技术有限责任公司 一种适用于异质结太阳能电池的光注入工艺
CN111564532B (zh) * 2020-04-03 2023-02-17 江西昌大高新能源材料技术有限公司 一种hac太阳电池后处理增效设备及方法
CN112687763B (zh) * 2020-12-28 2022-12-09 天合光能股份有限公司 一种钝化接触晶体硅电池制备方法
CN112768564B (zh) * 2021-01-20 2022-08-30 东方日升（常州）新能源有限公司 Topcon电池的光注入钝化方法
CN113130712A (zh) * 2021-04-15 2021-07-16 天合光能股份有限公司 一种太阳能电池及其制备方法
CN113937185A (zh) * 2021-09-26 2022-01-14 福建新峰二维材料科技有限公司 一种采用氢钝化的异质结太阳电池的制造方法
FR3136892A1 (fr) * 2022-06-20 2023-12-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de traitement d’un module photovoltaïque par immersion de lumière

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105449044A (zh) * 2015-12-30 2016-03-30 江南大学 Led硅太阳电池光诱导氢钝化与缺陷修复装置
JP2016051892A (ja) * 2014-08-28 2016-04-11 小林　光 半導体基板、太陽電池、太陽電池の製造方法及びその製造装置
CN107546296A (zh) * 2016-06-24 2018-01-05 科峤工业股份有限公司 太阳能电池片的氢钝化处理方法及其处理装置
CN110416357A (zh) * 2019-07-11 2019-11-05 苏州迈正科技有限公司 一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011002086A1 (ja) * 2009-07-03 2011-01-06 株式会社カネカ 結晶シリコン系太陽電池およびその製造方法
WO2012002440A1 (ja) * 2010-06-29 2012-01-05 京セラ株式会社 半導体基板の表面処理方法、半導体基板、および太陽電池の製造方法
WO2013173867A1 (en) * 2012-05-21 2013-11-28 Newsouth Innovations Pty Limited Advanced hydrogenation of silicon solar cells
CN107068799B (zh) * 2017-04-21 2018-11-02 江苏天雄电气自动化有限公司 一种光伏电站集成控制系统

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016051892A (ja) * 2014-08-28 2016-04-11 小林　光 半導体基板、太陽電池、太陽電池の製造方法及びその製造装置
CN105449044A (zh) * 2015-12-30 2016-03-30 江南大学 Led硅太阳电池光诱导氢钝化与缺陷修复装置
CN107546296A (zh) * 2016-06-24 2018-01-05 科峤工业股份有限公司 太阳能电池片的氢钝化处理方法及其处理装置
CN110416357A (zh) * 2019-07-11 2019-11-05 苏州迈正科技有限公司 一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站

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