WO2021000733A1 - 壳体组件、天线组件及电子设备 - Google Patents

壳体组件、天线组件及电子设备 Download PDF

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Publication number
WO2021000733A1
WO2021000733A1 PCT/CN2020/096621 CN2020096621W WO2021000733A1 WO 2021000733 A1 WO2021000733 A1 WO 2021000733A1 CN 2020096621 W CN2020096621 W CN 2020096621W WO 2021000733 A1 WO2021000733 A1 WO 2021000733A1
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WO
WIPO (PCT)
Prior art keywords
wave
transmitting structure
electronic device
antenna module
dielectric substrate
Prior art date
Application number
PCT/CN2020/096621
Other languages
English (en)
French (fr)
Inventor
贾玉虎
Original Assignee
Oppo广东移动通信有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oppo广东移动通信有限公司 filed Critical Oppo广东移动通信有限公司
Priority to JP2021576172A priority Critical patent/JP7307207B2/ja
Priority to EP20834501.7A priority patent/EP3979421A4/en
Priority to KR1020217043316A priority patent/KR20220012362A/ko
Publication of WO2021000733A1 publication Critical patent/WO2021000733A1/zh
Priority to US17/541,234 priority patent/US20220094039A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/02—Refracting or diffracting devices, e.g. lens, prism
    • H01Q15/08—Refracting or diffracting devices, e.g. lens, prism formed of solid dielectric material
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
    • H01Q1/421—Means for correcting aberrations introduced by a radome
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
    • H01Q19/06—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using refracting or diffracting devices, e.g. lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H01Q21/0025—Modular arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/335—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors at the feed, e.g. for impedance matching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/3827—Portable transceivers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K5/00—Casings, cabinets or drawers for electric apparatus
    • H05K5/0086—Casings, cabinets or drawers for electric apparatus portable, e.g. battery operated apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components

Definitions

  • This application relates to the field of electronic equipment, and in particular to a housing assembly, an antenna assembly and an electronic device.
  • the fifth-generation (5th-Generation, 5G) mobile communication is favored by users due to its high communication speed.
  • 5G mobile communications For example, when using 5G mobile communications to transmit data, the transmission speed is hundreds of times faster than that of 4G mobile communications.
  • Millimeter wave signals are the main means to realize 5G mobile communication.
  • millimeter wave antennas are used in electronic equipment, millimeter wave antennas are usually installed in the containment space inside the electronic equipment, and the millimeter wave signal antennas radiate through the electronic equipment.
  • the transmittance is low, which does not meet the requirements of antenna radiation performance. Or, the transmittance of the external millimeter wave signal through the electronic device is low. It can be seen that in the prior art, the communication performance of the 5G millimeter wave signal is poor.
  • the present application provides a housing assembly, an antenna module and an electronic device to solve the technical problem of poor communication performance of traditional millimeter wave signals.
  • the present application provides a housing assembly, including:
  • a dielectric substrate the dielectric substrate has a first equivalent wave impedance to a radio frequency signal of a preset frequency band, and the difference between the first equivalent wave impedance and the equivalent wave impedance of free space is a first difference;
  • a wave-transmitting structure is carried on the dielectric substrate and at least partially covers a part of the dielectric substrate;
  • the housing assembly has a second equivalent wave impedance to the radio frequency signal of the preset frequency band in the area corresponding to the wave-transmitting structure, and the second equivalent wave impedance is between the wave impedance of the free space
  • the difference is a second difference, wherein the second difference is less than the first difference.
  • the present application also provides an antenna assembly, the antenna assembly comprising: an antenna module and the housing assembly, the antenna module is used to transmit and receive radio frequency of a preset frequency band within a preset direction range Signal, the wave-transmitting structure in the housing assembly is at least partially located in the preset direction.
  • the present application also provides an electronic device, the electronic device including the antenna assembly, wherein the dielectric substrate includes a battery cover or a screen of the electronic device.
  • this application also provides an electronic device, which includes:
  • a first antenna module where the first antenna module is used to transmit and receive a first radio frequency signal in a first frequency band within a first preset direction range;
  • a dielectric substrate, the dielectric substrate and the first antenna module are spaced apart, and at least part of the dielectric substrate is located in the first predetermined direction range, and the dielectric substrate is located in the first predetermined direction range
  • the part of has a first equivalent wave impedance for the first radio frequency signal in the first frequency band, and the difference between the first equivalent wave impedance and the equivalent wave impedance of free space is a first difference;
  • a first wave-transmitting structure the first wave-transmitting structure is carried on the dielectric substrate, and at least part of the first wave-transmitting structure is located within the first predetermined direction range;
  • the electronic device has a second equivalent wave impedance to the first radio frequency signal in the first frequency band in the area corresponding to the first wave-transmitting structure, and the second equivalent wave impedance is the same as the wave impedance in free space
  • the difference between is a second difference, wherein the second difference is less than the first difference.
  • FIG. 1 is a schematic structural diagram of a housing assembly provided by the first embodiment of the application.
  • Fig. 2 is a schematic structural diagram of a housing assembly provided by a second embodiment of the application.
  • FIG. 3 is a schematic structural diagram of a housing assembly provided by a third embodiment of the application.
  • FIG. 4 is a schematic structural diagram of a housing assembly provided by a fourth embodiment of this application.
  • FIG. 5 is a schematic diagram of the wave-transmitting structure provided by the first embodiment of this application.
  • FIG. 6 is a schematic structural diagram of a housing assembly provided by a fifth embodiment of this application.
  • FIG. 7 is a schematic diagram of the wave-transmitting structure provided by the second embodiment of this application.
  • FIG. 8 is a schematic diagram of the wave-transmitting structure provided by the third embodiment of this application.
  • FIG. 9 is a schematic cross-sectional structure diagram of the wave-transmitting structure provided by the fourth embodiment of this application.
  • FIG. 10 is a schematic diagram of the structure of the first wave-transmitting layer in the wave-transmitting structure provided in the fourth embodiment of this application.
  • FIG. 11 is a schematic structural diagram of the second wave-transmitting layer in the wave-transmitting structure provided in the fourth embodiment of this application.
  • FIG. 12 is an equivalent circuit diagram of the wave-transmitting structure provided by the fourth embodiment of this application.
  • FIG. 13 is a schematic structural diagram of an antenna assembly provided by the first embodiment of this application.
  • FIG. 14 is a schematic diagram of the reflection curve and transmission curve of the antenna module in the 20-34 GHz range when the antenna module is under a conventional glass battery cover of 0.7 mm.
  • 15 is a schematic diagram of the reflection curve of the antenna module under the battery cover provided with the wave-transmitting structure.
  • 16 is a schematic diagram of the transmission curve of the antenna module under the battery cover provided with the wave-transmitting structure.
  • FIG. 17 is a schematic structural diagram of an electronic device provided by the first embodiment of this application.
  • Fig. 18 is a schematic cross-sectional structure view taken along line I-I in Fig. 17.
  • Figure 19 is a schematic diagram of standing waves of the antenna module in free space.
  • Figure 20 is a directional diagram of the antenna module in free space.
  • Figure 21 is a schematic diagram of a standing wave of an antenna module under a conventional battery cover.
  • Figure 22 is a directional diagram of the antenna module under a conventional battery cover.
  • FIG. 23 is a schematic diagram of the standing wave of the antenna module under the battery cover of the present application.
  • FIG. 24 is a schematic diagram of the orientation of the antenna module under the battery cover of the present application.
  • FIG. 25 is a schematic diagram of the first wave-transmitting layer in the wave-transmitting structure provided by the fifth embodiment of this application.
  • FIG. 26 is a schematic structural diagram of the first wave-transmitting layer in the wave-transmitting structure provided by the sixth embodiment of this application.
  • FIG. 27 is a schematic diagram of the structure of the first wave-transmitting layer in the wave-transmitting structure provided by the seventh embodiment of this application.
  • FIG. 28 is a schematic diagram of the structure of the first wave-transmitting layer in the wave-transmitting structure provided by the eighth embodiment of this application.
  • FIG. 29 is a schematic structural diagram of the wave-transmitting structure provided by the ninth embodiment of this application.
  • FIG. 30 is a schematic structural diagram of the wave-transmitting structure provided by the tenth embodiment of this application.
  • FIG. 31 is a schematic structural diagram of the wave-transmitting structure provided by the eleventh embodiment of this application.
  • FIG. 32 is a schematic structural diagram of an electronic device provided by the second embodiment of this application.
  • FIG. 33 is a schematic cross-sectional structure view taken along the line II-II in FIG. 32.
  • FIG. 33 is a schematic cross-sectional structure view taken along the line II-II in FIG. 32.
  • FIG. 34 is a schematic structural diagram of an electronic device provided by the third embodiment of this application.
  • Fig. 35 is a schematic cross-sectional structure view taken along line III-III in Fig. 34.
  • FIG. 36 is a schematic structural diagram of an electronic device provided by the fourth embodiment of this application.
  • Fig. 37 is a schematic cross-sectional structure view taken along line IV-IV in Fig. 36.
  • FIG. 38 is a schematic structural diagram of an electronic device provided by the fifth embodiment of this application.
  • Fig. 39 is a schematic sectional view of the structure along the line V-V in Fig. 38.
  • FIG. 40 is a schematic cross-sectional structure diagram of an antenna module in an embodiment of this application.
  • FIG. 41 is a schematic cross-sectional structure diagram of an antenna module in another embodiment of this application.
  • FIG. 42 is a schematic diagram of an M ⁇ N radio frequency antenna array in an embodiment of this application.
  • FIG. 43 is a schematic diagram of a package structure when the antenna modules in an embodiment of the application form a radio frequency antenna array.
  • FIG. 44 is a schematic structural diagram of an electronic device provided by a sixth embodiment of this application.
  • FIG. 45 is a schematic structural diagram of an electronic device provided by a seventh embodiment of this application.
  • FIG. 46 is a schematic structural diagram of an electronic device provided by the eighth embodiment of this application.
  • FIG. 47 is a schematic structural diagram of an electronic device provided by a ninth embodiment of this application.
  • FIG. 48 is a schematic structural diagram of an electronic device provided by a tenth embodiment of this application.
  • FIG. 49 is a schematic structural diagram of an electronic device provided by the eleventh embodiment of this application.
  • FIG. 50 is a schematic structural diagram of an electronic device provided by a twelfth embodiment of this application.
  • FIG. 51 is a schematic structural diagram of an electronic device provided by a thirteenth embodiment of this application.
  • FIG. 52 is a schematic structural diagram of a screen in an electronic device provided by the fourteenth embodiment of this application.
  • the present application provides a housing assembly, including:
  • a dielectric substrate the dielectric substrate has a first equivalent wave impedance to a radio frequency signal of a preset frequency band, and the difference between the first equivalent wave impedance and the equivalent wave impedance of free space is a first difference;
  • a wave-transmitting structure is carried on the dielectric substrate and at least partially covers a part of the dielectric substrate;
  • the housing assembly has a second equivalent wave impedance to the radio frequency signal of the preset frequency band in the area corresponding to the wave-transmitting structure, and the second equivalent wave impedance is between the wave impedance of the free space
  • the difference is a second difference, wherein the second difference is less than the first difference.
  • the housing assembly further includes an adhesive layer disposed between the wave-transmitting structure and the dielectric substrate to connect the wave-transmitting structure Bonded to the dielectric substrate.
  • the housing assembly further includes a carrier film, the carrier film is used to carry the wave-transmitting structure, and the carrier film is arranged at the The wave-transmitting structure is away from the side of the adhesive layer.
  • the dielectric substrate includes a first surface and a second surface that are opposed to each other, and the wave-transmitting structure is provided on the first surface; or, the wave-transmitting structure is provided on the The second surface, or, the wave-transmitting structure is embedded in the dielectric substrate.
  • the wave-transmitting structure includes a plurality of conductive lines arranged at intervals along the first direction and a plurality of conductive lines arranged at intervals along the second direction, and the conductive lines are arranged at intervals along the first direction.
  • the conductive lines arranged at intervals in the direction and the conductive lines arranged at intervals in the second direction are arranged to cross each other, and jointly form a plurality of grid structures arranged in an array.
  • the wave-transmitting structure includes a plurality of grid structures arranged in an array, each of the grid structures is surrounded by at least one conductive line, and two adjacent grids
  • the lattice structure reuses at least part of the conductive lines.
  • the shape of the grid structure is any one of a circle, a rectangle, a triangle, a polygon, and an ellipse.
  • the preset frequency band shifts to a low frequency as the width of the conductive line decreases , And the bandwidth increases; the preset frequency band shifts to a low frequency as the side length or inner diameter of the grid structure increases, and the bandwidth increases; the preset frequency band increases with the thickness of the dielectric substrate The larger segment shifts to low frequency and the bandwidth decreases.
  • the present application provides an antenna assembly, the antenna assembly includes: an antenna module and as described in any one of the first aspect and the first implementation to the eighth implementation of the first aspect
  • the antenna module is used to transmit and receive radio frequency signals of a preset frequency band within a preset direction range, and the wave-transmitting structure in the housing assembly is at least partially located in the preset direction.
  • the present application provides an electronic device, characterized in that the electronic device includes the antenna assembly according to the second aspect, wherein the dielectric substrate includes a battery cover or a screen of the electronic device.
  • the battery cover of the electronic device when the dielectric substrate includes the battery cover of the electronic device, the battery cover of the electronic device includes a back plate and a frame bent and extended from the periphery of the back plate, The wave-transmitting structure is arranged corresponding to the backplane, or the wave-transmitting structure is arranged corresponding to the frame.
  • the screen when the dielectric substrate includes a screen of the electronic device, the screen includes a screen main body and an extension portion bent and extended from the periphery of the screen main body, and the wave-transmitting structure It is provided corresponding to the screen body, or the wave-transmitting structure is provided corresponding to the extension part.
  • the dielectric substrate includes a screen of an electronic device
  • the screen includes a stacked display panel and a cover plate
  • the wave-transmitting structure is provided on the cover plate.
  • the wave-transmitting structure is disposed on the surface of the cover plate facing the display panel.
  • the display panel includes a color filter substrate, and the color filter substrate is provided with color resist units arranged in a matrix, and adjacent color resist units A black matrix is arranged therebetween, and at least a part of the wave-transmitting structure is arranged corresponding to the black matrix.
  • the present application provides an electronic device, which includes:
  • a first antenna module where the first antenna module is used to transmit and receive a first radio frequency signal in a first frequency band within a first preset direction range;
  • a dielectric substrate, the dielectric substrate and the first antenna module are spaced apart, and at least part of the dielectric substrate is located in the first predetermined direction range, and the dielectric substrate is located in the first predetermined direction range
  • the part of has a first equivalent wave impedance for the first radio frequency signal in the first frequency band, and the difference between the first equivalent wave impedance and the equivalent wave impedance of free space is a first difference;
  • a first wave-transmitting structure the first wave-transmitting structure is carried on the dielectric substrate, and at least part of the first wave-transmitting structure is located within the first predetermined direction range;
  • the electronic device has a second equivalent wave impedance to the first radio frequency signal in the first frequency band in the area corresponding to the first wave-transmitting structure, and the second equivalent wave impedance is the same as the wave impedance in free space
  • the difference between is a second difference, wherein the second difference is less than the first difference.
  • the electronic device further includes:
  • a second antenna module, the second antenna module and the first antenna module are spaced apart and the second antenna module is located outside the first preset direction range, the second antenna module For transmitting and receiving a second radio frequency signal in the second frequency band within a second preset direction range;
  • the dielectric substrate is also spaced apart from the second antenna module, at least part of the dielectric substrate is located within the second preset direction range, and the portion of the dielectric substrate located within the second preset direction range is opposite to
  • the second radio frequency signal of the second frequency band has a third equivalent wave impedance, and the difference between the third equivalent wave impedance and the wave impedance of free space is a third difference;
  • a second wave-transmitting structure is carried on the dielectric substrate, and at least part of the second wave-transmitting structure is located within the second predetermined direction range;
  • the electronic device has a fourth equivalent wave impedance to the second radio frequency signal in the second frequency band in an area corresponding to the second wave-transmitting structure, which is between the fourth equivalent wave impedance and the wave impedance in free space
  • the difference between is a fourth difference, wherein the fourth difference is smaller than the third difference.
  • the dielectric substrate includes a battery cover of the electronic device, and the battery cover of the electronic device includes a back plate and a peripheral edge of the back plate. Fold and extend the frame, wherein the first antenna module and the second antenna module are both corresponding to the backplane; alternatively, the first antenna module and the second antenna module are both corresponding to the The frame is set; or, the first antenna module is set corresponding to the backplane and the second antenna module is set corresponding to the frame.
  • the dielectric substrate includes a screen of the electronic device, and the screen includes a screen main body and an extension part curved and extended from the periphery of the screen main body, wherein, the first antenna module and the second antenna module are both provided corresponding to the screen main body; or, the first antenna module and the second antenna module are both provided corresponding to the extension part; Alternatively, the first antenna module is provided corresponding to the screen body, and the second antenna module is provided corresponding to the extension portion.
  • FIG. 1 is a schematic structural diagram of a housing assembly provided by the first embodiment of the application.
  • the housing assembly 100 includes a dielectric substrate 110 and a wave-transmitting structure 120.
  • the dielectric substrate 110 has a first equivalent wave impedance to a radio frequency signal of a preset frequency band, and the difference between the first equivalent wave impedance and the equivalent wave impedance of free space is a first difference.
  • the wave-transmitting structure 120 is carried on the dielectric substrate 110 and covers at least a part of the dielectric substrate 110.
  • the housing assembly 100 has a second equivalent wave impedance to the radio frequency signal of the preset frequency band in the area corresponding to the wave-transmitting structure 120, and the second equivalent wave impedance is different from the wave impedance in free space.
  • the difference between is a second difference, wherein the second difference is less than the first difference.
  • the radio frequency signal may be, but is not limited to, a radio frequency signal in the millimeter wave frequency band or a radio frequency signal in the terahertz frequency band.
  • the 5G new radio mainly uses two frequencies: FR1 frequency band and FR2 frequency band.
  • the frequency range of the FR1 frequency band is 450MHz ⁇ 6GHz, also called the sub-6GHz frequency band;
  • the frequency range of the FR2 frequency band is 24.25GHz ⁇ 52.6GHz, which belongs to the millimeter wave (mm Wave) frequency band.
  • 3GPP Release 15 standardizes the current 5G millimeter wave frequency bands including: n257 (26.5-29.5GHz), n258 (24.25-27.5GHz), n261 (27.5-28.35GHz) and n260 (37-40GHz).
  • the wave-transmitting structure 120 may have any one of single-frequency single-polarization, single-frequency dual-polarization, dual-frequency dual-polarization, dual-frequency single-polarization, broadband single-polarization, broadband dual-polarization, and other characteristics.
  • the wave-transmitting structure 120 has any one of a dual-frequency resonance response, or a single-frequency resonance response, or a broadband resonance response, or a multi-frequency resonance response.
  • the material of the wave-transmitting structure 120 may be a metal material or a non-metal conductive material.
  • the wave-transmitting structure 120 on the dielectric substrate 110 is excited by the radio frequency signal of the preset frequency band, and the wave-transmitting structure 120 generates the same frequency band as the preset frequency band according to the radio frequency signal of the preset frequency band.
  • the radio frequency signal penetrates the dielectric substrate 110 and radiates into the free space. Since the wave-transmitting structure 120 is excited and generates a radio frequency signal of the same frequency band as the predetermined frequency band, the amount of the radio frequency signal of the predetermined frequency band that penetrates the dielectric substrate 110 and radiates into the free space increases.
  • the housing assembly 100 includes a wave-transmitting structure 120 and a dielectric substrate 110. Therefore, the dielectric constant of the housing assembly 100 can be equivalent to the dielectric constant of a preset material, and the preset The dielectric constant of the material has a high transmittance to the radio frequency signal of the preset frequency band, and the equivalent wave impedance of the preset material is equal to or approximately equal to the equivalent wave impedance of free space.
  • the housing assembly 100 provided in the present application carries the wave-transmitting structure 120 on the dielectric substrate 110, and through the action of the wave-transmitting structure 120, the housing assembly 100 has an equivalent wave impedance and freedom for a preset frequency band.
  • the difference between the wave impedances of the space is reduced, so that the transmittance of the housing assembly 100 to the radio frequency signal of the preset frequency band is improved.
  • the housing assembly 100 When the housing assembly 100 is used in an electronic device, it can reduce the transmission rate.
  • the influence of the housing assembly 100 on the radiation performance of the antenna module disposed inside the housing assembly 100 improves the communication performance of the electronic device.
  • the dielectric substrate 110 includes a first surface 110a and a second surface 110b disposed oppositely, and the wave-transmitting structure 120 is disposed on the first surface 110a.
  • the electronic device further includes an antenna module 200, and the first surface 110a is set away from the antenna module 200 compared to the second surface 110b.
  • the housing assembly 100 further includes the housing assembly and an adhesive layer 140.
  • the bonding layer 140 is disposed between the wave-permeable structure 120 and the dielectric substrate 110 to bond the wave-permeable structure 120 to the dielectric substrate 110.
  • the wave-transmitting structure 120 is bonded to the first surface 110a of the dielectric substrate 110 through the adhesive layer 140 and completely covers the first surface 110a as an example for illustration. It is understandable that, in other embodiments, the wave-transmitting structure 120 may also be directly disposed on the first surface 110a of the dielectric substrate 110 or directly on the second surface 110b of the dielectric substrate 110. In other embodiments, the hand-transmitting structure 120 may also be embedded in the dielectric substrate 110.
  • FIG. 2 is a schematic structural diagram of a housing assembly provided by a second embodiment of the application.
  • the housing assembly 100 includes a dielectric substrate 110 and a wave-transmitting structure 120.
  • the dielectric substrate 110 has a first equivalent wave impedance to a radio frequency signal of a preset frequency band, and the difference between the first equivalent wave impedance and the equivalent wave impedance of free space is a first difference.
  • the wave-transmitting structure 120 is carried on the dielectric substrate 110, and covers at least a part of the dielectric substrate 110; the housing assembly 100 is in the area corresponding to the wave-transmitting structure 120, and the predetermined frequency band
  • the radio frequency signal has a second equivalent wave impedance, and the difference between the second equivalent wave impedance and the wave impedance of free space is a second difference, wherein the second difference is smaller than the first difference value.
  • the wave-transmitting structure 120 is disposed on the second surface 110b.
  • the electronic device further includes an antenna module 200, and the first surface 110a is set away from the antenna module 200 compared to the second surface 110b.
  • FIG. 3 is a schematic structural diagram of the housing assembly provided by the third embodiment of the application.
  • the housing assembly 100 includes a dielectric substrate 110 and a wave-transmitting structure 120.
  • the dielectric substrate 110 has a first equivalent wave impedance to a radio frequency signal of a preset frequency band, and the difference between the first equivalent wave impedance and the equivalent wave impedance of free space is a first difference.
  • the wave-transmitting structure 120 is carried on the dielectric substrate 110, and covers at least a part of the dielectric substrate 110; the housing assembly 100 is in the area corresponding to the wave-transmitting structure 120, and the predetermined frequency band
  • the radio frequency signal has a second equivalent wave impedance, and the difference between the second equivalent wave impedance and the wave impedance of free space is a second difference, wherein the second difference is smaller than the first difference value.
  • the wave-transmitting structure 120 is embedded in the dielectric substrate 110.
  • FIG. 4 is a schematic structural diagram of a housing assembly provided by a fourth embodiment of this application.
  • the housing assembly 100 includes a dielectric substrate 110 and a wave-transmitting structure 120.
  • the dielectric substrate 110 has a first equivalent wave impedance to a radio frequency signal of a preset frequency band, and the difference between the first equivalent wave impedance and the equivalent wave impedance of free space is a first difference.
  • the wave-transmitting structure 120 is carried on the dielectric substrate 110, and covers at least a part of the dielectric substrate 110; the housing assembly 100 is in the area corresponding to the wave-transmitting structure 120, and the predetermined frequency band
  • the radio frequency signal has a second equivalent wave impedance, and the difference between the second equivalent wave impedance and the wave impedance of free space is a second difference, wherein the second difference is smaller than the first difference value.
  • the housing assembly 100 further includes a carrying film 130 for carrying the wave-transmitting structure 120.
  • the carrier film 130 is disposed on a side of the wave-transmitting structure 120 away from the adhesive layer 140.
  • the carrier film 130 may be, but is not limited to, a plastic (Polyethylene terephthalate, PET) film, a flexible circuit board, a printed circuit board, or the like.
  • the PET film can be, but is not limited to, a color film, an explosion-proof film, and the like.
  • the wave-transmitting structure 120 is prepared on the supporting film 130. During the preparation of the wave-transmitting structure 120, the supporting film 130 plays a supporting role. After the preparation of the wave-transmitting structure 120 is completed , And then adhere to the dielectric substrate 110 through the adhesive layer 140.
  • the carrier film 130 is disposed on a side of the wave-transmitting structure 120 away from the adhesive layer 140 to protect the wave-transmitting structure 120.
  • the dielectric substrate 110 includes a first surface 110a and a second surface 110b opposite to each other, and the first surface 110a is disposed away from the antenna module 200 compared to the second surface 110b.
  • the wave-transmitting structure 120 is attached to the second surface 110b through the adhesive layer 140 as an example for illustration. It is understandable that in other embodiments, the wave-transmitting structure 120 The structure 120 can also be attached to the first surface 110a through the adhesive layer 140. According to experimental calculations, the greater the thickness of the carrier film 130, the more the preset frequency band shifts toward low frequencies.
  • FIG. 5 is a schematic diagram of the wave-transmitting structure provided by the first embodiment of this application.
  • the wave-transmitting structure 120 includes one or more wave-transmitting layers 120a.
  • the multi-layer wave-transmitting layers 120a are stacked in a predetermined direction and arranged at intervals.
  • a dielectric layer 110c is provided between two adjacent wave-transmitting layers 120a, and all the dielectric layers 110c constitute the dielectric substrate 110.
  • the wave-transmitting structure 120 includes three wave-transmitting layers 120a and two dielectric layers 110c as an example for illustration. Further, the preset direction is parallel to the main lobe direction of the radio frequency signal. The so-called main lobe refers to the beam with the highest radiation intensity in the radio frequency signal.
  • FIG. 6 is a schematic structural diagram of a housing assembly according to a fifth embodiment of the present application.
  • the dielectric substrate 110 includes a first surface 110a and a second surface 110b that are opposed to each other. Part of the wave-transmitting structure 120 is provided on the first surface 110a, and the remaining wave-transmitting structure 120 is embedded in the dielectric substrate. 110.
  • the electronic device When the housing assembly 100 is applied to an electronic device, the electronic device further includes an antenna module 200, and the first surface 110a is set away from the antenna module 200 compared to the second surface 110b.
  • the wave-transmitting structure 120 is made of a metal material or a non-metal conductive material.
  • the material of the dielectric substrate 110 is at least one or a combination of plastic, glass, sapphire, and ceramic.
  • FIG. 7 is a schematic diagram of the wave-transmitting structure provided by the second embodiment of this application.
  • the wave-transmitting structure 120 can be combined with the housing assembly 100 provided in any of the foregoing embodiments.
  • the wave-transmitting structure 120 includes a plurality of resonance units 120b, and the resonance units 120b are periodically arranged.
  • FIG. 8 is a schematic diagram of the wave-transmitting structure provided by the third embodiment of this application.
  • the wave-transmitting structure 120 can be incorporated into the housing assembly 100 provided in any of the foregoing embodiments.
  • the wave-transmitting structure 120 includes a plurality of resonance units 120b, and the resonance units 120b are arranged aperiodically.
  • FIG. 9 is a schematic cross-sectional structure diagram of the wave-transmitting structure provided in the fourth embodiment of the application
  • FIG. 10 is the first transparent structure of the wave-transmitting structure provided in the fourth embodiment of the application.
  • FIG. 11 is a schematic diagram of the second wave-transmitting layer in the wave-transmitting structure provided in the fourth embodiment of this application.
  • the wave-transmitting structure 120 can be integrated into the housing assembly 100 provided in any of the foregoing embodiments.
  • the wave-transmitting structure 120 includes a first wave-transmitting layer 121, a second wave-transmitting layer 122, and a third wave-transmitting layer 123 arranged at intervals, and the dielectric substrate 110 includes a first dielectric layer 111 and a second dielectric layer 112,
  • the first wave-permeable layer 121, the first dielectric layer 111, the second wave-permeable layer 122, the second dielectric layer 112, and the third wave-permeable layer 123 are stacked in sequence.
  • the first wave-permeable layer 121 includes a plurality of first patches 1211 arranged in an array
  • the second wave-permeable layer 122 includes a grid structure 1221 that is periodically arranged
  • the third wave-permeable layer 123 includes an array A plurality of second patches 1231 are arranged. The smaller the size L1 of the first patch 1211 or the second patch 1231 is, the preset frequency band shifts toward low frequencies and the bandwidth decreases.
  • one grid structure 1221 corresponds to four first patches 1211
  • one grid connection 1221 corresponds to four third patches 1231, and serves as a period of the wave-transmitting structure 1221.
  • FIG. 12 is an equivalent circuit diagram of the wave-transmitting structure provided by the fourth embodiment of this application.
  • factors that have little influence on the preset frequency band are ignored, for example, the inductance of the first wave-transmitting layer 121, the inductance of the third wave-transmitting layer 123, and the second wave-transmitting layer 122 The electric capacity.
  • the first wave-transmitting layer 121 is equivalent to a capacitor C1
  • the second wave-transmitting layer 122 is equivalent to a capacitor C2
  • the coupling capacitance of the first wave-transmitting layer 121 and the second wave-transmitting layer 122 is equivalent to a capacitor C3
  • the third wave-transmitting layer 123 is equivalent to the inductor L.
  • Z0 represents the impedance of the free space
  • Z1 represents the impedance of the dielectric substrate 110
  • Z1 Z0/(Dk) 1/2
  • the bandwidth ⁇ f/f0 is proportional to (L/C) 1/2 .
  • the dielectric constant of the glass is usually between 6 and 7.6.
  • the size range of the first patch 1211 is usually selected to be between 0.5 and 0.8 mm
  • the width of the solid part of the grid in the second wave-transmitting structure 128 is usually selected to be between 0.1 and 0.5 mm
  • a period is usually 1.5 to 3.0mm.
  • the wave-transmitting structure 120 is applied to a battery cover of an electronic device, the gap between the upper surface of the antenna module 200 and the inner surface of the battery cover is usually selected to be greater than or equal to zero, usually 0.5 to 1.2 mm .
  • FIG. 13 is a schematic structural diagram of the antenna assembly provided by the first embodiment of this application.
  • the antenna assembly 10 includes an antenna module 200 and a housing assembly 100.
  • the antenna module 200 is used to transmit and receive radio frequency signals of a preset frequency band within a preset direction range, and the wave-transmitting structure 120 in the housing assembly 100 is located at least in the preset direction.
  • the housing assembly 100 please refer to the housing assembly 100 introduced in each of the foregoing embodiments, and will not be repeated here.
  • the antenna assembly 10 shown in this embodiment is illustrated by taking the housing assembly 100 shown in the first embodiment as an example.
  • FIG. 14 is a schematic diagram of the reflection curve and the transmission curve of the antenna module in the range of 20-34 GHz when the antenna module is under a conventional glass battery cover of 0.7 mm.
  • the conventional glass battery cover is not provided with the wave-transmitting structure 120 of the present application.
  • the horizontal axis is frequency, in GHz; the vertical axis is gain, in dB.
  • Curve 1 is the reflection coefficient curve. It can be seen from curve 1 that in the 20-34 GHz frequency band, the gain is above -10dB, that is, the reflection of the radio frequency signal is larger, and the higher the frequency, the greater the reflection.
  • the curve 2 is the transmission coefficient curve. It can be seen from the curve 2 that the gain loss reaches -2.3dB or more in the frequency range of 22 ⁇ 30GHz. Comprehensive curve 1 and curve 2 shows that the antenna module under the traditional glass battery cover has a large reflection and a large transmission loss.
  • Figure 15 is a schematic diagram of the reflection curve of the antenna module under the battery cover with a wave-transmitting structure
  • Figure 16 is the transmission curve of the antenna module under the battery cover with the wave-transmitting structure Schematic.
  • the horizontal axis is the frequency, the unit is GHz; the vertical axis is the gain, the unit is dB.
  • the frequency when the gain is less than or equal to -10dB has a small reflection coefficient. Therefore, the gain is usually defined as less than or equal to -10dB.
  • the frequency band is the working frequency band of the antenna module. It can be seen from the curve in FIG. 15 that the working frequency band of the antenna module 200 is 22.288-30.511 GHz.
  • the horizontal axis is the frequency, the unit is GHz; the vertical axis is the gain, the unit is dB.
  • the gain is greater than -1dB in the curve, the antenna module 200 has a good transmission coefficient in this frequency band.
  • the curve in 16 shows that the antenna module 200 has a good transmission coefficient from 22.148 to 29.538 GHz.
  • FIG. 17 is a schematic structural diagram of an electronic device provided by the first embodiment of the application
  • FIG. 18 is a schematic cross-sectional structural diagram along the line I-I in FIG. 17.
  • the electronic device 1 includes an antenna assembly 10, please refer to the foregoing description for the antenna assembly 10, and will not be repeated here.
  • the dielectric substrate 110 includes the battery cover 30 of the electronic device 1.
  • the battery cover 30 and the screen 40 are enclosed to form an accommodation space, and the accommodation space is used to accommodate the functional devices of the electronic device 1.
  • the electronic device includes the antenna assembly 10 described in any of the foregoing embodiments.
  • the dielectric substrate 110 includes the battery cover 30 of the electronic device 1
  • the battery cover 30 of the electronic device 1 includes a back plate 310 and a back plate 310.
  • a frame 320 extending by bending the periphery, and the wave-transmitting structure 120 is disposed corresponding to the back plate 310.
  • the electronic device 1 includes, but is not limited to, smart phones, Internet devices (mobile internet devices, MID), e-books, portable playback stations (Play Station Portable, PSP), or personal digital assistants (Personal Digital Assistant, PDA), etc. with breathing lights Functional electronic equipment 1.
  • the electronic device 1 provided by the present application will be described in detail below.
  • FIG. 19 is a schematic diagram of a standing wave of the antenna module in free space
  • FIG. 20 is a directional diagram of the antenna module in free space.
  • the antenna module 200 is a 2 ⁇ 2 array as an example for simulation.
  • the horizontal axis in Figure 16 is the frequency, in GHz; the vertical axis is the gain, in dB, and the frequency band less than or equal to -10dB in the standing wave curve is the operating frequency band of the antenna module.
  • the antenna The working frequency band of the module is between 26.71--29.974GHz.
  • the antenna module has good gains at 27GHz, 28GHz and 29GHz.
  • the gain of the antenna module 200 at 27GHz is 9.73dB, and the gain of the antenna module 200 at 28GHz is 10.1dB.
  • the gain of the module 200 at 29 GHz is 10.3 dB. It can be seen that the antenna module 200 has relatively large gains at 27 GHz, 28 GHz, and 29 GHz. It should be noted that due to the symmetrical design of the 2 ⁇ 2 array antenna module 200, the standing wave parameter curves of the four antenna elements in the 2 ⁇ 2 array antenna module 200 overlap in free space. S11, S22, S33, and S44 marked in the figure respectively represent the return loss of the four antenna elements in the antenna module 200 of the 2 ⁇ 2 array.
  • FIG. 21 is a schematic diagram of standing waves of the antenna module under a conventional battery cover
  • FIG. 22 is a directional diagram of the antenna module under a conventional battery cover.
  • the antenna module 200 is a 2 ⁇ 2 array as an example for simulation.
  • the horizontal axis is frequency, in GHz; the vertical axis is gain, in dB, and the frequency band in the standing wave curve where the gain is less than or equal to -10dB is the operating frequency band of the antenna module.
  • the standing wave of the radio frequency signal in the 24-32 GHz frequency band is above -10 dB.
  • the radio frequency signal in the 24-32 GHz frequency band is highly reflected. It can be seen from Figure 22 that the antenna module 200 has a gain of 5.58dB at 27GHz, a gain of 6.68dB at 28GHz, and a gain of 7.12dB at 29GHz. It can be seen that the antenna module has a higher reflection coefficient under a traditional battery cover. Large and small gain.
  • the standing wave parameter curve S11 and the standing wave parameter curve S33 in the 2 ⁇ 2 array antenna module 200 overlap, and the standing wave The parameter curve S22 and the standing wave parameter curve S44 coincide.
  • S11, S22, S33, and S44 marked in the figure respectively represent the return loss of the four antenna elements in the antenna module 200 of the 2 ⁇ 2 array.
  • FIG. 23 is a schematic diagram of a standing wave of the antenna module under the battery cover of the present application
  • FIG. 24 is a schematic view of the direction of the antenna module under the battery cover of the present application.
  • the antenna module 200 is a 2 ⁇ 2 array as an example for simulation.
  • the horizontal axis is frequency, the unit is GHz; the vertical axis is gain, the unit is dB, and the frequency band less than or equal to -10dB in the standing wave curve is the operating frequency band of the antenna module. It can be seen from the standing wave curve in FIG. 23 that the antenna module 200 has a wider working frequency band. It can be seen from FIG.
  • the gain of the antenna module 200 at 27 GHz is 9.55 dB
  • the gain of the antenna module 200 at 28 GHz is 10.1 dB
  • the gain at 29 GHz is 10.6 dB. It can be seen that the antenna module 200 has a wider working frequency band and better gain under the battery cover 30 of the present application, which is almost the same as the working frequency band of the antenna module 200 in free space, and is similar to that in free space. The gain is almost the same.
  • the standing wave parameter curve S11 and the standing wave parameter curve S33 in the 2 ⁇ 2 array antenna module 200 overlap, and the standing wave The parameter curve S22 and the standing wave parameter curve S44 coincide.
  • S11, S22, S33, and S44 marked in the figure respectively represent the return loss of the four antenna elements in the antenna module 200 of the 2 ⁇ 2 array.
  • FIG. 25 is a schematic diagram of the first wave-transmitting layer in the wave-transmitting structure provided by the fifth embodiment of this application.
  • the wave-transmitting structure 120 provided in this embodiment is basically the same as the wave-transmitting structure 120 provided in the fourth embodiment.
  • the difference is that in the fourth embodiment, the first patch 1211 is a rectangular patch.
  • the first wave-transmitting layer 121 includes a plurality of first patches 1211 arranged in an array, and the first patches 1211 are circular.
  • the diameter D of the circular first patch 1211 ranges from 0.5 to 0.8 mm.
  • the third wave-transmitting layer 123 includes a plurality of second patches 1231 arranged in an array, and the second patches 1231 are circular.
  • the diameter D of the circular second patch 1231 ranges from 0.5 to 0.8 mm.
  • the structure of the third wave-permeable layer 123 may be the same as the structure of the first wave-permeable layer 121.
  • FIG. 26 is a schematic diagram of the first wave-transmitting layer in the wave-transmitting structure provided by the sixth embodiment of this application.
  • the wave-transmitting structure 120 provided in this embodiment is basically the same as the wave-transmitting structure 120 provided in the fourth embodiment.
  • the first patch 1211 is a rectangular patch.
  • the first wave-transmitting layer 121 includes a plurality of first patches 1211 arranged in an array, and the first patches 1211 have a circular ring shape.
  • the material of the first patch 1211 is metal
  • the first patch 1211 has a circular ring shape so that the transparency of the wave-transmitting structure 120 can be improved.
  • the diameter Do of the size of the circular first patch 1211 is usually 0.5-0.8 mm, and the inner diameter Di of the circular first patch 1211, generally speaking, the smaller the value of Do-Di,
  • the transparency of the wave-transmitting structure 120 is higher, but the insertion loss is higher.
  • the value of the Do-Di is usually: Do-Di ⁇ 0.5 mm.
  • the structure of the third wave-permeable layer 123 may be the same as the structure of the first wave-permeable layer 121.
  • FIG. 27 is a schematic structural diagram of the first wave-transmitting layer in the wave-transmitting structure provided by the seventh embodiment of this application.
  • the wave-transmitting structure 120 provided in this embodiment is basically the same as the wave-transmitting structure 120 provided in the fourth embodiment.
  • the first patch 1211 is a rectangular patch.
  • the first wave-transmitting layer 121 includes a plurality of first patches 1211 arranged in an array, and the first patches 1211 are square ring-shaped patches.
  • the side length of the square first patch 1211 is Lo usually 0.5-0.8mm, and the inside of the square ring patch becomes Li.
  • the value of the Do-Di is usually: Lo-Li ⁇ 0.5 mm.
  • the structure of the third wave-permeable layer 123 may be the same as the structure of the first wave-permeable layer 121.
  • FIG. 28 is a schematic structural diagram of the first wave-transmitting layer in the wave-transmitting structure provided by the eighth embodiment of this application.
  • the wave-transmitting structure 120 provided in this embodiment includes a plurality of first patches 1211 arranged in an array, and each of the first patches 1211 is a square metal grid patch (mesh grid).
  • the first patch 1211 includes a plurality of first branches 1212 and a plurality of second branches 1213, the plurality of first branches 1212 are arranged at intervals, and the plurality of second branches 1213 are arranged at intervals, and The second branch 1213 and the first branch 1212 are crossed and connected.
  • the first branches 1212 extend along a first direction and the plurality of first branches 1212 are arranged at intervals along the second direction.
  • the second branch 1213 crosses the first branch 1212 perpendicularly.
  • the side length of the first patch 1211 is 0.5-0.8 mm.
  • FIG. 29 is a schematic structural diagram of the wave-transmitting structure provided by the ninth embodiment of this application.
  • the wave-transmitting structure 120 includes a plurality of conductive lines 151 arranged at intervals in the first direction and a plurality of conductive lines 161 arranged at intervals in the second direction, and the conductive lines 161 are arranged at intervals in the first direction.
  • the arranged conductive lines 151 and the conductive lines 161 arranged at intervals along the second direction are arranged to cross each other, and jointly form a plurality of grid structures 163 arranged in an array.
  • two conductive lines 151 arranged at intervals along the first direction intersect with two conductive lines 161 arranged at intervals along the second direction to form one grid structure 163.
  • the first direction is perpendicular to the second direction. In other embodiments, the first direction is not perpendicular to the second direction. It can be understood that, among the plurality of conductive lines 151 arranged at intervals in the first direction, the spacing between two adjacent conductive lines 151 may be the same or different.
  • the spacing between two adjacent conductive lines 151 may be the same or different.
  • the distance between two adjacent conductive lines 151 and the distance between two adjacent conductive lines 151 may be the same or different.
  • the first direction is perpendicular to the second direction and the distance between two adjacent conductive lines 151 is equal to the distance between two adjacent conductive lines 161 as an example.
  • the preset frequency band shifts to a low frequency, and the bandwidth increases.
  • the preset frequency band shifts to a low frequency as the side length or inner length of the grid structure 163 increases, and the bandwidth increases.
  • the preset frequency band shifts to a low frequency as the thickness of the dielectric substrate 110 provided by the wave-transmitting structure 120 increases, and the bandwidth decreases.
  • FIG. 30 is a schematic structural diagram of a wave-transmitting structure provided by a tenth embodiment of this application.
  • the wave-transmitting structure 120 includes a plurality of grid structures 163 arranged in an array. Each grid structure 163 is surrounded by at least one conductive line 151, and two adjacent grid structures 163 multiplex at least part of the conductive line 151.
  • the shape of the grid structure 163 can be, but is not limited to, any one of a circle, a rectangle, a triangle, a polygon, and an ellipse.
  • the number of sides of the grid structure 163 is a positive integer greater than 3.
  • the shape of the grid structure 163 is taken as an example for illustration.
  • the preset frequency band shifts to a low frequency, and the bandwidth increases.
  • the preset frequency band shifts to a low frequency as the side length or inner length of the grid structure 163 increases, and the bandwidth increases.
  • the preset frequency band shifts to a low frequency as the thickness of the dielectric substrate 110 provided by the wave-transmitting structure 120 increases, and the bandwidth decreases.
  • the period of the mesh structure 163 is the side length of the mesh structure 163.
  • the period of the grid structure 163 is the inner diameter of the grid structure 163.
  • FIG. 31 is a schematic structural diagram of the wave-transmitting structure provided by the eleventh embodiment of this application.
  • the shape of the grid structure 163 is a regular hexagon as an example for illustration.
  • the preset frequency band shifts to a low frequency, and the bandwidth increases.
  • the preset frequency band shifts to a low frequency as the side length or inner length of the grid structure 163 increases, and the bandwidth increases.
  • the preset frequency band shifts to a low frequency as the thickness of the dielectric substrate 110 provided by the wave-transmitting structure 120 increases, and the bandwidth decreases.
  • FIG. 32 is a schematic structural diagram of an electronic device according to the second embodiment of the application;
  • FIG. 33 is a schematic cross-sectional structural diagram along the line II-II in FIG. 32.
  • the electronic device 1 includes an antenna assembly 10, please refer to the foregoing description for the antenna assembly 10, and will not be repeated here.
  • the dielectric substrate 110 includes the battery cover 30 of the electronic device 1.
  • the battery cover 30 of the electronic device 1 includes a back plate 310 and a frame 320 bent and extended from the periphery of the back plate 310, and the wave-transmitting structure 120 is disposed corresponding to the frame 320.
  • FIG. 34 is a schematic structural diagram of an electronic device according to a third embodiment of the application;
  • FIG. 35 is a schematic cross-sectional structural diagram along the line III-III in FIG. 34.
  • the electronic device 1 includes an antenna assembly 10, please refer to the foregoing description for the antenna assembly 10, and will not be repeated here.
  • the dielectric substrate 110 includes the screen 40 of the electronic device 1.
  • the screen 40 includes a screen main body 410 and an extension 420 extending from the periphery of the screen main body 410, and the wave-transmitting structure 120 corresponds to The screen body 410 is set.
  • FIG. 36 is a schematic structural diagram of an electronic device according to a fourth embodiment of the present application
  • FIG. 37 is a schematic cross-sectional structural diagram along the line IV-IV in FIG. 36.
  • the electronic device 1 includes an antenna assembly 10, please refer to the foregoing description for the antenna assembly 10, and will not be repeated here.
  • the dielectric substrate 110 includes the screen 40 of the electronic device 1.
  • the screen 40 includes a screen main body 410 and an extension part 420 curvedly extending from the periphery of the screen main body 410, and the wave-transmitting structure 120 is disposed corresponding to the extension part 420.
  • FIG. 38 is a schematic structural diagram of an electronic device according to a fifth embodiment of this application;
  • FIG. 39 is a schematic cross-sectional structural diagram along the line V-V in FIG. 38.
  • the electronic device 1 includes an antenna assembly 10, please refer to the foregoing description for the antenna assembly 10, and will not be repeated here.
  • the electronic device 1 includes a battery cover 30 and a protective cover 50, the protective cover 50 covers the surface of the battery cover 30 to protect the battery cover 30, and the dielectric substrate 110 includes the protective cover 50.
  • the wave-transmitting structure 120 is arranged corresponding to the protective cover 50.
  • FIG. 40 is a schematic cross-sectional structure diagram of an antenna module in an embodiment of the application.
  • the antenna module 200 includes a radio frequency chip 230, an insulating substrate 240, and one or more first antenna radiators 250.
  • the radio frequency chip 230 is used to generate an excitation signal (also called a radio frequency signal).
  • the radio frequency chip 230 is arranged away from the wave-transmitting structure 120, and the insulating substrate 240 is used to carry the one or more first antenna radiators 250
  • the radio frequency chip 230 is electrically connected to the one or more first antenna radiators 250 through a transmission line embedded in the insulating substrate 240.
  • the insulating substrate 240 includes a third surface 240a and a fourth surface 240b that are opposite to each other.
  • the insulating substrate 240 is used to carry the one or more first antenna radiators 250.
  • the insulating substrate 240 is arranged on The third surface 240 a or the one or more first antenna radiators 250 are embedded in the insulating substrate 240.
  • the one or more first antenna radiators 250 are disposed on the third surface 240a, and the radio frequency chip 230 is disposed on the fourth surface 240b as an example.
  • the excitation signal generated by the radio frequency chip 230 is electrically connected to the one or more first antenna radiators 250 through a transmission line embedded in the insulating substrate 240.
  • the radio frequency chip 230 can be soldered on the insulating substrate 240 to transmit the excitation signal to the first antenna radiator 250 via a transmission line embedded in the insulating substrate 240.
  • the first antenna radiator 250 receives the excitation signal, and generates a millimeter wave signal according to the excitation signal.
  • the first antenna radiator 250 may be, but is not limited to, a patch antenna.
  • the radio frequency chip 230 is away from the wave-transmitting structure 120 compared to the first antenna radiator 250, and the output terminal of the radio frequency chip 230 that outputs the excitation signal is located at the insulating substrate 240 away from the One side of the wave-transmitting structure 120. That is, the radio frequency chip 230 is disposed adjacent to the fourth surface 240 b of the insulating substrate 240 and away from the third surface 240 a of the insulating substrate 240.
  • each of the first antenna radiators 250 includes at least one feeding point 251, each of the feeding points 251 is electrically connected to the radio frequency chip 230 through the transmission line, and each of the feeding points The distance between the center of the first antenna radiator 250 corresponding to the feeding point 251 and the feeding point 251 is greater than a preset distance. Adjusting the position of the feeding point 251 can change the input impedance of the first antenna radiator 250. In this embodiment, the center of each feeding point 251 and the corresponding first antenna radiator 250 is set The distance is greater than the preset distance, thereby adjusting the input impedance of the first antenna radiator 250.
  • the input impedance of the first antenna radiator 250 is adjusted so that the input impedance of the first antenna radiator 250 matches the output impedance of the radio frequency chip 230.
  • the first antenna radiator 250 and the radio frequency chip 230 match
  • the output impedance of 230 is matched, the reflection amount of the excitation signal generated by the radio frequency signal is the smallest.
  • FIG. 41 is a schematic cross-sectional structure diagram of an antenna module in another embodiment of this application.
  • the antenna module 200 provided in this embodiment is basically the same as the antenna module 200 provided in the description of the antenna module 200 in the first embodiment. The difference is that, in this embodiment, the antenna module 200 further includes a second antenna radiator 260. That is, in this embodiment, the antenna module 200 includes a radio frequency chip 230, an insulating substrate 240, one or more first antenna radiators 250, and a second antenna radiator 260.
  • the radio frequency chip 230 is used to generate an excitation signal.
  • the insulating substrate 240 includes a third surface 240a and a fourth surface 240b disposed opposite to each other, the one or more first antenna radiators 250 are disposed on the third surface 240a, and the radio frequency chip 230 is disposed on the The fourth surface 240b.
  • the excitation signal generated by the radio frequency chip 230 is electrically connected to the one or more first antenna radiators 250 via a transmission line embedded in the insulating substrate 240.
  • the radio frequency chip 230 can be soldered on the insulating substrate 240 to transmit the excitation signal to the first antenna radiator 250 via a transmission line embedded in the insulating substrate 240.
  • the first antenna radiator 250 receives the excitation signal, and generates a millimeter wave signal according to the excitation signal.
  • the radio frequency chip 230 is away from the wave-transmitting structure 120 compared to the first antenna radiator 250, and the output terminal of the radio frequency chip 230 that outputs the excitation signal is located at a distance from the insulating substrate 240. The side of the wave-transmitting structure 120.
  • each of the first antenna radiators 250 includes at least one feeding point 251, each of the feeding points 251 is electrically connected to the radio frequency chip 230 through the transmission line, and each of the feeding points The distance between the center of the first antenna radiator 250 corresponding to the feeding point 251 and the feeding point 251 is greater than a preset distance.
  • the second antenna radiator 260 is embedded in the insulating substrate 240, the second antenna radiator 260 is spaced apart from the first antenna radiator 250, and the second antenna The radiator 260 and the first antenna radiator 250 form a stacked antenna through coupling.
  • the first antenna radiator 250 is electrically connected to the radio frequency chip 230 and the second antenna
  • the radiator 260 is not electrically connected to the radio frequency chip 230, the second antenna radiator 260 couples the millimeter wave signal radiated by the first antenna radiator 250, and the second antenna radiator 260 is coupled to the first antenna radiator 250.
  • a millimeter wave signal radiated by an antenna radiator 250 generates a new millimeter wave signal.
  • the antenna module 200 is prepared by a high-density interconnection process as an example for description below.
  • the insulating substrate 240 includes a core layer 241 and a plurality of wiring layers 242 stacked on opposite sides of the core layer 241.
  • the core layer 241 is an insulating layer, and an insulating layer 243 is usually provided between each wiring layer 242.
  • the outer surface of the wiring layer 242 located on the side of the core layer 241 adjacent to the wave-transmitting structure 120 and farthest from the core layer 241 constitutes the third surface 240 a of the insulating substrate 240.
  • the outer surface of the wiring layer 242 located on the side of the core layer 241 away from the wave-transmitting structure 120 and farthest from the core layer 241 constitutes the fourth surface 240 b of the insulating substrate 240.
  • the first antenna radiator 250 is disposed on the third surface 240a.
  • the second antenna radiator 260 is embedded in the insulating substrate 240, that is, the second antenna radiator 260 can be disposed on another wiring layer 242 for laying out the antenna radiator, and the second antenna radiator The antenna radiator 260 is not provided on the surface of the insulating substrate 240.
  • the insulating substrate 240 has an 8-layer structure as an example for illustration. It is understandable that in other embodiments, the insulating substrate 240 may also have other layers.
  • the insulating substrate 240 includes a core layer 241 and a first wiring layer TM1, a second wiring layer TM2, a third wiring layer TM3, a fourth wiring layer TM4, a fifth wiring layer TM5, a sixth wiring layer TM6, and a seventh wiring layer TM7, and the eighth wiring layer TM8.
  • the first wiring layer TM1, the second wiring layer TM2, the third wiring layer TM3, and the fourth wiring layer TM4 are sequentially stacked on the same surface of the core layer 241, and the first The wiring layer TM1 is disposed away from the core layer 241 relative to the fourth wiring layer TM4, and the surface of the first wiring layer TM1 away from the core layer 241 is the third surface 240a of the insulating substrate 240.
  • the fifth wiring layer TM5, the sixth wiring layer TM6, the seventh wiring layer TM7, and the eighth wiring layer TM8 are sequentially stacked on the same surface of the core layer 241, and the eighth wiring layer
  • the layer TM8 is disposed away from the core layer 241 relative to the fifth wiring layer TM5, and the surface of the eighth wiring layer TM8 away from the core layer 241 is the fourth surface 240b of the insulating substrate 240.
  • the first wiring layer TM1, the second wiring layer TM2, the third wiring layer TM3, and the fourth wiring layer TM4 are wiring layers where an antenna radiator can be provided;
  • the fifth wiring layer TM5 is a ground layer where a ground pole is set;
  • the sixth wiring layer TM6, the seventh wiring layer TM7, and the eighth wiring layer TM8 are the feeder network and control line wiring layers in the antenna module 200.
  • the first antenna radiator 250 is disposed on the surface of the first wiring layer TM1 away from the core layer 241, and the second antenna radiator 260 is disposed on the surface of the third wiring layer.
  • the first antenna radiator 250 is provided on the surface of the first wiring layer TM1 and the second antenna radiator 260 is provided on the third wiring layer TM3 as an example for illustration. Understandably, in other embodiments, the first antenna radiator 250 may be disposed on the surface of the first wiring layer TM1 away from the core layer 241, and the second antenna radiator 260 may be disposed on the The second wiring layer TM2, or the second antenna radiator 260 may be provided on the fourth wiring layer TM4.
  • the first wiring layer TM1, the second wiring layer TM2, the third wiring layer TM3, the fourth wiring layer TM4, the sixth wiring layer TM6, the seventh wiring layer TM7, And the eighth wiring layer TM8 are electrically connected to the ground layer in the fifth wiring layer TM5.
  • Both the eighth wiring layer TM8 and the eighth wiring layer TM8 are provided with through holes, and a metal material is provided in the through holes to electrically connect the ground layer in the fifth wiring layer TM5 to ground the devices provided in each wiring layer 242.
  • the seventh wiring layer TM7 and the eighth wiring layer TM8 are further provided with a power line 271 and a control line 272, and the power line 271 and the control line 272 are electrically connected to the radio frequency chip 230, respectively .
  • the power line 271 is used to provide the radio frequency chip 230 with power required by the radio frequency chip 230
  • the control line 272 is used to transmit control signals to the radio frequency chip 230 to control the operation of the radio frequency chip 230.
  • FIG. 42 is a schematic diagram of an M ⁇ N radio frequency antenna array in an embodiment of this application.
  • the electronic device 1 includes a radio frequency antenna array composed of M ⁇ N antenna components 10, where M is a positive integer and N is a positive integer. Illustrated in the figure is an antenna array composed of 4 ⁇ 1 antenna components 10.
  • the insulating substrate 240 further includes a plurality of metalized via grids 244, and the metalized via grids 244 surround each of the first
  • the antenna radiator 250 is arranged to improve the isolation between two adjacent first antenna radiators 250.
  • FIG. 43 is a schematic diagram of a package structure when the antenna modules in an embodiment of the application form a radio frequency antenna array.
  • the metalized via grid 244 is used to form a radio frequency antenna array on a plurality of antenna modules 200, the metalized via grid 244 is used to improve the isolation between adjacent antenna modules 200 to Reduce or even avoid the interference of millimeter wave signals generated by each antenna module 200.
  • the antenna module 200 described above is described by taking the antenna module 200 as a patch antenna and a laminated antenna as an example. It is understandable that the antenna module 200 may also include a dipole antenna and a magnetoelectric dipole antenna. , Quasi-Yagi antennas, etc.
  • the antenna assembly 10 may include at least one or a combination of a patch antenna, a laminated antenna, a dipole antenna, a magnetoelectric dipole antenna, and a quasi-Yagi antenna. Further, the dielectric substrates 110 in the M ⁇ N antenna assemblies 10 may be connected to each other to form an integrated structure.
  • FIG. 44 is a schematic structural diagram of an electronic device according to a sixth embodiment of this application.
  • the electronic device 1 includes: a first antenna module 210, a dielectric substrate 110, and a first wave-transmitting structure 127.
  • the first antenna module 210 is used to transmit and receive a first radio frequency signal in a first frequency band within a first preset direction range.
  • the dielectric substrate 110 and the first antenna module 210 are spaced apart, and at least part of the dielectric substrate 110 is located in the first predetermined direction range, and the dielectric substrate 110 is located in the first predetermined direction range
  • the part inside has a first equivalent wave impedance for the first radio frequency signal of the first frequency band, and the difference between the first equivalent wave impedance and the wave impedance of the free space is a first difference.
  • the first wave-transmitting structure 127 is carried on the dielectric substrate 110, and at least a part of the first wave-transmitting structure 127 is located within the first preset direction range, and the electronic device 1 is in the first transparent
  • the first radio frequency signal of the first frequency band has a second equivalent wave impedance
  • the difference between the second equivalent wave impedance and the wave impedance of free space is the second difference Value, wherein the second difference is less than the first difference.
  • the range between the dashed line a1 and the dashed line b1 is indicated as the first preset direction range.
  • FIG. 45 is a schematic structural diagram of an electronic device according to a seventh embodiment of this application.
  • the electronic device 1 further includes a second antenna module 220 and a second wave-transmitting structure 128.
  • the second antenna module 220 and the first antenna module 210 are spaced apart and the second antenna module 220 is located outside the first preset direction range, and the second antenna module 220 is used for Transceiving a second radio frequency signal in the second frequency band within the second preset direction range.
  • the dielectric substrate 110 is also spaced apart from the second antenna module 220, at least part of the dielectric substrate 110 is located in the second predetermined direction range, and the dielectric substrate 110 is located in the second predetermined direction range
  • the part inside has a third transmittance for the second radio frequency signal of the second frequency band.
  • the second wave-transmitting structure 128 is carried on the dielectric substrate 110, and at least a part of the second wave-transmitting structure 128 is located within the second preset direction range, and the electronic device 1 is in the second In the region corresponding to the wave-transmitting structure 128, the second radio frequency signal in the first frequency band has a fourth transmittance, wherein the fourth transmittance is greater than the third transmittance.
  • the range between the dashed line a1 and the dashed line b1 is indicated as the first preset direction range.
  • the range between the dashed line a2 and the dashed line b2 is indicated as the second preset direction range.
  • FIG. 46 is a schematic structural diagram of an electronic device provided by an eighth embodiment of this application.
  • the battery cover 30 of the electronic device 1 includes a back plate 310 and a frame 320 bent and extended from the periphery of the back plate 310, wherein the first An antenna module 210 and the second antenna module 220 are both provided corresponding to the back plate 310.
  • the first wave-transmitting structure 127 and the second wave-transmitting structure 128 are both provided corresponding to the back plate 310.
  • FIG. 47 is a schematic structural diagram of an electronic device provided by a ninth embodiment of this application.
  • the electronic device 1 provided in the ninth embodiment is basically the same as the electronic device 1 provided in the eighth embodiment.
  • the first antenna module 210 and the second antenna module 220 are set corresponding to the frame 320.
  • the first wave-transmitting structure 127 and the second wave-transmitting structure 128 are both arranged corresponding to the frame 320.
  • the relative arrangement of the first wave-transmitting structure 127 and the second wave-transmitting structure 128 is taken as an example for illustration.
  • FIG. 48 is a schematic structural diagram of an electronic device according to a tenth embodiment of this application.
  • the electronic device 1 provided in the tenth embodiment is basically the same as the electronic device 1 provided in the eighth embodiment.
  • the difference is that in the tenth embodiment, the first antenna module 210 is provided corresponding to the backplane 310 and The second antenna module 220 is arranged corresponding to the frame 320.
  • the first wave-transmitting structure 127 is provided corresponding to the back plate 310
  • the second wave-transmitting structure 128 is provided corresponding to the frame 320.
  • FIG. 49 is a schematic structural diagram of an electronic device according to an eleventh embodiment of this application.
  • the screen 40 includes a screen main body 410 and an extension 420 extending from the periphery of the screen main body 410, wherein the first antenna module Both 210 and the second antenna module 220 are provided corresponding to the screen body 410.
  • the first wave-transmitting structure 127 and the second wave-transmitting structure 128 are both provided corresponding to the screen body 410.
  • FIG. 50 is a schematic structural diagram of an electronic device according to a twelfth embodiment of this application.
  • the first antenna module 210 and the second antenna module 220 are both provided corresponding to the extension portion 420.
  • the first wave-transmitting structure 127 and the second wave-transmitting structure 128 are both provided corresponding to the extension portion 420.
  • FIG. 51 is a schematic structural diagram of an electronic device according to a thirteenth embodiment of this application.
  • the first antenna module 210 is provided corresponding to the screen body 410
  • the second antenna module 220 is provided corresponding to the extension 420.
  • the first wave-transmitting structure 127 is provided corresponding to the screen main body 410
  • the second wave-transmitting structure 128 is provided corresponding to the extension portion 420.
  • FIG. 52 is a schematic structural diagram of a screen in an electronic device according to a fourteenth embodiment of this application.
  • the dielectric substrate 110 includes the screen 40 of the electronic device 1.
  • the screen 40 includes a display panel 430 and a cover plate 440 that are stacked.
  • the wave-transmitting structure 120 is disposed on the cover plate 440.
  • the so-called screen 40 refers to a component in the electronic device 1 that performs a display function.
  • the display panel 430 may be a liquid crystal display or an organic diode light emitting display.
  • the cover plate 440 is disposed on the display panel 430 to protect the display panel 430.
  • the wave-transmitting structure 120 is disposed on the cover plate 440.
  • the wave-transmitting structure 120 may be provided on the surface of the cover plate 440 close to the display panel 430; or, the wave-transmitting structure 120 may also be provided on the surface of the cover plate 440 away from the display panel 430; or ,
  • the wave-transmitting structure 120 is embedded in the cover plate 440.
  • the cover plate 440 is an independent component, when the wave-transmitting structure 120 is arranged on the cover plate 440 and the wave-transmitting structure 120 is arranged on the surface of the cover plate 440 close to the display screen 100 or is arranged When the cover plate 440 is away from the surface of the display panel 430, the difficulty of combining the wave-transmitting structure 120 with the display screen body 110 can be reduced.
  • the wave-transmitting structure 120 covers the entire area of the cover plate 440 and the wave-transmitting structure 120 is directly disposed on the surface of the cover plate 440 close to the display panel 430 as an example.
  • the display panel 430 includes a color filter substrate 431, an array substrate 432, and a liquid crystal layer 433.
  • the color filter substrate 431 is opposite to the array substrate 432 and is arranged at intervals.
  • the liquid crystal layer 433 is sandwiched between the color filter substrate 431 and the array substrate 432.
  • the color filter substrate 431 is provided with color resist units 431a arranged in a matrix, a black matrix 431b is provided between adjacent color resist units 431a, and at least part of the wave-transmitting structure 120 corresponds to the black matrix 431b settings.
  • At least a part of the wave-transmitting structure 120 is arranged corresponding to the black matrix 431b, so as to reduce the influence of the arrangement of the wave-transmitting structure 120 on the light transmittance of the display panel 430.

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Abstract

本申请提供了一种壳体组件、天线组件及电子设备。所述壳体组件包括介质基板及透波结构。所述介质基板对预设频段的射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值。所述透波结构承载于所述介质基板，并至少部分覆盖所述介质基板的部分区域。所述壳体组件在所述透波结构对应的区域内，对所述预设频段的射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。当所述壳体组件应用于电子设备中时，可降低壳体组件对于设置于所述电子设备内部的天线模组的辐射性能的影响，从而提升所述电子设备的通信性能。

Description

壳体组件、天线组件及电子设备
本申请要求2019年6月30日递交的发明名称为“壳体组件、天线组件及电子设备”的申请号为201910588886.9在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本申请涉及电子设备领域，尤其涉及一种壳体组件、天线组件及电子设备。
背景技术
随着移动通信技术的发展，传统的第四代(4th-Generation，4G)移动通信已经不能够满足人们的要求。第五代(5th-Generation，5G)移动通信由于具有较高的通信速度，可而备受用户青睐。比如，利用5G移动通信传输数据时的传输速度比4G移动通信传输数据的速度快数百倍。毫米波信号是实现5G移动通信的主要手段，然而，当毫米波天线应用于电子设备时，毫米波天线通常设置于电子设备内部的收容空间中，毫米波信号天线透过电子设备而辐射出去的透过率较低，达不到天线辐射性能的要求。或者，外部的毫米波信号穿透电子设备的透过率较低。由此可见，现有技术中，5G毫米波信号的通信性能较差。
发明内容
本申请提供一种壳体组件、天线模组和电子设备，以解决传统的毫米波信号的通信性能差的技术问题。
第一方面，本申请提供一种壳体组件，包括：
介质基板，所述介质基板对预设频段的射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值；
透波结构，所述透波结构承载于所述介质基板，并至少部分覆盖所述介质基板的部分区域；
所述壳体组件在所述透波结构对应的区域内，对所述预设频段的射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。
第二方面，本申请还提供了一种天线组件，所述天线组件包括：天线模组及所述的壳体组件，所述天线模组用于在预设方向范围内收发预设频段的射频信号，所述壳体组件中的透波结构至少部分位于所述预设方向内。
第三方面，本申请还提供了一种电子设备，所述电子设备包括所述的天线组件，其中，所述介质基板包括所述电子设备的电池盖或者屏幕。
第四方面，本申请还提供了一种电子设备，所述电子设备包括：
第一天线模组，所述第一天线模组用于在第一预设方向范围内收发第一频段的第一射频信号；
介质基板，所述介质基板与所述第一天线模组间隔设置，且至少部分所述介质基板位于所述第一预设方向范围内，所述介质基板位于所述第一预设方向范围内的部分对于所述第一频段的第一射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值；
第一透波结构，所述第一透波结构承载于所述介质基板，且所述第一透波结构的至少部分位于所述第一预设方向范围内；
所述电子设备在所述第一透波结构对应的区域内，对所述第一频段的第一射频信号具有第 二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施方式中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本申请一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请第一实施方式提供的壳体组件的结构示意图。
图2为本申请第二实施方式提供的壳体组件的结构示意图。
图3为本申请第三实施方式提供的壳体组件的结构示意图。
图4为本申请第四实施方式提供的壳体组件的结构示意图。
图5为本申请第一实施方式提供的透波结构的示意图。
图6为本申请第五实施方式提供的壳体组件的结构示意图。
图7为本申请第二实施方式提供的透波结构的示意图。
图8为本申请第三实施方式提供的透波结构的示意图。
图9为本申请第四实施方式提供的透波结构剖面结构示意图。
图10为本申请第四实施方式中提供的透波结构中第一透波层的结构示意图。
图11为本申请第四实施方式中提供的透波结构中第二透波层的结构示意图。
图12为本申请第四实施方式提供的透波结构的等效电路图。
图13为本申请第一实施方式提供的天线组件的结构示意图。
图14为天线模组在0.7mm的传统玻璃电池盖下时在20～34GHz内的反射曲线及透射曲线示意图。
图15为天线模组在设置有透波结构的电池盖下的反射曲线示意图。
图16为天线模组在设置有透波结构的电池盖下的透射曲线示意图。
图17为本申请第一实施方式提供的电子设备的结构示意图。
图18为图17中沿I-I线的剖面结构示意图。
图19为天线模组在自由空间下的驻波示意图。
图20为天线模组在自由空间下的方向图。
图21为天线模组在传统电池盖下的驻波示意图。
图22为天线模组在传统电池盖下的方向图。
图23为天线模组在本申请的电池盖下的驻波示意图。
图24为天线模组在本申请的电池盖下的方向示意图。
图25为本申请第五实施方式提供的透波结构中的第一透波层的示意图。
图26为本申请第六实施方式提供的透波结构中第一透波层的结构示意图。
图27为本申请第七实施方式提供的透波结构中第一透波层的结构示意图。
图28为本申请第八实施方式提供的透波结构中第一透波层的结构示意图。
图29为本申请第九实施方式提供的透波结构的结构示意图。
图30为本申请第十实施方式提供的透波结构的结构示意图。
图31为本申请第十一实施方式提供的透波结构的结构示意图。
图32为本申请第二实施方式提供的电子设备的结构示意图。
图33为图32中沿II-II线的剖面结构示意图。
图34为本申请第三实施方式提供的电子设备的结构示意图。
图35为图34中沿III-III线的剖面结构示意图。
图36为本申请第四实施方式提供的电子设备的结构示意图。
图37为图36中沿IV-IV线的剖面结构示意图。
图38为本申请第五实施方式提供的电子设备的结构示意图。
图39为图38中沿V-V线的剖面结构示意图。
图40为本申请一实施方式中的天线模组的剖面结构示意图。
图41为本申请另一实施方式中的天线模组的剖面结构示意图。
图42为本申请一实施方式中为M×N射频天线阵列示意图。
图43为本申请一实施方式中的天线模组组成射频天线阵列时的封装结构示意图。
图44为本申请第六实施方式提供的电子设备的结构示意图。
图45为本申请第七实施方式提供的电子设备的结构示意图。
图46为本申请第八实施方式提供的电子设备的结构示意图。
图47为本申请第九实施方式提供的电子设备的结构示意图。
图48为本申请第十实施方式提供的电子设备的结构示意图。
图49为本申请第十一实施方式提供的电子设备的结构示意图。
图50为本申请第十二实施方式提供的电子设备的结构示意图。
图51为本申请第十三实施方式提供的电子设备的结构示意图。
图52为本申请第十四实施方式提供的电子设备中屏幕的结构示意图。
具体实施方式
第一方面，本申请提供一种壳体组件，包括：
介质基板，所述介质基板对预设频段的射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值；
透波结构，所述透波结构承载于所述介质基板，并至少部分覆盖所述介质基板的部分区域；
所述壳体组件在所述透波结构对应的区域内，对所述预设频段的射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。
在第一方面的第一种实施方式中，所述壳体组件还包粘结层，所述粘结层设置在所述透波结构与所述介质基板之间，以将所述透波结构粘结于所述介质基板。
结合第一方面的第一种实施方式，在第二种实施方式中，所述壳体组件还包括承载膜，所述承载膜用于承载所述透波结构，且所述承载膜设置在所述透波结构背离所述粘结层的一侧。
结合第一方面的第二种实施方式，在第三种实施方式中，所述承载膜的厚度越大，所述预设频段越往低频偏移。
在第一方面的第四种实施方式中，所述介质基板包括相对设置的第一表面及第二表面，所述透波结构设置于所述第一表面；或者，所述透波结构设置于第二表面，或者，所述透波结构内嵌于所述介质基板。
在第一方面的第五种实施方式中，所述透波结构包括多条沿第一方向间隔排布的导电线路及多条沿第二方向间隔排布的导电线路，且所述沿第一方向间隔排布的导电线路与所述沿第二方向间隔排布的导电线路相互交叉设置，并共同形成多个阵列排布的网格结构。
在第一方面的第六种实施方式中，所述透波结构包括多个阵列设置的网格结构，每一个所述网格结构由至少一条导电线路围成，相邻的两个所述网格结构至少复用部分所述导电线路。
结合第一方面的第六种实施方式，在第七种实施方式中，所述网格结构的形状为圆形、矩形、三角形、多边形、椭圆形中的任意一种。
结合第一方面的第五种至第七种实施方式中的任意一种实施方式，在第八种实施方式中，所述预设频段随着所述导电线路的宽度减小而往低频偏移，且带宽增大；所述预设频段随着所述网格结构的边长或内径增大而往低频偏移，且带宽增大；所述预设频段随着所述介质基板的厚度增大而段往低频偏移，且带宽减小。
第二方面，本申请提供一种天线组件，所述天线组件包括：天线模组及如第一方面、第一方面第一种实施方式至第八种实施方式中的任意一种实施方式所述的壳体组件，所述天线模组用于在预设方向范围内收发预设频段的射频信号，所述壳体组件中的透波结构至少部分位于所述预设方向内。
第三方面，本申请提供一种电子设备，其特征在于，所述电子设备包括如第二方面所述的天线组件，其中，所述介质基板包括所述电子设备的电池盖或者屏幕。
在第三方面的第一种实施方式中，当所述介质基板包括所述电子设备的电池盖时，所述电子设备的电池盖包括背板及自所述背板周缘弯折延伸的边框，所述透波结构对应所述背板设置，或者所述透波结构对应所述边框设置。
在第三方面的第二种实施方式中，当所述介质基板包括所述电子设备的屏幕时，所述屏幕包括屏幕主体及自所述屏幕主体周缘弯曲延伸的延伸部，所述透波结构对应所述屏幕主体设置，或者，所述透波结构对应所述延伸部设置。
在第三方面的第三种实施方式中，当所述介质基板包括电子设备的屏幕时，所述屏幕包括层叠设置的显示面板及盖板，所述透波结构设置于所述盖板上。
结合第三方面的第三种实施方式，在第四种实施方式中，所述透波结构设置在所述盖板面对所述显示面板的表面上。
结合第三方面的第四种实施方式，在第五种实施方式中，所述显示面板包括彩膜基板，所述彩膜基板上设置有矩阵排布的色阻单元，相邻的色阻单元之间设置有黑矩阵，所述透波结构的至少部分对应所述黑矩阵设置。
在第四方面，本申请提供一种电子设备，所述电子设备包括：
第一天线模组，所述第一天线模组用于在第一预设方向范围内收发第一频段的第一射频信号；
介质基板，所述介质基板与所述第一天线模组间隔设置，且至少部分所述介质基板位于所述第一预设方向范围内，所述介质基板位于所述第一预设方向范围内的部分对于所述第一频段的第一射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值；
第一透波结构，所述第一透波结构承载于所述介质基板，且所述第一透波结构的至少部分位于所述第一预设方向范围内；
所述电子设备在所述第一透波结构对应的区域内，对所述第一频段的第一射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。
在第四方面的第一种实施方式中，所述电子设备还包括：
第二天线模组，所述第二天线模组与所述第一天线模组间隔设置且所述第二天线模组位于所述第一预设方向范围之外，所述第二天线模组用于在第二预设方向范围内收发第二频段的第二射频信号；
所述介质基板还与所述第二天线模组间隔设置，至少部分所述介质基板位于所述第二预设方向范围内，所述介质基板位于所述第二预设方向范围内的部分对于所述第二频段的第二射频信号具有第三等效波阻抗，所述第三等效波阻抗与自由空间的波阻抗之间的差值为第三差值；
第二透波结构，所述第二透波结构被承载与所述介质基板，且所述第二透波结构的至少部分位于所述第二预设方向范围内；
所述电子设备在所述第二透波结构对应的区域内，对所述第二频段的第二射频信号具有第四等效波阻抗所述第四等效波阻抗与自由空间的波阻抗之间的差值为第四差值，其中，所述第四差值小于所述第三差值。
结合第四方面的第一种实施方式，在第二种实施方式中，所述介质基板包括所述电子设备的电池盖，所述电子设备的电池盖包括背板及自所述背板周缘弯折延伸的边框，其中，所述第 一天线模组及所述第二天线模组均对应所述背板设置；或者，所述第一天线模组及所述第二天线模组均对应所述边框设置；或者，所述第一天线模组对应所述背板设置且所述第二天线模组对应所述边框设置。
结合第四方面的第一种实施方式，在第三种实施方式中，所述介质基板包括所述电子设备的屏幕，所述屏幕包括屏幕主体和自所述屏幕主体周缘弯曲延伸的延伸部，其中，所述第一天线模组及所述第二天线模组均对应所述屏幕主体设置；或者，所述第一天线模组及所述第二天线模组均对应所述延伸部设置；或者，所述第一天线模组对应所述屏幕主体设置，所述第二天线模组对应所述延伸部设置。
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有付出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请一并参阅图1，图1为本申请第一实施方式提供的壳体组件的结构示意图。所述壳体组件100包括介质基板110及透波结构120。所述介质基板110对预设频段的射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值。所述透波结构120承载于所述介质基板110，并至少覆盖所述介质基板110的部分区域。所述壳体组件100在所述透波结构120对应的区域内，对所述预设频段的射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。
在图1中以所述透波结构120覆盖于所述介质基板110的全部区域为例进行示意。所述射频信号可以为但不仅限于为毫米波频段的射频信号或者太赫兹频段的射频信号。目前，在第五代移动通信技术(5th generation wireless systems，5G)中，根据3GPP TS 38.101协议的规定，5G新空口(new radio，NR)主要使用两段频率：FR1频段和FR2频段。其中，FR1频段的频率范围是450MHz～6GHz，又叫sub-6GHz频段；FR2频段的频率范围是24.25GHz～52.6GHz，属于毫米波(mm Wave)频段。3GPP Release 15版本规范了目前5G毫米波频段包括：n257(26.5～29.5GHz),n258(24.25～27.5GHz),n261(27.5～28.35GHz)和n260(37～40GHz)。
所述透波结构120可以具有单频单极化、单频双极化、双频双极化、双频单极化、宽频单极化、宽频双极化等特性中的任意一种特性。相应地，所述透波结构120具有双频谐振响应，或者单频谐振响应，或者宽频谐振响应，或者多频谐振响应中的任意一种。所述透波结构120的材质可以为金属材质，也可以为非金属导电材质。
一方面，所述介质基板110上的透波结构120被所述预设频段的射频信号的激励，所述透波结构120根据所述预设频段的射频信号产生与所述预设频段同频段的射频信号，且穿透所述介质基板110并辐射至自由空间中。由于所述透波结构120被激励且产生与所述预设频段同频段的射频信号，因此，透过所述介质基板110并辐射至自由空间中的预设频段的射频信号的量增加。
另一方面，所述壳体组件100包括了透波结构120及介质基板110，因此，所述壳体组件100的介电常数可以等效为预设材料的介电常数，而所述预设材料的介电常数对所述预设频段的射频信号的透过率较高，且所述预设材料的等效波阻抗等于或者近似等于自由空间的等效波阻抗。
本申请提供的壳体组件100通过将所述透波结构120承载于所述介质基板110上，通过所述透波结构120的作用使得壳体组件100对预设频段的等效波阻抗与自由空间的波阻抗之间的差值减小，从而使得所述壳体组件100对预设频段的射频信号的透过率提升，当所述壳体组件100应用于电子设备中时，可降低所述壳体组件100对设置于所述壳体组件100内部的天线模组的辐射性能的影响，从而提升所述电子设备的通信性能。
进一步地，所述介质基板110包括相对设置的第一表面110a及第二表面110b，所述透波结 构120设置在所述第一表面110a。当所述壳体组件100应用于电子设备中时，所述电子设备还包括天线模组200，所述第一表面110a相较于所述第二表面110b背离所述天线模组200设置。
进一步地，所述壳体组件100还包括所述壳体组件还包粘结层140。所述粘结层140设置在所述透波结构120与所述介质基板110之间，以将所述透波结构120粘结于所述介质基板110上。在图中以所述透波结构120通过所述粘结层140粘结在所述介质基板110的第一表面110a且完全覆盖所述第一表面110a为例进行示意。可以理解地，在其他实施方式中，所述透波结构120也可直接设置在所述介质基板110的第一表面110a上或者直接设置在所述介质基板110的第二表面110b上。在其他实施方式中，手上透波结构120也可内嵌在所述介质基板110内。
请参阅图2，图2为本申请第二实施方式提供的壳体组件的结构示意图。所述壳体组件100包括介质基板110及透波结构120。所述介质基板110对预设频段的射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值。所述透波结构120承载于所述介质基板110，并至少覆盖所述介质基板110的部分区域；所述壳体组件100在所述透波结构120对应的区域内，对所述预设频段的射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。进一步地，在本实施方式中，所述透波结构120设置于所述第二表面110b。当所述壳体组件100应用于电子设备中时，所述电子设备还包括天线模组200，所述第一表面110a相较于所述第二表面110b背离所述天线模组200设置。
请参阅3，图3为本申请第三实施方式提供的壳体组件的结构示意图。所述壳体组件100包括介质基板110及透波结构120。所述介质基板110对预设频段的射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值。所述透波结构120承载于所述介质基板110，并至少覆盖所述介质基板110的部分区域；所述壳体组件100在所述透波结构120对应的区域内，对所述预设频段的射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。在本实施方式中，所述透波结构120内嵌于所述介质基板110内。当所述壳体组件100应用于电子设备1中时，所述电子设备1还包括天线模组200，所述第一表面110a相较于所述第二表面110b背离所述天线模组200设置。
请参阅图4，图4为本申请第四实施方式提供的壳体组件的结构示意图。所述壳体组件100包括介质基板110及透波结构120。所述介质基板110对预设频段的射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值。所述透波结构120承载于所述介质基板110，并至少覆盖所述介质基板110的部分区域；所述壳体组件100在所述透波结构120对应的区域内，对所述预设频段的射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。进一步地，所述壳体组件100还包括承载膜130，所述承载膜130用于承载所述透波结构120。所述承载膜130设置在所述透波结构120背离所述粘结层140的一侧。所述承载膜130可以为但不仅限于为塑料(Polyethylene terephthalate，PET)薄膜、柔性电路板、印刷电路板等。所述PET薄膜可以为但不仅限于为彩色膜、防爆膜等。具体地，所述透波结构120制备在所述承载膜130上，在所述透波结构120的制备过程中，所述承载膜130起到支撑作用，在所述透波结构120制备完毕之后，再通过所述粘结层140粘结在所述介质基板110上。所述承载膜130设置在所述透波结构120背离所述粘结层140的一侧，可以对所述透波结构120进行保护。进一步地，所述介质基板110包括相对的第一表面110a及第二表面110b，所述第一表面110a相较于所述第二表面110b背离所述天线模组200设置。在本实施方式的示意图中以所述透波结构120通过所述粘结层140贴合于所述第二表面110b上为例进行示意，可以理解地，在其他实施方式中，所述透波结构120也可通过所述粘结层140贴合于所述第一表面110a上。经过实验测算，所述承载膜130的厚度越大，所述预设频段越往低频偏移。
进一步地，请参阅图5，图5为本申请第一实施方式提供的透波结构的示意图。所述透波结 构120包括一层或者多层透波层120a，当所述透波结构120包括多层透波层120a时，所述多层透波层120a在预设方向上层叠且间隔设置。当所述透波结构120包括多层透波层120a时，相邻的两层透波层120a之间设置有介质层110c，所有的介质层110c构成所述介质基板110。图5中以所述透波结构120包括三层透波层120a，两层介质层110c为例进行示意。进一步地，所述预设方向与所述射频信号的主瓣方向平行。所谓主瓣，是指射频信号中辐射强度最大的波束。
请一并参阅图6，图6为本申请第五实施方式提供的壳体组件的结构示意图。所述介质基板110包括相对设置的第一表面110a及第二表面110b，部分所述透波结构120设置于所述第一表面110a，剩余的所述透波结构120内嵌于所述介质基板110。当所述壳体组件100应用于电子设备中时，所述电子设备还包括天线模组200，所述第一表面110a相较于所述第二表面110b背离所述天线模组200设置。
结合前述任意实施方式提供的壳体组件100，所述透波结构120为金属材质，或者非金属导电材质。
结合前述任意实施方式提供的壳体组件100，所述介质基板110的材料为塑料、玻璃、蓝宝石、陶瓷的至少一种或者多种组合。
请参阅图7，图7为本申请第二实施方式提供的透波结构的示意图。所述透波结构120可结合到前述任意实施方式提供的壳体组件100中所述透波结构120包括多个谐振单元120b，所述谐振单元120b周期性排布。
请参阅图8，图8为本申请第三实施方式提供的透波结构的示意图。所述透波结构120可结合到前述任意实施方式提供的壳体组件100中，所述透波结构120包括多个谐振单元120b，所述谐振单元120b非周期性排布。
请一并参阅图9、图10及图11，图9为本申请第四实施方式提供的透波结构剖面结构示意图；图10为本申请第四实施方式中提供的透波结构中第一透波层的结构示意图；图11为本申请第四实施方式中提供的透波结构中第二透波层的结构示意图。所述透波结构120可以结合到前述任意实施方式提供的壳体组件100中。所述透波结构120包括间隔设置的第一透波层121、第二透波层122、及第三透波层123，所述介质基板110包括第一介质层111及第二介质层112，所述第一透波层121、所述第一介质层111、所述第二透波层122、所述第二介质层112、及所述第三透波层123依次层叠设置。所述第一透波层121包括阵列排布的多个第一贴片1211，所述第二透波层122包括周期性排布的网格结构1221，所述第三透波层123包括阵列排布的多个第二贴片1231。第一贴片1211或第二贴片1231的尺寸L1越小，所述预设频段往低频偏移，且带宽减小。所述第二透波层122中网格结构1221的导电线路的宽度W1越小，所述预设频段往低频偏移，且带宽增大；所述透波结构120的周期P越大，所述预设频段往高频偏移，且带宽增大；所述透波结构120的厚度越大，所述预设频段往低频偏移，带宽减小；所述介质基板110的介电常数越大，所述预设频段往低频偏移，且带宽减小。在本实施方式中，一个网格结构1221对应四个第一贴片1211，且一个网格接1221对应四个第三贴片1231，并作为透波结构1221的一个周期。
请一并参阅图12，图12为本申请第四实施方式提供的透波结构的等效电路图。在此等效电路图中忽略了对预设频段影响较小的因素，比如，第一透波层121层的电感量，所述第三透波层123的电感量，以及第二透波层122的电容量。其中，第一透波层121等效为电容C1，第二透波层122等效为电容C2，所述第一透波层121与所述第二透波层122的耦合电容等效为电容C3，第三透波层123等效为电感L。另外Z0表示自由空间的阻抗，Z1表示介质基板110的阻抗，其中，Z1＝Z0/(Dk) 1/2，那么，所述预设频段的中心频率f0为：f0＝1/[2π/(LC) 1/2]，带宽Δf/f0正比于(L/C) 1/2。由此可见，所述第一贴片1211或第二贴片1231的尺寸越小，所述预设频段往低频偏移，且带宽减小。所述第二透波层122中网格结构1221的宽度越小，所述预设频段往低频偏移，且带宽增大；所述透波层120a的周期越大，所述预设频段往高频偏移，且带宽增大；所述透波层120a的厚度越大，所述预设频段往低频偏移，带宽减小；所述介质基板110的介电 常数越大，所述预设频段往低频偏移，且带宽减小。
当所述第一介质层111及所述第二介质层112的材质为玻璃时，所述玻璃的介电常数通常为6～7.6之间，当所述预设频段为20～35GHz范围的情况下，第一贴片1211的尺寸范围通常选择为0.5～0.8mm之间，第二透波结构128中网格中实体部分的宽度通常选择为0.1～0.5mm之间，一个周期通常为1.5～3.0mm，当所述透波结构120应用于电子设备的电池盖时，天线模组200的上表面到电池盖的内表面之间的间隙通常选择大于等于零即可，通常选择为0.5～1.2mm。
请参阅图13，图13为本申请第一实施方式提供的天线组件的结构示意图。所述天线组件10包括：天线模组200及壳体组件100。所述天线模组200用于在预设方向范围内收发预设频段的射频信号，所述壳体组件100中的透波结构120至少位于所述预设方向内。所述壳体组件100请参阅前述各个实施方式介绍的壳体组件100，在此不再赘述。为了方便示意图，本实施方式中所示的天线组件10以第一实施方式所示的壳体组件100为例进行示意。
请参阅图14，图14为天线模组在0.7mm的传统玻璃电池盖下时在20～34GHz内的反射曲线及透射曲线示意图。传统的玻璃电池盖上未设置有本申请的透波结构120。在图14中，横轴为频率，单位为GHz；纵轴为增益，单位为dB。曲线①为反射系数曲线，由曲线①可见，在20～34GHz频段内，增益均在-10dB以上，即，射频信号的反射较大，且越往高频，反射越增大。曲线②为透射系数曲线，由曲线②可见，在22～30GHz频段范围内，增益损失达到-2.3dB以上。综合曲线①及曲线②可见，天线模组在传统的玻璃电池盖下的反射较大且透射损失较大。
请一并参阅图15及图16，图15为天线模组在设置有透波结构的电池盖下的反射曲线示意图；图16为天线模组在设置有透波结构的电池盖下的透射曲线示意图。在图15中，横轴为频率，单位为GHz；纵轴为增益，单位为dB，曲线中增益小于等于-10dB以下时的频率具有较小的反射系数，因此，通常定义增益小于等于-10dB的频段为所述天线模组的工作频段。由图15中的曲线可见，所述天线模组200的工作频段为22.288～30.511GHz。在图16中，横轴为频率，单位为GHz；纵轴为增益，单位为dB，当曲线中增益大于-1dB以上的频段为天线模组200在此频段中具有良好的透射系数，由图16中的曲线可见，所述天线模组200在22.148～29.538GHz具有良好的透射系数。
请一并参阅图17及图18，图17为本申请第一实施方式提供的电子设备的结构示意图；图18为图17中沿I-I线的剖面结构示意图。所述电子设备1包括天线组件10，所述天线组件10请参前面描述，在此不再赘述。其中，所述介质基板110包括所述电子设备1的电池盖30。所述电池盖30与所述屏幕40围设成收容空间，所述收容空间用于收容所述电子设备1的功能器件。所述电子设备包括前面任意实施方式所述的天线组件10。
进一步地，请再次参阅图17及图18，当所述介质基板110包括所述电子设备1的电池盖30时，所述电子设备1的电池盖30包括背板310及自所述背板310周缘弯折延伸的边框320，所述透波结构120对应所述背板310设置。
所述电子设备1包括但不仅限于智能手机、互联网设备(mobile internet device，MID)、电子书、便携式播放站(Play Station Portable,PSP)或个人数字助理(Personal Digital Assistant，PDA)等具有呼吸灯功能的电子设备1。下面对本申请所提供的电子设备1进行详细描述。
请一并参阅图19及图20，图19为天线模组在自由空间下的驻波示意图；图20为天线模组在自由空间下的方向图。图中以天线模组200为2×2阵列为例进行仿真。图16中横轴为频率，单位为GHz；纵轴为增益，单位为dB，驻波曲线中小于等于-10dB以下的频段为所述天线模组的工作频段，由图19可见，所述天线模组的工作频段为在26.71-～29.974GHz之间。由图20可见，天线模组在27GHz，28GHz以及29GHz均具有良好的增益，其中，天线模组200在27GHz的增益为9.73dB，所述天线模组200在28GHz的增益为10.1dB，述天线模组200在29GHz的增益为10.3dB。由此可见，所述天线模组200在27GHz、28GHz、及29GHz的增益较大。需要说明的是，由于2×2阵列的天线模组200的对称化设计，在自由空间中，2×2阵列的天线模组200中四个天线单元的驻波参数曲线重合了。图中所标示的S11、S22、S33、S44分别表征2×2 阵列的天线模组200中四个天线单元的回波损耗。
请一并参阅图21及图22，图21为天线模组在传统电池盖下的驻波示意图；图22为天线模组在传统电池盖下的方向图。图中以天线模组200为2×2阵列为例进行仿真。图21中横轴为频率，单位为GHz；纵轴为增益，单位为dB，驻波曲线中增益小于等于-10dB以下的频段为所述天线模组的工作频段。由图21可见，在24～32GHz频段射频信号的驻波均为-10dB以上，由此可见，在24～32GHz频段射频信号反射很大。由图22可见，天线模组200在27GHz的增益为5.58dB，在28GHz的增益为6.68dB，在29GHz的增益为7.12dB，由此可见，天线模组在传统的电池盖下的反射系数较大且增益较小。
需要说明的是，由于2×2阵列的天线模组200的对称化设计，在图中，2×2阵列的天线模组200中驻波参数曲线S11和驻波参数曲线S33重合了，驻波参数曲线S22和驻波参数曲线S44重合了。图中所标示的S11、S22、S33、S44分别表征2×2阵列的天线模组200中四个天线单元的回波损耗。
请一并参阅图23及图24，图23为天线模组在本申请的电池盖下的驻波示意图；图24为天线模组在本申请的电池盖下的方向示意图。图中以天线模组200为2×2阵列为例进行仿真。图23中横轴为频率，单位为GHz；纵轴为增益，单位为dB，驻波曲线中小于等于-10dB以下的频段为所述天线模组的工作频段。由图23中的驻波曲线可见所述天线模组200具有较宽的工作频段。由图24可见，天线模组200在27GHz的增益为9.55dB，天线模组200在28GHz的增益为10.1dB，在29GHz的增益为10.6dB。由此可见，天线模组200在本申请的电池盖30下具有较宽的工作频段以及具有较好的增益，和天线模组200在自由空间中的工作频段几乎一致，且和自由空间中的增益几乎一致。
需要说明的是，由于2×2阵列的天线模组200的对称化设计，在图中，2×2阵列的天线模组200中驻波参数曲线S11和驻波参数曲线S33重合了，驻波参数曲线S22和驻波参数曲线S44重合了。图中所标示的S11、S22、S33、S44分别表征2×2阵列的天线模组200中四个天线单元的回波损耗。
请参阅图25，图25为本申请第五实施方式提供的透波结构中的第一透波层的示意图。本实施方式提供的透波结构120与第四实施方式提供的透波结构120基本相同，不同之处在于，在第四实施方式中，第一贴片1211为矩形贴片，在本实施方式中，所述第一透波层121包括阵列排布的多个第一贴片1211，所述第一贴片1211为圆形。可选地，圆形的所述第一贴片1211的直径D的范围为0.5～0.8mm。
在本实施方式中，所述第三透波层123包括阵列排布的多个第二贴片1231，所述第二贴片1231为圆形。可选地，所述圆形的所述第二贴片1231的直径D的范围为0.5～0.8mm。可以理解地，所述第三透波层123的结构可与所述第一透波层121的结构相同。
请参阅图26，图26为本申请第六实施方式提供的透波结构中第一透波层的结构示意图。本实施方式提供的透波结构120与第四实施方式提供的透波结构120基本相同，不同之处在于，在第四实施方式中，所述第一贴片1211为矩形贴片，在本实施方式中，所述第一透波层121包括阵列排布的多个第一贴片1211，所述第一贴片1211为圆环形。当所述第一贴片1211的材质为金属时，所述第一贴片1211为圆环形从而可以提升所述透波结构120的透明度。所述圆环形的第一贴片1211的尺寸的直径Do通常为0.5～0.8mm，圆环形的所述第一贴片1211的内径Di，通常而言，Do-Di的值越小，所述透波结构120的透明度越高，但是插入损耗越大。为了兼顾所述透波结构120的透明度及插入损耗，所述Do-Di的取值通常为：Do-Di≥0.5mm。可以理解地，所述第三透波层123的结构可与所述第一透波层121的结构相同。
请参阅图27，图27为本申请第七实施方式提供的透波结构中第一透波层的结构示意图。本实施方式提供的透波结构120与第四实施方式提供的透波结构120基本相同，不同之处在于，在第四实施方式中，所述第一贴片1211为矩形贴片，在本实施方式中，所述第一透波层121包括阵列排布的多个第一贴片1211，所述第一贴片1211为正方形环状贴片。所述正方形的第一贴 片1211的边长为Lo通常为0.5～0.8mm，正方形环状贴片的内变成为Li，通常而言，Lo-Li的值越小，透明度越高，但是插入损耗越大。为了兼顾所述透波结构120的透明度及插入损耗，所述Do-Di的取值通常为：Lo-Li≥0.5mm。可以理解地，所述第三透波层123的结构可与所述第一透波层121的结构相同。
请参阅图28，图28为本申请第八实施方式提供的透波结构中第一透波层的结构示意图。本实施方式提供的透波结构120包括阵列排布的多个第一贴片1211，每个第一贴片1211均为正方形的金属网格贴片(mesh grid)。具体地，所述第一贴片1211包括多个第一分支1212以及多个第二分支1213，所述多个第一分支1212间隔排布，所述多个第二分支1213间隔排布，且所述第二分支1213与所述第一分支1212交叉设置且连接。可选地，所述第一分支1212沿着第一方向延伸且所述多个第一分支1212沿所述第二方向间隔排布。可选地，所述第二分支1213与所述第一分支1212垂直交叉。可选地，所述第一贴片1211的边长为：0.5～0.8mm。
请参阅29，图29为本申请第九实施方式提供的透波结构的结构示意图。在本实施方式中，所述透波结构120包括多条沿第一方向间隔排布的导电线路151及多条沿第二方向间隔排布的导电线路161，且所述沿第一方向间隔排布的导电线路151与所述沿第二方向间隔排布的导电线路161相互交叉设置，并共同形成多个阵列排布的网格结构163。
具体地，沿第一方向间隔排布的两个导电线路151与沿所述第二方向间隔排布的两个导电线路161交叉形成一个所述网格结构163。可以理解地，在一实施方式中，所述第一方向垂直于所述第二方向。在其他实施方式中，所述第一方向不垂直于所述第二方向。可以理解地，在第一方向间隔排布的多个导电线路151中，相邻的两个导电线路151之间的间距可以相同，也可以不相同。相应地，在第二方向间隔排布的多个导电线路151中，相邻的两个导电线路151之间的间距可以相同，也可以不相同。相邻的两个导电线路151之间的间距与相邻的两个导电线路151之间的间距可以相同也可以不相同。在图中，以所述第一方向垂直于所述第二方向且相邻的两个导电线路151之间的间距等于相邻的两个导电线路161之间的间距为例进行示意。
进一步地，所述预设频段随着所述导电线路151(161)的宽度减小而往低频偏移，且带宽增大。所述预设频段随着网格结构163的边长或内增大而往低频偏移，且带宽增大。所述预设频段随着所述透波结构120设置的所述介质基板110的厚度增增大而往低频偏移，且带宽减小。
请参阅图30，图30为本申请第十实施方式提供的透波结构的结构示意图。所述透波结构120包括多个阵列设置的网格结构163。每一个所述网格结构163由至少一个导电线路151围成，相邻的两个所述网格结构163至少复用部分所述导电线路151。
具体地，所述网格结构163的形状可以为但不仅限于为圆形、矩形、三角形、多边形、椭圆形中的任意一种，其中，当所述网格结构163的形状为多边形时，所述网格结构163的边的个数为大于3的正整数。在图30中以所述网格结构163的形状为三角形为例进行示意。
进一步地，所述预设频段随着所述导电线路151(161)的宽度减小而往低频偏移，且带宽增大。所述预设频段随着网格结构163的边长或内增大而往低频偏移，且带宽增大。所述预设频段随着所述透波结构120设置的所述介质基板110的厚度增大而往低频偏移，且带宽减小。
当所述网格结构163的形状为三角形时，所述网格结构163的周期为所述所述网格结构163的边长。当所述网格结构163为多边形时，所述网格结构163的周期为所述网格结构163的内径。
请参阅图31，图31为本申请第十一实施方式提供的透波结构的结构示意图。在图31中以所述网格结构163的形状为正六边形为例进行示意。进一步地，所述预设频段随着所述导电线路151(161)的宽度减小而往低频偏移，且带宽增大。所述预设频段随着网格结构163的边长或内增大而往低频偏移，且带宽增大。所述预设频段随着所述透波结构120设置的所述介质基板110的厚度增增大而往低频偏移，且带宽减小。
请一并参阅图32及图33，图32为本申请第二实施方式提供的电子设备的结构示意图；图33为图32中沿II-II线的剖面结构示意图。所述电子设备1包括天线组件10，所述天线组件10 请参前面描述，在此不再赘述。其中，所述介质基板110包括所述电子设备1的电池盖30。所述电子设备1的电池盖30包括背板310及自所述背板310周缘弯折延伸的边框320，所述透波结构120对应所述边框320设置。
请一并参阅图34及图35，图34为本申请第三实施方式提供的电子设备的结构示意图；图35为图34中沿III-III线的剖面结构示意图。所述电子设备1包括天线组件10，所述天线组件10请参前面描述，在此不再赘述。在本实施方式中，所述介质基板110包括所述电子设备1的屏幕40。
进一步地，当所述介质基板110包括所述电子设备1的屏幕40时，所述屏幕40包括屏幕主体410及自所述屏幕主体410周缘弯曲延伸的延伸部420，所述透波结构120对应所述屏幕主体410设置。
请参阅图36及图37，图36为本申请第四实施方式提供的电子设备的结构示意图；图37为图36中沿IV-IV线的剖面结构示意图。所述电子设备1包括天线组件10，所述天线组件10请参前面描述，在此不再赘述。在本实施方式中，所述介质基板110包括所述电子设备1的屏幕40。所述屏幕40包括屏幕主体410及自所述屏幕主体410周缘弯曲延伸的延伸部420，所述透波结构120对应所述延伸部420设置。
请参阅图38及图39，图38为本申请第五实施方式提供的电子设备的结构示意图；图39为图38中沿V-V线的剖面结构示意图。所述电子设备1包括天线组件10，所述天线组件10请参前面描述，在此不再赘述。所述电子设备1包括电池盖30及保护套50，所述保护套50覆盖在所述电池盖30的表面以对所述电池盖30进行保护，所述介质基板110包括所述保护套50。所述透波结构120对应所述保护套50设置。
请参阅图40，图40为本申请一实施方式中的天线模组的剖面结构示意图。所述天线模组200包括射频芯片230、绝缘基板240、及一个或多个第一天线辐射体250。所述射频芯片230用于产生激励信号(也称为射频信号)。所述射频芯片230相较于所述一个或多个第一天线辐射体250背离所述带透波结构120设置，所述绝缘基板240用于承载所述一个或多个第一天线辐射体250，所述射频芯片230通过内嵌于所述绝缘基板240中的传输线与所述一个或多个第一天线辐射体250电连接。具体地，所述绝缘基板240包括相背的第三表面240a和第四表面240b，所述绝缘基板240用于承载所述一个或多个第一天线辐射体250包括所述绝缘基板240设置在所述第三表面240a，或者，所述一个或多个第一天线辐射体250内嵌于所述绝缘基板240内。在本实施方式中的示意图中以所述一个或多个第一天线辐射体250设置于所述第三表面240a，所述射频芯片230设置于所述第四表面240b为例进行示意。所述射频芯片230产生的所述激励信号通过内嵌于所述绝缘基板240中的传输线传输与所述一个或多个第一天线辐射体250电连接。所述射频芯片230可焊接在所述绝缘基板240上，以将所述激励信号经由内嵌于绝缘基板240中的传输线传输至第一天线辐射体250。所述第一天线辐射体250接收所述激励信号，并根据所述激励信号产生毫米波信号。所述第一天线辐射体250可以为但不仅限于为贴片天线。
进一步地，所述射频芯片230相较于所述第一天线辐射体250背离所述透波结构120，且所述射频芯片230输出所述激励信号的输出端位于所述绝缘基板240背离所述透波结构120的一侧。即，所述射频芯片230邻近所述绝缘基板240的第四表面240b而远离所述绝缘基板240的第三表面240a设置。
进一步地，每一个所述第一天线辐射体250包括至少一个馈电点251，每一个所述馈电点251均通过所述传输线与所述射频芯片230电连接，每一个所述馈电点251与所述馈电点251对应的第一天线辐射体250的中心之间的距离大于预设距离。调整所述馈电点251的位置可以改变所述第一天线辐射体250的输入阻抗，本实施方式中通过设置每一个所述馈电点251与对应的第一天线辐射体250的中心之间的距离大于预设距离，从而调整所述第一天线辐射体250的输入阻抗。调整所述第一天线辐射体250的输入阻抗以使得所述第一天线辐射体250的输入阻抗与所述射频芯片230的输出阻抗匹配，当所述第一天线辐射体250与所述射频芯片230的 输出阻抗匹配时，所述射频信号产生的激励信号的反射量最小。
请参阅图41，图41为本申请另一实施方式中的天线模组的剖面结构示意图。本实施方式提供的天线模组200与第一实施方式中的天线模组200描述中提供的天线模组200基本相同。不同之处在于，在本实施方式中，所述天线模组200还包括第二天线辐射体260。即，在本实施方式中，所述天线模组200包括射频芯片230、绝缘基板240、一个或多个第一天线辐射体250、及第二天线辐射体260。所述射频芯片230用于产生激励信号。所述绝缘基板240包括相背设置的第三表面240a和第四表面240b，所述一个或多个第一天线辐射体250设置于所述第三表面240a，所述射频芯片230设置于所述第四表面240b。所述射频芯片230产生的所述激励信号经由内嵌于所述绝缘基板240中的传输线与所述一个或多个第一天线辐射体250电连接。所述射频芯片230可焊接在所述绝缘基板240上，以将所述激励信号经由内嵌于绝缘基板240中的传输线传输至第一天线辐射体250。所述第一天线辐射体250接收所述激励信号，并根据所述激励信号产生毫米波信号。
进一步地，所述射频芯片230相较于所述第一天线辐射体250背离所述透波结构120，且所述射频芯片230输出所述激励信号的的输出端位于所述绝缘基板240背离所述透波结构120的一侧。
进一步地，每一个所述第一天线辐射体250包括至少一个馈电点251，每一个所述馈电点251均通过所述传输线与所述射频芯片230电连接，每一个所述馈电点251与所述馈电点251对应的第一天线辐射体250的中心之间的距离大于预设距离。
在本实施方式中，所述第二天线辐射体260内嵌在所述绝缘基板240内，所述第二天线辐射体260与所述第一天线辐射体250间隔设置，且所述第二天线辐射体260及所述第一天线辐射体250通过耦合作用而形成叠层天线。当所述第二天线辐射体260与所述第一天线辐射体250通过耦合作用而形成叠层天线时，所述第一天线辐射体250与所述射频芯片230电连接且所述第二天线辐射体260未与所述射频芯片230电连接，第二天线辐射体260耦合所述第一天线辐射体250辐射的毫米波信号，并且所述第二天线辐射体260根据耦合到的所述第一天线辐射体250辐射的毫米波信号而产生新的毫米波信号。
具体地，下面以所述天线模组200采用高密度互联工艺制备而成为例进行说明。所述绝缘基板240包括核心层241、以及多个层叠设置在所述核心层241相对两侧的布线层242。所述核心层241为绝缘层，各个布线层242之间通常设置绝缘层243。位于所述核心层241邻近所述透波结构120一侧且距离所述核心层241最远的布线层242的外表面构成所述绝缘基板240的第三表面240a。位于在所述核心层241背离所述透波结构120一侧且距离所述核心层241最远的布线层242的外表面构成所述绝缘基板240的第四表面240b。所述第一天线辐射体250设置于所述第三表面240a。所述第二天线辐射体260内嵌在所述绝缘基板240内，即，所述第二天线辐射体260可设置在其他的用于布局天线辐射体的布线层242上，且所述第二天线辐射体260未设置在所述绝缘基板240的表面。
在本实施方式中，以所述绝缘基板240为8层结构为例进行示意，可以理解地，在其他实施方式中，所述绝缘基板240也可以为其他层数。所述绝缘基板240包括核心层241以及第一布线层TM1、第二布线层TM2、第三布线层TM3、第四布线层TM4、第五布线层TM5、第六布线层TM6、第七布线层TM7、及第八布线层TM8。所述第一布线层TM1、所述第二布线层TM2、所述第三布线层TM3、及所述第四布线层TM4依次层叠设置在所述核心层241的同一表面，且所述第一布线层TM1相对于所述第四布线层TM4背离所述核心层241设置，所述第一布线层TM1背离所述核心层241的表面为所述绝缘基板240的第三表面240a。所述第五布线层TM5、所述第六布线层TM6、所述第七布线层TM7、及所述第八布线层TM8依次层叠在所述核心层241的同一表面，且所述第八布线层TM8相对于所述第五布线层TM5背离所述核心层241设置，所述第八布线层TM8背离所述核心层241的表面为所述绝缘基板240的第四表面240b。通常情况下，所述第一布线层TM1、所述第二布线层TM2、所述第三布线层TM3、及第 四布线层TM4为可设置天线辐射体的布线层；所述第五布线层TM5为设置地极的地层；所述第六布线层TM6、所述第七布线层TM7、及所述第八布线层TM8为天线模组200中的馈电网络及控制线布线层。在本实施方式中，所述第一天线辐射体250设置在所述第一布线层TM1背离所述核心层241的表面，所述第二天线辐射体260设置在可设置在所述第三布线层TM3。在图35中以第一天线辐射体250设置在所述第一布线层TM1的表面、所述第二天线辐射体260设置在所述第三布线层TM3为例进行示意。可以理解地，在其他实施方式中，所述第一天线辐射体250可设置在所述第一布线层TM1背离所述核心层241的表面，所述第二天线辐射体260可设置在所述第二布线层TM2，或者所述第二天线辐射体260可设置在所述第四布线层TM4。
进一步地，所述绝缘基板240中的第一布线层TM1、第二布线层TM2、第三布线层TM3、第四布线层TM4、所述第六布线层TM6、所述第七布线层TM7、及所述第八布线层TM8均电连接至所述第五布线层TM5中的地层。具体地，所述绝缘基板240中的第一布线层TM1、第二布线层TM2、第三布线层TM3、第四布线层TM4、所述第六布线层TM6、所述第七布线层TM7、及所述第八布线层TM8均开设通孔，通孔里设置金属材料以电连接所述第五布线层TM5中的地层，以将各个布线层242中设置的器件接地。
进一步地，所述第七布线层TM7及所述第八布线层TM8还设置有电源线271、及控制线272，所述电源线271及所述控制线272分别与所述射频芯片230电连接。所述电源线271用于为所述射频芯片230提供所述射频芯片230所需要的电能，所述控制线272用于传输控制信号至所述射频芯片230，以控制所述射频芯片230工作。
进一步地，请参阅图42，图42为本申请一实施方式中为M×N射频天线阵列示意图。所述电子设备1包括M×N个天线组件10构成的射频天线阵列，其中，M为正整数，N为正整数。在图中示意出来的是4×1个天线组件10构成的天线阵列。在在所述天线组件10中的所述天线模组200中，所述绝缘基板240还包括多个金属化过孔栅格244，所述金属化过孔栅格244围绕每一个所述第一天线辐射体250设置，以提升相邻的两个所述第一天线辐射体250之间的隔离度。请继续参阅图43，图43为本申请一实施方式中的天线模组组成射频天线阵列时的封装结构示意图。当所述金属化过孔栅格244用于在多个天线模组200形成射频天线阵列时，所述金属化过孔栅格244用于提升相邻天线模组200之间的隔离度，以减少甚至避免各个天线模组200产生的毫米波信号的干扰。
前面描述的天线模组200中以天线模组200为贴片天线、叠层天线为例进行描述，可以理解地，所述天线模组200还可以包括偶极子天线、磁电偶极子天线、准八木天线等。所述天线组件10可包括贴片天线、叠层天线、偶极子天线、磁电偶极子天线、准八木天线中的至少一种或者多种的组合。进一步地，所述M×N个天线组件10中的介质基板110可相互连接为一体结构。
请参阅图44，图44为本申请第六实施方式提供的电子设备的结构示意图。所述电子设备1包括：第一天线模组210、介质基板110、及第一透波结构127。所述第一天线模组210用于在第一预设方向范围内收发第一频段的第一射频信号。所述介质基板110与所述第一天线模组210间隔设置，且至少部分所述介质基板110位于所述第一预设方向范围内，所述介质基板110位于所述第一预设方向范围内的部分对于所述第一频段的第一射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的波阻抗之间的差值为第一差值。所述第一透波结构127承载于所述介质基板110，且所述第一透波结构127的至少部分位于所述第一预设方向范围内，所述电子设备1在所述第一透波结构127对应的区域内，对所述第一频段的第一射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。在图41中以虚线a1及虚线b1之间的范围示意为第一预设方向范围。
进一步地，请参阅图45，图45为本申请第七实施方式提供的电子设备的结构示意图。所述电子设备1还包括第二天线模组220及第二透波结构128。所述第二天线模组220与所述第一天线模组210间隔设置且所述第二天线模组220位于所述第一预设方向范围之外，所述第二天线 模组220用于在第二预设方向范围内收发第二频段的第二射频信号。所述介质基板110还与所述第二天线模组220间隔设置，至少部分所述介质基板110位于所述第二预设方向范围内，所述介质基板110位于所述第二预设方向范围内的部分对于所述第二频段的第二射频信号具有第三透过率。所述第二透波结构128被承载与所述介质基板110，且所述第二透波结构128的至少部分位于所述第二预设方向范围内，所述电子设备1在所述第二透波结构128对应的区域内，对所述第一频段的第二射频信号具有第四透过率，其中，所述第四透过率大于所述第三透过率。在图42中以虚线a1及虚线b1之间的范围示意为第一预设方向范围。以虚线a2及虚线b2之间的范围示意为第二预设方向范围。
请参阅图46，图46为本申请第八实施方式提供的电子设备的结构示意图。所述介质基板110包括所述电子设备1的电池盖30时，所述电子设备1的电池盖30包括背板310及自所述背板310周缘弯折延伸的边框320，其中，所述第一天线模组210及所述第二天线模组220均对应所述背板310设置。相应地，所述所述第一透波结构127及所述第二透波结构128均对应所述背板310设置。
请参阅图47，图47为本申请第九实施方式提供的电子设备的结构示意图。第九实施方式提供的电子设备1与第八实施方式提供的电子设备1基本相同，不同之处在于，在第九实施方式中，所述第一天线模组210及所述第二天线模组220均对应所述边框320设置。相应地，所述第一透波结构127及所述第二透波结构128均对应所述边框320设置。在图中以所述第一透波结构127及所述第二透波结构128相对设置为例进行示意。
请参阅图48，图48为本申请第十实施方式提供的电子设备的结构示意图。第十实施方式提供的电子设备1与第八实施方式提供的电子设备1基本相同，不同之处在于，在第十实施方式中，所述第一天线模组210对应所述背板310设置且所述第二天线模组220对应所述边框320设置。相应地，所述第一透波结构127对应所述背板310设置，所述第二透波结构128对应所述边框320设置。
请参阅图49，图49为本申请第十一实施方式提供的电子设备的结构示意图。当所述介质基板110包括所述电子设备1的屏幕40时，所述屏幕40包括屏幕主体410和及自所述屏幕主体410周缘弯曲延伸的延伸部420，其中，所述第一天线模组210及所述第二天线模组220均对应所述屏幕主体410设置。相应地，所述第一透波结构127及所述第二透波结构128均对应所述屏幕主体410设置。
请参阅图50，图50为本申请第十二实施方式提供的电子设备的结构示意图。所述第一天线模组210及所述第二天线模组220均对应所述延伸部420设置。相应地，所述第一透波结构127及所述第二透波结构128均对应所述延伸部420设置。
请参阅图51，图51为本申请第十三实施方式提供的电子设备的结构示意图。所述第一天线模组210对应所述屏幕主体410设置，所述第二天线模组220对应所述延伸部420设置。相应地，所述第一透波结构127对应所述屏幕主体410设置，所述第二透波结构128对应所述延伸部420设置。
请参阅图52，图52为本申请第十四实施方式提供的电子设备中屏幕的结构示意图。在本实施方式中，所述介质基板110包括电子设备1的屏幕40。所述屏幕40包括层叠设置的显示面板430及盖板440。所述透波结构120设置于所述盖板440上。
所谓屏幕40是指电子设备1中执行显示功能的部件。显示面板430可以为液晶显示屏也可以为有机二极管发光显示屏。所述盖板440设置在所述显示面板430上，用于对所述显示面板430进行保护。在本实施方式中，所述透波结构120设置于所述盖板440上。所述透波结构120可设置在所述盖板440靠近所述显示面板430的表面；或者，所述透波结构120也可设置在所述盖板440背离所述显示面板430的表面；或者，所述透波结构120内嵌在所述盖板440中。由于所述盖板440为独立的部件，当所述透波结构120设置于所述盖板440上且所述透波结构120设置在所述盖板440靠近所述显示屏100的表面或者设置在所述盖板440背离所述显示面板 430的表面时，可降低所述透波结构120与显示屏本体110结合的难度。在实施方式的示意图中以所述透波结构120覆盖于盖板440的全部区域且以所述透波结构120直接设置在所述盖板440靠近所述显示面板430的表面为例进行示意。
进一步地，所述显示面板430包括彩膜基板431、阵列基板432、及液晶层433。所述彩膜基板431与所述阵列基板432相对且间隔设置。所述液晶层433夹设在所述彩膜基板431及所述阵列基板432之间。
进一步地，所述彩膜基板431上设置有矩阵排布的色阻单元431a，相邻的色阻单元431a之间设置有黑矩阵431b，所述透波结构120的至少部分对应所述黑矩阵431b设置。
本实施方式中的透波结构120的至少部分对应所述黑矩阵431b设置，以减小所述透波结构120的设置对所述显示面板430的透光率的影响。
尽管上面已经示出和描述了本申请的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本申请的限制，本领域的普通技术人员在本申请的范围内可以对上述实施例进行变化、修改、替换和变型，这些改进和润饰也视为本申请的保护范围。

Claims (20)

  1. 一种壳体组件，其特征在于，包括：
    介质基板，所述介质基板对预设频段的射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值；
    透波结构，所述透波结构承载于所述介质基板，并至少部分覆盖所述介质基板的部分区域；
    所述壳体组件在所述透波结构对应的区域内，对所述预设频段的射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。
  2. 如权利要求1所述的壳体组件，其特征在于，所述壳体组件还包粘结层，所述粘结层设置在所述透波结构与所述介质基板之间，以将所述透波结构粘结于所述介质基板。
  3. 如权利要求2所述的壳体组件，其特征在于，所述壳体组件还包括承载膜，所述承载膜用于承载所述透波结构，且所述承载膜设置在所述透波结构背离所述粘结层的一侧。
  4. 如权利要求3所述的壳体组件，其特征在于，所述承载膜的厚度越大，所述预设频段越往低频偏移。
  5. 如权利要求1所述的壳体组件，其特征在于，所述介质基板包括相对设置的第一表面及第二表面，所述透波结构设置于所述第一表面；或者，所述透波结构设置于第二表面，或者，所述透波结构内嵌于所述介质基板。
  6. 如权利要求1所述的壳体组件，其特征在于，所述透波结构包括多条沿第一方向间隔排布的导电线路及多条沿第二方向间隔排布的导电线路，且所述沿第一方向间隔排布的导电线路与所述沿第二方向间隔排布的导电线路相互交叉设置，并共同形成多个阵列排布的网格结构。
  7. 如权利要求1所述的壳体组件，其特征在于，所述透波结构包括多个阵列设置的网格结构，每一个所述网格结构由至少一条导电线路围成，相邻的两个所述网格结构至少复用部分所述导电线路。
  8. 如权利要求7所述的壳体组件，其特征在于，所述网格结构的形状为圆形、矩形、三角形、多边形、椭圆形中的任意一种。
  9. 如权利要求6至8任一项所述的壳体组件，其特征在于，所述预设频段随着所述导电线路的宽度减小而往低频偏移，且带宽增大；所述预设频段随着所述网格结构的边长或内径增大而往低频偏移，且带宽增大；所述预设频段随着所述介质基板的厚度增大而段往低频偏移，且带宽减小。
  10. 一种天线组件，其特征在于，所述天线组件包括：天线模组及如权利要求1-9任意一项所述的壳体组件，所述天线模组用于在预设方向范围内收发预设频段的射频信号，所述壳体组件中的透波结构至少部分位于所述预设方向内。
  11. 一种电子设备，其特征在于，所述电子设备包括如权利要求10所述的天线组件，其中，所述介质基板包括所述电子设备的电池盖或者屏幕。
  12. 如权利要求11所述的电子设备，其特征在于，当所述介质基板包括所述电子设备的电池盖时，所述电子设备的电池盖包括背板及自所述背板周缘弯折延伸的边框，所述透波结构对应所述背板设置，或者所述透波结构对应所述边框设置。
  13. 如权利要求11所述的电子设备，其特征在于，当所述介质基板包括所述电子设备的屏幕时，所述屏幕包括屏幕主体及自所述屏幕主体周缘弯曲延伸的延伸部，所述透波结构对应所述屏幕主体设置，或者，所述透波结构对应所述延伸部设置。
  14. 如权利要求11所述的电子设备，其特征在于，当所述介质基板包括电子设备的屏幕时，所述屏幕包括层叠设置的显示面板及盖板，所述透波结构设置于所述盖板上。
  15. 如权利要求14所述的电子设备，所述透波结构设置在所述盖板面对所述显示面板的表面上。
  16. 如权利要求15所述的电子设备，其特征在于，所述显示面板包括彩膜基板，所述彩膜基板上设置有矩阵排布的色阻单元，相邻的色阻单元之间设置有黑矩阵，所述透波结构的至少部分对应所述黑矩阵设置。
  17. 一种电子设备，其特征在于，所述电子设备包括：
    第一天线模组，所述第一天线模组用于在第一预设方向范围内收发第一频段的第一射频信号；
    介质基板，所述介质基板与所述第一天线模组间隔设置，且至少部分所述介质基板位于所述第一预设方向范围内，所述介质基板位于所述第一预设方向范围内的部分对于所述第一频段的第一射频信号具有第一等效波阻抗，所述第一等效波阻抗与自由空间的等效波阻抗之间的差值为第一差值；
    第一透波结构，所述第一透波结构承载于所述介质基板，且所述第一透波结构的至少部分位于所述第一预设方向范围内；
    所述电子设备在所述第一透波结构对应的区域内，对所述第一频段的第一射频信号具有第二等效波阻抗，所述第二等效波阻抗与自由空间的波阻抗之间的差值为第二差值，其中，所述第二差值小于所述第一差值。
  18. 如权利要求17所述的电子设备，其特征在于，所述电子设备还包括：
    第二天线模组，所述第二天线模组与所述第一天线模组间隔设置且所述第二天线模组位于所述第一预设方向范围之外，所述第二天线模组用于在第二预设方向范围内收发第二频段的第二射频信号；
    所述介质基板还与所述第二天线模组间隔设置，至少部分所述介质基板位于所述第二预设方向范围内，所述介质基板位于所述第二预设方向范围内的部分对于所述第二频段的第二射频信号具有第三等效波阻抗，所述第三等效波阻抗与自由空间的波阻抗之间的差值为第三差值；
    第二透波结构，所述第二透波结构被承载与所述介质基板，且所述第二透波结构的至少部分位于所述第二预设方向范围内；
    所述电子设备在所述第二透波结构对应的区域内，对所述第二频段的第二射频信号具有第四等效波阻抗所述第四等效波阻抗与自由空间的波阻抗之间的差值为第四差值，其中，所述第四差值小于所述第三差值。
  19. 如权利要求18所述的电子设备，其特征在于，所述介质基板包括所述电子设备的电池盖，所述电子设备的电池盖包括背板及自所述背板周缘弯折延伸的边框，其中，所述第一天线模组及所述第二天线模组均对应所述背板设置；或者，所述第一天线模组及所述第二天线模组均对应所述边框设置；或者，所述第一天线模组对应所述背板设置且所述第二天线模组对应所述边框设置。
  20. 如权利要求18所述的电子设备，其特征在于，所述介质基板包括所述电子设备的屏幕，所述屏幕包括屏幕主体和自所述屏幕主体周缘弯曲延伸的延伸部，其中，所述第一天线模组及所述第二天线模组均对应所述屏幕主体设置；或者，所述第一天线模组及所述第二天线模组均对应所述延伸部设置；或者，所述第一天线模组对应所述屏幕主体设置，所述第二天线模组对应所述延伸部设置。
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