WO2021000384A1 - Micro-led chip transfer method and display device - Google Patents

Micro-led chip transfer method and display device Download PDF

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Publication number
WO2021000384A1
WO2021000384A1 PCT/CN2019/100968 CN2019100968W WO2021000384A1 WO 2021000384 A1 WO2021000384 A1 WO 2021000384A1 CN 2019100968 W CN2019100968 W CN 2019100968W WO 2021000384 A1 WO2021000384 A1 WO 2021000384A1
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micro
led chips
substrate
led
chip
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PCT/CN2019/100968
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French (fr)
Chinese (zh)
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刘召军
莫炜静
邱成峰
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深圳市思坦科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Definitions

  • the embodiments of the present application relate to display technology, such as a Micro-LED chip transfer method and display device.
  • Micro-Light-Emitting Diode has self-luminous display characteristics. It is an all-solid-state light-emitting diode with long life, high brightness, low power consumption, small size, and ultra-high resolution. It can be applied to Extreme environments such as high temperature or radiation. Compared with the OLED technology, which is also a self-luminous display, Micro-LED not only has higher efficiency and longer life, the material is not easily affected by the environment and is relatively stable, and it can also avoid the phenomenon of image retention.
  • Micro-LED display technology is a display technology that miniaturizes and arrays traditional LED structures, and uses CMOS integrated circuit technology to make drive circuits to achieve addressing control and individual drive of each pixel. Because Micro-LED's brightness, contrast, life span, response time, viewing angle, resolution and other indicators are stronger than LCD and OLED display technologies, many manufacturers regard it as the next-generation display technology and begin to actively deploy. In the process of industrialization of Micro-LED, a core technical problem is faced, that is, the problem of massive transfer of Micro-LED. Micro-LED chips usually undergo a massive transfer after the production is completed, and a large number of Micro-LED chips are transferred to the drive circuit board.
  • Micro-LED chips are very small (usually tens of microns), the massive transfer technology requires Very high efficiency, yield and transfer accuracy.
  • the transfer technology of Micro-LED has become one of the biggest challenges in the development of Micro-LED, which hinders the promotion and application of Micro-LED display technology.
  • the embodiments of the present application provide a method for transferring a Micro-LED chip and a display device, so as to realize the transfer of the Micro-LED chip to a driving substrate, which is beneficial to the preparation of a high-resolution display device.
  • an embodiment of the present application provides a Micro-LED chip transfer method, including: providing a driving substrate, the driving substrate including a plurality of driving circuit units arranged in an array; providing an epitaxial wafer, the epitaxial wafer It includes a plurality of Micro-LED chips arranged in an array; each of the driving circuit units is configured to drive one of the plurality of Micro-LED chips to emit light corresponding to the Micro-LED chip; the epitaxy is cut according to the array rows and the array columns Chip to form a plurality of Micro-LED chips; the plurality of Micro-LED chips are aligned and transferred to the driving substrate, and each of the Micro-LED chips is driven correspondingly to one of the plurality of driving circuit units The circuit unit is electrically connected.
  • the embodiments of the present application also provide a Micro-LED display device, which is manufactured by using the above-mentioned Micro-LED chip transfer method.
  • FIG. 1 is a schematic flowchart of a Micro-LED chip transfer method provided by an embodiment of the present application
  • FIG. 2 is a schematic top view of a driving substrate provided by an embodiment of the present application.
  • FIG. 3 is a schematic top view of an epitaxial wafer provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a chip carrier substrate provided by an embodiment of the present application.
  • Fig. 5 is a schematic structural diagram of a flip-chip Micro-LED chip provided by an embodiment of the present application.
  • FIG. 6 is a schematic diagram of a color Micro-LED display panel provided by an embodiment of the present application.
  • FIG. 1 is a schematic flowchart of a method for transferring a Micro-LED chip according to an embodiment of the application. The method includes steps S110 to S140.
  • step S110 a driving substrate is provided, and the driving substrate includes a plurality of driving circuit units arranged in an array.
  • FIG. 2 is a schematic top view of a driving substrate provided by an embodiment of the application.
  • the driving substrate 10 includes a plurality of driving circuit units 100 arranged in an array.
  • the driving circuit unit 100 may include CMOS, capacitors, resistors, etc., each driving circuit unit 100 correspondingly drives a Micro-LED chip to emit light, and the driving circuit
  • the unit 100 may be designed according to actual conditions, and the embodiment of the present application does not limit it.
  • an epitaxial wafer is provided.
  • the epitaxial wafer includes a plurality of Micro-LED chips arranged in an array, and each driving circuit unit is configured to drive one of the plurality of Micro-LED chips to emit light corresponding to the Micro-LED chip.
  • FIG. 3 is a schematic top view of an epitaxial wafer provided by an embodiment of the application.
  • the epitaxial wafer 20 includes a plurality of Micro-LED chips 200 arranged in an array.
  • the Micro-LED chip 200 includes a stacked substrate, an n-type layer, an active layer, and a p-type layer.
  • the p-type layer and the p-type layer are respectively provided with n-type electrodes and p-type electrodes (not shown in the figure).
  • the Micro-LED chip is transferred to the drive substrate, the p-type electrode and n-type electrode of each Micro-LED chip and The corresponding driving circuit is electrically connected and can be used to realize the display function.
  • step S130 the epitaxial wafer is cut according to the array rows and the array columns to form a plurality of Micro-LED chips.
  • the epitaxial wafer is cut according to the row and column directions to form multiple Micro-LED chips.
  • step S140 the multiple Micro-LED chips are aligned and transferred to the drive substrate, and each Micro-LED chip is electrically connected to a corresponding drive circuit unit of the multiple drive circuit units.
  • the Micro-LED chips arranged in an array on the epitaxial wafer are cut in rows and columns to form multiple Micro-LED chips, and then the multiple Micro-LED chips are aligned and transferred to the drive substrate.
  • Each Micro-LED chip is electrically connected to a corresponding driving circuit unit of the plurality of driving circuit units, which realizes the selective transfer of the Micro-LED chip, which is beneficial to the preparation of a high-resolution display device.
  • aligning and transferring a plurality of Micro-LED chips to a driving substrate, and electrically connecting each Micro-LED chip with a corresponding driving circuit unit of the plurality of driving circuit units includes: providing a chip carrier substrate, The chip carrying substrate includes a plurality of chip carrying positions corresponding to the plurality of driving circuit units on the driving substrate; placing at least one Micro-LED chip on the chip carrying position;
  • FIG. 4 is a schematic structural diagram of a chip carrier substrate provided by an embodiment of the application. 4, the chip carrier substrate 30 includes a plurality of chip carrier positions 301, and the plurality of chip carrier positions 301 form a "T" pattern. After placing a plurality of Micro-LED chips in a "T" pattern, they can be transferred at one time. Multiple Micro-LED chips with a "T" pattern realize the optional transfer of Micro-LED chips and improve the flexibility of transfer.
  • a laser is used to cut the epitaxial wafer along the rows and columns of the array to form a plurality of Micro-LED chips.
  • the use of laser cutting can ensure good cutting quality and cutting efficiency.
  • a suitable laser can be used to cut epitaxial wafers to form Micro-LED chips. Examples of this application Not limited.
  • the Micro-LED chip is aligned and transferred to the driving substrate by flip-chip.
  • Flip Chip is based on the traditional process.
  • the light-emitting area and electrode area of the chip are not designed on the same plane. At this time, the electrode area faces the drive substrate for mounting, which can save the need for bonding wires.
  • One process is conducive to reducing the size of the chip.
  • FIG. 5 is a schematic structural diagram of a flip-chip Micro-LED chip provided by an embodiment of the application.
  • the flip-chip Micro-LED chip includes a stacked substrate 1, an n-type layer 2, an active layer 3, and a p-type Layer 4, n-type layer 2 and p-type layer 4 are respectively provided with n-type electrode 5 and p-type electrode 6, wherein substrate 1 may be a sapphire substrate, n-type layer 2 and p-type layer 4 may be n-type GaN and For p-type GaN, the active layer 3 may be a multiple quantum well formed of stacked GaN and InGaN, and the n-type electrode 5 and the p-type electrode 6 may be formed of commonly used metal materials, such as Ti, Al, Ni, Au, etc.
  • each Micro-LED chip before aligning and transferring the multiple Micro-LED chips to the drive substrate, it further includes: providing conductive glue on the side where each Micro-LED chip is electrically connected to the drive circuit unit, or on the drive substrate Conductive glue is arranged on each drive circuit unit; each Micro-LED chip is electrically connected to the corresponding drive circuit unit through the conductive glue.
  • each Micro-LED chip and the drive substrate are respectively provided with alignment marks; when each Micro-LED chip is aligned and transferred to the drive substrate, the alignment marks of each Micro-LED chip and the drive substrate Match each other.
  • each Micro-LED chip and the corresponding position of the drive substrate can be provided with matching alignment marks, such as cross, star marks and other shapes that match each other after alignment.
  • matching it indicates that each Micro-LED chip and the driving substrate have been accurately aligned, and the alignment mark can be completed by means of image recognition and other means to improve the transfer efficiency of the Micro-LED chip.
  • aligning and transferring the plurality of Micro-LED chips to the driving substrate includes: sequentially aligning and transferring the Micro-LED chips of different light-emitting colors to the driving substrate.
  • each Micro-LED chip emits light of one color
  • the light-emitting colors of the plurality of Micro-LED chips include red, green, and blue.
  • a red micro-LED chip array, a green micro-LED chip array, and a blue micro-LED chip array can be formed on different epitaxial wafers, and then cut to form three kinds of Micro-LED chips. -The LED chip is transferred to the drive substrate to achieve color display.
  • the method further includes: forming the first color quantum dots on the side of the (3N-2)th column of the Micro-LED chips away from the driving substrate Light-emitting layer; the second color quantum dot light-emitting layer is formed on the side of the (3N-1)th column of Micro-LED chips away from the drive substrate; wherein, the drive substrate includes 3N columns of Micro-LED chips, and the Micro-LED in each column The light-emitting colors of the chips are the same; N is a natural number greater than or equal to 1.
  • the first color quantum dot light-emitting layer is formed on the side of the Micro-LED chip in the (3M-2) row away from the drive substrate; and formed on the side of the Micro-LED chip in the (3M-1) row away from the drive substrate
  • the second color quantum dot light-emitting layer wherein the driving substrate includes 3M rows of Micro-LED chips, and the Micro-LED chips in each row have the same light-emitting color; M is a natural number greater than or equal to 1.
  • the light-emitting color of the plurality of Micro-LED chips is blue; the first color is red and the second color is green; or the first color is green and the second color is red.
  • quantum dots are nano-scale semiconductors. By applying a certain electric field or light pressure to this nano-semiconductor material, they will emit light of a specific frequency, and the frequency of the emitted light will change As the size of this semiconductor changes, the color of the light emitted can be controlled by adjusting the size of this nano-semiconductor. Because this nano-semiconductor has the characteristic of limiting electrons and electron holes (Electron Hole), This feature is similar to atoms or molecules in nature, so they are called quantum dots. For example, red and green quantum dot materials can be excited by blue light to produce red and green light sources, and color display can be realized with blue light sources.
  • the blue Micro-LED chip can be transferred to the drive substrate first, and then the first color quantum dot light-emitting layer can be formed in the 1, 4, 7, ... (3N-2) columns respectively, and in the 2, 5, 8,...(3N-1) columns form the second color quantum dot light-emitting layer, or the first color quantum dot light-emitting layers are formed in the 1, 4, 7,...(3M-2) rows, respectively, in the second, 5, 8, ... (3N-1) rows form the second color quantum dot light-emitting layer, where N and M are natural numbers greater than or equal to 1, the first color can be red, and the second color can be green or the first color It can be green, and the second color can be red, thereby forming a display panel that can realize color display.
  • FIG. 6 shows a schematic diagram of a color Micro-LED display panel.
  • the display panel includes 9 ⁇ 9 Micro-LED chips, among which the first, fourth, and seventh rows of Micro-LED chips 201 emit red light, and the second, fifth, and eighth rows of Micro-LED chips 202 emit green light.
  • the third, sixth, and ninth rows of Micro-LED chips 203 emit blue light, and three Micro-LED chips emitting light of different colors form a pixel 300.
  • An embodiment of the present application also provides a Micro-LED display device, which is manufactured using the Micro-LED chip transfer method described in any of the foregoing embodiments.

Abstract

Disclosed in embodiments of the application are a micro-LED chip transfer method and a display device. The method comprises: providing a driving substrate, the driving substrate comprising a plurality of driving circuit units arranged in an array; providing an epitaxial wafer, the epitaxial wafer comprising a plurality of Micro-LED chips arranged in an array; and cutting the epitaxial wafer according to the rows of the array and the columns of the array to form a plurality of Micro-LED chips; and aligning the plurality of Micro-LED chips and transferring same to the driving substrate, each Micro-LED chip being electrically connected to a corresponding driving circuit unit in the plurality of driving circuit units.

Description

一种Micro-LED芯片转移方法及显示装置Micro-LED chip transfer method and display device
本申请要求在2019年7月2日提交中国专利局、申请号为201910588798.9的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application filed with the Chinese Patent Office with application number 201910588798.9 on July 2, 2019. The entire content of this application is incorporated into this application by reference.
技术领域Technical field
本申请实施例涉及显示技术，例如一种Micro-LED芯片转移方法及显示装置。The embodiments of the present application relate to display technology, such as a Micro-LED chip transfer method and display device.
背景技术Background technique
微型发光二极管(Micro Light-Emitting Diode，Micro-LED)具有自发光显示特性，其为全固态发光二极管，寿命长、亮度高、功耗低、体积较小、具有超高分辨率，可应用于高温或辐射等极端环境。相较于同为自发光显示的OLED技术，Micro-LED不仅效率较高、寿命较长，材料不易受到环境影响而相对稳定，还能避免产生残影现象等。Micro-Light-Emitting Diode (Micro-LED) has self-luminous display characteristics. It is an all-solid-state light-emitting diode with long life, high brightness, low power consumption, small size, and ultra-high resolution. It can be applied to Extreme environments such as high temperature or radiation. Compared with the OLED technology, which is also a self-luminous display, Micro-LED not only has higher efficiency and longer life, the material is not easily affected by the environment and is relatively stable, and it can also avoid the phenomenon of image retention.
Micro-LED显示技术是将传统的LED结构进行微缩化和阵列化，并采用CMOS集成电路工艺制作驱动电路，来实现对每一个像素点的定址控制和单独驱动的显示技术。由于Micro-LED的亮度、对比度、寿命、响应时间、可视角度和分辨率等各种指标都强于LCD和OLED显示技术，许多厂家将其视为下一代显示技术而开始积极布局。在Micro-LED的产业化过程中面临着一个核心技术难题，即Micro-LED的巨量转移问题。Micro-LED芯片通常在制作完成之后，会进行巨量转移，将大量Micro-LED芯片转移到驱动电路板上，由于Micro-LED芯片非常细小(通常为几十微米)，因此巨量转移技术要求非常高的效率、良品率和转移精度。目前Micro-LED的转移技术已经成为了Micro-LED研发过程中的最大挑战之一，阻碍了Micro-LED显示技术的推广与应用。Micro-LED display technology is a display technology that miniaturizes and arrays traditional LED structures, and uses CMOS integrated circuit technology to make drive circuits to achieve addressing control and individual drive of each pixel. Because Micro-LED's brightness, contrast, life span, response time, viewing angle, resolution and other indicators are stronger than LCD and OLED display technologies, many manufacturers regard it as the next-generation display technology and begin to actively deploy. In the process of industrialization of Micro-LED, a core technical problem is faced, that is, the problem of massive transfer of Micro-LED. Micro-LED chips usually undergo a massive transfer after the production is completed, and a large number of Micro-LED chips are transferred to the drive circuit board. Because the Micro-LED chips are very small (usually tens of microns), the massive transfer technology requires Very high efficiency, yield and transfer accuracy. At present, the transfer technology of Micro-LED has become one of the biggest challenges in the development of Micro-LED, which hinders the promotion and application of Micro-LED display technology.
发明内容Summary of the invention
本申请实施例提供一种Micro-LED芯片转移方法及显示装置，以实现Micro-LED芯片转移到驱动基板上，有利于制备高分辨率的显示装置。The embodiments of the present application provide a method for transferring a Micro-LED chip and a display device, so as to realize the transfer of the Micro-LED chip to a driving substrate, which is beneficial to the preparation of a high-resolution display device.
第一方面，本申请实施例提供了一种Micro-LED芯片转移方法，包括：提供一驱动基板，所述驱动基板包括阵列排布的多个驱动电路单元；提供一外延片，所述外延片包括阵列排布的多个Micro-LED芯片；每个所述驱动电路单元 设置为驱动多个所述Micro-LED芯片中的一个对应Micro-LED芯片发光；按照阵列行和阵列列切割所述外延片，形成多个Micro-LED芯片；将多个所述Micro-LED芯片对准转移至所述驱动基板上，每个所述Micro-LED芯片与多个所述驱动电路单元中的一个对应驱动电路单元电连接。In a first aspect, an embodiment of the present application provides a Micro-LED chip transfer method, including: providing a driving substrate, the driving substrate including a plurality of driving circuit units arranged in an array; providing an epitaxial wafer, the epitaxial wafer It includes a plurality of Micro-LED chips arranged in an array; each of the driving circuit units is configured to drive one of the plurality of Micro-LED chips to emit light corresponding to the Micro-LED chip; the epitaxy is cut according to the array rows and the array columns Chip to form a plurality of Micro-LED chips; the plurality of Micro-LED chips are aligned and transferred to the driving substrate, and each of the Micro-LED chips is driven correspondingly to one of the plurality of driving circuit units The circuit unit is electrically connected.
第二方面，本申请实施例还提供了一种Micro-LED显示装置，利用上述Micro-LED芯片转移方法制成。In the second aspect, the embodiments of the present application also provide a Micro-LED display device, which is manufactured by using the above-mentioned Micro-LED chip transfer method.
附图说明Description of the drawings
图1是本申请一实施例提供的一种Micro-LED芯片转移方法的流程示意图；FIG. 1 is a schematic flowchart of a Micro-LED chip transfer method provided by an embodiment of the present application;
图2是本申请一实施例提供的一种驱动基板的俯视示意图；2 is a schematic top view of a driving substrate provided by an embodiment of the present application;
图3是本申请一实施例提供的一种外延片的俯视示意图；3 is a schematic top view of an epitaxial wafer provided by an embodiment of the present application;
图4是本申请一实施例提供的一种芯片承载基板的结构示意图；4 is a schematic structural diagram of a chip carrier substrate provided by an embodiment of the present application;
图5是本申请一实施例提供的一种倒装Micro-LED芯片的结构示意图；Fig. 5 is a schematic structural diagram of a flip-chip Micro-LED chip provided by an embodiment of the present application;
图6是本申请一实施例提供的一种彩色Micro-LED显示面板的示意图。FIG. 6 is a schematic diagram of a color Micro-LED display panel provided by an embodiment of the present application.
具体实施方式Detailed ways
图1为本申请一实施例提供的一种Micro-LED芯片转移方法的流程示意图，该方法包括步骤S110至步骤S140。FIG. 1 is a schematic flowchart of a method for transferring a Micro-LED chip according to an embodiment of the application. The method includes steps S110 to S140.
在步骤S110中，提供一驱动基板，驱动基板包括阵列排布的多个驱动电路单元。In step S110, a driving substrate is provided, and the driving substrate includes a plurality of driving circuit units arranged in an array.
图2所示为本申请一实施例提供的一种驱动基板的俯视示意图。参考图2，该驱动基板10包括阵列排布的多个驱动电路单元100，驱动电路单元100可以包括COMS、电容、电阻等，每个驱动电路单元100对应驱动一个Micro-LED芯片发光，驱动电路单元100可以根据实际情况设计，本申请实施例不作限定。FIG. 2 is a schematic top view of a driving substrate provided by an embodiment of the application. 2, the driving substrate 10 includes a plurality of driving circuit units 100 arranged in an array. The driving circuit unit 100 may include CMOS, capacitors, resistors, etc., each driving circuit unit 100 correspondingly drives a Micro-LED chip to emit light, and the driving circuit The unit 100 may be designed according to actual conditions, and the embodiment of the present application does not limit it.
在步骤S120中，提供一外延片，外延片包括阵列排布的多个Micro-LED芯片，每个驱动电路单元设置为驱动多个Micro-LED芯片中的一个对应Micro-LED芯片发光。In step S120, an epitaxial wafer is provided. The epitaxial wafer includes a plurality of Micro-LED chips arranged in an array, and each driving circuit unit is configured to drive one of the plurality of Micro-LED chips to emit light corresponding to the Micro-LED chip.
图3所示为本申请一实施例提供的一种外延片的俯视示意图。参考图3，外延片20包括阵列排布的多个Micro-LED芯片200，可以理解的是，Micro-LED芯片200包括层叠设置衬底、n型层、有源层以及p型层，n型层和p型层分别设置有n型电极和p型电极(图中未示出)，将Micro-LED芯片转移到驱动基板 上时，每个Micro-LED芯片的p型电极和n型电极与对应的驱动电路电连接，可以用于实现显示功能。FIG. 3 is a schematic top view of an epitaxial wafer provided by an embodiment of the application. 3, the epitaxial wafer 20 includes a plurality of Micro-LED chips 200 arranged in an array. It can be understood that the Micro-LED chip 200 includes a stacked substrate, an n-type layer, an active layer, and a p-type layer. The p-type layer and the p-type layer are respectively provided with n-type electrodes and p-type electrodes (not shown in the figure). When the Micro-LED chip is transferred to the drive substrate, the p-type electrode and n-type electrode of each Micro-LED chip and The corresponding driving circuit is electrically connected and can be used to realize the display function.
在步骤S130中，按照阵列行和阵列列切割外延片，形成多个Micro-LED芯片。In step S130, the epitaxial wafer is cut according to the array rows and the array columns to form a plurality of Micro-LED chips.
参考图3，按照行和列的方向对外延片进行切割，可以形成多个Micro-LED芯片。Referring to Fig. 3, the epitaxial wafer is cut according to the row and column directions to form multiple Micro-LED chips.
在步骤S140中，将多个Micro-LED芯片对准转移至驱动基板上，每个Micro-LED芯片与多个驱动电路单元中的一个对应驱动电路单元电连接。In step S140, the multiple Micro-LED chips are aligned and transferred to the drive substrate, and each Micro-LED chip is electrically connected to a corresponding drive circuit unit of the multiple drive circuit units.
本实施例的技术方案，通过将外延片上阵列排布的Micro-LED芯片按照行和列切割，形成多个Micro-LED芯片，然后将多个Micro-LED芯片对准转移至驱动基板上，每个Micro-LED芯片与多个驱动电路单元中的一个对应驱动电路单元电连接，实现了Micro-LED芯片的选择性转移，有利于制备高分辨率的显示装置。In the technical solution of this embodiment, the Micro-LED chips arranged in an array on the epitaxial wafer are cut in rows and columns to form multiple Micro-LED chips, and then the multiple Micro-LED chips are aligned and transferred to the drive substrate. Each Micro-LED chip is electrically connected to a corresponding driving circuit unit of the plurality of driving circuit units, which realizes the selective transfer of the Micro-LED chip, which is beneficial to the preparation of a high-resolution display device.
在一实施例中，将多个Micro-LED芯片对准转移至驱动基板上，每个Micro-LED芯片与多个驱动电路单元中的一个对应驱动电路单元电连接包括：提供一芯片承载基板，芯片承载基板包括多个与驱动基板上的多个驱动电路单元一一对应的芯片承载位；将至少一个Micro-LED芯片放置到芯片承载位；In an embodiment, aligning and transferring a plurality of Micro-LED chips to a driving substrate, and electrically connecting each Micro-LED chip with a corresponding driving circuit unit of the plurality of driving circuit units includes: providing a chip carrier substrate, The chip carrying substrate includes a plurality of chip carrying positions corresponding to the plurality of driving circuit units on the driving substrate; placing at least one Micro-LED chip on the chip carrying position;
将芯片承载基板与驱动基板对准放置，将Micro-LED芯片对准转移至驱动基板上。Align the chip carrier substrate with the drive substrate, and transfer the Micro-LED chip to the drive substrate.
可以理解的是，在切割外延片时形成多个Micro-LED芯片后，可以先将多个Micro-LED芯片放置到一个芯片承载基板上，承载基板上包括与驱动基板上的多个驱动电路单元位置相对应的芯片承载位，这样可以实现多个Micro-LED芯片一次转移，提高转移效率；另外，芯片承载位还可以根据需求形成预设图案。示例性的，图4所示为本申请一实施例提供的一种芯片承载基板的结构示意图。参考图4，该芯片承载基板30包括多个芯片承载位301，多个芯片承载位301形成一个“T”形图案，将多个Micro-LED芯片按“T”图案放置后，可以一次转移包括“T”图案的多个Micro-LED芯片，实现Micro-LED芯片可选择转移，提高转移的灵活性。It is understandable that after forming multiple Micro-LED chips when cutting the epitaxial wafer, the multiple Micro-LED chips can be placed on a chip carrier substrate first, and the carrier substrate includes multiple drive circuit units on the drive substrate. Position the corresponding chip carrying position, so that multiple Micro-LED chips can be transferred at one time, improving the transfer efficiency; in addition, the chip carrying position can also be formed into a preset pattern according to requirements. Exemplarily, FIG. 4 is a schematic structural diagram of a chip carrier substrate provided by an embodiment of the application. 4, the chip carrier substrate 30 includes a plurality of chip carrier positions 301, and the plurality of chip carrier positions 301 form a "T" pattern. After placing a plurality of Micro-LED chips in a "T" pattern, they can be transferred at one time. Multiple Micro-LED chips with a "T" pattern realize the optional transfer of Micro-LED chips and improve the flexibility of transfer.
在一实施例中，利用激光沿阵列行和阵列列切割外延片，形成多个Micro-LED芯片。In one embodiment, a laser is used to cut the epitaxial wafer along the rows and columns of the array to form a plurality of Micro-LED chips.
可以理解的是，由于激光具有光束质量好、能量密度高等优点，利用激光 切割可以保证良好的切割质量和切割效率，实施时可以选用合适的激光器切割外延片形成Micro-LED芯片，本申请实施例不作限定。It is understandable that because the laser has the advantages of good beam quality and high energy density, the use of laser cutting can ensure good cutting quality and cutting efficiency. During implementation, a suitable laser can be used to cut epitaxial wafers to form Micro-LED chips. Examples of this application Not limited.
在一实施例中，采用倒装方式将Micro-LED芯片对准转移至驱动基板上。In one embodiment, the Micro-LED chip is aligned and transferred to the driving substrate by flip-chip.
倒装芯片(Flip Chip)是在传统工艺的基础上，将芯片的发光区与电极区不设计在同一个平面，这时则由电极区面朝向驱动基板进行贴装，可以省掉焊线这一工序，有利于减小芯片体积。Flip Chip is based on the traditional process. The light-emitting area and electrode area of the chip are not designed on the same plane. At this time, the electrode area faces the drive substrate for mounting, which can save the need for bonding wires. One process is conducive to reducing the size of the chip.
图5所示为本申请一实施例提供的一种倒装Micro-LED芯片的结构示意图，该倒装Micro-LED芯片包括层叠设置衬底1、n型层2、有源层3以及p型层4，n型层2和p型层4分别设置有n型电极5和p型电极6，其中衬底1可以为蓝宝石衬底，n型层2和p型层4可以为n型GaN和p型GaN，有源层3可以为层叠设置的GaN与InGaN形成的多量子阱，n型电极5和p型电极6可以为常用的金属材料形成，例如Ti、Al、Ni、Au等。Figure 5 is a schematic structural diagram of a flip-chip Micro-LED chip provided by an embodiment of the application. The flip-chip Micro-LED chip includes a stacked substrate 1, an n-type layer 2, an active layer 3, and a p-type Layer 4, n-type layer 2 and p-type layer 4 are respectively provided with n-type electrode 5 and p-type electrode 6, wherein substrate 1 may be a sapphire substrate, n-type layer 2 and p-type layer 4 may be n-type GaN and For p-type GaN, the active layer 3 may be a multiple quantum well formed of stacked GaN and InGaN, and the n-type electrode 5 and the p-type electrode 6 may be formed of commonly used metal materials, such as Ti, Al, Ni, Au, etc.
在一实施例中，将多个Micro-LED芯片对准转移至驱动基板上之前，还包括：在每个Micro-LED芯片与驱动电路单元电连接的一侧设置导电胶，或者在驱动基板的每个驱动电路单元上设置导电胶；每个Micro-LED芯片通过导电胶与对应驱动电路单元电连接。In one embodiment, before aligning and transferring the multiple Micro-LED chips to the drive substrate, it further includes: providing conductive glue on the side where each Micro-LED chip is electrically connected to the drive circuit unit, or on the drive substrate Conductive glue is arranged on each drive circuit unit; each Micro-LED chip is electrically connected to the corresponding drive circuit unit through the conductive glue.
在一实施例中，每个Micro-LED芯片和驱动基板分别设置对位标记；将每个Micro-LED芯片对准转移至驱动基板上时，每个Micro-LED芯片和驱动基板的对位标记相互匹配。In an embodiment, each Micro-LED chip and the drive substrate are respectively provided with alignment marks; when each Micro-LED chip is aligned and transferred to the drive substrate, the alignment marks of each Micro-LED chip and the drive substrate Match each other.
可以理解的是，每个Micro-LED芯片两端和驱动基板对应位置处可以设置相互匹配的对位标记，例如对准后相互匹配的十字、星形标记等形状，在检测到对位标记恰好匹配的情况下，表明每个Micro-LED芯片和驱动基板已准确对位，对位标记可以利用图像识别等手段完成，提高Micro-LED芯片的转移效率。It is understandable that the two ends of each Micro-LED chip and the corresponding position of the drive substrate can be provided with matching alignment marks, such as cross, star marks and other shapes that match each other after alignment. In the case of matching, it indicates that each Micro-LED chip and the driving substrate have been accurately aligned, and the alignment mark can be completed by means of image recognition and other means to improve the transfer efficiency of the Micro-LED chip.
在一实施例中，将多个Micro-LED芯片对准转移至驱动基板上包括：依次将不同发光颜色的Micro-LED芯片对准转移至驱动基板上。In an embodiment, aligning and transferring the plurality of Micro-LED chips to the driving substrate includes: sequentially aligning and transferring the Micro-LED chips of different light-emitting colors to the driving substrate.
在一实施例中，每个Micro-LED芯片发出一种颜色的光，多个Micro-LED芯片的发光颜色包括红色、绿色和蓝色。In an embodiment, each Micro-LED chip emits light of one color, and the light-emitting colors of the plurality of Micro-LED chips include red, green, and blue.
可以理解的是，可以在不同的外延片上分别形成红光Micro-LED芯片阵列、绿光Micro-LED芯片阵列以及蓝光Micro-LED芯片阵列，然后切割形成三种Micro-LED芯片，将三种Micro-LED芯片转移到驱动基板实现彩色显示。It is understandable that a red micro-LED chip array, a green micro-LED chip array, and a blue micro-LED chip array can be formed on different epitaxial wafers, and then cut to form three kinds of Micro-LED chips. -The LED chip is transferred to the drive substrate to achieve color display.
在一实施例中，将多个Micro-LED芯片对准转移至驱动基板上之后，还包 括：在第(3N-2)列Micro-LED芯片远离驱动基板的一侧上形成第一颜色量子点发光层；在第(3N-1)列Micro-LED芯片远离驱动基板的一侧上形成第二颜色量子点发光层；其中，驱动基板包括3N列Micro-LED芯片，每列中的Micro-LED芯片的发光颜色相同；N为大于或等于1的自然数。或者，在第(3M-2)行Micro-LED芯片远离驱动基板的一侧上形成第一颜色量子点发光层；在第(3M-1)行Micro-LED芯片远离驱动基板的一侧上形成第二颜色量子点发光层；其中，驱动基板包括3M行Micro-LED芯片，每行中的Micro-LED芯片的发光颜色相同；M为大于或等于1的自然数。In an embodiment, after aligning and transferring the plurality of Micro-LED chips to the driving substrate, the method further includes: forming the first color quantum dots on the side of the (3N-2)th column of the Micro-LED chips away from the driving substrate Light-emitting layer; the second color quantum dot light-emitting layer is formed on the side of the (3N-1)th column of Micro-LED chips away from the drive substrate; wherein, the drive substrate includes 3N columns of Micro-LED chips, and the Micro-LED in each column The light-emitting colors of the chips are the same; N is a natural number greater than or equal to 1. Alternatively, the first color quantum dot light-emitting layer is formed on the side of the Micro-LED chip in the (3M-2) row away from the drive substrate; and formed on the side of the Micro-LED chip in the (3M-1) row away from the drive substrate The second color quantum dot light-emitting layer; wherein the driving substrate includes 3M rows of Micro-LED chips, and the Micro-LED chips in each row have the same light-emitting color; M is a natural number greater than or equal to 1.
在一实施例中，多个Micro-LED芯片的发光颜色为蓝色；第一颜色为红色，第二颜色为绿色；或者第一颜色为绿色，第二颜色为红色。In an embodiment, the light-emitting color of the plurality of Micro-LED chips is blue; the first color is red and the second color is green; or the first color is green and the second color is red.
可以理解的是，量子点(quantum dot)是一种纳米级别的半导体，通过对这种纳米半导体材料施加一定的电场或光压，它们便会发出特定频率的光，而发出的光的频率会随着这种半导体的尺寸的改变而变化，因而通过调节这种纳米半导体的尺寸就可以控制其发出的光的颜色，由于这种纳米半导体拥有限制电子和电子空穴(Electron hole)的特性，这一特性类似于自然界中的原子或分子，因而被称为量子点。例如可以通过蓝光激发红光和绿光的量子点材料，制作发红光和绿光的光源，配合蓝光光源即可实现彩色显示。It is understandable that quantum dots (quantum dots) are nano-scale semiconductors. By applying a certain electric field or light pressure to this nano-semiconductor material, they will emit light of a specific frequency, and the frequency of the emitted light will change As the size of this semiconductor changes, the color of the light emitted can be controlled by adjusting the size of this nano-semiconductor. Because this nano-semiconductor has the characteristic of limiting electrons and electron holes (Electron Hole), This feature is similar to atoms or molecules in nature, so they are called quantum dots. For example, red and green quantum dot materials can be excited by blue light to produce red and green light sources, and color display can be realized with blue light sources.
在实施时，可以先将蓝光Micro-LED芯片转移到驱动基板，然后分别在第1，4，7，……(3N-2)列形成第一颜色量子点发光层，在第2，5，8，……(3N-1)列形成第二颜色量子点发光层，或者分别在第1，4，7，……(3M-2)行形成第一颜色量子点发光层，在第2，5，8，……(3N-1)行形成第二颜色量子点发光层，其中，N、M为大于等于1的自然数，第一颜色可以为红色，第二颜色可以为绿色或第一颜色可以为绿色，第二颜色可以为红色，从而形成可以实现彩色显示的显示面板。In the implementation, the blue Micro-LED chip can be transferred to the drive substrate first, and then the first color quantum dot light-emitting layer can be formed in the 1, 4, 7, ... (3N-2) columns respectively, and in the 2, 5, 8,...(3N-1) columns form the second color quantum dot light-emitting layer, or the first color quantum dot light-emitting layers are formed in the 1, 4, 7,...(3M-2) rows, respectively, in the second, 5, 8, ... (3N-1) rows form the second color quantum dot light-emitting layer, where N and M are natural numbers greater than or equal to 1, the first color can be red, and the second color can be green or the first color It can be green, and the second color can be red, thereby forming a display panel that can realize color display.
示例性的，图6示出了一种彩色Micro-LED显示面板的示意图。参考图6，该显示面板包括9×9个Micro-LED芯片，其中第1，4，7列Micro-LED芯片201发出红光，第2，5，8列Micro-LED芯片202发出绿光，第3，6，9列Micro-LED芯片203发出蓝光，三个发出不同色光的Micro-LED芯片形成一个像素300。Exemplarily, FIG. 6 shows a schematic diagram of a color Micro-LED display panel. Referring to Fig. 6, the display panel includes 9×9 Micro-LED chips, among which the first, fourth, and seventh rows of Micro-LED chips 201 emit red light, and the second, fifth, and eighth rows of Micro-LED chips 202 emit green light. The third, sixth, and ninth rows of Micro-LED chips 203 emit blue light, and three Micro-LED chips emitting light of different colors form a pixel 300.
本申请实施例还提供一种Micro-LED显示装置，利用上述任意实施例所述Micro-LED芯片转移方法制成。An embodiment of the present application also provides a Micro-LED display device, which is manufactured using the Micro-LED chip transfer method described in any of the foregoing embodiments.

Claims (11)

  1. 一种Micro-LED芯片转移方法，包括：A method for transferring Micro-LED chips, including:
    提供一驱动基板，所述驱动基板包括阵列排布的多个驱动电路单元；Providing a driving substrate, the driving substrate including a plurality of driving circuit units arranged in an array;
    提供一外延片，所述外延片包括阵列排布的多个Micro-LED芯片；每个所述驱动电路单元设置为驱动多个所述Micro-LED芯片中的一个对应Micro-LED芯片发光；An epitaxial wafer is provided, the epitaxial wafer includes a plurality of Micro-LED chips arranged in an array; each of the driving circuit units is configured to drive one of the plurality of Micro-LED chips to emit light corresponding to the Micro-LED chip;
    按照阵列行和阵列列切割所述外延片，形成多个Micro-LED芯片；Cutting the epitaxial wafer according to the array row and the array column to form a plurality of Micro-LED chips;
    将多个所述Micro-LED芯片对准转移至所述驱动基板上，每个所述Micro-LED芯片与多个所述驱动电路单元中的一个对应驱动电路单元电连接。A plurality of the Micro-LED chips are aligned and transferred to the driving substrate, and each of the Micro-LED chips is electrically connected to a corresponding driving circuit unit of the plurality of driving circuit units.
  2. 根据权利要求1所述的方法，其中，所述将多个所述Micro-LED芯片对准转移至所述驱动基板上，每个所述Micro-LED芯片与多个所述驱动电路单元中的一个对应驱动电路单元电连接包括：The method according to claim 1, wherein the alignment and transfer of a plurality of the Micro-LED chips to the driving substrate, each of the Micro-LED chip and a plurality of the driving circuit unit The electrical connection of a corresponding drive circuit unit includes:
    提供一芯片承载基板，所述芯片承载基板包括多个与所述驱动基板上的多个所述驱动电路单元一一对应的芯片承载位；Providing a chip carrying substrate, the chip carrying substrate including a plurality of chip carrying positions corresponding to the plurality of driving circuit units on the driving substrate;
    将多个所述Micro-LED芯片放置到所述芯片承载位；Placing a plurality of the Micro-LED chips on the chip carrying position;
    将所述芯片承载基板与所述驱动基板对准放置，将所述Micro-LED芯片对准转移至所述驱动基板上。The chip carrier substrate and the driving substrate are aligned and placed, and the Micro-LED chip is aligned and transferred to the driving substrate.
  3. 根据权利要求1所述的方法，其中，按照阵列行和阵列列切割所述外延片，形成多个Micro-LED芯片，包括：The method according to claim 1, wherein the cutting the epitaxial wafer according to the array rows and the array columns to form a plurality of Micro-LED chips comprises:
    利用激光沿阵列行和阵列列切割所述外延片，形成多个所述Micro-LED芯片。A laser is used to cut the epitaxial wafer along the rows and columns of the array to form a plurality of the Micro-LED chips.
  4. 根据权利要求1所述的方法，其中，将多个所述Micro-LED芯片对准转移至所述驱动基板上，包括：The method of claim 1, wherein the aligning and transferring a plurality of the Micro-LED chips to the driving substrate comprises:
    采用倒装方式将所述Micro-LED芯片对准转移至所述驱动基板上。The Micro-LED chip is aligned and transferred to the driving substrate by flip-chip.
  5. 根据权利要求1所述的方法，将多个所述Micro-LED芯片对准转移至所述驱动基板上之前，还包括：The method according to claim 1, before aligning and transferring a plurality of the Micro-LED chips to the driving substrate, further comprising:
    在每个所述Micro-LED芯片与所述驱动电路单元电连接的一侧设置导电胶，或者在所述驱动基板的每个驱动电路单元上设置导电胶；Conductive glue is arranged on the side where each of the Micro-LED chips are electrically connected to the drive circuit unit, or conductive glue is arranged on each drive circuit unit of the drive substrate;
    每个所述Micro-LED芯片通过导电胶与所述对应驱动电路单元电连接。Each of the Micro-LED chips is electrically connected to the corresponding driving circuit unit through conductive glue.
  6. 根据权利要求1所述的方法，其中，每个所述Micro-LED芯片和所述驱动基板分别设置对位标记；将每个所述Micro-LED芯片对准转移至所述驱动基板上时，每个所述Micro-LED芯片和所述驱动基板的对位标记相互匹配。The method according to claim 1, wherein each of the Micro-LED chip and the drive substrate is provided with an alignment mark; when each of the Micro-LED chips is aligned and transferred to the drive substrate, The alignment marks of each of the Micro-LED chips and the drive substrate are matched with each other.
  7. 根据权利要求1所述的方法，其中，将多个所述Micro-LED芯片对准转移至所述驱动基板上包括：The method according to claim 1, wherein aligning and transferring a plurality of the Micro-LED chips to the driving substrate comprises:
    依次将不同发光颜色的所述Micro-LED芯片对准转移至所述驱动基板上。The Micro-LED chips of different light-emitting colors are sequentially transferred to the driving substrate in alignment.
  8. 根据权利要求7所述的方法，其中，每个所述Micro-LED芯片发出一种颜色的光，多个所述Micro-LED芯片的发光颜色包括红色、绿色和蓝色。8. The method according to claim 7, wherein each of the Micro-LED chips emits light of one color, and the luminous colors of the plurality of Micro-LED chips include red, green, and blue.
  9. 根据权利要求1所述的方法，将多个所述Micro-LED芯片对准转移至所述驱动基板上之后，还包括：The method according to claim 1, after aligning and transferring a plurality of the Micro-LED chips to the driving substrate, further comprising:
    在第(3N-2)列所述Micro-LED芯片远离所述驱动基板的一侧上形成第一颜色量子点发光层；在第(3N-1)列所述Micro-LED芯片远离所述驱动基板的一侧上形成第二颜色量子点发光层；其中，所述驱动基板包括3N列所述Micro-LED芯片，每列中的所述Micro-LED芯片的发光颜色相同；N为大于或等于1的自然数；The first color quantum dot light-emitting layer is formed on the side of the Micro-LED chip in column (3N-2) away from the drive substrate; in column (3N-1) the Micro-LED chip is away from the drive substrate A second color quantum dot light-emitting layer is formed on one side of the substrate; wherein the drive substrate includes 3N rows of the Micro-LED chips, and the Micro-LED chips in each row have the same light-emitting color; N is greater than or equal to Natural number of 1;
    或者，在第(3M-2)行所述Micro-LED芯片远离所述驱动基板的一侧上形成第一颜色量子点发光层；在第(3M-1)行所述Micro-LED芯片远离所述驱动基板的一侧上形成第二颜色量子点发光层；其中，所述驱动基板包括3M行所述Micro-LED芯片，每行中的所述Micro-LED芯片的发光颜色相同；M为大于或等于1的自然数。Alternatively, the first color quantum dot light-emitting layer is formed on the side of the Micro-LED chip in row (3M-2) away from the drive substrate; in row (3M-1) the Micro-LED chip is away from all A second color quantum dot light-emitting layer is formed on one side of the driving substrate; wherein the driving substrate includes 3M rows of the Micro-LED chips, and the Micro-LED chips in each row have the same light-emitting color; M is greater than Or a natural number equal to 1.
  10. 根据权利要求9所述的方法，其中，多个所述Micro-LED芯片的发光颜色为蓝色；The method according to claim 9, wherein the light emission color of the plurality of Micro-LED chips is blue;
    所述第一颜色为红色，所述第二颜色为绿色；或者所述第一颜色为绿色，所述第二颜色为红色。The first color is red and the second color is green; or the first color is green and the second color is red.
  11. 一种Micro-LED显示装置，利用权利要求1～10任一项所述的Micro-LED芯片转移方法制成。A Micro-LED display device manufactured by the Micro-LED chip transfer method according to any one of claims 1-10.
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