WO2021000384A1 - Procédé de transfert de puce à micro-led, et dispositif d'affichage - Google Patents

Procédé de transfert de puce à micro-led, et dispositif d'affichage Download PDF

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Publication number
WO2021000384A1
WO2021000384A1 PCT/CN2019/100968 CN2019100968W WO2021000384A1 WO 2021000384 A1 WO2021000384 A1 WO 2021000384A1 CN 2019100968 W CN2019100968 W CN 2019100968W WO 2021000384 A1 WO2021000384 A1 WO 2021000384A1
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WO
WIPO (PCT)
Prior art keywords
micro
led chips
substrate
led
chip
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Application number
PCT/CN2019/100968
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English (en)
Chinese (zh)
Inventor
刘召军
莫炜静
邱成峰
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深圳市思坦科技有限公司
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Publication of WO2021000384A1 publication Critical patent/WO2021000384A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Definitions

  • the embodiments of the present application relate to display technology, such as a Micro-LED chip transfer method and display device.
  • Micro-Light-Emitting Diode has self-luminous display characteristics. It is an all-solid-state light-emitting diode with long life, high brightness, low power consumption, small size, and ultra-high resolution. It can be applied to Extreme environments such as high temperature or radiation. Compared with the OLED technology, which is also a self-luminous display, Micro-LED not only has higher efficiency and longer life, the material is not easily affected by the environment and is relatively stable, and it can also avoid the phenomenon of image retention.
  • Micro-LED display technology is a display technology that miniaturizes and arrays traditional LED structures, and uses CMOS integrated circuit technology to make drive circuits to achieve addressing control and individual drive of each pixel. Because Micro-LED's brightness, contrast, life span, response time, viewing angle, resolution and other indicators are stronger than LCD and OLED display technologies, many manufacturers regard it as the next-generation display technology and begin to actively deploy. In the process of industrialization of Micro-LED, a core technical problem is faced, that is, the problem of massive transfer of Micro-LED. Micro-LED chips usually undergo a massive transfer after the production is completed, and a large number of Micro-LED chips are transferred to the drive circuit board.
  • Micro-LED chips are very small (usually tens of microns), the massive transfer technology requires Very high efficiency, yield and transfer accuracy.
  • the transfer technology of Micro-LED has become one of the biggest challenges in the development of Micro-LED, which hinders the promotion and application of Micro-LED display technology.
  • the embodiments of the present application provide a method for transferring a Micro-LED chip and a display device, so as to realize the transfer of the Micro-LED chip to a driving substrate, which is beneficial to the preparation of a high-resolution display device.
  • an embodiment of the present application provides a Micro-LED chip transfer method, including: providing a driving substrate, the driving substrate including a plurality of driving circuit units arranged in an array; providing an epitaxial wafer, the epitaxial wafer It includes a plurality of Micro-LED chips arranged in an array; each of the driving circuit units is configured to drive one of the plurality of Micro-LED chips to emit light corresponding to the Micro-LED chip; the epitaxy is cut according to the array rows and the array columns Chip to form a plurality of Micro-LED chips; the plurality of Micro-LED chips are aligned and transferred to the driving substrate, and each of the Micro-LED chips is driven correspondingly to one of the plurality of driving circuit units The circuit unit is electrically connected.
  • the embodiments of the present application also provide a Micro-LED display device, which is manufactured by using the above-mentioned Micro-LED chip transfer method.
  • FIG. 1 is a schematic flowchart of a Micro-LED chip transfer method provided by an embodiment of the present application
  • FIG. 2 is a schematic top view of a driving substrate provided by an embodiment of the present application.
  • FIG. 3 is a schematic top view of an epitaxial wafer provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a chip carrier substrate provided by an embodiment of the present application.
  • Fig. 5 is a schematic structural diagram of a flip-chip Micro-LED chip provided by an embodiment of the present application.
  • FIG. 6 is a schematic diagram of a color Micro-LED display panel provided by an embodiment of the present application.
  • FIG. 1 is a schematic flowchart of a method for transferring a Micro-LED chip according to an embodiment of the application. The method includes steps S110 to S140.
  • step S110 a driving substrate is provided, and the driving substrate includes a plurality of driving circuit units arranged in an array.
  • FIG. 2 is a schematic top view of a driving substrate provided by an embodiment of the application.
  • the driving substrate 10 includes a plurality of driving circuit units 100 arranged in an array.
  • the driving circuit unit 100 may include CMOS, capacitors, resistors, etc., each driving circuit unit 100 correspondingly drives a Micro-LED chip to emit light, and the driving circuit
  • the unit 100 may be designed according to actual conditions, and the embodiment of the present application does not limit it.
  • an epitaxial wafer is provided.
  • the epitaxial wafer includes a plurality of Micro-LED chips arranged in an array, and each driving circuit unit is configured to drive one of the plurality of Micro-LED chips to emit light corresponding to the Micro-LED chip.
  • FIG. 3 is a schematic top view of an epitaxial wafer provided by an embodiment of the application.
  • the epitaxial wafer 20 includes a plurality of Micro-LED chips 200 arranged in an array.
  • the Micro-LED chip 200 includes a stacked substrate, an n-type layer, an active layer, and a p-type layer.
  • the p-type layer and the p-type layer are respectively provided with n-type electrodes and p-type electrodes (not shown in the figure).
  • the Micro-LED chip is transferred to the drive substrate, the p-type electrode and n-type electrode of each Micro-LED chip and The corresponding driving circuit is electrically connected and can be used to realize the display function.
  • step S130 the epitaxial wafer is cut according to the array rows and the array columns to form a plurality of Micro-LED chips.
  • the epitaxial wafer is cut according to the row and column directions to form multiple Micro-LED chips.
  • step S140 the multiple Micro-LED chips are aligned and transferred to the drive substrate, and each Micro-LED chip is electrically connected to a corresponding drive circuit unit of the multiple drive circuit units.
  • the Micro-LED chips arranged in an array on the epitaxial wafer are cut in rows and columns to form multiple Micro-LED chips, and then the multiple Micro-LED chips are aligned and transferred to the drive substrate.
  • Each Micro-LED chip is electrically connected to a corresponding driving circuit unit of the plurality of driving circuit units, which realizes the selective transfer of the Micro-LED chip, which is beneficial to the preparation of a high-resolution display device.
  • aligning and transferring a plurality of Micro-LED chips to a driving substrate, and electrically connecting each Micro-LED chip with a corresponding driving circuit unit of the plurality of driving circuit units includes: providing a chip carrier substrate, The chip carrying substrate includes a plurality of chip carrying positions corresponding to the plurality of driving circuit units on the driving substrate; placing at least one Micro-LED chip on the chip carrying position;
  • FIG. 4 is a schematic structural diagram of a chip carrier substrate provided by an embodiment of the application. 4, the chip carrier substrate 30 includes a plurality of chip carrier positions 301, and the plurality of chip carrier positions 301 form a "T" pattern. After placing a plurality of Micro-LED chips in a "T" pattern, they can be transferred at one time. Multiple Micro-LED chips with a "T" pattern realize the optional transfer of Micro-LED chips and improve the flexibility of transfer.
  • a laser is used to cut the epitaxial wafer along the rows and columns of the array to form a plurality of Micro-LED chips.
  • the use of laser cutting can ensure good cutting quality and cutting efficiency.
  • a suitable laser can be used to cut epitaxial wafers to form Micro-LED chips. Examples of this application Not limited.
  • the Micro-LED chip is aligned and transferred to the driving substrate by flip-chip.
  • Flip Chip is based on the traditional process.
  • the light-emitting area and electrode area of the chip are not designed on the same plane. At this time, the electrode area faces the drive substrate for mounting, which can save the need for bonding wires.
  • One process is conducive to reducing the size of the chip.
  • FIG. 5 is a schematic structural diagram of a flip-chip Micro-LED chip provided by an embodiment of the application.
  • the flip-chip Micro-LED chip includes a stacked substrate 1, an n-type layer 2, an active layer 3, and a p-type Layer 4, n-type layer 2 and p-type layer 4 are respectively provided with n-type electrode 5 and p-type electrode 6, wherein substrate 1 may be a sapphire substrate, n-type layer 2 and p-type layer 4 may be n-type GaN and For p-type GaN, the active layer 3 may be a multiple quantum well formed of stacked GaN and InGaN, and the n-type electrode 5 and the p-type electrode 6 may be formed of commonly used metal materials, such as Ti, Al, Ni, Au, etc.
  • each Micro-LED chip before aligning and transferring the multiple Micro-LED chips to the drive substrate, it further includes: providing conductive glue on the side where each Micro-LED chip is electrically connected to the drive circuit unit, or on the drive substrate Conductive glue is arranged on each drive circuit unit; each Micro-LED chip is electrically connected to the corresponding drive circuit unit through the conductive glue.
  • each Micro-LED chip and the drive substrate are respectively provided with alignment marks; when each Micro-LED chip is aligned and transferred to the drive substrate, the alignment marks of each Micro-LED chip and the drive substrate Match each other.
  • each Micro-LED chip and the corresponding position of the drive substrate can be provided with matching alignment marks, such as cross, star marks and other shapes that match each other after alignment.
  • matching it indicates that each Micro-LED chip and the driving substrate have been accurately aligned, and the alignment mark can be completed by means of image recognition and other means to improve the transfer efficiency of the Micro-LED chip.
  • aligning and transferring the plurality of Micro-LED chips to the driving substrate includes: sequentially aligning and transferring the Micro-LED chips of different light-emitting colors to the driving substrate.
  • each Micro-LED chip emits light of one color
  • the light-emitting colors of the plurality of Micro-LED chips include red, green, and blue.
  • a red micro-LED chip array, a green micro-LED chip array, and a blue micro-LED chip array can be formed on different epitaxial wafers, and then cut to form three kinds of Micro-LED chips. -The LED chip is transferred to the drive substrate to achieve color display.
  • the method further includes: forming the first color quantum dots on the side of the (3N-2)th column of the Micro-LED chips away from the driving substrate Light-emitting layer; the second color quantum dot light-emitting layer is formed on the side of the (3N-1)th column of Micro-LED chips away from the drive substrate; wherein, the drive substrate includes 3N columns of Micro-LED chips, and the Micro-LED in each column The light-emitting colors of the chips are the same; N is a natural number greater than or equal to 1.
  • the first color quantum dot light-emitting layer is formed on the side of the Micro-LED chip in the (3M-2) row away from the drive substrate; and formed on the side of the Micro-LED chip in the (3M-1) row away from the drive substrate
  • the second color quantum dot light-emitting layer wherein the driving substrate includes 3M rows of Micro-LED chips, and the Micro-LED chips in each row have the same light-emitting color; M is a natural number greater than or equal to 1.
  • the light-emitting color of the plurality of Micro-LED chips is blue; the first color is red and the second color is green; or the first color is green and the second color is red.
  • quantum dots are nano-scale semiconductors. By applying a certain electric field or light pressure to this nano-semiconductor material, they will emit light of a specific frequency, and the frequency of the emitted light will change As the size of this semiconductor changes, the color of the light emitted can be controlled by adjusting the size of this nano-semiconductor. Because this nano-semiconductor has the characteristic of limiting electrons and electron holes (Electron Hole), This feature is similar to atoms or molecules in nature, so they are called quantum dots. For example, red and green quantum dot materials can be excited by blue light to produce red and green light sources, and color display can be realized with blue light sources.
  • the blue Micro-LED chip can be transferred to the drive substrate first, and then the first color quantum dot light-emitting layer can be formed in the 1, 4, 7, ... (3N-2) columns respectively, and in the 2, 5, 8,...(3N-1) columns form the second color quantum dot light-emitting layer, or the first color quantum dot light-emitting layers are formed in the 1, 4, 7,...(3M-2) rows, respectively, in the second, 5, 8, ... (3N-1) rows form the second color quantum dot light-emitting layer, where N and M are natural numbers greater than or equal to 1, the first color can be red, and the second color can be green or the first color It can be green, and the second color can be red, thereby forming a display panel that can realize color display.
  • FIG. 6 shows a schematic diagram of a color Micro-LED display panel.
  • the display panel includes 9 ⁇ 9 Micro-LED chips, among which the first, fourth, and seventh rows of Micro-LED chips 201 emit red light, and the second, fifth, and eighth rows of Micro-LED chips 202 emit green light.
  • the third, sixth, and ninth rows of Micro-LED chips 203 emit blue light, and three Micro-LED chips emitting light of different colors form a pixel 300.
  • An embodiment of the present application also provides a Micro-LED display device, which is manufactured using the Micro-LED chip transfer method described in any of the foregoing embodiments.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
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Abstract

La présente invention concerne, selon des modes de réalisation, un procédé de transfert de puce à micro-LED, et un dispositif terminal. Le procédé comprend : la fourniture d'un substrat d'excitation, le substrat d'excitation comprenant une pluralité d'unités de circuit d'excitation agencées en un réseau ; la fourniture d'une tranche épitaxiale, la tranche épitaxiale comprenant une pluralité de puces à micro-LED agencées en un réseau ; et la coupe de la tranche épitaxiale selon les rangées du réseau et les colonnes du réseau pour former une pluralité de puces à micro-LED ; et l'alignement de la pluralité de puces à micro-LED et le transfert de celles-ci au substrat d'excitation, chaque puce à micro-LED étant électriquement connectée à une unité de circuit d'excitation correspondante dans la pluralité d'unités de circuit d'excitation.
PCT/CN2019/100968 2019-07-02 2019-08-16 Procédé de transfert de puce à micro-led, et dispositif d'affichage WO2021000384A1 (fr)

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CN201910588798.9A CN110310907B (zh) 2019-07-02 2019-07-02 一种Micro-LED芯片转移方法及显示装置
CN201910588798.9 2019-07-02

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CN112967951A (zh) * 2021-01-29 2021-06-15 天马微电子股份有限公司 一种发光元件组装系统及组装方法
WO2024092560A1 (fr) * 2022-11-02 2024-05-10 京东方科技集团股份有限公司 Procédé d'étalonnage de multiples systèmes de coordonnées et d'alignement de dispositifs, et dispositif de transfert de masse

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CN110767582B (zh) * 2019-11-06 2020-05-26 广东工业大学 一种Micro-LED芯片的转移方法
CN111341682A (zh) * 2020-02-09 2020-06-26 纳晶科技股份有限公司 一种显示基板的芯片检修装置及检修方法
CN112117297A (zh) * 2020-10-22 2020-12-22 中国科学院长春光学精密机械与物理研究所 全彩色Micro LED阵列结构及其制备方法
CN113451274B (zh) * 2020-10-28 2022-08-05 重庆康佳光电技术研究院有限公司 Led芯片组件、显示面板及制备方法
CN115714153A (zh) * 2022-01-28 2023-02-24 福建兆元光电有限公司 一种全彩色量子点转换装置及其制造方法、显示芯片模组

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WO2024092560A1 (fr) * 2022-11-02 2024-05-10 京东方科技集团股份有限公司 Procédé d'étalonnage de multiples systèmes de coordonnées et d'alignement de dispositifs, et dispositif de transfert de masse

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