KR20190115838A - Display appartus using one chip type led and fabrication method of the same - Google Patents

Abstract

Disclosed are a display device using a one chip type light emitting diode and a method of manufacturing the same. In the display device according to an embodiment of the present invention, at least one light emitting element and driving element are disposed on a substrate for a display panel. In the light emitting element, a first metal layer, a light emitting layer, and a second metal layer are disposed horizontally while being sequentially in contact with one another. It is possible to manufacture a reliable display device quickly.

Description

DISPLAY APPARTUS USING ONE CHIP TYPE LED AND FABRICATION METHOD OF THE SAME}

The present invention relates to a display device, and more particularly, to a display device using a one-chip type light emitting diode and a method of manufacturing the same.

A light emitting diode (LED) is one of light emitting devices that emit light when a current is applied. Light emitting diodes can emit high-efficiency light at low voltage, resulting in excellent energy savings. Recently, the luminance problem of the light emitting diode has been greatly improved, and has been applied to various devices such as a backlight unit, a display board, a display, and a home appliance of a liquid crystal display.

Recently, display devices using light emitting diodes have been actively developed. Most display device technologies use three light emitting diode (red, green, blue) chips to implement one pixel. However, since the driving current is different for each chip, it is difficult to configure the same driving circuit. In addition, different types of light emitting diode chips have different disadvantages.

Micro light-emitting diodes (μμ-LEDs) are very small, ranging from 5μm to 200μm, and require more than 25 million pixels to implement a 40-inch display device. Therefore, there is a problem that it takes at least one month in time for a simple pick and place method to make a 40-inch display device.

Patent Application Publication No. 10-1100579, Publication Date January 13, 2012 Patent Application Publication No. 10-0696445, Publication Date March 19, 2007

In order to solve the problems of the prior art, an object of the present invention is to form a plurality of light emitting devices each including a plurality of unit cells in the form of a plurality of pixel array, and then dicing them into a pixel array unit, the display panel substrate Disclosed is a display device using a one-chip type light emitting diode and a method of manufacturing the same, wherein a plurality of wavelength conversion layers are formed in each unit cell after soldering on a pixel array basis.

However, the object of the present invention is not limited to the above objects, and may be variously expanded within a range without departing from the spirit and scope of the present invention.

In order to achieve the object of the present invention, a display device according to an aspect of the present invention is one or more light emitting elements and driving elements are disposed on a substrate for a display panel, the light emitting element is a first metal layer, a light emitting layer and a second metal layer These may be sequentially arranged horizontally.

According to another aspect of the present invention, a display apparatus includes a substrate for a display panel; A metal pad disposed on the display panel substrate; A plurality of light emitting elements electrically connected to the upper portions of the metal pads, each of the plurality of unit cells emitting light of different wavelengths, the plurality of light emitting elements being arranged in the form of a plurality of pixel arrays; And a plurality of driving elements disposed on the display panel substrate and electrically driving each of the plurality of light emitting elements. A first metal layer formed on one side of the light emitting layer; And a second metal layer formed on the other side of the light emitting layer, wherein the first metal layer, the light emitting layer, and the second metal layer may be sequentially arranged horizontally.

The metal pad may include a first metal pad and a second metal pad disposed to be spaced apart from the first metal pad by a predetermined distance, wherein the first metal layer is electrically connected to the first metal pad, and the second metal pad is electrically connected to the first metal pad. A metal layer may be electrically connected to the second metal pad.

Further, the first metal layer includes a first conductive layer and a first bonding material layer, the second metal layer includes a second conductive layer and a second bonding material layer, and the first bonding material layer is the first bonding layer. The second pad may be electrically connected to the metal pad, and the second bonding material layer may be electrically connected to the second metal pad.

The light emitting layer may include a + EPI layer, an active layer, and an -EPI layer, which are sequentially arranged horizontally, and have the -EPI layer and the second metal layer as a common layer, and the active layer, the + EPI layer, and the first metal layer. May be separated into a plurality to form a unit cell.

In addition, a trench may be formed in each of the plurality of unit cells through an etching process from the first metal layer to the + EPI layer and the active layer.

The plurality of unit cells may include a first unit cell emitting light of a red wavelength, a second unit cell emitting light of a green wavelength, a third unit cell emitting light of a blue wavelength, or the plurality of unit cells. The unit cell may include a first unit cell emitting light of a first red wavelength, a second unit cell emitting light of a second red wavelength, a third unit cell emitting light of a green wavelength, and emitting light of a blue wavelength. It may include a third unit cell.

The display device according to the present invention may further include a wavelength conversion layer formed on the light emitting layer, wherein the wavelength conversion layer may include a quantum dot phosphor or a YAG phosphor.

In the method of manufacturing a display device according to an aspect of the present invention, after forming a light emitting layer in the form of a pixel array of at least one of a row or a column on a growth substrate, a first metal layer and a second metal layer are laminated on and under the light emitting layer. To form a light emitting structure; Etching the light emitting structure in a predetermined pattern; Dicing the light emitting structure in pixel array units to form a light emitting device array including a plurality of light emitting devices; Horizontally arranging the vertically stacked array of light emitting devices on a substrate for a display panel; And electrically connecting the light emitting device array to the substrate for the display panel.

The forming of the light emitting structure may include forming a light emitting layer in the form of a pixel array of one or more rows or columns on the growth substrate, and then forming a first metal layer on the light emitting layer; Adhering a jig on top of the first metal layer and removing the growth substrate; And forming the light emitting structure by removing the jig after forming a second metal layer under the light emitting layer.

In addition, the method of manufacturing a display apparatus according to the present invention includes forming a metal pad on which the light emitting element is electrically connected and a driving element electrically driving the light emitting element connected to the metal pad on the display panel substrate; The method may further include soldering the light emitting device in the light emitting device array to be electrically connected to the metal pad.

In addition, the manufacturing method of the display device according to the present invention further comprises the step of forming a wavelength conversion layer on the light emitting element, wherein in the step of forming the wavelength conversion layer of any one of the quantum dot phosphor and YAG phosphor The phosphor solution containing phosphor and silicon may be formed by printing or dispensing.

In addition, the method of manufacturing the display device according to the present invention may further include forming a protective layer protecting the light emitting device and the wavelength conversion layer formed on the light emitting device.

In addition, the first metal layer may include a first conductive layer and a first bonding material layer, and the second metal layer may include a second conductive layer and a second bonding material layer.

The light emitting layer may include a -EPI layer, an active layer, and an + EPI layer sequentially stacked, and in the etching, the first bonding material layer, the first conductive layer, the + EPI layer and the active layer of the light emitting layer may be formed. Dry etching may be performed to form a trench for dividing the plurality of unit cells.

As such, the present invention forms a plurality of light emitting devices each including a plurality of unit cells in the form of a plurality of pixel arrays, and then dices them into pixel array units and solders each pixel array unit onto a display panel substrate. By forming a plurality of wavelength conversion layers in a cell, the pick-and-place that directly transfers the LEDs up to the wavelength conversion layer one by one is directly transferred to the substrate for display panel provided with the driving element and the metal pad. & Place) is very fast compared to the process, which can significantly reduce the manufacturing time of the display device having tens of thousands of pixels.

Further, in the present invention, since the pixels (red, green, blue) are formed using the same blue LED, it is possible to drive under the same conditions and to quickly manufacture a reliable display device.

In addition, the present invention is formed in a structure that the current flows in one direction through the conductive layer and the light emitting layer, it is easy to design the current and can maximize the luminous efficiency.

In addition, in the present invention, since a bonding material layer exists on the same plane as the light emitting layer and the conductive layer, soldering may be performed directly on a chip scale without wire bonding.

However, the effects of the present invention are not limited to the above effects, and may be variously extended within a range without departing from the spirit and scope of the present invention.

1 illustrates a display device according to an embodiment of the present invention.
FIG. 2 is an enlarged view of one pixel area in the display device illustrated in FIG. 1.
3 is a cross-sectional view taken along the line AA ′ of one pixel area in the display device.
FIG. 4 is a perspective view of one pixel area in the display device shown in FIG. 2.
5 is a diagram illustrating a manufacturing method of a display apparatus according to an exemplary embodiment.
6A to 6M are diagrams for describing a manufacturing process of the display apparatus of FIG. 5.

DETAILED DESCRIPTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain shapes, structures, and characteristics described herein may be embodied in other embodiments without departing from the spirit and scope of the invention with respect to one embodiment. In addition, it is to be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. Like reference numerals in the drawings refer to the same or similar functions throughout the several aspects.

Hereinafter, a display device using a one-chip type light emitting diode according to an exemplary embodiment of the present invention and a manufacturing method thereof will be described with reference to the accompanying drawings. Particularly, in the present invention, after forming a plurality of light emitting devices each including a plurality of unit cells in the form of a plurality of pixel arrays, dicing them in pixel array units and soldering them in pixel array units on a display panel substrate, and then each unit A novel fabrication method and a display device fabricated by the fabrication method are proposed, in which a plurality of wavelength conversion layers are formed in a cell.

In general, micro LED is a technology for manufacturing a display by attaching ultra-small LED particles having a size of 5 ~ 100㎛ to a substrate, which is attracting attention as a next generation TV panel. It is suitable for implementing flexible or rollable screens by utilizing the LED chip itself as pixels (pixels), and it has excellent response speed and brightness while using less power than OLED. These micro LEDs have a horizontal chip, a vertical chip, and flip chips according to their structure, and these chips have a structure in which the EPI and the metal electrode do not exist on the same plane. have. In particular, vertical chips cannot be soldered at the chip scale because the electrodes are not coplanar in structure, and flip chips can be soldered at the chip scale, but the current flow is not unidirectional as the vertical chip. Difficult to design and low light efficiency. Accordingly, the present invention proposes a display device using a light emitting diode of one chip type, which is a new structure using only advantages of a vertical chip and a flip chip, and a manufacturing method thereof.

1 is a diagram illustrating a display apparatus according to an exemplary embodiment of the present invention, FIG. 2 is an enlarged view of one pixel region in the display apparatus illustrated in FIG. 1, and FIG. 3 is a diagram illustrating one pixel region in the display apparatus. 4 is a perspective view of one pixel area in the display device shown in FIG. 2.

Referring to FIG. 1, a display device according to an exemplary embodiment may include a substrate 100, a metal pad 200, a light emitting device 300, and a driving device 400.

The substrate 100 may be a substrate for a display panel of the display device. The substrate 100 may be a material capable of transmitting all or part of light. For example, the substrate 100 may be a glass substrate, or may be a plastic substrate.

The substrate 100 may be one of a flexible film, a metal PCB, and a ceramic PCB.

The substrate 100 includes an upper surface 110 and a lower surface. A plurality of light emitting devices 300 may be disposed on the top surface 110 of the substrate 100. The upper surface 110 and the lower surface of the substrate 100 may have a large area. For example, the diagonal length of the top surface 110 may be several tens of inches.

The substrate 100 may be a planar substrate or a curved substrate. When the substrate 100 is a flat substrate, the upper surface 110 of the substrate 100 may be a flat surface. Meanwhile, when the substrate 100 is a curved substrate, the upper surface 110 of the substrate 100 may include a curved surface in which all or part of the substrate 100 is curved.

The substrate 100 may be a rigid material or may be a flexible material.

The metal pad 200 may be disposed on the substrate 100. The metal pad 200 may include a first metal pad 201 electrically connected to one side of the light emitting device 300 and a first metal pad spaced apart from the first metal pad by a predetermined distance, and electrically connected to the other side of the light emitting device 300. 2 may include a metal pad 220.

The light emitting device 300 may be disposed on the substrate 100. In detail, the light emitting device 300 may be disposed to be electrically connected to an upper portion of the metal pad 200 formed on the substrate 100. The plurality of light emitting devices 300 are arranged in an array form on the substrate 100. In the present invention, the structure arranged in the form of a pixel array is referred to as a pixel bar.

Referring to FIG. 2, one light emitting device 300 is disposed for each pixel, and one light emitting device 300 may include a plurality of unit cells 300a, 300b, and 300c. The plurality of unit cells 300a, 300b, and 300c may emit light having different wavelengths. For example, the first unit cell 300a emits light having a red wavelength, the second unit cell 300b emits light having a green wavelength, and the third unit cell 300c emits light having a blue wavelength.

Although three unit cells are described as an example, two unit cells or four or more unit cells may be used as necessary.

Referring to FIG. 3, one light emitting device 300 includes a light emitting layer 310, a first conductive layer 320a, and a first metal layer 320 and a second conductive layer (including the first bonding material layer 320a). 330a) and a second metal layer 330 including a second bonding material layer 330b, wherein the light emitting layer 310 includes an -EPI layer 311, an active layer 312, and a + EPI layer 313. It may include. Each layer of the light emitting device 300 may be disposed horizontally on the substrate.

Referring to FIG. 4, one light emitting device 300 includes a plurality of unit cells 300a, 300b, and 300c, and the plurality of unit cells 300a, 300b, and 300c may include -EPI layers of the light emitting layer 310. 311 and the second metal layer 330, that is, the second conductive layer 330a and the second bonding material layer 330b as a common layer, the active layer 312 and the + EPI layer 313 of the light emitting layer 310 The first metal layer 320, that is, the first conductive layer 320a and the first bonding material layer 320b are separated into a plurality of layers.

At this time, the trench between the active layer 312, the + EPI layer 313, the first metal layer 320, that is, the first conductive layer 320a and the first bonding material layer 320b of the emission layer 310 is etched. It is formed through the process.

FIG. 5 is a diagram illustrating a manufacturing method of a display apparatus according to an exemplary embodiment, and FIGS. 6A to 6M are diagrams for describing a manufacturing process of the display apparatus of FIG. 5.

Referring to FIG. 5, a method of manufacturing a display device according to an embodiment of the present invention may include driving device / metal pad forming step (S510), emitting layer growing step (S520), laminating step (S530), etching step (S540), A dicing step S550, a soldering step S560, a conversion layer forming step S570, and a protective layer forming step S580 may be included.

1) In the driving device / metal pad forming step (S510), as shown in FIG. 6A, the metal pad 200 and the driving device 400 are disposed on the display panel substrate 100 of the display device according to the exemplary embodiment of the present invention. (A) is a perspective view, (b) shows a side view.

The metal pad 200 may include a first metal pad 210 and a second metal pad 220, and a plurality of first metal pads 210 may be individually connected to one side of each of the plurality of light emitting devices in the light emitting device array. The second metal pad 220 is disposed to be commonly connected to the other side of each of the plurality of light emitting devices in the light emitting device array.

The driving device 400 is disposed above the substrate 100, is disposed adjacent to the first metal pad 210, and electrically drives the light emitting device connected to the first metal pad 210. A plurality of driving devices 400 may be disposed to drive each of the plurality of unit cells in the light emitting device, and may be disposed to correspond one-to-one with the unit cells.

The driving device 400 may be a semiconductor driving circuit including a thin film transistor (TFT). The TFT may be electrically connected to the adjacent light emitting devices, and may control driving of the adjacent light emitting devices according to an external control signal.

2) In the light emitting layer growth step (S520), as shown in FIG. 6B, the light emitting layer 310, that is, the -EPI layer 311, the active layer 312, and the + EPI layer 313 may be grown on the growth substrate 10. . As a growth substrate for GaN growth, a sapphire substrate, which is relatively stable at a high temperature and is inexpensive, is widely used. Since the sapphire substrate is an insulator substrate, both the n electrode and the p electrode must be formed in the light emitting layer. That is, the light emitting layer 310 may be composed of -EPI 311, active layer 312, and + EPI 313. The -EPI 311 may be an nGaN layer, and the + EPI 313 may be a pGaN layer.

3) In the stacking step S530, a metal layer, that is, a conductive layer and a bonding material layer, may be sequentially stacked on the upper and lower portions of the light emitting layer 310 grown on the growth substrate. In this case, the conductive layer and the bonding material layer are formed on the upper and lower portions of the light emitting layer so as to be symmetrical to each other.

Specifically, 3-1) as shown in FIG. 6C, the first metal layer, that is, the first conductive layer 320a and the first bonding material layer 320b, is disposed on the light emitting layer 310, that is, the + EPI 313. It can be laminated sequentially.

3-2) as shown in FIG. 6D, the jig 20 may be adhered to the stacked first bonding material layer 320b.

3-3) as shown in FIG. 6E, the growth substrate 10 on which the light emitting layer 310 is grown may be removed. In this case, the growth substrate such as the sapphire substrate may be peeled off by a laser lift-off method, a chemical lift-off method, or the like.

3-4) as shown in FIG. 6F, the second metal layer, that is, the second conductive layer 330a and the second bonding material layer 330b may be sequentially stacked below the light emitting layer 310, that is, the -EPI 311. have.

3-5) as shown in FIG. 6g, when the lamination of the first metal layer and the second metal layer on the upper and lower portions of the light emitting layer 310 is completed, the jig 20 adhered to the upper portion of the first bonding material layer 320b is removed. The light emitting structure may be sequentially formed on the first bonding material layer, the first conductive layer, the light emitting layer, the second metal layer, and the second bonding material layer.

At this time, each of the conductive layer, that is, the first conductive layer and the second conductive layer is made of a metal material of any one of copper (Cu), silver (Ag), and gold (Au), and has a thickness of 10 μm to 100 μm. It can be formed within a range. In addition, each of the bonding material layers, that is, the first bonding material layer and the second bonding material layer, may be formed of any one of gold-tin (AuSn), lead (Pb), copper (Cu), silver (Ag), and gold (Au). It may be made of a metallic material.

4) In the etching step (S540), as shown in FIG. 6H, the light emitting structure may be fully dry etched so that a trench is formed in a predetermined pattern. In this case, the trench may be formed from the first bonding material layer 320b of the light emitting structure to the first conductive layer 320a, the + EPI layer 313 and the active layer 312 of the light emitting layer in unit cell units.

That is, dry etching is performed from the first bonding material layer 320b to the first conductive layer 320a, the + EPI layer 313 and the active layer 312 of the emission layer to form a trench for separating each unit cell. Can be. That is, since the -EPI layer 311, the second conductive layer 330a, and the second bonding material layer 330b of the emission layer are not separated, the unit cells may be the common layer. The plurality of unit cells thus formed may be three or more.

In this case, the size of the trench between the plurality of unit cells constituting one light emitting device is the same, but smaller than the size of the trench between the plurality of light emitting devices.

5) In the dicing step S550, the light emitting structure is composed of a plurality of pixel arrays including a plurality of light emitting elements as shown in FIG. The light emitting structure may be diced in pixel array units to form a light emitting device array including a plurality of light emitting devices, that is, a pixel bar. The cross section of the thus formed light emitting device, that is, the cross section cut in the direction in which each layer of the light emitting device is stacked may be rectangular or square. Here, the light emitting element array includes a plurality of light emitting elements arranged in the same pixel array.

6) In the soldering step (S560), by placing each layer of the light emitting device in the diced light emitting device array as shown in Figure 6j so as to be located on the same plane, the bonding material layer formed on the upper and lower portions of the light emitting device, that is, The first bonding material layer 320b and the second bonding material layer 330b may be soldered to be electrically connected to the metal pads 210 and 220 on the substrate.

In this case, the light emitting device may be classified into various LEDs, for example, micro LEDs of 20 μm to 200 μm, mini LEDs of 200 μm to 600 μm, and general LEDs of 600 μm or more.

7) In the conversion layer forming step (S570), a wavelength conversion layer 340 for emitting light of different wavelengths can be formed on the soldered light emitting device as shown in FIG. The wavelength conversion layer 340 may be formed using a quantum dot phosphor or a YAG phosphor. The wavelength conversion layer 340 may be formed by coating or dispensing a phosphor solution in which any one of the quantum dot phosphor and the YAG phosphor and silicon are mixed.

In particular, the wavelength conversion layer 340 according to an embodiment of the present invention may form one of three colors, for example, red, green, and blue, through wavelength conversion using a quantum dot phosphor. Here, the quantum dot is a semiconductor crystal material having a diameter of several tens of nanometers or less, and refers to particles having specific electrical and optical properties. It is a material with high color purity and light stability.

The wavelength conversion layer may be formed on the light emitting device, and may be formed larger than the upper areas of the first conductive layer and the light emitting layer second conductive layer constituting the light emitting device.

Referring to FIG. 6L, one light emitting device corresponding to one pixel in a pixel line or pixel array includes a plurality of unit cells in which different wavelength conversion layers are formed. For example, a red wavelength conversion layer 340a is formed on the first unit cell 300a positioned in the red emission region, and a green wavelength conversion layer (above the upper portion of the second unit cell 300b located in the green emission region. 340b may be formed, and a blue wavelength conversion layer 340c may be formed on the third unit cell 300c positioned in the blue emission region.

In this case, the RGB pixel forms a wavelength conversion layer in the RGB light emitting area using a light emitting element emitting blue light as a light source, a red wavelength conversion layer in the red light emitting area, and a green wavelength conversion in the green light emitting area. Although the layer is formed, the wavelength conversion layer may not be separately formed in the blue light emitting region. This case corresponds to a case where the wavelength of light to be emitted from the unit cell is the same as the wavelength of light emitted from the active layer in the cell.

That is, the green wavelength conversion layer formed in the green light emitting area converts blue light emitted from the light emitting device into green light, and the red wavelength conversion layer formed in the red light emitting area converts blue light emitted from the light emitting device into red light. Let's do it.

8) In the forming of the protective layer (S580), as shown in FIG. 6M, a protective layer 350 may be formed to encapsulate and protect the wavelength conversion layer formed on each of the plurality of unit cells constituting the light emitting device. The protective layer 350 may seal the unit cell to protect the unit cell from foreign matter or impact. By performing the encapsulation process of the unit cell, a display device according to an exemplary embodiment of the present invention illustrated in FIGS. 1 to 4 may be manufactured.

The protective layer 350 may be formed using an organic material such as silicon, epoxy, or an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx).

In addition, the driving device / metal pad forming step in the method of manufacturing the display device according to the present invention is described as the first step, but is not necessarily limited thereto and may be performed together with the process of forming the light emitting device.

In the method of manufacturing the display apparatus according to the exemplary embodiment of the present invention illustrated in FIGS. 5 to 6M described above, a plurality of light emitting devices 300 each including a plurality of unit cells are formed in a pixel array form, and then a pixel array is formed. Since a plurality of wavelength conversion layers are formed after dicing in units and soldering in a pixel array unit on the display panel substrate 100, a pick-and-place that directly transfers LEDs provided up to the wavelength conversion layer to the substrate 100 one by one. It is very fast compared to the Pick & Place process. Therefore, there is an advantage that the manufacturing time of a display device having tens of thousands of pixels is greatly shortened. In addition, since the pixels (red, green, blue) are formed using the same blue LED, there is an advantage that can be driven under the same conditions, and can quickly produce a reliable display device.

Features, structures, effects, etc. described in the above embodiments are included in one embodiment of the present invention, and are not necessarily limited to one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

10: growth substrate
20: jig
100: substrate
200: metal pad
300: light emitting element
310: light emitting layer
320: first metal layer
330: second metal layer
340 wavelength conversion layer
350: protective layer
400: drive element

Claims (16)

At least one light emitting device and a driving device are disposed on a substrate for a display panel,
The light emitting device is a display device wherein the first metal layer, the light emitting layer and the second metal layer are sequentially arranged in a horizontal position. A display panel substrate;
A metal pad disposed on the display panel substrate;
A plurality of light emitting elements electrically connected to the upper portions of the metal pads, each of the plurality of unit cells emitting light of different wavelengths, the plurality of light emitting elements being arranged in the form of a plurality of pixel arrays; And
And a plurality of driving elements disposed on the display panel substrate and electrically driving each of the plurality of light emitting elements.
The light emitting device,
Light emitting layer;
A first metal layer formed on one side of the light emitting layer; And
And a second metal layer formed on the other side of the light emitting layer, wherein the first metal layer, the light emitting layer, and the second metal layer are sequentially arranged horizontally. The method of claim 2,
The metal pad may include a first metal pad and a second metal pad disposed to be spaced apart from the first metal pad by a predetermined interval.
And the first metal layer is electrically connected to the first metal pad, and the second metal layer is electrically connected to the second metal pad. The method of claim 3,
The first metal layer comprises a first conductive layer and a first bonding material layer, the second metal layer comprises a second conductive layer and a second bonding material layer,
And the first bonding material layer is electrically connected to the first metal pad, and the second bonding material layer is electrically connected to the second metal pad. The method according to claim 1 or 2,
The emission layer includes a + EPI layer, an active layer, -EPI layer horizontally arranged,
And the -EPI layer and the second metal layer as a common layer, and the active layer, the + EPI layer and the first metal layer are separated into a plurality to form a unit cell. The method of claim 5,
And a trench for separating each of the plurality of unit cells through an etching process from the first metal layer to the + EPI layer and the active layer. The method of claim 2,
The plurality of unit cells may include a first unit cell emitting light of a red wavelength, a second unit cell emitting light of a green wavelength, and a third unit cell emitting light of a blue wavelength,
The plurality of unit cells may include a first unit cell emitting light of a first red wavelength, a second unit cell emitting light of a second red wavelength, a third unit cell emitting light of a green wavelength, and a blue wavelength. And a third unit cell for emitting light. The method of claim 2,
The light emitting device further includes a wavelength conversion layer formed on the light emitting layer,
And the wavelength conversion layer comprises a quantum dot phosphor or a YAG phosphor. Forming a light emitting layer in the form of a pixel array of at least one of rows or columns on the growth substrate, and then forming a light emitting structure by stacking a first metal layer and a second metal layer on and under the light emitting layer;
Etching the light emitting structure in a predetermined pattern;
Dicing the light emitting structure in pixel array units to form a light emitting device array including a plurality of light emitting devices;
Horizontally arranging the vertically stacked array of light emitting devices on a substrate for a display panel; And
Electrically connecting the array of light emitting elements to the substrate for a display panel. The method of claim 9,
Forming the light emitting structure,
Forming a light emitting layer in the form of a pixel array of at least one of rows or columns on the growth substrate, and then forming a first metal layer on the light emitting layer;
Adhering a jig on top of the first metal layer and removing the growth substrate;
And forming the light emitting structure by removing the jig after forming a second metal layer under the light emitting layer. The method of claim 9,
Forming a metal pad on which the light emitting device is electrically connected and a driving device to electrically drive the light emitting device connected to the metal pad on the display panel substrate;
In the connecting step, soldering the light emitting devices in the light emitting device array to be electrically connected to the metal pads. The method of claim 9,
Forming a wavelength conversion layer on the light emitting device;
In the step of forming the wavelength conversion layer, a method of manufacturing a display device, which is formed by printing or dispensing the phosphor solution containing silicon and any one of the quantum dot phosphor and YAG phosphor. The method of claim 9,
And forming a protective layer protecting the light emitting element and the wavelength conversion layer formed on the light emitting element. The method of claim 9,
Wherein the first metal layer comprises a first conductive layer and a first bonding material layer, and the second metal layer comprises a second conductive layer and a second bonding material layer. The method of claim 14,
The light emitting layer includes a -EPI layer, an active layer, + EPI layer sequentially stacked,
In the etching, dry etching may be performed to form a trench for dividing the plurality of unit cells from the first bonding material layer to the first conductive layer, the + EPI layer and the active layer of the emission layer. . A display device manufactured by the method of manufacturing a display device according to any one of claims 9 to 15.