JP2002141492A - Light-emitting diode display panel and manufacturing method thereof - Google Patents
Light-emitting diode display panel and manufacturing method thereofInfo
- Publication number
- JP2002141492A JP2002141492A JP2000331727A JP2000331727A JP2002141492A JP 2002141492 A JP2002141492 A JP 2002141492A JP 2000331727 A JP2000331727 A JP 2000331727A JP 2000331727 A JP2000331727 A JP 2000331727A JP 2002141492 A JP2002141492 A JP 2002141492A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light
- light emitting
- display panel
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオードデ
ィスプレイパネル及びその製造方法に係り、詳しくは、
アクティブマトリックス駆動でき、小型、高精細で、か
つ駆動回路も一体化した発光ダイオードディスプレイパ
ネル及びその製造方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a light emitting diode display panel and a method for manufacturing the same, and more particularly, to a light emitting diode display panel.
The present invention relates to a light emitting diode display panel that can be driven in an active matrix, is small, has high definition, and has an integrated driving circuit, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】半導体発光ダイオード（Ｌｉｇｈｔ Ｅ
ｍｉｔｔｅｄ Ｄｉｏｄｅ：以下「ＬＥＤ」という。）
を用いたディスプレイはそれが自発光タイプであること
から、高性能でコンパクトなディスプレイを実現し得る
ものとして期待されている。実際に、野外での大画面の
フルカラーディスプレイとして、赤、緑、青それぞれの
パッケージングされたＬＥＤを二次元的にアレイにして
ならべることで、高輝度、高コントラストのディスプレ
イが実現されている。2. Description of the Related Art Semiconductor light emitting diodes (Light E)
mitted Diode: Hereinafter referred to as “LED”. )
Is a self-luminous type, and is expected to realize a high-performance and compact display. In fact, a high-brightness, high-contrast display is realized by arranging red, green, and blue packaged LEDs in a two-dimensional array as a large-screen full-color display outdoors.
【０００３】しかしながら、上記のように個々のＬＥＤ
をアレイ化する方法では、小型で高精細なディスプレイ
を実現することは困難であった。However, as described above, individual LEDs
It has been difficult to realize a small and high-definition display by the method of arraying.
【０００４】この問題を解決すべく、例えば特開平１０
−１２９３２号公報では、ＬＥＤを作製する基板上で、
ＬＥＤアレイを作製し、さらにＬＥＤを駆動する電極と
なるパッドを積層してＬＥＤと同じ面に作製すること
で、ディスプレイパネルの小型化とＬＥＤアレイの高密
度化、即ち高精細化を図っている。In order to solve this problem, for example, Japanese Patent Application Laid-Open
According to Japanese Patent No. 12932, on a substrate for manufacturing an LED,
An LED array is manufactured, and furthermore, a pad serving as an electrode for driving the LED is stacked and manufactured on the same surface as the LED, so that the size of the display panel is reduced and the density of the LED array is increased, that is, high definition is achieved. .
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、特開平
１０−１２９３２号公報に記載の方法を用いても、ＬＥ
Ｄを駆動する電極パッドの大きさや数により、ＬＥＤデ
ィスプレイの面積や画素の集積度が制限されてしまい、
より小型で高精細なＬＥＤディスプレイを実現するには
問題が残っている。However, even if the method described in JP-A-10-12932 is used, LE
Depending on the size and number of electrode pads for driving D, the area of the LED display and the degree of integration of pixels are limited,
Problems remain in achieving smaller and higher definition LED displays.
【０００６】さらに、上記の方法は、一種類の波長のＬ
ＥＤアレイによるディスプレイを実現するためのもの
で、フルカラー化された小型、高精細なＬＥＤディスプ
レイの提案には至っていないし、この提案例に限らず現
実に実現されてもいない。[0006] Further, the above-mentioned method uses L of one kind of wavelength.
This is for realizing a display using an ED array, and has not yet been proposed for a full-color, small-sized, high-definition LED display.
【０００７】本発明の目的は、上記課題に鑑み、一つの
ＬＥＤパネルにより、小型、高精細で、かつパネル駆動
用の駆動回路、及び周辺回路までをオンチップ化したＬ
ＥＤディスプレイパネル及びその製造方法を提供するこ
とにある。SUMMARY OF THE INVENTION In view of the above-described problems, an object of the present invention is to provide a small, high-definition, panel-driving drive circuit and a peripheral circuit on chip using a single LED panel.
An ED display panel and a method of manufacturing the same are provided.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成すべ
く、本発明のＬＥＤディスプレイパネルは、シリコン
（Ｓｉ）基板上に２次元アレイ配列されたＬＥＤ駆動回
路が形成され、そのそれぞれの駆動回路上にＬＥＤが積
層されていることを特徴とする。In order to achieve the above-mentioned object, an LED display panel according to the present invention comprises a two-dimensionally arrayed LED drive circuit formed on a silicon (Si) substrate, and the respective drive circuits are provided. It is characterized in that LEDs are stacked on top.
【０００９】また本発明のＬＥＤディスプレイパネル
は、シリコン基板上に、行選択線、画素駆動信号線、二
つの電源線、及び、複数のＭＯＳトランジスタまたはバ
イポーラトランジスタからなる発光ダイオード駆動回路
が２次元アレイ配列されて形成され、そのそれぞれの駆
動回路の上部に、該駆動回路の出力端と一方の電極が電
気的に接続された発光ダイオードが積層されていること
を特徴とする。この場合、ＬＥＤ駆動回路が、行選択線
と画素駆動信号線を入力とするナンドゲートと、そのナ
ンドゲートの出力を入力とするインバータとで構成され
ていることが好ましい。In the LED display panel according to the present invention, a two-dimensional array of a light emitting diode driving circuit including a row selection line, a pixel driving signal line, two power supply lines, and a plurality of MOS transistors or bipolar transistors is formed on a silicon substrate. A light-emitting diode, which is formed in an array and has an output terminal of the drive circuit and one electrode electrically connected to each other, is stacked above the respective drive circuits. In this case, it is preferable that the LED drive circuit includes a NAND gate having a row selection line and a pixel drive signal line as inputs, and an inverter having an output of the NAND gate as an input.
【００１０】また、これら本発明のＬＥＤディスプレイ
パネルにおいては、ＬＥＤが紫外光を発光するＬＥＤで
あり、ＬＥＤ上に紫外光を吸収して青、緑、赤色の光を
放射する蛍光体が積層されていること、或いは、ＬＥＤ
が青色を発光するＬＥＤであり、ＬＥＤ上に青色光を吸
収して緑、赤色の光を放射する蛍光体が積層されている
ことが好ましい。In the LED display panel of the present invention, the LED is an LED that emits ultraviolet light, and a phosphor that absorbs ultraviolet light and emits blue, green, and red light is laminated on the LED. Or LED
Is an LED that emits blue light, and a phosphor that absorbs blue light and emits green and red light is preferably laminated on the LED.
【００１１】さらに、ＬＥＤが、ＡｌＮ、ＧａＮ、Ｉｎ
Ｎ、及びこれらの混晶の窒化物半導体のいずれかで構成
されていること、或いは、ＩＩ−ＶＩ族化合物半導体で
構成されていることが好ましい。Further, when the LED is made of AlN, GaN, In,
It is preferable to be formed of N and any one of these mixed crystal nitride semiconductors, or to be formed of a II-VI group compound semiconductor.
【００１２】また本発明のＬＥＤディスプレイパネルの
製造方法は、一方のシリコン基板上にポーラスシリコン
層を介してＬＥＤを構成する層を成長させ、その上に陽
極電極を形成し、他方のシリコン基板上にＬＥＤの駆動
回路を形成して、一方のシリコン基板上に形成されたＬ
ＥＤの陽極電極の中心と、他方のシリコン基板上に形成
された駆動回路の出力パッドの中心とが一致するように
対向させ、加熱、加圧して張り合わせた後、上記ポーラ
スシリコン層を選択的に除去して、ＬＥＤを構成する層
の成長に用いたシリコン基板を剥離除去することを特徴
とする。Further, according to the method of manufacturing an LED display panel of the present invention, a layer constituting an LED is grown on one silicon substrate via a porous silicon layer, an anode electrode is formed thereon, and the other LED driving circuit is formed on the silicon substrate, and the LED driving circuit is formed on one silicon substrate.
The center of the anode electrode of the ED and the center of the output pad of the drive circuit formed on the other silicon substrate are opposed to each other, and after heating and pressing, the porous silicon layer is selectively bonded. The method is characterized in that the silicon substrate used for growing the layer constituting the LED is peeled off.
【００１３】上記ＬＥＤディスプレイパネルの製造方法
においては、他方のシリコン基板上に、行選択線、画素
駆動信号線、二つの電源線、及び、複数のＭＯＳトラン
ジスタまたはバイポーラトランジスタからなる発光ダイ
オード駆動回路が２次元アレイ配列されて形成されるこ
とが好ましい。In the above-described method for manufacturing an LED display panel, a row selection line, a pixel drive signal line, two power supply lines, and a light emitting diode drive circuit including a plurality of MOS transistors or bipolar transistors are provided on the other silicon substrate. It is preferable to form a two-dimensional array.
【００１４】[0014]
【発明の実施の形態】以下、本発明の好適な実施形態に
ついて説明するが、本発明は本実施形態に限られない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below, but the present invention is not limited to these embodiments.
【００１５】本発明は以下に示すような構成をとること
で、小型、高精細、駆動回路オンチップのＬＥＤディス
プレイパネルを実現しているものである。The present invention realizes a small-sized, high-definition, LED display panel having a driving circuit on a chip by adopting the following configuration.
【００１６】まず、シリコン（Ｓｉ）基板に通常のＣＭ
ＯＳプロセスを用いて、ＬＥＤ二次元アレイ駆動回路を
作り込む。ＬＥＤ駆動回路は一つのＬＥＤ素子に対して
一つ設け、行選択線、ＬＥＤ駆動信号線（画素駆動信号
線）、ＶＣＣとＧＮＤの二つの電源線、ナンドゲート一
つとインバータ一つで構成し、マトリクス状に配置す
る。例えば、この駆動回路を縦、横ともに１０μｍピッ
チで配置すると、ＳＶＧＡのパネル（８００行×６００
列）が１６ｍｍ×１２ｍｍ（４画素で３色を表示の場
合）のサイズで作ることができる。First, a normal CM is placed on a silicon (Si) substrate.
An LED two-dimensional array driving circuit is built using the OS process. One LED drive circuit is provided for one LED element, and is composed of a row selection line, an LED drive signal line (pixel drive signal line), two power lines of VCC and GND, one NAND gate and one inverter, and a matrix. Place in a shape. For example, when this drive circuit is arranged at a pitch of 10 μm both vertically and horizontally, an SVGA panel (800 rows × 600
Row) can be made with a size of 16 mm × 12 mm (when three colors are displayed with four pixels).
【００１７】ＬＥＤ駆動回路の構成は、ナンドゲートの
二つの入力線に、行選択線とＬＥＤ駆動信号線を接続
し、このナンドゲートの出力線をインバータの入力と
し、出力をＬＥＤ駆動回路の出力とする。このような構
成にすることで、選択された行、すなわち選択線にＨｉ
ｇｈの信号が与えられた行の駆動回路がＬＥＤ駆動信号
に従って駆動される。ＬＥＤ駆動回路の出力は、駆動回
路それぞれの直上に、例えば画素が１０μｍピッチとす
ると８μｍ角の金属による小さなパッドとして引き出さ
れる。In the configuration of the LED drive circuit, a row selection line and an LED drive signal line are connected to two input lines of the NAND gate, an output line of the NAND gate is used as an input of the inverter, and an output is used as an output of the LED drive circuit. . With such a configuration, the selected row, that is, the selection line is set to Hi.
The drive circuit of the row to which the signal gh is given is driven according to the LED drive signal. The output of the LED drive circuit is drawn out directly above each of the drive circuits as, for example, a small pad of 8 μm square metal when the pixels have a pitch of 10 μm.
【００１８】本実施形態のＬＥＤ駆動回路におけるナン
ドゲートと、そのナンドゲートの出力を入力とするイン
バータは、例えば複数のＭＯＳトランジスタまたは／及
びバイポーラトランジスタで構成することができる。The NAND gate and the inverter which receives the output of the NAND gate in the LED driving circuit according to the present embodiment can be constituted by, for example, a plurality of MOS transistors and / or bipolar transistors.
【００１９】次に、別の基板を用いてＬＥＤを結晶成長
により作成する。このとき、成長用の基板側からｎ型半
導体、活性層、ｐ型半導体となるように成長を行う。ｐ
型半導体上には、上記Ｓｉ基板上に配置した駆動回路の
出力パッドと同じピッチ、パターンで、尚且つそれより
も小さい金属電極のパターンを形成する。Next, an LED is formed by crystal growth using another substrate. At this time, growth is performed from the growth substrate side so as to become an n-type semiconductor, an active layer, and a p-type semiconductor. p
On the mold semiconductor, a metal electrode pattern having the same pitch and pattern as the output pads of the drive circuit arranged on the Si substrate and smaller than that is formed.
【００２０】ＬＥＤは、例えばＡｌＮ、ＧａＮ、Ｉｎ
Ｎ、及びこれらの混晶の窒化物半導体、或いはＩＩ−Ｖ
Ｉ族化合物半導体により形成する。LEDs are, for example, AlN, GaN, In
N, or a nitride semiconductor of these mixed crystals, or II-V
It is formed of a group I compound semiconductor.
【００２１】その後、ＬＥＤ層を成長用の基板から剥離
し、駆動回路が作り込まれたＳｉ基板に、駆動回路出力
パッドの中心と、ＬＥＤ陽極電極の中心が一致するよう
に接着し、電気的にも接続を取る。或いは、ＬＥＤ層の
成長が終わった基板をそのまま駆動回路が作り込まれた
Ｓｉ基板に、駆動回路出力パッドの中心と、ＬＥＤ陽極
電極の中心が一致するように接着した後にＬＥＤ層を成
長した際の基板を剥離してもよい。Thereafter, the LED layer is peeled off from the substrate for growth, and adhered to the Si substrate on which the drive circuit has been formed so that the center of the drive circuit output pad coincides with the center of the LED anode electrode. Also take a connection. Alternatively, when the LED layer is grown after the substrate on which the LED layer has been grown is adhered to the Si substrate on which the drive circuit has been formed so that the center of the drive circuit output pad and the center of the LED anode electrode coincide with each other. May be peeled off.
【００２２】そして、ＬＥＤ層の陰極側から、各駆動回
路に対応するサイズ、例えば１０μｍピッチ、８μｍ角
の大きさに各ＬＥＤを分離し、溝部分を絶縁物で埋め込
み、ｎ型半導体側は透明電極で基板一面に共通電極を形
成する。Then, each LED is separated from the cathode side of the LED layer into a size corresponding to each drive circuit, for example, 10 μm pitch, 8 μm square size, the groove portion is filled with an insulator, and the n-type semiconductor side is transparent. A common electrode is formed on one surface of the substrate with the electrode.
【００２３】その後、蛍光体を積層することでフルカラ
ーの小型、高精細なディスプレイパネルを得ることがで
きる。Thereafter, by stacking phosphors, a full-color, small-sized, high-definition display panel can be obtained.
【００２４】このような構成をとると、ディスプレイパ
ネルは、小型、高精細だけではなく、ＳｉのＣＭＯＳ回
路を同一パネルに集積できるため、ディスプレイパネル
にさまざまな電子回路を集積することができ、高機能な
パネルを同時に実現できる。With such a configuration, the display panel is not only small and high-definition, but also since it is possible to integrate Si CMOS circuits on the same panel, various electronic circuits can be integrated on the display panel. Functional panels can be realized at the same time.
【００２５】[0025]
【実施例】以下、本発明の好適な実施例について図面を
参照して詳細に説明するが、本発明は本実施例に限られ
ない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the drawings. However, the present invention is not limited to the embodiments.
【００２６】図１〜図５を用いて、本発明の実施例を説
明する。An embodiment of the present invention will be described with reference to FIGS.
【００２７】まず図２に示すように、Ｓｉ基板２０１に
通常のＣＭＯＳプロセスを用いて、行選択タイミング発
生回路を含むロジック回路部２０２、画素駆動信号発生
回路を含むロジック回路部２０３、及び画素ＬＥＤの駆
動回路２０４を作り込んだ。駆動回路のピッチは１０μ
ｍピッチとし、１２００行×１６００列のマトリクス配
列とした。First, as shown in FIG. 2, using a normal CMOS process on a Si substrate 201, a logic circuit section 202 including a row selection timing generation circuit, a logic circuit section 203 including a pixel drive signal generation circuit, and a pixel LED Of the driving circuit 204 of FIG. Drive circuit pitch is 10μ
The pitch was m, and the matrix was arranged in a matrix of 1200 rows × 1600 columns.
【００２８】駆動回路２０４の回路構成は図３に示す構
成とした。図３において、初段のゲートはＶＣＣ３１０
−ＧＮＤ３０９間にＰＭＯＳ３０５、ＮＭＯＳ３０４、
ＮＭＯＳ３０３の三つのＭＯＳトランジスタが接続され
ていて、行選択信号３０１がＮＭＯＳ３０３に入力さ
れ、画素駆動信号３０２がＰＭＯＳ３０５とＮＭＯＳ３
０４に入力される、出力はＰＭＯＳ３０５のソース端か
らとり、これを次段のインバータ回路（ＶＣＣ３１０−
ＧＮＤ３０９間に接続されたＰＭＯＳ３０７とＮＭＯＳ
３０６で構成）に入力する。このような構成にすること
により、行選択された行が、画素駆動信号３０２によ
り、出力パッド３０８の電位が制御され、この電極に接
続されるＬＥＤを駆動する。The circuit configuration of the drive circuit 204 is as shown in FIG. In FIG. 3, the first stage gate is a VCC 310
-PMOS 305, NMOS 304, between GND 309
The three MOS transistors of the NMOS 303 are connected, the row selection signal 301 is input to the NMOS 303, and the pixel drive signal 302 is output to the PMOS 305 and the NMOS 3
The output which is input to the input terminal 04 is taken from the source terminal of the PMOS 305, and is taken as the next inverter circuit (VCC310-).
PMOS 307 and NMOS connected between GND 309
306). With such a configuration, the selected row controls the potential of the output pad 308 by the pixel drive signal 302, and drives the LED connected to this electrode.
【００２９】画素の諧調はパルス駆動制御によって行
う。駆動回路の出力は、各駆動回路の上部に同じピッチ
でパッド２０５として形成した。サイズは８μｍ角とし
た。パッド２０５部以外の表面はＳｉＯ2で覆った。The gradation of a pixel is controlled by pulse drive control. The outputs of the drive circuits were formed as pads 205 at the same pitch on the top of each drive circuit. The size was 8 μm square. The surface other than the pad 205 was covered with SiO 2 .
【００３０】次に図４に示すように、ＬＥＤ層の形成を
行った。図４において、別のＳｉ基板（ｐ型）４０１を
陽極化成して、１０μｍ程度の厚さのポーラスＳｉ層４
０２を作成した。続いて、この基板を水素ガス雰囲気中
でアニールし、ポーラスＳｉ層表面に３ｎｍの厚さのＳ
ｉ単結晶層４０３を作成した。Next, as shown in FIG. 4, an LED layer was formed. In FIG. 4, another Si substrate (p-type) 401 is anodized to form a porous Si layer 4 having a thickness of about 10 μm.
02 was created. Subsequently, the substrate was annealed in a hydrogen gas atmosphere to form a 3 nm thick S on the surface of the porous Si layer.
An i single crystal layer 403 was formed.
【００３１】この基板にＲＦ−ＭＢＥ法を用いて、窒化
物半導体によるＬＥＤ層の結晶成長を行った。Ｓｉ基板
とＧａＮ等の窒化物半導体の格子定数や熱膨張係数は大
きく異なるため、通常は良質な結晶成長膜は得られにく
い。しかし、Ｓｉ基板に上記のようなポーラスＳｉ層を
導入するような構成にすると、このポーラス層で基板と
成長層の間に発生する歪応力を緩和して、良質な成長層
を得ることができる。On this substrate, crystal growth of an LED layer using a nitride semiconductor was performed using the RF-MBE method. Since the lattice constant and the coefficient of thermal expansion of the Si substrate and the nitride semiconductor such as GaN are significantly different, it is usually difficult to obtain a high-quality crystal growth film. However, when the porous Si layer is introduced into the Si substrate as described above, the strain stress generated between the substrate and the growth layer is reduced by the porous layer, and a high-quality growth layer can be obtained. .
【００３２】ここでは、ノンドープＡｌＮバッファ層４
０４、ｎ型ＧａＮ層４０５、ｎ型ＡｌＧａＮクラッド層
４０６、ノンドープＡｌＧａＩｎＮ活性層４０７、ｐ型
ＡｌＧａＮクラッド層４０８、ｐ型ＧａＮコンタクト層
４０９の順で順次積層した。ｎ型のドーパントにはＳｉ
を、ｐ型のドーパントにはＭｇを用いた。この工程で作
成されたＬＥＤの発光波長は３６０ｎｍの紫外光であっ
た。Here, the non-doped AlN buffer layer 4
04, an n-type GaN layer 405, an n-type AlGaN cladding layer 406, a non-doped AlGaInN active layer 407, a p-type AlGaN cladding layer 408, and a p-type GaN contact layer 409 were sequentially stacked. The n-type dopant is Si
And Mg was used as a p-type dopant. The emission wavelength of the LED produced in this step was 360 nm ultraviolet light.
【００３３】さらに、上記駆動回路の出力パッド２０５
と同じピッチ、同数の金属電極４１０を作成した。この
電極の大きさは７μｍ角とした。電極以外の部分はＳｉ
Ｏ2膜４１１で覆った。Further, the output pad 205 of the drive circuit
The same pitch and the same number of metal electrodes 410 were formed. The size of this electrode was 7 μm square. The parts other than the electrodes are Si
Covered with O 2 film 411.
【００３４】次に、ＬＥＤ層とＳｉ駆動回路部を接続し
てＬＥＤディスプレイパネルを作製する。Next, the LED display panel is manufactured by connecting the LED layer and the Si drive circuit section.
【００３５】先ず、図５（ａ）に示すように、ＬＥＤ基
板４００（図４参照）の陽極電極４１０の中心と、駆動
回路が作り込まれたＳｉ基板２００（図２参照）の出力
パッド２０５の中心を一致させて、これらの基板を加
熱、加圧して張り合わせた。First, as shown in FIG. 5A, the center of the anode electrode 410 of the LED substrate 400 (see FIG. 4) and the output pad 205 of the Si substrate 200 (see FIG. 2) in which the driving circuit is built. These substrates were heated and pressed together so that the centers of the substrates were aligned.
【００３６】次に、図５（ｂ）に示すように、ポーラス
Ｓｉ４０２を選択的にエッチングすることで、ＬＥＤを
成長する際に用いたＳｉ基板４０１を剥離した。Next, as shown in FIG. 5B, the porous Si 402 was selectively etched to peel off the Si substrate 401 used for growing the LED.
【００３７】さらに、ＬＥＤ層を駆動回路のパターンと
同じパターンでパターニングし、エッチングによりｐ型
ＡｌＧａＮクラッド層まで達する溝を作成した。そし
て、その溝を絶縁物で埋め込み、表面に残っているＡｌ
Ｎ層をエッチングし、ｎ型ＧａＮに透明電極で陰極のコ
ンタクトをとった。透明電極は基板一面の共通電極とし
た。この工程を行った後のパネルの構成は、図１に示す
ような構成となる。尚、図１において、１０１はＬＥＤ
を構成するｐ型半導体層、１０２はＬＥＤを構成する活
性層、１０３はＬＥＤを構成するｎ型半導体層、１０４
は絶縁膜、１０５は透明共通ＬＥＤ陰極電極である。Further, the LED layer was patterned with the same pattern as that of the driving circuit, and a groove was formed by etching to reach the p-type AlGaN cladding layer. Then, the trench is filled with an insulator, and the Al remaining on the surface is
The N layer was etched, and a negative electrode was contacted with n-type GaN with a transparent electrode. The transparent electrode was a common electrode on one surface of the substrate. The configuration of the panel after performing this step is as shown in FIG. In FIG. 1, reference numeral 101 denotes an LED.
, An active layer forming an LED, 103 an n-type semiconductor layer forming an LED, 104
Is an insulating film, and 105 is a transparent common LED cathode electrode.
【００３８】続いて、この上部に、紫外光を赤色、緑
色、青色に変換する蛍光体を順次堆積し、パターニング
した。４画素のうちの２画素を緑色に、残りの２画素を
赤色、青色を発光する蛍光体を積層した。Subsequently, phosphors for converting ultraviolet light into red, green, and blue light were sequentially deposited and patterned on the upper portion. Two of the four pixels were stacked with phosphors emitting green light, the remaining two pixels with red light and blue light.
【００３９】本実施例ではＬＥＤとして紫外光を発光す
るＬＥＤを採用し、ＬＥＤ上に紫外光を吸収して青、
緑、赤色の光を放射する蛍光体を積層したが、これに限
るものではなく、ＬＥＤとして青色を発光するＬＥＤを
採用し、ＬＥＤ上に青色光を吸収して緑、赤色の光を放
射する蛍光体を積層してもよい。In this embodiment, an LED that emits ultraviolet light is adopted as the LED, and the LED absorbs ultraviolet light and emits blue light.
A phosphor that emits green and red light is laminated, but the present invention is not limited to this. An LED that emits blue light is adopted as the LED, and the LED absorbs blue light and emits green and red light. Phosphors may be stacked.
【００４０】以上の工程により、駆動回路および周辺回
路が集積された小型、高精細のＬＥＤディスプレイパネ
ルを作成することができた。Through the above steps, a small and high-definition LED display panel in which a driving circuit and peripheral circuits are integrated can be manufactured.
【００４１】[0041]
【発明の効果】以上説明したように、本発明によれば、
Ｓｉ基板に作り込まれたＬＥＤ駆動回路及び信号処理回
路等の周辺回路をＬＥＤ画素と一体化してオンチップ化
することができ、小型、高精細で、かつ高機能なＬＥＤ
ディスプレイパネルを実現することができる。As described above, according to the present invention,
Peripheral circuits such as an LED drive circuit and a signal processing circuit built on a Si substrate can be integrated with LED pixels to be on-chip, and small, high-definition, and high-performance LEDs
A display panel can be realized.
【図１】本発明の実施例に係るＬＥＤディスプレイパネ
ルにおける断面構成を示す概略図である。FIG. 1 is a schematic diagram showing a cross-sectional configuration of an LED display panel according to an embodiment of the present invention.
【図２】本発明の実施例に係るＬＥＤディスプレイパネ
ルにおける駆動回路部分の構成を示す概略図である。FIG. 2 is a schematic diagram showing a configuration of a driving circuit portion in the LED display panel according to the embodiment of the present invention.
【図３】本発明の実施例に係るＬＥＤディスプレイパネ
ルにおける駆動回路部を示す回路図である。FIG. 3 is a circuit diagram showing a driving circuit unit in the LED display panel according to the embodiment of the present invention.
【図４】本発明の実施例におけるＬＥＤ層の成長工程を
示す概略図である。FIG. 4 is a schematic view showing a step of growing an LED layer in an example of the present invention.
【図５】本発明の実施例におけるＬＥＤ層とＳｉ駆動回
路部とを接続してＬＥＤディスプレイパネルを作成する
工程を示す概略図である。FIG. 5 is a schematic view illustrating a process of connecting an LED layer and a Si driving circuit unit to form an LED display panel according to an embodiment of the present invention.
１０１ ＬＥＤを構成するｐ型半導体層 １０２ ＬＥＤを構成する活性層 １０３ ＬＥＤを構成するｎ型半導体層 １０４ 絶縁膜 １０５ 透明共通ＬＥＤ陰極電極 ２００ ＬＥＤ駆動回路等が形成されたＳｉ基板 ２０１ Ｓｉ基板 ２０２ 行選択信号発生回路及び周辺回路部 ２０３ ＬＥＤ信号発生回路及び周辺回路部 ２０４ ＬＥＤ駆動回路部 ２０５ ＬＥＤ駆動回路の出力パッド ３０１ 行選択信号 ３０２ 画素駆動信号 ３０３、３０４、３０６ ＮＭＯＳ ３０５、３０７ ＰＭＯＳ ３０８ ＬＥＤ駆動回路の出力パッド ３０９ ＧＮＤ ３１０ ＶＣＣ ４００ ＬＥＤ層が形成されたＳｉ基板 ４０１ ＬＥＤ層成長用Ｓｉ基板 ４０２ ポーラスＳｉ層 ４０３ 単結晶Ｓｉ層 ４０４ ＡｌＮバッファー層 ４０５ ｎ型ＧａＮ層 ４０６ ｎ型ＡｌＧａＮ層 ４０７ ＡｌＧａＩｎＮ活性層 ４０８ ｐ型ＡｌＧａＮ層 ４０９ ｐ型ＧａＮ層 ４１０ ＬＥＤ陽極電極 ４１１ ＳｉＯ2層 ５０１ ＳｉＯ2層 ５０２ ＬＥＤ駆動回路出力パッドとＬＥＤ陽極電極が
接続された金属層Reference Signs List 101 p-type semiconductor layer forming LED 102 active layer forming LED 103 n-type semiconductor layer forming LED 104 insulating film 105 transparent common LED cathode electrode 200 Si substrate on which LED drive circuit and the like are formed 201 Si substrate 202 row Selection signal generation circuit and peripheral circuit section 203 LED signal generation circuit and peripheral circuit section 204 LED drive circuit section 205 Output pad of LED drive circuit 301 Row selection signal 302 Pixel drive signal 303, 304, 306 NMOS 305, 307 PMOS 308 LED drive Circuit output pad 309 GND 310 VCC 400 Si substrate on which LED layer is formed 401 Si substrate for LED layer growth 402 Porous Si layer 403 Single crystal Si layer 404 AlN buffer layer 405 n-type GaN layer 406 n-type AlGaN layer 40 AlGaInN active layer 408 p-type AlGaN layer 409 p-type GaN layer 410 metal layer LED anode 411 SiO 2 layer 501 SiO 2 layer 502 LED driver circuit output pads and the LED anode is connected
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 33/00 Ｆターム(参考） 5C094 AA05 AA15 BA23 HA08 5F041 AA12 BB03 BB26 BB33 CA04 CA33 CA34 CA40 CA88 CB22 DA12 DC07 DC26 EE25 FF06──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification FI theme coat ゛ (reference) H01L 33/00 F term (reference) 5C094 AA05 AA15 BA23 HA08 5F041 AA12 BB03 BB26 BB33 CA04 CA33 CA34 CA40 CA88 CB22 DA12 DC07 DC26 EE25 FF06
Claims (9)
た発光ダイオード駆動回路が形成され、そのそれぞれの
駆動回路上に発光ダイオードが積層されていることを特
徴とする発光ダイオードディスプレイパネル。1. A light emitting diode display panel comprising: a plurality of light emitting diode driving circuits arranged in a two-dimensional array on a silicon substrate; and light emitting diodes stacked on the respective driving circuits.
信号線、二つの電源線、及び、複数のＭＯＳトランジス
タまたはバイポーラトランジスタからなる発光ダイオー
ド駆動回路が２次元アレイ配列されて形成され、そのそ
れぞれの駆動回路の上部に、該駆動回路の出力端と一方
の電極が電気的に接続された発光ダイオードが積層され
ていることを特徴とする発光ダイオードディスプレイパ
ネル。2. A two-dimensional array of row selection lines, pixel drive signal lines, two power supply lines, and light emitting diode drive circuits comprising a plurality of MOS transistors or bipolar transistors is formed on a silicon substrate. A light-emitting diode display panel, wherein a light-emitting diode in which an output terminal of the drive circuit and one electrode are electrically connected is stacked on each drive circuit.
画素駆動信号線を入力とするナンドゲートと、そのナン
ドゲートの出力を入力とするインバータとで構成されて
いることを特徴とする請求項２に記載の発光ダイオード
ディスプレイパネル。3. The light emitting diode drive circuit according to claim 2, wherein the NAND gate receives a row selection line and a pixel drive signal line as inputs and an inverter receives an output of the NAND gate as an input. A light emitting diode display panel as described.
ダイオードであり、発光ダイオード上に紫外光を吸収し
て青、緑、赤色の光を放射する蛍光体が積層されている
ことを特徴とする請求項１乃至３のいずれかに記載の発
光ダイオードディスプレイパネル。4. The light-emitting diode is a light-emitting diode that emits ultraviolet light, and a phosphor that absorbs ultraviolet light and emits blue, green, and red light is stacked on the light-emitting diode. A light emitting diode display panel according to claim 1.
イオードであり、発光ダイオード上に青色光を吸収して
緑、赤色の光を放射する蛍光体が積層されていることを
特徴とする請求項１乃至３のいずれかに記載の発光ダイ
オードディスプレイパネル。5. The light-emitting diode is a light-emitting diode that emits blue light, and a phosphor that absorbs blue light and emits green and red light is stacked on the light-emitting diode. 4. The light-emitting diode display panel according to any one of items 1 to 3.
ｎＮ、及びこれらの混晶の窒化物半導体のいずれかで構
成されていることを特徴とする請求項４または５に記載
の発光ダイオードディスプレイパネル。6. A light-emitting diode comprising AlN, GaN, I
The light emitting diode display panel according to claim 4, wherein the light emitting diode display panel is made of any one of nN and a mixed crystal nitride semiconductor.
半導体で構成されていることを特徴とする請求項４また
は５に記載の発光ダイオードディスプレイパネル。7. The light emitting diode display panel according to claim 4, wherein the light emitting diode is made of a II-VI group compound semiconductor.
ン層を介して発光ダイオードを構成する層を成長させ、
その上に陽極電極を形成し、 他方のシリコン基板上に発光ダイオードの駆動回路を形
成して、 一方のシリコン基板上に形成された発光ダイオードの陽
極電極の中心と、他方のシリコン基板上に形成された駆
動回路の出力パッドの中心とが一致するように対向さ
せ、加熱、加圧して張り合わせた後、 上記ポーラスシリコン層を選択的に除去して、発光ダイ
オードを構成する層の成長に用いたシリコン基板を剥離
除去することを特徴とする発光ダイオードディスプレイ
パネルの製造方法。8. A layer constituting a light emitting diode is grown on one silicon substrate via a porous silicon layer,
An anode electrode is formed thereon, and a driving circuit for the light emitting diode is formed on the other silicon substrate. The center of the anode electrode of the light emitting diode formed on one silicon substrate and the other electrode are formed on the other silicon substrate. The porous silicon layer was selectively removed by heating and pressurizing, and then used to grow a layer constituting a light emitting diode. A method for manufacturing a light emitting diode display panel, comprising removing and removing a silicon substrate.
素駆動信号線、二つの電源線、及び、複数のＭＯＳトラ
ンジスタまたはバイポーラトランジスタからなる発光ダ
イオード駆動回路が２次元アレイ配列されて形成される
ことを特徴とする請求項８に記載の発光ダイオードディ
スプレイパネルの製造方法。9. A two-dimensional array of row selection lines, pixel drive signal lines, two power supply lines, and light emitting diode drive circuits comprising a plurality of MOS transistors or bipolar transistors are formed on the other silicon substrate. The method according to claim 8, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000331727A JP2002141492A (en) | 2000-10-31 | 2000-10-31 | Light-emitting diode display panel and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000331727A JP2002141492A (en) | 2000-10-31 | 2000-10-31 | Light-emitting diode display panel and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002141492A true JP2002141492A (en) | 2002-05-17 |
Family
ID=18808028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000331727A Withdrawn JP2002141492A (en) | 2000-10-31 | 2000-10-31 | Light-emitting diode display panel and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002141492A (en) |
Cited By (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150703A (en) * | 2003-10-22 | 2005-06-09 | Oki Data Corp | Semiconductor device, led print head using the same, image forming apparatus, and method of manufacturing semiconductor device |
| WO2005091384A1 (en) * | 2004-03-19 | 2005-09-29 | Sumitomo Chemical Company, Limited | Compound semiconductor light-emitting device |
| US7486307B2 (en) | 2002-12-24 | 2009-02-03 | Oki Data Corporation | Semiconductor apparatus having conductive layers and semiconductor thin films |
| JP2009260384A (en) * | 2009-08-03 | 2009-11-05 | Oki Data Corp | Semiconductor device |
| WO2012090489A1 (en) * | 2010-12-27 | 2012-07-05 | パナソニック株式会社 | Light-emitting diode drive circuit and led light source |
| JP2012212140A (en) * | 2006-04-14 | 2012-11-01 | Semiconductor Energy Lab Co Ltd | Display device, electronic appliance, and television device |
| CN103165028A (en) * | 2011-12-09 | 2013-06-19 | 上海本星电子科技有限公司 | Embedded light emitting diode (LED) display screen and manufacture process thereof |
| US8664668B2 (en) | 2002-12-24 | 2014-03-04 | Oki Data Corporation | Combined semiconductor apparatus with semiconductor thin film |
| JP2015501085A (en) * | 2011-12-22 | 2015-01-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Display device and manufacturing method of display device |
| CN105051901A (en) * | 2013-03-15 | 2015-11-11 | 欧司朗光电半导体有限公司 | Display device |
| CN105280106A (en) * | 2015-11-17 | 2016-01-27 | 东莞嘉鑫创光电有限公司 | LED display panel |
| WO2018071696A1 (en) * | 2016-10-12 | 2018-04-19 | Pan Shaoher X | Integrated light-emitting diodes array for displays |
| WO2018074611A1 (en) | 2016-10-19 | 2018-04-26 | 株式会社オルガノサーキット | Active matrix led display |
| CN108877663A (en) * | 2017-05-10 | 2018-11-23 | 矽照光电（厦门）有限公司 | Display screen and its manufacturing method and display structure |
| JP2018538554A (en) * | 2015-11-26 | 2018-12-27 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Illumination face plate and method of manufacturing such an illumination face plate |
| TWI646377B (en) * | 2017-11-03 | 2019-01-01 | 友達光電股份有限公司 | Display device and method of manufacturing same |
| WO2019026692A1 (en) * | 2017-07-31 | 2019-02-07 | セイコーエプソン株式会社 | Light emitting device and projector |
| US10325894B1 (en) | 2018-04-17 | 2019-06-18 | Shaoher Pan | Integrated multi-color light-emitting pixel arrays based devices by bonding |
| KR20190097130A (en) * | 2017-01-09 | 2019-08-20 | 글로 에이비 | Light Emitting Diodes with Integrated Reflectors for Direct View Displays and Manufacturing Methods Thereof |
| WO2019190089A1 (en) * | 2018-03-27 | 2019-10-03 | ㈜라이타이저 | Display device and method for manufacturing same |
| US10437402B1 (en) | 2018-03-27 | 2019-10-08 | Shaoher Pan | Integrated light-emitting pixel arrays based devices by bonding |
| KR20190115838A (en) * | 2018-04-04 | 2019-10-14 | (주)라이타이저 | Display appartus using one chip type led and fabrication method of the same |
| KR20190115828A (en) * | 2018-04-04 | 2019-10-14 | (주)라이타이저 | Display apparatus and method for manufacturing thereof |
| US10445048B2 (en) | 2016-12-30 | 2019-10-15 | Shaoher Pan | Larger displays formed by multiple integrated LED array micro-displays |
| JP2019529989A (en) * | 2016-09-12 | 2019-10-17 | ソウル セミコンダクター カンパニー リミテッドＳｅｏｕｌ Ｓｅｍｉｃｏｎｄｕｔｏｒ Ｃｏ．， Ｌｔｄ． | Display device |
| KR20190117968A (en) * | 2018-04-09 | 2019-10-17 | (주)라이타이저 | Display apparatus and method for manufacturing thereof |
| CN110556395A (en) * | 2018-05-31 | 2019-12-10 | 夏普株式会社 | Micro light emitting device, image display device and method of manufacturing the same |
| JP2020074005A (en) * | 2015-12-01 | 2020-05-14 | シャープ株式会社 | Image forming element and manufacturing method |
| US10748879B2 (en) | 2018-02-28 | 2020-08-18 | Sharp Kabushiki Kaisha | Image display device and display |
| US10763303B2 (en) | 2018-05-21 | 2020-09-01 | Sharp Kabushiki Kaisha | Micro light emission element and image display device |
| JP2020527756A (en) * | 2017-07-21 | 2020-09-10 | アルディア | Optical electronic device |
| JP2020181980A (en) * | 2019-04-23 | 2020-11-05 | シャープ株式会社 | Image display element |
| US10847083B1 (en) | 2019-10-14 | 2020-11-24 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices by laser-assisted bonding |
| JP2020191460A (en) * | 2016-12-22 | 2020-11-26 | シャープ株式会社 | Display device and manufacturing method |
| WO2021006112A1 (en) | 2019-07-10 | 2021-01-14 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| WO2021065917A1 (en) | 2019-10-01 | 2021-04-08 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| WO2021065918A1 (en) | 2019-10-01 | 2021-04-08 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| US11011669B2 (en) | 2019-10-14 | 2021-05-18 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices |
| US11011555B2 (en) | 2016-10-12 | 2021-05-18 | Shaoher Pan | Fabricating integrated light-emitting pixel arrays for displays |
| WO2021095603A1 (en) * | 2019-11-11 | 2021-05-20 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| US11133434B2 (en) | 2018-03-02 | 2021-09-28 | Sharp Kabushiki Kaisha | Image display device |
| KR20210143729A (en) | 2019-03-22 | 2021-11-29 | 니치아 카가쿠 고교 가부시키가이샤 | Method for manufacturing an image display device and an image display device |
| WO2021256190A1 (en) | 2020-06-18 | 2021-12-23 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| WO2022004308A1 (en) | 2020-06-29 | 2022-01-06 | 日亜化学工業株式会社 | Production method for image display device and image display device |
| KR20220006052A (en) | 2019-05-08 | 2022-01-14 | 니치아 카가쿠 고교 가부시키가이샤 | Method for manufacturing an image display device and an image display device |
| KR20220007044A (en) | 2019-05-10 | 2022-01-18 | 니치아 카가쿠 고교 가부시키가이샤 | Method for manufacturing an image display device and an image display device |
| US11239395B2 (en) | 2019-03-08 | 2022-02-01 | Sharp Kabushiki Kaisha | Image display device |
| WO2022059528A1 (en) * | 2020-09-17 | 2022-03-24 | 日亜化学工業株式会社 | Production method for image display device and image display device |
| US11289634B2 (en) | 2018-11-30 | 2022-03-29 | Sharp Kabushiki Kaisha | Image display element |
| US11398464B2 (en) | 2019-07-17 | 2022-07-26 | Sharp Fukuyama Laser Co., Ltd. | Micro light emitting element and image display device |
| US11424225B2 (en) | 2019-07-04 | 2022-08-23 | Sharp Fukuyama Laser Co., Ltd. | Image display device |
| US11456288B2 (en) | 2019-08-07 | 2022-09-27 | Sharp Fukuyama Laser Co., Ltd. | Image display element |
| US11728370B2 (en) | 2020-03-10 | 2023-08-15 | Sharp Fukuyama Laser Co., Ltd. | Image display device |
| US11908847B2 (en) | 2019-11-18 | 2024-02-20 | Sharp Fukuyama Laser Co., Ltd. | Image display element and method for manufacturing image display element |
-
2000
- 2000-10-31 JP JP2000331727A patent/JP2002141492A/en not_active Withdrawn
Cited By (102)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8664668B2 (en) | 2002-12-24 | 2014-03-04 | Oki Data Corporation | Combined semiconductor apparatus with semiconductor thin film |
| US7486307B2 (en) | 2002-12-24 | 2009-02-03 | Oki Data Corporation | Semiconductor apparatus having conductive layers and semiconductor thin films |
| JP2005150703A (en) * | 2003-10-22 | 2005-06-09 | Oki Data Corp | Semiconductor device, led print head using the same, image forming apparatus, and method of manufacturing semiconductor device |
| JP4672329B2 (en) * | 2003-10-22 | 2011-04-20 | 株式会社沖データ | Semiconductor device, LED print head using the same, image forming apparatus, and method for manufacturing semiconductor device |
| WO2005091384A1 (en) * | 2004-03-19 | 2005-09-29 | Sumitomo Chemical Company, Limited | Compound semiconductor light-emitting device |
| JP2012212140A (en) * | 2006-04-14 | 2012-11-01 | Semiconductor Energy Lab Co Ltd | Display device, electronic appliance, and television device |
| US9189997B2 (en) | 2006-04-14 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2009260384A (en) * | 2009-08-03 | 2009-11-05 | Oki Data Corp | Semiconductor device |
| US9204516B2 (en) | 2010-12-27 | 2015-12-01 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting diode driver circuit and LED light source |
| CN103270609A (en) * | 2010-12-27 | 2013-08-28 | 松下电器产业株式会社 | Light-emitting diode drive circuit and led light source |
| WO2012090489A1 (en) * | 2010-12-27 | 2012-07-05 | パナソニック株式会社 | Light-emitting diode drive circuit and led light source |
| JPWO2012090489A1 (en) * | 2010-12-27 | 2014-06-05 | パナソニック株式会社 | Light emitting diode drive circuit and LED light source |
| CN103165028A (en) * | 2011-12-09 | 2013-06-19 | 上海本星电子科技有限公司 | Embedded light emitting diode (LED) display screen and manufacture process thereof |
| CN107507525A (en) * | 2011-12-09 | 2017-12-22 | 上海本星电子科技有限公司 | The manufacture craft of the display panel of embedded LED light-emitting component |
| US9362335B2 (en) | 2011-12-22 | 2016-06-07 | Osram Opto Semiconductors Gmbh | Display device and method for producing a display device |
| US10461120B2 (en) | 2011-12-22 | 2019-10-29 | Osram Opto Semiconductors Gmbh | Display device and method for producing a display device |
| JP2017098568A (en) * | 2011-12-22 | 2017-06-01 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Display device and manufacturing method of display device |
| US9748309B2 (en) | 2011-12-22 | 2017-08-29 | Osram Opto Semiconductors Gmbh | Display device and method for producing a display device |
| JP2015501085A (en) * | 2011-12-22 | 2015-01-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Display device and manufacturing method of display device |
| KR20150130293A (en) * | 2013-03-15 | 2015-11-23 | 오스람 옵토 세미컨덕터스 게엠베하 | Display device |
| JP2016513876A (en) * | 2013-03-15 | 2016-05-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Display device |
| CN105051901A (en) * | 2013-03-15 | 2015-11-11 | 欧司朗光电半导体有限公司 | Display device |
| US9917077B2 (en) | 2013-03-15 | 2018-03-13 | Osram Opto Semiconductors Gmbh | Display device |
| KR102175404B1 (en) | 2013-03-15 | 2020-11-06 | 오스람 옵토 세미컨덕터스 게엠베하 | Display device |
| CN105280106A (en) * | 2015-11-17 | 2016-01-27 | 东莞嘉鑫创光电有限公司 | LED display panel |
| JP2018538554A (en) * | 2015-11-26 | 2018-12-27 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Illumination face plate and method of manufacturing such an illumination face plate |
| JP7003032B2 (en) | 2015-11-26 | 2022-01-20 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Lighting faceplates and methods for manufacturing such lighting faceplates |
| JP2021101243A (en) * | 2015-12-01 | 2021-07-08 | シャープ株式会社 | Image forming device and manufacturing method |
| JP2020074005A (en) * | 2015-12-01 | 2020-05-14 | シャープ株式会社 | Image forming element and manufacturing method |
| US11114423B2 (en) | 2015-12-01 | 2021-09-07 | Sharp Kabushiki Kaisha | Image-forming element |
| JP7104822B2 (en) | 2015-12-01 | 2022-07-21 | シャープ株式会社 | Image forming element and manufacturing method |
| US10775667B2 (en) | 2016-09-12 | 2020-09-15 | Seoul Semiconductor Co., Ltd. | Display apparatus |
| US11796857B2 (en) | 2016-09-12 | 2023-10-24 | Seoul Semiconductor Co., Ltd. | Display apparatus |
| JP2019529989A (en) * | 2016-09-12 | 2019-10-17 | ソウル セミコンダクター カンパニー リミテッドＳｅｏｕｌ Ｓｅｍｉｃｏｎｄｕｔｏｒ Ｃｏ．， Ｌｔｄ． | Display device |
| US10467952B2 (en) | 2016-10-12 | 2019-11-05 | Shaoher Pan | Integrated light-emitting diode arrays for displays |
| WO2018071696A1 (en) * | 2016-10-12 | 2018-04-19 | Pan Shaoher X | Integrated light-emitting diodes array for displays |
| US11011555B2 (en) | 2016-10-12 | 2021-05-18 | Shaoher Pan | Fabricating integrated light-emitting pixel arrays for displays |
| US10726768B2 (en) | 2016-10-12 | 2020-07-28 | Shaoher Pan | Integrated light-emitting diode arrays for displays |
| KR20200124781A (en) | 2016-10-19 | 2020-11-03 | 가부시키가이샤 오르가노 서킷 | Active matrix led display |
| WO2018074611A1 (en) | 2016-10-19 | 2018-04-26 | 株式会社オルガノサーキット | Active matrix led display |
| KR20190067180A (en) | 2016-10-19 | 2019-06-14 | 가부시키가이샤 오르가노 서킷 | Active matrix LED display |
| JP2020191460A (en) * | 2016-12-22 | 2020-11-26 | シャープ株式会社 | Display device and manufacturing method |
| US10902770B2 (en) | 2016-12-22 | 2021-01-26 | Sharp Kabushiki Kaisha | Display device |
| JP7033172B2 (en) | 2016-12-22 | 2022-03-09 | シャープ株式会社 | Display device and manufacturing method |
| US10445048B2 (en) | 2016-12-30 | 2019-10-15 | Shaoher Pan | Larger displays formed by multiple integrated LED array micro-displays |
| KR20190097130A (en) * | 2017-01-09 | 2019-08-20 | 글로 에이비 | Light Emitting Diodes with Integrated Reflectors for Direct View Displays and Manufacturing Methods Thereof |
| KR20210118955A (en) * | 2017-01-09 | 2021-10-01 | 글로 에이비 | Light emitting diodes with integrated reflector for a direct view display and method of making thereof |
| JP2020506535A (en) * | 2017-01-09 | 2020-02-27 | グロ アーベーＧｌｏ Ａｂ | Light emitting diode with integrated reflector for direct view display and method of manufacturing the same |
| KR102305344B1 (en) * | 2017-01-09 | 2021-09-27 | 글로 에이비 | Light emitting diode with integrated reflector for direct view display and method for manufacturing same |
| KR102468071B1 (en) * | 2017-01-09 | 2022-11-17 | 글로 에이비 | Light emitting diodes with integrated reflector for a direct view display and method of making thereof |
| CN108877663A (en) * | 2017-05-10 | 2018-11-23 | 矽照光电（厦门）有限公司 | Display screen and its manufacturing method and display structure |
| JP7146893B2 (en) | 2017-07-21 | 2022-10-04 | アルディア | optoelectronic device |
| JP2020527756A (en) * | 2017-07-21 | 2020-09-10 | アルディア | Optical electronic device |
| JP2019029513A (en) * | 2017-07-31 | 2019-02-21 | セイコーエプソン株式会社 | Light-emitting device and projector |
| WO2019026692A1 (en) * | 2017-07-31 | 2019-02-07 | セイコーエプソン株式会社 | Light emitting device and projector |
| JP6999877B2 (en) | 2017-07-31 | 2022-01-19 | セイコーエプソン株式会社 | Luminous device and projector |
| TWI646377B (en) * | 2017-11-03 | 2019-01-01 | 友達光電股份有限公司 | Display device and method of manufacturing same |
| CN109285855A (en) * | 2017-11-03 | 2019-01-29 | 友达光电股份有限公司 | Display device and method for manufacturing the same |
| CN109285855B (en) * | 2017-11-03 | 2020-12-11 | 友达光电股份有限公司 | Display device and method for manufacturing the same |
| US10748879B2 (en) | 2018-02-28 | 2020-08-18 | Sharp Kabushiki Kaisha | Image display device and display |
| US11264365B2 (en) | 2018-02-28 | 2022-03-01 | Sharp Kabushiki Kaisha | Image display device and display |
| US11133434B2 (en) | 2018-03-02 | 2021-09-28 | Sharp Kabushiki Kaisha | Image display device |
| WO2019190089A1 (en) * | 2018-03-27 | 2019-10-03 | ㈜라이타이저 | Display device and method for manufacturing same |
| US10437402B1 (en) | 2018-03-27 | 2019-10-08 | Shaoher Pan | Integrated light-emitting pixel arrays based devices by bonding |
| US10884560B2 (en) | 2018-03-27 | 2021-01-05 | Shaoher Pan | Integrated light-emitting pixel arrays based devices by bonding |
| KR20190115838A (en) * | 2018-04-04 | 2019-10-14 | (주)라이타이저 | Display appartus using one chip type led and fabrication method of the same |
| KR20190115828A (en) * | 2018-04-04 | 2019-10-14 | (주)라이타이저 | Display apparatus and method for manufacturing thereof |
| KR102113104B1 (en) * | 2018-04-04 | 2020-05-20 | (주)라이타이저 | Display apparatus and method for manufacturing thereof |
| KR102078643B1 (en) | 2018-04-04 | 2020-04-07 | (주)라이타이저 | Display appartus using one chip type led and fabrication method of the same |
| KR20190117968A (en) * | 2018-04-09 | 2019-10-17 | (주)라이타이저 | Display apparatus and method for manufacturing thereof |
| KR102073572B1 (en) | 2018-04-09 | 2020-02-06 | (주)라이타이저 | Display apparatus and method for manufacturing thereof |
| US10636838B2 (en) | 2018-04-17 | 2020-04-28 | Shaoher Pan | Integrated multi-color light-emitting pixel arrays based devices by bonding |
| US10325894B1 (en) | 2018-04-17 | 2019-06-18 | Shaoher Pan | Integrated multi-color light-emitting pixel arrays based devices by bonding |
| US10763303B2 (en) | 2018-05-21 | 2020-09-01 | Sharp Kabushiki Kaisha | Micro light emission element and image display device |
| US11296144B2 (en) | 2018-05-21 | 2022-04-05 | Sharp Kabushiki Kaisha | Image display device |
| CN110556395A (en) * | 2018-05-31 | 2019-12-10 | 夏普株式会社 | Micro light emitting device, image display device and method of manufacturing the same |
| CN110556395B (en) * | 2018-05-31 | 2023-09-19 | 夏普株式会社 | Micro light emitting device, image display device and method of manufacturing the same |
| US10763249B2 (en) | 2018-05-31 | 2020-09-01 | Sharp Kabushiki Kaisha | Image display device |
| US11289634B2 (en) | 2018-11-30 | 2022-03-29 | Sharp Kabushiki Kaisha | Image display element |
| US11239395B2 (en) | 2019-03-08 | 2022-02-01 | Sharp Kabushiki Kaisha | Image display device |
| US11476308B2 (en) | 2019-03-22 | 2022-10-18 | Nichia Corporation | Method for manufacturing image display device and image display device |
| KR20210143729A (en) | 2019-03-22 | 2021-11-29 | 니치아 카가쿠 고교 가부시키가이샤 | Method for manufacturing an image display device and an image display device |
| JP7075437B2 (en) | 2019-04-23 | 2022-05-25 | シャープ株式会社 | Image display element |
| JP2020181980A (en) * | 2019-04-23 | 2020-11-05 | シャープ株式会社 | Image display element |
| US11705536B2 (en) | 2019-04-23 | 2023-07-18 | Sharp Kabushiki Kaisha | Image display element with improved light emission efficiency |
| KR20220006052A (en) | 2019-05-08 | 2022-01-14 | 니치아 카가쿠 고교 가부시키가이샤 | Method for manufacturing an image display device and an image display device |
| KR20220007044A (en) | 2019-05-10 | 2022-01-18 | 니치아 카가쿠 고교 가부시키가이샤 | Method for manufacturing an image display device and an image display device |
| US11424225B2 (en) | 2019-07-04 | 2022-08-23 | Sharp Fukuyama Laser Co., Ltd. | Image display device |
| WO2021006112A1 (en) | 2019-07-10 | 2021-01-14 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| US11398464B2 (en) | 2019-07-17 | 2022-07-26 | Sharp Fukuyama Laser Co., Ltd. | Micro light emitting element and image display device |
| US11456288B2 (en) | 2019-08-07 | 2022-09-27 | Sharp Fukuyama Laser Co., Ltd. | Image display element |
| WO2021065918A1 (en) | 2019-10-01 | 2021-04-08 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| WO2021065917A1 (en) | 2019-10-01 | 2021-04-08 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| US10847083B1 (en) | 2019-10-14 | 2020-11-24 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices by laser-assisted bonding |
| US11011669B2 (en) | 2019-10-14 | 2021-05-18 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices |
| US11620936B2 (en) | 2019-10-14 | 2023-04-04 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices by laser-assisted bonding |
| WO2021095603A1 (en) * | 2019-11-11 | 2021-05-20 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| US11908847B2 (en) | 2019-11-18 | 2024-02-20 | Sharp Fukuyama Laser Co., Ltd. | Image display element and method for manufacturing image display element |
| US11728370B2 (en) | 2020-03-10 | 2023-08-15 | Sharp Fukuyama Laser Co., Ltd. | Image display device |
| WO2021256190A1 (en) | 2020-06-18 | 2021-12-23 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| WO2022004308A1 (en) | 2020-06-29 | 2022-01-06 | 日亜化学工業株式会社 | Production method for image display device and image display device |
| WO2022059528A1 (en) * | 2020-09-17 | 2022-03-24 | 日亜化学工業株式会社 | Production method for image display device and image display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2002141492A (en) | Light-emitting diode display panel and manufacturing method thereof | |
| Templier | GaN‐based emissive microdisplays: a very promising technology for compact, ultra‐high brightness display systems | |
| JP7473702B2 (en) | Color LED display on silicon | |
| US10784241B2 (en) | Method of manufacturing micro-LED array display devices with CMOS cells | |
| Lee et al. | Micro‐LED technologies and applications | |
| TWI774713B (en) | Method for fabricating integrated micro led display | |
| JP6343082B1 (en) | Micro LED display device and manufacturing method thereof | |
| US9041025B2 (en) | Monolithic full-color LED micro-display on an Active Matrix panel manufactured using flip-chip technology | |
| US10833220B2 (en) | Micro light emitting diode device | |
| Liu et al. | 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (LEDoS) micro-displays | |
| EP1457953B1 (en) | Image display apparatus and manufacturing method thereof | |
| US10403613B2 (en) | Micro LED display module having light transmissive substrate | |
| WO2002007132A1 (en) | Image display unit and production method for image display unit | |
| US10403614B2 (en) | Micro LED display module | |
| JP2008159767A (en) | Light emitting display unit | |
| EP4064261A1 (en) | Display device | |
| US11031380B2 (en) | Manufacturing method of micro LED display module | |
| JP2022060047A (en) | Display panel and method for manufacturing display panel | |
| CN113782553A (en) | Mass transfer Micro LED module, display screen and manufacturing method | |
| US11605668B2 (en) | Pixel architectures for low power micro light-emitting diode displays | |
| Meitl et al. | 50‐1: Invited Paper: Designs and Manufacturing Processes for microLED Displays in Handsets, Smartwatches, and Personal Computers. | |
| CN110993761A (en) | Active matrix colour display device | |
| US11031523B2 (en) | Manufacturing method of micro LED display module | |
| KR20240018582A (en) | Display pixels with integrated pipeline | |
| CN117038695A (en) | Tunneling junction RGB miniature light-emitting diode and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20080108 |