WO2020253489A1 - 显示基板、显示装置以及制作显示基板的方法 - Google Patents

显示基板、显示装置以及制作显示基板的方法 Download PDF

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WO2020253489A1
WO2020253489A1 PCT/CN2020/092699 CN2020092699W WO2020253489A1 WO 2020253489 A1 WO2020253489 A1 WO 2020253489A1 CN 2020092699 W CN2020092699 W CN 2020092699W WO 2020253489 A1 WO2020253489 A1 WO 2020253489A1
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Prior art keywords
electrode
layer
auxiliary electrode
display substrate
planarization layer
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PCT/CN2020/092699
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English (en)
French (fr)
Inventor
王国英
宋振
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京东方科技集团股份有限公司
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Priority to US17/273,772 priority Critical patent/US20210320277A1/en
Publication of WO2020253489A1 publication Critical patent/WO2020253489A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to a display substrate, a display device, and a method of manufacturing the display substrate.
  • OLED Organic Light Emitting Diode
  • auxiliary electrodes can be provided to improve the brightness uniformity of the pixels.
  • a display substrate including a planarization layer; a pixel definition layer on the planarization layer, wherein the pixel definition layer includes an opening and a retaining wall surrounding the opening; A first electrode on the planarization layer and within the opening; a light-emitting part located in the opening and electrically connected to the first electrode; an auxiliary located on the barrier wall of the pixel definition layer An electrode; an insulating part located between the first electrode and the auxiliary electrode; and a second electrode covering the auxiliary electrode and the light-emitting part.
  • the insulating part partially covers at least one of the first electrode and the auxiliary electrode.
  • the insulating portion covers at least one of: an edge portion of the auxiliary electrode facing away from the surface of the planarization layer; and a portion of the first electrode facing away from the surface of the planarization layer The edge part.
  • the insulating portion partially covers the auxiliary electrode, and the maximum thickness of the insulating portion covering the auxiliary electrode in a direction perpendicular to the planarization layer is between to between.
  • the light-emitting part includes a functional layer formed of a precursor material
  • the retaining wall includes a single-layer structure
  • the insulating part is more hydrophobic for the precursor material than the single-layer structure For the hydrophobicity of the precursor material.
  • the light emitting part includes a functional layer formed of a precursor material
  • the retaining wall includes a stack of multiple layer structures
  • the insulating part is more hydrophobic to the precursor material than all. The hydrophobicity of the precursor material of the layer structure with the weakest hydrophobicity for the precursor material among the plurality of layer structures.
  • the insulating part covers the side wall of the retaining wall.
  • the sidewall forms an acute angle with the upper surface of the planarization layer.
  • the material of the insulating part includes a water and oxygen barrier material.
  • a display device including the display substrate according to any embodiment of the present disclosure.
  • a method of manufacturing a display substrate including: forming a planarization layer; forming a pixel definition layer on the planarization layer, wherein the pixel definition layer includes an opening and surrounding the opening At the same time an auxiliary electrode is formed on the wall of the pixel definition layer and a first electrode is formed on the portion of the planarization layer corresponding to the opening; the auxiliary electrode and the first electrode An insulating part is formed therebetween, wherein the insulating part electrically insulates the auxiliary electrode from the first electrode; forming a light emitting part on the first electrode; and forming a second electrode on the auxiliary electrode and the light emitting part Two electrodes.
  • simultaneously forming an auxiliary electrode on the barrier wall of the pixel definition layer and forming a first electrode on a portion of the planarization layer corresponding to the opening includes: simultaneously forming a second electrode in one patterning process.
  • An electrode stack and an auxiliary electrode stack wherein the auxiliary electrode stack includes the auxiliary electrode and a photoresist on the side of the auxiliary electrode away from the planarization layer; and the first electrode stack includes The first electrode and the photoresist on the side of the first electrode away from the planarization layer, and forming an insulating portion between the auxiliary electrode and the first electrode includes: opposing the auxiliary electrode
  • the photoresist on the side of the electrode away from the planarization layer and the photoresist on the side of the first electrode away from the planarization layer are partially ashed to expose the edge area of the auxiliary electrode and the second electrode.
  • the edge area of an electrode depositing an insulating material layer; and stripping the unashed photoresist on the auxiliary electrode and the unashed photoresist on the first electrode, so that the stripped unashed photoresist
  • the insulating material on the upper surface is removed, and the non-removed insulating material forms the insulating portion.
  • simultaneously forming the first electrode stack and the auxiliary electrode stack in one patterning process includes: on the barrier wall of the pixel definition layer and the portion of the planarization layer corresponding to the opening Depositing an electrode material layer; coating a photoresist layer on the electrode material layer; exposing and developing the photoresist layer on the electrode material layer to expose a part of the electrode material layer; etching The exposed portion of the electrode material layer is used to obtain the first electrode stack and the auxiliary electrode stack.
  • Fig. 1 schematically shows a cross-sectional view of a display substrate according to an embodiment of the present disclosure
  • FIG. 2 schematically shows a cross-sectional view of a display substrate according to another embodiment of the present disclosure
  • Fig. 3 schematically shows a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure
  • FIGS. 4A-4C schematically show cross-sectional views of the intermediate structure of the display substrate in the process of the method for manufacturing the display substrate according to an embodiment of the present disclosure
  • 5A-5B schematically show a cross-sectional view of an intermediate structure of a display substrate in the process of a method for manufacturing a display substrate according to another embodiment of the present disclosure
  • Fig. 6 schematically shows a flowchart of a method for manufacturing a display substrate according to another embodiment of the present disclosure
  • FIG. 7 schematically shows a flowchart of a method for manufacturing a display substrate according to another embodiment of the present disclosure.
  • FIGS. 8A-8C schematically show a cross-sectional view of an intermediate structure of a display substrate in a process of a method for manufacturing a display substrate according to another embodiment of the present disclosure.
  • OLED is widely used in various display devices due to its many advantages such as high luminous efficiency, low energy consumption, high contrast, and high response speed.
  • OLED display panels usually have two light-emitting modes, top-emission and bottom-emission, namely, the bottom-emission mode where the light-emitting direction faces the base substrate, and the top-emission mode where the light-emitting direction is away from the base substrate.
  • the bottom emission mode the light emitted by the light-emitting part is blocked by devices such as thin film transistors on the substrate. So compared with bottom emission mode, top emission mode can achieve higher resolution and larger aperture ratio, so it is more popular.
  • Each OLED pixel in the top emission mode OLED display panel may include a common electrode, such as a common cathode. Since the common electrode spans multiple pixels, a voltage drop may occur thereon, that is, the potentials of the common electrode are not uniform. This may affect the brightness uniformity of each pixel.
  • an auxiliary electrode may be provided in the display substrate. The auxiliary electrode provides an electric signal to the common electrode in order to reduce the influence of voltage drop. Generally, it is necessary to use the metal of the gate and source and drain layers of the driving transistor of the OLED to make the auxiliary electrode.
  • the auxiliary electrode is connected to the common electrode via the via hole in the barrier wall of the planarization layer and the pixel definition layer.
  • the barrier wall of the pixel definition layer needs to have a larger extension in a plane parallel to the planarization layer, which results in a lower aperture ratio of the display panel.
  • the via is relatively deep and the material of the common electrode is usually a transparent conductive oxide material, the overlap between the common electrode and the auxiliary electrode is easily broken, which affects the product yield.
  • FIG. 1 schematically shows the structure of a display substrate 100 according to an embodiment of the present disclosure.
  • the display substrate 100 includes a planarization layer 105 and a pixel definition layer 110 on the planarization layer 105.
  • the planarization layer 105 may be formed of resin.
  • the pixel definition layer 110 may be made of organic insulating materials, including but not limited to polysiloxane-based materials, acrylic-based materials, or polyimide-based materials.
  • the pixel definition layer 110 includes a retaining wall 111 and an opening 112 defined by the retaining wall 111.
  • the display substrate 100 further includes a first electrode 120 on the planarization layer 105 and in the opening 112.
  • the first electrode 120 may be electrically connected to the pixel driving circuit in and/or under the planarization layer 105.
  • the pixel driving circuit may use a top gate type pixel driving transistor or a bottom gate type pixel driving transistor, such as a back channel etch (BCE) transistor and an etch stop layer (ESL) transistor.
  • BCE back channel etch
  • ESL etch stop layer
  • the display substrate further includes a light emitting part 115 located in the opening 112 and electrically connected to the first electrode 120.
  • the display substrate further includes an auxiliary electrode 125 on the barrier 111 of the pixel definition layer 110 and a second electrode 130 covering the auxiliary electrode 125 and the light emitting part 115.
  • the auxiliary electrode 125 and the light emitting part 115 are each electrically connected to the second electrode 130.
  • the first electrode 120 may be an anode of a pixel
  • the second electrode 130 may be a common cathode of each pixel of the display substrate.
  • the light emitting part 115 may include one or more functional layers.
  • the functional layer may include, for example, a hole injection layer, a hole transport layer, a luminescent material layer, an electron injection layer, an electron transport layer, and the like.
  • the auxiliary electrode in the display substrate of the present disclosure is arranged on the barrier wall of the pixel definition layer, it is no longer necessary to connect to the second electrode through the via hole in the barrier wall, so the via hole can be omitted, and the barrier wall is flattened. The extension on the plane of the layer can be reduced, thereby increasing the aperture ratio of the display panel. In addition, since the auxiliary electrode is in direct contact with the second electrode, the problem of easy breakage of the overlap is improved.
  • FIG. 2 schematically shows the structure of a display substrate 200 according to another embodiment of the present disclosure.
  • the display substrate 200 further includes an insulating part 205.
  • the insulating part 205 is arranged between the first electrode 120 and the auxiliary electrode 125.
  • the insulating part 205 can further prevent a short circuit between the first electrode 120 and the auxiliary electrode 125, thereby further improving the yield of the display substrate.
  • the retaining wall 111 includes a top surface and side walls, and the insulating portion 205 is arranged on the side wall of the retaining wall 111.
  • the side walls of the retaining wall 111 may be inclined.
  • the sidewall of the retaining wall 111 and the upper surface of the planarization layer 105 form an acute angle. In some embodiments, this can be interpreted as the aperture of the opening 112 increases in a direction away from the planarization layer 105.
  • the inclined sidewall helps to make the insulating part 205 better cover the retaining wall 111.
  • the insulating part 205 partially covers at least one of the first electrode 120 and the auxiliary electrode 125.
  • a phrase in the form of "at least one of the first element and the second element" refers to the three cases of only the first element, only the second element, and both the first element and the second element. Incorporating into the present disclosure, the insulating part 205 may only partially cover the first electrode 120, only partially cover the auxiliary electrode 125, or partially cover both at the same time. As in the embodiment shown in FIG. 2, the insulating portion 205 partially covers the first electrode 120 and the auxiliary electrode 125 at the same time.
  • the insulating portion 205 covers an edge portion of the auxiliary electrode 125 facing away from the planarization layer 105 and/or an edge portion of the first electrode 120 facing away from the planarization layer 105.
  • the term "and/or" means any one or any combination of multiple items connected by it.
  • the expression "the insulating part 205 covers the edge part of the surface of the auxiliary electrode 125 away from the planarization layer 105 and/or the edge part of the surface of the first electrode 120 away from the planarization layer 105" includes the following solution: the insulating part 205 only Covers the edge portion of the surface of the auxiliary electrode 125 away from the planarization layer 105, the insulating portion 205 only covers the edge portion of the surface of the first electrode 120 away from the planarization layer 105, and the insulating portion 205 covers both the surface of the auxiliary electrode 125 away from the planarization
  • the edge portion of the surface of the layer 105 is the edge portion of the surface of the first electrode 120 that faces away from the planarization layer 105.
  • the edge portion of the first electrode 120 and/or the auxiliary electrode 125 can be wrapped to enhance the electrical insulation effect.
  • this arrangement can prevent the precursor material of the functional layer of the light-emitting part 115 from overflowing onto the auxiliary electrode 125 during the manufacturing process of the display substrate.
  • the insulating portion 205 partially covers the auxiliary electrode 125 (for example, covering the edge portion of the upper surface of the auxiliary electrode 125), and the portion 205a of the insulating portion 205 covering the auxiliary electrode 125 is vertically
  • the maximum thickness 205h in the direction of the planarization layer 105 is between between.
  • the drop of the second electrode 130 from the insulating portion 205 to the auxiliary electrode 125 will not be too large, thereby optimizing the overlap effect between the second electrode 130 and the auxiliary electrode 125, and improving the reliability of the electrical connection between the two. Sex.
  • the thickness of the second electrode 130 may be greater than
  • the light emitting part 115 includes a functional layer.
  • the functional layer can be formed by printing and drying the precursor material.
  • the precursor material is liquid.
  • the retaining wall 111 may contain a hydrophilic material for the precursor material (for example, there may be a fluorine-containing resin material in the retaining wall, which is hydrophilic with respect to the precursor material), so the precursor material Because of the infiltration effect, the water may climb along the side of the retaining wall 111. When the droplets of the precursor material are large, they may even overflow the retaining wall.
  • the light-emitting portion 115 finally obtained after drying the precursor material may not be flat (for example, the upper surface of the light-emitting portion may be curved, that is, the uniformity of the thickness of the light-emitting portion becomes poor). This may cause uneven brightness of each pixel. And, as the number of printed functional layers increases, the uniformity problem will be magnified. For this reason, the material of the insulating portion 205 can be selected so that the hydrophobicity of the insulating portion 205 to the precursor material of the functional layer is stronger than the hydrophobicity of the barrier 111 to the precursor material of the functional layer.
  • the retaining wall 111 may be composed of a single layer structure, or may be a stacked layer including a plurality of layer structures.
  • the hydrophobicity of the insulating part to the precursor material can be made stronger than the hydrophobicity of the single layer structure to the precursor material.
  • the hydrophobicity of the insulating part with respect to the precursor material can be made stronger than that of the layer with the weakest hydrophobicity for the precursor material in the plurality of layer structures.
  • the retaining wall includes an acrylic material layer and a fluororesin material layer.
  • the material of the insulating part is selected to make the hydrophobicity of the precursor material stronger than that of the fluorine-containing resin material
  • the hydrophobicity of the layer for the precursor material can improve the above-mentioned climbing problem.
  • the material of the insulating part can be selected so that the hydrophobicity of the insulating part with respect to the precursor material can be stronger than that of each layer in the plurality of layer structures. In this way, the climbing degree of the edge of the functional layer along the insulating portion 205 is significantly less than that along the retaining wall 111. Therefore, the existence of the insulating portion 205 can alleviate the climbing problem of the functional layer along the sidewall of the retaining wall 111, and help to improve the uniformity of pixel light emission.
  • the insulating part 205 may include a water and oxygen barrier material.
  • the material of the retaining wall 111 contains water and oxygen components. During the manufacturing and use of the display substrate, the water and oxygen components may escape from the retaining wall 111 and corrode other components in the display substrate. Since the insulating part 205 includes a water and oxygen barrier material and is arranged on the side wall of the retaining wall 111, it can prevent the water and oxygen from diffusing into the interior of the display substrate, which improves the reliability of the display substrate.
  • the water and oxygen barrier material includes silicon oxide, silicon nitride or silicon oxynitride, and other materials that can block the diffusion of water and oxygen.
  • the materials of the auxiliary electrode 125 and the first electrode 120 may be the same. In this way, in the process of manufacturing the display substrate, the auxiliary electrode 125 and the first electrode 120 can be formed through the same patterning process and using the same mask. This saves the production process of the display substrate and also saves the number of masks required.
  • the materials of the auxiliary electrode 125 and the first electrode 120 are the same reflective metal, that is, the light emitting mode of the light emitting part 115 is the top light emitting mode.
  • the light emitted from the light emitting part 115 is reflected by the first electrode 120 and travels in a direction from the first electrode 120 to the second electrode 130 (which may be a transparent electrode) after being reflected.
  • the light emitted by the light-emitting part 115 does not pass through the pixel driving circuit, so the pixel driving circuit does not affect the display effect.
  • whether the base substrate of the display substrate transmits light will not affect the display effect.
  • the auxiliary electrode 125 and the second electrode 130 may be a single-layer structure formed of a single metal (such as Ag, Cu, Al, or Mo, etc.); or a multilayer stacked structure formed of multiple metals, such as MoNb /Cu/MoNb stack, etc.; or a single-layer structure formed by alloy materials (such as AlNd or MoNb, etc.); or a multilayer stack structure formed by metal and transparent conductive oxide (such as ITO, AZO, etc.), such as ITO/Ag/ ITO laminate, etc.
  • the auxiliary electrode 125 and the second electrode 130 may also adopt other suitable materials and structures, which are not limited in the present disclosure.
  • the display substrate since the auxiliary electrode is formed on the barrier wall, the barrier wall does not need to accommodate the via hole, so that the aperture ratio of the display substrate increases.
  • the display substrate includes an insulating part arranged between the first electrode and the auxiliary electrode, which strengthens the electrical insulation between the first electrode and the auxiliary electrode, and reduces the climbing of the light-emitting part on the retaining wall. , Improve the display uniformity of pixels.
  • the insulating portion can wrap the edges of the first electrode and the auxiliary electrode, so that the electrical insulation effect can be enhanced.
  • the insulating part can also prevent the diffusion of water and oxygen inside the display substrate, which increases the reliability of the display substrate.
  • a display device including the display substrate according to an embodiment of the present disclosure.
  • the display device has various advantages of the display substrate according to the present disclosure, which will not be repeated here.
  • the display device can be used for any products or components with display functions such as mobile phones, tablet computers, televisions, monitors, notebook computers, digital photo frames, and navigators.
  • FIG. 3 schematically shows a flowchart of a method 300 for manufacturing a display substrate according to an embodiment of the present disclosure.
  • 4A-4C schematically show cross-sectional views of various intermediate structures of the display substrate in the process of the method for manufacturing the display substrate according to the present disclosure.
  • the method 300 includes the following steps.
  • step S305 a planarization layer is formed.
  • a pixel definition layer is formed on the planarization layer, where the pixel definition layer includes an opening and a retaining wall surrounding the opening.
  • step S315 an auxiliary electrode is formed on the barrier of the pixel definition layer, and a first electrode is formed on a portion of the planarization layer corresponding to the opening of the pixel definition layer.
  • step S320 a light emitting part is formed on the first electrode.
  • step S325 a second electrode is formed on the auxiliary electrode and the light emitting part.
  • a base substrate is provided, and devices such as active matrix, various wirings, pixel capacitors, etc. are formed on the base substrate (not shown in the figure).
  • a planarization layer 105 is formed on the base substrate on which the device is formed (step S305).
  • the material of the planarization layer 105 may be resin, for example.
  • a pixel definition layer 110 is formed on the planarization layer 105 (step S310), where the pixel definition layer 110 includes an opening 112 and a barrier 111.
  • FIG. 4A schematically shows a cross-sectional view of the intermediate structure of the display substrate of the planarization layer 105 and the pixel definition layer 110 formed after the step S310 is completed.
  • the active matrix, various wirings, pixel capacitors and other devices are omitted in the drawings.
  • an auxiliary electrode 125 is formed on the barrier 111 of the pixel definition layer 110, and a first electrode 120 is formed on the portion of the planarization layer 105 corresponding to the opening 112 of the pixel definition layer (step S315). After this step, the first electrode 120 is formed in the opening 112. The first electrode 120 is electrically connected to the pixel driving circuit in or below the planarization layer 105.
  • the auxiliary electrode 125 and the first electrode 120 may be formed through a patterning process.
  • the auxiliary electrode 125 and the first electrode 120 may be formed by forming an electrode material layer, coating photoresist, exposing and developing the photoresist using a mask, and etching the electrode material layer, respectively.
  • 4B schematically shows a cross-sectional view of the intermediate structure of the display substrate after the first electrode 120 and the auxiliary electrode 125 are formed.
  • the light-emitting part 115 is formed on the first electrode 120 (step S320).
  • the functional layer in the light emitting part 115 may be formed by an inkjet printing process, for example.
  • the inkjet printing process may refer to, for example, spraying a mixture of luminescent material and solvent (ie, precursor material) to a predetermined position (for example, in the opening 112), and drying the mixture to remove The process of removing the solvent and retaining the luminescent material to form a luminescent material layer.
  • FIG. 4C schematically shows a cross-sectional view of the intermediate structure of the display substrate after the light-emitting part 115 is formed.
  • the second electrode 130 is formed on the auxiliary electrode 125 and the light-emitting part 115 (step S325). Specifically, a continuous layer of the second electrode material may be deposited on the auxiliary electrode 125 and the light-emitting part 115 (for example, through a process such as plasma enhanced chemical vapor deposition (PECVD)).
  • the second electrode material may be a transparent conductive material, such as ITO.
  • the second electrode 130 covers the light-emitting part 115 such that the light-emitting part 115 is interposed between the first electrode 120 and the second electrode 125.
  • the respective second electrodes 125 on the display substrate may be connected together to form a common electrode.
  • the second electrode 130 is electrically connected to the auxiliary electrode 125.
  • the auxiliary electrode 125 may provide an electrical signal for the second electrode 130 to reduce the voltage drop of the second electrode and improve the brightness uniformity of each pixel.
  • FIG. 1 A cross-sectional view of the display substrate after the second electrode 130 is formed is shown in FIG.
  • the method 300 further includes: forming an insulating part 205 between the auxiliary electrode 125 and the first electrode 120 (step S330), wherein the insulating part 205 electrically insulates the auxiliary electrode 125 and the first electrode 120.
  • the insulating part 205 can strengthen the electrical insulation between the auxiliary electrode 125 and the first electrode 120.
  • Step S330 may be between step S315 and step S320, that is, after the first electrode 120 and the auxiliary electrode 125 have been formed, the insulating portion 205 is formed therebetween.
  • the insulating part 205 may partially cover at least one of the auxiliary electrode 125 and the first electrode 120.
  • the insulating part 205 may cover the outer edge of the auxiliary electrode 125 and/or the outer edge of the first electrode 120.
  • FIG. 5A schematically shows a cross-sectional view of the intermediate structure of the display substrate after the insulating portion 205 is formed. After that, the light emitting part 115 and the second electrode 130 may be continuously formed on the display substrate on which the insulating part 205 has been formed, so as to obtain the display substrate as shown in FIG. 2.
  • step S315 may include simultaneously forming an auxiliary electrode 125 on the barrier 111 of the pixel definition layer 110 and forming a first electrode 120 on a portion of the planarization layer 105 corresponding to the opening 112 of the pixel definition layer 110 (Ste S316). That is, the auxiliary electrode 152 and the first electrode 120 may be formed at the same time. In this case, the auxiliary electrode 152 and the first electrode 120 have the same material. This simplifies the process flow.
  • step S316 may include simultaneously forming the first electrode stack 505 and the auxiliary electrode stack 510 in one patterning process (step S340), wherein the auxiliary electrode stack 510 includes the auxiliary electrode 125 and the auxiliary electrode 125 is located away from the flat surface.
  • the photoresist 515 on the side of the planarization layer, and the first electrode stack 505 includes a first electrode 120 and a photoresist 516 on the side of the first electrode 120 away from the planarization layer. That is, actually, when the first electrode stack 505 and the auxiliary electrode stack 510 are formed, the first electrode 120 and the auxiliary electrode 125 are formed.
  • FIG. 5B schematically shows a cross-sectional view of the intermediate structure of the display substrate on which the first electrode stack 505 and the auxiliary electrode stack 510 are formed.
  • FIG. 6 schematically shows a flowchart of a method for manufacturing a display substrate according to another embodiment of the present disclosure.
  • step S316 (for example, step S340) may include the following steps.
  • step S341 an electrode material layer is deposited on the barrier wall of the pixel definition layer and the portion of the planarization layer corresponding to the opening of the pixel definition layer.
  • step S342 a photoresist layer is coated on the electrode material layer.
  • step S343 the photoresist layer on the electrode material layer is exposed and developed to expose a part of the electrode material layer.
  • step S344 the exposed portion of the electrode material layer is etched to obtain the first electrode stack and the auxiliary electrode stack.
  • step S330 forming the insulating portion 205 between the auxiliary electrode 125 and the first electrode 120 (step S330) can be performed by ashing the photoresist on the auxiliary electrode 125 and the first electrode 120.
  • FIG. 7 schematically shows a flowchart of a method for manufacturing a display substrate according to another embodiment of the present disclosure. As shown in Fig. 7, step S330 may include the following steps.
  • step S331 the photoresist 515 on the side of the auxiliary electrode 125 away from the planarization layer 105 and the photoresist 516 on the side of the first electrode 120 away from the planarization layer 105 are partially ashed to expose the auxiliary electrode 125 The edge area and the edge area of the first electrode 120.
  • step S332 a layer of insulating material is deposited.
  • step S333 the unashed photoresist 525 on the auxiliary electrode 125 and the unashed photoresist 526 on the first electrode 120 are stripped, so that the insulating material on the stripped unashed photoresist is removed, And the insulating material that has not been removed forms the insulating portion 205.
  • the process of forming the insulating part does not need to strip the photoresist on the first electrode and the auxiliary electrode first, and does not need to go through the steps of traditional exposure, development, etching, etc., making the process of forming the insulating part simpler and saving Mask.
  • Photoresist ashing is a process of removing photoresist. For example, when the photoresist is placed in a plasma environment (for example, an oxygen plasma environment), it will react with oxygen to generate CO, CO 2 , H 2 O, N 2 and other volatile substances. It should be understood that after partial ashing, the volume of the remaining photoresist is smaller, and the structure first covered by the ashed photoresist is exposed.
  • a plasma environment for example, an oxygen plasma environment
  • FIG. 8A schematically shows a cross-sectional view of the intermediate structure of the display substrate obtained after the photoresist in the auxiliary electrode stack 510 and the first electrode stack 505 is partially ashed.
  • the term "edge region" can be understood as a part farther from the geometric center of the electrode in a direction parallel to the planarization layer, rather than the "side surface" of the electrode.
  • FIG. 8B schematically shows a cross-sectional view of a display substrate formed with an insulating material layer.
  • an organic solvent for example, acetone
  • the organic solvent can pass through the insulating material layer through the pores and contact the unashed photoresist.
  • FIG. 8C schematically shows a cross-sectional view of the intermediate structure of the display substrate after forming the light-emitting part. Then, the second electrode 130 may be formed on the auxiliary electrode 125 and the light emitting part 115. The structure of the obtained display substrate is shown in FIG. 2.
  • the auxiliary electrode and the first electrode can be manufactured simultaneously in the same patterning process, and the insulating part can be manufactured by ashing of photoresist, which saves the process flow.

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Abstract

提供了显示基板、显示装置以及制作显示基板的方法。显示基板包括平坦化层；位于平坦化层上的像素定义层，其中像素定义层包括开口和围绕所述开口的挡墙；位于平坦化层上并且在所述开口之内的第一电极；位于开口之内且与第一电极电连接的发光部；位于像素定义层的挡墙上的辅助电极；位于第一电极与辅助电极之间的绝缘部；以及，覆盖辅助电极和发光部的第二电极。

Description

显示基板、显示装置以及制作显示基板的方法
相关申请的交叉引用
本申请要求于2019年6月21日递交的中国专利申请201910542427.7的优先权。
技术领域
本公开涉及显示基板、显示装置以及制作显示基板的方法。
背景技术
OLED(Organic Light Emitting Diode，有机发光二极管)被广泛应用于各种显示设备中。在对OLED像素进行供电时，可以通过设置辅助电极来改善像素的亮度均匀性。
发明内容
根据本公开的一方面，提供了一种显示基板，包括平坦化层；位于所述平坦化层上的像素定义层，其中所述像素定义层包括开口和围绕所述开口的挡墙；位于所述平坦化层上并且在所述开口之内的第一电极；位于所述开口之内且与所述第一电极电连接的发光部；位于所述像素定义层的所述挡墙上的辅助电极；位于所述第一电极与所述辅助电极之间的绝缘部；以及，覆盖所述辅助电极和所述发光部的第二电极。
在一些实施例中，所述绝缘部部分地覆盖所述第一电极和所述辅助电极中的至少一个。
在一些实施例中，所述绝缘部覆盖以下中的至少一个：所述辅助电极的背离所述平坦化层的表面的边缘部分；以及所述第一电极的背离所述平坦化层的表面的边缘部分。
在一些实施例中，所述绝缘部部分地覆盖所述辅助电极，并且覆盖所述辅助电极的所述绝缘部的部分在垂直于所述平坦化层的方向上的最大厚度介于
Figure PCTCN2020092699-appb-000001
至
Figure PCTCN2020092699-appb-000002
之间。
在一些实施例中，所述发光部包括由前驱体材料形成的功能层，所述挡墙包括单个层结构，并且所述绝缘部针对所述前驱体材料的疏水性强于所述单个层结构针对所述前驱体材料的疏水性。
在一些实施例中，所述发光部包括由前驱体材料形成的功能层，所述挡墙包括多个层结构的叠层，并且所述绝缘部针对所述前驱体材料的疏水性强于所多个层结构中针对 所述前驱体材料的疏水性最弱的层结构的针对所述前驱体材料的疏水性。
在一些实施例中，所述绝缘部覆盖所述挡墙的侧壁。
在一些实施例中，所述侧壁与所述平坦化层的上表面成锐角。
在一些实施例中，所述绝缘部的材料包括水氧阻隔材料。
根据本公开的另一方面，提供了一种显示装置，包括根据本公开任一实施例所述的显示基板。
根据本公开的又一方面，提供了一种制作显示基板的方法，包括：形成平坦化层；在所述平坦化层上形成像素定义层，其中所述像素定义层包括开口和围绕所述开口的挡墙；同时在所述像素定义层的挡墙上形成辅助电极并在所述平坦化层的对应于所述开口的部分上形成第一电极；在所述辅助电极和所述第一电极之间形成绝缘部，其中所述绝缘部使所述辅助电极与所述第一电极电绝缘；在所述第一电极上形成发光部；以及在所述辅助电极和所述发光部上形成第二电极。
在一些实施例中，同时在所述像素定义层的挡墙上形成辅助电极并在所述平坦化层的对应于所述开口的部分上形成第一电极包括：在一个构图工艺中同时形成第一电极叠层和辅助电极叠层，其中所述辅助电极叠层包括所述辅助电极和位于所述辅助电极背离所述平坦化层一侧的光刻胶；并且所述第一电极叠层包括所述第一电极和位于所述第一电极背离所述平坦化层一侧的光刻胶，并且，在所述辅助电极和所述第一电极之间形成绝缘部包括：对位于所述辅助电极背离所述平坦化层一侧的光刻胶和位于所述第一电极背离所述平坦化层一侧的光刻胶进行部分灰化，以暴露所述辅助电极的边缘区域和所述第一电极的边缘区域；沉积绝缘材料层；以及剥离所述辅助电极上的未灰化光刻胶和所述第一电极上的未灰化光刻胶，使得所剥离的未灰化光刻胶上的绝缘材料被移除，且未被移除的绝缘材料形成所述绝缘部。
在一些实施例中，通过在一个构图工艺中同时形成第一电极叠层和辅助电极叠层包括：在所述像素定义层的挡墙和所述平坦化层的对应于所述开口的部分上沉积电极材料层；在所述电极材料层上涂覆光刻胶层；对所述电极材料层上的所述光刻胶层进行曝光和显影，以暴露所述电极材料层的一部分；刻蚀所暴露的所述电极材料层的所述部分，以得到所述第一电极叠层和所述辅助电极叠层。
附图说明
本公开的示例现在将参考附图予以详细地描述，在附图中：
图1示意性地示出了根据本公开实施例的显示基板的截面图；
图2示意性地示出了根据本公开另一实施例的显示基板的截面图；
图3示意性地示出了根据本公开实施例的制作显示基板的方法的流程图；
图4A-图4C示意性地示出了根据本公开实施例的制作显示基板的方法的过程中的显示基板的中间结构的截面图；
图5A-图5B示意性地示出了根据本公开另一实施例的制作显示基板的方法的过程中的显示基板的中间结构的截面图；
图6示意性地示出了根据本公开另一实施例的制作显示基板的方法的流程图；
图7示意性地示出了根据本公开又一实施例的制作显示基板的方法的流程图；以及
图8A-图8C示意性地示出了根据本公开又一实施例的制作显示基板的方法的过程中的显示基板的中间结构的截面图。
应当理解，附图仅为示意性的，且不一定按照比例。贯穿所有的附图，相同的附图标记指代相同或相似的部分。
具体实施方式
下面将参考附图对根据本公开的显示基板、显示装置以及用于制作显示基板的方法进行进一步阐述。应当理解，下文的描述仅仅用于解释本公开的内容，而非限制本公开的范围。
OLED由于其高发光效率、低能耗、高对比度、高反应速度等众多优势被广泛应用于各种显示设备中。根据发光部的出光方向与基板的关系，OLED显示面板通常存在顶发射与底发射两种出光模式，即，出光方向朝向衬底基板的底发射模式，和出光方向背离衬底基板的顶发射模式。在底发射模式中，发光部出射的光受到基板上的薄膜晶体管等器件的阻挡。所以与底发射模式相比，顶发射模式可以实现更高的分辨率和更大的开口率，因此更受欢迎。顶发射模式的OLED显示面板中的各OLED像素可以包括公共电极，例如公共阴极。由于公共电极横跨多个像素，所以其上可能产生电压降，即公共电极各处的电位并不一致。这可能影响各像素的亮度均匀性。为了减少公共电极上的电压降，可以在显示基板中设置辅助电极。辅助电极向公共电极提供电信号，以便减少电压降的影响。通常，需要利用OLED的驱动晶体管的栅极和源漏极层的金属来制作辅助电极。辅助电极经由平坦化层和像素定义层的挡墙中的过孔而连接至公共电极。为了容纳过孔，像素定义层的挡墙需要在平行于平坦化层的平面内具有较大延伸，这导致显示面板的开口率较低。另外，由于过孔较深，且公共电极的材料通常是透明导电氧化物材料，所以公共电极和辅助电极间的搭接容易断裂，以致影响产品良率。
根据本公开的一方面，提出了一种显示基板。图1示意性地示出了根据本公开一实施例的显示基板100的结构。显示基板100包括平坦化层105和位于平坦化层105上的像素定义层110。在一些实施例中，平坦化层105可以由树脂形成。像素定义层110可以采用有机绝缘部材料，包含但不限于聚硅氧烷系材料，亚克力系材料，或聚酰亚胺系材料等。像素定义层110包括挡墙111和由挡墙111限定的开口112。显示基板100还包括位于平坦化层105上且位于开口112之内的第一电极120。第一电极120可以电连接到平坦化层105内和/或下方的像素驱动电路。为了附图的清楚性和简洁性，附图中省略了所述像素驱动电路及平坦化层内和/或下方的其它元件。另外，像素驱动电路可以采用顶栅型像素驱动晶体管或底栅型像素驱动晶体管，例如背沟道刻蚀型(BCE)晶体管和刻蚀阻挡层型(ESL)晶体管。显示基板还包括位于开口112内的发光部115，其与第一电极120电连接。显示基板还包括位于像素定义层110的挡墙111上的辅助电极125以及覆盖辅助电极125和发光部115的第二电极130。辅助电极125和发光部115各自与第二电极130电连接。在一些实施例中，第一电极120可以是像素的阳极，第二电极130可以是显示基板各个像素的公共阴极。发光部115可以包括一种或多种功能层。例如，功能层例如可以包括空穴注入层、空穴传输层、发光材料层、电子注入层、电子传输层等。
由于本公开的显示基板中的辅助电极布置在像素定义层的挡墙上，因此不再需要经过挡墙中的过孔来连接到第二电极，所以过孔可被省略，挡墙在平坦化层所在平面上的延伸可以减少，从而提高显示面板的开口率。另外，由于辅助电极与第二电极直接接触，所以搭接容易断裂的问题得到改善。
图2示意性地示出了根据本公开另一实施例的显示基板200的结构。如图2所示，显示基板200还包括绝缘部205。绝缘部205布置在第一电极120与辅助电极125之间。绝缘部205可以进一步防止第一电极120与辅助电极125之间出现短路，从而进一步提高显示基板的良率。在一些实施例中，所述挡墙111包括顶表面和侧壁，并且绝缘部205布置在挡墙111的侧壁上。在一些实施例中，挡墙111的侧壁可以是倾斜的。例如，挡墙111的侧壁与平坦化层105的上表面成锐角。在一些实施例中，这可被解读为，开口112的孔径在远离平坦化层105的方向上递增。倾斜的侧壁有助于使绝缘部205更好地覆盖在挡墙111上。
在一些实施例中，绝缘部205部分地覆盖第一电极120和辅助电极125中的至少一个。形如“第一元素和第二元素中的至少一个”的短语表示仅有第一元素、仅有第二元素、以及同时含有第一元素和第二元素这三种情况。结合到本公开中，绝缘部205可以仅部分地覆盖第一电极120、仅部分地覆盖辅助电极125、或者同时部分地覆盖这两者。 如在图2所示的实施例中，绝缘部205同时部分覆盖第一电极120和辅助电极125。在更具体的实施例中，绝缘部205覆盖辅助电极125的背离平坦化层105的表面的边缘部分和/或第一电极120的背离平坦化层105的表面的边缘部分。术语“和/或”表示由其连接的多个项目中的任何一个或任何组合。例如，表述“绝缘部205覆盖辅助电极125的背离平坦化层105的表面的边缘部分和/或第一电极120的背离平坦化层105的表面的边缘部分”包括下述方案：绝缘部205仅覆盖辅助电极125的背离平坦化层105的表面的边缘部分，绝缘部205仅覆盖第一电极120的背离平坦化层105的表面的边缘部分，以及绝缘部205既覆盖辅助电极125的背离平坦化层105的表面的边缘部分又第一电极120的背离平坦化层105的表面的边缘部分。通过这种布置，可以包裹第一电极120和/或辅助电极125的边缘部分，以增强电绝缘效果。同时，这种布置可以防止发光部115的功能层的前驱体材料在显示基板的制作过程中溢出到辅助电极125上。
在一些实施例中，如图2所示，绝缘部205部分地覆盖辅助电极125(例如，覆盖辅助电极125的上表面的边缘部分)，并且覆盖辅助电极125的绝缘部205的部分205a在垂直于平坦化层105的方向上的最大厚度205h介于
Figure PCTCN2020092699-appb-000003
之间。在这种情况下，第二电极130从绝缘部205到辅助电极125的落差不会过大，从而优化了第二电极130与辅助电极125的搭接效果，提高了两者间电连接的可靠性。另外，在一些实施例中，第二电极130的厚度可以大于
Figure PCTCN2020092699-appb-000004
在一些实施例中，发光部115包括功能层。功能层可以通过打印并干燥前驱体材料而形成。在制作功能层时，前驱体材料为液态。由于挡墙111中可能包含针对该前驱体材料具有亲水性的材料(例如，挡墙中可能存在含氟树脂材料，其相对于所述前驱体材料具有亲水性)，所以前驱体材料中的水分因为浸润的作用有可能沿挡墙111的侧面爬升。前驱体材料的液滴较大时甚至会溢出挡墙。因此在对前驱体材料进行烘干之后最终得到的发光部115可能不平坦(例如发光部的上表面可能出现弯曲，即发光部的厚度的均匀性变差)。这可能导致各个像素的发光亮度不均匀。并且，伴随着打印的功能层的数量的增多，均匀性问题会被放大。为此，可以选择绝缘部205的材料，使得绝缘部205针对功能层的前驱体材料的疏水性强于挡墙111针对功能层的前驱体材料的疏水性。例如，挡墙111可以由单个层结构组成，或者可以是包括多个层结构的叠层。对于由单个层结构组成的挡墙，为了改善前驱体材料在挡墙侧面爬升的问题，可以使绝缘部针对前驱体材料的疏水性强于该单个层结构针对前驱体材料的疏水性。对于包括多个层结构的挡墙，可以使绝缘部针对前驱体材料的疏水性强于该多个层结构中针对前驱体材料的疏水性最弱的层。例如，在一些实施例中，挡墙包括亚克力系材料层和含氟树脂材料层。 由于含氟树脂材料层针对前驱体材料的疏水性弱于亚克力系材料层针对前驱体材料的疏水性，所以通过选择绝缘部的材料，使其针对前驱体材料的疏水性强于含氟树脂材料层针对前驱体材料的疏水性，可以改善上述爬升问题。显然，绝缘部的材料可以被选择以使绝缘部针对前驱体材料的疏水性可以强于该多个层结构中的每一个层。这样，功能层的边缘沿绝缘部205的爬升程度显著小于沿挡墙111的爬升程度。因此，绝缘部205的存在可以减轻功能层沿挡墙111的侧壁的爬升问题，有助于提升像素发光的均匀性。
在一些实施例中，绝缘部205可以包括水氧阻隔材料。通常，挡墙111的材料中含有水氧成分。在显示基板的制造和使用过程中，所述水氧成分可能从挡墙111逸出，并侵蚀显示基板中的其它元件。由于绝缘部205包括水氧阻隔材料，且被布置在挡墙111的侧壁上，因此其可以阻止所述水氧成分扩散到显示基板内部，这提高了显示基板的可靠性。在一些实施例中，水氧阻隔材料包括氧化硅、氮化硅或氮氧化硅，以及其它可以阻挡水氧扩散的材料。
在一些实施例中，辅助电极125和第一电极120的材料可以相同。这样，在制作显示基板的过程中，辅助电极125和第一电极120能够通过同一套构图工艺并利用同一个掩模板形成。这节约了显示基板的制作流程，也节省了所需掩模板的数量。
在一些实施例中，辅助电极125和第一电极120的材料是相同的反射性金属，即，发光部115的发光模式为顶发光模式。在这种情况下，从发光部115发出的光被第一电极120反射，并在反射后沿从第一电极120到第二电极130(其可以是透明电极)的方向行进。也就是说，发光部115发出的光不会经过像素的驱动电路，所以像素驱动电路不会影响显示效果。另外，显示基板的衬底基板是否透光也不会影响显示效果。在一些实施例中，辅助电极125和第二电极130可以是由单种金属(如Ag、Cu、Al或Mo等)形成的单层结构；或多种金属形成的多层堆叠结构，如MoNb/Cu/MoNb叠层等；或合金材料(如AlNd或MoNb等)形成的单层结构；或金属和透明导电氧化物(如ITO、AZO等)形成的多层堆叠结构，如ITO/Ag/ITO叠层等。辅助电极125和第二电极130还可以采用其他合适的材料和结构，本公开对此没有限制。
根据本公开的显示基板由于辅助电极被形成在挡墙上，所以挡墙无需容纳过孔，使得显示基板的开口率增加。并且，在一些实施例中，显示基板包括布置在第一电极与辅助电极之间的绝缘部，加强了第一电极与辅助电极之间的电绝缘，减小了发光部在挡墙上的爬升，改善了像素的显示均匀性。而且，绝缘部可以包裹第一电极与辅助电极的边缘，因此可以增强电绝缘效果。另外，绝缘部还可以阻止显示基板内部的水氧扩散，增加了显示基板的可靠性。
根据本公开的另一方面，提供了一种显示装置，其包括根据本公开实施例所述的显示基板。该显示装置具有根据本公开的显示基板的各种优点，在此不再赘述。显示装置可以用于手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
根据本公开的又一方面，提供了一种制作显示基板的方法。图3示意性地示出了根据本公开的实施例的制作显示基板的方法300的流程图。图4A-4C示意性地示出了根据本公开的制作显示基板的方法的过程中的显示基板的各种中间结构的截面图。如图3所示，所述方法300包括下述步骤。
在步骤S305，形成平坦化层。
在步骤S310，在平坦化层上形成像素定义层，其中像素定义层包括开口和围绕所述开口的挡墙。
在步骤S315，在像素定义层的挡墙上形成辅助电极，并在平坦化层的对应于像素定义层的开口的部分上形成第一电极。
在步骤S320，在第一电极上形成发光部。
在步骤S325，在辅助电极和发光部上形成第二电极。
下面详细描述根据本公开的制作显示基板的方法300。首先，提供衬底基板，并在衬底基板上形成有源矩阵、各种走线、像素电容等器件(图中未示出)。之后，在形成有所述器件的衬底基板上形成平坦化层105(步骤S305)。平坦化层105的材料例如可以是树脂。然后，在平坦化层105上形成像素定义层110(步骤S310)，其中像素定义层110包括开口112和挡墙111。图4A示意性地示出了步骤S310完成后所形成的平坦化层105和像素定义层110的显示基板的中间结构的截面图。为了附图的简洁性和清楚性，附图中省略了所述有源矩阵、各种走线、像素电容等器件。
之后，在像素定义层110的挡墙上111形成辅助电极125，并在平坦化层105的对应于像素定义层的开口112的部分上形成第一电极120(步骤S315)。经过此步骤，第一电极120被形成在开口112中。第一电极120与平坦化层105之中或下方的像素驱动电路电连接。辅助电极125和第一电极120可以通过构图工艺来形成。例如，辅助电极125和第一电极120可以分别通过形成电极材料层、涂覆光刻胶、利用掩模板进行光刻胶的曝光和显影、刻蚀电极材料层等步骤来形成。图4B示意性地示出了第一电极120和辅助电极125被形成后的显示基板的中间结构的截面图。
在第一电极120被形成之后，在第一电极120上形成发光部115(步骤S320)。发光部115中的功能层例如可以通过喷墨打印工艺来形成。以发光材料层为例，喷墨打印 工艺例如可以是指将发光材料与溶剂的混合物(即，前驱体材料)喷射到预确定位置(例如，开口112中)，以及对该混合物进行干燥以移除溶剂并保留发光材料以形成发光材料层的工艺。图4C示意性地示出了发光部115被形成后的显示基板的中间结构的截面图。
之后，在辅助电极125和发光部115上形成第二电极130(步骤S325)。具体的，可以在辅助电极125和发光部115上(例如，通过等离子体增强化学气相沉积(PECVD)等工艺)沉积连续的一层第二电极材料。第二电极材料可以是透明导电材料，例如ITO。对于单个像素来说，第二电极130覆盖发光部115，使得发光部115介于第一电极120和第二电极125之间。显示基板上的各个第二电极125可以连接在一起，形成公共电极。第二电极130与辅助电极125电连接。辅助电极125可以为第二电极130提供电信号，以减少第二电极的电压降，提高各个像素的亮度均匀性。第二电极130被形成后的显示基板的截面图如图1所示。
在一些实施例中，所述方法300还包括：在辅助电极125和第一电极120之间形成绝缘部205(步骤S330)，其中绝缘部205使辅助电极125与第一电极120电绝缘。如上文所述，绝缘部205能够加强辅助电极125与第一电极120之间的电绝缘。步骤S330可以介于步骤S315和步骤S320之间，即在第一电极120和辅助电极125已被形成后，在此二者之间形成绝缘部205。绝缘部205可以部分地覆盖辅助电极125和第一电极120中的至少一个。例如，绝缘部205可以覆盖辅助电极125的外边缘和/或第一电极120的外边缘。图5A示意性地示出了形成绝缘部205后的显示基板的中间结构的截面图。之后，可以在已经形成有绝缘部205的显示基板上继续形成发光部115和第二电极130，以得到如图2所示的显示基板。
在一些实施例中，步骤S315可以包括同时在像素定义层110的挡墙111上形成辅助电极125并在平坦化层105的对应于像素定义层110的开口112的部分上形成第一电极120(步骤S316)。也就是说，辅助电极152和第一电极120可以同时形成。在这种情况下，辅助电极152和第一电极120具有相同的材料。这样简化了工艺流程。例如，步骤S316可以包括：在一个构图工艺中同时形成第一电极叠层505和辅助电极叠层510(步骤S340)，其中辅助电极叠层510包括辅助电极125和位于所述辅助电极125背离平坦化层一侧的光刻胶515，并且，第一电极叠层505包括第一电极120和位于所述第一电极120背离平坦化层一侧的光刻胶516。也就是说，实际上，在第一电极叠层505和辅助电极叠层510被形成时，第一电极120和辅助电极125就被形成。图5B示意性地示出了形成有第一电极叠层505和辅助电极叠层510的显示基板的中间结构的截面图。
下面具体描述形成第一电极叠层505和辅助电极叠层510的过程。图6示意性地示出了根据本公开另一实施例的制作显示基板的方法的流程图。如图6所示，步骤S316(例如，步骤S340)可以包括以下步骤。
在步骤S341，在所述像素定义层的挡墙和所述平坦化层的对应于所述像素定义层的开口的部分上沉积电极材料层。
在步骤S342，在所述电极材料层上涂覆光刻胶层。
在步骤S343，对所述电极材料层上的所述光刻胶层进行曝光和显影，以暴露所述电极材料层的一部分。
在步骤S344，刻蚀所暴露的所述电极材料层的所述部分，以得到所述第一电极叠层和所述辅助电极叠层。
在此基础上，在辅助电极125和第一电极120之间形成绝缘部205(步骤S330)可以通过对辅助电极125和第一电极120之上的光刻胶进行灰化来进行。图7示意性地示出了根据本公开又一实施例的制作显示基板的方法的流程图。如图7所示，步骤S330可以包括以下步骤。
在步骤S331，对位于辅助电极125背离平坦化层105一侧的光刻胶515和位于第一电极120背离平坦化层105一侧上的光刻胶516进行部分灰化，以暴露辅助电极125的边缘区域和第一电极120的边缘区域。
在步骤S332，沉积绝缘材料层。
在步骤S333，剥离辅助电极125上的未灰化光刻胶525和第一电极120上的未灰化光刻胶526，使得所剥离的未灰化光刻胶上的绝缘材料被移除，且未被移除的绝缘材料形成绝缘部205。
通过上述方法，形成绝缘部的过程无需首先剥离第一电极和辅助电极上的光刻胶，也无需经过传统的曝光、显影、刻蚀等步骤，使得形成绝缘部的过程更简单，而且节省了掩模板。
下面结合附图具体描述形成绝缘部205的过程。光刻胶灰化是一种移除光刻胶的过程。例如，当光刻胶被放置于等离子体环境(例如，氧等离子体环境)中时，其会与氧气反应，以生成CO、CO 2、H 2O、N 2等挥发性物质。应理解，经过部分灰化后，剩余的光刻胶的体积更小，且被灰化的光刻胶原先覆盖的结构被暴露。因此，对于辅助电极叠层510和第一电极叠层505来说，在辅助电极125上的光刻胶515和第一电极120上的光刻胶516被部分灰化后，辅助电极125的边缘和第一电极120的边缘会被暴露。可以通过控制等离子体环境的各种参数，例如功率、气体流量等，以及控制灰化的时间来控制暴露出 的辅助电极125和第一电极120的边缘区域的尺寸。图8A示意性地示出了辅助电极叠层510和第一电极叠层505中的光刻胶被部分灰化后所得到的显示基板的中间结构的截面图。术语“边缘区域”可以理解为在平行于平坦化层的方向上离电极的几何中心更远的部分，而非电极的“侧面”。
然后，可以在光刻胶被部分灰化之后的显示基板上利用CVD、PVD、PECVD等工艺形成绝缘材料层。图8B示意性地示出了形成有绝缘材料层的显示基板的截面图。之后，可以剥离辅助电极125上和第一电极120上的未灰化光刻胶525、526。在一些实施例中，可以利用有机溶剂(例如，丙酮)来剥离未灰化光刻胶525、526。由于绝缘材料层中存在孔隙，有机溶剂可以通过孔隙穿过绝缘材料层并与未灰化光刻胶接触。未灰化光刻胶溶解于有机溶剂中。原本沉积于未灰化光刻胶上的绝缘材料随着光刻胶的溶解而从显示基板移除，而沉积在第一电极120、挡墙111和辅助电极125上的绝缘材料未被移除，形成绝缘部205。之后，可以通过喷墨打印工艺在开口112内形成发光部115。图8C示意性地示出了形成发光部后的显示基板的中间结构的截面图。然后可以在辅助电极125和发光部115上形成第二电极130。所得到的显示基板的结构如图2所示。
通过根据本公开的制作显示基板的方法，可以在同一个构图工艺中同时制作辅助电极与第一电极，并且绝缘部可借助于光刻胶灰化来制作，这样节省了工艺流程。
如本领域技术人员将显而易见的，执行这些本公开的实施例的方法的许多不同的方式是可能的。例如，可以改变步骤的顺序，或者可以并行执行一些步骤。此外，在步骤之间可以插入其他方法步骤。插入可以表示诸如本文所描述的方法的改进，或者可以与该方法无关。此外，在下一步骤开始之前，给定步骤可能尚未完全完成。
将领会，上面的实施例仅通过示例的方式描述。虽然实施例已在附图和前面的描述中详细地图示和描述，这样的图示和描述将被认为是说明性或示例性的并且不是约束性的，并且本发明不限制于所公开的实施例。另外，应理解，各附图中的元件并不一定按比例绘制，附图中显示的尺寸并不表示各元件的实际尺寸或相对尺寸。
通过研究附图和公开内容，本领域技术人员在实践所要求保护的发明时，可以理解和达成对所公开实施例的其它变型。本公开中，词语“包括”不排除其它元素或步骤，并且不定冠词“一”不排除复数。在互不相同的从属权利要求中列举某些措施的纯粹事实并不表示这些措施的组合不能用于获利。权利要求中的任何附图标记不应解释为限制范围。词语第一、第二以及类似词语的使用并不表示任何的排序。这些词将被解释为名称。

Claims (20)

  1. 一种显示基板，包括：
    平坦化层；
    位于所述平坦化层上的像素定义层，其中所述像素定义层包括开口和围绕所述开口的挡墙；
    位于所述平坦化层上并且在所述开口之内的第一电极；
    位于所述开口之内且与所述第一电极电连接的发光部；
    位于所述像素定义层的所述挡墙上的辅助电极；
    位于所述第一电极与所述辅助电极之间的绝缘部；以及
    覆盖所述辅助电极和所述发光部的第二电极。
  2. 根据权利要求1所述的显示基板，其中所述绝缘部部分地覆盖所述第一电极和所述辅助电极中的至少一个。
  3. 根据权利要求2所述的显示基板，其中所述绝缘部覆盖以下中的至少一个：
    所述辅助电极的背离所述平坦化层的表面的边缘部分；以及
    所述第一电极的背离所述平坦化层的表面的边缘部分。
  4. 根据权利要求2所述的显示基板，其中所述绝缘部部分地覆盖所述辅助电极，并且覆盖所述辅助电极的所述绝缘部的部分在垂直于所述平坦化层的方向上的最大厚度介于
    Figure PCTCN2020092699-appb-100001
    至
    Figure PCTCN2020092699-appb-100002
    之间。
  5. 根据权利要求1所述的显示基板，其中所述发光部包括由前驱体材料形成的功能层，所述挡墙包括单个层结构，并且所述绝缘部针对所述前驱体材料的疏水性强于所述单个层结构针对所述前驱体材料的疏水性。
  6. 根据权利要求1所述的显示基板，其中所述发光部包括由前驱体材料形成的功能层，所述挡墙包括多个层结构的叠层，并且所述绝缘部针对所述前驱体材料的疏水性强于所多个层结构中针对所述前驱体材料的疏水性最弱的层结构的针对所述前驱体材料的疏水性。
  7. 根据权利要求1所述的显示基板，其中所述绝缘部覆盖所述挡墙的侧壁。
  8. 根据权利要求6或者7所述的显示基板，其中所述功能层包括空穴注入层、空穴传输层、发光材料层、电子注入层、电子传输层。
  9. 根据权利要求7所述的显示基板，其中所述侧壁与所述平坦化层的上表面成锐角。
  10. 根据权利要求1所述的显示基板，其中所述绝缘部的材料包括水氧阻隔材料。
  11. 根据权利要求1所述的显示基板，还包括衬底基板以及在所述衬底基板上上的多个器件，其中所述平坦化层在具有所述多个器件的衬底基板上。
  12. 一种显示装置，包括根据权利要求1-11中的任一项所述的显示基板。
  13. 一种制作显示基板的方法，包括：
    形成平坦化层；
    在所述平坦化层上形成像素定义层，其中所述像素定义层包括开口和围绕所述开口的挡墙；
    同时在所述像素定义层的挡墙上形成辅助电极并在所述平坦化层的对应于所述开口的部分上形成第一电极；
    在所述辅助电极和所述第一电极之间形成绝缘部，其中所述绝缘部使所述辅助电极与所述第一电极电绝缘；
    在所述第一电极上形成发光部；以及
    在所述辅助电极和所述发光部上形成第二电极。
  14. 根据权利要求13所述的方法，其中：
    同时在所述像素定义层的挡墙上形成辅助电极并在所述平坦化层的对应于所述开口的部分上形成第一电极包括：
    在一个构图工艺中同时形成第一电极叠层和辅助电极叠层，其中所述辅助电极叠层包括所述辅助电极和位于所述辅助电极背离所述平坦化层一侧的光刻胶，并且所述第一电极叠层包括所述第一电极和位于所述第一电极背离所述平坦化层一侧的光刻胶；以及
    在所述辅助电极和所述第一电极之间形成绝缘部包括：
    对位于所述辅助电极背离所述平坦化层一侧的光刻胶和位于所述第一电极背离所述平坦化层一侧的光刻胶进行部分灰化，以暴露所述辅助电极的边缘区域和所述第一电极的边缘区域；
    沉积绝缘材料层；以及
    剥离所述辅助电极上的未灰化光刻胶和所述第一电极上的未灰化光刻胶，使得所剥离的未灰化光刻胶上的绝缘材料被移除，且未被移除的绝缘材料形成所述绝缘部。
  15. 根据权利要求14所述的方法，其中在一个构图工艺中同时形成第一电极叠层和辅助电极叠层包括：
    在所述像素定义层的挡墙和所述平坦化层的对应于所述开口的部分上沉积电极材料层；
    在所述电极材料层上涂覆光刻胶层；
    对所述电极材料层上的所述光刻胶层进行曝光和显影，以暴露所述电极材料层的一部分；以及
    刻蚀所暴露的所述电极材料层的所述部分，以得到所述第一电极叠层和所述辅助电极叠层。
  16. 根据权利要求13所述的方法，还包括：
    在形成所述平坦化层之前，提供衬底基板以及在所述衬底基板上形成多个器件，其中所述平坦化层形成在形成有所述多个器件的衬底基板上。
  17. 根据权利要求13所述的方法，其中所述发光部包括由前驱体材料形成的功能层，所述挡墙包括单个层结构，并且所述绝缘部针对所述前驱体材料的疏水性强于所述单个层结构针对所述前驱体材料的疏水性。
  18. 根据权利要求13所述的方法，其中所述发光部包括由前驱体材料形成的功能层，所述挡墙包括多个层结构的叠层，并且所述绝缘部针对所述前驱体材料的疏水性强于所多个层结构中针对所述前驱体材料的疏水性最弱的层结构的针对所述前驱体材料的疏水性。
  19. 根据权利要求17或者18所述的方法，其中所述功能层包括空穴注入层、空穴传输层、发光材料层、电子注入层、电子传输层。
  20. 根据权利要求13所述的方法，其中所述绝缘部的材料包括水氧阻隔材料。
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