WO2020253215A1 - 硅片吸附装置及激光退火设备 - Google Patents

硅片吸附装置及激光退火设备 Download PDF

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WO2020253215A1
WO2020253215A1 PCT/CN2019/130298 CN2019130298W WO2020253215A1 WO 2020253215 A1 WO2020253215 A1 WO 2020253215A1 CN 2019130298 W CN2019130298 W CN 2019130298W WO 2020253215 A1 WO2020253215 A1 WO 2020253215A1
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silicon wafer
area
adsorption device
adsorption
identification
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PCT/CN2019/130298
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English (en)
French (fr)
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冒鹏飞
蔡晨
张德峰
杨博光
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上海微电子装备（集团）股份有限公司
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Publication of WO2020253215A1 publication Critical patent/WO2020253215A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • This application relates to the field of integrated circuit manufacturing, such as a silicon wafer adsorption device and laser annealing equipment.
  • the suction cups of the laser annealing equipment in the related technology are made of silicon carbide.
  • the color of the silicon carbide suction cups is the same as the color of the silicon wafer (mostly color, mainly black), making it difficult for the detection device to distinguish between the silicon wafer and the suction cup ,
  • the position of the silicon wafer and the suction cup cannot be distinguished, and the edge extraction accuracy of the silicon wafer is low, which results in a low success rate of silicon wafer alignment. It requires repeated adjustment and calibration.
  • the alignment efficiency of the silicon wafer and the suction cup is low, which affects the productivity of laser annealing equipment.
  • This application proposes a silicon wafer adsorption device, which can improve the accuracy and efficiency of the edge extraction of the silicon wafer, and the silicon wafer and the suction cup have high alignment efficiency, which is beneficial to increase the productivity of laser annealing equipment.
  • This application proposes a laser annealing equipment, which can improve the efficiency of the alignment between the silicon wafer and the chuck, and the equipment has high productivity.
  • An embodiment provides a silicon wafer adsorption device, which includes:
  • the marking difference piece is arranged on the outer periphery of the adsorption surface and is arranged to form a marking area;
  • the adsorption surface includes an adsorption area
  • the adsorption area can adsorb and fix the silicon wafer
  • the identification area is arranged adjacent to the adsorption area
  • the silicon wafer is arranged to be adsorbed and fixed by the adsorption area.
  • the edge of the silicon wafer is made to fall at least partially within the marking area, and the marking area and the silicon wafer have different machine recognition degrees.
  • An embodiment provides a laser annealing equipment including the above-mentioned silicon wafer adsorption device.
  • the above-mentioned silicon wafer adsorption device includes a marking difference piece, and is set to form a marking area.
  • the marking area is arranged adjacent to the adsorption area, and the marking area and the silicon wafer have different machine recognition degrees. After the silicon wafer is adsorbed and fixed by the adsorption area, the silicon wafer The edge of the wafer at least partially falls into the marking area. Because the marking area and the silicon wafer have different machine recognition degrees, the detection device can quickly and accurately identify the edge of the silicon wafer, which can effectively improve the accuracy and efficiency of the edge extraction of the silicon wafer, thereby improving The efficiency of aligning the silicon wafer with the suction cup improves the productivity of laser annealing equipment.
  • the above-mentioned laser annealing equipment adopts the above-mentioned silicon wafer adsorption device, the silicon wafer and the suction cup are aligned efficiently, and the equipment productivity is high.
  • Fig. 1 is a schematic structural diagram of a silicon wafer adsorption device in an embodiment
  • Figure 2 is a structural cross-sectional view of a silicon wafer adsorption device in an embodiment
  • Fig. 3 is a schematic diagram of the structure of an identification ring in an embodiment.
  • the silicon wafer adsorption device of an embodiment has an adsorption surface capable of adsorbing silicon wafers, and also includes an identification difference piece (for example, the identification ring 122 shown in FIG. 2), and the identification difference piece is arranged in the It is arranged on the outer periphery of the suction surface to form a marking area 12.
  • an identification difference piece for example, the identification ring 122 shown in FIG. 2
  • the identification difference piece is arranged in the It is arranged on the outer periphery of the suction surface to form a marking area 12.
  • the adsorption surface includes an adsorption area 11, the adsorption area 11 is configured to adsorb and fix the silicon wafer, the marking area 12 is arranged adjacent to the adsorption area 11, after the silicon wafer is adsorbed and fixed by the adsorption area 11, the edge of the silicon wafer at least partially falls into the marking area Within 12, the marking area 12 and the silicon wafer have different machine recognition degrees.
  • the detection device can quickly and accurately identify the edge of the silicon wafer, which can effectively improve the accuracy and efficiency of the edge extraction of the silicon wafer, thereby improving the quality of the silicon wafer
  • the chuck alignment efficiency improves the productivity of laser annealing equipment.
  • the machine recognition degree may refer to the machine vision recognition degree.
  • different machine recognition degrees include light reflectance difference recognition, and the identification area 12 and the silicon chip provide different machine recognition degrees through the light reflectance difference.
  • the light reflectivity of the marking area 12 is different from that of the silicon wafer. After the silicon wafer is adsorbed and fixed, a different light reflection difference will be formed between the edge of the silicon wafer and the marking area 12, which is convenient for the detection device to identify, and the detection device can quickly , Accurately identify the edge of the silicon wafer.
  • the reflectance of the marking area 12 to light is at least 40% or more.
  • the light reflectance of the marking area 12 may be 45%, 50%, 55%, 60%, 65%, 70%, 75%. %, 80%, 85%, 90%, 95% or 100%.
  • the light reflectivity of the marking region 12 is for light with a wavelength of 400 nm to 800 nm, and for example, it can be for light with a wavelength of 450 nm to 550 nm.
  • the different machine recognition degrees include color difference recognition, and the color difference between the marking area 12 and the silicon chip provides different machine recognition degrees.
  • the color of the marking area 12 is different from the color of the silicon wafer.
  • the marking area 12 is made of a material with a different color from the silicon wafer, so that there is a clear color difference between the marking area 12 and the silicon wafer for identification by the detection device.
  • the silicon wafer is adsorbed and fixed Then, a color difference is formed between the edge of the silicon wafer and the marking area 12, and the detection device can quickly and accurately identify the edge of the silicon wafer.
  • the color of the identification area 12 is white, gold, silver or yellow.
  • different machine recognition degrees are provided by light reflectance differences or color differences, and the light reflectance or color of the marking area 12 and the silicon wafer are different to form different machine recognition degrees.
  • the machine recognition degree may also include color and light reflectance at the same time, and at the same time, different machine recognition degrees are provided through the difference of light reflectance and color difference, and the light reflectance and color of the marking area 12 and the silicon chip are different.
  • the above difference in machine recognition degree only includes different colors or different light reflectance is only an embodiment, and is not specifically limited.
  • the marking area 12 may be made of a metal material with a low coefficient of thermal expansion, which can effectively provide machine contrast and also has good durability.
  • the marking area 12 is made of at least one of ceramic steel oxide, mold steel, and zirconia.
  • the marking area 12 is annular, and the annular marking area 12 is provided with at least one notch 121 along the radial direction.
  • the gap 121 can compensate for the expansion deformation when the marking area 12 is thermally expanded to avoid interference between the marking area 12 and the adsorption area 11 caused by the temperature increase during the laser annealing process, improve the reliability of the silicon wafer adsorption device, and improve the pair of silicon wafers. Accurate accuracy.
  • the width of the notch 121 is 0.2 mm-3 mm. In one embodiment, the width of the notch 121 is changed in increments of fixed numerical intervals between 0.2 mm and 3 mm. For example, in one embodiment, the width of the notch 121 is changed in increments of 0.05 mm, and the width of the notch 121 is Any value between 0.2mm, 0.25mm, 0.3mm... 3mm, in other embodiments, the width of the notch 121 can also be incremented by 0.1mm, 0.2mm or other numerical values, which is not specifically limited in this embodiment . In one embodiment, the width of the notch 121 is 1 mm.
  • the silicon wafer adsorption device further includes a base 20.
  • the annular identification area 12 is formed by an identification ring 122.
  • the base 20 is provided with an annular installation area, the identification ring 122 Set in the ring-shaped installation area.
  • the identification difference piece is an identification ring 122, and the identification ring 122 is provided on the outer periphery of the adsorption surface of the silicon wafer adsorption device to form an annular identification area 12.
  • the suction area 11 includes a suction cup, which can be, but is not limited to, a microporous suction cup. The suction cup is arranged on the base 20.
  • the annular installation area on the base 20 is an annular installation groove surrounding the outside of the suction cup.
  • the identification ring 122 is arranged in the installation groove. And it is arranged around the outer ring of the suction cup.
  • the silicon wafer adsorption device has a simple structure and is convenient to install. When the silicon wafer adsorption device is installed, after the suction cup is fixedly installed on the base 20, the identification ring 122 is installed in the installation groove and the identification ring 122 is fixed to the base 20.
  • the identification difference piece is the identification ring 122.
  • the identification difference piece may also be a plurality of identification blocks, and the plurality of identification blocks are arranged at intervals along the circumferential direction on the outer periphery of the adsorption surface of the silicon wafer adsorption device to form an annular identification area 12, for example, the identification blocks may Any shape such as circle, ellipse, quadrilateral, polygon, sector or heterogeneous structure.
  • the identification ring 122 is fixed in the installation area by gluing, and the identification ring 122 is adhesively connected to the base 20 to ensure stable and reliable installation of the identification ring 122.
  • the identification ring 122 may also be fixed in the installation area by a mechanical fixing method, such as bolting, clamping, or riveting.
  • the marking area 12 After the silicon wafer is adsorbed and fixed by the adsorption area 11, from the machine vision direction, at least three edge points of the edge of the silicon wafer fall into the marking area 12.
  • the three edge points refer to three edge points that can be distinguished by machine vision.
  • the identification area 12 may be at least one triangle, quadrilateral, polygon, circle, ellipse, or a segment of circular ring, or other special-shaped structures. To ensure the accuracy of the edge extraction of the silicon wafer, the marking area 12 needs to cover the edge of the silicon wafer as evenly as possible.
  • the marking area 12 covers at least three edge points of the silicon wafer. After the silicon wafer is adsorbed and fixed by the adsorption area 11, at least three edge points of the edge of the silicon wafer fall into the marking area 12 and pass through at least three edge points. The center of the silicon wafer can be determined, and then the edge of the wafer can be determined.
  • the marking area 12 can cover at least three edge points of the silicon wafer after installation, and there is no need to perform complicated concentric alignment operations between the marking ring 122 and the suction cup, which can ensure The edge extraction accuracy of the silicon wafer also helps to improve the installation efficiency of the silicon wafer adsorption device.
  • the upper direction of the silicon wafer is 0°
  • the edge of the silicon wafer is located at the edge points of 0°, 90°, 180° and 270° or the edge of the silicon wafer
  • the edge points located at 45°, 135°, 225° and 315° fall within the marking area 12.
  • silicon wafers are loaded at 0° or 45°.
  • the marking area 12 is set at the position where the four silicon wafer edge points are set at 90° intervals after the silicon wafer is adsorbed and fixed in the upper wafer direction as the reference point.
  • the marking area 12 covers four edge points distributed in a cross shape, which can conveniently and quickly determine the center position of the silicon wafer, and ensure the efficiency and accuracy of the edge extraction of the silicon wafer.
  • the marking area 12 can also be set to correspond to eight edge points at the same time, that is, after the silicon wafer is adsorbed and fixed by the adsorption area 11, the edges of the silicon wafer are located at the edge points of 0°, 90°, 180°, and 270°.
  • the edge points of the silicon wafer at 45°, 135°, 225° and 315° fall into the marking area 12, so that the silicon wafer can be quickly and accurately carried out regardless of whether it is 0° or 45° loading.
  • the edge extraction operation is beneficial to improve the versatility of the silicon wafer adsorption device.
  • the positioning opening of the silicon wafer falls into the marking area 12.
  • the silicon wafer is provided with positioning openings. Therefore, the distribution of the marking area 12 needs to consider the edge recognition of the positioning opening.
  • the marking area 12 is provided at the position of the positioning opening after the silicon wafer is adsorbed and fixed, and the silicon wafer is adsorbed area 11 After being adsorbed and fixed, the positioning opening of the silicon wafer falls into the marking area 12, and the edge of the positioning opening can be accurately identified and extracted to ensure the edge extraction accuracy of the silicon wafer.
  • the surface height of the marking area 12 is the same as the surface height of the adsorption area 11.
  • the identification area 12 is formed by a plurality of identification rings 122 superimposed in the axial direction, and the plurality of identification rings 122 are superimposed and arranged in the axial direction, so that the number of identification rings 122 can be increased or decreased according to the thickness of the suction cup to
  • the thickness of the marking area 12 is the same as the thickness of the suction cup, and there is no need to make multiple identification rings 122 with different thickness specifications.
  • By increasing or decreasing the number of the marking rings 122 it can be adapted to suction cups with different thickness sizes, which is beneficial to cost saving.
  • the multiple identification rings 122 are adhesively connected to ensure a stable and reliable connection between the multiple identification rings 122 stacked in the axial direction.
  • the plurality of identification rings 122 may also be connected and fixed by bolt fastening or snap connection, which is not specifically limited in this embodiment.
  • the radial width of the identification area 12 is not unique.
  • the radial width of the marking area 12 may vary with the laser scanning path, the width of the marking area 12 located in the laser scanning path area is smaller than the width of the marking area located in the non-laser scanning path area, and the marking located in the laser scanning path area
  • the width of the area 12 is relatively narrow, so that a gap is formed between the marking area 12 and the adsorption area 11 located in the laser scanning path area, so as to avoid the expansion and deformation of the marking area 12 due to the temperature increase and the diameter of the adsorption area 11 during the laser scanning process. To interference.
  • the silicon wafer When the above-mentioned silicon wafer adsorption device is working, the silicon wafer is placed on the suction cup by a robot, and the vacuum passes through the vent hole on the base 20 and passes through the micropores on the suction cup to adsorb the silicon wafer on the suction cup, and the whole machine performs pre-alignment Since the identification ring 122 and the silicon chip have obvious color difference, it is convenient to identify the edge of the silicon chip. After the silicon chip and the suction cup are quickly and accurately aligned, the whole machine is laser annealed.
  • the heat generated during laser annealing will cause the identification ring 122 to expand and deform, and the gap 121 compensates for the expansion and deformation of the identification ring 122 to prevent the identification ring 122 from interfering with the suction cup and the base 20 due to the expansion and deformation.
  • the application also provides a laser annealing equipment, including the above-mentioned silicon wafer adsorption device.
  • the laser annealing equipment of this embodiment has the beneficial effects of high aligning efficiency between the silicon wafer and the suction cup and high equipment productivity by applying the above-mentioned silicon wafer adsorption device.

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Abstract

一种硅片吸附装置及激光退火设备，所述硅片吸附装置包括：能够吸附硅片的吸附面；标识差异件，所述标识差异件设置在所述吸附面的外周边上，且设置为形成标识区域；其中，所述吸附面包括吸附区域，所述吸附区域能够吸附固定所述硅片，所述标识区域与所述吸附区域相邻设置，所述硅片设置为被所述吸附区域吸附固定情况下，使所述硅片的边缘至少部分落入所述标识区域内，所述标识区域与所述硅片具有不同的机器识别度。

Description

硅片吸附装置及激光退火设备
本申请要求申请日为2019年6月21日、申请号为201910543485.1的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请涉及集成电路制造领域，例如涉及一种硅片吸附装置及激光退火设备。
背景技术
在激光退火工艺中，需要对硅片的边缘进行准确地识别，以确保激光退火工艺精度。相关技术中的激光退火设备的吸盘均为碳化硅材质，碳化硅吸盘的颜色与硅片的颜色(多为生色，以黑色为主)相同，使得探测装置很难对硅片和吸盘进行区分，无法辨别硅片和吸盘的位置，硅片边缘提取精度低，导致硅片对准成功率较低，需要反复多次调试校准，硅片与吸盘对准效率低，影响激光退火设备产能。
发明内容
本申请提出了一种硅片吸附装置，能够提高硅片边缘提取精度及效率，硅片与吸盘对准效率高，有利于提高激光退火设备产能。
本申请提出了一种激光退火设备，能够提高硅片与吸盘对准效率，设备产能高。
一实施例提供一种硅片吸附装置，该硅片吸附装置包括：
能够吸附硅片的吸附面；
标识差异件，所述标识差异件设置在所述吸附面的外周边上，且设置为形成标识区域；
其中，所述吸附面包括吸附区域，所述吸附区域能够吸附固定所述硅片，所述标识区域与所述吸附区域相邻设置，所述硅片设置为在被所述吸附区域吸附固定的情况下，使所述硅片的边缘至少部分落入所述标识区域内，所述标识区域与所述硅片具有不同的机器识别度。
一实施例提供一种激光退火设备，包括上述硅片吸附装置。
上述的硅片吸附装置包括标识差异件，且设置为形成标识区域，标识区域与吸附区域相邻设置，且标识区域与硅片具有不同的机器识别度，硅片被吸附区域吸附固定后，硅片的边缘至少部分落入标识区域内，由于标识区域与硅片的机器识别度不同，从而使得探测装置可以快速、准确地识别硅片边缘，能够有效提高硅片边缘提取精度及效率，进而提高硅片与吸盘对准效率，提高激光退火设备产能。
上述的激光退火设备通过应用上述硅片吸附装置，硅片与吸盘对准效率高，设备产能高。
附图说明
图1是一个实施例中硅片吸附装置的结构示意图；
图2是一个实施例中硅片吸附装置的结构剖视图；
图3是一个实施例中标识环的结构示意图。
图中：
11-吸附区域，12-标识区域，121-缺口，122-标识环，20-基座。
具体实施方式
在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
请同时参阅图1至图3，一实施例的硅片吸附装置具有能够吸附硅片的吸附面，还包括标识差异件(例如图2所示的标识环122)，标识差异件设置在所述吸附面的外周边上，且设置为形成标识区域12。吸附面包括吸附区域11，吸附区域11被配置为能够吸附固定硅片，标识区域12与吸附区域11相邻设置，硅片被吸附区域11吸附固定后，硅片的边缘至少部分落入标识区域12内，标识区域12与硅片具有不同的机器识别度。
上述的硅片吸附装置，由于标识区域12与硅片的机器识别度不同，从而使得探测装置可以快速、准确地识别硅片边缘，能够有效提高硅片边缘提取精度及效率，进而提高硅片与吸盘对准效率，提高激光退火设备产能。示例性地， 在该方案中，所述机器识别度可以指的是机器视觉识别度。
在一个实施例中，不同的机器识别度包括光反射率差异识别，标识区域12与硅片之间通过光反射率差异提供不同的机器识别度。标识区域12的光反射率与硅片的光反射率不同，硅片被吸附固定后在硅片边缘和标识区域12之间会形成不同的光反射差异，便于探测装置进行识别，探测装置能够快速、准确地识别硅片边缘。在一个实施例中，标识区域12对光的反射率至少在40％以上，例如，标识区域12的光反射率可以是45％、50％、55％、60％、65％、70％、75％、80％、85％、90％、95％或100％。在一个实施例中，标识区域12的光反射率针对的是波长为400nm-800nm的光，示例性地，可以针对波长为450nm-550nm的光。
在又一个实施例中，不同的机器识别度包括颜色差异识别，标识区域12与硅片之间通过颜色差异提供不同的机器识别度。标识区域12的颜色与硅片的颜色不同，标识区域12采用与硅片不同颜色的材料制成，使标识区域12与硅片之间具有明显的色差便于探测装置进行识别，硅片被吸附固定后在硅片边缘和标识区域12之间形成色差，探测装置能够快速、准确地识别硅片边缘。在一个实施例中，标识区域12的颜色为白色、金色、银色或黄色。
上述实施例中，通过光反射率差异或颜色差异提供不同的机器识别度，标识区域12与硅片的光反射率不同或颜色不同以形成不同的机器识别度。然而，在其它实施例中，机器识别度还可以同时包括颜色和光反射率，同时通过光反射率差异和颜色差异提供不同的机器识别度，标识区域12与硅片的光反射率和颜色均不同，以增强机器识别度，确保硅片边缘的提取精度及效率，以上机器识别度不同仅包括颜色不同或光反射率不同仅是一个实施例，并不做具体限定。示例性地，标识区域12可采用热膨胀系数低的金属材料制成，在能够有效提供机器对比度的同时，还具有良好的耐用性。在一个实施例中，标识区域12采用陶瓷氧化钢、模具钢和氧化锆中的至少一种制成。
在一个实施例中，标识区域12呈环形，环形的标识区域12上沿径向开设有至少一个缺口121。缺口121能够在标识区域12受热膨胀时进行膨胀形变补偿，以避免激光退火过程中温度升高导致标识区域12与吸附区域11之间造成干涉，提升硅片吸附装置的可靠性，提升硅片对准的准确性。
在一个实施例中，缺口121的宽度为0.2mm-3mm。在一个实施例中，缺口121的宽度在0.2mm-3mm之间以固定数值间隔递增变化取值，如在一个实施例中，缺口121的宽度以0.05mm递增变化取值，缺口121的宽度为0.2mm、0.25mm、0.3mm… 3mm之间的任意值，在其它实施例中，缺口121的宽度还可以以0.1mm、0.2mm或其它数值递增变化取值，本实施例并不做具体限定。在一个实施例中，缺口121的宽度为1mm。
在一个实施例中，如图2和图3所示，硅片吸附装置还包括基座20，环形的标识区域12由标识环122形成，基座20上设置有环形的安装区，标识环122设置在环形的安装区内。示例性地，标识差异件为标识环122，标识环122设置在硅片吸附装置的吸附面的外周边上形成环形的标识区域12。吸附区域11包括吸盘，吸盘可以但不局限为微孔吸盘，吸盘设置在基座20上，基座20上的环形安装区为围绕在吸盘外侧的环形安装槽，标识环122设置在安装槽内且围设在吸盘外圈。该硅片吸附装置结构简单，安装方便。硅片吸附装置安装时，将吸盘固定安装在基座20上之后，将标识环122安装在安装槽内并将标识环122与基座20固定即可。
本实施例中，标识差异件为标识环122。在其它实施例中，标识差异件还可以为多个标识块，多个标识块沿周向间隔设置在硅片吸附装置的吸附面的外周边上形成环形的标识区域12，例如，标识块可以为圆形、椭圆形、四边形、多边形、扇形或异性结构等任意形状。
在一个实施例中，标识环122通过胶粘固定在安装区内，标识环122与基座20粘接连接，以确保标识环122安装稳定可靠。在其它实施例中，标识环122还可以通过机械固定方式，如螺栓紧固、卡接或铆接等固定方式固定在安装区内。
在一个实施例中，硅片被吸附区域11吸附固定后，从机器视觉方向看，硅片的边缘至少有三个边缘点落入标识区域12内。该三个边缘点指机器视觉可分辨的三个边缘点。示例性地，标识区域12可以是至少一个三角形、四边形、多边形、圆形、椭圆形或一段圆环，也可以是其他异形结构。为确保硅片边缘提取精度，标识区域12需要尽可能均匀的涵盖硅片边缘。硅片吸附装置组装过程中，若能够确保标识环122与吸盘同心设置即可保证硅片被吸附固定后边缘都落在标识区域12内。然而，标识环122与吸盘同心对准操作复杂，影响安装效率。本实施例中，标识区域12涵盖硅片的至少三个边缘点，硅片被吸附区域11吸附固定后，硅片的边缘至少有三个边缘点落入标识区域12内，通过至少三个边缘点即可确定硅片的圆心，进而即可确定硅片边缘。本实施例中，硅片吸附装置组装过程中只要保证标识区域12安装后能够涵盖硅片的至少三个边缘点即可，无需进行复杂的标识环122与吸盘的同心对准操作，既能够保证硅片边缘提取精 度，又有助于提高硅片吸附装置的安装效率。
在一个实施例中，硅片的上片方向为0°，硅片被吸附区域11吸附固定后，硅片的边缘位于0°、90°、180°和270°的边缘点或硅片的边缘位于45°、135°、225°和315°的边缘点落入标识区域12内。例如，硅片以0°或45°上片，本实施例中，标识区域12设置在硅片被吸附固定后以上片方向为基准点，间隔90°设置的四个硅片边缘点所在的位置，标识区域12涵盖四个呈十字形分布的边缘点，能够方便快速确定硅片的圆心位置，确保硅片边缘提取效率及精度。
在一个实施例中，还可以设置标识区域12同时对应八个边缘点，即硅片被吸附区域11吸附固定后，硅片的边缘位于0°、90°、180°和270°的边缘点和硅片的边缘位于45°、135°、225°和315°的边缘点均落入标识区域12内，从而可以实现无论是0°上片还是45°上片均可以快速、准确地进行硅片边缘提取操作，有利于提高硅片吸附装置的通用性。
在一个实施例中，硅片被吸附区域11吸附固定后，硅片的定位口落入标识区域12内。硅片上设置有定位口，因此，标识区域12的分布需要考虑定位口边缘识别，本实施例中，于硅片被吸附固定后定位口所在的位置设置标识区域12，硅片被吸附区域11吸附固定后，硅片的定位口落入标识区域12内，能够对定位口边缘进行准确识别提取，确保硅片边缘提取精度。
在一个实施例中，为确保对准精度及硅片吸附稳定性，标识区域12的表面高度与吸附区域11的表面高度相同。
在一个实施例中，标识区域12由多个沿轴向叠加设置的标识环122形成，多个标识环122沿轴向叠加设置，从而可以根据吸盘的厚度增加或减少标识环122的数量，以使标识区域12的厚度与吸盘的厚度相同，且无需制作多种不同厚度规格的标识环122，通过增减标识环122的数量即可与不同厚度尺寸的吸盘相适配，有利于节约成本。
在一个实施例中，多个标识环122之间粘接连接，以确保沿轴向叠加的多个标识环122之间连接稳定可靠。在其它实施例中，多个标识环122之间还可以通过螺栓紧固或卡接等方式进行连接固定，本实施例并不做具体限定。
在一个实施例中，标识区域12的径向宽度不唯一。例如，标识区域12的径向宽度可随激光扫描路径变化，位于激光扫描路径区域内的标识区域12的宽度小于位于非激光扫描路径区域内的标记区域的宽度，位于激光扫描路径区域内 的标识区域12的宽度较窄，使位于激光扫描路径区域内的标识区域12与吸附区域11之间形成间隙，从而可以避免在激光扫描过程中标识区域12温度升高发生膨胀变形与吸附区域11发生径向干涉。
上述的硅片吸附装置工作时，通过机械手将硅片放置在吸盘上，真空通过基座20上的通气孔穿过吸盘上面的微孔将硅片吸附在吸盘上后，整机进行预对准，由于标识环122与硅片具有明显的色差，便于进行硅片边缘的识别，硅片与吸盘快速准确对准后整机进行激光退火。激光退火时产生的热会使标识环122发生膨胀变形，缺口121对标识环122的膨胀变形进行补偿，避免标识环122因膨胀变形与吸盘及基座20发生干涉。
本申请还提供一种激光退火设备，包括上述的硅片吸附装置。本实施例的激光退火设备通过应用上述硅片吸附装置具有硅片与吸盘对准效率高，设备产能高的有益效果。
以上所述实施例的多个技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的多个技术特征所有可能的组合都进行描述。

Claims (17)

  1. 一种硅片吸附装置，包括：
    能够吸附硅片的吸附面；
    标识差异件，所述标识差异件设置在所述吸附面的外周边上，且设置为形成标识区域(12)；
    其中，所述吸附面包括吸附区域(11)，所述吸附区域(11)能够吸附固定所述硅片，所述标识区域(12)与所述吸附区域(11)相邻设置，所述硅片设置为在被所述吸附区域(11)吸附固定的情况下，使所述硅片的边缘至少部分落入所述标识区域(12)内，所述标识区域(12)与所述硅片具有不同的机器识别度。
  2. 根据权利要求1所述的硅片吸附装置，其中，不同的所述机器识别度包括颜色差异识别和光反射率差异识别中的至少一种；所述标识区域(12)的颜色与所述硅片的颜色不同，或，所述标识区域(12)的光反射率与所述硅片的光反射率不同，或者所述标识区域(12)的颜色和光反射率与所述硅片的颜色和光反射率都不同。
  3. 根据权利要求2所述的硅片吸附装置，其中，所述标识区域(12)的颜色为白色、金色、银色或黄色。
  4. 根据权利要求2所述的硅片吸附装置，其中，所述标识区域(12)对波长为400nm-800nm的光的反射率达到40％以上。
  5. 根据权利要求2所述的硅片吸附装置，其中，所述标识区域(12)采用陶瓷氧化钢、模具钢和氧化锆中的至少一种制成。
  6. 根据权利要求1至5任一项所述的硅片吸附装置，其中，所述标识区域(12)呈环形，环形的所述标识区域(12)上沿径向开设有至少一个缺口(121)。
  7. 根据权利要求6所述的硅片吸附装置，其中，所述缺口(121)的宽度为0.2mm-3mm。
  8. 根据权利要求6所述的硅片吸附装置，还包括基座(20)，其中，所述标识差异件为标识环(122)，环形的所述标识区域(12)由所述标识环(122)形成，所述基座(20)上设置有环形的安装区，所述标识环(122)设置在环形的所述安装区内。
  9. 根据权利要求8所述的硅片吸附装置，其中，所述标识环(122)通过胶粘或机械固定方式固定在所述安装区内。
  10. 根据权利要求1至5任一项所述的硅片吸附装置，其中，所述硅片设置为 被所述吸附区域(11)吸附固定的情况下，使所述硅片至少有三个边缘点落入所述标识区域(12)内。
  11. 根据权利要求1至5任一项所述的硅片吸附装置，其中，所述硅片的上片方向为0°，所述硅片设置为被所述吸附区域(11)吸附固定的情况下，使所述硅片位于0°、90°、180°和270°的边缘点或位于45°、135°、225°和315°的边缘点落入所述标识区域(12)内，或者使所述硅片位于0°、90°、180°和270°的边缘点和位于45°、135°、225°和315°的边缘点均落入所述标识区域(12)内。
  12. 根据权利要求1至5任一项所述的硅片吸附装置，其中，所述硅片上设有定位口，所述定位口设置为在所述硅片被所述吸附区域(11)吸附固定的情况下，落入所述标识区域(12)内。
  13. 根据权利要求1至5任一项所述的硅片吸附装置，其中，所述标识区域(12)的表面高度与所述吸附区域(11)的表面高度相同。
  14. 根据权利要求13所述的硅片吸附装置，其中，所述标识区域(12)由多个沿轴向叠加设置的标识环(122)形成。
  15. 根据权利要求14所述的硅片吸附装置，其中，所述多个标识环(122)之间粘接连接。
  16. 根据权利要求1至5任一项所述的硅片吸附装置，其中，所述标识区域(12)与所述吸附区域(11)沿径向不发生干涉。
  17. 一种激光退火设备，包括如权利要求1至16任一项所述的硅片吸附装置。
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