WO2020248428A1 - 柔性触控显示屏及其显示装置 - Google Patents

柔性触控显示屏及其显示装置 Download PDF

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Publication number
WO2020248428A1
WO2020248428A1 PCT/CN2019/107325 CN2019107325W WO2020248428A1 WO 2020248428 A1 WO2020248428 A1 WO 2020248428A1 CN 2019107325 W CN2019107325 W CN 2019107325W WO 2020248428 A1 WO2020248428 A1 WO 2020248428A1
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Prior art keywords
layer
sensing electrodes
organic
encapsulation layer
inorganic
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PCT/CN2019/107325
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English (en)
French (fr)
Inventor
金江江
Original Assignee
武汉华星光电半导体显示技术有限公司
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Priority to US16/625,198 priority Critical patent/US11430837B2/en
Publication of WO2020248428A1 publication Critical patent/WO2020248428A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED

Definitions

  • the invention relates to the field of display manufacturing, in particular to a flexible touch display screen and a display device thereof.
  • OLED Organic light-emitting diode display
  • OLED touch film basically adopts the bonding process and is separately manufactured, it not only increases the complexity of the process but also has a higher thickness.
  • OLED touch film that directly manufactures the touch layer in the OLED manufacturing process, which not only reduces the production cost, but also makes it easier to realize dynamic bending OLED touch film products.
  • the touch electrodes in the above-mentioned OLED touch film products are far from the light emitting layer, and the line width of the touch sensing electrodes cannot be made too high, otherwise it will cause problems of poor light transmittance and reduced luminous efficiency.
  • the OLED touch film basically adopts the bonding process and is separately manufactured, it not only increases the complexity of the process but also has a higher thickness.
  • an OLED touch film that directly manufactures the touch layer in the OLED manufacturing process, which not only reduces the production cost, but also makes it easier to realize dynamic bending OLED touch film products.
  • the touch electrodes in the above-mentioned OLED touch film products are far from the light emitting layer, and the line width of the touch sensing electrodes cannot be made too high, otherwise it will cause problems of poor light transmittance and reduced luminous efficiency.
  • the purpose of the present invention is to provide a flexible touch display screen and a display device thereof, which make each first sensing electrode and each second sensing electrode closer to the light-emitting part, improve the precision of touch manufacturing, and reduce the manufacturing of each sensing electrode Difficulty.
  • the present invention provides a flexible touch display screen, which includes a substrate, a light-emitting part, a first inorganic encapsulation layer, a first insulating layer, a plurality of first sensing electrodes, and a plurality of second sensing electrodes.
  • a light-emitting part is disposed on the substrate, and the light-emitting part includes a pixel defining layer and a plurality of pixels arranged in the pixel defining layer at intervals.
  • the first inorganic encapsulation layer is disposed on the light-emitting part.
  • the first insulating layer is disposed on the first inorganic encapsulation layer.
  • Each of the first sensing electrodes is arranged on the first insulating layer at intervals.
  • the second insulating layer is disposed on each of the first sensing electrodes.
  • a plurality of second sensing electrodes are arranged on the second insulating layer and corresponding to each of the first sensing electrodes, and the widths of each of the second sensing electrodes and each of the first sensing electrodes are less than or equal to the pixel limit The width of the bank of the layer, and the position where each second sensing electrode and each first sensing electrode expose each of the pixels.
  • it further includes an organic and inorganic composite layer, an organic encapsulation layer, and a second inorganic encapsulation layer.
  • the organic and inorganic composite layer is disposed between the first inorganic encapsulation layer and the first insulating layer, and the organic The encapsulation layer is disposed on each of the second sensing electrodes, and the second inorganic encapsulation layer is disposed on the organic encapsulation layer.
  • the organic material of the organic and inorganic composite layer is alumina (Al 2 O 3 ), titanium oxide (TiO 2 ) or zirconia (ZrO 2 ), and the inorganic material of the organic and inorganic composite layer is aluminum-based Polymer material (alucone), wherein the organic and inorganic composite layer is a multilayer alternating structure.
  • the material of the organic encapsulation layer is one or a combination of acrylic, epoxy, or silicone
  • the material of the second inorganic encapsulation layer is SiNx or SiONx
  • the second inorganic encapsulation layer is SiNx or SiONx.
  • the ratio of the number of atoms of silicon to nitrogen in the encapsulation layer is greater than 2 to 1 (Si:N>2:1).
  • the multilayer alternating structure includes the aluminum oxide (Al 2 O 3 ) and the aluminum-based polymer material (alucone) as a pair of alternating layers, and the aluminum oxide (Al 2 O 3 ) is the The bottommost layer of the multilayer alternating structure, the alternating layers are at least 3 pairs.
  • it further comprises a third inorganic encapsulation layer, the third inorganic encapsulation layer is disposed between the organic and inorganic composite layer and the first insulating layer, and the material of the third inorganic encapsulation layer is SiNx or SiONx , And the ratio of the number of atoms of silicon to nitrogen of the third inorganic encapsulation layer is greater than 2 to 1 (Si:N>2:1), and the material of each of the first sensing electrodes and each of the second sensing electrodes is molybdenum , Silver, titanium, copper, aluminum, molybdenum/aluminum/molybdenum or titanium/aluminum/titanium.
  • each of the first sensing electrodes is electrically connected through each of the first connecting portions and connected to the corresponding respective In the touch pad
  • each of the second sensing electrodes is electrically connected to each corresponding touch pad through each of the second connecting portions.
  • the materials of the first insulating layer and the second insulating layer are one or a combination of SiNx, SiONx, and SiOx, respectively.
  • the first insulating layer and the second insulating layer are made of silicon and nitrogen.
  • the atomic number ratio is greater than 1 to 1 (Si:N>1:1).
  • the base includes a substrate and a plurality of thin film transistors (TFTs) arranged on the substrate, and each of the thin film transistors drives the corresponding pixels to emit light.
  • TFTs thin film transistors
  • the present invention also provides a display device, including the flexible touch display screen described in the foregoing embodiment.
  • it further includes an organic and inorganic composite layer, an organic encapsulation layer, and a second inorganic encapsulation layer.
  • the organic and inorganic composite layer is disposed between the first inorganic encapsulation layer and the first insulating layer, and the organic The encapsulation layer is disposed on each of the second sensing electrodes, and the second inorganic encapsulation layer is disposed on the organic encapsulation layer.
  • the organic material of the organic and inorganic composite layer is alumina (Al 2 O 3 ), titanium oxide (TiO 2 ) or zirconia (ZrO 2 ), and the inorganic material of the organic and inorganic composite layer is aluminum-based Polymer material (alucone), wherein the organic and inorganic composite layer is a multilayer alternating structure.
  • the material of the organic encapsulation layer is one or a combination of acrylic, epoxy, or silicone
  • the material of the second inorganic encapsulation layer is SiNx or SiONx
  • the second inorganic encapsulation layer is SiNx or SiONx.
  • the ratio of the number of atoms of silicon to nitrogen in the encapsulation layer is greater than 2 to 1 (Si:N>2:1).
  • the multilayer alternating structure includes the aluminum oxide (Al 2 O 3 ) and the aluminum-based polymer material (alucone) as a pair of alternating layers, and the aluminum oxide (Al 2 O 3 ) is the The bottommost layer of the multilayer alternating structure, the alternating layers are at least 3 pairs.
  • it further comprises a third inorganic encapsulation layer, the third inorganic encapsulation layer is disposed between the organic and inorganic composite layer and the first insulating layer, and the material of the third inorganic encapsulation layer is SiNx or SiONx , And the ratio of the number of atoms of silicon to nitrogen of the third inorganic encapsulation layer is greater than 2 to 1 (Si:N>2:1), and the material of each of the first sensing electrodes and each of the second sensing electrodes is molybdenum , Silver, titanium, copper, aluminum, molybdenum/aluminum/molybdenum or titanium/aluminum/titanium.
  • each of the first sensing electrodes is electrically connected through each of the first connecting portions and connected to the corresponding respective In the touch pad
  • each of the second sensing electrodes is electrically connected to each corresponding touch pad through each of the second connecting portions.
  • the materials of the first insulating layer and the second insulating layer are one or a combination of SiNx, SiONx, and SiOx, respectively.
  • the first insulating layer and the second insulating layer are made of silicon and nitrogen.
  • the atomic number ratio is greater than 1 to 1 (Si:N>1:1).
  • the base includes a substrate and a plurality of thin film transistors (TFTs) arranged on the substrate, and each of the thin film transistors drives the corresponding pixels to emit light.
  • TFTs thin film transistors
  • the present invention also has the following effects.
  • the present invention uses a high-reliability and high-efficiency flexible touch display screen to directly fabricate each first sensing electrode and each second sensing electrode on each thin film packaging structure (touch-in-TFE).
  • each first sensing electrode and each second sensing electrode are closer to the light-emitting part in the vertical/longitudinal direction, so as to improve the precision of touch manufacturing.
  • increasing the line width W1 of each first sensing electrode and each second sensing electrode can reduce the difficulty of manufacturing each sensing electrode (that is, making it easier), reduce manufacturing costs, and reduce the optical interference of each sensing electrode , To achieve light penetration efficiency.
  • FIG. 1 is a cross-sectional view of a flexible touch screen and its display device according to an embodiment of the present invention
  • FIG. 2 is a schematic plan view of the touch structure of the flexible touch display screen and the display device of the embodiment of the present invention
  • FIG 3 is another cross-sectional view of the flexible touch display screen and the display device thereof according to the embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of the organic and inorganic composite layer of the embodiment of FIG. 3;
  • FIG 5 is another cross-sectional view of the flexible touch display screen and the display device thereof according to the embodiment of the present invention.
  • an embodiment of the present invention provides a flexible touch display screen 1, including a substrate 11, a light-emitting part 12, a first inorganic encapsulation layer 13, a first insulating layer 14, a plurality of first sensing electrodes 15, and A plurality of second sensing electrodes 17.
  • the light emitting part 12 is disposed on the substrate 11, and the light emitting part 12 includes a pixel defining layer 121 and a plurality of pixels 122 arranged in the pixel defining layer 121 at intervals.
  • each of the pixels 122 adopts organic materials to realize self-emissive display technology.
  • the pixels 122 are, for example, red (R), green (G), and blue (B). ) Etc. Therefore, the flexible touch display 1 of this embodiment is preferably a flexible touch organic light emitting diode (organic light emitting diode). diode, OLED) display screen.
  • the first inorganic encapsulation layer 13 is provided on the light-emitting part 12.
  • the first insulating layer 14 is disposed on the first inorganic encapsulation layer 13.
  • the first sensing electrodes 15 are arranged on the first insulating layer 14 at intervals.
  • the second insulating layer 16 is disposed on each of the first sensing electrodes 15.
  • a plurality of second sensing electrodes 17 are arranged on the second insulating layer 16 and corresponding to each of the first sensing electrodes 15.
  • the width W1 of each of the second sensing electrodes 17 and each of the first sensing electrodes 15 is smaller than the width W2 of the bank 123 of the pixel defining layer 121, and each of the second sensing electrodes 17 and each of the The first sensing electrode 15 exposes the position of each pixel 122, so that the light of each pixel 122 can penetrate each of the second sensing electrodes 17 and each of the first sensing electrodes 15, thereby increasing the light penetration efficiency.
  • the width W1 of each of the second sensing electrodes 17 and each of the first sensing electrodes 15 can also be equal to the width W2 of the bank 123 of the pixel defining layer 121, as required And change.
  • FIG. 2 also includes a plurality of first connecting portions 151, a plurality of second connecting portions 171 and a plurality of touch pads 22.
  • Each of the first sensing electrodes 15 is arranged in an array along the first direction Y, and is electrically connected by each first connecting portion 151.
  • Each first sensing electrode 15 is connected to each corresponding touch pad 22 through each first lead 152.
  • Each of the second sensing electrodes 17 is arranged in an array along the second direction X, and is electrically connected by each second connecting portion 171.
  • Each second sensing electrode 17 is connected to each corresponding touch pad 22 through each second lead 172.
  • Each first connection part 151 and each second connection part 171 may be a metal wire.
  • each first sensing electrode 15 and each second sensing electrode 17 is, for example, molybdenum, silver, titanium, copper, aluminum, molybdenum/aluminum/molybdenum or titanium/aluminum/titanium.
  • Each of the first sensing electrodes 15 and each of the second sensing electrodes 17 is the prior art, and will not be repeated here.
  • FIG. 3 also includes an organic and inorganic composite layer 18, an organic encapsulation layer 19 and a second inorganic encapsulation layer 20.
  • the organic and inorganic composite layer 18 is disposed between the first inorganic encapsulation layer 13 and the first insulating layer 14.
  • the organic encapsulation layer 19 is disposed on each of the second sensing electrodes 17.
  • the second inorganic encapsulation layer 20 is disposed on the organic encapsulation layer 19.
  • the organic material of the organic and inorganic composite layer 18 is aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ) or zirconia (ZrO 2 ), and the inorganic material of the organic and inorganic composite layer 18 is aluminum-based high
  • the molecular material (alucone) is obtained by reacting, for example, trimethylazonium (TMA) with ethylene glycol (EG).
  • TMA trimethylazonium
  • EG ethylene glycol
  • the organic and inorganic composite layer 18 is a multilayer alternating structure.
  • the multilayer alternating structure is illustrated by taking the aluminum oxide (Al 2 O 3 ) 181 and the aluminum-based polymer material (alucone) 182 as a pair of alternating layers 183 as an example.
  • the aluminum oxide (Al 2 O 3 ) 181 is the bottom layer of the multilayer alternating structure, and the alternating layers 183 have at least 3 pairs. Therefore, the multilayer alternating structure of this embodiment can achieve flexibility and water and oxygen barrier properties. Excellent hybrid film packaging structure.
  • the material of the organic encapsulation layer 19 is one or a combination of acrylic, epoxy, or silicone.
  • the material of the second inorganic encapsulation layer 20 is SiNx or SiONx, and the ratio of the number of atoms of silicon to nitrogen in the second inorganic encapsulation layer 20 is greater than 2 to 1 (Si:N>2:1). The higher the ratio of Si:N atoms, the higher the water oxygen barrier and corrosion resistance.
  • FIG. 5 also includes a third inorganic encapsulation layer 21.
  • the third inorganic encapsulation layer 21 is disposed between the organic and inorganic composite layer 18 and the first insulating layer 14.
  • the material of the third inorganic encapsulation layer 21 is SiNx or SiONx, and the ratio of the number of atoms of silicon to nitrogen in the third inorganic encapsulation layer 21 is greater than 2 to 1 (Si:N>2:1). The higher the ratio of Si:N atoms, the higher the water oxygen barrier and corrosion resistance. It can be seen that the embodiment shown in FIG. 5 has a higher barrier performance than the embodiment shown in FIG. 3.
  • the materials of the first insulating layer 14 and the second insulating layer 16 are one or a combination of SiNx, SiONx, and SiOx, respectively.
  • the ratio of the number of atoms of silicon to nitrogen of the first insulating layer 14 and the second insulating layer 16 is greater than 1 to 1 (Si:N>1:1). The higher the ratio of Si:N atoms, the higher the water oxygen barrier and corrosion resistance.
  • the base 11 includes a substrate (the figure is omitted) and a plurality of thin film transistors (the figure is omitted) disposed on the substrate, and each of the thin film transistors actively drives the corresponding pixels 122 to emit light.
  • each first sensing electrode 15 and each second sensing electrode 17 are directly fabricated in a thin film packaging structure such as the second insulating layer 16 and the organic packaging layer 19, so that each first sensing electrode 15 and each second sensing electrode 17 is closer to the light emitting part 12 in the vertical/longitudinal direction, which improves the precision of touch manufacturing.
  • increasing the line width W1 size of each first sensing electrode 15 and each second sensing electrode 17 can reduce the difficulty of manufacturing each sensing electrode 15 and 17 (that is, the manufacturing becomes easier), reduce the manufacturing cost, and reduce the sensing The electrodes 15 and 17 interfere with the optics to achieve light penetration efficiency.
  • an embodiment of the present invention also provides a display device, such as the flexible touch screen 1 described in the foregoing embodiment.
  • the display device includes, but is not limited to, a smart phone, a television (TV), a tablet computer, a notebook computer, a car display, a wearable device, or other suitable flexible touch display screen 1.
  • TV television
  • tablet computer a tablet computer
  • notebook computer a car display
  • wearable device or other suitable flexible touch display screen 1.
  • manufacturing method and related materials of the flexible touch display screen 1 please refer to the above-mentioned embodiment, which will not be repeated here.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种柔性触控显示屏及其显示装置，其中柔性触控显示屏包括依序叠设的基底、发光部、第一无机封装层、第一绝缘层、多个第一感应电极及多个第二感应电极。所述发光部包括像素限定层和多个像素。各所述第一感应电极间隔的设置在所述第一绝缘层上。各所述第二感应电极和各所述第一感应电极的宽度小于或等于所述像素限定层的堤部的宽度。

Description

柔性触控显示屏及其显示装置 技术领域
本发明涉及一种显示制造领域，尤指一种柔性触控显示屏及其显示装置。
 背景技术
有机发光二极体显示屏（OLED）具有快响应速度、自发光、高对比度、温度适用范围广等优点，现已广泛应用于各种领域的显示装置中。OLED与其它显示技术相比较，最大的特点是能够实现柔性显示，其中柔性显示的每个膜层都能够做得更薄。由于OLED触控膜基本上采用贴合工艺且单独制作，不但增加了工艺的复杂程度而且厚度较高。目前已经有一种OLED触控膜在OLED制程中直接制作触控层，这样不但能够降低生产成本，而且更容易实现动态弯折OLED触控膜产品。然而上述的OLED触控膜产品中的触控电极距离发光层较远，其中触控感应电极的线宽不能制作太高，否则会造成光穿透率不佳，发光效率降低的问题。
 技术问题
由于OLED触控膜基本上采用贴合工艺且单独制作，不但增加了工艺的复杂程度而且厚度较高。目前已经有一种OLED触控膜在OLED制程中直接制作触控层，这样不但能够降低生产成本，而且更容易实现动态弯折OLED触控膜产品。然而上述的OLED触控膜产品中的触控电极距离发光层较远，其中触控感应电极的线宽不能制作太高，否则会造成光穿透率不佳，发光效率降低的问题。
 技术解决方案
本发明的目的，在于提供一种柔性触控显示屏及其显示装置，使各第一感应电极和各第二感应电极更靠近发光部，提高触控制作的精度，以及降低各感应电极的制作难度。
为达到本发明前述目的，本发明提供一种柔性触控显示屏，包括基底、发光部、第一无机封装层、第一绝缘层、多个第一感应电极及多个第二感应电极。发光部设置在所述基底上，所述发光部包括像素限定层和间隔的设置在所述像素限定层中的多个像素。第一无机封装层设置在所述发光部上。第一绝缘层设置在所述第一无机封装层上。各所述第一感应电极间隔的设置在所述第一绝缘层上。第二绝缘层设置在各所述第一感应电极上。多个第二感应电极设置在所述第二绝缘层上并对应各所述第一感应电极设置，各所述第二感应电极和各所述第一感应电极的宽度小于或等于所述像素限定层的堤部的宽度，且各所述第二感应电极和各所述第一感应电极曝露各所述像素的位置。
优选地，还包括有机及无机复合层、有机封装层和第二无机封装层，所述有机及无机复合层设置在所述第一无机封装层和所述第一绝缘层之间，所述有机封装层设置在所述各所述第二感应电极上，所述第二无机封装层设置在所述有机封装层上。
优选地，所述有机及无机复合层的有机材料为氧化铝(Al 2O 3),氧化钛(TiO 2)或氧化锆(ZrO 2)，所述有机及无机复合层的无机材料为铝基高分子材料(alucone)，其中所述有机及无机复合层为多层交替结构。
优选地，所述有机封装层的材料为压克力、环氧树脂或有机硅类的其中一种或其组合，所述第二无机封装层的材料为SiNx或SiONx，且所述第二无机封装层的硅与氮的原子数量比例大于2比1(Si:N>2:1)。
优选地，所述多层交替结构包括所述氧化铝(Al 2O 3)和所述铝基高分子材料(alucone)为一对交替层，所述氧化铝(Al 2O 3)为所述多层交替结构最底层，所述交替层至少为3对。
优选地，还包括第三无机封装层，所述第三无机封装层设置在所述有机及无机复合层和所述第一绝缘层之间，所述第三无机封装层的材料为SiNx或SiONx，且所述第三无机封装层的硅与氮的原子数量比例大于2比1(Si:N>2:1)，各所述第一感应电极和各所述第二感应电极的材料为钼、银、钛、铜、铝、钼/铝/钼或钛/铝/钛。
优选地，还包括多个第一连接部、多个第二连接部和多个触控垫，各所述第一感应电极通过各所述第一连接部电性连接并连接到对应的各所述触控垫，各所述第二感应电极通过各所述第二连接部电性连接并连接到对应的各所述触控垫。
优选地，所述第一绝缘层和所述第二绝缘层的材料分别为SiNx、SiONx、SiOx其中一种或其组合，所述第一绝缘层和所述第二绝缘层的硅与氮的原子数量比例分别大于1比1(Si:N>1:1)。
优选地，所述基底包括衬底和设置在衬底上的多个薄膜晶体管(TFT)，各所述薄膜晶体管驱动对应的各所述像素发光。
再者，本发明还提出一种显示装置，包括如前所述实施例中所述的柔性触控显示屏。
优选地，还包括有机及无机复合层、有机封装层和第二无机封装层，所述有机及无机复合层设置在所述第一无机封装层和所述第一绝缘层之间，所述有机封装层设置在所述各所述第二感应电极上，所述第二无机封装层设置在所述有机封装层上。
优选地，所述有机及无机复合层的有机材料为氧化铝(Al 2O 3),氧化钛(TiO 2)或氧化锆(ZrO 2)，所述有机及无机复合层的无机材料为铝基高分子材料(alucone)，其中所述有机及无机复合层为多层交替结构。
优选地，所述有机封装层的材料为压克力、环氧树脂或有机硅类的其中一种或其组合，所述第二无机封装层的材料为SiNx或SiONx，且所述第二无机封装层的硅与氮的原子数量比例大于2比1(Si:N>2:1)。
优选地，所述多层交替结构包括所述氧化铝(Al 2O 3)和所述铝基高分子材料(alucone)为一对交替层，所述氧化铝(Al 2O 3)为所述多层交替结构最底层，所述交替层至少为3对。
优选地，还包括第三无机封装层，所述第三无机封装层设置在所述有机及无机复合层和所述第一绝缘层之间，所述第三无机封装层的材料为SiNx或SiONx，且所述第三无机封装层的硅与氮的原子数量比例大于2比1(Si:N>2:1)，各所述第一感应电极和各所述第二感应电极的材料为钼、银、钛、铜、铝、钼/铝/钼或钛/铝/钛。
优选地，还包括多个第一连接部、多个第二连接部和多个触控垫，各所述第一感应电极通过各所述第一连接部电性连接并连接到对应的各所述触控垫，各所述第二感应电极通过各所述第二连接部电性连接并连接到对应的各所述触控垫。
优选地，所述第一绝缘层和所述第二绝缘层的材料分别为SiNx、SiONx、SiOx其中一种或其组合，所述第一绝缘层和所述第二绝缘层的硅与氮的原子数量比例分别大于1比1(Si:N>1:1)。
优选地，所述基底包括衬底和设置在衬底上的多个薄膜晶体管(TFT)，各所述薄膜晶体管驱动对应的各所述像素发光。
 有益效果
本发明还具有以下功效，本发明通过一种高可靠性、高效率的柔性触控显示屏，将各第一感应电极和各第二感应电极直接制作在各薄膜封装结构(touch-in-TFE)中，使各第一感应电极和各第二感应电极在垂直/纵向方向上更靠近发光部，提高触控制作的精度。此外，提高各第一感应电极和各第二感应电极的线宽W1尺寸，能够降低各感应电极的制作难度(即制作变得容易)、降低制作成本，还能够降低各感应电极对光学的干扰，达到实现光穿透效率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例柔性触控显示屏及其显示装置的横截面图；
图2是本发明实施例柔性触控显示屏及其显示装置的触控结构的平面示意图；
图3是本发明实施例柔性触控显示屏及其显示装置的另一横截面图；
图4为图3的实施例有机及无机复合层的横截面图；及
图5是本发明实施例柔性触控显示屏及其显示装置的又一横截面图。
 本发明的最佳实施方式
在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。
请参照图1所示，本发明实施例提供一种柔性触控显示屏1，包括基底11、发光部12、第一无机封装层13、第一绝缘层14、多个第一感应电极15及多个第二感应电极17。发光部12设置在所述基底11上，所述发光部12包括像素限定层121和间隔的设置在所述像素限定层121中的多个像素122。如图1所示的实施例中，各所述像素122采用有机材料实现自我发光(self-emissive)之显示技术，所述像素122例如为红色(R)、绿色(G)和蓝色(B)等，因此本实施例的柔性触控显示屏1优选为柔性触控有机发光二极管(organic light emitting diode, OLED)显示屏。
第一无机封装层13设置在所述发光部12上。第一绝缘层14设置在所述第一无机封装层13上。各所述第一感应电极15间隔的设置在所述第一绝缘层14上。第二绝缘层16设置在各所述第一感应电极15上。多个第二感应电极17设置在所述第二绝缘层16上并对应各所述第一感应电极15设置。各所述第二感应电极17和各所述第一感应电极15的宽度W1小于所述像素限定层121的堤部(bank)123的宽度W2，且各所述第二感应电极17和各所述第一感应电极15曝露各所述像素122的位置，使各像素122的光线能够穿透各所述第二感应电极17和各所述第一感应电极15，增加光穿透效率。在其他不同的实施例中，各所述第二感应电极17和各所述第一感应电极15的宽度W1也能够等于所述像素限定层121的堤部(bank)123的宽度W2，视需要而改变。
请一并参照图2所示，还包括多个第一连接部151、多个第二连接部171和多个触控垫22。各所述第一感应电极15沿第一方向Y阵列设置，且通过各第一连接部151电性连接。各第一感应电极15通过各第一引线152连接到对应的各触控垫22。各所述第二感应电极17沿第二方向X阵列设置，且通过各第二连接部171电性连接。各第二感应电极17通过各第二引线172连接到对应的各触控垫22。各第一连接部151和各第二连接部171可为金属线。各第一感应电极15和各第二感应电极17的材料例如为钼、银、钛、铜、铝、钼/铝/钼或钛/铝/钛。各第一感应电极15和各第二感应电极17为现有技术，在此不多加赘述。
请一并参考图3所示，还包括有机及无机复合层18、有机封装层19和第二无机封装层20。所述有机及无机复合层18设置在所述第一无机封装层13和所述第一绝缘层14之间。所述有机封装层19设置在所述各所述第二感应电极17上。所述第二无机封装层20设置在所述有机封装层19上。
所述有机及无机复合层18的有机材料为氧化铝(Al 2O 3),氧化钛(TiO 2)或氧化锆(ZrO 2)，所述有机及无机复合层18的无机材料为铝基高分子材料(alucone)，采用例如三甲基错（TMA)与乙二醇（EG)反应得到。所述有机及无机复合层18为多层交替结构。
如图4所示，所述多层交替结构例如以所述氧化铝(Al 2O 3)181和所述铝基高分子材料(alucone)182为一对交替层183为例说明。所述氧化铝(Al 2O 3)181为所述多层交替结构最底层，且所述交替层183至少为3对，因此通过本实施例的多层交替结构能够得到柔性、阻水氧性能倶佳的混合型薄膜封装结构。
此外，所述有机封装层19的材料为压克力、环氧树脂或有机硅类的其中一种或其组合。所述第二无机封装层20的材料为SiNx或SiONx，且所述第二无机封装层20的硅与氮的原子数量比例大于2比1(Si:N>2:1)。当Si:N的原子数量比例越高，阻隔水氧和抗腐蚀性能越高。
请一并参考图5所示，还包括第三无机封装层21。所述第三无机封装层21设置在所述有机及无机复合层18和所述第一绝缘层14之间。所述第三无机封装层21的材料为SiNx或SiONx，且所述第三无机封装层21的硅与氮的原子数量比例大于2比1(Si:N>2:1)。当Si:N的原子数量比例越高，阻隔水氧和抗腐蚀性能越高。由此可知，如图5所示的实施例比图3所示的实施例具有更高的阻隔性能。
需说明的是，所述第一绝缘层14和所述第二绝缘层16的材料分别为SiNx、SiONx、SiOx其中一种或其组合。所述第一绝缘层14和所述第二绝缘层16的硅与氮的原子数量比例分别大于1比1(Si:N>1:1)。当Si:N的原子数量比例越高，阻隔水氧和抗腐蚀性能越高。所述基底11包括衬底(图略)和设置在衬底上的多个薄膜晶体管(图略)，各所述薄膜晶体管主动驱动对应的各所述像素122发光。
本发明实施例将各第一感应电极15和各第二感应电极17直接制作在第二绝缘层16和有机封装层19等薄膜封装结构中，使各第一感应电极15和各第二感应电极17在垂直/纵向方向上更靠近发光部12，提高触控制作的精度。此外，提高各第一感应电极15和各第二感应电极17的线宽W1尺寸，能够降低各感应电极15、17的制作难度(即制作变得容易)、降低制作成本，还能够降低各感应电极15、17对光学的干扰，达到实现光穿透效率。
再者，本发明实施例还提供一种显示装置，如前述实施例所述的柔性触控显示屏1。所述显示装置包括但不限于智能手机、电视(TV)、平板电脑、笔记本电脑、车载显示器、可穿戴设备或其他适合的柔性触控显示屏1中。有关于柔性触控显示屏1的结构、制作方式与相关材料，请参考上述实施例所陈，在此不再赘述。
综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。

Claims (18)

  1. 一种柔性触控显示屏，包括:
    基底；
    发光部，设置在所述基底上，所述发光部包括像素限定层和间隔的设置在所述像素限定层中的多个像素；
    第一无机封装层，设置在所述发光部上；
    第一绝缘层，设置在所述第一无机封装层上，；
    多个第一感应电极，各所述第一感应电极间隔的设置在所述第一绝缘层上；
    第二绝缘层；设置在各所述第一感应电极上；以及
    多个第二感应电极，设置在所述第二绝缘层上并对应各所述第一感应电极设置，各所述第二感应电极和各所述第一感应电极的宽度小于或等于所述像素限定层的堤部的宽度，且各所述第二感应电极和各所述第一感应电极曝露各所述像素的位置。
  2. 如权利要求1所述柔性触控显示屏，还包括有机及无机复合层、有机封装层和第二无机封装层，所述有机及无机复合层设置在所述第一无机封装层和所述第一绝缘层之间，所述有机封装层设置在所述各所述第二感应电极上，所述第二无机封装层设置在所述有机封装层上。
  3. 如权利要求2所述柔性触控显示屏，其中所述有机及无机复合层的有机材料为氧化铝,氧化钛或氧化锆，所述有机及无机复合层的无机材料为铝基高分子材料，其中所述有机及无机复合层为多层交替结构。
  4. 如权利要求2所述柔性触控显示屏，其中所述有机封装层的材料为压克力、环氧树脂或有机硅类的其中一种或其组合，所述第二无机封装层的材料为SiNx或SiONx，且所述第二无机封装层的硅与氮的原子数量比例大于2比1。
  5. 如权利要求3所述柔性触控显示屏，其中所述多层交替结构包括所述氧化铝和所述铝基高分子材料为一对交替层，所述氧化铝为所述多层交替结构的最底层，所述交替层至少为3对。
  6. 如权利要求1所述柔性触控显示屏，还包括第三无机封装层，所述第三无机封装层设置在所述有机及无机复合层和所述第一绝缘层之间，所述第三无机封装层的材料为SiNx或SiONx，且所述第三无机封装层的硅与氮的原子数量比例大于2比1，各所述第一感应电极和各所述第二感应电极的材料为钼、银、钛、铜、铝、钼/铝/钼或钛/铝/钛。
  7. 如权利要求1所述柔性触控显示屏，还包括多个第一连接部、多个第二连接部和多个触控垫，各所述第一感应电极通过各所述第一连接部电性连接并连接到对应的各所述触控垫，各所述第二感应电极通过各所述第二连接部电性连接并连接到对应的各所述触控垫。
  8. 如权利要求1所述柔性触控显示屏，其中所述第一绝缘层和所述第二绝缘层的材料分别为SiNx、SiONx、SiOx其中一种或其组合，所述第一绝缘层和所述第二绝缘层的硅与氮的原子数量比例分别大于1比1。
  9. 如权利要求1所述柔性触控显示屏，其中所述基底包括衬底和设置在衬底上的多个薄膜晶体管，各所述薄膜晶体管驱动对应的各所述像素发光。
  10. 一种显示装置，包括:
    一柔性触控显示屏，包括:
    基底；
    发光部，设置在所述基底上，所述发光部包括像素限定层和间隔的设置在所述像素限定层中的多个像素；
    第一无机封装层，设置在所述发光部上；
    第一绝缘层，设置在所述第一无机封装层上，；
    多个第一感应电极，各所述第一感应电极间隔的设置在所述第一绝缘层上；
    第二绝缘层；设置在各所述第一感应电极上；以及
    多个第二感应电极，设置在所述第二绝缘层上并对应各所述第一感应电极设置，各所述第二感应电极和各所述第一感应电极的宽度小于或等于所述像素限定层的堤部的宽度，且各所述第二感应电极和各所述第一感应电极曝露各所述像素的位置。
  11. 如权利要求10所述显示装置，还包括有机及无机复合层、有机封装层和第二无机封装层，所述有机及无机复合层设置在所述第一无机封装层和所述第一绝缘层之间，所述有机封装层设置在所述各所述第二感应电极上，所述第二无机封装层设置在所述有机封装层上。
  12. 如权利要求11所述显示装置，其中所述有机及无机复合层的有机材料为氧化铝,氧化钛或氧化锆，所述有机及无机复合层的无机材料为铝基高分子材料，其中所述有机及无机复合层为多层交替结构。
  13. 如权利要求11所述显示装置，其中所述有机封装层的材料为压克力、环氧树脂或有机硅类的其中一种或其组合，所述第二无机封装层的材料为SiNx或SiONx，且所述第二无机封装层的硅与氮的原子数量比例大于2比1。
  14. 如权利要求12所述显示装置，其中所述多层交替结构包括所述氧化铝和所述铝基高分子材料为一对交替层，所述氧化铝为所述多层交替结构的最底层，所述交替层至少为3对。
  15. 如权利要求10所述显示装置，其中还包括第三无机封装层，所述第三无机封装层设置在所述有机及无机复合层和所述第一绝缘层之间，所述第三无机封装层的材料为SiNx或SiONx，且所述第三无机封装层的硅与氮的原子数量比例大于2比1，各所述第一感应电极和各所述第二感应电极的材料为钼、银、钛、铜、铝、钼/铝/钼或钛/铝/钛。
  16. 如权利要求10所述显示装置，还包括多个第一连接部、多个第二连接部和多个触控垫，各所述第一感应电极通过各所述第一连接部电性连接并连接到对应的各所述触控垫，各所述第二感应电极通过各所述第二连接部电性连接并连接到对应的各所述触控垫。
  17. 如权利要求10所述显示装置，其中所述第一绝缘层和所述第二绝缘层的材料分别为SiNx、SiONx、SiOx其中一种或其组合，所述第一绝缘层和所述第二绝缘层的硅与氮的原子数量比例分别大于1比1。
  18. 如权利要求10所述显示装置，其中所述基底包括衬底和设置在衬底上的多个薄膜晶体管，各所述薄膜晶体管驱动对应的各所述像素发光。
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