WO2020239193A1 - Appareil de traitement thermique, système de traitement de substrat et procédé de traitement d'un substrat - Google Patents

Appareil de traitement thermique, système de traitement de substrat et procédé de traitement d'un substrat Download PDF

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Publication number
WO2020239193A1
WO2020239193A1 PCT/EP2019/063526 EP2019063526W WO2020239193A1 WO 2020239193 A1 WO2020239193 A1 WO 2020239193A1 EP 2019063526 W EP2019063526 W EP 2019063526W WO 2020239193 A1 WO2020239193 A1 WO 2020239193A1
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WO
WIPO (PCT)
Prior art keywords
carrier
substrate
processing system
coils
heat treatment
Prior art date
Application number
PCT/EP2019/063526
Other languages
English (en)
Inventor
Christopher MALMS
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2019/063526 priority Critical patent/WO2020239193A1/fr
Priority to KR1020217042106A priority patent/KR20220010559A/ko
Priority to CN201980096786.2A priority patent/CN113874544A/zh
Publication of WO2020239193A1 publication Critical patent/WO2020239193A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor

Definitions

  • the present disclosure generally relates to substrate processing, such as large area substrate processing. Particularly, the present disclosure relates to substrate processing on carriers carrying substrates in a substrate processing apparatus. Further, the present disclosure relates to apparatuses for heat treatment, to substrate processing systems and methods for processing a substrate. For example, embodiments can relate to conductive carrier heating for stabilization of a vacuum deposition process. In particular, the present disclosure relates to apparatuses for heat treatment of a carrier, e.g. a carrier for carrying a substrate such as a large area substrate in a processing system.
  • a carrier e.g. a carrier for carrying a substrate such as a large area substrate in a processing system.
  • Techniques for layer deposition on a substrate include, for example, sputter deposition, thermal evaporation, and chemical vapor deposition.
  • a sputter deposition process can be used to deposit a material layer on the substrate, such as a layer of a conducting material or an insulating material.
  • Coated materials may be used in several applications and in several technical fields. For instance, one application lies in the field of microelectronics, such as for generating semiconductor devices.
  • substrates for displays are often coated by physical vapor deposition, e.g. a sputter deposition process, or chemical vapor deposition (CVD). Further applications include insulating panels, substrates with TFT, color filters or the like.
  • Substrate processing systems may include an atmospheric portion, e.g. a clean room, one or more vacuum chambers and a load lock chamber for loading substrates from the atmospheric portion to the one or more vacuum chambers.
  • the load lock chambers may be frequently evacuated and vented to load and/or unload substrates.
  • two different concepts may be provided.
  • substrates may be handled directly by a robot or the like.
  • substrates may be loaded on a carrier (a substrate carrier) and the substrate carrier supporting the substrate may be handled in a vacuum processing system.
  • Vacuum processing systems may provide a cycle for substrates from atmosphere to vacuum and back to atmosphere. This may for example result in absorption of atmospheric water.
  • the water may distort during vacuum processing of the substrate and can destabilize the deposition process, which may result e.g. in different layer properties. For example, the water may influence material properties of a layer deposited on a substrate.
  • a radiation heating, such as an infrared heating, of the carrier supporting a substrate may result in direct heating of substrate edges.
  • an apparatus for heat treatment of a carrier in a substrate processing system includes a heating arrangement configured to provide heat energy to the carrier, the heating arrangement includes one or more coils.
  • an apparatus for heat treatment of a carrier in a substrate processing system is provided.
  • the apparatus includes a heating arrangement having one or more coils arranged around and/or outside of a substrate receiving area.
  • a substrate processing system includes an apparatus for heat treatment of a carrier in a substrate processing system is provided.
  • the apparatus includes a heating arrangement configured to provide heat energy to the carrier, the heating arrangement includes one or more coils.
  • a carrier for supporting a substrate during substrate processing includes a frame configured to support a substrate in a substrate processing area having a first material with a first conductivity and a shielding for the frame having a second material with a second conductivity lower than the first conductivity.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner.
  • FIG. 1 shows a top view of a processing system according to embodiments described herein
  • FIG. 2A shows a front view of a carrier carrying a substrate according to embodiments described herein;
  • FIG. 2B shows a top view of a carrier carrying a substrate according to embodiments described herein;
  • FIGS. 3 A to 3C show areas prone for heat treatment and a carrier according to embodiments described herein;
  • FIG. 4 shows a top view of a substrate processing system according to embodiments described herein.
  • FIG. 5 show flow diagrams of a method according to embodiments described herein.
  • Embodiments of the present disclosure provide an apparatus for heat treatment of a carrier.
  • the apparatus includes a heating arrangement for inductively heating the carrier and, particularly a heating arrangement including one or more coils.
  • the inductive heating of the carrier at atmosphere or inside the vacuum maintains a carrier temperature to avoid water absorption or to desorb water collected at the carrier.
  • inductive heating occurs only in the metal carrier. Direct heating of the substrate edges can be avoided as compared to methods utilizing heat radiation.
  • a carrier for supporting the substrate in a vacuum processing system may adsorb molecules, such as water molecules, which may negatively influence vacuum processing of the substrate.
  • a carrier may be provided for processing a plurality of substrates. The carrier may be transferred to a substrate loading station outside the vacuum chambers of a vacuum processing system to receive the substrate and may be transferred back into the vacuum chambers of the vacuum processing system having a new substrate to be processed.
  • material to be deposited on a substrate may also be deposited on the carrier.
  • a carrier will be coated with each process run. The coating on the carrier will grow and simultaneously the absorption of atmospheric water will increase.
  • a surface of a carrier being cycled out of and into vacuum chambers of a vacuum processing system may have an increasingly thick layer of deposition material.
  • the material accumulating on the carrier increases the surface available for adsorption or absorption of molecules, such as water molecules. Accordingly, it is beneficial to desorb such molecules from the carrier, particularly in a vacuum processing system, in which a carrier is repeatedly introduced in vacuum chambers of the vacuum processing system from atmospheric conditions.
  • FIG. 1 shows a top view of a substrate processing system 100 according to embodiments described herein.
  • the processing system may include modules. Modules can be or include chambers.
  • the processing system includes one or more atmospheric modules 170.
  • the atmospheric modules may include a swing module 172.
  • the processing system may include one or more load lock modules 174 which may also be referred to herein as a“pre-vacuum module 182”.
  • the processing system may include one or more transfer modules 180.
  • the one or more transfer modules 180 may include one or more high- vacuum modules 184.
  • the processing system includes one or more processing modules 190. Vacuum conditions may be applied to the one or more processing modules 190 and/or the transfer modules 180 and/or the load lock modules 174.
  • the load lock modules 174, the processing modules 190 and/or the transfer modules 180 including the pre-vacuum modules 182 and the high- vacuum modules 184 may include chambers.
  • the processing system may be used to process a substrate 230.
  • Processing of a substrate may be understood as transferring material to a substrate.
  • deposition material may be deposited on the substrate, for example, by a CVD process or a PVD process, such as sputtering or evaporation.
  • the substrate 230 may include a deposition material receiving side.
  • the deposition material receiving side of the substrate may be regarded as the side of the substrate facing a deposition source.
  • processing of a substrate may also include etching, cleaning, or heat treatment of the substrate.
  • the atmospheric module 170 may be connected to the one or more transfer modules 180. Additionally or alternatively, the atmospheric module 170 may be connected to the one or more processing modules 190.
  • a load lock module 174 may connect the atmospheric module and the one or more high vacuum modules 184 and/or processing modules 190.
  • the load lock module or chamber may assist in equalizing pressure differences between modules. For example, atmospheric pressure is applied in one module and a vacuum is applied in the module which is connected to the one module via the load lock module.
  • the substrate processing system 100 may include a transport arrangement 160 for transferring one or more substrates 230.
  • the transport arrangement 160 may include transportation paths 162 extending through the processing system.
  • the one or more substrates 230 may be transported from the atmospheric module to the one or more processing modules.
  • the one or more substrates may be transported between the one or more processing modules.
  • a plurality of substrates may be transported.
  • the one or more substrates and/or the plurality of substrates may circulate through the substrate processing system 100.
  • the substrates for example, may cycle between the atmospheric module and the one or more processing modules.
  • such transportation may be along the transportation paths and/or along a transportation loop.
  • the substrates are transported, e.g. the substrates may cycle, while being supported by a carrier.
  • a pre-vacuum module may be arranged between the atmospheric module and the one or more processing modules.
  • the atmospheric module may include atmospheric conditions.
  • the air pressure in the load module may include atmospheric air pressure.
  • particles, like e.g. 0 2 , H 2 0 and N 2 may be present in the atmospheric module or generally outside one of the vacuum chambers.
  • the pre-vacuum module may include different pressure conditions compared to the atmospheric module.
  • the pre-vacuum chamber includes lower pressure conditions.
  • the pressure in the pre-vacuum chamber may be below 10 1 mbar.
  • the pre-vacuum chamber may be connected to one or more processing chambers.
  • the processing chambers may include different pressure conditions compared to the atmospheric module and/or the pre-vacuum chamber.
  • a load lock module may be arranged between the pre-vacuum chamber and the processing chambers.
  • the processing chamber may include vacuum conditions.
  • Vacuum conditions as used herein include pressure conditions in the range of below 10 1 mbar or below 10 3 mbar, such as 10 7 mbar to 10 2 mbar.
  • vacuum conditions in the load lock module may be switched between atmospheric pressure conditions and subatmospheric pressure conditions, e.g. in a range at or below 10 1 mbar.
  • the substrate For transferring a substrate into a high vacuum module, the substrate may be inserted into the load lock module provided at atmospheric pressure, the load lock module may be sealed, and subsequently may be set at a subatmospheric pressure in the range below 10- 1 mbar. Subsequently, an opening between the load lock chamber and the high vacuum module may be opened, and the substrate may be inserted into the high vacuum module to be transported into the processing module.
  • vacuum conditions in the processing modules may include process pressure conditions at or below 10 2 mbar, such as 10 3 mbar to 10 4 mbar.
  • Base pressure conditions in the processing modules may be in the range of 10 7 mbar to 10 6 mbar, particularly in the range of 10 7 mbar to 5* 10 6 mbar.
  • Vacuum conditions may be applied through the use of vacuum pumps or other vacuum creating techniques.
  • the one or more processing modules or chambers may include one or more deposition sources 220. If more than one deposition source is present, the deposition sources may be arranged in an array. For example, the deposition sources are arranged next to each other. The deposition sources may extend vertically in length. According to embodiments, the one or more deposition sources may be rotatably fixed to a bottom side of the processing module. Particularly, two to ten deposition sources may be present in the one or more processing chambers. More particularly, three or more deposition sources may be present in the one or more processing chambers.
  • Introducing a new substrate in the processing system may change desorption behavior and particle load or gas levels in the processing system.
  • the particle load may not only be changed by particles that enter the system by being attached to the substrates.
  • the absorption of particles to further process components, like e.g. carriers, further increases the particle load.
  • Embodiments of the present disclosure provide an apparatus, wherein components, such as carriers, are provided with a decreased particle load in a dedicated manner.
  • the processing system further includes an apparatus for heat treatment 200.
  • the apparatus may be located at and/or near the processing system, for example in at least one or more of the atmospheric module, the load lock module, the high vacuum module, and the transfer module, e.g. in a vacuum environment or not. Additionally or alternatively, the apparatus may be located inside the processing system.
  • the apparatus may include one or more heating arrangements.
  • FIG. 2A shows a front view of a carrier according to embodiments described herein.
  • one or more substrates 230 may be carried by a carrier 212 through the substrate processing system 100.
  • the carrier 212 may be transported via the transport arrangement in the processing system.
  • the system may include a plurality of carriers 212 carrying a plurality of substrates 230.
  • Each carrier 212 may carry one substrate.
  • a plurality of carriers may be transported through the processing system simultaneously.
  • the carrier includes one or more edge portions 214.
  • the edge portions 214 extend outside the substrate receiving area.
  • the carrier 212 may carry a substrate 230.
  • the substrate may be loaded onto the carrier.
  • the substrate may be loaded in a substrate receiving area 232.
  • the substrate 230 may be attached to the carrier 212 via a holding arrangement 218, such as clamps or mounts.
  • the holding arrangement connects the carrier to the substrate.
  • the holding arrangement may include mounts.
  • the mounts may connect the carrier and the substrate.
  • the holding arrangement may connect the substrate and the carrier mechanically. Additionally or alternatively, the holding arrangement may connect the substrate at the carrier electrostatically.
  • the carrier may include, or be, an electrostatic chuck (E-chuck).
  • the E-chuck can have a supporting surface for supporting the substrate 230 thereon.
  • the E- chuck includes a dielectric body having electrodes embedded therein.
  • the dielectric body can include a dielectric material, preferably a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina or an equivalent material.
  • the dielectric body can be made of a polymer material such as polyimide.
  • the electrodes may be coupled to a power source, which provides power to the electrodes to control a chucking force.
  • the chucking force is an electrostatic force acting on the substrate 230 to fix the substrate 230 on the supporting surface.
  • E-chucks support substantially a whole surface of the substrate 230, such as the second main surface or back side. A bending of the substrate 230 can be avoided, since substantially the whole surface is attached to the defined supporting surface of the E-chuck.
  • the substrate 230 can be supported more stably and a process quality can be improved.
  • the substrate 230 is a large area substrate.
  • the large area substrate can have a size of at least 0.01 m 2 , specifically at least 0.1 m 2 , and more specifically at least 0.5 m 2 .
  • a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m 2 substrates (0.73 x 0.92m), GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • the one or more substrates may be oriented in a substantially vertical position.
  • substantially vertical is understood particularly when referring to the substrate orientation, to allow for a deviation from the vertical direction or orientation of ⁇ 20° or below, e.g. of ⁇ 10° or below. This deviation can be provided for example because a substrate support or carrier with some deviation from the vertical orientation might result in a more stable substrate position or a facing down substrate orientation might reduce particles on the substrate during deposition even better.
  • the substrate orientation e.g., during a layer deposition process, is considered substantially vertical, which is considered different from the horizontal substrate orientation, which may be considered as horizontal ⁇ 20° or below.
  • the one or more substrates may be in a substantially vertical position.
  • deposition material may be transferred from the vertically arranged deposition source to the substantially vertically oriented substrate.
  • the material to be deposited may be coated on the substrate.
  • Embodiments of the present disclosure relate, for example, to an apparatus for heat treatment 200 of a carrier 212 in a processing system.
  • the apparatus includes a heating arrangement 240 configured to provide heat energy to the one or more edge portions 214 of a carrier.
  • the heating arrangement includes one or more coils for inductive heating of the carrier.
  • Inductive carrier heating utilizes the electrical process of inductive heating by producing eddy current losses in a conductive material, for example, a conductive material of the carrier or attached to the carrier.
  • the inductive heating of the carrier at atmosphere or inside the vacuum maintains a carrier temperature to avoid water absorption or to desorb water collected at the carrier.
  • FIG. 2B shows a top view of a carrier carrying a substrate according to embodiments described herein.
  • the heating arrangement 240 may be arranged in the vicinity of the carrier. Particularly, the heating arrangement may be arranged in the vicinity of a substrate-carrier-arrangement 250.
  • the apparatus for heat treatment 200 may be arranged such that heat energy reaches the carrier 212.
  • the one or more heating arrangements 240 may be configured to provide heat energy to the edge portions 214.
  • the heating arrangement 240 may be arranged at a side at which deposition may occur.
  • the heating arrangement 240 may provide a heat energy of at least 1 kW/m 2 .
  • the heat energy provided by the heating arrangement ranges between 4 kW/m 2 and 100 kW/m 2 , particularly between 4 kW/m 2 and 10 kW/m 2 .
  • the carrier may be heated to a temperature of 120 °C.
  • the carrier may be heated to a temperature of up to 100 °C, more particularly up to 80 °C.
  • the carrier can include a frame.
  • the frame may include one or more frame portions.
  • the frame may for example be rectangular, i.e. corresponding to a glass substrate for display manufacturing.
  • the frame may include four or more frame portions, for example, four comer portions, at least one top bar, at least one bottom bar, and at least two sidebars.
  • a carrier as described herein may include aluminum or may essentially consist of aluminum.
  • the frame portions may be manufactured from aluminum.
  • Frame portions including aluminum may have an electrical conductivity of 35* 10 6 A ⁇ 'pt 1 or above. Accordingly, electrical loss of eddy currents generating heat may be comparably low. Accordingly, in order to provide the above-described heat energy, a power supply for generating electrical energy may be configured to provide at least 20 kW.
  • FIG. 3A shows a carrier 212.
  • the carrier provides a frame or an edge portion 214 for a substrate 230.
  • the carrier 212 may include a carrier frame 216.
  • the edge portions 214 may provide a frame surrounding the substrate receiving area 232.
  • the carrier frame 216 may display the outermost fringe of the carrier 212.
  • the carrier frame 216 may at least partly surround the substrate receiving area 232.
  • the carrier frame 216 may surround the substrate receiving area 232 completely.
  • the width of the carrier frame may range between 10 mm to 500 mm.
  • the width of the carrier frame may range between 50 mm to 400 mm. More particularly, the width of the carrier frame may range between 100 mm to 300 mm.
  • the heating arrangement 200 includes a coil 340, for example a coil of an inductor.
  • the coil can be a flat coil.
  • one or more windings can be provided in a plane parallel to a surface of the carrier 212.
  • FIG. 3A exemp lardy shows one winding. Additionally, further windings may be provided.
  • the coil is excited with a power supply 344 providing an alternating current for generation of an alternating magnetic field.
  • a matching circuit 342 can be provided for adapting the output power of the power supply 344 to the impedance of the coil 240.
  • a power supply 344 for an inductive heater includes an electrical circuit having an oscillator circuit.
  • Oscillator topologies may, for example, include semiconductor electrical switches, such as MOSFETs and/or IGBTs.
  • a matching circuit 342 may include capacitors.
  • an inductor, such as coil 340 can be provided for inductive heating.
  • the operating frequency can be 2 kHz to 200 KHz.
  • the frequency can be adapted to the heating process. For example, lower frequencies of e.g. 2kHz to 30 kHz may be used to heat the surface of the carrier and deeper regions of the carrier, i.e. regions below the surface in the bulk material.
  • portions of the carrier for example, frame portions or shields provided at the carrier can include material with comparable low electrical conductivity. Heat losses can be increased to enable easier heating of the carrier.
  • carrier portions may include or essentially consist of a material having an electrical conductivity of 10* 10 6 AV ⁇ nr 1 or below.
  • portions of the carrier can be made of titanium. Accordingly, a mixture of aluminum and titanium parts can be provided. According to yet further embodiments, which can be combined with other embodiments described herein, a carrier having frame portions may include the shield shielding the frame portions, wherein the shield includes or consists of titanium.
  • a carrier may have aluminum frame portions and a titanium shield for shielding the frame portions. Accordingly, the shield, which is exposed to coating and which is mainly exposed to molecules from atmospheric conditions, such as water molecules, can be more easily heated due to the lower electrical conductivity.
  • material composition of aluminum and another material having an electrical conductivity lower than aluminum, for example, titanium can be provided.
  • a carrier for supporting a substrate during substrate processing includes a frame configured to support a substrate in a substrate processing area having a first material, e.g. aluminum, with a first conductivity and a shielding for the frame having a second material, e.g. titanium, with a second conductivity lower than the first conductivity.
  • a first material e.g. aluminum
  • a shielding for the frame having a second material, e.g. titanium, with a second conductivity lower than the first conductivity.
  • FIG. 3A shows coil 340.
  • FIG. 3B shows several coils 340.
  • FIG. 3C shows one coil 340.
  • the heating power may be lower than the electrical power provided by the one or more power supplies 344. Power losses may occur in the inductors, for example the coils.
  • the coils can include or consist of copper or another material having a high electrical conductivity, particularly a conductivity of 50* 10 6 A ⁇ 'pt 1 or above.
  • the wiring of the inductor, i.e. the one or more coils can be provided by hollow tubes.
  • a hollow tube allows for a cooling fluid, such as water, to be provided in the wiring.
  • a coil 340 as shown exemplarity in FIG. 3C may be closed, e.g. to fully surround the edge portion of the carrier. Uniformity of heating may be further improved.
  • a flat coil provides the windings or wirings (or a single winding of wiring) at least partially in a plane.
  • a flat coil can be provided parallel to a surface, such as a frame surface, and, particularly in close vicinity to the surface of the carrier. Accordingly, a gap between the coil and the material to be heated can be small.
  • the one or more coils extend over a significant portion or essentially the entire surface of the carrier surface to be heated, such as a frame of the carrier.
  • a coil may be wound to correspond to a frame-shaped carrier or may be wound to correspond to at least a portion of the frame.
  • FIG. 3A shows a coil being essentially frame -shaped.
  • two L-shaped coils may be provided.
  • two or more coils for example, four coils 340 can be provided.
  • Each coil of, for example four coils can be provided at one side of the frame of the carrier 212.
  • embodiments having two or more coils may have an individual power supply 344 and/or an individual matching circuit 342 for each of the coils.
  • coils having a similar geometry may share a power supply and a matching circuit.
  • the left coil 340 and the right coil 340 may have a common power supply and a common matching circuit.
  • the upper coil 340 and lower coil 340 may have a common power supply and a common matching circuit.
  • heating of the carrier supports desorption of particles from the carrier and/or avoids absorption of particles or molecules on the carrier. Impurities can thus be removed from the carrier and/or contamination of the carrier can be avoided.
  • the carrier may be transported between different pressure conditions.
  • the one or more carriers of the system can be stopped in different modules and thus under different pressure conditions. During the stay under atmospheric pressure conditions, particles can adsorb to the carrier. These particles are transported to subsequent modules having different pressure conditions. The subsequent transport disturbs the ongoing process which thus has to settle before the process can be continued. It is thus advantageous to remove the particles from the carrier to speed up settlement of the process.
  • FIG. 4 shows a top view of a substrate processing system 100 according to embodiments described herein.
  • Embodiments of the present disclosure providing inductive heating for a carrier can be operated under atmospheric conditions as well as under vacuum conditions.
  • the substrate processing system 100 may include an atmospheric module 170 including a swing module 172 and an inductive heating module 474, load lock modules 174, one or more transfer modules 180 and one or more processing modules 190.
  • one swing module 172 may be connected to a load lock module 174 which may be further connected to a pre -vacuum chamber 182.
  • the pre-vacuum chamber may be connected to a high- vacuum chamber 184.
  • the high- vacuum chamber may be connected to a processing chamber.
  • the processing chamber may be connected to further processing chambers.
  • the quantity of process chambers that may be subsequently arranged may vary between one chamber and eight processing chambers, particularly one and five processing chambers, more particularly one and three processing chambers.
  • the substrate processing system 100 may further include the transport arrangement 160.
  • the heating arrangement 240 may be arranged at different positions of the substrate processing system 100.
  • the heating arrangement 240 may be arranged at the atmospheric modules 170.
  • the heating arrangement may be located at the swing module 172.
  • a heating module 474 can be provided between the swing module 172 and the load lock module.
  • a heating module 474 including an apparatus for heat treatment of a carrier can be provided under atmospheric conditions.
  • the apparatus for heat treatment 200 may be provided at the one or more transfer modules 180.
  • the apparatus for heat treatment 200 may be arranged in the one or more transfer modules 180.
  • the apparatus for heat treatment 200 or the one or more heating arrangements 240 may be located in the pre-vacuum module or chamber. Heating in the pre-vacuum chamber can be carried out statically. Static heating is to be understood as a heating arrangement that is stationary, for example, at a wall of the chamber. It may also be understood as a heating arrangement that is stationary, attached to a wall of the chamber. Stationary heating may include that the carrier is stopped inside the chamber.
  • particles may be removed in the beginning of the processing of a substrate. Further, adsorption may be avoided due to heating after exiting the carrier from vacuum conditions. Thus, spreading of particles to subsequent chambers is prevented more effectively. Further, degassing of the carrier is promoted. Thus, an improved process stability and performance can be achieved.
  • methods for heat treatment of the carrier can be used to maintain surface temperature of a carrier to avoid adsorption of water during contact at atmosphere. Accordingly, the carrier may be heated after unloading the carrier from the load lock chamber. Heating the carrier to a sufficiently high temperature and/or in sufficient material depth may result in a carrier temperature during operation of the swing module and loading of a subsequence substrate to be sufficiently high to avoid water adsorption.
  • Y et, inductive heating of the carrier may also be utilized for desorption of collected molecules, for example water molecules.
  • process stabilization can be provided for a substrate processing process, e.g. a deposition process.
  • the depletion of residual particles or gas may be monitored by a residual gas analysis (RGA) measurement.
  • the monitoring and regulating of temperature may be carried out by a control system.
  • the control system may be a closed loop system.
  • the measurement may be carried out in the one or more transfer modules 180 and/or in the one or more processing modules 190.
  • the RGA may be performed in the pre-vacuum chamber and a processing chamber.
  • the RGA may be in relation to the regulation of the heating.
  • a closed loop system for heating of the carrier may be established.
  • the regulation of the apparatus for heat treatment 200 may correlate to the results of the RGA. For example, if a high particle amount or a high residual gas volume is measured, the temperature of the apparatus for heat treatment may be increased.
  • the apparatus for heat treatment 200 may be provided at a part of a wall of the modules or chambers.
  • the modules or chambers may include a top wall, four side walls and/or a bottom wall.
  • the apparatus for heat treatment may be arranged at every wall of the one or more transfer chambers and/or the one or more atmospheric modules.
  • the apparatus for heat treatment 200 may be arranged at least at a part of the walls of the chamber.
  • the apparatus for heat treatment 200 may be arranged in an upper section, a lower section and/or a side section of the respective wall.
  • the apparatus for heat treatment 200 may further cover the whole of the respective wall.
  • the transport arrangement 160 may be configured to transport the carrier 212 past the apparatus for heat treatment 200.
  • transport paths 162 may be configured to provide the carrier at a site in a module where heating of the apparatus for heat treatment may be applied to the carrier 212.
  • the carrier may be stopped opposite the heating arrangement 240.
  • heating may be provided to the carrier 212 during movement of the carrier.
  • the carrier may be transported between the modules or chambers.
  • the carrier is transported between two transfer modules.
  • One of the transfer modules may be a pre-vacuum chamber and the second transfer module may be a high-vacuum chamber.
  • Heating may be provided to the carrier during transfer of the carrier.
  • Heating may be provided to the carrier frame as pulsed heating, i.e. heating is subsequently turned on and off
  • heating may be turned on and off depending on the position of the carrier and the substrate.
  • only the carrier, but not the substrate may be heated, e.g. by turning off the heating arrangement at specified positions of the carrier and/or substrate.
  • the first area of the substrate-carrier- arrangement may be the substrate receiving area of the substrate-carrier-arrangement.
  • the second area of the substrate-carrier- arrangement may be an edge portion of a carrier of the substrate-carrier-arrangement.
  • the first apparatus for heat treatment 252 may provide heating to the substrate receiving area and the second apparatus for heat treatment 254 may provide heating to the edge portion and/or the carrier frame.
  • FIG. 6 shows flow diagrams of a method according to embodiments described herein. The method may be performed by using the substrate processing system 100 according to embodiments described herein.
  • box 610 includes loading the substrate on a carrier in a substrate receiving area.
  • the carrier and the substrate may be a substrate-carrier-arrangement.
  • the carrier being loaded with the substrate may be placed on a swing module.
  • the swing module may be the swing module as described according to embodiments herein.
  • the substrate-carrier-arrangement may be brought into a vertical position by the swing module.
  • box 620 includes introducing the carrier into a substrate processing system.
  • the substrate-carrier-arrangement is introduced into the substrate processing system.
  • the carrier and/or the substrate-carrier-arrangement may be introduced vertically.
  • the carrier may be connected to a transport arrangement as described in embodiments herein.
  • the carrier and/or the substrate-carrier-arrangement may be transported through the substrate processing system.
  • the substrate-carrier-arrangement may be introduced into a load lock module or chamber as described herein.
  • box 630 includes inductive heating of an area of the carrier e.g., with an apparatus for heat treatment.
  • the area of the carrier being different from the substrate receiving area may be the heated carrier area. Heating may be provided with the heating arrangement as described in embodiments herein.
  • the apparatus for heat treatment may include a heating arrangement as described herein. For example, a heating can be provided for 20 sec or above and/or for 50 sec or below, such as for about 40 sec. A temperature of at least 80°C can be provided for the carrier.
  • particle adsorption or molecule adsorption may be avoided and/or particles that may adsorb to the carrier in atmospheric modules may be removed from the carrier.
  • such absorption may increasingly take place during stopping of the processing system when the carrier is placed in an atmospheric module.
  • degassing of the carrier may be ensured.
  • stability of the process is improved.

Abstract

L'invention concerne un appareil pour le traitement thermique d'un support dans un système de traitement de substrat. L'appareil comprend un agencement de chauffage conçu pour fournir de l'énergie thermique au support, l'agencement de chauffage comprenant un ou plusieurs enroulements.
PCT/EP2019/063526 2019-05-24 2019-05-24 Appareil de traitement thermique, système de traitement de substrat et procédé de traitement d'un substrat WO2020239193A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/EP2019/063526 WO2020239193A1 (fr) 2019-05-24 2019-05-24 Appareil de traitement thermique, système de traitement de substrat et procédé de traitement d'un substrat
KR1020217042106A KR20220010559A (ko) 2019-05-24 2019-05-24 열 처리하기 위한 장치, 기판 프로세싱 시스템, 및 기판을 프로세싱하기 위한 방법
CN201980096786.2A CN113874544A (zh) 2019-05-24 2019-05-24 用于热处理的设备、基板处理系统和用于处理基板的方法

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PCT/EP2019/063526 WO2020239193A1 (fr) 2019-05-24 2019-05-24 Appareil de traitement thermique, système de traitement de substrat et procédé de traitement d'un substrat

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KR20110130631A (ko) * 2010-05-28 2011-12-06 엘지디스플레이 주식회사 박막처리장치 및 이를 이용하는 박막처리공정의 기판가열방법
EP2423350A1 (fr) * 2010-08-27 2012-02-29 Applied Materials, Inc. Support pour substrat et son procédé d'assemblage
US20130026693A1 (en) * 2011-07-29 2013-01-31 Applied Materials, Inc. Substrate supporting edge ring with coating for improved soak performance
US20150008632A1 (en) * 2013-07-03 2015-01-08 Lam Research Ag Device for holding wafer shaped articles
US20180114715A1 (en) * 2016-10-25 2018-04-26 Nuflare Technology, Inc. Vapor phase growth apparatus, ring-shaped holder, and vapor phase growth method
WO2018236135A1 (fr) * 2017-06-20 2018-12-27 주식회사 다원시스 Dispositif de nettoyage de masque et procédé de nettoyage de masque
WO2019228627A1 (fr) * 2018-05-30 2019-12-05 Applied Materials, Inc. Appareil de traitement thermique, système de traitement de substrat et procédé de traitement de substrat

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US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features
US20110259879A1 (en) * 2010-04-22 2011-10-27 Applied Materials, Inc. Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers
WO2014058612A1 (fr) * 2012-10-09 2014-04-17 Applied Materials, Inc. Outil indexé de traitement de substrats en conduite
WO2017050379A1 (fr) * 2015-09-24 2017-03-30 Applied Materials, Inc. Support pour porter un substrat dans un procédé de dépôt de matériau et procédé de support de substrat
WO2017074484A1 (fr) * 2015-10-25 2017-05-04 Applied Materials, Inc. Appareil de dépôt sous vide sur un substrat et procédé de masquage du substrat pendant un dépôt sous vide

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US20100243606A1 (en) * 2009-03-27 2010-09-30 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
KR20110130631A (ko) * 2010-05-28 2011-12-06 엘지디스플레이 주식회사 박막처리장치 및 이를 이용하는 박막처리공정의 기판가열방법
EP2423350A1 (fr) * 2010-08-27 2012-02-29 Applied Materials, Inc. Support pour substrat et son procédé d'assemblage
US20130026693A1 (en) * 2011-07-29 2013-01-31 Applied Materials, Inc. Substrate supporting edge ring with coating for improved soak performance
US20150008632A1 (en) * 2013-07-03 2015-01-08 Lam Research Ag Device for holding wafer shaped articles
US20180114715A1 (en) * 2016-10-25 2018-04-26 Nuflare Technology, Inc. Vapor phase growth apparatus, ring-shaped holder, and vapor phase growth method
WO2018236135A1 (fr) * 2017-06-20 2018-12-27 주식회사 다원시스 Dispositif de nettoyage de masque et procédé de nettoyage de masque
WO2019228627A1 (fr) * 2018-05-30 2019-12-05 Applied Materials, Inc. Appareil de traitement thermique, système de traitement de substrat et procédé de traitement de substrat

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