WO2020237919A1 - 有机发光二极管显示装置及其制作方法 - Google Patents

有机发光二极管显示装置及其制作方法 Download PDF

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WO2020237919A1
WO2020237919A1 PCT/CN2019/106614 CN2019106614W WO2020237919A1 WO 2020237919 A1 WO2020237919 A1 WO 2020237919A1 CN 2019106614 W CN2019106614 W CN 2019106614W WO 2020237919 A1 WO2020237919 A1 WO 2020237919A1
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layer
organic light
emitting diode
diode display
display device
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郝鹏
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to a display panel, in particular to an organic light emitting diode display device and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • RGB composed of three primary color pixels such as red (Red, R), green (Green, G), blue (Blue, B) in a side by side manner (Side by Side) OLED technology and white OLED (White OLED) plus color filter (CF) technology are two major categories.
  • the products are mainly divided into small-sized mobile phones, tablet computer (Pad) screens and larger-sized TVs (Television, TV) screen, etc.
  • the cathode of Top OLED uses a thinner transparent metal to connect to the circuit edge of the screen. Due to the need to take into account the transmittance, the thickness of the transparent cathode is relatively thin, resulting in poor conductivity. When the screen size is large, because the center area of the screen is far from the electrode interface, the long-distance current transmission will increase the cathode partial pressure, which causes a difference in the number of carriers injected into the OLED element at the edge of the screen and the center of the screen.
  • One of the current methods is the thin film transistor (Thin Film Transistor) under the top-emitting OLED device.
  • Transistor (thin film transistor) circuit is added with auxiliary wires.
  • adding an auxiliary electrode below the pixel is not conducive to the flatness of the pixel surface.
  • the prior art display device shown in FIG. 1 is a large OLED display device with a length of 130 cm and a width of 90 cm.
  • the electrode interface 1 is arranged around the screen 2.
  • the central area of the screen 3 Due to the distance from the electrode interface 1, the long-distance current transmission will increase the cathode partial pressure, which will cause the difference in the number of carriers injected into the OLED element at the edge of the screen 2 and the center area of the screen 3. On the one hand, it will cause the screen
  • the brightness of the central area 3 is relatively dark, on the other hand, it will increase the problem of energy consumption.
  • the purpose of the present disclosure is to provide an organic light emitting diode display device and a manufacturing method thereof, which can solve the problems in the prior art.
  • an organic light emitting diode display device which includes: a substrate, the substrate including a substrate; a thin film transistor circuit layer is provided on the substrate, and the thin film transistor circuit layer has a control At least one groove is provided on the thin film transistor circuit layer, the bottom of the groove is provided with an electron transport layer, and an auxiliary cathode layer is filled in the groove; an anode layer is provided on the thin film transistor circuit A light-emitting layer is uniformly provided on the anode layer, and the electron transport layer is also provided on the light-emitting layer; and a cathode layer covers the electron transport layer and the auxiliary cathode layer.
  • the auxiliary cathode layer is filled in the groove by an inkjet printing device.
  • the auxiliary cathode layer is a nano-silver paste material.
  • the material of the anode layer is selected from one of indium tin oxide, indium zinc oxide, gold, platinum, and silicon.
  • the material of the anode layer is selected from at least two of indium tin oxide, indium zinc oxide, gold, platinum, and silicon materials.
  • the electron transport layer covers the light-emitting layer and the bottom of the groove by evaporation.
  • the cathode layer is covered on the electron transport layer and the auxiliary cathode layer by evaporation.
  • the present disclosure provides a method for manufacturing an organic light emitting diode display device, including the following steps: providing a substrate, the substrate including a substrate; fabricating a thin film transistor circuit layer on the substrate, the thin film transistor circuit layer having a control Circuit; at least one groove is made on the thin film transistor circuit layer, the bottom of the groove covers the electron transport layer, and an auxiliary cathode layer is filled in the groove; an anode layer is made on the thin film transistor circuit layer ; Uniformly fabricate a light-emitting layer on the anode layer, fabricate the electron transport layer on the light-emitting layer; and cover a cathode layer on the electron transport layer and the auxiliary cathode layer.
  • the auxiliary cathode layer is filled in the groove by an inkjet printing device, and the auxiliary cathode layer is made of nano-silver paste material.
  • the material of the anode layer is selected from one of indium tin oxide, indium zinc oxide, gold, platinum, and silicon.
  • the electron transport layer covers the light-emitting layer and the bottom of the groove by evaporation
  • the cathode layer covers the electron transport layer and the bottom of the groove by evaporation.
  • the auxiliary cathode layer covers the electron transport layer and the bottom of the groove by evaporation.
  • the organic light emitting diode display device and the manufacturing method thereof of the present disclosure have the advantages of avoiding the problem of short circuit caused by the excessive complexity of the thin film transistor circuit layer, ensuring the flatness of the pixel surface, and avoiding breakdown of the electron transport layer Brought uncontrollable factors, thereby improving the yield of the product.
  • FIG. 1 is a schematic diagram of the structure of an organic light emitting diode display device provided in the prior art.
  • FIG. 2 is a schematic top view of a groove substrate of an organic light emitting diode display device provided by an embodiment of the present invention.
  • FIG. 3 is a schematic cross-sectional view of the grooved substrate of the organic light emitting diode display device provided by an embodiment of the present invention along the direction A1-A1.
  • FIG. 4 is a schematic diagram of a structure of basically printing a light-emitting layer in a groove provided by an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of the structure of an evaporated electron transport layer provided by an embodiment of the present invention.
  • Fig. 6 is a schematic structural diagram of a printing auxiliary cathode provided by an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of an organic light emitting diode display device provided by an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of technical features indicated, thereby limiting the terms “first” and “The feature of “second” may explicitly or implicitly include one or more of the features.
  • “plurality” means two or more than two, unless otherwise specifically defined.
  • the organic light emitting diode pixels of this embodiment can be integrated in a display device, and the display device can be applied to products such as mobile terminals, tablet computers, or televisions.
  • the groove substrate structure includes: barrier 4, substrate 5 and thin film transistor circuit layer 6.
  • indium tin oxide Indium Tin oxide
  • a light-emitting layer 8 is formed on the prepared grooved substrate by the inkjet printing device 12, and the light-emitting layer 8 is uniformly arranged on the anode layer 7.
  • An electron transport layer 9 is fabricated on the light-emitting layer 8. As shown in FIG. 5, the electron transport layer 9 is covered on the light-emitting layer 8 by evaporation, and the groove 13 is also covered with the electron transport layer 9.
  • an auxiliary cathode layer 10 is formed on the electron transport layer 9 to fill the groove 13 by the inkjet printing device 12, and the auxiliary cathode layer 10 can be made of nano-silver paste materials.
  • a cathode layer 11 is fabricated by evaporation and covers the recessed substrate, so that the cathode layer 11 is connected to the auxiliary cathode layer 10 fabricated in FIG. 6.
  • the embodiment of the present invention also provides an organic light emitting diode display device.
  • the overall structure is shown in FIG. 7, and mainly includes: a substrate 5, an anode layer 7, and a cathode layer 11.
  • the substrate 5 includes a substrate, and a thin film transistor circuit layer 6. It is arranged on the substrate, and a control circuit is laid in the thin film transistor circuit layer 6.
  • a plurality of grooves 13 are formed on the thin film transistor circuit layer 6, an electron transport layer 9 is provided at the bottom of the groove 13, and nano silver paste is filled as an auxiliary cathode layer 10 on the electron transport layer 9 at the bottom of the groove 13 .
  • An anode layer 7 is also provided on the thin film transistor circuit layer 6.
  • the anode layer 7 holes need to be injected into the organic light-emitting diode (Organic Light-Emitting Diode, OLED), so it needs to have a higher work function.
  • the anode materials usually selected include indium tin oxide, indium zinc oxide, gold, platinum, silicon, etc., in this embodiment
  • the anode layer 7 is mainly composed of indium tin oxide (ITO).
  • the light-emitting layer 8 is arranged between the anode layer 7 and the electron transport layer 9.
  • the uppermost layer of the entire organic light-emitting semiconductor pixel is provided with a cathode layer 11, a cathode layer 11 and an auxiliary cathode layer 10 electrical connection to improve conductivity and narrow the gap of driving voltage.
  • the embodiment of the present invention can effectively avoid the use of thinner transparent metal for the cathode of the top-emitting OLED. While realizing the connection with the edge circuit of the screen, the transparency of the transparent cathode needs to be taken into consideration and the thickness of the transparent cathode is thin, resulting in the problem of poor conductivity.
  • the organic light emitting diode display device and the manufacturing method thereof provided by the present invention have the advantages of avoiding the problem of short circuit caused by the excessive complexity of the thin film transistor circuit layer, ensuring the flatness of the pixel surface, and avoiding the inconvenience caused by the breakdown of the electron transport layer. Control factors, thereby improving the yield of the product.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光二极管显示装置及其制作方法，所述有机发光二极管显示装置包括一基板（5）；一薄膜晶体管电路层（6）；在所述薄膜晶体管电路层（6）上设有至少一个凹槽（13），所述凹槽（13）的底部设有电子传输层（9），辅助阴极层（10）填充于所述至少一个凹槽（13）内；一阳极层（7）；一发光层（8）；一阴极层（11）覆盖在所述电子传输层（9）与所述辅助阴极层（10）上。

Description

有机发光二极管显示装置及其制作方法 技术领域
本揭示涉及显示面板，特别是涉及一种有机发光二极管显示装置及其制作方法。
 背景技术
有机发光二极管（Organic Light-Emitting Diode，OLED）以其自发光、全固态、高对比等优点，成为近年来最具潜力的新型显示器件。
目前OLED的应用方向有红色(Red，R)、绿色(Green，G)、蓝色(Blue，B)等三原色像素(pixel)以并排方式(Side by Side)所构成的RGB OLED技术，以及白光OLED(White OLED)加上滤光片(Color Filter，CF)的技术两大类。而产品主要分为小尺寸的手机、平板计算机(Pad)屏幕和较大尺寸的电视（Television, TV）屏幕等。
在大尺寸OLED应用方向，目前市场上所销售的产品集中在底部(Bottom)发光结构，阴极采用较厚的金属层，但随着分辨率的增长，Bottom OLED会受到开口率的限制，难以实现消费者对于高分辨率的需求。因此，大尺寸OLED产品也采用顶部发光OLED(Top OLED)结构的开发，以期望实现更高的分辨率。
Top OLED的阴极使用较薄的透明金属，实现与屏幕边缘电路的连接。由于需兼顾透过率，透明阴极厚度较薄，导致导电能力差。在屏幕尺寸较大时，屏幕中心区域由于离电极接口较远，长距离的电流传输会使阴极分压增大，从而造成屏幕边缘和屏幕中心OLED元件中注入的载流子数目有差异。
一方面会导致屏幕中心发暗；另一方面会增加能耗，因此需对Top OLED阴极进行改善，提升导电率，缩小驱动电压的差距。
目前的方法之一是在顶部发光OLED器件下方的薄膜晶体管(Thin Film Transistor，薄膜晶体管)电路中增设辅助导线，虽然该方法对阴极进行改善，提升导电率，缩小驱动电压的差距，但是这种方法也面临三个问题。
第一，将辅助阴极增设在薄膜晶体管电路层中会加剧底层薄膜晶体管电路层的复杂性，有可能会导致短路等问题。
第二，增设辅助电极至像素下方会不利于像素表面的平坦度。
第三，在使用辅助阴极时需要烧机(burn in)以击穿电子传输层，该过程的不可控程度较大，不利于器件的一致重复性。
具体的，如图1所示的现有技术的显示装置，长边130cm，宽边90cm的大型OLED显示装置，电极接口1设置在屏幕2的四周，在屏幕2尺寸较大时，屏幕中心区域3由于离电极接口1较远，长距离的电流传输会使阴极分压增大，从而造成屏幕2边缘和屏幕中心区域3的OLED元件中注入的载流子数目有差异，一方面会导致屏幕中心区域3的亮度较暗，另一方面会增加能耗的问题。
 技术问题
为解决上述现有技术的问题，本揭示的目的在于提供一种有机发光二极管显示装置及其制作方法，其能解决现有技术中的问题。
 技术解决方案
为解决上述问题，本揭示提供的一种有机发光二极管显示装置，包括：一基板，所述基板包括衬底；一薄膜晶体管电路层设置在所述衬底上，所述薄膜晶体管电路层具有控制电路；在所述薄膜晶体管电路层上设有至少一个凹槽，所述凹槽的底部设有电子传输层，辅助阴极层填充于所述凹槽内；一阳极层设在所述薄膜晶体管电路层上；一发光层均匀设在所述阳极层上，所述电子传输层也设在所述发光层上；以及一阴极层覆盖在所述电子传输层与所述辅助阴极层上。
于一实施例中，所述辅助阴极层通过喷墨打印装置填充于所述凹槽内。
于一实施例中，所述辅助阴极层为纳米银浆材料。
于一实施例中，所述阳极层的材料选自氧化铟锡，氧化铟锌 ，金，铂 ，硅材料其中一种。
于一实施例中，所述阳极层的材料选自氧化铟锡，氧化铟锌 ，金，铂 ，硅材料其中至少两种。
于一实施例中，所述电子传输层通过蒸镀的方式覆盖在所述发光层上与所述凹槽的底部。
于一实施例中，所述阴极层通过蒸镀的方式覆盖在所述电子传输层与所述辅助阴极层上。
本揭示提供的一种有机发光二极管显示装置的制作方法，包括以下步骤：提供一基板，所述基板包括衬底；在所述衬底上制作薄膜晶体管电路层，所述薄膜晶体管电路层具有控制电路；在所述薄膜晶体管电路层上制作至少一个凹槽，所述凹槽的底部覆盖电子传输层，并填充辅助阴极层于所述凹槽内；在所述薄膜晶体管电路层上制作阳极层；在所述阳极层上均匀制作发光层，在所述发光层上制作所述电子传输层；以及在所述电子传输层与所述辅助阴极层上覆盖阴极层。
于一实施例中，所述辅助阴极层通过喷墨打印装置填充于所述凹槽内，所述辅助阴极层为纳米银浆材料。
于一实施例中，所述阳极层的材料选自氧化铟锡，氧化铟锌 ，金，铂 ，硅材料其中一种。
于一实施例中，所述电子传输层通过蒸镀的方式覆盖在所述发光层上与所述凹槽的底部，所述阴极层通过蒸镀的方式覆盖在所述电子传输层与所述辅助阴极层上。
 有益效果
相较于现有技术，本揭示的有机发光二极管显示装置及其制作方法的优点在于，避免薄膜晶体管电路层过于复杂性导致短路的问题，保证了像素表面的平坦度，避免击穿电子传输层带来的不可控因素，从而提高了产品的良率。
 附图说明
图1为现有技术提供的有机发光二极管显示装置结构示意图。
图2为本发明实施例提供的有机发光二极管显示装置的凹槽基板俯视示意图。
图3为本发明实施例提供的有机发光二极管显示装置的凹槽基板沿A1-A1方向的剖面示意图。
图4为本发明实施例提供的在凹槽基本上打印发光层结构示意图。
图5为本发明实施例提供的蒸镀电子传输层的结构示意图。
图6为本发明实施例提供的打印辅助阴极的结构示意图。
图7为本发明实施例提供的有机发光二极管显示装置的结构示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量，由此限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征，在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
本实施例的有机发光二极管像素可以集成在显示装置中，该显示装置可以应用在移动终端、平板电脑、或电视等产品中。
本发明实施例提供的有机发光二极管显示装置的制作方法，该有机发光二极管显示装置制作方法包括以下步骤：
首先制作凹槽基板，如图2是凹槽基板的俯视图，图3为图2中A1-A1处凹槽基板的剖面示意图，凹槽基板结构包括：挡墙4，基板5和薄膜晶体管电路层6，薄膜晶体管电路层6中铺设控制电路，在薄膜晶体管电路层6上制作多个凹槽13，在薄膜晶体管电路层6上制作氧化铟锡(Indium Tin oxide，ITO)材料的阳极层7。
如图4所示，在制作好的凹槽基板上通过喷墨打印装置12制作一层发光层8，所述发光层8均匀设置在所述阳极层7上。
在发光层8上制作电子传输层9，如图5所示，电子传输层9通过蒸镀的方式覆盖在发光层8上，其中凹槽13中也覆盖上电子传输层9。
接着，如图6所示，通过喷墨打印装置12，在电子传输层9上制作辅助阴极层10填充凹槽13，辅助阴极层10可以选用纳米银浆材料来制作。
最后，如图7所示，通过蒸镀的方式制作一层阴极层11，覆盖在凹槽基板上，使得阴极层11与图6中制作的辅助阴极层10连接。
本发明实施例还提供了一种有机发光二极管显示装置，整体结构如图7所示，主要包括：基板5、阳极层7、以及阴极层11，其中基板5包括衬底 ，薄膜晶体管电路层6设置在所述衬底上，薄膜晶体管电路层6中铺设控制电路。
在薄膜晶体管电路层6上制作多个凹槽13，在所述凹槽13的底部有电子传输层9，在所述凹槽13底部的电子传输层9上填充纳米银浆作为辅助阴极层10。
在薄膜晶体管电路层6上还设有阳极层7，对于阳极层7，因为需要将空穴注入到有机发光二极管（Organic Light-Emitting Diode，OLED）中，因此需要其具有较高的功函数（work function），通常选用的阳极材料有氧化铟锡，氧化铟锌 ，金，铂 ，硅等等，本实施例中的阳极层7主要由氧化铟锡（ITO）组成，发光层8设置于阳极层7与电子传输层9之间，在整个有机发光半导体像素最上层设有阴极层11，阴极层 11与辅助阴极层10电连接，来提升导电率，缩小驱动电压的差距。
本发明实施例，能有效避免顶部发光 OLED的阴极使用较薄的透明金属，在实现与屏幕边缘电路的连接同时，由于需兼顾透过率，透明阴极厚度较薄，导致导电能力差的问题。
本发明提供的一种有机发光二极管显示装置及其制作方法的优点在于，避免薄膜晶体管电路层过于复杂性导致短路的问题，保证了像素表面的平坦度，避免击穿电子传输层带来的不可控因素，从而提高了产品的良率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (12)

  1. 一种有机发光二极管显示装置，其包括：
    一基板，所述基板包括衬底；
    一薄膜晶体管电路层设置在所述衬底上，所述薄膜晶体管电路层具有控制电路；
    在所述薄膜晶体管电路层上设有至少一个凹槽，所述凹槽的底部设有电子传输层，辅助阴极层填充于所述凹槽内；
    一阳极层设在所述薄膜晶体管电路层上；
    一发光层均匀设在所述阳极层上，所述电子传输层也设在所述发光层上；以及
    一阴极层覆盖在所述电子传输层与所述辅助阴极层上。
  2. 如权利要求1所述的有机发光二极管显示装置，其中所述辅助阴极层通过喷墨打印装置填充于所述凹槽内。
  3. 如权利要求2所述的有机发光二极管显示装置，其中所述辅助阴极层为纳米银浆材料。
  4. 如权利要求1所述的有机发光二极管显示装置，其中所述阳极层的材料选自氧化铟锡，氧化铟锌 ，金，铂 ，硅材料其中一种。
  5. 如权利要求1所述的有机发光二极管显示装置，其中所述阳极层的材料选自氧化铟锡，氧化铟锌 ，金，铂 ，硅材料其中至少两种。
  6. 如权利要求1所述的有机发光二极管显示装置，其中所述电子传输层通过蒸镀的方式覆盖在所述发光层上与所述凹槽的底部。
  7. 如权利要求1所述的有机发光二极管显示装置，其中所述阴极层通过蒸镀的方式覆盖在所述电子传输层与所述辅助阴极层上。
  8. 一种有机发光二极管显示装置的制作方法，其包括以下步骤：
    提供一基板，所述基板包括衬底；
    在所述衬底上制作薄膜晶体管电路层，所述薄膜晶体管电路层具有控制电路；
    在所述薄膜晶体管电路层上制作至少一个凹槽，所述凹槽的底部覆盖电子传输层，并填充辅助阴极层于所述凹槽内；
    在所述薄膜晶体管电路层上制作阳极层；
    在所述阳极层上均匀制作发光层，在所述发光层上制作所述电子传输层；以及
    在所述电子传输层与所述辅助阴极层上覆盖阴极层。
  9. 如权利要求８所述的有机发光二极管显示装置的制作方法，其中所述辅助阴极层通过喷墨打印装置填充于所述凹槽内，所述辅助阴极层为纳米银浆材料。
  10. 如权利要求８所述的有机发光二极管显示装置的制作方法，其中所述阳极层的材料选自氧化铟锡，氧化铟锌 ，金，铂 ，硅材料其中一种。
  11. 如权利要求８所述的有机发光二极管显示装置的制作方法，其中所述阳极层的材料选自氧化铟锡，氧化铟锌 ，金，铂 ，硅材料其中至少两种。
  12. 如权利要求８所述的有机发光二极管显示装置的制作方法，其中所述电子传输层通过蒸镀的方式覆盖在所述发光层上与所述凹槽的底部，所述阴极层通过蒸镀的方式覆盖在所述电子传输层与所述辅助阴极层上。
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