WO2020230893A1 - Dispositif et procédé de détection de chiralité, dispositif et procédé de séparation et dispositif de substance chirale - Google Patents

Dispositif et procédé de détection de chiralité, dispositif et procédé de séparation et dispositif de substance chirale Download PDF

Info

Publication number
WO2020230893A1
WO2020230893A1 PCT/JP2020/019479 JP2020019479W WO2020230893A1 WO 2020230893 A1 WO2020230893 A1 WO 2020230893A1 JP 2020019479 W JP2020019479 W JP 2020019479W WO 2020230893 A1 WO2020230893 A1 WO 2020230893A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
spin
chiral
chirality
layer
Prior art date
Application number
PCT/JP2020/019479
Other languages
English (en)
Japanese (ja)
Inventor
欣彦 戸川
宍戸　寛明
山本　浩史
Original Assignee
公立大学法人大阪
大学共同利用機関法人自然科学研究機構
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 公立大学法人大阪, 大学共同利用機関法人自然科学研究機構 filed Critical 公立大学法人大阪
Priority to EP20806276.0A priority Critical patent/EP3971562A4/fr
Priority to CN202080036002.XA priority patent/CN113826003A/zh
Priority to JP2021519505A priority patent/JPWO2020230893A1/ja
Priority to US17/611,347 priority patent/US11698360B2/en
Publication of WO2020230893A1 publication Critical patent/WO2020230893A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/007—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the electric dipolar moment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/023—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance where the material is placed in the field of a coil
    • G01N27/025—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance where the material is placed in the field of a coil a current being generated within the material by induction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
    • G01N27/82—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws
    • G01N27/83—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws by investigating stray magnetic fields
    • G01N27/84—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws by investigating stray magnetic fields by applying magnetic powder or magnetic ink
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/1284—Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Definitions

  • the present invention relates to a chirality detection device, a chirality detection method, a separation device, a separation method, and a chiral substance device.
  • chiral substances substances having a crystal structure with chirality and substances having a crystal structure with chirality
  • lactic acid C 3 H 6 O 3 has a chiral molecular structure
  • D-lactic acid and L-lactic acid which are in a mirror image relationship
  • quartz crystal of SiO 2
  • Quartz has a crystal structure with chirality. Quartz has a crystal structure in which the tetrahedron of SiO 4 shares a vertex, and focusing on how SiO 4 is connected, it forms a spiral in the elongation direction (c-axis) of the crystal, and the spiral is right-handed.
  • Crystal (right crystal) and left-handed crystal (left crystal) exist.
  • the crystal structure of the right crystal and the crystal structure of the left crystal are in a mirror image relationship.
  • the properties of a chiral substance may differ between a right-handed system and a left-handed system, and a method for detecting chirality of a chiral substance is known (see, for example, Patent Documents 1 and 2).
  • the test object is limited to the chiral substance or gaseous substance contained in the solution, and it is difficult to detect the chirality of the solid substance.
  • the present invention has been made in view of such circumstances, and provides a chirality detecting device capable of detecting the chirality of a chiral substance in various states.
  • the present invention is a clarity detection device for detecting the kirarity of a chiral substance, in which a first electrode and a second electrode for applying a voltage to a test object containing the chiral substance come into contact with the test object.
  • a spin detection layer, a power supply unit, and a control unit are provided so as to perform the test.
  • the power supply unit and the control unit are subjected to the test by applying a voltage between the first electrode and the second electrode.
  • the control unit is provided so as to form an electric field on an object, and the control unit detects a voltage generated in a direction crossing the direction of the electric field of the spin detection layer or a voltage generated between the spin detection layer and the test object.
  • the present invention provides a clarity detection device, which is provided in such a manner and is provided so as to detect the kirarity of the chiral substance based on the detected voltage.
  • the power supply unit and the control unit are provided so as to form an electric field in a test object containing a chiral substance by applying a voltage between the first electrode and the second electrode.
  • an electric field is formed in this way, spin-polarized electrons can be generated in a chiral material due to the chirality-induced spin selectivity (CISS) effect.
  • the CISS effect is an effect of spin polarization when an electron passes through a chiral polymer. It has been clarified by experiments conducted by the present inventors that the CISS effect also occurs in chiral substances other than polymers (for example, inorganic chiral crystals).
  • the control unit is provided so as to detect a voltage generated in a direction crossing the direction of the electric field of the spin detection layer provided in contact with the test object or a voltage generated between the spin detection layer and the test object. Be done. Since the detected voltage differs depending on the chirality of the chiral substance, the chirality of the chiral substance can be detected based on the detected voltage. This has been clarified by experiments conducted by the inventors of the present invention and the like.
  • the voltage generated in the spin detection layer is considered to be generated by the reverse spin Hall effect. Further, the voltage generated between the spin detection layer and the test object is considered to be generated by the same effect as the nonlocal spin valve.
  • the adverse effect of the CISS effect occurs in a chiral substance (for example, an inorganic chiral crystal).
  • a chiral substance for example, an inorganic chiral crystal.
  • the adverse effect of the reciprocity theorem is established, so that a voltage is generated in the chiral substance.
  • This voltage can be detected by using the voltage application unit. Since the detected voltage differs depending on the chirality of the chiral substance, the chirality of the chiral substance can be detected based on the detected voltage.
  • the chirality detection device operates in the reverse process by connecting the power supply unit and the control unit.
  • (A) is a photograph of a measuring device made of a left crystal as a test object, and (b) is a graph showing the result of a voltage detection experiment using this device.
  • (A) is a photograph of a measuring device made of a right crystal as a test object, and (b) is a graph showing the result of a voltage detection experiment using this device.
  • (A) is a photograph of a measuring device prepared by using a chiral molecular dispersion solution as a test object, and (b) is a graph showing the results of a voltage detection experiment using this device.
  • the clarity detection device of the present invention is a clarity detection device for detecting the kirarity of a chiral substance, and is a first electrode and a second electrode for applying a voltage to a test object containing the chiral substance, and the subject.
  • a spin detection layer provided so as to come into contact with an inspection object, a power supply unit, and a control unit are provided, and the power supply unit and the control unit apply a voltage between the first electrode and the second electrode.
  • the control unit is provided so as to form an electric field in the test object, and the control unit generates a voltage generated in a direction crossing the direction of the electric field of the spin detection layer or between the spin detection layer and the test object. It is characterized in that it is provided so as to detect a voltage and is provided so as to detect the chirality of the chiral substance based on the detected voltage.
  • the spin detection layer preferably contains a ferromagnet
  • the control unit is preferably provided so as to detect a voltage generated between the spin detection layer and the test object. Since the voltage detected by the control unit changes according to the spin polarization like a spin valve, it is possible to distinguish between a right-handed chiral substance and a left-handed chiral substance.
  • the present invention is a chirality detection device for detecting the chirality of a chiral substance, and the third electrode and the fourth electrode electrically connected to the test object containing the chiral substance come into contact with the test object.
  • the spin injection layer, the power supply unit, and the control unit are provided, the power supply unit and the control unit are provided so as to pass an electric current through the spin injection layer, and the control unit is a third electrode.
  • the fourth electrode is provided to detect the voltage generated in the direction of the chiral substance in the direction crossing the direction of the current, and the chiral substance is provided to detect the chirality based on the detected voltage.
  • a chirality detection device characterized by this is also provided.
  • a chirality detection method including a step of detecting a voltage generated between the subject and the subject and a step of detecting the chirality of the chiral substance based on the detected voltage.
  • the present invention is a separation device for separating a right-handed system and a left-handed system of a chiral substance, and includes a flow path provided so that a solution, liquid or gas containing the right-handed system and the left-handed system flows, and the above-mentioned A voltage application unit provided to form an electric field in the solution, the liquid or the gas flowing through the flow path, and a magnetic field provided in the solution, the liquid or the gas downstream of the electric field.
  • a separation device including a magnetic field application unit, which separates the right-handed system and the left-handed system by utilizing the interaction between the spin polarization of the chiral substance generated by the electric field and the magnetic field. Also provide.
  • the present invention comprises a step of applying a voltage to a solution, liquid or gas containing the chiral substance so that spin polarization occurs in the chiral substance including the right-handed system and the left-handed system, and the chiral substance in which the spin polarization occurs.
  • the right-handed system and the left-handed system include the step of applying a magnetic field so that a magnetic field is generated in the solution, the liquid or the gas, and utilizing the interaction between the spin polarization and the magnetic field.
  • a separation method characterized by separation is also provided.
  • FIGS. 1 to 5 are schematic perspective views of the chirality detection device of the present embodiment, respectively.
  • the clarity detection device 20 of the present embodiment is a clarity detection device for detecting the kirarity of a chiral substance, and is a voltage application electrode 3a, 3b for applying a voltage to a test object 9 containing the chiral substance.
  • a spin detection layer 4 provided in contact with the test object 9, a power supply unit 5, and a control unit 7 are provided, and the power supply unit 5 and the control unit 7 have a voltage between the voltage application electrodes 3a and 3b.
  • Is provided so as to form an electric field in the test object 9 by applying the voltage or spin detection layer 4 and the test object 9 generated in a direction crossing the direction of the electric field of the spin detection layer 4. It is characterized in that it is provided so as to detect the voltage generated between the two, and is provided so as to detect the chirality of the chiral substance based on the detected voltage.
  • a chiral substance is a substance having a molecular structure with chirality or a substance having a crystal structure with chirality.
  • the right-handed system and the left-handed system of chiral substances are enantiomers.
  • the chiral substance may be an inorganic substance, a polymer, an organic molecule, or a liquid crystal.
  • the chirality detection device 20 is a device that detects the chirality of a substance.
  • the chirality detection device 20 may be a device that detects whether or not the substance contained in the test object 9 has chirality.
  • the chirality detection device 20 is a device for determining whether the chiral substance contained in the test object 9 is a right-handed system, a left-handed system, or a chiral substance in which a right-handed system and a left-handed system are mixed (for example, a racemic body). You may.
  • the chirality detection device 20 may be a device that detects the ratio of the right-handed system to the left-handed system contained in the chiral substance.
  • the chirality detection device 20 may be a device for measuring the orientation / anisotropy of a chiral substance.
  • the test object 9 is a test target of the chirality detection device 20.
  • the test object 9 may be a solid, a liquid, or a gas.
  • the test object 9 may be a single crystal, a polycrystal, a microcrystalline material, or an agglomerate of powder. ..
  • the test object 9 is a chiral substance layer 2 as in the chirality detection device 20 shown in FIGS. 1 to 3.
  • the test object 9 When the test object 9 is a liquid, the test object 9 may be a solution containing chiral substance molecules or a liquid chiral substance, and a suspension in which particles of the chiral substance are dispersed in the liquid. It may be a liquid or a liquid crystal.
  • the test object 9 When the test object 9 is a gas, the test object 9 may be a gaseous chiral substance, a mixed gas containing the chiral substance, or a gas in which fine particles of the chiral substance are suspended. Good.
  • the test object 9 When the test object 9 is a liquid or a gas, the test object 9 is provided in a flow path 16 provided with voltage application electrodes 3a and 3b and a spin detection layer 4 as in the chirality detection device 20 shown in FIGS. (Solutions, liquids or gases 11 containing chiral substances) can be flowed or stored.
  • the power supply unit 5 is a portion that supplies electric power to the voltage application electrodes 3a and 3b. Further, the power supply unit 5 may be provided so as to supply electric power to the control unit 7. Further, the electric power supplied from the power supply unit 5 to the voltage application electrodes 3a and 3b may be controlled by the control unit 7.
  • the power supply unit 5 may be a battery or a power supply unit using electric power supplied from the electric power system. The power supplied from the power supply unit 5 to the voltage application electrodes 3a and 3b can be controlled by the control unit 7.
  • the control unit 7 is a part that controls the chirality detection device 20.
  • the control unit 7 may be a computer, a microcontroller, or a control board.
  • the control unit 7 can include a voltage detection circuit (voltage measurement units 6a, 6b, 6c) or a power adjustment circuit.
  • the voltage application electrodes 3a and 3b are electrodes for applying a voltage to the test object 9.
  • the voltage application electrodes 3a and 3b are provided so that an electric field is generated in the test object 9 by applying a voltage between the electrodes 3a and 3b.
  • spin-polarized electrons can be generated in the chiral substance contained in the test object 9 due to the chirality-induced spin selectivity (CISS) effect.
  • the CISS effect is an effect of spin polarization when an electron passes through a chiral polymer. Experiments conducted by the present inventors have revealed that the CISS effect also occurs in chiral substances other than polymers (for example, inorganic chiral crystals).
  • the voltage application electrodes 3a and 3b When the test object 9 is a solid, the voltage application electrodes 3a and 3b have the electrodes 3a on the side or upper surface of the test object 9 as in the chirality detection device 20 shown in FIGS. 1 to 3, for example. Electrodes 3b can be arranged.
  • the test object 9 is a liquid or a gas
  • the voltage application electrodes 3a and 3b are provided so that an electric field is generated in the flow path 16 as in the chirality detection device 20 shown in FIGS. Can be done.
  • the voltage application electrodes 3a and 3b may be plate-shaped electrodes, ring-shaped electrodes, or mesh-shaped electrodes.
  • the spin detection layer 4 is a layer that absorbs the spin of the spin polarization generated in the test object 9.
  • the spin detection layer 4 is provided so as to come into contact with the test object 9.
  • the material of the spin detection layer 4 can be a substance having a high spin flow-charge flow conversion efficiency.
  • the reverse spin Hall effect causes a charge flow in the spin detection layer 4.
  • the spin detection layer 4 can be provided as in the chirality detection device 20 shown in FIGS. 1, 2, 4, and 5.
  • the material of the spin detection layer 4 is preferably a spin absorption material having a large spin Hall angle.
  • a spin absorption material having a large spin Hall angle For example, substances with large spin-orbit interaction (Pt, W, etc.), topological insulators, (Weyl) semimetals, two-dimensional gas systems, hybrid films such as metals / oxides and metals / molecules, oxides, molecules, and dielectrics. Examples include bodies, semiconductors, and Rashba systems.
  • the material of the spin detection layer 4 may be a ferromagnetic material.
  • the spin polarization of the chiral substance contained in the test object 9 is between the spin detection layer 4 and the test object 9 like a spin valve.
  • the spin detection layer 4 has an anisotropic shape so as to be in a uniformly magnetized state.
  • the spin detection layer 4 can be provided like the chirality detection device 20 shown in FIG.
  • the spin detection layer 4 may be arranged between the voltage application electrodes 3a and 3b, for example, as in the chirality detection device 20 shown in FIGS. 1 and 4. Further, the spin detection layer 4 does not have to be arranged between the voltage application electrodes 3a and 3b as in the chirality detection device 20 shown in FIGS. 2, 3 and 5, for example.
  • the spin polarization generated in the chiral material of the test object 9 by using the voltage application electrodes 3a and 3b does not occur only in the chiral material between the electrodes 3a and 3b, but in the test object 9. Spin polarization is also generated in the chiral material in the part where the electric field is not generated. This was clarified by the experiments conducted by the present inventors.
  • the chirality detection device 20 can have voltage detection electrodes 8a to 8c.
  • the chirality detection device 20 shown in FIG. 1 has electrodes 8a and 8b provided so as to be able to detect a voltage in the x direction of the test object 9.
  • the chirality detection device 20 shown in FIG. 3 has an electrode 8c electrically connected to the test object 9, and detects the voltage between the spin detection layer 4 and the test object 9 using the electrode 8c. can do.
  • the voltage application electrodes 3a and 3b, the spin detection layer 4, the voltage detection electrodes 8a to 8c and the like can be formed by, for example, a vapor deposition method, a spray method, a coating method or the like.
  • the following method can be executed by controlling the chirality detection device 20 by the control unit 7. Further, the control unit 7 is provided so that the following methods can be executed. Further, the following method may be manually executed without using the control unit 7.
  • the detection method using the chirality detection device 20 shown in FIGS. 1, 2, 4 and 5 will be described.
  • the voltage measuring unit 6a or the control unit 7 is provided so as to be able to detect the voltage in the y direction of the spin detection layer 4.
  • the material of the spin detection layer 4 can be a material that converts spin polarization into a charge flow.
  • the material of the spin detection layer 4 is Pt, W, or the like.
  • a voltage is applied between the voltage application electrodes 3a and 3b to generate an electric field in the test object 9.
  • spin polarization can be generated in the chiral substance contained in the test object 9 due to the chirality-induced spin selectivity (CISS) effect.
  • the polarization direction of the spin polarization that occurs when the test object 9 contains a right-handed chiral substance is opposite to the polarization direction of the spin polarization that occurs when the inspection object 9 contains a left-handed chiral substance. It is considered to be.
  • the voltage measuring unit 6a or the control unit 7 is used to detect the voltage in the y direction of the spin detection layer 4. Since the spin detection layer 4 is provided so as to be in contact with the test object 9, the chiral substance contained in the test object 9 comes into contact with the spin detection layer 4, and the spin polarization of the chiral substance is spin-detected by the reverse spin Hall effect. Causes a charge flow in layer 4. Since the direction of spin polarization is opposite between the right-handed chiral substance and the left-handed chiral substance, it is considered that the direction of the charge flow caused by the spin detection layer 4 is also opposite and the direction of the electromotive force is opposite.
  • test object 9 it is included in the test object 9 by detecting the voltage in the y direction of the spin detection layer 4 using the voltage measuring unit 6a or the control unit 7 and comparing the direction and magnitude of the electromotive force with the discrimination standard. It is possible to determine whether the chiral substance is right-handed or left-handed.
  • a detection method using the chirality detection device 20 shown in FIG. 3 will be described.
  • a ferromagnetic material is used as the material of the spin detection layer 4.
  • the voltage measuring unit 6a or the control unit 7 is provided so as to be able to detect the voltage between the spin detection layer 4 and the test object 9. In this method, no magnetic field other than the magnetic field generated from the spin detection layer 4 is applied to the test object 9.
  • a voltage is applied between the voltage application electrodes 3a and 3b to generate an electric field in the test object 9.
  • an electric field is generated in this way, spin polarization can be generated in the chiral substance contained in the test object 9 due to the chirality-induced spin selectivity (CISS) effect.
  • CISS chirality-induced spin selectivity
  • the voltage between the spin detection layer 4 and the test object 9 is detected using the voltage measurement unit 6a or the control unit 7. Since the spin detection layer 4 made of a ferromagnet is provided so as to be in contact with the test object 9, the spin polarization of the chiral material is the spin detection layer according to the magnetization state of the ferromagnet, like a non-local spin valve. A electromotive force is generated between 4 and the test object 9. Since the spin polarization directions of the right-handed chiral material and the left-handed chiral material are opposite, the electromotive force generated between the spin detection layer 4 and the test object 9 is the right-handed chiral material and the left-handed chiral material. Is different from.
  • the voltage measurement unit 6a or the control unit 7 is used to detect the voltage between the spin detection layer 4 and the test object 9, and the direction and magnitude of the electromotive force are compared with the discrimination criteria to be tested. It is possible to determine whether the chiral substance contained in the object 9 is a right-handed system or a left-handed system.
  • the spin detection layer 4 is the spin injection layer 4, and the voltage application electrodes 3a and 3b are the electrodes 3a and 3b for detecting the voltage generated in the test object 9.
  • the configuration of the device is the same as that of the chirality detection device 20 described above.
  • the chirality detection device 20 of the present embodiment is a chirality detection device for detecting the chirality of a chiral substance, and is an electrode 3a and an electrode 3b electrically connected to a test object 9 containing the chiral substance, and a test object.
  • a spin injection layer 4 provided in contact with the spin injection layer 4, a power supply unit 5, and a control unit 7 are provided, and the power supply unit 5 and the control unit 7 are provided so as to allow an electric current to flow through the spin injection layer 4 to control.
  • the unit 7 is provided so as to detect a voltage generated in a direction crossing the direction of the current of the chiral substance using the electrodes 3a and 3b, and detects the chirality of the chiral substance based on the detected voltage.
  • the power supply unit 5 supplies electric power to the spin injection layer 4, the control unit 7 detects the voltage using the electrodes 3a and 3b, and detects the chirality of the chiral substance based on the detected voltage.
  • FIGS. 6 and 7 are schematic views of the separation device of the present embodiment.
  • the separation device 25 of the present embodiment is a separation device 25 for separating the right-hand system and the left-hand system of the chiral substance, and is provided so that a solution, liquid, or gas containing the right-hand system and the left-hand system flows.
  • the voltage application unit 12 provided to form an electric field in the liquid or the gas, and the solution, the liquid or the gas downstream of the electric field.
  • the right-handed system and the left-handed system are provided by providing a magnetic field application unit 13 provided so as to form a magnetic field, and utilizing the interaction between the spin polarization of the chiral substance generated by the electric field and the magnetic field. It is characterized by being separated.
  • the separation device 25 of the present embodiment is a device that separates the right-handed chiral substance 17 and the left-handed chiral substance 18 in a solution, a liquid, or a gas. Therefore, the solution, liquid, or gas before separation contains both the right-handed chiral substance 17 and the left-handed chiral substance 18.
  • the separation device 25 of the present embodiment includes a flow path 16 provided for flowing a solution, liquid, or gas 11 containing a chiral substance.
  • a flow path 16 provided for flowing a solution, liquid, or gas 11 containing a chiral substance.
  • voltage application electrodes 3a and 3b (voltage application unit 12) provided so as to generate an electric field in a solution, liquid or gas 11 containing a chiral substance are provided.
  • the voltage application electrodes 3a and 3b can be provided so that the direction of the generated electric field is parallel to the direction of the flow of the flow path 16.
  • the magnetic field application unit 13 is provided so as to form a magnetic field in the flow path 16 downstream of the electric field generated between the voltage application electrodes 3a and 3b.
  • the magnetic field application unit 13 can include, for example, power supply units 5a, 5b, 5c and coils 19, 19a, 19b.
  • the magnetic field application portions 13, 13a and 13b may be permanent magnets or minute magnets.
  • the direction of the magnetic field formed in the flow path 16 is the direction of the flow of the flow path 16, the direction of the electric field generated between the voltage application electrodes 3a and 3b, or the right hand. It can be provided so as to be parallel to the spin polarization direction of the system chiral substance 17 and the left-handed chiral substance 18.
  • the magnetic field application unit 13 can be provided as in the separation device 25 shown in FIG.
  • a coil 19 is provided so as to wind around the flow path 16, and a direct current is passed through the coil 19 by using the power supply unit 5b.
  • a magnetic field parallel to the flow direction can be generated in the flow path 16.
  • the magnetic field application units 13a and 13b can be provided as in the separation device 25 shown in FIG.
  • the magnetic field application portions 13a and 13b are provided so as to form a magnetic field in the flow path 16 by utilizing the leakage magnetic field.
  • the magnetic field application unit 13a includes the power supply unit 5b and the coil 19a, and is provided so as to form a leakage magnetic field in the flow path 16.
  • the magnetic field application unit 13b includes a power supply unit 5c and a coil 19b, and is provided so as to form a leakage magnetic field in the flow path 16.
  • the magnetic field formed by the magnetic field application unit 13a and the magnetic field formed by the magnetic field application unit 13b are located on the same flow path cross section.
  • the chiral material flowing in the magnetic field formed by the magnetic field application unit 13a flows through the flow path 16a, and the chiral material flowing in the magnetic field formed by the magnetic field application unit 13b flows through the flow path 16b. It is branched. Therefore, it is possible to suppress the mixing of the right-handed chiral substance 17 and the left-handed chiral substance 18 separated by using a magnetic field. Therefore, by recovering the chiral substances from the flow paths 16a and 16b, respectively, the right-handed chiral substances 17 and the left-handed chiral substances 18 can be recovered separately.
  • the chiral substance apparatus FIG. 8 is a schematic perspective view of the chiral substance apparatus of the present embodiment.
  • the chiral material device 30 of the present embodiment includes a chiral material layer 2, a first voltage application electrode 3a and a second voltage application electrode 3b provided so as to be able to form an electric field in the chiral material layer 2.
  • a spin detection layer 4 provided in contact with the chiral material layer 2 is provided, and the first voltage application electrode 3a and the second voltage application electrode 3b are for the first voltage application electrode 3a and the second voltage application.
  • At least one of the electrodes 3b is provided so as to input an input signal, and is provided so as to form an electric voltage in the chiral material layer 2 by inputting the input signal, and the spin detection layer 4 is provided according to the input signal. It is characterized in that the voltage generated in the direction across the electric field changes.
  • the chiral substance device 30 is a device that utilizes the characteristics of the chiral substance, and may be a transistor, a memory, or a logic element.
  • the chiral substance layer 2 is a layer containing a chiral substance.
  • the chiral substance layer 2 can be a layer mainly containing either a right-handed chiral substance or a left-handed chiral substance. Further, the chiral substance layer 2 may have a structure in which a layer made of a right-handed chiral substance and a layer made of a left-handed chiral substance are combined.
  • the chiral material layer 2 may be a single crystal, a polycrystal, a microcrystalline material, a liquid crystal, or an agglomerate of powder. Further, the chiral substance layer 2 may be a gel containing a chiral substance. Further, the chiral material layer 2 may be a conductor, a semiconductor, or an insulator.
  • the first voltage application electrode 3a and the second voltage application electrode 3b are electrodes for forming an electric field in the chiral material layer 2.
  • An electric field is formed in the chiral material layer 2 by applying a voltage between the first voltage application electrode 3a and the second voltage application electrode 3b.
  • the chiral substance device 30 may have a pair of voltage application electrodes 3a and 3b as in the device shown in FIG. 8, and may have a plurality of pairs of voltage application electrodes 3a and 3b.
  • the spin detection layer 4 is a layer that absorbs spins of spin polarization generated in the chiral material layer 2.
  • the spin detection layer 4 may be arranged between the voltage application electrodes 3a and 3b, for example, as in the chiral material device 30 shown in FIG. Further, the spin detection layer 4 does not have to be arranged between the voltage application electrodes 3a and 3b.
  • a plurality of spin detection layers 4 are arranged between the pair of voltage application electrodes 3a and 3b and the pair of adjacent voltage application electrodes 3a and 3b. May be good. This makes it possible to select the spin detection layer 4 that outputs the output signal.
  • the input unit 26 is provided so as to input an input signal to at least one of the voltage application electrodes 3a and 3b and form an electric field in the chiral material layer 2 between the voltage application electrodes 3a and 3b. Therefore, an electric field that changes according to the input signal can be formed in the chiral material layer 2.
  • the input unit 26 can be provided so that the direction of the electric field formed in the chiral material layer 2 changes according to the input signal.
  • the direction of the electric field of the chiral material layer 2 changes, the direction of the spin polarization of the chiral material layer 2 also changes. Therefore, when the spin detection layer 4 is provided as in the device 30 shown in FIG.
  • the direction of the voltage generated in the direction across the electric field of the spin detection layer 4 also changes according to the input signal.
  • the input signal can be converted into an output signal.
  • the resistivity of the Pt layer was 450 ⁇ cm, and the resistivity of the CrNb 3 S 6 single crystal was 650 ⁇ cm.
  • a photograph of the produced apparatus A is shown in FIG.
  • Wiring (1) and (2) are electrodes for applying voltage, and electrodes for applying voltage in the x direction of a CrNb 3 S 6 single crystal.
  • Wiring (5) and (6) are electrodes for voltage detection and are electrodes for detecting the voltage in the x direction of the CrNb 3 S 6 single crystal.
  • the wirings (4) and (8) are electrodes connected to the end of the Pt layer and detecting the voltage of the Pt layer in the y direction.
  • a device B as shown in FIG. 1 was produced using the test object as a non-chiral substance, WC (tungsten carbide).
  • WC tungsten carbide
  • the spin detection layer was a Pt layer having a size of 2 ⁇ m ⁇ 8.4 ⁇ m ⁇ 25 nm.
  • the resistivity of the Pt layer is 450 ⁇ cm, and the resistivity of the WC is 530 ⁇ cm.
  • a photograph of the produced apparatus B is shown in FIG.
  • the wirings (1) and (2) are electrodes for applying voltage and electrodes for applying voltage in the x direction of the WC.
  • the wirings (4) and (5) are electrodes for voltage detection and electrodes for detecting the voltage in the x direction of the WC.
  • the wirings (3) and (6) are electrodes connected to the end of the Pt layer and detecting the voltage of the Pt layer in the y direction.
  • Wiring (5) by changing the voltage applied between wiring (1) and (2) so that the current ((1) ⁇ (2)) flowing through the CrNb 3 S 6 single crystal of device A changes from -5mA to 5mA.
  • V xx CrNb 3 S 6 single crystal x-direction voltage
  • voltage V xy pt layer y-direction voltage
  • the resistance value R xx of the Cr Nb 3 S 6 single crystal and the resistance value R xy of the Pt layer were calculated from the measured values.
  • the current value when the current flowing through the CrNb 3 S 6 single crystal flows from the wiring (1) to the wiring (2) is positive, and the current value when the current flows from the wiring (2) to the wiring (1) is negative. ..
  • the voltage V xx was set to a positive voltage when the potential of the wiring (5) was higher than the potential of the wiring (6).
  • the voltage V xy is such that the potential of wiring (4) (on the right side facing the direction in which a positive current flows through CrNb 3 S 6 ) is on the left side facing the potential of wiring (8) (facing the direction in which a positive current flows through CrNb 3 S 6 ). ) Is higher than the positive voltage.
  • the voltage applied between the wires (1) and (2) is changed so that the current ((1) ⁇ (2)) flowing through the WC of the device B changes from -5 mA to 5 mA between the wires (4) and (5).
  • the voltage V xx (voltage in the x direction of the WC) and the voltage V xy (voltage in the y direction of the Pt layer) between the wirings (3) and (6) were measured. Further, the resistance value R xx of WC and the resistance value R xy of the Pt layer were calculated from the measured values.
  • the current value when the current flowing through the WC flows from the wiring (1) to the wiring (2) is positive, and the current value when the current flows from the wiring (2) to the wiring (1) is negative.
  • the voltage V xx was set to a positive voltage when the potential of the wiring (4) was higher than the potential of the wiring (5).
  • the voltage V xy is when the potential of the wiring (3) (on the right side facing the direction in which the positive current flows through the WC) is higher than the potential of the wiring (6) (on the left side facing the direction in which the positive current flows through the WC). The voltage was positive.
  • FIG. 11 (a) A graph showing a change in the measured voltage value V xx in the lateral direction is shown in FIG. 11 (a), and a graph showing a change in the calculated resistance value R xx is shown in FIG. 11 (b).
  • V xx changed according to the voltage applied between the wirings (1) and (2).
  • R xx was constant.
  • FIG. 12 (a) A graph showing the change in the measured voltage value V xy in the vertical direction of the Pt layer is shown in FIG. 12 (a), and a graph showing the change in the calculated resistance value R xy is shown in FIG. 12 (b).
  • V xy was not output and R xy was zero
  • Pt was applied when a voltage was applied so that a positive current flowed through CrNb 3 S 6.
  • a positive voltage V xy was generated in the layer, and when a voltage was applied so that a negative current flowed through CrNb 3 S 6 , a negative voltage V xy was generated in the Pt layer.
  • the voltage V xy and the current I flowing through CrNb 3 S 6 were in a proportional relationship. Further, in the manufactured apparatus A, R xy gradually increased as the current I flowing through CrNb 3 S 6 increased, and showed a slightly non-linear behavior.
  • the voltage V xy (voltage in the y direction of the Pt layer) was measured by changing the voltage application electrode using the device A. Specifically, as shown by the solid arrow shown in FIG. 13 (a), the voltage V xy between the wires (4) and (8) when a current is passed between the wires (5) and the wires (2) ( The voltage of the Pt layer in the y direction) was measured. Further, as shown by the dotted arrow shown in FIG. 13A, the voltage V xy (Pt layer) between the wirings (4) and (8) when a current is passed between the wirings (6) and the wirings (2). The voltage in the y direction) was measured. The resistance value R xy of the Pt layer was calculated from the voltage V xy .
  • the distance between the applied voltage electrodes (the distance through which the current flows in the CrNb 3 S 6 single crystal) is longer in the solid line arrow than in the dotted line arrow. Further, the plus / minus of the current I and the plus / minus of the voltage V xy are the same as the measurement using the device A described above.
  • FIG. 13 (b) is a graph showing a change in voltage V xy
  • FIG. 13 (c) is a graph showing a change in resistance value R xy .
  • the voltage V xy similar to the measurement result in the device A of FIG. 12 (a), when a voltage is applied so that a positive current flows through CrNb 3 S 6 , a positive voltage V xy is generated in the Pt layer, and CrNb 3 When a voltage was applied so that a negative current flowed through S 6 , a negative voltage V xy was generated in the Pt layer.
  • FIG. 14 (a) shows a photograph of the apparatus C manufactured by using a CrSi 2 bulk polycrystal.
  • Wiring (1) and (2) which are electrodes for applying voltage, are provided at both ends of the CrSi 2 bulk polycrystalline.
  • Two Pt layers are provided between the wirings (1) and (2), the wirings (3) and (5) are connected to both ends of the left Pt layer, and the wirings (4) and (6) are connected to both ends of the right Pt layer. ) was connected.
  • Wiring (3) by changing the voltage applied between the wiring (1) and (2) so that the current ((1) ⁇ (2)) flowing through the CrSi 2 bulk polycrystal of the device C changes from -21 mA to 21 mA.
  • the voltage V xx (voltage in the x direction of the CrSi 2 bulk polycrystal) between (4) and the voltage V xy (voltage in the y direction of the Pt layer) between the wirings (4) and (6) were measured.
  • the current value when the current flowing through the CrSi 2 bulk polycrystalline flows from the wiring (1) to the wiring (2) is positive, and the current value when the current flows from the wiring (2) to the wiring (1) is negative.
  • the voltage V xx was set to a positive voltage when the potential of the wiring (3) was higher than the potential of the wiring (4).
  • FIG. 14 (b) A graph showing the change in the measured voltage value V xx in the x direction is shown in FIG. 14 (b), and a graph showing the change in the measured voltage value V xy in the y direction of the Pt layer is shown in FIG. 14 (c).
  • the voltage value V xx changed according to the voltage applied between the wirings (1) and (2).
  • Voltage value V xy when CrSi 2 bulk polycrystalline voltage as positive current flows is applied becomes a negative voltage, when a voltage is applied to flow a negative current is CrSi 2 bulk polycrystal Plus It became the voltage of.
  • the voltage V xy and the current I flowing through the CrSi 2 bulk polycrystal had a negative proportionality constant.
  • FIG. 15A shows a photograph of the apparatus D manufactured by using NbSi 2 bulk polycrystal.
  • Wiring (1) and (2) which are electrodes for applying voltage, are provided at both ends of the NbSi 2 bulk polycrystalline.
  • Two Pt layers are provided between the wirings (1) and (2), the wirings (3) and (5) are connected to both ends of the left Pt layer, and the wirings (4) and (6) are connected to both ends of the right Pt layer. ) was connected.
  • Wiring (5) by changing the voltage applied between wirings (1) and (2) so that the current ((1) ⁇ (2)) flowing through the NbSi 2 bulk polycrystal of device D changes from -21 mA to 21 mA.
  • the voltage V xx (voltage in the x direction of the NbSi 2 bulk polycrystal) between (6) and the voltage V xy (voltage in the y direction of the Pt layer) between the wirings (4) and (6) were measured.
  • the current value when the current flowing through the NbSi 2 bulk polycrystalline flows from the wiring (1) to the wiring (2) is positive, and the current value when the current flows from the wiring (2) to the wiring (1) is negative.
  • the voltage V xx was set to a positive voltage when the potential of the wiring (5) was higher than the potential of the wiring (6).
  • FIG. 15 (b) A graph showing the change in the measured voltage value V xx in the x direction is shown in FIG. 15 (b), and a graph showing the change in the measured voltage value V xy in the y direction of the Pt layer is shown in FIG. 15 (c).
  • the voltage value V xx changed according to the voltage applied between the wirings (1) and (2).
  • Voltage value V xy when NbSi 2 bulk polycrystalline voltage as positive current flows is applied becomes a positive voltage, when a voltage is applied to flow a negative current to the NbSi 2 bulk polycrystal negative It became the voltage of.
  • the voltage V xy and the current I flowing through the NbSi 2 bulk polycrystal had a positive proportionality constant.
  • the reason why the direction of the electromotive force generated in the spin detection layer is reversed is that the polarization direction of the spin polarization state of the chiral material is reversed between the right-handed system and the left-handed system due to the chirality-induced spin selectivity (CISS) effect. Conceivable. Therefore, it is considered that the direction of the electromotive force of the spin detection layer generated by converting the spin current by the reverse spin Hall effect is also opposite between the right-handed system and the left-handed system.
  • CISS chirality-induced spin selectivity
  • the direction of the electromotive force generated in the spin detection layer is the chiral material regardless of the direction of the spin axis.
  • the CISS effect is established at the molecular level (or crystal level) of the chiral substance. From this, it is considered that the chiral substance in the solution, the liquid crystal which is the chiral substance, and the insulator which is the chiral substance can be similarly discriminated as right-handed or left-handed.
  • Second chirality detection experiment In the above-mentioned first chirality detection experiment and chirality discrimination experiment, a conductor was used for the chiral substance as the test object, but in the second chirality detection experiment, the left crystal which is an insulator was used as the test object. An experiment was conducted using the right crystal. The left crystal is a left-handed chiral substance having a left-handed spiral atomic arrangement in the crystal structure, and the right crystal is a right-handed chiral substance having a right-handed spiral atomic arrangement in the crystal structure. Since quartz is an insulator, no current flows through the chiral substance. Therefore, the measurement was performed using the adverse effect of the CISS effect. That is, a voltage is applied across the Pt layer to detect the voltage generated in the chiral substance.
  • FIG. 16A shows a photograph of the apparatus E manufactured by using the left crystal.
  • Wiring (1) and (2) which are electrodes for voltage detection, are provided at both ends of the left crystal.
  • a Pt layer was provided between the wirings (1) and (2), and the wirings (3) and (4) were connected to both ends of the Pt layer.
  • This Pt layer functions as a spin detection layer in the first chirality detection experiment, but functions as a voltage application electrode in the second chirality detection experiment using the adverse effect.
  • the voltage V yx (voltage in the x direction of the crystal) between the wirings (1) and (2) was measured by changing the voltage (pulse voltage) applied to the Pt layer using the wirings (3) and (4).
  • the current value when the current flowing through the Pt layer flows from the wiring (3) to the wiring (4) is positive, and the current value when the current flows from the wiring (4) to the wiring (3) is negative.
  • the voltage V yx is higher than the potential of the wiring (1) (on the right side facing the direction in which the positive current flows in the Pt layer) and the potential in the wiring (2) (on the left side facing the direction in which the positive current flows in the Pt layer). Sometimes it was a positive voltage.
  • FIG. 16 (b) A graph showing the change in the measured voltage value V yx in the x direction of the crystal is shown in FIG. 16 (b).
  • the voltage applied to the Pt layer is shown by the current value I (mA).
  • I the current value
  • the measured voltage value V yx generated in the left crystal and the voltage applied to the Pt layer had a negative proportionality constant.
  • the tendency of the voltage value V yx to change was the same as in the first chirality detection experiment and the chirality discrimination experiment.
  • FIG. 17A shows a photograph of the apparatus F manufactured by using the right crystal.
  • Wiring (1) and (2) which are electrodes for voltage detection, are provided at both ends of the right crystal.
  • a Pt layer was provided between the wirings (1) and (2), and the wirings (3) and (4) were connected to both ends of the Pt layer.
  • This Pt layer functioned as a spin detection layer in the first chirality detection experiment, but when the adverse effect is used, it functions as a voltage application electrode.
  • the voltage V yx (voltage in the x direction of the crystal) between the wirings (1) and (2) was measured by changing the voltage (pulse voltage) applied to the Pt layer using the wirings (3) and (4).
  • the current value when the current flowing through the Pt layer flows from the wiring (3) to the wiring (4) is positive, and the current value when the current flows from the wiring (4) to the wiring (3) is negative.
  • the voltage V yx is higher than the potential of the wiring (1) (on the right side facing the direction in which the positive current flows in the Pt layer) and the potential in the wiring (2) (on the left side facing the direction in which the positive current flows in the Pt layer). Sometimes it was a positive voltage.
  • FIG. 17 (b) A graph showing the change in the measured voltage value V yx in the x direction of the right crystal is shown in FIG. 17 (b).
  • the voltage applied to the Pt layer is shown by the current value I (mA).
  • I the current value
  • the measured voltage value V yx generated in the right crystal and the voltage applied to the Pt layer had a positive proportionality constant.
  • the tendency of the voltage value V yx to change was the same as in the first chirality detection experiment and the chirality discrimination experiment.
  • FIG. 18A shows a photograph of the device G.
  • three platinum electrodes are provided on a glass substrate, wirings (1) and (2) are connected to both ends of the upper platinum electrode, and wirings (3) and (4) are connected to both ends of the intermediate platinum electrode. Are connected, and wirings (5) and (6) are connected to both ends of the lower platinum electrode. Then, the chiral molecule dispersion solution is dropped on the substrate so as to overlap the three platinum electrodes.
  • the voltage applied between the wirings (2) and (6) is changed so that the current flowing through the chiral molecular dispersion solution of the apparatus G (the current flowing from the upper platinum electrode to the lower platinum electrode) changes from -100 ⁇ A to +100 ⁇ A.
  • the voltage V between the wirings (3) and (4) was measured.
  • the current value when the current flowing through the chiral molecular dispersion solution flows from the wiring (2) to the wiring (6) is positive, and the current value when the current flows from the wiring (6) to the wiring (2) is negative.
  • the voltage V is such that the potential of wiring (3) (on the right side facing the direction in which a positive current flows through the chiral molecular dispersion solution) is the potential of wiring (4) (on the left side facing the direction in which a positive current flows through the chiral molecular dispersion solution). ) Is higher than the positive voltage.
  • FIG. 18 (b) A graph showing the change in the measured voltage value V is shown in FIG. 18 (b).
  • the voltage value V changed according to the voltage applied between the wirings (2) and (6).
  • the voltage value V becomes a negative voltage when a voltage is applied so that a positive current flows through the chiral molecular dispersion solution, and becomes a positive voltage when a voltage is applied so that a negative current flows through the chiral molecular dispersion solution. became.
  • the voltage V and the current I flowing through the chiral molecular dispersion solution had a negative proportionality constant.
  • the tendency of the voltage value V to change was the same as in the first and second chirality detection experiments and the chirality discrimination experiment.

Abstract

Le dispositif de détection de chiralité de la présente invention sert à détecter la chiralité d'une substance chirale, le dispositif de détection de chiralité comprenant : une première électrode et une seconde électrode pour appliquer une tension à un matériau à tester qui comporte la substance chirale ; une couche de détection de spin disposée de façon à être en contact avec le matériau à tester ; un bloc d'alimentation ; et une unité de commande. Le bloc d'alimentation et l'unité de commande sont disposés de façon à former un champ électrique dans le matériau à tester par application d'une tension entre la première électrode et la seconde électrode. L'unité de commande est disposée de façon à détecter une tension générée dans une direction croisant la direction du champ électrique de la couche de détection de spin, ou une tension générée entre la couche de détection de spin et le matériau à tester, et est également conçue pour détecter la chiralité de la substance chirale sur la base de la tension détectée.
PCT/JP2020/019479 2019-05-16 2020-05-15 Dispositif et procédé de détection de chiralité, dispositif et procédé de séparation et dispositif de substance chirale WO2020230893A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP20806276.0A EP3971562A4 (fr) 2019-05-16 2020-05-15 Dispositif et procédé de détection de chiralité, dispositif et procédé de séparation et dispositif de substance chirale
CN202080036002.XA CN113826003A (zh) 2019-05-16 2020-05-15 手性检测装置、手性检测方法、分离装置、分离方法和手性物质装置
JP2021519505A JPWO2020230893A1 (fr) 2019-05-16 2020-05-15
US17/611,347 US11698360B2 (en) 2019-05-16 2020-05-15 Chirality detection device, chirality detection method, separation device, separation method, and chiral substance device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019092958 2019-05-16
JP2019-092958 2019-05-16

Publications (1)

Publication Number Publication Date
WO2020230893A1 true WO2020230893A1 (fr) 2020-11-19

Family

ID=73288894

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/019479 WO2020230893A1 (fr) 2019-05-16 2020-05-15 Dispositif et procédé de détection de chiralité, dispositif et procédé de séparation et dispositif de substance chirale

Country Status (5)

Country Link
US (1) US11698360B2 (fr)
EP (1) EP3971562A4 (fr)
JP (1) JPWO2020230893A1 (fr)
CN (1) CN113826003A (fr)
WO (1) WO2020230893A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024024512A1 (fr) * 2022-07-27 2024-02-01 Ｂｌｕｅ Ｉｎｄｕｓｔｒｉｅｓ株式会社 Dispositif de détection et dispositif d'analyse

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114486751B (zh) * 2022-02-11 2024-04-16 浙江树人学院（浙江树人大学） 一种基于拓扑绝缘体光电效应的手性分子探测器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005181071A (ja) * 2003-12-18 2005-07-07 New Industry Research Organization スピン波励振・検出装置、前記装置を用いた高周波信号処理装置及びカーボンナノチューブの構造評価装置
JP2005526207A (ja) * 2002-02-14 2005-09-02 アロイス・ヴォベン 風力タービン
WO2009075359A1 (fr) * 2007-12-13 2009-06-18 Public University Corporation Osaka Prefecture University Appareil et procédé de séparation d'isomères de substances chirales
JP2010527284A (ja) * 2007-04-17 2010-08-12 ダイナミック コネクションズ エルエルシー キラル体の分離および操作
US20140099238A1 (en) * 2012-10-08 2014-04-10 Waters Technologies Corporation Chiral Separation System
JP2015512159A (ja) * 2012-03-13 2015-04-23 イエダ リサーチ アンド ディベロップメント カンパニー リミテッド メモリーおよびロジックデバイスおよびその実行のための方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0211931D0 (en) 2002-05-23 2002-07-03 Univ Liverpool Methods & device utilizing adsorption of molecules at a surface or interface
US7466523B1 (en) * 2003-07-10 2008-12-16 Yingjian Chen Nanotube spin valve and method of producing the same
US10641843B2 (en) * 2009-03-26 2020-05-05 Biomimetics Technologies, Inc. Embedded crystal circuit for the detection of weak electrical and magnetic fields
JP5601976B2 (ja) * 2010-11-04 2014-10-08 国立大学法人埼玉大学 スピントロニクス装置及び論理演算素子
US8829900B2 (en) * 2011-02-08 2014-09-09 Infineon Technologies Ag Low offset spinning current hall plate and method to operate it
JP6202307B2 (ja) 2013-08-02 2017-09-27 国立研究開発法人産業技術総合研究所 キラリティ測定方法及びキラリティ測定装置
EP2982662A1 (fr) 2014-08-08 2016-02-10 Université de Strasbourg Procédé pour la résolution chirale et dispositif associé
US20160057859A1 (en) * 2014-08-21 2016-02-25 Juan José de Miguel Electron spin filter
US9564523B1 (en) * 2015-12-11 2017-02-07 International Business Machines Corporation Non-linear spin-orbit interaction devices and methods for current-to-spin conversion and amplification of spin-polarizations
WO2017221250A1 (fr) * 2016-06-23 2017-12-28 Yeda Research And Development Co. Ltd. Système et procédé destinés à être utilisés dans l'analyse de molécules chirales
JP6875673B2 (ja) 2016-07-19 2021-05-26 学校法人 中央大学 キラル化合物の検出方法
CN108447981B (zh) * 2018-02-05 2020-08-28 清华大学 双通道拓扑绝缘体结构、制备方法及产生量子自旋霍尔效应的方法
CN109187647A (zh) * 2018-10-29 2019-01-11 中山科立特光电科技有限公司 一种基于霍尔效应的手性分子检测模块
JP7284739B2 (ja) * 2020-09-14 2023-05-31 株式会社東芝 磁気センサ及び検査装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005526207A (ja) * 2002-02-14 2005-09-02 アロイス・ヴォベン 風力タービン
JP2005181071A (ja) * 2003-12-18 2005-07-07 New Industry Research Organization スピン波励振・検出装置、前記装置を用いた高周波信号処理装置及びカーボンナノチューブの構造評価装置
JP2010527284A (ja) * 2007-04-17 2010-08-12 ダイナミック コネクションズ エルエルシー キラル体の分離および操作
WO2009075359A1 (fr) * 2007-12-13 2009-06-18 Public University Corporation Osaka Prefecture University Appareil et procédé de séparation d'isomères de substances chirales
JP2015512159A (ja) * 2012-03-13 2015-04-23 イエダ リサーチ アンド ディベロップメント カンパニー リミテッド メモリーおよびロジックデバイスおよびその実行のための方法
US20140099238A1 (en) * 2012-10-08 2014-04-10 Waters Technologies Corporation Chiral Separation System

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
CLAUDIO FONTANESI, EYAL CAPUA, YOSSI PALTIEL, DAVID H. WALDECK, RON NAAMAN: "Spin-Dependent Processes Measured without a Permanent Magnet", ADVANCED MATERIALS, VCH PUBLISHERS, vol. 30, no. 41, 1 October 2018 (2018-10-01), pages 1707390, XP055647289, ISSN: 0935-9648, DOI: 10.1002/adma.201707390 *
F. J. JEDEMA ET AL., NATURE, vol. 416, 2002, pages 713
JOHN M. ABENDROTH, DOMINIK M. STEMER, BRIAN P. BLOOM, PARTHA ROY, RON NAAMAN, DAVID H. WALDECK, PAUL S. WEISS, PRAKASH CHANDRA MON: "Spin Selectivity in Photoinduced Charge-Transfer Mediated by Chiral Molecules", ACS NANO, AMERICAN CHEMICAL SOCIETY, vol. 13, no. 5, 28 May 2019 (2019-05-28), pages 4928 - 4946, XP055764726, ISSN: 1936-0851, DOI: 10.1021/acsnano.9b01876 *
See also references of EP3971562A4
T. KIMURA ET AL., PHYS. REV. LETT., vol. 98, 2007, pages 156601
T. KIMURA; Y. OTANI; T. SATO; S. TAKAHASHI; S. MAEKAWA: "Room Temperature Reversible Spin Hall Effect", ARXIV.ORG, CORNELL UNIVERSITY LIBRARY, 201 OLIN LIBRARY CORNELL UNIVERSITY ITHACA, NY 14853, 13 September 2006 (2006-09-13), 201 Olin Library Cornell University Ithaca, NY 14853, XP080251184, DOI: 10.1103/PhysRevLett.98.156601 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024024512A1 (fr) * 2022-07-27 2024-02-01 Ｂｌｕｅ Ｉｎｄｕｓｔｒｉｅｓ株式会社 Dispositif de détection et dispositif d'analyse

Also Published As

Publication number Publication date
EP3971562A1 (fr) 2022-03-23
US11698360B2 (en) 2023-07-11
EP3971562A4 (fr) 2023-06-07
US20220214308A1 (en) 2022-07-07
JPWO2020230893A1 (fr) 2020-11-19
CN113826003A (zh) 2021-12-21

Similar Documents

Publication Publication Date Title
JP6438532B2 (ja) スピンフィルタ構造体を含む磁気トンネル接合素子
WO2020230893A1 (fr) Dispositif et procédé de détection de chiralité, dispositif et procédé de séparation et dispositif de substance chirale
US9087593B2 (en) Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit
US11280856B2 (en) Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators
EP3683829A1 (fr) PROCÉDÉ DE FABRICATION D'UNE STRUCTURE EN COUCHES DE CORPS MAGNÉTIQUE ET DE BiSb, MÉMOIRE MAGNÉTORÉSISTIVE, ET SOURCE D'INJECTION DE SPIN PURE
US9786837B2 (en) Multibit self-reference thermally assisted MRAM
Zaffalon et al. Zero-dimensional spin accumulation and spin dynamics in a mesoscopic metal island
US20200350487A1 (en) Semiconductor device with asymmetrical pinned magnets, and method of manufacture
US10204678B2 (en) Multi-state magnetic memory device
US20170082697A1 (en) Spin hall effect magnetic structures
Gao et al. Enhancement of ferroelectric performance in PVDF: Fe3O4 nanocomposite based organic multiferroic tunnel junctions
Takahashi et al. Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance
Hung et al. Experimental observation of coupled valley and spin Hall effect in p‐doped WSe2 devices
KR20070048657A (ko) 스핀 민감성을 갖는 묽은 반도체를 포함하는 터널 접합배리어층
WO2021002115A1 (fr) Unité de génération de nombre aléatoire et système informatique
Numata et al. Scalable cell technology utilizing domain wall motion for high-speed MRAM
Smith et al. External field free spin Hall effect device for perpendicular magnetization reversal using a composite structure with biasing layer
Mancoff et al. Spin-current-induced magnetotransport in Co-Cu-Co nanostructures
Sun et al. Geometric factors in the magnetoresistance of n-doped InAs epilayers
Blon et al. Spin momentum transfer effects observed in electrodeposited Co/Cu/Co nanowires
JP7291345B2 (ja) キラル物質装置
JP6777364B2 (ja) 外部磁界の非存在下での、スピン・軌道トルクによる垂直磁化ナノ磁石のスイッチング
TWI546971B (zh) 全電控自旋場效電晶體
Sun et al. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer
Sun et al. Au/GaAs magnetoresistive-switch-effect devices fabricated by wet etching

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20806276

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021519505

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2020806276

Country of ref document: EP

Effective date: 20211216