WO2020228407A1 - Appareil de transport de charge et système à plasma associé - Google Patents

Appareil de transport de charge et système à plasma associé Download PDF

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Publication number
WO2020228407A1
WO2020228407A1 PCT/CN2020/079535 CN2020079535W WO2020228407A1 WO 2020228407 A1 WO2020228407 A1 WO 2020228407A1 CN 2020079535 W CN2020079535 W CN 2020079535W WO 2020228407 A1 WO2020228407 A1 WO 2020228407A1
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WO
WIPO (PCT)
Prior art keywords
terminal
heater
coupled
transfer device
charge transfer
Prior art date
Application number
PCT/CN2020/079535
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English (en)
Chinese (zh)
Inventor
刘建
韦刚
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Publication of WO2020228407A1 publication Critical patent/WO2020228407A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a device, specifically, a charge transfer device and related plasma system.
  • electrostatic chucks are widely used to support, fix and cool the wafer.
  • the electrostatic chuck will use a DC voltage to generate electrostatic attraction to the wafer to achieve a fixed effect.
  • the residual charge on the electrostatic chuck will also affect the wafer
  • the electrostatic adsorption force causes the sticking phenomenon, so that when the processed wafer is taken away, the electrostatic adsorption force will cause the wafer to shift and tilt, and even fail to take the wafer.
  • the present invention discloses a charge transfer device and a related plasma system to solve the problems in the background art, such as improper bonding of a wafer on an electrostatic chuck.
  • a charge transfer device applied to a plasma system includes a chamber and a lower electrode placed in the chamber, and the plasma system is configured to be opposed to The work piece on the lower electrode is processed, and the lower electrode includes an electrode and a heater, wherein the electrode is used to generate adsorption force to fix the work piece when the work piece is processed, and the heater is used for
  • a heat source is provided to the work piece through an AC power supply and an AC voltage provided by a filter device coupled between the AC power supply and the heater
  • the charge transfer A device for selectively transferring the charge on the heater the charge transfer device includes a first terminal and a second terminal, the first terminal is coupled between the AC power source and the heater , The second terminal is coupled to the reference voltage terminal.
  • a plasma system including a chamber.
  • the plasma system is used to process a work piece placed in the chamber and includes an AC power supply, a filter device, a lower electrode, and Charge transfer device.
  • the AC power supply is used to provide AC voltage.
  • the filtering device is coupled to the AC power source and used to filter the AC voltage.
  • the lower electrode is coupled to the AC power source and the filter device, and includes an electrode and a heater.
  • the electrode is used to generate adsorption force when processing the work piece to fix the work piece.
  • the heater is used for receiving the AC voltage filtered by the filtering device to provide a heat source.
  • the charge transfer device is coupled to the heater and is used to selectively transfer the charge on the heater, and the charge transfer device includes a first terminal and a second terminal.
  • the first terminal is coupled between the AC power source and the heater, and the second terminal is coupled to a reference voltage terminal.
  • FIG. 1 is a schematic diagram of a plasma system according to an embodiment of the invention.
  • FIG. 2A is a schematic diagram of the lower electrode according to an embodiment of the invention.
  • 2B is a schematic diagram of the ceramic layer in the lower electrode according to an embodiment of the invention.
  • 2C is a schematic diagram of the heating layer in the lower electrode according to an embodiment of the invention.
  • FIG. 3 is a schematic diagram of a charge transfer device according to an embodiment of the invention.
  • FIG. 4 is a schematic diagram of the operation of a charge transfer device according to an embodiment of the invention.
  • FIG. 5 is a schematic diagram of a plasma system according to another embodiment of the present invention.
  • first and second features are in direct contact with each other; and may also include
  • additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact.
  • present disclosure may reuse component symbols and/or labels in multiple embodiments. Such repeated use is based on the purpose of brevity and clarity, and does not in itself represent the relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms here such as “below”, “below”, “below”, “above”, “above” and similar, may be used to facilitate the description of the drawing
  • the relationship between one component or feature relative to another component or feature is shown.
  • these spatially relative terms also cover a variety of different orientations in which the device is in use or operation.
  • the device may be placed in other orientations (for example, rotated by 90 degrees or in other orientations), and these spatially-relative description words should be explained accordingly.
  • the plasma system When the plasma system needs to process the work piece (such as wafer), for example, when the work piece (such as wafer) is etched, the work piece (such as wafer) will be placed in the plasma system through the robot arm On top of the lower electrode.
  • the lower electrode usually has an electrostatic chuck.
  • the plasma system will transmit a DC voltage of about one thousand to five thousand volts to the electrostatic chuck, and the DC voltage on the electrostatic chuck will cause electrostatic adsorption to the work piece (such as wafer)
  • the force allows the work piece (such as wafer) to be fixed on the lower electrode during processing.
  • the plasma system When the processing is finished, the plasma system will perform de-chuck operation. In detail, the plasma system will transfer the reverse DC voltage to the electrostatic chuck to remove the charge in the lower electrode from the work piece ( Such as wafer) adsorption.
  • the invention discloses a charge transfer device applied to a plasma system and a related plasma system to avoid possible offsets when taking out a work piece (such as a wafer) after processing is completed.
  • FIG. 1 is a schematic diagram of a plasma system 1 according to an embodiment of the invention.
  • the plasma system 1 is used to process a work piece (such as a wafer).
  • the plasma system 1 may be an etching device that uses plasma to process a work piece (such as a wafer). Etching.
  • the plasma system 1 includes a chamber 10, a lower electrode 11 placed in the chamber 10, an AC power supply 12, a filter device 13 and a charge transfer device 14.
  • a work piece (such as a wafer) is placed on the lower electrode 11 for processing.
  • FIG. 2A is a schematic diagram of the lower electrode 11 according to an embodiment of the present invention.
  • the lower electrode 11 may optionally include a ceramic layer 21, a heating layer 22, and a base 23.
  • the ceramic layer 21 contains the aforementioned electrostatic chuck for fixing a work piece (such as a wafer) during processing; the heating layer 22 Used to control the temperature of work pieces (such as wafers).
  • the susceptor 23 has a cooling liquid inside, which is used to implement temperature control of the work piece (such as a wafer) together with the heating layer 22, and one end of the susceptor 23 is grounded.
  • the ceramic layer 21, the heating layer 22 and the base 23 are bonded with an adhesive.
  • the ceramic layer 21, the heating layer 22 and the base 23 are bonded with silica gel.
  • FIG. 2B is a schematic diagram of a ceramic layer 21 according to an embodiment of the present invention.
  • the ceramic layer 21 includes ceramics 211 and 213 and electrodes 212.
  • the electrode 212 When the plasma system 1 transmits a DC voltage of one thousand to five thousand volts to the electrode 212, the electrode 212 generates electrostatic adsorption force to fix the work piece (such as a wafer).
  • FIG. 2C FIG. 2C is a schematic diagram of the heating layer 22 according to an embodiment of the present invention.
  • the heating layer 22 includes a uniform heat plate 221, insulating layers 222 and 224 and a heater 223.
  • the uniform heat plate 221 is used to make the temperature distribution of the heating layer 22 more uniform.
  • the heater 223 generates heat as a heat source under the action of AC voltage.
  • the insulating layers 222 and 224 are used as high-temperature resistant protective layers to avoid damage to other accessories or devices in the plasma system 1 when the heat generated by the heater 223 is too high.
  • the insulating layers 222 and 224 include polyamide.
  • the uniform heat plate 221 and the insulating layer 222 are bonded with an adhesive.
  • the uniform heat plate 221 and the insulating layer 222 are bonded with silica gel.
  • the electrode 212 is applied with a direct current voltage, and the direct current voltage is applied to each layer in the ceramic layer 21 (including the ceramics 211 and 213 and the electrode 212) and each layer in the heating layer 22 (
  • the equivalent capacitance formed by the uniform heat plate 221, the insulating layers 222 and 224, and the heater 223) is continuously charged, and different polarization voltages are generated between the layers, and there are polarization charges.
  • the heating layer 22 uses more glue layers and thermal resistance resin materials, it has a larger thickness and a smaller capacitance.
  • the voltage division generated on the heater 223 is larger and the polarization charges are larger.
  • the charge transfer device 14 disclosed in the present invention can effectively remove the residual charge and avoid the above situation.
  • the AC power supply 12 is used to generate an AC voltage AC, and the filtered AC voltage AC′ is transmitted to the heater 223 through the filter device 13 coupled between the AC power supply 12 and the heater 223. 223 generates heat after receiving the alternating voltage AC'.
  • the filter device 13 includes an inductor. Since the lower electrode 11 is in a radio frequency environment when the work piece (such as a wafer) is processed, the inductance inside the filter device 13 can filter the radio frequency electric field on the electrode 212, preventing the radio frequency electric field from interfering with the AC power supply 12 Voltage AC.
  • the charge transfer device 14 is used to selectively transfer the charge on the heater 223.
  • the charge transfer device 14 includes a first terminal N1 and a second terminal N2.
  • the first terminal N1 can be coupled to the AC power supply 12 and the heater 223 between.
  • the first terminal N1 is coupled between the AC power source 12 and the filter device 13.
  • the second terminal N2 is coupled to the reference voltage terminal 15.
  • the reference voltage terminal 15 is a ground terminal.
  • the plasma system 1 should have other necessary devices and components to process work pieces (such as wafers).
  • the plasma system 1 should have an upper radio frequency power supply and a lower radio frequency power supply to excite the reaction gas in the chamber 10 into plasma to process a work piece (such as a wafer).
  • the lower electrode 11 also includes a thimble, which is used to control the raising of the thimble to lift the work piece (such as wafer) after the plasma system 1 finishes processing the work piece (such as wafer) to facilitate the robot arm to enter the chamber 10 Take out the work piece (such as wafer).
  • FIG. 1 only depicts devices and components related to the spirit of the present invention.
  • FIG. 3 is a schematic diagram of a charge transfer device 14 according to an embodiment of the invention.
  • the charge transfer device 14 includes an impedance 141 and a switch 142.
  • the impedance 141 is coupled between the first terminal N1 and the second terminal N2.
  • one terminal of the impedance 141 is coupled to the first terminal through the switch 142 N1, and the other end of the impedance 141 is coupled to the second end N2.
  • the impedance 141 may be a resistance.
  • the resistance value of the impedance 141 can be greater than a specific value, so that the AC current AC output by the AC power supply 12 will not be too large to cause damage to the device.
  • the resistance of the impedance 141 is greater than 200 kiloohms.
  • the electrode 212 cuts off the adsorption effect of the DC voltage.
  • the switch 142 is activated, and the residual interlayer polarization charge on the heater 223 can pass through the charge transfer device The path composed of 14 leads directly to the ground. Therefore, through the activation of the switch 142, the charge transfer device 14 conducts the residual charge on the heater 223 to the reference voltage terminal 15 through the impedance 141, which greatly reduces the residual amount of polarized charge on the heater 223.
  • the switch 142 is activated or not enables the charge transfer device 14 to selectively conduct the charge on the electrode 212 to the reference voltage terminal 15 through the impedance 141.
  • the activation timing of the switch 142 is not limited to the processing of the work piece (such as a wafer).
  • the electrode 212 is loaded with a DC voltage for adsorption.
  • the start switch 142 can also make the polarized charge on the heater 223 be at the negative phase voltage of the AC power supply 12. During this period, the path formed by the charge transfer device 14 is conducted to the reference voltage terminal 15.
  • the charge transfer device 14 may not include the switch 142. As a result, during the processing of the work piece (such as a wafer) or after the processing of the work piece (such as a wafer) is completed, The charge transfer device 14 can conduct the polarized charge on the heater 223 to the reference voltage terminal 15 through the impedance 141.
  • FIG. 4 is a schematic diagram of the operation of the charge transfer device 14 according to an embodiment of the invention.
  • the switch 142 is in an activated state.
  • the equivalent capacitance of the ceramic layer 21 is labeled C21
  • the equivalent capacitances of the uniform heat plate 221, the insulating layer 222, and the heater 223 in the heating layer 22 are labeled C221, C222, and C223, respectively.
  • the insulating layer 224 and the adhesive layer capacitance between the heating layer 22 and the base 23 can be shielded.
  • the overall equivalent thickness of the heating layer 22 becomes thinner.
  • the equivalent capacitance of the heating layer 22 will only be formed by the series connection of the capacitance C221, the capacitance C222 and the capacitance C223, the equivalent capacitance of the heating layer 22 will therefore become larger, and the partial voltage received by the heating layer 22 will become smaller.
  • the polarized charge formed by the DC voltage applied by the electrode 212 to the heater 223 will be reduced.
  • the charge transfer device 14 forms a discharge path between the heater 223 of the heating layer 22 and the ground terminal.
  • the electrode 212 cuts off the adsorption effect of the DC voltage. .
  • the residual polarized charge on the heater 223 can be directly connected to the reference voltage terminal, preferably the ground terminal, through the path formed by the charge transfer device 14.
  • the polarized charge on the heater 223 can also pass the charge during the negative phase voltage of the AC power supply 12.
  • the path formed by the transmission device 14 is conducted to the ground terminal.
  • FIG. 5 is a schematic diagram of a plasma system 5 according to another embodiment of the invention.
  • the plasma system 5 is used to process a work piece (such as a wafer).
  • the plasma system 5 may be an etching device that uses plasma to process a work piece (such as a wafer). ) Perform etching. As shown in FIG.
  • the plasma system 5 includes a chamber 50, a lower electrode 51 placed in the chamber 50, an AC power supply 52, a filter device 53 and a charge transfer device 54.
  • a work piece (such as a wafer) is placed on the lower electrode 51 for processing.
  • the plasma system 5 shown in FIG. 5 is roughly the same as the plasma system 1, the only difference is that the charge transfer device 54 includes a first terminal N1' and a second terminal N2', wherein the first terminal N1' is coupled to the filter device Between 53 and the heater 523 of the lower electrode 51, the second terminal N2 ′ is coupled to the reference voltage terminal 55. Similarly, in this embodiment, the reference voltage terminal 55 is a ground terminal.
  • the present invention discloses a charge transfer device and related plasma system.
  • the charge transfer device disclosed in the present invention can effectively shield the insulating layer at the bottom of the heater and the glue layer between the heating layer and the base. Capacitance, in other words, the overall equivalent thickness of the heating layer becomes thinner, and the equivalent capacitance of the heating layer becomes larger, and the partial pressure received by the heating layer becomes smaller.
  • the charge transfer device disclosed in the present invention is used to form a discharge path between the heater and the ground terminal. In this way, the polarized charge on the heater can be directly connected to the ground through the path formed by the charge transfer device. Effectively reduce the risk of offset when the ejector pin of the lower electrode lifts the work piece (such as a wafer).

Abstract

La présente invention concerne un appareil de transport de charge appliqué sur un système à plasma. Le système à plasma comprend une chambre et une électrode inférieure prévue dans la chambre, et le système à plasma est utilisé pour traiter une pièce placée sur l'électrode inférieure. L'électrode inférieure comprend une électrode et un dispositif de chauffage, l'électrode étant utilisée pour générer, lorsque la pièce est en cours de traitement, une force d'aspiration pour fixer la pièce ; et le dispositif de chauffage est utilisé pour fournir, lorsque la pièce est en cours de traitement, une source de chaleur pour la pièce de travail au moyen d'une source de courant alternatif et au moyen d'une tension alternative fournie par un appareil de filtrage couplé entre la source d'alimentation en courant alternatif et le dispositif de chauffage. L'appareil de transport de charge est utilisé pour transférer sélectivement des charges sur un dispositif de chauffage, et l'appareil de transport de charge comprend un premier point d'extrémité et un second point d'extrémité, le premier point d'extrémité étant couplé entre une source d'alimentation en courant alternatif et le dispositif de chauffage, et le second point d'extrémité étant couplé à une extrémité de tension de référence.
PCT/CN2020/079535 2019-05-14 2020-03-16 Appareil de transport de charge et système à plasma associé WO2020228407A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910398362.3 2019-05-14
CN201910398362.3A CN111952231A (zh) 2019-05-14 2019-05-14 电荷传输装置及相关等离子体系统

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WO2020228407A1 true WO2020228407A1 (fr) 2020-11-19

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Publication number Priority date Publication date Assignee Title
CN113699494B (zh) * 2021-08-30 2023-04-14 北京北方华创微电子装备有限公司 预处理腔室、半导体的预处理方法、加工设备及方法

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CN101278385A (zh) * 2004-11-04 2008-10-01 株式会社爱发科 静电吸盘装置
CN101872733A (zh) * 2009-04-24 2010-10-27 中微半导体设备(上海)有限公司 感测和移除被加工半导体工艺件的残余电荷的系统和方法
US20160276199A1 (en) * 2015-03-16 2016-09-22 Disco Corporation Decompression processing apparatus
CN109285755A (zh) * 2017-07-19 2019-01-29 东京毅力科创株式会社 等离子体处理装置
CN208478311U (zh) * 2018-07-26 2019-02-05 北京北方华创微电子装备有限公司 静电卡盘及反应腔室

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TW201041063A (en) * 2009-05-15 2010-11-16 Advanced Micro Fab Equip Inc System and method of sensing and removing residual charge from a micro-machined wafer
CN102044466B (zh) * 2009-10-12 2013-03-27 北京北方微电子基地设备工艺研究中心有限责任公司 一种静电卡盘及其残余电荷的消除方法
JP6081292B2 (ja) * 2012-10-19 2017-02-15 東京エレクトロン株式会社 プラズマ処理装置
KR102137617B1 (ko) * 2012-10-19 2020-07-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101278385A (zh) * 2004-11-04 2008-10-01 株式会社爱发科 静电吸盘装置
CN101872733A (zh) * 2009-04-24 2010-10-27 中微半导体设备(上海)有限公司 感测和移除被加工半导体工艺件的残余电荷的系统和方法
US20160276199A1 (en) * 2015-03-16 2016-09-22 Disco Corporation Decompression processing apparatus
CN109285755A (zh) * 2017-07-19 2019-01-29 东京毅力科创株式会社 等离子体处理装置
CN208478311U (zh) * 2018-07-26 2019-02-05 北京北方华创微电子装备有限公司 静电卡盘及反应腔室

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CN111952231A (zh) 2020-11-17
TW202109681A (zh) 2021-03-01

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