WO2020224103A1 - 光刻胶 - Google Patents

光刻胶 Download PDF

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Publication number
WO2020224103A1
WO2020224103A1 PCT/CN2019/102512 CN2019102512W WO2020224103A1 WO 2020224103 A1 WO2020224103 A1 WO 2020224103A1 CN 2019102512 W CN2019102512 W CN 2019102512W WO 2020224103 A1 WO2020224103 A1 WO 2020224103A1
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Prior art keywords
photoresist
photoinitiator
resin
light
reaction
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French (fr)
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饶夙缔
陈孝贤
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds

Definitions

  • the present invention relates to the field of display technology, and in particular to a photoresist.
  • Thin Film Transistor Liquid Crystal Display has many advantages such as thin body, power saving, and no radiation, and has been widely used.
  • Most of the liquid crystal displays on the current market are backlight liquid crystal display devices, which include a liquid crystal display panel and a backlight module.
  • a liquid crystal display panel is composed of a color filter (CF) substrate, a TFT array substrate, a liquid crystal (LC) sandwiched between the color filter substrate and the TFT array substrate, and a sealant (Sealant).
  • the CF substrate is the main device used by the LCD to achieve color display, and its basic composition usually includes: a glass substrate, a black matrix (Black Matrix, BM), a color filter layer, and so on.
  • Photolithography technology is a common process in the LCD industry, and photoresist is a necessary material for the photolithography process, which can undergo cross-linking curing or degradation reactions under the irradiation of light beams. Since the photoresist has the characteristics of not being corroded by the etching solution after the photo-crosslinking and curing reaction, it is often used in the patterning etching process of the display panel, and it can also be retained as a direct material in the panel, such as the CF substrate side
  • the composition of the photoresist usually includes at least one resin, monomer, photoinitiator, and solvent.
  • the process of photoresist pattern formation is: irradiate the photoresist with ultraviolet light in the exposure stage, so that the photoinitiator in it generates free radicals, and promotes the crosslinking reaction of monomer or resin in the light-receiving area After the subsequent development process, it is retained, but the area not irradiated by the ultraviolet light is dissolved by the developer during the subsequent development process, thereby forming the desired photoresist pattern.
  • ordinary photoresist usually has a thick film layer and the presence of some light-absorbing particles (such as carbon black in black matrix photoresist, color pigments in color photoresist), resulting in the entire light
  • some light-absorbing particles such as carbon black in black matrix photoresist, color pigments in color photoresist
  • the degree of ultraviolet light received by the resist film layer in its thickness direction during the exposure process is different, which makes the degree of reaction between the surface layer and the bottom layer inconsistent.
  • These photoresist patterning process problems will further reduce the quality of LCD.
  • the purpose of the present invention is to provide a photoresist which can solve the process problem caused by the inconsistency of the reaction between the surface layer and the bottom layer of the photoresist.
  • the present invention provides a photoresist, including resin, photoinitiator, polymer monomer, solvent and photoreactive particles;
  • the photoinitiator generates free radicals under light, and is used to initiate the photocrosslinking and curing reaction of polymer monomers to form high polymers;
  • the photoreactive particles selectively absorb light according to the wavelength of the light and release antioxidants, which are used to capture free radicals generated by the photoinitiator under illumination, thereby reducing the degree of reaction of polymer monomers.
  • the photoreactive particles generate antioxidants by selectively absorbing light and undergoing decomposition reactions, thereby releasing the generated antioxidants.
  • the photoreactive particles have a core-shell structure, including an outer shell and an inner core covered by the outer shell, the outer shell is a photoreactive polymer, the inner core is an antioxidant, and the outer shell of the photoreactive particle selectively absorbs light and It reacts and breaks down, releasing the antioxidants in the inner core.
  • the wavelength of light absorbed by the photoreactive particles is 300-400 nm.
  • the antioxidant is a phenolic antioxidant or an amine antioxidant.
  • the particle size of the photoreactive particles is 50-500 nm.
  • the resin is alkali-soluble resin, thermosetting resin or light-curing resin
  • the polymer monomer is a radical monomer, a cationic monomer or a combination of both;
  • the photoinitiator is a free radical photoinitiator, a cationic photoinitiator or a combination of both;
  • the solvent is an organic solvent or an aqueous solvent.
  • the resin is one or more combinations of phenolic resin, acrylic resin, polyvinyl alcohol cinnamate and silicone resin;
  • the polymer monomer is one or more combinations of acrylic monomers, vinyl monomers, vinyl ether monomers and epoxy monomers;
  • the photoinitiator is one or more combinations of ketoxime lipid photoinitiator, ⁇ -aminoketone photoinitiator, acetophenone photoinitiator, and aromatic ketone photoinitiator;
  • the solvent includes fatty alcohol, glycol ether, ethyl acetate, butyl acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether glycol ester, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetic acid One or more of ester, cyclohexanone, xylene, methylpyrrolidone, ethyl 3-ethoxypropionate isopropanol and n-butanol.
  • the photoresist also includes additives and colorants, the additives are one or more combinations of surfactants, silane coupling agents, and defoamers, and the colorants are pigments, dyes, or both. combination.
  • the weight percentages of the resin, photoinitiator, polymer monomer, solvent, and photoreactive particles in the photoresist are 5-15%, 0.2-5%, 5-8%, 80-90, respectively % And 0.1-5%.
  • the photoresist of the present invention includes resin, photoinitiator, polymer monomer, solvent, and photoreactive particles, wherein the photoinitiator generates free radicals under light for initiating polymer monomer
  • the body undergoes a photocrosslinking and curing reaction to form a high polymer.
  • the photoreactive particles selectively absorb light according to the wavelength of the light and release antioxidants, which are used to capture free radicals generated by the photoinitiator under light, thereby reducing polymerization.
  • the degree of reaction of the monomer in the photoresist layer can be used to control the degree of reaction of the photoresist film layer at different depths. During the exposure process, the reaction degree of the entire photoresist film layer can reach uniformity, which solves the problem of the photolithography process.
  • the taper is steep and the film surface is not equal due to the difference between the bottom layer and the rubber surface.
  • the first embodiment of the photoresist of the present invention includes resin, photoinitiator, polymer monomer, solvent, and photoreactive particles.
  • the photoinitiator generates free radicals under illumination, and is used to initiate the photocrosslinking and curing reaction of polymer monomers to form high polymers.
  • the photoreactive particles selectively absorb light according to the wavelength of the light and release antioxidants, which are used to capture free radicals generated by the photoinitiator under illumination, thereby reducing the degree of reaction of polymer monomers.
  • the present invention can selectively control the photoresist film during the exposure process by adding photoreactive particles to the photoresist.
  • the reaction degree of different depths of the layer makes the reaction degree of the entire photoresist film reach uniformity, thereby effectively solving the problem of uneven reaction of the photoresist surface and bottom layers.
  • the photoreactive particles generate antioxidants by selectively absorbing light and undergoing decomposition reactions, thereby releasing the generated antioxidants into the photoresist.
  • the antioxidant generated by the photoreactive particles under specific light has a dehydrophenolic structure, which has a higher ability to scavenge free radicals and can be used to inhibit photoresist The degree of response at different depths.
  • the wavelength of the light selectively absorbed by the photoreactive particles is 300-400 nm, and specifically may be 313 nm, 330 nm, 365 nm, 385 nm, etc., which is not further limited here. If the photoreactive particles absorb shorter wavelength light, such as 313nm, 330nm, they mainly act on the surface of the photoresist film; if they absorb longer wavelength light, such as 365nm, 385nm, etc., they mainly act on the photoresist. The bottom layer of the film.
  • the wavelength band of light absorbed by the photoreactive particles can be selected according to specific implementations, and is not further limited here.
  • the resin is an alkali-soluble resin, a thermosetting resin, or a photo-curing resin, which is used to maintain the chemical and mechanical properties of the photoresist.
  • the resin may be phenolic resin, acrylic resin, polyvinyl alcohol cinnamate, and One or more combinations of silicone resins.
  • the polymer monomer is a small molecule containing a polymerizable functional group, which is used to increase the degree of crosslinking, improve the flexibility of the film layer, and reduce the viscosity of the resin. It can be a free radical monomer or a cationic monomer, or The combination of free radicals and cationic monomers may specifically be one or more combinations of acrylic monomers, vinyl monomers, vinyl ether monomers and epoxy monomers.
  • the photoinitiator can be a free radical photoinitiator or a cationic photoinitiator, or a combination of a free radical photoinitiator and a cationic photoinitiator, for making the corresponding polymer monomer in the ultraviolet Radical polymerization or cationic polymerization can occur under light irradiation, and the photoinitiator can specifically be a ketoxime lipid photoinitiator, a-aminoketone photoinitiator, acetophenone photoinitiator, and aromatic ketone.
  • One or more combinations of photoinitiators and macroinitiators are examples of photoinitiators and macroinitiators.
  • the solvent may be one of an organic solvent or an aqueous solvent.
  • the solvent may include fatty alcohol, glycol ether, ethyl acetate, butyl acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether glycol ester, propylene glycol monomethyl ether, propylene glycol monomethyl ether At least one or more of acetate, cyclohexanone, xylene, methylpyrrolidone, ethyl 3-ethoxypropionate, isopropanol, and n-butanol.
  • it can also be other photoresist solvents, which is not further limited here.
  • the photoresist may further include additives, and the additives are one or more combinations of surfactants, silane coupling agents, and defoamers.
  • the photoresist may further include a colorant, and the colorant is a pigment, a dye, or a combination of both.
  • the pigment can be one or more of red pigment PR254, red pigment PR177, green pigment PG58, green pigment PG59, blue pigment PB15:6, purple pigment PV23, yellow pigment PY138, black pigment and other pigments.
  • the dye can be It is red dye, blue dye or yellow dye.
  • the weight percentages of the resin, photoinitiator, polymer monomer, solvent, and photoreactive particles in the photoresist are 5-15%, 0.2-5%, 5-8%, 80-90% and 0.1-5%.
  • the first embodiment of the photoresist of the present invention includes at least one kind of photoreactive particles, which can selectively absorb light of different wavelengths and decompose to generate antioxidants, which are used to capture the freedom of photoinitiators generated by light. Therefore, the reaction degree of the polymer monomer in the photoresist is reduced, and the reaction degree of the photoresist film layer is controlled at different depths, so that the reaction degree of the entire photoresist film layer is uniform during the exposure process. Solve the problem of steep taper and unequal film surface formed due to the difference in the reaction of the photoresist surface and bottom layer in the photolithography process
  • the second embodiment of the photoresist of the present invention is different in that the photoreactive particles have a core-shell structure, including a shell and a core covered by the shell, and the shell is a light
  • the inner core is an antioxidant
  • the outer shell of the photoreactive particles selectively absorbs light and reacts to be cracked, thereby releasing the antioxidant in the inner core.
  • the antioxidant is a phenolic antioxidant or an amine antioxidant.
  • the particle size of the photoreactive particles is 50-500 nm.
  • the specific wavelength band of light absorbed by the outer shell of the photoreactive particles can be 300-400nm, specifically 313nm, 330nm, 365nm, 385nm, etc., which is not further limited here, that is, under specific ultraviolet light irradiation,
  • the outer shell of the photoreactive particles is cracked to release the antioxidant in the inner core, thereby controlling the reaction inside the photoresist.
  • Other technical features are the same as the above-mentioned first embodiment, and will not be repeated here.
  • the second embodiment of the present invention includes at least one kind of photoreactive particles.
  • the photoreactive particles have a core-shell structure, the outer shell is a photoreactive polymer, and the inner core is an antioxidant.
  • the photoreactive polymer can selectively absorb different wavelengths. The light and cleavage of the polymer can release the antioxidant in the shell, which is used to capture the free radicals generated by the photoinitiator when exposed to light.
  • the shell of the photoreactive particle selectively absorbs light of different wavelengths and splits, thereby The antioxidant in the core is released to inhibit the photoinitiator from initiating the polymer monomer reaction, thereby controlling the degree of reaction of the photoresist film layer at different depths, and uniformizing the overall film layer reaction.
  • the photoresist of the present invention includes a resin, a photoinitiator, a polymer monomer, a solvent, and photoreactive particles, wherein the photoinitiator generates free radicals under light for initiating the polymer monomer
  • the photo-crosslinking and curing reaction occurs to form a polymer.
  • the photo-reactive particles selectively absorb light according to the wavelength of the light and release antioxidants, which are used to capture free radicals generated by the photoinitiator under light, thereby reducing the polymer
  • the degree of reaction of the monomer in turn, has the effect of controlling the degree of reaction of the photoresist film layer at different depths. During the exposure process, the degree of reaction of the entire photoresist film layer is uniform and consistent. The taper is steep and the film surface is inequality caused by the difference between the surface and bottom layers.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)

Abstract

一种光刻胶，包括树脂、光引发剂、聚合物单体、溶剂以及光反应粒子，其中，该光引发剂在光照下产生自由基，用于引发聚合物单体发生光交联固化反应形成高聚物，该光反应粒子根据光的波长对光进行选择性吸收并释放出抗氧化剂，用于捕捉光引发剂在光照下产生的自由基，从而降低聚合物单体的反应程度，进而达到控制光刻胶膜层不同深度的反应程度的作用，在曝光制程中使整个光刻胶膜层的反应程度达到均匀一致，解决在光刻工艺中由于光刻胶表底层反应差异而形成的taper偏陡、膜面不平等问题。

Description

光刻胶 技术领域
本发明涉及显示技术领域，尤其涉及一种光刻胶。
 背景技术
薄膜晶体管液晶显示器（Thin Film Transistor Liquid Crystal Display，TFT-LCD）具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的液晶显示器大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组（backlight module）。通常液晶显示面板由彩膜（Color Filter，CF）基板、TFT阵列基板、夹于彩膜基板与TFT阵列基板之间的液晶（Liquid Crystal，LC）及密封框胶（Sealant）组成。CF基板是LCD用来实现彩色显示的主要器件，其基本构成通常包括：玻璃基板、黑色矩阵（Black Matrix，BM）、彩色滤光层等等。
光刻技术是LCD行业的常见工艺制程，光刻胶则是光刻制程的必要材料，其在光束照射下，能够发生交联固化或者降解反应。由于光刻胶发生光交联固化反应后，具有不被蚀刻液侵蚀的特性，常将其用于显示面板的图案化蚀刻制程中，也可被作为直接材料保留在面板中，如CF基板侧的黑色矩阵、彩色滤光层RGB色阻、有机覆盖层（over coat，OC）及间隔物（photo spacer，PS）等，再如TFT阵列基板侧的有机绝缘平坦层（Polymer Film on Array ，PFA）等。现有光刻胶体系中，光刻胶的组成通常包括至少一种树脂、单体、光引发剂、溶剂。以负型光刻胶为例，光刻胶形成图案的过程为：在曝光阶段利用紫外光照射光刻胶，使其中的光引发剂产生自由基，促进受光区域单体或树脂发生交联反应而在后续的显影过程后被保留，而未受到紫外光照射的区域则在后续的显影过程中被显影液溶解，从而形成所需光刻胶图案。在此图案化过程中，普通光刻胶通常由于其膜层厚度较厚，以及一些吸光粒子（如黑色矩阵光刻胶中的炭黑，彩色光阻中的彩色颜料）的存在，导致整个光刻胶膜层在曝光过程中在其厚度方向上所接收到的紫外光照程度不同，使得表层和底层的反应程度不一致。进而引发一系列的制程问题，如膜面不平，图案边缘坡度（taper）过陡等，而这些光刻胶图案化制程问题则会进一步导致LCD品质降低。
 技术问题
本发明的目的在于提供一种光刻胶，可解决光刻胶表层和底层反应程度不一致而引起的制程问题。
 技术解决方案
为实现上述目的，本发明提供了一种光刻胶，包括树脂、光引发剂、聚合物单体、溶剂以及光反应粒子；
所述光引发剂在光照下产生自由基，用于引发聚合物单体发生光交联固化反应形成高聚物；
所述光反应粒子根据光的波长对光进行选择性吸收并释放出抗氧化剂，用于捕捉光引发剂在光照下产生的自由基，从而降低聚合物单体的反应程度。
所述光反应粒子通过对光进行选择性吸收并发生分解反应而生成抗氧化剂，从而释放出其所生成的抗氧化剂。
所述光反应粒子为核壳结构，包括外壳及由外壳包覆的内核，所述外壳为光反应聚合物，所述内核为抗氧化剂，所述光反应粒子的外壳对光进行选择性吸收并发生反应而裂解，从而释放出内核的抗氧化剂。
所述光反应粒子所吸收的光的波长为300-400nm。
所述抗氧化剂为酚类抗氧化剂或胺类抗氧化剂。
所述光反应粒子的粒径为50-500nm。
所述树脂为碱溶性树脂、热固型树脂或光固型树脂；
所述聚合物单体为自由基型单体、阳离子型单体或两者的组合；
所述光引发剂为自由基型光引发剂、阳离子型光引发剂或两者的组合；
所述溶剂为有机溶剂或水性溶剂。
所述树脂为酚醛树脂、丙烯酸树脂、聚乙烯醇肉桂酸酯及硅氧烷树脂中的一种或多种组合；
所述聚合物单体为丙烯酸酯类单体、乙烯基类单体、乙烯基醚类单体及环氧类单体中的一种或多种组合；
所述光引发剂为酮肟脂类光引发剂、a-胺基酮类光引发剂、苯乙酮系光引发剂及芳香酮类光引发剂中的一种或多种组合；
所述溶剂包括脂肪醇、乙二醇醚、乙酸乙酯、乙酸丁酯、甲乙酮、甲基异丁基酮、单甲基醚乙二醇酯、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、环已酮、二甲苯、甲基吡咯烷酮、3-乙氧基丙酸乙酯异丙醇及正丁醇中的一种或多种。
所述的光刻胶还包括添加剂及着色剂，所述添加剂为表面活性剂、硅烷偶联剂及消泡剂中的一种或多种组合，所述着色剂为颜料、染料或两者的组合。
所述树脂、光引发剂、聚合物单体、溶剂以及光反应粒子在所述光刻胶中的重量百分含量分别为5-15%、0.2-5%、5-8%、80-90%及0.1-5%。
 有益效果
本发明的有益效果：本发明的光刻胶包括树脂、光引发剂、聚合物单体、溶剂以及光反应粒子，其中，所述光引发剂在光照下产生自由基，用于引发聚合物单体发生光交联固化反应形成高聚物，所述光反应粒子根据光的波长对光进行选择性吸收并释放出抗氧化剂，用于捕捉光引发剂在光照下产生的自由基，从而降低聚合物单体的反应程度，进而达到控制光刻胶膜层不同深度的反应程度的作用，在曝光制程中使整个光刻胶膜层的反应程度达到均匀一致，解决在光刻工艺中由于光刻胶表底层反应差异而形成的taper偏陡、膜面不平等问题。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例进行详细描述。
本发明的光刻胶的第一实施例，包括树脂、光引发剂、聚合物单体、溶剂以及光反应粒子。
所述光引发剂在光照下产生自由基，用于引发聚合物单体发生光交联固化反应形成高聚物。
所述光反应粒子根据光的波长对光进行选择性吸收并释放出抗氧化剂，用于捕捉光引发剂在光照下产生的自由基，从而降低聚合物单体的反应程度。
需要说明的是：由于不同波段的光在光刻胶膜层中所能到达的深度不同，本发明通过在光刻胶中添加光反应粒子，可以在曝光制程中选择性的控制光刻胶膜层不同深度的反应程度，使整个光刻胶膜层反应程度达到均匀一致，进而有效解决光刻胶表底层反应不均的问题。
具体地，本实施例中，所述光反应粒子通过对光进行选择性吸收并发生分解反应而生成抗氧化剂，从而向所述光刻胶内释放出其所生成的抗氧化剂。
进一步地，本实施例中，所述光反应粒子在特定光照下所生成的抗氧化剂具有脱氢酚类结构，该脱氢酚结构具有较高的清除自由基的能力，可用于抑制光刻胶不同深度的反应程度。
具体地，所述光反应粒子所选择性吸收的光的波长为300-400nm，具体可为313nm、330nm、365nm、385nm等，此处不做进一步限定。所述光反应粒子若吸收较短波长的光，如313nm、330nm，则主要作用于光刻胶膜层表层；若吸收较长波长的光，如365nm、385nm等，则主要作用于光刻胶膜层底层。当然，所述光反应粒子所吸收光的波段可根据具体实施方式进行选择，此处不做进一步限定。
具体地，所述树脂为碱溶性树脂、热固型树脂或光固型树脂，用于维持光刻胶的化学和机械性能等，具体可为酚醛树脂、丙烯酸树脂、聚乙烯醇肉桂酸酯及硅氧烷树脂中的一种或多种组合。
具体地，所述聚合物单体为含有可聚合官能团的小分子，用于提升交联度，改善膜层柔韧性和降低树脂粘度等，可为自由基型单体或阳离子型单体，或自由基和阳离子单体的组合，具体可为丙烯酸酯类单体、乙烯基类单体、乙烯基醚类单体及环氧类单体中的一种或多种组合。
具体地，所述光引发剂可以为自由基型光引发剂或阳离子型光引发剂，或自由基型光引发剂和阳离子型光引发剂的组合，用于使相应的聚合物单体在紫外光的照射下可以发生自由基聚合或阳离子聚合反应，所述光引发剂具体可以为酮肟脂类光引发剂、a-胺基酮类光引发剂、苯乙酮系光引发剂、芳香酮类光引发剂以及大分子引发剂中的一种或多种组合。
具体地，所述溶剂可为有机溶剂或水性溶剂中的一种。所述溶剂可以包括脂肪醇、乙二醇醚、乙酸乙酯、乙酸丁酯、甲乙酮、甲基异丁基酮、单甲基醚乙二醇酯、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、环已酮、二甲苯、甲基吡咯烷酮、3-乙氧基丙酸乙酯异丙醇及正丁醇中的至少一种或多种。当然，也可为其他光刻胶用溶剂，此处不作进一步限定。
具体地，所述的光刻胶还可进一步包括添加剂，所述添加剂为表面活性剂、硅烷偶联剂及消泡剂中的一种或多种组合。
具体地，所述的光刻胶还可进一步包括着色剂，所述着色剂为颜料、染料或两者的组合。其中颜料可为红色颜料PR254、红色颜料PR177、绿色颜料PG58、绿色颜料PG59、蓝色颜料PB15：6、紫色颜料PV23、黄色颜料PY138、黑色颜料等其他颜料中的一种或多种，染料可为红色染料、蓝色染料或黄色染料等。
具体地，所述树脂、光引发剂、聚合物单体、溶剂以及光反应粒子在所述光刻胶中的重量百分含量分别为5-15%、0.2-5%、5-8%、80-90%及0.1-5%。
本发明的光刻胶的第一实施例，包含至少一种光反应粒子，该光反应粒子可选择性吸收不同波长的光并分解生成抗氧化剂，用于捕捉光引发剂受光照而产生的自由基，从而降低光刻胶内聚合物单体的反应程度，进而达到控制光刻胶膜层不同深度的反应程度的作用，在曝光制程中使整个光刻胶膜层的反应程度达到均匀一致，解决在光刻工艺中由于光刻胶表底层反应差异而形成的taper偏陡、膜面不平等问题
本发明的光刻胶的第二实施例，与上述第一实施例相比，其区别在于，所述光反应粒子为核壳结构，包括外壳及由外壳包覆的内核，所述外壳为光反应聚合物，所述内核为抗氧化剂，所述光反应粒子的外壳对光进行选择性吸收并发生反应而裂解，从而释放出内核的抗氧化剂。其中，所述抗氧化剂为酚类抗氧化剂或胺类抗氧化剂。所述光反应粒子的粒径为50-500nm。进一步地，所述光反应粒子的外壳所吸收光的特定波段可为300-400nm，具体可为313nm、330nm、365nm、385nm等，此处不做进一步限定，即在特定紫外光照射下，所述光反应粒子的外壳发生裂解，释放出内核的抗氧化剂，从而控制光刻胶内部的反应。其他技术特征均与上述第一实施例相同，在此不再赘述。
本发明的第二实施例，包含至少一种光反应粒子，该光反应粒子为核壳结构，外壳为光反应聚合物，内核为抗氧化剂，所述光反应聚合物为可选择性吸收不同波长的光并裂解的聚合物，从而可释放外壳内的抗氧化剂，用于捕捉光引发剂受光照产生的自由基，通过所述光反应粒子的外壳选择性吸收不同波长的光并发生裂解，从而释放出内核的抗氧化剂来抑制光引发剂引发聚合物单体反应，进而控制光刻胶膜层不同深度的反应程度，使整体膜层反应均一化。
综上所述，本发明的光刻胶包括树脂、光引发剂、聚合物单体、溶剂以及光反应粒子，其中，所述光引发剂在光照下产生自由基，用于引发聚合物单体发生光交联固化反应形成高聚物，所述光反应粒子根据光的波长对光进行选择性吸收并释放出抗氧化剂，用于捕捉光引发剂在光照下产生的自由基，从而降低聚合物单体的反应程度，进而达到控制光刻胶膜层不同深度的反应程度的作用，在曝光制程中使整个光刻胶膜层的反应程度达到均匀一致，解决在光刻工艺中由于光刻胶表底层反应差异而形成的taper偏陡、膜面不平等问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种光刻胶，包括树脂、光引发剂、聚合物单体、溶剂以及光反应粒子；
    所述光引发剂在光照下产生自由基，用于引发聚合物单体发生光交联固化反应形成高聚物；
    所述光反应粒子根据光的波长对光进行选择性吸收并释放出抗氧化剂，用于捕捉光引发剂在光照下产生的自由基，从而降低聚合物单体的反应程度。
  2. 如权利要求1所述的光刻胶，其中，所述光反应粒子通过对光进行选择性吸收并发生分解反应而生成抗氧化剂，从而释放出其所生成的抗氧化剂。
  3. 如权利要求1所述的光刻胶，其中，所述光反应粒子为核壳结构，包括外壳及由外壳包覆的内核，所述外壳为光反应聚合物，所述内核为抗氧化剂，所述光反应粒子的外壳对光进行选择性吸收并发生反应而裂解，从而释放出内核的抗氧化剂。
  4. 如权利要求1所述的光刻胶，其中，所述光反应粒子所吸收的光的波长为300-400nm。
  5. 如权利要求1所述的光刻胶，其中，所述抗氧化剂为酚类抗氧化剂或胺类抗氧化剂。
  6. 如权利要求3所述的光刻胶，其中，所述光反应粒子的粒径为50-500nm。
  7. 如权利要求1所述的光刻胶，其中，所述树脂为碱溶性树脂、热固型树脂或光固型树脂；
    所述聚合物单体为自由基型单体、阳离子型单体或两者的组合；
    所述光引发剂为自由基型光引发剂、阳离子型光引发剂或两者的组合；
    所述溶剂为有机溶剂或水性溶剂。
  8. 如权利要求7所述的光刻胶，其中，所述树脂为酚醛树脂、丙烯酸树脂、聚乙烯醇肉桂酸酯及硅氧烷树脂中的一种或多种组合；
    所述聚合物单体为丙烯酸酯类单体、乙烯基类单体、乙烯基醚类单体及环氧类单体中的一种或多种组合；
    所述光引发剂为酮肟脂类光引发剂、a-胺基酮类光引发剂、苯乙酮系光引发剂及芳香酮类光引发剂中的一种或多种组合；
    所述溶剂包括脂肪醇、乙二醇醚、乙酸乙酯、乙酸丁酯、甲乙酮、甲基异丁基酮、单甲基醚乙二醇酯、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、环已酮、二甲苯、甲基吡咯烷酮、3-乙氧基丙酸乙酯异丙醇及正丁醇中的一种或多种。
  9. 如权利要求1所述的光刻胶，还包括添加剂及着色剂，所述添加剂为表面活性剂、硅烷偶联剂及消泡剂中的一种或多种组合，所述着色剂为颜料、染料或两者的组合。
  10. 如权利要求1所述的光刻胶，其中，所述树脂、光引发剂、聚合物单体、溶剂以及光反应粒子在所述光刻胶中的重量百分含量分别为5-15%、0.2-5%、5-8%、80-90%及0.1-5%。
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CN1485200A (zh) * 2002-08-19 2004-03-31 ��ʿ��Ƭ��ʽ���� 包含微胶囊的预敏化平版印刷板
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