WO2020220442A1 - 辅助电极转移结构及显示面板的制作方法 - Google Patents

辅助电极转移结构及显示面板的制作方法 Download PDF

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Publication number
WO2020220442A1
WO2020220442A1 PCT/CN2019/091630 CN2019091630W WO2020220442A1 WO 2020220442 A1 WO2020220442 A1 WO 2020220442A1 CN 2019091630 W CN2019091630 W CN 2019091630W WO 2020220442 A1 WO2020220442 A1 WO 2020220442A1
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layer
electrode
auxiliary electrode
light
laser
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French (fr)
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方俊雄
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/603,298 priority Critical patent/US11527734B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • the invention relates to the field of display technology, in particular to an auxiliary electrode transfer structure and a manufacturing method of a display panel.
  • AMOLED display devices can be divided into bottom-emitting type (light emitting from the side of the array substrate) and top-emitting type (light emitting from the side of the package cover glass).
  • top-emission AMOLED display devices because the light source of the OLED needs to penetrate the OLED cathode, a transparent or semi-transparent cathode material must be used.
  • transparent cathode materials mostly use transparent oxides (TCO, Such as IZO), the thickness range of TCO is 100 Between nm and 500nm, the sheet resistance is between 5 ⁇ 30 ⁇ / ⁇ .
  • Translucent cathodes mostly use thin metals (such as silver, silver-magnesium alloys, etc.).
  • the thickness generally used is between 10nm and 200nm, and the sheet resistance is 1 to 5 ⁇ / ⁇ , the cathode with such a resistance value is only suitable for use in small-size display devices. If applied in a large-size display device, a voltage drop (IR drop), the farther away from the cathode voltage input terminal, the lower the brightness, resulting in uneven brightness of the display.
  • IR drop a voltage drop
  • support pillars Photo Spacer, PS
  • black matrix Black Matrix, BM
  • the black matrix and support pillars present a mesh or strip appearance, and then The auxiliary cathode metal is made above the supporting column. Because the black matrix and the supporting column are not in the light-emitting area, a thicker auxiliary cathode can be used to reduce the cathode resistance.
  • the auxiliary cathode can be in contact with the semi-transparent cathode of the OLED to reduce the resistance of the overall cathode, thereby improving the problem of uneven brightness of the OLED display panel caused by voltage drop.
  • the uniformity of the thickness of the black matrix and the support column is more difficult to control, and the glass deformation of the OLED backplane will be more serious, resulting in poor contact between the auxiliary cathode and the translucent cathode, which cannot be achieved. The desired effect.
  • the nano metal ink is printed into the groove where the cathode is located by nozzle printing, and the metal line is formed after high temperature curing, because the cathode of the OLED device is electrically connected to the printed metal line Connected together, the printed metal wire can be used as the auxiliary cathode of the OLED device, which can effectively reduce the resistance of the cathode and improve the phenomenon of uneven brightness of the display panel caused by the voltage drop caused by the high sheet resistance of the cathode.
  • OLED devices are extremely susceptible to damage from water or solvents, and the amount of solvent in the ink for printing metals will affect the performance and life of the OLED device.
  • OLED devices cannot withstand high temperature processes higher than 100°C. Therefore, the curing temperature of the printing metal ink is limited, and the resistance cannot be effectively reduced.
  • the present invention provides an auxiliary electrode transfer structure and a method for manufacturing a display panel.
  • the auxiliary electrode is transferred to the electrode in the display panel through the auxiliary electrode transfer structure, so as to improve the defects generated during the transfer of the existing auxiliary electrode. At the same time, it can improve the uneven brightness of the display panel caused by the voltage drop caused by the high sheet resistance of the cathode.
  • the present invention provides an auxiliary electrode transfer structure, including a transparent base layer; a light-to-heat conversion layer disposed above the transparent base layer; and an auxiliary electrode disposed above the light-to-heat conversion layer; laser
  • the mechanism is used to form a laser, which passes through the transparent base layer to the light-to-heat conversion layer.
  • the materials used in the light-to-heat conversion layer include thermosetting resins, thermoplastic resins, and laser-absorbing materials.
  • the weight percentage of the laser-absorbing materials is 20wt%-40wt%.
  • the auxiliary electrode transfer structure further includes a barrier layer disposed between the transparent base layer and the light-to-heat conversion layer; the barrier layer is made of silicon oxide, silicon nitride or At least one of silicon oxynitride.
  • the auxiliary electrode transfer structure further includes a graphene layer disposed between the auxiliary cathode and the light-to-heat conversion layer.
  • the number of graphene layers is less than or equal to ten.
  • the auxiliary electrode transfer structure further includes an intermediate layer, the material of which is photosensitive resin, which is arranged between the graphene layer and the auxiliary cathode, and the intermediate layer has a thickness of 1 um -5um.
  • the material of the auxiliary electrode is aluminum, and the thickness is 0.1um-1um.
  • the present invention also provides a method for manufacturing a display panel, which includes the following steps: providing the auxiliary electrode transfer structure; manufacturing an array substrate and forming an OLED device on the array substrate, the OLED device having an exposed array
  • the step of forming an OLED device includes forming a second electrode on the array substrate; forming a hole injection layer on the second electrode; forming a hole transport layer on the hole Forming a light-emitting layer on the hole transport layer; forming an electron transport layer on the light-emitting layer; forming an electron injection layer on the electron transport layer; forming the first electrode on the electron injection Layer up.
  • the second electrode is an anode, which is an opaque electrode;
  • the first electrode is a cathode, which is a fully transparent or semi-transparent electrode.
  • a positioning mark is provided on the first electrode of the display panel; in the step of aligning the position of the first electrode with the laser, the positioning mark is acquired by a CCD camera to align the laser The first electrode position.
  • the auxiliary electrode transfer structure and the manufacturing method of the display panel of the present invention can effectively transfer the auxiliary electrode to the cathode of the OLED device through the auxiliary electrode transfer structure; effectively improve the adverse effects of the existing auxiliary electrode transfer, and at the same time effectively
  • the phenomenon of uneven brightness of the display panel caused by the voltage drop caused by the high sheet resistance of the cathode is improved; in the manufacturing method of the display panel, the auxiliary electrode transfer method is relatively simple.
  • FIG. 1 is a schematic diagram of an auxiliary electrode transfer structure according to an embodiment of the present invention.
  • the downward arrow below the laser mechanism indicates the laser.
  • FIG. 2 is a diagram of the positional relationship between the auxiliary electrode transfer structure and the display panel when the auxiliary electrode is transferred according to the embodiment of the present invention.
  • FIG 3 is a diagram showing the positional relationship between the auxiliary electrode transfer structure and the display panel after the auxiliary electrode transfer according to the embodiment of the present invention.
  • an auxiliary electrode transfer structure 1 of the present invention includes a transparent base layer 11, a barrier layer 12, a light-to-heat conversion layer 13, a graphene layer 14, an intermediate layer 15, and an auxiliary electrode 16. And the laser mechanism 17.
  • the transparent base layer 11 can be selected from transparent glass or transparent plastic.
  • the barrier layer 12 is provided on the transparent base layer 11.
  • the material used for the barrier layer 12 is at least one of silicon oxide, silicon nitride, or silicon oxynitride, which can be deposited by plasma-enhanced chemical vapor deposition.
  • the barrier layer 12 can improve the adhesion between the subsequent film layer and the transparent substrate.
  • the thickness of the barrier layer 12 is less than or equal to 2um.
  • the light-to-heat conversion layer 13 is disposed on the blocking layer 12.
  • the materials used for the light-to-heat conversion layer 13 include thermosetting resins, thermoplastic resins, and laser-absorbing materials.
  • the weight percentage of the laser-absorbing materials is 20wt%-40wt%.
  • the weight content percentage of the laser absorbing material is set to 20 wt%-40 wt%, which can ensure a high light-to-heat conversion ratio while also taking into account light transmittance.
  • the material for absorbing laser light can be at least one of carbon black, dye, and pigment.
  • the photothermal conversion ratio is low
  • the weight percentage of the laser-absorbing material is greater than 40 wt%
  • the light transmittance is low. Both the low light-to-heat conversion ratio and low light transmittance affect the subsequent transfer of the auxiliary electrode 16.
  • the graphene layer 14 is disposed on the light-to-heat conversion layer 13 and can be deposited by plasma enhanced chemical vapor deposition.
  • the number of layers of the graphene layer 14 is less than or equal to ten to maintain the light transmittance of the entire auxiliary cathode conversion substrate and facilitate subsequent laser alignment, that is, the laser mechanism 17 can recognize the positioning marks on the display panel 2 .
  • the material of the intermediate layer 15 is photosensitive resin, which is arranged on the graphene layer 14, and the thickness of the intermediate layer 15 is 1 um-5 um.
  • the intermediate layer 15 can block the instantaneous transfer of excessive heat to the subsequent auxiliary cathode, causing the auxiliary cathode to splash.
  • the auxiliary electrode 16 is provided on the intermediate layer 15.
  • the material of the auxiliary electrode 16 is aluminum, and the thickness is 0.1um-1um.
  • the melting point of aluminum is relatively low, and the thickness cannot be too thick. If it is too thick, it will be difficult to melt under the action of the heat transferred from the light-to-heat conversion layer 13, and it must not be too thin. If it is too thin, it will be difficult to form effective new materials on subsequent electrodes.
  • the auxiliary electrode 16 cannot achieve the purpose of improving the sheet resistance of the cathode.
  • the laser mechanism 17 is used to form laser light, and the laser light passes through the transparent base layer 11 to the light-to-heat conversion layer 13.
  • at least one laser mechanism 17 is provided, and the laser mechanism 17 has a CCD camera 171 for positioning the laser position.
  • the improvement of this embodiment lies in the structure of each film layer in the auxiliary electrode transfer structure 1.
  • the laser mechanism 17 is not the focus of improvement in this case. Therefore, other parts of the laser mechanism 17, such as the laser generator 172, are not the same. A repeat.
  • the present invention also provides a manufacturing method of the display panel 2 including the following steps.
  • the first step is to provide the auxiliary electrode transfer structure 1 described above.
  • the second step is to fabricate an array substrate 21 and form an OLED device 22 on the array substrate 21.
  • the OLED device 22 has a first electrode 227 exposed on the surface of the array substrate 21; the step of forming the OLED device 22 includes forming A second electrode 221 is formed on the array substrate 21; a hole injection layer 222 is formed on the second electrode 221; a hole transport layer 223 is formed on the hole injection layer 222; formed on the hole transport An electron transport layer 225 is formed on the light-emitting layer 224; an electron injection layer 226 is formed on the electron transport layer 225; the first electrode 227 is formed on the electron injection layer 226.
  • the second electrode 221 is an anode, which is an opaque electrode;
  • the first electrode 227 is a cathode, which is a fully transparent or semi-transparent electrode.
  • the first electrode 227 of the display panel 2 is provided with positioning marks for laser positioning.
  • the auxiliary electrode transfer structure 1 is covered on the first electrode 227, wherein the auxiliary electrode 16 is attached to the first electrode 227.
  • Step 3 is to emit laser light through the laser mechanism 17, the laser light is aligned with the position of the first electrode 227 and passes through the transparent base layer 11 to the light-to-heat conversion layer 13.
  • the light-to-heat conversion layer 13 converts the light energy of the laser into thermal energy to heat the auxiliary electrode 16 at the position of the first electrode 227, and forms the auxiliary electrode 16 again after the surface of the first electrode 227 is cured.
  • the laser only irradiates the position of the corresponding cathode pattern.
  • the photothermal conversion material will convert the laser energy into heat.
  • the thermal energy of the light-to-heat conversion layer 13 Conduction to the auxiliary electrode 16 makes the auxiliary electrode 16 partly heat-melted, so that the auxiliary electrode 16 is transferred to the surface of the first electrode 227 and then forms an electrical connection with the first electrode 227.
  • the thermally fused auxiliary electrode 16 is cooled and solidified on the surface of the first electrode 227 to form a new auxiliary electrode 16, that is, the transfer of the auxiliary electrode 16 is completed.
  • a subsequent packaging process and an appropriate heat treatment process can be performed, so that the auxiliary electrode 16 and the cathode of the OLED device 22 can form a better ohmic contact.

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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
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  • Electroluminescent Light Sources (AREA)

Abstract

本发明公开了一种辅助电极转移结构及显示面板的制作方法，所述辅助电极转移结构包括透明基层；光热转换层，设于所述透明基层上方；以及辅助电极，设于所述光热转换层上方；激光机构，用以形成激光，所述激光穿过所述透明基层至所述光热转换层。

Description

辅助电极转移结构及显示面板的制作方法 技术领域
本发明涉及显示技术领域，具体为一种辅助电极转移结构及显示面板的制作方法。
 背景技术
AMOLED显示装置可分为底发光型(由阵列基板侧出光)以及顶发光型(由封装盖板玻璃侧出光)两种。在顶发光型AMOLED显示装置中，因为OLED的光源需穿透OLED阴极, 因此必须采用透明或是半透明的阴极材料, 现有技术中透明阴极材料多使用透明氧化物(TCO, 例如IZO), TCO的厚度范围100 nm 到500nm之间, 方块电阻在5~30Ω/□之间。半透阴极多使用薄金属(例如银, 银镁合金等), 为了使半透明阴极保持40%以上的光穿透率, 一般使用的厚度在10nm到200nm之间, 方块电阻在1至5Ω/□之间, 这样电阻值的阴极只适合应用在小尺寸显示装置中。若在大尺寸显示装置中应用，便会因阴极的高方块电阻产生电压降(IR drop),离阴极电压输入端越远的地方亮度越低，从而导致显示器光亮度不均匀现象。
为解决阴极的高方块电阻产生电压降的问题。现有技术中，在既有彩色滤光片盖板的黑色矩阵(Black Matrix ，BM) 上方制作支撑柱(Photo Spacer，PS) , 黑色矩阵与支撑柱呈现网状或是条状外观, 然后在支撑柱上方制作辅助阴极金属, 因为黑色矩阵与支撑柱所在位置不属于发光区域, 可以使用较厚的辅助阴极来降低阴极电阻, 当彩色滤光片的盖板玻璃与OLED背板玻璃组合时, 辅助阴极即可与OLED的半透明阴极接触达到降低整体阴极的阻值, 进而改善OLED显示面板的因电压降造成亮度不均的问题。但是当OLED显示面板的尺寸放大时, 黑色矩阵与支撑柱的厚度均匀性较难控制, 且OLED背板玻璃形变会较为严重, 导致辅助阴极与半透明阴极之间可能产生接触不良问题, 无法达到应有的效果。
现有技术中，还存在另一种技术来解决阴极的高方块电阻产生电压降的问题。即在OLED器件中的阴极形成后, 采用喷嘴打印的方式将奈米金属墨水打印到这些阴极所在的凹槽内, 经过高温固化后形成金属线, 因为OLED器件的阴极与打印的金属线电性连结在一起, 打印的金属线可以当做OLED器件的辅助阴极, 如此可以有效降低阴极的电阻, 改善因阴极的高方块电阻产生电压降导致显示面板亮度不均的现象。但是OLED器件极易受到水或是溶剂的损伤, 而打印金属的墨水中的溶剂多少会影响OLED器件的性能与寿命。并且OLED器件无法承受高于100℃的高温工艺. 因此打印金属墨水固化温度受限, 也无法有效降低阻值。
 技术问题
为解决上述技术问题：本发明提供一种辅助电极转移结构、显示面板的制作方法，通过辅助电极转移结构将辅助电极转移至显示面板中的电极上，以改善现有辅助电极转移时产生的不良影响，同时改善因阴极的高方块电阻产生电压降导致显示面板亮度不均的现象。
 技术解决方案
解决上述问题的技术方案是：本发明提供一种辅助电极转移结构，包括透明基层；光热转换层，设于所述透明基层上方；以及辅助电极，设于所述光热转换层上方；激光机构，用以形成激光，所述激光穿过所述透明基层至所述光热转换层。
在本发明一实施例中，所述光热转换层所用材料包括热固性树酯、热塑性树酯和吸收激光的材料,在所述光热转换层中，所述吸收激光的材料的重量含量百分数为20wt％-40wt％。
在本发明一实施例中，所述的辅助电极转移结构还包括阻挡层，设于所述透明基层与所述光热转换层之间；所述阻挡层所用材料为氧化硅、氮化硅或者氮氧化硅中的至少一种。
在本发明一实施例中，所述的辅助电极转移结构还包括石墨烯层，设于所述辅助阴极与所述光热转换层之间。
在本发明一实施例中，所述石墨烯层的层数小于等于十层。
在本发明一实施例中，所述的辅助电极转移结构还包括中间层，其所用材料为光敏树脂，设于所述石墨烯层与所述辅助阴极之间，所述中间层的厚度为1um-5um。
在本发明一实施例中，所述辅助电极的材料为铝，厚度为0.1um-1um。
本发明还提供了一种显示面板的制作方法，包括以下步骤：提供所述的辅助电极转移结构；制作一阵列基板并在所述阵列基板上形成OLED器件，所述OLED器件具有一裸露于阵列基板表面的第一电极；将所述辅助电极转移结构覆于所述第一电极上，其中所述辅助电极贴合于所述第一电极上；通过所述激光机构发出激光，所述激光对准所述第一电极位置，并穿过所述透明基层至所述光热转换层；所述光热转换层将激光的光能转换为热能使所述第一电极位置的所述辅助电极热熔，并在所述第一电极的表面固化后重新形成辅助电极。
在本发明一实施例中，在形成OLED器件步骤中，包括形成第二电极于所述阵列基板上；形成空穴注入层于所述第二电极上；形成空穴传输层于所述空穴注入层上；形成发光层于所述空穴传输层上；形成电子传输层于所述发光层上；形成电子注入层于所述电子传输层上；形成所述第一电极于所述电子注入层上。
在本发明一实施例中，所述第二电极为阳极，其为不透明的电极；所述第一电极为阴极，其为全透明或者半透明的电极。
在本发明一实施例中，所述显示面板的第一电极上具有定位标记；在所述激光对准所述第一电极位置步骤中，通过CCD相机获取该定位标记以使所述激光对准所述第一电极位置。
 有益效果
本发明的辅助电极转移结构、显示面板的制作方法，通过辅助电极转移结构能够有效的将辅助电极转移到OLED器件的阴极上；有效的改善了现有辅助电极转移时产生的不良影响，同时有效改善了因阴极的高方块电阻产生电压降导致显示面板亮度不均的现象；显示面板的制作方法中，辅助电极转移的方法较为简单。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
下面结合附图和实施例对本发明作进一步解释。
图1是本发明实施例的辅助电极转移结构示意图，图中激光机构下方的向下的箭头表示激光。
图2是本发明实施例的辅助电极转移结构在辅助电极转移时与显示面板的位置关系图。
图3是本发明实施例的辅助电极转移结构在辅助电极转移后与显示面板的位置关系图。
附图标记：
1辅助电极转移结构；        2显示面板；
11透明基层；               12阻挡层；
13光热转换层；             14石墨烯层；
15中间层；                 16辅助电极；
17激光机构；               21阵列基板；
22 OLED器件；              221第二电极；
222空穴注入层；            223空穴传输层；
224发光层；                225电子传输层；
226电子注入层；             227第一电极；
171 CCD相机；               172激光发生器。
 本发明的实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
如图1所示，在一实施例中，本发明的一种辅助电极转移结构1，包括透明基层11、阻挡层12、光热转换层13、石墨烯层14、中间层15、辅助电极16以及激光机构17。
所述透明基层11可以选择透明玻璃或者透明塑料。
所述阻挡层12设于所述透明基层11上。本实施例中，所述阻挡层12所用材料为氧化硅、氮化硅或者氮氧化硅中的至少一种，可以采用等离子体增强化学的气相沉积法沉积。本实施例中，所述阻挡层12其可以改善后续膜层与透明基板间的附著力。所述阻挡层12厚度小于或等于2um。
所述光热转换层13设于所述阻挡层12上。本实施例例中，所述光热转换层13所用材料包括热固性树酯、热塑性树酯和吸收激光的材料,在所述光热转换层13中，所述吸收激光的材料的重量含量百分数为20wt％-40wt％。所述吸收激光的材料的重量含量百分数设置为20wt％-40wt％，可以保证较高的光热转换比率的同时也能兼顾光的穿透率。本实施例了中，吸收激光的材料可以选择炭黑、染料、色素中的至少一种。当所述吸收激光的材料的重量含量百分数小于20wt％，则光热转换比率低，当所述吸收激光的材料的重量含量百分数大于40wt％，则光的穿透率低。光热转换比率低、光的穿透率低均影响后续辅助电极16的转移。
所述石墨烯层14设于所述光热转换层13上，可以采用等离子体增强化学的气相沉积法沉积。本实施例中，所述石墨烯层14的层数小于等于十层，以保持整个辅助阴极转换基板的透光性, 方便后续激光对位，即激光机构17能够识别显示面板2上的定位标记。
所述中间层15的所用材料为光敏树脂，设于所述石墨烯层14上，所述中间层15的厚度为1um-5um。所述中间层15能够阻挡过多的热量瞬间传递到后续的辅助阴极上，造成辅助阴极喷溅现象。
所述辅助电极16设于所述中间层15上。所述辅助电极16的材料为铝，厚度为0.1um-1um。铝的熔点相对较低，厚度不能过厚，过厚则难以在光热转换层13传递至的热量的作用下热熔，也不能过薄，过薄则难以在后续的电极上形成有效的新的辅助电极16，达不到改善因阴极的方块电阻较高的目的。
所述激光机构17用以形成激光，所述激光穿过所述透明基层11至所述光热转换层13。本实施例中，所述激光机构17设置至少一个，所述激光机构17具有CCD相机171，用以定位激光位置。本实施例的改进点在于辅助电极转移结构1中的各个膜层结构，所述激光机构17并非本案的改进重点，因此，对于激光机构17的其他部件，如激光发生器172等就不再一一赘述。
为了清楚的对本案的辅助电极转移结构1的功能进行说明， 本发明还提供了一种显示面板2的制作方法，包括以下步骤。
步骤一是提供所述的辅助电极转移结构1。
步骤二是制作一阵列基板21并在所述阵列基板21上形成OLED器件22，所述OLED器件22具有一裸露于阵列基板21表面的第一电极227；在形成OLED器件22步骤中，包括形成第二电极221于所述阵列基板21上；形成空穴注入层222于所述第二电极221上；形成空穴传输层223于所述空穴注入层222上；形成 于所述空穴传输层223上；形成电子传输层225于所述发光层224上；形成电子注入层226于所述电子传输层225上；形成所述第一电极227于所述电子注入层226上。本实施例中，所述第二电极221为阳极，其为不透明的电极；所述第一电极227为阴极，其为全透明或者半透明的电极。所述显示面板2的第一电极227上具有定位标记，用以激光定位。
如图2所示，将所述辅助电极转移结构1覆于所述第一电极227上，其中所述辅助电极16贴合于所述第一电极227上。
步骤三是通过所述激光机构17发出激光，所述激光对准所述第一电极227位置，并穿过所述透明基层11至所述光热转换层13。所述光热转换层13将激光的光能转换为热能使所述第一电极227位置的所述辅助电极16热熔，并在所述第一电极227的表面固化后重新形成辅助电极16。本实施例中，激光只照射相对应的阴极图案的位置, 当激光照射到光热转换层13时, 光热转换材料会将激光能量转换成热能, 光热转换材料受热气化后，使得光热转换层13体积膨胀, 因此激光照射区域产生局部的形变应力, 因为所述石墨烯层14之间只有较弱的凡得瓦尔引力, 当所述石墨烯层14受到形变产生应力, 所述石墨烯层14之间以及所述石墨烯层14与中间层15相互部分分离, 部分中间层15以及辅助电极16转移到第一电极227上,在此过程中，因为光热转换层13的热能部分传导到辅助电极16上,使得辅助电极16部分热熔，以使辅助电极16转移到第一电极227的表面后与所述第一电极227形成电性连结。
如图3所示，当撤走激光后，热熔后的辅助电极16冷却固化于所述第一电极227的表面重新形成新的辅助电极16，即完成辅助电极16的转移。
之后，可以进行后续的封装工艺, 并进行适当的热处理工艺，可以使辅助电极16与OLED器件22的阴极形成较佳的欧姆接触。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种辅助电极转移结构，其包括
    透明基层；
    光热转换层，设于所述透明基层上方；以及
    辅助电极，设于所述光热转换层上方；
    激光机构，用以形成激光，所述激光能够穿过所述透明基层至所述光热转换层。
  2. 根据权利要求1所述的辅助电极转移结构，其中：所述光热转换层所用材料包括热固性树酯、热塑性树酯和吸收激光的材料,在所述光热转换层中，所述吸收激光的材料的重量含量百分数为20wt％-40wt％。
  3. 根据权利要求1所述的辅助电极转移结构，其中：还包括阻挡层，设于所述透明基层与所述光热转换层之间；所述阻挡层所用材料为氧化硅、氮化硅或者氮氧化硅中的至少一种。
  4. 根据权利要求1所述的辅助电极转移结构，其中：还包括石墨烯层，设于所述辅助阴极与所述光热转换层之间；所述石墨烯层的层数小于等于十层。
  5. 根据权利要求4所述的辅助电极转移结构，其中：还包括中间层，其所用材料为光敏树脂，设于所述石墨烯层与所述辅助阴极之间，所述中间层的厚度为1um-5um。
  6. 根据权利要求1所述的辅助电极转移结构，其中：所述辅助电极的材料为铝，厚度为0.1um-1um。
  7. 一种显示面板的制作方法，其包括以下步骤：
    提供如权利要求1所述的辅助电极转移结构；
    制作一阵列基板并在所述阵列基板上形成OLED器件，所述OLED器件具有一裸露于阵列基板表面的第一电极；
    将所述辅助电极转移结构覆于所述第一电极上，其中所述辅助电极贴合于所述第一电极上；
    通过所述激光机构发出激光，所述激光对准所述第一电极位置，并穿过所述透明基层至所述光热转换层；所述光热转换层将激光的光能转换为热能使所述第一电极位置的所述辅助电极热熔，并在所述第一电极的表面固化后重新形成辅助电极。
  8. 根据权利要求7所述的显示面板的制作方法，其中，在形成OLED器件步骤中，包括
    形成第二电极于所述阵列基板上；
    形成空穴注入层于所述第二电极上；
    形成空穴传输层于所述空穴注入层上；
    形成发光层于所述空穴传输层上；
    形成电子传输层于所述发光层上；
    形成电子注入层于所述电子传输层上；
    形成所述第一电极于所述电子注入层上。
  9. 根据权利要求8所述的显示面板的制作方法，其中，所述第二电极为阳极，其为不透明的电极；所述第一电极为阴极，其为全透明或者半透明的电极。
  10. 根据权利要求7所述的显示面板的制作方法，其中，所述激光机构包括CCD相机；通过所述CCD相机能够使所述激光对准所述第一电极位置。
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