WO2020218109A1 - 蛍光体粉末および発光装置 - Google Patents
蛍光体粉末および発光装置 Download PDFInfo
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- WO2020218109A1 WO2020218109A1 PCT/JP2020/016538 JP2020016538W WO2020218109A1 WO 2020218109 A1 WO2020218109 A1 WO 2020218109A1 JP 2020016538 W JP2020016538 W JP 2020016538W WO 2020218109 A1 WO2020218109 A1 WO 2020218109A1
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- powder
- phosphor
- phosphor powder
- ultrasonic homogenizer
- measured
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- 239000000843 powder Substances 0.000 title claims abstract description 131
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000002245 particle Substances 0.000 claims abstract description 43
- 239000006185 dispersion Substances 0.000 claims abstract description 17
- 238000009826 distribution Methods 0.000 claims abstract description 16
- 238000005259 measurement Methods 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 10
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims abstract description 7
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims abstract description 7
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims abstract description 7
- 239000007864 aqueous solution Substances 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 229910003564 SiAlON Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 31
- 238000010304 firing Methods 0.000 description 23
- 238000000137 annealing Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 17
- 238000002156 mixing Methods 0.000 description 17
- 239000002994 raw material Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 239000002253 acid Substances 0.000 description 10
- 238000010306 acid treatment Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 230000002776 aggregation Effects 0.000 description 8
- 239000011812 mixed powder Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000004220 aggregation Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 238000013329 compounding Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 238000001354 calcination Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- -1 silicon nitride Chemical class 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XPIIDKFHGDPTIY-UHFFFAOYSA-N F.F.F.P Chemical compound F.F.F.P XPIIDKFHGDPTIY-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910001940 europium oxide Inorganic materials 0.000 description 3
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000010079 rubber tapping Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000004520 agglutination Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- PSBUJOCDKOWAGJ-UHFFFAOYSA-N azanylidyneeuropium Chemical compound [Eu]#N PSBUJOCDKOWAGJ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920005548 perfluoropolymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940043267 rhodamine b Drugs 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/30—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/615—Halogenides
- C09K11/616—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Definitions
- the present invention relates to a phosphor powder and a light emitting device.
- a light emitting device combining a semiconductor light emitting element such as an LED and a phosphor that absorbs a part of the light from the semiconductor light emitting element and converts the absorbed light into long wavelength wavelength conversion light to emit light.
- a semiconductor light emitting element such as an LED
- a phosphor that absorbs a part of the light from the semiconductor light emitting element and converts the absorbed light into long wavelength wavelength conversion light to emit light.
- the phosphor a nitride phosphor and an oxynitride phosphor having a relatively stable crystal structure are attracting attention.
- Eu-activated ⁇ -type sialon phosphors have excellent heat resistance and durability, and in addition to having a small change in brightness with increasing temperature, they are excited by light of a wide range of wavelengths from ultraviolet to blue light and have a range of 520 to 550 nm.
- the average particle size (d1) air permeation method
- the median diameter (50% D) in the particle size distribution is 12.5 to 35 ⁇ m
- the present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a technique relating to a ⁇ -type sialon phosphor capable of improving the brightness of a white LED.
- the present invention is a phosphor powder containing ⁇ -type sialone phosphor particles in which Eu is activated as a main component.
- the median diameter (D 50 ) measured by wet measurement using a laser diffraction type particle size distribution measuring device is defined as D1.
- D2 the median diameter (D 50 ) measured by wet measurement using a laser diffraction type particle size distribution measuring device is D2 in the phosphor powder subjected to the ultrasonic homogenizer treatment carried out under the following conditions.
- a fluorescent powder having a D1 / D2 of 1.05 or more and 1.70 or less is provided.
- a light emitting device including a light emitting element and the above-mentioned phosphor powder is provided.
- the brightness of the white LED can be improved.
- the present inventors investigated the relationship between the aggregated state of Eu-activated ⁇ -type sialon phosphor particles and the brightness of a white LED using the phosphor particles, and found that the median before and after the ultrasonic homogenizer of the phosphor particles. It has been found that there is a close relationship between the diameter ratio and the brightness of the white LED using the phosphor.
- adjusting the median diameter ratio before and after the ultrasonic homogenizer treatment has not been studied at all, and by controlling the degree of aggregation of the phosphor particles, Considering that there is room for improving the brightness of the white LED, the present invention has been completed.
- the fluorescent powder according to the embodiment contains Eu-activated ⁇ -type sialone fluorescent particles (hereinafter, may be simply referred to as “fluorescent particles”) as a main component.
- the main component refers to a case where 90% by mass or more of ⁇ -type sialon phosphor particles in which Eu is activated is contained in the entire phosphor powder.
- the phosphor powder may contain phosphor particles other than the ⁇ -type sialone phosphor particles in which Eu is activated.
- the fluorophore powder of the present embodiment is preferably composed of EU-activated ⁇ -type sialone phosphor particles, in other words, the content of Eu-activated ⁇ -type sialon phosphor particles is preferably 100% by mass. ..
- the phosphor powder according to the embodiment is a phosphor powder containing Eu-activated ⁇ -type sialon phosphor particles as a main component, and is the phosphor powder not subjected to the ultrasonic homogenizer treatment, and has a laser diffraction type particle size.
- a laser diffraction type particle size distribution measuring device in the phosphor powder subjected to the ultrasonic homogenizer treatment carried out under the following conditions, where the median diameter (D 50 ) measured by wet measurement using a distribution measuring device is D1.
- D1 / D2 is 1.05 or more and 1.70 or less.
- the fluorophore powder of the present embodiment is monodispersed by loosening the agglutination of the fluorophore particles by performing the ultrasonic homogenizer treatment under the above specific conditions.
- the fluorescent powder of the present embodiment is an appropriately aggregated fluorescent particle. When it is hardly agglomerated, it is close to a monodisperse state, so even if it is dispersed by the ultrasonic homogenizer treatment under the above specific conditions, D1 and D2 are almost the same, and D1 / D2 becomes 1. Get closer.
- D1 / D2 becomes large because the aggregation is loosened and monodispersed by the ultrasonic homogenizer treatment under the above specific conditions.
- D1 / D2 it is possible to improve the brightness of the white LED using the phosphor powder.
- D1 / D2 it is possible to suppress the aggregation of particles, thereby improving the dispersibility of the white LED described later in the encapsulant and suppressing the decrease in brightness. ..
- the fluorescent substance powder composed of ⁇ -type sialon phosphor particles at a normal technical level does not substantially change the aggregated state of the fluorescent substance powder even when subjected to ultrasonic homogenizer treatment. .. That is, it can be said that there is almost no aggregation.
- the fluorescent powder of the present embodiment is used for the white LED by appropriately aggregating the fluorescent powder by specifying D1 / D2 in a predetermined range. It is possible to improve the total luminous flux when it is present.
- the dispersion under the above conditions was prepared by collecting 30 mg of fluorescent powder and 100 ml of an aqueous sodium hexametaphosphate solution adjusted to 0.2% in a 200 ml beaker, and then precipitating using a spatula at room temperature (25 ° C.). It is obtained by stirring uniformly to the extent that it does not occur.
- the median diameter (D 50 ) of the phosphor powder is specifically calculated by a wet measurement using a laser diffraction type particle size distribution measuring device or a flow cell method. At this time, when the powder is supplied to the measuring device, ultrasonic waves are not applied, and a sample is supplied and measured at a pump flow rate of 75% using an attached SDC (Sample Delivery Controller) as a sample feeder. As the dispersion medium, an aqueous sodium hexametaphosphate solution adjusted to 0.2% is used.
- the lower limit of D1 / D2 is preferably 1.10 or more, more preferably 1.15 or more, and even more preferably 1.20 or more.
- D1 / D2 is preferably 1.65 or less, more preferably 1.55 or less.
- the lower limit of D1 is preferably 10 ⁇ m or more, more preferably 13 ⁇ m or more, and even more preferably 16 ⁇ m or more.
- the upper limit of D1 is preferably 35 ⁇ m or less, more preferably 32 ⁇ m or less, and even more preferably 29 ⁇ m or less.
- the lower limit of D2 is preferably 8 ⁇ m or more, more preferably 11 ⁇ m or more, and even more preferably 14 ⁇ m or more.
- the upper limit of D2 is preferably 25 ⁇ m or less, more preferably 22 ⁇ m or less, and even more preferably 19 ⁇ m or less.
- the median diameter (D 10 ) measured by wet measurement using the laser diffraction type particle size distribution measuring device of the phosphor powder according to the embodiment is preferably 7.0 to 25 ⁇ m, more preferably 9.5 to 20 ⁇ m. ..
- the median diameter (D 90 ) measured by wet measurement using the laser diffraction type particle size distribution measuring device of the phosphor powder according to the embodiment is preferably 20 to 60 ⁇ m, more preferably 25 to 55 ⁇ m.
- the method for producing the phosphor powder of the present embodiment includes, for example, a mixing step, a first firing step, a second firing step, a crushing / crushing step, an annealing treatment step, an acid treatment step, and cleaning / filtering. It consists of processes.
- the above-mentioned D1 / D2 is realized by comprehensively and appropriately combining the above-mentioned steps and adjusting the filling method (filling density), the temperature lowering rate, and the like in the annealing treatment step.
- a silicon compound such as silicon nitride, an aluminum compound such as aluminum nitride or aluminum oxide, an Eu compound selected from Eu metals, oxides, carbonates, halides, nitrides or oxynitrides (collectively).
- the raw material compounds) are weighed and mixed so as to constitute the phosphor powder of the present embodiment, respectively, to prepare a raw material mixture.
- the method of mixing the raw material compounds is not particularly limited, and examples thereof include a method of mixing using a known mixing device such as a V-type mixer, and further mixing sufficiently using a mortar, a ball mill, a planetary mill, a jet mill, or the like. Be done.
- a known mixing device such as a V-type mixer
- Examples of the aluminum compound include one or more aluminum compounds selected from aluminum-containing compounds that decompose by heating to produce aluminum oxide.
- the reaction in the raw material powder proceeds by filling the above-mentioned raw material mixed powder into a container such as a crucible whose surface in contact with the raw material is made of boron nitride and heating at a temperature of 1550 ° C. or higher and 2100 ° C. or lower in a nitrogen atmosphere.
- the purpose of the first firing step is to make Eu highly dispersed in the mixed powder by utilizing the reaction, and if ⁇ -type sialon is partially produced at this stage, the production rate thereof. It doesn't matter how big or small it is.
- Eu is highly dispersed by diffusing the oxide contained in the raw material in the liquid phase generated at a high temperature. By setting the firing temperature to 1550 ° C.
- the abundance of this liquid phase can be made sufficient, and the diffusion of Eu can be made sufficient.
- the firing time in the first firing step depends on the firing temperature, but is preferably adjusted in the range of 2 hours or more and 18 hours or less.
- the sample (first calcined powder) obtained in the first calcining step may be powdery or lumpy depending on the raw material compounding composition and the calcining temperature. Therefore, it is crushed and crushed as necessary to make it into a powder, for example, through a sieve having a mesh size of 45 ⁇ m.
- ⁇ Second firing process> one or more selected from silicon nitride, silicon oxide, aluminum nitride, aluminum oxide, and europium oxide are added to the first calcined powder, mixed by the same method as in the mixing step, and filled in a container.
- the second firing step is carried out at a temperature of 1900 ° C. or higher and 2100 ° C. or lower in a nitrogen atmosphere to obtain ⁇ -type sialone in which Eu is solid-dissolved.
- a firing temperature of 1900 ° C. or higher is preferable in order to increase the production rate of ⁇ -type sialon.
- the firing time in the second firing step depends on the firing temperature, but is preferably adjusted in the range of 6 hours or more and 18 hours or less.
- the sample (second calcined powder) after the second calcining step is in the form of a lump, it is made into a powder of a predetermined size by combining classification operations as necessary for crushing and crushing.
- a method of crushing and crushing the second calcined powder and sieving the powder in a range of 20 ⁇ m or more and 45 ⁇ m or less to obtain a powder that has passed through the sieve, or the second calcining examples thereof include a method of crushing powder to a predetermined particle size using a general crusher such as a ball mill, a vibration mill, or a jet mill.
- a crusher it is preferable to adopt a crushing device and crushing conditions that are as mild as possible so as not to cause mechanical damage to the second calcined powder.
- the parts of the crushing device that come into contact with the second fired powder shall be made of high toughness ceramics such as silicon nitride, alumina, and sialon. Is preferable.
- the second calcined powder after the crushing / crushing process has an average grain size from the viewpoint of finally obtaining an oxynitride phosphor for LED, which has high absorption efficiency of excitation light and exhibits sufficient luminous efficiency. It is preferable to adjust the powder so that the diameter is 50 ⁇ m or less.
- the EU-activated ⁇ -type sialon powder synthesized by the above method is annealed in a non-oxidizing atmosphere other than pure nitrogen at a temperature lower than that in the second firing step to increase the proportion of Eu 2+ in Eu and fluorescence.
- the state is changed so that Eu, which inhibits luminescence, can be dissolved and removed by acid treatment in the next step.
- a rare gas or a reducing gas is preferable as the atmosphere for performing the annealing treatment.
- the noble gas is, for example, a gas of a Group 18 element such as argon or helium.
- the reducing gas is a gas having a reducing power such as ammonia, carbon dioxide, carbon monoxide, and hydrogen.
- the reducing gas may be used alone or as a mixed gas with a neutral gas such as nitrogen or a rare gas.
- the appropriate range of the annealing temperature varies depending on the atmosphere in which it is used. If the temperature is too low, the state of Eu does not change and the characteristics do not improve, and if the temperature is too high, ⁇ -type sialon is decomposed, which is not preferable.
- the appropriate temperature range for annealing in a rare gas atmosphere such as argon or helium is 1350 ° C. or higher and 1600 ° C. or lower.
- the annealing time in the annealing treatment step depends on the annealing temperature, but is preferably adjusted in the range of 4 hours or more and 12 hours or less.
- a ⁇ -type sialone in which Eu is activated in a container with a lid (such as a crucible whose surface in contact with the raw material is made of boron nitride) is activated. It is preferable to fill the powder while tapping it to appropriately increase the degree of filling.
- the degree of filling for example, the ⁇ -type sialon powder in which Eu is activated is in a dense state so as to come into contact with the lid.
- the EU-activated ⁇ -type sialon powder after the annealing treatment at a temperature lowering rate faster than the conventional level.
- the temperature range of 1000 ° C. to 1500 ° C. is lowered at 3 to 10 ° C./min, and more preferably, the temperature of the above temperature range is lowered at 4 to 6 ° C./min.
- the ⁇ -type sialon powder that has been annealed is subjected to acid treatment.
- the acid used for the acid treatment one or more acids selected from hydrofluoric acid, sulfuric acid, phosphoric acid, hydrochloric acid, and nitric acid are used, and they are used in the form of an aqueous solution containing these acids.
- the main purpose of this acid treatment is to remove compounds that inhibit fluorescence and light emission that occur during the annealing treatment, and it is preferable to use a mixed acid of hydrofluoric acid and nitric acid.
- the annealed ⁇ -type sialon powder is dispersed in an aqueous solution containing the above acid and stirred for several minutes to several hours (eg, 10 minutes or more and 3 hours or less) to obtain the above acid. It is performed by reacting with.
- the temperature of the acid may be room temperature, but the higher the temperature, the easier the reaction proceeds, so 50 ° C. or higher and 80 ° C. or lower is preferable.
- the ⁇ -type sialon powder is separated from the acid with a filter or the like, and the separated ⁇ -type sialon powder is washed with water.
- the ⁇ -type sialone powder after washing with water is filtered using a filter to obtain a phosphor powder containing Eu-activated ⁇ -type sialon phosphor particles as a main component.
- the fluorescent powder of the present embodiment may be enclosed in a package made of an aluminum laminated film. That is, the package contains the fluorescent powder of the present embodiment in a dry state inside the package.
- the light emitting device includes a light emitting element and a wavelength conversion unit using the phosphor powder of the above-described embodiment. More specifically, the light emitting device is a white light emitting diode (LED) including the phosphor powder of the present embodiment. In such an LED, it is preferable to use the phosphor powder sealed in a sealing material.
- a sealing material is not particularly limited, and examples thereof include silicone resin, epoxy resin, perfluoropolymer resin, and glass.
- a sealing material that is durable even when exposed to high temperatures and strong light is preferable, and from this viewpoint, a silicone resin is particularly preferable.
- the light emitting light source it is preferable to emit light having a wavelength of a color that complements the green emission of the ⁇ -type sialone phosphor or light having a wavelength that can efficiently excite the ⁇ -type sialon phosphor, for example, a blue light source (blue LED or the like).
- a blue light source blue LED or the like
- the peak wavelength of the light from the light emitting light source can be a wavelength in a range including blue (for example, a range of 420 nm or more and 560 nm or less), and more preferably a range of 420 nm or more and 480 nm or less.
- the light emitting device can further include a phosphor (hereinafter, referred to as “red phosphor”) that emits red light having a peak wavelength of 610 nm or more and 670 nm or less when receiving excitation light having a wavelength of 455 nm. ..
- the red phosphor may be of a single species, but may be of two or more.
- the light emitting device of the present invention having such a configuration can obtain white light by a combination of a ⁇ -type sialon phosphor that emits green light, a light emitting light source that produces blue light, and a red phosphor that emits red light.
- the use of Mn-activated K 2 SiF 6 phosphor having a narrow emission spectrum half width is preferable because the light emitting device with high color gamut is obtained.
- the brightness can be improved by using the above-mentioned phosphor powder as a wavelength conversion member.
- Example 1 The method for producing the fluorescent powder of Example 1 will be described.
- ⁇ Mixing process> ⁇ -type silicon nitride powder (manufactured by Ube Kosan Co., Ltd., SN-E10 grade, oxygen content 1.0% by mass) 95.90% by mass, aluminum nitride powder (manufactured by Tokuyama Co., Ltd., F grade, oxygen content 0.8%) Mass%) 2.75% by mass, aluminum oxide powder (manufactured by Taimei Chemicals Co., Ltd., TM-DAR grade) 0.56% by mass, europium oxide powder (manufactured by Shinetsu Chemicals Co., Ltd., RU grade) 0.80% by mass Was mixed using a V-type mixer (S-3, manufactured by Tsutsui Rikagaku Kikai Co., Ltd.), and further passed through a sieve having a mesh size of 250 ⁇ m to remove agglomerates to obtain a raw material mixed powder.
- V-type mixer S-3, manufactured by Tsutsui Rikagaku K
- a heat treatment (first firing step) was performed at 1850 ° C. for 4 hours in a pressurized nitrogen atmosphere of 0.8 MPa in a furnace.
- the heat-treated powder was passed through a sieve having an opening of 45 ⁇ m. All the powder passed through the sieve.
- This first firing step is carried out, and the powder (referred to as the first fired powder) that has passed through the sieve and the raw material mixed powder having the first blending composition are blended in a mass ratio of 70:30 (second blending). Composition (% by mass)), and the mixture was mixed by the same method as described above.
- the pulverized powder was passed through a sieve having an opening of 45 ⁇ m. The passing rate of the sieve was 96%.
- the second firing step was carried out, and 600 g of pulverized powder passed through a sieve having an opening of 45 ⁇ m was filled in a cylindrical boron nitride container with a lid having an inner diameter of 10 cm and a height of 10 cm while tapping. At this time, the powder was so densely packed that it came into contact with the lid.
- the filled container was annealed at 1500 ° C. for 8 hours in an electric furnace with a carbon heater in an atmosphere of atmospheric pressure argon. When the temperature of the annealing was lowered, the temperature in the temperature range of 1000 ° C. to 1500 ° C. was lowered at 5 ° C./min. The annealed powder was passed through a sieve having an opening of 45 ⁇ m. The passing rate of the sieve was 95%.
- ⁇ Acid treatment process> The annealed powder was subjected to acid treatment by immersing it in a 1: 1 mixed acid of 50% hydrofluoric acid and 70% nitric acid at 75 ° C. for 30 minutes.
- ⁇ Washing / filtration process The acid-treated powder is precipitated, and decantation for removing the supernatant and fine powder is repeated until the pH of the solution is 5 or higher and the supernatant becomes transparent, and the final obtained precipitate is filtered, dried, and carried out.
- the phosphor powder of Example 1 was obtained.
- the existing crystal phase was a ⁇ -type sialone single phase and the ⁇ -type sialon phosphor was obtained as a single phase.
- Example 2 Except for the fact that the second compounding composition (mass%) of Example 1 was compounded with the first calcined powder and the raw material mixed powder having the first compounding composition in a mass ratio of 50:50.
- the phosphor powder of Example 2 was prepared by the same method as in Example 1. When the annealed powder was passed through a sieve having a mesh size of 45 ⁇ m, the passing rate of the sieve was 95%.
- Example 3 The second blending composition (mass%) of Example 1 was blended with the first calcined powder and the raw material mixed powder having the first blending composition at a blending ratio of 30:70 in mass ratio, and Example 1 The second firing was performed under the same conditions as above.
- the pulverization conditions after the heat treatment were a sample supply rate of 50 g / min and a pulverization air pressure of 0.5 MPa.
- the fluorescent powder of Example 3 was prepared by the same method as in Example 1. When the annealed powder was passed through a sieve having a mesh size of 45 ⁇ m, the passing rate of the sieve was 96%.
- Comparative Example 1 In the annealing treatment step, the phosphor powder of Comparative Example 1 was prepared by the same method as in Example 1 except that the filling amount was 100 g and the ⁇ -type sialon phosphor was filled without tapping according to the usual production method. When the annealed powder was passed through a sieve having a mesh size of 45 ⁇ m, all the powder passed through the sieve.
- Comparative Example 2 In the annealing treatment step, the phosphor powder of Comparative Example 2 was prepared by the same method as in Example 1 except that the temperature range of 1000 ° C. to 1500 ° C. was lowered at 0.5 ° C./min when the temperature of the annealing was lowered. did. When the annealed powder was passed through a sieve having a mesh size of 45 ⁇ m, the passing rate of the sieve was 84%.
- the following emission characteristics were evaluated for the obtained fluorescent powders of Examples 1 to 3 and Comparative Examples 1 and 2. The results are shown in Table 1.
- the fluorescence characteristics of the phosphor powder are determined by filling a dedicated solid sample holder with the phosphor powder using a spectrofluorimeter (F-7000, manufactured by Hitachi High-Technologies) calibrated by the Rhodamine B method and a standard light source. The fluorescence spectrum when irradiated with excitation light dispersed at 455 nm was measured, and the peak intensity and peak wavelength were determined.
- the unit is an arbitrary unit, and the measurement was performed under the same conditions, and the fluorescent powders of Examples 1 to 3 and Comparative Examples 1 and 2 were continuously measured.
- the peak intensity of the fluorescent powder of Comparative Example 1 was set to 100% for comparison.
- the obtained dispersion is placed in a columnar container (inner diameter 5.5 cm) with a bottom surface of 2.75 cm, and an ultrasonic homogenizer (US-150E, manufactured by Nissei Tokyo Office) with a radius of 10 mm (outer diameter 20 mm). ) was immersed in a dispersion liquid of 1.0 cm or more and irradiated with ultrasonic waves at a frequency of 19.5 kHz and an output of 150 W for 3 minutes to obtain a solution to be measured.
- an ultrasonic homogenizer US-150E, manufactured by Nissei Tokyo Office
- a flow cell type laser diffraction / scattering type particle size distribution measuring device (MT3300EXII manufactured by Microtrac Bell)
- the above solution to be measured is poured into a dispersion medium filled in a circulation system to generate a sample to be measured, and then the sample to be measured is generated.
- the particle size of the phosphor powder was measured while circulating the sample to be measured, and the media diameters D 10 , D 50 , and D 90 were determined.
- ⁇ Condition 2 Median diameter without ultrasonic homogenizer pretreatment> A dispersion was prepared in the same manner as in Condition 1 above, and a solution to be measured was obtained without performing the above-mentioned ultrasonic homogenizer treatment. With respect to the obtained solution to be measured, the particle size of the phosphor powder was measured using a flow cell type laser diffraction / scattering type particle size distribution measuring device in the same manner as in the above condition 1, and the respective median diameters D 10 and D 50 were measured. , D 90 was calculated.
- the evaluation results of the phosphor powders of Examples 1 to 3 and Comparative Examples 1 and 2 are summarized in Table 1 below.
- the median diameter (D 50 ) with pretreatment using an ultrasonic homogenizer is set to D2
- the median diameter (D 50 ) without ultrasonic homogenizer pretreatment in other words, the measurement without ultrasonic homogenizer treatment.
- the median diameter was set to D1
- Comparative Example 2 since the agglomeration was disintegrated by the ultrasonic homogenizer treatment and most of them were monodispersed, it was found that more phosphor powders were agglomerated than in Examples 1 to 3.
- the fluorophore powder of Example 1 was added to a silicone resin (JCR6175, manufactured by Toray Dow Corning) together with a fluoride phosphor K 2 SiF 6 phosphor (manufactured by Denka, KR-3K01) as a red phosphor. Then, the mixture was mixed with a self-rotating and revolving mixer (Awatori Rentaro manufactured by Shinky Co., Ltd .: ARV-310) to obtain a slurry.
- a silicone resin JCR6175, manufactured by Toray Dow Corning
- a fluoride phosphor K 2 SiF 6 phosphor manufactured by Denka, KR-3K01
- the white LED of Example 4 was produced by potting the slurry in a surface mount type package to which a blue LED element having a peak wavelength of 450 nm was bonded and then thermosetting the slurry.
- the addition amount ratio of the ⁇ -type sialone phosphor and the fluoride phosphor was adjusted so that the chromaticity coordinates (x, y) of the white LED became (0.28, 0.27) when the white LED emitted light.
- the white LED of Example 5 was produced by the same method as in Example 4 except that the fluorescent powder of Example 2 was used instead of the fluorescent powder of Example 1. Further, white LEDs of Examples 6 and Comparative Examples 3 and 4 were also produced in the same manner as in Example 4 except that the fluorescent powders of Examples 3 and Comparative Examples 1 and 2 were used, respectively. The addition amount ratios of the ⁇ -type sialon phosphor and the fluoride phosphor were adjusted so that the chromaticity coordinates (x, y) of the white LED would be (0.28, 0.27) at the time of energized light emission.
- the phosphor powder of the present embodiment has a white LED because the values of D1 / D2 are in a specific range, that is, they are in an appropriate aggregation state. It was confirmed that the brightness was high when used as.
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Abstract
Description
たとえば、特許文献2には、平均粒度(d1)(空気透過法)が9~16μmであり、粒度分布でのメディアン径(50%D)が12.5~35μmであり、50%D/d1=1.4~2.2なる条件を満たすβ型サイアロン蛍光体が開示されている。
超音波ホモジナイザ処理が施されていない前記蛍光体粉末において、レーザー回折式粒度分布測定装置を用いた湿式測定により測定されるメジアン径(D50)をD1とし、
以下の条件で実施される超音波ホモジナイザ処理が施された前記蛍光体粉末において、レーザー回折式粒度分布測定装置を用いた湿式測定により測定されるメジアン径(D50)をD2としたとき、
D1/D2が1.05以上1.70以下である蛍光体粉末が提供される。
(条件)
前記蛍光体粉末30mgを、濃度0.2%ヘキサメタリン酸ナトリウム水溶液100ml中に均一に分散させた分散液を、底面が内径5.5cmの円柱状容器に入れる。次に当該分散液中に、超音波ホモジナイザの外径20mmの円柱状チップを1.0cm以上浸した状態で、周波数19.5kHz、出力150Wで3分間、当該分散液に超音波を照射する。
なお、本実施形態の蛍光体粉末は、Euを賦活したβ型サイアロン蛍光体粒子からなること、言い換えると、Euを賦活したβ型サイアロン蛍光体粒子の含有率が100質量%であることが好ましい。
本実施形態のEuを賦活したβ型サイアロン蛍光体粒子の成分は、一般式:Si6-zAlzOzN8-z(z=0.005~1)で表されるβ型サイアロンに発光中心として二価のユーロピウム(Eu2+)を固溶した蛍光体である。
D1/D2が1.05以上1.70以下である。
(条件)
前記蛍光体粉末30mgを、濃度0.2%ヘキサメタリン酸ナトリウム水溶液100ml中に均一に分散させた分散液を、底面が内径5.5cmの円柱状容器に入れる。次に当該分散液中に、超音波ホモジナイザの外径20mmの円柱状チップを1.0cm以上浸した状態で、周波数19.5kHz、出力150Wで3分間、当該分散液に超音波を照射する。
本実施形態の蛍光体粉末は、D1/D2を1.05以上とすることにより、当該蛍光体粉末を用いた白色LEDの輝度の向上を図ることができる。一方、D1/D2を1.70以下とすることにより、粒子の凝集を抑制することで、後述する白色LEDの封止材中での分散性を良好にし、輝度の低下を抑制することができる。
特許文献1、2に記載されたような、通常の技術水準でのβ型サイアロン蛍光体粒子からなる蛍光体粉末は、超音波ホモジナイザ処理をしても、蛍光体粉末の凝集状態はほぼ変動しない。すなわち、ほとんど凝集していないといえる。これに対して、本実施形態の蛍光体粉末では、D1/D2を所定の範囲に特定することによって、蛍光体粉末を適度に凝集させることによって、本実施形態の蛍光体粉末を白色LEDに用いたときの全光束を向上することができるものである。
また、実施形態に係る蛍光体粉末のレーザー回折式粒度分布測定装置を用いた湿式測定により測定されるメジアン径(D90)は、20~60μmが好ましく、25~55μmがより好ましい。
実施形態に係る蛍光体粉末のメジアン径(D10)、メジアン径(D90)を上記の数値範囲とすることにより、蛍光体粉末のばらつきを抑制し、当該蛍光体粉末を用いた白色LEDの輝度をより一層向上させることができる。
本実施形態の蛍光体粉末の製造方法は、下記に述べるように、たとえば、混合工程、第1焼成工程、第2焼成工程、解砕・粉砕工程、アニール処理工程、酸処理工程および洗浄・濾過工程で構成される。上述したD1/D2は、上記各工程を総合的に適切に組み合わせるとともに、アニール処理工程における充填方法(充填密度)や降温速度などを調節することにより実現される。
混合工程では、例えば窒化ケイ素などのケイ素化合物、例えば窒化アルミニウム、酸化アルミニウムなどのアルミニウム化合物、Euの金属、酸化物、炭酸塩、ハロゲン化物、窒化物または酸窒化物から選ばれるEu化合物(まとめて原料化合物という)を、それぞれ本実施形態の蛍光体粉末を構成するように秤量して混合し、原料混合物を調製する。原料化合物を混合する方法は特に限定されないが、例えばV型混合機等の公知の混合装置を用いて混合し、さらに乳鉢、ボールミル、遊星ミル、ジェットミルなどを用いて十分に混合する方法が挙げられる。なお、空気中の水分及び酸素と激しく反応する窒化ユーロピウム等を混合する場合は、不活性雰囲気で置換されたグローブボックス内で取り扱うことが適切である。
上記の原料混合粉末を少なくとも当該原料が接する面が窒化ホウ素からなる坩堝等の容器に充填し、窒素雰囲気中で1550℃以上2100℃以下の温度で加熱することにより、原料粉末内の反応を進行させる。第1焼成工程での目的は、反応を利用してEuを混合粉末中に高分散化させることが目的であり、この段階で部分的にでもβ型サイアロンが生成していれば、その生成率の大小は問わない。Euは、原料中に含まれる酸化物が高温になって生成する液相中を拡散することにより、高分散化する。焼成の温度を1550℃以上とすることにより、この液相の存在量を十分なものとし、Euの拡散を十分なものとすることができる。焼成温度を2100℃以下とすることにより、β型サイアロンの分解を抑制するための、非常に高い窒素圧力を必要とせずに済むため、工業的に好ましい。第1焼成工程における焼成時間は、焼成温度にもよるが、2時間以上18時間以下の範囲で調整することが好ましい。
次に、この第1焼成粉に対して、窒化ケイ素、酸化ケイ素、窒化アルミニウム、酸化アルミニウム、酸化ユーロピウムから選ばれる一種以上を添加し、混合工程と同様の方法により、混合し、容器に充填し、窒素雰囲気中、1900℃以上2100℃以下の温度で第2焼成工程を実施し、Euが固溶したβ型サイアロンを得る。第2焼成工程では、β型サイアロンの生成率を高めるために、1900℃以上の焼成温度が好ましい。第2焼成工程における焼成時間は、焼成温度にもよるが、6時間以上18時間以下の範囲で調整することが好ましい。
第2焼成工程後の試料(第2焼成粉)は塊状となっているため、粉砕、解砕に必要に応じて分級操作を組み合わせて所定サイズの粉末状とする。具体的な処理操作の例としては、第2焼成粉を解砕して粉砕し、目開き20μm以上45μm以下の範囲で篩分級処理し、篩を通過した粉末を得る方法、あるいは、第2焼成粉をボールミルや振動ミル、ジェットミル等の一般的な粉砕機を使用して所定の粒度に粉砕する方法が挙げられる。なお、粉砕機を使用する場合は、なるべく緩和な粉砕装置や粉砕条件を採用し、第2焼成粉に機械的なダメージを与えないようにすることが好ましい。
上記方法により合成したEuを賦活したβ型サイアロン粉末を純窒素以外の非酸化性雰囲気中で第2焼成工程よりも低い温度でアニール処理を行い、Eu中のEu2+の割合を高めるとともに、蛍光発光を阻害するEuを次工程での酸処理で溶解除去できるように状態を変化させる。アニール処理を行う雰囲気としては、希ガス又は還元性ガスが好ましい。希ガスは、例えば、アルゴンやヘリウムなどの第18属元素のガスである。還元性ガスは、例えばアンモニア、炭酸ガス、一酸化炭素、水素などの還元力を有するガスである。還元性ガスは、単体として使用しても、窒素や希ガスなどの中性ガスとの混合ガスでも構わない
なお、上述したD1/D2を適度な値とする観点から、上述したアニール処理をする場合、蓋付きの容器(原料が接する面が窒化ホウ素からなる坩堝等)に、Euを賦活したβ型サイアロン粉末をタッピングしながら充填し、充填度合いを適度に高めることが好ましい。充填の度合いとしては、たとえば、Euを賦活したβ型サイアロン粉末が蓋に接触するほど密な状態であることが挙げられる。
また、上述したD1/D2を適度な値とする観点から、アニール処理後のEuを賦活したβ型サイアロン粉末を従来の水準よりも速い降温速度で冷却することが好ましい。冷却条件としては、好ましくは、1000℃~1500℃の温度領域を3~10℃/分、より好ましくは、上記温度範囲を4~6℃/分で降温させることが挙げられる。
次に、アニール処理を行ったβ型サイアロン粉末に対して、酸処理を行う。酸処理に用いられる酸としては、フッ化水素酸、硫酸、リン酸、塩酸、硝酸から選ばれる1種又は2種以上の酸が用いられ、これらの酸を含む水溶液の形で使用される。この酸処理の主な目的は、アニール処理の際に生じる、蛍光や発光を阻害する化合物の除去であり、フッ化水素酸と硝酸の混酸を用いることが好ましい。この酸処理工程は、アニール処理を行ったβ型サイアロン粉末を上述の酸を含む水溶液に分散し、数分から数時間程度(例:10分以上3時間以内)、撹拌することにより、上記の酸と反応させることにより行う。酸の温度は室温でもよいが、温度が高いほど反応が進みやすいので、50℃以上80℃以下が好ましい。
酸処理工程の後、フィルター等でβ型サイアロン粉末を酸から分離し、分離されたβ型サイアロン粉末を水洗する。水洗後のβ型サイアロン粉末をフィルターを用いて濾過し、Euを賦活したβ型サイアロン蛍光体粒子を主成分とする蛍光体粉末を得る。
実施形態に係る発光装置は、発光素子と、上述した実施形態の蛍光体粉末を用いた波長変換部と、を備える。より具体的には、当該発光装置は、本実施形態の蛍光体粉末を備える白色発光ダイオード(LED)である。そのようなLEDにおいては、蛍光体粉末を封止材中に封止して使用することが好ましい。そのような封止材としては特に限定はされず、例えばシリコーン樹脂、エポキシ樹脂、ペルフルオロポリマー樹脂、ガラスなどが挙げられる。ディスプレイのバックライト用途などの高出力・高輝度が求められる用途では、高温や強い光に曝露されても耐久性を有する封止材が好ましく、この観点からシリコーン樹脂が特に好ましい。
実施例1の蛍光体粉末の製造方法について説明する。
α型窒化ケイ素粉末(宇部興産株式会社製、SN-E10グレード、酸素含有量1.0質量%)95.90質量%、窒化アルミニウム粉末(株式会社トクヤマ製、Fグレード、酸素含有量0.8質量%)2.75質量%、酸化アルミニウム粉末(大明化学工業株式会社製、TM-DARグレード)0.56質量%、酸化ユーロピウム粉末(信越化学工業株式会社製、RUグレード)0.80質量%をV型混合機(筒井理化学器械株式会社製、S-3)を用い混合し、更に目開き250μmの篩を全通させ凝集を取り除き、原料混合粉末を得た。ここでの配合比(第1の配合組成(質量%))は、β型サイアロンの一般式:Si6-zAlzOzN8-zにおいて、酸化ユーロピウムを除いて、Si/Al比から算出してz=0.22となるように設計したものである。
ここで得た第1の配合組成を有する原料混合粉末200gを、内径10cm、高さ10cmの蓋付きの円筒型窒化ホウ素容器(デンカ社製、N-1グレード)に充填し、カーボンヒーターの電気炉で0.8MPaの加圧窒素雰囲気中、1850℃で4時間の加熱処理(第1焼成工程)を行った。前記加熱処理を行った粉末を目開き45μmの篩を通過させた。なお、粉末は全て篩を通過した。この第1焼成工程を実施し、篩を通過した粉末(第1焼成粉という)と、前記第1の配合組成を有する原料混合粉末を質量比で70:30となる配合比(第2の配合組成(質量%))で配合し、前記と同様の方法により混合した。
得られた混合粉末200gを内径10cm、高さ10cmの蓋付きの円筒型窒化ホウ素容器に充填し、カーボンヒーターの電気炉で0.8MPaの加圧窒素雰囲気中、2020℃で12時間の加熱処理(第2焼成工程)を実施した。
<解砕・粉砕工程>
加熱処理後の試料は緩く凝集した塊状となっていたので、この塊をハンマーにより、粗砕した後、超音速ジェット粉砕器(日本ニューマチック工業株式会社製、PJM-80SP)により粉砕した。粉砕条件は、試料供給速度を50g/分、粉砕エア圧力を0.3MPaとした。この粉砕粉末を目開き45μmの篩を通過させた。なお、篩の通過率は96%であった。
第2焼成工程を実施し、目開き45μmの篩を通過させた粉砕粉末600gを、タッピングしながら内径10cm、高さ10cmの蓋付き円筒型窒化ホウ素容器に充填した。このとき粉末が蓋に接触するほど密に充填されていた。充填した容器をカーボンヒーターの電気炉で、大気圧アルゴン雰囲気中、1500℃で8時間のアニール処理を行った。なお、アニールの降温の際に1000℃~1500℃の温度領域を5℃/分で降温させた。前記アニール処理を行った粉末を目開き45μmの篩を通過させた。篩の通過率は95%であった。
アニール処理を行った粉末に対して、50%フッ化水素酸と70%硝酸の1:1混酸中、75℃で30分間浸す酸処理を行った。
酸処理後の粉末を沈殿させ、上澄み液と微粉を除去するデカンテーションを溶液のpHが5以上で上澄み液が透明になるまで繰り返し、最終的に得られた沈殿物をろ過、乾燥し、実施例1の蛍光体粉末を得た。粉末X線回折測定を行った結果、存在する結晶相はβ型サイアロン単相であり、β型サイアロン蛍光体が単相で得られていることを確認できた。
実施例1の第2の配合組成(質量%)を、第1焼成粉と、前記第1の配合組成を有する原料混合粉末を質量比で50:50となる配合比で配合したこと以外は、実施例1と同じ方法により実施例2の蛍光体粉末を作製した。なお、アニール処理を行った粉末を目開き45μmの篩を通過させたときの篩の通過率は95%であった。
実施例1の第2の配合組成(質量%)を、第1焼成粉と、前記第1の配合組成を有する原料混合粉末を質量比で30:70となる配合比で配合し、実施例1と同じ条件で第2焼成を行った。加熱処理後の粉砕条件を、試料供給速度を50g/分、粉砕エア圧力を0.5MPaとした。それ以外については、実施例1と同じ方法により実施例3の蛍光体粉末を作製した。なお、アニール処理を行った粉末を目開き45μmの篩を通過させたときの篩の通過率は96%であった。
アニール処理工程において、充填量を100gにし、β型サイアロン蛍光体の通常の製法にならい、タッピングせず充填したこと以外は、実施例1と同じ方法により比較例1の蛍光体粉末を作製した。なお、アニール処理を行った粉末を目開き45μmの篩を通過させたところ、粉末は全て篩を通過した。
アニール処理工程において、アニールの降温の際に1000℃~1500℃の温度領域を0.5℃/分で降温させたこと以外は、実施例1と同じ方法により比較例2の蛍光体粉末を作製した。なお、アニール処理を行った粉末を目開き45μmの篩を通過させたときの篩の通過率は84%であった。
得られた実施例1~3及び比較例1、2の蛍光体粉末について、以下の発光特性評価を行った。結果を表1に示す。
蛍光体粉末の蛍光特性は、ローダミンB法及び標準光源により校正した分光蛍光光度計(日立ハイテクノロジーズ社製、F-7000)にて、専用の固体試料ホルダーに蛍光体粉末を充填して、波長455nmに分光した励起光を照射した時の蛍光スペクトルを測定し、ピーク強度及びピーク波長を求めた。なお、ピーク強度は測定装置や条件によって変化するため単位は任意単位であり、同一条件で測定し、実施例1~3及び比較例1、2の蛍光体粉末を連続して測定した。比較例1の蛍光体粉末でのピーク強度を100%として比較した。
実施例1~3及び比較例1、2の蛍光体粉末について、以下の2条件で粒径分布の評価を行った。結果を表1に示す。
<条件1:超音波ホモジナイザを用いた前処理有のメジアン径>
蛍光体粉末30mgと、0.2%に調整したヘキサメタリン酸ナトリウム水溶液100mlとを200mlのビーカー内に採取した後、室温(25℃)でスパチュラーを用いて沈殿が生じない程度に均一に攪拌し、分散液を得た。
得られた分散液を、底面が半径2.75cm円柱状容器(内径5.5cm)に入れ、超音波ホモジナイザ(日本精機製作所社製、US-150E)の半径10mmの円柱状チップ(外径20mm)を1.0cm以上分散液に浸し、周波数19.5kHz、出力150Wで3分間超音波を照射し、測定対象溶液を得た。
フローセル方式のレーザー回折散乱式粒度分布測定装置(マイクロトラックベル社製、MT3300EXII)を用いて、上記の測定対象溶液を、循環系に充填した分散媒に投入し、測定対象試料を生成した後に、この測定対象試料を循環させながら、蛍光体粉末の粒径を測定し、各メジアン径D10、D50、D90を求めた。
上記の条件1と同様にして、分散液を用意し、上述した超音波ホモジナイザ処理を行わずに、測定対象溶液を得た。得られた測定対象溶液について、上記の条件1と同様にして、フローセル方式のレーザー回折散乱式粒度分布測定装置を用いて、蛍光体粉末の粒径を測定し、各メジアン径D10、D50、D90を求めた。
実施例1の蛍光体粉末を、赤色蛍光体としてフッ化物蛍光体であるK2SiF6蛍光体(デンカ社製、KR-3K01)とともにシリコーン樹脂(東レ・ダウコーニング社製、JCR6175)に添加して、自転公転式の混合機(シンキー社製 あわとり練太郎:ARV-310)で混合してスラリーを得た。前記スラリーをピーク波長450nmの青色LED素子を接合した表面実装タイプのパッケージにポッティングし、更にそれを熱硬化させることにより実施例4の白色LEDを作製した。β型サイアロン蛍光体とフッ化物蛍光体の添加量比は、通電発光時に白色LEDの色度座標(x,y)が(0.28,0.27)になるように調整した。
実施例4~6、比較例3、4の白色LEDを通電発光させた際の色度を全光束測定装置(大塚電子社製、直径300mm積分半球と分光光度計/MCPD-9800とを組合せた装置)によって測定した。得られた白色LEDから色度xが0.275~0.284、色度yが0.265~0.274の範囲の各10個をピックアップし、通電発光させた際の全光束の平均値を算出した。この評価結果は、比較例3の全光束の平均値を100%とした場合の相対評価とした。その結果を表2に示す。
Claims (4)
- Euを賦活したβ型サイアロン蛍光体粒子を主成分として含む蛍光体粉末であって、
超音波ホモジナイザ処理が施されていない前記蛍光体粉末において、レーザー回折式粒度分布測定装置を用いた湿式測定により測定されるメジアン径(D50)をD1とし、
以下の条件で実施される超音波ホモジナイザ処理が施された前記蛍光体粉末において、レーザー回折式粒度分布測定装置を用いた湿式測定により測定されるメジアン径(D50)をD2としたとき、
D1/D2が1.05以上1.70以下である蛍光体粉末。
(条件)
前記蛍光体粉末30mgを、濃度0.2%ヘキサメタリン酸ナトリウム水溶液100ml中に均一に分散させた分散液を、底面が内径5.5cmの円柱状容器に入れる。次に当該分散液中に、超音波ホモジナイザの外径20mmの円柱状チップを1.0cm以上浸した状態で、周波数19.5kHz、出力150Wで3分間、当該分散液に超音波を照射する。 - 前記D1が10μm以上35μm以下である請求項1に記載の蛍光体粉末。
- 前記D2が8μm以上25μm以下である請求項1または2に記載の蛍光体粉末。
- 発光素子と、
請求項1乃至3のいずれか一項に記載の蛍光体粉末を用いた波長変換部と、
を備える発光装置。
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CN116569348A (zh) * | 2020-12-04 | 2023-08-08 | 电化株式会社 | 荧光体粒子和发光装置 |
WO2024203353A1 (ja) * | 2023-03-30 | 2024-10-03 | デンカ株式会社 | 蛍光体粉末及び発光装置 |
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KR20220002390A (ko) | 2022-01-06 |
TW202104550A (zh) | 2021-02-01 |
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CN113710772B (zh) | 2024-01-02 |
JPWO2020218109A1 (ja) | 2020-10-29 |
US11781064B2 (en) | 2023-10-10 |
US20220204842A1 (en) | 2022-06-30 |
CN113710772A (zh) | 2021-11-26 |
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