WO2020216776A1 - Composant micromécanique comprenant une membrane et une cavité, et procédé de fabrication associé - Google Patents

Composant micromécanique comprenant une membrane et une cavité, et procédé de fabrication associé Download PDF

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Publication number
WO2020216776A1
WO2020216776A1 PCT/EP2020/061170 EP2020061170W WO2020216776A1 WO 2020216776 A1 WO2020216776 A1 WO 2020216776A1 EP 2020061170 W EP2020061170 W EP 2020061170W WO 2020216776 A1 WO2020216776 A1 WO 2020216776A1
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WO
WIPO (PCT)
Prior art keywords
silicon
etch stop
substrate surface
medium
substrate
Prior art date
Application number
PCT/EP2020/061170
Other languages
German (de)
English (en)
Inventor
Stefan Majoni
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2020216776A1 publication Critical patent/WO2020216776A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B43/00—Machines, pumps, or pumping installations having flexible working members
    • F04B43/02—Machines, pumps, or pumping installations having flexible working members having plate-like flexible members, e.g. diaphragms
    • F04B43/04—Pumps having electric drive
    • F04B43/043—Micropumps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B43/00—Machines, pumps, or pumping installations having flexible working members
    • F04B43/02—Machines, pumps, or pumping installations having flexible working members having plate-like flexible members, e.g. diaphragms
    • F04B43/04—Pumps having electric drive
    • F04B43/043—Micropumps
    • F04B43/046—Micropumps with piezoelectric drive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/032—Bimorph and unimorph actuators, e.g. piezo and thermo
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/036—Micropumps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/05—Microfluidics
    • B81B2201/052—Ink-jet print cartridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/10—Microfilters, e.g. for gas or fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate

Definitions

  • the invention relates to a micromechanical component and a
  • Manufacturing processes for micromechanical components each with a medium space delimited by a membrane are known from the prior art, in which a recess in the form of the later medium space is structured in a first substrate and then the first substrate on a second substrate with the membrane formed thereon is firmly bonded.
  • Such a method for producing a micromechanical component is disclosed, for example, in DE 10 2014 214 532 B3.
  • the invention creates a micromechanical component with the features of claim 1 and a production method for a micromechanical component with the features of claim 7.
  • the present invention creates micromechanical components in which a medium present in the respective medium space of the micromechanical component comes into contact exclusively with silicon of the silicon substrate of the respective micromechanical component.
  • the silicon substrate of the respective micromechanical component has a reliable resistance to a large number of media, which can be in the form of a fluid / liquid, a gel, a gas and / or as grains / microparticles.
  • media can be in the form of a fluid / liquid, a gel, a gas and / or as grains / microparticles.
  • Invention created micromechanical components therefore for a variety of purposes for a comparatively long life.
  • micromechanical components created by means of the present invention can also be produced relatively inexpensively. Furthermore, the micromechanical components can be designed with great design freedom.
  • the silicon substrate is completely grown in at least two silicon growth steps, starting from an initial layer made of silicon
  • Silicon substrate Such a completely grown silicon substrate has a reliable resistance to a large number of media, such as, for example, oxidative, organic, alkaline and / or acidic media.
  • the silicon substrate encompassed by the embodiment of the micromechanical component described here thus withstands a large number of media present / filled in its medium space for a relatively long time, often (almost) indefinitely.
  • the substrate surface is free of bond layers.
  • the silicon substrate is thus between its first substrate surface and its second
  • Substrate surface also free of aluminum / germanium bond layers, compression bond layers, such as in particular gold / gold bond layers, seal glass bond layers and organic bond layers, such as special BCB bond layers.
  • Such bonding layers are chemically attacked by a large number of media.
  • the silicon substrate is free from between its first substrate surface and its second substrate surface
  • Bond layers there does not have to be a contamination of the at least one medium present in its medium space with at least one Bond layer material are still feared with a decomposition of the medium space due to a chemical reaction of the bond layer with the at least one medium present in the medium space.
  • At least one further opening of the medium space is formed in the silicon substrate such that the medium space can be filled and / or emptied via the at least one further opening, the at least one further opening being through the first substrate surface, the second substrate surface and / or through at least one substrate side surface of the silicon substrate that extends from the first substrate surface to the second substrate surface. Filling or emptying the medium space of the embodiment of the micromechanical component described here is thus easily possible.
  • At least one screen structure can be formed on and / or within the at least one further opening.
  • micromechanical component can be reliably prevented.
  • the micromechanical component can be a print head, a
  • micromechanical component according to the invention is thus versatile
  • micromechanical components are not to be interpreted restrictively.
  • the medium space in the silicon substrate is designed so that the medium space can be filled and / or emptied via the at least one further opening, the at least one further opening through the first substrate surface, the second substrate surface and / or through at least one extending from the first substrate surface to the Second substrate surface extending substrate side surface of the silicon substrate runs.
  • the micromechanical component with the medium space that can be easily filled and / or emptied can thus be produced with comparatively little effort.
  • the silicon substrate is based on a
  • Starting layer made of silicon completely formed in at least two silicon growth steps. Silicon growth methods which can be used as the at least two silicon growth steps are known from the prior art. The silicon substrate is therefore comparatively easy to manufacture.
  • At least one intermediate silicon growth step and a final silicon growth step are carried out as the at least two silicon growth steps, the following method steps being carried out one after the other:
  • the side of the starting layer facing away from the substrate surface or an intermediate product grown starting from the starting layer is grown, with a partial area of the side of the intermediate product facing away from the first substrate surface being covered with a further etch stop layer after each intermediate silicon growth step carried out, and with etching stop walls being formed , which connect the first etch stop layer and the at least one further etch stop layer to one another in such a way that the first etch stop layer, the at least one further etch stop layer and the etch stop walls form an etch stop delimitation which surrounds a volume filled with silicon except for at least one etch opening, and the membrane is formed by Carrying out the last silicon growth step by growing silicon on the side facing away from the first substrate surface starting from the starting layer in the at least one intermediate silicon growth step en intermediate product is grown up.
  • the embodiment of the manufacturing method described here can be carried out comparatively easily. As a starting material for those described here
  • an SOI wafer silicon on isolator wafer
  • a silicon substrate / silicon wafer can optionally be used.
  • the medium space is structured into the silicon substrate, which has grown completely in the at least two silicon growth steps starting from the starting layer, by etching the volume surrounded by the etch stop delimitation, and then the inner walls of the medium space from the first etch stop layer, which at least one further etch stop layer and the etch stop walls are exposed.
  • the structuring of the medium space in the fully grown silicon substrate is thus easy to carry out, wherein, as will be explained in more detail below, advantageous shapes of the medium space can be implemented by means of the first etch stop layer, the at least one further etch stop layer and the etch stop walls.
  • the first etch stop layer, the at least one further etch stop layer and the etch stop walls can be formed from silicon oxide, with that of the first etch stop layer, the at least one further
  • Etch stop layer and the etch stop walls surrounding silicon by means of
  • Xenon difluoride and / or sulfur hexafluoride is etched.
  • the structuring of the medium space in the completely grown silicon substrate is therefore possible without any problems, without undesired areas of the silicon substrate being etched at the same time.
  • the first etch stop layer, the at least one further etch stop layer and the etch stop walls are formed from silicon oxide, the
  • Inner walls of the medium space are preferably exposed by the first
  • Etch stop layer the at least one further etch stop layer and the
  • Etch stop walls are removed in a gas phase etching process. Silicon oxide can be removed easily and reliably using a gas phase etching process. Thus, during a later operation of the micromechanical component produced by means of the embodiment of the production method described here, there is no need to fear contamination of the at least one medium present in its medium space with silicon dioxide.
  • At least two intermediate silicon growth steps are carried out before the last silicon growth step.
  • various advantageous shapes of the medium space can be formed in this way without any problems.
  • At least one screen structure can be formed on and / or within the at least one further opening by growing silicon on the side of the intermediate product facing away from the first substrate surface.
  • the formation of the at least one screen structure on and / or within the at least one further opening is thus easily possible.
  • further design elements can be formed by the mentioned or further intermediate silicon growth steps, such as for example at least one support structure and / or at least one structure for preventing the propagation of pressure waves.
  • FIG. 2 shows a schematic illustration of a first specific embodiment of the micromechanical component
  • FIG. 3 shows a schematic cross section through an intermediate product for explaining a second embodiment of the
  • FIG. 4 shows a schematic illustration of a second specific embodiment of the micromechanical component
  • FIG. 5 shows a schematic illustration of a third specific embodiment of the micromechanical component
  • FIG. 6 shows a schematic illustration of a fourth specific embodiment of the micromechanical component
  • FIG. 7 shows a schematic illustration of a fifth specific embodiment of the micromechanical component
  • FIG. 8a to 8c schematic cross sections through intermediate products for
  • FIG. 9 shows a schematic illustration of a sixth embodiment of the micromechanical component; 10 shows a schematic illustration of a seventh specific embodiment of the micromechanical component;
  • FIG. 11 shows a schematic illustration of an eighth embodiment of the micromechanical component
  • FIG. 13 shows a schematic illustration of a ninth specific embodiment of the micromechanical component.
  • FIG. 14 shows a schematic illustration of a tenth embodiment of the micromechanical component.
  • the micromechanical component described have a plurality of such cells, or can be produced with a plurality of such cells.
  • FIGS. 1 a to 1e show schematic cross-sections through intermediate products to explain a first embodiment of the production method for a micromechanical component.
  • a completely grown silicon substrate 10 with a first substrate surface 12a and a second one directed away from the first substrate surface 12a is produced
  • Substrate surface 12b is formed in that the silicon substrate 10 is completely formed starting from an initial layer 10a of silicon in at least two silicon growth steps or epitaxial steps.
  • At least one intermediate silicon growth step and a final silicon growth step are carried out as the at least two silicon growth steps.
  • Each of the at least two silicon growth steps can be referred to as a silicon epitaxy step.
  • 1 a shows a cross section through the starting layer 10a made of silicon with the first present as the surface of the starting layer 10a
  • the starting layer 10a can, for example, be part of an SOI wafer (Silicone On Isolator Wafer), the first substrate surface 12a being aligned with a semiconductor wafer 14 and an insulating layer 16 arranged between the semiconductor wafer 14 and the starting layer 10a made of silicon.
  • SOI wafer Silicon On Isolator Wafer
  • the semiconductor wafer 14 can during the
  • Manufacturing process fulfill the functions of a "handling wafer”.
  • Medium outlet opening 18 is structured by the output layer 10a.
  • the medium outlet opening 18 can, for example, be etched / separated by the starting layer 10.
  • the starting layer 10a formed with the medium outlet opening 18 forms a first supporting wall 19 of the later medium space on its side aligned with the first substrate surface 12a.
  • only the semiconductor wafer 14 (consisting of silicon in this case) can also be used as the starting material.
  • the semiconductor wafer 14 consisting of silicon in this case
  • the medium outlet opening 18 is structured through the first substrate surface 12a, which is later thinned back (from the starting layer 10a), in that the medium outlet opening 18 is structured in / through the semiconductor wafer 14 and the first substrate surface 12a with the exposed medium outlet opening 18 is formed later for thinning back the semiconductor wafer 14.
  • the semiconductor wafer 14 can be thinned back, for example, a chemical or physical grinding back of the semiconductor wafer 14 can be carried out.
  • a partial area of a side 20 of the starting layer 18 facing away from the first substrate surface 12a is coated with a first
  • Etch stop layer 22 covered.
  • the first etch stop layer 22 defines the positions and dimensions of inner walls of the later medium space on its to the first
  • Substrate surface 12a facing side firmly.
  • a first intermediate silicon growth step is then carried out in that silicon is grown on the side 20 of the starting layer 10a facing away from the first substrate surface 12a.
  • a first silicon region 24 is formed, which at least in regions merges into the starting layer 10a which is only partially covered by the first etch stop layer 22.
  • the first silicon region 24 is thus grown directly / compactly on the starting layer 10a.
  • etch stop walls (not shown) are formed, via which the first etch stop layer 22 and the second etch stop layer 26 are connected to one another.
  • the etch stop walls can be formed by structuring separating trenches through the first silicon region 24 and filling the separating trenches with at least one etch stop material of the etching stop walls. The intermediate product produced in this way is shown in FIG.
  • a second intermediate silicon growth step is then carried out, in which silicon is grown on the side 20 of the side 20 which is grown starting from the starting layer 10a and which faces away from the first substrate surface 12a
  • a second silicon region 28 is grown on a side of the first silicon region 24 facing away from the starting layer 10a, which is at least regionally in the first silicon region which is only partially covered by the second etch stop layer 26 Silicon area 24 passes over.
  • the second silicon region 28 is thus also grown directly / compactly on the first silicon region 24 and the starting layer 10a.
  • the second silicon region 28 forms a large part of a second supporting wall 30 of the later medium space on its to the second
  • Substrate surface 12b aligned side.
  • etch stop walls 32 are formed which extend through the second silicon region 28.
  • the formation of the etch stop walls 32 can be carried out by structuring separating trenches through the second silicon region 28 and then filling the
  • Separating trenches are made with at least one etch stop material of the etch stop walls 32.
  • the intermediate product obtained is shown in FIG.
  • a third etch stop layer 34 is formed on a partial area of the side 20 of the intermediate product directed away from the first substrate surface 12a.
  • the etch stop walls 32 connect the second etch stop layer 26 and the third etch stop layer 34 to one another.
  • the second etch stop layer 26, the third etch stop layer 34 and the etch stop walls 32 define positions and extensions of inner walls of the later
  • the first etch stop layer 22, the second etch stop layer 26, the third etch stop layer 34 and the etch stop walls 32 are formed such that the first etch stop layer 22, the second etch stop layer 26, the third etch stop layer 34 and the etch stop walls 32 a
  • Etch stop delimitation 22, 26, 32 and 34 form which surrounds a volume filled with silicon apart from at least one etching opening 35.
  • the etch stop delimitation 22, 26, 32 and 34 defines a shape and a spatial extent of the later medium space.
  • FIG. 1D also shows the formation of a membrane 36 on the second substrate surface 12b, which is directed away from the first substrate surface 12a, by adding silicon in the last silicon growth step to that of the first
  • Substrate surface 12a facing away side 20 of the intermediate product grown starting from the starting layer 10a is grown.
  • the silicon of the membrane 36 can in particular directly on the third Etch stop layer 34 are deposited, which ensures that the membrane 36 formed in this way delimits the later medium space.
  • the completely grown silicon substrate 10 is ready. To protect the second
  • a protective and / or insulating layer 37 such as an oxide layer, can be formed on the second substrate surface 12b of the silicon substrate 10. That won in this way
  • an actuator device 38 can now be arranged / formed on the membrane 36 in such a way that, during later operation of the micromechanical component formed with the actuator device 38, the membrane 36 is set into a deforming movement by means of the actuator device 38 in such a way that at least one is in the subsequent medium space present medium is pressed out of the medium space via the medium outlet opening 18.
  • the actuator device 38 is, for example, a piezoelectric actuator device with at least one piezoelectric functional layer 38a, electrodes 38b and at least one conductor track 38c with at least one contact area 38d.
  • the at least one piezoelectric functional layer 38a can be, for example, a PZT functional layer (lead zirconate titanate). Since the possibility of designing the micromechanical component produced by means of the manufacturing method described here is not limited to a specific type of its actuator device 38, the actuator device 38 is not discussed in more detail here.
  • the structuring of the medium space 40 in the silicon substrate 10 is also shown graphically in FIG.
  • the medium space 40 is structured in the silicon substrate 10, which has grown completely starting from the starting layer 10a, by etching the silicon surrounded by the etch stop delimitation 22, 26, 32 and 34.
  • the silicon substrate 10 which are not to be etched, such as in particular the membrane 36, by means of the at least one Etch stop material of the etch stop limitation 22, 26, 32 and 34 reliably protected.
  • the inner walls of the medium space 40 are covered by the first etch stop layer 22, the second etch stop layer 26 and the third
  • the medium space 40 can first be freely etched before the formation of the actuator device 38 on / in the membrane 36 is started.
  • the etch stop delimitation 22, 26, 32 and 34 is preferably formed from silicon oxide (as its at least one etch stop material).
  • the components of the etch stop delimitation 22, 26, 32 and 34 can thus each be formed by means of a comparatively low amount of work, such as, for example, by performing a thermal oxidation or by means of an oxide deposition.
  • Another advantage of using silicon oxide as the (only) etch stop material of the etch stop delimitation 22, 26, 32 and 34 is that the silicon surrounded by the etch stop delimitation 22, 26, 32 and 34 in this case is preferably by means of xenon difluoride and / or
  • Sulfur hexafluoride can be etched, as a result of which the silicon to be etched can be reliably removed, and nevertheless (almost) no etching of the etch stop delimitation 22, 26, 32 and 34 is to be feared.
  • silicon oxide as the (only) etching material
  • Etch stop delimitation 22, 26, 32 and 34 the inner walls of the medium space 40 can be exposed comparatively easily by removing the etch stop delimitation 22, 26, 32 and 34 in a gas phase etching process.
  • silicon oxide silicon nitride can also be used as the etch stop material of the etch stop delimitation 22, 26, 32 and 34.
  • at least one further opening 42 and 44 of the medium space 40 is formed in the silicon substrate 10 in such a way that the medium space 40 over the at least one further Opening 42 and 44 can be filled / emptied.
  • the at least one etching opening 35 can thus be used in many ways.
  • the at least one further opening 42 and 44 runs through at least one extending from the first substrate surface 12a to the second substrate surface 12b
  • a cap (not shown) can be attached to an outer side of the membrane 36 and the actuator device 38 facing away from the medium space 40.
  • the capping can be
  • sealing glass bonding and / or eutectic bonding using aluminum and germanium can be carried out as the bonding method for fastening the capping.
  • the semiconductor wafer 14 can also be removed.
  • FIG. 2 shows a schematic illustration of a first specific embodiment of the micromechanical component.
  • micromechanical component shown schematically in FIG. 2 can, for example, by means of the previously described embodiment of the micromechanical component shown schematically in FIG. 2
  • the micromechanical component has a completely grown silicon substrate 10 with a first substrate surface 12a and a second substrate surface 12b directed away from the first substrate surface 12a.
  • the silicon substrate 10 is a silicon substrate 10 that is completely grown in at least two silicon growth steps starting from an initial layer 10a made of silicon.
  • the silicon substrate 10 is free of bonding layers between its first substrate surface 12a and its second substrate surface 12b.
  • a medium space 40 is structured in the silicon substrate 10.
  • the medium space 40 has a structure structured by the first substrate surface 12a Medium outlet opening 18.
  • the medium outlet opening 18 can also be referred to as a nozzle.
  • a membrane 36 which delimits the medium space 40, is formed on the second substrate surface 12b.
  • An actuator device 38 is arranged on the membrane 36 in such a way that the membrane 36 can be set into a deforming movement by means of the actuator device 38 such that at least one medium present in the medium space 40 can be pushed out of the medium space 40 via the medium outlet opening 18.
  • a bulge of the membrane 36 into the medium space 40 can in particular cause a drop at the medium outlet opening 18.
  • the actuator device 38 is preferably in a direction away from the medium space 40
  • Substrate surface 12b need not fear that the at least one medium present in medium space 40 will chemically attack a bond and thus lead to decomposition of the micromechanical component. Likewise, the at least one medium present in the medium space 40 does not have to be contaminated by at least one bonding material
  • Bond connection are feared.
  • a high demand for purity of the at least one medium present in the medium space 40 such as for a medical / medical technology or a medium
  • the micromechanical component is therefore versatile, such as an insulin pump, a laboratory chip, a sensor or a probe. In the embodiment of FIG. 2 this is
  • micromechanical component a printhead / printhead part, whereby even strongly alkaline or organic inks can be filled into the interior of the medium space 40 without any problems, since an ink filled in the medium space 40 only contacts the inner walls of the medium space 40 made of silicon and thus does not / hardly attack the micromechanical component .
  • Medium space 40 made of (pure) silicon also simplifies the application of a continuous protective layer for media that attack silicon, since the Protective layer only has to adhere to silicon and not to a bonding material. .
  • the medium space 40 has, on its side aligned with the first substrate surface 12a, a first support wall 19, the wall thickness of which, aligned perpendicular to the first substrate surface 12a, is defined by the layer thickness of the previous starting layer 10a. His to the second
  • the medium space 40 is delimited by a second support wall 30 and the membrane 36, an overhang of the second support wall 30 aligned perpendicular to the second substrate surface 12b relative to the membrane 36 being defined by the layer thickness of the previous second silicon region 28.
  • at least one further opening 42 and 44 of the medium space 40 (as a medium supply opening 42 and as a medium discharge opening 44) is structured in the silicon substrate 10 so that the medium space 40 can be filled via the at least one further opening 42 and 44 / or can be emptied.
  • the at least one further opening 42 and 44 runs through at least one substrate side surface 12c and 12d of the silicon substrate 10 that extends from the first substrate surface 12a to the second substrate surface 12b.
  • Actuator device 38 attached.
  • the capping 46 is fastened to the outside of the membrane 36 and the actuator device 38 by means of at least one bond connection 48.
  • FIG. 3 shows a schematic cross section through an intermediate product for explaining a second embodiment of the manufacturing method.
  • the medium space 40 becomes at one of the medium outlet opening 18
  • Adjacent area is expanded by an exit opening antechamber 50 designed as a recess in the first support wall 19, in that the first support wall 19 by means of an additional intermediate silicon growth step, which is carried out before the first intermediate silicon growth step, by a growth directly on the starting layer 10a further silicon area 52 is reinforced.
  • An etch stop layer 54 and etch stop walls 56, which define the subsequent shape of the exit opening vestibule 50, can also be seen.
  • FIG. 4 shows a schematic illustration of a second specific embodiment of the micromechanical component.
  • the micromechanical component shown schematically in FIG. 4 can be produced, for example, by means of the production method explained with reference to FIG. 3.
  • the outlet opening antechamber 50 formed on an area of the medium chamber 40 adjacent to the medium outlet opening 18 offers volume for an advantageous eddy current in front of that of the medium outlet opening 18.
  • the outlet opening antechamber 50 enables the formation of a very short medium outlet opening 18 without restricting the stability of the first supporting wall 19 of the medium chamber 40 .
  • the micromechanical component of FIG. 4 also has a medium outlet opening 18 with a smaller length perpendicular to the first substrate surface 12a.
  • a desired diameter and an advantageous shape of the medium outlet opening 18 can thus be adhered to more easily and more accurately in the production of the micromechanical component of FIG. 4, whereby a desired drop size of a drop emerging from the medium outlet opening 18 or a defined tear-off of the drop can be better guaranteed and bubbles and drying residue on the
  • Forming the exit opening antechamber 50 as a recess in the first support wall 19 by means of the additional intermediate silicon growth step ensures at the same time that the first support wall 19 continues to have advantageous stability.
  • FIG. 5 shows a schematic illustration of a third specific embodiment of the micromechanical component.
  • the micromechanical component shown schematically in FIG. 5 differs from the previously described embodiment only by a funnel-shaped design of its medium outlet opening 18 with a diameter that decreases in the direction of the first substrate surface 12a.
  • the funnel-shaped design of the medium outlet opening 18 is e.g. can be implemented using a KOH / potassium hydroxide etching process or a conical trench etching (tapered trench etching).
  • FIG. 6 shows a schematic illustration of a fourth specific embodiment of the micromechanical component.
  • Throttle valve 58 designed as constrictions at the respective further openings 42 and 44.
  • an antechamber 60 of the medium chamber 40 is created as an (additional) recess in the first support wall 19 by means of an additional intermediate silicon growth step which is carried out prior to the first intermediate silicon growth step by another
  • Silicon area 62 is reinforced.
  • Throttle valve 58 is deposited in the first intermediate silicon growth step, using previously formed etch stop layers and Etch stop walls an etching of the silicon of the at least one throttle valve 58 is prevented during the structuring of the medium space 40.
  • the at least one throttle valve 58 By means of the at least one throttle valve 58, a transmission of vibrations from the membrane 36 of the illustrated cell via the at least one medium filled in the medium space 40 to a membrane 36 of an adjacent cell (not illustrated) can be prevented. In this way, crosstalk between cells of a micromechanical component formed with a plurality of cells, which could lead to an undesired increase in the size of a droplet emerging from the medium outlet opening 18 of a cell, can be reliably prevented.
  • FIG. 7 shows a schematic illustration of a fifth specific embodiment of the micromechanical component.
  • the micromechanical component shown schematically in FIG. 7 has, as a supplement to the embodiment described above, at least one screen structure 64 and / or within its at least one further opening 42 and 44.
  • the at least one screen structure 64 is preferably on and / or within the at least one further opening 42 and 44
  • FIGS. 8a to 8c show schematic cross-sections through intermediate products to explain a third embodiment of the production method.
  • the micromechanical component shown schematically by means of FIGS. 8a to 8c differs from the embodiment of FIG. 2 in that the at least one further opening 42 and 44 runs through the second substrate surface 12b.
  • a capping 46 is firmly bonded to the outside of the membrane 36 and the actuator device 38 facing away from the medium space 40, in which a medium storage space 66 and a medium outflow space 68 are structured so that the at least one further Opening 42 and 44 in the medium storage space 66 or in the medium outflow space 68 opens. This is shown schematically in Fig. 8a.
  • FIG. 8b shows the structuring of the medium space 40 and the gas phase etching, both processes being carried out after the solid bonding of the capping 46 via the medium storage space 66, via the at least one further opening 42 and 44 and via the medium drainage space 68.
  • a silicon protective layer 70 is deposited in order to protect the bond connections 48 from being wetted with the at least one medium before the at least one medium is filled into the medium space 40.
  • the silicon protective layer 70 can be applied, for example, by sputtering.
  • the protrusions 72 shown of the capping 46 can then be removed by sawing or grinding back.
  • FIG. 9 shows a schematic illustration of a sixth specific embodiment of the micromechanical component.
  • micromechanical component shown schematically in FIG. 9 can be produced, for example, by means of the production method of FIGS. 8a to 8c. With regard to further properties of the micromechanical component of FIG. 9, reference is therefore made to the statements relating to those described above
  • Embodiments referenced. 10 shows a schematic illustration of a seventh specific embodiment of the micromechanical component.
  • At least one screen structure 74 is formed on and / or within the at least one further opening 42 and 44.
  • the at least one screen structure 74 can be produced together with the membrane 36 in the last silicon growth step.
  • the at least one screen structure 74 can be designed as a "membrane with holes”.
  • FIG. 11 shows a schematic illustration of an eighth specific embodiment of the micromechanical component.
  • damper membrane 76 in addition to the membrane 36.
  • the damper membrane 76 can be used to ensure that pressure waves generated by the actuator device 38 with deformation of the membrane 36 in the at least one in the
  • Medium space 40 present medium are attenuated and not transferred to at least one neighboring cell.
  • the damper membrane 76 is a polyimide membrane.
  • the polyimide of the damper membrane 76 can in this case after the formation of the
  • Actuator device 38 are deposited and structured.
  • FIGS. 12a to 12d show schematic cross sections through intermediate products for explaining a fourth embodiment of the production method.
  • a separate etching opening 78 of the later medium space 40 is formed. Also, the second
  • Substrate surface 12b is covered with a thick etch protection layer 80, such as an oxide layer, except for the etching opening 78 / an area surrounding the etching opening 78 (see FIG. 12a).
  • etch protection layer 80 such as an oxide layer
  • the etching opening 78 is closed (see FIG. 12c). This can be done for example by means of a local melting of silicon, e.g. by means of a laser sealing process (laser reseal), or by means of a material deposition.
  • the bond connections 48 for fastening the capping 46 are made on a direction away from the medium space 40
  • FIG. 13 shows a schematic illustration of a ninth specific embodiment of the micromechanical component.
  • the micromechanical component shown schematically in FIG. 13 can be manufactured, for example, by means of the manufacturing method of FIGS. 1 a to 1e and 12a to 12d described above.
  • FIG. 14 shows a schematic illustration of a tenth embodiment of the micromechanical component.
  • the at least one further opening 42 and 44 runs through the first substrate surface 12a.
  • the at least one screen structure 82 at the at least one further opening 42 and 44 can be through the
  • Output layer 10a be structured.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un composant micromécanique comprenant un substrat en silicium (10) totalement naturel pourvu d'une première surface (12a) de substrat et d'une seconde surface (12b) de substrat dirigée de manière à s'éloigner de la première surface (12a) de substrat, une chambre de milieu (40) structurée dans le substrat en silicium (10), pourvue d'une ouverture de sortie (18) de milieu structurée par la première surface (12a) de substrat et une membrane (36) réalisée sur la seconde surface (12b) de substrat, que délimite la chambre de milieu (40). Un dispositif actionneur (38) peut être disposé ou est disposé de telle manière sur la membrane (36) que la membrane (36) peut être amenée de telle sorte dans un mouvement de déformation au moyen du dispositif actionneur (38) qu'au moins un milieu présent dans la chambre de milieu (40) peut être sorti sous pression hors de la chambre de milieu (40) par l'intermédiaire de l'ouverture de sortie (18) de milieu. L'invention concerne également un procédé de fabrication d'un composant micromécanique de ce type.
PCT/EP2020/061170 2019-04-26 2020-04-22 Composant micromécanique comprenant une membrane et une cavité, et procédé de fabrication associé WO2020216776A1 (fr)

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DE102019206007.2 2019-04-26
DE102019206007.2A DE102019206007A1 (de) 2019-04-26 2019-04-26 Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10054484A1 (de) * 2000-11-03 2002-05-08 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
DE102005042648A1 (de) * 2005-09-08 2007-03-22 Robert Bosch Gmbh Verfahren zur Herstellung von kommunizierenden Hohlräumen
EP2138454A1 (fr) * 2008-06-23 2009-12-30 Commissariat a L'Energie Atomique Substrat hétérogène comportant une couche sacrificielle et son procédé de réalisation
DE102014214532B3 (de) 2014-07-24 2015-10-08 Robert Bosch Gmbh Bauteil mit einem MEMS-Bauelement und einer Kappenstruktur mit Medienanschlussöffnung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10054484A1 (de) * 2000-11-03 2002-05-08 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
DE102005042648A1 (de) * 2005-09-08 2007-03-22 Robert Bosch Gmbh Verfahren zur Herstellung von kommunizierenden Hohlräumen
EP2138454A1 (fr) * 2008-06-23 2009-12-30 Commissariat a L'Energie Atomique Substrat hétérogène comportant une couche sacrificielle et son procédé de réalisation
DE102014214532B3 (de) 2014-07-24 2015-10-08 Robert Bosch Gmbh Bauteil mit einem MEMS-Bauelement und einer Kappenstruktur mit Medienanschlussöffnung

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