WO2020216360A1 - Système de salle blanche pour la fabrication de semi-conducteurs et procédé associé d'élimination de poussière à champ électrique - Google Patents

Système de salle blanche pour la fabrication de semi-conducteurs et procédé associé d'élimination de poussière à champ électrique Download PDF

Info

Publication number
WO2020216360A1
WO2020216360A1 PCT/CN2020/086855 CN2020086855W WO2020216360A1 WO 2020216360 A1 WO2020216360 A1 WO 2020216360A1 CN 2020086855 W CN2020086855 W CN 2020086855W WO 2020216360 A1 WO2020216360 A1 WO 2020216360A1
Authority
WO
WIPO (PCT)
Prior art keywords
electric field
anode
cathode
clean room
dust removal
Prior art date
Application number
PCT/CN2020/086855
Other languages
English (en)
Chinese (zh)
Inventor
唐万福
赵晓云
王大祥
段志军
邹永安
奚勇
Original Assignee
上海必修福企业管理有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202010323654.3A external-priority patent/CN113522526A/zh
Priority claimed from CN202010322636.3A external-priority patent/CN113522525A/zh
Application filed by 上海必修福企业管理有限公司 filed Critical 上海必修福企业管理有限公司
Priority to CN202080030944.7A priority Critical patent/CN114072619A/zh
Publication of WO2020216360A1 publication Critical patent/WO2020216360A1/fr

Links

Images

Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L9/00—Disinfection, sterilisation or deodorisation of air
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/01—Pretreatment of the gases prior to electrostatic precipitation
    • B03C3/011—Prefiltering; Flow controlling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/02—Plant or installations having external electricity supply
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/02—Plant or installations having external electricity supply
    • B03C3/04—Plant or installations having external electricity supply dry type
    • B03C3/06—Plant or installations having external electricity supply dry type characterised by presence of stationary tube electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B03C3/40—Electrode constructions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B03C3/40—Electrode constructions
    • B03C3/41—Ionising-electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B03C3/40—Electrode constructions
    • B03C3/45—Collecting-electrodes
    • B03C3/47—Collecting-electrodes flat, e.g. plates, discs, gratings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • B03C3/34—Constructional details or accessories or operation thereof
    • B03C3/40—Electrode constructions
    • B03C3/45—Collecting-electrodes
    • B03C3/49—Collecting-electrodes tubular
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F1/00—Room units for air-conditioning, e.g. separate or self-contained units or units receiving primary air from a central station
    • F24F1/02—Self-contained room units for air-conditioning, i.e. with all apparatus for treatment installed in a common casing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F7/00—Ventilation
    • F24F7/04—Ventilation with ducting systems, e.g. by double walls; with natural circulation
    • F24F7/06—Ventilation with ducting systems, e.g. by double walls; with natural circulation with forced air circulation, e.g. by fan positioning of a ventilator in or against a conduit

Definitions

  • the invention belongs to the field of air purification, and relates to a clean room system for semiconductor manufacturing and an electric field dust removal method thereof, as well as a semiconductor manufacturing system and a semiconductor manufacturing method.
  • the clean room is a commonly used manufacturing workshop environment in the semiconductor manufacturing process.
  • the purpose is to avoid particles, humidity, temperature and other pollution of semiconductor materials, which in turn affects the yield and reliability of semiconductors.
  • each clean room has a different air cleanliness level, which is usually divided by the maximum concentration limit of a certain particle size in the clean room.
  • different air cleanliness levels have different requirements for the cleanliness of the airflow entering the clean room.
  • the existing semiconductor manufacturing plant is a three-story building.
  • the clean room is arranged on the middle level of the plant, that is, the second floor.
  • the third level of the plant is equipped with a purification system, including the installation between the third floor and the second floor.
  • the air enters from the third floor, and the air entering the third floor is purified by the purification system.
  • the purified gas is input to the clean room on the second floor, and the gas generated in the clean room is discharged into the first floor of the factory building.
  • the layer always maintains negative pressure to ensure that the clean room on the second layer always keeps air out to the first layer, and dust cannot suck in.
  • the existing semiconductor manufacturing plant occupies a large space and the construction cost is high; the filter cotton about 1 meter later is spread between the second and third floors of the plant, which needs to be replaced regularly, which leads to increased use costs.
  • an electric field device is also used to remove dust and purify the particles contained in the dust-containing gas.
  • the basic principle is to use high-voltage discharge to generate plasma to charge the particles, and then adsorb the charged particles to the dust collecting electrode to achieve electric field dust removal.
  • the existing electric field device can overcome the shortcomings of large space occupation, high construction cost, and high power consumption in the existing semiconductor manufacturing plant, the current semiconductor manufacturing requires more and more dust removal, and the existing electric field device cannot meet the corresponding requirements .
  • the existing semiconductor manufacturing size is generally below 100 nm, and 50 nm dust particles are only allowed to be 2 particles/m 3 , and the existing electric field devices cannot effectively remove particles of this level.
  • the purpose of the present invention is to provide a clean room system for semiconductor manufacturing and its electric field dust removal method, which is used to solve the problem of large power consumption and large volume of air purification technology in the field of semiconductor manufacturing.
  • the cost is high, and at least one technical problem cannot be removed from the nano-scale particles in the air.
  • the invention also provides a semiconductor manufacturing system and a semiconductor manufacturing method.
  • Some embodiments of the present invention can achieve a removal efficiency of more than 99.99% for particles with a particle diameter of 23 nm under the working condition of a gas flow rate of 6 m/s, and the removal efficiency is high, which can meet the high requirements of the semiconductor manufacturing environment.
  • the present invention can achieve effective removal of particulate matter at a high flow rate, the required electric field device is small in size, low in cost, and can reduce operating electricity costs.
  • Example 1 provided by the present invention: a clean room system for semiconductor manufacturing, including a clean room, an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system inlet, a dust removal system outlet, Electric field device; the gas inlet of the clean room communicates with the outlet of the dust removal system of the electric field dust removal system.
  • Example 2 provided by the present invention: including the above example 1, wherein the electric field device includes an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionization electric field.
  • Example 3 provided by the present invention: including the above example 2, wherein the electric field device further includes an electric field device inlet and an electric field device outlet; the electric field anode includes a first anode portion and a second anode portion, the first anode The part is close to the entrance of the electric field device, the second anode part is close to the outlet of the electric field device, and at least one cathode support plate is arranged between the first anode part and the second anode part.
  • Example 4 provided by the present invention: including the above example 3, wherein the electric field device further includes an insulation mechanism for achieving insulation between the cathode support plate and the electric field anode.
  • Example 5 provided by the present invention: including the above example 4, wherein an electric field flow channel is formed between the electric field anode and the electric field cathode, and the insulating mechanism is arranged outside the electric field flow channel.
  • Example 6 provided by the present invention: including the above examples 4 or 5, wherein the insulating mechanism includes an insulating part and a heat insulating part; the material of the insulating part is a ceramic material or a glass material.
  • Example 7 provided by the present invention: including the above example 6, wherein the insulating portion is an umbrella-shaped string ceramic column, an umbrella-shaped string glass column, a columnar string ceramic column or a columnar glass column, with glaze on the inside and outside of the umbrella or the inside and outside of the column.
  • the insulating portion is an umbrella-shaped string ceramic column, an umbrella-shaped string glass column, a columnar string ceramic column or a columnar glass column, with glaze on the inside and outside of the umbrella or the inside and outside of the column.
  • Example 8 provided by the present invention: including the above example 7, wherein the distance between the outer edge of the umbrella string ceramic column or the umbrella string glass column and the electric field anode is more than 1.4 times the electric field distance, and the umbrella string ceramic column Or the sum of the pitch of the umbrella ledge of the umbrella-shaped glass column is 1.4 times or more of the insulation pitch of the umbrella-shaped ceramic column or umbrella-shaped glass column.
  • the total length of the umbrella edge of the umbrella-shaped ceramic column or umbrella-shaped glass column is the umbrella.
  • the insulation distance of the ceramic column or umbrella-shaped glass column is more than 1.4 times.
  • Example 9 includes any one of the above examples 3 to 8, wherein the length of the first anode portion is 1/10 to 1/4, 1/4 to the length of the electric field anode 1/3, 1/3 to 1/2, 1/2 to 2/3, 2/3 to 3/4, or 3/4 to 9/10.
  • Example 10 provided by the present invention includes any one of the above examples 3 to 9, wherein the length of the first anode part is long enough to remove some dust and reduce accumulation in the insulation mechanism and The dust on the cathode support plate reduces the electric breakdown caused by the dust.
  • Example 11 provided by the present invention: includes any one of the foregoing Examples 3 to 10, wherein the second anode part includes a dust accumulation section and a reserved dust accumulation section.
  • Example 12 provided by the present invention includes any one of the foregoing Examples 2 to 11, wherein the electric field cathode includes at least one electrode rod.
  • Example 13 provided by the present invention: including the above example 12, wherein the diameter of the electrode rod is not greater than 3 mm.
  • Example 14 provided by the present invention: including the above examples 12 or 13, wherein the shape of the electrode rod is needle-like, polygonal, burr-like, threaded rod-like or cylindrical.
  • Example 15 provided by the present invention: including any one of the above examples 2 to 14, wherein the electric field anode is composed of a hollow tube bundle.
  • Example 16 provided by the present invention: including the above example 15, wherein the hollow cross section of the electric field anode tube bundle is circular or polygonal.
  • Example 17 provided by the present invention: including the above example 16, wherein the polygon is a hexagon.
  • Example 18 provided by the present invention includes any one of the above examples 14 to 17, wherein the tube bundle of the electric field anode is in a honeycomb shape.
  • Example 19 provided by the present invention includes any one of the above examples 2 to 18, wherein the electric field cathode penetrates the electric field anode.
  • Example 20 provided by the present invention: includes any one of the foregoing Examples 2 to 19, wherein the electric field device further includes an auxiliary electric field unit for generating an auxiliary electric field that is not parallel to the ionization electric field.
  • Example 21 includes any one of the above examples 2 to 19, wherein the electric field device further includes an auxiliary electric field unit, the ionization electric field includes a flow channel, and the auxiliary electric field unit is used to generate and The auxiliary electric field where the flow channel is not vertical.
  • Example 22 provided by the present invention: includes the above examples 20 or 21, wherein the auxiliary electric field unit includes a first electrode, and the first electrode of the auxiliary electric field unit is arranged at or near the entrance of the ionization electric field.
  • Example 23 provided by the present invention: including the above example 22, wherein the first electrode is a cathode.
  • Example 24 provided by the present invention: including the above example 22 or 23, wherein the first electrode of the auxiliary electric field unit is an extension of the electric field cathode.
  • Example 26 provided by the present invention: includes any one of the above examples 20 to 25, wherein the auxiliary electric field unit includes a second electrode, and the second electrode of the auxiliary electric field unit is arranged at or near the ionizing electric field The exit.
  • Example 27 provided by the present invention: including the above example 26, wherein the second electrode is an anode.
  • Example 28 provided by the present invention: includes the above example 26 or 27, wherein the second electrode of the auxiliary electric field unit is an extension of the electric field anode.
  • Example 30 provided by the present invention: includes any one of the foregoing Examples 20 to 23, 26, and 27, wherein the electrode of the auxiliary electric field and the electrode of the ionization electric field are arranged independently.
  • Example 31 provided by the present invention: includes any one of the foregoing Examples 2 to 30, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.
  • Example 32 provided by the present invention: includes any one of the foregoing Examples 2 to 30, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 6.67:1 to 56.67:1.
  • Example 33 includes any one of the foregoing Examples 2 to 32, wherein the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 Mm; the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.
  • Example 34 includes any one of the foregoing Examples 2 to 32, wherein the distance between the electric field anode and the electric field cathode is less than 150 mm.
  • Example 35 includes any one of the foregoing Examples 2 to 32, wherein the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm.
  • Example 36 provided by the present invention: includes any one of the foregoing Examples 2 to 32, wherein the distance between the electric field anode and the electric field cathode is 5-100 mm.
  • Example 37 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the length of the electric field anode is 10-180 mm.
  • Example 38 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the length of the electric field anode is 60-180 mm.
  • Example 39 provided by the present invention: includes any one of the foregoing Examples 2 to 38, wherein the length of the electric field cathode is 30-180 mm.
  • Example 40 provided by the present invention: includes any one of the foregoing Examples 2 to 38, wherein the electric field cathode length is 54-176 mm.
  • Example 41 provided by the present invention: includes any one of the foregoing Examples 20 to 40, wherein, when operating, the number of coupling times of the ionization electric field is ⁇ 3.
  • Example 42 provided by the present invention: includes any one of the foregoing Examples 2 to 40, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode, the electric field anode and the electric field The distance between the cathodes, the length of the anode of the electric field, and the length of the cathode of the electric field make the coupling times of the ionization electric field ⁇ 3.
  • Example 43 provided by the present invention: includes any one of the foregoing Examples 2 to 42, wherein the value range of the ionization electric field voltage is 1kv-50kv.
  • Example 44 includes any one of the foregoing Examples 2 to 43, wherein the electric field device further includes a plurality of connecting housings, and the series electric field stages are connected through the connecting housings.
  • Example 45 provided by the present invention: includes the above-mentioned example 44, wherein the distance between adjacent electric field levels is more than 1.4 times the pole pitch.
  • Example 46 provided by the present invention: includes any one of the above examples 2 to 45, wherein the electric field device further includes a front electrode, and the front electrode is connected to the electric field anode and the entrance of the electric field device. Between the ionizing electric field formed by the electric field cathode.
  • Example 47 provided by the present invention: includes the above example 46, wherein the front electrode is in the shape of a surface, a mesh, a hole plate, or a plate.
  • Example 48 provided by the present invention: includes the foregoing example 46 or 47, wherein at least one through hole is provided on the front electrode.
  • Example 49 provided by the present invention: includes the above example 48, wherein the through hole is polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus.
  • Example 50 provided by the present invention: includes the foregoing example 48 or 49, wherein the aperture of the through hole is 0.1-3 mm.
  • Example 51 provided by the present invention: includes any one of the foregoing Examples 46 to 50, wherein the front electrode is a combination of one or more forms of solid, liquid, gas molecular group, or plasma .
  • Example 52 includes any one of the foregoing Examples 46 to 51, wherein the front electrode is a conductive mixed state substance, a biological body naturally mixes a conductive substance, or an object is artificially processed to form a conductive substance.
  • Example 53 provided by the present invention: includes any one of the foregoing Examples 46 to 52, wherein the front electrode is 304 steel or graphite.
  • Example 54 provided by the present invention: includes any one of the foregoing Examples 46 to 52, wherein the front electrode is an ion-containing conductive liquid.
  • Example 55 includes any one of the above examples 46 to 54, wherein, during operation, before the gas enters the ionization electric field formed by the electric field cathode and the electric field anode, and the gas passes through the front In the case of electrodes, the front electrode charges particles in the gas.
  • Example 56 provided by the present invention: includes the above example 55, wherein when the gas enters the ionization electric field, the electric field anode exerts an attractive force on the charged particles, causing the charged particles to move to the electric field anode until the The charged particles are attached to the electric field anode.
  • Example 57 provided by the present invention: including the above examples 55 or 56, wherein the front electrode introduces electrons into the particulate matter in the gas, and the electrons are transferred between the front electrode and the electric field anode To charge more particles in the gas.
  • Example 58 provided by the present invention: includes any one of the foregoing Examples 55 to 57, wherein the particles in the gas conduct electrons between the front electrode and the electric field anode and form a current.
  • Example 59 provided by the present invention: includes any one of the foregoing Examples 55 to 58, wherein the front electrode charges the particulate matter in the gas by contacting the particulate matter in the gas.
  • Example 60 provided by the present invention: includes any one of the foregoing Examples 55 to 59, wherein at least one through hole is provided on the front electrode.
  • the example 61 provided by the present invention includes the above example 60, wherein when the gas passes through the through hole on the front electrode, the particles in the gas are charged.
  • Example 62 provided by the present invention: includes any one of the foregoing Examples 46 to 61, wherein the front electrode is perpendicular to the electric field anode.
  • Example 63 provided by the present invention: includes any one of the foregoing Examples 46 to 62, wherein the front electrode is parallel to the electric field anode.
  • Example 64 provided by the present invention: includes any one of the foregoing Examples 46 to 63, wherein the front electrode adopts a metal wire mesh.
  • Example 65 includes any one of the foregoing Examples 46 to 64, wherein the voltage between the front electrode and the electric field anode is different from that between the electric field cathode and the electric field anode The voltage.
  • Example 66 provided by the present invention: includes any one of the foregoing Examples 46 to 65, wherein the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage.
  • Example 67 provided by the present invention: includes any one of the foregoing Examples 46 to 66, wherein the voltage between the front electrode and the electric field anode is 0.1-2 kv/mm.
  • Example 68 provided by the present invention: includes any one of the foregoing Examples 46 to 67, wherein the electric field device includes a flow channel, the front electrode is located in the flow channel; the cross-sectional area of the front electrode The cross-sectional area ratio of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.
  • Example 105 includes any one of Examples 1 to 104, wherein the electric field dust removal system further includes an ozone removal device for removing or reducing the ozone generated by the intake electric field device.
  • the ozone device is between the outlet of the intake electric field device and the outlet of the intake dust removal system.
  • Example 70 provided by the present invention: includes the above example 69, wherein the ozone removing device further includes an ozone digester.
  • Example 71 provided by the present invention: including the above example 70, wherein the ozone digester is selected from at least one of an ultraviolet ozone digester and a catalytic ozone digester.
  • Example 72 provided by the present invention: A semiconductor manufacturing system, including the clean room system for semiconductor manufacturing described in any one of Examples 1-71 above, and further including:
  • the film preparation device is arranged in the clean room.
  • the thin film etching device is arranged in the clean room.
  • the ion doping device is arranged in the clean room.
  • Example 73 provided by the present invention: an electric field dust removal method for a clean room system used in semiconductor manufacturing, including the following steps:
  • the gas passes through the ionizing electric field generated by the electric field anode and the electric field cathode to remove particulate matter in the gas.
  • Example 74 provided by the present invention: including Example 73, wherein the electric field dust removal method further includes a method of providing an auxiliary electric field, including the following steps:
  • An auxiliary electric field is generated in the flow channel, and the auxiliary electric field is not perpendicular to the flow channel.
  • Example 75 provided by the present invention: including Example 74, wherein the auxiliary electric field includes a first electrode, and the first electrode is arranged at or near the entrance of the ionization dust removal electric field.
  • Example 76 provided by the present invention: including Example 75, wherein the first electrode is a cathode.
  • Example 77 provided by the present invention: includes any one of Examples 75 or 76, wherein the first electrode is an extension of the electric field cathode.
  • Example 79 provided by the present invention: includes any one of Examples 73 to 78, wherein the electric field includes a second electrode, and the second electrode is arranged at or near the outlet of the ionization dust removal electric field.
  • Example 80 provided by the present invention: includes Example 79, wherein the second electrode is an anode.
  • Example 81 provided by the present invention: includes example 79 or 80, wherein the second electrode is an extension of the electric field anode.
  • Example 83 provided by the present invention: includes any one of Examples 73 to 76, wherein the second electrode is arranged independently of the electric field anode and the first cathode.
  • Example 84 provided by the present invention: includes examples 73, 79, or 80, wherein the second electrode is arranged independently of the electric field anode and the first cathode.
  • Example 85 provided by the present invention: the electric field dust removal method including any one of Examples 73 to 84, wherein the electric field dust removal method further includes a method for reducing the coupling of dust removal electric field, including the following steps:
  • Example 86 provided by the present invention: including Example 85, which includes selecting the ratio of the dust collection area of the electric field anode to the discharge area of the electric field cathode.
  • Example 87 provided by the present invention: includes Example 86, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 1.667:1 to 1680:1.
  • Example 88 provided by the present invention includes Example 86, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 6.67:1 to 56.67:1.
  • Example 89 provided by the present invention: includes any one of Examples 85 to 88, including selecting the electric field cathode to have a diameter of 1-3 mm, and the distance between the electric field anode and the electric field cathode to be 2.5-139.9 mm
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.
  • Example 90 provided by the present invention: includes any one of Examples 85 to 89, wherein the distance between the electric field anode and the electric field cathode is selected to be less than 150 mm.
  • Example 91 provided by the present invention: includes any one of Examples 85 to 89, wherein the distance between the electric field anode and the electric field cathode is selected to be 2.5-139.9 mm.
  • Example 92 provided by the present invention: includes any one of Examples 85 to 89, wherein the distance between the electric field anode and the electric field cathode is selected to be 5-100 mm.
  • Example 93 provided by the present invention: includes any one of Examples 85 to 92, including selecting the electric field anode length to be 10-180 mm.
  • Example 94 provided by the present invention: includes any one of Examples 85 to 92, including selecting the electric field anode length to be 60-180 mm.
  • Example 95 provided by the present invention: including any one of Examples 85 to 94, including selecting the electric field cathode length to be 30-180 mm.
  • Example 96 provided by the present invention: including any one of Examples 85 to 94, including selecting the electric field cathode length to be 54-176 mm.
  • Example 97 provided by the present invention: includes any one of Examples 85 to 96, wherein it includes selecting that the electric field cathode includes at least one electrode rod.
  • Example 98 provided by the present invention: includes Example 97, which includes selecting the electrode rod to have a diameter not greater than 3 mm.
  • Example 99 provided by the present invention: including Example 97 or 98, which includes selecting the shape of the electrode rod to be needle, polygon, burr, threaded rod, or column.
  • Example 100 provided by the present invention: includes any one of Examples 85 to 99, including selecting that the electric field anode is composed of a hollow tube bundle.
  • Example 101 includes Example 100, wherein the hollow cross section including the selection of the anode tube bundle is circular or polygonal.
  • Example 102 provided by the present invention: includes Example 101, which includes selecting the polygon as a hexagon.
  • Example 103 provided by the present invention: includes any one of Examples 100 to 102, wherein the tube bundle including the selection of the electric field anode is in a honeycomb shape.
  • Example 104 provided by the present invention: includes any one of Examples 85 to 103, wherein it includes selecting the electric field cathode to penetrate into the electric field anode.
  • Example 105 provided by the present invention: includes any one of Examples 85 to 104, wherein the size of the electric field anode or/and the electric field cathode is selected such that the number of electric field couplings ⁇ 3.
  • Example 106 provided by the present invention: includes any one of Examples 85 to 104, wherein the electric field dust removal method further includes the following step: the air is ionized and dusted to remove or reduce the ozone generated by the ionized dust.
  • Example 107 provided by the present invention: including Example 106, wherein ozone generated by ionization and dust removal is subjected to ozone digestion.
  • Example 108 provided by the present invention: includes Example 107, wherein the ozone digestion is selected from at least one of ultraviolet digestion and catalytic digestion.
  • Example 109 provided by the present invention: A semiconductor manufacturing method including the following steps:
  • a channel is formed on the film, and the channel exposes the surface of the substrate;
  • ion infiltration is performed on the substrate exposed by the trench to form a specific structure with electronic characteristics.
  • the electric field dust removal system and method provided by the present invention can effectively remove nanoparticles in the air, especially some embodiments can effectively remove particles below 50nm, especially particles around 23nm, some embodiments remove 23nm particles The efficiency is over 99.99%, which can meet the requirements of the semiconductor manufacturing plant for gas entering the clean room.
  • the existing semiconductor manufacturing plant is a three-story building.
  • the filter purification system of the clean room requires a separate building.
  • the construction cost is about 300 US dollars/m 2. Therefore, the existing purification system takes up a large space and the construction cost is also high.
  • Some embodiments of the invention can reduce the volume and area by more than 10 times, and save the construction cost, making the present invention small in size and low in cost.
  • the resistance of the ultra-high efficiency filter in the prior art is often more than 1500 Pa, and the resistance of each 1000 kW requires the motor to consume 1000 kW, so the energy consumption of the fan is high.
  • the resistance of some embodiments of the present invention is only about 100 Pa. It can save about 15 times and consume less power.
  • Some embodiments of the present invention have a removal effect of more than 99.99% on 23nm particulate matter, meet the air purification requirements of clean rooms in semiconductor manufacturing plants, and can realize air purification in circulating plants.
  • FIG. 1 is a schematic diagram of the structure of an electric field device in Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram of the structure of the electric field generating unit in the embodiment 2-11 of the present invention.
  • Fig. 3 is an A-A view of the electric field generating unit of Fig. 2 in embodiment 2 and embodiment 5 of the present invention.
  • Fig. 4 is an A-A view of the electric field generating unit of Fig. 2 with length and angle marked in embodiment 2 and embodiment 5 of the present invention.
  • FIG. 5 is a schematic diagram of the structure of two electric field devices in embodiment 2 and embodiment 5 of the present invention.
  • Embodiment 12 is a schematic diagram of the structure of an electric field device in Embodiment 12 of the present invention.
  • FIG. 7 is a schematic structural diagram of an electric field device in Embodiment 14 of the present invention.
  • FIG. 8 is a schematic structural diagram of an electric field device in Embodiment 15 of the present invention.
  • FIG. 9 is a schematic structural diagram of an electric field device in Embodiment 16 of the present invention.
  • Fig. 10 is a schematic structural diagram of an electric field dust removal system in embodiment 17 of the present invention.
  • Fig. 11 is a schematic structural diagram of a clean room system in embodiment 18 of the present invention.
  • the electric field dust removal system and method provided by the present invention can effectively remove nanoparticles in the air, especially certain embodiments can effectively remove particles below 50nm, especially particles around 23nm, for 23nm particles
  • the removal efficiency reaches more than 99.99%, which can meet the requirements of the semiconductor manufacturing plant for gas entering the clean room.
  • some embodiments of the present invention can reduce the volume and area by more than 10 times, save construction costs, and make the present invention small in size and low in cost.
  • the resistance of the ultra-high efficiency filter in the prior art is often more than 1500 Pa, and every 1000 kW of resistance requires the motor to consume 1000 kW of electricity, so the energy consumption of the fan is high.
  • the resistance of some embodiments of the present invention is only about 100 Pa, and the power consumption can be saved. About 15 times, low power consumption.
  • the present invention provides a clean room system for semiconductor manufacturing, including a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system inlet and a dust removal system Outlet, electric field device; the gas inlet of the clean room is connected with the outlet of the dust removal system of the electric field dust removal system.
  • the dust removal system of the semiconductor manufacturing industry may include an inlet of the dust removal system, an outlet of the dust removal system, and an electric field device.
  • the electric field device may include an electric field device inlet, an electric field device outlet, and a front electrode located between the electric field device inlet and the electric field device outlet. When the gas flows through the front electrode from the electric field device inlet, the gas The particles in the air will be charged.
  • a semiconductor manufacturing system including: the clean room system for semiconductor manufacturing according to the present invention, the clean room system including a clean room and an electric field dust removal system; and further including:
  • the thin film preparation device is set in a clean room and is used to form a thin film on a substrate. Any applicable related device in the prior art can be selected.
  • the thin film etching device is arranged in a clean room and is used to etch the thin film to form a channel. Any applicable related device in the prior art can be selected.
  • the ion doping device is arranged in a clean room and is used to form a specific structure with electronic characteristics on the substrate exposed by the trench. Any applicable related device in the prior art can be selected.
  • Some embodiments of the present invention also provide a semiconductor manufacturing method, including the following steps:
  • Air dust removal Use electric field dust removal method to remove particles in the gas; the purified gas after electric field dust removal enters the clean room;
  • step S3 the groove formation includes the following steps:
  • the exposed film is etched to expose part of the substrate surface to form a channel.
  • the photoresist is a positive resist or a reverse resist.
  • the material of the substrate is silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide, or any other applicable material.
  • the thin film is formed by CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition) process, or other conventional applicable film formation method.
  • CVD Chemical Vapor Deposition
  • PVD Physical Vapor Deposition
  • the main component of the thin film is silicon nitride, silicon oxide, silicon carbide, polysilicon, or any combination of the above, or any other applicable substance.
  • the method of forming the channel may be any suitable method, for example, coating photoresist on the surface of the film, and placing a mask plate with a mask pattern on the photoresist
  • the mask is irradiated with a light source, the photoresist is exposed through the mask, and part of the photoresist is cleaned and removed, exposing part of the film surface.
  • the light source can be any suitable light source, such as ultraviolet, deep ultraviolet or extreme ultraviolet.
  • the photoresist can be positive or negative.
  • the part of the photoresist irradiated by the light source is easily washed off by the developer, and the part not irradiated by the light source is not easily washed off by the developer and remains on the film.
  • the negative resin is selected, the part of the photoresist irradiated by the light source is not easily washed off by the developer and remains on the film, while the part not irradiated by the light source is easily washed off by the developer.
  • the etching method may be any suitable method, for example, dry etching or wet etching is used.
  • dry etching sputter etching and other methods can be used to etch the film, which has good selectivity.
  • wet etching a chemical etching solution such as hydrogen fluoride solution can be used to etch away the part of the film in contact with the chemical etching solution, which has the characteristics of fast etching rate, deep thickness and high sensitivity.
  • the ion infiltration may be diffusion or ion implantation, or any other applicable method.
  • step S4 the electronic characteristic is a PN junction.
  • step S4 ions are allowed to penetrate into the substrate on the substrate exposed after etching to form a specific structure with electronic characteristics such as a PN junction.
  • the electric field device may include an electric field cathode and an electric field anode, and an ionizing electric field is formed between the electric field cathode and the electric field anode.
  • an ionizing electric field is formed between the electric field cathode and the electric field anode.
  • the electric field cathode includes a plurality of cathode wires.
  • the diameter of the cathode wire can be 0.1mm-20mm, and the size parameter can be adjusted according to the application situation and dust accumulation requirements. In an embodiment of the present invention, the diameter of the cathode wire is not greater than 3 mm.
  • the cathode wire uses a metal wire or an alloy wire that is easy to discharge, is temperature-resistant, can support its own weight, and is electrochemically stable.
  • the material of the cathode wire is titanium. The specific shape of the cathode wire is adjusted according to the shape of the electric field anode.
  • the cathode wire For example, if the dust accumulation surface of the electric field anode is flat, the cross section of the cathode wire is circular; if the dust accumulation surface of the electric field anode is an arc surface, the cathode wire needs to be designed as Polyhedral. The length of the cathode wire is adjusted according to the electric field anode.
  • the electric field cathode includes a plurality of cathode rods.
  • the diameter of the cathode rod is not greater than 3 mm.
  • the cathode rod uses a metal rod or alloy rod that is easy to discharge.
  • the shape of the cathode rod can be needle-like, polygonal, burr-like, threaded rod-like or column-like. The shape of the cathode rod can be adjusted according to the shape of the electric field anode.
  • the cross section of the cathode rod needs to be designed to be circular; if the dust accumulation surface of the electric field anode is an arc surface, the cathode The rod needs to be designed in a multi-faceted shape.
  • the electric field cathode is penetrated in the electric field anode.
  • the electric field anode includes one or more hollow anode tubes arranged in parallel. When there are multiple hollow anode tubes, all the hollow anode tubes constitute a honeycomb electric field anode.
  • the cross section of the hollow anode tube may be circular or polygonal. If the cross section of the hollow anode tube is circular, a uniform electric field can be formed between the electric field anode and the electric field cathode, and the inner wall of the hollow anode tube is not easy to accumulate dust. If the hollow anode tube has a triangular cross section, 3 dust accumulation surfaces and 3 remote dust holding angles can be formed on the inner wall of the hollow anode tube.
  • the hollow anode tube with this structure has the highest dust holding rate. If the cross section of the hollow anode tube is quadrilateral, 4 dust accumulation surfaces and 4 dust holding angles can be obtained, but the assembly structure is unstable. If the cross section of the hollow anode tube is hexagonal, 6 dust accumulation surfaces and 6 dust retention angles can be formed, and the dust accumulation surface and dust retention rate are balanced. If the cross section of the hollow anode tube is more polygonal, more dust accumulation edges can be obtained, but the dust holding rate is lost. In an embodiment of the present invention, the diameter of the tube inscribed circle of the hollow anode tube ranges from 5 mm to 400 mm.
  • the electric field cathode is installed on the cathode support plate, and the cathode support plate and the electric field anode are connected by an insulating mechanism.
  • the insulation mechanism is used to achieve insulation between the cathode support plate and the electric field anode.
  • the electric field anode includes a first anode part and a second anode part, that is, the first anode part is close to the inlet of the electric field device, and the second anode part is close to the outlet of the electric field device.
  • the cathode support plate and the insulation mechanism are between the first anode part and the second anode part, that is, the insulation mechanism is installed in the middle of the ionization electric field or the middle of the electric field cathode, which can support the electric field cathode and play a good role in the electric field cathode. Relative to the fixing effect of the electric field anode, the electric field cathode and the electric field anode maintain a set distance. In the prior art, the support point of the cathode is at the end of the cathode, and it is difficult to maintain the distance between the cathode and the anode.
  • the insulation mechanism is arranged outside the electric field flow channel, that is, outside the electric field flow channel, to prevent or reduce dust in the gas from gathering on the insulation mechanism, causing the insulation mechanism to break down or conduct electricity.
  • the insulation mechanism adopts a high-voltage resistant ceramic insulator to insulate the electric field cathode and the electric field anode.
  • the electric field anode is also called a kind of housing.
  • the first anode part is located before the cathode support plate and the insulating mechanism in the gas flow direction.
  • the first anode part can remove water in the gas and prevent water from entering the insulating mechanism, causing the insulating mechanism to short-circuit and ignite. .
  • the first anode part can remove a considerable part of the dust in the gas. When the gas passes through the insulating mechanism, a considerable part of the dust has been eliminated, reducing the possibility of short-circuiting of the insulating mechanism caused by the dust.
  • the insulating mechanism includes insulating ceramic pillars.
  • the design of the first anode part is mainly to protect the insulating ceramic pillars from being polluted by the particles in the gas. Once the insulating ceramic pillars are polluted by the gas, the electric field anode and the electric field cathode will be connected, which will invalidate the dust accumulation function of the electric field anode.
  • the design of an anode part can effectively reduce the pollution of the insulating ceramic pillar and increase the use time of the product.
  • the cleaning and maintenance cycle corresponds to the insulating support of the electrode after use.
  • the length of the first anode part is long enough to remove some dust, reduce dust accumulated on the insulation mechanism and the cathode support plate, and reduce electric breakdown caused by the dust.
  • the length of the first anode portion occupies 1/10 to 1/4, 1/4 to 1/3, 1/3 to 1/2, 1/2 to 2/3 of the total length of the electric field anode. 2/3 to 3/4, or 3/4 to 9/10.
  • the second anode part is located behind the cathode support plate and the insulating mechanism in the gas flow direction.
  • the second anode part includes a dust accumulation section and a reserved dust accumulation section.
  • the dust accumulation section uses static electricity to adsorb particulate matter in the gas.
  • the dust accumulation section is to increase the dust accumulation area and prolong the use time of the electric field device.
  • the reserved dust section can provide failure protection for the dust section.
  • the dust accumulation section is reserved to further increase the dust accumulation area and improve the dust removal effect under the premise of meeting the design dust removal requirements.
  • the dust accumulation section is reserved to supplement the dust accumulation in the front section.
  • the first anode part and the second anode part may use different power sources.
  • the insulating mechanism is arranged outside the electric field flow channel between the electric field cathode and the electric field anode. Therefore, the insulation mechanism is suspended outside the electric field anode.
  • the insulating mechanism may be made of non-conductor temperature-resistant materials, such as ceramics, glass, and the like.
  • the material insulation that is completely airtight and air-free requires an insulation isolation thickness of> 0.3 mm/kv; and air insulation requires> 1.4 mm/kv.
  • the insulation distance can be set at more than 1.4 times the distance between the electric field cathode and the electric field anode.
  • the insulating mechanism uses ceramics, and the surface is glazed; adhesives or organic materials cannot be used to fill the connection, and the temperature resistance is greater than 350 degrees Celsius.
  • the insulation mechanism includes an insulation part and a heat insulation part.
  • the material of the insulating part is ceramic material or glass material.
  • the insulating part may be an umbrella-shaped string of ceramic pillars or glass pillars with glaze on the inside and outside of the umbrella.
  • the distance between the outer edge of the umbrella string ceramic column or the glass column and the electric field anode is greater than or equal to 1.4 times the electric field distance, that is, greater than or equal to 1.4 times the electrode pitch.
  • the sum of the pitches of umbrella protrusions of the umbrella string ceramic columns or glass columns is greater than or equal to 1.4 times the insulation pitch of the umbrella string ceramic columns.
  • the total inner depth of the umbrella side of the umbrella string ceramic column or the glass column is greater than or equal to 1.4 times the insulation distance of the umbrella string ceramic column.
  • the insulating part can also be a columnar string of ceramic columns or glass columns with glaze on the inside and outside of the columns. In an embodiment of the present invention, the insulating portion may also be tower-shaped.
  • a heating rod is arranged in the insulating part, and when the temperature around the insulating part approaches the dew point, the heating rod is activated and heated. Due to the temperature difference between the inside and outside of the insulating part during use, condensation is likely to occur on the inside and outside of the insulating part.
  • the outer surface of the insulating part may spontaneously or be heated by gas to generate high temperature, and necessary isolation protection is required to prevent burns.
  • the heat insulation part includes a protective enclosure and a denitration purification reaction chamber located outside the insulation part.
  • the end of the insulating part that needs condensation location also needs to be insulated to prevent the environment and the heat dissipation high temperature heating condensation component.
  • the lead wires of the power supply of the electric field device are connected through the wall using umbrella-shaped string ceramic pillars or glass pillars, using elastic contacts to connect the cathode support plate in the wall, and plugging and unplugging the sealed insulating protective wiring cap outside the wall.
  • the insulation distance between the lead wire and the wall conductor and the wall is greater than the ceramic insulation distance of the umbrella string ceramic column or glass column.
  • the high voltage part removes the lead wire and is directly installed on the end to ensure safety.
  • the overall external insulation of the high voltage module is protected by ip68, and the medium is used for heat exchange and heat dissipation.
  • the electric field anode and the electric field cathode are respectively electrically connected to the two electrodes of the power supply.
  • the voltage applied to the electric field anode and the electric field cathode needs to select an appropriate voltage level.
  • the specific voltage level selected depends on the volume, temperature resistance, and dust holding rate of the electric field device.
  • the voltage is from 1kv to 50kv; first consider the temperature resistance conditions in the design, the parameters of the pole distance and temperature: 1MM ⁇ 30 degrees, the dust area is greater than 0.1 square / thousand cubic meters / hour, the electric field length is greater than 5 of the inscribed circle of a single tube
  • the air flow velocity of the control electric field is less than 9 m/s.
  • the electric field anode is composed of a first hollow anode tube and has a honeycomb shape.
  • the shape of the first hollow anode tube port may be circular or polygonal.
  • the inscribed circle of the first hollow anode tube ranges from 5-400mm, and the corresponding voltage is between 0.1-120kv, and the corresponding current of the first hollow anode tube is between 0.1-30A;
  • the tangent circle corresponds to different corona voltages, about 1KV/1MM.
  • the electric field device includes an electric field stage, the electric field stage includes a plurality of electric field generating units, and there may be one or more electric field generating units.
  • the electric field generating unit is also called a dust collecting unit.
  • the dust collecting unit includes the above-mentioned electric field anode and electric field cathode, and there are one or more dust collecting units.
  • the dust collection efficiency of the electric field device can be effectively improved.
  • each electric field anode has the same polarity
  • each electric field cathode has the same polarity.
  • the electric field levels are connected in series.
  • the electric field device further includes a plurality of connecting shells, and the series electric field stages are connected by the connecting shells; the distance between the electric field stages of two adjacent stages is more than 1.4 times the pole pitch.
  • the inventor of the present invention has discovered through research that the disadvantages of poor removal efficiency and high energy consumption of existing electric field devices are caused by electric field coupling.
  • the invention can significantly reduce the size (namely volume) of the electric field dust removal device by reducing the number of electric field couplings.
  • the size of the ionization dust removal device provided by the present invention is about one-fifth of the size of the existing ionization dust removal device.
  • the gas flow rate in the existing ionization dust removal device is set to about 1m/s, and the present invention can still obtain a higher gas flow rate when the gas flow rate is increased to 6m/s. Particle removal rate.
  • the size of the electric field dust removal device can be reduced.
  • the present invention can significantly improve the particle removal efficiency. For example, when the gas flow rate is about 1m/s, the prior art electric field dust removal device can remove about 70% of the particulate matter in the engine exhaust, but the present invention can remove about 99% of the particulate matter, even when the gas flow rate is 6m/s .
  • an asymmetric structure is adopted between the electric field cathode and the electric field anode.
  • polar particles are subjected to a force of the same magnitude but opposite in direction, and the polar particles reciprocate in the electric field; in an asymmetric electric field, the polar particles are subjected to two different forces, and the polar particles act towards Move in the direction of great force to avoid coupling.
  • a clean room system for semiconductor manufacturing including a clean room and an electric field dust removal system;
  • the clean room includes a gas inlet;
  • the electric field dust removal system includes a dust removal system outlet and an electric field device;
  • the gas inlet of the clean room is connected with the dust removal system outlet of the electric field dust removal system;
  • the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionizing electric field;
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 6.67:1 to 56.67:1.
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is such that the coupling times of the ionization dust removal electric field are ⁇ 3.
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode, the distance between the electric field anode and the electric field cathode, the length of the electric field anode, and the The length of the electric field cathode makes the coupling times of the ionization dust removal electric field ⁇ 3.
  • the electric field device of the present invention forms an ionizing electric field between the electric field cathode and the electric field anode.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode so that the number of electric field couplings is ⁇ 3.
  • the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode may be: 1.667:1 to 1680:1; 3.334:1 to 13.34:1; 6.67:1-56.67:1; 13.34: 1-28.33:1.
  • This embodiment selects the dust collecting area of the electric field anode with a relatively large area and the discharge area of the relatively small electric field cathode.
  • the specific selection of the above area ratio can reduce the discharge area of the electric field cathode, reduce the suction force, and expand the dust collecting area of the electric field anode.
  • Expand the suction that is, the asymmetric electrode suction between the electric field cathode and the electric field anode will cause the charged dust to fall on the dust collecting surface of the electric field anode.
  • the polarity is changed, it can no longer be sucked away by the electric field cathode, and the electric field coupling is reduced. Achieve electric field coupling times ⁇ 3.
  • the dust collection area refers to the area of the working surface of the electric field anode.
  • the dust collection area is the inner surface area of the hollow regular hexagon tube, and the dust collection area is also called the dust accumulation area.
  • the discharge area refers to the area of the working surface of the electric field cathode. For example, if the electric field cathode is rod-shaped, the discharge area is the rod-shaped outer surface area.
  • a clean room system for semiconductor manufacturing including a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; The gas inlet of the clean room is in communication with the outlet of the dust removal system of the electric field dust removal system; the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate ionization.
  • Electric field; the length of the electric field anode is 10-180mm.
  • the length of the electric field anode is 60-180 mm.
  • the length of the anode of the electric field is such that the coupling times of the ionization dust removal electric field are ⁇ 3.
  • a clean room system for semiconductor manufacturing including a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; The gas inlet of the clean room is in communication with the outlet of the dust removal system of the electric field dust removal system; the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate ionization.
  • Electric field; the electric field cathode length is 30-180mm.
  • the length of the electric field cathode is 54-176 mm.
  • the length of the anode of the electric field is such that the coupling times of the ionization dust removal electric field are ⁇ 3.
  • a clean room system for semiconductor manufacturing including a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; The gas inlet of the clean room is in communication with the outlet of the dust removal system of the electric field dust removal system; the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate ionization. Electric field; the distance between the electric field anode and the electric field cathode is less than 150mm.
  • the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm.
  • the distance between the electric field anode and the electric field cathode is 5-100 mm.
  • the distance between the electric field anode and the electric field cathode is such that the coupling times of the ionization dust removal electric field are ⁇ 3.
  • the length of the electric field anode may be 10-180mm, 10-20mm, 20-30mm, 60-180mm, 30-40mm, 40-50mm, 50-60mm, 60-70mm, 70-80mm, 80mm. -90mm, 90-100mm, 100-110mm, 110-120mm, 120-130mm, 130-140mm, 140-150mm, 150-160mm, 160-170mm, 170-180mm, 60mm, 180mm, 10mm or 30mm.
  • the length of the electric field anode refers to the minimum length from one end to the other end of the working surface of the electric field anode. Choosing this length of the electric field anode can effectively reduce the electric field coupling.
  • the length of the electric field cathode may be 30-180mm, 54-176mm, 30-40mm, 40-50mm, 50-54mm, 54-60mm, 60-70mm, 70-80mm, 80-90mm, 90mm. -100mm, 100-110mm, 110-120mm, 120-130mm, 130-140mm, 140-150mm, 150-160mm, 160-170mm, 170-176mm, 170-180mm, 54mm, 180mm, or 30mm.
  • the length of the electric field cathode refers to the minimum length from one end to the other end of the working surface of the electric field cathode. Choosing this length of the electric field cathode can effectively reduce the electric field coupling.
  • the distance between the electric field anode and the electric field cathode may be 5-30mm, 2.5-139.9mm, 9.9-139.9mm, 2.5-9.9mm, 9.9-20mm, 20-30mm, 30-40mm, 40mm. -50mm, 50-60mm, 60-70mm, 70-80mm, 80-90mm, 90-100mm, 100-110mm, 110-120mm, 120-130mm, 130-139.9mm, 9.9mm, 139.9mm, or 2.5mm.
  • the distance between the anode of the electric field and the cathode of the electric field is also referred to as the electrode pitch.
  • the pole distance specifically refers to the minimum vertical distance between the working surfaces of the electric field anode and the electric field cathode. The selection of this pole spacing can effectively reduce the electric field coupling and make the electric field device have high temperature resistance characteristics.
  • the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm; the dust accumulation area of the electric field anode and the electric field cathode The ratio of the discharge area is 1.667:1 to 1680:1.
  • the present invention provides an electric field dust removal method for a clean room system used in semiconductor manufacturing, which may further include a method for reducing electric field coupling in air dust removal, including the following steps:
  • the electric field anode or/and the electric field cathode are selected.
  • the size of the electric field anode or/and the electric field cathode is selected such that the number of electric field couplings is ⁇ 3.
  • the ratio of the dust collection area of the electric field anode to the discharge area of the electric field cathode is selected.
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 1.667:1 to 1680:1.
  • the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 6.67-56.67:1.
  • the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm; the dust accumulation area of the electric field anode and the electric field cathode The ratio of the discharge area is 1.667:1 to 1680:1.
  • the distance between the electric field anode and the electric field cathode is selected to be less than 150 mm.
  • the distance between the electric field anode and the electric field cathode is selected to be 2.5-139.9 mm. More preferably, the distance between the electric field anode and the electric field cathode is selected to be 5.0-100 mm.
  • the length of the electric field anode is selected to be 10-180 mm. More preferably, the length of the electric field anode is selected to be 60-180 mm.
  • the length of the electric field cathode is selected to be 30-180 mm. More preferably, the length of the electric field cathode is selected to be 54-176 mm.
  • the electric field device further includes an auxiliary electric field unit for generating an auxiliary electric field that is not parallel to the ionization dust removal electric field.
  • the electric field device further includes an auxiliary electric field unit, the ionization dust removal electric field includes a flow channel, and the auxiliary electric field unit is used to generate an auxiliary electric field that is not perpendicular to the flow channel.
  • the auxiliary electric field unit includes a first electrode, and the first electrode of the auxiliary electric field unit is disposed at or near the entrance of the ionization dust removal electric field.
  • the first electrode is a cathode.
  • the first electrode of the auxiliary electric field unit is an extension of the electric field cathode.
  • the auxiliary electric field unit includes a second electrode, and the second electrode of the auxiliary electric field unit is arranged at or near the outlet of the ionization dust removal electric field.
  • the second electrode is an anode.
  • the second electrode of the auxiliary electric field unit is an extension of the electric field anode.
  • the electrode of the auxiliary electric field and the electrode of the ionization dust removal electric field are arranged independently.
  • the ionizing electric field between the electric field anode and the electric field cathode is also called the first electric field.
  • a second electric field that is not parallel to the first electric field is formed between the electric field anode and the electric field cathode.
  • the flow channel of the second electric field and the ionization electric field are not perpendicular.
  • the second electric field is also called an auxiliary electric field, and can be formed by one or two auxiliary electrodes.
  • the auxiliary electrode can be placed at the entrance or exit of the ionizing electric field, and the auxiliary electrode can have a negative potential, Or positive potential.
  • the auxiliary electrode When the second electric field is formed by two auxiliary electrodes, one of the auxiliary electrodes can have a negative potential, and the other auxiliary electrode can have a positive potential; one auxiliary electrode can be placed at the entrance of the ionization electric field, and the other auxiliary electrode can be placed at the entrance of the ionization electric field.
  • the auxiliary electrode may be a part of the electric field cathode or the electric field anode, that is, the auxiliary electrode may be an extension of the electric field cathode or the electric field anode, and the length of the electric field cathode and the electric field anode are different.
  • the auxiliary electrode may also be a separate electrode, that is, the auxiliary electrode may not be a part of the electric field cathode or the electric field anode.
  • the voltage of the second electric field is different from the voltage of the first electric field and can be controlled separately according to the working conditions.
  • the auxiliary electrode includes the first electrode and/or the second electrode in the auxiliary electric field unit.
  • the present invention provides an electric field dust removal method for a clean room system used in semiconductor manufacturing, which includes the following steps:
  • the electric field dust removal method of the present invention further includes: a method of providing an auxiliary electric field, including the following steps:
  • An auxiliary electric field is generated in the flow channel, the auxiliary electric field is not perpendicular to the flow channel, and the auxiliary electric field includes an inlet and an outlet.
  • the auxiliary electric field ionizes the air in the flow channel.
  • the auxiliary electric field is generated by the auxiliary electric field unit.
  • the electric field device includes a front electrode between the entrance of the electric field device and the ionizing electric field formed by the electric field anode and the electric field cathode.
  • the gas flows through the front electrode from the entrance of the electric field device, the particles in the gas will be charged.
  • the shape of the front electrode may be a surface, a mesh, a perforated plate, a plate, a needle bar, a ball cage, a box, a tube, a natural material form, or a material processed form.
  • the mesh shape is a shape including any porous structure.
  • the front electrode can be a non-porous structure or a porous structure.
  • the front electrode has a hole structure, one or more air inlet through holes are provided on the front electrode.
  • the shape of the air intake through hole may be polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus.
  • the outline size of the air inlet through hole may be 0.1-3mm, 0.1-0.2mm, 0.2-0.5mm, 0.5-1mm, 1-1.2mm, 1.2-1.5mm, 1.5-2mm, 2- 2.5mm, 2.5-2.8mm, or 2.8-3mm.
  • the gas with particles passes through the through holes on the front electrode, the gas with particles passes through the front electrode, which increases the contact area between the gas with particles and the front electrode and increases the charging efficiency.
  • the through hole on the front electrode is any hole that allows substances to flow through the front electrode.
  • the shape of the front electrode can be one or more of solid, liquid, gas molecular clusters, plasma, conductive mixed state substances, biological substances naturally mixed with conductive substances, or artificial processing of objects to form conductive substances.
  • the front electrode is solid, solid metal, such as 304 steel, or other solid conductors, such as graphite, can be used.
  • the front electrode is a liquid, it may be an ion-containing conductive liquid.
  • the front electrode charges the particles in the gas.
  • the electric field anode exerts an attractive force on the charged particles, causing the charged particles to move toward the electric field anode until the charged particles adhere to the electric field anode.
  • the front electrode introduces electrons into the particles in the gas, and the electrons are transferred between the front electrode and the electric field anode, so that more particles in the gas are charged.
  • the charged particles conduct electrons between the front electrode and the electric field anode and form a current.
  • the front electrode charges the particles in the gas by contacting the particles in the gas. In an embodiment of the present invention, the front electrode transfers electrons to the particulate matter in the gas by contacting the particulate matter in the gas, and charges the particulate matter in the gas.
  • the front electrode is perpendicular to the electric field anode. In one embodiment of the present invention, the front electrode is parallel to the electric field anode. In an embodiment of the present invention, the front electrode adopts a metal wire mesh. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode is different from the voltage between the electric field cathode and the electric field anode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage. The initial corona voltage is the minimum value of the voltage between the electric field cathode and the electric field anode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode may be 0.1-2 kv/mm.
  • the electric field device includes a flow channel, and the front electrode is located in the flow channel.
  • the ratio of the cross-sectional area of the front electrode to the cross-sectional area of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40% , Or 50%.
  • the cross-sectional area of the front electrode refers to the sum of the area of the solid part of the front electrode along the cross-section.
  • the front electrode has a negative potential.
  • the air intake dust removal system further includes an ozone removal device for removing or reducing ozone generated by the air intake electric field device, and the ozone removal device is located at the outlet of the air intake electric field device and the air intake dust removal device. Between system exits.
  • the ozone removing device includes an ozone digester.
  • the ozone digester is selected from at least one of an ultraviolet ozone digester and a catalytic ozone digester.
  • the electric field dust removal system further includes an ozone removing device for removing or reducing ozone generated by the electric field device. Because oxygen in the air participates in ionization, ozone is formed, which affects the performance of subsequent devices, such as ozone After entering the engine, the internal chemical composition of oxygen elements increases, the molecular weight increases, and the hydrocarbon compounds are transformed into non-hydrocarbon compounds. The appearance becomes darker, the precipitation increases, and the corrosiveness increases, which reduces the performance of the lubricant. Therefore, The electric field dust removal system also includes an ozone removal device to avoid or reduce the performance degradation of subsequent devices, such as avoiding or reducing the performance degradation of lubricating oil in the engine.
  • the ozone digester is used to digest ozone in the tail gas after being treated by the reaction field.
  • the ozone digester can digest ozone by ultraviolet, catalysis and other methods.
  • FIG. 1 shows a schematic diagram of the structure of the electric field device in this embodiment.
  • the electric field device includes an electric field device inlet 1011, a front electrode 1013, an insulating mechanism 1015, and an ozone mechanism 1018.
  • the front electrode 1013 is arranged at the entrance 1011 of the electric field device, the front electrode 1013 is a conductive mesh plate, and the conductive mesh plate is used to conduct electrons into the gas after being powered on.
  • the electric field device includes an electric field anode 10141 and an electric field cathode 10142 arranged in the electric field anode 10141.
  • An asymmetric electrostatic field is formed between the electric field anode 10141 and the electric field cathode 10142, wherein the gas to be contained in particulate matter enters the exhaust port through the exhaust port.
  • the gas is ionized, so that the particles obtain a negative charge, move to the electric field anode 10141, and deposit on the electric field anode 10141.
  • the inside of the electric field anode 10141 is composed of a honeycomb-shaped and hollow anode tube bundle group, and the shape of the port of the anode tube bundle is a hexagon.
  • the electric field cathode 10142 includes a plurality of electrode rods, which pierce each anode tube bundle in the anode tube bundle one by one, wherein the shape of the electrode rod is needle-like, polygonal, burr-like, and threaded rod. Shaped or columnar.
  • the ratio of the dust collection area of the electric field anode 10141 to the discharge area of the electric field cathode 10142 is 1680:1, the distance between the electric field anode 10141 and the electric field cathode 10142 is 9.9 mm, the length of the electric field anode 10141 is 60 mm, and the length of the electric field cathode 10142 It is 54mm.
  • the outlet end of the electric field cathode 10142 is lower than the outlet end of the electric field anode 10141, and the inlet end of the electric field cathode 10142 is flush with the inlet end of the electric field anode 10141.
  • the insulation mechanism 1015 includes an insulation part and a heat insulation part.
  • the insulating part is made of ceramic material or glass material.
  • the insulating part is an umbrella-shaped string of ceramic pillars or glass pillars, or a pillar-shaped string of ceramic pillars or glass pillars, and the inside and outside of the umbrella or the pillars are covered with glaze.
  • the electric field cathode 10142 is mounted on the cathode support plate 10143, and the cathode support plate 10143 and the electric field anode 10141 are connected through an insulating mechanism 1015.
  • the insulation mechanism 1015 is used to achieve insulation between the cathode support plate 10143 and the electric field anode 10141.
  • the electric field anode 10141 includes a first anode portion 101412 and a second anode portion 101411, that is, the first anode portion 101412 is close to the entrance of the electric field device, and the second anode portion 101411 is close to the outlet of the electric field device.
  • the cathode support plate and the insulation mechanism are between the first anode part 101412 and the second anode part 101411, that is, the insulation mechanism 1015 is installed in the middle of the ionization electric field or the middle of the electric field cathode 10142, which can support the electric field cathode 10142 well, and
  • the electric field cathode 10142 is fixed relative to the electric field anode 10141, so that the electric field cathode 10142 and the electric field anode 10141 maintain a set distance.
  • the ozone mechanism 1018 arranged at the air outlet end of the dust removal electric field system uses ozone removal lamps.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • Fig. 2 For the structure diagram of the electric field generating unit of this embodiment, refer to Fig. 2, and the AA view of the electric field generating unit of this embodiment is shown in Fig. 3.
  • FIG. 4 for the AA view of the electric field generating unit with the length and angle of the electric field generating unit in this embodiment.
  • FIG. 2 it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power supply, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 6.67:1, the distance L3 between the electric field anode 4051 and the electric field cathode 4052 is 9.9 mm, and the electric field anode 4051
  • the length L1 is 60mm
  • the length L2 of the electric field cathode 4052 is 54mm
  • the electric field anode 4051 includes a fluid channel
  • the fluid channel includes an inlet end and an outlet end
  • the electric field cathode 4052 is placed in the fluid channel
  • the electric field cathode 4052 extends along the direction of the fluid channel of the dust collecting electrode
  • the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052
  • the outlet end of the electric field anode 4051 and the near outlet end of the electric field cathode 4052 have an angle
  • the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units.
  • each electric field anode has the same polarity
  • each electric field cathode has the same polarity.
  • the electric field stages of the plurality of electric field stages are connected in series, and the series electric field stages are connected by a connecting shell.
  • the distance between the electric field stages of two adjacent stages is greater than 1.4 times of the pole spacing.
  • the electric field levels are two levels, namely the first electric field 4053 and the second electric field 4054.
  • the first electric field 4053 and the second electric field 4054 The secondary electric field 4054 is connected in series through the connecting housing 4055.
  • the above-mentioned substances to be treated may be particulate matter in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1680:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 139.9 mm, and the electric field anode 4051 length
  • the electric field cathode 4052 has a length of 180 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected, and the number of electric field couplings ⁇ 3, which can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles in the air by the electric field, and save electric field power 20- 40%.
  • the above-mentioned substances to be treated may be particulate matter in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.667:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.4 mm, and the electric field anode 4051 length
  • the electric field cathode 4052 has a length of 30 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected, and the number of electric field couplings is less than 3, which can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles by the electric field, and save the electric energy of the electric field by 10-30% .
  • the above-mentioned substance to be treated may be particulate matter in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 in this embodiment is a hollow regular hexagonal tube, the electric field cathode 4052 is rod-shaped, and the electric field cathode 4052 penetrates the electric field anode 4051.
  • the dust collection of the electric field anode 4051 The ratio of the area to the discharge area of the electric field cathode 4052 is 6.67:1, the distance L3 between the electric field anode 4051 and the electric field cathode 4052 is 9.9 mm, the electric field anode 4051 length L1 is 60 mm, and the electric field cathode 4052 length L2 is 54 mm.
  • the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 extends in the direction of the fluid channel of the dust collector.
  • the typical tail gas particle pm0.23 dust collection efficiency is above 99.99%, and the typical 23nm particle removal efficiency is above 99.99%.
  • the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units.
  • each electric field anode has the same polarity
  • each electric field cathode has the same polarity.
  • the electric field stages of the plurality of electric field stages are connected in series, and the series electric field stages are connected by a connecting shell.
  • the distance between the electric field stages of two adjacent stages is greater than 1.4 times of the pole spacing.
  • the electric field has two levels, namely, the first electric field 4053 and the second electric field 4054.
  • the first electric field 4053 and the second electric field 4054 are connected in series through the connecting housing 4055.
  • the above-mentioned substances to be treated may be particulate matter in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 is 1680. :1.
  • the distance between the electric field anode 4051 and the electric field cathode 4052 is 139.9 mm
  • the electric field anode 4051 has a length of 180 mm
  • the electric field cathode 4052 has a length of 180 mm.
  • the electric field anode 4051 includes a fluid channel, and the fluid channel includes an inlet end and At the outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 extends along the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the electric field anode 4052
  • the outlet end of the 4051 is flush with the near outlet end of the electric field cathode 4052, and under the action of the electric field anode 4051 and the electric field cathode 4052, more materials to be processed can be collected, which ensures higher dust collection efficiency of the electric field device.
  • the dust collection efficiency of typical tail gas particles pm0.23 is over 99.99%, and the removal efficiency of typical 23nm particles is over 99.99%.
  • the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units.
  • each electric field anode has the same polarity
  • each electric field cathode has the same polarity.
  • the above-mentioned substances to be treated may be particulate matter in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 is 1.667 :1.
  • the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.4 mm.
  • the electric field anode 4051 has a length of 30 mm and the electric field cathode 4052 has a length of 30 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the cathode 4052 extends in the direction of the fluid channel of the dust collector.
  • the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052.
  • the dust collection efficiency of typical tail gas particles pm0.23 is above 99.99%, and the typical removal efficiency of 23nm particles is It is 99.99% or more.
  • the electric field anode 4051 and the electric field cathode 4052 constitute a dust collection unit, and there are multiple dust collection units, so that the use of multiple dust collection units effectively improves the dust collection efficiency of the electric field device.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 27.566:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.3 mm, and the electric field anode 4051 length
  • the electric field cathode 4052 has a length of 4 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected to realize the number of electric field couplings ⁇ 3, which ensures that the dust removal efficiency of the electric field generating unit is higher.
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.108:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.3 mm, and the electric field anode: 051 has a length of 60mm, the electric field cathode 4052 has a length of 200mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 Extending in the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052. Under the action of the electric field catho
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 3065:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 249 mm, and the electric field anode 4051 length is 2000mm, the electric field cathode 4052 has a length of 180mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 collects dust along the The direction of the polar fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field
  • the above-mentioned material to be processed may be particulate dust in the air.
  • the electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field.
  • the electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source.
  • the power source is a DC power source.
  • the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively.
  • the electric field anode 4051 has a positive electric potential
  • the electric field cathode 4052 has a negative electric potential.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.
  • the electric field anode 4051 has a hollow regular hexagonal tube shape
  • the electric field cathode 4052 has a rod shape
  • the electric field cathode 4052 penetrates the electric field anode 4051.
  • the method of reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.338:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 5 mm, and the electric field anode 4051 length is
  • the electric field cathode 4052 has a length of 10 mm.
  • the electric field anode 4051 includes a fluid channel.
  • the fluid channel includes an inlet end and an outlet end.
  • the electric field cathode 4052 is placed in the fluid channel.
  • the direction of the polar fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode 4052 Under the action of, more materials to be processed can be collected, and the number of electric field couplings is less than or equal to 3, which ensures that the dust removal efficiency of the electric field generating unit is higher.
  • the above-mentioned substances to be treated may be particulate matter in the air.
  • the electric field device in this embodiment can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • FIG. 6 for a schematic diagram of the electric field device.
  • the electric field device includes an electric field cathode 5081 and an electric field anode 5082 which are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the anode of the DC power supply.
  • the electric field cathode 5081 has a negative potential
  • the electric field anode 5082 and the auxiliary electrode 5083 both have a positive potential.
  • the auxiliary electrode 5083 and the electric field anode 5082 are fixedly connected in this embodiment. After the electric field anode 5082 is electrically connected to the anode of the DC power supply, the auxiliary electrode 5083 is also electrically connected to the anode of the DC power supply, and the auxiliary electrode 5083 and the electric field anode 5082 have the same positive potential.
  • the auxiliary electrode 5083 in this embodiment can extend in the front-to-back direction, that is, the length direction of the auxiliary electrode 5083 can be the same as the length direction of the electric field anode 5082.
  • the electric field anode 5082 is tubular, the electric field cathode 5081 is rod-shaped, and the electric field cathode 5081 penetrates the electric field anode 5082.
  • the auxiliary electrode 5083 in this embodiment is also tubular, and the auxiliary electrode 5083 and the electric field anode 5082 constitute an anode tube 5084.
  • the front end of the anode tube 5084 is flush with the electric field cathode 5081, and the rear end of the anode tube 5084 exceeds the rear end of the electric field cathode 5081 backward.
  • the part of the anode tube 5084 that extends backward is the auxiliary electrode 5083.
  • the electric field anode 5082 and the electric field cathode 5081 have the same length, and the electric field anode 5082 and the electric field cathode 5081 are opposite in the front and rear direction; the auxiliary electrode 5083 is located behind the electric field anode 5082 and the electric field cathode 5081. In this way, an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field cathode 5081, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081.
  • the negatively charged oxygen ions will combine with the substance to be treated in the process of moving to the electric field anode 5082 and backward, because the oxygen ions have a backward moving speed
  • the oxygen ions are combined with the substance to be treated, there will be no strong collision between the two, thereby avoiding large energy consumption due to the strong collision, making the oxygen ions easy to combine with the substance to be treated, and making
  • the charging efficiency of the substances to be treated in the gas is higher, and furthermore, under the action of the electric field anode 5082 and the anode tube 5084, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.
  • the electric field anode 5082, the auxiliary electrode 5083, and the electric field cathode 5081 constitute a dust removal unit, and there are multiple dust removal units to effectively improve the dust removal efficiency of the electric field device by using multiple dust removal units.
  • the above-mentioned substance to be processed may be granular dust.
  • the DC power supply in this embodiment may specifically be a DC high-voltage power supply.
  • a discharge electric field is formed between the electric field cathode 5081 and the electric field anode 5082, and the discharge electric field is an electrostatic field.
  • the auxiliary electrode 5083 Without the auxiliary electrode 5083, the ions flow in the electric field between the electric field cathode 5081 and the electric field anode 5082 along the direction perpendicular to the electrodes, and flow back and forth between the two electrodes, causing the ions to be folded back and forth between the electrodes for consumption.
  • the auxiliary electrode 5083 is used to stagger the relative positions of the electrodes to form a relative imbalance between the electric field anode 5082 and the electric field cathode 5081.
  • an auxiliary electrode 5083 is used to form an electric field capable of directional ion flow.
  • the collection rate of the electric field device for particles entering the electric field in the direction of ion flow is nearly double that of particles entering the electric field in the direction of counter ion flow, thereby improving the efficiency of electric field dust accumulation and reducing electric field power consumption.
  • the main reason for the low dust removal efficiency of the dust collecting electric field in the prior art is that the direction of the dust entering the electric field is opposite or perpendicular to the direction of the ion flow in the electric field, which causes the dust and the ion flow to collide violently with each other and produce large energy consumption. It also affects the charging efficiency, thereby reducing the electric field dust collection efficiency in the prior art and increasing the energy consumption.
  • the electric field device in this embodiment When the electric field device in this embodiment is used to collect dust in the gas, the gas and dust enter the electric field along the direction of the ion flow, the dust is fully charged, and the electric field consumption is small; the dust collection efficiency of the unipolar electric field can reach more than 99.99%. When the gas and dust enter the electric field against the direction of ion flow, the dust is not fully charged, the electric power consumption of the electric field will increase, and the dust collection efficiency will be 40%-75%.
  • the ion flow formed by the electric field device in this embodiment is beneficial to the unpowered fan fluid transportation, oxygenation, heat exchange, etc.
  • the electric field device in this embodiment can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • the electric field cathode and the electric field anode are respectively electrically connected to the cathode and anode of the DC power supply, and the auxiliary electrode is electrically connected to the cathode of the DC power supply.
  • the auxiliary electrode and the electric field cathode both have a negative electric potential, and the electric field anode has a positive electric potential.
  • the auxiliary electrode can be fixedly connected to the electric field cathode. In this way, after the electric field cathode is electrically connected to the cathode of the DC power source, the auxiliary electrode is also electrically connected to the cathode of the DC power source. At the same time, the auxiliary electrode in this embodiment extends in the front-rear direction.
  • the electric field anode is tubular
  • the electric field cathode is rod-shaped
  • the electric field cathode penetrates the electric field anode.
  • the above-mentioned auxiliary electrode in this embodiment is also rod-shaped, and the auxiliary electrode and the electric field cathode constitute a cathode rod.
  • the front end of the cathode rod extends forward from the front end of the electric field anode, and the part of the cathode rod that exceeds the electric field anode forward is the auxiliary electrode.
  • the electric field anode and the electric field cathode have the same length, and the electric field anode and the electric field cathode are positioned opposite each other in the front and rear direction; the auxiliary electrode is located in front of the electric field anode and the electric field cathode.
  • an auxiliary electric field is formed between the auxiliary electrode and the electric field anode, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode and the electric field cathode, so that the negatively charged oxygen ions between the electric field anode and the electric field cathode
  • the flow has a backward movement speed.
  • the negatively charged oxygen ions will be combined with the substance to be treated during the process of moving to the electric field anode and backward, because oxygen ions have a backward moving speed
  • the oxygen ions are combined with the substance to be treated, there will be no strong collision between the two, thereby avoiding large energy consumption due to the strong collision, making the oxygen ions easy to combine with the substance to be treated, and making The charging efficiency of the substances to be treated in the gas is higher, and more substances to be treated can be collected under the action of the anode of the electric field, which ensures that the dust removal efficiency of the electric field device is higher.
  • the electric field anode, the auxiliary electrode, and the electric field cathode constitute a dust removal unit, and there are multiple dust removal units to effectively improve the dust removal efficiency of the electric field device by using multiple dust removal units.
  • the above-mentioned substance to be processed may be granular dust.
  • the electric field device in this embodiment can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • FIG. 7 for the schematic diagram of the electric field device in this embodiment.
  • the auxiliary electrode 5083 extends in the left-right direction.
  • the length direction of the auxiliary electrode 5083 in this embodiment is different from the length direction of the electric field anode 5082 and the electric field cathode 5081.
  • the auxiliary electrode 5083 may be perpendicular to the electric field anode 5082.
  • the electric field cathode 5081 and the electric field anode 5082 are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the anode of the DC power supply.
  • the electric field cathode 5081 has a negative potential
  • the electric field anode 5082 and the auxiliary electrode 5083 both have a positive potential.
  • the electric field cathode 5081 and the electric field anode 5082 are opposed to each other in the front and rear direction, and the auxiliary electrode 5083 is located behind the electric field anode 5082 and the electric field cathode 5081.
  • an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field cathode 5081, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081.
  • the negatively charged oxygen ions will be combined with the substance to be treated in the process of moving to the electric field anode 5082 and backward.
  • Oxygen ions have a backward moving speed.
  • the oxygen ions are combined with the material to be treated, there will be no strong collision between the two, thus avoiding the large energy consumption caused by the strong collision, making the oxygen ions easy to interact with
  • the combination of the substances to be treated makes the charging efficiency of the substances to be treated in the gas higher. Then, under the action of the electric field anode 5082, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.
  • the electric field device in this embodiment can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention.
  • FIG. 8 for the structure diagram of the electric field device in this embodiment.
  • the auxiliary electrode 5083 extends in the left-right direction.
  • the length direction of the auxiliary electrode 5083 in this embodiment is different from the length direction of the electric field anode 5082 and the electric field cathode 5081.
  • the auxiliary electrode 5083 may be perpendicular to the electric field cathode 5081.
  • the electric field cathode 5081 and the electric field anode 5082 are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the cathode of the DC power supply.
  • the electric field cathode 5081 and the auxiliary electrode 5083 both have a negative electric potential, and the electric field anode 5082 has a positive electric potential.
  • the electric field cathode 5081 and the electric field anode 5082 are opposite to each other in the front and rear direction, and the auxiliary electrode 5083 is located in front of the electric field anode 5082 and the electric field cathode 5081.
  • an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field anode 5082.
  • the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081, so that the electric field anode 5082 and the electric field cathode 5081 are
  • the stream of negatively charged oxygen ions has a backward moving speed.
  • the negatively charged oxygen ions will be combined with the substance to be treated in the process of moving to the electric field anode 5082 and backward.
  • Oxygen ions have a backward moving speed.
  • the oxygen ions are combined with the material to be treated, there will be no strong collision between the two, thus avoiding the large energy consumption caused by the strong collision, making the oxygen ions easy to interact with
  • the combination of the substances to be treated makes the charging efficiency of the substances to be treated in the gas higher. Then, under the action of the electric field anode 5082, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.
  • FIG. 9 for a structural diagram of the electric field device in this embodiment.
  • the electric field device includes an electric field device inlet 3085, a flow channel 3086, an electric field flow channel 3087, and an electric field device outlet 3088 that are connected in sequence.
  • a front electrode 3083 is installed in the flow channel 3086.
  • the ratio of the area to the cross-sectional area of the flow channel 3086 is 99%-10%.
  • the electric field device also includes an electric field cathode 3081 and an electric field anode 3082.
  • the electric field flow channel 3087 is located between the electric field cathode 3081 and the electric field anode 3082.
  • the working principle of the electric field device of the present invention is: the gas containing particles enters the flow channel 3086 through the entrance 3085 of the electric field device, and the front electrode 3083 installed in the flow channel 3086 conducts electrons to some particles, and some particles are charged.
  • the electric field anode 3082 exerts an attractive force on the charged particles, and the charged particles move to the electric field anode 3082 until the part of the charged particles adhere to the electric field anode 3082, and at the same time, the electric field cathode in the electric field channel 3087
  • An ionizing electric field is formed between 3081 and the electric field anode 3082.
  • the ionizing electric field will charge another part of the uncharged particles, so that another part of the particles will also be attracted by the electric field anode 3082 after being charged, and finally adhere to the electric field anode 3082. Therefore, the above-mentioned electric field device is used to make the particles more efficient and fully charged, thereby ensuring that the electric field anode 3082 can collect more particles, and ensuring that the electric field device of the present invention has a higher collection efficiency for particles in the gas.
  • the cross-sectional area of the front electrode 3083 refers to the sum of the area of the front electrode 3083 along the solid part of the cross-section.
  • the ratio of the cross-sectional area of the front electrode 3083 to the cross-sectional area of the flow channel 3086 may be 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.
  • the front electrode 3083 and the electric field cathode 3081 are electrically connected to the cathode of the DC power supply, and the electric field anode 3082 is electrically connected to the anode of the DC power supply.
  • the front electrode 3083 and the electric field cathode 3081 both have a negative electric potential, and the electric field anode 3082 has a positive electric potential.
  • the front electrode 3083 in this embodiment may have a mesh shape, that is, a plurality of through holes are provided.
  • the structural feature of the front electrode 3083 with through holes is used to facilitate the flow of gas and particles through the front electrode 3083, and make the particles in the gas contact the front electrode 3083 more fully, thereby
  • the front electrode 3083 can conduct electrons to more particles and make the particles more efficient.
  • the electric field anode 3082 is tubular, the electric field cathode 3081 is rod-shaped, and the electric field cathode 3081 penetrates the electric field anode 3082.
  • the electric field anode 3082 and the electric field cathode 3081 have an asymmetric structure.
  • the ionizing electric field formed between the electric field cathode 3081 and the electric field anode 3082 will charge the particles when the gas flows into the electric field anode 3082 and collect the charged particles on the inner wall of the electric field anode 3082 under the attractive force exerted by the electric field anode 3082.
  • both the electric field anode 3082 and the electric field cathode 3081 extend in the front-rear direction, and the front end of the electric field anode 3082 is located in front of the front end of the electric field cathode 3081 in the front-rear direction. And as shown in FIG. 9, the rear end of the electric field anode 3082 is located behind the rear end of the electric field cathode 3081 in the front-rear direction.
  • the length of the electric field anode 3082 in the forward and backward direction is longer, so that the adsorption surface area on the inner wall of the electric field anode 3082 is larger, so that the attraction force to the particles with negative potential is greater, and it can collect more particulates.
  • the electric field cathode 3081 and the electric field anode 3082 constitute an ionization unit.
  • the electric field cathode 3081 is also called a corona charged electrode.
  • the aforementioned DC power supply is specifically a DC high-voltage power supply.
  • a DC high voltage is connected between the front electrode 3083 and the electric field anode 3082 to form a conductive loop; a DC high voltage is connected between the electric field cathode 3081 and the electric field anode 3082 to form an ionization discharge corona electric field.
  • the front electrode 3083 is a densely distributed conductor.
  • the front electrode 3083 When the easily charged dust and other particles pass through the front electrode 3083, the front electrode 3083 directly charges the particles with electrons, and the particles are then adsorbed by the electric field anode 3082 of the opposite electrode; at the same time, the uncharged particles pass the electric field cathode 3081 and the electric field anode 3082.
  • the formed ionization zone, the ionized oxygen formed in the ionization zone will charge the electrons to the particles, so that the particles continue to be charged and absorbed by the electric field anode 3082 of the opposite electrode.
  • the electric field device in this embodiment can form two or more power-on modes.
  • the ionization discharge corona electric field formed between the electric field cathode 3081 and the electric field anode 3082 can be used to charge the particles in the gas, and then the electric field anode 3082 can be used to collect the particles; and
  • the front electrode 3083 is used to directly electrify the particles in the gas, so that the particles in the gas are fully charged and then adsorbed by the electric field anode 3082.
  • the electric field dust removal system includes an electric field device and an ozone removing device 206.
  • the electric field device includes a dust removing electric field anode 10141 and a dust removing electric field cathode 10142.
  • the ozone removing device is used to remove or reduce the generation of the electric field device.
  • the ozone removal device is between the outlet of the electric field device and the outlet of the air dust removal system.
  • the dust removal electric field anode 10141 and the dust removal electric field cathode 10142 are used to generate an ionization dust removal electric field.
  • the ozone removing device includes an ozone digester for digesting ozone generated by the electric field device, the ozone digester is an ultraviolet ozone digester, and the arrow direction in the figure is the flow direction of the intake air.
  • An air dust removal method includes the following steps: the air is ionized to remove dust, and then the ozone generated by the air ionization and dust removal is subjected to ozone digestion, and the ozone digestion is ultraviolet digestion.
  • the ozone removing device is used to remove or reduce the ozone generated by the electric field device. Ozone is formed due to the ionization of oxygen in the air.
  • This embodiment provides a clean room system 100 for semiconductor manufacturing, including a clean room 101, an electric field dust removal system 102; the clean room 101 includes a gas inlet; the electric field dust removal system 102 includes a dust removal system inlet, a dust removal system outlet, Electric field device 1021; the gas inlet of the clean room is connected to the outlet of the dust removal system of the electric field dust removal system.
  • Figure 11 is a schematic diagram of the structure of the clean room system in this embodiment.
  • the electric field dust removal system includes any one of the electric field devices in the foregoing embodiments 1-17.
  • the air must first flow through the electric field device to effectively remove the dust waiting to be processed from the air by the electric field device.
  • the typical 23nm particle removal efficiency is over 99.99% to ensure that the air is cleaner and the gas entering the clean room meets the requirements Requirements of the semiconductor manufacturing environment.
  • Embodiment 19 Ionization dust removal system and method
  • the electric field dust removal processing method includes: passing dust-containing air through an ionizing electric field generated by an electric field anode and an electric field cathode to perform dust removal processing.
  • the electric field dust removal processing method further includes: selecting the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode, the distance between the electric field anode and the electric field cathode, and The length of the electric field anode and the length of the electric field cathode make the coupling times of the ionization electric field ⁇ 3.
  • the electric field dust removal processing method further includes: a method for providing an auxiliary electric field, including:
  • the electric field device in this embodiment adopts the electric field device provided in embodiment 1.
  • the gas is transported into the electric field device for electric field dust removal treatment, the flow rate of the gas into the electric field device is controlled to 6m/s, the particulate matter in the gas is removed, and it is finally discharged from the outlet of the electric field device.
  • the PN value of solid particles of different sizes in the gas is detected at the inlet and outlet of the electric field device.
  • the specific detection particle size is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, 10 ⁇ m.
  • the PN value of solid particles in the gas at the inlet of the electric field device is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, 10 ⁇ m, see Table 1.
  • the electric field dust removal processing method includes: passing dust-containing air through an ionizing electric field generated by an electric field anode and an electric field cathode to perform dust removal processing.
  • the electric field device of embodiment 16 is used to transport dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s, and the particulate matter in the gas is removed. The outlet of the electric field device is discharged. Others are the same as in Example 19.
  • the PN value of solid particles in the original dust-containing gas that is, the gas at the entrance of the electric field device is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, and 10 ⁇ m, see Table 1.
  • the DC power supply parameters of the electric field device were adjusted to 9.10kV and 2.98mA for 600s, and the experiment of removing organic solid particles was carried out. Under this electric field condition, the requirements for the removal efficiency of 23nm particles in the gas were met. Under this electric field condition, the gas at the outlet of the electric field device.
  • the experimental data of the PN value of the size solid particles are shown in Table 7.
  • the data in Table 7 are the average values of 6 samples. It can be seen from Table 7 that the removal efficiency of 23nm, 0.3 ⁇ m and 0.5 ⁇ m solid particles under the electric field conditions all reach more than 99.99%.
  • the electric field dust removal treatment method includes: making dust-laden air pass through the ionizing electric field generated by the electric field anode and the electric field cathode for dust removal treatment; and further includes: selecting the dust accumulation area of the electric field anode and the discharge of the electric field cathode The area ratio makes the coupling times of the ionization electric field ⁇ 3.
  • the electric field device provided in embodiment 8 is used to transport dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s to remove particles in the gas, and finally the electric field device The outlet of the electric field device is discharged.
  • the PN value of solid particles of different sizes in the gas is detected at the inlet and outlet of the electric field device.
  • the specific detection particle size is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, 10 ⁇ m.
  • the PN value of solid particles in the original dust-containing gas, that is, the gas at the entrance of the electric field device is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, and 10 ⁇ m, see Table 1.
  • the DC power supply parameters of the electric field device were adjusted to 9.10kV and 2.98mA for 600s, and the experiment of removing organic solid particles was carried out. Under this electric field condition, the requirements for the removal efficiency of 23nm particles in the gas were met. Under this electric field condition, the gas at the outlet of the electric field device See Table 10 for the experimental data of the PN value of solid particles of various sizes. The data in Table 10 are the average values of 6 samplings. It can be seen from Table 10 that the removal efficiency of 23nm, 0.3 ⁇ m and 0.5 ⁇ m solid particles under this electric field condition is over 99.99%.
  • the electric field dust removal treatment method includes: passing dust-laden air through the ionizing electric field generated by the electric field anode and the electric field cathode for dust removal; further comprising: selecting the length of the electric field anode so that the coupling times of the ionizing electric field ⁇ 3.
  • the electric field device provided in embodiment 9 is used to transport the dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s, and the particulate matter in the gas is removed. The outlet of the electric field device is discharged.
  • the PN value of solid particles in the original dust-containing gas that is, the gas at the entrance of the electric field device is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, and 10 ⁇ m, see Table 1.
  • the DC power supply parameters of the electric field device were adjusted to 9.10kV and 2.98mA for 600s, and the experiment of removing organic solid particles was carried out.
  • the experimental data is shown in Table 13.
  • the data in Table 13 are the average values of 6 samples. Under the electric field condition, the removal efficiency of 23nm, 0.3 ⁇ m and 0.5 ⁇ m solid particles all reach more than 99.99%.
  • the electric field conditions of 7.07 kV and 0.79 mA, and the electric field conditions of 9.10 kV and 2.98 mA can meet the requirement for the removal efficiency of 23nm particles in the gas to be above 99.99.
  • the electric field dust removal treatment method includes: passing dust-laden air through the ionizing electric field generated by the electric field anode and the electric field cathode for dust removal; further comprising: selecting the electric field cathode length so that the coupling times of the ionizing electric field are ⁇ 3.
  • the electric field device provided in embodiment 10 is used to transport the dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s to remove particles in the gas, and finally the electric field device The outlet of the electric field device is discharged.
  • the PN value of solid particles of different sizes in the gas is detected at the inlet and outlet of the electric field device.
  • the specific detection particle size is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, 10 ⁇ m.
  • the PN value of solid particles in the original dust-containing gas, that is, the gas at the entrance of the electric field device is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, and 10 ⁇ m, see Table 1.
  • the DC power supply parameters of the electric field device were adjusted to 9.10kV and 2.98mA for 600s, and the experiment of removing organic solid particles was carried out.
  • the experimental data is shown in Table 16.
  • the data in Table 16 are the average values of 6 samples. Under the electric field condition, the removal efficiency of 23nm, 0.3 ⁇ m and 0.5 ⁇ m solid particles are all 99.99%.
  • the electric field conditions of 9.10 kV and 2.98 mA can meet the requirement for the removal efficiency of 23nm particles in the gas to be above 99.99.
  • the electric field dust removal processing method includes: making dust-laden air pass through the ionizing electric field generated by the electric field anode and the electric field cathode for dust removal treatment; and further includes: selecting the distance between the electric field anode and the electric field cathode so that The coupling times of the ionization electric field ⁇ 3.
  • the electric field device provided in embodiment 11 is used to transport the dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s to remove the particulate matter in the gas, and finally the electric field device The outlet of the electric field device is discharged.
  • This embodiment uses the electric field device of Embodiment 11.
  • the dust-containing gas is transported into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s to remove particles in the gas, and finally discharged from the electric field device outlet of the electric field device.
  • the PN value of solid particles of different sizes in the gas is detected at the inlet and outlet of the electric field device.
  • the specific detection particle size is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, 10 ⁇ m.
  • the PN value of solid particles in the original dust-containing gas that is, the gas at the entrance of the electric field device is 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, and 10 ⁇ m, see Table 1.
  • the DC power supply parameters of the electric field device were adjusted to 9.10kV and 2.98mA, and the experiment of removing organic solid particles was carried out.
  • Table 19 The data in Table 19 are the average values of 6 samples. Under the electric field condition, the removal efficiency of 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, and 10 ⁇ m solid particles reaches more than 99.99%.
  • the electric field conditions of 7.07 kV and 0.79 mA, and the electric field conditions of 9.10 kV and 2.98 mA can meet the requirement for the removal efficiency of 23nm particles in the gas to be above 99.99%.
  • the electric field dust removal processing method includes: making dust-containing air pass through the ionizing electric field generated by the electric field anode and the electric field cathode to perform dust removal processing; and also includes a method of providing an auxiliary electric field.
  • This embodiment uses the electric field device of Embodiment 12.
  • the dust-containing gas is transported into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s to remove particles in the gas, and finally discharged from the electric field device outlet of the electric field device.
  • the original dust-containing gas that is, the gas at the inlet of the electric field device has a particle size of 23nm, 0.3 ⁇ m, 0.5 ⁇ m, 1.0 ⁇ m, 3.0 ⁇ m, 5.0 ⁇ m, and 10 ⁇ m for the PN value of solid particles. See Table 1.
  • the DC power supply parameters of the electric field device were adjusted to 9.10kV and 2.98mA for 600s, and the experiment of removing organic solid particles was performed.
  • the experimental data is shown in Table 22.
  • the data in Table 22 are the average values of 6 samples.
  • the electric field conditions of 9.10 kV and 2.98 mA can meet the requirement for the removal efficiency of 23nm particles in the gas to be above 99.99%.
  • This embodiment provides a semiconductor manufacturing method, including the following steps:
  • Air dust removal air enters the electric field dust removal system through the ionizing electric field generated by the electric field anode and the electric field cathode to remove particles in the gas; the electric field dust removal system in this embodiment includes the electric field device in embodiment 1-17;
  • the purified gas after dedusting by the electric field enters the clean room to provide purified gas for semiconductor manufacturing in the clean room.
  • the formation of the groove includes the following steps:
  • the exposed film is etched to expose part of the substrate surface to form a channel.
  • the photoresist can be a positive glue or a reverse glue.
  • the material of the substrate may be silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide.
  • the main component of the thin film is one or any combination of silicon nitride, silicon oxide, silicon carbide, and polysilicon.
  • the etching may be dry etching or wet etching.
  • step S3 the ion infiltration is diffusion or ion implantation.
  • step S3 the electronic characteristic is a PN junction.
  • the present invention effectively overcomes various shortcomings in the prior art and has high industrial value.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Animal Behavior & Ethology (AREA)
  • Veterinary Medicine (AREA)
  • Public Health (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrostatic Separation (AREA)

Abstract

L'invention concerne un système de salle blanche (100) pour la fabrication de semi-conducteurs et un procédé associé d'élimination de poussière à champ électrique. Le système de salle blanche (100) comprend une salle blanche (101) et un système d'élimination de poussière à champ électrique (102) ; la salle blanche (101) comprend un orifice d'admission de gaz ; le système d'élimination de poussière à champ électrique (102) comprend un orifice de sortie de système d'élimination de poussière et un dispositif de champ électrique (1021) ; l'orifice d'admission de gaz de la salle blanche (101) est en communication avec l'orifice de sortie de système d'élimination de poussière du système d'élimination de poussière à champ électrique (102) ; le dispositif de champ électrique (1021) comprend un orifice d'admission de dispositif de champ électrique (3085), un orifice de sortie de dispositif de champ électrique (3088), une cathode de champ électrique (3081) et une anode de champ électrique (3082), la cathode de champ électrique (3081) et l'anode de champ électrique (3082) étant utilisées pour générer un champ électrique ionisant. Le système d'élimination de poussière à champ électrique (102) permet d'éliminer efficacement les particules générées dans le secteur de la fabrication des semi-conducteurs.
PCT/CN2020/086855 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et procédé associé d'élimination de poussière à champ électrique WO2020216360A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202080030944.7A CN114072619A (zh) 2019-04-25 2020-04-24 一种用于半导体制造的洁净室系统及其电场除尘方法

Applications Claiming Priority (20)

Application Number Priority Date Filing Date Title
CN201910340445.7 2019-04-25
CN201910340443 2019-04-25
CN201910340443.8 2019-04-25
CN201910340445 2019-04-25
CN201910446294.3 2019-05-27
CN201910446294 2019-05-27
CN201910452169.3 2019-05-28
CN201910452169 2019-05-28
CN201910522488.7 2019-06-17
CN201910522488 2019-06-17
CN201910521796 2019-06-17
CN201910521796.8 2019-06-17
CN201910605156 2019-07-05
CN201910605156.5 2019-07-05
CN201910636710.6 2019-07-15
CN201910636710 2019-07-15
CN202010323654.3A CN113522526A (zh) 2020-04-22 2020-04-22 一种用于半导体制造的洁净室系统及其电场除尘方法
CN202010322636.3A CN113522525A (zh) 2020-04-22 2020-04-22 一种用于半导体制造的洁净室系统及其多级电场除尘方法
CN202010322636.3 2020-04-22
CN202010323654.3 2020-04-22

Publications (1)

Publication Number Publication Date
WO2020216360A1 true WO2020216360A1 (fr) 2020-10-29

Family

ID=72940620

Family Applications (9)

Application Number Title Priority Date Filing Date
PCT/CN2020/086849 WO2020216354A1 (fr) 2019-04-25 2020-04-24 Procédé de conception d'un système d'élimination de poussière de champ électrique à étages multiples pour système de salle blanche de fabrication de semi-conducteurs
PCT/CN2020/086855 WO2020216360A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et procédé associé d'élimination de poussière à champ électrique
PCT/CN2020/086848 WO2020216353A1 (fr) 2019-04-25 2020-04-24 Procédé d'élimination de poussière de champ électrique à étages multiples pour système de salle blanche de fabrication de semi-conducteurs et procédé de fabrication de semi-conducteurs
PCT/CN2020/086853 WO2020216358A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et procédé d'élimination de poussière de champ électrique associé
PCT/CN2020/086850 WO2020216355A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et procédé d'élimination de poussière à base de champ électrique associé
PCT/CN2020/086854 WO2020216359A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et procédé d'élimination de poussière par champ électrique associé
PCT/CN2020/086847 WO2020216352A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et système de fabrication de semi-conducteurs
PCT/CN2020/086852 WO2020216357A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et son procédé d'élimination de poussière de champ électrique
PCT/CN2020/086851 WO2020216356A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et son procédé d'élimination de poussière de champ électrique

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/086849 WO2020216354A1 (fr) 2019-04-25 2020-04-24 Procédé de conception d'un système d'élimination de poussière de champ électrique à étages multiples pour système de salle blanche de fabrication de semi-conducteurs

Family Applications After (7)

Application Number Title Priority Date Filing Date
PCT/CN2020/086848 WO2020216353A1 (fr) 2019-04-25 2020-04-24 Procédé d'élimination de poussière de champ électrique à étages multiples pour système de salle blanche de fabrication de semi-conducteurs et procédé de fabrication de semi-conducteurs
PCT/CN2020/086853 WO2020216358A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et procédé d'élimination de poussière de champ électrique associé
PCT/CN2020/086850 WO2020216355A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et procédé d'élimination de poussière à base de champ électrique associé
PCT/CN2020/086854 WO2020216359A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et procédé d'élimination de poussière par champ électrique associé
PCT/CN2020/086847 WO2020216352A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et système de fabrication de semi-conducteurs
PCT/CN2020/086852 WO2020216357A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et son procédé d'élimination de poussière de champ électrique
PCT/CN2020/086851 WO2020216356A1 (fr) 2019-04-25 2020-04-24 Système de salle blanche pour la fabrication de semi-conducteurs et son procédé d'élimination de poussière de champ électrique

Country Status (3)

Country Link
CN (6) CN114072619A (fr)
TW (7) TWI730738B (fr)
WO (9) WO2020216354A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230018029A1 (en) * 2021-07-16 2023-01-19 Taiwan Semiconductor Manufacturing Company Ltd. Particle removal method in semiconductor fabrication process
CN113713526A (zh) * 2021-09-02 2021-11-30 张家港光煌新材料科技有限公司 一种砷化镓制备用尾气过滤装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050112638A (ko) * 2004-05-27 2005-12-01 삼성전자주식회사 가스 분사 수단 및 이를 이용한 반도체 소자의 제조 장치
US20070009406A1 (en) * 1998-11-05 2007-01-11 Sharper Image Corporation Electrostatic air conditioner devices with enhanced collector electrode
CN104819519A (zh) * 2015-05-19 2015-08-05 常熟市东神电子器件有限公司 一种复合型交叉静电电场空气净化装置
CN105003976A (zh) * 2014-04-22 2015-10-28 王绍坤 双水层、双静电分离式空气净化装置
CN106642377A (zh) * 2016-11-11 2017-05-10 爱普瑞环保科技（广东）有限公司 一种空气净化装置
CN106714853A (zh) * 2014-08-12 2017-05-24 诺维诺思专利有限公司 用于生成等离子体的柔性电极组件和包括所述柔性电极组件的空气处理系统
CN108212536A (zh) * 2016-12-22 2018-06-29 维美德技术有限公司 方法及设备
CN109643681A (zh) * 2016-08-09 2019-04-16 近藤工业株式会社 半导体制造装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150457A (en) * 1981-03-12 1982-09-17 Hitachi Plant Eng & Constr Co Ltd Purifier for air
DE3310536A1 (de) * 1983-03-21 1984-09-27 Delbag-Luftfilter Gmbh, 1000 Berlin Elektroschwebstoffilter
JPH0674908B2 (ja) * 1988-06-27 1994-09-21 株式会社荏原製作所 気体の清浄方法及びその装置
JP2627575B2 (ja) * 1990-08-15 1997-07-09 高砂熱学工業株式会社 半導体製造用クリーンルームの海塩粒子汚染防止方法
CN2205248Y (zh) * 1994-09-13 1995-08-16 郑天安 高效静电除尘器
CN2269215Y (zh) * 1996-07-19 1997-12-03 甘平 通风型高效灭菌空气净化机
JP3460465B2 (ja) * 1996-08-20 2003-10-27 株式会社荏原製作所 気体の清浄方法と装置
JP2001179127A (ja) * 1999-12-27 2001-07-03 Daikin Ind Ltd 電気集塵装置
US20020121352A1 (en) * 2001-03-02 2002-09-05 Lawson J. Alan Electrical field apparatus and methods for fluid for decontamination and other purposes
JP2002289671A (ja) * 2001-03-28 2002-10-04 Toshiba Corp 半導体製造装置及び半導体装置の製造システム
JP3831312B2 (ja) * 2002-07-29 2006-10-11 日本テストパネル株式会社 排気ガス清浄化装置
CN1520935A (zh) * 2003-02-14 2004-08-18 朱益民 非热放电和光催化协同净化污染空气装置
CN100418637C (zh) * 2004-06-10 2008-09-17 中钢集团天澄环保科技股份有限公司 泛比电阻电除尘器及除尘方法
CN201006047Y (zh) * 2007-03-30 2008-01-16 黄樟焱 多功能旋风式等离子空气处理机
CN101376033A (zh) * 2007-08-27 2009-03-04 华懋科技股份有限公司 无尘室进气净化设备
CN101376034B (zh) * 2008-10-06 2012-10-03 陈竞坤 一种高效电离驱动空气净化装置的电极及电路
JP2010110692A (ja) * 2008-11-06 2010-05-20 Daikin Ind Ltd 荷電装置及び空気処理装置
CN101920224B (zh) * 2009-12-31 2012-10-10 周云正 金属带--板结构反应器
CN102671763A (zh) * 2012-04-30 2012-09-19 莱芜钢铁集团有限公司 管道式高风速双荷电区电凝聚装置
CN203108663U (zh) * 2013-01-18 2013-08-07 上海永健仪器设备有限公司 蜂窝静电除尘灭菌模块
CN104275242B (zh) * 2013-07-11 2017-06-16 宁波哲恺电器有限公司 一种空气净化器
US9427746B2 (en) * 2013-10-01 2016-08-30 Honeywell International Inc. Aircraft electrostatic particle separation control system
CN103706475B (zh) * 2013-12-30 2016-06-01 浙江星月电器有限公司 一种静电式空气净化器的低臭氧装置
CN103817007B (zh) * 2014-03-05 2016-05-18 武汉钢铁(集团)公司 横向极板双极静电凝并除尘装置及其除尘方法
CN104084312B (zh) * 2014-07-31 2017-02-08 颜为 一种静电式空气净化器的集尘装置
CN104127907A (zh) * 2014-08-06 2014-11-05 上海侃亿诺纺织品有限公司 非热等离子体空气净化消毒反应器
CN205518205U (zh) * 2016-03-31 2016-08-31 深圳市中科建设集团有限公司 一种带自动吹风功能的百级无尘车间
CN105689140B (zh) * 2016-04-15 2018-04-10 湖北强达环保科技股份有限公司 一种高效静电除尘器
CN205966185U (zh) * 2016-08-10 2017-02-22 福建龙净环保股份有限公司 一种用于烟气净化的电除雾器
CN106504994A (zh) * 2016-11-08 2017-03-15 信利（惠州）智能显示有限公司 多晶硅薄膜晶体管的生产方法
CN106733194B (zh) * 2017-03-31 2018-10-16 广东美的厨房电器制造有限公司 静电装置和油烟机
CN206980986U (zh) * 2017-07-18 2018-02-09 佛山市嘉名环保节能设备科技有限公司 一种静电除尘装置
CN108499739B (zh) * 2017-09-30 2023-07-07 江森自控空调冷冻设备(无锡)有限公司 高压电源电路、高压电源板以及控制高压电压输出的方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070009406A1 (en) * 1998-11-05 2007-01-11 Sharper Image Corporation Electrostatic air conditioner devices with enhanced collector electrode
KR20050112638A (ko) * 2004-05-27 2005-12-01 삼성전자주식회사 가스 분사 수단 및 이를 이용한 반도체 소자의 제조 장치
CN105003976A (zh) * 2014-04-22 2015-10-28 王绍坤 双水层、双静电分离式空气净化装置
CN106714853A (zh) * 2014-08-12 2017-05-24 诺维诺思专利有限公司 用于生成等离子体的柔性电极组件和包括所述柔性电极组件的空气处理系统
CN104819519A (zh) * 2015-05-19 2015-08-05 常熟市东神电子器件有限公司 一种复合型交叉静电电场空气净化装置
CN109643681A (zh) * 2016-08-09 2019-04-16 近藤工业株式会社 半导体制造装置
CN106642377A (zh) * 2016-11-11 2017-05-10 爱普瑞环保科技（广东）有限公司 一种空气净化装置
CN108212536A (zh) * 2016-12-22 2018-06-29 维美德技术有限公司 方法及设备

Also Published As

Publication number Publication date
WO2020216358A1 (fr) 2020-10-29
WO2020216352A1 (fr) 2020-10-29
CN218763868U (zh) 2023-03-28
TWI739502B (zh) 2021-09-11
CN114072620A (zh) 2022-02-18
CN114072619A (zh) 2022-02-18
TWI739499B (zh) 2021-09-11
CN113767254A (zh) 2021-12-07
WO2020216357A1 (fr) 2020-10-29
TWI739500B (zh) 2021-09-11
WO2020216356A1 (fr) 2020-10-29
TWI754983B (zh) 2022-02-11
TWI739501B (zh) 2021-09-11
WO2020216355A1 (fr) 2020-10-29
WO2020216359A1 (fr) 2020-10-29
TW202042908A (zh) 2020-12-01
CN113727783A (zh) 2021-11-30
WO2020216354A1 (fr) 2020-10-29
TW202106390A (zh) 2021-02-16
WO2020216353A1 (fr) 2020-10-29
TW202106391A (zh) 2021-02-16
TWI730738B (zh) 2021-06-11
TW202042910A (zh) 2020-12-01
TW202039085A (zh) 2020-11-01
CN113727782A (zh) 2021-11-30
TW202101644A (zh) 2021-01-01
TW202042909A (zh) 2020-12-01

Similar Documents

Publication Publication Date Title
TW202015814A (zh) 空氣除塵系統
WO2020216360A1 (fr) Système de salle blanche pour la fabrication de semi-conducteurs et procédé associé d'élimination de poussière à champ électrique
CN218132543U (zh) 一种用于半导体制造的洁净室系统
CN113522526A (zh) 一种用于半导体制造的洁净室系统及其电场除尘方法
WO2020238978A1 (fr) Dispositif de champ électrique et procédé de réduction de couplages de champ électrique
CN113522525A (zh) 一种用于半导体制造的洁净室系统及其多级电场除尘方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20795834

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20795834

Country of ref document: EP

Kind code of ref document: A1