WO2020206778A1 - 有机发光二极管显示装置及其制造方法 - Google Patents

有机发光二极管显示装置及其制造方法 Download PDF

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Publication number
WO2020206778A1
WO2020206778A1 PCT/CN2019/085927 CN2019085927W WO2020206778A1 WO 2020206778 A1 WO2020206778 A1 WO 2020206778A1 CN 2019085927 W CN2019085927 W CN 2019085927W WO 2020206778 A1 WO2020206778 A1 WO 2020206778A1
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Prior art keywords
layer
patterned
light
transmitting
light emitting
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PCT/CN2019/085927
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English (en)
French (fr)
Inventor
周星宇
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020206778A1 publication Critical patent/WO2020206778A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a light emitting diode display device and a manufacturing method thereof, in particular to an organic light emitting diode display device and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • advantages such as thinness, active light emission, fast response speed, large viewing angle, wide color gamut, high brightness and low power consumption, and have gradually become a successor.
  • the third-generation display technology after the liquid crystal display.
  • the aperture ratio of the existing transparent display OLED panel is still insufficient, which further affects the display effect.
  • the present invention provides an organic light emitting diode display device and a manufacturing method thereof to solve the problem of insufficient aperture ratio in the prior art.
  • An object of the present invention is to provide an organic light emitting diode display device, which can improve the aperture ratio of the organic light emitting diode display device.
  • Another object of the present invention is to provide a method for manufacturing an organic light emitting diode display device, which can improve the aperture ratio of the organic light emitting diode display device without increasing the number of masks.
  • an embodiment of the present invention provides a manufacturing method of an organic light emitting diode display device.
  • the manufacturing method includes the steps of: providing a substrate; forming a patterned gate metal layer on the substrate; Located in a thin film transistor area; forming a gate insulating layer on the patterned gate metal layer and on the substrate located in a capacitor area and a light emitting area, wherein the capacitor area is located in the thin film transistor Area and the light-emitting area; forming a patterned light-transmitting semiconductor layer on the gate insulating layer and located in the thin film transistor area and the capacitor area, which is located in the thin film transistor area
  • the patterned light-transmitting semiconductor layer forms a channel region; a lithography and dry etching step is performed to form a through hole penetrating the gate insulating layer of the thin film transistor region, and so that the capacitor located in the capacitor region
  • the patterned light-transmitting semiconductor layer forms a light-transmitting conductor layer
  • the manufacturing method further includes the step of forming an organic light emitting diode layer on the third part.
  • the manufacturing method further includes the step of forming a patterned cathode layer on the organic light-emitting diode layer and the pixel definition layer, wherein The patterned cathode layer is located in the thin film transistor area and the light emitting area.
  • the material of the patterned transparent semiconductor layer includes at least one of indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), and indium gallium zinc tin oxide (IGZTO) One kind.
  • IGZO indium gallium zinc oxide
  • IZTO indium zinc tin oxide
  • IGZTO indium gallium zinc tin oxide
  • an embodiment of the present invention provides an organic light emitting diode display device, which defines a thin film transistor area, a capacitor area, and a light emitting area, wherein the capacitor area is located between the thin film transistor area and the light emitting area. Between the light-emitting areas.
  • the organic light emitting diode display device includes: a substrate, a patterned gate metal layer, a gate insulating layer, an active layer, a light-transmitting conductor layer, a wire layer, a passivation layer, a flat layer, and A light-transmitting anode layer.
  • the patterned gate metal layer is provided on the substrate and located in the thin film transistor area.
  • the gate insulating layer is provided on the patterned gate metal layer and the substrate located in the capacitor region and the light emitting region.
  • the active layer is disposed on the gate insulating layer and located in the thin film transistor region, wherein the active layer includes a source region, a drain region, and a channel region.
  • the light-transmitting conductor layer is arranged on the gate insulating layer and is located in the capacitor region.
  • the wire layer penetrates the gate insulating layer to electrically connect the patterned gate metal layer and the transparent conductor layer.
  • the passivation layer covers the active layer, the light-transmitting conductor layer, and the wire layer.
  • the flat layer is provided on the passivation layer.
  • the transparent anode layer is disposed on the flat layer and includes a first part, a second part, and a third part.
  • the first part penetrates the planarization layer and the passivation layer to electrically connect the source region.
  • the second part is located in the capacitor area and forms a transparent capacitor with the transparent conductor layer.
  • the third part is located in the light-emitting area.
  • the organic light emitting diode display device further includes a pixel definition layer disposed on the transparent anode layer and the flat layer, wherein the pixel definition layer exposes the third portion .
  • the organic light emitting diode display device further includes an organic light emitting diode layer disposed on the third part.
  • the organic light emitting diode display device further includes a patterned cathode layer disposed on the organic light emitting diode layer and the pixel definition layer, wherein the patterned cathode layer is located on the The thin film transistor area and the light-emitting area.
  • another embodiment of the present invention provides a manufacturing method of an organic light-emitting diode display device.
  • the manufacturing method includes the steps of: providing a substrate; forming a patterned gate metal layer on the substrate and located in a thin film Forming a gate insulating layer on the patterned gate metal layer and on the substrate in a capacitor area and a light emitting area, wherein the capacitor area is located in the thin film transistor area and the Between the light-emitting areas; forming a patterned light-transmitting semiconductor layer on the gate insulating layer and located in the thin film transistor area and the capacitor area, wherein the patterned transparent semiconductor layer located in the thin film transistor area
  • the optical semiconductor layer forms a channel region; a lithography and dry etching step is performed to form a through hole through the gate insulating layer of the thin film transistor region, and to make the patterned in the capacitor region transparent
  • the semiconductor layer forms a light-transmitting conductor layer; and forms a patterned metal layer, wherein the patterned metal layer includes
  • the manufacturing method further includes the step of forming a pixel definition layer on the transparent anode layer and the flat layer, wherein the pixel The definition layer exposes the third part.
  • the manufacturing method further includes the step of forming an organic light emitting diode layer on the third part.
  • the manufacturing method further includes the step of forming a patterned cathode layer on the organic light emitting diode layer and the pixel defining layer, wherein the The patterned cathode layer is located in the thin film transistor area and the light emitting area.
  • the step of lithography and dry etching further includes: forming a photoresist layer on the patterned light-transmitting semiconductor layer and the gate insulating layer; and patterning the photoresist layer , To expose a portion of the gate insulating layer of the thin film transistor region and the patterned light-transmitting semiconductor layer in the capacitor region; perform a dry etching process to bombard the gate insulating layer of the thin film transistor region with an ion And the patterned light-transmitting semiconductor layer in the capacitor region to form the through hole and the light-transmitting conductor layer.
  • the material of the patterned light-transmitting semiconductor layer includes indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), and indium gallium zinc oxide (IGZO). At least one of indium gallium zinc tin oxide (IGZTO).
  • the organic light-emitting diode display device of the present invention adopts a light-transmitting conductor layer and a light-transmitting anode layer to form a light-transmitting capacitor to improve the aperture ratio of the organic light-emitting diode display device.
  • the manufacturing method of the organic light emitting diode display device of the present invention can improve the aperture ratio of the organic light emitting diode display device without increasing the number of masks.
  • FIG. 1 is a schematic cross-sectional view of an organic light emitting diode display device according to an embodiment of the invention.
  • FIG. 2 is a schematic flowchart of a method for manufacturing an organic light emitting diode display device according to an embodiment of the present invention.
  • 3A to 3E are schematic cross-sectional views of various manufacturing steps of a method of manufacturing an organic light emitting diode display device according to an embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of an organic light emitting diode display device 10 according to an embodiment of the present invention.
  • the organic light emitting diode display device 10 defines a thin film transistor area 101, a capacitor area 102 and a light emitting area 103, wherein the capacitor area 102 is located between the thin film transistor area 101 and the light emitting area 103.
  • the organic light emitting diode display device 10 includes a substrate 11, a patterned gate metal layer 12, a gate insulating layer 13, an active layer 14, a light-transmitting conductor layer 15, a wire layer 16, and a passivation layer. Layer 17, a flat layer 18 and a transparent anode layer 19.
  • the substrate 11 is mainly used to carry the components of the organic light emitting diode display device 10, for example, including the patterned gate metal layer 12, the gate insulating layer 13, the active layer 14, and the light-transmitting layer.
  • the substrate 11 is a flexible substrate, a transparent substrate, or a flexible transparent substrate.
  • the patterned gate metal layer 12 is disposed on the substrate 11 and located in the thin film transistor area 101.
  • the patterned gate metal layer 12 may be formed on the substrate 11 and located in the thin film transistor region 101 by means of photolithography, for example.
  • the material of the patterned gate metal layer 12 includes at least one of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy composition containing the foregoing materials .
  • the thickness of the patterned gate metal layer 12 is, for example, between 2000 and 10000 ⁇ .
  • the gate insulating layer 13 is provided on the patterned gate metal layer 12 and the substrate 11 located in the capacitor region 102 and the light emitting region 103.
  • the gate insulating layer 13 may be formed on the patterned gate metal layer 12 and the substrate 11 located in the capacitor region 102 and the light-emitting region 103, for example, by deposition. on.
  • the material of the gate insulating layer 13 includes at least one of silicon oxide and silicon nitride.
  • the gate insulating layer 13 may include one or a combination of a silicon oxide layer and a silicon nitride layer, for example.
  • the thickness of the gate insulating layer 13 is, for example, between 1000 and 5000 ⁇ .
  • the active layer 14 is disposed on the gate insulating layer 13 and located in the thin film transistor region 101, wherein the active layer 14 includes a source region 141, a drain region 142, and a channel region 143.
  • the active layer and the patterned gate metal layer 12 together form a thin film transistor structure. More specifically, the active layer and the patterned gate metal layer 12 together form a back channel etched (BCE) thin film transistor structure.
  • BCE back channel etched
  • the material of the source region 141 and the drain region 142 includes at least one of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), or includes The alloy composition of the above materials.
  • the thickness of each of the source region 141 and the drain region 142 is between 2000 and 10000 ⁇ , for example.
  • the material of the channel region 143 includes indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), and indium gallium zinc tin oxide (IZTO). gallium zinc tin oxide; IGZTO).
  • the thickness of the channel region 143 is, for example, between 100 and 1000 ⁇ .
  • the transparent conductive layer 15 is disposed on the gate insulating layer 13 and is located in the capacitor region 102.
  • the material of the light-transmitting conductor layer 15 includes conductive indium gallium zinc oxide (IGZO), conductive indium zinc tin oxide (IZTO), and At least one of conductive indium gallium zinc tin oxide (IGZTO).
  • IGZO conductive indium gallium zinc oxide
  • IZTO conductive indium zinc tin oxide
  • IGZTO conductive indium gallium zinc tin oxide
  • the conductive treatment may be performed, for example, in a dry etching treatment (for example, ion bombardment (or plasma bombardment) is used).
  • the light-transmitting conductor layer 15 and the channel region 143 can be formed through the same lithography etching step (lithography and dry etching step).
  • the wire layer 16 penetrates the gate insulating layer 13 to electrically connect the patterned gate metal layer 12 and the transparent conductor layer 15.
  • the material of the wire layer 16 includes at least one of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), or an alloy composition including the foregoing materials.
  • the thickness of the wire layer 16 is between 2000 and 10000 ⁇ , for example.
  • the wire layer 16, the source region 141, and the drain region 142 can be formed by the same photolithographic etching step.
  • the passivation layer 17 covers the active layer 14, the light-transmitting conductor layer 15 and the wire layer 16.
  • the material of the passivation layer 17 includes at least one of silicon oxide and silicon nitride.
  • the passivation layer 17 may include one or a combination of a silicon oxide layer and a silicon nitride layer, for example.
  • the thickness of the passivation layer 17 is, for example, between 1000 and 5000 ⁇ .
  • the flat layer 18 is disposed on the passivation layer 17, and the light-transmitting anode layer 19 is disposed on the flat layer 18.
  • the material of the transparent anode layer 19 includes, for example, indium tin oxide (ITO).
  • the transparent anode layer 19 includes a first part 191, a second part 192 and a third part 193.
  • the first portion 191 penetrates the flat layer 18 and the passivation layer 17 to electrically connect the source region 141.
  • the second portion 192 is located in the capacitor region 102 and forms a transparent capacitor C with the transparent conductor layer 15.
  • the third portion 193 is located in the light-emitting area 103 and serves as an anode of a subsequent component (for example, an organic light-emitting diode layer formed later).
  • the light-transmitting capacitor C of the organic light-emitting diode display device 10 of the embodiment of the present invention has a light-transmitting property, it can prevent light from being blocked, thereby increasing the aperture ratio.
  • the organic light emitting diode display device 10 may further include other layered structures.
  • the organic light emitting diode display device 10 further includes a pixel definition layer 194 disposed on the transparent anode layer 19 and the flat layer 18, wherein the pixel definition layer 194 exposes the third portion 193.
  • the pixel defining layer 194 can define the light-emitting area (ie, the third portion 193) of the organic light emitting diode (OLED) layer 195 to be formed later.
  • the organic light emitting diode display device 10 further includes an organic light emitting diode layer 195 disposed on the third portion 193, wherein the third portion 193 can be used as an anode of the organic light emitting diode layer 195.
  • the organic light emitting diode display device 10 further includes a patterned cathode layer 196 disposed on the organic light emitting diode layer 195 and the pixel definition layer 194, wherein the patterned cathode layer 196 is located on the In the thin film transistor area 101 and the light emitting area 103.
  • the patterned cathode layer 196 is not provided at the position of the capacitor region 102, so that light can freely pass through the capacitor region 12, thereby achieving the effect of increasing the aperture ratio.
  • the organic light-emitting diode layer 195 serves as a cathode and an anode through the patterned cathode layer 196 and the third portion 193, respectively, so that the generated light is emitted toward the substrate 11 (ie, bottom emission).
  • Type OLED organic light-emitting diode
  • the organic light emitting diode display device 10 may further include a buffer layer (not shown) disposed between the substrate 11 and the patterned gate metal layer 12.
  • the material of the buffer layer includes at least one of silicon oxide and silicon nitride.
  • the buffer layer may include one or a combination of a silicon oxide layer and a silicon nitride layer, for example.
  • the thickness of the buffer layer is, for example, between 500 to 5000 ⁇ .
  • FIG. 2 is a schematic flowchart of a method 20 for manufacturing an organic light emitting diode display device according to an embodiment of the present invention.
  • the manufacturing method 20 of the organic light emitting diode display device of the embodiment of the present invention includes steps 21 to: providing a substrate (step 21); forming a patterned gate metal layer on the substrate and located in a thin film transistor area (step 22); forming a gate insulating layer on the patterned gate metal layer and on the substrate in a capacitor area and a light emitting area, wherein the capacitor area is located in the thin film transistor area and the light emitting area Between regions (step 23); forming a patterned light-transmitting semiconductor layer on the gate insulating layer and located in the thin film transistor region and the capacitor region, wherein the thin film transistor region is located in the Pattern the light-transmitting semiconductor layer to form a channel region (step 24); perform a lithography and dry etching step to form a through hole penetrating the gate insulating layer of the thin film transistor region
  • step 21 of the method 20 for manufacturing an organic light emitting diode display device is: providing a substrate 11.
  • the substrate 11 is mainly used to carry the components of the organic light emitting diode display device 10.
  • the substrate 11 is a flexible substrate, a transparent substrate, or a flexible transparent substrate.
  • step 22 of the manufacturing method 20 of the organic light emitting diode display device of the embodiment of the present invention is: forming a patterned gate metal layer 12 on the substrate 11 and located in a thin film transistor area 101 in.
  • the patterned gate metal layer 12 may be formed on the substrate 11 and located in the thin film transistor region 101 by means of photolithography, for example.
  • the material of the patterned gate metal layer 12 includes at least one of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy composition containing the foregoing materials .
  • the thickness of the patterned gate metal layer 12 is, for example, between 2000 and 10000 ⁇ .
  • the manufacturing method before step 21 after providing the substrate and before step 22 of forming the patterned gate metal layer, the manufacturing method further includes the step of forming a buffer layer on the substrate 11 and the Between the patterned gate metal layers 12.
  • the material of the buffer layer includes at least one of silicon oxide and silicon nitride.
  • the buffer layer may include one or a combination of a silicon oxide layer and a silicon nitride layer, for example.
  • the thickness of the buffer layer is, for example, between 500 to 5000 ⁇ .
  • step 23 of the method 20 for manufacturing an organic light emitting diode display device is: forming a gate insulating layer 13 on the patterned gate metal layer 12 and a capacitor Area 192 and a light-emitting area 193 on the substrate 11, wherein the capacitor area 192 is located between the thin film transistor area 191 and the light-emitting area 193.
  • the gate insulating layer 13 may be formed on the patterned gate metal layer 12 and the substrate 11 located in the capacitor region 102 and the light-emitting region 103, for example, by deposition. on.
  • the material of the gate insulating layer 13 includes at least one of silicon oxide and silicon nitride.
  • the gate insulating layer 13 may include one or a combination of a silicon oxide layer and a silicon nitride layer, for example.
  • the thickness of the gate insulating layer 13 is, for example, between 1000 and 5000 ⁇ .
  • step 24 of the manufacturing method 20 of the organic light emitting diode display device of the embodiment of the present invention is: forming a patterned light-transmitting semiconductor layer 241 on the gate insulating layer 13 and located at all In the thin film transistor region 101 and the capacitor region 102, the patterned light-transmitting semiconductor layer 241 located in the thin film transistor region 101 forms a channel region 143.
  • the material of the channel region 143 includes indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), and indium gallium zinc tin oxide (IZTO). gallium zinc tin oxide; IGZTO).
  • the thickness of the channel region 143 is, for example, between 100 and 1000 ⁇ .
  • step 25 of the method 20 for manufacturing an organic light emitting diode display device of the embodiment of the present invention is: performing a photolithography and dry etching step to form a through hole 251 through the thin film transistor region
  • the gate insulating layer 130 of 101 and the patterned light-transmitting semiconductor layer 241 in the capacitor region 102 form a light-transmitting conductor layer 15.
  • the lithography and dry etching steps further include: forming a photoresist layer 252 on the patterned light-transmitting semiconductor layer 241 and the gate insulating layer 13; and patterning the photoresist layer 252, to expose a portion of the gate insulating layer 13 of the thin film transistor region 101 and the patterned light-transmitting semiconductor layer 241 in the capacitor region 102; and perform a dry etching process to bombard the thin film transistor with an ion
  • the portion of the gate insulating layer 13 in the region 101 and the patterned light-transmitting semiconductor layer 241 in the capacitor region 102 form the through hole 251 and the light-transmitting conductor layer 15.
  • the manufacturing method 20 of the organic light emitting diode display device of the embodiment of the present invention uses lithography and dry etching steps to make the patterned light-transmitting semiconductor layers 241 located in different regions form channel regions. 143 and the transparent conductive layer 15.
  • the channel region 143 is not affected by the dry etching step because it is blocked by the photoresist layer 252, and maintains the properties of a semiconductor.
  • the light-transmitting conductor layer 15 is formed by ion bombarding the patterned light-transmitting semiconductor layer 241, so the light-transmitting conductor 15 and the channel region 143 can be formed in the same lithographic etching step. In the formation.
  • step 26 of the manufacturing method 20 of the organic light emitting diode display device of the embodiment of the present invention includes: forming a patterned metal layer 261, wherein the patterned metal layer 261 includes: a source region 141 and a drain region 142 are respectively located on both sides of the patterned metal oxide semiconductor layer 241 in the thin film transistor region 101; and a wire layer 16 is formed in the through hole 251 and is electrically connected to the The patterned gate metal layer 12 and the light-transmitting conductor layer 15 are described.
  • the material of the patterned metal layer 261 includes at least one of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy composition containing the foregoing materials.
  • the thickness of the patterned metal layer 261 is, for example, between 2000 and 10000 ⁇ .
  • the patterned metal layer 261 can be formed by, for example, photolithography.
  • step 27 of the manufacturing method 20 of the organic light emitting diode display device of the embodiment of the present invention includes: covering a passivation layer 17 on the patterned metal layer 261 and the light-transmitting conductor layer 15 on.
  • the material of the passivation layer 17 includes at least one of silicon oxide and silicon nitride.
  • the passivation layer 17 may include one or a combination of a silicon oxide layer and a silicon nitride layer, for example.
  • the thickness of the passivation layer 17 is, for example, between 1000 and 5000 ⁇ .
  • the step 28 of the manufacturing method 20 of the organic light emitting diode display device according to the embodiment of the present invention includes: forming a flat layer 18 on the passivation layer 17.
  • step 29 of the method 20 for manufacturing an organic light emitting diode display device includes: forming a transparent anode layer 19 on the flat layer 18, and the transparent anode layer 19 Including: a first portion 191 penetrates the flat layer 18 and the passivation layer 17 to electrically connect the source region 141; a second portion 192 is located in the capacitor region 102 and is connected to the transparent The light conductor layer 15 forms a light-transmitting capacitor C; and a third part 193 located in the light-emitting area 103.
  • the first portion 191 penetrates the planarization layer 18 and the passivation layer 17 to electrically connect the source region 141.
  • the second portion 192 is located in the capacitor region 102 and forms a transparent capacitor C with the transparent conductor layer 15.
  • the third portion 193 is located in the light-emitting area 103 and serves as an anode of a subsequent component (for example, an organic light-emitting diode layer formed later).
  • the light-transmitting capacitor C of the organic light-emitting diode display device 10 of the embodiment of the present invention has a light-transmitting property, it can prevent light from being blocked, thereby increasing the aperture ratio.
  • the manufacturing method of the organic light emitting diode display device 10 may further include a step of forming other layered structures.
  • the manufacturing method further includes the step of forming a pixel definition layer 194 on the light-transmitting anode layer 19 and the flat layer 18.
  • the pixel definition layer 194 exposes the third portion 193.
  • the pixel defining layer 194 can define the light-emitting area (ie, the third portion 193) of the organic light emitting diode (OLED) layer 195 to be formed later.
  • the manufacturing method further includes the step of forming an organic light emitting diode layer 195 on the third portion 193, wherein the third portion 193 can serve as an organic light emitting diode layer 195.
  • the anode of the diode layer 195 is formed, the manufacturing method 20 further includes the step of forming a patterned cathode layer 196 on the organic light emitting diode layer 195 and the pixel definition layer 194, wherein the The patterned cathode layer 196 is located in the thin film transistor area 101 and the light emitting area 103.
  • the patterned cathode layer 196 is not provided at the position of the capacitor region 102, so that light can freely pass through the capacitor region 12, thereby achieving the effect of increasing the aperture ratio.
  • the organic light-emitting diode layer 195 serves as a cathode and an anode through the patterned cathode layer 196 and the third portion 193, respectively, so that the generated light is emitted toward the substrate 11 (ie, bottom emission).
  • Type OLED Type OLED
  • the manufacturing method of the organic light emitting diode display device of the present invention can be completed without increasing the number of photomasks required in the existing process.
  • the manufactured organic light emitting diode display device has a light-transmitting capacitance, which can improve the aperture ratio of the organic light emitting diode display device.
  • the organic light-emitting diode display device of the present invention adopts a light-transmitting conductor layer and a light-transmitting anode layer to form a light-transmitting capacitor to improve the aperture ratio of the organic light-emitting diode display device.
  • the manufacturing method of the organic light emitting diode display device of the present invention can improve the aperture ratio of the organic light emitting diode display device without increasing the number of masks.

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Abstract

一种有机发光二极管显示装置及其制造方法。该有机发光二极管显示装置（10）是通过采用透光导体层（15）与透光阳极层（19）以形成透光电容（C），以改善有机发光二极管显示装置（10）的开口率。另外，该有机发光二极管显示装置（10）的制造方法可在不增加光罩数的前提下改善有机发光二极管显示装置（10）的开口率。

Description

有机发光二极管显示装置及其制造方法 技术领域
本发明是有关于一种发光二极管显示装置及其制造方法，特别是有关于一种有机发光二极管显示装置及其制造方法。
 背景技术
在平板显示技术中，有机发光二极管（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，逐渐成为继液晶显示器后的第三代显示技术。然而，现有的透明显示OLED面板的开口率仍不足，进而影响了显示效果。
故，有必要提供一种有机发光二极管显示装置及其制造方法，以解决现有技术所存在的问题。
 技术问题
有鉴于此，本发明提供一种有机发光二极管显示装置及其制造方法，以解决现有技术所存在的开口率不足的问题。
 技术解决方案
本发明的一目的在于提供一种有机发光二极管显示装置，其可以改善有机发光二极管显示装置的开口率。
本发明的另一目的在于提供一种有机发光二极管显示装置的制造方法，其可以在不增加光罩数的前提下改善有机发光二极管显示装置的开口率。
为达成本发明的前述目的，本发明一实施例提供一种有机发光二极管显示装置的制造方法，所述制造方法包含步骤：提供一基板；形成一图案化栅极金属层在所述基板上且位在一薄膜晶体管区中；形成一栅极绝缘层在所述图案化栅极金属层及位在一电容区以及一发光区中的所述基板上，其中所述电容区位在所述薄膜晶体管区与所述发光区之间；形成一图案化透光半导体层在所述栅极绝缘层上并且位在所述薄膜晶体管区与所述电容区中，其中位在所述薄膜晶体管区的所述图案化透光半导体层形成一通道区；进行一微影与干蚀刻步骤，以形成一通孔贯通所述薄膜晶体管区的栅极绝缘层，并且以使位在所述电容区中的所述图案化透光半导体层形成一透光导体层，其中所述微影与干蚀刻步骤更包含：形成一光阻层在所述图案化透光半导体层与所述栅极绝缘层上；图案化所述光阻层，以暴露所述薄膜晶体管区的栅极绝缘层的一部分以及所述电容区中的所述图案化透光半导体层；及进行一干蚀刻处理，通过一离子轰击所述薄膜晶体管区的栅极绝缘层的部分以及所述电容区中的所述图案化透光半导体层，以形成所述通孔以及所述透光导体层；形成一图案化金属层，其中所述图案化金属层包含：一源极区与一漏极区，分别位在所述薄膜晶体管区中的图案化金属氧化物半导体层的两侧；及一导线层，形成在所述通孔中并且电性连接所述图案化栅极金属层与所述透光导体层；覆盖一钝化层在所述图案化金属层及所述透光导体层上；形成一平坦层在所述钝化层上；形成一透光阳极层在所述平坦层上，所述透光阳极层包含：一第一部分，贯通所述平坦层与所述钝化层以电性连接所述源极区；一第二部分，位在所述电容区中且与所述透光导体层形成一透光电容；及一第三部分，位在所述发光区中；以及形成一像素定义层在所述透光阳极层与所述平坦层上，其中所述像素定义层暴露所述第三部分。
在本发明的一实施例中，在形成所述像素定义层后，所述制造方法更包含步骤：形成一有机发光二极管层在所述第三部分上。
在本发明的一实施例中，在形成所述有机发光二极管层后，所述制造方法更包含步骤：形成一图案化阴极层在所述有机发光二极管层及所述像素定义层上，其中所述图案化阴极层位在所述薄膜晶体管区与所述发光区中。
在本发明的一实施例中，所述图案化透光半导体层的材质包含铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)及铟镓锌锡氧化物(IGZTO)中的至少一种。
为达成本发明的前述目的，本发明一实施例提供一种有机发光二极管显示装置，其定义有一薄膜晶体管区、一电容区以及一发光区，其中所述电容区位在所述薄膜晶体管区与所述发光区之间。所述有机发光二极管显示装置包含：一基板、一图案化栅极金属层、一栅极绝缘层、一有源层、一透光导体层、一导线层、一钝化层、一平坦层及一透光阳极层。所述图案化栅极金属层设在所述基板上且位在所述薄膜晶体管区中。所述栅极绝缘层设在所述图案化栅极金属层及位在所述电容区以及所述发光区中的所述基板上。所述有源层设在所述栅极绝缘层上且位在所述薄膜晶体管区中，其中所述有源层包含一源极区、一漏极区以及一通道区。所述透光导体层设在所述栅极绝缘层上且位在所述电容区中。所述导线层贯通所述栅极绝缘层以电性连接所述图案化栅极金属层与所述透光导体层。所述钝化层覆盖所述有源层、所述透光导体层及所述导线层。所述平坦层设置在所述钝化层上。所述透光阳极层设置在所述平坦层上并且包含一第一部分、一第二部分及一第三部分。所述第一部分贯通所述平坦层与所述钝化层以电性连接所述源极区。所述第二部分位在所述电容区中且与所述透光导体层形成一透光电容。所述第三部分位在所述发光区中。
在本发明的一实施例中，所述有机发光二极管显示装置更包含一像素定义层，设置在所述透光阳极层与所述平坦层上，其中所述像素定义层暴露所述第三部分。
在本发明的一实施例中，所述有机发光二极管显示装置更包含一有机发光二极管层，设在所述第三部分上。
在本发明的一实施例中，所述有机发光二极管显示装置更包含一图案化阴极层，设置在所述有机发光二极管层及所述像素定义层上，其中所述图案化阴极层位在所述薄膜晶体管区与所述发光区中。
再者，本发明另一实施例提供一种有机发光二极管显示装置的制造方法，所述制造方法包含步骤：提供一基板；形成一图案化栅极金属层在所述基板上且位在一薄膜晶体管区中；形成一栅极绝缘层在所述图案化栅极金属层及位在一电容区以及一发光区中的所述基板上，其中所述电容区位在所述薄膜晶体管区与所述发光区之间；形成一图案化透光半导体层在所述栅极绝缘层上并且位在所述薄膜晶体管区与所述电容区中，其中位在所述薄膜晶体管区的所述图案化透光半导体层形成一通道区；进行一微影与干蚀刻步骤，以形成一通孔贯通所述薄膜晶体管区的栅极绝缘层，并且以使位在所述电容区中的所述图案化透光半导体层形成一透光导体层；形成一图案化金属层，其中所述图案化金属层包含：一源极区与一漏极区，分别位在所述薄膜晶体管区中的图案化金属氧化物半导体层的两侧；及一导线层，形成在所述通孔中并且电性连接所述图案化栅极金属层与所述透光导体层；覆盖一钝化层在所述图案化金属层及所述透光导体层上；形成一平坦层在所述钝化层上；形成一透光阳极层在所述平坦层上，所述透光阳极层包含：一第一部分，贯通所述平坦层与所述钝化层以电性连接所述源极区；一第二部分，位在所述电容区中且与所述透光导体层形成一透光电容；及一第三部分，位在所述发光区中。
在本发明的一实施例中，在形成所述透光阳极层后，所述制造方法更包含步骤：形成一像素定义层在所述透光阳极层与所述平坦层上，其中所述像素定义层暴露所述第三部分。
在本发明的一实施例中，在形成所述像素定义层后，所述制造方法更包含步骤：形成一有机发光二极管层在所述第三部分上。
在本发明的一实施例中，在形成一有机发光二极管层后，所述制造方法更包含步骤：形成一图案化阴极层在所述有机发光二极管层及所述像素定义层上，其中所述图案化阴极层位在所述薄膜晶体管区与所述发光区中。
在本发明的一实施例中，所述微影与干蚀刻步骤更包含：形成一光阻层在所述图案化透光半导体层与所述栅极绝缘层上；图案化所述光阻层，以暴露所述薄膜晶体管区的栅极绝缘层的一部分以及所述电容区中的所述图案化透光半导体层；进行一干蚀刻处理，通过一离子轰击所述薄膜晶体管区的栅极绝缘层的部分以及所述电容区中的所述图案化透光半导体层，以形成所述通孔以及所述透光导体层。
在本发明的一实施例中，所述图案化透光半导体层的材质包含铟镓锌氧化物(indium gallium zinc oxide；IGZO)、铟锌锡氧化物(indium zinc tin oxide；IZTO)及铟镓锌锡氧化物(indium gallium zinc tin oxide；IGZTO)中的至少一种。
 有益效果
与现有技术相比较，本发明的有机发光二极管显示装置，是通过采用透光导体层与透光阳极层以形成透光电容，以改善有机发光二极管显示装置的开口率。另外，本发明的有机发光二极管显示装置的制造方法可在不增加光罩数的前提下改善有机发光二极管显示装置的开口率。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
 附图说明
图1是本发明实施例的有机发光二极管显示装置的剖面示意图。
图2是本发明实施例的有机发光二极管显示装置的制造方法的流程示意图。
图3A至3E是本发明实施例的有机发光二极管显示装置的制造方法的各个制造步骤的剖面示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1，图1是本发明实施例的有机发光二极管显示装置10的剖面示意图。所述有机发光二极管显示装置10定义有一薄膜晶体管区101、一电容区102以及一发光区103，其中所述电容区102位在所述薄膜晶体管区101与所述发光区103之间。所述有机发光二极管显示装置10包含一基板11、一图案化栅极金属层12、一栅极绝缘层13、一有源层14、一透光导体层15、一导线层16、一钝化层17、一平坦层18及一透光阳极层19。所述基板11主要用于承载所述有机发光二极管显示装置10的构件，例如包含所述图案化栅极金属层12、所述栅极绝缘层13、所述有源层14、所述透光导体层15、所述导线层16、所述钝化层17、所述平坦层18及所述透光阳极层19。在一范例中，所述基板11是一柔性基板、一透光基板或者一柔性透光基板。
所述图案化栅极金属层12设在所述基板11上且位在所述薄膜晶体管区101中。在一实施例中，所述图案化栅极金属层12例如可通过微影蚀刻的方式形成在所述基板11上且位在所述薄膜晶体管区101中。在一范例中，所述图案化栅极金属层12的材质包含钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的至少一种，或者是包含上述材质的合金组成。在另一范例中，所述图案化栅极金属层12的厚度例如介于2000至10000Å之间。
所述栅极绝缘层13设在所述图案化栅极金属层12及位在所述电容区102以及所述发光区103中的所述基板11上。在一实施例中，所述栅极绝缘层13例如可通过沉积的方式形成在所述图案化栅极金属层12及位在所述电容区102以及所述发光区103中的所述基板11上。在一范例中，所述栅极绝缘层13的材质包含氧化硅及氮化硅中的至少一种。在另一范例中，所述栅极绝缘层13例如可以包含氧化硅层及氮化硅层中的一种或两种的组合。在又一范例中，所述栅极绝缘层13的厚度例如介于1000至5000Å之间。
所述有源层14设在所述栅极绝缘层13上且位在所述薄膜晶体管区101中，其中所述有源层14包含一源极区141、一漏极区142以及一通道区143。在一实施例中，所述有源层与所述图案化栅极金属层12共同形成薄膜晶体管结构。更具体的，所述有源层与所述图案化栅极金属层12共同形成后通道蚀刻型(back channel etched；BCE)的薄膜晶体管结构。
在一实施例中，所述源极区141与所述漏极区142的材质包含钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的至少一种，或者是包含上述材质的合金组成。在另一范例中，所述源极区141与所述漏极区142的厚度各例如介于2000至10000Å之间。
在一实施例中，所述通道区143的材质包含铟镓锌氧化物(indium gallium zinc oxide；IGZO)、铟锌锡氧化物(indium zinc tin oxide；IZTO)及铟镓锌锡氧化物(indium gallium zinc tin oxide；IGZTO)中的至少一种。在另一实施例中，所述通道区143的厚度例如介于100至1000 Å之间。
所述透光导体层15设在所述栅极绝缘层13上且位在所述电容区102中。在一实施例中，所述透光导体层15的材质包含导体化的铟镓锌氧化物(indium gallium zinc oxide；IGZO)、导体化的铟锌锡氧化物(indium zinc tin oxide；IZTO)及导体化的铟镓锌锡氧化物(indium gallium zinc tin oxide；IGZTO)中的至少一种。这边要提到的是，上述的氧化物在未经过导体化前具有半导体的性质，而在通过导体化的处理后，这些氧化物会形成导体，进而成为后方描述的电容电极的一部分。在一实施例中，所述导体化的处理例如可以在一干蚀刻处理进行(例如使用离子轰击(或等离子体轰击)的方式)。在一实施例中，所述透光导体层15与所述通道区143可通过同一微影蚀刻的步骤(微影与干蚀刻步骤)来形成。
所述导线层16贯通所述栅极绝缘层13以电性连接所述图案化栅极金属层12与所述透光导体层15。所述导线层16的材质包含钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的至少一种，或者是包含上述材质的合金组成。在另一范例中，所述导线层16的厚度各例如介于2000至10000Å之间。在另一实施例中，所述导线层16、所述源极区141与所述漏极区142可通过同一微影蚀刻的步骤来形成。
所述钝化层17覆盖所述有源层14、所述透光导体层15及所述导线层16。在一范例中，所述钝化层17的材质包含氧化硅及氮化硅中的至少一种。在另一范例中，所述钝化层17例如可以包含氧化硅层及氮化硅层中的一种或两种的组合。在又一范例中，所述钝化层17的厚度例如介于1000至5000Å之间。
所述平坦层18设置在所述钝化层17上，以及所述透光阳极层19设置在所述平坦层18上。在一实施例中，所述透光阳极层19的材质例如包含氧化铟锡(ITO)。另外，所述透光阳极层19包含一第一部分191、一第二部分192及一第三部分193。所述第一部分191贯通所述平坦层18与所述钝化层17以电性连接所述源极区141。所述第二部分192位在所述电容区102中且与所述透光导体层15形成一透光电容C。所述第三部分193，位在所述发光区103中，作为后续的构件(例如后续形成的有机发光二极管层)的阳极。
要提到的是，由于本发明实施例的有机发光二极管显示装置10的透光电容C由于具有透光的性质，故可避免光线被遮挡，进而增加开口率。
在一实施例中，所述有机发光二极管显示装置10还可包含其他层状结构。例如，所述有机发光二极管显示装置10更包含一像素定义层194，设置在所述透光阳极层19与所述平坦层18上，其中所述像素定义层194暴露所述第三部分193。所述像素定义层194可定义出后续形成的有机发光二极管(organic light emitting diode；OLED)层195的发光区域(即第三部分193)。在一范例中，所述有机发光二极管显示装置10更包含一有机发光二极管层195，设在所述第三部分193上，其中所述第三部分193可作为有机发光二极管层195的阳极。进一步的，所述有机发光二极管显示装置10更包含一图案化阴极层196，设置在所述有机发光二极管层195及所述像素定义层194上，其中所述图案化阴极层196位在所述薄膜晶体管区101与所述发光区103中。具体而言，所述图案化阴极层196不设在所述电容区102的位置，以使光线可自由穿过所述电容区12，进而达成增加开口率的效果。在一实施例中，所述有机发光二极管层195通过所述图案化阴极层196与所述第三部分193分别作为阴极与阳极，进而使所产生的光线朝所述基板11发射(即底发射型OLED)。
在一实施例中，所述有机发光二极管显示装置10还可包含一缓冲层(未繪示)，设置在所述基板11与所述图案化栅极金属层12之间。在一范例中，所述缓冲层的材质包含氧化硅及氮化硅中的至少一种。在另一范例中，所述缓冲层例如可以包含氧化硅层及氮化硅层中的一种或两种的组合。在又一范例中，所述缓冲层的厚度例如介于500至5000Å之间。
请参照图2，图2是本发明实施例的有机发光二极管显示装置的制造方法20的流程示意图。本发明实施例的有机发光二极管显示装置的制造方法20包含步骤21至：提供一基板(步骤21)；形成一图案化栅极金属层在所述基板上且位在一薄膜晶体管区中(步骤22)；形成一栅极绝缘层在所述图案化栅极金属层及位在一电容区以及一发光区中的所述基板上，其中所述电容区位在所述薄膜晶体管区与所述发光区之间(步骤23)；形成一图案化透光半导体层在所述栅极绝缘层上并且位在所述薄膜晶体管区与所述电容区中，其中位在所述薄膜晶体管区的所述图案化透光半导体层形成一通道区(步骤24)；进行一微影与干蚀刻步骤，以形成一通孔贯通所述薄膜晶体管区的栅极绝缘层，并且以使位在所述电容区中的所述图案化透光半导体层形成一透光导体层(步骤25)；形成一图案化金属层，其中所述图案化金属层包含：一源极区与一漏极区，分别位在所述薄膜晶体管区中的图案化金属氧化物半导体层的两侧；及一导线层，形成在所述通孔中并且电性连接所述图案化栅极金属层与所述透光导体层(步骤26)；覆盖一钝化层在所述图案化金属层及所述透光导体层上(步骤27)；形成一平坦层在所述钝化层上(步骤28)；形成一透光阳极层在所述平坦层上，所述透光阳极层包含：一第一部分，贯通所述平坦层与所述钝化层以电性连接所述源极区；一第二部分，位在所述电容区中且与所述透光导体层形成一透光电容；及一第三部分，位在所述发光区中(步骤29)。
请一并参照图2及3A，本发明实施例的有机发光二极管显示装置的制造方法20的步骤21是：提供一基板11。在一实施例中，所述基板11主要用于承载所述有机发光二极管显示装置10的构件。在一范例中，所述基板11是一柔性基板、一透光基板或者一柔性透光基板。
请一并参照图2及3A，本发明实施例的有机发光二极管显示装置的制造方法20的步骤22是：形成一图案化栅极金属层12在所述基板11上且位在一薄膜晶体管区101中。在一实施例中，所述图案化栅极金属层12例如可通过微影蚀刻的方式形成在所述基板11上且位在所述薄膜晶体管区101中。在一范例中，所述图案化栅极金属层12的材质包含钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的至少一种，或者是包含上述材质的合金组成。在另一范例中，所述图案化栅极金属层12的厚度例如介于2000至10000Å之间。
在一实施例中，在提供所述基板后的步骤21与形成所述图案化栅极金属层的步骤22前，所述制造方法更包含步骤：形成一缓冲层在所述基板11与所述图案化栅极金属层12之间。在一范例中，所述缓冲层的材质包含氧化硅及氮化硅中的至少一种。在另一范例中，所述缓冲层例如可以包含氧化硅层及氮化硅层中的一种或两种的组合。在又一范例中，所述缓冲层的厚度例如介于500至5000Å之间。
请一并参照图2及3A，本发明实施例的有机发光二极管显示装置的制造方法20的步骤23是：形成一栅极绝缘层13在所述图案化栅极金属层12及位在一电容区192以及一发光区193中的所述基板11上，其中所述电容区192位在所述薄膜晶体管区191与所述发光区193之间。在一实施例中，所述栅极绝缘层13例如可通过沉积的方式形成在所述图案化栅极金属层12及位在所述电容区102以及所述发光区103中的所述基板11上。在一范例中，所述栅极绝缘层13的材质包含氧化硅及氮化硅中的至少一种。在另一范例中，所述栅极绝缘层13例如可以包含氧化硅层及氮化硅层中的一种或两种的组合。在又一范例中，所述栅极绝缘层13的厚度例如介于1000至5000Å之间。
请一并参照图2及3A，本发明实施例的有机发光二极管显示装置的制造方法20的步骤24是：形成一图案化透光半导体层241在所述栅极绝缘层13上并且位在所述薄膜晶体管区101与所述电容区102中，其中位在所述薄膜晶体管区101的所述图案化透光半导体层241形成一通道区143。在一实施例中，所述通道区143的材质包含铟镓锌氧化物(indium gallium zinc oxide；IGZO)、铟锌锡氧化物(indium zinc tin oxide；IZTO)及铟镓锌锡氧化物(indium gallium zinc tin oxide；IGZTO)中的至少一种。在另一实施例中，所述通道区143的厚度例如介于100至1000 Å之间。
请一并参照图2、3B与3C，本发明实施例的有机发光二极管显示装置的制造方法20的步骤25是：进行一微影与干蚀刻步骤，以形成一通孔251贯通所述薄膜晶体管区101的栅极绝缘层130，并且以使位在所述电容区102中的所述图案化透光半导体层241形成一透光导体层15。在一实施例中，所述微影与干蚀刻步骤更包含：形成一光阻层252在所述图案化透光半导体层241与所述栅极绝缘层13上；图案化所述光阻层252，以暴露所述薄膜晶体管区101的栅极绝缘层13的一部分以及所述电容区102中的所述图案化透光半导体层241；及进行一干蚀刻处理，通过一离子轰击所述薄膜晶体管区101的栅极绝缘层13的部分以及所述电容区102中的所述图案化透光半导体层241，以形成所述通孔251以及所述透光导体层15。
这边要提到的是，本发明实施例的有机发光二极管显示装置的制造方法20是通过微影与干蚀刻步骤来使位在不同区域的所述图案化透光半导体层241分别形成通道区143与透光导体层15。所述通道区143由于被光阻层252所阻挡而不受干蚀刻步骤的影响，并且保持半导体的性质。另一方面，所述透光导体层15是通过对所述图案化透光半导体层241进行离子轰击的方式形成，故所述透光导体15与所述通道区143可在同一微影蚀刻步骤中形成。
请一并参照图2及3D，本发明实施例的有机发光二极管显示装置的制造方法20的步骤26包含：形成一图案化金属层261，其中所述图案化金属层261包含：一源极区141与一漏极区142，分别位在所述薄膜晶体管区101中的图案化金属氧化物半导体层241的两侧；及一导线层16，形成在所述通孔251中并且电性连接所述图案化栅极金属层12与所述透光导体层15。在一实施例中，所述图案化金属层261的材质包含钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的至少一种，或者是包含上述材质的合金组成。在另一范例中，所述图案化金属层261的厚度例如介于2000至10000Å之间。在另一实施例中，所述图案化金属层261例如可通过微影蚀刻的方式形成。
请一并参照图2及3D，本发明实施例的有机发光二极管显示装置的制造方法20的步骤27包含：覆盖一钝化层17在所述图案化金属层261及所述透光导体层15上。在一范例中，所述钝化层17的材质包含氧化硅及氮化硅中的至少一种。在另一范例中，所述钝化层17例如可以包含氧化硅层及氮化硅层中的一种或两种的组合。在又一范例中，所述钝化层17的厚度例如介于1000至5000Å之间。
请一并参照图2及3D，本发明实施例的有机发光二极管显示装置的制造方法20的步骤28包含：形成一平坦层18在所述钝化层17上。
请一并参照图2及3E，本发明实施例的有机发光二极管显示装置的制造方法20的步骤29包含：形成一透光阳极层19在所述平坦层18上，所述透光阳极层19包含：一第一部分191，贯通所述平坦层18与所述钝化层17以电性连接所述源极区141；一第二部分192，位在所述电容区102中且与所述透光导体层15形成一透光电容C；及一第三部分193，位在所述发光区103中。在本步骤29中，所述第一部分191贯通所述平坦层18与所述钝化层17以电性连接所述源极区141。所述第二部分192位在所述电容区102中且与所述透光导体层15形成一透光电容C。所述第三部分193，位在所述发光区103中，作为后续的构件(例如后续形成的有机发光二极管层)的阳极。
要提到的是，由于本发明实施例的有机发光二极管显示装置10的透光电容C由于具有透光的性质，故可避免光线被遮挡，进而增加开口率。
在一实施例中，所述有机发光二极管显示装置10的制造方法还可包含形成其他层状结构的步骤。例如，请参照图1A与3E，在形成所述透光阳极层19后，所述制造方法更包含步骤：形成一像素定义层194在所述透光阳极层19与所述平坦层18上，其中所述像素定义层194暴露所述第三部分193。所述像素定义层194可定义出后续形成的有机发光二极管(organic light emitting diode；OLED)层195的发光区域(即第三部分193)。在一范例中，在形成所述像素定义层19后，所述制造方法更包含步骤：形成一有机发光二极管层195在所述第三部分193上，其中所述第三部分193可作为有机发光二极管层195的阳极。进一步的，在形成所述有机发光二极管层195后，所述制造方法20更包含步骤：形成一图案化阴极层196在所述有机发光二极管层195及所述像素定义层194上，其中所述图案化阴极层196位在所述薄膜晶体管区101与所述发光区103中。具体而言，所述图案化阴极层196不设在所述电容区102的位置，以使光线可自由穿过所述电容区12，进而达成增加开口率的效果。在一实施例中，所述有机发光二极管层195通过所述图案化阴极层196与所述第三部分193分别作为阴极与阳极，进而使所产生的光线朝所述基板11发射(即底发射型OLED)。
这边要提到的是，本发明的有机发光二极管显示装置的制造方法并未额外增加现有工艺中所需的光罩数即可完成。此外，所制得的有机发光二极管显示装置具有透光电容，可改善有机发光二极管显示装置的开口率。
综上所述，本发明的有机发光二极管显示装置，是通过采用透光导体层与透光阳极层以形成透光电容，以改善有机发光二极管显示装置的开口率。另外，本发明的有机发光二极管显示装置的制造方法可在不增加光罩数的前提下改善有机发光二极管显示装置的开口率。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (14)

  1. 一种有机发光二极管显示装置的制造方法，其中所述制造方法包含步骤：
    提供一基板；
    形成一图案化栅极金属层在所述基板上且位在一薄膜晶体管区中；
    形成一栅极绝缘层在所述图案化栅极金属层及位在一电容区以及一发光区中的所述基板上，其中所述电容区位在所述薄膜晶体管区与所述发光区之间；
    形成一图案化透光半导体层在所述栅极绝缘层上并且位在所述薄膜晶体管区与所述电容区中，其中位在所述薄膜晶体管区的所述图案化透光半导体层形成一通道区；
    进行一微影与干蚀刻步骤，以形成一通孔贯通所述薄膜晶体管区的栅极绝缘层，并且以使位在所述电容区中的所述图案化透光半导体层形成一透光导体层，其中所述微影与干蚀刻步骤更包含：
    形成一光阻层在所述图案化透光半导体层与所述栅极绝缘层上；
    图案化所述光阻层，以暴露所述薄膜晶体管区的栅极绝缘层的一部分以及所述电容区中的所述图案化透光半导体层；及
    进行一干蚀刻处理，通过一离子轰击所述薄膜晶体管区的栅极绝缘层的部分以及所述电容区中的所述图案化透光半导体层，以形成所述通孔以及所述透光导体层；
    形成一图案化金属层，其中所述图案化金属层包含：
    一源极区与一漏极区，分别位在所述薄膜晶体管区中的图案化金属氧化物半导体层的两侧；及
    一导线层，形成在所述通孔中并且电性连接所述图案化栅极金属层与所述透光导体层；
    覆盖一钝化层在所述图案化金属层及所述透光导体层上；
    形成一平坦层在所述钝化层上；
    形成一透光阳极层在所述平坦层上，所述透光阳极层包含：
    一第一部分，贯通所述平坦层与所述钝化层以电性连接所述源极区；
    一第二部分，位在所述电容区中且与所述透光导体层形成一透光电容；及
    一第三部分，位在所述发光区中；以及
    形成一像素定义层在所述透光阳极层与所述平坦层上，其中所述像素定义层暴露所述第三部分。
  2. 如权利要求1所述的有机发光二极管显示装置的制造方法，其中在形成所述像素定义层后，所述制造方法更包含步骤：形成一有机发光二极管层在所述第三部分上。
  3. 如权利要求2所述的有机发光二极管显示装置的制造方法，其中在形成所述有机发光二极管层后，所述制造方法更包含步骤：形成一图案化阴极层在所述有机发光二极管层及所述像素定义层上，其中所述图案化阴极层位在所述薄膜晶体管区与所述发光区中。
  4. 如权利要求1所述的有机发光二极管显示装置的制造方法，其中所述图案化透光半导体层的材质包含铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)及铟镓锌锡氧化物(IGZTO)中的至少一种。
  5. 一种有机发光二极管显示装置，定义有一薄膜晶体管区、一电容区以及一发光区，其中所述电容区位在所述薄膜晶体管区与所述发光区之间，其中所述有机发光二极管显示装置包含：
    一基板；
    一图案化栅极金属层，设在所述基板上且位在所述薄膜晶体管区中；
    一栅极绝缘层，设在所述图案化栅极金属层及位在所述电容区以及所述发光区中的所述基板上；
    一有源层，设在所述栅极绝缘层上且位在所述薄膜晶体管区中，其中所述有源层包含一源极区、一漏极区以及一通道区；
    一透光导体层，设在所述栅极绝缘层上且位在所述电容区中；
    一导线层，贯通所述栅极绝缘层以电性连接所述图案化栅极金属层与所述透光导体层；
    一钝化层，覆盖所述有源层、所述透光导体层及所述导线层；
    一平坦层，设置在所述钝化层上；以及
    一透光阳极层，设置在所述平坦层上并且包含：
    一第一部分，贯通所述平坦层与所述钝化层以电性连接所述源极区；
    一第二部分，位在所述电容区中且与所述透光导体层形成一透光电容；及
    一第三部分，位在所述发光区中。
  6. 如权利要求5所述的有机发光二极管显示装置，更包含一像素定义层，设置在所述透光阳极层与所述平坦层上，其中所述像素定义层暴露所述第三部分。
  7. 如权利要求6所述的有机发光二极管显示装置，更包含一有机发光二极管层，设在所述第三部分上。
  8. 如权利要求7所述的有机发光二极管显示装置，更包含一图案化阴极层，设置在所述有机发光二极管层及所述像素定义层上，其中所述图案化阴极层位在所述薄膜晶体管区与所述发光区中。
  9. 一种有机发光二极管显示装置的制造方法，其中所述制造方法包含步骤：
    提供一基板；
    形成一图案化栅极金属层在所述基板上且位在一薄膜晶体管区中；
    形成一栅极绝缘层在所述图案化栅极金属层及位在一电容区以及一发光区中的所述基板上，其中所述电容区位在所述薄膜晶体管区与所述发光区之间；
    形成一图案化透光半导体层在所述栅极绝缘层上并且位在所述薄膜晶体管区与所述电容区中，其中位在所述薄膜晶体管区的所述图案化透光半导体层形成一通道区；
    进行一微影与干蚀刻步骤，以形成一通孔贯通所述薄膜晶体管区的栅极绝缘层，并且以使位在所述电容区中的所述图案化透光半导体层形成一透光导体层；
    形成一图案化金属层，其中所述图案化金属层包含：
    一源极区与一漏极区，分别位在所述薄膜晶体管区中的图案化金属氧化物半导体层的两侧；及
    一导线层，形成在所述通孔中并且电性连接所述图案化栅极金属层与所述透光导体层；
    覆盖一钝化层在所述图案化金属层及所述透光导体层上；
    形成一平坦层在所述钝化层上；
    形成一透光阳极层在所述平坦层上，所述透光阳极层包含：
    一第一部分，贯通所述平坦层与所述钝化层以电性连接所述源极区；
    一第二部分，位在所述电容区中且与所述透光导体层形成一透光电容；及
    一第三部分，位在所述发光区中。
  10. 如权利要求9所述的有机发光二极管显示装置的制造方法，其中在形成所述透光阳极层后，所述制造方法更包含步骤：形成一像素定义层在所述透光阳极层与所述平坦层上，其中所述像素定义层暴露所述第三部分。
  11. 如权利要求10所述的有机发光二极管显示装置的制造方法，其中在形成所述像素定义层后，所述制造方法更包含步骤：形成一有机发光二极管层在所述第三部分上。
  12. 如权利要求11所述的有机发光二极管显示装置的制造方法，其中在形成所述有机发光二极管层后，所述制造方法更包含步骤：形成一图案化阴极层在所述有机发光二极管层及所述像素定义层上，其中所述图案化阴极层位在所述薄膜晶体管区与所述发光区中。
  13. 如权利要求9所述的有机发光二极管显示装置的制造方法，其中所述微影与干蚀刻步骤更包含：
    形成一光阻层在所述图案化透光半导体层与所述栅极绝缘层上；
    图案化所述光阻层，以暴露所述薄膜晶体管区的栅极绝缘层的一部分以及所述电容区中的所述图案化透光半导体层；及
    进行一干蚀刻处理，通过一离子轰击所述薄膜晶体管区的栅极绝缘层的部分以及所述电容区中的所述图案化透光半导体层，以形成所述通孔以及所述透光导体层。
  14. 如权利要求9所述的有机发光二极管显示装置的制造方法，其中所述图案化透光半导体层的材质包含铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)及铟镓锌锡氧化物(IGZTO)中的至少一种。
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