WO2020196179A1 - Dispositif de formation de film, procédé de formation de film et système de formation de film - Google Patents

Dispositif de formation de film, procédé de formation de film et système de formation de film Download PDF

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Publication number
WO2020196179A1
WO2020196179A1 PCT/JP2020/012073 JP2020012073W WO2020196179A1 WO 2020196179 A1 WO2020196179 A1 WO 2020196179A1 JP 2020012073 W JP2020012073 W JP 2020012073W WO 2020196179 A1 WO2020196179 A1 WO 2020196179A1
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WIPO (PCT)
Prior art keywords
supply
film forming
substrate
film
back surface
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PCT/JP2020/012073
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English (en)
Japanese (ja)
Inventor
敦史 久保
博充 阪上
新藤　健弘
弘弥 似鳥
篤史 遠藤
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東京エレクトロン株式会社
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Publication of WO2020196179A1 publication Critical patent/WO2020196179A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • Various aspects and embodiments of the present disclosure relate to film forming equipment, film forming methods, and film forming systems.
  • the device is formed by forming a plurality of different materials on a substrate, etching the formed materials, and the like. Since the linear expansion coefficient differs between the substrate and the material formed on the substrate, when the substrate returns to room temperature after the film formation, stress may be generated on the substrate, and warpage or cracks may occur. Therefore, in order to reduce the stress applied to the substrate after the element is formed, there is known a technique of forming a film on the back surface of the surface on which the element is formed (see, for example, Patent Document 1 below).
  • the present disclosure provides a film forming apparatus, a film forming method, and a film forming system capable of reducing the man-hours required for film formation in order to reduce the warpage of the substrate.
  • One aspect of the present disclosure is a film forming apparatus, which includes a processing container, a support ring, a film forming section, and a control section.
  • the support ring supports the periphery of the substrate placed in the processing vessel.
  • the film forming section has a plurality of supply ports, and forms a film on the back surface of the substrate by supplying the material gas from each supply port toward the back surface of the surface of the substrate on which the element is formed.
  • the control unit independently controls the supply and stop of the supply of the material gas from each supply port.
  • FIG. 1 is a system configuration diagram showing an example of a semiconductor manufacturing system according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view showing an example of a second film forming apparatus according to the embodiment of the present disclosure.
  • FIG. 3 is a perspective view showing an example of the holding mechanism according to the embodiment of the present disclosure.
  • FIG. 4 is a perspective view showing an example of the film forming mechanism according to the embodiment of the present disclosure.
  • FIG. 5 is a partial cross-sectional view showing an example of the film-forming portion according to the embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram for explaining an example of gas flow in one embodiment of the present disclosure.
  • FIG. 7 is a diagram showing another example of the arrangement of the supply unit.
  • FIG. 1 is a system configuration diagram showing an example of a semiconductor manufacturing system according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view showing an example of a second film forming apparatus according to the embodiment of the present disclosure
  • FIG. 8 is a diagram showing another example of the film forming mechanism.
  • FIG. 9 is a cross-sectional view showing another example of the film-forming portion.
  • FIG. 10 is a diagram showing another example of the film forming mechanism.
  • FIG. 11 is a cross-sectional view showing another example of the film-forming portion.
  • FIG. 12 is a diagram showing another example of the holding mechanism.
  • FIG. 13 is a diagram showing another example of the film-forming portion.
  • FIG. 14 is a diagram showing another example in the moving direction of the film-forming portion.
  • the element is formed by etching the material formed on the substrate into various shapes. Therefore, the stress applied to the substrate after the element is formed has a complicated distribution on the substrate. As a result, the pattern of the film to be formed on the back surface of the substrate in order to cancel the stress having a complicated distribution becomes complicated.
  • a mask material is formed on the back surface of the substrate, and a pattern for canceling stress is formed on the formed mask by photolithography or the like. Then, a film having a shape corresponding to the mask pattern is formed on the back surface of the substrate.
  • a protective film for protecting the element on the surface of the substrate on which the element is formed or after the film formation on the back surface is completed.
  • a step of removing the protective film is also required. As described above, a plurality of steps are required to form a film having a predetermined pattern on the back surface. Therefore, the throughput in the manufacture of the semiconductor device using the substrate is lowered.
  • the present disclosure provides a technique capable of reducing the man-hours required for film formation in order to reduce the warpage of the substrate.
  • FIG. 1 is a system configuration diagram showing an example of the semiconductor manufacturing system 100 according to the embodiment of the present disclosure.
  • the semiconductor manufacturing system 100 includes a first film forming apparatus 200, an etching apparatus 300, a measuring apparatus 400, and a second film forming apparatus 500. These devices are connected to the four side walls of the vacuum transfer chamber 101 having a heptagonal planar shape via a gate valve G, respectively.
  • the semiconductor manufacturing system 100 is a multi-chamber type vacuum processing system, and the inside of the vacuum transfer chamber 101 is exhausted by a vacuum pump to maintain a predetermined degree of vacuum.
  • the semiconductor manufacturing system 100 is an example of a film forming system.
  • the first film forming apparatus 200 forms a conductive film, an insulating film, or the like on a substantially disk-shaped wafer W, which is an example of a substrate.
  • the etching apparatus 300 etches the conductive film or the like formed on the wafer W by the first film forming apparatus 200 into a predetermined pattern by dry etching or the like. By repeating the film formation by the first film forming apparatus 200 and the etching by the etching apparatus 300, an element used for the semiconductor apparatus is formed on the wafer W.
  • the measuring device 400 measures the height distribution of the wafer W on which the element is formed, and outputs the measurement result to the control device 110.
  • the height distribution of the wafer W can be measured using a measuring instrument such as a laser beam displacement meter.
  • a measuring instrument such as a laser beam displacement meter.
  • the wafer W on which the element is formed is mounted on a mounting table in the measuring device 400, and a laser beam displacement meter placed on the ceiling of the measuring device 400 horizontally above the wafer W on the mounting table. While moving, the surface of the wafer W on which the element is formed is irradiated with a laser beam.
  • the laser beam displacement meter can measure the height of the wafer W by measuring the reflected light reflected by the wafer W.
  • the measured height distribution corresponds to information indicating the distortion and warpage of the wafer W. That is, local distortion and warpage occur in the wafer W depending on the presence or absence of the film and the thick and thin portions of the film.
  • the control device 110 is a film forming pattern formed on the back surface of the surface of the wafer W on which the element is formed (hereinafter, simply referred to as the back surface) based on the measurement result measured by the measuring device 400, and is a wafer.
  • the film formation pattern for reducing the distortion and warpage generated in W is calculated.
  • the second film forming apparatus 500 forms a predetermined film on the back surface of the wafer W according to the film forming pattern calculated by the control device 110. As a result, the stress generated on the wafer W by the element formed on one surface of the wafer W is reduced, and the distortion and warpage of the wafer W are reduced.
  • Three load lock chambers 102 are connected to the other three side walls of the vacuum transfer chamber 101 via a gate valve G1.
  • An air transport chamber 103 is provided on the opposite side of the vacuum transport chamber 101 with the load lock chamber 102 in between.
  • Each of the three load lock chambers 102 is connected to the atmospheric transport chamber 103 via a gate valve G2.
  • the load lock chamber 102 controls the pressure between the atmospheric pressure and the vacuum when the wafer W is transported between the atmospheric transport chamber 103 and the vacuum transport chamber 101.
  • a transfer mechanism 106 such as a robot arm is provided in the vacuum transfer chamber 101.
  • the transport mechanism 106 transports the wafer W between the first film forming apparatus 200, the etching apparatus 300, the measuring apparatus 400, the second film forming apparatus 500, and the respective load lock chamber 102.
  • the transport mechanism 106 has two arms 107a and 107b that can move independently.
  • a transport mechanism 108 such as a robot arm is provided in the atmospheric transport chamber 103.
  • the transfer mechanism 108 transfers the wafer W between each carrier C, each load lock chamber 102, and an alignment chamber 104.
  • the semiconductor manufacturing system 100 includes a control device 110 having a memory, a processor, and an input / output interface.
  • the memory stores a program executed by the processor and a recipe including conditions for each process.
  • the processor executes a program read from the memory and controls each part of the semiconductor manufacturing system 100 via the input / output interface based on the recipe stored in the memory.
  • the control device 110 is an example of a control unit and a calculation device.
  • FIG. 2 is a schematic cross-sectional view showing an example of the second film forming apparatus 500 according to the embodiment of the present disclosure.
  • the second film forming apparatus 500 has a bottomed and tubular processing container 10 having a space formed inside. The upper part of the processing container 10 is closed by the lid 11. An opening 13 is provided on the side wall of the processing container 10, and the opening 13 is opened and closed by the gate valve G.
  • One end of the exhaust pipe 15 is connected to the bottom of the processing container 10.
  • the other end of the exhaust pipe 15 is connected to the exhaust device 17 via an APC (Automatic Pressure Controller) valve 16.
  • APC Automatic Pressure Controller
  • a holding mechanism 20 for holding the wafer W in the processing container 10 is provided in the processing container 10.
  • the holding mechanism 20 has a support ring 21, a plurality of support portions 22, and a plurality of drive portions 23. Further, the description will be continued with reference to FIG.
  • FIG. 3 is a perspective view showing an example of the holding mechanism 20 according to the embodiment of the present disclosure.
  • the support ring 21 has a substantially annular shape and supports the peripheral edge of the wafer W from below.
  • the central axis of the support ring 21 is defined as the axis X. Further, for example, as shown in FIG. 3, a part of the support ring 21 is cut so as not to interfere with the arm 107a.
  • Each support portion 22 is fixed to the support ring 21 and supports the support ring 21.
  • the holding mechanism 20 has three support portions 22.
  • Each drive unit 23 is arranged on the lid body 11 and moves the support unit 22 in the vertical direction.
  • the holding mechanism 20 has three support portions 22, and one drive portion 23 moves one support portion 22 in the vertical direction.
  • a plurality of support units 22 may be driven by one drive unit 23.
  • each drive unit 23 lowers the support unit 22. Then, the arm 107a on which the wafer W is placed so that the surface on which the element is formed faces upward enters the position on the support ring 21 so that the central axis of the wafer W and the axis X are aligned with each other. Then, each drive unit 23 raises the support unit 22, so that the wafer W is delivered to the support ring 21. Then, after the arm 107a is retracted from the processing container 10, each drive unit 23 lowers the support portion 22, so that the support ring 21 is lowered along the axis X and the wafer W reaches the position at the time of film formation. Descend.
  • a temperature control unit 12 for controlling the temperature of the wafer W held on the support ring 21 is provided.
  • the temperature control unit 12 is, for example, a heater, a lamp, or the like, and controls the temperature of the wafer W held on the support ring 21 by radiant heat to a temperature suitable for film formation.
  • a film forming mechanism 30 for forming a film according to the film forming pattern calculated by the control device 110 is arranged on the back surface of the wafer W.
  • the film forming mechanism 30 has a film forming section 31, a support section 32, and a driving section 33. Further, the description will be continued with reference to FIGS. 4 and 5.
  • FIG. 4 is a perspective view showing an example of the film forming mechanism 30 according to the embodiment of the present disclosure.
  • FIG. 5 is a partial cross-sectional view showing an example of the film forming portion 31 according to the embodiment of the present disclosure.
  • a plurality of supply units 310-1 to 310-n (n is an integer of 2 or more) are provided on the upper surface of the film forming unit 31.
  • the plurality of supply units 310-1 to 310-n are arranged side by side below the wafer W held by the support ring 21 along the radial direction of the wafer W, that is, the radial direction of the circle centered on the axis X. ing. Further, in the radial direction of the circle centered on the axis X, the length of the region where the plurality of supply units 310-1 to 310-n are arranged is longer than the radius of the wafer W.
  • the supply units 310-1 to 310-n will be referred to as the supply unit 310 when they are generically referred to without distinction.
  • Each supply unit 310 has a first supply port 311, an exhaust port 312, and a second supply port 313, for example, as shown in FIG.
  • the first supply port 311 supplies the first gas used for film formation to the back surface of the wafer W.
  • the exhaust port 312 sucks the gas supplied to the back surface of the wafer W.
  • the second supply port 313 supplies the second gas used for film formation to the back surface of the wafer W.
  • the first gas and the second gas are examples of material gases.
  • the exhaust port 312 is adjacent to the first supply port 311 and the second supply port 313. Further, the first supply port 311 is formed in the film forming portion 31 so as to surround the exhaust port 312.
  • Flow path 316 is formed.
  • One flow path 314 is connected to the first supply port 311 of one supply unit 310 via a supply hole 317.
  • the first gas supplied to the flow path 314 is supplied to the back surface of the wafer W from the first supply port 311 of the corresponding supply unit 310 through the corresponding supply hole 317.
  • one flow path 315 is connected to the exhaust port 312 of one supply unit 310 via the exhaust hole 318.
  • the gas sucked from the exhaust port 312 flows to the corresponding flow path 315 through the corresponding exhaust hole 318 and is exhausted.
  • one flow path 316 is connected to the second supply port 313 of one supply unit 310 via the supply hole 319.
  • the second gas supplied to the flow path 316 is supplied to the back surface of the wafer W from the second supply port 313 of the corresponding supply unit 310 through the corresponding supply hole 319.
  • the supply and suspension of gas supply from the supply unit 310 to the back surface of the wafer W, and the exhaust and exhaust stop of the gas supplied from the supply unit 310 to the back surface of the wafer W are independently controlled by the respective supply units 310.
  • a flow path 320 and a flow path 321 through which a heat medium such as Galden (registered trademark) flows are formed.
  • the temperature of the film forming unit 31 is controlled to a predetermined temperature by circulating the heat medium whose temperature is controlled by a temperature control device (not shown) in the flow path 320 and the flow path 321.
  • a temperature control device not shown
  • FIG. 6 is a schematic diagram for explaining an example of gas flow in one embodiment of the present disclosure.
  • the first gas supplied from the first supply port 311 and the second gas supplied from the second supply port 313 toward the back surface of the wafer W for example, as shown in FIG. Is supplied.
  • the first gas and the second gas supplied to the back surface of the wafer W diffuse along the back surface of the wafer W.
  • the first gas and the second gas are mixed on the back surface of the wafer W to form a predetermined film on the back surface of the wafer W.
  • the first gas and the second gas diffused along the back surface of the wafer W flow into the exhaust port 312 adjacent to the first supply port 311 and the second supply port 313. That is, in each of the supply units 310, the gas supplied from the first supply port 311 and the second supply port 313 to the back surface of the wafer W via the exhaust port 312 is the first supply port 311 and the second supply port 311 and the second. The gas is exhausted in the direction opposite to the direction in which the gas is supplied from the supply port 313 of the above. Therefore, for example, as shown in FIG. 6, a gas flow is generated from the first supply port 311 and the second supply port 313 to the exhaust port 312, and the leakage of gas outside the region of the supply unit 310 is suppressed. Will be done. Therefore, on the back surface of the wafer W, a film can be formed using the first gas and the second gas directly above the supply unit 310.
  • the support portion 32 supports the film forming portion 31.
  • the drive unit 33 rotates the support unit 32 around the shaft X.
  • the drive unit 33 is an example of a rotation mechanism.
  • the film forming portion 31 also rotates about the axis X, for example, as shown in FIG. As a result, the film forming portion 31 moves relatively in the processing container 10 with respect to the wafer W held on the support ring 21.
  • the first gas supply mechanism 50, the second gas supply mechanism 60, and the valve group 70 are connected to the film forming section 31.
  • the first gas supply mechanism 50 has a gas supply source 51, a plurality of MFCs (Mass Flow Controllers) 52-1 to 52-n, and a plurality of valves 53-1 to 53-n.
  • MFCs Mass Flow Controllers
  • valve 53 Describe.
  • One MFC 52 and one valve 53 are provided for one supply unit 310.
  • One end of each valve 53 is connected to a flow path 314 for supplying the first gas to the first supply port 311 of the corresponding supply unit 310 via a pipe.
  • the other end of each valve 53 is connected to the gas supply source 51, which is the first gas supply source, via the corresponding MFC 52.
  • Each MFC 52 controls the flow rate of the first gas supplied from the gas supply source 51, and supplies the flow-controlled first gas to the corresponding flow path 314 via the corresponding valve 53.
  • Each MFC 52 and valve 53 are controlled independently of each other by the control device 110.
  • the second gas supply mechanism 60 has a gas supply source 61, a plurality of MFCs 62-1 to 62-n, and a plurality of valves 63-1 to 63-n.
  • MFC62 a gas supply source
  • valve 63 a plurality of valves 63-1 to 63-n.
  • One MFC 62 and one valve 63 are provided for one supply unit 310.
  • One end of each valve 63 is connected to a flow path 316 for supplying the second gas to the second supply port 313 of the corresponding supply unit 310 via a pipe.
  • the other end of each valve 63 is connected to a gas supply source 61 which is a second gas supply source via a corresponding MFC 62.
  • Each MFC 62 controls the flow rate of the second gas supplied from the gas supply source 61, and supplies the flow-controlled second gas to the corresponding flow path 316 via the corresponding valve 63.
  • Each MFC 62 and valve 63 are controlled independently of each other by the control device 110.
  • the valve group 70 has a plurality of valves 71-1 to 71-n.
  • valves 71-1 to 71-n will be referred to as valves 71 when they are generically referred to without distinction.
  • One valve 71 is provided for one supply unit 310. One end of each valve 71 is connected to a flow path 315 through which the gas sucked from the exhaust port 312 of the corresponding supply unit 310 flows through a pipe. Further, the other end of each valve 71 is connected to the exhaust device 17. Each valve 71 is controlled independently of each other by the control device 110.
  • the gas supply and exhaust to the back surface of the wafer W are individually supplied to the back surface of the wafer W while rotating the film forming section 31 around the axis X. Be controlled.
  • a film having a film formation pattern calculated by the control device 110 is formed on the back surface of the wafer W held on the support ring 21.
  • the lid 11 is formed with a gas introduction port 14 for supplying purge gas into the processing container 10.
  • a purge gas supply mechanism 40 is connected to the gas introduction port 14 via a pipe.
  • the purge gas supply mechanism 40 has a gas supply source 41, an MFC 42, and a valve 43.
  • One end of the valve 43 is connected to the gas introduction port 14 via a pipe.
  • the other end of the valve 43 is connected to the gas supply source 41, which is a supply source of purge gas, via the MFC 42.
  • the purge gas is an inert gas such as helium gas, argon gas, or nitrogen gas.
  • the MFC 42 controls the flow rate of the purge gas supplied from the gas supply source 41 at the time of film formation on the back surface of the wafer W, and the flow-controlled purge gas is supplied into the processing container 10 via the valve 43 and the gas introduction port 14. Supply to.
  • the gas introduction port 14 supplies purge gas to the surface of the wafer W on which the element is formed while the wafer W is supported by the support ring 21.
  • the gas introduction port 14 is an example of a second purge gas supply port.
  • the semiconductor manufacturing system 100 in this embodiment includes a measuring device 400, a control device 110, and a second film forming device 500.
  • the measuring device 400 measures the height distribution of the wafer W.
  • the control device 110 calculates a film formation pattern for reducing the stress applied to the wafer W from the height distribution measured by the measuring device 400.
  • the second film forming apparatus 500 forms a film on the back surface of the surface of the wafer W on which the element is formed according to the film forming pattern calculated by the control device 110.
  • the second film forming apparatus 500 includes a processing container 10, a support ring 21, and a film forming section 31.
  • the support ring 21 supports the peripheral edge of the wafer W arranged in the processing container 10.
  • the film forming unit 31 has a plurality of supply units 310, and forms a film on the back surface of the wafer W by supplying the material gas from each supply unit 310 toward the back surface of the wafer W.
  • the control device 110 independently controls the supply and stop of the supply of the material gas from each supply unit 310. As a result, the man-hours required for film formation for reducing the warpage of the wafer W can be reduced.
  • the film forming unit 31 moves relative to the wafer W in the processing container 10. As a result, a film having an arbitrary pattern can be efficiently formed on the back surface of the wafer W.
  • the wafer W has a substantially disk shape, and the plurality of supply units 310 are arranged below the back surface of the wafer W in the radial direction of the wafer W.
  • the second film forming apparatus 500 includes a driving unit 33 that supports the film forming section 31 and rotates the film forming section 31 around the central axis of the wafer W. As a result, a film having an arbitrary pattern can be efficiently formed on the back surface of the wafer W.
  • each supply unit 310 has a first supply port 311 for supplying the material gas to the back surface of the wafer W, and an exhaust port 312 adjacent to the first supply port 311.
  • the material gas supplied from the first supply port 311 to the back surface of the wafer W is made of material from the first supply port 311 via the exhaust port 312 adjacent to the first supply port 311.
  • the gas is exhausted in the direction opposite to the direction in which the gas is supplied.
  • the material gas supplied from each supply unit 310 is suppressed from entering the region of the other supply unit 310.
  • a film can be formed on the back surface of the wafer W for each region of the supply unit 310.
  • the first supply port 311 is formed in the film forming unit 31 so as to surround the exhaust port 312 adjacent to the first supply port 311.
  • the material gas supplied from each supply unit 310 is suppressed from entering the region of the other supply unit 310.
  • a film can be formed on the back surface of the wafer W for each region of the supply unit 310.
  • the purge gas supply mechanism 40 for supplying the purge gas to the surface of the wafer W on which the element is formed is provided in a state where the wafer W is supported by the support ring 21.
  • the purge gas supply mechanism 40 for supplying the purge gas to the surface of the wafer W on which the element is formed is provided in a state where the wafer W is supported by the support ring 21.
  • the film forming portion 31 is formed with a flow path 320 and a flow path 321 through which a temperature-controlled heat medium flows.
  • a temperature-controlled heat medium flows in the flow path 320 and the flow path 321, it is possible to suppress the deposition of the depot on the film forming portion 31.
  • the plurality of supply units 310 are arranged side by side in a row along the radial direction of the circle centered on the axis X, for example, as shown in FIG.
  • the disclosed technique is not limited to this, and if they are arranged at different positions in the radial direction of the circle centered on the axis X, they may not be arranged side by side in a row.
  • the plurality of supply units 310 may be arranged at positions different from each other by the width L1 of the respective supply units 310 in the radial direction r of the circle centered on the axis X.
  • FIG. 7 is a diagram showing another example of the arrangement of the supply unit 310.
  • each supply unit 310 is arranged at a different position in the radial direction of the circle centered on the axis X, and the total length of the width L1 of each supply unit 310 is a plurality of lengths. It has the same length as the length L2 of the region where the supply unit 310 is arranged.
  • the length L2 may be, for example, the same length as the radius of the wafer W.
  • the plurality of supply portions 310 can be densely arranged in the radial direction of the circle centered on the axis X, and a film formation pattern having a finer shape can be formed on the back surface of the wafer W.
  • the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in a row from the axis X in the radial direction of the circle centered on the axis X. Is not limited to this.
  • the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in the radial direction of the circle centered on the axis X from the axis X, for example, as shown in FIG. 8, a plurality of directions It may be arranged side by side in. As a result, the time required to form the film formation pattern on the back surface of the wafer W can be shortened.
  • FIG. 8 is a diagram showing another example of the film forming mechanism 30.
  • the plurality of supply units 310 may be arranged in the film forming unit 31 so as to be arranged in the diameter direction of the circle centered on the axis X.
  • the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in the radial direction of the circle centered on the axis X and in the direction intersecting each other. You may be.
  • the plurality of supply units 310 are arranged so as to be arranged in two directions from the axis X, and in the example of FIG.
  • the plurality of supply units 310 are arranged from the axis X. They are arranged so as to line up in four directions.
  • the plurality of supply units 310 may be arranged so as to be arranged in three directions from the axis X, or may be arranged so as to be arranged in five or more directions from the axis X.
  • a film having a predetermined pattern is formed on the back surface of the wafer W by supplying the material gas to the back surface of the wafer W, but the disclosed technique is not limited to this.
  • the second gas may be turned into plasma, and a film having a predetermined pattern may be formed on the back surface of the wafer W using the active species contained in the plasma.
  • FIG. 9 is a cross-sectional view showing another example of the film forming portion 31.
  • the electrode 3131 and the electrode 3132 are provided on the inner side wall of the second supply port 313 with the insulating member 3130 interposed therebetween.
  • the electrode 3131 and the electrode 3132 are formed in a plate shape and are arranged on the inner side wall of the second supply port 313 so as to face each other.
  • a high frequency power supply 3133 is electrically connected to the electrode 3131, and the electrode 3132 is grounded.
  • the electrode 3131, the electrode 3132, and the high-frequency power supply 3133 are examples of the plasma generation unit.
  • the film forming section 31 may be provided with a purge gas supply port 330 so as to surround the plurality of supply sections 310, for example, as shown in FIGS. 10 and 11.
  • FIG. 10 is a diagram showing another example of the film forming mechanism 30.
  • FIG. 11 is a cross-sectional view showing another example of the film forming portion 31.
  • the supply port 330 is connected to the flow path 332 through which the purge gas flows through the supply hole 331, for example, as shown in FIG.
  • the purge gas is an inert gas such as helium gas, argon gas, or nitrogen gas.
  • the purge gas supplied into the flow path 332 from a gas supply mechanism (not shown) is supplied to the back surface of the wafer W from the supply port 330 through the supply hole 331.
  • the purge gas supplied to the back surface of the wafer W diffuses along the back surface of the wafer W and is exhausted through the exhaust port 312.
  • the supply port 330 supplies purge gas in the same direction in which gas is supplied from each supply unit 310.
  • the supply port 330 is an example of the first purge gas supply port.
  • a purge gas supply port 330 may be provided so as to surround the plurality of supply sections 310.
  • the film forming section 31 moves with respect to the wafer W, but if the film forming section 31 moves relative to the wafer W in the processing container 10, for example, FIG. 12 shows.
  • the wafer W may be moved so as to be used.
  • FIG. 12 is a diagram showing another example of the holding mechanism 20.
  • the holding mechanism 20 has a support ring 21, a plurality of support portions 26, a pedestal 27, and a drive portion 28.
  • the support ring 21 is fixed to a plurality of support portions 26 and is supported by the plurality of support portions 26.
  • Each support portion 26 is fixed to a pedestal 27.
  • the drive unit 28 rotates the pedestal 27 about the axis X. As the pedestal 27 rotates about the axis X, the wafer W held on the support ring 21 rotates about the axis X together with the support ring 21 supported by the support portion 26.
  • the drive unit 28 is an example of a rotation mechanism. In the example of FIG. 12, the film forming portion 31 does not rotate.
  • the wafer W rotates relative to the film forming section 31, and each of the supply sections 310 of the film forming section 31 can form a film at an arbitrary position on the back surface of the wafer W. Both the wafer W and the film forming portion 31 may rotate in opposite directions.
  • the film forming portion 31 moves relative to the wafer W, but if the film forming can be performed at an arbitrary position on the back surface of the wafer W, the film forming portion is formed with respect to the wafer W. 31 does not have to move relatively.
  • the film forming portion 31 is configured as shown in FIG. 13, for example.
  • FIG. 13 is a diagram showing another example of the film forming portion 31.
  • a plurality of surfaces of the film forming portion 31 facing the back surface of the wafer W which are the same size as the region of the back surface of the wafer W or wider than the region of the back surface of the wafer W.
  • the supply units 310 are densely arranged. By controlling the supply of the material gas from each supply unit 310, the film can be formed at an arbitrary position on the back surface of the wafer W.
  • the film forming portion 31 moves in the direction of rotation relative to the wafer W to form a film at an arbitrary position on the back surface of the wafer W. Not limited to. If the film forming section 31 moves relative to the wafer W, the film forming section 31 may move in another direction with respect to the wafer W.
  • FIG. 14 is a diagram showing another example in the moving direction of the film forming portion 31.
  • the film-forming portion 31 may be moved along the back surface of the wafer W in a direction intersecting the longitudinal direction of the film-forming portion 31.
  • the length of the region of the film forming section 31 in which the plurality of supply sections 310 are arranged is the same as the diameter of the wafer W, or the length of the wafer W. Longer than the diameter.
  • the measuring device 400 measures the height distribution of the wafer W after the element is formed, and the control device 110 calculates the film formation pattern based on the measurement result.
  • Technology is not limited to this. For example, when an element is formed on the wafer W so that the height distribution of the wafer W becomes a preset distribution, the height distribution of the wafer W after the element is formed is measured. It does not have to be. In this case, a film formation pattern corresponding to the preset height distribution is formed on the back surface of the wafer W without measuring the height distribution.
  • a predetermined film formation pattern is formed on the back surface of the wafer W after the element is formed, but the disclosed technique is not limited to this.
  • the height is set in advance before the element is formed on the wafer W.
  • a film forming pattern corresponding to the distribution of the above may be formed on the back surface of the wafer W.
  • the exhaust port 312 is arranged around the second supply port 313 so as to surround the second supply port 313, and around the exhaust port 312 so as to surround the exhaust port 312.
  • the first supply port 311 is arranged in, but the disclosed technology is not limited to this.
  • the first supply port 311 and the exhaust port 312, and the second supply port 313 are formed in a straight line, and the first supply port 311 and the second supply port 313 are laterally sandwiched by the exhaust port 312. They may be arranged side by side.
  • the temperature of the wafer W held on the support ring 21 is controlled by the temperature control unit 12 such as a heater or a lamp arranged on the lower surface of the lid 11, but the disclosed technique is described. Not limited to this.
  • the processing container 10 and the lid 11 are made of quartz or the like, and the processing container 10 and the lid 11 are outside the processing container 10 and the lid 11.
  • a temperature control mechanism for controlling the temperature of the lid may be provided.
  • the processing container 10 and the lid 11 are controlled to predetermined temperatures by the temperature control mechanism, and the temperature of the wafer W held on the support ring 21 is adjusted by the radiant heat from the processing container 10 and the lid 11. Since the radiant heat is applied to the wafer W not only from above the wafer W held on the support ring 21 but also from the surroundings, the temperature of the wafer W can be kept more uniform.

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  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
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  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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Abstract

L'invention concerne un dispositif de formation de film qui est pourvu d'un récipient de traitement, d'un anneau de support, d'une unité de formation de film et d'une unité de commande. L'anneau de support supporte le bord périphérique d'un substrat disposé sur le récipient de traitement. L'unité de formation de film comporte une pluralité d'orifices d'alimentation. L'unité de formation de film apporte un matériau gazeux à partir des orifices d'alimentation vers la surface arrière du substrat par rapport à la surface sur laquelle un élément est formé, et forme ainsi un film sur la surface arrière du substrat. L'unité de commande commande indépendamment l'alimentation en matériau gazeux, et l'arrêt de l'alimentation en matériau gazeux, à partir de chacun des orifices d'alimentation.
PCT/JP2020/012073 2019-03-27 2020-03-18 Dispositif de formation de film, procédé de formation de film et système de formation de film WO2020196179A1 (fr)

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JP2019061825A JP2020158856A (ja) 2019-03-27 2019-03-27 成膜装置、成膜方法、および成膜システム
JP2019-061825 2019-03-27

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Publication number Priority date Publication date Assignee Title
CN116391255A (zh) 2020-09-23 2023-07-04 罗姆股份有限公司 半导体装置、半导体模块、马达驱动装置以及车辆
JP2023096874A (ja) * 2021-12-27 2023-07-07 東京エレクトロン株式会社 基板処理方法および基板処理システム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273029A (ja) * 1994-04-01 1995-10-20 Nippon Steel Corp 化合物半導体基板
JPH0936050A (ja) * 1995-07-25 1997-02-07 Mitsubishi Electric Corp 常圧ｃｖｄ装置
JP2004134631A (ja) * 2002-10-11 2004-04-30 Matsushita Electric Ind Co Ltd ランプ熱処理装置
JP2015525302A (ja) * 2012-06-20 2015-09-03 エムティーエスナノテック株式会社Ｍｔｓ Ｎａｎｏｔｅｃｈ Ｉｎｃ． 原子層蒸着装置及びその方法
KR20180017676A (ko) * 2016-08-10 2018-02-21 주식회사 테스 박막증착장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273029A (ja) * 1994-04-01 1995-10-20 Nippon Steel Corp 化合物半導体基板
JPH0936050A (ja) * 1995-07-25 1997-02-07 Mitsubishi Electric Corp 常圧ｃｖｄ装置
JP2004134631A (ja) * 2002-10-11 2004-04-30 Matsushita Electric Ind Co Ltd ランプ熱処理装置
JP2015525302A (ja) * 2012-06-20 2015-09-03 エムティーエスナノテック株式会社Ｍｔｓ Ｎａｎｏｔｅｃｈ Ｉｎｃ． 原子層蒸着装置及びその方法
KR20180017676A (ko) * 2016-08-10 2018-02-21 주식회사 테스 박막증착장치

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