WO2020186565A1 - Procédé de fabrication de substrat et substrat - Google Patents

Procédé de fabrication de substrat et substrat Download PDF

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Publication number
WO2020186565A1
WO2020186565A1 PCT/CN2019/081574 CN2019081574W WO2020186565A1 WO 2020186565 A1 WO2020186565 A1 WO 2020186565A1 CN 2019081574 W CN2019081574 W CN 2019081574W WO 2020186565 A1 WO2020186565 A1 WO 2020186565A1
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WO
WIPO (PCT)
Prior art keywords
electrode layer
area
black matrix
substrate
display area
Prior art date
Application number
PCT/CN2019/081574
Other languages
English (en)
Chinese (zh)
Inventor
任维
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Publication of WO2020186565A1 publication Critical patent/WO2020186565A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells

Definitions

  • the present invention relates to the field of display technology, in particular to a method for manufacturing a substrate and a substrate.
  • TFT Thin Film Transistor
  • LCD Liquid Crystal Display
  • AMOLED Active Matrix Organic Light-Emitting Diode
  • liquid crystal displays which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is based on the thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate) and the color filter (Color Filter, CF)
  • the liquid crystal molecules are filled between the substrates, and the pixel voltage and the common voltage are applied to the two substrates.
  • the electric field formed between the pixel voltage and the common voltage controls the rotation direction of the liquid crystal molecules to reduce the backlight module
  • the light is transmitted out to produce a picture.
  • the liquid crystal display panel molding process generally includes: the front-end array (film, yellow light, etching and stripping), the middle-stage cell process (the TFT substrate is bonded to the CF substrate), and the back-end module assembly process (The driver IC is pressed against the printed circuit board).
  • the front Array process is mainly to form TFT substrates to control the movement of liquid crystal molecules
  • the middle Cell process is mainly to add liquid crystal between the TFT substrate and the CF substrate
  • the back module assembly process is mainly to drive IC pressing and printed circuits
  • the integration of the board drives the rotation of the liquid crystal molecules to display images.
  • PI polyimide
  • the design of the dummy area on the CF substrate is uniform and the topography is flat, which is different from the design of the display (AA) area.
  • the film structure pattern of the AA area is complicated, resulting in uneven PI distribution in the dummy area and the AA area.
  • the PI of the dummy area and the AA area will have a difference in the pretilt angle formed by the liquid crystal, which will affect the display quality.
  • the object of the present invention is to provide a method for manufacturing a substrate, which can improve the uniformity of the film thickness of the alignment film.
  • the object of the present invention is also to provide a substrate with good film thickness uniformity of the alignment film.
  • the present invention provides a method for manufacturing a substrate, which includes the following steps:
  • Step S1 Provide a base substrate, and form a ring of sealant on the base substrate;
  • the base substrate includes a display area and a dummy area between the display area and the sealant;
  • Step S2 forming a black matrix located in the display area and the dummy area on the base substrate; forming an electrode layer on the black matrix;
  • Step S3 etching the black matrix and the electrode layer in the dummy area to form at least one groove penetrating the black matrix and the electrode layer;
  • Step S4 coating an alignment film solution on the electrode layer and the base substrate to form an alignment film covering the electrode layer and the groove.
  • the specific steps of the step S2 are: forming a black matrix material layer located in the display area and the dummy area on the base substrate, and patterning the black matrix material layer located in the display area through a photomask Processing to get the black matrix.
  • a laser is used to etch the black matrix and the electrode layer in the dummy area to obtain at least one groove penetrating the black matrix and the electrode layer.
  • step S3 before the laser is etched, scribing is performed on the black matrix and the electrode layer in the virtual area to form at least one etching line, and the laser is located in the virtual area along the etching line.
  • the black matrix and electrode layer are etched.
  • the line width of the etching line is 50-70um.
  • the area where the electrode layer located in the display area is located, and the area where the portion of the electrode layer located in the dummy area is connected to the electrode layer located in the display area are both high voltage areas;
  • the area of the electrode layer located in the dummy area that is not connected to the electrode layer located in the display area is a low-voltage area.
  • the width of the groove is 50-70um.
  • the present invention also provides a substrate, including: a base substrate, a sealant arranged on the base substrate, a black matrix arranged on the base substrate and surrounded by the sealant, and a black matrix arranged on the black An electrode layer on the matrix and an alignment film provided on the electrode layer;
  • the base substrate includes a display area and a dummy area between the display area and the sealant; the substrate has at least one groove penetrating the black matrix and the electrode layer in the dummy area; the alignment The film covers the electrode layer and the groove.
  • the area where the electrode layer located in the display area is located, and the area where the portion of the electrode layer located in the dummy area is connected to the electrode layer located in the display area are both high voltage areas;
  • the area of the electrode layer located in the dummy area that is not connected to the electrode layer located in the display area is a low-voltage area.
  • the width of the groove is 50-70um.
  • the method for manufacturing the substrate of the present invention is to form at least one groove penetrating the black matrix and the electrode layer by etching the black matrix and the electrode layer located in the virtual area, and then in the electrode layer and the substrate
  • the alignment film solution is coated on the substrate, since the topography of the film structure in the virtual area is similar to that of the display area, it can be ensured that the thickness of the alignment film in the display area is the same as that of the virtual area.
  • the thickness of the alignment film tends to be the same, thereby improving the uniformity of the film thickness of the alignment film.
  • the thickness of the alignment film of the substrate in the display area of the present invention is approximately the same as the thickness of the alignment film of the dummy area, and the film thickness of the alignment film is uniform.
  • Figure 1 is a flow chart of the method for manufacturing a substrate of the present invention
  • 3 to 5 are schematic diagrams of step S2 of the manufacturing method of the substrate of the present invention.
  • FIGS 6 to 7 are schematic diagrams of step S3 of the manufacturing method of the substrate of the present invention.
  • FIG. 8 is a schematic diagram of step S4 of the manufacturing method of the substrate of the present invention and a schematic diagram of the substrate of the present invention.
  • the present invention provides a method for manufacturing a substrate, including the following steps:
  • step S1 Please refer to the figure 2 ,Provide the base plate 10 , On the base substrate 10 Frame glue 20 ;
  • the base substrate 10 Including display area 11 And in the display area 11 With box glue 20 Virtual zone 12 ;
  • step S2 Please refer to the figure 3 To map 5 , On the base substrate 10 On the display area 11 Virtual zone 12 Black matrix 30 ; In the black matrix 30 Electrode layer 40 ;
  • step S3 Please refer to the figure 6 To map 7 , On the virtual area 12 Black matrix 30 And electrode layer 40 Perform etching to form at least one penetrating black matrix 30 And electrode layer 40 Groove 41 ;
  • step S4 Please refer to the figure 8 , In the electrode layer 40 And substrate 10 Coat the alignment film solution to form a covering electrode layer 40 And groove 41 Alignment film 50 .
  • the present invention will be located in the virtual area 12 Black matrix 30 And electrode layer 40 Perform etching to form at least one penetrating black matrix 30 And electrode layer 40 Groove 41 , And then in the electrode layer 40 And substrate 10
  • the alignment film solution is applied, it is located in the virtual area 12 Topography and display area of the film structure 12
  • the topography of the film structure is similar, which can be guaranteed to be located in the display area 11
  • Alignment film 50 The thickness of the virtual area 12 Alignment film 50 The thickness tends to be the same, thereby increasing the alignment film 50 The film thickness uniformity.
  • the steps S2 The specific steps are: on the base substrate 10 On the display area 11 Virtual zone 12 Black matrix material layer in 30 ’, located in the display area through the mask pair 11 Black matrix material layer in 30 ’Patternization process to get black matrix 30 . At this time, in the virtual area 12 Black matrix 30 The terrain is flat.
  • the steps S3 Since the laser can not only affect the electrode layer 40 For etching, but also for the black matrix 30 To etch, so the laser is used to locate the virtual area 12 Black matrix 30 And electrode layer 40 Perform etching and change virtual area 12 Black matrix 30 Terrain, making it more complicated, and the display area 12 Black matrix 30 The terrain is similar.
  • the etching line 42 The line width is 50-70um .
  • Electrode layer 40 The area, and the virtual area 12 Electrode layer 40 In the display area 11 Electrode layer 40
  • the area where the connected part is located is divided into high voltage areas, which will be located in the virtual area 12 Electrode layer 40 In the display area 11 Electrode layer 40
  • the area where the connected part is located is divided into a low voltage area, and then the electrode layer of the high voltage area 40 Apply high voltage to the electrode layer in the low voltage area 40 Apply low voltage to complete the alignment film 50 ⁇ Alignment.
  • the electrode layer 40 The material is ITO (Indium Tin Oxide).
  • the groove 41 The width is 50-70um .
  • the alignment film 50 The material is PI .
  • the groove 41 The quantity can be based on the actual product PI Solution leveling needs to be set.
  • the present invention also provides a substrate, including: a base substrate 10 , Located on the base substrate 10 Box glue 20 , Located on the base substrate 10 Frame glue 20 Black matrix 30 , Located in the black matrix 30 Upper electrode layer 40 And on the electrode layer 40 Alignment film 50 ;
  • the base substrate 10 Including display area 11 And in the display area 11 With box glue 20 Virtual zone 12 ;
  • the substrate has at least one through the virtual area 12 Black matrix 30 And electrode layer 40 Groove 41 ;
  • the alignment film 50 Cover the electrode layer 40 And groove 41 .
  • the substrate of the present invention has at least one penetrating portion located in the virtual area 12 Black matrix 30 And electrode layer 40 Groove 41 , Make it located in the virtual area 12 Topography and display area of the film structure 12
  • the topography of the film structure is similar, which can be guaranteed to be located in the display area 11
  • Alignment film 50 The thickness of the virtual area 12 Alignment film 50 The thickness tends to be the same, thereby increasing the alignment film 50 The film thickness uniformity.
  • the black matrix 30 The forming method is: on the base substrate 10 On the display area 11 Virtual zone 12 Black matrix material layer in 30 ’, located in the display area through the mask pair 11 Black matrix material layer in 30 ’Patternization process to get black matrix 30 . At this time, in the virtual area 12 Black matrix 30 The terrain is flat.
  • the groove 41 The forming method is: because the laser can not only affect the electrode layer 40 For etching, but also for the black matrix 30 To etch, so the laser is used to locate the virtual area 12 Black matrix 30 And electrode layer 40 Perform etching and change virtual area 12 Black matrix 30 Terrain, making it more complicated, and the display area 12 Black matrix 30 The terrain is similar.
  • the laser is etched, it is located in the virtual area 12 Black matrix 30 And electrode layer 40 Scribe on the top to form at least one etching line 42 , The laser is along the etching line 42 In the virtual area 12 Black matrix 30 And electrode layer 40 Perform etching.
  • the etching line 42 The line width is 50-70um .
  • Electrode layer 40 The area, and the virtual area 12 Electrode layer 40 In the display area 11 Electrode layer 40
  • the area where the connected part is located is divided into high voltage areas, which will be located in the virtual area 12 Electrode layer 40 In the display area 11 Electrode layer 40
  • the area where the connected part is located is divided into a low voltage area, and then the electrode layer of the high voltage area 40 Apply high voltage to the electrode layer in the low voltage area 40 Apply low voltage to complete the alignment film 50 ⁇ Alignment.
  • the electrode layer 40 The material is ITO (Indium Tin Oxide).
  • the groove 41 The width is 50-70um .
  • the alignment film 50 The material is PI .
  • the groove 41 The quantity can be based on the actual product PI Solution leveling needs to be set.
  • the manufacturing method of the substrate of the present invention etches the black matrix and the electrode layer located in the virtual area to form at least one groove penetrating the black matrix and the electrode layer, and subsequently in the electrode layer and the base substrate
  • the alignment film solution is applied on the topography
  • the thickness of the alignment film in the display area and the alignment of the virtual area can be guaranteed
  • the thickness of the film tends to be the same, thereby improving the uniformity of the film thickness of the alignment film.
  • the thickness of the alignment film of the substrate in the display area of the present invention is approximately the same as the thickness of the alignment film of the dummy area, and the film thickness of the alignment film is uniform.

Abstract

L'invention concerne un procédé de fabrication de substrat et un substrat. Selon le procédé de fabrication du substrat, au moyen d'une gravure d'une matrice noire (30) et d'une couche d'électrode (40) située dans une zone fictive (12), au moins une rainure (41) pénétrant à travers la matrice noire (30) et la couche d'électrode (40) est formée ; puis, lorsqu'une solution de film d'alignement est appliquée à la couche d'électrode (40) et à un substrat de base (10), étant donné que le terrain d'une structure de couche de film située dans la zone factice (12) est similaire au terrain d'une structure de couche de film dans une zone active (11), il peut être garanti que l'épaisseur d'un film d'alignement (50) située dans la zone active (11) tend à être la même que l'épaisseur du film d'alignement (50) dans la zone factice (12), ce qui permet d'améliorer l'uniformité d'épaisseur de film de films d'alignement (50). Selon le substrat (10), l'épaisseur du film d'alignement (50) situé dans la zone active (11) tend à être identique à l'épaisseur du film d'alignement (50) dans la zone fictive (12) ; par conséquent, l'uniformité d'épaisseur de film de films d'alignement (50) est bonne.
PCT/CN2019/081574 2019-03-21 2019-04-04 Procédé de fabrication de substrat et substrat WO2020186565A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910219080.2 2019-03-21
CN201910219080.2A CN109765719A (zh) 2019-03-21 2019-03-21 基板的制作方法及基板

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WO2020186565A1 true WO2020186565A1 (fr) 2020-09-24

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WO (1) WO2020186565A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110316971B (zh) * 2019-07-03 2021-09-24 Tcl华星光电技术有限公司 蚀刻混切玻璃基板的方法
CN113540308B (zh) * 2020-04-22 2023-06-09 东莞市中麒光电技术有限公司 Led显示模组的基板结构及制作方法
CN113589594B (zh) * 2021-07-19 2022-07-12 Tcl华星光电技术有限公司 显示面板及其制备方法
CN114442381A (zh) * 2022-03-07 2022-05-06 苏州华星光电技术有限公司 一种显示面板及显示装置

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US20070279565A1 (en) * 2006-05-31 2007-12-06 Hitachi Displays, Ltd. Liquid crystal display device
CN102799029A (zh) * 2012-08-22 2012-11-28 京东方科技集团股份有限公司 液晶显示基板和液晶显示装置
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CN105549269A (zh) * 2016-02-18 2016-05-04 深圳市华星光电技术有限公司 配向膜厚度均一性的优化方法及液晶显示面板
CN106773340A (zh) * 2016-12-26 2017-05-31 友达光电股份有限公司 显示面板

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CN104950508B (zh) * 2015-06-17 2019-03-26 深圳市华星光电技术有限公司 液晶显示面板
KR20170038964A (ko) * 2015-09-30 2017-04-10 삼성디스플레이 주식회사 표시 패널 및 그의 제조 방법
CN106647053B (zh) * 2016-11-11 2020-02-07 惠科股份有限公司 一种液晶显示屏及其制作方法
CN107991804A (zh) * 2018-01-29 2018-05-04 武汉华星光电技术有限公司 液晶显示面板

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Publication number Priority date Publication date Assignee Title
US20070279565A1 (en) * 2006-05-31 2007-12-06 Hitachi Displays, Ltd. Liquid crystal display device
CN102799029A (zh) * 2012-08-22 2012-11-28 京东方科技集团股份有限公司 液晶显示基板和液晶显示装置
CN103033992A (zh) * 2012-12-21 2013-04-10 京东方科技集团股份有限公司 液晶显示基板及其制备方法、液晶显示装置
CN105549269A (zh) * 2016-02-18 2016-05-04 深圳市华星光电技术有限公司 配向膜厚度均一性的优化方法及液晶显示面板
CN106773340A (zh) * 2016-12-26 2017-05-31 友达光电股份有限公司 显示面板

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