WO2020180338A1 - Procédé de fabrication de dispositifs mosfet à tranchée de grille blindée - Google Patents
Procédé de fabrication de dispositifs mosfet à tranchée de grille blindée Download PDFInfo
- Publication number
- WO2020180338A1 WO2020180338A1 PCT/US2019/032757 US2019032757W WO2020180338A1 WO 2020180338 A1 WO2020180338 A1 WO 2020180338A1 US 2019032757 W US2019032757 W US 2019032757W WO 2020180338 A1 WO2020180338 A1 WO 2020180338A1
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- WO
- WIPO (PCT)
- Prior art keywords
- layer
- oxide layer
- gate
- trench
- forming
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 177
- 229920005591 polysilicon Polymers 0.000 claims abstract description 168
- 238000000034 method Methods 0.000 claims abstract description 101
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 39
- 239000002019 doping agent Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 16
- 210000000746 body region Anatomy 0.000 claims description 10
- 230000001965 increasing effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 230000000155 isotopic effect Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 10
- 238000002161 passivation Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- -1 BF2 ions Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
L'invention concerne une structure de dispositif MOSFET à tranchée de grille blindée. La structure de dispositif comprend des tranchées de grille MOS et des tranchées de contact de corps p formées dans une couche de silicium épitaxial de type n recouvrant un substrat de silicium n +. Chaque tranchée de grille MOS comprend un empilement de tranchée de grille ayant une couche de polysilicium de blindage n + inférieure séparée d'une couche de polysilicium de grille n + supérieure par une couche d'oxyde de polysilicium (IPO). La couche IPO peut être formée soit par dépôt d'une couche d'oxyde de silicium soit par croissance thermique d'une couche d'oxyde de polysilicium avec une variation d'épaisseur minimale. Le procédé est utilisé pour former à la fois des tranchées de grille MOS et des tranchées de contact de corps p dans une fabrication de dispositif MOSFET à tranchée de grille blindée auto-alignée ou non alignée.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201980093293.3A CN113519054B (zh) | 2019-03-01 | 2019-05-16 | 制造屏蔽栅极沟槽mosfet装置的方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/290,834 US10998438B2 (en) | 2018-03-01 | 2019-03-01 | Self-aligned trench MOSFET structures and methods |
| US16/290,834 | 2019-03-01 | ||
| US16/414,769 | 2019-05-16 | ||
| US16/414,769 US10777661B2 (en) | 2018-03-01 | 2019-05-16 | Method of manufacturing shielded gate trench MOSFET devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020180338A1 true WO2020180338A1 (fr) | 2020-09-10 |
Family
ID=72338282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2019/032757 WO2020180338A1 (fr) | 2019-03-01 | 2019-05-16 | Procédé de fabrication de dispositifs mosfet à tranchée de grille blindée |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113519054B (fr) |
| WO (1) | WO2020180338A1 (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635567A (zh) * | 2020-12-29 | 2021-04-09 | 上海昱率科技有限公司 | 功率mosfet及其制造方法和电子设备 |
| CN113013027A (zh) * | 2021-03-24 | 2021-06-22 | 上海华虹宏力半导体制造有限公司 | 栅间氧化层的形成方法和屏蔽栅沟槽型器件的形成方法 |
| CN113013028A (zh) * | 2021-03-24 | 2021-06-22 | 上海华虹宏力半导体制造有限公司 | 栅间氧化层的形成方法和屏蔽栅沟槽型器件的形成方法 |
| US11469313B2 (en) | 2020-01-16 | 2022-10-11 | Ipower Semiconductor | Self-aligned trench MOSFET and IGBT structures and methods of fabrication |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220069073A1 (en) * | 2020-08-28 | 2022-03-03 | Nanjing Zizhu Microelectronics Co., Ltd. | Integrated circuit system with super junction transistor mechanism and method of manufacture thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5219777A (en) * | 1991-06-14 | 1993-06-15 | Gold Star Electron Co., Ltd. | Metal oxide semiconductor field effect transistor and method of making the same |
| US8816431B2 (en) * | 2012-03-09 | 2014-08-26 | Fairchild Semiconductor Corporation | Shielded gate MOSFET device with a funnel-shaped trench |
| US8847310B1 (en) * | 2012-07-31 | 2014-09-30 | Azure Silicon LLC | Power device integration on a common substrate |
| US9224853B2 (en) * | 2007-12-26 | 2015-12-29 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
| US6809368B2 (en) * | 2001-04-11 | 2004-10-26 | International Business Machines Corporation | TTO nitride liner for improved collar protection and TTO reliability |
| US6744089B2 (en) * | 2002-09-09 | 2004-06-01 | Intelligent Sources Development Corp. | Self-aligned lateral-transistor DRAM cell structure |
| AT504289A2 (de) * | 2005-05-26 | 2008-04-15 | Fairchild Semiconductor | Trench-gate-feldeffekttransistoren und verfahren zum bilden derselben |
| EP1742257B1 (fr) * | 2005-07-08 | 2012-09-05 | STMicroelectronics Srl | Méthode de fabrication d'un dispositif semi-conducteur de puissance |
| US9947770B2 (en) * | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
| JP2009088198A (ja) * | 2007-09-28 | 2009-04-23 | Rohm Co Ltd | 半導体装置 |
| US7872305B2 (en) * | 2008-06-26 | 2011-01-18 | Fairchild Semiconductor Corporation | Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein |
| US7936009B2 (en) * | 2008-07-09 | 2011-05-03 | Fairchild Semiconductor Corporation | Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein |
| US8581341B2 (en) * | 2010-04-20 | 2013-11-12 | Maxpower Semiconductor, Inc. | Power MOSFET with embedded recessed field plate and methods of fabrication |
| CN103904119B (zh) * | 2014-03-28 | 2016-08-17 | 北京中科新微特科技开发股份有限公司 | 一种具有纵向屏蔽栅的Trench MOSFET及其加工方法 |
| US9269779B2 (en) * | 2014-07-21 | 2016-02-23 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having a shield electrode structure |
| US9484452B2 (en) * | 2014-12-10 | 2016-11-01 | Alpha And Omega Semiconductor Incorporated | Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs |
-
2019
- 2019-05-16 CN CN201980093293.3A patent/CN113519054B/zh active Active
- 2019-05-16 WO PCT/US2019/032757 patent/WO2020180338A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5219777A (en) * | 1991-06-14 | 1993-06-15 | Gold Star Electron Co., Ltd. | Metal oxide semiconductor field effect transistor and method of making the same |
| US9224853B2 (en) * | 2007-12-26 | 2015-12-29 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
| US8816431B2 (en) * | 2012-03-09 | 2014-08-26 | Fairchild Semiconductor Corporation | Shielded gate MOSFET device with a funnel-shaped trench |
| US8847310B1 (en) * | 2012-07-31 | 2014-09-30 | Azure Silicon LLC | Power device integration on a common substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11469313B2 (en) | 2020-01-16 | 2022-10-11 | Ipower Semiconductor | Self-aligned trench MOSFET and IGBT structures and methods of fabrication |
| CN112635567A (zh) * | 2020-12-29 | 2021-04-09 | 上海昱率科技有限公司 | 功率mosfet及其制造方法和电子设备 |
| CN112635567B (zh) * | 2020-12-29 | 2024-03-19 | 苏州迈志微半导体有限公司 | 功率mosfet及其制造方法和电子设备 |
| CN113013027A (zh) * | 2021-03-24 | 2021-06-22 | 上海华虹宏力半导体制造有限公司 | 栅间氧化层的形成方法和屏蔽栅沟槽型器件的形成方法 |
| CN113013028A (zh) * | 2021-03-24 | 2021-06-22 | 上海华虹宏力半导体制造有限公司 | 栅间氧化层的形成方法和屏蔽栅沟槽型器件的形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113519054B (zh) | 2024-03-26 |
| CN113519054A (zh) | 2021-10-19 |
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