WO2020177557A1 - Emballage pour dispositif mems dont le trou de libération est disposé dans un espace d'emballage - Google Patents

Emballage pour dispositif mems dont le trou de libération est disposé dans un espace d'emballage Download PDF

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Publication number
WO2020177557A1
WO2020177557A1 PCT/CN2020/076207 CN2020076207W WO2020177557A1 WO 2020177557 A1 WO2020177557 A1 WO 2020177557A1 CN 2020076207 W CN2020076207 W CN 2020076207W WO 2020177557 A1 WO2020177557 A1 WO 2020177557A1
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WIPO (PCT)
Prior art keywords
release hole
packaging
mems device
film
resonator
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PCT/CN2020/076207
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English (en)
Chinese (zh)
Inventor
张孟伦
庞慰
杨清瑞
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天津大学
诺思(天津)微系统有限责任公司
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Publication of WO2020177557A1 publication Critical patent/WO2020177557A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, in particular to a MEMS device assembly, an electronic device having the MEMS device assembly, an electronic device having the MEMS device assembly or the electronic device, and a MEMS device package method.
  • FBAR film bulk acoustic resonator
  • the thin-film bulk acoustic wave bandpass filter is based on a high-Q resonator.
  • the thin-film bulk acoustic wave resonator uses the thickness extension mode of a piezoelectric aluminum nitride (AlN) film.
  • AlN piezoelectric aluminum nitride
  • Silicon reverse etching type This bulk silicon micro-manufacturing process is used to etch and remove most of the silicon material from the reverse side of the silicon wafer to form an air interface on the lower surface of the piezoelectric oscillatory stack, thereby confining sound waves within the piezoelectric oscillatory stack. Because the large area of silicon substrate is removed, it will inevitably affect the mechanical fastness of the device and greatly reduce the yield.
  • Air gap type The surface micro-manufacturing process used forms an air gap on the upper surface of the silicon wafer to limit the sound waves in the piezoelectric oscillator stack.
  • the air gap may be a sinking type formed by removing part of the surface of the silicon wafer, or it may be an upward convex shape formed directly on the silicon surface without removing the silicon.
  • This type of FBAR can not only confine the sound wave within the piezoelectric oscillator stack, and obtain a high Q value.
  • the surface micro-manufacturing process it is not necessary to remove most of the silicon substrate, so it is compatible with the silicon wafer.
  • the mechanical fastness is much better; in addition, there is no need to process the reverse side of the silicon substrate so that this method can be compatible with the traditional silicon integrated circuit process and has the possibility of integration.
  • SMR Solidly mounted resonator
  • the Bragg reflector generally uses W and SiO 2 as the high and low impedance acoustic layer, because the acoustic impedance between W and SiO 2 is relatively different.
  • W and SiO 2 are materials in the standard CMOS process. Its biggest advantage is that it has strong mechanical fastness, good integration, and does not need to use technology, which makes it easy for many semiconductor factories that do not have technology to join in.
  • Figures 1 and 2 are respectively a top view of a typical air gap type FBAR and a cross-sectional view taken along A-A in the top view.
  • 10 is the air gap structure of the resonator
  • 11 is the release hole of the air gap
  • 12 is the bottom electrode of the resonator
  • 13 is the piezoelectric layer of the resonator
  • 14 is the top electrode of the resonator.
  • film bulk acoustic resonators have specific packaging requirements under different application environments.
  • certain BAW resonators can work optimally in specific environmental conditions, such as a specific range of humidity or pressure or in an inert gas.
  • certain bulk acoustic wave resonators may be sensitive to certain pollution.
  • 3A-3E show the thin film packaging process of the resonator in the prior art. as the picture shows:
  • the known thin film packaging process is as follows:
  • a packaging film 31 is formed above the sacrificial layer, as shown in FIG. 3C;
  • a sealing layer 35 is formed on the packaging film 31 to seal the opening 32 in the packaging film 31, thereby sealing the packaging cavity 33, as shown in FIG. 3E.
  • the position of the opening 32 is located in the middle of the film 31, so that the liquid medicine enters the packaging.
  • the distance into the air gap 10 through the release hole 11 becomes longer, as shown by the arrow in FIG. 3D. Therefore, chemical residues and the like generated during the release of the sacrificial layer 30 are likely to stay in the air gap 10, resulting in deterioration of the performance of the resonator.
  • the air gap type FBAR there will be a step 34 in the packaging film 34 formed on the release hole 11 of the air gap.
  • the stability of the packaging structure will deteriorate. Moreover, when the final sealing is performed, the sealant will easily fall from the opening 32 to the top of the device, which will cause the performance of the resonator to deteriorate.
  • a cover substrate is installed above the device.
  • An example cover substrate is a dome or cap-shaped "cap”, which can be positioned above each device and then fixed to a supporting substrate. After being unitized, the devices can be packaged one by one at the chip level, for example, packaged in a housing.
  • this packaging method will increase the overall size of the device and increase the packaging cost due to a large number of packaging steps. At the same time, it is easy to introduce particle contamination in the chip-scale packaging.
  • Another packaging method such as thin-film packaging, first deposits a sacrificial layer on the device during processing, then spin-coats a thin film as the packaging layer, and etches the holes to reach the sacrificial layer, and releases the sacrificial layer to form a cavity. Spin on a thin film to seal it.
  • This packaging method has simple process, good sealing, low cost, and is compatible with IC process.
  • a thin film bulk acoustic wave resonator assembly including:
  • MEMS devices including air gap structures
  • the packaging film forms a packaging space that closes the MEMS device
  • the MEMS device is provided with a first release hole communicating with the air gap structure, and the first release hole is located in the packaging space;
  • the packaging film is provided with a second release hole, and the second release hole is filled with a sealing material;
  • the horizontal distance between at least one of the second release holes and the corresponding first release hole is less than 20um.
  • the second release hole overlaps or partially overlaps the corresponding first release hole.
  • the horizontal distance between each of the second release holes and the corresponding first release hole is within a range of less than 20 um.
  • the MEMS device assembly includes a sealing layer at least partially covering the packaging film, and a material constituting the sealing layer constitutes a sealing material filling the second release hole.
  • the MEMS device includes a bulk acoustic wave resonator. Further, the MEMS device includes a thin-film bulk acoustic resonator.
  • the bulk acoustic wave resonator includes a bottom electrode, a piezoelectric layer and a top electrode
  • the packaging film covers the bulk acoustic wave resonator
  • the component includes a sealing layer at least partially covering the packaging film
  • the material constituting the sealing layer constitutes the sealing material filling the second release hole; and the material of the sealing layer is the same as the material of the top electrode, and the material of the packaging film is the same as the material of the piezoelectric layer.
  • the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymer, spin-on glass, plastic, resin, dielectric material, metal, silicon nitride, aluminum nitride and other materials;
  • the material of the film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotube, TOK DFR material, etc.
  • an electronic device which includes a plurality of the aforementioned MEMS device components.
  • At least two MEMS device components have a common first release hole.
  • at least two MEMS devices are packaged in one package space formed by a piece of package film.
  • the electronic device includes at least two packaging spaces, each packaging space is formed by a layer of packaging film, and at least two MEMS devices are encapsulated in at least one packaging space.
  • the electronic device includes a filter.
  • an electronic device which includes the above-mentioned electronic device or the above-mentioned MEMS device assembly.
  • a method for packaging a MEMS device includes an air gap structure and is provided with a first release hole communicating with the air gap structure.
  • the method includes step:
  • a second release hole communicating with the packaging space is opened on the packaging film, and the position of at least one second release hole is set in a vertical projection, at least one of the second release holes and the corresponding first release hole The horizontal distance between them is less than 20um;
  • Figure 1 is a schematic top view of a thin film bulk acoustic resonator in the prior art
  • Fig. 2 is a cross-sectional view taken along the line A-B of the resonator in Fig. 1;
  • 3A-3E are the processes of film packaging of the film bulk acoustic resonator in the prior art
  • FIG. 4A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • Fig. 4B is a schematic cross-sectional view along A-A in Fig. 4A;
  • FIG. 4C is a schematic diagram after a sealing layer is provided on the resonator shown in FIG. 4A;
  • FIG. 5A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • Figure 5B is a schematic cross-sectional view taken along A-A in Figure 5A;
  • FIG. 5C is a schematic diagram after a sealing layer is provided on the resonator shown in FIG. 5A;
  • Fig. 6A is a schematic top view of a filter according to an exemplary embodiment of the present invention.
  • Fig. 6B is a schematic cross-sectional view taken along line A-A in Fig. 6A;
  • FIG. 6C is a schematic diagram after a sealing layer is provided on the filter shown in FIG. 6A;
  • Fig. 6D is a schematic diagram exemplarily showing grouping and packaging of resonators in a filter
  • FIG. 7 is a schematic cross-sectional view showing a thin film package of a thin film bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • a thin-film bulk acoustic wave resonator is taken as an example to exemplarily describe the MEMS device assembly according to the embodiment of the present invention.
  • FIG. 4A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • FIG. 4B is a schematic cross-sectional view along AA in FIG. 4A
  • FIG. 4C is a sealing layer provided on the resonator shown in FIG. 4A Schematic diagram after.
  • FIG. 4A it is a top view of an air gap type film bulk acoustic resonator film package.
  • 10 is the air gap structure at the bottom of the FBAR
  • 11 is the release hole of the air gap 10 (corresponding to the first release hole, and a typical value of its size can be: 10um)
  • 12 is the bottom electrode of the resonator
  • 14 is the resonance
  • 31 is a packaging film
  • 32 is a release opening of the packaging film 31 (corresponding to the second release hole).
  • the release opening 32 of the packaging film 31 overlaps the release opening 11 of the air gap at the bottom of the resonator in vertical projection (more specifically, see FIG. 4B).
  • 10 is the air gap at the bottom of the resonator
  • 11 is the release hole of the air gap at the bottom of the resonator
  • 12 is the bottom electrode of the resonator
  • 13 is the piezoelectric layer of the resonator
  • 14 is the top electrode of the resonator
  • 32 is the release opening on the packaging film
  • 33 is the cavity under the packaging film.
  • the thickness of the packaging film 31 may be 1-10um, typically 3um, and the height of the cavity above the resonator may be 0.1-10um.
  • the liquid medicine enters the resonance through the release hole 11 during the formation of the packaging space 33 After being in the air gap at the bottom of the device, it can quickly circulate and flow out to take away chemical residues, etc., thus reducing the possibility of chemical residues remaining in the air gap, as shown by the arrow in Figure 4B, so it is beneficial to improve the resonator
  • the openings 32 of the packaging film 31 are on both sides of the effective area of the resonator, when the openings of the packaging film are finally sealed, even if the sealing agent falls, it will not affect the resonator The performance is affected.
  • the opening position of the packaging film 31 is located directly above the release hole 11 of the air gap 10, when the packaging film is formed, steps are not generated here, and there is no stress accumulation phenomenon, so that the packaging structure of the resonator is more improved. For stability.
  • a sealing layer is finally formed on the encapsulation film 31, as shown in 41 in Figure 4C.
  • the opening 32 on the encapsulation film 31 is sealed, and finally a hermetic seal is formed above the resonator.
  • the space 33 is sealed to seal the film bulk acoustic resonator.
  • the thickness of the sealing layer can be 10-50um.
  • FIG. 5A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • FIG. 5B is a schematic cross-sectional view along AA in FIG. 5A
  • FIG. 5C is a sealing layer provided on the resonator shown in FIG. 5A Schematic diagram after.
  • FIG. 5A it is a top view of another air gap type film bulk acoustic wave resonator film package.
  • 10 is the air gap structure at the bottom of the resonator
  • 11 is the release hole of the air gap at the bottom of the resonator
  • 12 is the bottom electrode of the resonator
  • 14 is the top electrode of the resonator
  • 31 is the packaging film
  • 32 is the packaging film 31 Of the opening.
  • the opening 32 on the packaging film 31 and the air gap release hole 11 at the bottom of the resonator do not overlap in the vertical direction, but they are very close horizontally, within a range of less than 40um, preferably less than 20um.
  • the opening 32 on the packaging film 31 and the release hole 11 of the air gap 10 at the bottom of the resonator do not overlap in the vertical direction, but they are relatively close horizontally, such as in the above-mentioned distance range.
  • the liquid medicine flowing in through the opening 32 can quickly circulate out after passing through the air gap 10 at the bottom of the resonator, which is beneficial to take away the liquid medicine residues, such as As shown by the arrow in FIG. 5B, the influence of the chemical residue on the performance of the resonator is therefore reduced.
  • a sealing layer is finally formed on the encapsulation film 31, as shown in 41 in FIG. 5C.
  • the opening 32 on the encapsulation film 31 is sealed, and finally an airtight is formed above the resonator.
  • the space 33 is sealed to seal the film bulk acoustic resonator.
  • FIG. 7 is a schematic cross-sectional view showing a thin film package of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention, wherein 10 is the bottom air gap structure of the resonator, and 11 is the release hole of the bottom air gap of the resonator 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, 14 is the top electrode of the resonator; 31 is the packaging film, 32 is the opening on the packaging film, 33 is the packaging space on the top of the resonator, 34 For the sealing layer.
  • the opening positions on the packaging film are located on both sides of the packaging film, and overlap with the release holes of the air gap at the bottom of the resonator in the vertical direction, or the horizontal distance is less than 20um.
  • thin-film packaging can also be applied to other MEMS devices containing air gap structures.
  • a MEMS device assembly including:
  • MEMS device including air gap structure 10;
  • the packaging film 31 forms a packaging space 33 enclosing the resonator
  • the resonator is provided with a first release hole (corresponding to the release hole 11) communicating with the air gap structure 10, and the first release hole is located in the packaging space;
  • the packaging film is provided with a second release hole (corresponding to the opening 32), and the second release hole is filled with a sealing material;
  • the horizontal distance between at least one of the second release holes and the corresponding first release hole is less than 20um.
  • the present invention also provides a packaging method for a MEMS device, the MEMS device includes an air gap structure and is provided with a first release hole communicating with the air gap structure, and the method includes the steps:
  • a second release hole communicating with the packaging space is opened on the packaging film, and the position of at least one second release hole is set in a vertical projection, at least one of the second release holes and the corresponding first release hole
  • the horizontal spacing between is less than 20um
  • FIG. 6A is a schematic top view of a filter (for example, a ladder filter) according to an exemplary embodiment of the present invention
  • FIG. 6B is a schematic cross-sectional view along AA in FIG. 6A
  • FIG. 6C is a filter shown in FIG. 6A
  • FIG. 6D is a schematic diagram exemplarily showing the grouping and packaging of resonators in the filter.
  • the filter is an air gap type FBAR according to a ladder structure, that is, each stage is composed of a series resonator and a parallel resonator, where 61 and 62 are series resonators, and 63 is a parallel resonator.
  • 11 is the release hole of the air gap at the bottom of the resonator
  • 31 is the packaging film
  • 32 is the opening structure of the packaging film.
  • the openings on the packaging film 32 and the release holes 11 of the air gap at the bottom of the resonator overlap in the vertical direction, so that when the film packaging cavity is released, the generated liquid medicine will be minimized.
  • the impact of residue on the air gap at the bottom of the resonator reduces the impact on the performance of the resonator.
  • 10 is the air gap structure at the bottom of the resonator
  • 11 is the release hole of the air gap at the bottom of the resonator
  • 12 is the bottom electrode of the resonator
  • 13 is the piezoelectric layer of the resonator
  • 14 is the top electrode of the resonator
  • 31 is the packaging film structure
  • 32 is the opening on the packaging film
  • 33 is the cavity structure under the packaging film.
  • a sealing layer is finally formed on the encapsulation film 31, as shown in 41 in Figure 6C.
  • the opening 32 on the encapsulation film 31 is sealed, and finally a hermetic seal is formed above the resonator. Space 33, so that the film bulk acoustic resonator is hermetically packaged.
  • the opening 32 of the packaging film 31 overlaps the release hole 11 of the air gap at the bottom of the resonator in the thickness direction, which can effectively reduce the amount of liquid medicine generated during the formation of the cavity above the resonator.
  • the residue is left in the cavity at the bottom of the resonator, which is beneficial to improve the performance of the resonator.
  • FIGS. 6A-6C of the present invention are described by using a filter film package as an example. However, those skilled in the art can understand that the above film package is not limited to being applied to filters. Based on this, the embodiment of the present invention also proposes an electronic device including a plurality of the above-mentioned MEMS device components. Optionally, at least two MEMS device components have a common first release hole. Further, at least two MEMS devices are packaged in one package space formed by a layer of package film.
  • the electronic device includes at least two packaging spaces, each packaging space is formed by a layer of packaging film, and at least two MEMS devices are encapsulated in at least one packaging space.
  • the electrode constituent materials can be gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al) , Titanium (Ti) and other similar metals.
  • the piezoelectric layer material can be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), quartz (Quartz), potassium niobate (KNbO 3 ) or tantalic acid Materials such as lithium (LiTaO 3 ).
  • the material of the sacrificial layer can be organic material, polymer, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, Ti, Cu), metal oxide (such as MgO, ZnO), photoresist (such as SU- 8) and other easily soluble materials.
  • Packaging film materials can be silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotubes, TOK DFR materials, etc.;
  • the sealing layer material can be dense materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and other materials.
  • the material of the sealing layer is the same as the material of the top electrode, and the material of the packaging film is the same as the material of the piezoelectric layer. More specifically, the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymer, spin-on glass, plastic, resin, dielectric material, metal, silicon nitride, aluminum nitride and other materials; The material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotubes, TOK DFR materials, etc.
  • the sacrificial layer forming the air gap structure and the sacrificial layer forming the packaging space can use the same material, which is selected from one of the following materials: organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, Ti, Cu), metal oxides (such as MgO, ZnO), photoresist (such as SU-8) and other easily soluble materials.
  • the expression “vertical projection” is used, as shown in FIG. 4B, which should be understood as projection in the thickness direction of the resonator.
  • the “coincidence” in the present invention is on the same vertical projection line, or basically on the same vertical projection line.
  • the embodiment of the present invention also relates to an electronic device, including the above-mentioned MEMS device assembly or the above-mentioned electronic device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Ensemble dispositif MEMS, comprenant : un dispositif MEMS, comprenant une structure d'entrefer (10) ; et un film d'emballage (31) formant un espace d'emballage (33) pour sceller le dispositif MEMS, le dispositif MEMS étant pourvu d'un premier trou de libération (11) en communication avec la structure d'entrefer (10), le premier trou de libération (11) est disposé à l'intérieur de l'espace d'emballage (33) ; le film d'emballage (31) est pourvu d'un second trou de libération (32), le second trou de libération (32) est rempli d'un matériau d'étanchéité ; en outre, dans la projection verticale, l'espacement horizontal entre au moins un second trou de libération (32) et le premier trou de libération correspondant (11) est inférieur à 20 µm. L'invention concerne également un dispositif électronique ayant l'ensemble dispositif MEMS, un dispositif électronique ayant l'ensemble dispositif MEMS ou le dispositif électronique, et un procédé d'emballage pour le dispositif MEMS.
PCT/CN2020/076207 2019-03-02 2020-02-21 Emballage pour dispositif mems dont le trou de libération est disposé dans un espace d'emballage WO2020177557A1 (fr)

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CN201910157928.3 2019-03-02
CN201910157928.3A CN111003684B (zh) 2019-03-02 2019-03-02 释放孔位于封装空间内的mems器件的封装

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Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
WO2022088015A1 (fr) * 2020-10-30 2022-05-05 京东方科技集团股份有限公司 Unité de transducteur ultrasonique et procédé de fabrication correspondant
CN115106274A (zh) * 2022-06-14 2022-09-27 北京海创微芯科技有限公司 一种mems换能器及制作方法
CN117040478B (zh) * 2023-10-08 2024-01-30 深圳新声半导体有限公司 Baw滤波器及其制备方法、集成电路及电子设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060267109A1 (en) * 2005-05-30 2006-11-30 Kabushiki Kaisha Toshiba Semiconductor device using MEMS technology
CN101465628A (zh) * 2009-01-15 2009-06-24 电子科技大学 一种薄膜体声波谐振器及其制备方法
CN103930979A (zh) * 2011-11-11 2014-07-16 国际商业机器公司 带有非晶硅梁的集成半导体器件、制造方法和设计结构
US8910355B2 (en) * 2011-12-12 2014-12-16 International Business Machines Corporation Method of manufacturing a film bulk acoustic resonator with a loading element
CN109088614A (zh) * 2018-06-28 2018-12-25 深圳华远微电科技有限公司 声表面波滤波器及其封装方法和电子设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8742872B2 (en) * 2010-03-18 2014-06-03 Panasonic Corporation MEMS element, and manufacturing method of MEMS element
US20130119489A1 (en) * 2011-11-11 2013-05-16 Qualcomm Incorporated Method and apparatus for wafer-level solder hermetic seal encapsulation of mems devices
JP6331552B2 (ja) * 2014-03-25 2018-05-30 セイコーエプソン株式会社 Ｍｅｍｓデバイス及びその製造方法
CN104507014B (zh) * 2014-12-26 2018-08-28 上海集成电路研发中心有限公司 一种具有褶皱型振动膜的mems麦克风及其制造方法
CN105185802B (zh) * 2015-08-31 2018-05-01 上海集成电路研发中心有限公司 单芯片可见光红外混合成像探测器像元结构及制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060267109A1 (en) * 2005-05-30 2006-11-30 Kabushiki Kaisha Toshiba Semiconductor device using MEMS technology
CN101465628A (zh) * 2009-01-15 2009-06-24 电子科技大学 一种薄膜体声波谐振器及其制备方法
CN103930979A (zh) * 2011-11-11 2014-07-16 国际商业机器公司 带有非晶硅梁的集成半导体器件、制造方法和设计结构
US8910355B2 (en) * 2011-12-12 2014-12-16 International Business Machines Corporation Method of manufacturing a film bulk acoustic resonator with a loading element
CN109088614A (zh) * 2018-06-28 2018-12-25 深圳华远微电科技有限公司 声表面波滤波器及其封装方法和电子设备

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