WO2020177558A1 - Emballage de dispositif mems ayant un trou de libération à l'extérieur de l'espace d'emballage - Google Patents

Emballage de dispositif mems ayant un trou de libération à l'extérieur de l'espace d'emballage Download PDF

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Publication number
WO2020177558A1
WO2020177558A1 PCT/CN2020/076211 CN2020076211W WO2020177558A1 WO 2020177558 A1 WO2020177558 A1 WO 2020177558A1 CN 2020076211 W CN2020076211 W CN 2020076211W WO 2020177558 A1 WO2020177558 A1 WO 2020177558A1
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WIPO (PCT)
Prior art keywords
packaging
release hole
packaging film
mems device
silicon
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PCT/CN2020/076211
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English (en)
Chinese (zh)
Inventor
张孟伦
庞慰
杨清瑞
Original Assignee
天津大学
诺思(天津)微系统有限责任公司
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Publication of WO2020177558A1 publication Critical patent/WO2020177558A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/462—Microelectro-mechanical filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02283—Vibrating means

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, in particular to a MEMS device assembly, an electronic device having the MEMS device assembly, an electronic device having the MEMS device assembly or the electronic device, and a MEMS device package method.
  • Small, high-performance film bulk acoustic wave (FBAR, film bulk acoustic resonator) bandpass filters are widely used in mobile wireless communication systems.
  • the thin-film bulk acoustic wave bandpass filter is based on a high-Q resonator.
  • the thin-film bulk acoustic wave resonator uses the thickness extension mode of a piezoelectric aluminum nitride (AlN) film.
  • the thin film bulk acoustic wave resonator mainly has the following three structures:
  • Silicon reverse etching type This bulk silicon micro-manufacturing process is used to etch and remove most of the silicon material from the reverse side of the silicon wafer to form an air interface on the lower surface of the piezoelectric oscillatory stack, thereby confining sound waves within the piezoelectric oscillatory stack. Because the large area of silicon substrate is removed, it will inevitably affect the mechanical fastness of the device and greatly reduce the yield.
  • Air gap type The surface micro-manufacturing process used forms an air gap on the upper surface of the silicon wafer to limit the sound waves in the piezoelectric oscillator stack.
  • the air gap may be a sinking type formed by removing part of the surface of the silicon wafer, or it may be an upward convex shape formed directly on the silicon surface without removing the silicon.
  • This type of FBAR can not only confine the sound wave within the piezoelectric oscillator stack, and obtain a high Q value.
  • the surface micro-manufacturing process it is not necessary to remove most of the silicon substrate, so it is compatible with the silicon wafer.
  • the mechanical fastness is much better; in addition, there is no need to process the reverse side of the silicon substrate so that this method can be compatible with the traditional silicon integrated circuit process and has the possibility of integration.
  • SMR Solidly mounted resonator
  • the Bragg reflector generally uses W and SiO 2 as the high and low impedance acoustic layer, because the acoustic impedance between W and SiO 2 is relatively different.
  • W and SiO 2 are materials in the standard CMOS process. Its biggest advantage is that it has strong mechanical fastness, good integration, and does not need to use technology, which makes it easy for many semiconductor factories that do not have technology to join in.
  • Figures 1 and 2 are respectively a top view of a typical air gap type FBAR and a cross-sectional view taken along A-A in the top view.
  • 10 is the air gap structure of the resonator
  • 11 is the release hole of the air gap
  • 12 is the bottom electrode of the resonator
  • 13 is the piezoelectric layer of the resonator
  • 14 is the top electrode of the resonator.
  • film bulk acoustic resonators have specific packaging requirements under different application environments.
  • certain BAW resonators can work optimally in specific environmental conditions, such as a specific range of humidity or pressure or in an inert gas.
  • certain bulk acoustic wave resonators may be sensitive to certain pollution.
  • 3A-3E show the thin film packaging process of the resonator in the prior art. as the picture shows:
  • the known thin film packaging process is as follows:
  • a packaging film 31 is formed above the sacrificial layer, as shown in FIG. 3C;
  • a sealing layer 35 is formed on the packaging film 31 to seal the openings in the packaging film 31, thereby sealing the packaging cavity 33, as shown in FIG. 3E.
  • the position of the opening 32 is located in the middle of the film 31, so that the liquid medicine enters the packaging.
  • the distance into the air gap 10 through the release hole 11 becomes longer, as shown by the arrow in FIG. 3D. Therefore, chemical residues and the like generated during the release of the sacrificial layer 30 are likely to stay in the air gap 10, resulting in deterioration of the performance of the resonator.
  • the air gap type FBAR there will be a step 34 in the packaging film 34 formed on the release hole 11 of the air gap.
  • the stability of the packaging structure will deteriorate. Moreover, when the final sealing is performed, the sealant will easily fall from the opening 32 to the top of the device, which will cause the performance of the resonator to deteriorate.
  • a cover substrate is installed above the device.
  • An example cover substrate is a dome or cap-shaped "cap” that can be positioned above each device and then fixed to a supporting substrate. After being unitized, the devices can be packaged one by one at the chip level, for example, packaged in a housing.
  • this packaging method increases the overall size of the device, and increases the packaging cost due to a large number of packaging steps. At the same time, it is easy to introduce particle contamination in the chip-scale packaging.
  • Another packaging method such as thin-film packaging, first deposits a sacrificial layer on the device during processing, then spin-coats a thin film as the packaging layer, and etches the holes to reach the sacrificial layer, and releases the sacrificial layer to form a cavity. Spin on a thin film to seal it.
  • This packaging method has simple process, good sealing, low cost, and is compatible with IC process.
  • a MEMS device assembly including:
  • MEMS devices including air gap structures
  • the packaging film forms a packaging space that closes the MEMS device
  • the MEMS device is provided with a first release hole communicating with the air gap structure
  • the first release hole is located outside the packaging space.
  • the packaging film is provided with a second release hole, and the second release hole is filled with a sealing material.
  • the packaging film covers and seals the first release hole.
  • the packaging film is provided with a plurality of second release holes.
  • the MEMS device includes a bulk acoustic wave resonator. Further, the MEMS device includes a thin film bulk acoustic resonator.
  • the bulk acoustic wave resonator includes a bottom electrode, a piezoelectric layer and a top electrode
  • the packaging film covers the bulk acoustic wave resonator
  • the component includes a sealing layer at least partially covering the packaging film
  • the material constituting the sealing layer constitutes the sealing material filling the second release hole; and the material of the sealing layer is the same as the material of the top electrode, and the material of the packaging film is the same as the material of the piezoelectric layer.
  • the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymer, spin-on glass, plastic, resin, dielectric material, metal, silicon nitride, aluminum nitride and other materials;
  • the material of the film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotube, TOK DFR material, etc.
  • an electronic device which includes a plurality of the aforementioned MEMS device components.
  • At least two MEMS device components have a common first release hole.
  • At least two MEMS devices are packaged in one packaging space formed by a layer of packaging film.
  • the electronic device includes a filter.
  • an electronic device which includes the above-mentioned electronic device or the above-mentioned MEMS device assembly.
  • a method for packaging a MEMS device includes an air gap structure and is provided with a first release hole communicating with the air gap structure.
  • the method includes step:
  • At least one second release hole communicating with the packaging space is opened on the packaging film
  • Figure 1 is a schematic top view of a thin film bulk acoustic resonator in the prior art
  • Fig. 2 is a cross-sectional view taken along the line A-B of the resonator in Fig. 1;
  • 3A-3E are the processes of film packaging of the film bulk acoustic resonator in the prior art
  • Fig. 4A is a schematic top view of a film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • Fig. 4B is a schematic cross-sectional view along A-A in Fig. 4A;
  • Fig. 5A is a schematic top view of a filter according to an exemplary embodiment of the present invention.
  • Figure 5B is a schematic cross-sectional view taken along A-A in Figure 5A;
  • Figures 6A-6F schematically show a thin-film packaging process of a thin-film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • a thin-film bulk acoustic wave resonator is taken as an example to exemplarily describe the MEMS device assembly according to the embodiment of the invention.
  • FIG. 4A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • Fig. 4B is a schematic cross-sectional view along A-A in Fig. 4A.
  • 10 is the bottom cavity of the FBAR (corresponding to the air gap structure), and 11 is the release hole of the bottom cavity 10 (corresponding to the first release hole, and the typical value of its size can be: 10um); 12 is the bottom electrode of the FBAR, 13 is the piezoelectric layer of the FBAR, and 14 is the top electrode of the FBAR; 20 is the packaging film, and 21 is the opening on the packaging film (corresponding to the second release hole).
  • the release hole 11 of the cavity 10 at the bottom of the FBAR is outside the cavity formed by the packaging film 20.
  • 10 is the cavity at the bottom of the FBAR
  • 11 is the release hole of the cavity 10 at the bottom of the FBAR
  • 12 is the bottom electrode of the FBAR.
  • 23 is a flat layer located on both sides of the bottom electrode 12, the added flat layer is aligned with the oblique end faces at both ends of the bottom electrode 12, thereby forming a flat and smooth surface, which is beneficial to deposit on the connection between the bottom electrode 12 and the flat layer 23 Piezo film with good C-axis orientation.
  • the flat layer can be made of suitable dielectric materials such as silicon dioxide, silicon nitride, silicon carbide, etc. It is not necessary to provide a flat layer.
  • 13 is the piezoelectric layer of FBAR
  • 14 is the top electrode of FBAR
  • 20 is the packaging film
  • 21 is the opening on the packaging film
  • 22 is the sealing layer.
  • the release hole 11 of the cavity 10 at the bottom of the FBAR is outside the packaging space 24 formed by the packaging film 20.
  • the release hole 11 Since the release hole 11 is outside the packaging space 24, the release hole is sealed during the process of forming the packaging film 20, so in the process of releasing the packaging space 24, there will be no liquid medicine residues, particles, etc. entering the FBAR In the bottom cavity 10, the performance of the resonator will not be affected. Moreover, the position and number of the openings 21 on the packaging film 20 can be flexibly selected. At the position of the opening, the process steps for aligning with the bottom cavity release hole 11 can be omitted, and the packaging cost can be reduced; at the same time, the number of openings can be increased, and the formation of the cavity 24 can be accelerated. In addition, for the FBAR of the same area, encapsulating the release hole 11 outside the cavity 24 can reduce the area of the cavity 24 on the top of the resonator, thereby reducing the package size of the resonator.
  • Fig. 5A is a schematic top view of a filter according to an exemplary embodiment of the present invention
  • Fig. 5B is a schematic cross-sectional view along line A-A in Fig. 5A.
  • the filter is composed of an air gap type FBAR according to a ladder structure, that is, each stage is composed of a series resonator and a parallel resonator.
  • 30, 31, 32 are series resonators, 33 and 34 are parallel resonators; 11 is the release hole of the cavity at the bottom of the resonator, 20 is the packaging film, and 21 is the opening on the packaging film 20.
  • 10 is the bottom cavity of FBAR
  • 11 is the release hole of the bottom cavity of FBAR
  • 12 is the bottom electrode of FBAR
  • 23 is the flat layer
  • 13 is the piezoelectric layer of FBAR
  • 14 is the top electrode of FBAR
  • 21 is the opening of the packaging film
  • 24 is the cavity on the top of the FBAR
  • 22 is the sealing layer.
  • the release hole 11 of the cavity at the bottom of the resonator is outside the cavity 24 at the top of the resonator.
  • the release hole 11 of the cavity at the bottom of the resonator is outside the packaging space formed by the packaging film 20, the release hole 11 is sealed by the packaging film during the process of forming the packaging film 20, so in the process of releasing the packaging space 24 No chemical residues, particles, etc. enter the bottom cavity 10 of the FBAR, so the performance of the resonator will not be affected, and a high-performance filter can be obtained after packaging.
  • FIGS 6A-6F schematically illustrate the thin-film packaging process of a thin-film bulk acoustic resonator according to an exemplary embodiment of the present invention, specifically:
  • Figure 6A As shown in Figure 6A, it is a cavity-type thin-film bulk acoustic resonator with good performance. It includes: 10 bottom cavity structure, 11 bottom cavity release hole; 12 bottom electrode, 23 is the flat layer on both sides of the bottom electrode, 13 piezoelectric layer, 14 top electrode;
  • the material of the sacrificial layer can be organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metals (such as germanium, titanium, copper), metal oxides (magnesium oxide, zinc oxide), photoresist and other materials .
  • the packaging film 20 is formed on the sacrificial layer and passed through light The process of etching and etching forms a sacrificial layer with openings 21 reaching the bottom on the packaging film 20, as shown in FIG. 6D.
  • the thickness of the packaging film can be 1-10um, typically 3um.
  • the packaging film material can be silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist (such as SU-8), polymer, graphene, nanotube, TOK and DFR materials, etc.
  • the sealing layer material can be dense materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and other materials.
  • thin-film packaging can also be applied to other MEMS devices containing air gap structures.
  • a MEMS device assembly including:
  • MEMS device including an air gap structure (corresponding to cavity 10);
  • the packaging film 20 forms a packaging space 24 enclosing the MEMS device
  • the MEMS device is provided with a first release hole (corresponding to the release hole 11) communicating with the air gap structure;
  • the first release hole is located outside the packaging space.
  • the packaging film is provided with a second release hole (corresponding to the opening 21), and the second release hole is filled with a sealing material.
  • packaging film covers and seals the first release hole.
  • the embodiment of the present invention also proposes an electronic device including a plurality of the above-mentioned MEMS device components.
  • at least two MEMS device components have a common first release hole.
  • at least two MEMS devices are packaged in one package space formed by a layer of package film.
  • the present invention also provides a packaging method for a MEMS device.
  • the resonator includes an air gap structure and is provided with a first release hole communicating with the air gap structure.
  • the method includes the steps:
  • At least one second release hole communicating with the packaging space is opened on the packaging film
  • the electrode constituent materials can be gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al) , Titanium (Ti) and other similar metals.
  • the piezoelectric layer material can be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), quartz (Quartz), potassium niobate (KNbO 3 ) or tantalic acid Materials such as lithium (LiTaO 3 ).
  • the material of the sacrificial layer can be organic material, polymer, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, Ti, Cu), metal oxide (such as MgO, ZnO), photoresist (such as SU- 8) and other easily soluble materials.
  • the packaging film material can be silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotubes and other materials;
  • the sealing layer material can be dense materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and other materials.
  • the material of the sealing layer is the same as the material of the top electrode, and the material of the packaging film is the same as the material of the piezoelectric layer. More specifically, the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymer, spin-on glass, plastic, resin, dielectric material, metal, silicon nitride, aluminum nitride and other materials; The material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotubes, TOK DFR materials, etc.
  • the sacrificial layer forming the air gap structure and the sacrificial layer forming the packaging space can use the same material, which is selected from one of the following materials: organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, Ti, Cu), metal oxides (such as MgO, ZnO), photoresist (such as SU-8) and other easily soluble materials.
  • the embodiment of the present invention also relates to an electronic device, including the above-mentioned MEMS device assembly or the above-mentioned electronic device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente invention concerne un ensemble dispositif MEMS, comprenant : un dispositif MEMS comprenant une structure d'entrefer ; et un film d'emballage (20) formant un espace d'emballage (24) entourant le dispositif MEMS, le dispositif MEMS étant pourvu d'un premier trou de libération (11) en communication avec la structure d'entrefer ; et le premier trou de libération (11) étant situé à l'extérieur de l'espace d'emballage (24).
PCT/CN2020/076211 2019-03-02 2020-02-21 Emballage de dispositif mems ayant un trou de libération à l'extérieur de l'espace d'emballage WO2020177558A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910157931.5 2019-03-02
CN201910157931.5A CN111010109B (zh) 2019-03-02 2019-03-02 释放孔位于封装空间外的mems器件的封装

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WO2020177558A1 true WO2020177558A1 (fr) 2020-09-10

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CN118083906A (zh) * 2024-04-23 2024-05-28 芯联越州集成电路制造（绍兴）有限公司 一种mems器件及其制备方法和电子装置
CN118083906B (en) * 2024-04-23 2024-07-09 芯联越州集成电路制造（绍兴）有限公司 MEMS device, preparation method thereof and electronic device

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CN111934639B (zh) * 2020-06-28 2021-10-29 见闻录(浙江)半导体有限公司 一种体声波谐振器的空腔结构及制作工艺
CN114674485A (zh) * 2022-02-21 2022-06-28 华中科技大学 小量程mems电容式压力传感器及其制备方法
CN115589212B (zh) * 2022-12-12 2023-04-11 成都频岢微电子有限公司 一种具有薄膜封装的体声波谐振器、制造方法及滤波器

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CN118083906B (en) * 2024-04-23 2024-07-09 芯联越州集成电路制造（绍兴）有限公司 MEMS device, preparation method thereof and electronic device

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