WO2020174305A1 - 表示装置、表示モジュール、電子機器、及びテレビジョン装置 - Google Patents
表示装置、表示モジュール、電子機器、及びテレビジョン装置 Download PDFInfo
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- WO2020174305A1 WO2020174305A1 PCT/IB2020/051228 IB2020051228W WO2020174305A1 WO 2020174305 A1 WO2020174305 A1 WO 2020174305A1 IB 2020051228 W IB2020051228 W IB 2020051228W WO 2020174305 A1 WO2020174305 A1 WO 2020174305A1
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- Prior art keywords
- light emitting
- layer
- emitting device
- compound
- electrode
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- FZYQHMHIALEGMG-MVOHYUIRSA-N pcbb Chemical compound CCCCOC(=O)CCCC1([C@]23C4=C5C=CC6=C7C=CC8=C9C=CC%10=C%11C=CC%12=C(C=C4)[C@]31C1=C3C4=C2C5=C6C=2C7=C8C5=C9C%10=C(C3=C5C4=2)C%11=C%121)C1=CC=CC=C1 FZYQHMHIALEGMG-MVOHYUIRSA-N 0.000 description 1
- JZRYQZJSTWVBBD-UHFFFAOYSA-N pentaporphyrin i Chemical compound N1C(C=C2NC(=CC3=NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 JZRYQZJSTWVBBD-UHFFFAOYSA-N 0.000 description 1
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- 238000001296 phosphorescence spectrum Methods 0.000 description 1
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- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 1
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- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 150000002909 rare earth metal compounds Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical group C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
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- 230000002194 synthesizing effect Effects 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
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- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- 150000003577 thiophenes Chemical class 0.000 description 1
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 1
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- 125000003944 tolyl group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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- 150000003852 triazoles Chemical group 0.000 description 1
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 1
- 229910000404 tripotassium phosphate Inorganic materials 0.000 description 1
- 235000019798 tripotassium phosphate Nutrition 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
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- 239000011800 void material Substances 0.000 description 1
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- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N21/00—Selective content distribution, e.g. interactive television or video on demand [VOD]
- H04N21/40—Client devices specifically adapted for the reception of or interaction with content, e.g. set-top-box [STB]; Operations thereof
- H04N21/43—Processing of content or additional data, e.g. demultiplexing additional data from a digital video stream; Elementary client operations, e.g. monitoring of home network or synchronising decoder's clock; Client middleware
- H04N21/436—Interfacing a local distribution network, e.g. communicating with another STB or one or more peripheral devices inside the home
- H04N21/4363—Adapting the video stream to a specific local network, e.g. a Bluetooth® network
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
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- H10K50/00—Organic light-emitting devices
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- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H10K50/16—Electron transporting layers
- H10K50/166—Electron transporting layers comprising a multilayered structure
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
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- H10K2101/10—Triplet emission
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- H10K2101/20—Delayed fluorescence emission
- H10K2101/25—Delayed fluorescence emission using exciplex
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- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
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- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
Definitions
- Display device display module, electronic device, and television device
- One embodiment of the present invention relates to a display device, a display module, an electronic device, and a television device.
- the technical field of one embodiment of the present invention includes a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, an electronic device, a lighting device, an input device (such as a touch sensor), and an input/output device (such as a touch panel). ), those driving methods, or those manufacturing methods can be mentioned as an example.
- display devices are expected to be applied to various purposes.
- a home-use television device also referred to as a television or a television receiver
- a digital signage digital signage
- PID Pub 1 ic Information
- D isplay
- mobile information terminals smart phones and tablet terminals equipped with touch panels are being developed.
- a light emitting device having a light emitting device As a display device, for example, a light emitting device having a light emitting device (also referred to as a light emitting element) has been developed.
- Electroluminescence (EL) The light emitting device (EL device, also called EL element) that uses the phenomenon is easy to be thin and lightweight and can respond to input signals at high speed. It has features such as being able to be driven by a DC low-voltage power supply, and its application to display devices is under consideration.
- an organic EL device (refer both organic EL device) has been applied, the light emitting device is disclosed having a flexible! 'Production.
- An object of one embodiment of the present invention is to provide a display device with a long life.
- An object of one embodiment of the present invention is to provide a highly reliable display device.
- An object of one embodiment of the present invention is to provide a large-sized display device.
- An object of one embodiment of the present invention is to provide a display device with high resolution.
- One object of one embodiment of the present invention is to provide a display device with high productivity.
- An object of one embodiment of the present invention is to provide a display device with high display quality.
- One embodiment of the present invention is a display device including a first light-emitting device and a second light-emitting device.
- the first light emitting device has a first electrode and a common electrode.
- the second light emitting device has a second electrode and a common electrode.
- the first light emitting device has a hole injecting layer, a first light emitting layer, and an electron transporting layer in this order from the electrode side of the first electrode and the common electrode that functions as an anode.
- the second light emitting device has a second light emitting layer between the second electrode and the common electrode.
- the hole injection layer is in contact with the electrode functioning as the anode of the first electrode and the common electrode.
- the hole injection layer has a first compound and a second compound.
- the first light emitting layer has a third compound that emits light of the first color.
- the second light emitting layer has a fourth compound that emits light of the second color.
- the electron transport layer has a fifth compound.
- the first compound has an electron accepting property with respect to the second compound.
- HOMO_ position of the second compound is an 5.4 6 hereinafter more than a 5. 7 6 V.
- Compounds of the fifth, HOMO_ position is not less one 6. 0 6 V or more, and the field intensity [/. 1 11] square root electron mobility in 600 1 X 10 of - 7 ⁇ 1 11 2/8 or 5 X 10 - 5 ⁇ 1 11 is 2/8 or less.
- the second light emitting device has a layer common to the first light emitting device between the second electrode and the common electrode.
- the second light emitting device preferably has a hole injection layer and an electron transport layer.
- One embodiment of the present invention is a display device including a first light-emitting device and a second light-emitting device.
- the first light emitting device has a first electrode and a common electrode.
- the second light emitting device has a second electrode and a common electrode.
- the first light emitting device has a hole injecting layer, a first hole transporting layer, a first light emitting layer, and an electron transporting layer in this order from the electrode side which functions as an anode among the first electrode and the common electrode. ..
- the second light emitting device has a second light emitting layer between the second electrode and the common electrode.
- the hole injection layer is in contact with the electrode functioning as the anode of the first electrode and the common electrode.
- the hole injection layer has a first compound and a second compound.
- the first light emitting layer has a third compound that emits light of the first color.
- the second light emitting layer has a fourth compound that emits light of the second color.
- the electron transport layer has a fifth compound.
- the first hole transport layer has a sixth compound.
- the first compound has an electron accepting property with respect to the second compound.
- the ⁇ 01 ⁇ 0 level is ⁇ 1.76 V and ⁇ 1.546 V.
- Compounds of the fifth: "0 0_ position is one 6.0 and at 6 V or more, and the field intensity [/ Rei_1 11] square root electron mobility at 600 1 X 10 7. 1 11 2/8 or 5 X 10- 5. 1 11 of 2/8 or less.
- the level of ⁇ circumflex over () ⁇ of the sixth compound is less than or equal to the level of ⁇ circumflex over (01) ⁇ 0 ⁇ of the second compound.
- the difference between the ⁇ 01 ⁇ 0 level of the sixth compound and the ⁇ 01 ⁇ 0 level of the second compound is ⁇ .
- Each of the second compound and the sixth compound preferably has at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton.
- the first light emitting device further has a second hole transporting layer.
- the second hole transport layer preferably contains the seventh compound.
- the HOMO_ position of the seventh compound is preferably lower than the HOMO_ position of the sixth compound. It is preferable that each of the second compound, the sixth compound, and the seventh compound has at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton.
- One embodiment of the present invention is a display device including a first light-emitting device and a second light-emitting device.
- the first light emitting device has a first electrode and a common electrode.
- the second light emitting device has a second electrode and a common electrode.
- the first light emitting device has a hole injecting layer, a first light emitting layer, and an electron transporting layer in this order from the electrode side of the first electrode and the common electrode that functions as an anode.
- the second light emitting device has a second light emitting layer between the second electrode and the common electrode.
- the hole injection layer is in contact with the electrode functioning as the anode of the first electrode and the common electrode.
- the hole injection layer has a first compound and a second compound.
- the first light emitting layer has a third compound that emits light of the first color.
- the second light emitting layer has a fourth compound that emits light of the second color.
- the electron transport layer has a fifth compound and an eighth compound.
- the first compound has an electron accepting property with respect to the second compound.
- the HOMO level of the second compound is not less than 1.76 and not more than 5.66 V.
- the fifth compound has a HOMO_ position of not less than 6.06 V and a square root of electric field strength [/ ⁇ 111].
- the eighth compound is an organic complex having an alkali metal or an alkaline earth metal.
- the abundance ratio of the fifth compound and the eighth compound in the electron transport layer is preferably different between the first light emitting layer side and the common electrode side.
- the electron transport layer preferably has a first region on the first light emitting layer side and a second region on the common electrode side.
- the second region preferably has a smaller abundance of the eighth compound than the first region.
- the first light emitting device preferably further has a first hole transport layer.
- the first hole transport layer preferably contains the sixth compound.
- the HOMO_ position of the sixth compound is preferably a value equal to or lower than the HOMO_ position of the second compound. Position of the second compound It is preferable that the difference from the position is within 0.26 V. It is preferable that the second compound and the sixth compound each have at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton.
- the first light emitting device further has a second hole transport layer.
- the second hole transport layer preferably contains the seventh compound.
- the HOMO_ position of the seventh compound is preferably lower than the HOMO_ position of the sixth compound. It is preferable that each of the second compound, the sixth compound, and the seventh compound has at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton.
- Each of the third compound and the fourth compound is preferably a fluorescent substance. ⁇ 02020/174305 ? €1/162020/051228
- the first color is preferably blue.
- the deterioration curve represented by the change in luminance of light emission obtained when a constant current is applied to the first light emitting device has a maximum value.
- One embodiment of the present invention is a display device including a first light emitting device, a second light emitting device, and a third light emitting device.
- the first light emitting device has a first electrode and a common electrode.
- the second light emitting device has a second electrode and a common electrode.
- the third light emitting device has a third electrode and a common electrode.
- the first light emitting device has a hole injection layer, a first light emitting layer, and an electron transport layer in this order from the electrode side of the first electrode and the common electrode that functions as an anode.
- the second light emitting device has a second light emitting layer between the second electrode and the common electrode.
- the third light emitting device has a third light emitting layer between the third electrode and the common electrode.
- the hole injection layer is in contact with the first electrode or the common electrode that functions as an anode.
- the hole injection layer has a first compound and a second compound.
- the electron-transporting layer has a third compound,
- the maximum peak wavelength of the emission spectrum of the second light emitting device is shorter than the maximum peak wavelength of the emission spectrum of the third light emitting device.
- the area of the light emitting region of the second light emitting device is larger than the area of the light emitting region of the third light emitting device.
- the area of the light emitting region of the first light emitting device is not less than the area of the light emitting region of the third light emitting device and not more than the area of the light emitting region of the second light emitting device.
- One embodiment of the present invention is a display device including a first light emitting device, a second light emitting device, and a third light emitting device.
- the first light emitting device has a first electrode and a common electrode.
- the second light emitting device has a second electrode and a common electrode.
- the third light emitting device has a third electrode and a common electrode.
- the first light emitting device has a first light emitting layer and an electron transport layer in order from the electrode side of the first electrode and the common electrode that functions as an anode.
- the second light emitting device has a second light emitting layer between the second electrode and the common electrode.
- the third light emitting device has a third light emitting layer between the third electrode and the common electrode.
- the electron-transporting layer has an electron-transporting material and an organic metal complex of alkali metal or alkaline earth metal.
- the electron transport layer has a first region and a second region located closer to the common electrode than the first region. The first region and the second region have different concentrations of the electron transporting material.
- the maximum peak wavelength of the emission spectrum of the first light emitting device is shorter than the maximum peak wavelength of the emission spectrum of the second light emitting device.
- the maximum peak wavelength of the emission spectrum of the second light emitting device is shorter than the maximum peak wavelength of the emission spectrum of the third light emitting device.
- the area of the light emitting region of the second light emitting device is larger than the area of the light emitting region of the third light emitting device.
- the area of the light emitting region of the first light emitting device is not less than the area of the light emitting region of the third light emitting device and not more than the area of the light emitting region of the second light emitting device.
- the second region preferably has a lower concentration of the electron transporting material than the first region.
- the first light emitting device preferably emits fluorescence
- the second light emitting device and the third light emitting device each preferably emits phosphorescence.
- One embodiment of the present invention includes a display device having any of the above structures, and a connector such as a flexible printed circuit board (F 1 exible printed circuit, hereinafter referred to as FPC) or a TCP (Tape Carrier Package) is attached.
- FPC flexible printed circuit board
- TCP Transmission Carrier Package
- Display module or a display module such as a display module in which an integrated circuit (IC) is mounted by a C OG (Ch ip On Glass) method or a CO F (Ch ip On Film) method.
- One embodiment of the present invention is an electronic device including the above display module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.
- One embodiment of the present invention is a television device including the above display module and a communication control unit, which can be connected to a computer network using the communication control unit.
- a long-life display device can be provided.
- a highly reliable display device can be provided.
- a large display device can be provided.
- a display device with high resolution can be provided.
- a display device with high productivity can be provided.
- a display device with high display quality can be provided.
- FIG. 1A and 1B are cross-sectional views showing an example of a display device.
- 2A and 2B are cross-sectional views showing an example of a display device.
- FIG. 3 is a cross-sectional view showing an example of the display device.
- 4A to 4C are cross-sectional views showing an example of a light emitting device.
- FIGS. 5A and 5B are diagrams illustrating a light emitting region of a light emitting device.
- FIG. 5C is a diagram illustrating the normalized brightness of a light emitting device over time.
- 6A and 6B are diagrams for explaining a light emitting region of a light emitting device.
- FIG. 7A to FIG. 7D are diagrams for explaining the concentration of the organometallic complex in the electron transport layer.
- FIG. 8 is a perspective view showing an example of a display device.
- 9A and 9B are cross-sectional views showing an example of a display device.
- FIG. 10A is a cross-sectional view showing an example of a display device.
- FIG. 10B is a cross-sectional view showing an example of a transistor.
- FIG. 11A is a block diagram showing an example of a pixel.
- Figure 11B is a circuit diagram showing an example of a pixel circuit. ⁇ 0 2020/174305
- FIG. 128 to FIG. 120 are cross-sectional views for explaining the method for manufacturing the second layer.
- FIG. 13 is a conceptual diagram illustrating a droplet discharge device.
- 148 to 140 are diagrams showing examples of electronic devices.
- FIG. 158 to FIG. 15F are diagrams showing examples of electronic devices.
- FIG. 16 is a diagram showing an example of a television device.
- FIG. 173 is a diagram showing the structure of the light emitting device of the example.
- Figure 18 is a diagram showing the current density-voltage characteristics of an electronic-only device.
- FIG. 19 is a diagram showing the frequency characteristic of the calculated capacitance ⁇ of ⁇ !'! :Otsu 1 q (1 :1) at a DC power supply of 7.0 V.
- FIG. 20 is a diagram showing a frequency characteristic of ⁇ 3 of ⁇ A D N: Otsu 1 q (1:1) at a DC voltage of 7.0 V.
- FIG. 21 is a diagram showing electric field strength-dependent characteristics of electron mobility in each organic compound.
- FIG. 228 to FIG. 220 are top views showing an example of a pixel layout.
- FIG. 23 is a diagram showing luminance-current density characteristics.
- FIG. 24 is a diagram showing a luminance-voltage characteristic.
- FIG. 25 is a diagram showing current efficiency-luminance characteristics.
- FIG. 26 is a diagram showing current density-voltage characteristics.
- FIG. 27 is a diagram showing a light emitting spectrum.
- FIG. 28 is a diagram showing luminance-current density characteristics.
- FIG. 29 is a diagram showing a luminance-voltage characteristic.
- FIG. 30 is a diagram showing current efficiency-luminance characteristics.
- FIG. 31 is a diagram showing a current density-voltage characteristic.
- FIG. 32 is a diagram showing a light emitting spectrum.
- FIG. 33 is a diagram showing luminance-current density characteristics.
- FIG. 34 is a diagram showing a luminance-voltage characteristic.
- FIG. 35 is a diagram showing current efficiency-luminance characteristics.
- FIG. 36 is a diagram showing current density-voltage characteristics.
- FIG. 37 is a diagram showing a light emitting spectrum.
- FIG. 38 shows the result of the reliability test.
- Figure 39 shows the results of the reliability test.
- FIG. 40 is a diagram showing the result of the reliability test.
- FIG. 41 is a diagram showing luminance-current density characteristics.
- FIG. 42 is a diagram showing luminance-voltage characteristics.
- FIG. 43 is a diagram showing current efficiency-luminance characteristics.
- FIG. 44 is a diagram showing current density-voltage characteristics.
- FIG. 45 is a diagram showing a light emitting spectrum.
- FIG. 46 is a diagram showing luminance-current density characteristics.
- FIG. 47 is a diagram showing luminance-voltage characteristics. ⁇ 0 2020/174305 ⁇ (: 1'2020/051228 Figure 48 shows the current efficiency-luminance characteristics.
- FIG. 49 is a diagram showing current density-voltage characteristics.
- FIG. 50 is a diagram showing a light emitting spectrum.
- FIG. 51 is a diagram showing luminance-current density characteristics.
- FIG. 52 is a diagram showing luminance-voltage characteristics.
- FIG. 53 is a diagram showing current efficiency-luminance characteristics.
- FIG. 54 is a diagram showing current density-voltage characteristics.
- FIG. 55 is a diagram showing a light emitting spectrum.
- Figure 56 shows the results of the reliability test.
- FIG. 57 is a diagram showing the result of the reliability test.
- FIG. 58 shows the results of the reliability test.
- FIG. 59 shows the results of the reliability test.
- film and “layer” can be interchanged with each other depending on the case or circumstances.
- conductive layer can be changed to the term “conductive film”.
- insulating film can be changed to the term “insulating layer”.
- the display device of this embodiment has a light-emitting device in the display portion and can display an image on the display portion.
- an EL device such as an OLED (organic light emitting diode) or a QLED (quantum dot dot light emitting diode).
- OLED organic light emitting diode
- QLED quantum dot dot light emitting diode
- a color-coding method is applied to the colorization method of the display device of this embodiment.
- the color coating method is used for a small-sized display device, the metal mask alignment accuracy can be improved, and the yield of the color coating can be increased, which is preferable.
- a large-sized display device can have a relatively low definition, it is advantageous in that a separate-type light emitting device is used.
- the light emitting devices included in the sub-pixels of the respective colors have different light emitting layers. It is preferable that the light emitting layers of each light emitting device are separated from each other. Note that when the definition of the display device is high, the light-emitting layers included in each light-emitting device may have portions overlapping with each other.
- the display device of this embodiment includes a top emission type that emits light in a direction opposite to the substrate on which the light emitting device is formed, a bottom emission type that emits light to the side of the substrate on which the light emitting device is formed, and a double-sided type. It may be any of the dual emission type that emits light to.
- the light emitting device preferably employs a microcavity structure.
- another layer for example, a hole transport layer
- these layers are common to the light emitting devices of the respective colors.
- the display device of this embodiment has a light-emitting device having a structure in which holes are easily injected into the light-emitting layer and electrons are hardly injected into the light-emitting layer. Holes are easily injected from the hole injection layer and the hole transport layer, and the amount of electrons injected from the electron transport layer to the light emitting layer is suppressed, so that the light emitting layer is in an electron-rich state. Can be suppressed. Then, as the time elapses, electrons are injected into the light emitting layer to increase the brightness, and the increase in the brightness can offset the initial deterioration. By using a light-emitting device that suppresses initial deterioration and has a very long driving life, the life of the display device can be extended and reliability can be improved. The configuration of the light emitting device will be described later with reference to FIGS.
- Figs. 1 to 3 show examples of the configuration of the display device.
- the configuration of the light emitting device illustrated in FIGS. 4 to 7 is applied to at least one light emitting device.
- Figure 18 shows a cross-sectional view of the display device 108.
- the display device 108 includes a light emitting device 1 90 which emits red light 21 scale, a light emitting device 1 900 which emits green light 210, and a light emitting device 1908 which emits blue light 218.
- the light emitting device 1 90 scale has a pixel electrode 191, an optical adjustment layer 199 scale, a buffer layer 192 scale, a light emitting layer 193 scale, a buffer layer 194 scale, and a common electrode 115.
- the light-emitting layer 193 includes an organic compound that emits red light.
- the light emitting device 1900 has a pixel electrode 191, an optical adjustment layer 1990, a buffer layer 192, a light emitting layer 1930, a buffer layer 194, and a common electrode 115.
- the light emitting layer 1930 has an organic compound which emits green light.
- the light emitting device 1908 has a pixel electrode 191, an optical adjustment layer 1998, a buffer layer 1928, a light emitting layer 1938, a buffer layer 1948, and a common electrode 115.
- the light-emitting layer 1938 has an organic compound which emits blue light.
- the configuration of the light emitting device illustrated in FIGS. 4 to 7 is applied to at least one of the light emitting device 1 90 scale, the light emitting device 1 900, and the light emitting device 1 908.
- the light emitting layer 1 938, the buffer layer 1 94 scale, the buffer layer 1 940, the buffer layer 1 948, and the common electrode 115 may each have a single-layer structure or a laminated structure.
- the pixel electrode 191 is located on the insulating layer 214. The end of the pixel electrode 191 is covered with the partition wall 2 16. The pixel electrodes 191 are electrically insulated from each other by partition walls 216 (also referred to as electrically separated).
- An organic insulating film is suitable for the partition 216.
- Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Etc.
- the buffer layer 192 is located on the pixel electrode 1 91.
- the light emitting layer 193 overlaps with the pixel electrode 191 via the buffer layer 192.
- the buffer layer 194 is located on the light emitting layer 193.
- the light emitting layer 193 overlaps with the common electrode 115 via the buffer layer 194.
- the buffer layer 192 is a hole injection layer and a hole transport layer. ⁇ 0 2020/174305 It can have one or both of the transport layer (: 1'2020/051228.
- the buffer layer 194 can have one or both of the electron injection layer and the electron transport layer.
- the common electrode 1 15 is a layer commonly used by the light emitting devices 1 90 of the respective colors.
- the display device 108 has a light-emitting device 190, a transistor 42, and the like between a pair of substrates (the substrate 15 1 and the substrate 15 2 ).
- the buffer layer 192, the light emitting layer 193, and the buffer layer 194, which are located between the pixel electrode 191 and the common electrode 115, respectively, are £O layers.
- the pixel electrode 1 91 preferably has a function of reflecting visible light.
- the common electrode 115 has a function of transmitting visible light.
- the light emitting device included in the display device of this embodiment has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting device has an electrode having a property of transmitting and reflecting visible light (semi-transmissive/semi-reflective electrode), and the other of the pair of electrodes having a property of reflecting visible light. It is preferable to have (reflection electrode). Since the light emitting device has the microcavity structure, the light emitted from the light emitting layer can resonate between both electrodes, and the light emitted from the light emitting device can be strengthened.
- the semi-transmissive/semi-reflective electrode may have a laminated structure of a reflective electrode and an electrode having a transparency to visible light (also referred to as a transparent electrode).
- the reflective electrode which functions as a part of the semi-transmissive/semi-reflective electrode, may be referred to as a pixel electrode or a common electrode
- the transparent electrode may be referred to as an optical adjustment layer. It can be said that the layer) also has a function as a pixel electrode or a common electrode.
- the light transmittance of the transparent electrode is 40% or more.
- a light-emitting device may include visible light (light having a wavelength of 4 0 0 11 1x1 or more and less than 7 5 0 11 1x1) and near-infrared light (light having a wavelength of 7 5 0 11 1x1 or more and 1 3 0 0 11 1x1 or less). It is preferable to use electrodes each having a transmittance of 40% or more.
- the reflectance of visible light and near infrared light of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
- the reflectance of visible light and near-infrared light of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. Further, the resistivity of these electrodes, 1 X 1 0- 2 0 or less.
- the optical adjustment layer 1 999 is provided over the pixel electrode 1 91; however, the optical adjustment layer 1 999 may not be provided.
- the buffer layer 192 or the buffer layer 194 may have a function as an optical adjustment layer. By making the thicknesses of the buffer layer 192 and the buffer layer 194 different, light of a specific color can be intensified and extracted in each light-emitting device.
- the semi-transmissive/semi-reflective electrode has a laminated structure of a reflective electrode and a transparent electrode, the optical distance between the pair of electrodes indicates the optical distance between the pair of reflective electrodes.
- the light emitting device 190 has a function of emitting visible light. Specifically, the light emitting device 190 is a pixel ⁇ 02020/174305 This is an electric field light emitting device that emits light to the substrate 152 side by applying a voltage between the electrode (: 1'2020/051228 electrode 191 and the common electrode 115).
- the pixel electrode 191 is electrically connected to a source or a drain of the transistor 42 through an opening provided in the insulating layer 214.
- the transistor 42 has a function of controlling driving of the light emitting device 190.
- Each of the light emitting devices 190 is preferably covered with a protective layer 195.
- a protective layer 195 is provided in contact with the common electrode 115.
- impurities such as water can be prevented from entering the light-emitting device 190 and the reliability of the light-emitting device 190 can be improved.
- the protective layer 195 and the substrate 155 are attached to each other by the adhesive layer 142.
- the light shielding layer a material that blocks light emission from the light emitting device can be used.
- Shading layer It is preferable to absorb visible light.
- the black matrix can be formed by using, for example, a metal material, or a resin material containing a pigment (such as carbon black) or a dye.
- the light-shielding layer 1 ⁇ may have a laminated structure of a red color filter, a green color filter, and a blue color filter.
- Figure 18 shows a cross-sectional view of the display device 108. Note that in the following description of the display device, description of the same configuration as the display device described above may be omitted.
- the display device 108 is different from the display device 108 in that the red light emitting device 1 90 scale and the green light emitting device 1900 have a common layer 18 2 and a common layer 184.
- FIG. 18 illustrates an example in which the light-emitting device 1 90 scale and the light-emitting device 1 900 have the common layer 182 and the common layer 184
- the display device of one embodiment of the present invention is a light-emitting device 1 90 scale and a light-emitting device 1 90
- the circle may have only the common layer 182 or the common layer 184.
- the common layer 182 is located between the pixel electrode 191 and the light emitting layer 193 scale, and between the pixel electrode 191 and the light emitting layer 1930.
- the common layer 184 is located between the light emitting layer 193 scale and the common electrode 1 15 and between the light emitting layer 193 0 and the common electrode 1 15.
- the common layer 182 and the common layer 184 may each have a single-layer structure or a laminated structure. ⁇ 02020/174305 ⁇ (: 1'2020/051228
- the common layer 182 for example, one or both of a hole injection layer and a hole transport layer can be formed.
- the common layer 184 for example, one or both of an electron injection layer and an electron transport layer can be formed.
- the light-emitting device 1 90 scale and the light-emitting device 1900 have a pixel electrode 191 and a common layer 182, a common layer 182 and a light emitting layer, a light emitting layer and a common layer 184, and A buffer layer may be provided at least at one position between the common layer 184 and the common electrode 115.
- the buffer layer for example, at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be formed.
- the structure of the light-emitting device illustrated in FIGS. 4 to 7 is applied to the light-emitting device 1903.
- the configurations of the light emitting device illustrated in FIGS. 4 to 7 may be applied to both the light emitting device 190 scale and the light emitting device 1900.
- the configuration of the light emitting device illustrated in FIGS. 4 to 7 is applied to one of the light emitting device 1 90 scale or the light emitting device 1 90 0 and the light emitting device 1 908, the light emitting device 1 90 scale is used.
- one of the light emitting devices 1900 and the light emitting device 1908 have a common layer 182 and a common layer 184.
- the configurations of the common layer 182 and the common layer 184 apply the configurations of the light emitting device illustrated in FIGS. 4 to 7.
- Figure 28 shows a cross-sectional view of the display device 10(3.
- the display device 10 ( 3 is a display device 10 8 in that the red light emitting device 1900 scale, the green light emitting device 1900, and the blue light emitting device 1903 have a common layer 1 12 and a common layer 1 14. Different from
- the red light emitting device 1 90 scale, the green light emitting device 1 900, and the blue light emitting device 1 908 preferably have one or more layers commonly used (common layer). Accordingly, the display device can be manufactured with a small number of manufacturing steps.
- FIG. 28 shows an example in which the light-emitting devices of each color have the common layer 1 12 and the common layer 114.
- the light-emitting device of each color has only the common layer 1 12 or Alternatively, the configuration may include only the common layer 114.
- the common layer 1 12 is located between the pixel electrode 191 and the light emitting layer of each color.
- the common layer 114 is located between the light emitting layer of each color and the common electrode 115. ⁇ 02020/174305 ⁇ (: 1'2020/051228
- the common layer 1 12 and the common layer 114 may each have a single-layer structure or a laminated structure.
- the common layer 112 for example, one or both of a hole injection layer and a hole transport layer can be formed.
- the common layer 114 for example, one or both of an electron injection layer and an electron transport layer can be formed.
- Each light emitting device includes a pixel electrode 191 and a common layer 1 12; a common layer 1 12 and a light emitting layer; a light emitting layer and a common layer 114; and a common layer 114.
- a buffer layer may be provided at least at one position between the common electrode 115 and the common electrode 115.
- the buffer layer for example, at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be formed.
- the configuration of the light emitting device illustrated in FIGS. 4 to 7 is applied to each light emitting device.
- the structures of the common layer 112 and the common layer 114 are the same as those of the light emitting device illustrated in FIGS. 4 to 7.
- the light emitting substances contained in the light emitting layer 193 scale, the light emitting layer 1 930, and the light emitting layer 1 933 are fluorescent light emitting substances, respectively. This can extend the life of the light emitting device.
- the light-emitting substances included in the light-emitting layer 193 scale and the light-emitting layer 193° are phosphorescent light-emitting substances and the light-emitting substance included in the light-emitting layer 1933 is a fluorescent light-emitting substance.
- Figure 23 shows a cross-sectional view of the display device 100.
- the display device 100 differs from the display device 100 in that the display device 100 does not include the substrate 151 and the substrate 152, but includes the substrate 153, the substrate 154, the adhesive layer 155, and the insulating layer 212.
- the substrate 1 53 and the insulating layer 21 2 are attached to each other with an adhesive layer 1 55.
- the substrate 154 and the protective layer 195 are attached to each other with an adhesive layer 142.
- the display device 100 has a structure manufactured by transferring the insulating layer 212, the transistor 42, the light-emitting device of each color, and the like formed over the manufacturing substrate onto the substrate 153. It is preferable that each of the substrate 153 and the substrate 154 has a flexible flexure. As a result, the flexibility of the display device 100 can be improved. For example, it is preferable to use a resin for each of the substrate 153 and the substrate 154.
- polyester resins such as polyethylene terephthalate (£ D) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethylmethacrylate resin, polycarbonate ( ⁇ Resin, polyether ⁇ 02020/174305 Stable (: 1'2020/051228 Sulfone (£3) resin, Polyamide resin (nylon, aramid, etc.), Polysiloxane resin, Suction mouth olefin resin, Polystyrene resin, Polyamide imid resin, Polyurethane resin Polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, resin, cellulose nanofiber, etc. can be used for one or both of substrate 1 5 3 and substrate 1 5 4. It is also possible to use glass having such a thickness as to have flexibility.
- PEN polyethylene terephthalate
- PEN polyethylene naphthalate
- polyacrylonitrile resin acrylic resin
- a film having high optical isotropy may be used for the substrate included in the display device of this embodiment.
- the film having high optical isotropy include triacetyl cellulose (Chohachi (3, also known as cellulose triacetate) film, cycloolefin polymer ( ⁇ 30) film, cycloolefin copolymer (000 film, and acrylic film).
- Figure 3 shows a cross-sectional view of the display device 10.
- the display device 100 £ differs from the display device 100 in that it is a bottom emission type.
- the pixel electrode 191 has a function of transmitting visible light.
- the common electrode 115 preferably has a function of reflecting visible light.
- the transistor 42 is preferably provided in a position which does not overlap with the light emitting region of the light emitting device.
- the substrate 15 2 is provided on the protective layer 195 via the adhesive layer 1 42, but the adhesive layer 142 and the substrate 15 2 may not be provided.
- the light-emitting device shown in FIG. 48 has an anode 101, a second layer 103, and a cathode 102.
- the light emitting device may have an optical adjustment layer.
- the anode 10 1, the cathode 102, the hole injection layer 1 2 1, the hole transport layer 122, the light emitting layer 1 23, the electron transport layer 1 2 4, and the electron injection layer 125 are each a single layer structure. It may have a laminated structure.
- the hole-transporting layer 122 included in the light-emitting device shown in FIGS. 43 and 40 includes a hole-transporting layer 1 223 on the hole-injecting layer 1 21 side and a hole-transporting layer 1 2213 on the light-emitting layer 1 23 side. It has a two-layer structure.
- the electron-transporting layer 124 included in the light-emitting device shown in FIG. It is a structure. ⁇ 02020/174305 ?1/162020/051228
- a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like can be appropriately used as a material for forming the pair of electrodes of the light emitting device.
- 1 11—! Oxide also called 1-chome 0
- I Oxides and I 11 to 11 oxides may be mentioned.
- metals such as silver ( 8 ⁇ ), yttrium (V), neodymium (N ⁇ 1), and alloys containing appropriate combinations thereof.
- elements belonging to Group 2 for example, lithium (B, cesium ( ⁇ 8), calcium , Rare earth metals such as strontium (! ⁇ )), europium (£11), ytterbium ( ⁇ 13), alloys containing these in an appropriate combination, and graphene can be used.
- a reflective electrode and a semi-transmissive/semi-reflective electrode are used. Therefore, one or more desired conductive materials can be used to form a single layer or a laminate.
- a sputtering method or a vacuum evaporation method can be used for manufacturing the electrode.
- the hole injection layer 1 2 1 has an electron accepting material and a hole transporting material.
- the electron accepting material exhibits an electron accepting property with respect to the hole transporting material.
- the highest occupied orbital level (HOMO level) of the hole transporting material is preferably relatively low (deep). Specifically, it is preferable that the HOMO_ position of the hole transporting material is not less than 5.76 V and not more than 15.46 V. The relatively low HOMO_ position of the hole transporting material facilitates injection of holes into the hole transporting layer 122, which is preferable.
- an organic compound having an electron-withdrawing group in particular, a halogen group such as a fluoro group or a cyano group
- a halogen group such as a fluoro group or a cyano group
- Examples of the electron-accepting material include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F 4 -TCNQ), chloranil, 2, 3, 6, 7, 10, 1 1 Hexa Cyan 1, 4, 5, 5, 8, 9, 1 2—Hexaazatriphenylene (abbreviation: : ⁇ Haccho 10!'!), 1, 3, 4, 5, 7, 8—Hexa Fluorotetracyanonaphthoquinodimethane (abbreviation: F 6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2 —Ylidene) Malononitrile and the like can be mentioned.
- F 4 -TCNQ 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane
- chloranil 2, 3, 6, 7, 10, 1 1 Hexa Cyan 1, 4, 5, 5, 8, 9, 1
- complex original like HAT—CN ⁇ 02020/174305 A compound in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of (: 1'2020/051228 molecules is preferable because it is thermally stable.
- Radialene derivatives having a halogen group or a cyano group are preferred because they have a high electron accepting property.
- Radialene derivatives having an electron-withdrawing group include, for example, ⁇ , ⁇ ', ⁇ I 1,2,3-Cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], ⁇ ;, ⁇ ', ⁇ ''I 1,2,3-Cyclopropanetriyl Lidentris [2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], ⁇ ;, ⁇ ', ⁇ , 1,1,2,3-cyclopropanetriiridintris [2,3, 4, 5, 6-pentafluorobenzeneacetonitrile] and the like.
- the hole-transporting material has a higher hole-transporting property than electrons.
- the hole transporting material preferably has at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton.
- the hole-transporting material is an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic compound in which a 9-fluorenyl group is bonded to the amine nitrogen via an arylene group. It may be a group monoamine.
- the hole-transporting material has an X,X bis(4 biphenyl)amino group because a light-emitting device having a long life can be manufactured.
- Examples of the hole-transporting material include N-(4-biphenyl)-1,6,X-diphenylbenzo[13]naphtho[1,2 - ⁇ 1]furan 8-amine (abbreviation:: 811 £8) : 8?), 1 ⁇ , 1 ⁇ —bis (4-biphenyl) — 6-phenylbenzo [13] naphtho [1, 2- ⁇ 1] furan 8-amine (abbreviation: :88 8:811 ), 4, 4'-bis (6-phenylbenzo [13] naphtho [1, 2- ⁇ 1] furan 8-yl) 1 4''-phenyltriphenylamine (abbreviation) , 1 ⁇ , 1 ⁇ -bis (4-biphenyl) benz [13] naphtho [1, 2- ⁇ 1] furan 6-amine (abbreviation: :88 8:811 (6)), 1 ⁇ , (4-biphenyl) benzo [13] naphtho [1,
- N66 (9-phenyl-9-carbazol-3-yl) phenyl] spiro 9,9'-bifluoren-2-amine (abbreviation: PCBASF), 1 ⁇ — (1,1'-biphenyl 4-inore) [4— (9—phenynore 9—canolebasoneol 3—yl)phenyl)—9 H—fluoren-2-amine (abbreviation: Etc.
- the hole transport layer 122 is a layer that transports the holes injected by the hole injection layer 121 to the light emitting layer 123.
- the hole transport layer 122 has a hole transport material. Used for the hole transport layer 122 and for the hole injection layer 121. ⁇ 02020/174305 It is possible to use a hole-transporting material capable of forming a hole (: 1'2020/051228. When the hole-transporting layer 122 has a laminated structure, the hole-transporting layer on the side of the light-emitting layer 123 is transported.
- the layer 12213 preferably has a function as an electron blocking layer.
- the HOMO level of the hole transporting material used for the hole transporting layer 122 is preferably lower than the HOMO level of the hole transporting material used for the hole injecting layer 1 21.
- the difference between the HOMO_ level of the hole transporting material used for the hole transporting layer 122 and the HOMO level of the hole transporting material used for the hole injecting layer 1 21 is within 0.26 V.
- the hole-transporting material used for the hole-injecting layer 1 21 and the hole-transporting material used for the hole-transporting layer 122 be the same, since holes can be injected smoothly.
- the HOMO level of the hole transport material used for the hole transport layer 12213 formed on the light emitting layer 123 side is the hole injection layer 1221 side. It is preferably lower than the HOMO_ position of the hole-transporting material used for the hole-transporting layer 1223 formed in FIG. Further, the difference in HOMO level between the two hole transporting materials is preferably within 0.26 V. Since the HOMO_ position of the hole-transporting material used for the hole-injection layer 1 2 1 and the hole-transport layer 1 22 having a laminated structure has the above relationship, hole injection into each layer is smooth. It is possible to prevent an increase in driving voltage and an insufficient number of holes in the light emitting layer 123.
- the hole-transporting material used in the hole-injecting layer 1 21 and the hole-transporting layer 122 having a laminated structure preferably has a hole-transporting skeleton.
- a hole-transporting skeleton a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton, in which the HOM level of the hole-transporting material does not become too high (shallow), are preferable.
- the hole-transporting property of the hole-transporting material used for the hole-injecting layer 1 2 1 and the hole-transporting layer 1 22 having a laminated structure is common to adjacent layers (especially dibenzofuran skeleton). ), the injection of holes becomes smooth, which is preferable.
- hole-transporting materials used for the hole-injection layer 1 2 1 and the hole-transporting layer 1 22 having a laminated structure are the same in the adjacent layers, holes in the layer adjacent in the direction of the cathode 10 2 It is preferable because the injection becomes smoother.
- the light emitting layer is a layer containing a light emitting substance.
- the emissive layer can have one or more emissive materials.
- As the light-emitting substance a substance that emits light of blue, purple, blue-violet, green, yellow-green, yellow, orange, red, or the like is used as appropriate. Alternatively, a substance that emits near infrared light can be used as the light-emitting substance.
- the light emitting layer may have one or more kinds of organic compounds (host material, assist material, etc.) in addition to the light emitting substance (gest material).
- the one or more kinds of organic compounds one or both of the hole transporting material and the electron transporting material described in the present embodiment can be used.
- a bipolar material may be used as one kind or a plurality of kinds of organic compounds.
- the light-emitting substance that can be used for the light-emitting layer, and singlet excitation energy in the visible light region can be used.
- ⁇ 02020/174305 ?1/162020/051228 Use a luminescent material that converts light emission in the region or near-infrared light region, or a light-emitting substance that converts triplet excitation energy into light emission in the visible light region or near-infrared light region be able to.
- luminescent substances that convert singlet excitation energy into luminescence include fluorescent luminescent substances.
- fluorescent luminescent substances examples thereof include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives. , Quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives and the like.
- the pyrene derivative is preferable because it has a high emission quantum yield.
- pyrene derivative examples include 1 ⁇ ,-bis(3-methylphenyl)-l ⁇ ,1 ⁇ '-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine( Abbreviations: 1, 6 mMe mFLPAP rn), Diphenyl 1 ⁇ , 1 ⁇ '-bis [4— (9-phenyl 9H-fluoren 9-yl)phenyl] 1, 6-diamine (abbreviation: 1, 6 FLPAP rn) , N, N ⁇ — Bis (dibenzofuran 2-yl) 1 1 ⁇ , 1 ⁇ '-diphenylpyrene-1, 6-diamine (abbreviation: 1, 6 F r AP r 11), 1 ⁇ ,'-bis ( Dibenzothiophene-2-yl) 1 ⁇ , 1 ⁇ '-diphenylpyrene-1, 6-diamine (abbreviation: 1, 6-chome 11-8?
- Triphenyl-1,4-phenylenediamine (abbreviation: 0:8:8), 1 ⁇ ,9-diphenyl X — [4-phenyl]-9H-carbazole-3-amine (abbreviated) —Diphenyl-2-anthryl)phenyl]
- Examples of the luminescent substance that converts triplet excitation energy into luminescence include a phosphorescent luminescent substance and a thermally activated delayed light (Thermal l l y a c t i v a t e d d e l a y e d f l u o r e s c e n c e :TADF) material.
- a thermally activated delayed light Thermal l l y a c t i v a t e d d e l a y e d f l u o r e s c e n c e :TADF
- Examples of the phosphorescent substance include an organometallic complex (especially iridium complex) having a 4 H-triazole skeleton, a 1 H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or an electron withdrawing group.
- Examples of the phosphorescent light-emitting substance which exhibits blue or green and has a peak wavelength of the emission spectrum of 450 nm or more and 570 nm or less include the following substances.
- Examples of the phosphorescent light-emitting substance which exhibits green or yellow and has a peak wavelength of the emission spectrum of 495 nm or more and 590 nm or less include the following substances. ⁇ 02020/174305 ?1/162020/051228
- tris (4-methyl-6-phenylpyrimidinato) iridium (III) (abbreviation: [1 (1x1 1x1) 3 ])
- tris (4-butyl-6-phenylpyrimidinato) iridium (III) ( Abbreviation: [1 (8 11 111) 3 ])
- (Acetylacetonato) bis (6-methyl-4-phenylphenylimidinato) Iridium (III) (abbreviation: [I! ⁇ (1X1 1X1) 2 (& ⁇ & ⁇ )) ])
- (Acetylacetonato) Bis (6—!-Butyl-4—phenylpyrimidinato) Iridium (III) (abbreviation: [1 ⁇ (Acetylacetonate)
- An organometallic iridium complex having a pyridine skeleton such as bis(2,4-diphenyl-1,3,-xazolato ⁇ 2 ') iridium (III) acetylacetonate (abbreviation: [I ( ⁇ 1 ⁇ ) 2 (& ⁇ & ⁇ )]), bis ⁇ 2-[4, 1 (perfluorophenyl) phenyl] pyridinato 1 ⁇ , 0 2' ⁇ Iridium (III) acetylacetonate (abbreviation: [1 (1 PF—!!)) 2 (, a ⁇ a .) ]), bis(2-phenylbenzothiazolate 1 ⁇ , ⁇ 2 ') Iridium (III) acetylacetonato (abbreviation: [1 (13 1:) 2 (3 03 (:)]]) etc.
- organometallic complexes of tris (acetyl acetonato) (monoph)
- Examples of the phosphorescent light-emitting substance which exhibits yellow or red and has a peak wavelength of the emission spectrum of 570111x1 or more and 750111x1 or less include the following substances. ⁇ 02020/174305 ?1/162020/051228
- the organic compound (host material, assist material, etc.) used for the light emitting layer one or more kinds of substances having an energy gap larger than that of the light emitting substance can be selected and used. ⁇ 02020/174305 ?1/162020/051228
- organic compound used in combination with the fluorescent light-emitting substance it is preferable to use an organic compound having a large energy level in the singlet excited state and a small energy level in the triplet excited state.
- Examples of the organic compound that can be used in combination with the fluorescent substance include a fused polycyclic aromatic compound such as an anthracene derivative, a tetracene derivative, a phenanthrene derivative, a pyrene derivative, a chrysene derivative, and a dibenzo[,]chrysene derivative. ..
- organic compound (host material) used in combination with the fluorescent substance examples include 9-phenyl-3-[4—(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: ⁇ ).
- Triphenylamine (abbreviation: , ⁇ 808, 808, 1 ⁇ , 9—diphenyl 1 ⁇ —
- an organic compound having a triplet excitation energy larger than the triplet excitation energy (energy difference between the ground state and the triplet excited state) of the light emitting substance is selected. do it.
- organic compounds that form an exciplex for example, a first host material, a second host material (or an assist material), and the like
- these organic compounds are used in combination with a light-emitting substance. It is preferably used by mixing with a phosphorescent substance (particularly an organometallic complex).
- ExTET Ex c i p l e x — T r i p l e t En e r g y T r a n s f e r
- an exciplex is easily formed and a compound that easily accepts holes (hole transporting material) and a compound that easily accepts electrons (electron transporting material). Is particularly preferred.
- the H OMO_ position of the hole transporting material is equal to or higher than the HOMO_ position of the electron transporting material.
- the LUMO_ position (lowest unoccupied orbital position) of the hole transporting material is preferably a value equal to or higher than the LUMO_ position of the electron transporting material.
- the LUMO_ and HOMO_ positions of a material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.
- the formation of the exciplex can be performed by comparing, for example, the light-emission spectrum of the hole-transporting material, the light-emission spectrum of the electron-transporting material, and the light-emission spectrum of the mixed film obtained by mixing these materials. This can be confirmed by observing the phenomenon in which the emission spectrum of is shifted to the longer wavelength side (or has a new peak on the longer wavelength side) than the emission spectrum of each material.
- the transient photoluminescence (PL) of the hole transporting material, the transient PL of the electron transporting material, and the transient PL of the mixed film in which these materials are mixed are compared, and the transient PL life of the mixed film is This can be confirmed by observing the difference in transient response such as having a longer life component than the transient PL life of, or having a larger proportion of delay component.
- the above-mentioned transient P L may be read as transient electroluminescence (EL).
- the formation of the exciplex was confirmed by comparing the transient EL of the hole transporting material, the transient EL of the material having the electron transporting property, and the transient EL of the mixed film thereof, and observing the difference in the transient response. can do.
- Organic compounds that can be used in combination with the phosphorescent substance include aromatic amines (compounds having an aromatic amine skeleton), carbazole derivatives (compounds having a carbazole skeleton), dibenzothiophene derivatives (thiophene derivatives), dibenzofuran.
- Derivatives furan derivatives
- zinc- and aluminum-based metal complexes oxadiazole derivatives
- triazole derivatives triazole derivatives
- benzimidazole derivatives quinoxaline derivatives, dibenzoquinoxaline derivatives, pyrimidine derivatives, triazine derivatives, pyridin derivatives, bipyridine derivatives, phenanthroline Examples include derivatives.
- aromatic amines include the following substances.
- carbazole derivative examples include a bicarbazole derivative (for example, a 3,3'-bicarbazole derivative), an aromatic amine having a carbazolyl group, and the like.
- bicarbazole derivative eg, 3,3′-bicarbazole derivative
- aromatic amine having a carbazolyl group specifically, N-(4-biphenyl)-l ⁇ -(9,9-dimethyl-9-fluoren-2-yl)-l-9-phenyl-9-carbazol-3-amine (abbreviation: PCB i F), PCBB i F, ?066 1 16?, PCBANB, CBNB Lou (9-phenyl-9-carbazol-3-yl) amine (abbreviation: -Bis (9-phenylcarbazol-3-yl) one : ⁇ 1-diphenylbenzene-1,3-diamine (abbreviation: 028), 1 ⁇ , ,'-Triphenyl-1 ⁇ , 1 ⁇ , ,1 ⁇ ,,-Tris (9-phenylcarbazol-3-yl) benzene-1,3,5—Triamine (abbreviation: ⁇ 838), 9,9-Dimethyl 1 ⁇ —phenyl 1 ⁇ — [4— (9-phenyl 9 H-carba
- thiophene derivatives compounds having thiophene skeletons
- furan derivatives compounds having furan skeletons
- 4,4′,4′′-one benzene-1,3,5-triyl)tri
- 2, 8-diphenyl 4 [4— (9-phenyl-9H-fluoren-9-yl) phenyl] dibenzothiophene (abbreviation: 0 8 F) Otsuichi III)
- aromatic amine examples include 4,4′-bis[1 ⁇ — (1—naphthyl)-1 1-phenylamino]biphenyl (abbreviation: NPB or a-NPD), N, N ⁇ — bis ( 3-Methylphenyl)- ⁇ 1 ⁇ '-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: D), 4,4'
- organic compounds having a high hole-transporting property examples include poly (X-vinylcarbazole) (abbreviation: 10), poly (4-vinyltriphenylamine) (abbreviation: chop), poly [1 ⁇ — (4— ⁇ 1 ⁇ '-[4-(4-diphenylamino) phenyl] phenyl- 1 ⁇ '-phenylamino ⁇ phenyl) methacrylamide] (abbreviation: Alternatively, a polymer compound such as poly[!'>!, 1 ⁇ '-bis (4-butylphenyl) 1 1 ⁇ , 1 ⁇ '-bis (phenyl) benzidine] (abbreviation: 0 1 c) can be used. ⁇ 02020/174305 ?1/162020/051228
- zinc- or aluminum-based metal complexes which are organic compounds having a high electron-transporting property, include tris(8-quinolinolato)aluminum(III) (abbreviation: 8 1 q) and tris(4-methyl-8-).
- Quinolinolato) aluminum (III) abbreviation: 8 1 IX! q 3
- >] quinolinato) beryllium (II) abbreviation: 8 8 q 2
- bis [2-(2-benzoxazolyl)phenolato] zinc (II) (abbreviation: ⁇ 1180)
- bis [2-(2-benzothiazolyl) phenol] zinc (II) (abbreviation:
- a metal complex having an oxazole-based or thiazole-based ligand such as Z nBTZ) can be used.
- oxadiazole derivatives triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, and phenanthroline derivatives, which are organic compounds having a high electron-transporting property, include 2-(4-biphenylenyl)-15-(4-6! ⁇ 1;-Butylphenyl) 1, 3,
- heterocyclic compound having a diazine skeleton, the heterocyclic compound having a triazine skeleton, and the heterocyclic compound having a pyridine skeleton which are organic compounds having a high electron transporting property
- examples of the heterocyclic compound having a diazine skeleton, the heterocyclic compound having a triazine skeleton, and the heterocyclic compound having a pyridine skeleton, which are organic compounds having a high electron transporting property include 4, 6-bis [3— ( F ⁇ 02020/174305 ⁇ (:1' 2020/051228 enanthrene-9-yl) phenyl]pyrimidine (abbreviation: 4, 4, 6-bis[3—(4-dibenzophenyl)phenyl]pyrimidine (abbreviation: 4, 61X108) Ding 2 111—II), 4, 6-bis [3— (9 H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4, 61X10
- Poly(2,5-pyridinediyl) (abbreviation: ), poly[(9,9-dihexylfluorene-2,7-diyl) one is an organic compound having a high electron transporting property.
- ⁇ — (Pyridine-3,5-diyl)] (abbreviation: PF—)
- Poly! (9,9-dioctylfluorene-2,7-diyl)
- PF— polymer compound such as ⁇ —(2,2′-bipyridine-6,6′-diyl)] (abbreviation:87).
- the Ding eighty F material £ 1 difference between level and T1s level is small, a material having a function capable of converting the Enerugi from a triplet excited Enerugi to singlet excited Enerugi by reverse intersystem crossing is there. Therefore, triplet excitation energy can be up-converted to singlet excitation energy (reverse intersystem crossing) by a slight thermal energy, and a singlet excited state can be efficiently generated. In addition, triplet excitation energy can be converted into light emission.
- the energy difference between the £-position and the fine-position is 06 V or more and 0.26 V or less, preferably 06 V or more and 0.16 or less.
- delayed fluorescence in the D-880 F material refers to light emission that has a spectrum similar to that of normal fluorescence but has a significantly long lifetime. Its lifetime is 1 0 6 seconds or more, preferably 1 0 one 3 seconds or more.
- the exciplex that forms an excited state with two kinds of substances has an extremely small difference between the £ 1 _ position and the Ding 1 _ position, and is capable of converting triplet excitation energy into singlet excitation energy. It has a function as a material.
- the phosphorescence spectrum observed at low temperature may be used as the index of 1-D position.
- a tangent line is formed at the short wavelength side skirt of the fluorescence spectrum.
- the energy of the wavelength of the outer gauze line is set to £ 1 level, and a tangent line is drawn at the short wavelength side skirt of the phosphorescent spectrum to set the energy of the wavelength of the outer gauze line to the level.
- TADF material examples include fullerene and its derivatives, acridine derivatives such as proflavin, and eosin.
- metal containing magnesium, zinc (1 1 1), cadmium (0 0 1), soot (£ 11), platinum (1), indium (I 11), or palladium ( ⁇ 1) ⁇ 02020/174305 ?1/162020/051228 Porphyrin is an example.
- metal-containing porphyrin include protoporphyrin-tin fluoride complex (abbreviation: S n F 2 (P roto IX) ), mesoporphyrin-tin fluoride complex (abbreviation: £ 11 F 2 (IV!
- a heterocyclic compound having a 71-electron excess heteroaromatic ring and a 71-electron deficient heteroaromatic ring can be used.
- the heterocyclic compound has a 71-electron excess heteroaromatic ring and a 71-electron deficient heteroaromatic ring, both the electron-transporting property and the hole-transporting property are high, which is preferable.
- a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, a pyrazine skeleton, a pyridazine skeleton) and a triazine skeleton are preferable because they are stable and have good reliability.
- a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton have high electron accepting properties and high reliability, which is preferable.
- the acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophenene skeleton, and pyrrole skeleton are stable and have good reliability. It is preferable to have at least one.
- a dibenzofuran skeleton is preferable as the furan skeleton, and a dibenzothiophene skeleton is preferable as the thiophene skeleton.
- an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-19H-carbazole skeleton are particularly preferable.
- 71 electron-rich heteroaromatic ring and 71 electron-deficient heteroaromatic ring are directly bonded to each other, and 71 The electron-accepting properties of the electron-deficient heteroaromatic ring are both strengthened, and the energy difference between the 3 1 _ position (energy level of singlet excited state) and the 1 _ position (energy level of triplet excited state) is small. Therefore, heat-activated delayed fluorescence can be efficiently obtained, which is particularly preferable.
- an aromatic ring having an electron-withdrawing group such as a cyano group bonded thereto may be used.
- an aromatic amine skeleton, a fanazine skeleton, or the like can be used as the electron-deficient skeleton.
- An aromatic ring or a heteroaromatic ring having a nitrile group or a cyano group, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, and a sulfone skeleton can be used.
- a 71-electron-deficient skeleton and a 71-electron-excess skeleton can be used in place of at least one of the 71-electron-deficient heteroaromatic ring and the 71-electron-excess heteroaromatic ring.
- the ADF material When the ADF material is used, it can be used in combination with other organic compounds. In particular, it can be combined with the above-mentioned host material, hole transporting material, and electron transporting material.
- the host material level is preferably higher than the ADF material level. Further, it is preferable that the level 1 of the phosphite material is higher than the level 1 of the TADF material.
- the TADF material may be used as the host material and the fluorescent material may be used as the guest material.
- the triplet excitation energy generated in the ADF material is converted into singlet excitation energy due to the intersystem crossing, and the energy is further transferred to the light emitting substance.
- Luminous efficiency can be improved.
- the ADF material functions as an energy donor, and the luminescent material functions as an energy acceptor. Therefore, using the TADF material as the host material is very effective when using the fluorescent material as the guest material.
- the unit of the TADF material is It is preferably higher than the rank. Further, it is preferable that the 1- position of the D-880F material is higher than the position of the fluorescent substance. Therefore, T l _-position of TADF material is preferably higher than the T1 _-position of the fluorescent light-emitting substance.
- D-F material which emits light so as to overlap with the wavelength of the absorption band on the lowest energy side of the fluorescent substance.
- the fluorescent light-emitting substance has a protective group around the luminophore (skeleton causing luminescence) of the fluorescent light-emitting substance.
- the protective group is preferably a substituent having no 71 bond, preferably a saturated hydrocarbon, specifically, an alkyl group having 3 or more and 10 or less carbon atoms, or a substituted or unsubstituted C 3 or more carbon atom. ⁇ 02020/174305 ? €1/162020/051228
- Examples thereof include a cycloalkyl group having 10 or less and a trialkylsilyl group having 3 or more and 10 or less carbon atoms, and more preferably a plurality of protecting groups.
- Substituents that do not have a bond have a poor function of transporting carriers, and therefore they can increase the distance between the ADF material and the fluorophore luminophore without affecting carrier transport or carrier recombination. it can.
- the luminescent group refers to an atomic group (skeleton) that causes light emission in a fluorescent substance.
- the lumophore preferably has a skeleton having 71 bonds, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring.
- the condensed aromatic ring or the condensed heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an atoridone skeleton, a phenoxazine skeleton, and a phenothiazine skeleton.
- a fluorescent light-emitting substance having a naphthalene skeleton, anthracene skeleton, fluorene skeleton, chrysene skeleton, triphenylene skeleton, tetracene skeleton, pyrene skeleton, perylene skeleton, coumarin skeleton, quinacridone skeleton, naphthobisbenzofuran skeleton has a high fluorescence quantum yield. Therefore, it is preferable.
- the electron transport layer 124 is a layer that transports electrons injected from the cathode 102 to the light emitting layer 123.
- the electron transport layer 124 includes an electron transport material.
- An electron-transporting material has a higher electron-transporting property than a hole. It is preferable that the HOMO level of the electron transporting material is not less than 6.6 V.
- the electron-transporting material has an electric field strength of [/. Electron mobility square root that put in 600 of 1 11], 1 10-7. 1 11 2/8 or 5 10- 5. 1 11 is preferably 2/8 or less,
- the electron mobility (electron mobility when the square root of the electric field strength [/ ⁇ 111] is 600) of the electron transporting material with a HOMO_ position of 6.06 V or more used for the electron transporting layer 1 24 is as follows. It is preferably smaller than the electron mobility of the host material used in 23.
- the electron transporting material preferably has an anthracene skeleton, and more preferably has an anthracene skeleton and a heterocyclic skeleton.
- the heterocyclic skeleton is preferably a nitrogen-containing 5-membered ring skeleton.
- the nitrogen-containing 5-membered ring skeleton it is particularly preferable to have a nitrogen-containing 5-membered ring skeleton containing two heteroatoms in the ring such as a pyrazole ring, an imidazole ring, an oxazole ring, and a thiazole ring.
- a part of the electron-transporting material that can be used as the host material, and the substances listed as the materials that can be used as the host material in combination with the fluorescent light-emitting substance are used for the electron-transporting layer 124. You can
- the electron transport layer 124 preferably further contains an organometallic complex of an alkali metal or an alkaline earth metal.
- organic metal complex of an alkali metal or an alkaline earth metal an organic complex of lithium is preferable, and 8-quinolinolatolithium (abbreviation: Otsu 1 q) is particularly preferable.
- the light emitting region 1 2 3 — 1 is limited to a part as shown in Fig. 58. This will increase the burden on the part and accelerate deterioration.
- the electrons pass through the light emitting layer 1 2 3 without being able to recombine, so that the lifetime and the luminous efficiency are reduced.
- the light-emitting region 1 2 3 1 1 is widened as shown in FIG.
- FIGS. 58, 53, 66, and 63 the electrons are shown as 61 and the holes are shown as 11 +.
- the thick solid line is the normalized luminance deterioration curve of the light emitting device of this embodiment
- the thick broken line is the normalized luminance deterioration curve of the comparative light emitting device.
- the light emitting device of the present embodiment and the light emitting device for comparison have different slopes of the deterioration curves of the normalized luminance. Specifically, the slope 0 2 of the deterioration curve of the light emitting device of the present embodiment is smaller than the slope 0 1 of the deterioration curve of the comparative light emitting device.
- the light-emitting device of this embodiment may exhibit a shape having a maximum value in a luminance deterioration curve obtained by a driving test under a condition of constant current density. That is, the deterioration curve of the light-emitting device of one embodiment of the present invention may have a shape having a portion in which the luminance increases with the passage of time.
- a light-emitting device that exhibits such deterioration behavior can offset the so-called initial deterioration, which is a rapid deterioration at the initial stage of driving, by the increase in brightness, and the initial deterioration is small.
- the light emitting device can be provided.
- the light-emitting device of one embodiment of the present invention in which there is a portion where the derivative of the deterioration curve is 0 has small initial deterioration and has a very long life.
- the behavior of such a deterioration curve is that due to the low electron mobility in the electron transport layer 1 2 4, recombination that does not contribute to light emission occurs in the non-radiative recombination region 1 2 4 — 1 It is thought that this is a phenomenon that occurs due to the occurrence of.
- the injection hole of the hole is small in the initial stage of driving, and the electron-transporting property of the electron-transporting layer 1 2 4 is relatively low.
- 3-1 that is, recombination region
- the H OM O level of the electron-transporting material contained in the electron-transporting layer 1 2 4 is relatively high at 16.0 6 V or higher, some of the holes are partially transferred to the electron-transporting layer 1 2 4 4.
- the recombination also occurs in the electron transport layer 1 2 4 and the non-photoemission recombination region 1 2 4 -1 is formed. Since the recombination region reaches the inside of the electron transport layer 1 2 4 as well, the difference between the H OM O levels of the electron transport material and the organometallic complex of the electron transport layer 1 2 4 is 0.26 V. It is preferably within the range.
- Non-radiative recombination region 1 2 4— 1 decreases As a result, the energy of the recombined carriers can be effectively contributed to the light emission, and the brightness increases compared to the initial driving.
- This increase in brightness offsets a sharp decrease in brightness that appears at the beginning of driving the light-emitting device, so-called initial deterioration, so that a light-emitting device with little initial deterioration and a long driving life can be provided.
- the above light-emitting device may be referred to as a Recombination-Site Tailing Ring Injection structure (Re STI structure).
- the light-emitting device of one embodiment of the present invention having the above structure has a long life and high reliability.
- the electron-transporting layer 1 24 may have a concentration gradient, and has a laminated structure of a plurality of layers in which the electron-transporting material and the organic metal complex of an alkali metal or an alkaline earth metal have mutually different mixing ratios. May be
- the magnitude of the mixing ratio can be inferred from the detected amount of atoms and molecules that are protected by time-of-flight secondary ion mass spectrometry (To F— S IMS: T i me — ⁇ f — flightsecondaryion ma ssspectrome try;
- T i me — ⁇ f — flightsecondaryion ma ssspectrome try The large and small values detected by T ⁇ F-SI MS analysis in the portions composed of the same two kinds of materials and having different mixing ratios correspond to the large and small abundance of the atoms and molecules of interest.
- the content of the organometallic complex in the electron transport layer 124 is preferably smaller on the cathode 102 side than on the anode 10 1 side. That is, it is preferable that the electron transport layer 124 is formed so that the concentration of the organometallic complex increases from the cathode 102 side toward the anode 101 side. That is, in the electron transport layer 1 24, there is a portion where the amount of the electron transporting material is less on the light emitting layer 1 2 3 side than the portion where the amount of the electron transporting material is greater. Then, it can be understood that the electron transport layer 124 has a portion where the amount of the organometallic complex is larger on the light emitting layer 1 23 side than the portion where the amount of the organometallic complex is present is smaller.
- the electron mobility in the part where the electron transporting material is abundant is 1 X 1 0 — 7 cm 2 /V when the square root of the electric field strength [V/cm] is 600. s above 5 X 1 0- 5 cm is preferably at most 2 / V s.
- the electron transport layer 1 24 has a laminated structure as shown in FIG. 4C, the electron transport layer 1 24 a formed on the light emitting layer 1 2 3 side and the electron transport layer formed on the electron injection layer 1 2 5 side. It is preferable that the layers 1 24b and 24b have different mixing ratios of the electron transporting material and the organometallic complex.
- the amount of the organic metal complex in the electron transport layer 1 24a is larger than the amount of the organometallic complex in the electron transport layer 1 24b. ⁇ 0 2020/174305 ⁇ (: 1'2020/051228
- the abundance of the electron transporting material in 2 4 3 is preferably smaller than the abundance of the electron transporting material in the electron transporting layer 1 24. Note that these mixing ratios are the same as described above. It can be inferred from the detected amount of atoms and molecules obtained by analysis.
- the electron transport layer 1 2 4 3 may be provided on the light emitting layer 1 2 3 side of the electron transport layer 1 2 4 13 and may be provided between the electron transport layer 1 2 4 3 and the electron transport layer 1 2 4 b. Other layers may be present in.
- the abundance ratio of the electron transport material and the organometallic complex may be continuously changed as shown in FIGS. ..
- the abundance ratio may change stepwise as shown in FIGS.
- a region having a higher concentration of the organometallic complex is provided on the light emitting layer 1 2 3 side than a region where the concentration of the organometallic complex, which is the rate-determining factor of electron mobility, is low. Is essential.
- ToF—S Although the method for estimating the abundance, concentration, and mixing ratio was shown, any method may be used as long as it can be proved by other detection methods.
- the change in carrier balance in the light emitting device of one embodiment of the present invention is considered to be brought about by the change in electron mobility of the electron transport layer 1 2 4.
- a difference in concentration of an alkali metal or alkaline earth metal organometallic complex exists inside the electron-transporting layer 1 2 4.
- the electron transport layer 1 2 4 has a region where the concentration of the organometallic complex is high and a region where the concentration of the organometallic complex is low and the light emitting layer 1 2 3. That is, it has a structure in which the region where the concentration of the organometallic complex is low is located closer to the cathode 102 side than the region where it is high. Since the higher the concentration of the organometallic complex, the higher the electron mobility of the electron transport layer 1 2 4 is, the electron mobility of the electron transport layer 1 2 4 is rate-limited to the region where the concentration is low. It
- the organometallic complex of an alkali metal or an alkaline earth metal is changed from the anode 10 1 side to the cathode 10 2 side (high concentration region) by the voltage. It has been found that it diffuses to the thin area). Since the region where the concentration of the organometallic complex is high exists on the side of the anode 10 1 rather than the region where the concentration is low, the electron mobility of the electron transport layer 1 2 4 is improved with the driving. As a result, the carrier balance is changed inside the light emitting device, the recombination region is moved, and a light emitting device having the above-described deterioration curve shape and a long life can be obtained.
- the light-emitting device of one embodiment of the present invention having the above structure has a very long life.
- the electron injection layer 125 is a layer that enhances the efficiency of injecting electrons from the cathode 102.
- the difference between the value of the work function of the material of the cathode 102 and the value of the L UMO level of the material used for the electron injection layer 1 25 is small (0.56
- Electron injection layer 1 2 5 contains lithium, cesium, lithium fluoride (Otsu 1F), cesium fluoride ( ⁇ 8 ), calcium fluoride (C a F 2 ), 8—quinolinola torithium (abbreviation: Otsu 1 q), 2— (2 —pyridyl) phenoratritium (abbreviation: Otsu 1?), 2— (2 —pyridyl) 1 3 —pyridinola tritium (abbreviation) , 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation:, lithium oxide (Otto 10), alkali metal such as cesium carbonate, alkaline earth metal, or a compound thereof can be used.
- a rare earth metal compound such as erbium fluoride (E r F 3 ) can be used, or an electron can be used in the electron injection layer, for example, calcium and calcium can be used.
- E r F 3 erbium fluoride
- an electron can be used in the electron injection layer, for example, calcium and calcium can be used. Examples thereof include a substance obtained by adding a high concentration of electrons to a mixed oxide of aluminum, etc. It is also possible to use the above-mentioned substances forming the electron transport layer.
- a composite material containing an electron-transporting material and a donor material may be used for the electron-injection layer.
- a composite material is excellent in electron injection property and electron transport property because electrons are generated in the organic compound by the electron donor.
- the organic compound is preferably a material excellent in transporting the generated electrons, and specifically, for example, the electron transporting materials described above (metal complex, heteroaromatic compound, etc.) can be used. ..
- the electron donor may be any substance that exhibits an electron donating property to an organic compound.
- alkali metals, alkaline earth metals and rare earth metals are preferable, and examples thereof include lithium, cesium, magnesium, calcium, erbium and ytterbium.
- alkali metal oxides and alkaline earth metal oxides are preferable, and examples thereof include lithium oxide, calcium oxide, and barium oxide. It is also possible to use a Lewis base such as magnesium oxide.
- an organic compound such as tetrathiafulvalene (abbreviation: TTF) can be used.
- a vacuum process such as an evaporation method or a solution process such as a spin coating method or an inkjet method can be used for manufacturing the light-emitting device of the embodiment of the present invention.
- a physical vapor deposition method such as a sputtering method, an ion plating method, an ion beam vapor deposition method, a molecular beam vapor deposition method, or a vacuum vapor deposition method, a chemical vapor deposition method ( ⁇ method), etc. Can be used.
- vapor deposition method vacuum vapor deposition method, etc.
- coating method dip coating method, die coating method
- Bar coating method spin coating method, spray coating method, etc.
- printing method inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexo (topographic printing) method, gravure method, microcontact method) Method
- the materials of the functional layers constituting the light emitting device are not limited to the above materials.
- a material for the functional layer a high molecular compound (oligomer, dendrimer, polymer, etc.), a medium molecular compound (a compound in the intermediate region between a low molecule and a polymer: a molecular weight of 400 to 400), an inorganic compound (quantum) Dot material etc.) and the like may be used.
- the quantum dot material colloidal quantum dot material, alloy type quantum dot material, core-type quantum dot material, core type quantum dot material and the like can be used.
- Figures 228 to 220 show an example of a pixel layout of a display device. Note that the pixel layout, size, shape, etc. are not limited to these.
- FIGS. 228 to 220 a display device that expresses one color by subpixels of three colors of scale (red), O (green), and 8 (blue) will be described as an example.
- the kind and number of color elements are not limited, and colors other than (eg, white, yellow, cyan, magenta, etc.) may be used.
- the light emitting region of each subpixel is indicated by a dotted line.
- the pixel 5 1 shown in FIG. 2 28, the pixel 5 2 shown in FIG. 2 28, and the pixel 5 3 shown in FIG. 2 2 (3 are all shown in FIG. It is larger than the area of the light emitting region of the pixel.
- the pixel 51 is an example in which the area of the light emitting region of the blue sub-pixel is smaller than the area of the light emitting region of the green sub-pixel and larger than the area of the light emitting region of the red sub-pixel.
- the pixel 52 is an example in which the area of the light emitting region of the blue sub-pixel is the same as the area of the light emitting region of the green sub-pixel, and is larger than the area of the light emitting region of the red sub-pixel.
- Pixel 53 is an example in which the area of the light emitting region of the blue sub-pixel is smaller than the area of the light emitting region of the green sub-pixel and is the same as the area of the light emitting region of the red sub-pixel.
- a light emitting device that emits phosphorescence for the green subpixel and the red subpixel
- a light emitting device that emits fluorescence for the blue subpixel
- a light-emitting device that emits phosphorescence a light-emitting device that emits light with a shorter wavelength has higher triplet excitation energy of the light-emitting substance and the host material, and the absorption edge has a shorter wavelength. So, for example, when a light-emitting device that emits green light and a light-emitting device that emits red light emit phosphorescence, a light-emitting device that emits green light is less reliable than a light-emitting device that emits red light. Tend. Therefore, in a top view, the area of the light emitting region of the light emitting device that emits green light is preferably larger than the area of the light emitting region of the light emitting device that emits red light.
- a plurality of subpixels of the same color may be provided in one pixel.
- the sum of the areas of the light emitting regions of the green sub-pixel is larger than the sum of the areas of the light emitting regions of the red sub-pixel. That is, in one pixel, it is preferable that the sum of the areas of the light emitting regions of the light emitting device that emits green light is larger than the sum of the areas of the light emitting regions of the light emitting device that emits red light.
- the area of the light emitting region may be read as the aperture ratio.
- the light-emitting device that emits blue light emits fluorescence and that the above-mentioned 6-inch structure is applied.
- the initial deterioration of the light emitting device that emits blue light can be suppressed, and the driving life can be made extremely long.
- the area of the light emitting region of the light emitting device that emits blue light is equal to or larger than the area of the light emitting region of the light emitting device that emits red light, and the area of the light emitting region of the light emitting device that emits green light. The following is preferable.
- the sum of the areas of the light emitting regions of the blue sub-pixels is ⁇ 0 2020/174305 ? €1/16 2020/051228 It is preferable that it is equal to or more than the sum of the areas of the light emitting regions of the red sub-pixels and less than or equal to the sum of the areas of the light emitting regions of the green sub-pixels.
- the sum of the areas of the light-emitting regions of the light-emitting device that emits blue light is greater than or equal to the sum of the areas of the light-emitting region of the light-emitting device that emits red light, and the emission area of the light-emitting device that emits green light. It is preferably less than or equal to the sum of the areas of the light regions.
- the light emitting device included in the display device of this embodiment may have a function as a light receiving device.
- the display device of this embodiment may further include a subpixel including a light-receiving device.
- the pixel 54 shown in FIG. 220 has a sub-pixel ⁇ having a light receiving device.
- an organic light emitting diode device as a light emitting device and an organic photodiode as a light receiving device.
- the organic semiconductor device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built in the display device using the organic EL device.
- the layers that can be configured in common can be formed by batch formation. It is possible to suppress an increase in the number of processes. In addition, even if the number of times of film formation is the same, by reducing the layers that are formed only on some devices, the effect of the deviation of the film formation pattern can be reduced, and it can be used as a film formation mask (metal mask, etc.). It is possible to reduce the influence of adhered dust (including small foreign substances called particles). Accordingly, the yield of manufacturing the display device can be increased.
- the layer that the light receiving device and the light emitting device have in common may have different functions in the light emitting device and the light receiving device.
- the display device of the present embodiment can capture an image using the light receiving device.
- imaging can be performed using the entire display portion, and the display device can be used as a scanner (color scanner).
- a scanner color scanner
- an image sensor can be used to acquire data such as a fingerprint, a palm print, or an iris.
- the display device of this embodiment can include a biometric sensor.
- a biometric sensor By incorporating a biometric sensor in the display device, the number of electronic device parts can be reduced compared to when a biometric sensor is provided separately from the display device, and electronic devices can be made smaller and lighter. Is. For example, by providing a light-receiving device on the entire display unit, the area used for authentication can be widened, and the data of multiple fingers can be acquired at one time, thereby enhancing the security level and improving convenience.
- the image sensor can be used to acquire data such as the user's facial expression, eye movements, or changes in pupil diameter.
- data such as the user's facial expression, eye movements, or changes in pupil diameter.
- the display device of the present embodiment can detect the proximity or contact of the object using the light receiving device.
- FIG. 8 shows a perspective view of the display device 100 A
- FIG. 9A shows a cross-sectional view of the display device 100 A.
- the display device 100A has a structure in which a substrate 155 and a substrate 515 are attached to each other.
- the substrate 152 is clearly indicated by a broken line.
- the display device 100A has a display portion 162, a circuit 164, a wiring 1655, and the like.
- FIG. 8 shows an example in which 1 C (integrated circuit) 173 and F PC 172 are mounted on the display device 100A. Therefore, the structure shown in FIG. 8 can be said to be a display module having the display devices 100 A, 1 C, and F PC.
- a scan line driver circuit can be used.
- the wiring 165 has a function of supplying a signal and power to the display portion 162 and the circuit 164.
- the signal and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.
- COG Cho ip On Glass
- CO F Cho ipon Film
- an IC having a scan line driver circuit or a signal line driver circuit can be applied.
- the display device 100A and the display module may be configured without an IC.
- the IC may be mounted on the FPC by the COF method or the like.
- FIG. 9A shows a part of the display device 100 A including the FPC 1 72, a part of the circuit 1 64, a part of the display portion 16 2 and a part of the region including the end portion. An example of a cross section when cut is shown.
- the display device 100 A shown in FIG. 9A includes a transistor 201, a transistor 205, a light emitting device 190 R, a light emitting device 190 G, and a light emitting device 190 between a substrate 151 and a substrate 152. Have B etc.
- the protective layer 1 995 and the substrate 15 2 are adhered to each other via the adhesive layer 1 42.
- a solid sealing structure, a hollow sealing structure, or the like can be applied to the sealing of the light emitting device 190.
- the space 143 surrounded by the substrate 152, the adhesive layer 142, and the substrate 151 is filled with an inert gas (such as nitrogen or argon), and the hollow sealing structure is applied.
- an inert gas such as nitrogen or argon
- the adhesive layer 1 4 2 is provided to overlap with the light emitting device 1 90, ⁇ 02020/174305 ? €1/162020/051228 Good.
- the space 144 surrounded by the substrate 152, the adhesive layer 142, and the substrate 151 may be filled with a resin different from that of the adhesive layer 142.
- the 90-inch light-emitting device consists of the pixel electrode 1 91, the optical adjustment layer 199, the common layer 1 1 2, the light-emitting layer 1 93, the common layer 1 1 4, and the common electrode 1 1 from the insulating layer 2 1 4 side. It has a laminated structure in which 5 layers are laminated in this order.
- the light emitting device 1900 has a pixel electrode 191 from the insulating layer 2 14 side, an optical adjustment layer 1 990, a common layer 1 1 2, a light emitting layer 1 930, a common layer 1 1 4, and a common electrode. It has a laminated structure in which 1 1 5 are laminated in this order.
- the light-emitting device 1 908 includes a pixel electrode 1 91, an optical adjustment layer 1 998, a common layer 1 1 2, a light-emitting layer 1 9 38, a common layer 1 1 4, and a common electrode 1 from the insulating layer 2 14 side. It has a laminated structure in which layers are laminated in the order of 15.
- the pixel electrode 191 is connected to the conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214.
- the end portion of the pixel electrode 1 91 is covered with the partition wall 2 16.
- the pixel electrode 1 91 includes a material that reflects visible light
- the common electrode 1 15 includes a material that transmits visible light.
- the light emitted by the light emitting device 190 is emitted to the substrate 15 2 side.
- the substrate 152 it is preferable to use a material having high transparency to visible light.
- Both the transistor 201 and the transistor 205 are formed over the substrate 151. These transistors can be manufactured using the same material and the same process.
- the insulating layer 2 11, the insulating layer 2 13, the insulating layer 2 15 and the insulating layer 2 1 4 are arranged in this order.
- Part of the insulating layer 211 serves as a gate insulating layer of each transistor.
- Part of the insulating layer 2 13 functions as a gate insulating layer of each transistor.
- the insulating layer 2 15 is provided so as to cover the transistor.
- the insulating layer 2 14 is provided so as to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers that cover the transistor are not limited, and each may be a single layer or two or more layers.
- a material in which impurities such as water and hydrogen do not easily diffuse for at least one insulating layer that covers the transistor.
- an inorganic insulating film as each of the insulating layer 2 11, the insulating layer 2 13, and the insulating layer 2 15.
- an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used.
- hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, neodymium oxide film, etc. ⁇ 0 2020/174305 A (: 1'2020/051228 may be used.
- two or more of the above-mentioned insulating films may be laminated and used.
- the organic insulating film often has a lower barrier property than the inorganic insulating film. Therefore, the organic insulating film preferably has an opening near the end of the display device 108. This can prevent impurities from entering from the end portion of the display device 108 through the organic insulating film. Alternatively, the organic insulating film is formed so that the end portion of the organic insulating film is located inside the end portion of the display device 108 so that the organic insulating film is not exposed at the end portion of the display device 108. May be.
- An organic insulating film is suitable for the insulating layer 2 14 which functions as a flattening layer.
- Materials that can be used for the organic insulating film include acrylic resin, polyimido resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Is mentioned.
- the transistor 201 and the transistor 205 are a conductive layer 2 21 which functions as a gate, an insulating layer 2 11 which functions as a gate insulating layer, a conductive layer 2 2 2 & which functions as a source and a drain, and a conductive layer 2 2 213, a semiconductor layer 2 31, an insulating layer 2 13 functioning as a gate insulating layer, and a conductive layer 2 2 3 functioning as a gate.
- the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film.
- the insulating layer 2 11 is located between the conductive layer 2 21 and the semiconductor layer 2 3 1.
- the insulating layer 2 13 is located between the conductive layer 2 23 and the semiconductor layer 2 3 1.
- the structure of the transistor included in the light-emitting device of this embodiment is not particularly limited.
- a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
- either a top-gate or bottom-gate transistor structure may be used.
- gates may be provided above and below a semiconductor layer in which a channel is formed.
- a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistor 201 and the transistor 205.
- the transistor may be driven by connecting two gates and supplying the same signal to them.
- the threshold voltage of the transistor may be controlled by supplying one of the two gates with a potential for controlling the threshold voltage and the other with a potential for driving.
- crystallinity of a semiconductor material used for a transistor which includes an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially having a crystalline region). Either may be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.
- the semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor), or the semiconductor layer of the transistor includes silicon.
- a metal oxide also referred to as an oxide semiconductor
- the semiconductor layer of the transistor includes silicon.
- the silicon include amorphous silicon and crystalline silicon (low temperature polysilicon, single crystal silicon, etc.).
- the semiconductor layer is, for example, indium and IV! is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, One or more selected from neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc are preferable.
- N4 is preferably one or more selected from aluminum, gallium, yttrium, and tin.
- indium (1 11), gallium it is preferable to use an oxide (also referred to as 10 0) containing, and zinc (11).
- the atomic ratio of I 11 in the I 11 —N 4 —O 11 oxide is preferably not less than the atomic ratio of N 4.
- the atomic ratio of the metal elements of I 11 — IV! Or the composition of the vicinity, 2 or the composition near it, Or the composition near it, I 11 :IV!: ⁇ n 3:
- composition in the vicinity includes the range of ⁇ 30% of the desired atomic number ratio.
- the atomic ratio of I 11 when the atomic ratio of I 11 is 5, the atomic ratio of ⁇ & is ⁇ . .1 and 2 or less, including the case where the atomic number ratio of Al is 5 or more and 7 or less.
- the transistor included in the circuit 1 64 and the transistor included in the display portion 16 2 may have the same structure or different structures.
- the structures of the plurality of transistors included in the circuit 1 64 may be all the same or may be two or more.
- the structures of the plurality of transistors included in the display portion 162 may be all the same or may be two or more.
- connection portion 204 is provided in a region of the substrate 1 5 1 where the substrate 15 2 does not overlap.
- the wiring 16 5 is electrically connected to the FPC 1 72 through the conductive layer 1 6 6 and the connection layer 242.
- the conductive layer 1 66 is a laminated structure of a conductive film obtained by processing the same conductive film as the pixel electrode 1 91 and a conductive film obtained by processing the same conductive film as the optical adjustment layer.
- the conductive layer 166 is exposed on the upper surface of the connection portion 204. As a result, the connection portion 204 and the FPC 172 can be electrically connected via the connection layer 242.
- various optical members can be arranged on the outer side of the substrate 152.
- the optical member include a polarizing plate, a retardation plate, a light diffusing layer (such as a diffusing film), an antireflection layer, and a light collecting film.
- an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, and a shock absorbing layer. Etc. may be arranged.
- the protective layer 195 which covers the light-emitting device 190, entry of impurities such as water into the light-emitting device 190 can be suppressed and the reliability of the light-emitting device 190 can be improved.
- the insulating layer 2 15 and the protective layer 195 are preferably in contact with each other through the opening of the insulating layer 2 14.
- the inorganic insulating film of the insulating layer 2 15 and the inorganic insulating film of the protective layer 195 are in contact with each other. This can prevent impurities from entering the display portion 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 1008 can be improved.
- Figure 98 shows an example where the protective layer 195 has a three-layer structure.
- the protective layer 195 is the inorganic insulating layer 1953 on the common electrode 115, the organic insulating layer 19513 on the inorganic insulating layer 1953, and the inorganic insulating layer 19513 on the inorganic insulating layer 19553.
- an insulating layer 195 is the inorganic insulating layer 1953 on the common electrode 115, the organic insulating layer 19513 on the inorganic insulating layer 1953, and the inorganic insulating layer 19513 on the inorganic insulating layer 19553.
- an insulating layer 195 is the inorganic insulating layer 1953 on the common electrode 115.
- the end portion of the inorganic insulating layer 1953 and the end portion of the inorganic insulating layer 1950 extend outside the end portion of the organic insulating layer 195b and are in contact with each other. Then, the inorganic insulating layer 1953 is in contact with the insulating layer 2 15 (inorganic insulating layer) through the opening of the insulating layer 2 14 (organic insulating layer). Accordingly, the light-emitting device 1 90 can be surrounded by the insulating layer 2 15 and the protective layer 195, so that the reliability of the light-emitting device 1 90 can be improved.
- the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable to extend the end portion of the inorganic insulating film outside the end portion of the organic insulating film.
- Glass, quartz, ceramics, sapphire, resin, or the like can be used for the substrate 151 and the substrate 152, respectively.
- the flexibility of the display device can be improved.
- various curable adhesives such as an ultraviolet curable photocurable adhesive, a reaction curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used.
- These adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imid resin, and ⁇ (polyvinyl resin). ⁇ 02020/174305 ?1/162020/051228 Chloride) resin, (polyvinyl propyl) resin, (ethylene vinyl acetate) resin, etc.
- a material having low moisture permeability such as epoxy resin is preferable.
- a two-liquid mixed type resin may be used.
- an adhesive sheet or the like may be used.
- connection layer 2 42 an anisotropic conductive film (Hachino F: An isotropic
- Light emitting devices 190 include top emission type, bottom emission type, and dual emission type.
- a conductive film that transmits visible light is used for the electrode on the light extraction side. Further, it is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.
- the light emitting device 190 has at least a light emitting layer 193.
- the light-emitting device 1900 has a layer other than the light-emitting layer 1933 as a substance having a high hole injecting property, a substance having a high hole transporting property, a hole blocking material, a substance having a high electron transporting property, and a substance having an electron injecting property.
- the layer may further include a layer containing a high substance or a bipolar substance (a substance having a high electron-transporting property and a hole-transporting property).
- the common layer 1 12 preferably has one or both of a hole injection layer and a hole transport layer.
- the common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.
- the preferable structure of the light emitting device 190 is as described above (FIGS. 4 to 7).
- the common layer 1 12, the light emitting layer 1 93, and the common layer 1 14 may use either a low molecular compound or a high molecular compound, and may contain an inorganic compound.
- the layers forming the common layer 1 12, the light emitting layer 1 93, and the common layer 1 14 are, respectively, a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an ink jet method, a coating method, etc. Can be formed by the above method.
- the light emitting layer 193 is a layer containing a light emitting substance.
- the light emitting layer 193 can include one or more light emitting materials.
- As the light-emitting substance a substance exhibiting a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is appropriately used.
- Materials that can be used for conductive layers such as gates, sources and drains of transistors, and various wires and electrodes that make up display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, and silver. Examples thereof include metals such as tantalum, and tungsten, and alloys containing the metal as a main component. A film containing these materials can be used as a single layer or as a laminated structure.
- a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide containing gallium, or graphene
- a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material is used.
- ⁇ 02020/174305 or 1'2020/051228.
- a nitride of the metal material for example, titanium nitride may be used.
- a metal material, an alloy material (or their (Nitride) is preferably thin so that it has a light-transmitting property
- a laminated film of the above materials can be used as a conductive layer, for example, an alloy of silver and magnesium, and indium tin oxide. It is preferable to use a laminated film of an object because it can increase conductivity.
- conductive layers such as various wirings and electrodes that configure a display device, and conductive layers (e.g., pixel electrodes and common electrodes) of light emitting devices. It can also be used for a conductive layer that functions as an electrode).
- Examples of the insulating material that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
- FIG. 108 shows a sectional view of the display device 1008.
- a perspective view of display 1008 is similar to display 1008 ( Figure 8).
- FIG. 10-8 shows an example of a cross section of the display device 1008 when part of the region including F 01 72, part of the circuit 1 64, and part of the display portion 162 are cut. ..
- FIG. 108 an example of a cross section of the display portion 162, particularly when a region including a light emitting device 190 0 which emits green light and a light emitting device 1903 which emits blue light is cut is shown.
- a display device 1008 illustrated in FIG. 108 includes a transistor 202, a transistor 210, a light emitting device 1900, a light emitting device 1908, and the like between a substrate 153 and a substrate 154.
- the substrate 154 and the protective layer 195 are adhered to each other via the adhesive layer 142.
- the adhesive layer 142 is provided so as to overlap with each of the light emitting device 1900 and the light emitting device 1908, and the display device 1008 has a solid sealing structure.
- the substrate 153 and the insulating layer 212 are attached to each other with an adhesive layer 155.
- a manufacturing substrate provided with an insulating layer 212, each transistor, each light-emitting device, and a light-shielding layer are provided.
- the substrate 154 provided with is bonded to the substrate 154 with the adhesive layer 142.
- the manufacturing substrate is peeled off, and the substrate 153 is attached to the exposed surface, so that the components formed over the manufacturing substrate are transferred to the substrate 153.
- each of the substrate 153 and the substrate 154 has flexibility. Accordingly, the flexibility of the display device 1003 can be improved.
- the insulating layer 21 2 can be an inorganic insulating film that can be used for the insulating layer 21 1, the insulating layer 21 3, and the insulating layer 2 15, respectively.
- the light-emitting device 1 900 has a laminated structure in which the pixel electrode 1 91, the common layer 1 12, the light-emitting layer 1 930, the common layer 1 14, and the common electrode 1 15 are laminated in this order from the insulating layer 2 14 side. ..
- the light-emitting device 1 908 has a laminated structure in which the pixel electrode 1 91, the common layer 1 12, the light-emitting layer 1 938, the common layer 1 14, and the common electrode 1 15 are laminated in this order from the insulating layer 2 14 side.
- the pixel electrode 1 91 is connected to the conductive layer 2 2 2 13 included in the transistor 2 1 0 through an opening provided in the insulating layer 2 1 4.
- the conductive layer 2 2 2 13 is connected to the low resistance region 2 3 1 11 through the openings provided in the insulating layer 2 15 and the insulating layer 2 25.
- the transistor 210 has a function of controlling driving of the light emitting device 190.
- the end portion of the pixel electrode 1 91 is covered with the partition wall 2 16.
- the pixel electrode 1 91 includes a material that reflects visible light
- the common electrode 1 15 includes a material that transmits visible light.
- Light emitted from the light emitting device 1900 and the light emitting device 1903 is emitted to the substrate 1554 side.
- the substrate 154 it is preferable to use a material having high transparency to visible light.
- the pixel electrode 191 included in each light emitting device can be manufactured using the same material and the same process.
- the common layer 1 12 and the common layer 1 14 and the common electrode 1 15 are commonly used for the light emitting device 1900 and the light emitting device 1903.
- the light emitting devices of the respective colors can have the same configuration except that the configuration of the light emitting layer 193 is different.
- a connecting portion 204 is provided in a region of the substrate 153 that does not overlap the substrate 154.
- the wiring 1165 is electrically connected to the FPC 172 via the conductive layer 1666 and the connection layer 24-2.
- the conductive layer 1 66 can be obtained by processing the same conductive film as the pixel electrode 1 9 1.
- the connection portion 204 and the FPC 1 72 can be electrically connected to each other via the connection layer 2 42.
- the transistor 202 and the transistor 210 include a conductive layer 2 21 which functions as a gate, an insulating layer 2 11 which functions as a gate insulating layer, a channel formation region 2 3 1 1 and a pair of low resistance regions 2 3 1 11
- It has an insulating layer 2 25 which functions as an insulating layer, a conductive layer 2 23 which functions as a gate, and an insulating layer 2 15 which covers the conductive layer 2 23.
- the insulating layer 2 11 is located between the conductive layer 2 2 1 and the channel formation region 2 3 1 1.
- the insulating layer 2 25 is located between the conductive layer 2 2 3 and the channel forming region 2 3 1 1.
- the conductive layer 2 2 2 3 and the conductive layer 2 2 2 13 are connected to the low resistance region 2 3 1 11 via the openings provided in the insulating layer 2 15 respectively.
- One of the conductive layers 2 2 2 & and the conductive layer 2 2 2 13 functions as a source, and the other functions as a drain.
- FIG. 108 shows an example in which the insulating layer 2 25 covers the top surface and side surfaces of the semiconductor layer.
- the conductive layer 2 2 2 3 and the conductive layer 2 2 2 13 are connected to the low resistance region 2 3 1 11 via the openings provided in the insulating layer 2 25 and the insulating layer 2 15 respectively.
- the insulating layer 2 25 overlaps with the channel formation region 2 3 1 1 of the semiconductor layer 2 3 1 and does not overlap with the low resistance region 2 3 11 1.
- the conductive layer 2 2 3 is used as a mask and the insulating layer 2 2 5 is caroed. Then, the structure shown in FIG. 10B can be manufactured.
- the insulating layer 225 is provided so as to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222 a and the conductive layer 222 b are respectively provided through the openings of the insulating layer 215 in the low resistance region. 23 1 n is connected. Further, an insulating layer 218 which covers the transistor may be provided.
- the metal oxide applicable to the semiconductor layer will be described below.
- a metal rooster compound having nitrogen may be collectively referred to as a metal rooster compound (metalo x i d e ). Further, the metal rooster compound containing nitrogen may be referred to as a metal oxynitride (meta l x y n i t r i d e ). For example, a metal oxide containing nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer.
- ZnON zinc oxynitride
- CAAC (c — ax i s a l i g n e d c r y s t a l) and C AC (C l o u d — A l i g n e d C omp o s i t e) may be described.
- CAAC represents an example of a crystal structure
- CAC represents an example of a function or a material structure.
- CAC (C l u u d — A l i g n e d C omp o s i t e) — OS (Ox i d e S em i c o n d u c t o r) can be used for the semiconductor layer.
- CAC-OS or CAC-meta 1 o x i d e has a conductive function in a part of the material, an insulating function in a part of the material, and a function as a semiconductor in the whole material.
- CAC- ⁇ S or C AC- meta 1 oxide is used in the semiconductor layer of a transistor, its conductive function is to flow electrons (or holes) that are carriers, and its insulating function is to function as carrier. It is a function that does not allow electrons to flow.
- the function of switching can be given to CAC—OS or CAC—meta 1 oxide. ..
- CAC-OS or CAC-meta l o x i d e both functions can be maximized.
- CAC-OS or CAC-meta 1 x x i d e has a conductive region and an insulating region.
- the conductive region has the above-mentioned conductive function
- the insulating region has the above-mentioned insulating function.
- the conductive region and the insulating region may be separated at the nanoparticle level.
- the conductive region and the insulating region may be unevenly distributed in the material.
- the conductive region may be observed as a cloudy connection around the periphery.
- the conductive region and the insulating region each have a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less. It may be dispersed in the material.
- CAC-OS or CAC-meta 1 oxide has different band gaps. Composed of minutes.
- CAC-OS or CAC-metal oxide is composed of a component having a wide gap due to the insulating region and a component having a narrow gap due to the conductive region.
- the carrier when the carrier flows, the carrier mainly flows in the component having the narrow gap.
- the component having the narrow gap acts complementarily to the component having the wide gap, and the carrier also flows to the component having the wide gap in conjunction with the component having the narrow gap.
- CAC—OS or CAC—me t a 1 o x i d e can also be called a matrix composite (ma t r i x c omp o s i t e) or a metal matrix composite (m e t a l mat r i x c omp o s i t e).
- Oxide semiconductors are classified into single crystal oxide semiconductors and other non-single crystal oxide semiconductors.
- non-single-crystal oxide semiconductors include C AAC-O S (c-a X isa 1 ignedcrystalline oxide s em iconductor, takrystal oxide semiconductor, nc— ⁇ S (nanocrystalline oxides em iconductor), pseudo non-crystalline
- amorphous oxide semiconductors a-like OS: amorphous-like oxides em icon ductor
- amorphous roxide semiconductors amorphous oxide semiconductors.
- CAAC-OS has a c-axis-oriented crystal structure, in which a plurality of nanocrystals are connected in the ab plane direction and have strain. Strain refers to a region where the lattice arrangement is changed between a region where the lattice arrangement is uniform and another region where the lattice arrangement is uniform in the region where a plurality of nanocrystals are connected.
- nanocrystals are basically hexagonal, they are not limited to regular hexagons and may be non-regular hexagons.
- the strain may have a lattice arrangement such as a pentagon and a heptagon.
- CAAC-OS it is difficult to confirm a clear grain boundary (also called grain boundary) even in the vicinity of strain. That is, it is understood that the formation of crystal grain boundaries is suppressed by the distortion of the lattice arrangement. This is because CAAC-OS can tolerate the strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the bond distance between atoms changes due to substitution with a metal element. This is because
- the CAAC-OS is a layered structure in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M, Zn) layer) are stacked. It tends to have a crystalline structure (also referred to as a layered structure).
- indium and the element M can be replaced with each other, and when the element M of the (M, Zn) layer is replaced with indium, it can be expressed as an (I n, M, Z n) layer.
- the indium in the In layer is replaced with the element M, it can be expressed as an (In, M) layer.
- CAAC-OS is a highly crystalline metal oxide.
- the CAAC-OS establishes well-defined grain boundaries. ⁇ 002020/174305 ?1/162020/051228 It is difficult to confirm, so it can be said that the decrease in electron mobility due to grain boundaries does not occur easily.
- the crystallinity of metal oxides may decrease due to the inclusion of impurities and the generation of defects. Therefore, the amount of impurities and defects (oxygen deficiency ⁇ .. 0: 7 611 Also called. It can be said that it is a metal oxide with few). Therefore, the physical properties of the metal oxide having 880-000 are stable. Therefore, the metal oxide having 880-000 is resistant to heat and highly reliable.
- 11 (; — ⁇ has a periodic atomic arrangement in a minute region (for example, a region of 1111x1 or more and 10111x1 or less, particularly a region of 1111x1 or more and 3111x1 or less). Also, 11 (: — ⁇ is a different nanocrystal. There is no regularity in the crystallographic orientation between the layers, which means that there is no regularity in the entire film.Therefore, depending on the analysis method, 110- ⁇ may be 3 — 1 ⁇ 1 £ 6 ⁇ £ or amorphous. In some cases, it cannot be distinguished from an oxide semiconductor.
- indium-galli-umu zinc oxide which is a kind of metal oxide containing indium, gallium, and zinc
- 10 ⁇ 0 indium-galli-umu zinc oxide
- 10 ⁇ 0 which is a kind of metal oxide containing indium, gallium, and zinc
- 10 ⁇ 0 may have a stable structure by using the above-described nanocrystal. ..
- 1 1 1 ⁇ 60 is a metal oxide having a structure between 110-o and an amorphous oxide semiconductor.
- ⁇ has a void or a low density region. That is, 1 1600 is 11. The crystallinity is low compared to 10 and 0880-000.
- Oxide semiconductors have various structures and have different characteristics.
- Oxide semiconductor of one embodiment of the present invention the amorphous oxide semiconductor, a polycrystalline oxide semiconductor, 3-1 ⁇ 1 £ 6 03, 110 ⁇
- ⁇ , 0 88 (3 ⁇ , may have two or more types.
- the metal oxide film functioning as a semiconductor layer can be formed using one or both of an inert gas and an oxygen gas.
- the flow rate ratio of oxygen (oxygen partial pressure) at the time of forming the metal oxide film is not particularly limited. However, when obtaining a transistor with high field-effect mobility, the flow rate ratio of oxygen (oxygen partial pressure) during the formation of the metal oxide film is preferably 0% or more and 30% or less, and 5% or more and 30% or less. The following is more preferable, and 7% or more and 15% or less is further preferable.
- the energy gap of the metal oxide is preferably 26 V or more, more preferably 2.56 or more, and further preferably 36 V or more.
- the off-state current of the transistor can be reduced by using the metal oxide having a wide energy gap.
- the substrate temperature at the time of forming the metal oxide film is preferably 350° or lower, more preferably room temperature or higher and 200° or lower, and further preferably room temperature or higher and 130° or lower.
- the substrate temperature at the time of forming the metal oxide film is room temperature, it is possible to enhance the production 1 ' , which is preferable.
- the metal oxide film can be formed by a sputtering method.
- a sputtering method Other than that, for example, An ECVD method, a thermal CVD method, an ALD method, a vacuum deposition method or the like may be used.
- the reliability of the light emitting device can be improved.
- Figure 11A shows a block diagram of a pixel.
- the pixel shown in FIG. 11A has a memory (Memo r y) in addition to a switching transistor (Sw i t c h in g T r), a driving transistor (D r i vi g n g T r), a light emitting device ( ⁇ L E D).
- the data D at a_W is supplied to the memory.
- the data Da t a_ W is supplied to the pixel in addition to the display data D at a, the current flowing through the light emitting device is increased, and the display device can display high brightness.
- the light emitting device By driving the light emitting device included in the display device of one embodiment of the present invention based on the display data Da ta and the data Da ta _W, the light emitting device can emit light with high luminance.
- Figure 11B shows a concrete circuit diagram of the pixel circuit.
- the pixel shown in FIG. 11B has a transistor M1, a transistor M2, a transistor M3, a transistor M4, a capacitor C s, a capacitor Cw, and a light emitting device E L.
- One of a source and a drain of the transistor Ml is electrically connected to one electrode of the capacitor Cw.
- the other electrode of the capacitor Cw is electrically connected to one of the source and the drain of the transistor M4.
- One of the source and the drain of the transistor M4 is electrically connected to the gate of the transistor M2.
- the gate of the transistor M2 is electrically connected to one electrode of the capacitor C s.
- the other electrode of the capacitance C s is electrically connected to one of the source and the drain of the transistor M2.
- One of the source and drain of the transistor M2 is electrically connected to one of the source and drain of the transistor M3.
- One of a source and a drain of the transistor M3 is electrically connected to one electrode of the light emitting device EL.
- Each transistor shown in FIG. 11B has a back gate electrically connected to the gate, but the back gate connection is not limited to this. In addition, the transistor may not be provided with a backgate.
- the other electrode of the capacitance Cw, one of the source and drain of the transistor M4 the transistor ⁇ 02020/174305 ? €1/162020/051228
- a node to which the gate of 1 ⁇ 2 and one electrode of the capacitor 08 are connected is referred to as a node NM.
- a node connected to the other electrode of the capacitor 8 one of the source and drain of the transistor 1 ⁇ 2, one of the source or drain of the transistor 1 ⁇ 3, and one electrode of the light emitting device NA
- the gate of the transistor N41 is electrically connected to the wiring 0 1.
- the gate of the transistor N43 is electrically connected to the wiring 0 1.
- the gate of the transistor N44 is electrically connected to the wiring 02.
- the other of the source and the drain of the transistor is electrically connected to the wiring.
- the other of the source and drain of the transistor 1 ⁇ 3 is electrically connected to the wiring V 0.
- the other of the source and the drain of the transistor 1 ⁇ 4 is electrically connected to the wiring 808-8.
- the other of the source and the drain of the transistor N42 is electrically connected to the wiring ANODE (high potential side).
- the other electrode of the light emitting device £ is electrically connected to the wiring CATHODE (low potential side).
- the wiring 0 1 and the wiring 02 can have a function as a signal line for controlling the operation of the transistor.
- the wiring 088-8 can have a function as a signal line for supplying an image signal to a pixel.
- Wiring 0_8_8_ is a memory circuit It can have a function as a signal line for writing data to.
- the wiring 088-8 can have a function as a signal line which supplies a correction signal to a pixel.
- the wiring ⁇ functions as a monitor line for acquiring the electrical characteristics of the transistor N44. Further, by supplying a specific potential from the wiring ⁇ to the other electrode of the capacitor 08 through the transistor IV! 3, writing of the image signal can be stabilized.
- Transistor 1 ⁇ 2, transistor 1 ⁇ 4, and capacitor ⁇ are memory circuits. Make up.
- the node NM is a storage node, and by making the transistor N44 conductive, the signal supplied to the wiring 088-8 can be written to the node NM.
- transistor 1 ⁇ 4 By using a transistor with extremely low off-state current as transistor 1 ⁇ 4, the potential of node NN4 can be held for a long time.
- the transistor N44 for example, a transistor using a metal oxide in a channel formation region (hereinafter referred to as a £ transistor) can be used.
- a £ transistor a transistor using a metal oxide in a channel formation region
- the off current of the transistor N44 can be made extremely low, and the potential of the node NN4 can be held for a long time.
- Embodiment 1 can be referred to for specific examples of the metal oxide.
- the ⁇ £ transistor is a transistor that has £ 1 in the channel formation region such that impact ionization, avalanche breakdown, short channel effect, etc. do not occur (hereinafter, It has characteristics different from that of a transistor) and can form a highly reliable circuit.
- a transistor may be applied for the transistor N44. At this time, it is preferable to use a ground transistor also for the other transistors forming the pixel. ⁇ 02020/174305 ⁇ (: 1'2020/051228
- transistors having amorphous silicon examples include transistors having amorphous silicon, transistors having crystalline silicon (typically, low temperature polysilicon), and transistors having single crystal silicon.
- one pixel may have both the O transistor and the £ 1 transistor.
- the signal written in the node NN4 is capacitively coupled with the image signal supplied from the wiring 808-8, and can be output to the node NA.
- the transistor N41 can have a function of selecting a pixel.
- the correction signal can be added to the supplied image signal. Since the correction signal may be attenuated by an element on the transmission path, it is preferable to generate it in consideration of the attenuation.
- the light emitting device By causing the light emitting device to emit light using the image signal and the correction signal, the current flowing through the light emitting device can be increased, and high brightness can be expressed. Since a voltage higher than the output voltage of the source driver can be applied as the gate voltage of the driving transistor, the power consumption of the source driver can be reduced.
- Figures 128 to 120 show 6A to 6C are cross-sectional views illustrating a method for manufacturing a layer 786.
- a conductive film 772 is formed over the planarization insulating film 770, and an insulating film 730 is formed so as to cover part of the conductive film 772 (Fig. 128).
- a droplet 784 is discharged from a droplet discharge device 783 to the exposed portion of the conductive film 772 which is an opening of the insulating film 730, so that a layer 785 containing a composition is formed.
- the droplet 784 is a composition containing a solvent and is deposited on the conductive film 772 (Fig. 123).
- step of discharging the droplet 784 may be performed under reduced pressure.
- the solvent is removed from the layer 785 containing the composition, and the layer is solidified to form an Otsu layer 786 (Fig. 120).
- the solvent can be removed by performing a drying step or a heating step.
- a conductive film 788 is formed on the second layer 786 to form a light emitting device 782 (Fig. 120). ⁇ 02020/174305 ? €1/162020/051228
- the composition can be selectively discharged, so that material loss can be reduced.
- the process can be simplified and the cost can be reduced.
- droplet discharge method described above is a general term for a method of discharging droplets such as a nozzle having a composition discharge port or a head having one or more nozzles.
- FIG. 13 is a conceptual diagram illustrating a droplet discharge device 1400.
- the droplet discharge device 1400 has a droplet discharge means 1403.
- the droplet discharge means 1403 has a head 1405 and a head 1414.
- the head 1 405 and the head 1 414 are connected to the control means 1 407, which can be controlled by the computer 1 4 10 to draw a pre-programmed pattern.
- the drawing timing may be based on, for example, the marker 1 41 1 1 formed on the substrate 1 402.
- the reference point may be fixed based on the outer edge of the substrate 1402.
- the marker 1 41 1 is detected by the image pickup means 1 404, and the marker converted by the image processing means 1 409 into a digital signal is recognized by the computer 1 4 1 0 to generate a control signal and generate a control signal.
- a charge-coupled device 0000
- an image sensor using a complementary metal monoxide-semiconductor 00 £
- the information on the pattern to be formed on the substrate 1402 is stored in the storage medium 1408, and a control signal is sent to the control means 1407 based on this information to cause the droplet discharge means 1408.
- Individual heads 1405 and heads 1414 of 403 can be controlled individually.
- the material to be discharged is supplied to the head 1 405 and the head 14 1 2 from the material supply source 1 4 1 3 and the material supply source 1 4 1 4 through pipes.
- the inside of the head 1 405 has a structure having a space filled with a liquid material as shown by a dotted line 1 406 and a nozzle that is a discharge port.
- the head 1 4 1 2 also has an internal structure similar to that of the head 1 4 05. If the head 1 405 and the head 1 4 12 nozzles of different sizes are provided, different materials can be simultaneously drawn with different widths. A single head can discharge and draw multiple types of luminescent materials. In addition, when drawing in a large area, the same material can be simultaneously ejected from multiple nozzles to improve throughput and drawing can be performed.
- the head 1405 and head 1 1 4 1 2 can freely scan the substrate in the directions of the X, arrow, and arrow shown in Fig. 13 to freely draw the area to be drawn. It can be set, and the same pattern can be drawn multiple times on one board, [0349]
- the step of discharging the composition may be performed under reduced pressure.
- the substrate may be heated at the time of discharging.
- one or both of the steps of drying and baking are performed. Both the drying and firing steps are ⁇ 0 2020/174305 Heat treatment (: 1'2020/051228 Heat treatment process, but its purpose, temperature and time are different. Drying process and baking process are under normal pressure or reduced pressure, laser Irradiation with light, instantaneous thermal annealing, heating furnace, etc. There is no particular limitation on the timing of this heat treatment or the number of times of heat treatment. Depends on the material of the substrate and the nature of the composition.
- the second layer 786 can be manufactured using the droplet discharge device.
- the electronic device of this embodiment includes the display device of one embodiment of the present invention in the display portion, it has a long life and high reliability.
- the electronic device can have a long life and a large screen.
- the screen size of the display unit can be set to 20 inches or more diagonal, 30 inches or more diagonal, 50 inches or more diagonal, 60 inches or more diagonal, or 70 inches or more diagonal. ..
- Examples of electronic devices include television devices, desktop or notebook personal computers, monitors for computers, digital signage, etc.
- Digital signboards Digital signboards
- electronic devices with relatively large screens such as large game machines such as pachinko machines, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, audio Playback devices, etc.
- the electronic device of this embodiment can be incorporated along the inner or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.
- the electronic device of this embodiment may include an antenna. By receiving the signal with the antenna, the display unit can display images and information.
- the antenna may be used for contactless power transmission.
- the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage. , Which include the functions of measuring electric power, radiation, flow rate, humidity, gradient, vibration, odor and infrared rays).
- the electronic device of this embodiment can have various functions.
- ⁇ 02020/174305 A function to display the time stamp (: 1'2020/051228, etc.), a function to execute various software (programs), a wireless communication function, a function to read the program or data recorded on the recording medium, etc.
- the function to display various information (still image, moving image, text image, etc.) on the display touch panel function, calendar, date or time.
- ⁇ 02020/174305 A function to display the time stamp (: 1'2020/051228, etc.), a function to execute various software (programs), a wireless communication function, a function to read the program or data recorded on the recording medium, etc.
- Figure 148 shows an example of a television set.
- the television device 7100 has a housing 7101 and a display portion 7000 incorporated therein.
- a structure is shown in which the housing 7101 is supported by the stand 7103.
- the display device of one embodiment of the present invention can be applied to the display portion 7000.
- the television device 7100 shown in FIG. 148 can be operated by an operation switch included in the housing 7101 or a separate remote controller 711.
- the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
- the remote controller 71 1 1 1 may have a display section for displaying information output from the remote controller 71 1 1. You can operate the channel and volume using the operation keys or touch panel provided on the remote controller 71 1 1 and operate the image displayed on the display unit 7000.
- the television device 7100 is provided with a receiver, a modem, and the like.
- the receiver can receive general TV broadcasts.
- one-way (sender to receiver) or bidirectional (between sender and receiver, or between receivers) information communication can be performed. It is also possible to do so.
- FIG. 148 shows an example of a laptop personal computer.
- notebook personal computer 7
- a display unit 7000 is incorporated in the housing 721 1.
- the display device of one embodiment of the present invention can be applied to the display portion 7000.
- the digital signage 7300 shown in Fig. 14 (3 includes a housing 7301, a display unit 7000, and a speaker 7
- Has 303 etc. can have a lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.
- Figure 140 is a digital signage 7400 attached to a column 7401.
- the digital signage 7400 has a display portion 7000 provided along the curved surface of the pillar 7401.
- the display device of one embodiment of the present invention can be applied to the display portion 7000.
- a touch panel By applying a touch panel to the display unit 700, not only an image or a moving image is displayed on the display unit 700, but also the user can operate intuitively, which is preferable. Also, when it is used for the purpose of providing information such as route information or traffic information, it is possible to enhance the user's usability by an intuitive operation.
- digital signage 7300 or digital signage 7400 is information terminal device 7 3 1 1 or information terminal device such as smartphone owned by the user. It is preferable to be able to cooperate with wireless communication with 7 4 1 1.
- the information of the advertisement displayed on the display unit 7 0 0 0 can be displayed on the screen of the information terminal 7 3 1 1 or the information terminal 7 4 1 1.
- the display on the display section 7 00 0 can be switched.
- the digital signage 7300 or the digital signage 7400 execute a game using the screen of the information terminal 7 3 1 1 or the information terminal 7 4 1 1 as an operation means (controller). It can. This allows an unspecified number of users to participate in and enjoy the game at the same time.
- the electronic devices shown in FIGS. 158 to 15F include a housing 900, a display unit 9001, a speaker 9003, an operation key 9005 (power switch or operation switch ), connection terminal 900, sensor 900 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness , Electric field, electric current, voltage, electric power, radiation, flow rate, humidity, gradient, vibration, odor or infrared ray measurement), microphone 900, etc.
- the electronic devices illustrated in FIGS. 158 to 15F each have various functions.
- the function to display various information (still images, moving images, text images, etc.) on the display unit, the touch panel function, the function to display the calendar, date or time, etc., the processing is controlled by various software (programs) It has a function, a wireless communication function, a function of reading and processing a program or data recorded in a recording medium, and the like.
- the functions of the electronic device are not limited to these and can have various functions.
- the electronic device may have a plurality of display units.
- the electronic device is equipped with a camera, etc., and has functions such as shooting still images and moving images and saving them in a recording medium (external or built into the camera), displaying the captured images on the display unit, etc. Good.
- FIGS. 158 to 15F Details of the electronic devices shown in FIGS. 158 to 15F will be described below.
- FIG. 158 is a perspective view showing the portable information terminal 9101.
- the mobile information terminal 9101 can be used as, for example, a smartphone.
- the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
- the mobile information terminal 9101 can display characters and image information on a plurality of surfaces thereof.
- Figure 158 shows an example of displaying three icons 9500. ⁇ 0 2020/174305 ? €1/16 2020/051228 Further, the information 9005 indicated by a broken-line rectangle can be displayed on the other surface of the display section 9001.
- Examples of information 9 05 1 are notifications of incoming calls such as e-mail, £N 3, telephones, titles such as e-mail or £N 3, sender's name, date and time, battery level, antenna reception, etc. There is strength. Further, an icon 9505 may be displayed at the position where the information 9001 is displayed.
- FIG. 153 is a perspective view showing the portable information terminal 9102.
- the portable information terminal 9102 has a function of displaying information on three or more surfaces of the display section 9001.
- information 9002, information 9005, and information 9004 are displayed on different planes.
- the user can check the information 9 0 5 3 displayed at a position observable from above the portable information terminal 9 10 2 with the portable information terminal 9 10 2 stored in the chest pocket of clothes. ..
- the user can confirm the display without taking out the portable information terminal 9102 from the pocket and determine whether or not to accept the call, for example.
- FIG. 150 is a perspective view showing a wrist watch type portable information terminal 9200.
- the mobile information terminal 920 can be used as, for example, a smart watch. Further, the display portion 9001 is provided with a curved display surface, and display can be performed along the curved display surface. Further, the portable information terminal 920 can communicate hands-free, for example, by mutually communicating with a headset capable of wireless communication. Further, the portable information terminal 9200 can also perform data transmission with other information terminals and can be charged by using the connection terminal 900. Note that the charging operation may be performed by wireless power feeding.
- FIG. 15F are perspective views showing a foldable portable information terminal 9201.
- Fig. 150 shows the portable information terminal 9201 in the unfolded state
- Fig. 15F shows the folded state
- Fig. 15 £ shows the transition from one of Fig. 150 and Fig. 15F to the other. It is a perspective view of the state of.
- the portable information terminal 9201 is excellent in portability in the folded state, and has a wide display area with no seams in the unfolded state, which is excellent in viewability.
- a display portion 9001 included in the portable information terminal 9201 is supported by three housings 900 connected by a hinge 9505.
- the display unit 9001 has a radius of curvature of 0. It can be bent below 111 111.
- FIG. 16 shows a block diagram of the television device 600.
- constituent elements are categorized by function and shown as block diagrams independent of each other. However, it is difficult to completely separate actual constituent elements by function. It is possible that one component may be responsible for more than one function.
- the television device 600 includes a control unit 601, a storage unit 60 2, a communication control unit 60 3, an image processing circuit 60 4, a decoder circuit 60 5, a video signal receiving unit 60 6, and a timing controller. 6 0 7, Source dry It has a bar 608, a gate driver 609, a display panel 620, and the like.
- the display device illustrated in Embodiment 1 can be applied to the display panel 620 in FIG. As a result, a television device 600 that is large in size, has a long life, and has high display quality can be realized.
- the control unit 601 can function as, for example, a central processing unit (CPU: C e n t r a l P r o c e s s i n g Un i t).
- the control unit 601 has a function of controlling components such as the storage unit 602, the communication control unit 603, the image processing circuit 604, the decoder circuit 605, and the video signal receiving unit 606 via the system bus 630.
- a central processing unit CPU: C e n t r a l P r o c e s s i n g Un i t.
- the control unit 601 has a function of controlling components such as the storage unit 602, the communication control unit 603, the image processing circuit 604, the decoder circuit 605, and the video signal receiving unit 606 via the system bus 630.
- control unit 60 1 Signals are transmitted between the control unit 60 1 and each component via the system bus 630. Further, the control unit 601 has a function of processing a signal input from each component connected via the system bus 630, a function of generating a signal output to each component, and the like. Each component connected to 30 can be controlled comprehensively.
- the storage unit 602 functions as a register accessible by the control unit 601 and the image processing circuit 604, a cache memory, a main memory, a secondary memory, and the like.
- a storage device that can be used as the secondary memory for example, a storage device to which a rewritable nonvolatile memory is applied can be used.
- flash memory MRAM (Magnetoresistive R and om cess Memo ry no, PR AM hasechange RAM), Re RAM (Resistive RAM), Fe RAM (Ferroelectric RAM), etc.
- MRAM Magneticoresistive R and om cess Memo ry no
- PR AM hasechange RAM Re RAM (Resistive RAM), Fe RAM (Ferroelectric RAM), etc.
- a memory device that can be used as a temporary memory such as a register, a cache memory, or a main memory
- a volatile memory such as a DRAM (Dynamic RAM) or an SRAM (Static Random Access Memory) is used. You may use.
- DRAM is used as the RAM provided in the main memory, and a memory space is virtually allocated and used as a work space for the control unit 601.
- the operating system, application programs, program modules, program data, etc. stored in the storage unit 602 are loaded into the RAM for execution. These data, programs, and program modules loaded in the RAM are directly accessed by the control unit 601 and operated.
- ROM can store BI ⁇ S (B asic Input / ⁇ utput System) and firmware that do not require rewriting.
- a mask ROM a 0r PROM (On eli me P ro gram ble R e m e d M e r m e r y), an EPROM (E rasable P rogr amma ble Read On memory), or the like can be used.
- the stored data can be erased by irradiation with ultraviolet rays UV-EPROM (U ltra— V iolet E rasable P rogr amma ble Read On ly Memo ry), EEPROM (E lectrically E rasable P rogr amma ble Read On ly M emo ry), and fluffy memory .
- UV-EPROM U ltra— V iolet E rasable P rogr amma ble Read On ly Memo ry
- EEPROM E lectrically E rasable P rogr amma ble Read On ly M emo ry
- fluffy memory irradiation with ultraviolet rays UV-EPROM (U ltra— V iolet E rasable P rogr amma ble Read On ly Memo ry), EEPROM (E lectrically E rasable P rogr amma ble Read On ly M emo ry), and fluffy memory .
- a removable storage device may be connectable.
- recording media drives such as hard disk drives (Hard Disk Drive: HD D) and solid state drives (S SD) that function as storage devices, flash memory, Blu-ray discs, DVDs, etc. It is preferable to have a terminal for connecting to the recording medium. This allows the video to be recorded.
- the communication control unit 603 has a function of controlling communication performed via a computer network. That is, the television device 600 is applied with the technology of I oT (I n t e r n e t o f Th i n g s).
- the communication control unit 603 controls, for example, a control signal for connecting to the computer network according to an instruction from the control unit 601, and sends the signal to the computer network.
- the Internet intranet, extranet, PAN (Personal Ar Nea Ne two rk), LAN (Local Area Ne two rk), CAN (C) that are the foundation of Wo rld Wi de We b (WWW) amp us Ar ea Ne two rk), MAN (Me tropolitan Ar ea Ne two rk), WAN (Wide Ar ea Ne two rk), GAN (G lobal Ar ea Ne two rk), etc. Can communicate.
- the communication control unit 603 communicates with a computer network or other electronic device using a communication standard such as Wi-Fi (registered trademark), Bluetooth (registered trademark), ZigBee (registered trademark), or the like. It may have the function of Wi-Fi (registered trademark), Bluetooth (registered trademark), ZigBee (registered trademark), or the like. It may have the function of Wi-Fi (registered trademark), Bluetooth (registered trademark), ZigBee (registered trademark), or the like. It may have the function of
- the communication control unit 603 may have a function of wirelessly communicating.
- an antenna and a high frequency circuit RF circuit
- the high-frequency circuit is a circuit for mutually converting an electromagnetic signal and an electric signal in a frequency band defined by the legal system of each country, and wirelessly communicating with another communication device using the electromagnetic signal.
- a practical frequency band several 10 kHz to 3 ⁇ 4 l GHz is generally used.
- the high-frequency circuit connected to the antenna shall have a high-frequency circuit part that supports multiple frequency bands, and the high-frequency circuit part shall have an amplifier, mixer, filter, DSP, RF transiper, etc. You can
- the video signal receiving unit 606 includes, for example, an antenna, a demodulation circuit, an AD conversion circuit (analog-digital conversion circuit), and the like.
- the demodulation circuit has a function of demodulating a signal input from the antenna.
- the A/D conversion circuit has a function of converting a demodulated analog signal into a digital signal.
- the signal processed by the video signal receiving unit 606 is sent to the decoder circuit 605.
- the decoder circuit 605 has a function of decoding the video data included in the digital signal input from the video signal receiving unit 606 according to the specifications of the broadcast standard to be transmitted, and generating a signal to be transmitted to the image processing circuit.
- a broadcasting standard for 8 K broadcasting there is H.265
- Broadcasting radio waves that can be received by the antenna of the video signal receiving unit 606 include terrestrial waves or radio waves transmitted from satellites.
- the broadcast waves that can be received by the antenna include analog broadcasts and digital broadcasts, as well as video and audio or audio-only broadcasts.
- it can receive broadcast radio waves transmitted in a specific frequency band in the U HF band (about 30 OMHz to 3 GHz) or the VHF band (30 MHz to 300 MHz).
- the transfer rate can be increased and more information can be obtained.
- This allows the display panel 620 to display an image having a resolution exceeding full high-definition. For example, it can display images with 4K2K, 8K4K, 16K8K, or higher resolution.
- the video signal receiving unit 606 and the decoder circuit 605 may be configured to generate a signal to be transmitted to the image processing circuit 604, using broadcast data transmitted by a data transmission technique via a computer network. At this time, when the signal to be received is a digital signal, the video signal receiving unit 606 does not have to include a demodulation circuit and an AD conversion circuit.
- the image processing circuit 604 has a function of generating a video signal to be output to the timing controller 607 based on the video signal input from the decoder circuit 605.
- the timing controller 607 generates signals (clock signals, start pulse signals, etc.) to be output to the gate driver 609 and the source driver 608 based on the synchronization signals included in the video signals processed by the image processing circuit 604. Have the function to In addition to the above signals, the timing controller 607 has a function of generating a video signal to be output to the source driver 608.
- the display panel 620 has a plurality of pixels 621. Each pixel 621 is driven by the signals supplied from the gate driver 609 and the source driver 608.
- a display panel having a resolution according to the 8K4K standard in which the number of pixels is 7680 X 4320, is shown.
- the resolution of the display panel 620 is not limited to this, and may be a resolution in accordance with a standard such as full high-definition (pixel number 1 920 x 1080) or 4 K 2 K (pixel number 3840 x 2160).
- the control unit 601 and the image processing circuit 604 shown in FIG. 16 can be configured to include a processor, for example.
- the control unit 601 can use a processor that functions as a CPU.
- the image processing circuit 604 another processor such as a DSP (Digital Signal Processor) or a GPU (Graphics Processing Unit) can be used.
- the above-mentioned processor is connected to the FPGA (F It may be realized by using ield P rogr amma ble ga te Ar ray), FPAA (F ield P ro gra m ble ble Ar de vice) and V, and P LD (P rogr amma ble ble ar vice vice).
- the processor interprets and executes commands from various programs to perform various data processing and program control.
- the program that can be executed by the processor may be stored in a memory area of the processor or may be stored in a storage device provided separately.
- the control unit 60 1, the storage unit 602, the communication control unit 603, the image processing circuit 604, the decoder circuit 605, the video signal receiving unit 606, and the timing controller 607 are two.
- the above functions may be integrated in one IC chip to form a system LSI.
- the system L S I may include a processor, a decoder circuit, a tuner circuit, an AD conversion circuit, a DRAM, and a SR AM.
- a transistor in which an extremely low off-state current is realized by using an oxide semiconductor in a channel formation region can be used for the control portion 601, IC included in another component, or the like. Since the off-state current of the transistor is extremely low, the data holding period can be secured for a long time by using the transistor as a switch for holding the charge (data) flowing into the capacitor functioning as a memory. ..
- the control unit 60 1 is operated only when necessary, and in other cases, the information of the immediately preceding process is saved in the relevant memory. Normally-off computing is possible. Accordingly, low power consumption of the television device 600 can be achieved.
- the structure of the television device 600 in FIG. 16 is an example, and it is not necessary to include all the components.
- the television device 600 may have necessary components among the components shown in FIG. Moreover, the television device 600 may have components other than the components shown in FIG.
- the television device 600 may include an external interface, an audio output unit, a touch panel unit, a sensor unit, a camera unit, and the like in addition to the structure illustrated in FIG.
- an external interface for example, USB (Universal Serial Bus) terminal, LAN (Local Area Neighbor rk) connection terminal, power supply receiving terminal, audio output terminal, audio input terminal, video
- output terminals external connection terminals such as video input terminals, transceivers for optical communication using infrared rays, visible light, and ultraviolet rays, and physical buttons provided on the housing.
- the sound input/output unit includes a sound controller, a microphone, a speaker and the like.
- the image processing circuit 604 will be described in more detail below.
- the image processing circuit 604 preferably has a function of executing image processing based on a video signal input from the decoder circuit 605.
- Image processing (: 1'2020/051228
- image processing include noise removal processing, gradation conversion processing, color tone correction processing, and brightness correction processing. , For example, gamma correction.
- the image processing circuit 604 has a function of performing inter-pixel interpolation processing associated with resolution up-conversion and inter-frame interpolation processing associated with frame frequency up-conversion.
- noise reduction processing various noises such as mosquito noise generated around the contours of characters, block noise generated in high-speed movies, random noise causing flicker, and dot noise caused by resolution up-conversion are removed. To do.
- the gradation conversion processing is processing for converting the gradation of an image into the gradation corresponding to the output characteristics of the display panel 620. For example, when increasing the number of gradations, the histogram can be smoothed by interpolating and assigning gradation values corresponding to each pixel to an image input with a small number of gradations.
- high dynamic range (HDR) processing that expands the dynamic range is also included in the gradation conversion processing.
- inter-pixel interpolation processing interpolates data that does not originally exist when the resolution is up-converted. For example, the pixels around the target pixel are referenced, and the data is interpolated so as to display the intermediate colors.
- the color tone correction process is a process of correcting the color tone of the image.
- the brightness correction process is a process for correcting the brightness (luminance contrast) of the image. For example, the type and brightness of the illumination of the space in which the television device 600 is installed, or the color purity is detected, and the brightness and color tone of the image displayed on the display panel 620 are corrected in accordance with the detection. Alternatively, it has a function to match the displayed image with the images of various scenes in the previously saved image list and correct the image displayed with the brightness and color tone suitable for the image of the closest scene. May be.
- Interframe interpolation generates an image of a frame that does not originally exist (interpolation frame) when the frame frequency of the displayed video is increased. For example, an image of an interpolation frame to be inserted between two images is generated from the difference between two images. Alternatively, it is possible to generate images of a plurality of interpolation frames between two images. For example, when the frame frequency of the video signal input from the decoder circuit 605 has a 60H Z, by generating a plurality of interpolated frames, the frame frequency of the video signal you output to the timing controller 607, 1 twice It can be increased to 20H 2, or 4 times 240H 2, or 8 times 480 H 2.
- the HOMO level and LUMO_ level can be calculated based on cyclic voltammetry (CV) measurement.
- an electrochemical analyzer manufactured by BAS Co., Ltd., model number: AL S model 600 A or 600 C
- the solution used for CV measurement was dehydrated dimethylformamide (DMF) (Aldrich Co., Ltd., 99.8%, catalog number: 2 2705-6) as the solvent, and the supporting electrolyte, perchloric acid tetral n- Butyl ammonium (n—BU 4 NC 1 0 4 ) (manufactured by Tokyo Chemical Industry Co., Ltd., Catalog No. T08 36) was dissolved to a concentration of 100 mmo l /L, and the measurement target was 2 mmo 1 /L.
- DMF dimethylformamide
- n—BU 4 NC 1 0 4 perchloric acid tetral n- Butyl ammonium
- a platinum electrode (BTE AS Co., Ltd., PTE platinum electrode) is used as the working electrode, and a platinum electrode (BIAS Co., Ltd., Pt counter electrode for VC-3) is used as the auxiliary electrode ( 5 cm)) was used as the reference electrode, and an Ag/Ag+ electrode (RE 7 non-aqueous solvent type reference electrode manufactured by BAS Co., Ltd.) was used.
- the measurement was performed at room temperature (20 to 25°C). The scanning speed during CV measurement was standardized to 0.1 V/sec, and the oxidation potential E a [V] and reduction potential E c [V] with respect to the reference electrode were measured.
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Abstract
Description
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Priority Applications (4)
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KR1020217027755A KR20210126631A (ko) | 2019-02-26 | 2020-02-14 | 표시 장치, 표시 모듈, 전자 기기, 및 텔레비전 장치 |
US17/431,246 US20220140273A1 (en) | 2019-02-26 | 2020-02-14 | Display device, display module, electronic device, and television device |
CN202080017114.0A CN113490976A (zh) | 2019-02-26 | 2020-02-14 | 显示装置、显示模块、电子设备及电视装置 |
JP2021501135A JPWO2020174305A1 (ja) | 2019-02-26 | 2020-02-14 |
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JP (1) | JPWO2020174305A1 (ja) |
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CN113490976A (zh) | 2021-10-08 |
JPWO2020174305A1 (ja) | 2020-09-03 |
US20220140273A1 (en) | 2022-05-05 |
KR20210126631A (ko) | 2021-10-20 |
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