WO2020173086A1 - Capteur mems et dispositif électronique - Google Patents

Capteur mems et dispositif électronique Download PDF

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Publication number
WO2020173086A1
WO2020173086A1 PCT/CN2019/107329 CN2019107329W WO2020173086A1 WO 2020173086 A1 WO2020173086 A1 WO 2020173086A1 CN 2019107329 W CN2019107329 W CN 2019107329W WO 2020173086 A1 WO2020173086 A1 WO 2020173086A1
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WO
WIPO (PCT)
Prior art keywords
magnet
sensitive
magnetic
mems
sensitive part
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PCT/CN2019/107329
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English (en)
Chinese (zh)
Inventor
邹泉波
冷群文
Original Assignee
歌尔微电子有限公司
北京航空航天大学青岛研究院
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Publication of WO2020173086A1 publication Critical patent/WO2020173086A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the present invention relates to the field of energy conversion, and more specifically, to a MEMS sensor and an electronic device using the sensor.
  • CMOS complementary metal-oxide-semiconductor
  • CMOS complementary metal-oxide-semiconductor
  • Capacitor sensing structure In the structure of a microphone, it usually includes a substrate and a back plate and a diaphragm formed on the substrate. There is a gap between the back plate and the diaphragm, so that the back plate and the diaphragm together form a flat plate. Capacitor sensing structure.
  • the gap or air flow resistance in the perforations caused by air viscosity becomes the dominant factor in the noise of MEMS microphones, which will limit the high signal-to-noise ratio performance of the microphone to a certain extent, and ultimately lead to poor performance of the microphone. .
  • the magnetic sensor and the magnet are respectively placed on two relatively moving planes, and the sound pressure will deform the diaphragm out of the plane, thereby changing the gap between the GMR and the magnet.
  • the sensor with this structure needs to accurately control the gap of the static position, and also needs to align the magnet and the GMR on two planes, which is not easy for semiconductor manufacturing.
  • An object of the present invention is to provide a new technical solution for the sensor.
  • a MEMS sensor comprising a sensitive film layer carried on a substrate and located in the XY plane, the sensitive film layer including a sensitive part and a fixed part separated from the sensitive part; Including the magnetic detection mechanism arranged on the sensitive part and the fixed part;
  • the magnetic detection mechanism includes a magnet arranged on the sensitive part, the magnetization direction of the magnet is in the Z-axis direction; and also includes a magnet arranged on the fixed part and located on opposite sides of the magnet in the X-axis direction. Magnetic resistance; the distance between the center of the two magnetic resistances to the center of the magnet is equal, and the sensing directions of the two magnetic resistances are the same, both in the X-axis direction; or,
  • the magnetic detection mechanism includes a magnet arranged on the fixed part, the magnetization direction of the magnet is in the Z-axis direction; and also includes a magnet arranged on the sensitive part and located on opposite sides of the magnet in the X-axis direction. Magnetic resistance; the distance from the center of the two magnetic resistances to the center of the magnet is equal, and the sensing directions of the two magnetic resistances are the same, both in the X-axis direction;
  • the resistance value of one magnetoresistance becomes larger, and the resistance value of the other magnetoresistor becomes smaller, and the amount of change is the same.
  • the two constitute a Wheatstone bridge.
  • the center plane of the magnet is coplanar with the center plane of the free magnetic layer in the magnetoresistance.
  • a support layer is further provided between the lower surface of the magnetoresistance and the sensitive film layer.
  • At least two magnetic detection mechanisms which are respectively distributed on opposite sides of the sensitive film layer.
  • a first cantilever beam extends outwards from two opposite sides of the sensitive part, and the magnetic detection mechanism is arranged on the first cantilever beam and the fixed part.
  • a first cantilever beam extends outwards on opposite sides of the sensitive part, and a second cantilever beam is provided at the free end of the first cantilever beam; the magnetic detection mechanism is provided on the second cantilever beam and fixed Ministry.
  • the pre-bending mechanism includes a cantilever part separated from the sensitive part and the fixed part on the sensitive film layer, and the cantilever part is provided with a Z-axis direction change between the free end and the sensitive part.
  • the sensitive part is suspended in the back cavity of the substrate, and one of the sides is fixed on the substrate; the magnetic detection mechanism is distributed at a position far away from the sensitive part and the substrate.
  • the sensitive part is suspended in the back cavity of the substrate, and its opposite sides are respectively fixed on the substrate; the magnetic detection mechanism is distributed in the middle of the sensitive part.
  • the MEMS sensor is a MEMS pressure sensor, a MEMS gas sensor, a MEMS microphone, a MEMS temperature sensor, a MEMS humidity sensor or a MEMS displacement sensor.
  • an electronic device including the above-mentioned MEMS sensor.
  • the magnet and the magnetoresistance are located in the same plane, the magnetoresistance electric signal is detected by the displacement in the Z axis direction, and finally the Wheatstone bridge is formed by the magnetoresistance on the opposite sides of the magnet.
  • Fig. 1 is a principle diagram of the magnetoresistance detection of the present invention.
  • Fig. 2 is a schematic diagram of the cooperation of the multi-magnetic resistance and the magnet of the present invention.
  • Fig. 3 is a schematic diagram of the structure of the sensor of the present invention.
  • Figure 4 is a schematic diagram of the cooperation between the pre-bending mechanism and the sensitive part of the present invention.
  • Fig. 5 is a schematic structural diagram of the first embodiment of the sensor of the present invention.
  • Fig. 6 is a schematic diagram of the second embodiment of the sensor of the present invention.
  • Fig. 7 is a schematic structural diagram of a third embodiment of the sensor of the present invention.
  • 8a to 8h are flow charts of the manufacturing process of the sensor of the present invention.
  • Fig. 9a is a simulation diagram of the magnetic field distribution in the embodiment shown in Fig. 2.
  • Fig. 9b is an enlarged view of the magnetoresistive linear detection area shown in Fig. 9b.
  • the MEMS sensor provided by the present invention may be a MEMS pressure sensor, a MEMS gas sensor, a MEMS microphone, a MEMS temperature sensor, a MEMS humidity sensor, a MEMS displacement sensor, or other sensors well known to those skilled in the art.
  • a pressure sensor when applied to a pressure sensor, the sensitive membrane is sensitive to external pressure, and changes in external pressure will drive the sensitive membrane to deform.
  • a displacement sensor When applied to a displacement sensor, a driving rod can be set to connect with the sensitive film, and the sensitive film is pushed by the driving rod to deform, which will not be listed here.
  • the present invention also provides an electronic device using the above MEMS sensor.
  • the electronic device may be a smart device well known to those skilled in the art such as a mobile phone, a tablet computer, a smart bracelet, and smart glasses.
  • the MEMS sensor provided by the present invention includes a sensitive film layer carried on a substrate and located in a plane.
  • the sensitive film layer includes a sensitive part and a fixed part separated from the sensitive part.
  • a magnetic detection mechanism is arranged on the fixed part and the sensitive part. When the external sound acts on the sensitive part, the sensitive part vibrates in a direction perpendicular to its surface, so that the magnetic detection mechanism outputs a changing electrical signal.
  • the fixed portion 1a and the sensitive portion 1b are separated from the same sensitive film layer.
  • the sensitive film layer is simultaneously deposited on the substrate during the MEMS manufacturing process, and can be separated by the process of etching the gap 7 open.
  • part of the edge of the sensitive part 1b can be connected to the substrate, and other parts can be suspended on the substrate (not shown in FIG. 3) to make it sensitive to external sound.
  • the etched gap 7 is also conducive to pressure equalization on both sides of the sensitive part 1b.
  • the fixing portion 1a is connected to the substrate (not shown in FIG. 3) and is not sensitive to external sounds.
  • the sensitive film is on the same level. For example, in a three-axis coordinate system, the sensitive film is in the XY plane.
  • the magnetic detection mechanism includes a magnet 6 arranged on the sensitive part 1b, and the magnetization direction of the magnet 6 is in the Z-axis direction.
  • the magnet 6 may be in the form of a magnetic thin film, and the magnetic thin film may be directly made of a magnetic material, or the thin film may be magnetized after being formed.
  • the magnetic film can be made of CoCrPt or CoPt.
  • the magnet 6 can be formed on the sensitive part 1b by deposition or other means well known to those skilled in the art, which will not be described in detail here.
  • the magnetic detection mechanism further includes magnetic resistors 3 arranged on the fixed portion 1a and located on opposite sides of the magnet 6 in the X-axis direction.
  • the magnetoresistance 3 preferably adopts a giant magnetoresistive sensor (GMR), a tunnel magnetoresistive sensor (TMR), or an anisotropic magnetoresistive sensor (AMR).
  • GMR giant magnetoresistive sensor
  • TMR tunnel magnetoresistive sensor
  • AMR anisotropic magnetoresistive sensor
  • FIG. 3 shows only the magnetic resistance 3 on one side of the magnet 6 due to the positional relationship of the sectional view.
  • the two sides of the magnet 6 are respectively provided with magnetic resistors 3, and the distance from the center of the two magnetic resistors 3 to the center of the magnet 6 is equal, and the sensing directions of the two giant magnetic resistors are the same, both in the X-axis direction.
  • Fig. 1 shows the working principle diagram of the magnetic detection mechanism of the present invention.
  • the magnet is located in the middle of the two magnetic resistors, and the magnetization direction of the magnetic resistors is in the vertical direction.
  • the upper end of the magnet is the N pole and the lower end is the S pole, and the magnetic field direction of the magnet returns from the N pole to the S pole.
  • the center position of the two magnetic resistances to the center of the magnet are the same, and the magnetic resistance and the magnet are both on the same surface.
  • the sensing directions of the two magnetic resistors are the same, for example, the sensing directions of the two magnetic resistors are both facing the positive direction of the X axis.
  • magnetoresistance usually includes a free magnetic layer, a non-magnetic layer, and a pinned layer.
  • the free magnetic layer is a functional layer of magnetoresistance. Due to the different sizes of magnetoresistance and magnet, in order to ensure the detection performance of the two magnetoresistances, in the initial position, the center plane of the magnet is coplanar with the center plane of the free magnetic layer in the magnetoresistance.
  • the two magnetoresistors sense the change in the magnetic field strength, and the resistance value of one magnetoresistor becomes larger, and the resistance value of the other magnetoresistor becomes smaller , And the amount of change is the same.
  • the magnetic resistances R- and R+ shown in Fig. 1 together can form a Wheatstone bridge to output the detected electrical signal.
  • the magnet in the magnetic detection mechanism, can also be placed on the fixed part, and the magnetic resistance can be placed on the sensitive part.
  • the magnetic detection mechanism can also output a changing electrical signal.
  • the magnet 6 and the magnetoresistor 3 are both arranged on the sensitive film layer.
  • a support layer 2 such as silicon oxide, can be deposited on the fixed portion 1a in advance.
  • the magnetic resistance 3 is formed on the support layer 2 to increase the height of the magnetic resistance 3.
  • the lead 4 can be deposited on the support layer 2 and connected to the magnetoresistor 3 to lead the signal of the magnetoresistor 3.
  • a protective layer 5 can be provided on the surface of the magnetoresistor 3 and the magnet 6 to protect the magnet 6 and the magnetoresistor 3 from damage.
  • the magnet and the magnetoresistance are located in the same plane, the magnetoresistance electric signal is detected by the displacement in the Z axis direction, and finally the Wheatstone bridge is formed by the magnetoresistance on the opposite sides of the magnet.
  • Fig. 2 shows another embodiment of the MEMS sensor of the present invention.
  • There are multiple magnetoresistances on both sides of the magnet and the number of magnetoresistances on both sides and the distance relative to the magnet are in one-to-one correspondence.
  • three magnetic resistances are provided on the left side of the magnet M, denoted as R1-, R2-, R3-; and three magnetic resistances are provided on the right side of the magnet M, denoted as R1+, R2+, R3+.
  • R1+, R1- correspond, R2+, R2- correspond, R3+, R3- correspond.
  • the center of R1+ and R1- is 3 ⁇ m away from the center of magnet M; the center of R2+ and R2- is 4 ⁇ m away from the center of magnet M; the center of R3+ and R3- is away from the center of magnet M It is 5 ⁇ m.
  • the magnetoresistance at different distances has different linear regions, sensitivity, and signal-to-noise ratio. The designer can choose the appropriate distance for combination according to actual needs.
  • Figures 9a and 9b show simulations of magnetoresistance at different distances in a magnetic field.
  • the abscissa represents the displacement of the magnet in the Z axis direction
  • the ordinate represents the magnetic field strength Bx(T) and the magnetic field change gradient dBx/dz(T/m).
  • the MEMS sensor of the present invention when the sacrificial layer is released, the sensitive film layer will be bent and deformed to a certain extent under the action of stress, which makes it more difficult for the magnet on the sensitive part to align with the magnetoresistance on the fixed part.
  • the MEMS sensor of the present invention also includes a pre-bending mechanism 9, refer to FIG. 4.
  • the pre-bending mechanism 9 includes a cantilever portion 1c on the sensitive film layer, and the cantilever portion 1c is separated from the sensitive portion 1b and the fixed portion 1a.
  • the sensitive film layer can be processed by an etching process to form the fixed portion 1a, the sensitive portion 1b, and the cantilever portion 1c that are independent of each other.
  • One end of the cantilever portion 1c is fixed.
  • one end of the cantilever portion 1c can be fixed on the substrate, and the other end can be suspended in the back cavity of the substrate.
  • a stress layer 8 is deposited on the surface of the cantilever portion 1c. After the cantilever portion 1c is released, the stress layer 8 changes the relative position between the free end of the cantilever portion 1c and the sensitive portion 1b in the Z-axis direction.
  • FIG. 4 shows that the free end of the cantilever portion 1c is higher than the sensitive portion 1b in the Z-axis direction.
  • the stress layer 8 formed at the position of the cantilever portion 1c can be a tensile stress layer or a compressive stress layer according to actual needs.
  • the sensitive film layer is released, under the stress of the stress layer 8 itself, the cantilever portion 1c is driven to warp (upward or downward) relative to the sensitive portion 1b.
  • a certain electrostatic force is applied between the cantilever portion 1c and the sensitive portion 1b, so that the sensitive portion 1b can be attracted toward the cantilever portion 1c under the action of the electrostatic force, thereby changing the position of the sensitive portion 1b.
  • the degree of displacement of the sensitive part 1b can be adjusted according to the magnitude of the electrostatic force, and finally the purpose of aligning the magnet on the sensitive part 1b with the magnetoresistance on the fixed part 1a is achieved.
  • Figure 5 shows a specific embodiment of a MEMS sensor of the present invention.
  • the sensitive part 50 is fixedly connected to the substrate through its fixed end 500, and other positions are suspended on the substrate.
  • the two opposite sides of the sensitive part 50 respectively extend a first cantilever beam 501 outward, and the magnetic detection mechanism is arranged on the first cantilever beam 501 and the fixed part.
  • a magnet 52 is provided on the first cantilever beam 501, and a first magnetic resistance unit 53 and a second magnetic resistance unit 54 are respectively provided on both sides of the first cantilever beam 501.
  • the first magnetoresistive unit 53 and the second magnetoresistive unit 54 on both sides of the same cantilever form a Wheatstone bridge.
  • the magnetic detection mechanisms between different cantilever beams are combined together to jointly output changing electrical signals.
  • the pre-bending mechanism 51 is arranged on a side away from the fixed end 500 of the sensitive part 50.
  • a second cantilever beam 5002 is provided at the free end of the first cantilever beam 5001; the magnetic detection mechanism is provided on the second cantilever beam 5002 and fixed Ministry.
  • the first cantilever beam 5001 extends from the sensitive part, and the center position of the second cantilever beam 5002 is connected with the first cantilever beam 5001, and the two form a T-shaped structure.
  • Two magnets are respectively provided at both ends of the second cantilever beam 5002, and two magnetoresistive units are respectively provided on two opposite sides of each magnet.
  • the sensitive portion 50 has fixed ends 500 on opposite sides, which are fixedly connected to the substrate. Other positions of the sensitive part 50 are suspended in the back cavity of the substrate, and the magnetic detection mechanism is distributed in the middle position of the sensitive part 50. That is, the first cantilever beams 501 are respectively on opposite sides of the central area of the sensitive part 50. A plurality of pre-bending mechanisms 51 are provided, which are distributed in the middle position of the sensitive part 50 to ensure the balance of adjustment of the position of the middle region of the sensitive part 50.
  • 8a to 8h show a flow chart of one of the manufacturing processes of the MEMS sensor of the present invention.
  • an insulating layer 101 and a sensitive film layer 102 are sequentially deposited on the substrate 100.
  • the substrate 100 can be a single crystal silicon substrate, and its thickness can be 0.1-10 ⁇ m.
  • the insulating layer 101 can be made of silicon oxide, and the sensitive film layer 102 can be made of materials known to those skilled in the art such as polysilicon.
  • a layer of silicon oxide is continuously deposited on the sensitive film layer 102, and the silicon oxide is patterned to form a support layer 103 at a corresponding position of the sensitive film layer 102.
  • a magnet 104 is formed on a corresponding position of the sensitive film layer 102 through a lift-off process or a patterning process.
  • a photoresist can be formed on the sensitive film layer 102, and the photoresist can be etched to form a photolithography pattern; a magnet film layer is deposited on the photoresist by PVD, and finally the photoresist is removed to form a magnet picture of.
  • the magnet film layer can be deposited on the sensitive film layer 102 by means of PVD, and then the magnet film layer can be etched by the IBE process to form the pattern of the magnet.
  • the magnetoresistance 105 is formed on the support layer 103 through a lift-off process or a patterning process, for example, GMR or TMR may be formed.
  • a lead 106 is formed on the support layer 103, and the lead 106 is connected to the magnetoresistor 105 to lead the electrical signal of the magnetoresistor 105.
  • the lead 106 can be made of metal aluminum or a conductive film composed of Cr and Au.
  • the lead 106 is connected to the magnetoresistor 105, and conducts the signal of the magnetoresistor 105 to an appropriate position for subsequent lead out.
  • the lead 106 can be formed by PVD combined with Liftoff process or wet etching process, which will not be described in detail here.
  • the molding temperature of PVD is relatively low, and it can even be carried out at room temperature.
  • a protective layer 107 is deposited on the outer surface of the magnet and magnetoresistive for protection.
  • the protective layer 107 is etched at the position of the lead 106 to expose part of the lead 106.
  • a pad is formed at a corresponding position of the protective layer 107 to lead out the lead 106.
  • the sensitive film layer located between the magnet and the magnetoresistance is etched to form a gap 1020 to separate the sensitive film layer into a fixed portion 110 and a sensitive portion 109.
  • the substrate 100 is etched, and the insulating layer 101 is removed by etching to release the sensitive part 109, and finally the MEMS sensor of the present invention is formed.

Abstract

L'invention concerne un capteur MEMS et un dispositif électronique selon lesquels une couche de film sensible comprend une partie sensible (1b) et une partie fixe (1a); un mécanisme de détection magnétique comprend un aimant (6) disposé sur la partie sensible (1b), et comprend en outre des magnétorésistances (3) disposées sur la partie fixe (1a) et situées respectivement des deux côtés opposés de l'aimant (6) dans la direction d'axe X; les distances des centres des deux magnétorésistances (3) au centre de l'aimant (6) sont égales, et les deux magnétorésistances (3) ont la même direction de détection, qui est dans la direction d'axe X; et lorsque la partie sensible (1b) vibre dans la direction d'axe Z, la valeur de résistance de l'une des magnétorésistances (3) augmente et la valeur de résistance de l'autre magnétorésistance (3) diminue, les quantités de variation sont les mêmes, et ces deux dernières constituent un pont de Wheatstone. Étant donné qu'il est facile de commander le processus d'alignement de l'aimant (6) et des magnétorésistances (3), et qu'il est possible de réduire la taille de l'aimant (6) et des magnétorésistances (3), la miniaturisation du capteur est obtenue. Par ailleurs, il est également facile d'améliorer la performance de détection du capteur.
PCT/CN2019/107329 2019-02-25 2019-09-23 Capteur mems et dispositif électronique WO2020173086A1 (fr)

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CN201910137095.4A CN109941956B (zh) 2019-02-25 2019-02-25 Mems传感器及电子设备
CN201910137095.4 2019-02-25

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CN109883456A (zh) * 2019-04-02 2019-06-14 江苏多维科技有限公司 一种磁电阻惯性传感器芯片
CN111044951B (zh) * 2019-11-27 2022-06-24 北京航空航天大学青岛研究院 三轴磁场传感器及其制造方法
CN211089970U (zh) * 2019-12-26 2020-07-24 歌尔股份有限公司 一种mems传感器和电子设备
CN111885472B (zh) * 2020-06-24 2021-12-31 歌尔微电子有限公司 微机电系统麦克风、麦克风单体及电子设备
CN212572963U (zh) * 2020-07-06 2021-02-19 瑞声新能源发展(常州)有限公司科教城分公司 一种压电式mems麦克风
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CN113029204B (zh) * 2021-03-01 2023-06-23 歌尔微电子股份有限公司 传感器和电子设备
CN113630704B (zh) * 2021-07-30 2023-03-28 歌尔微电子股份有限公司 微机电系统麦克风、麦克风单体及电子设备
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