WO2020172929A1 - 一种柔性oled器件及其制备方法 - Google Patents

一种柔性oled器件及其制备方法 Download PDF

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Publication number
WO2020172929A1
WO2020172929A1 PCT/CN2019/079029 CN2019079029W WO2020172929A1 WO 2020172929 A1 WO2020172929 A1 WO 2020172929A1 CN 2019079029 W CN2019079029 W CN 2019079029W WO 2020172929 A1 WO2020172929 A1 WO 2020172929A1
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Prior art keywords
layer
groove
oled device
flexible oled
thin film
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PCT/CN2019/079029
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English (en)
French (fr)
Inventor
郭天福
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/476,291 priority Critical patent/US20200274083A1/en
Publication of WO2020172929A1 publication Critical patent/WO2020172929A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the invention relates to the field of display technology, in particular to a flexible OLED device and a preparation method thereof.
  • OLED Organic Light-Emitting Diode
  • OLED organic electric laser display device
  • organic light emitting semiconductor organic light emitting semiconductor
  • the basic structure of OLED is a thin, transparent, semi-conducting indium tin oxide (ITO) connected to the positive electrode of electricity, plus another metal-faced cathode, wrapped in a sandwich structure.
  • ITO indium tin oxide
  • the entire structure layer includes: hole transport layer (HTL), light emitting layer (EL) and electron transport layer (ETL).
  • HTL hole transport layer
  • EL light emitting layer
  • ETL electron transport layer
  • the positive electrode holes and the surface cathode charges When the power is supplied to the appropriate voltage, the positive electrode holes and the surface cathode charges will combine in the light-emitting layer, and under the action of the Coulomb force, they will recombine with a certain probability to form excitons (electron-hole pairs) in an excited state.
  • the excited state is unstable in the normal environment.
  • the excitons in the excited state recombine and transfer energy to the luminescent material, making it transition from the ground state energy level to the excited state.
  • the excited state energy generates photons through the radiation relaxation process and releases light It can produce light, and the three primary colors of red, green and blue are produced according to different formulas, which constitute the basic colors.
  • OLED the characteristic of OLED is that it emits light by itself, unlike the thin film transistor liquid crystal display device (English full name: Thin The film transistor-liquid crystal display (TFT-LCD for short) needs backlight, so the visibility and brightness are high.
  • OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed. It has become One of the most important display technologies today is gradually replacing TFT-LCD is expected to become the next-generation mainstream display technology after LCD.
  • OLED can be made into a flexible display screen that can be bent on a flexible substrate, which is a huge advantage unique to OLED.
  • OLED products in the industry have been marketed, and many products have been applied to electronic products in daily life.
  • the most competitive advantage is its flexibility (ie flexibility), which improves the performance of OLED devices.
  • the application requirements of flexible to wearable products will inevitably lead to new electronic product design reforms.
  • An object of the present invention is to provide a flexible OLED device and a preparation method thereof to improve its flexibility.
  • an embodiment of the present invention provides a flexible OLED device, which includes a flexible substrate, an insulating layer, a thin film transistor layer, a flat layer, a pixel definition layer, an organic light emitting layer, and a thin film encapsulation layer arranged in sequence.
  • the insulating layer is disposed on the flexible substrate; the thin film transistor layer is disposed on the insulating layer; the flat layer is disposed on the thin film transistor layer; the pixel definition layer is disposed on the flat layer
  • the pixel definition layer includes a plurality of spaced openings and bumps arranged between two adjacent openings; the organic light emitting layer is arranged on the pixel definition layer; the thin film encapsulation layer covers the On the pixel defining layer and the organic light-emitting layer; at least one of the flat layer, the bumps of the pixel defining layer, and the thin film encapsulation layer is provided with a groove penetrating the film layer where it is located, and the groove is filled with The first material.
  • the grooves include two or more grooves, and the grooves are arranged in the film layer at intervals.
  • the groove includes a bottom surface, a left side surface and a right side surface connected to the film layer where it is located, and at least one of the left side surface and the right side surface includes an arc-shaped curved surface, a wavy curved surface, and a single bend One of the shape of a surface, a continuous bending surface, or an uneven surface, or a combination of the foregoing shapes.
  • left side and right side of the groove are both a single bending surface, and the left side and right side of the groove have the same bending direction.
  • left side and right side of the groove are both single bending surfaces, and the left side and right side of the groove have opposite bending directions.
  • the bending angle of the left side and the right side of the groove ranges from 60° to 180°.
  • the bending angle of the left side and the right side of the groove ranges from 60° to 180°.
  • the elastic modulus of the first material is less than 100Mpa.
  • the first material is selected from PVC or POE materials.
  • Another embodiment of the present invention provides a method for preparing a flexible OLED device, which includes: S1, providing a glass substrate, coating PI liquid on the glass substrate by a PI coating machine, and then curing at high temperature to prepare A flexible substrate, on which an insulating layer, a thin film transistor layer, a flat layer and a pixel definition layer are sequentially prepared on the flexible substrate, and the pixel definition layer includes a plurality of spaced openings and bumps arranged between two adjacent openings S2, patterning the flat layer, the bumps of the pixel definition layer, and the thin-film encapsulation layer by patterning the flat layer, the pixel definition layer, and the thin film encapsulation layer to prepare a groove penetrating the film layer, and filling the groove First material; S3, exposing and developing the pixel defining layer; S4, preparing an organic light emitting layer and a thin film encapsulation layer on the pixel defining layer.
  • the present invention relates to a flexible OLED device and a preparation method thereof, wherein the flexible OLED device is prepared through at least one film layer of the flat layer, the bump of the pixel definition layer and the thin film encapsulation layer through the photolithography technology.
  • At least one of the left side and right side of the groove and the film layer where the groove is connected is one of an arc-shaped curved surface, a wavy curved surface, a single bending surface, a continuous bending surface, or a concave-convex surface Or a combination of the above shapes, and then fill the groove with an elastic modulus less than 100
  • the first material of Mpa utilizes the flexibility of the first material to achieve the effect of simultaneously enhancing the overall inward and outward bending flexibility of the flexible OLED device, and improving the flexibility of the OLED device.
  • FIG. 1 is a schematic structural diagram of Embodiment 1 of a flexible OLED device of the present invention.
  • FIG. 2 is a schematic structural diagram of Embodiment 2 of the flexible OLED device of the present invention.
  • FIG. 3 is a schematic diagram of the first preparation of Embodiment 1 of the flexible OLED device of the present invention.
  • FIG. 4 is a schematic diagram of the second preparation of Embodiment 1 of the flexible OLED device of the present invention.
  • FIG. 5 is a third schematic diagram of the preparation of Embodiment 1 of the flexible OLED device of the present invention.
  • FIG. 6 is a fourth schematic diagram of the preparation of Embodiment 1 of the flexible OLED device of the present invention.
  • FIG. 7 is a fifth schematic diagram of the preparation of Embodiment 1 of the flexible OLED device of the present invention.
  • FIG. 8 is a schematic diagram of the sixth preparation of Embodiment 1 of the flexible OLED device of the present invention.
  • FIG. 9 is a seventh schematic diagram of the preparation of Embodiment 1 of the flexible OLED device of the present invention.
  • FIG. 10 is a schematic diagram of the second preparation of Embodiment 2 of the flexible OLED device of the present invention.
  • FIG. 11 is a schematic diagram of the third preparation of Embodiment 2 of the flexible OLED device of the present invention.
  • FIG. 12 is a fourth schematic diagram of the preparation of Embodiment 2 of the flexible OLED device of the present invention.
  • FIG. 13 is a fifth schematic diagram of the preparation of Embodiment 2 of the flexible OLED device of the present invention.
  • FIG. 14 is a schematic diagram of the sixth preparation of Embodiment 2 of the flexible OLED device of the present invention.
  • FIG. 15 is a schematic diagram of the seventh preparation of Embodiment 2 of the flexible OLED device of the present invention.
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • the flexible OLED device of this embodiment includes a flexible substrate 1, an insulating layer 2, a thin film transistor layer 3, a flat layer 4, a pixel definition layer 5, an organic light emitting layer 6 and a thin film encapsulation layer 7 arranged in sequence.
  • the flexible substrate 1 is coated on a clean glass substrate by a PI (full English name: polyimide film; polyimide) coating machine, and is obtained by high temperature curing and other processes. Because the PI film has excellent high and low temperature resistance, electrical insulation, adhesion, radiation resistance, and dielectric resistance, the PI substrate made from it has good flexibility.
  • PI full English name: polyimide film; polyimide
  • the insulating layer 2 is disposed on the flexible substrate 1 and is generally mainly composed of SiNx and SiOx.
  • the insulating layer 2 thus formed is relatively dense and flat.
  • the thin film transistor layer 3 is disposed on the insulating layer 2, and the flat layer 4 is disposed on the thin film transistor layer 3.
  • the thin film transistor layer 3 and the flat layer 4 are provided with a gate, a source, and a drain.
  • a positive voltage is applied to the gate, an electric field is generated between the gate and the semiconductor layer. Under the action of this electric field, an electron flow channel is formed, and a conductive state is formed between the source and the drain.
  • the greater the voltage applied to the grid the more electrons are attracted, so the on-current is greater.
  • a negative voltage is applied to the gate, a closed state is formed between the source and the drain.
  • the organic light-emitting layer 6 is disposed on the pixel defining layer 5 and includes: a hole transport layer, a light-emitting layer, and an electron transport layer.
  • the hole transport layer is disposed on the polyimide substrate; the light emitting layer is disposed on the hole transport layer; the electron transport layer is disposed on the light emitting layer.
  • the hole transport layer controls the transport of holes, and further controls the recombination of holes and electrons in the light-emitting layer, thereby improving luminous efficiency.
  • the electron transport layer controls the transport of electrons, which in turn controls the recombination of electrons and holes in the light-emitting layer, thereby improving luminous efficiency.
  • the thin film encapsulation layer 7 is coated on the pixel definition layer and the organic light emitting layer, which effectively prevents the internal structure of the flexible OLED device from being corroded by water and oxygen, and effectively improves the service life of the flexible OLED device.
  • the pixel definition layer 5 is arranged on the flat layer 4.
  • the pixel definition layer 5 includes a plurality of openings arranged at intervals and bumps 51 arranged between two adjacent openings.
  • the flat layer 4, the bump 51 of the pixel definition layer 5, and the thin film encapsulation layer 7 is provided with a groove penetrating the film layer where it is located, wherein the groove may also include two Or more, these grooves are arranged in the film layer at intervals.
  • the groove includes a groove bottom surface 81, a groove left side surface 82 and a groove right side surface 83 connected to the film layer where it is located, at least one of the groove left side surface 82 and the groove right side surface 83
  • the side surface includes one of an arc-shaped curved surface, a wavy curved surface, a single bending surface, a continuous bending surface, or a concave-convex surface, or a combination of the foregoing shapes.
  • the bumps 51 of the pixel definition layer 5 are each provided with at least one groove that penetrates the pixel definition layer 5 to the upper surface of the flat layer 4 from top to bottom.
  • the left side surface 82 of the groove and the right side surface 83 of the groove are both single bending surfaces.
  • the bending direction of the left side surface 82 of the groove and the right side surface 83 of the groove are the same.
  • the bending angle of 82 and the right side surface 83 of the groove ranges from 60° to 180°.
  • the bending angle range of the left side 82 of the groove and the right side 83 of the groove is less than 60°, the current construction technology cannot meet this requirement, and the production is more difficult; if the left side 82 of the groove and the right side of the groove
  • the bending angle range of 83 is greater than 180°, the effect of enhancing its flexibility is not obvious.
  • the groove is filled with a first material 9, wherein the elastic modulus of the first material 9 is less than 100Mpa.
  • the first material 9 may be selected from PVC or POE. In this way, the flexibility of the first material 9 can be utilized to achieve the effect of simultaneously enhancing the flexibility of the flexible OLED device as a whole inward and outward bending, and improving the flexibility of the OLED device.
  • the groove is prepared by photolithography technology, and the photolithography technology includes wet etching or dry etching.
  • the wet etching is a technique of immersing the etching material in an etching solution for etching. It is a pure chemical etching with excellent selectivity, and the current film will stop after etching without damage. A thin film of other materials underneath.
  • Dry etching is a technique that uses plasma to etch thin films. When the gas exists in the form of plasma, it has two characteristics: On the one hand, the chemical activity of these gases in the plasma is much stronger than in the normal state.
  • the electric field can also be used to guide and accelerate the plasma to make it have a certain amount of energy.
  • the plasma When it bombards the surface of the etched object, it will be etched The atoms of the material are knocked out, so as to achieve the purpose of using physical energy transfer to achieve etching.
  • the bumps 51 of the pixel definition layer 5 are each provided with at least one groove that penetrates the pixel definition layer 5 to the upper surface of the flat layer 4 from top to bottom.
  • the left side surface 82 of the groove and the right side surface 83 of the groove are both single bending surfaces.
  • the bending direction of the left side surface 82 of the groove and the right side surface 83 of the groove are opposite, and the left side surface of the groove
  • the bending angle of 82 and the right side surface 83 of the groove ranges from 60° to 180°.
  • the bending angle range of the left side 82 of the groove and the right side 83 of the groove is less than 60°, the current construction technology cannot meet this requirement, and the production is more difficult; if the left side 82 of the groove and the right side of the groove
  • the bending angle range of 83 is greater than 180°, the effect of enhancing its flexibility is not obvious.
  • the groove is filled with a first material 9, wherein the elastic modulus of the first material 9 is less than 100Mpa.
  • the first material 9 may be selected from PVC or POE. In this way, the flexibility of the first material 9 can be utilized to achieve the effect of simultaneously enhancing the flexibility of the flexible OLED device as a whole inward and outward bending, and improving the flexibility of the OLED device.
  • this embodiment provides a method for preparing the flexible OLED device of Embodiment 1 of the present invention. This includes providing a glass substrate, coating PI liquid on the glass substrate by a PI coater, and then curing at a high temperature to prepare a flexible substrate 1, on which an insulating layer 2 and a thin film transistor layer are sequentially prepared 3.
  • this embodiment provides a method for preparing the flexible OLED device according to Embodiment 2 of the present invention. Including: providing a glass substrate, coating PI liquid on the glass substrate by a PI coater, and then curing at a high temperature to prepare a flexible substrate 1, on which an insulating layer 2 and a thin film transistor are sequentially prepared Layer 3, flat layer 4; a first pixel defining layer is prepared on the flat layer 4, and the first pixel defining layer is patterned by photolithography technology to prepare the first pixel defining layer The first groove is filled with a first material 9 in the first groove; a second pixel definition layer is prepared on the first pixel definition layer, and the second pixel definition layer is patterned by photolithography.

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Abstract

一种柔性OLED器件及其制备方法。其中柔性OLED器件包括柔性基板（1）、绝缘层（2）、薄膜晶体管层（3）、平坦层（4）、像素定义层（5）、有机发光层（6）和薄膜封装层（7）。其中柔性OLED器件通过光刻技术在其平坦层（4）、像素定义层（5）的凸块（51）和薄膜封装层（7）中的至少一个膜层中制备出贯穿其所在膜层的凹槽，所述凹槽与其所在膜层相接的左侧面（82）和右侧面（83）中的至少一个侧面为弧形曲面、波浪曲面、单一弯折面、连续弯折面或者凹凸面中的一种形状或是上述形状之间的组合，然后在所述凹槽中填充弹性模量小于100Mpa的第一材料（9），利用第一材料（9）的柔韧性，从而达到同时增强柔性OLED器件整体向内和向外弯曲的柔性性能，提升OLED器件的饶曲性能的效果。

Description

一种柔性OLED器件及其制备方法 技术领域
本发明涉及显示技术领域，具体涉及一种柔性OLED器件及其制备方法。
 背景技术
OLED(英文全称：Organic Light-Emitting Diode, 简称OLED)器件又称为有机电激光显示装置、有机发光半导体。OLED的基本结构是由一薄而透明具有半导体特性的铟锡氧化物(ITO)与电力之正极相连，再加上另一个金属面阴极，包成如三明治的结构。整个结构层中包括了:空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)。当电力供应至适当电压时，正极空穴与面阴极电荷就会在发光层中结合，在库伦力的作用下以一定几率复合形成处于激发态的激子（电子-空穴对），而此激发态在通常的环境中是不稳定的，激发态的激子复合并将能量传递给发光材料，使其从基态能级跃迁为激发态，激发态能量通过辐射驰豫过程产生光子，释放出光能，产生光亮，依其配方不同产生红、绿和蓝RGB三基色，构成基本色彩。
首先OLED的特性是自己发光，不像薄膜晶体管液晶显示装置（英文全称：Thin film transistor-liquid crystal display，简称TFT-LCD）需要背光，因此可视度和亮度均高。其次OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一，正在逐步替代 TFT-LCD，有望成为继LCD之后的下一代主流显示技术。
 技术问题
其中OLED可以在柔性基板上做成能弯曲的柔性显示屏，这更是OLED所特有的巨大优势。目前行业内OLED产品已经市场化，许多产品已经应用到生活中的电子产品上，对于OLED器件而言，最有竞争力的优势是它的饶曲性（即柔性，flexible），提升OLED器件的柔性至可穿戴产品的应用需求，必然会引起新的电子产品设计改革。为了实现OLED产品的可穿戴化，改善目前OLED产品的柔性性能至关重要。因此需要寻求一种新型的柔性OLED器件的制备方法以提升其柔性性能。
 技术解决方案
本发明的一个目的是提供一种柔性OLED器件及其制备方法，以提升其柔性性能。
为了解决上述问题，本发明的一个实施方式提供了一种柔性OLED器件，其中包括依次设置的：柔性基板、绝缘层、薄膜晶体管层、平坦层、像素定义层、有机发光层以及薄膜封装层。其中所述绝缘层设置于所述柔性基板上；所述薄膜晶体管层设置于所述绝缘层上；所述平坦层设置于所述薄膜晶体管层上；所述像素定义层设置于所述平坦层上，所述像素定义层包括多个间隔设置的开口及设置在相邻两个开口间的凸块；所述有机发光层设置于所述像素定义层上；所述薄膜封装层包覆于所述像素定义层和有机发光层上；所述平坦层、像素定义层的凸块和薄膜封装层中的至少一个膜层中设有贯穿其所在膜层的凹槽，所述凹槽内填充有第一材料。
进一步地，其中所述凹槽包括2个或以上数量，这些凹槽相互间隔设置在其所在膜层中。
进一步地，其中所述凹槽包括底面、与其所在膜层相接的左侧面和右侧面，所述左侧面和右侧面中至少一个侧面包括弧形曲面、波浪曲面、单一弯折面、连续弯折面或者凹凸面中的一种形状或是上述形状之间的组合。
进一步地，其中所述凹槽的左侧面和右侧面均为单一弯折面，所述凹槽的左侧面和右侧面的弯折方向相同。
进一步地，其中所述凹槽的左侧面和右侧面均为单一弯折面，所述凹槽的左侧面和右侧面的弯折方向相反。
进一步地，其中所述凹槽的左侧面和右侧面的弯折角度范围为60-180°。
进一步地，其中所述凹槽的左侧面和右侧面的弯折角度范围为60-180°。
进一步地，其中所述第一材料的弹性模量小于100Mpa。
进一步地，其中所述第一材料选自PVC或POE材料。
本发明的另一个实施方式提供了一种柔性OLED器件的制备方法，其中包括：S1，提供一玻璃基板，通过PI涂布机在所述玻璃基板上涂布PI液，然后经过高温固化制备出柔性基板，在所述柔性基板上依次制备出绝缘层、薄膜晶体管层、平坦层以及像素定义层，所述像素定义层包括多个间隔设置的开口及设置在相邻两个开口间的凸块；S2，通过光刻技术图案化处理所述平坦层、像素定义层的凸块和薄膜封装层中的至少一个膜层中制备出贯穿其所在膜层的凹槽，在所述凹槽中填充第一材料；S3，对所述像素定义层进行曝光显影；S4，在所述像素定义层上制备出有机发光层和薄膜封装层。
 有益效果
本发明涉及一种柔性OLED器件及其制备方法，其中柔性OLED器件通过光刻技术在其平坦层、像素定义层的凸块和薄膜封装层中的至少一个膜层中制备出贯穿其所在膜层的凹槽，所述凹槽与其所在膜层相接的左侧面和右侧面中的至少一个侧面为弧形曲面、波浪曲面、单一弯折面、连续弯折面或者凹凸面中的一种形状或是上述形状之间的组合，然后在所述凹槽中填充弹性模量小于100 Mpa的第一材料，利用第一材料的柔韧性，从而达到同时增强柔性OLED器件整体向内和向外弯曲的柔性性能，提升OLED器件的饶曲性能的效果。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明柔性OLED器件实施例1的结构示意图。
图2是本发明柔性OLED器件实施例2的结构示意图。
图3是本发明柔性OLED器件实施例1的第一制备示意图。
图4是本发明柔性OLED器件实施例1的第二制备示意图。
图5是本发明柔性OLED器件实施例1的第三制备示意图。
图6是本发明柔性OLED器件实施例1的第四制备示意图。
图7是本发明柔性OLED器件实施例1的第五制备示意图。
图8是本发明柔性OLED器件实施例1的第六制备示意图。
图9是本发明柔性OLED器件实施例1的第七制备示意图。
图10是本发明柔性OLED器件实施例2的第二制备示意图。
图11是本发明柔性OLED器件实施例2的第三制备示意图。
图12是本发明柔性OLED器件实施例2的第四制备示意图。
图13是本发明柔性OLED器件实施例2的第五制备示意图。
图14是本发明柔性OLED器件实施例2的第六制备示意图。
图15是本发明柔性OLED器件实施例2的第七制备示意图。
图中部件标识如下：
1、柔性基板                      2、绝缘层
3、薄膜晶体管层                  4、平坦层
5、像素定义层                    51、凸块
6、有机发光层                    7、薄膜封装层
81、凹槽底面                     82、凹槽左侧面
83、凹槽右侧面                   9、第一材料
 本发明的最佳实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1所示，本实施例的柔性OLED器件，包括依次设置的柔性基板1、绝缘层2、薄膜晶体管层3、平坦层4、像素定义层5、有机发光层6和薄膜封装层7。
其中所柔性基板1是通过PI（英文全称：polyimide film;聚酰亚胺）涂布机涂布在干净的玻璃基板上，经过高温固化等工艺处理得到的。由于PI薄膜具有优良的耐高低温性、电气绝缘性、粘结性、耐辐射性、耐介质性，由此制成的PI基板具有良好的柔韧性。
其中所述绝缘层2设置于所述柔性基板1上，其一般主要是由SiNx、SiOx构成的，由此形成的绝缘层2致密度和平整度比较好。
其中薄膜晶体管层3设置于所述绝缘层2上，所述平坦层4设置于所述薄膜晶体管层3上。所述薄膜晶体管层3和所述平坦层4中设有栅极、源极、漏极。当栅极施加正电压时，在栅极和半导体层之间会产生一个电场，在这个电场的作用下，形成了电子流道，使源极和漏极之间形成导通状态。在栅极施加电压越大，吸引的电子越多，所以导通电流越大。在栅极施加负电压时，源极和漏极之间形成关闭状态。
其中有机发光层6设置于所述像素定义层5上，包括：空穴传输层、发光层以及电子传输层。所述空穴传输层设置于所述聚酰亚胺基板上；所述发光层设置于所述空穴传输层上；所述电子传输层设置于所述发光层上。空穴传输层控制着空穴的传输，进而控制空穴在发光层中与电子的复合，进而提高发光效率。其中电子传输层控制着电子的传输，进而控制电子在发光层中与空穴的复合，进而提高发光效率。
其中所述薄膜封装层7包覆于所述像素定义层和有机发光层上，有效防止柔性OLED器件的内部结构被水氧侵蚀，有效提高柔性OLED器件的使用寿命。
其中所述像素定义层5设置于所述平坦层4上。其中所述像素定义层5包括多个间隔设置的开口及设置在相邻两个开口间的凸块51。
其中所述平坦层4、像素定义层5的凸块51以及所述薄膜封装层7中的至少一个膜层中设有贯穿其所在膜层的凹槽，其中所述凹槽还可以包括2个或以上数量，这些凹槽相互间隔设置在其所在膜层中。其中所述凹槽包括凹槽底面81、与其所在膜层相接的凹槽左侧面82和凹槽右侧面83，所述凹槽左侧面82和凹槽右侧面83中至少一个侧面包括弧形曲面、波浪曲面、单一弯折面、连续弯折面或者凹凸面中的一种形状或是上述形状之间的组合。
本实施例中，所述像素定义层5的凸块51上均设有至少一个自上而下贯穿所述像素定义层5直至所述平坦层4上表面的凹槽。所述凹槽左侧面82和凹槽右侧面83均为单一弯折面，所述凹槽左侧面82和凹槽右侧面83的弯折方向相同，所述凹槽左侧面82和凹槽右侧面83的弯折角度范围为60-180°。如若凹槽左侧面82和凹槽右侧面83的弯折角度范围小于60°，目前的施工工艺无法满足此要求，生产难度较大；如若凹槽左侧面82和凹槽右侧面83的弯折角度范围大于180°则增强其柔性性能效果不明显。
所述凹槽内填充有第一材料9，其中所述第一材料9的弹性模量小于100Mpa，具体的，所述第一材料9可以选自PVC或POE。由此可以利用第一材料9的柔韧性，从而达到同时增强柔性OLED器件整体向内和向外弯曲的柔性性能，提升OLED器件的饶曲性能的效果。
其中所述凹槽通过光刻技术制备而成，所述光刻技术包括湿法刻蚀或干法刻蚀。其中所述湿法刻蚀是将刻蚀材料浸泡在腐蚀液内进行腐蚀的技术，它是一种纯化学刻蚀，具有优良的选择性，刻蚀完当前薄膜就会停止，而不会损坏下面一层其他材料的薄膜。干法刻蚀是用等离子体进行薄膜刻蚀的技术。当气体以等离子体形式存在时，它具备两个特点:一方面等离子体中的这些气体化学活性比常态下时要强很多，根据被刻蚀材料的不同，选择合适的气体，就可以更快地与材料进行反应，实现刻蚀去除的目的;另一方面，还可以利用电场对等离子体进行引导和加速，使其具备一定能量，当其轰击被刻蚀物的表面时，会将被刻蚀物材料的原子击出，从而达到利用物理上的能量转移来实现刻蚀的目的。
实施例2
以下仅就本实施例与实施例1之间的相异之处进行说明，而其相同之处则在此不再赘述。
如图2所示，本实施例中，所述像素定义层5的凸块51上均设有至少一个自上而下贯穿所述像素定义层5直至所述平坦层4上表面的凹槽。所述凹槽左侧面82和凹槽右侧面83均为单一弯折面，所述凹槽左侧面82和凹槽右侧面83的弯折方向相反，所述凹槽左侧面82和凹槽右侧面83的弯折角度范围为60-180°。如若凹槽左侧面82和凹槽右侧面83的弯折角度范围小于60°，目前的施工工艺无法满足此要求，生产难度较大；如若凹槽左侧面82和凹槽右侧面83的弯折角度范围大于180°则增强其柔性性能效果不明显。
所述凹槽内填充有第一材料9，其中所述第一材料9的弹性模量小于100Mpa，具体的，所述第一材料9可以选自PVC或POE。由此可以利用第一材料9的柔韧性，从而达到同时增强柔性OLED器件整体向内和向外弯曲的柔性性能，提升OLED器件的饶曲性能的效果。
实施例3
如图3-9所示，本实施例提供了本发明实施例1的柔性OLED器件的制备方法。其中包括提供一玻璃基板，通过PI涂布机在所述玻璃基板上涂布PI液，然后经过高温固化制备出柔性基板1，在所述柔性基板1上依次制备出绝缘层2、薄膜晶体管层3、平坦层4；在所述平坦层4上制备出第一像素定义层，通过光刻技术图案化处理所述第一像素定义层，制备出贯穿所述第一像素定义层的所述第一凹槽，在所述第一凹槽中填充第一材料9；再在所述第一像素定义层上制备出第二像素定义层，通过光刻技术图案化处理所述第二像素定义层，制备出与所述第一凹槽相对于所述第一像素定义层的上表面对称的第二凹槽，在所述第二凹槽中填充第一材料9，形成设有至少一个凹槽8的所述像素定义层5；对所述像素定义层5进行曝光显影；在所述像素定义层上制备出有机发光层6和薄膜封装层7，最终形成如图1所示的柔性OLED器件。
实施例4
如图3、图10-15图所示，本实施例提供了本发明实施例2的柔性OLED器件的制备方法。其中包括：提供一玻璃基板，通过PI涂布机在所述玻璃基板上涂布PI液，然后经过高温固化制备出柔性基板1，在所述柔性基板1上依次制备出绝缘层2、薄膜晶体管层3、平坦层4；在所述平坦层4上制备出第一像素定义层，通过光刻技术图案化处理所述第一像素定义层，制备出贯穿所述第一像素定义层的所述第一凹槽，在所述第一凹槽中填充第一材料9；再在所述第一像素定义层上制备出第二像素定义层，通过光刻技术图案化处理所述第二像素定义层，制备出与所述第一凹槽相对于所述第一像素定义层的上表面对称的第二凹槽，在所述第二凹槽中填充第一材料9，形成设有至少一个凹槽8的所述像素定义层5；对所述像素定义层5进行曝光显影；在所述像素定义层上制备出有机发光层6和薄膜封装层7，最终形成如图2所示的柔性OLED器件。
以上对本发明所提供的柔性OLED器件及其制备方法进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种柔性OLED器件，其中包括：
    柔性基板；
    绝缘层，所述绝缘层设置于所述柔性基板上；
    薄膜晶体管层，所述薄膜晶体管层设置于所述绝缘层上；
    平坦层，所述平坦层设置于所述薄膜晶体管层上；
    像素定义层，所述像素定义层设置于所述平坦层上，所述像素定义层包括多个间隔设置的开口及设置在相邻两个开口间的凸块；
    有机发光层，所述有机发光层设置于所述像素定义层上；以及
    薄膜封装层，所述薄膜封装层包覆于所述像素定义层和有机发光层上；
    所述平坦层、像素定义层的凸块和薄膜封装层中的至少一个膜层中设有贯穿其所在膜层的凹槽，所述凹槽内填充有第一材料。
  2. 根据权利要求1所述的柔性OLED器件，其中所述凹槽包括2个或以上数量，这些凹槽相互间隔设置在其所在膜层中。
  3. 根据权利要求1所述的柔性OLED器件，其中所述凹槽包括底面以及与其所在膜层相接的左侧面和右侧面，所述左侧面和右侧面中至少一个侧面包括弧形曲面、波浪曲面、单一弯折面、连续弯折面或者凹凸面中的一种形状或是上述形状之间的组合。
  4. 根据权利要求3所述的柔性OLED器件，其中所述凹槽的左侧面和右侧面均为单一弯折面，所述凹槽的左侧面和右侧面的弯折方向相同。
  5. 根据权利要求3所述的柔性OLED器件，其中所述凹槽的左侧面和右侧面均为单一弯折面，所述凹槽的左侧面和右侧面的弯折方向相反。
  6. 根据权利要求4所述的柔性OLED器件，其中所述凹槽的左侧面和右侧面的弯折角度范围为60-180°。
  7. 根据权利要求5所述的柔性OLED器件，其中所述凹槽的左侧面和右侧面的弯折角度范围为60-180°。
  8. 根据权利要求1所述的柔性OLED器件，其中所述第一材料的弹性模量小于100Mpa。
  9. 据权利要求1所述的柔性OLED器件，其中所述第一材料选自PVC或POE材料。
  10. 一种柔性OLED器件的制备方法，其中包括：
    S1，提供一玻璃基板，通过PI涂布机在所述玻璃基板上涂布PI液，然后经过高温固化制备出柔性基板，在所述柔性基板上依次制备出绝缘层、薄膜晶体管层、平坦层以及像素定义层，所述像素定义层包括多个间隔设置的开口及设置在相邻两个开口间的凸块；
    S2，通过光刻技术图案化处理所述平坦层、像素定义层的凸块和薄膜封装层中的至少一个膜层中制备出贯穿其所在膜层的凹槽，在所述凹槽中填充第一材料；
    S3，对所述像素定义层进行曝光显影；
    S4，在所述像素定义层上制备出有机发光层和薄膜封装层。
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CN113707018B (zh) * 2021-08-26 2023-09-01 京东方科技集团股份有限公司 显示模组及显示装置
CN116096132A (zh) * 2022-05-26 2023-05-09 淮北翌光科技有限公司 有机电致发光器件及其制备方法

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