WO2020159003A1 - 평면형 플라즈마 진단 장치, 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치, 평면형 플라즈마 진단 장치가 매립된 정전척 - Google Patents
평면형 플라즈마 진단 장치, 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치, 평면형 플라즈마 진단 장치가 매립된 정전척 Download PDFInfo
- Publication number
- WO2020159003A1 WO2020159003A1 PCT/KR2019/004500 KR2019004500W WO2020159003A1 WO 2020159003 A1 WO2020159003 A1 WO 2020159003A1 KR 2019004500 W KR2019004500 W KR 2019004500W WO 2020159003 A1 WO2020159003 A1 WO 2020159003A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- planar
- antenna
- diagnostic apparatus
- plasma diagnostic
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
- H01Q1/523—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas between antennas of an array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
- H01Q1/525—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas between emitting and receiving antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0006—Particular feeding systems
- H01Q21/0031—Parallel-plate fed arrays; Lens-fed arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/065—Patch antenna array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/02—Non-resonant antennas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
- H05H1/0062—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using microwaves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
Definitions
- the present invention relates to a planar plasma diagnostic apparatus, and to provide a planar plasma diagnostic apparatus capable of obtaining a plasma density from a cutoff frequency by forming an ultra-high frequency transmitting and receiving antenna for measuring a plasma cutoff frequency in a planar shape.
- the present invention relates to a wafer-type plasma diagnostic apparatus in which a planar plasma diagnostic apparatus is embedded, and a planar plasma diagnostic apparatus capable of obtaining plasma density from the cutoff frequency by forming an ultra-high frequency transmitting and receiving antenna for measuring the plasma cutoff frequency in a planar shape is circular. It is to provide a wafer type plasma diagnostic apparatus formed by being embedded in a member.
- the present invention relates to an electrostatic chuck in which a planar plasma diagnostic apparatus is embedded, and a planar plasma diagnostic apparatus capable of obtaining plasma density from the cutoff frequency is embedded in an electrostatic chuck by forming an ultra-high frequency transmitting and receiving antenna for measuring the plasma cutoff frequency in a planar shape. It is to provide an electrostatic chuck embedded with a planar plasma diagnostic device formed by.
- the cut-off probe includes a probe that emits electromagnetic waves and a probe that receives electromagnetic waves.
- Plasma density can be measured using microwaves ranging from hundreds of MHz to tens of GHz.
- the microwave does not pass through the plasma, and if the frequency of the microwave is greater than the plasma frequency, the microwave passes through the plasma.
- the frequency at this point is called the cutoff frequency, and the plasma Density can be obtained from this cutoff frequency.
- Patent Publication No. 10-0473794 relates to a plasma electron density measuring device having a structure having a frequency probe of an antenna structure, and shows a specific shape of a transmitting and receiving antenna of a rod-shaped probe in FIG. 22, and a frequency probe inside the plasma. Since it is an insertion method, it may cause structural interference to the plasma, and there is a problem in that measurement accuracy is low due to perturbation of the surrounding plasma density by insertion of the probe.
- Patent Publication No. 10-1225010 relates to an ultra-high frequency probe having a rod-shaped radiating antenna and a loop-shaped receiving antenna, and FIG. 23 shows a specific shape of a rod-shaped radiating antenna and a loop-shaped receiving antenna, The receiving antenna is formed in a loop shape to increase the reception rate, but there is a problem that structural interference with the plasma may be caused because a frequency probe is inserted into the plasma.
- FIG. 24 shows a specific shape of the planar ring-type plasma diagnostic apparatus, and measures plasma density by sensing the cutoff frequency of the plasma
- the transmit antenna and the receive antenna are arranged in a concentric structure, and the receive antenna is formed in a ring shape to surround the transmit antenna.
- a planar ring type ultra-high frequency plasma diagnosis apparatus has a problem that it is difficult to measure a reliable plasma density by a resonance signal due to structural characteristics.
- Patent Publication No. 10-1756325 relates to a planar cone-type plasma diagnostic apparatus, and FIG. 25 shows a specific shape of a planar cone-type plasma diagnostic apparatus, and transmits to measure the plasma density by sensing the plasma cutoff frequency.
- the antenna and the receiving antenna are each formed in a conical shape.
- planar cone type cutoff probe has a problem that it is difficult to measure the plasma density because the intensity of the transmitted signal is too low.
- An object of the present invention is to solve the above problems, to increase the capacitive coupling between the transmitting and receiving antennas to prevent structural interference and to increase the strength of the transmitted signal to enable reliable plasma density measurement.
- Another object of the present invention is to prevent the resonance signal due to the structural characteristics to enable reliable plasma density measurement.
- Another object of the present invention is to embed a plasma diagnostic device in a wafer-shaped circular member to minimize plasma structural changes, thereby enabling plasma density measurement.
- another object of the present invention is to embed a plasma diagnostic device in an electrostatic chuck to enable plasma density measurement in real time during a plasma process.
- another object of the present invention is to embed a plasma diagnostic apparatus in an electrostatic chuck to enable plasma density measurement near the wafer in real time during a plasma process.
- Another object of the present invention is to make it possible to measure the uniformity of the plasma space at a low cost.
- the present invention relates to a planar plasma diagnosis apparatus, the transmitting antenna for applying a microwave with a variable frequency to the plasma;
- a receiving antenna for receiving the microwave from the plasma; Includes a body portion surrounding the transmitting antenna and the receiving antenna so as to be insulated from each other, including, the upper surface for applying the microwave of the transmitting antenna and the upper surface for receiving the microwave of the receiving antenna is flat, and the transmitting antenna Characterized in that the side surfaces of the upper surface of the receiving antenna face each other.
- the top surface of the planar transmission antenna and the planar reception antenna of the present invention is characterized in that the square.
- planar transmitting antenna and the planar receiving antenna of the present invention are characterized in that they are in the shape of a rectangular parallelepiped adjacent to each other in the body portion.
- the distance D between the upper surface of the transmitting antenna and the upper surface of the receiving antenna of the present invention is 1 mm or more and 15 mm or less.
- An insulating film is formed on the upper surface of the transmitting antenna and the upper surface of the receiving antenna of the present invention.
- the vertical length of the upper surface of the present invention is longer than the horizontal length of the upper surface, and the vertical length of the upper surface of the transmitting antenna and the vertical length of the upper surface of the receiving antenna are arranged to face each other.
- the length of the upper surface of the transmitting antenna and the receiving antenna of the present invention is characterized in that 2 mm or more and 30 mm or less.
- the width of the upper surface of the transmitting antenna and the receiving antenna of the present invention is characterized in that 0.1 mm or more and 10 mm or less.
- a cable for transmitting or receiving ultra-high frequency is connected through the lower surface of the transmitting antenna or the receiving antenna facing the upper surface of the transmitting antenna or the receiving antenna of the present invention.
- the cable for transmitting or receiving an ultra-high frequency within a range of 1/4 of the vertical length from the center of the vertical length of the lower surface of the present invention is characterized in that.
- the present invention relates to a planar plasma diagnosis apparatus, a transmitting antenna for applying a microwave with a variable frequency to the plasma; A receiving antenna for receiving the microwave from the plasma; The body portion surrounding the transmitting antenna and the receiving antenna so as to be insulated from each other; including, the upper surface for applying the microwave of the transmitting antenna and the upper surface for receiving the microwave of the receiving antenna is a semicircular plane, the transmitting antenna And the strings of the upper surface of the receiving antenna facing each other.
- the transmitting antenna and the receiving antenna of the present invention is characterized in that the semi-circular columnar shape disposed adjacent to each other in the body portion to face each other.
- the present invention relates to a planar plasma diagnosis apparatus, a transmitting antenna for applying a microwave with a variable frequency to the plasma;
- a receiving antenna for receiving the microwave from plasma; Includes a body portion surrounding the transmitting antenna and the receiving antenna so as to be insulated from each other, including, the upper surface for applying the microwave of the transmitting antenna and the upper surface for receiving the microwave of the receiving antenna is flat, and the transmitting antenna It is characterized in that the side surfaces of the upper surface of the receiving antenna are opposite to each other, and a pillar portion is formed extending from the upper surface.
- the present invention relates to a wafer-type plasma diagnostic apparatus in which a flat-type plasma diagnostic apparatus is embedded, wherein the flat-type plasma diagnostic apparatus includes a transmitting antenna that applies microwaves having a variable frequency to the plasma;
- a receiving antenna for receiving the microwave from the plasma; Includes a body portion surrounding the transmitting antenna and the receiving antenna so as to be insulated from each other, including, the upper surface for applying the microwave of the transmitting antenna and the upper surface for receiving the microwave of the receiving antenna is flat, and the transmitting antenna Characterized in that the side surface of the upper surface of the receiving antenna is opposite to each other, and at least one of the planar plasma diagnostic devices includes a circular member embedded therein.
- planar plasma diagnosis apparatus of the present invention is characterized in that it is embedded in the center or edge of the circular member.
- planar plasma diagnostic apparatus of the present invention is characterized in that a plurality of the circular members are embedded.
- the planar plasma diagnostic apparatus of the present invention is characterized in that a plurality of radially buried from the center of the circular member.
- planar plasma diagnostic apparatus of the present invention is characterized in that a plurality of lattice-shaped or cross-shaped are embedded in the circular member.
- the spectrum analyzer is characterized in that the length of the wiring connected to the plurality of planar plasma diagnostic apparatus is different.
- the switching circuit is characterized in that to be connected to the spectrum analyzer by sequentially operating the plurality of planar plasma diagnostic apparatus do.
- the present invention relates to an electrostatic chuck in which a planar plasma diagnosis apparatus is embedded, wherein the planar plasma diagnosis apparatus includes a transmitting antenna that applies a microwave having a variable frequency to the plasma; A receiving antenna for receiving the microwave from the plasma; Includes a body portion surrounding the transmitting antenna and the receiving antenna so as to be insulated from each other, including, the upper surface for applying the microwave of the transmitting antenna and the upper surface for receiving the microwave of the receiving antenna is flat, and the transmitting antenna The side surfaces of the upper surface of the receiving antenna are opposed to each other, and the planar plasma diagnosis apparatus is characterized in that it is embedded inside the surface of the electrostatic chuck.
- planar plasma diagnosis apparatus of the present invention is characterized in that it is embedded in the center or edge of the electrostatic chuck.
- the planar plasma diagnosis apparatus of the present invention is characterized in that a plurality of the electrostatic chuck is embedded.
- the planar plasma diagnostic apparatus of the present invention is characterized in that a plurality of radially buried from the center of the electrostatic chuck.
- planar plasma diagnostic apparatus of the present invention is characterized in that a plurality of lattice-shaped or cross-shaped are embedded.
- the spectrum analyzer is characterized in that the length of the wiring connected to the plurality of planar plasma diagnostic apparatus is different.
- the switching circuit is characterized in that to be connected to the spectrum analyzer by sequentially operating the plurality of planar plasma diagnostic apparatus do.
- the present invention has the effect that it is possible to increase the capacitive coupling between the transmitting and receiving antennas to prevent structural interference and to increase the strength of the transmitted signal, thereby enabling reliable plasma density measurement.
- the present invention has an effect capable of reliable plasma density measurement by preventing a resonance signal due to structural characteristics.
- the present invention has an effect capable of measuring the plasma density by minimizing the structure change of the plasma chamber by embedding the plasma diagnostic apparatus in a wafer-like circular member.
- the present invention has an effect capable of measuring plasma density in real time during a plasma process by embedding a plasma diagnostic apparatus in an electrostatic chuck.
- the present invention has an effect capable of measuring the plasma density near the wafer in real time during the plasma process by embedding the plasma diagnostic apparatus in the electrostatic chuck.
- the present invention has an effect capable of measuring the uniformity of the plasma space at a low cost.
- FIG. 1 is a planar plasma diagnostic apparatus of the present invention (a) a plan view, (b) a right side view, (c) a lower side view.
- Figure 2 shows an embodiment of a specific shape of the transmitting and receiving antenna of the planar plasma diagnostic apparatus of the present invention.
- FIG. 3 is a planar plasma diagnosis apparatus of the present invention, showing a specific numerical code on the plan view and the right view.
- Figure 4a shows a comparison of the frequency spectrum of the transmission coefficient of the present invention and the prior art planar ring type plasma diagnostic apparatus in a plasma chamber in a vacuum state.
- 4B shows a comparison of the frequency spectrum of the transmission coefficient of the present invention and the prior art planar ring type plasma diagnostic apparatus in a plasma chamber in which plasma is generated.
- FIG. 5 shows a frequency spectrum of transmission coefficients according to the interval D of transmitting and receiving antennas of a prior art planar ring type plasma diagnostic apparatus in a vacuum plasma chamber.
- FIG. 6 shows the frequency spectrum of the transmission coefficient according to the interval D of the transmitting and receiving antennas of the present invention in a plasma chamber in a vacuum state.
- FIG. 7 shows the frequency spectrum of the transmission coefficient according to the length B of the transmitting and receiving antenna of the present invention in a plasma chamber in which plasma is generated.
- FIG. 8 shows a frequency spectrum of a transmission coefficient according to a portion C of a power transmitting and receiving antenna of the present invention in a plasma chamber in which plasma is generated.
- FIG 9 shows another embodiment of a specific shape of the transmitting and receiving antenna of the planar plasma diagnosis apparatus of the present invention.
- FIG. 10 shows another embodiment of a specific shape of the transmitting and receiving antenna of the planar plasma diagnosis apparatus of the present invention.
- FIG. 11 shows a configuration in which a spectrum analyzer is connected to a transmit/receive antenna of the planar plasma diagnosis apparatus of the present invention.
- FIG. 12 shows an embodiment of a wafer-type plasma diagnostic apparatus in which the planar plasma diagnostic apparatus of the present invention is embedded.
- FIG 13 shows another embodiment of the wafer-type plasma diagnostic apparatus in which the planar plasma diagnostic apparatus of the present invention is embedded.
- FIG. 14 shows a wafer-type plasma diagnostic apparatus or electrostatic chuck in which the planar plasma diagnostic apparatus of the present invention is radially embedded.
- FIG. 15 shows a wafer-type plasma diagnostic apparatus or an electrostatic chuck in which the planar plasma diagnostic apparatus of the present invention is embedded in a lattice or cross shape.
- FIG. 16 shows an embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- FIG. 17 shows another embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- FIG. 18 shows another embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- FIG. 19 shows another embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- FIG. 20 shows another embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- FIG. 21 shows another embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- FIG. 22 shows a specific shape of a transmission/reception antenna of a prior art rod-shaped probe.
- FIG. 23 shows a specific shape of a prior art rod-shaped radiation antenna and a loop-shaped reception antenna.
- FIG. 24 shows a specific shape of a prior art planar ring type plasma diagnostic apparatus.
- 25 shows a specific shape of a prior art planar cone type plasma diagnostic apparatus.
- FIG. 1 is a planar plasma diagnostic apparatus of the present invention (a) a plan view, (b) a right side view, (c) shows a lower side view,
- Figure 2 is an embodiment of the specific shape of the transmitting and receiving antenna of the planar plasma diagnostic apparatus of the present invention Show an example.
- the present invention relates to a planar plasma diagnosis apparatus, a transmitting antenna 20 applying a microwave with a variable frequency to a plasma, a receiving antenna 30 receiving the microwave from the plasma, the It includes a body portion 10 surrounding the transmitting antenna 20 and the receiving antenna 30 so as to be insulated from each other, the upper surface for applying the microwave of the transmitting antenna 20 and the microwave of the receiving antenna 30
- the upper surface receiving the is flat, and the side surfaces of the upper surface of the transmitting antenna 20 and the receiving antenna 30 are opposite to each other.
- the transmission antenna 20 and the receiving antenna 30 are disposed to face each other so that the intensity of the transmitted signal increases as the capacitive coupling increases, and structural resonance of the plasma chamber and the plasma diagnostic apparatus It is possible to prevent the peak value of the transmission coefficient due to the characteristic from being extracted.
- the upper surface of the transmitting antenna 20 and the upper surface of the receiving antenna 30 are shown in a planar shape, and the vertical cutting surface of the receiving antenna 30 is shown in the right side view, and the lower side view. In the horizontal cross-section of the transmitting antenna 20 and the receiving antenna 30 is shown.
- a cable connected to transmit ultra-high frequencies through the lower surface of the transmitting antenna 20 facing the upper surface of the transmitting antenna 20 is illustrated in the lower side view, and the receiving antenna (in the right side view and the lower side view)
- a cable connected to receive ultra-high frequencies through the lower surface of the receiving antenna 30 facing the upper surface of 30) is shown.
- the planar transmit antenna 20 and the planar receive antenna 30 are in the shape of a rectangular parallelepiped adjacent to each other in the body portion 10, the planar transmit antenna and the planar receive antenna
- the upper surface 21 of the quadrangular, the lower surface 22 may also be rectangular.
- an insulating layer may be formed on the upper surface 21 of the transmitting antenna 20 and the upper surface 21 of the receiving antenna 30.
- FIG. 3 is a planar plasma diagnosis apparatus of the present invention, showing a specific numerical code on the plan view and the right view.
- a distance D between the upper surface 21 of the transmitting antenna 20 and the upper surface 21 of the receiving antenna 30 is 1 mm or more and 15 mm or less, and the upper surface
- the vertical length (B) of (21) is longer than the horizontal length of the upper surface (21) and the vertical length (B) of the upper surface (21) of the transmitting antenna (20) and the upper part of the receiving antenna (30).
- the vertical lengths B of the faces 21 are arranged to face each other.
- the vertical length B of the upper surface 21 of the transmitting antenna 20 and the vertical length B of the upper surface 21 of the receiving antenna 30 are 2 mm or more and 30 mm or less.
- the horizontal length A of the upper surface 21 of the transmitting antenna 20 and the receiving antenna 30 is preferably 0.1 mm or more and 10 mm or less.
- Cable 40 for connecting is connected, and the cable 40 for transmitting or receiving ultra-high frequency within a range of 1/4 of the vertical length B from the center of the vertical length B of the lower surface 22 ) Is preferably connected.
- Plasma density is 1 ⁇ 10 9 cm -3 ⁇ 5 ⁇ 10 11 cm - 3 in semiconductor process and display process conditions, and the corresponding cutoff frequency is 300 MHz ⁇ 6 GHz, so plasma is extracted from the area when extracting the cutoff frequency. It is difficult to extract the cutoff frequency due to the cavity characteristics by the structure of the diagnostic apparatus, that is, the structural resonance characteristics of the plasma chamber and the plasma diagnostic apparatus, making it difficult to measure the plasma density with reliability.
- Figure 4a shows the frequency spectrum of the transmission coefficient of the present invention and the prior art planar ring type plasma diagnostic apparatus in a vacuum plasma chamber
- Figure 4b is the present invention and the prior art planar plasma in a plasma chamber in which plasma is generated
- the frequency spectrum of the transmission coefficient of the ring type plasma diagnostic apparatus is compared and illustrated.
- the present invention is easier to extract the cutoff frequency than the conventional flat ring type plasma diagnosis apparatus, and thus reliable plasma density measurement can be made.
- Figure 5 shows the frequency spectrum of the transmission coefficient according to the transmission and reception antenna spacing (D) of the prior art planar ring type plasma diagnostic apparatus in a vacuum plasma chamber
- Figure 6 is the transmission and reception of the present invention in a vacuum plasma chamber The frequency spectrum of the transmission coefficient according to the antenna spacing D is shown.
- the plasma chamber and the plasma diagnostic apparatus may have structural resonance characteristics. Since the number of peak values of the transmission coefficient is more extracted, when the plasma frequency is located near the peak value of the transmission coefficient, it is difficult to extract the plasma frequency.
- the peak value of the transmission coefficient is in the high frequency region near 7 GHz due to the structural resonance characteristics of the plasma chamber and the plasma diagnostic apparatus, and the distance D between the transmitting and receiving antennas is 2 mm and 4 mm.
- the peak values of the transmission coefficients due to the structural resonance characteristics of the plasma chamber and the plasma diagnostic apparatus are disappearing as the size increases to 7 mm and 15 mm, and thus, the plasma frequency is not affected.
- the present invention is easier to extract the cutoff frequency than the conventional flat ring type plasma diagnosis apparatus, and accordingly, reliable plasma density measurement can be made.
- FIG. 7 shows the frequency spectrum of the transmission coefficient according to the length B of the transmitting and receiving antenna of the present invention in a plasma chamber in which plasma is generated.
- a peak value of a transmission coefficient is extracted at 2 GHz in a plasma chamber in which plasma is generated, and a vertical length (B) of a transmitting and receiving antenna is 2 mm, 4 mm, 8 mm, 20 mm, Even if the length is 30 mm, the peak value of the transmission coefficient is not affected, and only the peak value of the transmission coefficient due to the structural resonance characteristics of the plasma chamber and the plasma diagnostic apparatus is extracted only in a frequency range higher than 6 GHz.
- the length B of the transmission/reception antenna becomes longer than 30 mm, especially in the case of 60 mm, the peak value of the transmission coefficient due to the structural resonance characteristics of the plasma chamber and the plasma diagnostic apparatus is large even in a frequency range lower than 6 GHz. Since it is extracted, it is preferable that the length B of the transmission/reception antenna of the present invention is 30 mm or less, and the horizontal length A of the upper surface 21 of the transmission antenna 20 and the reception antenna 30 is It is preferable that it is 0.1 mm or more and 10 mm or less.
- FIG. 8 shows a frequency spectrum of a transmission coefficient according to an antenna power application site C of the present invention in a plasma chamber in which plasma is generated.
- a cable 40 from a frequency spectrum analyzer is connected to an antenna power application site C of the present invention to transmit and receive microwave microwaves to perform frequency analysis.
- the peak values of the transmission coefficients due to the structural resonance characteristics of the plasma chamber and the plasma diagnostic apparatus are extracted in the 4 GHz to 5 GHz region, making it difficult to extract the plasma frequency.
- the antenna power application portion C of the present invention has the vertical length B of the lower surface 22.
- the cable 40 from the frequency spectrum analyzer is connected at a position of 5 mm or less from the center of the vertical length B of the lower surface 22. That is, it is preferable that the cable for transmitting or receiving ultra-high frequency is connected within a range of 1/4 of the length B of the lower surface 22 from the center of the length B of the lower surface 22.
- FIG 9 shows another embodiment of a specific shape of the transmitting and receiving antenna of the planar plasma diagnosis apparatus of the present invention.
- the upper surface 21 for applying the microwave of the transmitting antenna 20 and the upper surface 21 for receiving the microwave of the receiving antenna 30 are semicircular planes, and the transmitting antenna ( 20) and the strings of the upper surface 21 of the receiving antenna 30 are opposed to each other.
- the upper surface 21 of the transmitting antenna 20 and the receiving antenna 30 is formed in a semicircular plane, and the upper surface of the transmitting antenna 20 and the receiving antenna 30 is formed.
- the area of the (21) can be formed to be wider to increase the signal strength, and the strings of the semicircular planes of the transmitting antenna 20 and the receiving antenna 30 are arranged to face each other, thereby increasing capacitive coupling.
- the intensity of the transmitted signal can also be kept strong.
- the transmitting antenna 20 and the receiving antenna 30 may be in the shape of a semi-circular pillar disposed adjacent to each other in the body portion 10 to face each other.
- FIG. 10 shows another embodiment of a specific shape of the transmitting and receiving antenna of the planar plasma diagnosis apparatus of the present invention.
- the upper surface 21 of the transmitting antenna 20 or the receiving antenna 30 of the present invention is formed in a rectangular plane, and the lower surface 22 from the upper surface 21 is formed as a pillar portion. While maintaining a large capacitive coupling on the upper surface 21, it is possible to reduce the manufacturing cost of the transmitting antenna 20 and the receiving antenna 30.
- the position of the pillar may be located at the center or edge of the upper surface 21.
- the upper surface 21 of the transmitting antenna 20 or the receiving antenna 30 is formed in a semicircular plane, and the lower surface 22 from the upper surface 21 is formed as a pillar portion.
- the position of the pillar may be located at the center or edge of the upper surface 21.
- FIG. 11 shows a configuration in which a spectrum analyzer is connected to a transmit/receive antenna of the planar plasma diagnosis apparatus of the present invention.
- the cable 40 from the frequency spectrum analyzer 50 is connected through the lower surface 22 of the transmitting antenna 20 or the receiving antenna 30 of the present invention, and the transmitting antenna 20 Is the power from the frequency spectrum analyzer 50, transmits microwave microwaves, and transmits the microwave microwaves transmitted from the transmitting antenna 20 through the plasma space, and then receives from the receiving antenna 30 through the frequency spectrum.
- the frequency spectrum is extracted from the analyzer 50 and analyzed.
- FIG. 12 shows an embodiment of a wafer-type plasma diagnostic apparatus in which the planar plasma diagnostic apparatus of the present invention is embedded.
- the flat-type plasma diagnostic apparatus 70 is formed by being embedded in the center or edge of the circular member 80, and the wafer-type plasma diagnostic The device is placed on the electrostatic chuck and connected to the spectrum analyzer 50 to measure the uniformity of the plasma space.
- the wafer type plasma diagnosis apparatus can be easily applied to an existing plasma chamber, plasma diagnosis is possible while minimizing the structure change of the existing plasma chamber.
- FIG 13 shows another embodiment of the wafer-type plasma diagnostic apparatus in which the planar plasma diagnostic apparatus of the present invention is embedded.
- a planar plasma diagnostic apparatus 70 is formed by being embedded in a center or edge of a circular member 80, and the wafer-type plasma diagnostic apparatus is placed on an electrostatic chuck and parallel to one spectrum analyzer 50. Is connected to measure the uniformity of the plasma space. Accordingly, it is possible to efficiently use the expensive spectrum analyzer 50 to measure the uniformity of the plasma space by the plurality of planar plasma diagnosis devices 70 at a low cost.
- the spectrum analyzer 50 has different lengths of wires connected to the plurality of planar plasma diagnosis apparatuses 70 to transmit and receive signals between the spectrum analyzer 50 and the plurality of planar plasma diagnosis apparatuses 70. It is possible to classify the time difference of to operate each planar plasma diagnosis apparatus 70.
- a switching circuit 60 is provided between the spectrum analyzer 50 and the plurality of planar plasma diagnostic apparatuses 70 to provide a switching operation between the spectrum analyzer 50 and the plurality of planar plasma diagnostic apparatuses 70 by a switching operation. It is possible to classify the time difference between the signals transmitted and received in each of the planar plasma diagnosis apparatus 70 to operate.
- the planar plasma diagnosis device 70 can be operated.
- FIG. 14 shows a wafer-type plasma diagnostic apparatus in which the planar plasma diagnostic apparatus of the present invention is radially embedded
- FIG. 15 shows a wafer-type plasma diagnostic apparatus in which the planar plasma diagnostic apparatus of the present invention is embedded in a lattice or cross shape. .
- a plurality of planar plasma diagnostic apparatuses 70 are embedded in a plurality of circular members 80 to more accurately measure plasma space uniformity. Accordingly, in the semiconductor process, the plasma space uniformity can be accurately measured from the center to the edge of the wafer, and the yield of the wafer can be further improved. Even if the flat plasma diagnosis apparatus 70 is embedded in the circular member 80 in multiple ways, one is It is connected to the spectrum analyzer 50 in parallel to enable analysis.
- the upper surface of the electrostatic chuck It is preferable to have a terminal.
- a radio transmitting/receiving device may be provided inside the circular member 80, and the signals of the transmitting antenna 20 and the receiving antenna 30 of the flat plasma diagnosis device may be wirelessly connected to the frequency spectrum analyzer 50.
- the transmitting antenna 20 and the receiving antenna 30 of the flat type plasma diagnostic device transmit wireless signals through the downward direction of the electrostatic chuck or the horizontal direction of the static chuck. It is desirable to avoid the plasma space by transmitting the radio signal to be transmitted.
- a memory is additionally provided inside the circular member 80 to store signals of the transmitting antenna 20 and the receiving antenna 30 of the flat plasma diagnosis apparatus, and the circular member 80 comes out of the plasma chamber or the plasma process At the moment of stopping, the signals of the transmitting antenna 20 and the receiving antenna 30 stored in the memory may be read.
- FIG. 16 shows an embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- the planar plasma diagnostic apparatus 70 is embedded in the center of the electrostatic chuck 90 and the planar plasma diagnostic apparatus 70 is in spectrum It is connected to the analyzer 50 to measure the uniformity of the plasma space in the center of the wafer in real time during the plasma process.
- the electrostatic chuck 90 has an effect that the uniformity of the plasma space can be easily measured even during the plasma process, and the uniformity of the plasma space can be measured even when the wafer is placed on the electrostatic chuck 90.
- FIG. 17 shows another embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- a planar plasma diagnosis device 70 is embedded between the center and the edge of the electrostatic chuck 90 and the planar plasma diagnosis device 70 is connected to the spectrum analyzer 50 to wafer in real time during the plasma process.
- the uniformity of the plasma space is measured at the center and edges.
- FIG. 18 shows another embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- a planar plasma diagnosis device 70 is buried so as to face outward on a side portion of the electrostatic chuck 90 and the planar plasma diagnosis device 70 is connected to the spectrum analyzer 50 in real time during the plasma process. As a result, the uniformity of the overall plasma space in the plasma chamber is measured.
- 19 and 20 show still other embodiments of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- a planar plasma diagnostic apparatus 70 is embedded at the edge of the electrostatic chuck 90 and the planar plasma diagnostic apparatus 70 is connected to the spectrum analyzer 50 to plasma in real time during the plasma process at the wafer edge. The uniformity of the space is measured.
- a planar plasma diagnostic device 70 is embedded in multiple edges of an electrostatic chuck 90 and the planar plasma diagnostic device 70 is connected to a spectrum analyzer 50 to perform real-time plasma processing at the edge of a wafer.
- the uniformity of the plasma space is measured.
- plasma density measurement at the edge of the wafer is more important as the defect rate at the edge of the wafer is reduced to further increase the yield of forming a semiconductor chip.
- FIG. 21 shows still another embodiment of the electrostatic chuck in which the planar plasma diagnosis apparatus of the present invention is embedded.
- a planar plasma diagnosis device 70 is formed by being buried in the center and an edge of the electrostatic chuck 90, and the planar plasma diagnosis device 70 is connected in parallel to one spectrum analyzer 50 Even if the symmetry of the plasma space is broken, the uniformity is measured according to the position. Accordingly, it is possible to efficiently use the expensive spectrum analyzer 50 to measure the uniformity of the plasma space by the plurality of planar plasma diagnosis devices 70 at a low cost.
- the spectrum analyzer 50 has different lengths of wires connected to the plurality of planar plasma diagnosis apparatuses 70 to transmit and receive signals between the spectrum analyzer 50 and the plurality of planar plasma diagnosis apparatuses 70. It is possible to classify the time difference of to operate each planar plasma diagnosis apparatus 70.
- a switching circuit 60 is provided between the spectrum analyzer 50 and the plurality of planar plasma diagnostic apparatuses 70 to provide a switching operation between the spectrum analyzer 50 and the plurality of planar plasma diagnostic apparatuses 70 by a switching operation. It is possible to classify the time difference between the signals transmitted and received in each of the planar plasma diagnosis apparatus 70 to operate.
- the planar plasma diagnosis device 70 can be operated.
- FIG. 14 shows an electrostatic chuck in which the planar plasma diagnostic apparatus of the present invention is radially embedded
- FIG. 15 shows an electrostatic chuck in which the planar plasma diagnostic apparatus of the present invention is embedded in a grid or cross shape.
- a plurality of planar plasma diagnosis apparatuses 70 are embedded in the electrostatic chuck 90 in multiple times to more accurately measure plasma space uniformity in real time during a plasma process. Accordingly, even when the symmetry of the plasma space is broken from the center to the edge of the wafer in the semiconductor process, the uniformity can be accurately measured according to the position, the yield of the wafer can be further improved, and the planar plasma diagnostic apparatus 70 is an electrostatic chuck. Even if it is buried multiple times in 90, it can be analyzed by being connected in parallel to one spectrum analyzer 50.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (27)
- 평면형 플라즈마 진단 장치에 있어서,주파수가 가변되는 마이크로웨이브를 플라즈마에 인가하는 송신 안테나;상기 플라즈마로부터 상기 마이크로웨이브를 수신하는 수신 안테나;상기 송신 안테나와 상기 수신 안테나가 서로 절연되도록 감싸는 몸체부;를 포함하고,상기 송신 안테나의 마이크로웨이브를 인가하는 상부면과 상기 수신 안테나의 마이크로웨이브를 수신하는 상부면이 평면형이고, 상기 송신 안테나와 상기 수신 안테나의 상기 상부면의 측면이 서로 대향하는 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 1 항에 있어서,상기 평면형 송신 안테나와 상기 평면형 수신 안테나의 상부면은 사각형인 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 2 항에 있어서,상기 평면형 송신 안테나와 상기 평면형 수신 안테나는 상기 몸체부 내에 서로 인접하여 서로 대향하도록 배치되는 직육면체 형상인 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 1 항에 있어서,상기 송신 안테나의 상기 상부면과 상기 수신 안테나의 상기 상부면의 간격(D)이 1 mm 이상 15 mm 이하인 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 1 항에 있어서,상기 송신 안테나의 상부면과 상기 수신 안테나의 상부면에 절연막이 형성되는 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 2 항에 있어서,상기 상부면의 세로 길이는 상기 상부면의 가로 길이보다 길고 상기 송신 안테나의 상기 상부면의 세로 길이와 상기 수신 안테나의 상기 상부면의 세로 길이가 서로 대향하도록 배치되는 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 6 항에 있어서,상기 송신 안테나와 상기 수신 안테나의 상기 상부면의 세로 길이는 2 mm 이상 30 mm 이하인 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 7 항에 있어서,상기 송신 안테나와 상기 수신 안테나의 상기 상부면의 가로 길이는 0.1 mm 이상 10 mm 이하인 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 1 항에 있어서,상기 송신 안테나 또는 상기 수신 안테나의 상기 상부면과 대향하는 상기 송신 안테나 또는 상기 수신 안테나의 하부면을 통하여 초고주파를 송신 또는 수신하기 위한 케이블이 연결되는 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 9 항에 있어서,상기 하부면의 세로 길이의 중심으로부터 상기 세로 길이의 1/4의 범위 내에서 초고주파를 송신 또는 수신하기 위한 상기 케이블이 연결되는 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 평면형 플라즈마 진단 장치에 있어서,주파수가 가변되는 마이크로웨이브를 플라즈마에 인가하는 송신 안테나;상기 플라즈마로부터 상기 마이크로웨이브를 수신하는 수신 안테나;상기 송신 안테나와 상기 수신 안테나가 서로 절연되도록 감싸는 몸체부;를 포함하고,상기 송신 안테나의 마이크로웨이브를 인가하는 상부면과 상기 수신 안테나의 마이크로웨이브를 수신하는 상부면이 반원 평면이고, 상기 송신 안테나와 상기 수신 안테나의 상기 상부면의 현이 서로 대향하는 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 제 11 항에 있어서,상기 송신 안테나와 상기 수신 안테나는 상기 몸체부 내에 서로 인접하여 서로 대향하도록 배치되는 반원 기둥 형상인 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 평면형 플라즈마 진단 장치에 있어서,주파수가 가변되는 마이크로웨이브를 플라즈마에 인가하는 송신 안테나;플라즈마로부터 상기 마이크로웨이브를 수신하는 수신 안테나;상기 송신 안테나와 상기 수신 안테나가 서로 절연되도록 감싸는 몸체부;를 포함하고,상기 송신 안테나의 마이크로웨이브를 인가하는 상부면과 상기 수신 안테나의 마이크로웨이브를 수신하는 상부면이 평면형이고, 상기 송신 안테나와 상기 수신 안테나의 상기 상부면의 측면이 서로 대향하며, 상기 상부면으로부터 기둥부가 연장되어 형성되는 것을 특징으로 하는 평면형 플라즈마 진단 장치.
- 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치에 있어서,상기 평면형 플라즈마 진단 장치는주파수가 가변되는 마이크로웨이브를 플라즈마에 인가하는 송신 안테나;상기 플라즈마로부터 상기 마이크로웨이브를 수신하는 수신 안테나;상기 송신 안테나와 상기 수신 안테나가 서로 절연되도록 감싸는 몸체부;를 포함하고,상기 송신 안테나의 마이크로웨이브를 인가하는 상부면과 상기 수신 안테나의 마이크로웨이브를 수신하는 상부면이 평면형이고, 상기 송신 안테나와 상기 수신 안테나의 상기 상부면의 측면이 서로 대향하며,적어도 하나의 상기 평면형 플라즈마 진단 장치가 매립되는 원형 부재를 포함하는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치.
- 제 14 항에 있어서,상기 평면형 플라즈마 진단 장치는 상기 원형 부재의 중심부 또는 가장자리에 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치.
- 제 14 항에 있어서,상기 평면형 플라즈마 진단 장치는 상기 원형 부재에 복수개가 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치.
- 제 16 항에 있어서,상기 평면형 플라즈마 진단 장치는 상기 원형 부재의 중심부로부터 방사형으로 복수개가 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치.
- 제 16 항에 있어서,상기 평면형 플라즈마 진단 장치는 상기 원형 부재에 격자형 또는 십자형으로 복수개가 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치.
- 제 16 항에 있어서,상기 복수개의 평면형 플라즈마 진단 장치에 병렬로 연결되는 스펙트럼 분석기를 더 포함하고,상기 스펙트럼 분석기는 상기 복수개의 평면형 플라즈마 진단 장치에 연결되는 배선의 길이가 서로 다른 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치.
- 제 16 항에 있어서,상기 복수개의 평면형 플라즈마 진단 장치에 연결되는 스위칭 회로와 스펙트럼 분석기를 더 포함하고,상기 스위칭 회로는 상기 복수개의 평면형 플라즈마 진단 장치를 순차적으로 동작하도록 하여 상기 스펙트럼 분석기에 연결되도록 하는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치.
- 평면형 플라즈마 진단 장치가 매립된 정전척에 있어서,상기 평면형 플라즈마 진단 장치는주파수가 가변되는 마이크로웨이브를 플라즈마에 인가하는 송신 안테나;상기 플라즈마로부터 상기 마이크로웨이브를 수신하는 수신 안테나;상기 송신 안테나와 상기 수신 안테나가 서로 절연되도록 감싸는 몸체부;를 포함하고,상기 송신 안테나의 마이크로웨이브를 인가하는 상부면과 상기 수신 안테나의 마이크로웨이브를 수신하는 상부면이 평면형이고, 상기 송신 안테나와 상기 수신 안테나의 상기 상부면의 측면이 서로 대향하며,상기 평면형 플라즈마 진단 장치는 상기 정전척의 표면 내부에 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 정전척.
- 제 21 항에 있어서,상기 평면형 플라즈마 진단 장치는 상기 정전척의 중심부 또는 가장자리에 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 정전척.
- 제 21 항에 있어서,상기 평면형 플라즈마 진단 장치는 복수개가 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 정전척.
- 제 23 항에 있어서,상기 평면형 플라즈마 진단 장치는 상기 정전척의 중심부로부터 방사형으로 복수개가 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 정전척.
- 제 23 항에 있어서,상기 평면형 플라즈마 진단 장치는 격자형 또는 십자형으로 복수개가 매립되는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 정전척.
- 제 23 항에 있어서,상기 복수개의 평면형 플라즈마 진단 장치에 병렬로 연결되는 스펙트럼 분석기를 더 포함하고,상기 스펙트럼 분석기는 상기 복수개의 평면형 플라즈마 진단 장치에 연결되는 배선의 길이가 서로 다른 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 정전척.
- 제 23 항에 있어서,상기 복수개의 평면형 플라즈마 진단 장치에 연결되는 스위칭 회로와 스펙트럼 분석기를 더 포함하고,상기 스위칭 회로는 상기 복수개의 평면형 플라즈마 진단 장치를 순차적으로 동작하도록 하여 상기 스펙트럼 분석기에 연결되도록 하는 것을 특징으로 하는 평면형 플라즈마 진단 장치가 매립된 정전척.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021514264A JP7085690B2 (ja) | 2019-01-31 | 2019-04-15 | 平面型プラズマ診断装置、平面型プラズマ診断装置が埋め立てられたウエハー型プラズマ診断装置、平面型プラズマ診断装置が埋め立てられた静電チャック |
US17/050,373 US11867643B2 (en) | 2019-01-31 | 2019-04-15 | Planar-type plasma diagnosis apparatus, wafer-type plasma diagnosis apparatus in which planar-type plasma diagnosis apparatus is buried, and electrostatic chuck in which planar-type plasma diagnosis apparatus is buried |
EP19912976.8A EP3780913A4 (en) | 2019-01-31 | 2019-04-15 | PLANAR-TYPE PLASMA DIAGNOSIS UNIT, SLICE-TYPE PLASMA DIAGNOSIS UNIT IN WHICH A PLANAR-TYPE PLASMA DIAGNOSIS UNIT IS BURIED, AND ELECTROSTATIC CHUCK IN WHICH A PLASMA-TYPE PLASMA DIAGNOSIS UNIT IS BURIED |
CN201980028803.9A CN112042282B (zh) | 2019-01-31 | 2019-04-15 | 平面型等离子体诊断装置、晶片型等离子体诊断装置及静电卡盘 |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2019-0012572 | 2019-01-31 | ||
KR1020190012572A KR102162826B1 (ko) | 2019-01-31 | 2019-01-31 | 평면형 플라즈마 진단 장치 |
KR10-2019-0032117 | 2019-03-21 | ||
KR1020190032099A KR102193678B1 (ko) | 2019-03-21 | 2019-03-21 | 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치 |
KR10-2019-0032099 | 2019-03-21 | ||
KR1020190032117A KR102193694B1 (ko) | 2019-03-21 | 2019-03-21 | 평면형 플라즈마 진단 장치가 매립된 정전척 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020159003A1 true WO2020159003A1 (ko) | 2020-08-06 |
Family
ID=71842162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2019/004500 WO2020159003A1 (ko) | 2019-01-31 | 2019-04-15 | 평면형 플라즈마 진단 장치, 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치, 평면형 플라즈마 진단 장치가 매립된 정전척 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11867643B2 (ko) |
EP (1) | EP3780913A4 (ko) |
JP (1) | JP7085690B2 (ko) |
CN (1) | CN112042282B (ko) |
WO (1) | WO2020159003A1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102340564B1 (ko) | 2021-02-19 | 2021-12-20 | 한국표준과학연구원 | 플라즈마 이온 밀도 측정 장치와 이를 이용한 플라즈마 진단 장치 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0927476A (ja) * | 1995-07-12 | 1997-01-28 | Oki Electric Ind Co Ltd | プラズマ処理装置 |
JPH10509557A (ja) * | 1995-09-19 | 1998-09-14 | サントル ナスィオナル デ ラ ルシェルシェ スィアンティフィーク | プラズマ中のイオン流の測定方法及び装置 |
KR100473794B1 (ko) | 2003-07-23 | 2005-03-14 | 한국표준과학연구원 | 플라즈마 전자밀도 측정 및 모니터링 장치 |
KR20080068012A (ko) * | 2005-09-30 | 2008-07-22 | 케이엘에이-텐코어 코오포레이션 | 플라즈마 프로세스의 전기적 파라미터들을 측정하는 방법및 장치 |
US20120255491A1 (en) * | 2011-04-07 | 2012-10-11 | Varian Semiconductor Equipment Associates, Inc. | System and method for plasma monitoring using microwaves |
KR101225010B1 (ko) | 2011-07-19 | 2013-01-22 | 한국표준과학연구원 | 초고주파 프로브 |
KR20170069652A (ko) | 2015-12-11 | 2017-06-21 | 충남대학교산학협력단 | 초고주파 플라즈마 진단 장치 |
KR101756325B1 (ko) | 2016-01-21 | 2017-07-10 | 한국표준과학연구원 | 평면형 플라즈마 진단 장치 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3363616B2 (ja) * | 1994-07-28 | 2003-01-08 | 積水化学工業株式会社 | 積層体の製造方法及びペン入力パネル用保護材料の製造方法 |
JP3208044B2 (ja) * | 1995-06-07 | 2001-09-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US6653852B1 (en) * | 2000-03-31 | 2003-11-25 | Lam Research Corporation | Wafer integrated plasma probe assembly array |
US6673636B2 (en) * | 2001-05-18 | 2004-01-06 | Applied Materails Inc. | Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers |
US20030117321A1 (en) | 2001-07-07 | 2003-06-26 | Furse Cynthia M. | Embedded antennas for measuring the electrical properties of materials |
JP3768162B2 (ja) | 2002-02-15 | 2006-04-19 | 株式会社日立製作所 | 半導体処理装置とウエハセンサモジュール |
FR2876536B1 (fr) | 2004-10-07 | 2007-01-26 | Ecole Polytechnique Etablissem | Dispositif et procede de caracterisation de plasma |
JP4701408B2 (ja) * | 2005-08-31 | 2011-06-15 | 国立大学法人名古屋大学 | プラズマ電子密度測定用の面状共振素子並びにプラズマ電子密度測定方法及び装置 |
KR101142308B1 (ko) * | 2009-09-10 | 2012-05-17 | 한국표준과학연구원 | 플라즈마 모니터링 장치, 플라즈마 모니터링 방법, 및 플라즈마 장치 |
JP5686549B2 (ja) | 2010-08-26 | 2015-03-18 | 学校法人中部大学 | プラズマ電子密度測定プローブ及び測定装置 |
KR101225011B1 (ko) * | 2011-07-28 | 2013-01-22 | 한국표준과학연구원 | 공진 구조체를 이용한 초고주파 프로브 |
JP6097097B2 (ja) | 2013-03-04 | 2017-03-15 | 学校法人中部大学 | プラズマ状態測定プローブ及びプラズマ状態測定装置 |
KR101456542B1 (ko) | 2013-05-07 | 2014-10-31 | 한국표준과학연구원 | 초고주파 플라즈마 진단 장치 |
EP3005843A2 (en) * | 2013-06-06 | 2016-04-13 | Anders Persson | Split-ring resonator plasma source |
JP6259972B2 (ja) | 2013-12-25 | 2018-01-17 | 大学共同利用機関法人自然科学研究機構 | マイクロ波受信用アンテナ及びマイクロ波受信用アンテナアレイ |
CN104091837B (zh) | 2014-06-13 | 2016-09-28 | 南京大学 | 一种基于光学天线的太赫兹探测器 |
JP2019009305A (ja) * | 2017-06-26 | 2019-01-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2019
- 2019-04-15 CN CN201980028803.9A patent/CN112042282B/zh active Active
- 2019-04-15 WO PCT/KR2019/004500 patent/WO2020159003A1/ko active Application Filing
- 2019-04-15 JP JP2021514264A patent/JP7085690B2/ja active Active
- 2019-04-15 US US17/050,373 patent/US11867643B2/en active Active
- 2019-04-15 EP EP19912976.8A patent/EP3780913A4/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0927476A (ja) * | 1995-07-12 | 1997-01-28 | Oki Electric Ind Co Ltd | プラズマ処理装置 |
JPH10509557A (ja) * | 1995-09-19 | 1998-09-14 | サントル ナスィオナル デ ラ ルシェルシェ スィアンティフィーク | プラズマ中のイオン流の測定方法及び装置 |
KR100473794B1 (ko) | 2003-07-23 | 2005-03-14 | 한국표준과학연구원 | 플라즈마 전자밀도 측정 및 모니터링 장치 |
KR20080068012A (ko) * | 2005-09-30 | 2008-07-22 | 케이엘에이-텐코어 코오포레이션 | 플라즈마 프로세스의 전기적 파라미터들을 측정하는 방법및 장치 |
US20120255491A1 (en) * | 2011-04-07 | 2012-10-11 | Varian Semiconductor Equipment Associates, Inc. | System and method for plasma monitoring using microwaves |
KR101225010B1 (ko) | 2011-07-19 | 2013-01-22 | 한국표준과학연구원 | 초고주파 프로브 |
KR20170069652A (ko) | 2015-12-11 | 2017-06-21 | 충남대학교산학협력단 | 초고주파 플라즈마 진단 장치 |
KR101756325B1 (ko) | 2016-01-21 | 2017-07-10 | 한국표준과학연구원 | 평면형 플라즈마 진단 장치 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3780913A4 |
Also Published As
Publication number | Publication date |
---|---|
CN112042282B (zh) | 2022-12-16 |
US20210116393A1 (en) | 2021-04-22 |
JP2021523549A (ja) | 2021-09-02 |
US11867643B2 (en) | 2024-01-09 |
CN112042282A (zh) | 2020-12-04 |
EP3780913A4 (en) | 2021-06-16 |
JP7085690B2 (ja) | 2022-06-16 |
EP3780913A1 (en) | 2021-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100695967B1 (ko) | 전기 디바이스의 부분방전검출방법 및 장치 | |
WO2013065893A1 (ko) | 슬롯형 증강안테나 | |
KR102193694B1 (ko) | 평면형 플라즈마 진단 장치가 매립된 정전척 | |
WO2019182246A1 (en) | Partial discharge detecting system | |
WO2013032069A1 (ko) | 레이더 디텍터용 안테나 | |
KR20210128979A (ko) | 평면형 플라즈마 진단 장치가 매립된 플라즈마 공정 장치 | |
WO2013109025A1 (ko) | 플라즈마 발생 장치 및 기판 처리 장치 | |
WO2011055885A1 (ko) | 멤스 마이크로폰 및 그 제조방법 | |
WO2020159003A1 (ko) | 평면형 플라즈마 진단 장치, 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치, 평면형 플라즈마 진단 장치가 매립된 정전척 | |
WO2022119010A1 (ko) | 플라즈마 공정의 모니터링 장치 및 방법, 및 이 모니터링 방법을 이용한 기판 처리 방법 | |
WO2021101069A1 (ko) | 기계 학습 모델을 이용한 반도체 소자 테스트 장치 및 방법 | |
KR20200112126A (ko) | 평면형 플라즈마 진단 장치가 매립된 웨이퍼형 플라즈마 진단 장치 | |
WO2021201529A1 (ko) | 메탈 플레이트 및 안테나 필터 유닛을 포함하는 안테나 유닛 | |
WO2021010776A1 (en) | Flexible cable | |
WO2019017594A1 (ko) | 내장형 안테나를 갖는 무선통신칩, 무선통신칩용 내장형 안테나, 및 내장형 안테나를 갖는 무선통신칩의 제조 방법 | |
CN107045095A (zh) | 一种光纤特高频复合传感器以及gis局部放电检测装置 | |
WO2015099509A1 (ko) | 알에프 코일 및 이를 포함하고 있는 알에프 코일 어셈블리 | |
WO2020045843A1 (ko) | Mems 캐패시티브 마이크로폰 | |
WO2021172703A1 (ko) | 위상 배열 안테나 모듈 및 이를 포함하는 모바일 디바이스 | |
WO2019009513A1 (ko) | 선형 가변 차동 변환기 | |
WO2022015075A1 (ko) | 검사용 커넥팅 장치 | |
WO2010098572A2 (ko) | 공공 무선망 통합장치 | |
WO2023277442A1 (ko) | 전기접속용 커넥터 | |
WO2023277437A1 (ko) | 전기접속용 커넥터 | |
WO2013062167A1 (ko) | 증강안테나 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 19912976 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 19912976 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2019912976 Country of ref document: EP Effective date: 20201029 |
|
ENP | Entry into the national phase |
Ref document number: 2021514264 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |